TWI508128B - Plasma processing device and plasma processing method - Google Patents

Plasma processing device and plasma processing method Download PDF

Info

Publication number
TWI508128B
TWI508128B TW103106771A TW103106771A TWI508128B TW I508128 B TWI508128 B TW I508128B TW 103106771 A TW103106771 A TW 103106771A TW 103106771 A TW103106771 A TW 103106771A TW I508128 B TWI508128 B TW I508128B
Authority
TW
Taiwan
Prior art keywords
gas
processing
processing container
plasma
temperature
Prior art date
Application number
TW103106771A
Other languages
Chinese (zh)
Other versions
TW201503215A (en
Inventor
Hidehiro Yanai
Shin Hiyama
Toshiya Shimada
Yukinori Aburatani
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Publication of TW201503215A publication Critical patent/TW201503215A/en
Application granted granted Critical
Publication of TWI508128B publication Critical patent/TWI508128B/en

Links

Landscapes

  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Description

電漿處理裝置及電漿處理方法Plasma processing device and plasma processing method

本發明，係有關於電漿處理裝置及電漿處理方法。The present invention relates to a plasma processing apparatus and a plasma processing method.

在半導體裝置之製程中，存在使用了對於處理標的物(例如晶圓)進行電漿處理之電漿處理裝置的情況(例如，參見專利文獻1)。在電漿處理裝置中，係在處理容器內生成處理氣體的電漿，而對於處理標的物進行電漿處理。對於電漿處理裝置，搬送複數個處理標的物，進行依序對於所搬送之處理標的物進行電漿處理的批次處理。In the process of a semiconductor device, there is a case where a plasma processing apparatus for performing plasma processing on a target object (for example, a wafer) is used (for example, see Patent Document 1). In the plasma processing apparatus, a plasma of a processing gas is generated in a processing vessel, and a plasma treatment is performed on the processing target. In the plasma processing apparatus, a plurality of processing target objects are transported, and batch processing for plasma processing of the processed target objects is sequentially performed.

[先前技術文獻][Previous Technical Literature] [專利文獻][Patent Literature]

[專利文獻1]日本發明專利公開2004-63663號公報[Patent Document 1] Japanese Patent Publication No. 2004-63663

然而，存在在處理標的物的被處理面內之電漿處理的均勻性為低的情形。此外，存在在處理標的物間之電漿處理的均勻性為低的情形。所以，本發明，係提供一種電漿處理裝置及電漿處理方法，可使在處理標的物的被處理面內之電漿處理的均勻性提升，或使在處理標的物上之電漿處理的均勻性提升。However, there is a case where the uniformity of plasma treatment in the treated surface of the treated object is low. Further, there is a case where the uniformity of the plasma treatment between the treatment targets is low. Therefore, the present invention provides a plasma processing apparatus and a plasma processing method which can improve the uniformity of plasma treatment in the treated surface of the treated object or the plasma treatment on the treated object. Uniformity is improved.

依照本發明之一態樣，提供一種電漿處理裝置，具有：對於處理標的物進行處理之處理容器；對於前述處理容器內將處理氣體作供應的供氣系統；對於前述處理容器內作排氣的排氣系統；設於前述處理容器的外側，生成供應於前述處理容器內之前述處理氣體的電漿之電漿生成部；設於至少前述處理容器與前述電漿生成部之間，使調溫氣體沿著前述處理容器的外壁而流動的流路；開設於前述處理容器的圓周方向，對於前述流路將前述溫度調整氣體作導入的導入孔；以及將流動於前述流路之前述溫度調整氣體作排出的排出孔。According to an aspect of the present invention, there is provided a plasma processing apparatus comprising: a processing container for processing a target object; a gas supply system for supplying a processing gas in the processing container; and exhausting the inside of the processing container; An exhaust system provided on the outer side of the processing container to generate a plasma generated by the plasma of the processing gas in the processing container; and at least between the processing container and the plasma generating unit a flow path through which the warm gas flows along the outer wall of the processing container; an introduction hole that opens the temperature adjustment gas to the flow path in the circumferential direction of the processing container; and the temperature adjustment that flows in the flow path The gas is used as a discharge hole for discharge.

依照本發明之其他態様，提供一種電漿處理裝置， 具有：對於處理標的物作收容之處理容器；對於前述處理容器內將處理氣體作供應的供氣系統；對於前述處理容器內作排氣的排氣系統；設於前述處理容器的外側，生成供應於前述處理容器內之前述處理氣體的電漿之電漿生成部；設於至少前述處理容器與前述電漿生成部之間，使調溫氣體沿著前述處理容器的外壁而流動的流路；對於前述流路將前述溫度調整氣體作導入的導入孔；將流動於前述流路之前述溫度調整氣體作排出的排出孔；連接於前述排出孔，將前述溫度調整氣體從前述排出孔作排出之排出管；設於前述排出管之調整閥；以及對於前述調整閥之開度進行調整，而對於前述溫度調整氣體的流量進行控制之控制部。According to another aspect of the present invention, a plasma processing apparatus is provided, Having a processing container for receiving a target object; a gas supply system for supplying a processing gas in the processing container; an exhaust system for exhausting the inside of the processing container; and being disposed outside the processing container to generate a supply a plasma generating portion of the plasma of the processing gas in the processing container; a flow path provided between at least the processing container and the plasma generating portion to flow a temperature-controlled gas along an outer wall of the processing container; An introduction hole for introducing the temperature adjustment gas into the flow path; a discharge hole for discharging the temperature adjustment gas flowing through the flow path; and a discharge hole connected to the discharge hole to discharge the temperature adjustment gas from the discharge hole a discharge pipe; an adjustment valve provided in the discharge pipe; and a control unit that controls an opening degree of the adjustment valve to control a flow rate of the temperature adjustment gas.

依照本發明之其他態様，提供一種電漿處理方法，具有：對於處理容器內將處理標的物作搬送之程序；以及對於前述處理容器內將處理氣體作導入，藉設於前述處理容器的外側之電漿生成部而生成供應於前述處理容器內之前述處理氣體的電漿，而對於前述處理標的物進行電漿處理之電漿處理程序； 在至少前述電漿處理程序，係在設於至少前述處理容器與前述電漿生成部之間且沿著前述處理容器的外壁之流路，從開設於前述處理容器的圓周方向之導入孔，使調溫氣體作流動。According to another aspect of the present invention, there is provided a plasma processing method comprising: a process for transporting a target object in a processing container; and introducing a processing gas into the processing container, by being disposed outside the processing container a plasma generating unit that generates a plasma processing program for plasma processing of the processing gas supplied to the processing container; At least the plasma processing program is formed in an inlet hole formed in a circumferential direction of the processing container between a flow path provided between at least the processing container and the plasma generating portion and along an outer wall of the processing container. The tempering gas flows.

依照本發明之其他態様，提供一種電漿處理方法，具有：對於處理容器內將處理標的物作搬送之程序；以及對於前述處理容器內將處理氣體作導入，藉設於前述處理容器的外側之電漿生成部而生成供應於前述處理容器內之前述處理氣體的電漿，而對於前述處理標的物進行電漿處理之電漿處理程序；在至少前述電漿處理程序，係在設於至少前述處理容器與前述電漿生成部之間且沿著前述處理容器的外壁之流路使調溫氣體作流動，同時以前述處理容器的溫度成為既定的溫度之方式對於前述溫度調整氣體之流量進行控制。According to another aspect of the present invention, there is provided a plasma processing method comprising: a process for transporting a target object in a processing container; and introducing a processing gas into the processing container, by being disposed outside the processing container a plasma generating unit that generates a plasma to be supplied to the processing gas in the processing container, and a plasma processing program that performs plasma processing on the processing target; at least the plasma processing program is provided in at least the foregoing The temperature regulating gas flows between the processing container and the plasma generating portion and along the flow path of the outer wall of the processing container, and the flow rate of the temperature adjusting gas is controlled such that the temperature of the processing container becomes a predetermined temperature. .

依照本發明相關之電漿處理裝置及電漿處理方法，可使在電漿處理之處理標的物的被處理面內之均勻性提升，或使在電漿處理的處理標的物間之均勻性提升。According to the plasma processing apparatus and the plasma processing method of the present invention, the uniformity in the treated surface of the treated object of the plasma treatment can be improved, or the uniformity between the processed objects in the plasma processing can be improved. .

10‧‧‧電漿處理裝置10‧‧‧ Plasma processing unit

20‧‧‧晶圓20‧‧‧ wafer

120‧‧‧處理容器120‧‧‧Processing container

132‧‧‧諧振線圈132‧‧‧Resonance coil

140‧‧‧流路140‧‧‧flow path

152‧‧‧遮蔽部152‧‧‧Shading Department

152a‧‧‧導入孔152a‧‧‧Importing hole

153‧‧‧導氣部153‧‧‧Gas Guide

156‧‧‧中間開口156‧‧‧Intermediate opening

185‧‧‧排出孔185‧‧‧Exhaust hole

[圖1]對於本發明的一實施形態相關之電漿處理裝置進行繪示的剖面示意圖。Fig. 1 is a schematic cross-sectional view showing a plasma processing apparatus according to an embodiment of the present invention.

[圖2](a)係往圖1之A-A’線的箭頭方向看之剖面圖，(b)係遮蔽部之展開圖。Fig. 2 (a) is a cross-sectional view taken along the line A-A' of Fig. 1 in the direction of the arrow, and (b) is a developed view of the shielding portion.

[圖3]對於本發明的一實施形態相關之電漿處理方法進行繪示的流程圖。Fig. 3 is a flow chart showing a plasma processing method according to an embodiment of the present invention.

[圖4](a)係對於本發明的一實施形態相關之處理容器的溫度分布進行繪示之示意圖，(b)係對於第1比較例相關之處理容器的溫度分布進行繪示之示意圖。Fig. 4 (a) is a schematic view showing a temperature distribution of a processing container according to an embodiment of the present invention, and (b) is a schematic view showing a temperature distribution of a processing container according to the first comparative example.

<發明人等得到的發現><Discovery by the inventor, etc.>

首先，說明有關於發明人等得到的發現。在半導體裝置之製程中，存在使用了對於處理標的物進行電漿處理之電漿處理裝置的情況。在電漿處理裝置中，係在處理容器內生成處理氣體的電漿，而對於處理標的物進行電漿處理。對於電漿處理裝置，搬送複數個處理標的物，進行依序對於所搬送之處理標的物進行電漿處理的批次處理。First, the findings regarding the inventors and the like are explained. In the process of a semiconductor device, there is a case where a plasma processing apparatus for performing plasma treatment on a target object is used. In the plasma processing apparatus, a plasma of a processing gas is generated in a processing vessel, and a plasma treatment is performed on the processing target. In the plasma processing apparatus, a plurality of processing target objects are transported, and batch processing for plasma processing of the processed target objects is sequentially performed.

此處所稱之「電漿處理」，係指：對於形成於處理標的物上之抗蝕膜進行灰化(ashing)、或對於形成於處理標的物上之金屬膜和半導體膜等進行蝕刻、或對於形成於處理標的物上之金屬膜和半導體膜等進行氧化、氮化或灰化。The term "plasma treatment" as used herein means ashing a resist film formed on a target object, or etching a metal film or a semiconductor film formed on a target object, or The metal film, the semiconductor film, and the like formed on the target object are oxidized, nitrided, or ashed.

發明人等，係發現了：在電漿處理裝置中，對於處理標的物之電漿處理的速度和電漿處理的程度，係依存於處理容器的溫度。此處所稱之「電漿處理的速度」，係例如指：灰化、蝕刻、氧化或氮化等的速度。此外，「電漿處理的程度」，係例如指：氧化或氮化等的程度(濃度、深度等)。The inventors have found that in the plasma processing apparatus, the speed of the plasma treatment for treating the target and the degree of plasma treatment depend on the temperature of the processing container. The term "speed of plasma treatment" as used herein means, for example, the speed of ashing, etching, oxidation or nitriding. In addition, the "degree of plasma treatment" means, for example, the degree (concentration, depth, etc.) of oxidation or nitridation.

處理容器的溫度、和以包圍處理容器的方式而設之線圈的溫度在圓周方向上為不均勻之情況下，處理標的物本身的溫度分布會在面內方向上成為不均勻。或者電漿生成區域的電漿密度會在處理標的物的面內方向上成為不均勻。在處理容器的溫度為低的場所附近之電漿處理的速度，係低於在處理容器的溫度為高的場所附近之電漿處理的速度。或者在處理容器的溫度為低的場所附近之電漿處理的程度，係低於在處理容器的溫度為高的場所附近之電漿處理的程度。為此，具有在處理標的物的被處理面內之電漿處理的均勻性會不良化之可能性。When the temperature of the processing container and the temperature of the coil provided to surround the processing container are not uniform in the circumferential direction, the temperature distribution of the processing target itself becomes uneven in the in-plane direction. Or the plasma density of the plasma generating region may become uneven in the in-plane direction of the treated target. The speed of the plasma treatment in the vicinity of the place where the temperature of the processing container is low is lower than the speed of the plasma processing in the vicinity of the place where the temperature of the processing container is high. Alternatively, the degree of plasma treatment in the vicinity of the place where the temperature of the processing container is low is lower than the degree of plasma treatment in the vicinity of the place where the temperature of the processing container is high. For this reason, there is a possibility that the uniformity of the plasma treatment in the treated surface of the target object may be deteriorated.

此外，進行電漿處理會使得處理容器的溫度可能隨時間推移而上升。例如，對於一個處理標的物進行電漿處理之情況下，處理結束時之處理容器的溫度，係成為高於處理開始時之處理容器的溫度。此外，連續對於複數個處理標的物進行電漿處理之情況下，對於複數個處理標的物進行處理時之處理容器的溫度，係成為高於對於第一個處理標的物進行處理時之處理容器的溫度。如此之情況下，處理標的物本身的溫度可能會隨時間推移而變化。 或者電漿生成區域的電漿密度可能會隨時間推移而變化。為此，在處理中或每個處理中，電漿處理的速度或電漿處理的程度會隨時間推移而變化。因此，具有在處理標的物間之電漿處理的均勻性會不良化之可能性。In addition, plasma treatment can cause the temperature of the processing vessel to rise over time. For example, in the case of performing plasma treatment on one of the treated objects, the temperature of the processing container at the end of the processing is higher than the temperature of the processing container at the start of the processing. Further, in the case where plasma processing is performed on a plurality of processing targets continuously, the temperature of the processing container when processing the plurality of processing targets is higher than that of the processing container when the first processing target is processed. temperature. In such a case, the temperature of the subject matter itself may change over time. Or the plasma density of the plasma generating region may change over time. For this reason, the speed of plasma treatment or the degree of plasma treatment may vary over time during or during each treatment. Therefore, there is a possibility that the uniformity of the plasma treatment between the treatment targets may be degraded.

所以，本發明人等，係針對解決上述課題之手段進行銳意研究的結果，得到如以下之發現。Therefore, the present inventors have conducted intensive studies on the means for solving the above problems, and have found the following findings.

在處理容器與電漿生成部之間，沿著處理容器的外壁，而設置調溫氣體的流路。在流路，係設置導入孔及排出孔。導入孔，係以均等的間隔而開設於處理容器的圓周方向。調溫氣體，係從導入孔在處理容器的圓周方向上均等作導入。處理容器，係藉調溫氣體而於圓周方向上均等被冷卻。處理容器的溫度，係在圓周方向上成為均勻。藉此，在處理標的物的面內之電漿處理的均勻性會提升。A flow path of the tempering gas is provided between the processing container and the plasma generating portion along the outer wall of the processing container. In the flow path, an introduction hole and a discharge hole are provided. The introduction holes are opened in the circumferential direction of the processing container at equal intervals. The tempering gas is introduced equally from the introduction hole in the circumferential direction of the processing container. The processing container is uniformly cooled in the circumferential direction by the tempering gas. The temperature of the processing vessel is uniform in the circumferential direction. Thereby, the uniformity of the plasma treatment in the surface of the treated object is enhanced.

此外，在排出孔，係連接著排出管。在排出管，係設置有調整閥。調溫氣體的流量，係對於調整閥的開度作調整而作控制。處理容器的溫度，係維持於既定的溫度。藉此，在處理中或每個處理中，可抑制電漿處理的速度或電漿處理的程度會隨時間推移而變化。因此，在處理標的物間之電漿處理的均勻性會提升。Further, a discharge pipe is connected to the discharge hole. In the discharge pipe, a regulating valve is provided. The flow rate of the temperature control gas is controlled by adjusting the opening degree of the adjustment valve. The temperature of the processing vessel is maintained at a predetermined temperature. Thereby, the speed at which plasma treatment or the degree of plasma treatment can be suppressed during processing or in each treatment changes with time. Therefore, the uniformity of the plasma treatment between the treatment targets is enhanced.

依以上方式，可使在處理標的物的面內之電漿處理的均勻性提升，或使在處理標的物間之電漿處理的均勻性提升。以下的實施形態，係基於上述發現者。In the above manner, the uniformity of the plasma treatment in the in-plane of the treatment target can be improved, or the uniformity of the plasma treatment between the treatment targets can be improved. The following embodiments are based on the above discoverers.

(1)電漿處理裝置的構造(1) Structure of plasma processing apparatus

圖1，係對於本發明的一實施形態相關之電漿處理裝置進行繪示的剖面示意圖。電漿處理裝置10，係具有：對於作為處理標的物之晶圓20進行處理的處理容器120；對於處理容器120內將處理氣體作供應的供氣系統、對於處理容器120內進行排氣的排氣系統；設於處理容器120的外側，對於供應至處理容器120內之處理氣體進行激發之電漿生成部；設於處理容器120與電漿生成部之間，使調溫氣體沿著處理容器120的外壁而流動的流路140；以均等的間隔而開設於處理容器120的圓周方向，對於流路140將調溫氣體作導入的導入孔152a；將流動於流路140之調溫氣體作排出的排出孔185。以下，說明細節。Fig. 1 is a schematic cross-sectional view showing a plasma processing apparatus according to an embodiment of the present invention. The plasma processing apparatus 10 includes a processing container 120 that processes the wafer 20 as a processing target, a gas supply system that supplies the processing gas in the processing container 120, and a row that exhausts the inside of the processing container 120. a gas system; a plasma generating portion that is provided outside the processing container 120 and that excites the processing gas supplied into the processing container 120; and is disposed between the processing container 120 and the plasma generating portion to cause the temperature regulating gas to flow along the processing container a flow path 140 that flows through the outer wall of the 120; an introduction hole 152a that introduces the temperature-regulating gas into the flow path 140 at a uniform interval in the circumferential direction of the processing container 120; and a temperature-regulating gas that flows through the flow path 140 The discharge hole 185 is discharged. The details will be described below.

在本實施形態中，「電漿處理」，係例如指：對於形成於處理標的物的處理面上之抗蝕膜進行灰化。具體而言，「電漿處理」，係例如指：對於塗布於晶圓上之抗蝕膜進行灰化之情況、和對於形成有突出電極之半導體元件進行除渣處理的情況等。另外，除渣處理，係指：將對於抗蝕膜進行圖案化時產生的抗蝕層殘渣(所謂的浮渣)作除去的處理。因此，在本實施形態中，「處理標的物」，係包含：作切割前(前程序)的晶圓20(所謂的whole wafer)、和作切割後(後程序)的半導體裝置、和半導體封裝等。在本實施形態中，係當作處理標的物為前程序的晶圓20而作說明。In the present embodiment, "plasma treatment" means, for example, ashing a resist film formed on a treatment surface of a treatment target. Specifically, the term "plasma treatment" refers to, for example, a case where ashing is applied to a resist film applied to a wafer, and a case where slag removal is performed on a semiconductor element on which a protruding electrode is formed. In addition, the slag removal treatment refers to a treatment of removing the resist residue (so-called scum) generated when the resist film is patterned. Therefore, in the present embodiment, the "processing target" includes a wafer 20 (so-called whole wafer) before cutting (pre-program), a semiconductor device for cutting (post-program), and a semiconductor package. Wait. In the present embodiment, the description will be made on the wafer 20 in which the target object is the pre-program.

電漿處理裝置10，係具有：反應管131及具有晶圓收容部190之處理容器120。電漿處理裝置10，係亦可具有：收容至少批次處理1次份的一個或複數個晶圓20之預抽室(load lock chamber)(不圖示)、及具備對於處理容器120內將晶圓20依序搬送之搬送部的搬送室(不圖示)。在本實施形態中，電漿處理裝置10，係單片式。在處理容器120內，係逐個搬送晶圓20，依序作電漿處理。The plasma processing apparatus 10 includes a reaction tube 131 and a processing container 120 having a wafer storage unit 190. The plasma processing apparatus 10 may have a load lock chamber (not shown) that accommodates at least one batch of one or more wafers 20, and is provided in the processing container 120. The transfer chamber (not shown) of the transport unit in which the wafer 20 is sequentially transported. In the present embodiment, the plasma processing apparatus 10 is of a single piece type. In the processing container 120, the wafers 20 are transferred one by one, and plasma processing is sequentially performed.

(反應管)(reaction tube)

反應管131，係例如圓筒狀。反應管131，係例如由高純度的石英玻璃或陶瓷等而形成。反應管131的上端及下端，係具有開口。反應管131，係設於作為架台之底板148之上。反應管131的中心軸，係設於底板148的法線方向。The reaction tube 131 is, for example, cylindrical. The reaction tube 131 is formed, for example, of high-purity quartz glass or ceramics. The upper end and the lower end of the reaction tube 131 have openings. The reaction tube 131 is attached to the bottom plate 148 as a gantry. The central axis of the reaction tube 131 is disposed in the normal direction of the bottom plate 148.

於反應管131之上端開口，係設有圓板狀的頂板154。頂板154，係將反應管131的上端開口作密封。頂板154，係隔著O環(不圖示)，而接於反應管131。於反應管131之內部，係形成有電漿生成區域130。The upper end of the reaction tube 131 is opened, and a disk-shaped top plate 154 is provided. The top plate 154 seals the upper end opening of the reaction tube 131. The top plate 154 is connected to the reaction tube 131 via an O-ring (not shown). Inside the reaction tube 131, a plasma generation region 130 is formed.

頂板154的中央，係設有氣體導入口133。處理氣體和沖洗氣體，係從氣體導入口133供應於處理容器120內。A gas introduction port 133 is provided in the center of the top plate 154. The processing gas and the flushing gas are supplied from the gas introduction port 133 in the processing container 120.

於氣體導入口133，係連接了供氣系統。供氣 系統，係以對於處理容器120內將處理氣體或沖洗氣體作供應的方式而構成。供氣系統，係具有：對於處理容器120內將處理氣體作供應的處理氣體供給系統、對於處理容器120內將沖洗氣體作供應的沖洗氣體供給系統。另外，沖洗氣體供給系統，係亦作為對於往處理容器120內之處理氣體的供應進行促進的載體氣體供給系統而發揮功能。A gas supply system is connected to the gas introduction port 133. Gas supply The system is constructed to supply processing gas or flushing gas to the processing vessel 120. The gas supply system has a processing gas supply system for supplying the processing gas in the processing container 120, and a flushing gas supply system for supplying the flushing gas into the processing container 120. Further, the flushing gas supply system also functions as a carrier gas supply system that promotes the supply of the processing gas into the processing container 120.

於氣體導入口133，係連接著使處理氣體作流動之配管52c的下游端。於配管52c，係設有閥52a。在比配管52c的閥52a靠上游側，係設有質流控制器52b。質流控制器52b，係以對於處理氣體的流量進行調整的方式而構成。在比配管52c的質流控制器52b靠上游側，係連接著處理氣體鋼瓶(不圖示)。主要，藉配管52c、閥52a及質流控制器52b而構成了處理氣體供給系統。另外，亦可考慮使處理氣體鋼瓶包含於處理氣體供給系統中。The gas introduction port 133 is connected to the downstream end of the pipe 52c through which the processing gas flows. A valve 52a is provided in the pipe 52c. A mass flow controller 52b is provided on the upstream side of the valve 52a of the pipe 52c. The mass flow controller 52b is configured to adjust the flow rate of the processing gas. A processing gas cylinder (not shown) is connected to the upstream side of the mass flow controller 52b of the pipe 52c. Mainly, the processing gas supply system is constituted by the piping 52c, the valve 52a, and the mass flow controller 52b. In addition, it is also conceivable to include the process gas cylinder in the process gas supply system.

處理氣體的種類，係使用：依電漿處理的內容，而作適當選擇。作為處理氣體，例如，氧(O2 )氣、氫(H2 )氣體、氮(N2 )氣體、氬(Ar)氣體、氦(He)氣體、四氟甲烷(CF4 )氣體及三氟甲烷(CHF3 )氣體中的至少任一者，或者將該等作組合之氣體。The type of the treatment gas is used: it is appropriately selected depending on the content of the plasma treatment. As the processing gas, for example, oxygen (O 2 ) gas, hydrogen (H 2 ) gas, nitrogen (N 2 ) gas, argon (Ar) gas, helium (He) gas, tetrafluoromethane (CF 4 ) gas, and trifluoroethylene At least one of methane (CHF 3 ) gases, or a gas that combines them.

在比配管52c的閥52a靠下游測，係連接著使沖洗氣體作流動之配管51c的下游端。於配管51c，係設有閥51a。在比配管51c的閥51a靠上游側，係設有質 流控制器51b。質流控制器51b，係對於沖洗氣體的流量進行調整。在比配管51c的質流控制器51b靠上游側，係連接著沖洗氣體鋼瓶(不圖示)。主要，配管51c、藉閥51a及質流控制器51b而構成了沖洗氣體供給系統。另外，亦可考慮使沖洗氣體鋼瓶包含於沖洗氣體供給系統中。作為沖洗氣體，使用了例如N2 氣體或稀有氣體等之惰性氣體。The downstream end of the pipe 51c for allowing the flushing gas to flow is connected downstream of the valve 52a of the pipe 52c. A valve 51a is provided in the pipe 51c. A mass flow controller 51b is provided on the upstream side of the valve 51a of the pipe 51c. The mass flow controller 51b adjusts the flow rate of the flushing gas. A flushing gas cylinder (not shown) is connected to the upstream side of the mass flow controller 51b of the pipe 51c. Mainly, the piping 51c, the valve 51a, and the mass flow controller 51b constitute a flushing gas supply system. In addition, it is also conceivable to include the flushing gas cylinder in the flushing gas supply system. As the flushing gas, an inert gas such as N 2 gas or a rare gas is used.

在處理容器120內的上方，係設有將從氣體導入口133所供應之氣體予以整流之擴散板160。擴散板160，係例如由石英等所形成。擴散板160的平面形狀，係沿著反應管131的內徑之形狀，為略圓形。擴散板160，係與處理容器120的內壁以既定間隔作分離而設，水平作保持。擴散板160係以無孔之板而形成。藉此，從氣體導入口133所供應之氣體，係衝撞於擴散板160，然而沿著處理容器120的內壁，而從處理容器120內的上方流向下方。Above the inside of the processing container 120, a diffusion plate 160 for rectifying the gas supplied from the gas introduction port 133 is provided. The diffusion plate 160 is formed, for example, of quartz or the like. The planar shape of the diffusion plate 160 is slightly circular along the shape of the inner diameter of the reaction tube 131. The diffusion plate 160 is provided at a predetermined interval from the inner wall of the processing container 120, and is horizontally held. The diffusion plate 160 is formed by a non-porous plate. Thereby, the gas supplied from the gas introduction port 133 collides with the diffusion plate 160, but flows downward from the upper side in the inside of the processing container 120 along the inner wall of the processing container 120.

(電漿生成部)(plasma generation department)

在處理容器120的外側，係設有諧振線圈132。諧振線圈132，係生成供應至處理容器120內之處理氣體的電漿。諧振線圈132，係例如，沿著反應管131的外周而作捲繞。在諧振線圈132，係透過RF感測器168，而連接著高頻電源144。高頻電源144，係對於諧振線圈132施加高頻電力。藉此，處理氣體，係在電漿生成區域130中， 成為電漿狀態。在諧振線圈132，係透過RF感測器168，而連接著頻率整合器146。RF感測器168，係對於高頻電力的行進波、反射波等作監視的方式而構成。藉RF感測器168而監視之高頻電力值，係反饋至頻率整合器146。頻率整合器146，係構成為：以高頻電力的反射波成為最小的方式，對於振盪頻率進行控制。On the outside of the processing container 120, a resonance coil 132 is provided. The resonant coil 132 generates a plasma that is supplied to the processing gas in the processing vessel 120. The resonant coil 132 is wound around the outer circumference of the reaction tube 131, for example. The resonant coil 132 is connected to the high frequency power supply 144 through the RF sensor 168. The high frequency power source 144 applies high frequency power to the resonance coil 132. Thereby, the processing gas is in the plasma generating region 130, Become a plasma state. In the resonant coil 132, the RF inductor 146 is connected through the RF sensor 168. The RF sensor 168 is configured to monitor a traveling wave, a reflected wave, or the like of high-frequency power. The high frequency power value monitored by the RF sensor 168 is fed back to the frequency integrator 146. The frequency integrator 146 is configured to control the oscillation frequency so that the reflected wave of the high-frequency power is minimized.

主要，藉諧振線圈132而構成了電漿生成部。另外，亦可考慮使RF感測器168、高頻電源144及頻率整合器146包含於電漿生成部中。以此方式，電漿處理裝置10，係藉例如ICP(Inductive Coupling Plasma)而對於處理標的物進行電漿處理之裝置。Mainly, the resonance coil 132 constitutes a plasma generating portion. Further, it is also conceivable to include the RF sensor 168, the high-frequency power source 144, and the frequency integrator 146 in the plasma generating unit. In this manner, the plasma processing apparatus 10 is a device that performs plasma treatment on a target object by, for example, ICP (Inductive Coupling Plasma).

於此，諧振線圈132，係以在固定波長模式下作諧振的方式，設定了捲徑、捲繞間距、匝數等。諧振線圈132，係以形成既定波長的駐波之方式而構成。亦即，諧振線圈132的長度，係設定為相當於從高頻電源144所供應之高頻電源的既定頻率之1波長的整數倍(1倍、2倍、...)或半波長或1/4波長之長度。1波長的長度，係例如在13.56MHz之情況下係約22m、在27.12MHz之情況下係約11m、在54.24MHz之情況下係約5.5m。諧振線圈132之匝數，係例如10。諧振線圈132之捲徑，係例如300mm以上、400mm以下，較佳係360mm以上、370mm以下。Here, the resonant coil 132 sets the coil diameter, the winding pitch, the number of turns, and the like so as to resonate in the fixed wavelength mode. The resonant coil 132 is configured to form a standing wave of a predetermined wavelength. That is, the length of the resonant coil 132 is set to correspond to an integral multiple (1, 2, ...) or a half wavelength or 1 of a predetermined frequency of the high frequency power supplied from the high frequency power supply 144. /4 wavelength length. The length of one wavelength is, for example, about 22 m in the case of 13.56 MHz, about 11 m in the case of 27.12 MHz, and about 5.5 m in the case of 54.24 MHz. The number of turns of the resonant coil 132 is, for example, 10. The winding diameter of the resonant coil 132 is, for example, 300 mm or more and 400 mm or less, preferably 360 mm or more and 370 mm or less.

諧振線圈132，係平板狀以絕緣性的材料而形成且藉鉛直立設於底板148的上端面之複數個支撐構材 (不圖示)而作支撐。此外，諧振線圈132之兩端，係作電性接地。諧振線圈132的至少一端，係透過可動分接頭162而接地。藉此，可在電漿處理裝置10的最初之設置時或處理條件的變更時，對於諧振線圈132的長度進行微調整。諧振線圈132的另一端，係透過固定接地164而接地。此外，在諧振線圈132之作接地的兩端之間，係藉可動分接頭166而構成了供電部。藉此，可進一步在電漿處理裝置10的最初之設置時或處理條件的變更時，以對於諧振線圈132的阻抗進行微調整之方式而構成。亦即，諧振線圈132，係在兩端具備作電性接地之接地部，在各接地部之間具備從高頻電源144作電力供給之供電部。至少一方的接地部，係採用可調整位置之可變式接地部。然後，供電部，係採用可調整位置的可變式供電部。諧振線圈132具備可變式接地部及可變式供電部，使得可易於進行電漿生成部的諧振頻率及負載阻抗之調整。The resonant coil 132 is formed of a flat material and is formed of an insulating material and is supported by a plurality of supporting members which are vertically erected on the upper end surface of the bottom plate 148. (not shown) for support. In addition, both ends of the resonant coil 132 are electrically grounded. At least one end of the resonant coil 132 is grounded through the movable tap 162. Thereby, the length of the resonance coil 132 can be finely adjusted at the time of initial setting of the plasma processing apparatus 10 or when the processing conditions are changed. The other end of the resonant coil 132 is grounded through a fixed ground 164. Further, between the both ends of the resonant coil 132 which are grounded, the power supply portion is constituted by the movable tap 166. Thereby, it is possible to further configure the impedance of the resonance coil 132 to be finely adjusted at the time of initial setting of the plasma processing apparatus 10 or when the processing conditions are changed. In other words, the resonant coil 132 is provided with a grounding portion for electrically grounding at both ends, and a power supply portion for supplying power from the high-frequency power source 144 is provided between the grounding portions. At least one of the grounding portions is a variable grounding portion that can be adjusted in position. Then, the power supply unit employs a variable power supply unit that can adjust the position. The resonant coil 132 includes a variable ground portion and a variable power supply portion, so that the resonance frequency and the load impedance of the plasma generating portion can be easily adjusted.

(遮蔽部)(shadowing part)

以包圍作為電漿生成部之諧振線圈132的外側之方式，設有遮蔽部152。遮蔽部152係具有導電性。遮蔽部152，係在諧振線圈132之外側，對於電磁波洩漏的情形進行遮蔽。諧振所需的電容成分，係形成於諧振線圈132與遮蔽部152之間。遮蔽部152，係藉例如鋁合金、銅或銅合金等之導電性材料而形成。遮蔽部152，係圓筒狀，圓筒狀對於金屬板進行彎曲加工而形成。A shielding portion 152 is provided to surround the outer side of the resonant coil 132 as the plasma generating portion. The shielding portion 152 is electrically conductive. The shielding portion 152 is disposed on the outer side of the resonance coil 132 to shield the electromagnetic wave from leaking. The capacitance component required for resonance is formed between the resonance coil 132 and the shielding portion 152. The shielding portion 152 is formed of a conductive material such as aluminum alloy, copper or copper alloy. The shielding portion 152 is formed in a cylindrical shape and is formed by bending a metal plate in a cylindrical shape.

於此，使諧振線圈132與遮蔽部152之間的電容容量為Cs、諧振線圈132與反應管131之間的電容容量為Cp時，為Cs>>Cp。遮蔽部152，係以符合上述的方式而構成。遮蔽部152的直徑，係基於反應管131的內徑及諧振線圈132的捲徑而設定。Here, when the capacitance capacity between the resonance coil 132 and the shielding portion 152 is Cs, and the capacitance capacity between the resonance coil 132 and the reaction tube 131 is Cp, it is Cs>>Cp. The shielding portion 152 is configured in a manner consistent with the above. The diameter of the shielding portion 152 is set based on the inner diameter of the reaction tube 131 and the winding diameter of the resonant coil 132.

遮蔽部152的高度，係以成為高於配置了諧振線圈132之範圍的高度之方式而構成。The height of the shielding portion 152 is configured to be higher than the height of the range in which the resonant coil 132 is disposed.

遮蔽部152的下端，係較佳為接於後述之底板148。假如遮蔽部152的下端從底板148分離之情況下，遮蔽部152與底板148之間隔，係較佳為小於後述之調溫氣體之導入孔152a的直徑。The lower end of the shielding portion 152 is preferably connected to a bottom plate 148 which will be described later. If the lower end of the shielding portion 152 is separated from the bottom plate 148, the distance between the shielding portion 152 and the bottom plate 148 is preferably smaller than the diameter of the introduction hole 152a of the temperature-regulating gas to be described later.

在本實施形態中，係遮蔽部152，係構成調溫氣體的流路140之一部分。關於此點，係於後敘述細節。In the present embodiment, the shielding portion 152 is a portion of the flow path 140 constituting the tempering gas. In this regard, the details will be described later.

(晶圓收容部)(wafer housing department)

於反應管131之下方(排氣系統側)，係設有晶圓收容部190。晶圓收容部190，係將晶圓20作收容。反應管131的下端開口，係氣密連接於晶圓收容部190。在晶圓收容部190內，係形成有對於晶圓20進行處理之處理室145。處理室145，係與上述之電漿生成區域130作連通。晶圓收容部190的下端開口，係藉碗狀之底板169而密封。晶圓收容部190、反應管131及底板169之各者的中心軸，係鉛直作配置。A wafer accommodating portion 190 is provided below the reaction tube 131 (on the exhaust system side). The wafer accommodating portion 190 holds the wafer 20 therein. The lower end of the reaction tube 131 is opened and hermetically connected to the wafer housing portion 190. A processing chamber 145 for processing the wafer 20 is formed in the wafer housing portion 190. The processing chamber 145 is in communication with the plasma generating region 130 described above. The lower end of the wafer accommodating portion 190 is opened and sealed by a bowl-shaped bottom plate 169. The central axes of the wafer housing portion 190, the reaction tube 131, and the bottom plate 169 are arranged vertically.

在處理室145內，係設有基座159。基座 159，係具有基座台111。基座台111，係對於晶圓20作支撐。在基座台111的下方，係設有複數個支柱161。複數個支柱161，係對於基座台111從下方作支撐。在基座台159的內部，係設有加熱器163。加熱器163，係對於支撐於基座159上之晶圓20進行加熱。A susceptor 159 is provided in the processing chamber 145. Pedestal 159 has a base table 111. The susceptor table 111 supports the wafer 20. A plurality of pillars 161 are provided below the susceptor table 111. A plurality of struts 161 support the susceptor table 111 from below. Inside the susceptor table 159, a heater 163 is provided. The heater 163 heats the wafer 20 supported on the susceptor 159.

在基座台111的下方，係設有升降基板171。以對於升降基板171作連通的方式，設有導軸167。導軸167，係對於升降基板171的升降作導引。複數個升降銷113，係在升降基板171上設於鉛直方向。升降銷113，係對於基座台111的外周部貫通於鉛直方向。在升降銷113的上端，係設有基板保持部114。基板保持部114，係延伸於基座台111的中心方向，對於晶圓20的外周作保持。升降基板171，係連結於升降軸173的上端。升降軸173，係貫通底板169，連結於升降驅動部(不圖示)。升降驅動部使升降軸173升降。藉此，透過升降基板171及升降銷113，而基板保持部114作升降。然後，可使晶圓20從基板保持部114移動至基座台111上，或使晶圓20從基座台111之上移動至基板保持部114。A lifting substrate 171 is provided below the susceptor table 111. A guide shaft 167 is provided to communicate with the elevation substrate 171. The guide shaft 167 guides the elevation of the lift substrate 171. The plurality of lift pins 113 are provided on the lift substrate 171 in the vertical direction. The lift pin 113 penetrates the vertical direction of the outer peripheral portion of the base table 111. A substrate holding portion 114 is provided at an upper end of the lift pin 113. The substrate holding portion 114 extends in the center direction of the susceptor table 111 and holds the outer periphery of the wafer 20 . The lifting and lowering plate 171 is coupled to the upper end of the lifting shaft 173. The lifting shaft 173 passes through the bottom plate 169 and is coupled to a lifting drive unit (not shown). The elevation drive unit raises and lowers the elevation shaft 173. Thereby, the substrate holding portion 114 is lifted and lowered by the lift substrate 171 and the lift pin 113. Then, the wafer 20 can be moved from the substrate holding portion 114 to the susceptor table 111 or the wafer 20 can be moved from above the susceptor table 111 to the substrate holding portion 114.

在基座台111的下方，係設有擋環158。擋環158，係例如圓筒狀。基座台111的下方之空間與處理室145係作連通。在底板169之上，係透過導軸167，而水平支撐了排氣板165。在排氣板165，係設有排氣連通孔175。形成於排氣板165之上方的空間、及形成於排氣板165之下方的空間，係透過排氣連通孔175而連通。A retaining ring 158 is provided below the base table 111. The retaining ring 158 is, for example, cylindrical. The space below the susceptor table 111 is in communication with the processing chamber 145. Above the bottom plate 169, the exhaust plate 165 is horizontally supported by the guide shaft 167. An exhaust gas communication hole 175 is provided in the exhaust plate 165. A space formed above the exhaust plate 165 and a space formed below the exhaust plate 165 are communicated through the exhaust communication hole 175.

在底板169之中央，係連接著排氣管180。在排氣管180，係從上游側依序，設有：壓力檢測器(不圖示)、APC(Auto Pressure Controller)閥181、排氣裝置179。排氣裝置179，係以對於處理容器120內進行排氣的方式而構成。在排氣裝置179對於處理容器120內進行排氣時，基於來自壓力檢測器的壓力資訊而對於APC閥181的開度進行調整。藉此，處理容器120內的壓力被調整為既定壓力。主要，藉排氣管180及APC閥181，構成排氣系統。另外，亦可考慮使排氣裝置179包含於排氣系統中。In the center of the bottom plate 169, an exhaust pipe 180 is connected. The exhaust pipe 180 is provided with a pressure detector (not shown), an APC (Auto Pressure Controller) valve 181, and an exhaust device 179 in this order from the upstream side. The exhaust device 179 is configured to exhaust the inside of the processing container 120. When the exhaust device 179 exhausts the inside of the processing container 120, the opening degree of the APC valve 181 is adjusted based on the pressure information from the pressure detector. Thereby, the pressure in the processing container 120 is adjusted to a predetermined pressure. Mainly, the exhaust pipe 180 and the APC valve 181 constitute an exhaust system. In addition, it is also conceivable to include the exhaust device 179 in the exhaust system.

另外，即使反應管131與晶圓收容部190無法明確區別亦可。亦即，此等係作一體成型亦可。此情況下，電漿生成區域130、處理室145，係至少一部分或全部作重複亦可。Further, even if the reaction tube 131 and the wafer housing portion 190 cannot be clearly distinguished. That is, these systems can also be integrally formed. In this case, at least a part or all of the plasma generation region 130 and the processing chamber 145 may be repeated.

(控制部)(Control Department)

作為控制部之控制器170，係連接於：上述的質流控制器51b,52b、閥51a,52a、高頻電源144、頻率整合器146、RF感測器168、加熱器163、升降驅動部、壓力檢測器、APC閥181、及排氣裝置179等。控制器170，係以對於此等之動作進行控制的方式而構成。在控制器170，係連接著顯示部之顯示器172。顯示器172，係例如對於藉RF感測器168之反射波的監視結果等之資料進行顯示。The controller 170 as a control unit is connected to the mass flow controllers 51b and 52b, the valves 51a and 52a, the high-frequency power source 144, the frequency integrator 146, the RF sensor 168, the heater 163, and the elevation drive unit. , a pressure detector, an APC valve 181, an exhaust device 179, and the like. The controller 170 is configured to control the operations of these. In the controller 170, a display 172 of the display unit is connected. The display 172 is displayed, for example, on data such as the monitoring result of the reflected wave by the RF sensor 168.

(2)調溫氣體的流路(2) Flow path of temperature regulating gas

在以下，對於與調溫氣體的流路140相關的詳細構成，使用圖1及圖2而進行說明。圖2(a)，係往圖1之A-A’線的箭頭方向看的剖面圖，(b)，係遮蔽部之展開圖。在圖1及圖2中，實線的箭頭，係表示調溫氣體之流動。Hereinafter, the detailed configuration relating to the flow path 140 of the tempering gas will be described with reference to FIGS. 1 and 2 . Fig. 2 (a) is a cross-sectional view taken along the line A-A' of Fig. 1 in the direction of the arrow, and (b) is a developed view of the shielding portion. In Figs. 1 and 2, the solid arrows indicate the flow of the tempering gas.

在本實施形態中，係為了使處理容器120的溫度穩定化，調溫氣體沿著處理容器120的外壁而流動。流路140，係設於處理容器120與作為電漿生成部之諧振線圈132之間，沿著處理容器120的外壁而使調溫氣體作流動。並非所謂的自然對流，而是藉強制對流，使處理容器120的溫度穩定化。In the present embodiment, in order to stabilize the temperature of the processing container 120, the tempering gas flows along the outer wall of the processing container 120. The flow path 140 is provided between the processing container 120 and the resonance coil 132 as a plasma generating unit, and flows the temperature-regulating gas along the outer wall of the processing container 120. Rather than so-called natural convection, the temperature of the processing vessel 120 is stabilized by forced convection.

調溫氣體，係例如大氣。調溫氣體，係N2 或稀有氣體等之惰性氣體亦可。The tempering gas is, for example, the atmosphere. The temperature control gas may be an inert gas such as N 2 or a rare gas.

(導入孔)(introduction hole)

如圖1所示，在遮蔽部152，係設有導入孔(Air Intake Hole)152a。導入孔152a，係以對於流路140內將調溫氣體作導入的方式而構成。導入孔152a，係設於遮蔽部152的下端側。導入孔152a，係位於諧振線圈132的鉛直下。導入孔152a，係設於可動分接頭166之下，亦即設於諧振線圈132的下端部之更下。調溫氣體，係從比諧振線圈132鉛直下側而導入。換言之，調溫氣體，係 從比電漿生成區域130鉛直下側而導入。As shown in FIG. 1, an air intake hole 152a is provided in the shielding portion 152. The introduction hole 152a is configured to introduce a temperature control gas into the flow path 140. The introduction hole 152a is provided on the lower end side of the shielding portion 152. The introduction hole 152a is located vertically below the resonance coil 132. The introduction hole 152a is provided below the movable tap 166, that is, at the lower end of the resonant coil 132. The tempering gas is introduced from the lower side of the resonant coil 132. In other words, the temperature control gas, It is introduced from the lower side than the plasma generation region 130.

導入孔152a之個數、形狀、或配置等，係所需的調溫氣體的流量而設定。此外，此等係亦依後述之排出裝置188的排出能力而設定。The number, shape, arrangement, and the like of the introduction holes 152a are set by the flow rate of the required temperature control gas. Further, these are also set in accordance with the discharge capability of the discharge device 188 which will be described later.

如圖2(a)所示，導入孔152a，係設有複數個。複數個導入孔152a，係以均等的間隔而開設於流路140之中處理容器120的圓周方向。「處理容器120的圓周方向」，係從電漿處理裝置10的鉛直上方所看，處理容器120的圓周方向的意思。複數個導入孔152a之各者，係對於反應管131的中心方向將調溫氣體作導入。調溫氣體，係從複數個導入孔152a進入，以均等之流量及均等之流速，衝撞於處理容器120的外壁。藉此，處理容器120，係易於藉調溫氣體而於圓周方向上均等作冷卻。As shown in Fig. 2(a), a plurality of introduction holes 152a are provided. The plurality of introduction holes 152a are formed in the circumferential direction of the processing container 120 in the flow path 140 at equal intervals. The "circumferential direction of the processing container 120" means the circumferential direction of the processing container 120 as seen from the vertical upper side of the plasma processing apparatus 10. Each of the plurality of introduction holes 152a introduces a tempering gas into the center direction of the reaction tube 131. The tempering gas enters from the plurality of introduction holes 152a, and collides with the outer wall of the processing container 120 at an equal flow rate and an equal flow rate. Thereby, the processing container 120 is easily cooled by the temperature adjustment gas in the circumferential direction.

如以上所述，遮蔽部152，係以包圍作為電漿生成部之諧振線圈132的外側之方式而設。複數個導入孔152a，係設於遮蔽部152。流路140的一部分，係至少設於處理容器120與遮蔽部152之間。As described above, the shielding portion 152 is provided to surround the outer side of the resonant coil 132 as the plasma generating portion. A plurality of introduction holes 152a are provided in the shielding portion 152. A part of the flow path 140 is provided between at least the processing container 120 and the shielding portion 152.

如圖2(b)所示，導入孔152a的剖面形狀，係例如圓形。導入孔152a的直徑、個數及配置等，係依所需的排出裝置188之排出量而設計。例如，調溫氣體的流量需要3m3 /min程度的情況下，調溫氣體之流速係估計為1~3m/sec程度。此情況下，例如，導入孔152a的直徑，係20mm以上、40mm以下。導入孔152a之個數，係例如10個以上、100個以下，較佳係15個以上、50個以 下。複數個導入孔152a之間隔Wa，係例如10mm以上、40mm以下。從遮蔽部152的下端至導入孔152a的中心為止的高度Ha，係例如遮蔽部152的高度Hs之1/10倍程度，例如20mm以上、50mm以下。另外，遮蔽部152係接於底板148，故從遮蔽部152的下端至導入孔152a的中心為止的高度Ha，係例如等於從底板148至導入孔152a的中心為止的高度。As shown in Fig. 2(b), the cross-sectional shape of the introduction hole 152a is, for example, a circular shape. The diameter, number, arrangement, and the like of the introduction holes 152a are designed in accordance with the discharge amount of the discharge device 188 required. For example, when the flow rate of the tempering gas needs to be about 3 m 3 /min, the flow rate of the tempering gas is estimated to be about 1 to 3 m/sec. In this case, for example, the diameter of the introduction hole 152a is 20 mm or more and 40 mm or less. The number of the introduction holes 152a is, for example, 10 or more and 100 or less, and preferably 15 or more and 50 or less. The interval Wa of the plurality of introduction holes 152a is, for example, 10 mm or more and 40 mm or less. The height Ha from the lower end of the shielding portion 152 to the center of the introduction hole 152a is, for example, about 1/10 times the height Hs of the shielding portion 152, for example, 20 mm or more and 50 mm or less. Further, since the shielding portion 152 is coupled to the bottom plate 148, the height Ha from the lower end of the shielding portion 152 to the center of the introduction hole 152a is, for example, equal to the height from the bottom plate 148 to the center of the introduction hole 152a.

在遮蔽部152，係設有：可動分接頭162用的開口162a、可動分接頭166用的開口166a。從可動分接頭166用的開口166a，係亦引出固定接地164。開口162a，係設於可動分接頭162的可動範圍。開口166a，係設於可動分接頭166的可動範圍。The shielding portion 152 is provided with an opening 162a for the movable tap 162 and an opening 166a for the movable tap 166. From the opening 166a for the movable tap 166, the fixed ground 164 is also led out. The opening 162a is provided in a movable range of the movable tap 162. The opening 166a is provided in a movable range of the movable tap 166.

(導氣部)(air guide)

在處理容器120與諧振線圈132之間，係設有導氣部(Air Flow Guide)153。導氣部153，係包圍著處理容器120的外側。導氣部153，係以從導入孔152a對於處理容器120與諧振線圈132之間將調溫氣體作導引的方式而構成。流路140的一部分，係形成於處理容器120與導氣部153之間。調溫氣體，係高效率流於處理容器120與諧振線圈132之間。導氣部153，係固定於底板148、反應管131、或遮蔽部152。An air flow guide 153 is provided between the processing container 120 and the resonant coil 132. The air guiding portion 153 surrounds the outer side of the processing container 120. The air guiding portion 153 is configured to guide the temperature control gas between the processing container 120 and the resonance coil 132 from the introduction hole 152a. A part of the flow path 140 is formed between the processing container 120 and the air guiding portion 153. The tempering gas flows between the processing vessel 120 and the resonant coil 132 with high efficiency. The air guiding portion 153 is fixed to the bottom plate 148, the reaction tube 131, or the shielding portion 152.

例如，導氣部153，係具有如以下之形狀。以包圍處理容器120的方式，設有中間部153b。中間部 153b係例如圓筒狀。在中間部153b的導入孔152a側，係設有凸緣部153a。凸緣部153a，係接於中間部153b的下端。凸緣部153a，係以對於調溫氣體漏於導氣部153與遮蔽部152之間的情況進行抑制的方式而設。凸緣部153a，係設於導入孔152a與諧振線圈132的下端之間。凸緣部153a，係設於比可動分接頭166用的開口166a還下方。凸緣部153a，係從中間部153b於徑向往外側作擴張。凸緣部153a之中遮蔽部152側的端部，係沿著遮蔽部152之內側的形狀而略圓弧狀作設置。調溫氣體，係並非導氣部153與遮蔽部152之間，而是主要高速流於導氣部153與處理容器120之間。藉此，處理容器120係被高效率作冷卻。For example, the air guide portion 153 has a shape as follows. An intermediate portion 153b is provided to surround the processing container 120. Middle part 153b is, for example, a cylindrical shape. A flange portion 153a is provided on the introduction hole 152a side of the intermediate portion 153b. The flange portion 153a is coupled to the lower end of the intermediate portion 153b. The flange portion 153a is provided to suppress the leakage of the temperature control gas between the air guide portion 153 and the shielding portion 152. The flange portion 153a is provided between the introduction hole 152a and the lower end of the resonance coil 132. The flange portion 153a is provided below the opening 166a for the movable tap 166. The flange portion 153a is expanded outward in the radial direction from the intermediate portion 153b. The end portion of the flange portion 153a on the side of the shielding portion 152 is provided in a substantially arc shape along the shape of the inner side of the shielding portion 152. The tempering gas is not between the gas guiding portion 153 and the shielding portion 152, but flows mainly between the gas guiding portion 153 and the processing container 120 at a high speed. Thereby, the processing container 120 is cooled with high efficiency.

在中間部153b的凸緣部153a之相反側，係設有凸緣部153c。凸緣部153c，係接於中間部153b的上端。凸緣部153c，係設於比可動分接頭162用的開口162a還上方。調溫氣體，係並非導氣部153與遮蔽部152之間，而是主要從導氣部153與處理容器120之間作排出。A flange portion 153c is provided on the opposite side of the flange portion 153a of the intermediate portion 153b. The flange portion 153c is coupled to the upper end of the intermediate portion 153b. The flange portion 153c is provided above the opening 162a for the movable tap 162. The tempering gas is not between the gas guiding portion 153 and the shielding portion 152, but is mainly discharged between the gas guiding portion 153 and the processing container 120.

主要，藉凸緣部153a及中間部153b，構成了導氣部153。另外，亦可考慮使凸緣部152c包含於導氣部153中。此外，凸緣部153a、中間部153b及凸緣部152c，係亦可未明確作區分。Mainly, the air guide portion 153 is configured by the flange portion 153a and the intermediate portion 153b. Further, it is also conceivable to include the flange portion 152c in the air guide portion 153. Further, the flange portion 153a, the intermediate portion 153b, and the flange portion 152c may not be clearly distinguished.

於此，使處理容器120的反應管131之外徑為、導氣部153的內徑(中間部153b的內徑)為、 遮蔽部152的內徑為時，處理容器120與導氣部153之間隔dcg 、及導氣部153與遮蔽部152之間隔dgs ，係分別利用以下的式子而求出。另外，導氣部153的厚度，係作成相對於內徑及外徑而可無視之程度，導氣部153的內徑，係作成等於導氣部153的外徑。Here, the outer diameter of the reaction tube 131 of the processing container 120 is The inner diameter of the air guiding portion 153 (the inner diameter of the intermediate portion 153b) is The inner diameter of the shielding portion 152 is The distance d cg between the processing container 120 and the air guiding portion 153 and the distance d gs between the air guiding portion 153 and the shielding portion 152 are obtained by the following equations. Further, the thickness of the air guiding portion 153 is made irrespective of the inner diameter and the outer diameter, and the inner diameter of the air guiding portion 153 is equal to the outer diameter of the air guiding portion 153.

流路140之寬度越窄，調溫氣體之流速係變越高。調溫氣體之流速越高，調溫氣體與處理容器120之間的傳熱係數係變越高。因此，處理容器120與導氣部153之間隔dcg ，係較佳為窄於導氣部153與遮蔽部152之間隔dgs 。亦即，較佳為dcg <dgs 。在處理容器120與導氣部153之間的調溫氣體之流速，係變得比在流路140之其他部分的調溫氣體之流速更高。藉此，調溫氣體與處理容器120之間的傳熱係數會提升。The narrower the width of the flow path 140, the higher the flow rate of the tempering gas becomes. The higher the flow rate of the tempering gas, the higher the heat transfer coefficient between the tempering gas and the processing vessel 120. Therefore, the interval d cg between the processing container 120 and the air guiding portion 153 is preferably narrower than the interval d gs between the air guiding portion 153 and the shielding portion 152. That is, d cg < d gs is preferred. The flow rate of the tempering gas between the processing container 120 and the air guiding portion 153 becomes higher than the flow rate of the tempering gas in other portions of the flow path 140. Thereby, the heat transfer coefficient between the temperature control gas and the processing container 120 is increased.

另外，不進行調溫氣體之強制對流的情況下，在遮蔽部152與處理容器120之間的密閉空間，係可能產生自然對流。自然對流的情況下，處理容器120、密閉空間及處理容器120之間的傳熱係數，係係估計為5W/m2 K以上、20W/m2 K以下。Further, when forced convection of the tempering gas is not performed, natural convection may occur in the sealed space between the shielding portion 152 and the processing container 120. In the case of natural convection, the heat transfer coefficient between the processing container 120, the sealed space, and the processing container 120 is estimated to be 5 W/m 2 K or more and 20 W/m 2 K or less.

另一方面，如本實施形態的方式進行藉調溫氣體之強制對流的情況下，調溫氣體與處理容器120之間的傳熱係數，係估計為25W/m2 K以上、250W/m2 K以下。 要使處理容器120的溫度穩定化，則處理容器120的傳熱係數，係期望為至少數十W/m2 K以上。流路140之中處理容器120與遮蔽部152之間的部分之流速，係需要為數十m/sec以上。要符合此要件，則導氣部153與處理容器120之間隔dcg ，係較佳為例如2mm以上、5mm以下。藉此，可實現上述之傳熱係數。On the other hand, when the forced convection of the temperature control gas is performed as in the embodiment of the present embodiment, the heat transfer coefficient between the temperature control gas and the processing container 120 is estimated to be 25 W/m 2 K or more and 250 W/m 2 . Below K. In order to stabilize the temperature of the processing container 120, the heat transfer coefficient of the processing container 120 is desirably at least several tens of W/m 2 K or more. The flow rate of the portion between the processing container 120 and the shielding portion 152 in the flow path 140 needs to be several tens of m/sec or more. In order to comply with this requirement, the distance d cg between the air guide portion 153 and the processing container 120 is preferably, for example, 2 mm or more and 5 mm or less. Thereby, the above heat transfer coefficient can be achieved.

此外，使凸緣部153a之中遮蔽部152側的端部之直徑為時，凸緣部153a的端部與遮蔽部152之間隔dfs (亦即，凸緣部153a與遮蔽部152之間的空隙之間隔dfs )，係利用以下的式子而求出。Further, the diameter of the end portion of the flange portion 153a on the side of the shielding portion 152 is made The distance d fs between the end portion of the flange portion 153a and the shielding portion 152 (that is, the interval d fs between the gap between the flange portion 153a and the shielding portion 152) is obtained by the following expression.

凸緣部153a的端部與遮蔽部152之間隔dfs ，係相較於處理容器120與導氣部153之間隔dcg 之下小成可無視的程度。亦即，dfs <<dcg 。藉此，可對於調溫氣體漏於導氣部153與遮蔽部152之間的情況進行抑制。The distance d fs between the end portion of the flange portion 153a and the shielding portion 152 is smaller than the distance d cg between the processing container 120 and the air guiding portion 153. That is, d fs <<d cg . Thereby, it can suppress that the temperature control gas leaks between the air guide part 153 and the shielding part 152.

凸緣部153a，係位於比導入孔152a還上方。從底板148至凸緣部153a為止的高度，係例如20mm以上、50mm以下。The flange portion 153a is located above the introduction hole 152a. The height from the bottom plate 148 to the flange portion 153a is, for example, 20 mm or more and 50 mm or less.

導氣部153的厚度，係例如2mm以上、5mm以下。導氣部153的厚度為上述範圍，使得諧振線圈132與遮蔽部152之間的電容容量Cp，係不易受到導氣部153被***的情況之影響。此外，在電漿處理時，導氣部153 不易因來自處理容器120的熱而變化。The thickness of the air guiding portion 153 is, for example, 2 mm or more and 5 mm or less. The thickness of the air guiding portion 153 is in the above range, so that the capacitance Cp between the resonant coil 132 and the shielding portion 152 is less likely to be affected by the insertion of the air guiding portion 153. Further, at the time of plasma treatment, the air guiding portion 153 It is not easy to vary due to heat from the processing vessel 120.

導氣部153，係藉例如低電容率的材料而形成。例如，導氣部153的材料之電容率，係低於反應管131的材料之電容率。反應管131藉石英(電容率3.8)而形成之情況下，導氣部153的電容率，係例如3.8以下。藉此，諧振線圈132與遮蔽部152之間的電容容量Cp，係變得不易受到導氣部153被***的情況之影響。The gas guiding portion 153 is formed of, for example, a material having a low permittivity. For example, the permittivity of the material of the gas guiding portion 153 is lower than the permittivity of the material of the reaction tube 131. When the reaction tube 131 is formed of quartz (capacitance: 3.8), the permittivity of the gas guiding portion 153 is, for example, 3.8 or less. Thereby, the capacitance Cp between the resonant coil 132 and the shielding portion 152 is less likely to be affected by the insertion of the air guiding portion 153.

此外，導氣部153，係藉例如絕緣性的材料而形成亦可。與其相反，導氣部153具有導電性之情況下，反應管131之內部，係藉導氣部153而被電性遮蔽。導氣部153藉絕緣性的材料而形成，使得反應管131內的電漿生成變得不易受阻。Further, the air guiding portion 153 may be formed of, for example, an insulating material. On the contrary, when the gas guiding portion 153 has electrical conductivity, the inside of the reaction tube 131 is electrically shielded by the gas guiding portion 153. The gas guiding portion 153 is formed of an insulating material, so that generation of plasma in the reaction tube 131 becomes less likely to be hindered.

此外，導氣部153，係藉例如具有耐熱性之材料而形成亦可。導氣部153，係比諧振線圈132靠近反應管131。導氣部153，係可加熱至例如200℃程度。導氣部153藉高分子材料而形成情況下，導氣部153的材料之玻璃轉移溫度，係例如200℃以上。藉此，在電漿處理時，導氣部153的形狀係被維持。Further, the air guide portion 153 may be formed of, for example, a material having heat resistance. The gas guiding portion 153 is closer to the reaction tube 131 than the resonance coil 132. The air guiding portion 153 can be heated to, for example, about 200 °C. When the air guiding portion 153 is formed of a polymer material, the glass transition temperature of the material of the air guiding portion 153 is, for example, 200 ° C or higher. Thereby, the shape of the air guide part 153 is maintained at the time of plasma processing.

具體而言，導氣部153，係藉聚四氟乙烯(註冊商標)、PTFE(聚四氟乙烯)、PCTFE(聚三氟氯乙烯)、PEEK(聚醚醚酮)、POM(多聚甲醛)、聚醯亞胺(註冊商標)、PBI(聚苯并咪唑)中的任一材料而形成。此情況下，導氣部153係符合上述的電容率、絕緣性及耐熱性的要件。Specifically, the gas guiding portion 153 is made of polytetrafluoroethylene (registered trademark), PTFE (polytetrafluoroethylene), PCTFE (polychlorotrifluoroethylene), PEEK (polyether ether ketone), POM (paraformaldehyde). ) formed by any of polyamidiamine (registered trademark) and PBI (polybenzimidazole). In this case, the air guide portion 153 meets the above requirements for permittivity, insulation, and heat resistance.

(中間開口)(middle opening)

在比至少諧振線圈132上方，係設有中間開口156。例如，中間開口156，係設於頂板154之上。中間開口156，係設於流路140之中諧振線圈132與後述之排出孔185之間。中間開口156，係連接：在處理容器120以及遮蔽部152之間的部分、及後述之氣體緩衝部182。中間開口156，係設於例如反應管131之圓筒部分的上端的外側。An intermediate opening 156 is provided above the at least resonant coil 132. For example, the intermediate opening 156 is attached to the top plate 154. The intermediate opening 156 is provided between the resonant coil 132 and the discharge hole 185, which will be described later, in the flow path 140. The intermediate opening 156 is connected to a portion between the processing container 120 and the shielding portion 152 and a gas buffer portion 182 which will be described later. The intermediate opening 156 is provided on the outer side of the upper end of the cylindrical portion of the reaction tube 131, for example.

另外，反應管131，係具有從圓筒部分於徑向作擴張之擴張部(符號不圖示)的情況下，於擴張部亦設有中間開口156亦可。此情況下，中間開口156，係連通於反應管131之擴張部與頂板154。Further, in the case where the reaction tube 131 has an expanded portion (not shown) that expands in the radial direction from the cylindrical portion, the intermediate portion 156 may be provided in the expanded portion. In this case, the intermediate opening 156 is in communication with the expansion portion of the reaction tube 131 and the top plate 154.

中間開口156，係例如設有複數個。複數個中間開口156，係以環狀包圍處理容器120的方式而設。複數個中間開口156，係以均等的間隔而開設於流路140之中處理容器120的圓周方向。複數個中間開口156之各者，係從例如電漿處理裝置10的鉛直上方所看，設於與複數個導入孔152a之各者作重疊的位置。調溫氣體，係從複數個導入孔152a而導入，流向複數個中間開口156。複數個中間開口156之各者，係略圓形。The intermediate opening 156 is provided, for example, in plural. A plurality of intermediate openings 156 are provided in such a manner as to surround the processing container 120 in a ring shape. A plurality of intermediate openings 156 are formed in the circumferential direction of the processing container 120 in the flow path 140 at equal intervals. Each of the plurality of intermediate openings 156 is provided at a position overlapping with each of the plurality of introduction holes 152a as viewed from above the vertical direction of the plasma processing apparatus 10. The tempering gas is introduced from a plurality of introduction holes 152a and flows to a plurality of intermediate openings 156. Each of the plurality of intermediate openings 156 is slightly rounded.

(關於氣體緩衝部)(about gas buffer)

在處理容器120的鉛直上方，係設有氣體緩衝部 (Air Pumping Box)182。氣體緩衝部182，係配置於頂板154之上。氣體緩衝部182，係設於流路140之中間開口156與後述之排出孔185之間。氣體緩衝部182，係設於流路140之中比諧振線圈132靠下游測(後述之排出孔185側)。A gas buffer portion is provided vertically above the processing container 120. (Air Pumping Box) 182. The gas buffer portion 182 is disposed on the top plate 154. The gas buffer portion 182 is provided between the intermediate opening 156 of the flow path 140 and a discharge hole 185 to be described later. The gas buffer unit 182 is disposed downstream of the resonance coil 132 in the flow path 140 (on the side of the discharge hole 185 to be described later).

氣體緩衝部182，係連接於複數個中間開口156的全部。氣體緩衝部182，係以不會對於調溫氣體之進行造成阻礙的方式而設計。氣體緩衝部182內之電導，係大於比氣體緩衝部182靠導入孔152a側之電導。氣體緩衝部182內之容積，係廣於導氣部153與處理容器120之間的容積。The gas buffer portion 182 is connected to all of the plurality of intermediate openings 156. The gas buffer unit 182 is designed so as not to hinder the progress of the temperature control gas. The conductance in the gas buffer portion 182 is larger than the conductance on the side of the introduction hole 152a than the gas buffer portion 182. The volume in the gas buffer portion 182 is wider than the volume between the air guide portion 153 and the processing container 120.

氣體緩衝部182，係圓柱、多角柱、圓錐或多角錐。氣體緩衝部182之底部的直徑，係例如450mm以上、550mm以下。The gas buffer portion 182 is a cylinder, a polygonal column, a cone or a polygonal pyramid. The diameter of the bottom of the gas buffer portion 182 is, for example, 450 mm or more and 550 mm or less.

氣體緩衝部182的高度，係高於中間開口156的直徑。氣體緩衝部182的高度，係例如50mm以上、200mm以下。藉此，在調溫氣體從中間開口156流入氣體緩衝部182內時，朝向排出孔185之流動難以受阻。The height of the gas buffer portion 182 is higher than the diameter of the intermediate opening 156. The height of the gas buffer portion 182 is, for example, 50 mm or more and 200 mm or less. Thereby, when the temperature control gas flows into the gas buffer portion 182 from the intermediate opening 156, the flow toward the discharge hole 185 is hardly hindered.

(排出孔)(discharge hole)

在處理容器120的鉛直上方，係設有排出孔185。排出孔185，係以從流路140將調溫氣體作排出的方式而構成。排出孔185，係設於氣體緩衝部182的中間開口156之相反側。排出孔185，係從電漿處理裝置10的鉛直上 方所看，配置於氣體緩衝部182的中央。複數個中間開口156，係從排出孔185以均等之距離作配置。較佳者，複數個中間開口156，係以從電漿處理裝置10的鉛直上方所見成為從氣體緩衝部182的中心點對稱的方式而配置。調溫氣體，係從電漿處理裝置10的鉛直上方所看，從各個的中間開口156朝向處理容器120的中央而徑向流動。藉此，在沿著處理容器120的外壁之部分的調溫氣體之流速，係易於在圓周方向上變均勻。A discharge hole 185 is provided vertically above the processing container 120. The discharge hole 185 is configured to discharge the tempering gas from the flow path 140. The discharge hole 185 is provided on the opposite side of the intermediate opening 156 of the gas buffer portion 182. The discharge hole 185 is from the vertical direction of the plasma processing apparatus 10 It is disposed in the center of the gas buffer portion 182 as seen from the side. A plurality of intermediate openings 156 are disposed from the discharge holes 185 at equal distances. Preferably, the plurality of intermediate openings 156 are arranged to be symmetrical from the center point of the gas buffer portion 182 as seen from the vertical upper side of the plasma processing apparatus 10. The temperature-regulating gas flows radially from the center opening 156 toward the center of the processing container 120 as viewed from the vertical upper side of the plasma processing apparatus 10. Thereby, the flow velocity of the temperature control gas along the portion of the outer wall of the processing container 120 is apt to become uniform in the circumferential direction.

(排出管及排出裝置)(discharge pipe and discharge device)

在排出孔185，係連接著排出管186。在排出管186之排出孔185的相反側，係連接著排出裝置188。排出裝置188，係以在流路140內形成從導入孔152a朝向排出孔185之流路140的方式，將調溫氣體從排出孔185強制排出。另外，排出裝置188，係無需當作電漿處理裝置10的專屬品而設。排出裝置188，係亦可為設於無塵室之共用導管。A discharge pipe 186 is connected to the discharge hole 185. On the opposite side of the discharge orifice 185 of the discharge pipe 186, a discharge device 188 is connected. The discharge device 188 forcibly discharges the temperature control gas from the discharge hole 185 so that the flow path 140 from the introduction hole 152a toward the discharge hole 185 is formed in the flow path 140. In addition, the discharge device 188 need not be provided as a special product of the plasma processing apparatus 10. The discharge device 188 may also be a common conduit provided in the clean room.

在排出管186，係設有調整閥(Control Damper)184。調整閥184，係以對於流動於排出管186之調溫氣體的流量進行調整的方式而構成。調整閥184，係在固定量的調溫氣體被排出時，對於調溫氣體的流量進行衰減(dumping)。調整閥184，係所謂的阻尼器。A control valve 184 is provided in the discharge pipe 186. The adjustment valve 184 is configured to adjust the flow rate of the tempering gas flowing through the discharge pipe 186. The adjustment valve 184 is configured to reduce the flow rate of the tempering gas when a fixed amount of tempering gas is discharged. The adjustment valve 184 is a so-called damper.

流動於流路140內之調溫氣體的流量，係例如1m3 /min以上、10m3 /min以下。排出孔185的內徑，係 例如50mm以上、100mm以下。此外，排出管186的內徑，係例如等於排出孔185的內徑。The flow rate of the tempering gas flowing in the flow path 140 is, for example, 1 m 3 /min or more and 10 m 3 /min or less. The inner diameter of the discharge hole 185 is, for example, 50 mm or more and 100 mm or less. Further, the inner diameter of the discharge pipe 186 is, for example, equal to the inner diameter of the discharge hole 185.

(調溫氣體的流路)(flow path of thermostat gas)

例如，藉複數個導入孔152a、導氣部153、複數個中間開口156、氣體緩衝部182及排出孔185，構成了調溫氣體的流路140。調溫氣體係依此等之順序而流動。另外，亦可考慮使排出管186、調整閥184及排出裝置188包含於流路140中。For example, the plurality of introduction holes 152a, the air guide portion 153, the plurality of intermediate openings 156, the gas buffer portion 182, and the discharge holes 185 constitute a flow path 140 for the temperature control gas. The tempering gas system flows in this order. Further, it is also conceivable to include the discharge pipe 186, the adjustment valve 184, and the discharge device 188 in the flow path 140.

複數個導入孔152a，係以均等的間隔而開設於流路140之中處理容器120的圓周方向。調溫氣體，係從複數個導入孔152a於圓周方向上均等作導入。藉此，處理容器120，係易於藉調溫氣體而於圓周方向上均等作冷卻。The plurality of introduction holes 152a are formed in the circumferential direction of the processing container 120 in the flow path 140 at equal intervals. The tempering gas is introduced equally from the plurality of introduction holes 152a in the circumferential direction. Thereby, the processing container 120 is easily cooled by the temperature adjustment gas in the circumferential direction.

在處理容器120與諧振線圈132之間，係以包圍處理容器120的外側之方式，設有導氣部153。藉此，流路140，係藉導氣部153，於沿著處理容器120之部分被窄化。調溫氣體，係高速流於處理容器120與諧振線圈132之間。藉此，促進了處理容器120的冷卻。An air guiding portion 153 is provided between the processing container 120 and the resonant coil 132 so as to surround the outer side of the processing container 120. Thereby, the flow path 140 is narrowed by the air guide portion 153 along the portion along the processing container 120. The tempering gas flows between the processing container 120 and the resonant coil 132 at a high speed. Thereby, the cooling of the processing container 120 is promoted.

複數個中間開口156，係設於諧振線圈132與排出孔185之間。複數個中間開口156，係以均等的間隔而開設於流路140之中處理容器120的圓周方向。調溫氣體，係從複數個導入孔152a而導入，流向複數個中間開口156。在導入孔152a與中間開口156之間，調溫氣體 的流量及流速係於圓周方向上成為均等。藉此，處理容器120，係易於藉調溫氣體而於圓周方向上均等作冷卻。A plurality of intermediate openings 156 are disposed between the resonant coil 132 and the discharge aperture 185. A plurality of intermediate openings 156 are formed in the circumferential direction of the processing container 120 in the flow path 140 at equal intervals. The tempering gas is introduced from a plurality of introduction holes 152a and flows to a plurality of intermediate openings 156. Between the introduction hole 152a and the intermediate opening 156, the temperature control gas The flow rate and flow rate are equal in the circumferential direction. Thereby, the processing container 120 is easily cooled by the temperature adjustment gas in the circumferential direction.

氣體緩衝部182，係設於中間開口156與排出孔185之間。氣體緩衝部182內之電導，係大於導入孔152a與中間開口156之間的電導。藉此，在調溫氣體流入氣體緩衝部182內時，朝向排出孔185之流動難以受阻。The gas buffer portion 182 is provided between the intermediate opening 156 and the discharge hole 185. The conductance in the gas buffer portion 182 is greater than the conductance between the introduction hole 152a and the intermediate opening 156. Thereby, when the temperature-regulating gas flows into the gas buffer portion 182, the flow toward the discharge hole 185 is hardly hindered.

排出孔185，係設於氣體緩衝部182的中間開口156之相反側。排出孔185，係從電漿處理裝置10的鉛直上方所看，僅配置了一個於複數個中間開口156的中央。流路140之中導入孔152a與中間開口156之間的部分之流速，係於處理容器120的圓周方向上成為均勻。因此，處理容器120，係易於在圓周方向上均等作冷卻。The discharge hole 185 is provided on the opposite side of the intermediate opening 156 of the gas buffer portion 182. The discharge holes 185 are disposed only in the center of the plurality of intermediate openings 156 as seen from the vertical upper side of the plasma processing apparatus 10. The flow velocity of the portion between the introduction hole 152a and the intermediate opening 156 in the flow path 140 is uniform in the circumferential direction of the processing container 120. Therefore, the processing container 120 is easily cooled uniformly in the circumferential direction.

以此方式，調溫氣體，係從導入孔152a導入，通過處理容器120的外壁，而從排出孔185排出。於此，調溫氣體，係流動於與處理氣體為相反的方向。調溫氣體，係從處理容器120的下方朝向上方而流動。亦即，調溫氣體，係從處理容器120之排氣系統側朝向處理容器120之供氣系統側而流動。流路140的一部分，係形成於反應管131之長邊方向。處理容器120的外壁，係藉調溫氣體而作冷卻。與其相反，調溫氣體係藉處理容器120的外壁而暖化。調溫氣體，係可流動於與藉此熱之上升氣流相同的方向。In this manner, the tempering gas is introduced from the introduction hole 152a, and is discharged from the discharge hole 185 by the outer wall of the processing container 120. Here, the tempering gas flows in a direction opposite to the processing gas. The tempering gas flows upward from the lower side of the processing container 120. That is, the tempering gas flows from the exhaust system side of the processing container 120 toward the gas supply system side of the processing container 120. A part of the flow path 140 is formed in the longitudinal direction of the reaction tube 131. The outer wall of the processing vessel 120 is cooled by a tempering gas. In contrast, the tempering gas system is warmed by the outer wall of the processing vessel 120. The tempering gas is flowable in the same direction as the rising gas stream by which it is heated.

(調溫氣體的控制)(Control of temperature control gas)

在調整閥184，係連接著作為控制部之控制器170。控制器170，係以對於調整閥184之開度進行調整而對於調溫氣體的流量進行控制的方式而構成。例如處理容器120的溫度低於既定的溫度時，控制器170係對於調整閥184的開度作縮小。藉此，處理容器120的溫度會上升至既定的溫度。另一方面，處理容器120的溫度高於既定的溫度時，控制器170係對於調整閥184的開度作加大。藉此，處理容器120的溫度係下降至既定的溫度。以此方式，處理容器120的溫度，係維持於既定的溫度。In the adjustment valve 184, the controller 170, which is a control unit, is connected. The controller 170 is configured to control the flow rate of the temperature control gas by adjusting the opening degree of the adjustment valve 184. For example, when the temperature of the processing container 120 is lower than a predetermined temperature, the controller 170 reduces the opening degree of the adjustment valve 184. Thereby, the temperature of the processing vessel 120 rises to a predetermined temperature. On the other hand, when the temperature of the processing container 120 is higher than a predetermined temperature, the controller 170 increases the opening degree of the regulating valve 184. Thereby, the temperature of the processing vessel 120 is lowered to a predetermined temperature. In this manner, the temperature of the processing vessel 120 is maintained at a predetermined temperature.

另外，此處所稱之「處理容器120的溫度」，係包含處理容器120的外壁之溫度、處理容器120的內部之溫度的意思。此外，此處所稱之「既定的溫度」，係供於電漿處理的速度或電漿處理的程度成為既定的速度或既定的程度所用之固定的溫度範圍即可。The term "temperature of the processing container 120" as used herein means the temperature of the outer wall of the processing container 120 and the temperature inside the processing container 120. Further, the "established temperature" referred to herein may be a fixed temperature range for the speed at which the plasma treatment or the degree of plasma treatment is a predetermined speed or a predetermined degree.

在流路140，係設有溫度測定部183。溫度測定部183，係貫通例如遮蔽部152，而接於處理容器120。溫度測定部183，係貫通遮蔽部152而接於反應管131的外壁。溫度測定部183，係以對於處理容器120的溫度作測定的方式而構成。溫度測定部183，係配置於比流路140之諧振線圈132靠下游測。溫度測定部183，係例如K型之熱電偶(TC)、或白金電阻式溫度感測器(RTD)。A temperature measuring unit 183 is provided in the flow path 140. The temperature measuring unit 183 is connected to the processing container 120 so as to pass through the shielding portion 152, for example. The temperature measuring unit 183 is connected to the outer wall of the reaction tube 131 through the shielding portion 152. The temperature measuring unit 183 is configured to measure the temperature of the processing container 120. The temperature measuring unit 183 is disposed downstream of the resonant coil 132 of the flow path 140. The temperature measuring unit 183 is, for example, a K-type thermocouple (TC) or a platinum resistance temperature sensor (RTD).

溫度測定部183，係以藉彈簧構造以固定之力 對於處理容器120按壓的方式而設置亦可。即使設置狀態因熱脹而變化，仍保持了溫度測定部183與處理容器120之接觸。藉此，溫度測定部183係可穩定對於處理容器120的溫度作測定。The temperature measuring unit 183 is configured to be fixed by a spring. It is also possible to provide a method of pressing the processing container 120. Even if the installation state changes due to thermal expansion, the temperature measuring portion 183 is kept in contact with the processing container 120. Thereby, the temperature measuring unit 183 can stably measure the temperature of the processing container 120.

作為控制部之控制器170，係連接於溫度測定部183。控制器170，係以基於來自溫度測定部183的溫度資訊而對於調整閥184進行控制的方式而構成。處理容器120的溫度，係維持於既定的溫度。The controller 170 as a control unit is connected to the temperature measuring unit 183. The controller 170 is configured to control the adjustment valve 184 based on the temperature information from the temperature measuring unit 183. The temperature of the processing vessel 120 is maintained at a predetermined temperature.

(3)電漿處理方法(3) Plasma processing method

圖3，係對於本發明的一實施形態相關之電漿處理方法進行繪示的流程圖。使用圖3，而作為半導體裝置之製程的一程序，對於本實施形態相關之電漿處理程序作說明。在以下，係例如，說明有關於對於塗布於晶圓20上之抗蝕膜進行灰化的情況。電漿處理程序，係藉上述之電漿處理裝置10而實施。在下述之說明中，電漿處理裝置10的各部之動作係受控於控制器170。Fig. 3 is a flow chart showing a plasma processing method according to an embodiment of the present invention. The plasma processing program according to the present embodiment will be described as a procedure of the process of the semiconductor device using FIG. Hereinafter, for example, a case will be described in which ashing of a resist film applied on the wafer 20 is performed. The plasma processing procedure is carried out by the above-described plasma processing apparatus 10. In the following description, the operations of the various parts of the plasma processing apparatus 10 are controlled by the controller 170.

(傳送盒搬入)(transfer box is moved in)

對於電漿處理裝置10之預抽室(不圖示)，搬送具有例如25個的晶圓20之傳送盒(不圖示)。在各個的晶圓20之處理面之上，係塗布有例如抗蝕膜(S101)。A transfer cassette (not shown) having, for example, 25 wafers 20 is transported to a pre-extraction chamber (not shown) of the plasma processing apparatus 10. On the processing surface of each wafer 20, for example, a resist film is applied (S101).

(調溫氣流開始)(the temperature control air flow starts)

使排出裝置188動作，開始將流路140內的調溫氣體作排出。調溫氣體，係從在處理容器120的圓周方向上以均等的間隔而開設之導入孔152a流入流路140內。控制器170，係基於來自溫度測定部183的溫度資訊，而對於調整閥184之開度進行調整，對於調溫氣體的流量進行控制。例如開始時等處理容器120的溫度低於既定的溫度時，控制器170係對於調整閥184的開度作縮小。或者，調溫氣體的流量係設成小的。另外，調溫氣體的流量控制，係在到例如電漿處理程序結束為止之間，接續進行(S102)。The discharge device 188 is operated to start the discharge of the tempering gas in the flow path 140. The tempering gas flows into the flow path 140 from the introduction holes 152a which are opened at equal intervals in the circumferential direction of the processing container 120. The controller 170 adjusts the opening degree of the adjustment valve 184 based on the temperature information from the temperature measuring unit 183, and controls the flow rate of the temperature control gas. For example, when the temperature of the processing container 120 at the beginning or the like is lower than a predetermined temperature, the controller 170 reduces the opening degree of the adjustment valve 184. Alternatively, the flow rate of the tempering gas is set to be small. Further, the flow rate control of the tempering gas is continued until, for example, the end of the plasma processing program (S102).

(晶圓搬入)(wafer loading)

接著，搬送部，係在預抽室，將一個的晶圓20拾取，而搬入至處理室145內。藉升降軸173使升降銷113上升，而將晶圓20載置於升降銷113上。搬送部，係從處理室145抽出。藉升降軸173使升降銷113下降，而使晶圓20下降至既定的處理位置為止。藉此，使晶圓20移動至基座台111上(S103)。Next, the transport unit picks up one wafer 20 in the pre-extraction chamber and carries it into the processing chamber 145. The lift pin 113 is raised by the lift shaft 173, and the wafer 20 is placed on the lift pin 113. The conveying unit is taken out from the processing chamber 145. The lift pin 113 is lowered by the lift shaft 173 to lower the wafer 20 to a predetermined processing position. Thereby, the wafer 20 is moved to the susceptor table 111 (S103).

(調溫及調壓)(tempering and pressure regulation)

以處理容器120內成為既定壓力(真空度)的方式，藉排氣裝置179對於處理容器120內作抽真空。此情況下，控制器170，係基於壓力檢測器所測定之處理容器120內的壓力資訊，而對於APC閥181之開度進行調整， 而對於處理容器120內的壓力進行控制。處理容器120內的壓力，係受控成例如30Pa~530Pa的範圍內之既定壓力。另外，排氣裝置179，係在至少電漿處理程序之期間維持予以經常運作之狀態。此外，處理容器120內的壓力之控制，係至少電漿處理程序之期間，接續進行。The inside of the processing container 120 is evacuated by the exhaust device 179 so that the inside of the processing container 120 becomes a predetermined pressure (degree of vacuum). In this case, the controller 170 adjusts the opening degree of the APC valve 181 based on the pressure information in the processing container 120 measured by the pressure detector. The pressure within the processing vessel 120 is controlled. The pressure in the processing vessel 120 is controlled to a predetermined pressure in the range of, for example, 30 Pa to 530 Pa. In addition, the exhaust unit 179 maintains a state of being constantly operated during at least the plasma processing program. Further, the control of the pressure in the processing vessel 120 is continued during at least the plasma processing procedure.

此外，以晶圓20的溫度成為既定的溫度之方式，藉加熱器163對於基座159作加熱。藉來自基座台111之熱導、或來自加熱器163之輻射等，以晶圓20成為例如180℃~250℃程度之範圍內的既定之處理溫度的方式進行加熱調整。另外，晶圓20的溫度之控制，係至少電漿處理程序之期間，接續進行(S104)。Further, the susceptor 159 is heated by the heater 163 so that the temperature of the wafer 20 becomes a predetermined temperature. The wafer 20 is heated and adjusted so as to have a predetermined processing temperature in the range of, for example, about 180 ° C to 250 ° C by heat conduction from the susceptor 111 or radiation from the heater 163. Further, the control of the temperature of the wafer 20 is continued during at least the plasma processing program (S104).

(電漿處理)(plasma processing)

接著，當晶圓20的溫度上升至既定的溫度時，藉供氣系統而將處理氣體供應至處理容器120內。具體而言，將處理氣體供給系統的閥52a打開，然後一邊藉質流控制器52b對於處理氣體的流量進行調整，一邊對於處理容器120內將處理氣體作供應。往處理容器120內所供給之處理氣體，係藉擴散板160而分散，沿著反應管131的內壁而流向下方。Next, when the temperature of the wafer 20 rises to a predetermined temperature, the processing gas is supplied into the processing container 120 by the gas supply system. Specifically, the valve 52a of the process gas supply system is opened, and the process gas is supplied to the inside of the processing container 120 while the flow rate of the process gas is adjusted by the mass flow controller 52b. The processing gas supplied into the processing container 120 is dispersed by the diffusion plate 160 and flows downward along the inner wall of the reaction tube 131.

與處理氣體的供應同時，藉電漿生成部而生成處理氣體的電漿。具體而言，從高頻電源144對於諧振線圈132施加高頻電力。其結果，於電漿生成區域130發生電漿放電，處理氣體成為電漿狀態。電漿狀態之處理氣 體，係從電漿生成區域130流向處理室145，供應至晶圓20上。其結果，形成於晶圓20的處理面之上的抗蝕膜被灰化。Simultaneously with the supply of the processing gas, a plasma of the processing gas is generated by the plasma generating unit. Specifically, high frequency power is applied from the high frequency power source 144 to the resonance coil 132. As a result, plasma discharge occurs in the plasma generation region 130, and the processing gas becomes a plasma state. Plasma gas The body flows from the plasma generation region 130 to the processing chamber 145 and is supplied onto the wafer 20. As a result, the resist film formed on the processing surface of the wafer 20 is ashed.

作為處理氣體，例如，使用：O2 氣體、H2 氣體、N2 氣體、Ar氣體、He氣體、四氟甲烷(CF4 )氣體及三氟甲烷(CHF3 )氣體的至少任一者、或將該等氣體作組合之氣體。此外，處理氣體的流量，係藉質流控制器52b，調整成例如800~2600sccm的範圍內。此外，處理壓力，係採取例如30Pa~530Pa的範圍內。此外，施加於諧振線圈132之高頻電力，係採取例如600W~2000W的範圍內。另外，高頻電源144的振盪頻率，係收束於諧振線圈132的諧振頻率。此時，RF感測器168對於來自諧振線圈132之反射波作監視，將所監視之反射波的等級放送至頻率整合器146。頻率整合器146，係以反射波電力的反射波成為最小的方式對於高頻電源144之振盪頻率進行調整。藉此，即使在氣體流量、氣體混合比、壓力之處理條件產生變動之情況下，高頻電源144之振盪頻率係直接作整合。As the processing gas, for example, at least one of O 2 gas, H 2 gas, N 2 gas, Ar gas, He gas, tetrafluoromethane (CF 4 ) gas, and trifluoromethane (CHF 3 ) gas, or These gases are combined gases. Further, the flow rate of the processing gas is adjusted to, for example, a range of 800 to 2600 sccm by the mass flow controller 52b. Further, the treatment pressure is, for example, in the range of 30 Pa to 530 Pa. Further, the high-frequency power applied to the resonance coil 132 is, for example, in the range of 600 W to 2000 W. Further, the oscillation frequency of the high-frequency power source 144 is converged at the resonance frequency of the resonance coil 132. At this time, the RF sensor 168 monitors the reflected wave from the resonant coil 132, and delivers the level of the reflected reflected wave to the frequency integrator 146. The frequency integrator 146 adjusts the oscillation frequency of the high-frequency power source 144 such that the reflected wave of the reflected wave power is minimized. Thereby, even when the processing conditions of the gas flow rate, the gas mixture ratio, and the pressure fluctuate, the oscillation frequency of the high-frequency power source 144 is directly integrated.

在電漿處理中，例如處理容器120的溫度變成高於既定的溫度時，將調整閥184的開度作加大。調溫氣體的流量會變大。藉此，處理容器120的溫度係下降至既定的溫度。另一方面，處理容器120的溫度變成低於既定的溫度時，將調整閥184的開度作縮小。藉此，處理容器120的溫度會上升至既定的溫度。以此方式，處理容器 120的溫度，係維持於既定的溫度。In the plasma processing, for example, when the temperature of the processing container 120 becomes higher than a predetermined temperature, the opening degree of the regulating valve 184 is increased. The flow rate of the tempering gas will become larger. Thereby, the temperature of the processing vessel 120 is lowered to a predetermined temperature. On the other hand, when the temperature of the processing container 120 becomes lower than a predetermined temperature, the opening degree of the adjustment valve 184 is reduced. Thereby, the temperature of the processing vessel 120 rises to a predetermined temperature. In this way, the processing container The temperature of 120 is maintained at a predetermined temperature.

當晶圓20的處理面上之抗蝕膜被除去時，停止來自高頻電源144之對於諧振線圈132的電力供給。此外，停止從供氣系統對於處理容器120之處理氣體的供應。藉此，結束對於晶圓20之電漿處理(S105)。When the resist film on the processing surface of the wafer 20 is removed, the supply of electric power to the resonant coil 132 from the high-frequency power source 144 is stopped. In addition, the supply of process gas from the gas supply system to the processing vessel 120 is stopped. Thereby, the plasma processing for the wafer 20 is ended (S105).

(沖洗及大氣復原)(flushing and atmospheric recovery)

接著，在停止對於諧振線圈132之電力供給及處理氣體的供應後，將APC閥181全開，而既定之時間，對於處理容器120內進行排氣。此時，將沖洗氣體供給系統的閥51a打開，然後一邊藉質流控制器51b對於沖洗氣體的流量進行調整，一邊對於處理容器120內將沖洗氣體作供應。藉此，將處理容器120內以沖洗氣體作置換。然後，對於APC閥181之開度進行調整，而對於處理容器120內進行大氣復原(S106)。Next, after the supply of electric power to the resonant coil 132 and the supply of the processing gas are stopped, the APC valve 181 is fully opened, and the inside of the processing container 120 is exhausted for a predetermined period of time. At this time, the valve 51a of the flushing gas supply system is opened, and then the flushing gas is supplied into the processing container 120 while the flow rate of the flushing gas is adjusted by the mass flow controller 51b. Thereby, the inside of the processing container 120 is replaced with a flushing gas. Then, the opening degree of the APC valve 181 is adjusted, and atmospheric recovery is performed in the processing container 120 (S106).

(晶圓搬出)(wafer removal)

接著，將處理完畢的晶圓20從處理室145內搬出。處理完畢的晶圓20，係返回傳送盒(S107)。Next, the processed wafer 20 is carried out from the processing chamber 145. The processed wafer 20 is returned to the transfer cassette (S107).

(批次處理的結束判定)(end judgment of batch processing)

接著，判定對於既定個數的晶圓20之電漿處理是否已全部實施(S108)。既定個數，係例如設置於電漿處理裝置10之傳送盒內的晶圓20之收容個數，為例如25 個。Next, it is determined whether or not the plasma processing for a predetermined number of wafers 20 has been performed (S108). The predetermined number is, for example, the number of the wafers 20 placed in the transfer box of the plasma processing apparatus 10, for example, 25 One.

對於既定個數的晶圓20之電漿處理未全部實施之情況(在S108「No」的情況)下，同樣再度，從步驟S103進行至步驟S107為止。When the plasma processing of the predetermined number of wafers 20 is not fully implemented (in the case of "No" in S108), the process proceeds from step S103 to step S107 again.

(調溫氣流停止)(tempering airflow stops)

對於既定個數的晶圓20之電漿處理已全部實施之情況(在S108「Yes」的情況)下，使排出裝置188停止。藉此，使調溫氣流停止(S109)。以此方式，直到對於既定個數的晶圓20進行電漿處理為止，於流路140使調溫氣體持續流動。When the plasma processing of the predetermined number of wafers 20 has been fully performed (in the case of "Yes" in S108), the discharge device 188 is stopped. Thereby, the tempering airflow is stopped (S109). In this manner, the tempering gas continues to flow in the flow path 140 until the plasma processing is performed on the predetermined number of wafers 20.

(傳送盒搬出)(transfer box moves out)

從電漿處理裝置10，搬出具有處理完畢的晶圓20之傳送盒(S110)。以此方式，結束在本實施形態之電漿處理程序。The transfer case having the processed wafer 20 is carried out from the plasma processing apparatus 10 (S110). In this way, the plasma processing procedure of this embodiment is ended.

(4)本實施形態相關之效果(4) Effects related to the embodiment

依照本實施形態，發揮以下所示之1個或複數個效果。According to this embodiment, one or a plurality of effects shown below are exerted.

(a)依照本實施形態，流路140，係至少設於處理容器120與電漿生成部之諧振線圈132之間，沿著處理容器120的外壁而使調溫氣體作流動。複數個導入孔152a，係流路140之中在處理容器120的圓周方向上均等 作開設，於流路140內將調溫氣體作導入。調溫氣體，係從複數個導入孔152a在處理容器120的圓周方向上均等作導入。處理容器120，係藉調溫氣體而於圓周方向上均等被冷卻。處理容器120的溫度，係在圓周方向上成為均勻。晶圓20本身的溫度分布係在面內方向上均勻維持。或者電漿生成區域130的電漿密度在晶圓20之面內方向上均勻維持。藉此，對於晶圓20面內均勻實施電漿處理。在晶圓20的面內之電漿處理的速度或電漿處理的程度之均勻性會提升。(a) According to the present embodiment, the flow path 140 is provided between at least the processing container 120 and the resonance coil 132 of the plasma generating portion, and the temperature-regulating gas flows along the outer wall of the processing container 120. A plurality of introduction holes 152a are equal in the circumferential direction of the processing container 120 in the flow path 140 The opening is performed, and the temperature control gas is introduced into the flow path 140. The tempering gas is introduced equally from the plurality of introduction holes 152a in the circumferential direction of the processing container 120. The processing container 120 is uniformly cooled in the circumferential direction by the tempering gas. The temperature of the processing container 120 is uniform in the circumferential direction. The temperature distribution of the wafer 20 itself is uniformly maintained in the in-plane direction. Or the plasma density of the plasma generation region 130 is uniformly maintained in the in-plane direction of the wafer 20. Thereby, the plasma treatment is uniformly performed on the wafer 20 in the plane. The uniformity of the plasma processing speed or the degree of plasma treatment in the plane of the wafer 20 is enhanced.

於此，使用圖4，作為第1比較例，說明有關於導入孔152a於流路140不均勻開設之情況。圖4(a)，係對於本發明的一實施形態相關之處理容器120的溫度分布進行繪示之示意圖，圖4(b)，係對於第1比較例相關之處理容器120的溫度分布進行繪示之示意圖。圖4(a)及圖4(b)中之實線箭頭，係表示調溫氣體之流動。此外，圖4(a)及圖4(b)中之反應管131的色分布，係表示反應管131的溫度分布。Here, as a first comparative example, a case where the introduction hole 152a is unevenly opened in the flow path 140 will be described with reference to FIG. Fig. 4(a) is a schematic view showing the temperature distribution of the processing container 120 according to an embodiment of the present invention, and Fig. 4(b) is a view showing the temperature distribution of the processing container 120 according to the first comparative example. Schematic diagram of the show. The solid arrows in Figs. 4(a) and 4(b) indicate the flow of the tempering gas. Further, the color distribution of the reaction tube 131 in FIGS. 4(a) and 4(b) indicates the temperature distribution of the reaction tube 131.

如圖4(b)所示，在第1比較例，係例如，導入孔152a’僅設於遮蔽部(不圖示)的一部分。僅反應管131’的外壁之一部分受冷卻。在第1比較例中，低溫區域(LT)，係比高溫區域(HT)局部的。反應管131’的溫度係在圓周方向上呈不均勻。此情況下，晶圓本身的溫度分布會在面內方向上成為不均勻。或者電漿生成區域的電漿密度會在晶圓的面內方向上成為不均勻。反應管131’ 的溫度為低的場所附近之電漿處理的速度或電漿處理的程度，係低於反應管131’的溫度為高的場所附近之電漿處理的速度或電漿處理的程度。為此，存在晶圓的面內之電漿處理成為不均勻之可能性。As shown in Fig. 4 (b), in the first comparative example, for example, the introduction hole 152a' is provided only in a part of the shielding portion (not shown). Only a portion of the outer wall of the reaction tube 131' is cooled. In the first comparative example, the low temperature region (LT) is locally higher than the high temperature region (HT). The temperature of the reaction tube 131' is uneven in the circumferential direction. In this case, the temperature distribution of the wafer itself becomes uneven in the in-plane direction. Or the plasma density of the plasma generation region may become uneven in the in-plane direction of the wafer. Reaction tube 131' The speed of plasma treatment or the degree of plasma treatment in the vicinity of the place where the temperature is low is lower than the speed of plasma treatment or the degree of plasma treatment in the vicinity of the place where the temperature of the reaction tube 131' is high. For this reason, there is a possibility that the plasma treatment in the plane of the wafer becomes uneven.

相對於此，依照圖4(a)的本實施形態，反應管131，係藉調溫氣體而於圓周方向上均等被冷卻。在本實施形態中，低溫區域(LT)，係同於高溫區域(HT)，均等分布於反應管131的圓周方向。藉此，在晶圓的面內之電漿處理的均勻性會提升。On the other hand, according to the present embodiment of Fig. 4 (a), the reaction tube 131 is uniformly cooled in the circumferential direction by the tempering gas. In the present embodiment, the low temperature region (LT) is uniformly distributed in the circumferential direction of the reaction tube 131 in the same manner as the high temperature region (HT). Thereby, the uniformity of the plasma treatment in the plane of the wafer is improved.

(b)依照本實施形態，作為控制部之控制器170，係對於設在排出管186之調整閥184的開度進行調整，而對於調溫氣體的流量進行控制。處理容器120的溫度，係維持於既定的溫度。藉此，在處理中或每個處理中，可抑制電漿處理的速度或電漿處理的程度會隨時間推移而變化。因此，在晶圓20間的電漿處理的均勻性會提升。(b) According to the present embodiment, the controller 170 as the control unit controls the opening degree of the regulating valve 184 provided in the discharge pipe 186 to control the flow rate of the temperature control gas. The temperature of the processing vessel 120 is maintained at a predetermined temperature. Thereby, the speed at which plasma treatment or the degree of plasma treatment can be suppressed during processing or in each treatment changes with time. Therefore, the uniformity of plasma processing between the wafers 20 is enhanced.

於此，作為第2比較例，說明有關於不進行藉控制器之調溫氣體的流量控制的情況。在第2比較例，來自處理容器的放熱，係僅在遮蔽部與處理容器之間的空隙之自然對流、和來自處理容器的輻射。進行電漿處理會使得處理容器的溫度可能隨時間推移而上升。例如，對於一個晶圓進行電漿處理之情況下，處理結束時之處理容器的溫度，係成為高於處理開始時之處理容器的溫度。此外，連續對於複數個晶圓進行電漿處理之情況下，對於複 數個處理進行處理時之處理容器的溫度，係成為高於對於第一個晶圓進行處理時之處理容器的溫度。如此之情況下，晶圓的溫度可能會隨時間推移而變化。或者電漿生成區域的電漿密度可能會隨時間推移而變化。因此，在處理中或每個處理中，電漿處理的速度或電漿處理的程度會隨時間推移而變化。相對於此，依照本實施形態，藉控制器170，處理容器的溫度，係維持於既定的溫度。藉此，在處理中或每個處理中，可抑制電漿處理的速度或電漿處理的程度會隨時間推移而變化。Here, as a second comparative example, the case where the flow rate control of the temperature control gas by the controller is not performed will be described. In the second comparative example, the heat release from the processing container is natural convection only in the gap between the shielding portion and the processing container, and radiation from the processing container. Performing a plasma treatment can cause the temperature of the processing vessel to rise over time. For example, in the case of performing plasma treatment on one wafer, the temperature of the processing container at the end of the processing is higher than the temperature of the processing container at the start of the processing. In addition, in the case of continuous plasma processing of a plurality of wafers, The temperature of the processing container at the time of processing for a plurality of processes is higher than the temperature of the processing container when the first wafer is processed. In this case, the temperature of the wafer may change over time. Or the plasma density of the plasma generating region may change over time. Thus, the speed of plasma treatment or the degree of plasma treatment can vary over time during or during each treatment. On the other hand, according to the present embodiment, the temperature of the processing container is maintained at a predetermined temperature by the controller 170. Thereby, the speed at which plasma treatment or the degree of plasma treatment can be suppressed during processing or in each treatment changes with time.

(c)依照本實施形態，氣體緩衝部182，係設於流路140之中電漿生成部與排出孔185之間。氣體緩衝部182內之電導，係大於比流路140的氣體緩衝部182靠導入孔152a側之電導。藉此，在調溫氣體流入氣體緩衝部182內時，朝向排出孔185之流動難以受阻。藉處理容器120而暖化之調溫氣體，係高效率從氣體緩衝部182排出於排出孔185。(c) According to the present embodiment, the gas buffer portion 182 is provided between the plasma generating portion and the discharge hole 185 in the flow path 140. The conductance in the gas buffer portion 182 is larger than the conductance on the side of the introduction hole 152a than the gas buffer portion 182 of the flow path 140. Thereby, when the temperature-regulating gas flows into the gas buffer portion 182, the flow toward the discharge hole 185 is hardly hindered. The tempering gas warmed by the processing container 120 is efficiently discharged from the gas buffer portion 182 to the discharge hole 185.

(d)依照本實施形態，複數個中間開口156，係設於流路140之中電漿生成部與排出孔185之間，流路140之中在處理容器120的圓周方向上均等作開設。複數個中間開口156，係從排出孔185以均等之距離作配置。流路140之中導入孔152a與中間開口156之間的部分之流速，係於處理容器120的圓周方向上成為均勻。藉此，處理容器120，係易於在圓周方向上均等作冷卻。(d) According to the present embodiment, the plurality of intermediate openings 156 are provided between the plasma generating portion and the discharge hole 185 in the flow path 140, and the flow path 140 is equally opened in the circumferential direction of the processing container 120. A plurality of intermediate openings 156 are disposed from the discharge holes 185 at equal distances. The flow velocity of the portion between the introduction hole 152a and the intermediate opening 156 in the flow path 140 is uniform in the circumferential direction of the processing container 120. Thereby, the processing container 120 is easily cooled uniformly in the circumferential direction.

(e)依照本實施形態，導氣部153，係設於處理容器120與電漿生成部之諧振線圈132之間，從導入孔152a對於處理容器120與電漿生成部的諧振線圈132之間將調溫氣體作導引。流路140的一部分，係形成於處理容器120與導氣部153之間。流路140，係藉導氣部153，於沿著處理容器120之部分被窄化。即使調溫氣體的流量為相同流量，調溫氣體，仍高速流於處理容器120與諧振線圈132之間。調溫氣體之流速越高，調溫氣體與處理容器120之間的傳熱係數會提升，故促進了處理容器120的冷卻。(e) According to the present embodiment, the air guiding portion 153 is provided between the processing container 120 and the resonance coil 132 of the plasma generating portion, and between the processing container 120 and the resonance coil 132 of the plasma generating portion from the introduction hole 152a. The tempering gas is guided. A part of the flow path 140 is formed between the processing container 120 and the air guiding portion 153. The flow path 140 is narrowed by the gas guiding portion 153 along the portion along the processing container 120. Even if the flow rate of the tempering gas is the same flow rate, the tempering gas flows between the processing container 120 and the resonance coil 132 at a high speed. The higher the flow rate of the tempering gas, the higher the heat transfer coefficient between the tempering gas and the processing vessel 120, thereby facilitating the cooling of the processing vessel 120.

(f)依照本實施形態，進行對於既定個數的晶圓20之電漿處理，於流路140使調溫氣體持續流動，直到對於既定個數的晶圓20進行電漿處理為止。此期間，處理容器120的溫度，係維持於既定的溫度。對於各個的晶圓20之電漿處理，係在處理容器120的溫度為既定的溫度之狀態下進行。藉此，在處理中或每個處理中，可抑制電漿處理的速度或電漿處理的程度會隨時間推移而變化。(f) According to the present embodiment, plasma treatment is performed for a predetermined number of wafers 20, and the temperature-regulating gas is continuously flowed in the flow path 140 until plasma treatment is performed on a predetermined number of wafers 20. During this period, the temperature of the processing vessel 120 is maintained at a predetermined temperature. The plasma treatment of each of the wafers 20 is performed while the temperature of the processing container 120 is at a predetermined temperature. Thereby, the speed at which plasma treatment or the degree of plasma treatment can be suppressed during processing or in each treatment changes with time.

於此，作為使處理容器120的溫度穩定化之方法，考量：在電漿處理程序之前，將處理容器120作預熱之情況、及處理容器120作加熱時設定冷卻時間之情況。然而，在任一情況中，皆產生額外時間。存在產量降低之可能性。相對於此，依照本實施形態，處理容器120的溫度，係維持於既定的溫度。在處理中或每個處理中， 可抑制電漿處理的速度或電漿處理的程度會隨時間推移而變化。藉此，生產率提升。Here, as a method of stabilizing the temperature of the processing container 120, a case where the processing container 120 is preheated before the plasma processing program and a cooling time when the processing container 120 is heated are set. However, in either case, additional time is generated. There is a possibility of a decrease in yield. On the other hand, according to the present embodiment, the temperature of the processing container 120 is maintained at a predetermined temperature. In processing or in each process, The rate at which plasma treatment can be inhibited or the degree of plasma treatment can vary over time. Thereby, productivity is improved.

<本發明之其他實施形態><Other Embodiments of the Present Invention>

以上，雖具體對於本發明的實施之形態作說明，但本發明非限定於上述之實施形態者，在不脫離該要旨之範圍下可作各種變更。The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention.

在本實施形態中，係當作處理標的物為前程序的晶圓20而作了說明。處理標的物，係後程序之半導體裝置或半導體封裝亦可。In the present embodiment, the description is made on the wafer 20 in which the target object is the pre-program. The subject matter of the processing, the semiconductor device or the semiconductor package of the subsequent program may also be used.

在本實施形態中，係說明了：作為控制部之控制器170基於來自溫度測定部183的溫度資訊，而對於調整閥184之開度進行調整，而對於調溫氣體的流量進行控制之情況。控制器170，係基於預先輸入之溫度模擬結果，而對於調溫氣體的流量進行控制亦可。控制器170，係與上述模擬結果一起，基於處理氣體的流量、高頻電源144的電力、處理時間、處理之次數等，而對於調溫氣體的流量進行控制亦可。In the present embodiment, the controller 170 as the control unit adjusts the opening degree of the adjustment valve 184 based on the temperature information from the temperature measuring unit 183, and controls the flow rate of the temperature control gas. The controller 170 may control the flow rate of the tempering gas based on the temperature simulation result input in advance. The controller 170 may control the flow rate of the tempering gas based on the flow rate of the processing gas, the electric power of the high-frequency power source 144, the processing time, the number of times of processing, and the like, together with the above simulation result.

在本實施形態中，係說明了：溫度測定部183作直接接觸而對於處理容器120的溫度作測定之方法。溫度測定部183，係對於流動於流路140之調溫氣體的溫度作測定亦可。此外，溫度測定部183，係藉紅外線溫度計，非接觸對於處理容器120的溫度作測定亦可。In the present embodiment, a method in which the temperature measuring unit 183 directly contacts the temperature of the processing container 120 is described. The temperature measuring unit 183 may measure the temperature of the tempering gas flowing through the flow path 140. Further, the temperature measuring unit 183 may be an infrared thermometer, and the temperature of the processing container 120 may be measured by non-contact.

在本實施形態中，係對於流路140的中間開 口156環狀設有複數之情況進行了說明。中間開口156，係一個環狀(環狀)的空隙亦可。中間開口156，係較佳為與處理容器120同心圓狀作配置。排出孔185，係從電漿處理裝置10的鉛直上方所看，配置於環狀之中間開口156的中心。藉此，可獲得與本實施形態同樣的效果。In the present embodiment, the middle of the flow path 140 is opened. The case where the port 156 is provided with a plurality of rings is described. The intermediate opening 156 may be a ring-shaped (annular) gap. The intermediate opening 156 is preferably disposed concentrically with the processing vessel 120. The discharge hole 185 is disposed at the center of the annular intermediate opening 156 as seen from the vertical upper side of the plasma processing apparatus 10. Thereby, the same effects as in the present embodiment can be obtained.

<本發明的較佳態樣><Preferred aspect of the invention>

在以下，附記有關於本發明之較佳態樣。In the following, the attached note relates to preferred aspects of the invention.

(附記1)(Note 1)

依照本發明之一態樣，提供一種電漿處理裝置，具有：對於處理標的物進行處理之處理容器；對於前述處理容器內將處理氣體作供應的供氣系統；對於前述處理容器內作排氣的排氣系統；設於前述處理容器的外側，生成供應於前述處理容器內之前述處理氣體的電漿之電漿生成部；設於至少前述處理容器與前述電漿生成部之間，使調溫氣體沿著前述處理容器的外壁而流動的流路；開設於前述處理容器的圓周方向，對於前述流路將前述溫度調整氣體作導入的導入孔；以及將流動於前述流路之前述溫度調整氣體作排出的排出孔。According to an aspect of the present invention, there is provided a plasma processing apparatus comprising: a processing container for processing a target object; a gas supply system for supplying a processing gas in the processing container; and exhausting the inside of the processing container; An exhaust system provided on the outer side of the processing container to generate a plasma generated by the plasma of the processing gas in the processing container; and at least between the processing container and the plasma generating unit a flow path through which the warm gas flows along the outer wall of the processing container; an introduction hole that opens the temperature adjustment gas to the flow path in the circumferential direction of the processing container; and the temperature adjustment that flows in the flow path The gas is used as a discharge hole for discharge.

(附記2)(Note 2)

如附記1之電漿處理裝置，其中，較佳者，具有：連接於前述排出孔，將前述溫度調整氣體從前述排出孔作排出之排出管；設於前述排出管之調整閥；以及對於前述調整閥之開度進行調整，而對於前述溫度調整氣體的流量進行控制之控制部。A plasma processing apparatus according to the first aspect, preferably comprising: a discharge pipe connected to the discharge hole to discharge the temperature adjustment gas from the discharge hole; an adjustment valve provided in the discharge pipe; A control unit that controls the flow rate of the temperature adjustment gas by adjusting the opening degree of the valve.

(附記3)(Note 3)

依照本發明之其他態様，提供一種電漿處理裝置，具有：對於處理標的物作收容之處理容器；對於前述處理容器內將處理氣體作供應的供氣系統；對於前述處理容器內作排氣的排氣系統；設於前述處理容器的外側，生成供應於前述處理容器內之前述處理氣體的電漿之電漿生成部；設於至少前述處理容器與前述電漿生成部之間，使調溫氣體沿著前述處理容器的外壁而流動的流路；對於前述流路將前述溫度調整氣體作導入的導入孔；將流動於前述流路之前述溫度調整氣體作排出的排出孔；連接於前述排出孔，將前述溫度調整氣體從前述排出孔作排出之排出管； 設於前述排出管之調整閥；以及對於前述調整閥之開度進行調整，而對於前述溫度調整氣體的流量進行控制之控制部。According to another aspect of the present invention, there is provided a plasma processing apparatus comprising: a processing container for receiving a target object; a gas supply system for supplying a processing gas in the processing container; and exhausting the inside of the processing container; An exhaust system; a plasma generating unit that is provided outside the processing container to generate a plasma of the processing gas supplied in the processing container; and is provided between at least the processing container and the plasma generating unit to adjust the temperature a flow path through which the gas flows along the outer wall of the processing container; an introduction hole through which the temperature adjustment gas is introduced into the flow path; a discharge hole through which the temperature adjustment gas flowing through the flow path is discharged; and the discharge is connected a discharge pipe for discharging the temperature adjustment gas from the discharge hole; An adjustment valve provided in the discharge pipe; and a control unit that controls the flow rate of the temperature adjustment gas by adjusting an opening degree of the adjustment valve.

(附記4)(Note 4)

如附記2或3之電漿處理裝置，其中，較佳者，具有對於前述處理容器的溫度作測定之溫度測定部，前述控制部，係基於來自前述溫度測定部的溫度資訊而對於前述調整閥進行控制。The plasma processing apparatus according to the second or third aspect, wherein the temperature measuring unit for measuring the temperature of the processing container is preferable, and the control unit is configured to adjust the temperature based on temperature information from the temperature measuring unit. Take control.

(附記5)(Note 5)

如附記1~4中任一者之電漿處理裝置，其中，較佳者，具有：設於前述流路之中前述電漿生成部與前述排出孔之間的氣體緩衝部，前述氣體緩衝部內的電導，係大於前述流路之中比前述氣體緩衝部靠前述導入孔側之電導。The plasma processing apparatus according to any one of the first to fourth aspects of the present invention, further preferably comprising: a gas buffering portion provided between the plasma generating portion and the discharge hole in the flow path, in the gas buffer portion The conductance is larger than the conductance of the gas channel portion on the side of the introduction hole than the gas channel portion.

(附記6)(Note 6)

如附記5之電漿處理裝置，其中，較佳者，前述氣體緩衝部，係設於前述處理容器之上。In the plasma processing apparatus according to the fifth aspect, preferably, the gas buffering portion is provided on the processing container.

(附記7)(Note 7)

如附記5或6之電漿處理裝置，其中，較佳者， 前述排出孔，係設於從鉛直上方所見時前述氣體緩衝部的中央。A plasma processing apparatus according to supplementary note 5 or 6, wherein, preferably, The discharge hole is provided at the center of the gas buffer portion when viewed from above the vertical direction.

(附記8)(Note 8)

如附記1~7中任一者之電漿處理裝置，其中，較佳者，具有：設於前述流路之中前述電漿生成部與前述排出孔之間，在前述流路之中前述處理容器的圓周方向上均等開設之複數個中間開口，前述複數個中間開口，係從前述排出孔以均等之距離作配置。The plasma processing apparatus according to any one of the first to seventh aspect, wherein the plasma processing unit is disposed between the plasma generating unit and the discharge hole in the flow path, and the processing is performed in the flow path. A plurality of intermediate openings are equally provided in the circumferential direction of the container, and the plurality of intermediate openings are disposed at equal distances from the discharge holes.

(附記9)(Note 9)

如附記1~8中任一者之電漿處理裝置，其中，較佳者，具有：以包圍前述電漿生成部的外側之方式而設，具有前述導入孔，具有導電性之遮蔽部，前述流路之一部分，係設於至少前述處理容器與前述遮蔽部之間。The plasma processing apparatus according to any one of the first to eighth aspects, wherein the plasma processing apparatus is provided to have an outer side so as to surround the plasma generating unit, and has an introduction hole and a conductive shielding portion. One of the flow paths is provided between at least the processing container and the shielding portion.

(附記10)(Note 10)

如附記1~9中任一者之電漿處理裝置，其中，較佳者，具有：在前述處理容器與前述電漿生成部之間以包圍 前述處理容器的外側之方式而設，從前述導入孔對於前述處理容器與前述電漿生成部之間將前述溫度調整氣體作導引之導氣部，前述流路之一部分，係設於前述處理容器與前述導氣部之間。The plasma processing apparatus according to any one of the preceding claims, wherein preferably, the processing container and the plasma generating unit are surrounded by An air guide portion that guides the temperature adjustment gas between the processing container and the plasma generating portion from the introduction hole, and a part of the flow path is provided in the treatment. Between the container and the aforementioned air guiding portion.

(附記11)(Note 11)

如附記10之電漿處理裝置，其中，較佳者，前述導氣部，係藉低電容率的材料而形成。In the plasma processing apparatus according to the tenth aspect, preferably, the gas guiding portion is formed of a material having a low permittivity.

(附記12)(Note 12)

如附記10或11之電漿處理裝置，其中，較佳者，前述導氣部，係藉絕緣性的材料而形成。In the plasma processing apparatus according to the tenth or eleventh aspect, preferably, the gas guiding portion is formed of an insulating material.

(附記13)(Note 13)

如附記10~12中任一者之電漿處理裝置，其中，較佳者，前述導氣部，係藉具有耐熱性之材料而形成。In the plasma processing apparatus according to any one of the items 10 to 12, preferably, the gas guiding portion is formed of a material having heat resistance.

(附記14)(Note 14)

如附記10~13中任一者之電漿處理裝置，其中，較佳者，具有：以包圍前述電漿生成部的外側之方式而設，具有前述導入孔，具有導電性之遮蔽部， 前述導氣部與前述處理容器之間隔，係窄於前述導氣部與前述遮蔽部之間隔。The plasma processing apparatus according to any one of the above-mentioned first aspect, wherein the plasma processing apparatus is provided to have an outer side so as to surround the plasma generating portion, and has an introduction hole and a conductive shielding portion. The distance between the air guiding portion and the processing container is narrower than the distance between the air guiding portion and the shielding portion.

(附記15)(Note 15)

如附記10~14中任一者之電漿處理裝置，其中，較佳者，前述導氣部，係具有：以包圍前述處理容器的方式而設之中間部；接於前述中間部之中前述導入孔側，以對於前述溫度調整氣體流入前述導氣部與前述遮蔽部之間的情況進行抑制的方式而設之凸緣部。The plasma processing apparatus according to any one of the preceding claims, wherein the gas guiding unit has an intermediate portion provided to surround the processing container, and is connected to the intermediate portion The introduction hole side is provided with a flange portion so as to suppress the flow of the temperature adjustment gas between the air guide portion and the shielding portion.

(附記16)(Note 16)

如附記15之電漿處理裝置，其中，較佳者，前述凸緣部，係從前述中間部於徑向往外側作擴張。In the plasma processing apparatus according to the fifteenth aspect, preferably, the flange portion is expanded outward in the radial direction from the intermediate portion.

(附記17)(Note 17)

如附記10~16中任一者之電漿處理裝置，其中，較佳者，前述導氣部，係藉聚四氟乙烯(註冊商標)、PTFE(聚四氟乙烯)、PCTFE(聚三氟氯乙烯)、PEEK(聚醚醚酮)、POM(多聚甲醛)、聚醯亞胺(註冊商標)、PBI(聚苯并咪唑)中的任一材料而形成。The plasma processing apparatus according to any one of the items 10 to 16, wherein preferably, the gas guiding portion is made of polytetrafluoroethylene (registered trademark), PTFE (polytetrafluoroethylene), PCTFE (polytrifluoroethylene). It is formed by any of vinyl chloride), PEEK (polyetheretherketone), POM (paraformaldehyde), polyimine (registered trademark), and PBI (polybenzimidazole).

(附記18)(Note 18)

如附記1~17中任一者之電漿處理裝置，其中，較佳者，前述溫度調整氣體係大氣或氮氣。The plasma processing apparatus according to any one of the preceding claims, wherein the temperature adjustment gas system atmosphere or nitrogen gas is preferred.

(附記19)(Note 19)

如附記1~18中任一者之電漿處理裝置，其中，較佳者，前述導入孔係設置複數個，前述複數個導入孔，係以均等的間隔而開設於前述處理容器的圓周方向。In the plasma processing apparatus according to any one of the first to eighth aspects, preferably, the plurality of introduction holes are provided in a plurality of the introduction holes, and the plurality of introduction holes are formed in the circumferential direction of the processing container at equal intervals.

(附記20)(Note 20)

依照本發明之其他態様，提供一種電漿處理方法，具有：對於處理容器內將處理標的物作搬送之程序；以及對於前述處理容器內將處理氣體作導入，藉設於前述處理容器的外側之電漿生成部而生成供應於前述處理容器內之前述處理氣體的電漿，而對於前述處理標的物進行電漿處理之電漿處理程序；在至少前述電漿處理程序，係在設於至少前述處理容器與前述電漿生成部之間且沿著前述處理容器的外壁之流路，從開設於前述處理容器的圓周方向之導入孔，使調溫氣體作流動。According to another aspect of the present invention, there is provided a plasma processing method comprising: a process for transporting a target object in a processing container; and introducing a processing gas into the processing container, by being disposed outside the processing container a plasma generating unit that generates a plasma to be supplied to the processing gas in the processing container, and a plasma processing program that performs plasma processing on the processing target; at least the plasma processing program is provided in at least the foregoing The flow path between the processing container and the plasma generating portion along the outer wall of the processing container flows through the introduction hole formed in the circumferential direction of the processing container.

(附記21)(Note 21)

依照本發明之其他態様，提供一種電漿處理方法，具有：對於處理容器內將處理標的物作搬送之程序；以及對於前述處理容器內將處理氣體作導入，藉設於前述處理容器的外側之電漿生成部而生成供應於前述處理容器內之前述處理氣體的電漿，而對於前述處理標的物進行電漿處理之電漿處理程序；在至少前述電漿處理程序，係在設於至少前述處理容器與前述電漿生成部之間且沿著前述處理容器的外壁之流路使調溫氣體作流動，同時以前述處理容器的溫度成為既定的溫度之方式對於前述溫度調整氣體之流量進行控制。According to another aspect of the present invention, there is provided a plasma processing method comprising: a process for transporting a target object in a processing container; and introducing a processing gas into the processing container, by being disposed outside the processing container a plasma generating unit that generates a plasma to be supplied to the processing gas in the processing container, and a plasma processing program that performs plasma processing on the processing target; at least the plasma processing program is provided in at least the foregoing The temperature regulating gas flows between the processing container and the plasma generating portion and along the flow path of the outer wall of the processing container, and the flow rate of the temperature adjusting gas is controlled such that the temperature of the processing container becomes a predetermined temperature. .

(附記22)(Note 22)

如附記20或21之電漿處理方法，其中，較佳者，對於既定數之前述處理標的物，而進行前述電漿處理程序，於前述流路使前述溫度調整氣體持續流動，直到對於前述既定數之前述處理標的物而進行前述電漿處理程序為止。In the plasma processing method according to the supplementary note 20 or 21, preferably, the plasma processing program is performed on the predetermined number of the processing targets, and the temperature adjustment gas is continuously flowed in the flow path until the predetermined condition is established. The above-mentioned plasma processing procedure is carried out by processing the target substance as described above.

(附記23)(Note 23)

如附記20~22中任一者之電漿處理方法，其中，較 佳者，在至少前述電漿處理程序，係於前述流路，從以均等的間隔而開設於前述處理容器的圓周方向之複數個導入孔，使調溫氣體作流動。A plasma processing method according to any one of the supplementary notes 20 to 22, wherein Preferably, at least the plasma processing program is applied to the flow path, and the temperature-regulating gas is caused to flow from a plurality of introduction holes formed in the circumferential direction of the processing container at equal intervals.

10‧‧‧電漿處理裝置10‧‧‧ Plasma processing unit

20‧‧‧晶圓20‧‧‧ wafer

51a‧‧‧閥51a‧‧‧Valve

51b‧‧‧質流控制器51b‧‧‧Flow Controller

51c‧‧‧配管51c‧‧‧Pipe

52a‧‧‧閥52a‧‧‧Valve

52b‧‧‧質流控制器52b‧‧‧Flow Controller

52c‧‧‧配管52c‧‧‧Pipe

111‧‧‧基座台111‧‧‧Base table

113‧‧‧升降銷113‧‧‧lifting pin

114‧‧‧基板保持部114‧‧‧Substrate retention department

120‧‧‧處理容器120‧‧‧Processing container

130‧‧‧電漿生成區域130‧‧‧ Plasma generation area

131‧‧‧反應管131‧‧‧Reaction tube

132‧‧‧諧振線圈132‧‧‧Resonance coil

133‧‧‧氣體導入口133‧‧‧ gas inlet

140‧‧‧流路140‧‧‧flow path

144‧‧‧高頻電源144‧‧‧High frequency power supply

145‧‧‧處理室145‧‧‧Processing room

146‧‧‧頻率整合器146‧‧‧frequency integrator

148‧‧‧底板148‧‧‧floor

152‧‧‧遮蔽部152‧‧‧Shading Department

152a‧‧‧導入孔152a‧‧‧Importing hole

153a‧‧‧凸緣部153a‧‧‧Flange

153b‧‧‧中間部153b‧‧‧Intermediate

153c‧‧‧凸緣部153c‧‧‧Flange

153‧‧‧導氣部153‧‧‧Gas Guide

154‧‧‧頂板154‧‧‧ top board

156‧‧‧中間開口156‧‧‧Intermediate opening

158‧‧‧擋環158‧‧ ‧ retaining ring

159‧‧‧基座159‧‧‧Base

160‧‧‧擴散板160‧‧‧Diffuser

161‧‧‧支柱161‧‧‧ pillar

162‧‧‧可動分接頭162‧‧‧ movable tap

163‧‧‧加熱器163‧‧‧heater

164‧‧‧固定接地164‧‧‧Fixed grounding

165‧‧‧排氣板165‧‧‧Exhaust plate

166‧‧‧可動分接頭166‧‧‧ movable tap

167‧‧‧導軸167‧‧‧Guide axis

168‧‧‧RF感測器168‧‧‧RF sensor

169‧‧‧底板169‧‧‧floor

170‧‧‧控制器170‧‧‧ Controller

171‧‧‧升降基板171‧‧‧ Lifting substrate

172‧‧‧顯示器172‧‧‧ display

173‧‧‧升降軸173‧‧‧ lifting shaft

175‧‧‧排氣連通孔175‧‧‧Exhaust communication hole

179‧‧‧排氣裝置179‧‧‧Exhaust device

180‧‧‧排氣管180‧‧‧Exhaust pipe

182‧‧‧氣體緩衝部182‧‧‧ gas buffer

181‧‧‧APC閥181‧‧‧APC valve

183‧‧‧溫度測定部183‧‧‧ Temperature Measurement Department

184‧‧‧調整閥184‧‧‧Adjustment valve

185‧‧‧排出孔185‧‧‧Exhaust hole

186‧‧‧排出管186‧‧‧Draining tube

188‧‧‧排出裝置188‧‧‧Draining device

190‧‧‧晶圓收容部190‧‧‧Wafer Storage Department

Claims (7)

一種電漿處理裝置，具有：對於處理標的物進行處理之處理容器；對於前述處理容器內將處理氣體作供應的供氣系統；對於前述處理容器內作排氣的排氣系統；具有以於前述處理容器的外側作捲繞的方式而設之線圈，生成供應於前述處理容器內之前述處理氣體的電漿之電漿生成部；設於至少前述處理容器與前述電漿生成部的線圈之間，使調溫氣體沿著前述處理容器的外壁而流動的流路；開設於前述處理容器的圓周方向，對於前述流路將前述溫度調整氣體作導入的導入孔；以及將流動於前述流路之前述溫度調整氣體作排出的排出孔。 A plasma processing apparatus comprising: a processing container for processing a target object; a gas supply system for supplying a processing gas in the processing container; and an exhaust system for exhausting the processing container; a coil provided in a manner of winding the outer side of the processing container to generate a plasma generating portion of the plasma supplied to the processing gas in the processing container; and at least between the processing container and the coil of the plasma generating portion a flow path through which the temperature control gas flows along the outer wall of the processing container; an introduction hole that opens the temperature adjustment gas to the flow path in the circumferential direction of the processing container; and flows into the flow path The temperature adjustment gas is used as a discharge hole for discharging. 一種電漿處理裝置，具有：對於處理標的物作收容之處理容器；對於前述處理容器內將處理氣體作供應的供氣系統；對於前述處理容器內作排氣的排氣系統；具有以於前述處理容器的外側作捲繞的方式而設之線圈，生成供應於前述處理容器內之前述處理氣體的電漿之電漿生成部；設於至少前述處理容器與前述電漿生成部的線圈之 間，使調溫氣體沿著前述處理容器的外壁而流動的流路；對於前述流路將前述溫度調整氣體作導入的導入孔；將流動於前述流路之前述溫度調整氣體作排出的排出孔；連接於前述排出孔，將前述溫度調整氣體從前述排出孔作排出之排出管；設於前述排出管之調整閥；以及對於前述調整閥之開度進行調整，而對於前述溫度調整氣體的流量進行控制之控制部。 A plasma processing apparatus comprising: a processing container for receiving a target object; a gas supply system for supplying a processing gas in the processing container; and an exhaust system for exhausting the processing container; a coil provided in a manner of winding the outer side of the processing container to generate a plasma generating portion of the plasma supplied to the processing gas in the processing container; and a coil provided in at least the processing container and the plasma generating portion a flow path through which the temperature control gas flows along the outer wall of the processing container, an introduction hole through which the temperature adjustment gas is introduced into the flow path, and a discharge hole through which the temperature adjustment gas flowing through the flow path is discharged. a discharge pipe connected to the discharge hole to discharge the temperature adjustment gas from the discharge hole; an adjustment valve provided in the discharge pipe; and an adjustment of an opening degree of the adjustment valve to adjust a flow rate of the temperature Control unit that performs control. 如申請專利範圍第1或2項之電漿處理裝置，其中，具有：在前述處理容器與前述電漿生成部的線圈之間以包圍前述處理容器的外側之方式而設，從前述導入孔對於前述處理容器與前述電漿生成部的線圈之間將前述溫度調整氣體作導引之導氣部，前述流路之一部分，係設於前述處理容器與前述導氣部之間。 The plasma processing apparatus according to claim 1 or 2, wherein the processing container and the coil of the plasma generating unit are provided so as to surround an outer side of the processing container, and the introduction hole is An air guiding portion that guides the temperature adjustment gas between the processing container and the coil of the plasma generating portion, and one of the flow paths is provided between the processing container and the air guiding portion. 如申請專利範圍第1或2項之電漿處理裝置，其中，具有：設於前述電漿生成部與前述排出孔之間的氣體緩衝部，前述氣體緩衝部內的電導，係大於比前述流路之前述氣體緩衝部靠前述導入孔側之電導。 The plasma processing apparatus according to claim 1 or 2, further comprising: a gas buffer portion provided between the plasma generating portion and the discharge hole, wherein an conductance in the gas buffer portion is larger than the flow path The gas buffer portion is electrically guided to the side of the introduction hole. 如申請專利範圍第4項之電漿處理裝置，其中， 具有：在前述處理容器與前述電漿生成部的線圈之間以包圍前述處理容器的外側之方式而設，從前述導入孔對於前述處理容器與前述電漿生成部的線圈之間將前述溫度調整氣體作導引之導氣部，前述流路之一部分，係設於前述處理容器與前述導氣部之間。 A plasma processing apparatus according to item 4 of the patent application, wherein The temperature between the processing container and the coil of the plasma generating unit is surrounded by the outer side of the processing container, and the temperature is adjusted between the processing container and the coil of the plasma generating unit from the introduction hole. The gas guiding portion for guiding the gas, and one of the flow paths is provided between the processing container and the air guiding portion. 一種電漿處理方法，具有：對於處理容器內將處理標的物作搬送之程序；以及對於前述處理容器內將處理氣體作導入，藉設於前述處理容器的外側之電漿生成部而生成供應於前述處理容器內之前述處理氣體的電漿，而對於前述處理標的物進行電漿處理之電漿處理程序；在至少前述電漿處理程序，係在設於至少前述處理容器與前述電漿生成部之間且沿著前述處理容器的外壁之流路，從開設於前述處理容器的圓周方向之導入孔，使調溫氣體作流動。 A plasma processing method comprising: a process of transporting a target object in a processing container; and introducing a processing gas into the processing container, and generating a supply by a plasma generating unit disposed outside the processing container a plasma processing program for treating a plasma of the processing gas in the container and performing plasma treatment on the processing target; wherein at least the plasma processing program is provided in at least the processing container and the plasma generating portion The temperature-regulating gas flows between the inlet holes formed in the circumferential direction of the processing container along the flow path along the outer wall of the processing container. 一種電漿處理方法，具有：對於處理容器內將處理標的物作搬送之程序；以及對於前述處理容器內將處理氣體作導入，藉設於前述處理容器的外側之電漿生成部而生成供應於前述處理容器內之前述處理氣體的電漿，而對於前述處理標的物進行電漿處理之電漿處理程序； 在至少前述電漿處理程序，係在設於至少前述處理容器與前述電漿生成部之間且沿著前述處理容器的外壁之流路使調溫氣體作流動，同時以前述處理容器的溫度成為既定的溫度之方式對於前述溫度調整氣體之流量進行控制。 A plasma processing method comprising: a process of transporting a target object in a processing container; and introducing a processing gas into the processing container, and generating a supply by a plasma generating unit disposed outside the processing container a plasma processing program for treating a plasma of the processing gas in the container and performing a plasma treatment on the foregoing processing target; In at least the plasma processing program, the temperature-regulating gas is caused to flow between at least the processing container and the plasma generating portion and along the outer wall of the processing container, and the temperature of the processing container becomes The manner of the predetermined temperature controls the flow rate of the aforementioned temperature adjustment gas.
TW103106771A 2013-03-01 2014-02-27 Plasma processing device and plasma processing method TWI508128B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013040652A JP6162980B2 (en) 2013-03-01 2013-03-01 Plasma processing apparatus and plasma processing method

Publications (2)

Publication Number Publication Date
TW201503215A TW201503215A (en) 2015-01-16
TWI508128B true TWI508128B (en) 2015-11-11

Family

ID=51692891

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103106771A TWI508128B (en) 2013-03-01 2014-02-27 Plasma processing device and plasma processing method

Country Status (2)

Country Link
JP (1) JP6162980B2 (en)
TW (1) TWI508128B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101557880B1 (en) * 2014-07-07 2015-10-13 (주)클린팩터스 Low pressure plasma reactor for exhaust gas treatment
JP6522917B2 (en) * 2014-09-29 2019-05-29 芝浦メカトロニクス株式会社 Pattern forming apparatus, processing apparatus, pattern forming method, and processing method
WO2017056149A1 (en) * 2015-09-28 2017-04-06 株式会社日立国際電気 Substrate treatment apparatus, method for manufacturing semiconductor device, and program
WO2019053806A1 (en) * 2017-09-13 2019-03-21 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate treatment apparatus, method for manufacturing semiconductor device, and program
KR102462379B1 (en) * 2017-09-20 2022-11-03 가부시키가이샤 코쿠사이 엘렉트릭 Substrate processing device, semiconductor device production method, and program
JP6909824B2 (en) * 2019-05-17 2021-07-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Substrate processing equipment, semiconductor equipment manufacturing methods and programs

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030062128A1 (en) * 2000-02-14 2003-04-03 Kazuki Denpoh Apparatus and method for plasma treatment
US20080085377A1 (en) * 2002-12-10 2008-04-10 Semiconductor Energy Laboratory Co., Ltd. Plasma treatment apparatus and method for plasma treatment
US20090136683A1 (en) * 2007-11-27 2009-05-28 Asm Japan K.K. Method of plasma treatment using amplitude-modulated rf power
TW201126603A (en) * 2009-05-01 2011-08-01 Tokyo Electron Ltd Plasma process apparatus and plasma process method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4384645B2 (en) * 2001-01-11 2009-12-16 株式会社日立国際電気 Processing tube
JP2004063663A (en) * 2002-07-26 2004-02-26 Hitachi Kokusai Electric Inc Device for manufacturing semiconductor
US8039049B2 (en) * 2005-09-30 2011-10-18 Tokyo Electron Limited Treatment of low dielectric constant films using a batch processing system
JP2011061037A (en) * 2009-09-10 2011-03-24 Hitachi Kokusai Electric Inc Substrate processing apparatus, and method of manufacturing semiconductor device
JP5545055B2 (en) * 2010-06-15 2014-07-09 東京エレクトロン株式会社 Support structure and processing apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030062128A1 (en) * 2000-02-14 2003-04-03 Kazuki Denpoh Apparatus and method for plasma treatment
US20080085377A1 (en) * 2002-12-10 2008-04-10 Semiconductor Energy Laboratory Co., Ltd. Plasma treatment apparatus and method for plasma treatment
US20090136683A1 (en) * 2007-11-27 2009-05-28 Asm Japan K.K. Method of plasma treatment using amplitude-modulated rf power
TW201126603A (en) * 2009-05-01 2011-08-01 Tokyo Electron Ltd Plasma process apparatus and plasma process method

Also Published As

Publication number Publication date
JP6162980B2 (en) 2017-07-12
TW201503215A (en) 2015-01-16
JP2014170634A (en) 2014-09-18

Similar Documents

Publication Publication Date Title
TWI508128B (en) Plasma processing device and plasma processing method
WO2015145663A1 (en) Semiconductor device manufacturing method and substrate processing apparatus
TWI469238B (en) Plasma etching treatment device and plasma etching treatment method
KR100920280B1 (en) Processing apparatus
US20080134974A1 (en) Plasma processing apparatus and gas through plate
TWI409357B (en) Plasma processing device
US10968513B2 (en) Plasma film-forming apparatus and substrate pedestal
TWI473191B (en) Substrate processing apparatus, method of manufacturing a semiconductor device and substrate processing method
JP2006244891A (en) Microwave plasma processing device
US9786528B2 (en) Substrate supporting table, substrate processing apparatus, and manufacture method for semiconductor device
JP2008235611A (en) Plasma processing equipment and method for processing plasma
TW201203373A (en) Substrate processing apparatus and substrate processing method
US20100307685A1 (en) Microwave plasma processing apparatus
US20120180953A1 (en) Plasma processing apparatus and wave retardation plate used therein
US10190217B2 (en) Plasma film-forming method and plasma film-forming apparatus
JP2011029416A (en) Flat antenna member, and plasma processing device including the same
JP5171584B2 (en) Substrate mounting table for substrate processing apparatus, substrate processing apparatus, and method for manufacturing semiconductor device
JP6527260B2 (en) Substrate processing apparatus, gas supply structure, and method of manufacturing semiconductor device
JP2008153592A (en) Substrate processing system, and substrate processing method
KR20150046736A (en) Plasma processing apparatus and plasma processing
JP2012199402A (en) Substrate processing apparatus
JP2011187637A (en) Semiconductor manufacturing device
JP2009152233A (en) Semiconductor fabrication equipment
JP2001257167A (en) Semiconductor manufacturing device
JP2006128529A (en) Depositing equipment, depositing method, and storage medium