TWI508321B - 發光二極體及其形成方法 - Google Patents

發光二極體及其形成方法 Download PDF

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TWI508321B
TWI508321B TW097127580A TW97127580A TWI508321B TW I508321 B TWI508321 B TW I508321B TW 097127580 A TW097127580 A TW 097127580A TW 97127580 A TW97127580 A TW 97127580A TW I508321 B TWI508321 B TW I508321B
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Lu Chen Hwan
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Mutual Pak Technology Co Ltd
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Description

發光二極體及其形成方法
本發明係關於一種發光二極體(light emitting diode)及其製造方法，特別是，關於一種可提高光輸出強度之發光二極體及其製造方法。
發光二極體(Light Emitting Diode；LED)因具有生產成本低、結構簡單、低耗電、體積小以及安裝容易之優勢，已逐漸地取代一般光源，而被廣泛地應用在各個領域。
圖1為一種習知焊線式(wire bond)封裝之發光二極體100的剖面示意圖。發光二極體100包含一基板110、N型半導體層120、發光層130、P型半導體層125、以及電極140及145，其中電極140及145分別接觸N型半導體層120及P型半導體層125。發光二極體100位於一封裝基材160上，其中兩導線分別從發光二極體100的電極140及145連接到封裝基材160上的導電區150及155。
參考圖1，發光二極體100包含發光區A(即包含發光層130的區域)及非發光區B(即不包含發光層130的區域)。然而，在發光區A中，電極145將遮住部分發光層130所產生的光，而造成發光二極體100的光輸出強度降低。
圖2為一種習知覆晶式(flip chip)封裝之發光二極體 200的剖面示意圖。發光二極體200包含一透明基板210、N型半導體層220、發光層230、P型半導體層225、以及電極240及245，其中電極240及245分別接觸N型半導體層220及P型半導體層225。發光二極體200利用錫料(solder)270直接與封裝基材260上的導電區250及255連接，而不需要黏晶(Die Bonding)與金屬拉線(Wire Bonding)等過程。
參考圖2，在發光區A中，由於覆晶式發光二極體200之發光在向上輸出時，不會受到電極245的遮擋，因此相較於圖1之焊線式發光二極體100，覆晶式發光二極體200具有較佳的發光特性。然而，覆晶式發光二極體200仍存在一非發光區B，一般而言，非發光區B約佔整個晶粒大小的百分之二十到百分之三十，因此仍將限制發光二極體光輸出強度之提升。
因此，有必要提供一種可更進一步改善發光二極體的發光亮度之結構與方法。
鑑於先前技術所存在的問題，本發明提供了一種可提高光輸出強度之發光二極體及其製造方法。
本發明之一方面在於提供一種發光二極體，其包含一基板、一第一半導體層、一發光層、一第二半導體層、複數個介層孔、一第一金屬層、一第二金屬層、及一圖案化 鈍化層，其中基板包含一第一區及一第二區。第一半導體層於基板上、發光層於第一半導體層上、且第二半導體層於發光層上。複數個介層孔於第一區之上，且貫穿第二半導體層及發光層而暴露部分之第一半導體層。第一金屬層於第一區之上，且透過複數個介層孔而與第一半導體層電性接觸。第二金屬層於第二區之上，其與第二半導體層電性接觸且與第一金屬層電性絕緣。圖案化鈍化層夾設於第二半導體層與第一金屬層之間，用以使第一金屬層分別與第二半導體層與發光層電性隔離。
本發明之另一方面在於提供一種發光二極體，其包含一基板、一第一半導體層、一發光層、一第二半導體層、複數個介層孔、一圖案化鈍化層、一第一金屬層、及一第二金屬層，其中基板包含一第一區及一第二區。第一半導體層於基板上、發光層於第一半導體層上、且第二半導體層於發光層上。複數個介層孔於第一區之上，且貫穿第二半導體層及發光層而暴露部分之第一半導體層。圖案化鈍化層於第二半導體層之上，其於第一區之上覆蓋所有之第二金屬層與發光層，且於第二區之上覆蓋部分之第二半導體層。第一金屬層於第一區之上，且透過複數個介層孔而與第一半導體層電性接觸。第二金屬層於第二區之上，與第二半導體層電性接觸且與第一金屬層電性絕緣。
本發明之又一方面在於提供一種形成發光二極體之方法，其包含以下步驟：提供一基板，其包含一第一區及一第二區；形成一第一半導體層於基板上；形成一發光層 於第一半導體層上；形成一第二半導體層於發光層上；形成複數個介層孔於第一區之上，複數個介層孔貫穿第二半導體層及發光層而暴露部分之第一半導體層；形成一圖案化鈍化層於第二半導體層之上，其中圖案化鈍化層於第一區之上覆蓋所有之第二金屬層與發光層，且於第二區之上覆蓋部分之第二半導體層；形成一第一金屬層於第一區之上，使第一金屬層透過複數個介層孔而與第一半導體層電性接觸；以及形成一第二金屬層於第二區之上，使第二金屬層與第二半導體層電性接觸且與第一金屬層電性絕緣。
本發明之其他方面，部分將在後續說明中陳述，而部分可由說明中輕易得知，或可由本發明之實施而得知。本發明之各方面將可利用後附之申請專利範圍中所特別指出之元件及組合而理解並達成。需了解，先述的一般說明及下列詳細說明均僅作舉例之用，並非用以限制本發明。
本發明揭露一種發光二極體及其形成方法，用以提高發光二極體的發光效率。為了使本發明之敘述更加詳盡與完備，可參照下列描述並配合圖3A至圖4B之圖式。然以下實施例中所述之裝置、元件及方法步驟，僅用以說明本發明，並非用以限制本發明的範圍。應注意，為清楚呈現本發明，所附圖式中之各元件並非按照實物之比例繪製，而且為避免模糊本發明之內容，以下說明亦省略習知之零組件、相關材料、及其相關處理技術。
於本發明之方法中建立在基材上之各層物質，可以經由熟習此項技藝者所熟知的方法來執行，例如沉積法(deposition)，化學氣相沉積法(chemical vapor deposition)或原子層沉積法(atomic layer deposition(ALD))。
圖3A至圖3E揭示根據本發明方法以製造一發光二極體的流程剖面圖。參考圖3A，在本發明之一實施例中，提供一基板310，其包含一第一區I及一第二區II。接著在基板310上形成第一半導體層320、發光層330、及第二半導體層325，其中半導體層320與325為不同摻雜型。在一實施例中，第一半導體層320為N型半導體層，第二半導體層325為P型半導體層。
一般來說，基板310可例如為玻璃基板、藍寶石基板、SiC基板、磷化鎵(GaP)基板、磷化砷鎵(GaAsP)基板、硒化鋅(ZnSe)基板、硫化鋅(ZnS)基板、或硫硒化鋅(ZnSSe)基板。發光層330可為磷化鋁鎵銦(AlGaInP)、氮化銦鎵(InGaN)或砷化鋁鎵(AlGaAs)之其中之一，而其結構可以是採用傳統的同質結構(Homostructure)、單異質結構(Single Heterostructure)、雙異質結構(Double Heterostructure(DH))、或是多重量子井(Multiple Quantum Well(MQW))。
接著，如圖3B所示，利用微影蝕刻技術將部分的第二半導體層325及發光層330除去，以在第一區I上方形成複數個暴露出第一半導體層320的介層孔335。蝕刻第 二半導體層325及發光層330的方法可例如為反應性離子蝕刻(RIE)等乾式蝕刻法，然不在此限。一般來說，介層孔335的直徑為約3 μm至約10 μm。
然後，參考圖3C，在基板310上形成一圖案化鈍化層380，其在第一區I上覆蓋全部的第二半導體層325及發光層330，並在第二區II上覆蓋部分的第二半導體層325。需注意的是，在第一區I上，複數個介層孔335仍暴露出第一半導體層320。圖案化鈍化層380之材質包含氧化鋁(Al2 O3 )、二氧化矽(SiO2 )、氮化矽(SiNx )、旋塗玻璃、矽樹脂、BCB樹脂、環氧樹脂、聚亞醯胺、或上述之組合。圖案化鈍化層380的形成方法包含使用傳統的微影、蝕刻等製程。舉例來說，先以習知的半導體沉積方法，全面性地沉積一鈍化層，接著塗佈一光阻層於此鈍化層上，再利用曝光顯影等圖案轉移技術圖案化光阻層而定義出所欲暴露之第一及第二半導體層320、325的位置，再以此圖案化光阻層為罩幕，蝕刻鈍化層而得到圖3C所示結構。
接著，參考圖3D，於第一區I及第二區II上分別形成延伸接點390及392，其分別接觸第一半導體層320及第二半導體層325，用以延伸擴大對外的接觸面積。接著，分別形成內導電凸塊394及396於延伸接點390及392上，延伸接點390、392之材料可為任何導電性良好之金屬。接著，形成保護層385於基板310之上，以覆蓋圖案化鈍化層380、延伸接點390、392及內導電凸塊394、396，其中保護層385之材料可為環氧樹脂、聚亞醯胺、苯并環 丁烷、液晶高分子、或任何其他合適之介電材料。需注意的是，內導電凸塊394及396的上表面仍暴露在外。舉例來說，可先以習知的半導體沉積方法沉積保護層385以全面覆蓋基板310上所有元件，接著再以例如化學機械研磨(CMP)等平坦化製程，蝕刻保護層385的表面至暴露出內導電凸塊394及396的上表面。
繼續參考圖3D，外導電凸塊340及342分別形成於內導電凸塊394及396上方。外導電凸塊340及342係用以電性連接至封裝基材上。內導電凸塊394及396及外導電凸塊340及342可為金屬顆粒與高分子化合物之複合材料所組成。外導電凸塊340及342可再分別覆蓋表面金屬層344及346，表面金屬層344及346之材料可為鎳、金、或其組合，或任何其他可用以幫助與其他裝置電性接合的材料。
接著，參考圖3E，將圖3D中的結構反轉，再藉由接合物(如錫鉛凸塊(solder bump))將外導電凸塊340及342分別與基座360上的導電區域350及352接合，即得到圖3E中的覆晶型發光二極體結構。外導電凸塊340及342與基座360的接合方式為習知的覆晶接合方式，故不贅述。
圖4A及4B為根據本發明一實施例所繪示之在不同製程階段的發光二極體之立體示意圖。參考圖4A，在基板410上依序形成N型半導體層420、發光層(圖未示)、P型半導體層425、及鈍化層480，其中部分的N型半導體 層420及部份的P型半導體層425係暴露於基板410上的不同區域，如圖3C－3E所示。接著，形成分別接觸N型半導體層420及P型半導體層425的延伸接點490及492，以及分別接觸延伸接點490及492的內導電凸塊494及496。
接著，參考圖4B，形成保護層485於基板410之上，其覆蓋鈍化層480及延伸接點490及492，並環繞內導電凸塊494及496。然後，分別形成外導電凸塊440及442於內導電凸塊494及496上方，其可分別電性連接至N型半導體層420及P型半導體層425。最後，可將圖4B中的結構反轉，再以習知覆晶接合方式形成一覆晶型發光二極體結構，如前所述。
相較於習知的發光二極體結構(如圖2所示結構)，本發明所提供之覆晶式發光二極體結構藉由形成複數個微小的介層孔至N型半導體層，而能夠在保留了絕大部分發光層的情況下達成與N型半導體層的電性接觸。因此，本發明之發光二極體結構並不具有一非發光區，因而可大幅提升發光二極體的光輸出強度。
以上所述僅為本發明之較佳實施例而已，並非用以限定本發明之申請專利範圍；凡其它未脫離本發明所揭示之精神下所完成之等效改變或修飾，均應包含在下述之申請專利範圍內。
100‧‧‧發光二極體
110‧‧‧基板
120‧‧‧N型半導體層
125‧‧‧P型半導體層
130‧‧‧發光層
140、145‧‧‧電極
150、155‧‧‧導電區
160‧‧‧封裝基材
200‧‧‧發光二極體
210‧‧‧基板
220‧‧‧N型半導體層
225‧‧‧P型半導體層
230‧‧‧發光層
240、245‧‧‧電極
250、255‧‧‧導電區
260‧‧‧封裝基材
270‧‧‧錫料
310‧‧‧基板
320‧‧‧第一半導體層
325‧‧‧第二半導體層
330‧‧‧發光層
335‧‧‧介層孔
340、342‧‧‧外導電凸塊
344、346‧‧‧表面金屬層
350、352‧‧‧導電區域
360‧‧‧基座
380‧‧‧圖案化鈍化層
385‧‧‧保護層
390、392‧‧‧延伸接點
394、396‧‧‧內導電凸塊
410‧‧‧基板
420‧‧‧N型半導體層
425‧‧‧P型半導體層
440、442‧‧‧外導電凸塊
480‧‧‧鈍化層
485‧‧‧保護層
490‧‧‧延伸接點
492‧‧‧延伸接點
494、496‧‧‧內導電凸塊
圖1為一種習知焊線式封裝之發光二極體的剖面示意圖；圖2為一種習知覆晶式封裝之發光二極體的剖面示意圖；圖3A至圖3E揭示根據本發明方法以製造一發光二極體的流程剖面圖；以及圖4A及4B為根據本發明一實施例所繪示之在不同製程階段的發光二極體之立體示意圖。
310‧‧‧基板
320‧‧‧第一半導體層
325‧‧‧第二半導體層
330‧‧‧發光層
340、342‧‧‧外導電凸塊
344、346‧‧‧表面金屬層
350、352‧‧‧導電區域
360‧‧‧基座
380‧‧‧圖案化鈍化層
390、392‧‧‧延伸接點
394、396‧‧‧內導電凸塊

Claims (8)

  1. 一種發光二極體(Light Emitting Diode)，包含：一基板，包含一第一區及一第二區；一第一半導體層於該基板上；一發光層於該第一半導體層上；一第二半導體層於該發光層上；複數個介層孔於該第一區之上，該複數個介層孔貫穿該第二半導體層及該發光層而暴露部分之該第一半導體層；一第一延伸接點於該第一區之上，透過該複數個介層孔而與該第一半導體層電性接觸；以及一第二延伸接點於該第二區之上，與該第二半導體層電性接觸且與該第一延伸接點電性絕緣；以及一保護層位在該第一區及該第二區上覆蓋該第一延伸接點及該第二延伸接點；僅單一個第一外導電凸塊位在該第一區的該保護層上並且透過位在該第一延伸接點上且貫穿該保護層的僅單一個第一內導電凸塊電性接觸該第一延伸接點，其中該僅單一個第一外導電凸塊透過所有該複數個介層孔及該僅單一個第一內導電凸塊電性連接至該第一半導體層。
  2. 如請求項1所述之發光二極體，其中一圖案化鈍化層夾設於該第二半導體層與該第一延伸接點之間，用以使該第一延伸接點分別與該第二半導體層與該發光層 電性隔離，其中位在該複數個介層孔之間的該第二半導體並未被該第二延伸接點所覆蓋。
  3. 如請求項1所述之發光二極體，其中該圖案化鈍化層之材質包含氧化鋁(Al2O3)、二氧化矽(SiO2)、氮化矽(SiNx)、旋塗玻璃、矽樹脂、BCB樹脂、環氧樹脂、聚亞醯胺、或上述之組合。
  4. 如請求項1所述之發光二極體，其中每一該複數個介層孔具有約3μm至約10μm的一直徑。
  5. 如請求項1所述之發光二極體，其中一部分之該保護層使該第一延伸接點與該第二延伸接點電性隔離。
  6. 如請求項5所述之發光二極體，其中該保護層用以電性隔離該第一延伸接點與該第二延伸接點的該部份係接觸該圖案化鈍化層。
  7. 如請求項1所述之發光二極體，其中該基板為一透明基板，且其材質包含藍寶石(Sapphire)、玻璃、磷化鎵(GaP)、碳化矽(SiC)、磷化砷鎵(GaAsP)、硒化鋅(ZnSe)、硫化鋅(ZnS)、或硫硒化鋅(ZnSSe)。
  8. 如請求項1所述之發光二極體，其中該第一半導體層為一N型摻雜半導體層，且該第二半導體層為一P型 摻雜半導體層。
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