TWI508242B - 帶有貫穿模具第一層級互連體之三維積體電路封裝 - Google Patents

帶有貫穿模具第一層級互連體之三維積體電路封裝 Download PDF

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TWI508242B
TWI508242B TW101145639A TW101145639A TWI508242B TW I508242 B TWI508242 B TW I508242B TW 101145639 A TW101145639 A TW 101145639A TW 101145639 A TW101145639 A TW 101145639A TW I508242 B TWI508242 B TW I508242B
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Taiwan
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semiconductor die
substrate
die
active side
package
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TW101145639A
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English (en)
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TW201342549A (zh
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Debendra Mallik
Robert L Sankman
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Intel Corp
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Description

帶有貫穿模具第一層級互連體之三維積體電路封裝 技術領域
本發明之實施例係在封裝且，特別地，帶有貫穿模具第一層級互連體之三維積體電路封裝及用以形成該等封裝之方法的領域中。
 背景
目前消費電子市場經常要求需要非常複雜電路之複雜功能。比例越做越小之基本構成塊，例如電晶體，已可以各連續產生之方式加入更加複雜之電路在一單一晶粒上。半導體封裝被用以保護一積體電路(IC)晶片或晶粒，且亦提供該晶粒一到達外部電路之電氣介面。隨著更小電子裝置之需求不斷增加，半導體封裝係設計成更為緊緻且必須支持更大之電路密度。此外，需要更高效能裝置導致需要一改良半導體封裝，且該改良半導體封裝可具有一配合後續組裝加工之薄封裝輪廓及低整體翹曲。
多年來，C4焊料球連接體已被用來在半導體裝置與基材之間提供倒裝晶片互連體。一倒裝晶片或控制崩潰晶片連接體(C4)是一種用於例如使用焊料凸塊而不是線 結合之積體電路(IC)晶片、MEMS或組件之半導體裝置的安裝件。該等焊料凸塊被沈積在該等C4墊上，且設置在該基材封裝之頂側。為了將該半導體裝置安裝在該基材上，它被倒置一該作用側向下面向該安裝區域。該等焊料凸塊被用來直接連接該半導體裝置與該基材。但是，這方法會受限於安裝區域之尺寸且會無法輕易地配合堆疊晶粒。
因此，半球形C4焊料凸塊形成在一絕緣層上方且在連接墊之暴露表面上方(亦被稱為凸塊墊)，且各連接墊之暴露表面係透過在該絕緣層或該等絕緣層中之一通孔暴露。接著，將該等焊料凸塊加熱至它們的熔點以上直到它們重熔流布且形成一與該晶粒之Cu柱凸塊的連接體。該等真正C4焊料凸塊可使用多數不同加工技術製造，包括蒸發、網版印刷及電鍍。藉電鍍製造需要一連串基本操作，且該等基本操作通常包括沈積一金屬晶種層、施加一成像光阻(具有C4焊料凸塊之圖案)、電鍍焊料、剝離該光阻及次蝕刻該金屬晶種層以隔離該等C4凸塊。
另一方面，習知線結合方法會限制可合理地包括在一單一半導體封裝中之半導體晶粒之數目。此外，當試圖封裝大量半導體晶粒在一半導體封裝中時產生一般之結構問題。因此，在半導體封裝之發展中需要另外之改良。
 概要
本發明之實施例包括帶有貫穿模具第一層級互連體之三維積體電路封裝及用以形成該等封裝之方法。
在一實施例中，一種半導體封裝包括一基材。一底半導體晶粒具有一作用側，且該作用側具有一表面積。該底半導體晶粒係與該基材耦合且該作用側遠離該基材。一頂半導體晶粒具有一作用側，且該作用側具有一比該底半導體晶粒之表面積大之表面積。該頂半導體晶粒係與該基材耦合且該作用側靠近該基材。該底半導體晶粒之作用側係面向且導電地耦合於該頂半導體晶粒之作用側。該頂半導體晶粒係藉多數繞過該底半導體晶粒之第一層級互連體導電地耦合於該基材。
在另一實施例中，一種製造一半導體封裝之方法包括結合多數單粒化第一晶粒之各第一晶粒之一作用側與在多數第二晶粒之一晶圓上之一第二晶粒之各作用側以形成晶圓層級第一與第二晶粒對。在該晶圓層級上該等第一與第二晶粒對上方形成一模製層。由該模製層側，研磨該晶圓以暴露各第一晶粒及各第二晶粒之互連凸塊。使該等第一與第二晶粒對單粒化。接著將獨立第一與第二晶粒對封裝在各個封裝基材上。
在另一實施例中，一種半導體晶粒對包括一第一半導體晶粒，且該第一半導體晶粒具有一作用側，並且該作用側具有一表面積。該第一半導體晶粒不包括矽通孔(TSV)。一第二半導體晶粒具有一作用側，且該作用側具有一比該第一半導體晶粒之表面積大之表面積。該第一半導體晶粒之作用側面向且導電地耦合於該第二半導體晶粒之作用側。該第二半導體晶粒包括多數互連體，且該等互連 體繞過且鄰近該第一半導體晶粒。
100‧‧‧半導體封裝
102‧‧‧基材
104‧‧‧底半導體晶粒
106‧‧‧作用側
108‧‧‧頂半導體晶粒
110‧‧‧作用側
112‧‧‧晶粒互連結構
114‧‧‧第一層級互連體
116‧‧‧模製層
118‧‧‧底部填充材料層
120‧‧‧凸塊
200‧‧‧半導體封裝
202‧‧‧基材
204‧‧‧底半導體晶粒
206‧‧‧作用側
208‧‧‧頂半導體晶粒
210‧‧‧作用側
212‧‧‧晶粒互連結構
214‧‧‧第一層級互連體
216‧‧‧模製層
218‧‧‧底部填充材料層
220‧‧‧凸塊
222‧‧‧焊料球
300‧‧‧半導體封裝
302‧‧‧基材
304‧‧‧底半導體晶粒
306‧‧‧作用側
308‧‧‧頂半導體晶粒
310‧‧‧作用側
312‧‧‧晶粒互連結構
314‧‧‧第一層級互連體
316‧‧‧模製層
318‧‧‧底部填充材料層
320‧‧‧凸塊
322‧‧‧焊料球
400‧‧‧半導體封裝
402‧‧‧基材
404‧‧‧底半導體晶粒
406‧‧‧作用側
408‧‧‧頂半導體晶粒
410‧‧‧作用側
412‧‧‧晶粒互連結構
414‧‧‧第一層級互連體
416‧‧‧模製層
418‧‧‧底部填充材料層
420‧‧‧凸塊柱
422‧‧‧中間焊料球
500‧‧‧晶圓
502‧‧‧底晶粒
504‧‧‧頂晶粒
504'‧‧‧薄化頂晶粒
506‧‧‧模製層
508‧‧‧FLI凸塊
510‧‧‧獨立晶粒對；單粒化結構
600‧‧‧電腦系統；電子系統
610‧‧‧積體電路
611‧‧‧積體電路
612‧‧‧處理器
613‧‧‧雙處理器
614‧‧‧通訊電路
615‧‧‧雙通訊電路
616‧‧‧晶粒上記憶體
617‧‧‧晶粒上記憶體
620‧‧‧系統匯流排
630‧‧‧電壓源
640‧‧‧外部記憶體
642‧‧‧主記憶體
644‧‧‧硬碟
646‧‧‧可移除媒體
648‧‧‧埋入式記憶體
650‧‧‧顯示裝置
660‧‧‧音訊輸出
670‧‧‧輸入裝置；控制器
圖式簡單說明
圖1顯示依據本發明一實施例之一帶有貫穿模具第一層級互連體之三維積體電路封裝的橫截面圖。
圖2顯示依據本發明一實施例之一帶有貫穿模具第一層級互連體之三維積體電路封裝的橫截面圖。
圖3顯示依據本發明一實施例之一帶有貫穿模具第一層級互連體之三維積體電路封裝的橫截面圖。
圖4顯示依據本發明一實施例之一帶有貫穿模具第一層級互連體之三維積體電路封裝的橫截面圖。
圖5A顯示一俯視圖及一橫截面圖，其顯示在依據本發明一實施例之製造一半導體封裝之方法中，包括提供一進入頂晶粒晶圓之一操作。
圖5B顯示一俯視圖及一橫截面圖，其顯示在依據本發明一實施例之製造一半導體封裝之方法中，包括一底晶粒結合晶粒附接(BDA)程序之一操作。
圖5C顯示一俯視圖及一橫截面圖，其顯示在依據本發明一實施例之製造一半導體封裝之方法中，包括在該晶圓層級形成一模製層之一操作。
圖5D顯示一俯視圖及一橫截面圖，其顯示在依據本發明一實施例之製造一半導體封裝之方法中，包括一晶圓前側研磨以暴露一底晶粒及FLI凸塊之一操作。
圖5E顯示一俯視圖及一橫截面圖，其顯示在依據 本發明一實施例之製造一半導體封裝之方法中，包括一晶圓後側研磨以提供一薄化晶圓及達到最終頂晶粒之一目標厚度之一操作。
圖5F顯示一橫截面圖，其顯示在依據本發明一實施例之製造一半導體封裝之方法中，包括切割以提供獨立與底晶粒對之一操作。
圖6是依據本發明一實施例之一電腦系統之示意圖。
 詳細說明
以下說明帶有貫穿模具第一層級互連體之三維積體電路封裝及用以形成該等封裝之方法。在以下說明中，提出多數特定細節，例如封裝架構及材料狀態，以便透徹了解本發明之實施例。所屬技術領域中具有通常知識者應了解的是本發明之實施例可在沒有這些特定細節之情形下實施。在其他情形中，未詳細說明例如積體電路設計布置之習知特徵，以免使本發明之實施例不必要地不清楚。此外，應了解的是在圖中所示之各種實施例是說明性代表且不一定依比例繪製。
本發明之一或多個實施例係以三維(3D)積體電路(IC)半導體封裝作為標的。在一實施例中，該封裝係利用貫穿模具第一層級互連體(FLI)。在此所述之實施例可包括，但不一定限於使用3D堆疊晶粒、面對面3D堆疊、貫穿模具FLI及在一中央處理單元(CPU)上之3D堆疊晶粒。多數 實施例在此可以一大約等於或大於10奈米節點程序作為標的。在一或多個實施例中，在不使用矽通孔(TSV)或線結合之情形下堆疊兩或兩個以上之晶粒。一TSV方法是一貫穿方法，而一線結合方法是一繞過方法。在此所述之一或多個實施例的特徵可在於一混合貫穿及繞過方法。在一實施例中，一或多個較小晶粒係與一較大晶粒面對面地封裝。
習知3D堆疊IC架構通常需要貫穿至少一作用晶粒之TSV。至少部份地由於伴隨產生該等TSV本身之成本，貫穿作用晶粒之TSV是昂貴的。此外，昂貴之晶粒面積會被該TSV加上該TSV排除區用完。因此，至少某些實施例在此對3D封裝提供一無TSV方法。
在於此以一概觀形式及在以下更詳細地說明之一特定實施例中，一3D IC係在不需要在任一裝置上TSV之情形下，藉面對面(FtF)堆疊兩作用裝置，例如，一頂作用晶粒及一底作用晶粒形成。該頂晶粒比該底晶粒大。該頂晶粒包括多數環繞該底晶粒之高銅凸塊以便對一封裝基材提供第一層級互連體(FLI)。該等FLI凸塊被埋在一模製化合物內以輕易進行組裝程序及保護結構。該底晶粒係透過在該頂晶粒上之互連線直接與該封裝基材電連接(例如，用以傳送電力等)。
在此所述及有關於一或多個實施例之特徵包括，但不限於，(a)一沒有TSV之3D IC封裝結構(例如，藉在一頂作用晶粒上使用一矮與高凸塊之混合以便透過矮凸塊與一底作用晶粒連接且透過高凸塊與該封裝基材連接， (b)埋在一模製化合物中之高凸塊(例如，實施該模製係在最後FLI底部填充之前，在一晶圓層級上實行)，(c)貫穿該模製化合物之FLI凸塊係藉由研磨或雷射開孔，或其組合露出，(d)一底作用晶粒之最後薄化係藉研磨一堆疊晶粒晶圓之一模製前側達成(例如，可產生非常薄底晶粒，例如在10至20微米之範圍內，及(e)(a)至(d)之互換及組合。
在此說明數個特定實施例以顯示相關之通用之觀念。例如，圖1至4顯示依據本發明實施例之各種帶有貫穿模具第一層級互連體之三維積體電路封裝的橫截面圖。
在一第一例中，請參閱圖1，一半導體封裝100包括一基材102。一底半導體晶粒104具有一作用側106，且該作用側106具有一表面積。該底半導體晶粒104係與該基材102耦合，且該作用側106遠離該基材102。一頂半導體晶粒108具有一作用側110，且該作用側110具有一比該底半導體晶粒104之表面積大之表面積。該頂半導體晶粒108係與該基材102耦合，且該作用側110靠近該基材102。該底半導體晶粒104之作用側106係面向且藉(例如，由來自各晶粒之焊料凸塊構成之)晶粒對晶粒互連結構112導電地耦合於該頂半導體晶粒108之作用側110。該頂半導體晶粒108係藉多數繞過該底半導體晶粒104之第一層級互連體114導電地耦合於該基材102。該頂半導體晶粒108更藉多數凸塊120(例如，高銅凸塊)導電地耦合於該基材102，且該等凸塊120係由該頂半導體晶粒108之作用側110延伸且鄰近該底半導體晶粒104。該等多數凸塊120係與該等第一層級互連體114耦 合。在一實施例中，該底半導體晶粒104及該等多數凸塊120被收容在一模製層116中，如圖1所示。在一實施例中，該頂半導體晶粒108及該底半導體晶粒104係更藉一底部填充材料層118耦合於該基材102，亦如圖1所示。
在一實施例中，該頂半導體晶粒108係組配成提供電力至該底半導體晶粒104。在一實施例中，該頂半導體晶粒108係組配成有助於，例如，透過在該基材108中之路由，在該底半導體晶粒104與該基材104之間的通訊。在一實施例中，該底半導體晶粒104沒有矽通孔(TSV)。因此，在該底半導體晶粒104與基材102之間的連接係直接透過在該頂半導體晶粒108上之互連線及該等FLI凸塊114達成。但是，應了解的是，在另一實施例中，可藉使用在該底晶粒上之TSV直接連接一底晶粒。
因此，請參閱圖1，就一具有貫穿模具FLI之3D IC而言，底與頂作用晶粒係面對面堆疊。不需要TSV得到該3D IC堆疊。FLI銅凸塊被埋在一模製層中。該頂與底晶粒具有一被該模製化合物底部填充之共用介面。懂得製造原理地，具有貫穿模具第一層級互連體(FLI)之最後3D IC堆疊晶粒係如伴隨圖5A至5F在以下更詳細說明地附接於一底部填充且已組裝之封裝基材。
該半導體晶粒104或108中之一者或兩者可由一半導體基材形成，例如，一單一結晶矽基材。亦可考慮其他材料，例如，但不限於III-V族材料及鍺或矽鍺材料基材。該半導體晶粒104或108之作用側(106或110，分別地)可以是 形成半導體裝置之側。在一實施例中，該半導體晶粒104或108之作用側106或110，分別地，包括多數半導體裝置，例如但不限於電晶體、電容器及電阻器，該等半導體裝置係藉一晶粒互連結構互連在一起成為多數功能電路以藉此形成一積體電路。如所屬技術領域中具有通常知識者所了解地，該半導體晶粒之裝置側包括一作用部份，且該作用部份具有積體電路及多數互連體。依據數個不同實施例，該半導體晶粒可以是任何適當積體電路裝置，包括但不限於微處理器(單核或多核)、一記憶裝置、一晶片組、一特殊應用積體電路。
堆疊半導體封裝100可特別適用於封裝具有一邏輯之一記憶體晶粒。例如，在一實施例中，晶粒104或108中之一晶粒是一記憶體晶粒。另一晶粒是一邏輯晶粒。在本發明之一實施例中，該記憶體晶粒是一記憶裝置，例如但不限於靜態隨機存取記憶體(SRAM)、一動態隨機存取記憶體(DRAM)，一非依電性記憶體(NVM)且該邏輯晶粒是一邏輯裝置，例如但不限於一微處理器及一數位信號處理器。
依據本發明之一實施例，一或多個晶粒互連結構112、多數凸塊120或第一層級互連體114係由一金屬凸塊陣列構成。在一實施例中，各金屬凸塊係由一例如，但不限於，銅、金或鎳之金屬構成。依據特定應用，基材102可為一可撓基材或一剛性基材。在一實施例中，基材102具有多數設置於其中之電氣線路。在一實施例中，亦形成一外接觸層。在一實施例中，該外接觸層包括一球格柵陣列 (BGA)。在其他實施例中，該外接觸層包括例如，但不限於，一基板格柵陣列(LGA)或一接腳柵格陣列(PGA)之一陣列。
對於模製層116，可使用數種選項來製造該層。在一實施例中，使用一FLI凸塊及底晶粒覆模方法。在一實施例中，接著研磨該覆模層以暴露該FLI凸塊。研磨係靠近該凸塊(例如，銅凸塊)進行且接著使用雷射剝蝕將該等銅凸塊開孔。然後，在該等銅凸塊上進行焊料糊印刷或微球附接。在一實施例中，該等銅凸塊之直接雷射開孔係在沒有任何研磨之情形下實施。可如上所述類似地實施一焊接操作。在另一實施例中，暴露凸塊及底晶粒模製且一聚合物薄膜在該FLI凸塊及底晶粒上方。凸塊暴露不是必要的；但是，需要藉電漿、雷射等清潔該FLI Cu凸塊。在另一實施例中，使用轉移或壓縮模具。在另一實施例中，毛細底部填充層形成物延伸覆蓋該等FLI凸塊而不是習知模製。該模製層116可由一非導電材料構成。在一實施例中，該模製層116係由例如但不限於，一塑膠或由二氧化矽填料構成之一環氧樹脂的一材料構成。對於底部填充材料層118，選項包括，在一實施例中，在FLI模製時該LMI介面之(例如該晶粒-晶粒介面之)模底部填充(MUF)、EF-TCB(熱壓縮結合)或在模製前底部填充。
在一第二例中，請參閱圖2，一半導體封裝200包括一基材202。一底半導體晶粒204具有一作用側206，且該作用側206具有一表面積。該底半導體晶粒204係與該基材202耦合，且該作用側206遠離該基材202。一頂半導體晶 粒208具有一作用側210，且該作用側210具有一比該底半導體晶粒204之表面積大之表面積。該頂半導體晶粒208係與該基材202耦合，且該作用側210靠近該基材202。該底半導體晶粒204之作用側206係面向且藉晶粒對晶粒互連結構212導電地耦合於該頂半導體晶粒208之作用側210。該頂半導體晶粒208係藉多數繞過該底半導體晶粒204之第一層級互連體214導電地耦合於該基材202。該頂半導體晶粒208更藉多數凸塊220導電地耦合於該基材202，且該等凸塊220係由該頂半導體晶粒208之作用側210延伸到多數焊料球222，且至少部份地鄰近該底半導體晶粒204。該等多數焊料球222係與該等第一層級互連體214耦合。在一實施例中，該底半導體晶粒204、該等多數凸塊220及該等多數焊料球222被收容在一模製層216中，如圖2所示。在一實施例中，該頂半導體晶粒208及該底半導體晶粒204係更藉一底部填充材料層218耦合於該基材202，亦如圖2所示。
因此，請參閱圖2，用於一具有貫穿模具FLI之3D IC的另一方法包括將焊料設置在一模製層內。該焊料可在模製前放置且接著藉研磨或雷射開孔暴露。或者，焊料糊可在雷射開孔穿過銅凸塊後放置。該封裝晶粒之特性與構形及封裝200之材料可與用於封裝100之上述者相同或類似。在一實施例中，該等焊料球222係由鉛構成或無鉛，例如金與錫焊料或銀與錫焊料之合金。
請參閱圖1與2，混合FLI凸塊高度可供一頂半導體晶粒使用。例如，在一實施例中，一混合FLI凸塊高度係 藉使用一頂帽型或細長型銅柱凸起程序產生。在此，該第一凸起罩及電鍍操作為FLI與LMI都提供矮凸塊高度。該第二凸起罩及電鍍操作只提供FLI作為較高者。應了解的是可為FLI進行銅與焊料凸起之各種組合，如圖1與2所示。
在一第三例中，請參閱圖3，一半導體封裝300包括一基材302。一底半導體晶粒304具有一作用側306，且該作用側306具有一表面積。該底半導體晶粒304係與該基材302耦合，且該作用側306遠離該基材302。一頂半導體晶粒308具有一作用側310，且該作用側310具有一比該底半導體晶粒304之表面積大之表面積。該頂半導體晶粒308係與該基材302耦合，且該作用側310靠近該基材302。該底半導體晶粒304之作用側306係面向且藉晶粒對晶粒互連結構312導電地耦合於該頂半導體晶粒308之作用側310。該頂半導體晶粒308係藉多數繞過該底半導體晶粒304之第一層級互連體314導電地耦合於該基材302。該頂半導體晶粒308更藉多數凸塊320導電地耦合於該基材302(例如，矮凸塊)，且該等凸塊320係由該頂半導體晶粒308之作用側310延伸，但未鄰近該底半導體晶粒304，且到達多數焊料球322。該等多數焊料球322係與該等第一層級互連體314耦合。在一實施例中，該底半導體晶粒304、該等多數凸塊320及該等多數焊料球322被收容在一模製層316中，如圖3所示。在一實施例中，該頂半導體晶粒308及該底半導體晶粒304係更藉一底部填充材料層318耦合於該基材302，亦如圖3所示。
因此，請參閱圖3，用於一具有貫穿模具FLI之 3D IC的另一方法包括製造具有相同高度之頂晶粒FLI與LMI銅凸塊。該焊料可在模製前放置且接著藉研磨或雷射開孔暴露。或者，焊料糊可在雷射開孔該等銅凸塊後放置。該封裝晶粒之特性與構形及封裝300之材料可與用於封裝100或200之上述者相同或類似。
在一第四例中，請參閱圖4，一半導體封裝400包括一基材402。一底半導體晶粒404具有一作用側406，且該作用側406具有一表面積。該底半導體晶粒404係與該基材402耦合，且該作用側406遠離該基材402。一頂半導體晶粒408具有一作用側410，且該作用側410具有一比該底半導體晶粒404之表面積大之表面積。該頂半導體晶粒408係與該基材402耦合，且該作用側410靠近該基材402。該底半導體晶粒404之作用側406係面向且藉晶粒對晶粒互連結構412導電地耦合於該頂半導體晶粒408之作用側410。該頂半導體晶粒408係藉多數繞過該底半導體晶粒404之第一層級互連體414導電地耦合於該基材402。該頂半導體晶粒408更藉多數凸塊柱420導電地耦合於該基材402，且該等凸塊柱420係由該頂半導體晶粒408之作用側410延伸且鄰近該底半導體晶粒404。該等多數凸塊柱420包括多數中間焊料球422。該等多數凸塊柱420係與該等第一層級互連體414耦合。在一實施例中，該底半導體晶粒404及該等多數凸塊柱420被收容在一模製層416中，如圖4所示。在一實施例中，該頂半導體晶粒408及該底半導體晶粒404係更藉一底部填充材料層418耦合於該基材402，亦如圖4所示。
因此，請參閱圖4，用於一具有貫穿模具FLI之3D IC的另一方法包括製造具有相同高度之頂晶粒FLI與LMI銅凸塊。銅凸塊被電鍍在焊料上方。間層介電(ILD)應力遷移可利用該焊料定位達成。該封裝晶粒之特性與構形及封裝400之材料可與用於封裝100、200或300之上述者相同或類似。
在另一方面，在此提供用以製造帶有貫穿模具第一層級互連體之三維積體電路封裝之方法。例如，圖5A至5F顯示俯視圖及橫截面圖，其顯示在依據本發明一實施例之製造一半導體封裝之一方法中之各種操作。
請參閱圖5A，設置一進入之頂晶粒晶圓500。該頂晶粒晶圓可具有全厚度(例如，不必薄化)且可藉一雷射切割程序切割。一橫截面係沿a-a'軸顯示。接著可實施一底晶粒502結合晶粒附接(BDA)程序以將各個底晶粒附接在晶圓層級頂晶粒504上，如圖5B所示。一橫截面係沿b-b'軸顯示。該晶圓層級結合可藉CAM或熱壓縮結合(TCB)達成。
請參閱圖5C，在圖5B所示之結構上方，在該晶圓層級形成一模製層506。一橫截面係沿c-c'軸顯示。在一實施例中，該模製層506係形成在FLI凸塊及一底晶粒上方，且如果一底/頂晶粒介面未預底部填充，則提供底部填充)。應了解的是亦可在晶粒模製時暴露該底晶粒502。接著研磨該晶圓500前側以暴露該底晶粒502及FLI凸塊508，如圖5D所示。一橫截面係沿d-d'軸顯示。
請參閱圖5E，該晶圓500進行一背側研磨以提供 一薄化晶圓500且達到該最終頂晶粒之一目標厚度。該程序可類似於習知晶圓薄化。一橫截面係沿e-e'軸顯示。接著，切割該薄化晶圓500以提供多數獨立晶粒對510，如圖5F所示。如果如參照圖5A所述地實施一雷射切割，則圖5E之背側研磨可為使該等頂與底晶粒對真正單粒化之操作。應了解的是可使用用於頂晶粒切割道定位之凸塊領域或底晶粒邊緣。該單粒化結構510包括該附接底晶粒502、該薄化頂晶粒504'、該模製層506及該等FLI凸塊508。應了解的是，在最後組裝時，相對於一收納基材，該頂晶粒504'將真正在該底晶粒502之頂部上。
在一實施例中，焊料選項包括在一模製層內不形成焊料(例如，只在該模製層內形成多數銅凸塊)。在另一實施例中，焊料選項包括在模製前形成放在FLI銅凸塊上之焊料球或電鍍焊料及藉研磨一模製層及/或雷射開孔該焊料而暴露。在另一實施例中，焊料選項包括提供在研磨及/或雷射開孔以露出該等FLI銅凸塊後放置之焊料糊或微球。
在一實施例中，配合圖5A-5F所示之程序流程包括有助於使用一薄如10至20微米之薄晶粒且可在一CPU晶粒上製造兩不同凸塊高度。在一實施例中，該程序流程，或其變形，可用於三維堆疊在一CPU各種其他主動裝置上，例如在各種CPU核心上之小記憶體晶粒、無線晶片或小類比裝置。在一實施例中，因為在頂晶粒切割時產生之晶圓層級模製之不同邊緣輪廓，故所使用之模製化合物可與最後FLI底部填充區別。在一實施例中，該FLI凸塊係透 過研磨及/或雷射開孔露出以在該FLI凸塊上及四週留下一特定可偵測標記。
在另一方面，一或多個實施例在此係以一在封裝前製造之晶粒對作為標的。例如，在一實施例中，一半導體晶粒對包括一第一半導體晶粒，且該第一半導體晶粒具有一作用側，且該作用側具有一表面積。該第一半導體晶粒沒有矽通孔(TSV)。一第二半導體晶粒具有一比該第一半導體晶粒之表面積大之表面積。該第一半導體晶粒之作用側面向且導電地耦合於該第二半導體晶粒之作用側。該第二半導體晶粒包括多數繞過且鄰近該第一半導體晶粒之互連體。
在一實施例中，該第二半導體晶粒之互連體包括多數凸塊，且該等凸塊由該第二半導體晶粒之作用側延伸且鄰近該第一半導體晶粒。在一特定實施例中，該第一半導體晶粒及該等多數凸塊被收容在一模製層中。
在另一實施例中，該第二半導體晶粒之互連體包括多數凸塊，且該等凸塊由該第二半導體晶粒之作用側延伸且至少部份地鄰近該第一半導體晶粒，並且進一步到達多數焊料球。在一特定實施例中，該第一半導體晶粒、該等多數凸塊及該等多數焊料球被收容在一模製層中。
在另一實施例中，該第二半導體晶粒之互連體包括多數凸塊，且該等凸塊由該第二半導體晶粒之作用側延伸，但是未鄰近該第一半導體晶粒，且進一步到達多數焊料球。在一特定實施例中，該第一半導體晶粒、該等多數 凸塊及該等多數焊料球被收容在一模製層中。
在另一實施例中，該第二半導體晶粒之互連體包括多數凸塊柱，且該等凸塊柱由該第二半導體晶粒之作用側延伸且鄰近該第一半導體晶粒。該等多數凸塊柱係由多數中間焊料球構成。在一特定實施例中，該底半導體晶粒及該等多數凸塊柱被收容在一模製層中。
在一實施例中，該第二半導體晶粒係組配成提供電力至該第一半導體晶粒。
圖6是依據本發明一實施例之一電腦系統600之示意圖。如圖所示之電腦系統600(亦稱為電子系統600)可以一依據數個所揭露實施例中任一實施例及它們在這說明書中揭露之等效物的帶有貫穿模具第一層級互連體之三維積體電路封裝實施。該電腦系統600可為一行動裝置，如一筆記型電腦。該電腦系統600可為一行動裝置，例如一無線智慧型手機。該電腦系統600可為一桌上型電腦。該電腦系統600可為一手持式讀取器。
在一實施例中，該電子系統600是包括與該電腦系統600之各種組件電耦合之一系統匯流排620的一電腦系統。依據各種實施例，該系統匯流排620是一單一匯流排或之匯流排之任何組合。該電子系統600包括一提供電力至該積體電路610之電壓源630。在某些實施例中，該電壓源630係透過該系統匯流排620供應電流至該積體電路610。
依據一實施例，該積體電路610係與該系統匯流排620電耦合且包括任何電路，或任何電路之組合。在一實 施例中，該積體電路610包括一可以是任何種類之處理器612。如在此所使用者，該處理器612可表示任何種類之電路，例如但不限於，一微處理器、一微控制器、一圖形處理器、一數位信號處理器或另一處理器。在一實施例中，該處理器612是一在此所述之帶有貫穿模具第一層級互連體之三維積體電路封裝。在一實施例中，在該處理器之記憶體快取中具有SRAM實施例。可包括在該積體電路610中之其他種電路係一定制電路或一特殊應用積體電路(ASIC)，例如供無線裝置之一通訊電路614，且該無線裝置可舉例如：行動電路、智慧型手機、呼叫器、可攜式電腦、雙向無線電及類似電子系統。在一實施例，該處理器610包括晶粒上記憶體616，例如靜態隨機存取記憶體(SRAM)。在一實施例中，該處理器610包含埋入式晶粒上記憶體616，例如埋入式動態隨機存取記憶體(e-DRAM)。
在一實施例中，該積體電路610係以一後續積體電路611實施。可使用之實施例包括一雙處理器613、一雙通訊電路615及一例如SRAM之雙晶粒上記憶體617。在一實施例中，該雙積體電路610包括例如e-DRAM之埋入式晶粒上記憶體617。
在一實施例中，該電子系統600亦包括一外部記憶體640，且該外部記憶體640則可再包括一或多個適用於特殊應用之記憶體元件，例如一形式為RAM之主記憶體642；一或多個硬碟644；及/或一或多個處理可移除媒體646之磁碟機，例如軟碟機、光碟(CD)、數位多功能光碟 (DVD)、快閃記憶體磁碟機、及在所屬技術領域中習知之其他可移除媒體。該外部記憶體640亦可為埋入式記憶體648，例如在一依據一實施例之帶有貫穿模具第一層級互連體之三維積體電路封裝中之第一晶粒。
在一實施例中，該電子系統600亦包括一顯示裝置650、一音訊輸出660。在一實施例中，該電子系統600包括一輸入裝置，例如一輸入裝置670，且該輸入裝置670可為一鍵盤、滑鼠、軌跡球、遊戲控制器、麥克風、語音辨識裝置、或輸入該電子系統600之任何其他輸入裝置。在一實施例中，一輸入裝置670是一照相機。在一實施例中，一輸入裝置670是一數位錄音機。在一實施例中，一輸入裝置670是一照相機及一數位錄音機。
如在此所示，該積體電路610可以多數不同實施例實施，包括一依據數個揭露實施例之任一實施例及其等效之帶有貫穿模具第一層級互連體之三維積體電路封裝、一電子系統、一電腦系統、製造一積體電路之一或多種方法、及製造一電子總成之一或多種方法，且該電子總成包括依據在各種實施例中在此提出之數個揭露實施例之任一實施例及其所屬技術領域中習知之等效物之一帶有貫穿模具第一層級互連體之三維積體電路封裝。該等元件、材料、幾何形狀、尺寸及操作順序全部都可改變以配合特殊I/O耦合要求，包括用於依據數個揭露之帶有貫穿模具第一層級互連體之三維積體電路封裝實施例及其等效物之埋在一處理器安裝基材中之一微電子晶粒的陣列接觸數目、陣列接 觸構形。
因此，已揭露帶有貫穿模具第一層級互連體之三維積體電路封裝及用以形成該封裝之方法。在一實施例中，一半導體封裝包括一基材。一半導體晶粒具有一作用側，且該作用側具有一表面積。該底半導體晶粒係與該基材耦合且該作用側遠離該基材。一頂半導體晶粒具有一作用側，且該作用側具有一比該底半導體晶粒之表面積大之表面積。該頂半導體晶粒係與該基材耦合且該作用側靠近該基材。該底半導體晶粒之作用側係面向且導電地耦合於該頂半導體晶粒之作用側。該頂半導體晶粒係藉多數繞過該底半導體晶粒之第一層級互連體導電地耦合於該基材。在一實施例中，該底半導體晶粒沒有矽通孔(TSV)。
100‧‧‧半導體封裝
102‧‧‧基材
104‧‧‧底半導體晶粒
106‧‧‧作用側
108‧‧‧頂半導體晶粒
110‧‧‧作用側
112‧‧‧晶粒互連結構
114‧‧‧第一層級互連體
116‧‧‧模製層
118‧‧‧底部填充材料層
120‧‧‧凸塊

Claims (22)

  1. 一種半導體封裝體，包含：一基材；一底半導體晶粒，其具有帶有一表面積的一作用側及具有一底部側，該底半導體晶粒配置於基材之上且係以該作用側遠離該基材而與該基材分開；一頂半導體晶粒，其配置於該底半導體晶粒之上，且具有一作用側，且該作用側具有比該底半導體晶粒之表面積大的一表面積，該頂半導體晶粒係以靠近該基材的該作用側耦合至該基材，其中該底半導體晶粒之該作用側係面向且導電地耦合於該頂半導體晶粒之該作用側，且其中該頂半導體晶粒係藉導電結構來導電地耦合於該基材，而該導電結構繞過該底半導體晶粒之該底部側；一模製層，其收納該等導電結構及收納該底半導體晶粒，其中該模製層與該底半導體晶粒之該底部側及與該等導電結構共平面，其中該等導電結構包含多個凸塊，其自該頂半導體晶粒之該作用側延伸至與該底半導體晶粒的該底部側共平面之一水平，該等多數凸塊耦合於耦接至該基材之多個焊料球。
  2. 如申請專利範圍第1項之半導體封裝體，其中該頂半導體晶粒及該底半導體晶粒係更藉一底部填充材料層耦合至該基材，該底部填充材料層配置於該模製層及該基 材間，且配置於該底半導體晶粒的該底部側與該基材間。
  3. 如申請專利範圍第1項之半導體封裝體，其中該頂半導體晶粒係組配成提供電力至該底半導體晶粒。
  4. 如申請專利範圍第1項之半導體封裝體，其中該頂半導體晶粒係組配成促進於該底半導體晶粒與該基材之間的通訊。
  5. 如申請專利範圍第1項之半導體封裝體，其中該底半導體晶粒不包含矽通孔(TSV)。
  6. 一種製造一半導體封裝體之方法，該方法包含以下步驟：結合多個單粒化第一晶粒的每一者之一作用側至在多數第二晶粒之一晶圓上之一第二晶粒的各作用側，以形成晶圓層級之第一與第二晶粒對，各第一晶粒在面積上小於其對應之第二晶粒；形成在該晶圓層級上之該等第一與第二晶粒對上之一模製層；由該模製層側研磨該晶圓以暴露該第一晶粒的每一者及第二晶粒之每一者的數個互連凸塊；將該等第一與第二晶粒對單粒化；及將該等第一與第二晶粒對個別封裝在各個封裝基材上。
  7. 如申請專利範圍第6項之方法，其中將該等第一與第二晶粒對之單粒化的步驟包含雷射切劃該晶圓之一前側。
  8. 如申請專利範圍第7項之方法，其中將該等第一與第二晶粒對之單粒化的步驟更包含在切劃該晶圓之前側之後，研磨該晶圓之一背側。
  9. 一種半導體封裝體，包含：一基材；一底半導體晶粒，其具有帶有一表面積的一作用側及具有一底部側，該底半導體晶粒配置於基材之上且係以該作用側遠離該基材而與該基材分開；一頂半導體晶粒，其配置於該底半導體晶粒之上，且具有一作用側，且該作用側具有比該底半導體晶粒之表面積大的一表面積，該頂半導體晶粒係以靠近該基材的該作用側耦合至該基材，其中該底半導體晶粒之該作用側係面向且導電地耦合於該頂半導體晶粒之該作用側，且其中該頂半導體晶粒係藉導電結構來導電地耦合於該基材，而該導電結構繞過該底半導體晶粒之該底部側；一模製層，其收納該等導電結構及收納該底半導體晶粒，其中該模製層與該底半導體晶粒之該底部側及與該等導電結構共平面，其中該等導電結構包含多個凸塊，其自該頂半導體晶粒之該作用側延伸至低於該底半導體晶粒的該作用側且高於該底半導體晶粒的該底部側之一水平，且包含第一多個焊料球，其收納於該模製層內且耦合於耦接至該基材之第二多個焊料球。
  10. 如申請專利範圍第9項之半導體封裝體，其中該頂半導 體晶粒及該底半導體晶粒係更藉一底部填充材料層耦合至該基材，該底部填充材料層配置於該模製層及該基材間，且配置於該底半導體晶粒的該底部側與該基材間。
  11. 如申請專利範圍第9項之半導體封裝體，其中該頂半導體晶粒係組配成提供電力至該底半導體晶粒。
  12. 如申請專利範圍第9項之半導體封裝體，其中該頂半導體晶粒係組配成促進於該底半導體晶粒與該基材之間的通訊。
  13. 如申請專利範圍第1項之半導體封裝體，其中該底半導體晶粒不包含矽通孔(TSV)。
  14. 一種半導體封裝體，包含：一基材；一底半導體晶粒，其具有帶有一表面積的一作用側及具有一底部側，該底半導體晶粒配置於基材之上且係以該作用側遠離該基材而與該基材分開；一頂半導體晶粒，其配置於該底半導體晶粒之上，且具有一作用側，且該作用側具有比該底半導體晶粒之表面積大的一表面積，該頂半導體晶粒係以靠近該基材的該作用側耦合至該基材，其中該底半導體晶粒之該作用側係面向且導電地耦合於該頂半導體晶粒之該作用側，且其中該頂半導體晶粒係藉導電結構來導電地耦合於該基材，而該導電結構繞過該底半導體晶粒之該底部側； 一模製層，其收納該等導電結構及收納該底半導體晶粒，其中該模製層與該底半導體晶粒之該底部側及與該等導電結構共平面，其中該等導電結構包含收納於該模製層內之多個凸塊柱，其自該頂半導體晶粒之該作用側延伸至與該底半導體晶粒的該底部側共平面之一水平，該等多個凸塊柱包含居於該等多個凸塊柱中間之第一多個焊料球，且該等多數凸塊柱耦合於耦接至該基材之第二多個焊料球。
  15. 如申請專利範圍第14項之半導體封裝體，其中該頂半導體晶粒及該底半導體晶粒係更藉一底部填充材料層耦合至該基材，該底部填充材料層配置於該模製層及該基材間，且配置於該底半導體晶粒的該底部側與該基材間。
  16. 如申請專利範圍第14項之半導體封裝體，其中該頂半導體晶粒係組配成提供電力至該底半導體晶粒。
  17. 如申請專利範圍第14項之半導體封裝體，其中該頂半導體晶粒係組配成促進於該底半導體晶粒與該基材之間的通訊。
  18. 如申請專利範圍第14項之半導體封裝體，其中該底半導體晶粒不包含矽通孔(TSV)。
  19. 一種半導體封裝體，包含：一基材；一底半導體晶粒，其具有帶有一表面積的一作用側及具有一底部側，該底半導體晶粒配置於基材之上且係 以該作用側遠離該基材而與該基材分開；一頂半導體晶粒，其配置於該底半導體晶粒之上，且具有一作用側，且該作用側具有比該底半導體晶粒之表面積大的一表面積，該頂半導體晶粒係以靠近該基材的該作用側耦合至該基材，其中該底半導體晶粒之該作用側係面向且導電地耦合於該頂半導體晶粒之該作用側，且其中該頂半導體晶粒係藉導電結構來導電地耦合於該基材，而該導電結構繞過該底半導體晶粒之該底部側；一模製層，其收納該等導電結構及收納該底半導體晶粒，其中該模製層與該底半導體晶粒之該底部側及與該等導電結構共平面，其中該頂半導體晶粒及該底半導體晶粒係更藉一底部填充材料層耦合至該基材，該底部填充材料層配置於該模製層及該基材間，且配置於該底半導體晶粒的該底部側與該基材間。
  20. 如申請專利範圍第19項之半導體封裝體，其中該頂半導體晶粒係組配成提供電力至該底半導體晶粒。
  21. 如申請專利範圍第19項之半導體封裝體，其中該頂半導體晶粒係組配成促進於該底半導體晶粒與該基材之間的通訊。
  22. 如申請專利範圍第19項之半導體封裝體，其中該底半導體晶粒不包含矽通孔(TSV)。
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