TWI496316B - Light emitting diode and backlight unit thereof - Google Patents
Light emitting diode and backlight unit thereof Download PDFInfo
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本發明提供一種發光二極體及其相關背光模組，尤指一種具有透鏡(lens)之發光二極體，使發光二極體具有側向光場以及相關背光模組。The invention provides a light-emitting diode and related backlight module, in particular to a light-emitting diode with a lens, so that the light-emitting diode has a lateral light field and an associated backlight module.
近年來發光二極體(以下簡稱LED(light emitting diode))的應用領域不斷地被開發。LED係屬冷發光，具有耗電量低、元件壽命長、無須暖燈時間、反應速度快等優點，再加上其體積小、耐震動、適合量產，容易配合應用需求製成極小或陣列式的元件等優點。發光二極體(LED)裝置為符合應用的需求，往往需要在光束場型(beam pattern)、視角(view angle)、或出光角度上加以配合；故當LED以矩陣排列，需將間距與欲照射平面距離考量好才可在欲照射表面有均勻亮度分佈。In recent years, the field of application of light-emitting diodes (hereinafter referred to as LEDs) has been continuously developed. LED is a cold luminescence, which has the advantages of low power consumption, long component life, no need for warm-up time, fast response, etc., plus its small size, vibration resistance, and mass production, it is easy to make a minimum or array with the application requirements. The advantages of the components. In order to meet the needs of the application, the LED device needs to be matched in the beam pattern, the view angle, or the light exit angle. Therefore, when the LEDs are arranged in a matrix, the pitch and the desire are required. The illumination plane distance is considered to have a uniform brightness distribution on the surface to be illuminated.
一般LED的發光場形為Lambertian發散，其發散角約120度左右，且LED表面法線方向之光線(中心光源)最強。也正因為如此，在組成背光模組時，如欲縮短與照射平面距離或拉大LED間距，照射平面上便會呈現亮點型式之分佈。Generally, the luminous field shape of the LED is Lambertian divergence, and its divergence angle is about 120 degrees, and the light in the normal direction of the LED surface (the central light source) is the strongest. Because of this, when forming a backlight module, if you want to shorten the distance from the illumination plane or widen the LED distance, the distribution of bright spots will appear on the illumination plane.
為了解決上述問題，一般背光模組皆以全側向發光之LED為主，目前已有許多習知技術陸續被公開，包含美國專利4,907,044、2006/0076568以及2007/0195534等，其均在LED封裝體上加上一透鏡結構並在透鏡表面中心附近鍍上反射層，利用透鏡曲率折光至貼近水平方向之大角度出光，以得到接近水平發散的發光場形，但此種LED在法線方向的光強度極弱，幾乎沒有任何出射光線。In order to solve the above problems, the general backlight modules are mainly LEDs with full lateral illumination, and many conventional technologies have been disclosed, including US patents 4,907,044, 2006/0076568, and 2007/0195534, all of which are in LED packages. A lens structure is added to the body and a reflective layer is plated near the center of the lens surface, and the lens curvature is used to refract light to a large angle close to the horizontal direction to obtain a light-emitting field shape close to horizontal divergence, but the LED is in the normal direction. The light intensity is extremely weak and there is almost no outgoing light.
美國專利2006/0102914進一步揭露了具有翅膀形光場的發光二極體結構，其利用兩層曲面中間含有溝槽(gap)的結構，可達到大角度的翅膀形光場，其法線方向之光場強度為與法線夾70-80度的光場強度的5-33%。此外，請參考第1圖，第1圖為美國專利公告第2007/0187705 A1號所揭露習知發光二極體之剖面示意圖。為調整發光二極體100之發光場形，使其呈現翅膀場形，利用晶片110上方具有凹槽130之透鏡120型式以達成不同形狀之發光場形。但上述之LED側向光強度與側向角度控制卻不盡理想，故當LED欲組成背光模組時，其組成之陣列間距亦受限於一定距離以內，以避免造成亮度不夠與亮度不均等問題，但這樣的解決方法卻造成LED數量必須增加，成本也隨之提高。U.S. Patent No. 2006/0102914 further discloses a light-emitting diode structure having a wing-shaped light field, which utilizes a structure in which a gap between two curved surfaces has a gap to achieve a large-angle wing-shaped light field, which is in the normal direction. The intensity of the light field is 5-33% of the intensity of the light field 70-80 degrees from the normal. In addition, please refer to FIG. 1 , which is a schematic cross-sectional view of a conventional light-emitting diode disclosed in US Pat. Pub. No. 2007/0187705 A1. In order to adjust the illuminating field shape of the illuminating diode 100 to have a wing field shape, a lens 120 pattern having a groove 130 above the wafer 110 is used to achieve different shapes of illuminating field shapes. However, the above-mentioned LED lateral light intensity and lateral angle control are not ideal, so when the LED is to form a backlight module, the array spacing of the components is also limited within a certain distance to avoid causing insufficient brightness and uneven brightness. The problem, but such a solution has to increase the number of LEDs and increase the cost.
本發明係提供一種發光二極體，其包含一發光二極體晶片、一基底結構、一螢光粉層，以及一透鏡(lens)。其中該透鏡設 置於該基底結構上。該基底結構具有一凹槽，可使該發光二極體晶片設置於該凹槽內，該螢光粉層於該凹槽內且覆蓋該發光二極體晶片，一曲面側壁，一倒圓錐結構之凹錐(conical concave portion)。該透鏡則具有一曲面側壁，頂部則形成一環形平面，頂部中央具有一倒圓錐結構之凹錐(conical concave portion)。The present invention provides a light emitting diode comprising a light emitting diode chip, a substrate structure, a phosphor layer, and a lens. Where the lens is set Placed on the base structure. The base structure has a recess in which the LED chip is disposed in the recess, the phosphor layer is disposed in the recess and covers the LED chip, a curved sidewall, and an inverted conical structure Conical concave portion. The lens has a curved side wall, the top portion forming an annular plane, and the top center has a conical concave portion of an inverted conical structure.
本發明另提供一種背光模組(backlight unit)，其包含一反射板(reflective sheet)、一擴散板(diffuser plate)，以及複數個本發明之發光二極體。其中該擴散板設置於該反射板上方，該發光二極體設置於該反射板與該擴散板之間，而任兩相鄰該發光二極體之設置間距係介於20釐米(mm)至40釐米(mm)之間，任兩相鄰之發光二極體之設置間距高度與寬度比係介於0.5至1之間。The present invention further provides a backlight unit comprising a reflective sheet, a diffuser plate, and a plurality of light emitting diodes of the present invention. Wherein the diffusing plate is disposed above the reflecting plate, the light emitting diode is disposed between the reflecting plate and the diffusing plate, and the spacing between any two adjacent light emitting diodes is between 20 centimeters (mm) to Between 40 centimeters (mm), the height and width ratio of any two adjacent light-emitting diodes is between 0.5 and 1.
在本專利說明書及後續的申請專利範圍當中使用了某些詞彙來指稱特定的元件。所屬領域中具有通常知識者應可理解，硬體製造商可能會用不同的名詞來稱呼同一個元件。本說明書及後續的申請專利範圍並不以名稱的差異來作為區分元件的方式，而是以元件在功能上的差異來作為區分的準則。在通篇說明書及後續的請求項當中所提及的「包含」係為一開放式的用語，故應解釋成「包含但不限定於」。Certain terms are used throughout this patent specification and the following claims to refer to the particular elements. Those of ordinary skill in the art should understand that a hardware manufacturer may refer to the same component by a different noun. The scope of this specification and the subsequent patent application do not use the difference of the names as the means for distinguishing the elements, but the difference in function of the elements as the criterion for distinguishing. The term "including" as used throughout the specification and subsequent claims is an open term and should be interpreted as "including but not limited to".
請參考第2圖、第3圖。本發明之發光二極體20、30包含一基底結構200、300、一發光二極體晶片252、352、一螢光粉層254、354以及一透鏡(lens)240、340，其中基底結構200、300具有一凹槽250、350，可使發光二極體晶片252、352置於其中，而螢光粉層254、354設置於凹槽250內且覆蓋於發光二極體晶片252、352上，用以將晶片發光波長轉換為其它發光波長並增加發光二極體20、30之出光光色均勻性，透鏡240、340設置於基底結構200、300上，用以調整發光二極體晶片252所發出之光線，改變其發光場形，而基底結構200、300更包含至少一導電端子202、203、302、303，用以提供發光二極體晶片252、352所須發光之電壓。Please refer to Figure 2 and Figure 3. The LEDs 20, 30 of the present invention comprise a base structure 200, 300, a light-emitting diode wafer 252, 352, a phosphor layer 254, 354, and a lens 240, 340, wherein the substrate structure 200 300 has a recess 250, 350, in which the LED chips 252, 352 can be placed, and the phosphor layers 254, 354 are disposed in the recess 250 and over the LED wafers 252, 352. For converting the light-emitting wavelength of the wafer to other light-emitting wavelengths and increasing the uniformity of the light-emitting color of the light-emitting diodes 20 and 30, the lenses 240 and 340 are disposed on the base structures 200 and 300 for adjusting the light-emitting diode wafer 252. The emitted light changes its light-emitting field shape, and the base structures 200, 300 further include at least one conductive terminal 202, 203, 302, 303 for providing a voltage for the light-emitting diode chips 252, 352 to emit light.
此外，基底結構為一多層基板堆疊結構，也就是說，基底結構200、300至少為一第一基板210、310以及一位於第一基板210、310上的第二基板220、320疊合而成，換言之，基底結構200、300亦可包含一第三基板230，疊合於第二基板220、320上方。In addition, the base structure is a multi-layer substrate stack structure, that is, the base structures 200, 300 are at least a first substrate 210, 310 and a second substrate 220, 320 on the first substrate 210, 310 are stacked. In other words, the base structures 200 and 300 may further include a third substrate 230 superposed on the second substrates 220 and 320.
此外，導電端子202、203、302、303為一多層金屬導電架構的一部分，也就是說，基底結構200、300係為該多層金屬導電架構與多層基板堆疊結構結合而成，其中以第2圖為例，該多層金屬導電架構至少包含一第二金屬層222用以形成其正負導電端子202、203以及一位於第一基板210與第二基板220間之第一金屬層212，進而提供一個熱電合一的架構，使得發光二極體晶片252發光所產 生的熱可藉由第二金屬層222導出；其中該多層金屬導電架構形成方法可藉由披覆(coating)、電鍍(plating)、印刷(printing)、金屬薄片夾層或引線框架之方式設置二金屬層212、222；並更包含連接二金屬層212、222的一導體260，該連接方式可為一體成型的引線框架360或於該多層基板間設置至少二穿孔(如第5圖所示之第一孔洞214、215及第6圖所示之第二孔洞224、225)，並於該些穿孔中填充一金屬物(如第2圖及第3圖所示之導體260、360)，進而其中一該穿孔用以提供第一金屬層212與第二金屬層222電性連接，故該些穿孔亦可稱為導電孔，而填充金屬物的方法係可藉由電鍍或灌入金屬漿或金屬膠之方式以達到填充之目的。In addition, the conductive terminals 202, 203, 302, 303 are part of a multilayer metal conductive structure, that is, the base structures 200, 300 are formed by combining the multilayer metal conductive structure and the multilayer substrate stack structure, wherein the second For example, the multilayer metal conductive structure includes at least a second metal layer 222 for forming its positive and negative conductive terminals 202, 203 and a first metal layer 212 between the first substrate 210 and the second substrate 220, thereby providing a The structure of thermoelectric integration makes the light-emitting diode chip 252 emit light The generated heat can be derived by the second metal layer 222; wherein the multilayer metal conductive structure forming method can be set by coating, plating, printing, foil interlayer or lead frame. a metal layer 212, 222; and a conductor 260 connecting the two metal layers 212, 222, the connection may be an integrally formed lead frame 360 or at least two perforations between the multilayer substrates (as shown in Figure 5) The first holes 214, 215 and the second holes 224, 225 shown in FIG. 6 are filled with a metal object (such as the conductors 260, 360 shown in FIGS. 2 and 3). One of the through holes is used to provide the first metal layer 212 to be electrically connected to the second metal layer 222. Therefore, the through holes may also be referred to as conductive holes, and the metal filling method may be performed by plating or pouring metal paste or The way of metal glue to achieve the purpose of filling.
此外，為使發光二極體晶片252、352與基底結構200、300電性連結，則設置至少一導線270、370連接發光二極體晶片252、352及導電端子202、203、302、303。其中引線框架360、第一金屬層212及第二金屬層222之材料係以銅/鎳/銀合金(Cu/Ni/Ag)或銅/鎳/金(Cu/Ni/Au)合金所組成，導體層260材料係以銀(Ag)所組成。In addition, in order to electrically connect the LED chips 252 and 352 to the base structures 200 and 300, at least one of the wires 270 and 370 is connected to the LED chips 252 and 352 and the conductive terminals 202, 203, 302 and 303. The material of the lead frame 360, the first metal layer 212 and the second metal layer 222 is composed of a copper/nickel/silver alloy (Cu/Ni/Ag) or a copper/nickel/gold (Cu/Ni/Au) alloy. The conductor layer 260 material is composed of silver (Ag).
此外，基底結構200、300(亦即第一基板210、310，第二基板220、320以及第三基板230)係由散熱板、導電板、電路板或陶瓷板所構成，其組成材料可為矽材料、陶瓷材料或金屬材料等個別或混合之材料。In addition, the base structures 200, 300 (ie, the first substrate 210, 310, the second substrate 220, 320, and the third substrate 230) are composed of a heat dissipation plate, a conductive plate, a circuit board, or a ceramic plate, and the constituent material thereof may be Individual or mixed materials such as tantalum materials, ceramic materials or metal materials.
此外，基底結構200、300更包含一散熱塊280、380，發光二 極體晶片252、352係位於散熱塊280、380上，其中散熱塊280、380之材質係為銅(Cu)或銀(Ag)，於發光二極體晶片252、352作用而產生熱能時，散熱塊280、380藉由熱傳導的特性可將發光二極體晶片252、352所產生的熱能傳遞出去，於本發明的實施例中，散熱塊280、380亦可視為第一基板210、310之一部分。In addition, the base structures 200 and 300 further include a heat dissipation block 280, 380, and two light-emitting blocks. The polar body wafers 252 and 352 are located on the heat dissipation blocks 280 and 380. The heat dissipation blocks 280 and 380 are made of copper (Cu) or silver (Ag). When the LEDs 252 and 352 are applied to generate heat energy, The heat dissipating blocks 280 and 380 can transmit the thermal energy generated by the LED chips 252 and 352. The heat dissipating blocks 280 and 380 can also be regarded as the first substrate 210 and 310. portion.
請參考第4圖，本發明之透鏡240具有一獨特外形，包括具有一曲面側壁242，透鏡240頂部具有一環形平面244，該透鏡具有一曲面側壁，頂部具有一平面頂部中央具有一倒圓錐結構之凹錐(conical concave portion)。且頂部中央具有一倒圓錐結構之凹錐(conical concave portion)246，透鏡240可調整發光二極體晶片252、352之發光場形，使其呈現側向光場。此外請一併參照第2圖及第3圖，本發明中之發光二極體20、30之基底結構200、300的凹槽250、350邊長A尺寸係小於透鏡240、340直徑之B三分之一，因此發光二極體晶片252、352在凹槽250、350中可以呈現類似點光源之形式發光。Referring to FIG. 4, the lens 240 of the present invention has a unique shape including a curved side wall 242 having a circular flat surface 244 at the top thereof, the lens having a curved side wall and a top portion having a flat top center having an inverted conical structure. Conical concave portion. And a conical concave portion 246 having an inverted conical structure at the center of the top portion, the lens 240 can adjust the illuminating field shape of the LED chips 252, 352 to present a lateral light field. In addition, referring to FIG. 2 and FIG. 3 together, the lengths A of the grooves 250 and 350 of the base structures 200 and 300 of the LEDs 20 and 30 of the present invention are smaller than the diameters of the lenses 240 and 340. In one step, the LED chips 252, 352 can thus emit light in the form of a point source in the grooves 250, 350.
此外，以本發明實施例而言，於發光二極體20底部更包含一第三金屬層，用以形成一驅動電路(圖未示)，也就是提供至少一對應之正負電壓於該驅動電路，再藉由與發光二極體晶片252電性導通之二正負導電端子202、203而使其產生光源。參考第5圖至第8圖且搭配第2圖為例，當第一基板210與第二基板220堆疊時，第一孔洞214、215、216、217與第二孔洞224、225、226、227填充該 金屬物使其與第三金屬層所形成之相對應該驅動電路產生電性連接，以單一晶片為例，發光二極體晶片252之正極可利用導線270連接導電端子202後，透過任一第一孔洞215、217與該任一第一孔洞相對的第二孔洞225、227內之該金屬物外接相對應該驅動電路之正極接點；同理，發光二極體晶片252之負極可利用導線270連接導電端子203後，透過任一第一孔洞214、216與該任一第一孔洞相對的第二孔洞224、226內之該金屬物外接相對應該驅動電路之負極接點，如此完成。其中，發光二極體晶片252之正負極亦可利用導線270分別連接另一導電端子202、203。In addition, in the embodiment of the present invention, a third metal layer is further included on the bottom of the LED 20 for forming a driving circuit (not shown), that is, providing at least one corresponding positive and negative voltage to the driving circuit. The light source is generated by the two positive and negative conductive terminals 202, 203 electrically connected to the LED chip 252. Referring to FIG. 5 to FIG. 8 and taking FIG. 2 as an example, when the first substrate 210 and the second substrate 220 are stacked, the first holes 214, 215, 216, 217 and the second holes 224, 225, 226, 227 Fill this The metal object is electrically connected to the driving circuit by the third metal layer. For example, in the case of a single wafer, the positive electrode of the LED chip 252 can be connected to the conductive terminal 202 by using the wire 270, and then passed through any first The metal objects in the second holes 225 and 227 opposite to the first holes are externally connected to the positive electrode contacts of the driving circuit. Similarly, the negative electrodes of the LED chips 252 can be connected by wires 270. After the conductive terminals 203, the metal objects in the second holes 224, 226 opposite to any of the first holes 214, 216 are externally connected to the negative electrode contacts of the corresponding driving circuit, and thus completed. The positive and negative electrodes of the LED chip 252 may also be connected to the other conductive terminals 202 and 203 by wires 270, respectively.
請參考第9圖，第9圖為本發明發光二極體20第一實施例之第一基板210底視圖。發光二極體20之第一基板210底部具有一第三金屬層，其包含複數個金屬墊218，至少二第一基板210底部四端之金屬墊218與發光二極體晶片252之正負極相連接，並提供該正負電壓於該驅動電路，且與發光二極體晶片252電性導通產生光源。此外，亦可於該發光二極體20中置入複數個發光二極體晶片252於凹槽250中(凹槽250係搭配第2圖所示)，其中該複數個晶片電性連接關係可視需求為串聯或並聯。更進一步的說，該晶片間的串並聯關係可藉由該些金屬墊218搭配外接相對該應該驅動電路之正負極接點以及導線270搭配導電端子202、203加以調整。舉例來說，與外部驅動電路電性連接該些金屬墊218，僅提供一對正負電性，將該二晶片藉由該些導線270與該些導電端子202、203電性聯接，或者，將一晶片正極與另一晶片負極直接以另一導線連接該二晶片，則可 提供二晶片之電性串聯關係；其中正負極可視需求互換。Please refer to FIG. 9. FIG. 9 is a bottom view of the first substrate 210 of the first embodiment of the light-emitting diode 20 of the present invention. The bottom surface of the first substrate 210 of the LED body 20 has a third metal layer including a plurality of metal pads 218, at least two metal pads 218 at the bottom of the first substrate 210 and positive and negative phases of the LED chip 252. The positive and negative voltages are connected to the driving circuit, and are electrically connected to the LED chip 252 to generate a light source. In addition, a plurality of LED chips 252 may be disposed in the recess 250 in the LED (the recess 250 is matched with FIG. 2), wherein the electrical connection relationship of the plurality of wafers is visible. The requirements are in series or in parallel. Furthermore, the series-parallel relationship between the wafers can be adjusted by using the metal pads 218 in combination with the positive and negative contacts of the corresponding driving circuit and the wires 270 with the conductive terminals 202, 203. For example, the metal pads 218 are electrically connected to the external driving circuit, and only a pair of positive and negative charges are provided. The two wires are electrically connected to the conductive terminals 202 and 203 by the wires 270, or A positive electrode of one wafer and a negative electrode of another wafer are directly connected to the two wafers by another wire, An electrical series relationship of two wafers is provided; wherein the positive and negative electrodes are interchangeable according to requirements.
請搭配參照第2圖且由第5圖至第8圖可知，一第一基板210具有至少第一金屬層212，其中第一金屬層212具有複數個第一孔洞214、215、216、217。由第6圖可知，一第二基板320具有至少一第二金屬層322，其中第二金屬層222具有複數個第二孔洞224、225、226、227。為提供發光二極體晶片252與外部電源的電性連接，則第一孔洞214、215、216、217與第二孔洞224、225、226、227兩兩相對相互重疊，並填充入一金屬物形成一貫穿第一基板與第二基板之導體260(又稱導電孔)，使正負導電端子202、203可藉由導體260與外部電源電性連接，此外，部份的第二孔洞224、225中的導體260更用以提供第一金屬層212與第二金屬層222電性連接。由第7圖可知，第三基板230係疊合於第二基板220上方，且第三基板230具有一容置空間，可容置連接於發光二極體晶片252以及第二金屬層222之間的導線270，以保護發光二極體20之線路。最後由第8圖可知，透鏡240係疊合於第三基板230上方，可調整發光二極體晶片252之發光場形。Referring to FIG. 2 and FIG. 5 to FIG. 8 , a first substrate 210 has at least a first metal layer 212 , wherein the first metal layer 212 has a plurality of first holes 214 , 215 , 216 , 217 . As can be seen from FIG. 6, a second substrate 320 has at least one second metal layer 322, wherein the second metal layer 222 has a plurality of second holes 224, 225, 226, 227. In order to provide electrical connection between the LED chip 252 and the external power source, the first holes 214, 215, 216, 217 and the second holes 224, 225, 226, 227 are opposite to each other and filled with a metal object. Forming a conductor 260 (also referred to as a conductive hole) penetrating the first substrate and the second substrate, so that the positive and negative conductive terminals 202, 203 can be electrically connected to the external power source through the conductor 260, and further, the second hole 224, 225 The conductor 260 is further configured to provide the first metal layer 212 and the second metal layer 222 to be electrically connected. As shown in FIG. 7 , the third substrate 230 is superposed on the second substrate 220 , and the third substrate 230 has an accommodating space therebetween for being connected between the LED 252 and the second metal layer 222 . The wire 270 is to protect the line of the light emitting diode 20. Finally, it can be seen from FIG. 8 that the lens 240 is superposed on the third substrate 230 to adjust the illuminating field shape of the LED chip 252.
本發明利用透鏡240、340結構改良發光二極體20、30之發光場形，使發光二極體20、30具有一翅膀形狀之發光場形，同時搭配將發光二極體晶片252、352設置於凹槽250、350內，且凹槽250、350與透鏡240、340具有特殊比例的尺寸關係，使發光二極體晶片252、352以近似點光源之形式發光，如此一來，發光二極體20、30 可以產生中心強度較斜向光強度稍弱之翅膀狀發光場形，因此當發光二極體20、30之設置間距拉大後，或與欲照射面距離拉近時，兩發光二極體20、30間之亮度與發光二極體20、30上方之亮度不至於相差太多，因此在提供均勻光強度的條件下，本發明所揭露之發光二極體20、30可以更大之間距配置。換言之，當將發光二極體20、30應用於直下式背光模組的背光源時，具有大視角的發光二極體20、30可以有效縮短背光模組與薄膜電晶體-液晶顯示器模組的距離。此外，本發明所揭露之發光二極體20、30結構所發出之光線的波長範圍介於300奈米(nm)至700奈米之間，請參照第10圖及第11圖，第10圖為本發明發光二極體C與習知發光二極體D光強度與發光角度關係之曲線圖，第11圖為發光二極體C與習知發光二極體D照射於平面上亮度分布圖。由第10圖可知，習知發光二極體D結構所提供發光場形之最大強度在中心法線方向，而偏離中心法線方向越遠，其光強度呈現遞減之現象。然本發明發光二極體C結構所提供發光場形，其場形強度最大值約介於與法線夾40-70度角間，而法線方向之光強度約為最大光強度極大值之40%至70%。由第11圖可知，習知發光二極體D之光亮度半徑較本發明發光二極體C小。故由上述可知，本發明之發光二極體20、30可有效改變發光二極體晶片252、352之發光光場，其翅膀形狀之發光場形可使發光二極體20、30具有大視角發光及較大之照射半徑之特性。The invention utilizes the structures of the lenses 240 and 340 to improve the luminous field shape of the light-emitting diodes 20 and 30, so that the light-emitting diodes 20 and 30 have a shape of a light-emitting field of a wing shape, and at the same time, the light-emitting diode chips 252 and 352 are disposed. In the grooves 250, 350, and the grooves 250, 350 and the lenses 240, 340 have a special proportional relationship, so that the LED chips 252, 352 emit light in the form of an approximate point source, thus, the light emitting diode Body 20, 30 A wing-shaped illuminating field shape having a center intensity slightly weaker than the oblique light intensity can be generated, so that when the arrangement pitch of the illuminating diodes 20, 30 is enlarged, or when the distance from the surface to be illuminated is increased, the two illuminating diodes 20 are The brightness of the 30 rooms and the brightness above the LEDs 20 and 30 are not too different, so that the light-emitting diodes 20 and 30 disclosed in the present invention can be arranged at a larger distance under the condition of providing uniform light intensity. . In other words, when the light emitting diodes 20 and 30 are applied to the backlight of the direct type backlight module, the light emitting diodes 20 and 30 having a large viewing angle can effectively shorten the backlight module and the thin film transistor-liquid crystal display module. distance. In addition, the wavelength of the light emitted by the structure of the light-emitting diodes 20 and 30 disclosed in the present invention ranges from 300 nanometers (nm) to 700 nm. Please refer to FIG. 10 and FIG. 11 and FIG. The graph of the relationship between the light intensity and the light-emitting angle of the light-emitting diode C of the present invention and the conventional light-emitting diode C, and the eleventh figure shows the brightness distribution of the light-emitting diode C and the conventional light-emitting diode D on the plane. . It can be seen from Fig. 10 that the maximum intensity of the illuminating field shape provided by the conventional LED structure D is in the center normal direction, and the farther away from the center normal direction, the light intensity is decremented. However, the illuminating field shape provided by the light-emitting diode C structure of the present invention has a field intensity maximum of about 40-70 degrees from the normal clip, and the light intensity in the normal direction is about 40 of the maximum light intensity. % to 70%. As can be seen from Fig. 11, the luminance radius of the conventional light-emitting diode D is smaller than that of the light-emitting diode C of the present invention. Therefore, it can be seen from the above that the light-emitting diodes 20 and 30 of the present invention can effectively change the light-emitting light field of the light-emitting diode chips 252 and 352, and the light-emitting field shape of the wing shape can make the light-emitting diodes 20 and 30 have a large viewing angle. Luminescence and the characteristics of a larger illumination radius.
請參考第12圖。第12圖為應用本發明所揭露之發光二極體20、30之背光模組400之示意圖。其中背光模組(back light unit)400 包含一反射板(reflective sheet)420、一擴散板(diffuser plate)440以及複數個發光二極體20(或發光二極體30)。其中擴散板440設置於反射板420上方，複數個發光二極體20則設置於反射板420與擴散板440之間。此外，擴散板440上方可另增設一第一擴散膜(diffuser film)442、一第一增亮膜(brightuess enhancement film-BEF)460、一第二增亮膜462以及一第二擴散膜444。其中發光二極體20所產生之光線由擴散板440散射至顯示面板(圖未顯示)，於發光二極體20下方之反射板420則可將發光二極體20向下散射之光線反射至擴散板440，以有效利用發光二極體20所發出之光線。而擴散板440上之擴散膜460則具有導光功能。在背光模組400中，由於發光二極體20具有如前述翅膀狀之發光場形，因此在背光模組400內任兩相鄰發光二極體20之設置間距可介於20釐米(mm)至40釐米(mm)之間，較佳為25釐米(mm)至29釐米(mm)之間。除此之外，任兩相鄰之發光二極體20設置間距之高度與寬度比介於0.5至1之間，故利用本發明之發光二極體20所組成之背光模組400，可有效減少發光二極體20的數量，同時符合背光模組400之光強度及均勻度需求。此外，發光二極體20與擴散板440之距離H亦因發光二極體20之側向光場特性可進一步縮小，進而達到背光模組400薄型化之目的。Please refer to Figure 12. FIG. 12 is a schematic diagram of a backlight module 400 to which the LEDs 20 and 30 of the present invention are applied. The backlight unit 400 A reflective sheet 420, a diffuser plate 440, and a plurality of light emitting diodes 20 (or light emitting diodes 30) are included. The diffusing plate 440 is disposed above the reflecting plate 420, and the plurality of light emitting diodes 20 are disposed between the reflecting plate 420 and the diffusing plate 440. In addition, a first diffuser film 442, a first brightness enhancement film (BEF) 460, a second brightness enhancement film 462, and a second diffusion film 444 may be added to the diffusion plate 440. The light generated by the LEDs 20 is scattered by the diffusion plate 440 to the display panel (not shown), and the reflector 420 under the LEDs 20 reflects the light scattered downwardly from the LEDs 20 to The diffusion plate 440 is used to effectively utilize the light emitted by the light-emitting diode 20. The diffusion film 460 on the diffusion plate 440 has a light guiding function. In the backlight module 400, since the LEDs 20 have the shape of the wings as described above, the spacing between the two adjacent LEDs 20 in the backlight module 400 can be 20 cm (mm). Between 40 centimeters (mm), preferably between 25 centimeters (mm) and 29 centimeters (mm). In addition, the height and width ratio of the two adjacent light-emitting diodes 20 are between 0.5 and 1, so that the backlight module 400 composed of the light-emitting diode 20 of the present invention can be effectively used. The number of the light-emitting diodes 20 is reduced while meeting the light intensity and uniformity requirements of the backlight module 400. In addition, the distance H between the LEDs 20 and the diffuser 440 can be further reduced due to the lateral light field characteristics of the LEDs 20, thereby achieving the purpose of thinning the backlight module 400.
本發明揭露之發光二極體，其利用特殊外型之透鏡以及凹槽與透鏡間相對特殊比例作用，藉以調整發光二極體之發光場形特徵，形成具有側向光場之發光二極體，其中，本發明之技術內容特徵不 僅侷限於第2圖、第3圖中利用打線技術(wire bounding)將晶片與基底結構上之導電端子連接以提供發光二極體晶片所需發光之電壓，本發明亦適用於覆晶封裝(Flip-Chip)技術，於晶片上生成至少一凸塊(bump)，再將晶片翻轉(flip)使該凸塊與基底結構直接連結，也就是說，不論應用於何種封裝技術，只要於基底結構上裝設本發明特殊形狀之透鏡皆為本發明之技術內容特徵，而本發明所提供之背光模組，可利用本發明具有側向光場之發光二極體，在不影響照明均勻度及亮度之情況下，將發光二極體設置之陣列間距加大，可有效減少發光二極體使用數目以達到降低成本之目的。此外，為因應目前背光市場朝向輕薄發展，本案之發光二極體可應用於在直下式背光模組之設計上，使其達到厚度薄形化之目的。且本發明更可應用於路燈或一般光源之應用上，使其達到更大的設計彈性，並使模組成本更低，且極具競爭力。The light-emitting diode disclosed in the present invention utilizes a special outer lens and a relatively special ratio between the groove and the lens to adjust the illuminating field shape of the light-emitting diode to form a light-emitting diode having a lateral light field. , wherein the technical content of the present invention is not characterized The present invention is also limited to the use of wire bounding to connect the wafer to the conductive terminals on the base structure to provide the voltage required for the light-emitting diode wafer to be illuminated in the second and third figures. The present invention is also applicable to flip chip packages ( Flip-Chip technology, which generates at least one bump on a wafer, and flips the wafer to directly connect the bump to the base structure, that is, regardless of the packaging technology, as long as the substrate is applied The lens having the special shape of the present invention is characterized by the technical content of the present invention, and the backlight module provided by the present invention can utilize the light-emitting diode of the present invention having a lateral light field without affecting the illumination uniformity. In the case of brightness, the array spacing of the light-emitting diodes is increased, which can effectively reduce the number of light-emitting diodes used to achieve cost reduction. In addition, in order to cope with the current development of the backlight market, the light-emitting diode of the present invention can be applied to the design of the direct-lit backlight module to achieve the purpose of thinning the thickness. Moreover, the invention can be applied to the application of street lamps or general light sources to achieve greater design flexibility, and the module is lower in cost and competitive.
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.
100、20、30‧‧‧發光二極體100, 20, 30‧‧‧Lighting diodes
110、252、352‧‧‧發光二極體晶片110, 252, 352‧ ‧ luminescent diode chip
120、240、340‧‧‧透鏡120, 240, 340‧ ‧ lens
130、250、350‧‧‧凹槽130, 250, 350‧‧‧ grooves
200、300‧‧‧基底結構200, 300‧‧‧ base structure
202、203、302、303‧‧‧導電端子202, 203, 302, 303‧‧‧ conductive terminals
210、310‧‧‧第一基板210, 310‧‧‧ first substrate
212‧‧‧第一金屬層212‧‧‧First metal layer
214、215、216、217‧‧‧第一孔洞214, 215, 216, 217‧‧ first holes
218‧‧‧金屬墊218‧‧‧Metal pad
220、320‧‧‧第二基板220, 320‧‧‧ second substrate
222‧‧‧第二金屬層222‧‧‧Second metal layer
224、225、226、227‧‧‧第二孔洞224, 225, 226, 227‧‧ second hole
230‧‧‧第三基板230‧‧‧ Third substrate
254、354‧‧‧螢光粉層254, 354‧‧‧Fluorescent powder layer
242‧‧‧曲面側壁242‧‧‧ curved side wall
244‧‧‧環形平面244‧‧‧Circular plane
246‧‧‧凹錐246‧‧‧ concave cone
260‧‧‧導體260‧‧‧ conductor
360‧‧‧引線框架360‧‧‧ lead frame
270、370‧‧‧導線270, 370‧‧‧ wires
280、380‧‧‧散熱塊280, 380‧‧ ‧ heat sink
400‧‧‧背光模組400‧‧‧Backlight module
420‧‧‧反光板420‧‧‧reflector
440‧‧‧擴散板440‧‧‧Diffuser
442‧‧‧第一擴散膜442‧‧‧First diffusion film
444‧‧‧第二擴散膜444‧‧‧Second diffusion film
460‧‧‧第一增亮膜460‧‧‧First Brightening Film
462‧‧‧第二增亮膜462‧‧‧Second brightness enhancement film
第1圖為習知發光二極體之剖面示意圖。Figure 1 is a schematic cross-sectional view of a conventional light-emitting diode.
第2圖為本發明發光二極體第一實施例之剖面圖。Fig. 2 is a cross-sectional view showing a first embodiment of the light-emitting diode of the present invention.
第3圖為本發明發光二極體第二實施例之剖面圖。Figure 3 is a cross-sectional view showing a second embodiment of the light-emitting diode of the present invention.
第4圖為本發明透鏡之剖面圖。Figure 4 is a cross-sectional view of the lens of the present invention.
第5圖為本發明發光二極體第一實施例之第一基板示意圖。Figure 5 is a schematic view showing a first substrate of the first embodiment of the light-emitting diode of the present invention.
第6圖為本發明發光二極體第一實施例之第二基板示意圖。Figure 6 is a schematic view showing a second substrate of the first embodiment of the light-emitting diode of the present invention.
第7圖為本發明發光二極體第一實施例之第三基板示意圖。Figure 7 is a schematic view showing a third substrate of the first embodiment of the light-emitting diode of the present invention.
第8圖為本發明發光二極體第一實施例加入透鏡之示意圖。Figure 8 is a schematic view showing the first embodiment of the light-emitting diode of the present invention incorporated into a lens.
第9圖為本發明發光二極體第一實施例之基板底視圖。Figure 9 is a bottom view of the substrate of the first embodiment of the light-emitting diode of the present invention.
第10圖為本發明發光二極體C與習知發光二極體D光強度與發光角度關係之曲線圖。Fig. 10 is a graph showing the relationship between the light intensity of the light-emitting diode C and the conventional light-emitting diode D and the light-emitting angle.
第11圖為本發明發光二極體C與習知發光二極體D照射於平面上之亮度分佈圖。Fig. 11 is a view showing the luminance distribution of the light-emitting diode C of the present invention and a conventional light-emitting diode D on a plane.
第12圖為本發明背光模組之示意圖。Figure 12 is a schematic view of a backlight module of the present invention.
20‧‧‧發光二極體20‧‧‧Lighting diode
200‧‧‧基底結構200‧‧‧Base structure
202、203‧‧‧導電端子202, 203‧‧‧ conductive terminals
210‧‧‧第一基板210‧‧‧First substrate
212‧‧‧第一金屬層212‧‧‧First metal layer
220‧‧‧第二基板220‧‧‧second substrate
222‧‧‧第二金屬層222‧‧‧Second metal layer
230‧‧‧第三基板230‧‧‧ Third substrate
240‧‧‧透鏡240‧‧‧ lens
250‧‧‧凹槽250‧‧‧ Groove
252‧‧‧發光二極體晶片252‧‧‧Light Diode Wafer
254‧‧‧螢光粉層254‧‧‧Fluorescent powder layer
260‧‧‧導體260‧‧‧ conductor
270‧‧‧導線270‧‧‧ wire
280‧‧‧散熱塊280‧‧‧heat block
Claims (32)
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| Application Number | Priority Date | Filing Date | Title |
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| TW098109624A TWI496316B (en) | 2009-03-24 | 2009-03-24 | Light emitting diode and backlight unit thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098109624A TWI496316B (en) | 2009-03-24 | 2009-03-24 | Light emitting diode and backlight unit thereof |
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| TW201036201A TW201036201A (en) | 2010-10-01 |
| TWI496316B true TWI496316B (en) | 2015-08-11 |
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| TW098109624A TWI496316B (en) | 2009-03-24 | 2009-03-24 | Light emitting diode and backlight unit thereof |
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| TW (1) | TWI496316B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI464917B (en) * | 2010-11-15 | 2014-12-11 | Lite On Electronics Guangzhou | Led package and method for manufacturing the same |
| TWI454631B (en) * | 2011-12-29 | 2014-10-01 | Univ Nat Kaohsiung Applied Sci | Adjustable variable light emitting diode lens and lamp with its own |
| CN103682060B (en) * | 2012-09-14 | 2016-09-21 | 展晶科技(深圳)有限公司 | Light-emitting diode lamp source device |
| TWI548126B (en) * | 2014-04-11 | 2016-09-01 | 隆達電子股份有限公司 | Solid-state light emitting device |
| CN104332134B (en) * | 2014-10-24 | 2016-08-10 | 中国科学院半导体研究所 | A kind of LED shows module system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060163596A1 (en) * | 2005-01-26 | 2006-07-27 | Gi-Cherl Kim | Two dimensional light source using light emitting diode and liquid crystal display device using the two dimensional light source |
| US20060291205A1 (en) * | 2005-06-24 | 2006-12-28 | Lg Philips Lcd Co., Ltd. | Backlight assembly including light emitting diode and display device including the same |
| US20070269915A1 (en) * | 2006-05-16 | 2007-11-22 | Ak Wing Leong | LED devices incorporating moisture-resistant seals and having ceramic substrates |
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2009
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060163596A1 (en) * | 2005-01-26 | 2006-07-27 | Gi-Cherl Kim | Two dimensional light source using light emitting diode and liquid crystal display device using the two dimensional light source |
| US20060291205A1 (en) * | 2005-06-24 | 2006-12-28 | Lg Philips Lcd Co., Ltd. | Backlight assembly including light emitting diode and display device including the same |
| US20070269915A1 (en) * | 2006-05-16 | 2007-11-22 | Ak Wing Leong | LED devices incorporating moisture-resistant seals and having ceramic substrates |
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| TW201036201A (en) | 2010-10-01 |
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