KR101773219B1 - Laser annealing method, device, and microlens array - Google Patents

Laser annealing method, device, and microlens array Download PDF

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KR101773219B1
KR101773219B1 KR1020127030599A KR20127030599A KR101773219B1 KR 101773219 B1 KR101773219 B1 KR 101773219B1 KR 1020127030599 A KR1020127030599 A KR 1020127030599A KR 20127030599 A KR20127030599 A KR 20127030599A KR 101773219 B1 KR101773219 B1 KR 101773219B1
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microlenses
laser
laser light
pitch
microlens
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미찌노부 미즈무라
요시오 와따나베
마꼬또 하따나까
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브이 테크놀로지 씨오. 엘티디
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors

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Abstract

The microlens array can be formed with a large pitch different from the pitch of the transistor formation scheduled region in the amorphous silicon film and the amorphous silicon film can be formed with a small pitch smaller than the arrangement pitch of the microlens arrays, A laser annealing method, an apparatus, and a microlens capable of forming a laser beam. The microlenses of the first group 11, the second group 12 and the third group 13 are arranged in three rows at the same pitch P in each group and the microlenses are arranged at P + 1 / 3P Only. In the first step, the first laser light is irradiated from the three rows of microlenses of the first group. In the second step, at the time when the substrate 20 is moved only by 3P, the microlenses 5 for 2 x 3 columns The second laser light is irradiated, and similarly, a laser annealed region is formed at the P / 3 pitch.

Figure 112012096376963-pct00002

Description

LASER ANNEALING METHOD, DEVICE, AND MICROLENS ARRAY < RTI ID = 0.0 >

The present invention relates to a laser annealing method and apparatus for annealing an amorphous silicon film by irradiation with a laser beam to form a low-temperature polysilicon film in a thin film transistor liquid crystal panel or the like, and a microlens array used therefor. More particularly, And a laser annealing method and apparatus capable of annealing only a region where a thin film transistor is to be formed.

In the liquid crystal panel, an amorphous silicon film is formed on a glass substrate, and the amorphous silicon film is scanned with laser light having a linear beam shape from one end of the substrate in a direction perpendicular to the longitudinal direction of the beam , A low-temperature polysilicon film is formed. The amorphous silicon film is heated by the laser light and once melted by the scanning of the linear laser light, the molten silicon is rapidly cooled by the passage of the laser light, and solidified to be crystallized to form a low temperature polysilicon film (Patent Document 1) .

However, in the method of forming the low-temperature polysilicon film, the entire amorphous silicon film is irradiated with the laser light to become high temperature, and the whole is a low-temperature polysilicon film by melt-solidification of the amorphous silicon film. As a result, regions other than the regions where the thin film transistors (hereinafter, referred to as TFTs) are to be formed are also annealed, resulting in a problem of poor processing efficiency.

Therefore, by using a microlens array, laser light is condensed on a plurality of minute regions on the amorphous silicon film by the respective microlenses, and laser light is irradiated individually and simultaneously to the minute regions corresponding to the respective transistors, (Patent Document 2). In this method, since only the amorphous silicon film of the plurality of TFT formation scheduled regions is annealed, there is an advantage that the utilization efficiency of the laser light is increased.

Japanese Patent No. 3945805 Japanese Patent Application Laid-Open No. 2004-311906

However, in the conventional laser annealing method using a microlens array, since the arrangement pitch of the microlens arrays is fixed, a TFT formation region is provided at a pitch matched with the pitch, or a pitch It is necessary to assemble the microlens array, which is problematic in that the versatility is low.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the present invention to provide an amorphous silicon film which can form a microlens array with a large pitch different from the pitch of the transistor formation region in the amorphous silicon film, An object of the present invention is to provide a laser annealing method, apparatus, and microlens array capable of forming a minute polysilicon film region by laser annealing on a film.

A laser annealing method according to the present invention is a laser annealing method comprising: a microlens array in which m columns (m is a natural number) rows and a plurality of microlenses are arranged; a mask having an opening corresponding to each microlens; And a drive means for moving the irradiation system of the laser beam including the mask and the microlens and the substrate in a direction perpendicular to the row of the microlenses, Using an irradiation device,

The microlenses of the m columns are grouped into n (n is a natural number, n < m) columns, and the microlenses are arranged at the same pitch P among the groups. n in the first step, laser annealing is performed by irradiating the amorphous silicon film on the substrate with the first laser light from n microlenses, and in the second step, the irradiation system of the laser light and the substrate The laser annealing is performed by irradiating the amorphous silicon film on the substrate with the second laser light from the microlenses of 2 x n columns at the time of relatively moving by n x P, , And a laser annealing region is formed at a P / n pitch.

Further, the laser annealing apparatus according to the present invention is a laser annealing apparatus comprising: a microlens array in which a plurality of microlenses in each column are arranged in a matrix of m (m is a natural number); a mask having an opening corresponding to each microlens; Driving means for moving the irradiation system of the laser beam including the mask and the microlens and the substrate relatively in the direction perpendicular to the row of the microlenses; And a control device for controlling the operation of the drive means and the operation of the source,

The microlenses of the m columns are grouped into n (n is a natural number, n < m) columns, and the microlenses are arranged at the same pitch P among the groups. n,

Wherein the control device irradiates the amorphous silicon film on the substrate with the laser light for the first time from the microlens for n lines to perform the laser annealing in the first step and the irradiation system of the laser light and the substrate are relatively , Laser annealing is performed by irradiating the amorphous silicon film on the substrate with a second laser light from a microlens of 2 x n columns to perform laser annealing a plurality of times in the same manner, And controlling the drive means and the source so as to form a laser annealed region with a P / n pitch.

Further, the microlens array according to the present invention is used in an apparatus for irradiating a laser beam, wherein a plurality of microlenses in each column are arranged in m (m is a natural number) column, wherein the microlenses in the m row are n n is a natural number, n < m), and the microlenses are arranged at the same pitch P in each group, and the microlenses are spaced apart from each other by P + P / n .

According to the present invention, since the gap of P + P / n is empty between the microlens of the last row of the group and the microlens of the first row, the irradiation system of the laser beam and the substrate are relatively moved, (N-1) rows of laser light irradiation areas can be provided between the pitches P of the microlens arrays when laser light is irradiated. That is, the irradiation region of n rows can be provided while the arrangement pitch of each group of the microlenses is P, and the arrangement pitch of the irradiation regions can be made finer. Thereby, the microlens array can be formed with a large pitch different from the pitch of the transistor formation scheduled region in the amorphous silicon film, and the amorphous silicon film can be formed with a fine poly A silicon film region can be formed.

1 is a view showing a laser irradiation apparatus.
2 is a schematic diagram showing the transition of the laser irradiation area.
3 shows the planar arrangement of the area 10 (the area subjected to the annealing) where the laser beam is condensed on the amorphous silicon film by the microlens and the microlens 5, and the lower drawing shows a planar arrangement of the microlens 5 on the glass substrate 1 is a front view showing the laser light to be irradiated.
Fig. 4 is a view showing the next step of Fig. 3; Fig.
5 is a view showing the next step of Fig.
Fig. 6 is a view showing the next step of Fig. 5. Fig.
7 is a view showing the next step of Fig.
8 is a view showing the next step of Fig.
Fig. 9 is a view showing the next step of Fig. 8; Fig.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 is a view showing a laser irradiation apparatus using a microlens 5. Fig. The laser irradiating apparatus shown in Fig. 1, in the manufacturing process of a semiconductor device such as a thin film transistor having a reverse stagger structure, for example, irradiates laser beam only to a region where the channel region is to be formed and anneals, To polycrystallize a region, and to form a polysilicon film. A laser annealing apparatus using this microlens 5 is a laser annealing apparatus in which laser light emitted from a light source 1 is shaped into a parallel beam by a lens group 2 and a microlens array composed of a plurality of microlenses 5 To irradiate the object 6. [ The laser light source 1 is, for example, an excimer laser that emits laser light having a wavelength of 308 nm or 353 nm at, for example, a repetition rate of 50 Hz. The microlens array is one in which a plurality of microlenses 5 are arranged on a transparent substrate 4 and focuses the laser light on a thin film transistor formation predetermined region set on a thin film transistor substrate as a specimen 6. [ The transparent substrate 4 is arranged parallel to the object 6 and the microlenses 5 are arranged at a pitch of two or more integral multiples (for example, 2) of the arrangement pitch of the transistors to be formed. The irradiated object 6 of the present embodiment is, for example, a thin film transistor, and irradiates a laser light to a channel region to be formed in the a-Si film to form a polysilicon channel region. A mask 3 for irradiating a laser beam to only the channel formation scheduled region is disposed above the microlenses 5 by means of the microlenses 5. The mask 3 is used to irradiate the irradiated object 6 The channel region is defined.

For example, when a driving transistor of a pixel is formed as a peripheral circuit of a liquid crystal display device, a gate electrode made of a metal film such as Al is patterned on a glass substrate by sputtering. Then, using a silane and H 2 gas as a source gas, a low-temperature plasma CVD method at 250 ° C to 300 ° C forms a gate insulating film whose entire surface is a SiN film. Thereafter, an a-Si: H film is formed on the gate insulating film by, for example, plasma CVD. This a-Si: H film is formed by using a gas obtained by mixing silane and H 2 gas as a raw material gas. A region on the gate electrode of the a-Si: H film is to be formed as a channel forming region. One microlens 5 is disposed in each channel region, and only the region to be formed with a channel is irradiated with laser light to anneal, The polycrystalline silicon channel region is formed by polycrystallizing the intended formation region. The microlenses 5 are arranged in a plurality of rows instead of one row. In the embodiment shown in Figs. 2 to 9, three rows are arranged in three rows, and a total of nine rows of microlenses are arranged.

2 is a plan view showing the arrangement of the microlenses 5 and the irradiation region of the laser light. 3 to 9 show the planar arrangement of the area 10 (the area subjected to the annealing) and the microlenses 5 on which the laser light is condensed on the amorphous silicon film by the microlenses, The figure is a front view showing a laser beam irradiated onto a glass substrate. A mask 3 made of, for example, aluminum is disposed above the microlens 5, and a light shielding plate 7 for shielding the laser light is disposed above the mask 3. As shown in Fig. 2, the microlenses 5 are arranged in nine rows in total of three columns of each group of the first group 11, the second group 12 and the third group 13. Among the respective groups of the first lens group 11, the second lens group 12 and the third lens group 13, the microlenses 5 are arranged at a constant pitch P. [ The mutual relation of the microlenses between the first group 11 and the second group 12 and between the microlenses between the second group 12 and the third group 13 are all P + Spaced apart.

A gate layer 21 is formed on the entire surface of the glass substrate 20 and an amorphous silicon layer 22 is formed on the gate layer 21. 3, the mask 3, the microlenses 5, and the light shielding plate 7 are disposed in front of the upper region of the glass substrate 20. In the initial stage shown in Fig.

Then, the glass substrate 20 is moved to the right in the figure with the shield plate 7, the mask 3, and the microlenses 5 fixed. The movement pattern of the substrate is moved by a distance of three times the arrangement pitch P of the microlenses, then irradiated with the laser light, and after the substrate moves by a distance of three times the pitch P, the laser light is irradiated .

Next, the operation when the laser annealing method of the present embodiment is performed by the laser irradiation apparatus configured as described above will be described. Further, the following operation is performed by controlling the driving means for moving the irradiation system of the laser light including the mask and the microlens and the substrate relatively in the direction perpendicular to the row of the microlenses, and a control device for controlling the operation of the source of the laser light do. 3, the opening portion of the mask 3 corresponds to each microlens 5 on the transparent substrate 4, and the positional relationship with the microlens 5 is maintained constant. The light shielding plate 7 covers the upper portion of the other microlenses 5 except for the area above the microlenses 5 for three columns on the front end side (on the side of the substrate 20), and shields the laser light .

Then, as shown in Fig. 4, the glass substrate 20 is moved to the right in the figure. Then, at the time when the position of the glass substrate 20 is shifted by a distance corresponding to three times the pitch P, the width of the microlens 5 and the mask 3 are equal to three columns of the microlens 5. At this point, the laser beam 30 is irradiated for one shot. Then, in the amorphous silicon film 22, the region 10 condensed by the microlenses 5 for three columns of the pitch P is heated by the laser light to be heated, melted and solidified, Crystallize. As a result, the regions 10 for three columns become a polysilicon film. The microlenses 5 other than the microlenses 5 for three columns are shielded by the shielding plate 7 and the laser light is not irradiated.

Next, as shown in Fig. 5, at the time point when the glass substrate 20 moves again and the distance P is shifted by three times the pitch P, that is, after the start of the movement, by the distance of 6P, One shot. Then laser annealing is performed in the region 10 converged by the microlenses 5 of the first group 11 and the microlenses 5 of the second group 12. Thus, in addition to the region 10 of the first group 11 irradiated with the laser beam in the process of Fig. 4, in the process of Fig. 5, by the microlenses 5 of the first group and the second group, Laser annealing is performed on the light-irradiated region 10. 5 and FIG. 2, when the process of FIG. 5 is completed, the distance between the first group and the second group is about P + 1 / 3P, The laser annealing region 10 formed by the first group of micro lenses 5 of the first shot and the second group of the second shot of the second shot The laser annealing region 10 formed by the microlenses 5 of the first lens group 5 is shifted by 1 / 3P. That is, in the region 10 arranged with the pitch P, only the region 3 adjacent to the region 10 formed by the first shot is formed by 1 / 3P.

Then, as shown in Fig. 6, at the time when the glass substrate 20 has moved by 9P after starting movement, a shot of the third laser light is performed. Then, laser light is condensed and irradiated onto the amorphous silicon film 22 through all the microlenses of the microlenses of the first group 11, the second group 12 and the third group 13. As a result, in the portion of the width of about 3P of the tip end portion of the glass substrate 20, a short shot of the first group of laser light, a shot of the second group of laser light, The laser light in the third group is irradiated while shifting by a distance of 1 / 3P to form the laser anneal region 10 in nine rows in total, that is, 3 rows x 3 at the 1 / 3P pitch. In the portion of 3P from the position of about 3P apart to the position of about 6P apart from the tip of the glass substrate 20, a short shot by the second group of micro lenses and a shot by the second group A laser anneal region 10 of six rows in total is formed as a result of the shot.

Next, as shown in Fig. 7, at the time when the glass substrate 20 further moves by the distance of 3P, one short laser beam is also irradiated. Then, the glass substrate 20 advances forward by a width of about 3P from the lower portion of the microlens 5 and the mask 3, and the portion of the amorphous silicon film 22 excluding the portion of about 3P Portion is irradiated with laser light. The laser light is condensed on the amorphous silicon film 22 from all the microlenses 5 of the first group 11, the second group 12 and the third group 13, (10). As a result, with respect to the portion of the width of about 6P from the front end of the glass substrate 20, the laser annealing region 10 of 18 lines is formed at a 1/3 P pitch, and for the portion rearward by about 3P, The regions 10 of six rows are arranged at a pitch of 2 / 3P and the regions 10 of three rows are arranged at a pitch of P at a rear portion of about 3P.

Thereafter, likewise, at the time when the glass substrate 10 is moved by 3P, the laser light is shot by one shot, and all micro lenses 5 from the first group 11 to the third group 13 are used , Laser annealing is repeated. As a result, as shown in Figs. 8 and 9, the region where the laser annealing region 10 is arranged at 1 / 3P is enlarged.

Finally, at the rear end of the glass substrate, the irradiation of the laser light is stopped by shielding the laser light by the light blocking plate by three rows of the microlenses 5 and the portions on the tip side of the mask 3. In the figure, after the irradiation of the laser light from the three leftmost microlenses 5 is stopped, the irradiation of the laser light from the next three rows of microlenses 5 is stopped, When the last shot of the laser beam is performed, laser annealing is completed in all areas of the amorphous film.

As described above, the polysilicon region 10 having the arrangement pitch of 1 / 3P is formed on the glass substrate 20 regardless of the arrangement pitch of the microlenses 5. As a result, a fine region of polysilicon can be formed at a finer pitch than the arrangement pitch of the microlenses 5. In addition, the number of rows of microlenses having the same pitch belonging to each group is appropriately set, and the interval between the respective groups is set to (P + P / n), whereby the laser annealing region 10, (P / n), regardless of the pitch of the microlens 5, can be set.

According to the present invention, a minute laser anneal region can be formed at a finer pitch than the arrangement pitch of the microlens array, so that the semiconductor device can be made very small and the microlens array can be easily manufactured.

1: Laser light source
2: Lens group
3: Mask
4: transparent substrate
5: Microlens
6:
7: Shading plate
11: First group (micro lens)
12: Second group (micro lens)
13: Third group (micro lens)
20: glass substrate
21: gate layer
22: amorphous silicon film

Claims (3)

a mask having an opening corresponding to each microlens; a source of laser light; and a laser beam from the source, wherein the mask and the micro- And a driving means for relatively moving the irradiation system of the laser light including the mask and the microlens and the substrate in a direction perpendicular to the row of the microlenses,
The microlenses of the m columns are grouped into n (n is a natural number of 2 or more, n < m) columns, and the microlenses are arranged at the same pitch P among the groups, P / n. In the first step, laser annealing is performed by irradiating the amorphous silicon film on the substrate with the first laser light from n microlenses of the n lines, and in the second step, The laser annealing is performed by irradiating the amorphous silicon film on the substrate with the second laser light from the microlenses of 2 x n columns at the time when the substrate moves only by n x P, And a laser annealing region is formed at a P / n pitch. a mask having an opening corresponding to each microlens; a source of laser light; and a laser beam from the source, wherein the mask and the micro- Driving means for moving the irradiation system of the laser light including the mask and the microlens and the substrate relatively in the direction perpendicular to the row of the microlenses; and a controller for controlling the operation of the driving means and the operation of the source And a control unit
The microlenses of the m columns are grouped into n (n is a natural number of 2 or more, n < m) columns, and the microlenses are arranged at the same pitch P among the groups, P / n. In the first step, laser annealing is performed by irradiating the amorphous silicon film on the substrate with the first laser light from n microlenses, and in the second step, The laser annealing is performed by irradiating the amorphous silicon film on the substrate with the second laser light from the microlenses of 2 x n columns at the time when the irradiation system of the laser light and the substrate have moved only n x P, Wherein the driving means and the source are controlled so as to irradiate a plurality of laser beams to form a laser annealed region at a P / n pitch. 1. A microlens array used in an apparatus for irradiating a laser beam and having a plurality of microlenses arranged in a matrix of m (m is a natural number)
The microlenses of the m columns are grouped into n (n is a natural number of 2 or more, n < m) columns, and the microlenses are arranged at the same pitch P among the groups, P / n. &Lt; / RTI &gt;
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