TWI497055B - Transmittance measuring apparatus, photomask transmittance inspection apparatus, transmittance inspection method, photomask manufacturing method, pattern transfer method, photomask product - Google Patents
Transmittance measuring apparatus, photomask transmittance inspection apparatus, transmittance inspection method, photomask manufacturing method, pattern transfer method, photomask product Download PDFInfo
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- 238000002834 transmittance Methods 0.000 title claims description 153
- 238000007689 inspection Methods 0.000 title claims description 52
- 238000012546 transfer Methods 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000010408 film Substances 0.000 claims description 72
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- 238000012360 testing method Methods 0.000 claims description 54
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- 238000000059 patterning Methods 0.000 claims description 11
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- 238000005259 measurement Methods 0.000 description 35
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
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- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 description 2
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- 229910000667 (NH4)2Ce(NO3)6 Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
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- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical group 0.000 description 1
- HKVFISRIUUGTIB-UHFFFAOYSA-O azanium;cerium;nitrate Chemical compound [NH4+].[Ce].[O-][N+]([O-])=O HKVFISRIUUGTIB-UHFFFAOYSA-O 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
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- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- FTBATIJJKIIOTP-UHFFFAOYSA-K trifluorochromium Chemical compound F[Cr](F)F FTBATIJJKIIOTP-UHFFFAOYSA-K 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0242—Control or determination of height or angle information of sensors or receivers; Goniophotometry
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
本發明係關於一種透過率測定裝置，例如，係關於一種測定具有將形成於透明基板上之光學膜加工而成之轉印圖案的光罩等之微細部分的光透過率之透過率測定裝置。The present invention relates to a transmittance measuring apparatus, for example, a transmittance measuring apparatus for measuring a light transmittance of a fine portion of a mask or the like having a transfer pattern formed by processing an optical film formed on a transparent substrate.
先前，液晶裝置等之電子器件之製造中係利用光微影步驟。即，對經蝕刻之被加工層(以下，亦稱為被轉印體)上所形成之抗蝕膜，利用具有特定轉印圖案之光罩在特定曝光條件下進行曝光，轉印該轉印圖案，使該抗蝕膜顯影，藉此而形成抗蝕圖案。其後，進行以該抗蝕圖案為光罩而蝕刻被轉印體之步驟。Conventionally, in the manufacture of electronic devices such as liquid crystal devices, a photolithography step has been utilized. That is, the resist film formed on the etched processed layer (hereinafter also referred to as the transfer target) is exposed to light under a specific exposure condition using a mask having a specific transfer pattern, and the transfer is transferred. The pattern is developed to develop the resist film, thereby forming a resist pattern. Thereafter, a step of etching the transferred body with the resist pattern as a mask is performed.
近年來，液晶顯示裝置等電子器件之製造中要求低成本化，謀求削減製造步驟之光罩數。具體而言，有人提案有藉由利用具有遮光部、透光部、及半透光部之多調式光罩(以下，亦稱為光罩)來減少使用之光罩片數之方法。即，藉由利用除遮光部與透光部之外還具有半透光部之具有3調式之光罩，於形成於被轉印體上之抗蝕膜曝光、顯影，可使曝光量局部有所不同，從而形成不同部分之殘膜量不同之抗蝕圖案。該情形下，先前使用2片光罩之步驟可變為使用1片光罩，因而可削減光罩之使用片數，提高生產效率。再者，為製作4調式以上之多調式光罩，亦有人提案有具有以光透過率不同之2種以上之半透光膜形成之半透光部的光罩(例如，日本特開2009-258250號公報(專利文獻1))。若使用如此之具有4調式之光罩，則先前使用3片光罩之步驟亦可以1片光罩來進行。此處，所謂半透光部，即指使用光罩將圖案轉印至被轉印體時，使透過之曝光光之透過量以特定量減少而控制被轉印體上之光致抗蝕膜顯影後的殘膜量之部分，將同時具備如此之半透光部、遮光部、透光部之光罩稱為多調式光罩。In recent years, in the manufacture of electronic devices such as liquid crystal display devices, cost reduction has been demanded, and the number of masks in the manufacturing process has been reduced. Specifically, a method of reducing the number of used photomasks by using a multi-tone mask (hereinafter also referred to as a photomask) having a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion has been proposed. In other words, by using a three-tone mask having a semi-transmissive portion in addition to the light-shielding portion and the light-transmitting portion, the resist film formed on the transfer target is exposed and developed, and the exposure amount can be partially The difference is to form a resist pattern having a different residual film amount in different portions. In this case, the step of previously using the two masks can be changed to use one mask, so that the number of sheets used for the mask can be reduced, and the production efficiency can be improved. In addition, in order to produce a multi-tone mask of four or more types, a mask having a semi-transmissive portion formed of two or more kinds of semi-transmissive films having different light transmittances has been proposed (for example, JP-A-2009- Bulletin No. 258250 (Patent Document 1)). If such a four-tone mask is used, the previous step of using three masks can also be performed by one mask. Here, the semi-transmissive portion refers to a photo-resist film on the transfer target when the transfer amount of the transmitted exposure light is reduced by a specific amount when the pattern is transferred to the transfer target by using a photomask. A portion of the residual film amount after development, which has such a semi-transmissive portion, a light-shielding portion, and a light-transmitting portion, is called a multi-tone mask.
作為液晶顯示裝置製造用之光罩，可使用例如多調式光罩，其係將對應TFT(薄膜電晶體)之源極、汲極之部分作為遮光部而形成，且將於該源極、汲極間鄰接而置之相當於通道部之部分作為半透光部而形成。近年來，隨著TFT通道部等之圖案之微細化，多調式光罩也越來越需要有微細之圖案，相當於TFT通道部之圖案中之通道寬度之部分，即遮光膜間之半透光部之寬度亦有微細化之傾向。此點對提高液晶之明晰度與反應速度較為有效，但製造具有如此微細之半透光部之光罩並不容易。例如，如上述半透光部之線寬為7 μm以下、甚至5 μm以下之轉印圖案亦必須精緻地轉印。亦可設想到該微細化傾向會進一步發展，要求3 μm以下之線寬。As a photomask for manufacturing a liquid crystal display device, for example, a multi-tone mask can be used, which is formed by a portion corresponding to a source and a drain of a TFT (thin film transistor) as a light-shielding portion, and will be at the source and the cathode. A portion corresponding to the channel portion adjacent to the pole is formed as a semi-transmissive portion. In recent years, with the miniaturization of the pattern of the TFT channel portion and the like, the multi-tone mask is increasingly required to have a fine pattern corresponding to the portion of the channel width in the pattern of the TFT channel portion, that is, the semi-transparent between the light-shielding films. The width of the light portion also tends to be fine. This point is effective for improving the clarity and reaction speed of the liquid crystal, but it is not easy to manufacture a photomask having such a fine semi-transmissive portion. For example, a transfer pattern having a line width of 7 μm or less or even 5 μm or less as in the above-described semi-transmissive portion must be delicately transferred. It is also conceivable that the tendency to miniaturization will further develop, and a line width of 3 μm or less is required.
又，多調式光罩之半透光部之作用係控制光罩之透過光量而賦予被轉印體所期望之曝光量，故，上述半透光部之微細化之同時，有必要對半透光部之光透過率進行正確測定、評估。即，有必要把握形成於半透光部之膜之膜透過率(不論單層或積層之膜構造，以作為結果之該膜之光透過率為膜透過率)。一般認為，作為形成於透明基板上之半透光部之膜透過率之測定方法，可使用如下方法：(1)利用分光光度計進行實測之方法；(2)以將可視光作為光源之顯微鏡獲得二維圖像，基於圖像內所期望點之圖像濃度，由根據圖像濃度與膜之特性(透過率之波長依賴性)的換算式(預先求出)預測所期望波長之透過率之方法。Further, since the semi-transmissive portion of the multi-mode mask controls the amount of light transmitted through the mask to provide a desired amount of exposure to the object to be transferred, it is necessary to make the semi-transmissive portion finer and more semi-transparent. The light transmittance of the light part is correctly measured and evaluated. That is, it is necessary to grasp the film transmittance of the film formed in the semi-transmissive portion (whether or not the film structure of the single layer or the laminate is formed, as a result, the light transmittance of the film is the film transmittance). It is considered that as a method of measuring the film transmittance of the semi-transmissive portion formed on the transparent substrate, the following method can be used: (1) a method of performing measurement using a spectrophotometer; and (2) a microscope using visible light as a light source. Obtaining a two-dimensional image, based on the image density of a desired point in the image, predicting the transmittance of the desired wavelength based on a conversion formula (predetermined) based on the image density and the characteristics of the film (wavelength dependence of transmittance) The method.
上述方法(1)，可以說在進行實際測定此點上可靠性高，但另一方面，由於裝置的制約，使得測定對象物之光點直徑較大，故不適於微細部份之測定。例如，可利用分光光度計測定透過率之界限線寬，根據裝置之情況為1~5 mm左右。因此，若待測定部分之線寬未滿5 mm，會受其周圍之透過率之影響，使測定值之可靠性降低。若待測定部分之線寬不滿1 mm，會成為基本不能測定之狀態。因此，存在就線寬為微米級別之測定區域(例如，微細之半透光部)，無法測定具有可靠性之透過率之問題。In the above method (1), it can be said that the reliability is high at the point of actual measurement. On the other hand, the measurement target object has a large spot diameter, which is not suitable for the measurement of the fine portion. For example, the limit line width of the transmittance can be measured by a spectrophotometer, and it is about 1 to 5 mm depending on the device. Therefore, if the line width of the portion to be measured is less than 5 mm, it is affected by the transmittance of the surrounding portion, and the reliability of the measured value is lowered. If the line width of the portion to be measured is less than 1 mm, it will become a state that cannot be measured. Therefore, there is a problem that the measurement area having a line width of the micrometer level (for example, a fine semi-transmissive portion) cannot be measured and the transmittance of reliability is not measured.
上述方法(2)，可測定較小測定區域之透過率，但以可視光測定之後須換算成所期望之波長，事前把握形成於半透光部之膜之分光特性較為繁雜，且會因膜特性產生誤差等，有難以測定具可靠性之正確的透過率之問題。In the above method (2), the transmittance in a small measurement region can be measured. However, after the visible light is measured, it is converted into a desired wavelength, and the spectroscopic characteristics of the film formed in the semi-transmissive portion are complicated in advance, and the film is complicated. There are errors in characteristics, etc., and it is difficult to determine the correct transmittance with reliability.
本發明係鑒於上述問題點而完成者，其目的之一在於提供可正確測定微細圖案(例如，將形成於透明基板上之半透光膜圖案化而獲得之半透光部)之膜透過率之透過率測定裝置。The present invention has been made in view of the above problems, and an object thereof is to provide a film transmittance which can accurately measure a fine pattern (for example, a semi-transmissive portion obtained by patterning a semi-transmissive film formed on a transparent substrate). The transmittance measuring device.
本發明之透過率測定裝置，其特徵為包含：射出試驗光束之光源裝置；將上述試驗光束聚光而導入被檢體之聚光光學系統；接收透過上述被檢體之透過光束而檢測光量之光檢測裝置；及基於藉由上述光檢測裝置所檢測之光量而求出上述被檢體之光透過率之運算裝置；且，以使上述經聚光之試驗光束於光束腰部附近入射至上述被檢體之被檢查位置之方式，調節上述光源裝置、上述聚光光學系統、及上述被檢體之相對位置。The transmittance measuring apparatus according to the present invention includes: a light source device that emits a test beam; a collecting optical system that collects the test beam and introduces it into the subject; and receives the transmitted light beam transmitted through the subject to detect the amount of light. a light detecting device; and a computing device that obtains a light transmittance of the subject based on the amount of light detected by the light detecting device; and the light-collecting test beam is incident on the light beam near the waist of the beam The relative position of the light source device, the collecting optical system, and the subject is adjusted in such a manner that the sample is inspected.
本發明之透過率測定裝置，較好的是，上述光源裝置具備雷射光源，且設上述聚光光學系統所具備之聚光透鏡之有效直徑為1時，作為平行光入射於上述聚光透鏡之上述試驗光束之直徑為0.4以上0.6以下。In the transmittance measuring apparatus of the present invention, it is preferable that the light source device includes a laser light source, and when the effective diameter of the collecting lens included in the collecting optical system is 1, the incident light is incident on the collecting lens as parallel light. The diameter of the test beam is 0.4 or more and 0.6 or less.
本發明之透過率測定裝置，較好的是，上述光檢測裝置具有於內部具備光偵測器之積分球。In the transmittance measuring apparatus of the present invention, it is preferable that the photodetecting device has an integrating sphere having a photodetector therein.
本發明之透過率測定裝置，較好的是，上述積分球具有供上述透過光束入光之入射孔，且以使上述入射孔之孔徑大於上述透過光束入光的位置之上述透過光束之直徑之方式，配置上述積分球。In the transmittance measuring apparatus of the present invention, preferably, the integrating sphere has an entrance hole through which the transmitted light beam enters light, and a diameter of the transmitted light beam having a diameter larger than a diameter of the incident light beam. In the manner, the above integrating sphere is configured.
本發明之透過率測定裝置，較好的是，上述聚光光學系統包含第1準直透鏡與聚光透鏡。In the transmittance measuring apparatus of the present invention, it is preferable that the collecting optical system includes a first collimating lens and a collecting lens.
本發明之透過率測定裝置，較好的是，在平行於上述被檢體之主平面之面內，為調整上述光源裝置、上述聚光光學系統、及上述被檢體之相對位置，而具備用以使上述光源裝置與上述聚光光學系統移動，或使上述被檢體移動之移動裝置。In the transmittance measuring apparatus of the present invention, it is preferable that the light source device, the collecting optical system, and the relative position of the subject are provided in a plane parallel to a principal plane of the subject. a moving device for moving the light source device and the collecting optical system or moving the subject.
本發明之透過率測定裝置，較好的是，於上述被檢體與上述光檢測裝置之間具有調整上述透過光束之直徑之第2準直透鏡。In the transmittance measuring apparatus of the present invention, preferably, the second collimating lens that adjusts the diameter of the transmitted light beam is provided between the subject and the photodetecting device.
本發明之透過率測定裝置，較好的是，上述聚光光學系統包含使與上述試驗光束之光軸垂直之面之光強度分佈於中央部大於周邊部之光分佈調整機構。In the transmittance measuring apparatus of the present invention, it is preferable that the collecting optical system includes a light distribution adjusting mechanism that distributes light intensity on a surface perpendicular to an optical axis of the test beam to a central portion larger than a peripheral portion.
本發明之光罩之透過率檢查裝置，其特徵為，其係測定具有藉由將形成於透明基板上之光學膜圖案化而形成之轉印圖案的光罩於上述轉印圖案之特定的被檢查位置之透過率者，其具有：射出試驗光束之光源裝置；將上述試驗光束聚光而導入光罩之聚光光學系統；接收透過上述光罩之透過光束而檢測光量之光檢測裝置；及基於藉由上述光檢測裝置所檢測之光量而求出上述光罩於上述被檢查位置之光透過率之運算裝置；且，以使上述經聚光之試驗光束於光束腰部附近入射至上述光罩之被檢查位置之方式，調節上述光源裝置、上述聚光光學系統、及上述光罩之相對位置。A transmittance inspection device for a photomask according to the present invention is characterized in that a photomask having a transfer pattern formed by patterning an optical film formed on a transparent substrate is measured on a specific pattern of the transfer pattern a light source device that emits a test beam; a light collecting optical system that condenses the test beam and introduces the light into the reticle; and a light detecting device that receives a transmitted light beam transmitted through the reticle to detect a light amount; and Calculating a light transmittance of the reticle at the inspection position based on the amount of light detected by the photodetecting device; and causing the condensed test beam to enter the reticle near the waist of the beam The relative position of the light source device, the collecting optical system, and the photomask is adjusted in such a manner as to be inspected.
本發明之光罩之透過率檢查裝置，較好的是，上述光源裝置具備雷射光源，設上述聚光光學系統所具備之聚光透鏡之有效直徑為1時，作為平行光入射於上述聚光透鏡之上述試驗光束之直徑為0.4以上0.6以下。In the transmittance inspection device for a photomask according to the present invention, it is preferable that the light source device includes a laser light source, and when the effective diameter of the condensing lens included in the concentrating optical system is one, the parallel light is incident on the condensing light. The diameter of the test beam of the optical lens is 0.4 or more and 0.6 or less.
本發明之透過率檢查方法係測定具有藉由將形成於透明基板上之光學膜圖案化而形成之轉印圖案的光罩於上述轉印圖案之特定的被檢查位置之透過率者，其特徵為，將自光源裝置射出之試驗光束聚光於上述光罩之被檢查位置，使其在上述試驗光束之光束腰部附近透過上述光罩；使透過後擴散之透過光束入光至光檢測裝置；基於上述光檢測裝置所檢測之光量L，求出上述被檢查位置之光透過率T。The transmittance inspection method of the present invention is characterized in that the transmittance of a mask having a transfer pattern formed by patterning an optical film formed on a transparent substrate at a specific inspection position of the transfer pattern is measured. The test beam emitted from the light source device is condensed at the inspection position of the reticle to pass through the reticle near the beam waist of the test beam; and the transmitted light beam diffused after transmission is incident on the light detecting device; The light transmittance T at the position to be inspected is obtained based on the amount of light L detected by the photodetecting device.
本發明之透過率檢查方法，較好的是，上述光檢測裝置具有於內部具備光偵測器之積分球；上述透過光束係在上述積分球內藉由反復擴散反射而將強度均一化之狀態下，由上述光偵測器檢測光量。In the transmittance inspection method of the present invention, preferably, the photodetecting device includes an integrating sphere having a photodetector therein, and the transmitted beam is in a state in which the intensity is uniformized by repeated diffusion reflection in the integrating sphere. Next, the amount of light is detected by the above photodetector.
本發明之透過率檢查方法，較好的是，上述轉印圖案包含透過曝光光之透光部、與遮蔽曝光光之一部分之半透光部。In the transmittance inspection method of the present invention, it is preferable that the transfer pattern includes a light transmitting portion that transmits the exposure light and a semi-light transmitting portion that blocks a part of the exposure light.
本發明之透過率檢查方法，較好的是，上述轉印圖案進而包含實質性地遮蔽曝光光之遮光部。In the transmittance inspection method of the present invention, it is preferable that the transfer pattern further includes a light shielding portion that substantially shields the exposure light.
本發明之透過率檢查方法，較好的是，上述光罩係用以在形成於被轉印體上之抗蝕膜上，形成具有不同之複數個抗蝕劑殘膜值之抗蝕圖案之多調式光罩。In the transmittance inspection method of the present invention, it is preferable that the mask is used to form a resist pattern having a plurality of resist residual film values on the resist film formed on the transfer target. Multi-tone mask.
本發明之透過率檢查方法，較好的是，將未形成有光學膜之透明基板上之任意部分、或未形成有上述光罩之光學膜之部分作為參照位置；將自上述光源射出之試驗光束聚光於上述參照位置，使其在上述試驗光束之光束腰部附近透過透明基板或上述光罩之上述參照位置；使透過後擴散之透過光束入光至光檢測裝置；使用上述光檢測裝置所檢測之光量L0與上述光量L，求出上述光罩之被檢查位置之光透過率T。In the transmittance inspection method of the present invention, it is preferred that a portion of the transparent substrate on which the optical film is not formed or a portion of the optical film on which the photomask is not formed is used as a reference position; and the test for emitting from the light source is performed. And illuminating the light beam at the reference position to pass through the transparent substrate or the reference position of the reticle near the beam waist of the test beam; and transmitting the transmitted light beam after the transmission to the light detecting device; using the light detecting device The detected light amount L0 and the light amount L are obtained, and the light transmittance T of the inspection position of the mask is obtained.
本發明之光罩製造方法，其包含於透明基板上準備形成有光學膜之光罩毛胚，對上述光學膜實施圖案化，藉此形成轉印圖案，並進行上述轉印圖案之檢查，其特徵為，於上述檢查中使用上述之透過率檢查方法。A method of manufacturing a mask according to the present invention comprises: preparing a mask blank on which an optical film is formed on a transparent substrate, patterning the optical film, thereby forming a transfer pattern, and performing inspection of the transfer pattern; It is characterized in that the above-described transmittance inspection method is used in the above inspection.
本發明之圖案轉印方法，其特徵為使用藉由上述光罩之製造方法所製造之光罩、與曝光裝置，將上述光罩之轉印圖案轉印至被轉印體上。In the pattern transfer method of the present invention, the transfer pattern of the photomask is transferred onto the transfer target by using a photomask manufactured by the method for producing a photomask and an exposure device.
本發明之光罩製品，其特徵為其係以與上述光罩相關聯之狀態，具有藉由上述透過率檢查方法而得之上述光罩之所期望的被檢查位置之光透過率T。The photomask article of the present invention is characterized in that it has a light transmittance T of a desired inspection position of the photomask obtained by the transmittance inspection method in a state associated with the photomask.
根據本發明，即使對於微細圖案等寬度較小之區域，亦可精確地求出相對測定波長之光透過率。According to the present invention, even in a region having a small width such as a fine pattern, the light transmittance at a relative measurement wavelength can be accurately obtained.
本發明之透過率測定裝置之特徵為具有：射出試驗光束之光源裝置、將上述試驗光束聚光而導入被檢體之聚光光學系統、接收透過上述被檢體之透過光束而檢測光量之光檢測裝置、及基於由上述光檢測裝置所檢測之光量而求出上述被檢體之光透過率之運算裝置，且，調節上述光學系統及上述被檢體之相對位置，以使上述經聚光之試驗光束於光束腰部附近入射至上述被檢體之被檢查位置，本發明者獲知，藉由利用該特徵之透過率測定裝置，可正確地測定測定波長之被檢體之膜透過率其本身。以下，將參照圖面就本發明之透過率測定裝置之構成例進行說明。The transmittance measuring apparatus according to the present invention is characterized in that the light source device that emits the test beam, the collecting optical system that collects the test beam and introduces it into the subject, and the light that receives the transmitted light beam transmitted through the subject and detects the amount of light a detecting device and a computing device that obtains a light transmittance of the subject based on the amount of light detected by the photodetecting device, and adjusts a relative position of the optical system and the subject to condense the light The test beam is incident on the inspected position of the subject in the vicinity of the waist of the beam, and the inventors have found that the transmittance of the film of the measurement wavelength can be accurately measured by the transmittance measuring device using the feature. . Hereinafter, a configuration example of the transmittance measuring apparatus of the present invention will be described with reference to the drawings.
圖1所示之本發明第1實施形態之透過率測定裝置至少具備：射出試驗光束之光源101；將自光源101射出之試驗光束導入被檢體之聚光光學系統(此處，包含將來自光源101之射出光作為平行光束111之準直透鏡102、與將來自準直透鏡102之平行光束111聚光於被檢體120之聚光透鏡103)；及使試驗光束透過被檢體120後而擴散之透過光束112入光而進行檢測之光檢測裝置。光檢測裝置具有使透過光束112自入射孔104入光經由擴散反射而空間性地積分後再將其導入光偵測器106之積分球105。又，透過被檢體120之透過光束112會在被檢體120之後方擴散，但藉由於入射孔104之位置，以使入射孔104之直徑大於透過光束112之直徑之方式配置積分球105，可將透過光束112全部提取至積分球105。以下，就透過率測定裝置之構成要件進行具體說明。The transmittance measuring apparatus according to the first embodiment of the present invention shown in FIG. 1 includes at least a light source 101 that emits a test beam, and a collecting optical system that introduces a test beam emitted from the light source 101 into a subject (here, the The light emitted from the light source 101 as the collimator lens 102 of the parallel beam 111 and the condensing lens 103 that condenses the parallel beam 111 from the collimator lens 102 to the subject 120; and the test beam is transmitted through the subject 120 The diffused light beam 112 receives light and detects the light detecting device. The photodetecting device has an integrating sphere 105 that spatially integrates the light that has passed through the light beam 112 from the incident hole 104 through diffusion reflection and then introduces it into the photodetector 106. Further, the transmitted light beam 112 transmitted through the subject 120 is diffused behind the subject 120, but the integrating sphere 105 is disposed such that the diameter of the incident aperture 104 is larger than the diameter of the transmitted beam 112 by the position of the incident aperture 104. The transmitted beam 112 can be all extracted to the integrating sphere 105. Hereinafter, the constituent elements of the transmittance measuring device will be specifically described.
光源裝置至少具備光源101。光源101只要為對被檢體120射出特定之試驗光束者即可。被檢體120為具有包含半透光部之轉印圖案之光罩之情形時，該光源101可作為具有在使用該光罩時所使用之曝光機之光源中所含之波長之光。例如，作為光源101，可使用包含i線、g線、h線之波長域之光，或可射出其中之代表波長之水銀燈、鹵素燈、氙燈、LED光源等。此外，作為光源101亦可使用射出特定之單一波長之光之雷射。The light source device includes at least a light source 101. The light source 101 may be any one that emits a specific test beam to the subject 120. When the subject 120 is a reticle having a transfer pattern including a semi-transmissive portion, the light source 101 can function as light having a wavelength included in a light source of an exposure machine used when the reticle is used. For example, as the light source 101, light including a wavelength region of an i-line, a g-line, or an h-line, or a mercury lamp, a halogen lamp, a xenon lamp, an LED light source, or the like which can emit a representative wavelength thereof can be used. Further, as the light source 101, a laser that emits light of a specific single wavelength can also be used.
又，雷射光其光束(beam)中之光強度可大致具有高斯分佈。即，在垂直於光軸之平面上，光束中央(光軸附近)之光強度隨著相對較大地自光軸遠離(隨著靠近周邊部)而減少。另一方面，包含有複數個波長之上述燈或LED中，未有如上述雷射光般之強度分佈，光束中之光強度大致均一。該情形下，為使其具有類似於雷射光之光強度分佈，亦可具備以調整光束之光分佈為目的之濾光器。此點將於後述。Moreover, the intensity of light in the beam of the laser beam can have a Gaussian distribution. That is, the light intensity at the center of the light beam (near the optical axis) decreases with a relatively large distance from the optical axis (along the vicinity of the peripheral portion) in a plane perpendicular to the optical axis. On the other hand, in the above-mentioned lamp or LED including a plurality of wavelengths, there is no intensity distribution like the above-described laser light, and the light intensity in the light beam is substantially uniform. In this case, in order to have a light intensity distribution similar to that of laser light, a filter for adjusting the light distribution of the light beam may be provided. This point will be described later.
作為用於光源裝置之光源101，在使用水銀燈、鹵素燈、氙燈等之情形下，由於自光源101射出混有複數個波長之光，故可設置選擇性地透過所期望的波長之光之波長選擇濾光器121。另一方面，如雷射或LED般，在光源101射出特定波長之光之情形下，亦可採用不設置波長選擇濾光器121之構成。又，應用搭載有複數個單一波長之LED或雷射光源之光源裝置亦有用。藉由如此切換使用互不相同之單一波長之複數個光源，可測定每個不同波長之透過率。此外，自該等LED或雷射光源射出之單一波長之光，易由光學系統予以聚光，可將光束之直徑縮為較小，因此較為適合。As a light source 101 for a light source device, in the case of using a mercury lamp, a halogen lamp, a xenon lamp or the like, since light of a plurality of wavelengths is emitted from the light source 101, wavelengths of light selectively transmitting light of a desired wavelength can be provided. The filter 121 is selected. On the other hand, as in the case of a laser or an LED, in the case where the light source 101 emits light of a specific wavelength, a configuration in which the wavelength selective filter 121 is not provided may be employed. Further, it is also useful to apply a light source device in which a plurality of LEDs of a single wavelength or a laser light source are mounted. The transmittance of each of the different wavelengths can be measured by switching a plurality of light sources of a single wavelength different from each other in this manner. In addition, the single-wavelength light emitted from the LEDs or the laser light source is easily collected by the optical system, and the diameter of the light beam can be reduced to a small size, so that it is suitable.
使用該等高指向性之光源時，較好為使用擴束器(未圖示)等光學元件將射出之光束之直徑(光束直徑)擴大至特定倍數而導入準直透鏡102。又，使用雷射光源作為光源101時，宜將振盪設為單一模式，光束直徑之形狀宜為圓形或橢圓形。When the light source of such a high directivity is used, it is preferable to introduce the diameter (beam diameter) of the emitted light beam to a specific multiple using an optical element such as a beam expander (not shown) to introduce the collimator lens 102. Further, when a laser light source is used as the light source 101, it is preferable to set the oscillation to a single mode, and the shape of the beam diameter is preferably circular or elliptical.
根據本態樣，聚光光學系統具備準直透鏡102與聚光透鏡103。準直透鏡102具有將自光源101射出之試驗光束作為平行光束111導入聚光透鏡103之功能。藉此，可將自光源101射出之試驗光束有效地導入聚光透鏡103。According to this aspect, the collecting optical system includes the collimator lens 102 and the collecting lens 103. The collimator lens 102 has a function of introducing a test beam emitted from the light source 101 as a parallel beam 111 into the collecting lens 103. Thereby, the test beam emitted from the light source 101 can be efficiently guided to the collecting lens 103.
準直透鏡102較好為將光源101之照射光(試驗光束)調整為平行光。The collimator lens 102 preferably adjusts the illumination light (test beam) of the light source 101 to parallel light.
但，準直透鏡(以下，亦稱為第1準直透鏡)並非必須使光源101之射出光(試驗光束)完全地成為平行光。較好的是，準直透鏡102將自光源101射出之試驗光束調整至適當之光束直徑，使其可入射至後述之聚光光學系統(聚光透鏡103)之直徑內(有效直徑內)。However, the collimator lens (hereinafter also referred to as the first collimator lens) does not necessarily have to completely emit light (test beam) of the light source 101 as parallel light. Preferably, the collimator lens 102 adjusts the test beam emitted from the light source 101 to an appropriate beam diameter so as to be incident into the diameter (within the effective diameter) of the collecting optical system (concentrating lens 103) to be described later.
聚光透鏡103具有使光聚光之功能，其使試驗光束聚光於被檢體120之被檢查位置。即，於試驗光束之直徑最小之部分(光束腰部)附近，以入射於被檢體120之被檢查位置之方式而配置。例如，被檢體120為光罩，被檢查位置為轉印圖案中之半透光部時，使聚光於該半透光部之光束之焦點重合。如此，可於試驗光束之直徑最小之部分測定被檢查位置，故有利於微細圖案之測定。又，根據先前利用分光光度計實際測定微細區域之透過率之方法，由於所期望之被測定位置之周邊部分(例如，遮光部或透光部)之光透過率位於測定點中，會有測定精度低下之問題，但，本第1實施形態所示之透過率測定裝置，可將試驗光束(經聚光之光束)導入被檢查區域(例如半透光部)而使其透過，故可正確地測定半透光膜本身之膜透過率。The condensing lens 103 has a function of condensing light, and condenses the test beam at the inspection position of the subject 120. That is, it is disposed so as to be incident on the inspection position of the subject 120 in the vicinity of the portion (the beam waist) where the diameter of the test beam is the smallest. For example, when the subject 120 is a photomask and the inspection position is a semi-transmissive portion in the transfer pattern, the focus of the light beam condensed on the semi-transmissive portion is overlapped. In this way, the position to be inspected can be measured at the portion where the diameter of the test beam is the smallest, which is advantageous for the measurement of the fine pattern. Further, according to the method of actually measuring the transmittance of the fine region by the spectrophotometer, the light transmittance of the peripheral portion (for example, the light shielding portion or the light transmitting portion) of the desired measurement position is located in the measurement point, and the measurement is performed. The problem of low accuracy is achieved. However, the transmittance measuring apparatus according to the first embodiment can transmit the test beam (light beam) to the inspection area (for example, the semi-transmissive portion) and transmit it. The film transmittance of the semi-transmissive film itself was measured.
此處，所謂光束腰部附近，意指將藉由聚光透鏡103聚光之光束之直徑最小的部分作為光束腰部時，相對該直徑不超過其1.1倍之直徑之區域。又，於以與光軸垂直方向之面切斷光束時之切斷面，中心部之光強度(即最大光強度)為100%時，光束之直徑可為光強度為13.5%(中心部之最大光強度之1/e2 )以上之區域之圓之直徑或是橢圓之長徑。Here, the vicinity of the beam waist portion means a region where the diameter of the light beam condensed by the condensing lens 103 is the beam waist portion, and the diameter is not more than 1.1 times the diameter. Further, when the light intensity at the center portion (i.e., the maximum light intensity) is 100% on the cut surface when the light beam is cut off from the plane perpendicular to the optical axis, the diameter of the light beam may be 13.5% (the center portion) The diameter of the circle of the area above 1/e 2 of the maximum light intensity or the long diameter of the ellipse.
為滿足上述關係，調整聚光透鏡103與被檢體120之光軸方向之相對位置較為重要，但亦可使用後述之移動裝置，如上所述以固定被檢體120之狀態使聚光透鏡103移動，或相反，使被檢體120相對聚光透鏡103移動。或者，亦可使兩者都移動。In order to satisfy the above relationship, it is important to adjust the relative position of the condensing lens 103 and the direction of the optical axis of the subject 120. However, the concentrating lens 103 may be used to fix the subject 120 as described above by using a moving device to be described later. Moving, or conversely, moving the subject 120 relative to the collecting lens 103. Or you can move both.
從聚光點形狀與相對被檢體120之入射角度依存性之觀點來看，聚光透鏡103之開口數NA宜設為0.25~0.65(NA=0.25~0.65)。若開口數NA過小，則於被檢查位置，無法使聚光點形狀足夠小。另一方面，若相對被檢體120之入射角度過大，則相對於被檢體120傾斜(相對被檢體表面垂直以外之方向)入射之光線之比例會增大，使透過率測定之可靠性下降，因此，開口數NA之上限以0.65為宜。The number of openings NA of the condensing lens 103 is preferably 0.25 to 0.65 (NA = 0.25 to 0.65) from the viewpoint of the shape of the condensed spot and the angle of incidence with respect to the object 120. If the number of openings NA is too small, the shape of the condensed spot cannot be sufficiently small at the position to be inspected. On the other hand, if the incident angle with respect to the subject 120 is too large, the ratio of the light incident on the subject 120 (in a direction other than the direction perpendicular to the surface of the subject) increases, and the reliability of the transmittance measurement is improved. Therefore, the upper limit of the number of openings NA is preferably 0.65.
基於上述考慮，聚光透鏡103之開口數NA可根據測定之區域之面積(光罩之半透光部之面積)、測定波長等進行適宜的設定。Based on the above considerations, the number of openings NA of the condensing lens 103 can be appropriately set according to the area of the region to be measured (the area of the semi-transmissive portion of the reticle), the measurement wavelength, and the like.
光檢測裝置具備積分球105。該積分球105具有將自入射孔104入射之光(透過光束112)根據球內壁面之擴散反射進行空間性地積分而均一地入射至光偵測器106之作用。根據圖1，自光源裝置射出之試驗光束聚光於被檢體120之表面而透過之後，透過光束112經由入射孔104入光至積分球105，根據積分球105內部之擴散反射而空間性地被積分。又，積分球105係以將被檢體120之後方擴散之透過光束112全部自入射孔104提取至積分球105之方式而配置。The light detecting device includes an integrating sphere 105. The integrating sphere 105 has a function of uniformly integrating the light (transmitted light beam 112) incident from the incident hole 104 into the photodetector 106 by spatially integrating the diffused reflection of the inner wall surface of the bulb. According to FIG. 1, after the test beam emitted from the light source device is condensed on the surface of the subject 120 and transmitted, the transmitted beam 112 is incident on the integrating sphere 105 through the incident hole 104, and spatially diffused according to the diffusion reflection inside the integrating sphere 105. Be integrated. Further, the integrating sphere 105 is disposed such that all of the transmitted light beams 112 that diffuse the back of the subject 120 are extracted from the incident hole 104 to the integrating sphere 105.
例如，於積分球105之內面具有光偵測器106(亦稱為光功率計)。該光偵測器106可根據設於積分球105之與入射孔104不同之開口部而設置。於積分球105空間性地積分而均一化(平均化)之光入射於該光偵測器106。即，所有通過被檢體120之被檢查位置(來自光源裝置之試驗光束所聚光之範圍)之光被平均化，且與其強度成比例之光均一地入射於光偵測器106，可高精度地測定被檢體120之被檢查位置之光透過量，基於該光透過量可求出光透過率。光偵測器較好為備於積分球之內部。此處，所謂內部是指可使積分球105所積分之光入射至該光偵測器之位置，例如，可包含積分球105之內側、內面。但，由於機械性之制約等無法於內部設置光偵測器之情形下，雖有導致入射於光偵測器之光量減少等之不足，但在可使積分球105所積分之光入射於該光偵測器之位置之範圍內，可變更光偵測器之設置位置。例如，可於積分球之外側設置光偵測器。For example, a photodetector 106 (also referred to as an optical power meter) is provided on the inner surface of the integrating sphere 105. The photodetector 106 can be disposed according to an opening portion of the integrating sphere 105 that is different from the incident aperture 104. The light that is spatially integrated and averaged (averaged) in the integrating sphere 105 is incident on the photodetector 106. That is, all the light passing through the inspected position of the subject 120 (the range in which the test beam from the light source device is concentrated) is averaged, and the light proportional to the intensity thereof is uniformly incident on the photodetector 106, which can be high. The light transmission amount of the inspection target 120 at the position to be inspected is accurately measured, and the light transmittance can be obtained based on the light transmission amount. The photodetector is preferably provided inside the integrating sphere. Here, the term "internal" refers to a position at which the light integrated by the integrating sphere 105 is incident on the photodetector, and may include, for example, an inner side and an inner side of the integrating sphere 105. However, in the case where the photodetector cannot be internally provided due to mechanical constraints or the like, the amount of light incident on the photodetector is reduced, but the light integrated by the integrating sphere 105 is incident on the photodetector. The position of the photodetector can be changed within the range of the position of the photodetector. For example, a photodetector can be placed on the outside of the integrating sphere.
此外，為了於積分球105內空間性地積分而充分地均一化(平均化)，入射孔104之直徑宜為積分球105之直徑之1/4以下。Further, in order to sufficiently integrate (average) the integrating spheres 105 spatially, the diameter of the incident holes 104 is preferably 1/4 or less of the diameter of the integrating sphere 105.
又，上述積分球105宜為於內壁被覆有相對於上述試驗光束之反射率為0.8以上之素材者。Further, it is preferable that the integrating sphere 105 is coated with a material having a reflectance of 0.8 or more with respect to the test beam on the inner wall.
又，亦可不使用積分球105而以光偵測器直接檢測透過光112。即，使用使透過被檢體120之透過光束112直接入光於光偵測器123之受光部之方法(參照圖6)。該情形下，一般而言，光偵測器123，由於其受光部為平面，且存在相對受光部之入射角度依存性，故有必要將受光部相對光軸垂直地設置。使透過被檢體120之透過光束112直接入光於光偵測器123之情形下，即使相對於擴散之透過光束112之光軸垂直地設置受光部，仍無法使該透過光束全部垂直入射，故有產生測定誤差之可能性。又，光偵測器123之受光面必須大於透過光束之直徑，且其大小亦有制約，故在使透過光112全部入光於光偵測器123之情形下，必須非常地縮短被檢體120與光偵測器123之間的距離。另一方面，在使用積分球105之情形下，由於係使透過光束112自具有比光偵測器106之受光面更大之直徑之入射孔104入光，且將於積分球105空間性地積分而均一化(平均化)之光入射於光偵測器106，故即使在透過光束之直徑大於光偵測器106之受光面之情形下，藉由選擇對應尺寸之積分球，仍可不受上述裝置上之制約而進行高精度之測定。Further, the transmitted light 112 can be directly detected by the photodetector without using the integrating sphere 105. That is, a method of directly passing the transmitted light beam 112 transmitted through the subject 120 into the light receiving portion of the photodetector 123 (see FIG. 6) is used. In this case, in general, the photodetector 123 has a light receiving portion that is flat and has an incident angle dependency with respect to the light receiving portion. Therefore, it is necessary to vertically dispose the light receiving portion with respect to the optical axis. When the transmitted light beam 112 transmitted through the subject 120 is directly incident on the photodetector 123, even if the light receiving portion is disposed perpendicularly to the optical axis of the diffused transmitted light beam 112, the transmitted light beam cannot be totally incident. Therefore, there is a possibility of generating measurement errors. Moreover, the light-receiving surface of the photodetector 123 must be larger than the diameter of the transmitted beam, and its size is also restricted. Therefore, in the case where all of the transmitted light 112 is incident on the photodetector 123, the object must be shortened very much. The distance between 120 and photodetector 123. On the other hand, in the case of using the integrating sphere 105, since the transmitted beam 112 is incident from the incident aperture 104 having a diameter larger than the light receiving surface of the photodetector 106, and the integrating sphere 105 will be spatially The integrated and uniformized (averaged) light is incident on the photodetector 106, so that even if the diameter of the transmitted beam is larger than the light receiving surface of the photodetector 106, by selecting the integrating sphere of the corresponding size, it is not acceptable. The measurement on the above device is performed with high precision.
此外，就膜透過率進行更高精度之測定之情形下，可將朝向積分球105之入射光(透過光束112)以一定角度(立體角)固定。該情形下，如圖2所示之本發明第2實施形態之透過率測定裝置，可於被檢體120與積分球105之間，設置使透過光束112成為平行光之準直透鏡122(以下，亦稱為第2準直透鏡)。藉此，透過光束112之全部可容易地入光於積分球105之入射孔104，其入射角亦在一定範圍內，故可使光偵測器106之測定精度進一步提高。Further, in the case where the film transmittance is measured with higher precision, the incident light (transmitted light beam 112) toward the integrating sphere 105 can be fixed at a constant angle (solid angle). In this case, as shown in FIG. 2, in the transmittance measuring apparatus according to the second embodiment of the present invention, a collimating lens 122 that allows the transmitted light beam 112 to be parallel light can be provided between the subject 120 and the integrating sphere 105 (hereinafter , also known as the second collimating lens). Thereby, all of the transmitted light beam 112 can be easily incident on the incident hole 104 of the integrating sphere 105, and the incident angle is also within a certain range, so that the measurement accuracy of the photodetector 106 can be further improved.
又，藉由於被檢體120與積分球105之間設置第2準直透鏡122可減少透過光束112之直徑，故即使不將入射孔104之直徑設為非常大仍可將積分球105自被檢體120離開所期望距離而配置。即，可自由地設定積分球105之配置，具有提高光學元素之設置之自由度之效果。Moreover, since the diameter of the transmitted light beam 112 can be reduced by providing the second collimating lens 122 between the subject 120 and the integrating sphere 105, the integrating sphere 105 can be self-contained even if the diameter of the incident hole 104 is not made very large. The specimen 120 is configured to leave the desired distance. That is, the arrangement of the integrating sphere 105 can be freely set, and the effect of improving the degree of freedom in setting the optical element can be achieved.
又，此處所言之第2準直透鏡122亦與上述第1準直透鏡102相同，並非必須使透過光束112成為完全之平行光。藉由減少光束直徑，將透過光束112確實地提取至積分球105內部亦可。換言之，第2準直透鏡122可作為用以於所期望之位置配置積分球105之光束直徑調整機構發揮功能。Further, the second collimator lens 122 described here is also the same as the first collimator lens 102 described above, and it is not necessary to make the transmitted light beam 112 completely parallel. The transmitted beam 112 can be surely extracted into the inside of the integrating sphere 105 by reducing the beam diameter. In other words, the second collimating lens 122 can function as a beam diameter adjusting mechanism for arranging the integrating sphere 105 at a desired position.
又，圖6之本發明第3實施形態之透過率測定裝置，亦可以準直透鏡使透過被檢體120之透過光束平行化而入光於光偵測器123。但，由於光偵測器有檢測透過光束112以外之迷光(來自裝置內與裝置外之光源，且自被檢查位置以外之處無意圖地入光之光)之可能性，故使用利用積分球之圖1或圖2之裝置更佳。Further, in the transmittance measuring apparatus according to the third embodiment of the present invention, the collimator lens may be used to collimate the transmitted light beam transmitted through the subject 120 to enter the photodetector 123. However, since the photodetector has the possibility of detecting a glare other than the transmitted light beam 112 (light from the inside of the device and the light source outside the device, and unintentionally entering the light from the position to be inspected), the use of the integrating sphere is used. The device of Figure 1 or Figure 2 is preferred.
圖8及圖9係舉例說明上述已說明之搭載有光源裝置、聚光光學系統、光檢測裝置之本發明第1實施例之透過率測定裝置。8 and 9 are diagrams exemplifying the transmittance measuring apparatus according to the first embodiment of the present invention in which the light source device, the collecting optical system, and the photodetecting device are mounted as described above.
本態樣中，光源裝置與聚光光學系統可以使其光軸一致之狀態，配置於被檢體(此處為光罩)120之所期望之位置。又，光檢測裝置，亦可使其軸與上述光軸實質性地一致，以使透過被檢體120之透過光束112完全入光。如此，可檢測出被檢體120之所期望之被檢查位置之光透過率。In this aspect, the light source device and the collecting optical system can be disposed at a desired position of the subject (here, the mask) 120 in a state in which the optical axes thereof are aligned. Further, the photodetecting device may have its axis substantially aligned with the optical axis so that the transmitted light beam 112 transmitted through the subject 120 is completely incident on the light. In this way, the light transmittance of the desired inspection position of the subject 120 can be detected.
此處，光源裝置與聚光光學系統係以使光軸一致之狀態保持為一體(單元A)，且可一面由單元A驅動用橫桿控制移動方向一面移動。且，可於與被檢體之主平面平行之面內配置於所期望之位置。另一方面，光檢測裝置(單元B)，係由單元B驅動用橫桿控制移動方向，但仍可於與被檢體120之主平面平行之面內移動。單元A與單元B，係自兩側對向被檢體120之主平面，光透過率測定時，兩者之光軸一致。於光檢測裝置側設置準直透鏡122之情形(參照圖2)下，亦可使其光軸一致而作為單元B之一部分來設置。Here, the light source device and the collecting optical system are integrally held (unit A) in a state in which the optical axes are aligned, and can be moved while the moving direction is controlled by the unit A driving crossbar. Further, it can be placed at a desired position in a plane parallel to the main plane of the subject. On the other hand, in the photodetecting device (unit B), the moving direction is controlled by the unit B driving crossbar, but it is possible to move in a plane parallel to the main plane of the subject 120. The unit A and the unit B are opposed to the principal plane of the subject 120 from both sides, and when the light transmittance is measured, the optical axes of the two are identical. In the case where the collimator lens 122 is disposed on the light detecting device side (see FIG. 2), the optical axis may be aligned to be provided as a part of the unit B.
上述單元A及單元B，於與被檢體120之主平面平行之面內(即與光軸垂直之面內)，分別連接於用以使其分別朝所期望位置移動之單元A移動裝置301、單元B移動裝置302，且該等移動裝置301及302係由控制裝置300控制(參照圖9)。The unit A and the unit B are respectively connected to the unit A moving device 301 for moving to the desired position in a plane parallel to the main plane of the subject 120 (that is, in a plane perpendicular to the optical axis). The unit B moves the device 302, and the mobile devices 301 and 302 are controlled by the control device 300 (refer to FIG. 9).
再者，被檢體120與單元A、單元B可藉由位置調節機構(未圖示)調整其光軸方向之相對位置。即，將自光源裝置射出之試驗光束藉由聚光光學系統導入被檢體120，使該光束於光束腰部附近入射至被檢體120之被檢查位置，以此方式精確地調節相互位置。該位置調節機構亦可包含於單元A移動裝置301、單元B移動裝置302中。此外，不言而喻，於單元A內，可根據需要調整光源裝置與聚光光學系統之光軸方向上之相互位置；於光源裝置內，可根據需要調整其構造零件(光源101、第1準直透鏡102等)之相互位置。Further, the subject 120, the unit A, and the unit B can be adjusted in relative position in the optical axis direction by a position adjustment mechanism (not shown). In other words, the test beam emitted from the light source device is introduced into the subject 120 by the collecting optical system, and the beam is incident on the inspected position of the subject 120 in the vicinity of the waist of the beam, thereby accurately adjusting the mutual position. The position adjustment mechanism may also be included in the unit A mobile device 301 and the unit B mobile device 302. In addition, it is needless to say that in the unit A, the mutual position of the light source device and the collecting optical system in the optical axis direction can be adjusted as needed; in the light source device, the structural components can be adjusted as needed (light source 101, first) The mutual position of the collimating lens 102, etc.).
光檢測裝置所檢測之光量被送至運算裝置303，從而可運算被檢體之光透過率。運算裝置303可另外使用附隨之記憶體預先記憶保存計算光透過率所需之參數。The amount of light detected by the photodetecting device is sent to the arithmetic unit 303, whereby the light transmittance of the subject can be calculated. The arithmetic unit 303 can additionally use the parameters required to store the calculated light transmittance in advance with the memory.
本發明之透過率測定裝置進而具有保持被檢體120之被檢體支架。本態樣之上述被檢體支架可保持具有一邊為300 mm以上之方形之光罩。例如，較好為可保持一邊為300~1800 mm之方形之光罩。The transmittance measuring device of the present invention further has a subject holder that holds the subject 120. In the above aspect, the subject holder can hold a mask having a square shape of 300 mm or more on one side. For example, it is preferable to maintain a square mask of 300 to 1800 mm on one side.
又，上述態樣中，雖固定被檢體120而設兩單元(A、B)為可動，但反之亦可，再者兩者可動亦可。此外，如圖8所示，被檢體支架可將被檢體120保持為大致水平狀態，或大致垂直地保持。Further, in the above aspect, although the two units (A, B) are fixed while the subject 120 is fixed, the reverse may be used, and the two may be movable. Further, as shown in FIG. 8, the subject holder can hold the subject 120 in a substantially horizontal state or substantially vertically.
於上述透過率測定裝置設置被檢體120(此處為光罩)，可測定該光罩120上所形成之轉印圖案於所期望位置之光透過率。例如，當光罩120為具備透過曝光光之一部分之半透光部者時，即使該半透光部為微細大小之情形下，仍不會受配置於該半透光部之周邊之圖案(透光部、遮光部等)之影響而可測定正確的半透光部之光透過率。The subject 120 (here, a mask) is provided in the transmittance measuring device, and the light transmittance of the transfer pattern formed on the mask 120 at a desired position can be measured. For example, when the mask 120 is provided with a semi-transmissive portion that transmits a part of the exposure light, even if the semi-transmissive portion is of a fine size, it is not affected by the pattern disposed around the semi-transmissive portion ( The light transmittance of the correct semi-transmissive portion can be measured by the influence of the light transmitting portion, the light blocking portion, and the like.
例如，將作為被檢體之光罩120設置於本發明裝置之被檢體支架上。其後，將單元A與單元B設置於以兩者光軸一致之狀態使其朝平行於光罩120之主平面之面內移動而求得透過率之半透光部之位置。此處，作為被檢體之光罩120為用於液晶顯示裝置之大型光罩之情形下，其曝光光之波長為i線~g線，故可使用具有與其實質上相等之波長域之光源進行測定較為有用。或者，光罩使用者亦可使用用作透過率測定之基準之代表波長(例如i線)進行測定亦有用。For example, a mask 120 as a subject is placed on a subject holder of the device of the present invention. Thereafter, the unit A and the unit B are placed at positions where the optical axes of the two are aligned to move parallel to the plane of the main plane of the mask 120, and the transmittance of the semi-transmissive portion is obtained. Here, in the case where the mask 120 as the subject is a large mask for a liquid crystal display device, the wavelength of the exposure light is i line to g line, so that a light source having a wavelength region substantially equal thereto can be used. It is useful to perform the measurement. Alternatively, it is also useful for the user of the mask to perform measurement using a representative wavelength (for example, i-line) used as a reference for transmittance measurement.
劃定與單元A、單元B之光罩面平行之面內之位置，且使自光源裝置射出之試驗光束經由聚光光學系統，以使其光束腰部附近位於欲測定之光罩120之半透光部之方式，調整單元A與被檢體120之相對位置。繼而，確定光檢測裝置之位置以使試驗光束透過該半透光部後之透過光束112確實地自光檢測裝置之積分球105之入射孔104入光。此時，將置於積分球105內之光偵測器106之輸出(透過光量L)提取至運算裝置303。Demarcating the position in the plane parallel to the mask surface of the unit A and the unit B, and passing the test beam emitted from the light source device through the collecting optics so that the vicinity of the beam waist is located halfway through the mask 120 to be measured. In the manner of the light portion, the relative position of the unit A and the subject 120 is adjusted. Then, the position of the photodetecting device is determined such that the transmitted beam 112 after the test beam passes through the semi-transmissive portion is surely incident from the incident aperture 104 of the integrating sphere 105 of the photodetecting device. At this time, the output (transmitted light amount L) of the photodetector 106 placed in the integrating sphere 105 is extracted to the arithmetic unit 303.
欲求出光罩120之半透光部之膜透過率T時，可預先求出膜形成之前的透明基板所具有之參照透過量L0。此可就未形成有膜之透明基板之一部分，或是光罩之轉印圖案中未形成有膜之部分(該等均可稱為「參照位置」)，藉由以與上述相同之方法求出參照透過光量L0而獲得。其後，若如上所述求得半透光部之光透過量L，則該半透光部之光透過率T可由下式而求得：When the film transmittance T of the semi-transmissive portion of the mask 120 is to be obtained, the reference permeation amount L0 of the transparent substrate before the film formation can be obtained in advance. This may be a portion of the transparent substrate on which the film is not formed, or a portion of the transfer pattern of the photomask where no film is formed (these may be referred to as "reference positions"), by the same method as described above. It is obtained by referring to the transmitted light amount L0. Thereafter, when the light transmission amount L of the semi-transmissive portion is obtained as described above, the light transmittance T of the semi-transmissive portion can be obtained by the following formula:
T=L/L0T=L/L0
作為本實施形態所示之透過率測定裝置之被檢體120，以可透過光者即可。作為可使用本實施形態所示之透過率測定裝置進行透過率測定之適當之一例，可舉出具有將形成於透明基板上之光學膜圖案化而獲得之轉印圖案之光罩。The subject 120 as the transmittance measuring device according to the present embodiment may be permeable to light. An example of a suitable transmittance measurement by using the transmittance measuring device according to the present embodiment is a photomask having a transfer pattern obtained by patterning an optical film formed on a transparent substrate.
所謂光學膜，可為遮蔽曝光光之至少一部分(即，透過一部分)之膜(稱為半透光膜)。其可在藉由使用光罩曝光形成於被轉印體上之抗蝕膜而使其以所期望之量減膜以形成所期望之形狀之抗蝕圖案時使用。The optical film may be a film (referred to as a semi-transmissive film) that shields at least a portion (ie, a portion of the exposed light) of the exposure light. It can be used when a resist film formed on a transfer target is exposed by using a photomask to reduce the film by a desired amount to form a resist pattern of a desired shape.
特別係在多調式光罩中，形成具有複數個不同之殘膜量之抗蝕圖案，可利用其製造所期望之電子器件，且極其有用。例如，作為適用於本發明之光罩120，可為用於製造液晶顯示裝置之多調式光罩，除透光部、遮光部之外，其可具有具備一種或複數種曝光光透過率之半透光部。In particular, in a multi-mode mask, a resist pattern having a plurality of different residual film amounts is formed, which can be used to manufacture desired electronic devices, and is extremely useful. For example, as the photomask 120 suitable for the present invention, it may be a multi-tone mask for manufacturing a liquid crystal display device, which may have one or more kinds of exposure light transmittances in addition to the light transmitting portion and the light shielding portion. Light transmitting portion.
圖10係例示上述用途之多調式光罩。其係將形成於透明基板200上之半透光膜201與遮光膜202分別圖案化，成為具有所期望之轉印圖案(半透光膜圖案201p、遮光膜圖案202p)之三調式之光罩20。此處，半透光部215具有微細之寬度，且與透光部220、遮光部210相鄰接。因此，在先前技術中，施行圖案化之後，難以正確把握形成於半透光部之半透光膜之光透過率。Fig. 10 is a view showing a multi-tone mask for the above use. The semi-transmissive film 201 and the light-shielding film 202 formed on the transparent substrate 200 are respectively patterned to form a three-tone mask having a desired transfer pattern (the semi-transmissive film pattern 201p and the light-shielding film pattern 202p). 20. Here, the semi-transmissive portion 215 has a fine width and is adjacent to the light transmitting portion 220 and the light blocking portion 210. Therefore, in the prior art, after patterning, it is difficult to accurately grasp the light transmittance of the semi-transmissive film formed in the semi-transmissive portion.
於遮光膜形成之前，在僅形成有半透光膜之階段(後述之光罩毛胚形成過程)可測定光透過率，但，經由複數個製程施行圖案化之後，成為光罩成品時，其是否顯示同一透過率一事尚不明確。由此，有必要進行作為光罩之微細之半透光部之透過率測定。Before the formation of the light-shielding film, the light transmittance can be measured at the stage where only the semi-transmissive film is formed (the mask blank forming process to be described later). However, when the pattern is formed through a plurality of processes, the film is finished as a mask. Whether or not the same transmittance is displayed is not clear. Therefore, it is necessary to measure the transmittance of the fine semi-transmissive portion as a photomask.
圖11係顯示利用上述多調式光罩之轉印步驟。即，欲對於積層有形成於透明基板500上之複數個薄膜501之被轉印體50形成3維圖案時，利用適宜光罩轉印圖案。此處，使用多調式光罩20，相對形成於被轉印體上之正性抗蝕層502，形成有具有複數個不同之殘膜量之抗蝕圖案502p。藉此，可利用一片光罩進行2片光罩大小之圖案加工。Figure 11 is a diagram showing the transfer step using the above-described multi-tone mask. That is, when a three-dimensional pattern is to be formed on the transfer-receiving body 50 in which a plurality of films 501 formed on the transparent substrate 500 are laminated, a pattern is transferred by using a suitable mask. Here, using the multi-tone mask 20, a resist pattern 502p having a plurality of different residual film amounts is formed on the positive resist layer 502 formed on the transfer target. Thereby, a mask can be used to perform pattern processing of two mask sizes.
作為本發明之半透光膜之透過率之測定，可測定上述之多調式光罩之轉印圖案中之微細(例如寬度在1 mm以下。特別係當寬度為2~500 μm時，適用本發明之必要性高；當為2~100 μm時，本發明之效果尤其顯著)的半透光部之曝光光透過率。As the measurement of the transmittance of the semi-transmissive film of the present invention, it is possible to measure the fineness of the transfer pattern of the multi-tone mask described above (for example, the width is 1 mm or less. Especially when the width is 2 to 500 μm, the application is applicable. The necessity of the invention is high; when it is 2 to 100 μm, the effect of the present invention is particularly remarkable) of the light transmittance of the semi-transmissive portion.
例如，欲測定與遮光部鄰接之半透光部之膜透過率時，若使用測定點較大之現有之分光光度計，則無法僅將處於被檢查位置之半透光部配置於測定視野內，因而無法獲得正確的光透過率。根據本發明，測定視野可為聚光光學系統形成之光束腰部之直徑，故可進行微小之點之測定。For example, when measuring the film transmittance of the semi-transmissive portion adjacent to the light-shielding portion, if a conventional spectrophotometer having a large measurement point is used, it is not possible to arrange only the semi-transmissive portion at the inspection position in the measurement field of view. Therefore, the correct light transmittance cannot be obtained. According to the present invention, the measurement field of view can be the diameter of the beam waist formed by the concentrating optical system, so that the measurement of minute points can be performed.
如上所述，根據近年來光罩之多調式化與圖案之微細化，日益追求能正確地測定形成於透明基板上之光學膜(此處為透過曝光光之一部分之半透光膜)於製造後之光罩中所具有之膜透過率，對於如此之被檢體，利用本實施形態所示之透過率測定裝置非常有效。As described above, according to the recent multi-modulation of the mask and the miniaturization of the pattern, it is increasingly desired to accurately measure the optical film formed on the transparent substrate (here, a semi-transmissive film that transmits a part of the exposure light). The film transmittance of the latter mask is very effective for such a sample by the transmittance measuring device of the present embodiment.
即，於製造後之光罩中，存在比先前藉由利用分光光度計之測定方法可測定之面積更小面積之半透光部，正確知曉該部分之膜透過率對光罩之檢查與產品保障而言都極其重要。That is, in the reticle after manufacture, there is a semi-transmissive portion having a smaller area than that previously measurable by a measuring method using a spectrophotometer, and it is possible to correctly know the film transmittance of the portion and the inspection of the reticle. It is extremely important in terms of protection.
例如，作為如此之光罩，可舉出用於製造液晶顯示裝置之光罩，其係大小為一邊300 mm以上之大型光罩。For example, as such a photomask, a photomask for manufacturing a liquid crystal display device, which is a large-sized photomask having a size of 300 mm or more on one side, may be mentioned.
具有透光部、半透光部、遮光部(3調式)之多調式光罩可用於製造用於液晶顯示裝置之薄膜電晶體(TFT)或彩色濾光片(CF)。或者，亦可使用具有透過率互不相同之2種以上之半透光部之4調式以上之多調式光罩。A multi-mode mask having a light transmitting portion, a semi-transmissive portion, and a light shielding portion (three-tone type) can be used to manufacture a thin film transistor (TFT) or a color filter (CF) for a liquid crystal display device. Alternatively, a multi-tone mask having four or more types of semi-transmissive portions having different transmittances may be used.
再者，即使係2調式之光罩，在將具有特定透過率之光學膜用於遮光部之情形下，亦可作為本發明之被檢體有效地適用。Further, even in the case of using a photomask of a two-modulation type, when an optical film having a specific transmittance is used for the light shielding portion, it can be effectively applied as the subject of the present invention.
以下說明作為適用於本發明之被檢體，可獲得本發明之顯著效果之多調式光罩及其檢查方法、製造方法。In the following, as a subject to be applied to the present invention, a multi-mode mask having a remarkable effect of the present invention, an inspection method, and a production method can be obtained.
多調式光罩可以例如圖12所示之方法來製作。即，首先於透明基板(200)上依序積層半透光膜201與遮光膜202，準備塗布有抗蝕劑203(此處為正性抗蝕劑)之光罩毛胚20b(參照圖12(a))。The multi-mode mask can be fabricated, for example, as shown in FIG. That is, first, the semi-transmissive film 201 and the light-shielding film 202 are sequentially laminated on the transparent substrate (200), and a mask blank 20b coated with a resist 203 (here, a positive resist) is prepared (refer to FIG. 12). (a)).
透明基板200係作為例如包含石英(Si02 )玻璃、或包含Si02 、Al2 O3 、B2 O3 、RO(R為鹼土類金屬)、R2 O(R2 為鹼金屬)等玻璃等之平板而構成。透明基板200之主面(表面及背面)係經研磨而平坦且平滑地構成。透明基板200可設為例如一邊為500 mm~1800 mm左右之方形。透明基板200之厚度可為例如3 mm~20 mm左右。The transparent substrate 200 is made of, for example, glass containing quartz (SiO 2 ) or containing SiO 2 , Al 2 O 3 , B 2 O 3 , RO (R is an alkaline earth metal), and R 2 O (R 2 is an alkali metal). It is composed of a flat plate. The main surface (surface and back surface) of the transparent substrate 200 is polished and flat and smooth. The transparent substrate 200 can be, for example, a square having a side of about 500 mm to 1800 mm. The thickness of the transparent substrate 200 can be, for example, about 3 mm to 20 mm.
半透光膜201包含含有例如鉻(Cr)之材料，可為例如氮化鉻(CrN)、氧化鉻(CrO)、氮氧化鉻(CrON)、氟化鉻(CrF)等鉻化合物。該等半透光膜201可利用包含含有硝酸銨鈰((NH4 )2 Ce(NO3 )6 )及高氯酸(HClO4 )之純水之鉻蝕刻液進行蝕刻。又，亦可為包含含有鉬(Mo)等之金屬材料與矽(Si)之材料之金屬矽化物。例如包含MoSi、MoSix、MoSiN、MoSiON、MoSiCON等。該種半透光膜201可利用氟(F)系蝕刻液(或蝕刻氣體)進行蝕刻。The semi-transmissive film 201 contains a material containing, for example, chromium (Cr), and may be a chromium compound such as chromium nitride (CrN), chromium oxide (CrO), chromium oxynitride (CrON), or chromium fluoride (CrF). The semi-transmissive film 201 can be etched using a chromium etching solution containing pure water containing ammonium cerium nitrate ((NH 4 ) 2 Ce(NO 3 ) 6 ) and perchloric acid (HClO 4 ). Further, it may be a metal telluride containing a material containing a metal material such as molybdenum (Mo) and bismuth (Si). For example, it includes MoSi, MoSix, MoSiN, MoSiON, MoSiCON, and the like. The semi-transmissive film 201 can be etched using a fluorine (F)-based etching solution (or an etching gas).
遮光膜202可為鉻(Cr)或以鉻為主要成份之鉻化合物。又，藉由於遮光膜202之表面積層特定組成之鉻化物(CrO、CrC、CrN等)(未圖示)，可使遮光膜202之表面具有抑制光反射之功能。遮光膜202可利用上述鉻用蝕刻液進行蝕刻。The light shielding film 202 may be chromium (Cr) or a chromium compound mainly composed of chromium. Further, the surface of the light-shielding film 202 can have a function of suppressing light reflection by a chromium compound (CrO, CrC, CrN, etc.) having a specific surface area of the light-shielding film 202 (not shown). The light shielding film 202 can be etched using the above etching solution for chromium.
遮光膜202係實質性地遮蔽曝光光(i線~g線)，透光部220係以使曝光光透過近100%之方式而構成。且，當透明基板之透過率為100%時，半透光膜201可為具有3%以上80%以下之膜透過率者。作為用於製造TFT之光罩，作為用於3調式以上之多調式光罩之半透光部之半透光膜，透過率為5~60%，從光罩使用者加工被轉印體之簡易性此點來看，較好為20~60%。又，亦可利用代表波長(例如i線)評價具備上述透過率者。The light shielding film 202 substantially shields the exposure light (i line to g line), and the light transmitting portion 220 is configured to transmit the exposure light by nearly 100%. Further, when the transmittance of the transparent substrate is 100%, the semi-transmissive film 201 may have a film transmittance of 3% or more and 80% or less. As a photomask for manufacturing a TFT, as a semi-transmissive film for a semi-transmissive portion of a multi-tone mask of three or more types, the transmittance is 5 to 60%, and the transferred body is processed from a mask user. From the point of view of simplicity, it is preferably 20 to 60%. Further, the person having the above-described transmittance can also be evaluated by using a representative wavelength (for example, an i-line).
再者，於2調式(遮光部與透光部)之光罩中，使用於遮光部之遮光膜具有一定透過率之情形下，其透過率較好為3~20%，5~15%則更佳。Further, in the mask of the 2-tone type (light-shielding portion and light-transmitting portion), when the light-shielding film used for the light-shielding portion has a certain transmittance, the transmittance is preferably 3 to 20%, and 5 to 15%. Better.
相對上述光罩毛胚，藉由描畫特定之圖案、使其顯影，而獲得第1抗蝕圖案(203p)(參照圖12(b))。藉由以此為光罩，蝕刻遮光膜202而形成遮光膜圖案202p(參照圖12(c))。The first resist pattern (203p) is obtained by drawing a specific pattern with respect to the mask blank (see FIG. 12(b)). By using this as a photomask, the light shielding film 202 is etched to form a light shielding film pattern 202p (see FIG. 12(c)).
剝離抗蝕圖案203p之後，再度於全面塗布抗蝕劑204(參照圖12(d))。其後，藉由第2次之描畫及顯影，獲得第2抗蝕圖案(204p)(參照圖12(e))。藉由以此為光罩，蝕刻半透光膜201而形成半透光膜圖案201p(參照圖12(f))。其後，剝離殘留之抗蝕圖案204p(參照圖12(g))。如此，多調式(此處為3調式)之光罩完成。After the resist pattern 203p is peeled off, the resist 204 is completely applied again (see FIG. 12(d)). Thereafter, the second resist pattern (204p) is obtained by the second drawing and development (see FIG. 12(e)). The semi-transmissive film pattern 201p is formed by etching the semi-transmissive film 201 as a mask (see FIG. 12(f)). Thereafter, the remaining resist pattern 204p is peeled off (see FIG. 12(g)). Thus, the multi-tone (here 3 mode) mask is completed.
圖12係模式性顯示圖案化製程，其實際圖案形狀依據用途具有其他各種形式。Fig. 12 is a schematic display patterning process whose actual pattern shape has various other forms depending on the use.
根據本發明之製造方法，可於上述圖案化之後設置透過率之檢查步驟。此步驟可確認是否可獲得光罩使用者所求之正確的光透過率，若有不適狀況則返回製造步驟，若無問題則可保證製品。According to the manufacturing method of the present invention, the inspection step of the transmittance can be set after the above patterning. This step confirms whether the correct light transmittance is obtained by the user of the mask, and returns to the manufacturing step if there is any discomfort, and the product can be ensured if there is no problem.
又，可按照光罩使用者之期望，以將利用本發明之檢查方法所得之光透過率之數值與光罩相關聯之形式作為光罩製品而供給。即，由於在接受光罩製品之供給後通常不可能精密地測定其微細部分之光透過率，故使光罩之屬性即透過率與光罩一體化附屬之做法很有意義。該情形下，供給形式可為將光罩與透過率資料物理性地一體化，或者即使各自進行流通，但仍可依據連結彼此之資訊而相關聯。Further, as a mask product, a form in which the value of the light transmittance obtained by the inspection method of the present invention is associated with the reticle can be supplied as desired by the user of the reticle. That is, since it is generally impossible to precisely measure the light transmittance of the fine portion after receiving the supply of the photomask article, it is meaningful to integrate the property of the mask, that is, the transmittance, with the mask. In this case, the supply form may be physically integrated with the reticle and the transmittance data, or may be associated with each other based on information that links each other even if they are circulated.
光罩使用者可參照該透過率資料，使用該光罩與曝光機將光罩所具有之轉印圖案轉印至被轉印體上而製造所期望之電子器件。該情形下，應用於製造步驟之各種條件參數可以該透過率資料為基礎來設定。The mask user can refer to the transmittance data, and use the mask and the exposure machine to transfer the transfer pattern of the mask to the object to be transferred to manufacture a desired electronic device. In this case, various condition parameters applied to the manufacturing steps can be set based on the transmittance data.
又，本實施形態所示之透過率測定裝置中，為了進一步提高測定精度，較好為適當地控制自光源裝置射出之試驗光束之強度分佈等。Further, in the transmittance measuring apparatus described in the present embodiment, in order to further improve the measurement accuracy, it is preferable to appropriately control the intensity distribution of the test beam emitted from the light source device and the like.
例如，圖1所示之透過率測定裝置中，可導入光分佈強度調整機構，其係用以使自準直透鏡102入光於聚光透鏡103之平行光束111之強度分佈成為中央部比周邊部相對明亮之分佈。作為分佈形態之一例，可舉出例如高斯分佈。For example, in the transmittance measuring apparatus shown in FIG. 1, a light distribution intensity adjusting mechanism for introducing the intensity distribution of the parallel light beam 111 of the self-collimating lens 102 into the collecting lens 103 into a central portion than the periphery can be introduced. The relatively bright distribution of the department. An example of the distribution form is, for example, a Gaussian distribution.
經發明者們確認，一般而言，使均一之強度分佈之平行光束111入光於聚光透鏡103而聚光於被檢體120之情形下，會於所聚光之光的峰值之外周發生旁瓣(參照圖3(A)、(B))。為正確地測定微細部分之透過率，有必要使測定光聚光於測定對象部分，但因旁瓣產生會導致一部分光亦洩露至聚光點之外側，從而會因微細圖案之大小與周邊圖案之位置(例如，縫隙寬度)而使得旁瓣入射於被檢體120之被檢查位置以外之位置，而有該洩露之光導致測定精度下降之虞。It has been confirmed by the inventors that, in general, when a uniform intensity distribution parallel light beam 111 is incident on the condensing lens 103 and condensed on the subject 120, it occurs outside the peak of the collected light. Side lobes (see Figures 3 (A), (B)). In order to accurately measure the transmittance of the fine portion, it is necessary to condense the measurement light on the measurement target portion, but some of the light may also leak to the outside of the condensed spot due to the side lobes, which may be due to the size of the fine pattern and the surrounding pattern. The position (for example, the slit width) causes the side lobes to be incident on a position other than the inspection position of the subject 120, and the leaked light causes a decrease in measurement accuracy.
因此，較好的是，使入光於聚光光學系統之平行光束111內之強度分佈為中央部(光軸附近)比周邊部相對明亮之分佈，而不是均一分佈(參照圖4)。藉此，可抑制旁瓣的發生，而以高精度測定測定區域之透過率。Therefore, it is preferable that the intensity distribution in the parallel light beam 111 incident on the collecting optical system is a distribution in which the central portion (near the optical axis) is relatively brighter than the peripheral portion, instead of being uniformly distributed (refer to FIG. 4). Thereby, the occurrence of side lobes can be suppressed, and the transmittance of the measurement region can be measured with high precision.
平行光束111內之光強度分佈之種類，若其強度為相比中央(光軸附近)向周邊方向呈單調遞減者，則無特別限制。例如，可為高斯分佈。當光源為雷射之情形時，可大致獲得高斯分佈。為其他光源之情形時，導入調整光分佈之機構可獲得同樣的效果。The type of the light intensity distribution in the parallel light beam 111 is not particularly limited as long as the intensity thereof is monotonously decreasing toward the peripheral direction from the center (near the optical axis). For example, it can be a Gaussian distribution. When the light source is in the case of a laser, a Gaussian distribution can be roughly obtained. In the case of other light sources, the same effect can be obtained by introducing a mechanism that adjusts the light distribution.
圖5係顯示變化試驗光束光強度分佈時，驗證因旁瓣而自微細圖案洩露之點光之比例的類比結果。分佈形狀為高斯分佈。Fig. 5 is a graph showing the analogy of the ratio of the spot light leaking from the fine pattern due to the side lobes when the light intensity distribution of the test beam is changed. The distribution shape is a Gaussian distribution.
具體而言，變化來自準直透鏡102之平行光束111之高斯分佈，使其入光於聚光透鏡103，根據被檢體120之圖案線寬測定點光洩露之比例。作為聚光透鏡103，係使用開口數NA為0.4與0.65之透鏡，評價波長為405 nm之光。Specifically, the Gaussian distribution of the parallel light beams 111 from the collimator lens 102 is changed to be incident on the condensing lens 103, and the ratio of the point light leakage is measured according to the pattern line width of the subject 120. As the condensing lens 103, a lens having a number of openings NA of 0.4 and 0.65 was used, and light having a wavelength of 405 nm was evaluated.
圖5(A)係顯示使用開口數NA為0.4之聚光透鏡103時，入射於聚光透鏡103之平行光束111之高斯分佈，縱軸顯示強度，橫軸顯示入射於聚光透鏡103之光束剖面(高斯分佈寬l/e2 )。5(A) shows a Gaussian distribution of the parallel beam 111 incident on the collecting lens 103 when the collecting lens 103 having the aperture number NA is used, the vertical axis shows the intensity, and the horizontal axis shows the beam incident on the collecting lens 103. Profile (Gaussian width l/e 2 ).
如上所述，高斯分佈之光束直徑，可定義為在正交於光軸之面測定之峰值之l/e2 (約13.5%)之強度之寬度。該寬度(如圖5(B)所示之「高斯分佈之開口數NA」，亦稱為NAg)相對於聚光透鏡之開口數NA(亦稱為NAc)，較好為As described above, the beam diameter of the Gaussian distribution can be defined as the width of the intensity of l/e 2 (about 13.5%) of the peak measured perpendicular to the plane of the optical axis. The width (the number of openings NA of the Gaussian distribution, also referred to as NAg) as shown in FIG. 5(B) is preferably the number of openings NA (also referred to as NAc) of the condensing lens.
0.4≦NAg/NAc≦0.60.4≦NAg/NAc≦0.6
例如，以聚光透鏡之開口數為基礎，自上述算式之範圍求高斯分佈之開口數NA比，根據與所使用之聚光透鏡之有效直徑(瞳徑)之比，可求出可恰當地使用於本發明之高斯分佈寬度。例如，當設有效直徑為1時，光束之直徑(光束剖面)可設為0.4以上0.6以下之範圍。For example, based on the number of openings of the condensing lens, the ratio of the number of openings of the Gaussian distribution from the range of the above formula can be appropriately determined based on the ratio of the effective diameter (diameter) of the condensing lens to be used. The Gaussian distribution width used in the present invention. For example, when the effective diameter is 1, the diameter of the light beam (beam profile) can be set to a range of 0.4 or more and 0.6 or less.
例如，使用開口數NA為0.4之聚光透鏡時，若平行光束111之高斯分佈之開口數NA為0.4，則就6 μm寬之圖案而言，洩露之光較小(0.61%)，而2 μm寬之圖案，其洩露之光竟達到2.18%(圖5(B))。另一方面，即便使用同一聚光透鏡，若平行光束111之高斯分佈之開口數NA為0.2(NAg/NAc=0.5)，則6 μm寬之圖案之洩露之光為0.0%，2 μm寬之圖案也僅為0.42%，測定精度有所提高。For example, when a condenser lens having a number of apertures NA of 0.4 is used, if the number NA of openings of the Gaussian distribution of the parallel beam 111 is 0.4, the leakage light is small (0.61%) in the pattern of 6 μm wide, and 2 The pattern of μm width has a leakage of 2.18% (Fig. 5(B)). On the other hand, even if the same condensing lens is used, if the number NA of openings of the Gaussian distribution of the parallel beam 111 is 0.2 (NAg/NAc = 0.5), the leakage light of the pattern of 6 μm width is 0.0%, 2 μm wide. The pattern is also only 0.42%, and the measurement accuracy is improved.
又，被檢查位置(例如半透光部)之幅內，含有試驗光束整體之光強度之99.7%以上之狀態(洩露之光為0.3%以下)較佳。99.9%以上(洩露之光為0.1%以下)則更佳。光束直徑中之光強度分佈之調整，可藉由光強度分佈控制機構(例如，變跡濾光器(圖7))之利用、聚光透鏡之開口數NA之選擇、該等之組合而進行。Further, in the width of the inspection position (for example, the semi-transmissive portion), it is preferable that the light intensity of the entire test beam is 99.7% or more (the leakage light is 0.3% or less). More than 99.9% (the leakage light is 0.1% or less) is more preferable. The adjustment of the light intensity distribution in the beam diameter can be performed by the use of a light intensity distribution control mechanism (for example, an apodization filter (Fig. 7)), the selection of the aperture number NA of the condensing lens, and the combination thereof. .
依據以上內容，藉由本申請發明，不會發生先前使用CCD或CMOS等二維感測器獲得圖像之方法所具有的自測定區域所獲得之信號強度影響到於鄰接於該測定區域之區域所獲得之信號強度之變化而產生變動此類問題，可獲得該測定區域之正確的透過率。According to the above, according to the invention of the present application, the signal intensity obtained from the self-measurement region of the method for obtaining an image by using a two-dimensional sensor such as a CCD or a CMOS does not affect the region adjacent to the measurement region. The change in the obtained signal strength causes such a problem to change, and the correct transmittance of the measurement region can be obtained.
如此，本申請發明可於測定微細圖案之透過率時，不受存在於該圖案周邊之圖案的透過率之影響，不會發生因處於該圖案周邊之圖案所產生之檢查光束之衍射，而進行微細圖案之透過率測定。此處，本發明中微細圖案係對具有0.5 μm以上7 μm以下之線寬之半透光部之透過率測定有效。再者，對0.5 μm以上5 μm以下之線寬，更甚者0.5 μm以上3 μm以下之線寬之透過率測定有效。此外，根據本申請發明，可實現先前不可能的關於光罩之微細之半透光部、或上述具有透過率之遮光部之微細圖案的膜透過率之品質保證。再者，可不受周邊條件影響而正確地評價作為膜固有之特性之膜透過率之本申請發明，對於追求更加微細化之光罩之開發亦有效。As described above, when measuring the transmittance of the fine pattern, the present invention can be prevented from being affected by the transmittance of the pattern existing around the pattern without being affected by the diffraction of the inspection beam generated by the pattern around the pattern. The transmittance of the fine pattern was measured. Here, in the present invention, the fine pattern is effective for measuring the transmittance of a semi-transmissive portion having a line width of 0.5 μm or more and 7 μm or less. Further, it is effective to measure the transmittance of a line width of 0.5 μm or more and 5 μm or less, and more preferably a line width of 0.5 μm or more and 3 μm or less. Further, according to the invention of the present application, it is possible to realize the quality assurance of the film transmittance of the fine semi-transmissive portion of the photomask or the fine pattern of the light-shielding portion having the transmittance which was previously impossible. Further, the present invention, which can accurately evaluate the film transmittance as a characteristic inherent to the film, without being affected by the surrounding conditions, is also effective for the development of a mask which is more refined.
另，本發明不限定於上述實施形態，可適當變更後實施。例如，上述實施形態中之材質、圖案構成、構件之個數、大小、處理程序等僅為一例，可在發揮本發明之效果之範圍內進行種種變更而實施。此外，可在不脫離本發明之目的之範圍內進行適當變更而實施。Further, the present invention is not limited to the above embodiment, and can be appropriately modified and implemented. For example, the material, the pattern configuration, the number of the members, the size, the processing procedure, and the like in the above-described embodiment are merely examples, and various modifications can be made within the scope of the effects of the present invention. Further, it can be carried out with appropriate modifications without departing from the scope of the invention.
101．．．光源101. . . light source
102．．．準直透鏡102. . . Collimating lens
103．．．聚光透鏡103. . . Condenser lens
104．．．入射孔104. . . Incident hole
105．．．積分球105. . . Integrating sphere
106．．．光偵測器106. . . Light detector
111．．．平行光束111. . . Parallel beam
112．．．透過光束112. . . Through the beam
120．．．被檢體120. . . Subject
121．．．波長選擇濾光器121. . . Wavelength selective filter
122．．．準直透鏡122. . . Collimating lens
123．．．光偵測器123. . . Light detector
圖1係顯示本發明第1實施形態之透過率測定裝置之概略剖面圖。Fig. 1 is a schematic cross-sectional view showing a transmittance measuring apparatus according to a first embodiment of the present invention.
圖2係顯示本發明第2實施形態之透過率測定裝置之概略剖面圖。Fig. 2 is a schematic cross-sectional view showing a transmittance measuring apparatus according to a second embodiment of the present invention.
圖3(A)、(B)係說明使均一的強度分佈之平行光入光於聚光透鏡之情形的被檢體上之聚光燈之圖。3(A) and 3(B) are views showing a spotlight on a subject in a case where parallel light of a uniform intensity distribution is incident on a condensing lens.
圖4係說明將高斯分佈之光入光於聚光透鏡之情形之剖面圖。Fig. 4 is a cross-sectional view showing a state in which light of a Gaussian distribution is incident on a collecting lens.
圖5(A)、(B)係說明將高斯分佈之光入光於聚光透鏡之情形之圖。5(A) and 5(B) are views showing a state in which light of a Gaussian distribution is incident on a condensing lens.
圖6係顯示使透過測定對象物之透過光直接入光於光偵測器之本發明第3實施形態之透過率測定裝置之概略剖面圖Fig. 6 is a schematic cross-sectional view showing a transmittance measuring apparatus according to a third embodiment of the present invention for directly transmitting the transmitted light transmitted through the measuring object to the photodetector.
圖7係顯示光分佈調整機構之一例之圖。Fig. 7 is a view showing an example of a light distribution adjusting mechanism.
圖8係顯示本發明第1實施例之透過率測定裝置或光罩之透過率檢查裝置之概略立體圖。Fig. 8 is a schematic perspective view showing a transmittance measuring device or a transmittance detecting device for a photomask according to a first embodiment of the present invention.
圖9係顯示本發明圖8所示之透過率測定裝置或光罩之透過率檢查裝置之方塊圖。Fig. 9 is a block diagram showing a transmittance measuring device or a transmittance detecting device of the photomask shown in Fig. 8 of the present invention.
圖10係顯示適用於本發明透過率測定裝置之多調式光罩之一例之剖面圖。Fig. 10 is a cross-sectional view showing an example of a multi-mode mask suitable for use in the transmittance measuring apparatus of the present invention.
圖11係顯示利用圖10所示之多調式光罩之轉印步驟之一例之剖面圖。Fig. 11 is a cross-sectional view showing an example of a transfer step using the multi-tone mask shown in Fig. 10.
圖12(a)-(g)係顯示多調式光罩之製造方法之一例之剖面圖。12(a)-(g) are cross-sectional views showing an example of a method of manufacturing a multi-mode mask.
101．．．光源101. . . light source
102．．．準直透鏡102. . . Collimating lens
103．．．聚光透鏡103. . . Condenser lens
104．．．入射孔104. . . Incident hole
105．．．積分球105. . . Integrating sphere
106．．．光偵測器106. . . Light detector
111．．．平行光束111. . . Parallel beam
112．．．透過光束112. . . Through the beam
120．．．被檢體120. . . Subject
121．．．波長選擇濾光器121. . . Wavelength selective filter
Claims (20)
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| JP2010172729 | 2010-07-30 |
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| TW100125007A TWI497055B (en) | 2010-07-30 | 2011-07-14 | Transmittance measuring apparatus, photomask transmittance inspection apparatus, transmittance inspection method, photomask manufacturing method, pattern transfer method, photomask product |
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| JP (1) | JP2012047732A (en) |
| KR (1) | KR101286374B1 (en) |
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| Publication number | Publication date |
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| CN102374977A (en) | 2012-03-14 |
| KR20120057495A (en) | 2012-06-05 |
| JP2012047732A (en) | 2012-03-08 |
| CN102374977B (en) | 2016-01-20 |
| TW201215877A (en) | 2012-04-16 |
| KR101286374B1 (en) | 2013-07-15 |
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