TWI505356B - 隔片以及使用該隔片的基板處理設備 - Google Patents

隔片以及使用該隔片的基板處理設備 Download PDF

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Publication number
TWI505356B
TWI505356B TW102115603A TW102115603A TWI505356B TW I505356 B TWI505356 B TW I505356B TW 102115603 A TW102115603 A TW 102115603A TW 102115603 A TW102115603 A TW 102115603A TW I505356 B TWI505356 B TW I505356B
Authority
TW
Taiwan
Prior art keywords
plate
injection
spacer
side portion
chamber
Prior art date
Application number
TW102115603A
Other languages
English (en)
Chinese (zh)
Other versions
TW201347036A (zh
Inventor
Hyoun Joon Cho
Seong Wook Lee
Original Assignee
Psk Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Psk Inc filed Critical Psk Inc
Publication of TW201347036A publication Critical patent/TW201347036A/zh
Application granted granted Critical
Publication of TWI505356B publication Critical patent/TWI505356B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW102115603A 2012-05-14 2013-05-01 隔片以及使用該隔片的基板處理設備 TWI505356B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120050865A KR101505536B1 (ko) 2012-05-14 2012-05-14 배플 및 이를 가지는 기판 처리 장치

Publications (2)

Publication Number Publication Date
TW201347036A TW201347036A (zh) 2013-11-16
TWI505356B true TWI505356B (zh) 2015-10-21

Family

ID=49854805

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102115603A TWI505356B (zh) 2012-05-14 2013-05-01 隔片以及使用該隔片的基板處理設備

Country Status (2)

Country Link
KR (1) KR101505536B1 (ko)
TW (1) TWI505356B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102155962B1 (ko) * 2019-05-21 2020-09-14 중앙대학교 산학협력단 반도체 공정용 유체 확산 성능 향상을 위한 베인 어셈블리
KR102225657B1 (ko) * 2019-11-14 2021-03-10 피에스케이 주식회사 배플 유닛, 이를 포함하는 기판 처리 장치
KR102371435B1 (ko) * 2021-05-03 2022-03-08 주식회사 기가레인 샤워 헤드

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6613204B2 (en) * 1995-04-24 2003-09-02 Si Diamond Technology, Inc. Pretreatment process for a surface texturing process
US7552521B2 (en) * 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7845309B2 (en) * 2004-07-13 2010-12-07 Nordson Corporation Ultra high speed uniform plasma processing system
US8006640B2 (en) * 2006-03-27 2011-08-30 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8152925B2 (en) * 2008-06-23 2012-04-10 Tokyo Electron Limited Baffle plate and substrate processing apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100290511B1 (ko) * 1999-03-27 2001-05-15 윤영세 반도체 건식각장비의 분리형 상부전극
JP5319731B2 (ja) * 2000-02-24 2013-10-16 東京エレクトロン株式会社 平行平板型ドライエッチング装置及びドライエッチング方法
JP4615464B2 (ja) * 2006-03-16 2011-01-19 東京エレクトロン株式会社 プラズマ処理装置用電極アッセンブリ及びプラズマ処理装置
KR20090039446A (ko) * 2007-10-18 2009-04-22 세메스 주식회사 애싱 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6613204B2 (en) * 1995-04-24 2003-09-02 Si Diamond Technology, Inc. Pretreatment process for a surface texturing process
US7845309B2 (en) * 2004-07-13 2010-12-07 Nordson Corporation Ultra high speed uniform plasma processing system
US7552521B2 (en) * 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US8006640B2 (en) * 2006-03-27 2011-08-30 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US8152925B2 (en) * 2008-06-23 2012-04-10 Tokyo Electron Limited Baffle plate and substrate processing apparatus

Also Published As

Publication number Publication date
KR20130127151A (ko) 2013-11-22
KR101505536B1 (ko) 2015-03-25
TW201347036A (zh) 2013-11-16

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