TWI509101B - 用於氣體輸送的方法及設備 - Google Patents
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Description
本發明之實施例大體係關於用於氣體輸送的方法及設備,且更特定言之,本發明之實施例係關於具有低蒸氣壓之氣體的輸送。
將固態或液態的低蒸氣壓前驅物遠程輸送至處理腔室需要加熱安瓿及長氣管,該安瓿容納低蒸氣壓前驅物,該長氣管將汽化的低蒸氣壓前驅物載運至處理腔室以(例如)使基板暴露於該前驅物。然而,長氣管的加熱/隔離易失敗且經常難以維持。此外,發明人注意到前驅物的遠程輸送亦可能具有慢反應速率,據信該慢反應速率歸因於氣管體積及自安瓿的前驅物的有限流動速率。發明人已進一步注意到此種加熱輸送系統亦需要上游質量流量控制器(MFC)以控制氣體流動速率,以避免該MFC內部的任何凝結問題。然而,將MFC定位於安瓿之上游使得該安瓿對下游氣壓波動很敏感,此影響前驅物的輸送準確度。
因此,發明人在此提供用於低蒸氣壓前驅物的氣體輸送的改良方法及設備。
本文揭示用於氣體輸送的方法及設備。在一些實施例
中,氣體輸送系統包括安瓿,該安瓿用於儲存固態或液態前驅物;第一導管,該第一導管耦接至安瓿,且該第一導管具有第一末端,該第一末端耦接至第一氣源以將前驅物的蒸氣從安瓿中抽取到第一導管中;第二導管,該第二導管在位於安瓿下游的第一接合處耦接至第一導管,且該第二導管具有第一末端及第二末端,該第一末端耦接至第二氣源且該第二末端耦接至處理腔室;及熱源,該熱源經配置以加熱安瓿以及從該安瓿至第二導管的第一導管的至少第一部分,並且僅加熱第二導管的第二部分,其中第二導管的第二部分包括第一接合處。
在一些實施例中,將前驅物輸送至處理腔室的方法包括以下步驟:當使第一氣體流動時,汽化前驅物以在第一加熱容積中形成濃縮前驅物氣體混合物;在第二加熱容積中將濃縮前驅物氣體混合物與第二氣體混合以形成稀釋前驅物氣體混合物,其中在大約攝氏25度的溫度下,稀釋前驅物氣體混合物中的前驅物的分壓小於該前驅物之蒸氣壓;及使稀釋前驅物氣體混合物經由非加熱第三容積流動至處理腔室。
本發明之其他及進一步實施例描述如下。
本文揭示用於氣體輸送的方法及設備。本發明之方法及設備有利地提供了在高效率和輸送精確性下對固態或液態的低蒸氣壓前驅物的汽化,同時減少了能量輸入成
本並提高了輸送速率。例如,本發明之實施例中的氣體輸送系統可能需要僅加熱載運汽化前驅物的導管的一部分。此外,本發明之一些實施例中的氣體輸送系統有利地考慮到流量控制裝置,諸如質量流量控制器或類似裝置,流量控制裝置設置在汽化前驅物的下游,此是由於在輸送期間前驅物發生凝結的有限可能性。以下論述本發明的方法及設備之其他及進一步實施例以及優勢。
第1A圖至第1B圖描繪根據本發明之至少一些實施例的氣體輸送系統100。氣體輸送系統100可包括用於儲存固態或液態前驅物的安瓿102。例如,前驅物可以是用於諸如沈積製程或類似製程中的任何適合的低蒸氣壓前驅物。示範性前驅物可包括二氯矽烷(DCS)、三氯矽烷(TCS)、四氯化碳(CCl4)或類似物。第一導管104可耦接至安瓿102。第一導管104可包括耦接至第一氣源108的第一末端106。如第1A圖中所示,第一氣源108設置在安瓿102的上游。第一導管104可用來將前驅物的蒸氣自安瓿抽取至第一導管104中。
舉例而言,如第2A圖至第2B圖中所示,第一導管104之各種實施例是可能的。例如,當使用液態前驅物時,第一導管104可耦接至安瓿102以便第一導管進入安瓿102的容積中且第一導管104具有設置在該液態前驅物表面下方之末端202,以便第一氣體可以作氣泡狀穿過前驅物以在氣流內載運前驅物的蒸氣及/或小滴。如第2A圖中所示,第二末端204可設置在液態前驅物上
方以接收該第一氣體及前驅物(末端204)之濃縮前驅物氣體混合物。或者,第一末端202可設置在液體前驅物表面的上方。
或者,如第2B圖中所示,在一些實施例中,第一導管104可耦接至安瓿102以便來自固態前驅物的昇華的前驅物可以經抽取穿過安瓿102中的開口進入第一導管104。昇華的前驅物可以與流經第一導管104的第一氣體混合,以從第一氣體及昇華的前驅物形成濃縮前驅物氣體混合物。
返回至第1A圖,第一氣體的流量可由第一流量控制器110控制。第一流量控制器可以在第一導管104的第一末端106與安瓿102之間耦接至第一導管104。第一流量控制器110可為質量流量控制器或類似裝置。
第二導管112可在位於安瓿102下游的第一接合處114耦接至第一導管104。如本文所使用,術語「接合處」可包括導管之多個流動路徑或區段的交集,諸如藉由T形接頭或導管的區段、諸如允許選擇第一或者第二路徑的閥的選擇性閥,或類似物。第二導管112可具有耦接至第二氣源118的第一末端116。第二導管112可具有耦接至處理腔室122的第二末端120。第二氣源118可提供第二氣體以在第一接合處114稀釋進入第二導管112的濃縮前驅物氣體混合物。
在一些實施例中,氣體輸送系統100的各部分可能需要加熱,以汽化前驅物及/或將前驅物維持在汽化狀態。
例如,熱源124可經配置以加熱安瓿102以及從安瓿102到第二導管112的第一接合處114的第一導管104的至少第一部分126。熱源124可是任何適合熱源,諸如加熱帶、強制氣流加熱櫃、熱交換器或類似裝置。此外且選擇性地,如第1A圖中所示,熱源124可加熱第一導管104的整體直到第一流量控制器110,或加熱該第一導管的整體直到第一氣源108(未圖示)。在一些實施例中,第一導管104可加熱直到第一氣源108。在該等實施例中,流量控制器應經配置以用於在加熱環境中操作。在一些實施例中,可提供封閉的加熱環境160以促進系統的有效率加熱。例如,在一些實施例中,封閉的加熱環境可包括包殼以包含或圍繞該等加熱部件及該導管的各部分。此等實施例可促進更均勻的加熱以及更高的效率。然而,使用包殼可造成系統耗費更久時間才達到穩定。在一些實施例中,封閉的加熱環境160可包括熱交換器類型的熱浴,使得系統的部分設置在該熱浴中加熱。由該熱浴提供的高熱質量及熱穩定可幫助減少嚴重過熱的可能性,該嚴重過熱可導致前驅物的分解。
熱源124可經配置以僅加熱第二導管112的第二部分128,其中第二部分128包括第一接合處114。如第1A圖中所示,第二部分128可在第一接合處114之兩側上延伸,或可僅在第一接合處114的下游延伸(未圖示)。第二導管112的第二部分128可包括某部分,在該部分中接收自第一導管104的濃縮前驅物氣體混合物與第二
氣體混合以形成稀釋前驅物氣體混合物。如以上所論述,需要加熱濃縮前驅物氣體混合物以防止前驅物從該濃縮前驅物氣體混合物中凝結出來。然而,一旦在例如大約攝氏25度的溫度的室溫下前驅物的分壓低於該前驅物的蒸氣壓,則該前驅物凝結的可能性可能受限。例如,藉由將第二氣體與該濃縮前驅物氣體混合物混合,對於該前驅物的分壓的如此條件可在第二導管112的第二部分128中新形成的稀釋前驅物氣體混合物中實現。因此,在室溫下,在稀釋前驅物氣體混合物中的前驅物的分壓可小於該前驅物的蒸氣壓。因此,第二導管112的剩餘部分(亦即第二導管112的第二部分128下游的部分)可能需要更少加熱或可能不須加熱,因為自稀釋前驅物氣體混合物的前驅物的凝結或許可以更少。
第二導管112可包括耦接至該第二導管112的第二流量控制器130。在一些實施例中,例如如第1A圖中所示,第二流量控制器130設置在第二導管112的第一末端116與第一接合處114之間,或設置在該第一接合處114的上游。例如,在圖示於第1A圖中之實施例中,第二流量控制器130以期望流動速率提供該第二氣體,以在第二導管112的第二部分128中與濃縮前驅物氣體混合物混合。
此外,在一些實施例中,諸如第1A圖所示,第二導管112可包括調壓器132,該調壓器132在第一接合處114與第二導管112的第二末端120之間設置於該第二
導管112中,以調節調壓器132與第二流量控制器130之間的(例如在調壓器132上游的)第二導管112中的氣壓。在一些實施例中,在使用如第1A圖所示之實施例的第二導管112中的氣壓可為約200托。例如,調壓器132對於防止第二導管112中的氣壓波動是必需的,因為若該第二導管112直接暴露於處理腔室122的氣壓下,則該第二導管112中會發生氣壓波動。例如,處理腔室122中的氣壓由於正執行的各種製程可能經常發生變化,該等正執行製程可在處理腔室122中引入製程氣體或該等製程需要處理腔室122中的氣壓發生變化。調壓器132的存在可穩定第二導管112中的氣壓,例如,該氣壓可導致一致的及可再生的前驅物加載在可流向處理腔室122的稀釋前驅物氣體混合物中。
或者,第二流量控制器130及調壓器132可如第1B圖中所示般進行配置。例如,如第1B圖中所示,第二流量控制器130可設置在該第一接合處114與該第二導管的第二末端120之間,或設置在該第一接合處114的下游。例如,在如第1B圖中所示之實施例中,第二流量控制器130可向處理腔室122提供該稀釋前驅物氣體混合物的期望流動速率。如第1B圖中所示之第二流量控制器130的下游定位可藉由本發明之方法及設備實現。例如,流量控制器(諸如質量流量控制器)通常不用於前驅物氣體混合物的下游,此是因為前驅物氣體混合物可發生凝結導致氣體混合物至處理腔室之輸送的不
準確性或對流量控制器造成破壞。然而,如本文中所論述,本發明之方法及設備減少或消除該稀釋前驅物氣體混合物中的前驅物凝結的可能性,從而在沒有在流量控制器中形成凝結伴隨的風險的情況下實現流量控制器的下游定位。
如第1B圖中所示,且亦為對第1A圖之替代,調壓器可設置在第二導管112的第一末端116與第一接合處114之間以調節在調節器132與第二流量控制器130之間的第二導管112中的氣壓。在一些實施例中,第二導管112中的氣壓可高於第1A圖之實施例中的氣壓,例如,至少大約500托。第二導管112中的氣壓可高於第1B圖之實施例中的氣壓以提供充分的上游氣壓至第二流量控制器130以用於精確操作。在一些實施例中,第二導管112中足以操作第二流量控制器的上游氣壓可為至少約500托。
在一些實施例中,氣體輸送系統100可包括在第二導管112的第二部分128下游的即時監控裝置。該即時監控裝置可串聯設置或沿取樣管道(例如,如以下論述之第三導管134)設置。該即時監控裝置可藉由本發明之方法及設備賦能。例如,稀釋前驅物氣體混合物中的前驅物的低濃度及在第二部分128外的第二導管112中加熱的缺失可賦能氣體輸送系統100中的即時監控裝置。
第三導管134可在第一接合處114與調壓器132中的氣之間耦接至第二導管(如第1A圖中所示),或該第三
導管134可在第一接合處114與在第二流量控制器130之間的第二接合處136耦接至第二導管(如第1B圖中所示)。第三導管134可具有第一末端138及第二末端140,該第一末端138耦接至第二接合處136且該第二末端140耦接至氣孔142。氣孔142可為(例如)耦接至減弱系統或類似系統的排氣管道或類似物。
即時監控裝置可為耦接至第三導管134的濃度感測器144。該濃度感測器可為用於決定諸如Piezocon®管道中之一管道內的濃度的任何適合感測器,該等Piezocon®管道可從紐約的Poughkeepsie的Lorex Industries,Inc購得。該濃度感測器144可決定經由第二導管112流向處理腔室122的稀釋前驅物氣體混合物中的前驅物的濃度。例如,流量限制器146可在濃度感測器144與氣孔142之間設置於第三導管134中,以限制稀釋前驅物氣體混合物在第二接合處136流向第三導管134,使得稀釋前驅物氣體混合物的實質部分向處理腔室122流動。因為混合後的濃度非常低且該取樣管道流動受限,所以限制了由取樣造成的蒸氣浪費。又,因為濃度感測器144是離線的,發生的任何凝結問題將極少造成問題或不造成問題。又,在濃度感測器144上執行的任何維持服務將對氣體輸送系統100的主要操作造成最小的影響。
氣體輸送系統100可包括接近第二導管112的第二末端120的第三接合處148。第四導管149具有第一末端及第二末端,該第一末端耦接至第三接合處148且該第
二末端耦接至氣孔150。在一些實施例中,氣孔142及氣孔150可為相同的排氣管,或氣孔142及氣孔150可耦接至同一排氣管。類似地,氣孔150可耦接至減弱系統或類似系統。第三接合處148可包括用於在至處理腔室122流動與至第四導管149(及氣孔150)流動之間做選擇的閥(未圖示)。例如,此類型的選擇性流動可在處理腔室122的處理期間使用,以使得前驅物在處理腔室122的處理時段內連續汽化,以限制諸如在稀釋前驅物氣體混合物或類似物的濃度的變化,否則該等變化會由啟動及停止第一氣體或類似物的流動引起。
控制器152可以直接(如第1A圖中所示)耦接至處理腔室122及/或諸如氣體輸送系統100之支撐系統,或者替代性地,控制器152可以經由與處理腔室及/或支撐系統相連的電腦(或控制器)耦接至處理腔室122及/或諸如氣體分配系統100之支撐系統。控制器152可以是任何形式的通用電腦處理器中之一個處理器,該處理器可用於用來控制各種腔室及子處理器的工業設定中。記憶體或中央處理器(CPU)156的電腦可讀取媒體154可以是一或更多種立即可用記憶體,諸如隨機存取記憶體(RAM)、唯讀記憶體(ROM)、軟碟、硬碟或任何其他形式的本端或遠端數位儲存器。記憶體154可儲存將由處理腔室122及/或諸如該氣體輸送系統100之各種支撐系統執行的常式。示範性常式可包括如下所述的用於輸送前驅物至處理腔室122的方法300。支撐電路158耦
接至CPU 156,用於以傳統方式支持處理器。該等電路包括快取記憶體、電源、時脈電路、輸入/輸出電路及子系統或類似物。
第3圖描繪輸送前驅物至諸如該處理腔室122之處理腔室的方法300的流程圖。下文參照第1A圖至第1B圖及第2A圖至第2B圖描述該方法300。當使第一氣體流動以在第一加熱容積中形成濃縮前驅物氣體混合物時,該方法300藉由汽化該前驅物從302處開始。第一加熱容積可包括第一導管104及安瓿102。第一氣體,如以上所論述,可由第一氣源108提供。第一氣體可包括載氣,諸如惰性氣體。在一些實施例中,第一氣體可為氮氣(N2)、氫氣(H2)、氬氣(Ar)、氦氣(He)或類似氣體中之一或更多種氣體。第一氣體的流量可以由第一流量控制器110控制。如以下所論述,第一氣體的流量可以反應於在稀釋前驅物氣體混合物中取樣的前驅物的濃度進行調整,該稀釋前驅物氣體混合物在步驟302處的第一加熱容積中形成的濃縮前驅物氣體混合物的下游形成。
前驅物可以藉由交替法汽化。例如,如以上所論述,前驅物可以是液態的。因此,在一些實施例中,如第2A圖中所圖示,第一氣體可以流入容納前驅物的第一加熱容積的部分(例如,安瓿102)。第一氣體可以泡狀地進入液體前驅物以形成濃縮前驅物氣體混合物。或者,如以上所論述,前驅物可以是固態的。因此,在一些實施例中,如第2B圖中所圖示,該固態前驅物可昇華及進
入第一導管104,在該第一導管104中,昇華的前驅物與流動的第一氣體混合以形成濃縮前驅物氣體混合物。
在步驟304處,在第二加熱容積(例如,第二部分128)中,濃縮前驅物氣體混合物可與第二氣體混合以形成稀釋前驅物氣體混合物。如以上所論述,第二氣體可以由第二氣源118提供。第二氣體可與第一氣體相同。在一些實施例中,第二氣體可是氮氣(N2)、氫氣(H2)、氬氣(Ar)、氦氣(He)或類似氣體中之一或更多種氣體。第二氣體可不同於第一氣體。然而,提供不同的第二氣體引入更多複雜性,使得下游的濃度監控更困難,此是因為提供不同的第二氣體所得的氣體將是三種成分的混合物而不是兩種成分的混合物。
第二氣體可以高於第一氣體之流動速率的流動速率流動。例如,第二氣體的流動速率可以是第一氣體的流動速率的大約5倍或5倍以上。第二氣體的較高流動速率可由本發明實現。由於氣流中飛濺或夾帶粒子的風險,通常,向安瓿提供單根管道來輸送前驅物,從而限制載氣的最大流動速率。然而,相反地,本發明之氣體輸送系統100沿第二導管提供第二氣體,該第二氣體不流經安瓿102因此,可迫使減少流動速率的情況,諸如安瓿102中前驅物的飛濺或類似情況,可以在氣體輸送系統100中避免。因此,第二導管112中第二氣體的流動速率(及因此氣體輸送系統的總流動速率)可高於一般氣體輸送系統中的流動速率。第二氣體的較高流動速率可
有利地改良氣體輸送系統中的反應時間,使該反應時間高達一般氣體輸送系統中的反應時間的大約100倍。
在步驟306處,稀釋前驅物氣體混合物可經由非加熱第三容積(例如,第二導管112的剩餘部分、第二部分128的下游)流動至處理腔室122。如以上所論述,在第二加熱容積中形成的稀釋前驅物氣體混合物可具有前驅物的分壓,在室溫下,例如大約攝氏25度的溫度下,該分壓小於該前驅物的蒸氣壓。因此,稀釋前驅物氣體混合物在非加熱第三容積中可能不需要額外加熱,因為前驅物的凝結或許更少。
稀釋前驅物氣體混合物的氣壓可以在第二加熱容積及非加熱第三容積中調節。例如,如在第1A圖中所示,稀釋前驅物氣體混合物的氣壓可在第二流量控制器130的下游調節,該第二流量控制器130用來控制來自第二氣源118的第二氣體的流量。或者,如第1B圖中所示,稀釋前驅物氣體混合物的氣壓可在第二流量控制器130的上游調節,在該第二流量控制器130的上游處,第二流量控制器可用來控制流向處理腔室122及第二氣源118的下游的稀釋前驅物氣體混合物的流量,該第二氣源118用於將第二氣體提供至第二容積。
稀釋前驅物氣體混合物可選擇性地流向處理腔室122。例如,稀釋前驅物氣體混合物可選擇性地流向處理腔室122或氣孔150。例如,流向處理腔室122及氣孔150的流量可根據在處理腔室122中執行的製程(諸如
沈積製程、循環沈積製程或類似製程)進行交替。
在一些實施例中,該方法300可包括例如使用取樣管道(例如,第三導管134)自第三容積中取樣稀釋前驅物氣體混合物的部分。稀釋前驅物氣體混合物的部分的取樣可以第一流動速率發生,該第一流動速率比流向處理腔室122的稀釋前驅物氣體混合物的第二部分的第二流動速率慢。例如,流量限制器146可促進在第一及第二流動速率之間的不一致,以確保該稀釋前驅物氣體混合物的實質部分流向處理腔室122。在稀釋前驅物氣體混合物中的前驅物的濃度可由例如使用如以上所論述之濃度感測器144決定。
若該稀釋前驅物氣體混合物中的該前驅物的經決定濃度不在期望容許位準內,控制前驅物濃度的氣體輸送系統的參數可做調整。例如,第一或第二加熱容積的加熱溫度、第一氣體的流動速率、第二氣體的流動速率或第二加熱容積及第三非加熱容積中的氣壓中之至少一者可進行調整直到達到期望容許位準。在一些實施例中,可增加第一氣流,以使得最終混合物中的前驅物的數量增加。控制第一氣體或第二氣體的流動速率可提供比控制加熱溫度更快的反應時間。例如,可能的最大流量將受前驅物的類型及溫度限制。除了提供足夠稀釋外,對第二氣體的流動速率沒有特殊要求。對於長管道中的氣體輸送,高達5slm的總流動速率可合乎需要。然而,特定溫度及流動速率將取決於在使用中之系統及前驅物的
特定配置。
因此,本文揭示用於氣體輸送之方法及設備。本發明之方法及設備有利地提供了在高效率和輸送精確性下對固態或液態低蒸氣壓前驅物的汽化,同時減少了能量輸入成本並改良了輸送速率。
雖然上述係關於本發明之實施例,但是在不脫離本發明基本範疇的情況下亦可設計本發明之其他及進一步實施例。
100‧‧‧氣體輸送系統
102‧‧‧安瓿
104‧‧‧第一導管
106‧‧‧第一末端
108‧‧‧第一氣源
110‧‧‧第一流量控制器
112‧‧‧第二導管
114‧‧‧第一接合處
116‧‧‧第一末端
118‧‧‧第二氣源
120‧‧‧第二末端
122‧‧‧處理腔室
124‧‧‧熱源
126‧‧‧第一部分
128‧‧‧第二部分
130‧‧‧第二流量控制器
132‧‧‧調壓器
134‧‧‧第三導管
136‧‧‧第二接合處
138‧‧‧第一末端
140‧‧‧第二末端
142‧‧‧氣孔
144‧‧‧濃度感測器
146‧‧‧流量限制器
148‧‧‧第三接合處
149‧‧‧第四導管
150‧‧‧氣孔
152‧‧‧控制器
154‧‧‧電腦可讀取媒體
156‧‧‧中央處理器
158‧‧‧支撐電路
160‧‧‧加熱環境
202‧‧‧第一末端
204‧‧‧第二末端
300‧‧‧方法
302‧‧‧步驟
304‧‧‧步驟
306‧‧‧步驟
以上簡略概述及以下更詳細論述之本發明之實施例可藉由參閱附圖描繪的本發明之說明性實施例來理解。然而應注意,該等附圖僅圖示本發明之典型實施例,並且因此不欲視為限制本發明的範疇,因為本發明可承認其他等效的實施例。
第1A圖至第1B圖描繪根據本發明之一些實施例的氣體輸送系統。
第2A圖至第2B圖描繪根據本發明之一些實施例的用於容納及汽化前驅物的替代設備。
第3圖描繪根據本發明之一些實施例之輸送前驅物的方法的流程圖。
為了促進理解,已經儘可能使用相同元件符號表示各附圖中共有的相同元件。該等附圖並非按比例繪製且可為了清晰而簡化。預期一個實施例之元件及特徵結構在
無進一步敍述的情況下可以有利地併入其他實施例中。
100‧‧‧氣體輸送系統
102‧‧‧安瓿
104‧‧‧第一導管
106‧‧‧第一末端
108‧‧‧第一氣源
110‧‧‧第一流量控制器
112‧‧‧第二導管
114‧‧‧第一接合處
116‧‧‧第一末端
118‧‧‧第二氣源
120‧‧‧第二末端
122‧‧‧處理腔室
124‧‧‧熱源
126‧‧‧第一部分
128‧‧‧第二部分
130‧‧‧第二流量控制器
132‧‧‧調壓器
134‧‧‧第三導管
136‧‧‧第二接合處
138‧‧‧第一末端
140‧‧‧第二末端
142‧‧‧氣孔
144‧‧‧濃度感測器
146‧‧‧流量限制器
148‧‧‧第三接合處
149‧‧‧第四導管
150‧‧‧氣孔
152‧‧‧控制器
154‧‧‧電腦可讀取媒體
156‧‧‧中央處理器
158‧‧‧支撐電路
160‧‧‧加熱環境
Claims (16)
- 一種將一前驅物輸送至一處理腔室之方法,該方法包含以下步驟:當使一第一氣體流動時,汽化一前驅物以在一第一加熱容積中形成一濃縮前驅物氣體混合物;在一第二加熱容積中將該濃縮前驅物氣體混合物與一第二氣體混合,以形成一稀釋前驅物氣體混合物,其中在大約攝氏25度的溫度下,該稀釋前驅物氣體混合物中之該前驅物的分壓小於該前驅物的蒸氣壓;及使該稀釋前驅物氣體混合物經由一非加熱第三容積流動至一處理腔室。
- 如請求項1所述之方法,該方法進一步包含以下步驟:調節該第二加熱容積及一第二流量控制器的下游的該第三容積中的該稀釋前驅物氣體混合物之氣壓,該第二流量控制器用於控制來自一第二氣源的該第二氣體的流量。
- 如請求項1所述之方法,該方法進一步包含以下步驟:調節該第二加熱容積及一第二流量控制器的上游的該第三容積中的該稀釋前驅物氣體混合物之該氣壓,該第二流量控制器用於控制流向該處理腔室及一第二氣源的下游的該稀釋前驅物氣體混合物的流量,該第二氣源用於將 該第二氣體提供至該第二容積。
- 如請求項1所述之方法,該方法進一步包含以下步驟:使用設置在一第一氣源與該第一加熱容積之間的一第一流量控制器來控制該第一加熱容積的上游的該第一氣體的流量,其中該第一氣源提供該第一氣體。
- 如請求項4所述之方法,其中汽化該前驅物之步驟進一步包含以下步驟:使該第一氣體流進容納該前驅物的該第一加熱容積的一部分中;及使該第一氣體以氣泡狀進入該前驅物之液體狀態中,以形成該濃縮前驅物氣體混合物。
- 如請求項4所述之方法,其中汽化該前驅物之步驟進一步包含以下步驟:使該前驅物昇華;及將該昇華的前驅物與該流動的第一氣體混合以形成該濃縮前驅物氣體混合物。
- 如請求項1所述之方法,其中使該稀釋前驅物氣體混合物流動至該處理腔室的步驟進一步包含以下步驟:在一腔室製程期間選擇性地使該稀釋前驅物氣體混合物流動至該處理腔室或一氣孔(vent)。
- 如請求項7所述之方法,其中在該腔室製程期間選擇性地使該稀釋前驅物氣體混合物流動至該處理腔室或該氣孔的步驟進一步包含以下步驟:維持該稀釋前驅物氣體混合物之連續流動,同時在該處理腔室與該氣孔之間交替該稀釋前驅物氣體混合物之流動。
- 如請求項1所述之方法,該方法進一步包含以下步驟:自該第三容積取樣該稀釋前驅物氣體混合物的一部分;及決定該稀釋前驅物氣體混合物中的該前驅物的一濃度。
- 如請求項9所述之方法,其中取樣該稀釋前驅物氣體混合物之該部分的步驟進一步包含以下步驟:以一第一流動速率取樣該稀釋前驅物氣體混合物的該部分,該第一流動速率比流向該處理腔室的該稀釋前驅物氣體混合物的一第二部分的一第二流動速率慢。
- 如請求項9所述之方法,該方法進一步包含以下步驟:若該稀釋前驅物氣體混合物中之該前驅物的該經決定之濃度不在一期望容許度位準內,則調整該第一加熱容積或該第二加熱容積的加熱溫度、該第一氣體的流動速率或該第二氣體的流動速率中之至少一者。
- 如請求項11所述之方法,該方法進一步包含以下步驟:若該稀釋前驅物氣體混合物中之該前驅物的該經決定之濃度不在一期望容許度位準內,則調整該第二加熱容積與該非加熱第三容積中的該氣壓。
- 如請求項1所述之方法,其中將該濃縮前驅物氣體混合物混合之步驟進一步包括以下步驟:以一流動速率流動該第二氣體,該流動速率是該第一氣體的流動速率的約5倍或更多倍。
- 一種將一前驅物輸送至一處理腔室之方法,該方法包含以下步驟:當使一第一氣體從一第一氣源通過一第一流量控制器流動時,汽化設置於一安瓿內的一前驅物或昇華設置於該安瓿內的一固體前驅物,以在該安瓿內的一第一加熱容積中形成一濃縮前驅物氣體混合物;將該濃縮前驅物氣體混合物與來自一第二氣源的一第二氣體混合,而在該安瓿外的一第二加熱容積中形成一稀釋前驅物氣體混合物,該第二氣源連接一第二流量控制器,其中在大約攝氏25度的溫度下,該稀釋前驅物氣體混合物中之該前驅物的分壓小於該前驅物的蒸氣壓;及使該稀釋前驅物氣體混合物從該第二加熱容積經由一非加熱第三容積流動至一處理腔室。
- 如請求項14所述之方法,進一步包含以下步驟:使用與該非加熱第三容積耦接的一濃度感測器決定該稀釋前驅物氣體混合物中之該前驅物的濃度。
- 如請求項15所述之方法,進一步包含以下步驟:利用一流量限制器限制該稀釋前驅物氣體混合物至該第三導管的流動,以選擇性引導該稀釋前驅物氣體混合物至一排氣系統,該流量限制器配置在該濃度感測器與一氣孔之間。
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CN103518005B (zh) | 2015-12-02 |
KR101691374B1 (ko) | 2016-12-30 |
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WO2012149327A2 (en) | 2012-11-01 |
US20120272898A1 (en) | 2012-11-01 |
TW201303070A (zh) | 2013-01-16 |
WO2012149327A3 (en) | 2013-03-21 |
CN103518005A (zh) | 2014-01-15 |
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