TWI512818B - Cleaning apparatus for silicon wafer - Google Patents
Cleaning apparatus for silicon wafer Download PDFInfo
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- TWI512818B TWI512818B TW102121393A TW102121393A TWI512818B TW I512818 B TWI512818 B TW I512818B TW 102121393 A TW102121393 A TW 102121393A TW 102121393 A TW102121393 A TW 102121393A TW I512818 B TWI512818 B TW I512818B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/041—Cleaning travelling work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
Description
本發明是有關於一種清洗機構，且特別是有關於一種矽晶片之清洗機構。This invention relates to a cleaning mechanism and, more particularly, to a cleaning mechanism for a tantalum wafer.
請參照第1圖，其係繪示一種傳統矽晶片清洗機構之裝置示意圖。此傳統矽晶片清洗機構100主要包含第一酸槽102、第一清洗槽104、鹼槽106、第二清洗槽108、第二酸槽110、第三清洗槽112以及清洗液供應源114。從製程之上游至下游，第一酸槽102、第一清洗槽104、鹼槽106、第二清洗槽108、第二酸槽110以及第三清洗槽112依序設置。Please refer to FIG. 1 , which is a schematic diagram of a conventional tantalum wafer cleaning mechanism. The conventional enamel wafer cleaning mechanism 100 mainly includes a first acid tank 102, a first cleaning tank 104, an alkali tank 106, a second cleaning tank 108, a second acid tank 110, a third cleaning tank 112, and a cleaning liquid supply source 114. From the upstream to the downstream of the process, the first acid tank 102, the first cleaning tank 104, the alkali tank 106, the second cleaning tank 108, the second acid tank 110, and the third cleaning tank 112 are sequentially disposed.
矽晶片先在第一酸槽102中進行蝕刻處理。經酸液蝕刻後，將矽晶片載出第一酸槽102，並送入第一清洗槽104。在第一清洗槽104中，設置有兩個上下水刀組以及一風刀。矽晶片在第一清洗槽104中先經第一組上下水刀沖洗後，再由第二組上下水刀沖洗一次，隨後以風刀將矽晶片上的清洗液吹乾。第一清洗槽104所使用之清洗液為清洗經第二酸槽110處理後之矽晶片的第三清洗槽112中的溢流清洗液，其中這些溢流清洗液經由管路118而流到第一清洗槽104中。此外，兩個上下水刀組所使用之清洗液 會在第一清洗槽104中循環回收再利用。第一清洗槽104中過多而溢流的清洗液則經由管路116而排出。The germanium wafer is first etched in the first acid bath 102. After the acid solution is etched, the ruthenium wafer is carried out of the first acid tank 102 and sent to the first cleaning tank 104. In the first cleaning tank 104, two upper and lower water jet sets and one air knife are provided. The ruthenium wafer is first rinsed in the first cleaning tank 104 by the first set of upper and lower water jets, and then rinsed by the second set of upper and lower water jets, and then the cleaning liquid on the enamel wafer is blown dry by a wind knife. The cleaning liquid used in the first cleaning tank 104 is an overflow cleaning liquid in the third cleaning tank 112 of the silicon wafer processed by the second acid tank 110, wherein the overflow cleaning liquid flows through the pipeline 118 to the first In a cleaning tank 104. In addition, the cleaning fluid used in the two upper and lower waterjet groups It will be recycled and reused in the first cleaning tank 104. The excess and overflowing cleaning liquid in the first cleaning tank 104 is discharged through the line 116.
將矽晶片載出第一清洗槽104後，送入鹼槽106中，來進行所需之濕式處理。由於，雖然已經利用清洗液沖洗矽晶片上的酸液，但經過一段處理時間後，第一清洗槽104中的循環清洗液也會偏酸性。因此，矽晶片經第一清洗槽104清洗並經風刀吹拂後，其表面上仍殘留有一些偏酸性的清洗液。這些殘留的酸性清洗液會與鹼槽106中之鹼性處理液產生酸鹼中和反應，而形成結晶。此外，這樣的情況也會導致鹼槽106中之鹼性處理液的濃度不足。After the ruthenium wafer is carried out of the first cleaning tank 104, it is sent to the alkali tank 106 to perform the desired wet treatment. Since the acid liquid on the silicon wafer has been washed with the cleaning liquid, the circulating cleaning liquid in the first cleaning tank 104 is also acidic after a certain processing time. Therefore, after the silicon wafer is cleaned by the first cleaning tank 104 and blown by the air knife, some acidic cleaning liquid remains on the surface. These residual acidic cleaning liquids neutralize the acid-base neutralization with the alkaline treatment liquid in the alkali tank 106 to form crystals. Further, such a situation may also result in an insufficient concentration of the alkaline treatment liquid in the alkali tank 106.
由於，第一清洗槽104中的清洗液用來沖洗矽晶片一段時間後，清洗液的酸性會逐漸增加。而持續循環使用這些清洗液的情況下，不僅將在鹼槽106中產生大量的鹽類結晶，也會在矽晶片的運送裝置上形成結晶。如此一來，將造成鹼槽104之上下游清洗槽內的風刀、以及過濾器與液體管路阻塞，進而導致清洗設備需停機來進行風刀、過濾器與管路的清理。此外，也會因運送裝置上有酸鹼中和的結晶，而導致矽晶片破裂。而且，風刀遭結晶阻塞後，會導致矽晶片之風乾程度不佳，不僅會進一步降低鹼槽106中之鹼性處理液的濃度，也會產生矽晶片的棕斑重工問題，更會導致排出之廢棄鹼液過酸，造成廠務無法回收處理。Since the cleaning liquid in the first cleaning tank 104 is used to rinse the silicon wafer for a while, the acidity of the cleaning liquid gradually increases. When these cleaning liquids are continuously recycled, not only a large amount of salt crystals are generated in the alkali tank 106, but also crystals are formed on the crucible wafer transport apparatus. As a result, the air knife in the cleaning tank above and below the alkali tank 104, and the filter and the liquid pipeline are blocked, thereby causing the cleaning equipment to be shut down to clean the air knife, the filter and the pipeline. In addition, the ruthenium wafer is broken due to acid-base neutralized crystallization on the transport device. Moreover, after the air knife is blocked by the crystal, the air drying of the silicon wafer is not good, which not only further reduces the concentration of the alkaline treatment liquid in the alkali tank 106, but also causes the brown spot rework problem of the tantalum wafer, and even causes the discharge. The waste lye is too acidic, causing the factory to be unable to recycle.
因此，本發明之一態樣就是在提供一種矽晶片清洗 機構，其第一酸槽與下游之鹼槽之間的清洗站設有二清洗槽，第二清洗槽之清洗液直接由清洗液供應源供給，並循環予第一沖洗裝置使用，而第一清洗槽經沖洗過之清洗液則排掉。如此一來，可大大地降低矽晶片經清洗後的表面殘酸，而可有效減少鹼槽與矽晶片運送裝置因酸鹼中和而產生的結晶，進而可避免風乾裝置、管路與過濾器阻塞，矽晶片因運送裝置上的結晶而破裂，矽晶片棕斑重工問題，設備停機清理風乾裝置，以及廠務回收鹼槽清洗液過酸而無法回收的問題。Therefore, one aspect of the present invention is to provide a silicon wafer cleaning The mechanism, the cleaning station between the first acid tank and the downstream alkali tank is provided with two washing tanks, and the cleaning liquid of the second washing tank is directly supplied by the cleaning liquid supply source, and is circulated to the first flushing device for use, and the first The rinse solution that has been rinsed in the cleaning tank is drained. In this way, the residual acid on the surface of the tantalum wafer after cleaning can be greatly reduced, and the crystallization of the alkali tank and the tantalum wafer transport device due to acid-base neutralization can be effectively reduced, thereby avoiding the air drying device, the pipeline and the filter. Blocking, 矽 wafer rupture due to crystallization on the transport device, 棕 wafer brown spot heavy work problem, equipment shutdown cleaning air drying device, and the factory recovery alkali tank cleaning solution is too acid to recover.
本發明之另一態樣是在提供一種矽晶片清洗機構，其第一酸槽與下游之鹼槽之間的清洗站的第一清洗槽設有風乾裝置，以將噴向下游之第二清洗槽的清洗液吹回第一清洗槽。因此，可降低對第二清洗槽之清洗液之酸鹼性的影響，而可進一步降低矽晶片經清洗後之表面殘留液體的酸度。Another aspect of the present invention provides a silicon wafer cleaning mechanism, wherein a first cleaning tank of a cleaning station between a first acid tank and a downstream alkali tank is provided with an air drying device to spray a second cleaning downstream. The cleaning liquid of the tank is blown back to the first cleaning tank. Therefore, the influence of the acidity and alkalinity of the cleaning liquid of the second cleaning tank can be reduced, and the acidity of the residual liquid on the surface of the tantalum wafer after washing can be further reduced.
本發明之又一態樣是在提供一種矽晶片清洗機構，其第一酸槽與鹼槽之間之清洗站的第二個清洗槽的清洗液係由清洗液供應源直接供給，因此可使用更潔淨之清洗液來進行此清洗站的矽晶片清洗。Another aspect of the present invention provides a silicon wafer cleaning mechanism, wherein a cleaning liquid of a second cleaning tank of a cleaning station between a first acid tank and an alkali tank is directly supplied from a cleaning liquid supply source, and thus can be used. A cleaner cleaning solution is used to clean the wafer of this cleaning station.
根據本發明之上述目的，提出一種矽晶片清洗機構。此矽晶片清洗機構包含一第一酸槽、一鹼槽、一第一清洗槽、一第一沖洗裝置、一排水閥、一第二清洗槽、一第二沖洗裝置以及一泵裝置。第一清洗槽位於第一酸槽與鹼槽之間。第一沖洗裝置設於第一清洗槽中，其中第一清 洗槽適用以承接利用第一沖洗裝置進行清洗後之一第一清洗液。排水閥與第一清洗槽連通，其中第一清洗液經排水閥排出。第二清洗槽位於第一清洗槽與鹼槽之間。第二沖洗裝置設於第二清洗槽中，其中第二清洗槽適用以承接利用第二沖洗裝置進行清洗後之一第二清洗液。泵裝置適用以將第二清洗液循環到第一沖洗裝置。In accordance with the above objects of the present invention, a tantalum wafer cleaning mechanism is proposed. The wafer cleaning mechanism comprises a first acid tank, an alkali tank, a first washing tank, a first flushing device, a drain valve, a second washing tank, a second flushing device and a pump device. The first cleaning tank is located between the first acid tank and the alkali tank. The first flushing device is disposed in the first cleaning tank, wherein the first clearing The washing tank is adapted to receive one of the first cleaning liquids after being cleaned by the first flushing device. The drain valve is in communication with the first cleaning tank, wherein the first cleaning fluid is discharged through the drain valve. The second cleaning tank is located between the first cleaning tank and the alkali tank. The second rinsing device is disposed in the second cleaning tank, wherein the second cleaning tank is adapted to receive one of the second cleaning liquids after being cleaned by the second rinsing device. The pump device is adapted to circulate the second cleaning fluid to the first flushing device.
依據本發明之一實施例，上述之矽晶片清洗機構更包含一第一風乾裝置設於第一清洗槽中，且適用以吹除經第一沖洗裝置沖洗後之一矽晶片上之第一清洗液以及將噴向第二清洗槽之第一清洗液吹回第一清洗槽。According to an embodiment of the present invention, the 矽 wafer cleaning mechanism further includes a first air drying device disposed in the first cleaning tank, and is adapted to blow off the first cleaning on one of the 矽 wafers after being rinsed by the first rinsing device. The liquid and the first cleaning liquid sprayed to the second cleaning tank are blown back to the first cleaning tank.
依據本發明之另一實施例，上述之矽晶片清洗機構更包含一第二風乾裝置設於第二清洗槽中，且適用以吹除經第二沖洗裝置沖洗後之一矽晶片上之第二清洗液。According to another embodiment of the present invention, the silicon wafer cleaning mechanism further includes a second air drying device disposed in the second cleaning tank, and is adapted to blow off the second wafer on the wafer after being rinsed by the second processing device. Cleaning fluid.
依據本發明之又一實施例，上述之矽晶片清洗機構更包含一第三清洗槽位於鹼槽之下游，其中鹼槽位於第一酸槽之下游。According to still another embodiment of the present invention, the silicon wafer cleaning mechanism further includes a third cleaning tank located downstream of the alkali tank, wherein the alkali tank is located downstream of the first acid tank.
依據本發明之再一實施例，上述之矽晶片清洗機構更包含一清洗液供應源，以分別供應上述之第二清洗液和一第三清洗液予第二沖洗裝置與第三清洗槽。According to still another embodiment of the present invention, the 矽 wafer cleaning mechanism further includes a cleaning liquid supply source for respectively supplying the second cleaning liquid and the third cleaning liquid to the second rinsing device and the third cleaning tank.
依據本發明之再一實施例，上述之矽晶片清洗機構更包含一管路與第三清洗槽連通，適用以排放第三清洗槽溢流出之第三清洗液。According to still another embodiment of the present invention, the silicon wafer cleaning mechanism further includes a pipeline communicating with the third cleaning tank, and is adapted to discharge the third cleaning liquid overflowing from the third cleaning tank.
依據本發明之再一實施例，上述之矽晶片清洗機構更包含一第四清洗槽位於鹼槽與第三清洗槽之間、以及一 第二酸槽位於第四清洗槽與第三清洗槽之間。According to still another embodiment of the present invention, the silicon wafer cleaning mechanism further includes a fourth cleaning tank located between the alkali tank and the third cleaning tank, and a The second acid tank is located between the fourth cleaning tank and the third cleaning tank.
100‧‧‧矽晶片清洗機構100‧‧‧矽 wafer cleaning mechanism
102‧‧‧第一酸槽102‧‧‧First acid tank
104‧‧‧第一清洗槽104‧‧‧First cleaning tank
106‧‧‧鹼槽106‧‧‧ alkali tank
108‧‧‧第二清洗槽108‧‧‧Second cleaning tank
110‧‧‧第二酸槽110‧‧‧Second acid tank
112‧‧‧第三清洗槽112‧‧‧The third cleaning tank
114‧‧‧清洗液供應源114‧‧‧cleaning fluid supply
116‧‧‧管路116‧‧‧pipe
118‧‧‧管路118‧‧‧ pipeline
200‧‧‧矽晶片清洗機構200‧‧‧矽 wafer cleaning mechanism
202‧‧‧第一酸槽202‧‧‧First acid tank
204‧‧‧清洗站204‧‧‧Washing station
206‧‧‧鹼槽206‧‧‧ alkali tank
208‧‧‧第四清洗槽208‧‧‧fourth cleaning tank
210‧‧‧第二酸槽210‧‧‧Second acid tank
212‧‧‧第三清洗槽212‧‧‧The third cleaning tank
214‧‧‧清洗液供應源214‧‧‧cleaning fluid supply
216‧‧‧管路216‧‧‧pipe
218‧‧‧管路218‧‧‧ pipeline
220‧‧‧管路220‧‧‧pipe
222‧‧‧管路222‧‧‧ pipeline
224‧‧‧管路224‧‧‧pipe
226‧‧‧管路226‧‧‧pipe
228‧‧‧管路228‧‧‧pipe
230‧‧‧排水閥230‧‧‧Drain valve
232‧‧‧排水閥232‧‧‧Drain valve
234‧‧‧閥234‧‧‧ valve
236‧‧‧排水閥236‧‧‧Drain valve
238‧‧‧排水閥238‧‧‧Drain valve
240‧‧‧排水閥240‧‧‧Drain valve
242‧‧‧排水閥242‧‧‧Drain valve
244‧‧‧排水閥244‧‧‧Drain valve
246‧‧‧第一沖洗裝置246‧‧‧First flushing device
248‧‧‧水刀248‧‧‧Waterjet
250‧‧‧水刀250‧‧‧Waterjet
252‧‧‧矽晶片252‧‧‧矽 wafer
254‧‧‧第一風乾裝置254‧‧‧First air dryer
256‧‧‧第一清洗槽256‧‧‧First cleaning tank
258‧‧‧第二清洗槽258‧‧‧Second cleaning tank
260‧‧‧第二沖洗裝置260‧‧‧second flushing device
262‧‧‧水刀262‧‧‧Waterjet
264‧‧‧水刀264‧‧‧Waterjet
266‧‧‧第二風乾裝置266‧‧‧Second air drying device
268‧‧‧第一清洗液268‧‧‧First cleaning solution
270‧‧‧第二清洗液270‧‧‧Second cleaning solution
272‧‧‧泵裝置272‧‧‧ pump device
274‧‧‧管路274‧‧‧pipe
276‧‧‧管路276‧‧‧pipe
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂，所附圖式之說明如下：The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood.
第1圖係繪示一種傳統矽晶片清洗機構之裝置示意圖。Figure 1 is a schematic view of a conventional tantalum wafer cleaning mechanism.
第2圖係繪示依照本發明之一實施方式的一種矽晶片清洗機構之裝置示意圖。2 is a schematic view of a device for cleaning a wafer wafer in accordance with an embodiment of the present invention.
第3圖係繪示依照本發明之一實施方式的一種清洗站之二清洗槽之裝置示意圖。3 is a schematic view of a cleaning tank of a cleaning station according to an embodiment of the present invention.
請一併參照第2圖與第3圖，其係分別繪示依照本發明之一實施方式的一種矽晶片清洗機構之裝置示意圖、以及矽晶片清洗機構之一清洗站之二清洗槽的裝置示意圖。在本實施方式中，矽晶片清洗機構200主要包含第一酸槽202、鹼槽206、清洗站204、排水閥232與泵裝置272。在一實施例中，第一酸槽202可盛裝有氫氟酸(HF)等酸液，以對矽晶片252進行例如蝕刻等濕式處理。在一些例子中，矽晶片清洗機構200可根據製程需求而進一步設有管路216與排水閥230，其中管路216與第一酸槽202連通，排水閥230則設於管路216上。可透過控制排水閥230的開與關，來管理第一酸槽202之酸液的排放。從第一酸槽202所排放的酸液一般為高濃度的酸性廢水。Referring to FIG. 2 and FIG. 3 together, FIG. 2 is a schematic diagram of a device for cleaning a silicon wafer cleaning mechanism according to an embodiment of the present invention, and a schematic diagram of a cleaning device for a cleaning station of a cleaning device of a silicon wafer cleaning mechanism. . In the present embodiment, the 矽 wafer cleaning mechanism 200 mainly includes a first acid tank 202, an alkali tank 206, a washing station 204, a drain valve 232, and a pump device 272. In one embodiment, the first acid tank 202 may contain an acid solution such as hydrofluoric acid (HF) to perform wet processing such as etching on the tantalum wafer 252. In some examples, the silicon wafer cleaning mechanism 200 can further be provided with a line 216 and a drain valve 230 according to process requirements, wherein the line 216 is in communication with the first acid tank 202 and the drain valve 230 is disposed on the line 216. The acid discharge of the first acid tank 202 can be managed by controlling the opening and closing of the drain valve 230. The acid liquid discharged from the first acid tank 202 is generally a high concentration of acidic wastewater.
在此實施方式中，鹼槽206位於第一酸槽202之下 游，而清洗站204則位於第一酸槽202與鹼槽206之間。清洗站204主要係用來清洗從第一酸槽202出來之矽晶片252，以將矽晶片252上殘留之酸液沖掉。在一些實施例中，如第3圖所示，清洗站204可包含第一清洗槽256與第二清洗槽258。其中，第二清洗槽258位於第一清洗槽256之下游，因此第一清洗槽256位於第一酸槽202與鹼槽206之間，且第二清洗槽258位於第一清洗槽256與鹼槽206之間。在一示範例子中，第一清洗槽256可位於第二清洗槽258中，如第3圖所示。In this embodiment, the alkali tank 206 is located below the first acid tank 202. The cleaning station 204 is located between the first acid tank 202 and the alkali tank 206. The cleaning station 204 is mainly used to clean the germanium wafer 252 from the first acid bath 202 to wash away the acid remaining on the germanium wafer 252. In some embodiments, as shown in FIG. 3, the cleaning station 204 can include a first cleaning tank 256 and a second cleaning tank 258. The second cleaning tank 258 is located between the first cleaning tank 256 and the alkali tank 206, and the second cleaning tank 258 is located between the first cleaning tank 256 and the alkali tank. Between 206. In an exemplary embodiment, the first cleaning tank 256 can be located in the second cleaning tank 258, as shown in FIG.
請再次參照第3圖，本實施方式之矽晶片清洗機構200更包含第一沖洗裝置246與第二沖洗裝置260。第一沖洗裝置246設於第一清洗槽256中，以對在第一清洗槽256中之矽晶片252進行沖洗。而第一清洗槽256可承接以第一沖洗裝置246進行矽晶片252之清洗後所流下之第一清洗液268。第二沖洗裝置260則設於第二清洗槽258中，以對經第一沖洗裝置246清洗後且進入第二清洗槽258中之矽晶片252進行沖洗。同樣地，第二清洗槽258可承接以第二沖洗裝置260進行矽晶片252的再次清洗後所流下之第二清洗液270。Referring again to FIG. 3, the wafer cleaning mechanism 200 of the present embodiment further includes a first rinsing device 246 and a second rinsing device 260. The first rinsing device 246 is disposed in the first cleaning tank 256 to rinse the ruthenium wafer 252 in the first cleaning tank 256. The first cleaning tank 256 can receive the first cleaning liquid 268 flowing down after the cleaning of the silicon wafer 252 by the first processing device 246. The second rinsing device 260 is disposed in the second cleaning tank 258 to rinse the ruthenium wafer 252 that has been washed by the first rinsing device 246 and enters the second cleaning tank 258. Similarly, the second cleaning tank 258 can receive the second cleaning liquid 270 that is discharged after the second cleaning device 260 performs the cleaning of the silicon wafer 252 again.
在一些實施例中，第一沖洗裝置246可包含一組水刀248與250，其中這些水刀248與250可分別位於矽晶片252經過路徑的相對二側，例如上下二側，以在矽晶片252通過時分別從矽晶片252之相對二側朝矽晶片252噴射第一清洗液268，來沖洗矽晶片252。在一示範例子中，第一 清洗液268可採用去離子水。同樣地，第二沖洗裝置260可包含一組水刀262與264，其中這些水刀262與264可分別位於矽晶片252經過路徑的相對二側，例如上下二側，以在矽晶片252通過時分別從矽晶片252之相對二側朝矽晶片252噴射第二清洗液270，來進一步沖洗矽晶片252。在一示範例子中，第二清洗液270同樣可採用去離子水。In some embodiments, the first flushing device 246 can include a set of water jets 248 and 250, wherein the water jets 248 and 250 can be respectively located on opposite sides of the path of the tantalum wafer 252, such as upper and lower sides, for the tantalum wafer. The 252 wafer 252 is rinsed by ejecting the first cleaning liquid 268 from the opposite sides of the silicon wafer 252 toward the germanium wafer 252, respectively. In an exemplary example, the first The cleaning liquid 268 can be deionized water. Similarly, the second flushing device 260 can include a set of water jets 262 and 264, wherein the water jets 262 and 264 can be respectively located on opposite sides of the path of the tantalum wafer 252, such as upper and lower sides, for the passage of the tantalum wafer 252. The second cleaning liquid 270 is ejected from the opposite sides of the tantalum wafer 252 toward the tantalum wafer 252, respectively, to further rinse the tantalum wafer 252. In an exemplary embodiment, the second cleaning fluid 270 can also employ deionized water.
如第2圖所示，矽晶片清洗機構200更包含管路218，此管路218與第一清洗槽256連通。而排水閥232則設置在管路218上。可透過控制排水閥232的開與關，來管理第一清洗槽256之第一清洗液268的排放。在一實施例中，第一清洗液268由第一沖洗裝置246對矽晶片252噴射後，不再循環回收使用，而直接經由管路218與排水閥232排出。從第一清洗槽256所排放的第一清洗液268一般為低濃度的酸性廢水。As shown in FIG. 2, the silicon wafer cleaning mechanism 200 further includes a line 218 that communicates with the first cleaning tank 256. The drain valve 232 is disposed on the line 218. The discharge of the first cleaning liquid 268 of the first cleaning tank 256 can be managed by controlling the opening and closing of the drain valve 232. In one embodiment, the first cleaning fluid 268 is ejected from the first rinsing device 246 to the silicon wafer 252, and is not recycled for recycling, but is directly discharged via the line 218 and the drain valve 232. The first cleaning liquid 268 discharged from the first cleaning tank 256 is generally a low concentration of acidic wastewater.
本實施方式之矽晶片清洗機構200更可包含清洗液供應源214。清洗液供應源214可直接供應第二清洗液270予第二沖洗裝置260。由於第二清洗液270為清洗液供應源214直接提供而非其他清洗槽之循環液體，因此第二清洗液270之酸鹼值較符合所需。此外，第二清洗液270之潔淨度也較高。如第3圖所示，泵裝置272設置在第二清洗槽258中，以將第二清洗槽258內中清洗過矽晶片252之第二清洗液270循環回收到第一沖洗裝置246使用。The silicon wafer cleaning mechanism 200 of the present embodiment may further include a cleaning liquid supply source 214. The cleaning fluid supply source 214 can directly supply the second cleaning fluid 270 to the second flushing device 260. Since the second cleaning liquid 270 is directly supplied to the cleaning liquid supply source 214 instead of the circulating liquid of the other cleaning tanks, the pH value of the second cleaning liquid 270 is more desirable. In addition, the cleanliness of the second cleaning liquid 270 is also high. As shown in FIG. 3, the pump unit 272 is disposed in the second cleaning tank 258 to recycle the second cleaning liquid 270 in the second cleaning tank 258 that has been cleaned through the crucible wafer 252 to the first processing unit 246.
由於第二清洗液270係由清洗液供應源214直接供應，而且矽晶片252進入清洗站204後已先由第一沖洗裝 置246清洗過一次，因此清洗過矽晶片252之第二清洗液270具有較低濃度的酸度且相對較為潔淨。在一些實施例中，可額外設置過濾器(未繪示)，以在清洗過矽晶片252的第二清洗液270進入泵裝置272前，先過濾第二清洗液270，以進一步提升此時之第二清洗液270的潔淨度。因此，在不循環使用第一清洗液268，而僅將清洗過矽晶片252之第二清洗液270再循環至第一沖洗裝置246，來進行回收使用的情況下，不僅可提升矽晶片252表面上之殘酸去除效果，亦可有效節省清洗液之用量。此外，由於不循環使用第一清洗液268，因此先後經第一沖洗裝置246與第二沖洗裝置260後之矽晶片252上殘留清洗液為非常接近中性或酸度相當低的液體。Since the second cleaning liquid 270 is directly supplied by the cleaning liquid supply source 214, and the silicon wafer 252 enters the cleaning station 204, it is firstly loaded by the first cleaning device. The second cleaning solution 270 of the cleaning wafer 252 has a lower concentration of acidity and is relatively clean. In some embodiments, a filter (not shown) may be additionally provided to filter the second cleaning liquid 270 before the second cleaning liquid 270 of the cleaning wafer 252 enters the pump device 272 to further enhance the time. The cleanliness of the second cleaning liquid 270. Therefore, in the case where the first cleaning liquid 268 is not recycled, and only the second cleaning liquid 270 of the cleaning wafer 252 is recycled to the first processing device 246 for recycling, not only the surface of the silicon wafer 252 can be lifted. The residual acid removal effect can also effectively save the amount of cleaning liquid. In addition, since the first cleaning liquid 268 is not recycled, the cleaning liquid remaining on the wafer 252 after the first rinsing device 246 and the second rinsing device 260 is a liquid which is very close to neutral or relatively low in acidity.
如第3圖所示，在一些實施例中，矽晶片清洗機構200更可選擇性包含第一風乾裝置254。此第一風乾裝置254可為一風刀。第一風乾裝置254設置在第一清洗槽256中，且位於第一沖洗裝置246之下游，較佳可鄰近於第一沖洗裝置246。第一風乾裝置254不僅可將經第一沖洗裝置246沖洗後之矽晶片252上的殘留第一清洗液268吹除，更可將噴向第二清洗槽258之第一清洗液268吹回第一清洗槽256，以有效避免酸性濃度較高之第一清洗液268進入第二清洗槽258，進而可避免第一清洗液268造成濃度較低之第二清洗液270的酸性濃度提高。As shown in FIG. 3, in some embodiments, the silicon wafer cleaning mechanism 200 more selectively includes a first air drying device 254. The first air drying device 254 can be a wind knife. The first air drying device 254 is disposed in the first cleaning tank 256 and is located downstream of the first flushing device 246, preferably adjacent to the first flushing device 246. The first air drying device 254 can not only blow off the residual first cleaning liquid 268 on the silicon wafer 252 after being washed by the first cleaning device 246, but also blow back the first cleaning liquid 268 sprayed to the second cleaning tank 258. The cleaning tank 256 is configured to effectively prevent the first cleaning liquid 268 having a higher acid concentration from entering the second cleaning tank 258, thereby preventing the first cleaning liquid 268 from causing an increase in the acid concentration of the second cleaning liquid 270 having a lower concentration.
在一些實施例中，矽晶片清洗機構200更可選擇性包含第二風乾裝置266。此第二風乾裝置266同樣可為一風 刀。第二風乾裝置266設置在第二清洗槽258中，且位於第二沖洗裝置260之下游，較佳可鄰近於第二沖洗裝置260。第二風乾裝置266可將經第二沖洗裝置246沖洗後之矽晶片252上的殘留第二清洗液270吹除，進而可減低隨著矽晶片252而進入到鹼槽206之第二清洗液270的量。如此一來，可有效減少帶酸性之殘留第二清洗液270與鹼槽206內之鹼液因酸鹼中和反應而產生的結晶量，進而可避免風乾裝置、管路或過濾器阻塞。In some embodiments, the silicon wafer cleaning mechanism 200 further selectively includes a second air drying device 266. The second air drying device 266 can also be a wind Knife. The second air drying device 266 is disposed in the second cleaning tank 258 and is located downstream of the second flushing device 260, preferably adjacent to the second flushing device 260. The second air drying device 266 can blow off the residual second cleaning liquid 270 on the silicon wafer 252 after being washed by the second processing device 246, thereby reducing the second cleaning liquid 270 entering the alkali tank 206 along with the silicon wafer 252. The amount. In this way, the amount of crystallization of the alkaline cleaning liquid 270 with acidity and the alkali solution in the alkali tank 206 due to acid-base neutralization reaction can be effectively reduced, thereby preventing clogging of the air drying device, the pipeline or the filter.
在一實施例中，鹼槽206可盛裝有氫氧化鉀(KOH)等鹼液，以對矽晶片252進行所需之濕式處理。在一些例子中，矽晶片清洗機構200可根據製程需求而進一步設有管路222與排水閥236，其中管路222與鹼槽206連通，排水閥236則設於管路222上。可透過控制排水閥236的開與關，來管理鹼槽206之鹼液的排放。由於應用矽晶片清洗機構200可有效減少殘留第二清洗液270與鹼槽206內之鹼液因酸鹼中和反應而產生的結晶量，因此可避免廠務回收鹼槽清洗液過酸而無法回收處理的問題。In one embodiment, the alkali bath 206 may contain an alkali solution such as potassium hydroxide (KOH) to perform the desired wet treatment of the tantalum wafer 252. In some examples, the silicon wafer cleaning mechanism 200 can further be provided with a conduit 222 and a drain valve 236 according to process requirements, wherein the conduit 222 is in communication with the alkali reservoir 206 and the drain valve 236 is disposed on the conduit 222. The discharge of the lye from the alkali tank 206 can be managed by controlling the opening and closing of the drain valve 236. Since the application of the wafer cleaning mechanism 200 can effectively reduce the amount of crystallization of the residual alkali liquid 270 and the alkali solution in the alkali tank 206 due to acid-base neutralization reaction, it is possible to avoid the acid recovery of the alkali recovery liquid in the factory. Recycling issues.
如第2圖所示，在一些實施例中，矽晶片清洗機構200更可選擇性包含第四清洗槽208。此第四清洗槽208位於鹼槽206之下游。第四清洗槽208可設有如同第一沖洗裝置246或第二沖洗裝置260般的一對水刀，此對水刀可分別位於矽晶片252經過路徑的相對二側，例如上下二側，以在矽晶片252通過時分別從矽晶片252之相對二側朝矽晶片252噴射清洗液，來沖洗矽晶片252上之殘留鹼液。 在一示範例子中，此清洗液同樣可採用去離子水。此外，第四清洗槽208之清洗液可直接由清洗液供應源214供應。As shown in FIG. 2, in some embodiments, the silicon wafer cleaning mechanism 200 further selectively includes a fourth cleaning bath 208. This fourth cleaning tank 208 is located downstream of the alkali tank 206. The fourth cleaning tank 208 may be provided with a pair of water jets like the first flushing device 246 or the second flushing device 260. The pair of water jets may be respectively located on opposite sides of the path of the tantalum wafer 252, for example, on the upper and lower sides, The cleaning liquid is sprayed from the opposite sides of the silicon wafer 252 toward the silicon wafer 252, respectively, while the germanium wafer 252 passes, to rinse the residual alkali liquid on the germanium wafer 252. In an exemplary embodiment, the cleaning fluid can also be deionized water. Further, the cleaning liquid of the fourth cleaning tank 208 can be directly supplied from the cleaning liquid supply source 214.
如第2圖所示，矽晶片清洗機構200更包含管路224、以及排水閥238與240，此管路224與第四清洗槽208連通。而排水閥238與240則設置在管路224上。可透過控制排水閥238與240的開與關，來分別管理第四清洗槽208之清洗液朝鹼性廢水收集區與回收區的排放。As shown in FIG. 2, the 矽 wafer cleaning mechanism 200 further includes a line 224 and drain valves 238 and 240 that communicate with the fourth cleaning tank 208. Drain valves 238 and 240 are disposed on line 224. The discharge of the cleaning liquid of the fourth cleaning tank 208 toward the alkaline wastewater collection area and the recovery area can be separately managed by controlling the opening and closing of the drain valves 238 and 240.
在一些實施例中，矽晶片清洗機構200更可選擇性包含第二酸槽210。此第二酸槽210位於第四清洗槽208之下游。在一實施例中，此第二酸槽210可盛裝有氫氟酸等酸液，以對矽晶片252進行例如蝕刻等濕式處理。在一些例子中，矽晶片清洗機構200可根據製程需求而進一步設有管路226與排水閥242，其中管路226與此第二酸槽210連通，排水閥242則設於管路226上。同樣地，可透過控制排水閥242的開與關，來管理第二酸槽210之酸液的排放。從第二酸槽210所排放的酸液一般為高濃度的酸性廢水。In some embodiments, the silicon wafer cleaning mechanism 200 further selectively includes a second acid tank 210. The second acid tank 210 is located downstream of the fourth cleaning tank 208. In one embodiment, the second acid tank 210 may contain an acid solution such as hydrofluoric acid to perform wet processing such as etching on the tantalum wafer 252. In some examples, the silicon wafer cleaning mechanism 200 can further be provided with a conduit 226 and a drain valve 242 according to process requirements, wherein the conduit 226 is in communication with the second acid reservoir 210 and the drain valve 242 is disposed on the conduit 226. Similarly, the discharge of the acid in the second acid tank 210 can be managed by controlling the opening and closing of the drain valve 242. The acid liquid discharged from the second acid tank 210 is generally a high concentration of acidic wastewater.
在一些實施例中，矽晶片清洗機構200更可選擇性包含第三清洗槽212。此第三清洗槽212位於第二酸槽210之下游，亦即也位於第二酸槽210之上游鹼槽206的下游。而且，如第2圖所示，第四清洗槽208介於鹼槽206與第三清洗槽212之間，第二酸槽210介於第四清洗槽208與第三清洗槽212之間。第三清洗槽212可設有如同第一沖洗裝置246或第二沖洗裝置260般的一對水刀，此對水刀 可分別位於矽晶片252經過路徑的相對二側，例如上下二側，以在矽晶片252通過時分別從矽晶片252之相對二側朝矽晶片252噴射清洗液，來沖洗矽晶片252上之殘留酸液。在一示範例子中，此清洗液同樣可採用去離子水。此外，第三清洗槽212之清洗液可直接由清洗液供應源214供應。In some embodiments, the silicon wafer cleaning mechanism 200 further selectively includes a third cleaning tank 212. The third cleaning tank 212 is located downstream of the second acid tank 210, that is, also downstream of the alkali tank 206 upstream of the second acid tank 210. Further, as shown in FIG. 2, the fourth cleaning tank 208 is interposed between the alkali tank 206 and the third cleaning tank 212, and the second acid tank 210 is interposed between the fourth cleaning tank 208 and the third cleaning tank 212. The third cleaning tank 212 may be provided with a pair of water jets like the first flushing device 246 or the second flushing device 260. They may be respectively located on opposite sides of the path of the germanium wafer 252, for example, on the upper and lower sides, to spray the cleaning liquid from the opposite sides of the germanium wafer 252 toward the germanium wafer 252, respectively, when the germanium wafer 252 passes, to rinse the residue on the germanium wafer 252. Acid solution. In an exemplary embodiment, the cleaning fluid can also be deionized water. Further, the cleaning liquid of the third cleaning tank 212 may be directly supplied from the cleaning liquid supply source 214.
矽晶片清洗機構200更包含管路276以及排水閥244，此管路276與第三清洗槽212連通。而排水閥244則設置在管路276上。可透過控制排水閥244的開與關，來管理第三清洗槽212之清洗液的排放。從第三清洗槽212所排放的清洗液一般為低濃度的酸性廢水。The wafer cleaning mechanism 200 further includes a line 276 and a drain valve 244 that communicates with the third cleaning tank 212. The drain valve 244 is disposed on the line 276. The discharge of the cleaning liquid of the third cleaning tank 212 can be managed by controlling the opening and closing of the drain valve 244. The cleaning liquid discharged from the third cleaning tank 212 is generally a low concentration of acidic wastewater.
如第2圖所示，在一些實施例中，矽晶片清洗機構200更包含管路220、228與274，以及閥234。管路228與第三清洗槽212連通，亦與管路220和274連通。閥234設於管路220上。第三清洗槽212之溢流清洗液可從管路228流出，而透過閥234的設置，可阻隔溢流清洗液經由管路220而流向清洗站204，藉以使第三清洗槽212之帶酸性的溢流清洗液經由管路274而排掉。從第三清洗槽212所排放的溢流清洗液一般為低濃度的酸性廢水。As shown in FIG. 2, in some embodiments, the silicon wafer cleaning mechanism 200 further includes lines 220, 228, and 274, and a valve 234. Line 228 is in communication with third cleaning tank 212 and is also in communication with lines 220 and 274. Valve 234 is provided on line 220. The overflow cleaning liquid of the third cleaning tank 212 can flow out from the pipeline 228, and the passage of the valve 234 can block the overflow cleaning liquid from flowing to the cleaning station 204 via the pipeline 220, thereby making the third cleaning tank 212 acidic. The overflow cleaning fluid is drained through line 274. The overflow cleaning liquid discharged from the third cleaning tank 212 is generally a low concentration of acidic wastewater.
藉由在管路220上設置閥234來阻隔第三清洗槽212之偏酸溢流清洗液往清洗站204傳送，再加上第二清洗槽258之第二清洗液270係直接由清洗液供應源214所提供，且第一清洗槽256之酸性濃度較高的第一清洗液268不循環回收使用，如此一來可大大地縮減矽晶片252經清 洗站204清洗後所殘留在矽晶片252上之液體的酸度。因此，可有效降低酸鹼中和所產生之結晶量，而可避免結晶塞住矽晶片清洗機構200的所有風乾裝置、管路或過濾器，以及形成在矽晶片252之傳送裝置上。故，風乾裝置長時間使用也不易阻塞，可避免矽晶片252的風乾程度低，而造成鹼槽206之鹼液濃度偏低，進而可解決廠務回收鹼槽清洗液過酸而無法回收的問題，並可大大的縮減因清理風乾裝置所需之停工期，也可有效改善矽晶片252之棕斑重工問題。此外，亦可避免因傳送裝置上有結晶而導致矽晶片破片。The valve 234 is disposed on the pipeline 220 to block the partial acid overflow cleaning liquid of the third cleaning tank 212 from being sent to the cleaning station 204, and the second cleaning liquid 270 of the second cleaning tank 258 is directly supplied by the cleaning liquid. The first cleaning liquid 268 having a higher acid concentration of the first cleaning tank 256 is not recycled and used, so that the silicon wafer 252 can be greatly reduced. The acidity of the liquid remaining on the tantalum wafer 252 after washing station 204 is cleaned. Therefore, the amount of crystallization generated by neutralization of the acid and alkali can be effectively reduced, and all the air drying means, piping or filter for crystallization of the silicon wafer cleaning mechanism 200 can be prevented from being formed, and formed on the transfer device of the silicon wafer 252. Therefore, the air drying device is not easy to block for a long time, and the air drying degree of the silicon wafer 252 can be prevented to be low, and the alkali solution concentration of the alkali tank 206 is low, thereby solving the problem that the alkali storage tank cleaning liquid of the factory can be recovered and cannot be recovered. , and can greatly reduce the downtime required for cleaning the air drying device, and can also effectively improve the brown spot rework problem of the silicon wafer 252. In addition, it is also possible to avoid fragmentation of the wafer due to crystallization on the conveyor.
由上述之實施方式可知，本發明之一優點就是因為矽晶片清洗機構之第一酸槽與下游之鹼槽之間的清洗站設有二清洗槽，第二清洗槽之清洗液直接由清洗液供應源供給，並循環予第一沖洗裝置使用，而第一清洗槽經沖洗過之清洗液則排掉。因此，可大大地降低矽晶片經清洗後的表面殘酸，而可有效減少鹼槽與矽晶片運送裝置因酸鹼中和而產生的結晶，進而可避免風乾裝置、管路與過濾器阻塞，矽晶片因運送裝置上的結晶而破裂，矽晶片棕斑重工問題，設備停機清理風乾裝置，以及廠務回收鹼槽清洗液過酸而無法回收的問題。It can be seen from the above embodiments that one of the advantages of the present invention is that the cleaning station between the first acid tank of the silicon wafer cleaning mechanism and the downstream alkali tank is provided with two cleaning tanks, and the cleaning liquid of the second cleaning tank is directly used by the cleaning liquid. The supply source is supplied and circulated to the first rinsing device, and the rinsing liquid in the first rinsing tank is drained. Therefore, the surface residual acid of the ruthenium wafer after cleaning can be greatly reduced, and the crystallization of the alkali tank and the ruthenium wafer transport device due to acid-base neutralization can be effectively reduced, thereby preventing the air-drying device, the pipeline and the filter from being blocked. The wafer is broken due to crystallization on the transport device, the problem of wafer brown spot rework, the equipment is shut down to clean the air dryer, and the factory recovery alkali tank cleaning solution is too acid to be recovered.
由上述之實施方式可知，本發明之另一優點就是因為矽晶片清洗機構之第一酸槽與下游之鹼槽之間的清洗站的第一清洗槽設有風乾裝置，以將噴向下游之第二清洗槽的清洗液吹回第一清洗槽。因此，可降低對第二清洗槽之 清洗液之酸鹼性的影響，而可進一步降低矽晶片經清洗後之表面殘留液體的酸度。It can be seen from the above embodiments that another advantage of the present invention is that the first cleaning tank of the cleaning station between the first acid tank of the silicon wafer cleaning mechanism and the downstream alkali tank is provided with an air drying device to spray the downstream side. The cleaning liquid of the second cleaning tank is blown back to the first cleaning tank. Therefore, the second cleaning tank can be lowered The acidity and alkalinity of the cleaning solution can further reduce the acidity of the residual liquid on the surface of the silicon wafer after cleaning.
由上述之實施方式可知，本發明之又一優點就是因為矽晶片清洗機構之第一酸槽與鹼槽之間之清洗站的第二個清洗槽的清洗液係由清洗液供應源直接供給，因此可使用更潔淨之清洗液來進行此清洗站的矽晶片清洗。According to the above embodiments, another advantage of the present invention is that the cleaning liquid of the second cleaning tank of the cleaning station between the first acid tank and the alkali tank of the silicon wafer cleaning mechanism is directly supplied by the cleaning liquid supply source. Therefore, a cleaner cleaning solution can be used to perform the wafer cleaning of the cleaning station.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何在此技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the present invention has been described above by way of example, it is not intended to be construed as a limitation of the scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
204‧‧‧清洗站204‧‧‧Washing station
214‧‧‧清洗液供應源214‧‧‧cleaning fluid supply
218‧‧‧管路218‧‧‧ pipeline
246‧‧‧第一沖洗裝置246‧‧‧First flushing device
248‧‧‧水刀248‧‧‧Waterjet
250‧‧‧水刀250‧‧‧Waterjet
252‧‧‧矽晶片252‧‧‧矽 wafer
254‧‧‧第一風乾裝置254‧‧‧First air dryer
256‧‧‧第一清洗槽256‧‧‧First cleaning tank
258‧‧‧第二清洗槽258‧‧‧Second cleaning tank
260‧‧‧第二沖洗裝置260‧‧‧second flushing device
262‧‧‧水刀262‧‧‧Waterjet
264‧‧‧水刀264‧‧‧Waterjet
266‧‧‧第二風乾裝置266‧‧‧Second air drying device
268‧‧‧第一清洗液268‧‧‧First cleaning solution
270‧‧‧第二清洗液270‧‧‧Second cleaning solution
272‧‧‧泵裝置272‧‧‧ pump device
Claims (7)
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| TW102121393A TWI512818B (en) | 2013-06-17 | 2013-06-17 | Cleaning apparatus for silicon wafer |
| CN201310308659.9A CN104226626A (en) | 2013-06-17 | 2013-07-22 | Cleaning mechanism for silicon wafer |
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| TWI512818B true TWI512818B (en) | 2015-12-11 |
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| US11037805B2 (en) | 2018-11-23 | 2021-06-15 | Nanya Technology Corporation | Wafer cleaning apparatus and method of cleaning wafer |
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| TW468205B (en) * | 2000-10-13 | 2001-12-11 | Macronix Int Co Ltd | Device and method to prevent the re-adsorption of micro particles in wafer cleaning process |
| TW200946254A (en) * | 2008-03-07 | 2009-11-16 | Mitsui Du Pont Fluorchemical | Cleaning method and cleaning system for electronic part |
| TW201309852A (en) * | 2011-08-31 | 2013-03-01 | Sumitomo Precision Prod Co | Method of regenerating chelating material and substrate processing apparatus |
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| JPH08264500A (en) * | 1995-03-27 | 1996-10-11 | Sony Corp | Cleaning of substrate |
| JP3957264B2 (en) * | 2001-12-04 | 2007-08-15 | シルトロニック・ジャパン株式会社 | Semiconductor substrate cleaning method |
| CN102226983B (en) * | 2011-05-11 | 2013-02-13 | 常州天合光能有限公司 | Etching cleaning equipment and etching cleaning technology |
| CN202238742U (en) * | 2011-09-16 | 2012-05-30 | 浚鑫科技股份有限公司 | Silicon wafer washing mechanism |
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| TW468205B (en) * | 2000-10-13 | 2001-12-11 | Macronix Int Co Ltd | Device and method to prevent the re-adsorption of micro particles in wafer cleaning process |
| TW200946254A (en) * | 2008-03-07 | 2009-11-16 | Mitsui Du Pont Fluorchemical | Cleaning method and cleaning system for electronic part |
| TW201309852A (en) * | 2011-08-31 | 2013-03-01 | Sumitomo Precision Prod Co | Method of regenerating chelating material and substrate processing apparatus |
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