TWI494466B - Plasma film forming apparatus, crystal solar cell and semiconductor element - Google Patents
Plasma film forming apparatus, crystal solar cell and semiconductor element Download PDFInfo
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- H—ELECTRICITY
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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Description
本發明是有關於一種電漿(plasma)成膜裝置，該電漿成膜裝置形成電漿來成膜。The present invention relates to a plasma film forming apparatus which forms a plasma to form a film.
在半導體器件(device)的製造步驟中，由於容易高精度地對製程(process)進行控制的優點，所以在成膜步驟中使用電漿成膜裝置。例如，作為電漿成膜裝置，已知有電漿化學氣相沈積(Chemical Vapor Deposition，CVD)裝置。In the manufacturing step of a semiconductor device, a plasma film forming apparatus is used in the film forming step because of the advantage of easily controlling the process with high precision. For example, as a plasma film forming apparatus, a plasma Vapor Deposition (CVD) apparatus is known.
於電漿CVD裝置中，藉由高頻電力等來使原料氣體進行電漿化，接著，藉由化學反應而於基板上形成薄膜。已提出了如下的電漿CVD裝置，該電漿CVD裝置準備了多個電極板，將基板配置於各個電極板，藉此來使處理能力提高(例如參照專利文獻1)。In the plasma CVD apparatus, the material gas is plasma-formed by high-frequency power or the like, and then a thin film is formed on the substrate by a chemical reaction. A plasma CVD apparatus has been proposed which has a plurality of electrode plates prepared and arranges the substrates on the respective electrode plates, thereby improving the processing capability (see, for example, Patent Document 1).
先前技術文獻Prior technical literature
專利文獻Patent literature
專利文獻1：國際專利公開第02/20871號小冊子Patent Document 1: International Patent Publication No. 02/20871
為了均勻地、且以高成膜效率，於腔室(chamber)內的全部的基板上形成膜，採用如下的方法：使用自電極內部供給製程氣體的簇射電極(shower electrode)。然而，為了使製程氣體均勻地自簇射電極噴出，必須使製程氣體於電極內部均勻地分散。尤其是，於將基板分別搭載於多個 電極的情形時，為了使上述製程氣體均勻地分散，必須將簇射電極設為大型的簇射電極。結果是，存在使電漿成膜裝置大型化的問題。In order to form a film on all the substrates in a chamber uniformly and with high film forming efficiency, a method is employed in which a shower electrode for supplying a process gas from inside the electrode is used. However, in order to uniformly eject the process gas from the shower electrode, it is necessary to uniformly disperse the process gas inside the electrode. In particular, the substrate is mounted on a plurality of substrates In the case of an electrode, in order to uniformly disperse the above process gas, it is necessary to use a shower electrode as a large-sized shower electrode. As a result, there is a problem that the plasma film forming apparatus is increased in size.
有鑑於上述問題點，本發明的目的在於：提供如下的電漿成膜裝置，該電漿成膜裝置能夠效率良好地於基板上形成均勻的膜，且抑制了大型化。In view of the above problems, an object of the present invention is to provide a plasma film forming apparatus capable of efficiently forming a uniform film on a substrate and suppressing an increase in size.
根據本發明的一個形態，提供如下的電漿成膜裝置，該電漿成膜裝置包括：腔室，搬入有基板固定器，基板固定器具有搭載面，該搭載面搭載著基板；陰極電極，以與搭載面相對向的方式而配置，上述搭載面於腔室內、在上下方向延伸地配置；氣體供給裝置，將製程氣體導入至腔室內的基板固定器與陰極電極之間；以及交流電源，將交流電力供給至基板固定器與陰極電極之間，使製程氣體於基板固定器與陰極電極之間達到電漿狀態，將以製程氣體中所含的原料作為主成分的薄膜形成於基板上。According to an aspect of the present invention, there is provided a plasma film forming apparatus including: a chamber into which a substrate holder is carried, a substrate holder having a mounting surface, a mounting surface on which the substrate is mounted, and a cathode electrode; Arranged so as to face the mounting surface, the mounting surface is arranged to extend in the vertical direction in the chamber; the gas supply device introduces the process gas between the substrate holder and the cathode electrode in the chamber; and an AC power source. The alternating current power is supplied between the substrate holder and the cathode electrode, and the process gas is brought into a plasma state between the substrate holder and the cathode electrode, and a film containing a raw material contained in the process gas as a main component is formed on the substrate.
根據本發明的一個形態，提供如下的電漿成膜裝置，該電漿成膜裝置於基板上形成薄膜，且包括：腔室，容納基板；基板載板，配置於腔室內，且載置著基板；高頻電極，配置於腔室內，且與基板載板上的基板相對向；氣體供給機構，將包含氫的預處理氣體、或包含形成於基板上的薄膜的原料氣體的反應氣體的任一種，供給至腔室內；以及交流電源，將交流電力供給至基板載板與高頻電極之 間，於成膜步驟的不同階段，分別於基板的上表面激發：包含預處理氣體的電漿、或包含原料氣體的電漿的任一種。According to an aspect of the present invention, there is provided a plasma film forming apparatus which forms a film on a substrate, and includes: a chamber accommodating the substrate; a substrate carrier plate disposed in the chamber and mounted thereon a substrate; a high-frequency electrode disposed in the chamber and facing the substrate on the substrate carrier; and a gas supply mechanism for using a pretreatment gas containing hydrogen or a reaction gas of a material gas including a thin film formed on the substrate a supply to the chamber; and an alternating current source for supplying alternating current power to the substrate carrier and the high frequency electrode At the different stages of the film forming step, respectively, the plasma is contained on the upper surface of the substrate: either a plasma containing a pretreatment gas or a plasma containing a material gas.
根據本發明，可提供如下的電漿成膜裝置，該電漿成膜裝置能夠效率良好地於基板上形成均勻的膜，且抑制了大型化。According to the present invention, it is possible to provide a plasma film forming apparatus capable of efficiently forming a uniform film on a substrate and suppressing an increase in size.
接著，參照圖式，來對本發明的實施形態進行說明。於以下的圖式的記載中，對相同或類似的部分附上相同或類似的符號。然而，應當留意，圖式為模式性的圖示。又，以下所示的實施形態是：對用以將本發明的技術思想予以具體化的裝置或方法進行例示，並不將本發明的實施形態的構成零件的構造、配置等特定為下述的構造、配置等。本發明的實施形態可於申請專利範圍內，添加各種變更。Next, an embodiment of the present invention will be described with reference to the drawings. In the description of the following drawings, the same or similar symbols are attached to the same or similar parts. However, it should be noted that the schema is a graphical representation. In the following embodiments, the apparatus or method for embodying the technical idea of the present invention is exemplified, and the structure, arrangement, and the like of the components of the embodiment of the present invention are not specified as follows. Construction, configuration, etc. The embodiments of the present invention can be variously modified within the scope of the patent application.
如圖1所示，本發明的實施形態的電漿成膜裝置10包括：腔室20，搬入有基板固定器11(substrate holder)，該基板固定器11具有搭載面110，該搭載面110搭載著基板1；陰極電極12，配置於腔室20內；氣體供給裝置13，將製程氣體100導入至腔室20內的基板固定器11與陰極電極12之間；以及交流電源14，將交流電力供給至基板固定器11與陰極電極12之間，使製程氣體100於基板固定器11與陰極電極12之間達到電漿狀態。陰極電極12 是以與搭載面110相對向的方式而配置，該搭載面110於腔室20內、朝著上下方向延伸地配置。根據電漿成膜裝置10，將以製程氣體100中所含的原料作為主成分的薄膜形成於基板1上。As shown in Fig. 1, a plasma film forming apparatus 10 according to an embodiment of the present invention includes a chamber 20 into which a substrate holder 11 having a mounting surface 110 and a mounting surface 110 mounted thereon a substrate 1; a cathode electrode 12 disposed in the chamber 20; a gas supply device 13 for introducing the process gas 100 into the substrate holder 11 and the cathode electrode 12 in the chamber 20; and an AC power source 14 for alternating current power The process gas 100 is supplied between the substrate holder 11 and the cathode electrode 12 to bring the process gas 100 into a plasma state between the substrate holder 11 and the cathode electrode 12. Cathode electrode 12 The mounting surface 110 is disposed to face the mounting surface 110 so as to extend in the vertical direction in the chamber 20 . According to the plasma film forming apparatus 10, a film containing a raw material contained in the process gas 100 as a main component is formed on the substrate 1.
於電漿成膜裝置10中，使用基板固定器11作為陽極(anode)電極。於圖1所示的例子中，基板固定器11為接地。In the plasma film forming apparatus 10, the substrate holder 11 is used as an anode electrode. In the example shown in FIG. 1, the substrate holder 11 is grounded.
基板固定器11例如能夠採用如下的構造，即：與搭載面110垂直的剖面呈梳形形狀(comb shaped)。亦即，能夠採用如圖2所示的基板固定器11，該基板固定器11包括：多個基板安裝板111，分別將搭載面110定義為主面，且彼此隔開且平行地配置；以及固定板112，對基板安裝板111各自的底部進行固定。於圖2中，表示了基板安裝板111為5塊的例子，但基板安裝板111的塊數並不限於5塊。The substrate holder 11 can have, for example, a configuration in which a cross section perpendicular to the mounting surface 110 has a comb shape. That is, the substrate holder 11 shown in FIG. 2 can be employed, and the substrate holder 11 includes a plurality of substrate mounting plates 111 that define the mounting surface 110 as a main surface and are spaced apart from each other and arranged in parallel; The fixing plate 112 fixes the bottom of each of the substrate mounting plates 111. In FIG. 2, an example in which the substrate mounting plate 111 is five blocks is shown, but the number of the substrate mounting plates 111 is not limited to five.
此時，如圖1所示，多個基板安裝板111是：以與多個陰極電極12交替、且使最外側為基板安裝板111的方式而排列。將搭載面110分別定義為：基板安裝板111的與陰極電極12相對向的面。At this time, as shown in FIG. 1 , the plurality of substrate mounting plates 111 are arranged so as to alternate with the plurality of cathode electrodes 12 and to have the outermost side of the substrate mounting plate 111 . The mounting surface 110 is defined as a surface of the substrate mounting plate 111 facing the cathode electrode 12, respectively.
於電漿成膜裝置10中，搭載有基板1的狀態下的基板固定器11被搬入至腔室20。然後，包含成膜用的原料氣體的製程氣體100自氣體供給裝置13導入至腔室20內。In the plasma film forming apparatus 10, the substrate holder 11 in a state in which the substrate 1 is mounted is carried into the chamber 20. Then, the process gas 100 including the material gas for film formation is introduced into the chamber 20 from the gas supply device 13.
將製程氣體100予以導入之後，藉由排氣裝置15來對腔室20內的壓力進行調整。將腔室20內的製程氣體100 的壓力調整為規定的氣體壓力之後，藉由交流電源14來將規定的交流電力供給至陰極電極12與基板固定器11之間。藉此，使腔室20內的製程氣體100電漿化。使基板1曝露於所形成的電漿，藉此，以原料氣體中所含的原料作為主成分的所期望的薄膜形成於基板1的露出的表面。再者，亦可藉由圖示已省略的基板加熱器，來對成膜處理中的基板1的溫度進行設定。將成膜處理中的基板1的溫度設定為規定的溫度，藉此，可使成膜速度加快，或可使膜的品質提高。After the process gas 100 is introduced, the pressure in the chamber 20 is adjusted by the exhaust device 15. Process gas 100 within chamber 20 After the pressure is adjusted to a predetermined gas pressure, predetermined AC power is supplied to the cathode electrode 12 and the substrate holder 11 by the AC power source 14. Thereby, the process gas 100 in the chamber 20 is plasmad. The substrate 1 is exposed to the formed plasma, whereby a desired film containing a raw material contained in the material gas as a main component is formed on the exposed surface of the substrate 1. Furthermore, the temperature of the substrate 1 in the film formation process can also be set by the substrate heater which has been omitted. By setting the temperature of the substrate 1 in the film formation process to a predetermined temperature, the film formation speed can be increased or the quality of the film can be improved.
於電漿成膜裝置10中，可藉由適當地選擇原料氣體來形成所期望的薄膜。例如，可於基板1上形成：矽半導體薄膜、氮化矽薄膜、氧化矽薄膜、氮氧化矽薄膜、以及碳薄膜等。具體而言，使用氨(NH3 )氣與矽烷(SiH4 )氣體的混合氣體，於基板1上形成氮化矽(SiN)膜。或者，使用矽烷(SiH4 )氣體與一氧化二氮(N2 O)氣體的混合氣體，於基板1上形成氧化矽(SiOx)膜。In the plasma film forming apparatus 10, a desired film can be formed by appropriately selecting a material gas. For example, a germanium semiconductor film, a tantalum nitride film, a hafnium oxide film, a hafnium oxynitride film, a carbon thin film, or the like can be formed on the substrate 1. Specifically, a tantalum nitride (SiN) film is formed on the substrate 1 by using a mixed gas of ammonia (NH 3 ) gas and decane (SiH 4 ) gas. Alternatively, a cerium oxide (SiOx) film is formed on the substrate 1 by using a mixed gas of decane (SiH 4 ) gas and nitrous oxide (N 2 O) gas.
例如，較佳為如圖3所示，於陰極電極12中形成有貫通孔120，該貫通孔120在厚度方向上、將陰極電極12予以貫通。貫通孔120的開口部是：以與基板安裝板111的搭載面110相對向的方式，而形成於陰極電極12的表面。圖3中例示了如下的情形，即，基板固定器11的基板安裝板111為3塊，且陰極電極12為2塊。For example, as shown in FIG. 3, a through hole 120 is formed in the cathode electrode 12, and the through hole 120 penetrates the cathode electrode 12 in the thickness direction. The opening of the through hole 120 is formed on the surface of the cathode electrode 12 so as to face the mounting surface 110 of the substrate mounting plate 111. FIG. 3 exemplifies a case where the substrate mounting plate 111 of the substrate holder 11 is three pieces and the cathode electrode 12 is two pieces.
於表面設置有開口部的陰極電極12是作為空心陰極電極(hollow cathode electrode)而發揮功能，該空心陰極 電極產生空心陰極放電。於空心陰極放電過程中，將電子封閉於無電場的陰極電極12的內部，藉此，形成高密度電子的空間，上述電子是因離子(ion)射入至陰極電極12的表面而自陰極電極12發射出的電子。侵入至高電子密度區域的氣體分子反覆地進行游離與再結合，且於再結合時，被觀測為發出高亮度的光。高密度電漿中所產生的前驅物為自由基物種(radical species)，無論電極電位如何，該前驅物均會朝貫通孔120的外側擴散，且於基板安裝板111的搭載面110所配置的基板1的表面形成薄膜。The cathode electrode 12 provided with an opening on the surface functions as a hollow cathode electrode which is a hollow cathode electrode The electrode produces a hollow cathode discharge. During the hollow cathode discharge process, electrons are enclosed inside the cathode electrode 12 having no electric field, thereby forming a space of high-density electrons which are incident on the surface of the cathode electrode 12 due to ions (ion) from the cathode electrode. 12 emitted electrons. Gas molecules that invade into the high electron density region repeatedly recombine and recombine, and when recombined, are observed to emit high-intensity light. The precursor generated in the high-density plasma is a radical species, and the precursor diffuses toward the outside of the through hole 120 regardless of the electrode potential, and is disposed on the mounting surface 110 of the substrate mounting plate 111. A film is formed on the surface of the substrate 1.
另一方面，於圖4所示的陰極電極12A中，製程氣體100均勻地自凹部401放出，該凹部藉由空心陰極放電來產生高密度電漿，上述圖4所示的陰極電極12A採用自內部供給製程氣體100的簇射電極構造，且於表面形成有凹部401。藉此，可於陰極電極12A的整個面上獲得電漿的均勻性。On the other hand, in the cathode electrode 12A shown in FIG. 4, the process gas 100 is uniformly discharged from the concave portion 401, which generates a high-density plasma by hollow cathode discharge, and the cathode electrode 12A shown in FIG. The shower electrode structure of the process gas 100 is internally supplied, and a concave portion 401 is formed on the surface. Thereby, the uniformity of the plasma can be obtained on the entire surface of the cathode electrode 12A.
然而，對於圖4所示的陰極電極12A而言，難以均勻地將製程氣體100供給至多個凹部401，且氣體噴出口402的開口直徑或長度、製程氣體100的流量或壓力等，存在各種限制。而且，由於氣體噴出口402的直徑為0.3mm~0.4mm左右的極微小的直徑，因此，容易引起堵塞。當因堵塞而無法將製程氣體100予以導入時，於已堵塞的凹部401中不會產生空心陰極放電，因此，無法維持陰極電極12A的整個面上的放電的均勻性。However, with the cathode electrode 12A shown in FIG. 4, it is difficult to uniformly supply the process gas 100 to the plurality of concave portions 401, and the opening diameter or length of the gas ejection port 402, the flow rate or pressure of the process gas 100, and the like have various limitations. . Further, since the diameter of the gas discharge port 402 is an extremely small diameter of about 0.3 mm to 0.4 mm, clogging is likely to occur. When the process gas 100 cannot be introduced due to clogging, the hollow cathode discharge does not occur in the clogging recess 401. Therefore, the uniformity of discharge on the entire surface of the cathode electrode 12A cannot be maintained.
相對於此，對於圖3所示的陰極電極12而言，不經由 陰極電極12而將製程氣體100予以導入。貫通孔120的直徑充分地大於簇射電極所需的孔的直徑，因此，無需擔心堵塞，而且，維護(maintenance)亦容易。貫通孔120的直徑為3.8mm~8.0mm左右，例如為5mm。On the other hand, the cathode electrode 12 shown in FIG. 3 does not pass through. The process gas 100 is introduced into the cathode electrode 12. The diameter of the through hole 120 is sufficiently larger than the diameter of the hole required for the shower electrode, and therefore, there is no need to worry about clogging, and maintenance is also easy. The diameter of the through hole 120 is about 3.8 mm to 8.0 mm, for example, 5 mm.
又，於圖3所示的陰極電極12的兩個面上分別激發的電漿是：藉由貫通孔120而連結。因此，陰極電極12的兩個面上的電漿濃度的濃淡之差自然地被修正，可於陰極電極12的兩個面產生密度均勻的電漿空間。Further, the plasma excited on both surfaces of the cathode electrode 12 shown in FIG. 3 is connected by the through holes 120. Therefore, the difference in the density of the plasma concentrations on both faces of the cathode electrode 12 is naturally corrected, and a plasma space having a uniform density can be produced on both faces of the cathode electrode 12.
如上所述，採用在陰極電極12中形成多個貫通孔120的多空心陰極(multi hollow cathode)構造，藉此，可於陰極電極12的兩個面獲得均勻的多空心放電(multi hollow discharge)。所謂「多空心放電」是指：分別產生於各貫通孔120中的空心陰極放電合併之後，於陰極電極12的表面產生的放電。藉此，可於陰極電極12的表面實現均勻的高密度電漿。結果是，效率良好地將原料氣體分解，從而高速、大面積且均勻地於基板1上形成薄膜。As described above, a multi-hollow cathode structure in which a plurality of through holes 120 are formed in the cathode electrode 12 is employed, whereby a uniform multi-hollow discharge can be obtained on both faces of the cathode electrode 12. . The "multiple hollow discharge" means a discharge generated on the surface of the cathode electrode 12 after the hollow cathodes respectively generated in the respective through holes 120 are combined. Thereby, a uniform high-density plasma can be realized on the surface of the cathode electrode 12. As a result, the material gas is efficiently decomposed, and a thin film is formed on the substrate 1 at a high speed, a large area, and uniformly.
貫通孔120較佳為：緻密地配置於陰極電極12的表面。以儘可能高的密度來配置貫通孔120，藉此，可容易於陰極電極12的兩個面形成均勻的高電子密度電場。圖5中表示形成有貫通孔120的開口部的陰極電極12的表面的例子。The through hole 120 is preferably densely disposed on the surface of the cathode electrode 12. The through holes 120 are disposed at the highest possible density, whereby a uniform high electron density electric field can be easily formed on both faces of the cathode electrode 12. FIG. 5 shows an example of the surface of the cathode electrode 12 in which the opening of the through hole 120 is formed.
再者，陰極電極12的貫通孔120的內表面較佳為採用二次電子發射率良好的材料，且進行表面處理。例如，廉價、易於加工且易於進行清洗等維護的碳材料等，適合於 作為陰極電極12的材料。例如，可藉由氫氟酸處理，來對碳材料的陰極電極12進行清洗。又，藉由使用碳材料，不會因電漿處理步驟中的高溫而產生變形。或者，容易形成金屬氧化膜的鋁合金等，亦為適合於空心陰極電極的材料。此外，可將含碳纖維的碳、不鏽鋼合金、銅、銅合金、玻璃、以及陶瓷等使用於陰極電極12。或者，亦可利用耐酸鋁(alumite)處理、鍍敷、以及熔噴(thermal spraying)，來對上述材料實施塗佈(coating)。Further, it is preferable that the inner surface of the through hole 120 of the cathode electrode 12 is made of a material having a good secondary electron emissivity and subjected to surface treatment. For example, a carbon material that is inexpensive, easy to process, and easy to perform maintenance such as cleaning is suitable for As the material of the cathode electrode 12. For example, the cathode electrode 12 of the carbon material can be cleaned by hydrofluoric acid treatment. Moreover, by using a carbon material, deformation does not occur due to the high temperature in the plasma processing step. Alternatively, an aluminum alloy or the like which easily forms a metal oxide film is also a material suitable for a hollow cathode electrode. Further, carbon containing carbon fibers, a stainless steel alloy, copper, a copper alloy, glass, ceramics, or the like can be used for the cathode electrode 12. Alternatively, the above materials may be coated by alumite treatment, plating, and thermal spraying.
對於用作陽極電極的基板固定器11而言，亦可適當地使用碳材料。又，可將含碳纖維的碳、鋁合金、不鏽鋼合金、銅、銅合金、玻璃、以及陶瓷等使用於基板固定器11。或者，亦可利用耐酸鋁處理、鍍敷、以及熔噴，來對上述材料實施塗佈。For the substrate holder 11 used as the anode electrode, a carbon material can also be suitably used. Further, carbon, carbon-containing carbon, stainless steel alloy, copper, copper alloy, glass, ceramics, or the like can be used for the substrate holder 11. Alternatively, the above materials may be applied by alumite treatment, plating, and melt blowing.
較佳為於腔室20內，將製程氣體100自下方朝向上方、而導入至基板固定器11與陰極電極12之間。藉由自下方將製程氣體100予以導入，比重輕的已電漿化的氣體分子、自由基粒子作為上方流，而於陰極電極12的表面自然地朝上流動。因此，即便不使用如簇射電極般的複雜的構造，亦會均勻地將製程氣體供給至陰極電極12的表面。Preferably, in the chamber 20, the process gas 100 is introduced from the lower side toward the upper side and introduced between the substrate holder 11 and the cathode electrode 12. By introducing the process gas 100 from below, the plasma gas molecules and radical particles having a small specific gravity flow upward as they are, and naturally flow upward on the surface of the cathode electrode 12. Therefore, even if a complicated structure such as a shower electrode is not used, the process gas is uniformly supplied to the surface of the cathode electrode 12.
再者，陰極電極12的表面較佳為：平坦至由加工符號(finish mark)「▽▽▽」所表示的程度，以使製程氣體100順暢地流動。亦即，較佳為最大高度Ry小於6.3 S，十點平均粗糙度Rz小於6.3 Z，算術平均粗糙度Ra小於1.6 a。使陰極電極12的表面粗糙度減小，藉此，可以提高形成於 基板1的薄膜的成長速度。Further, the surface of the cathode electrode 12 is preferably flat to the extent indicated by a finish mark "▽▽▽" to allow the process gas 100 to smoothly flow. That is, it is preferable that the maximum height Ry is less than 6.3 S, the ten-point average roughness Rz is less than 6.3 Z, and the arithmetic mean roughness Ra is less than 1.6 a. The surface roughness of the cathode electrode 12 is reduced, whereby the formation can be improved The growth rate of the film of the substrate 1.
同樣地，基板固定器11的表面亦較佳為：平坦至由加工符號「▽▽」所表示的程度。亦即，較佳為最大高度Ry小於25 S，十點平均粗糙度Rz小於25 Z，算術平均粗糙度Ra小於6.3 a。Similarly, the surface of the substrate holder 11 is also preferably flat to the extent indicated by the processing symbol "▽▽". That is, it is preferable that the maximum height Ry is less than 25 S, the ten-point average roughness Rz is less than 25 Z, and the arithmetic mean roughness Ra is less than 6.3 a.
為了將製程氣體100自下方朝上方予以導入，如圖6所示，氣體供給噴嘴(nozzle)130沿著陰極電極12的底面而配置於陰極電極12的正下方，該氣體供給噴嘴130使氣體供給裝置13的製程氣體100噴出。使製程氣體100自氣體供給噴嘴130朝陰極電極12的底部噴出，藉此，可大致均等地將製程氣體100供給至陰極電極12的兩個面。In order to introduce the process gas 100 upward from the bottom, as shown in FIG. 6, a gas supply nozzle (notch) 130 is disposed directly below the cathode electrode 12 along the bottom surface of the cathode electrode 12, and the gas supply nozzle 130 supplies gas. The process gas 100 of the apparatus 13 is ejected. The process gas 100 is ejected from the gas supply nozzle 130 toward the bottom of the cathode electrode 12, whereby the process gas 100 can be supplied to the both surfaces of the cathode electrode 12 substantially uniformly.
此時，當如圖2所示，基板固定器11為包括固定板112的形狀時，如圖6所示，氣體導入孔113位於基板安裝板111之間、且形成於固定板112，該氣體導入孔113在上下方向將固定板112予以貫通。製程氣體100經由氣體導入孔113，而自腔室20的下方導入至基板安裝板111與陰極電極12之間。再者，如圖6所示，當於腔室20內，藉由支持台30來支持著基板固定器11時，於支持台30的與氣體導入孔113相對應的位置形成導入孔31，該導入孔31在上下方向將支持台30予以貫通。At this time, when the substrate holder 11 is in the shape including the fixing plate 112 as shown in FIG. 2, as shown in FIG. 6, the gas introduction hole 113 is located between the substrate mounting plates 111 and is formed on the fixing plate 112, the gas. The introduction hole 113 penetrates the fixing plate 112 in the vertical direction. The process gas 100 is introduced between the substrate mounting plate 111 and the cathode electrode 12 from below the chamber 20 via the gas introduction hole 113. Further, as shown in FIG. 6, when the substrate holder 11 is supported by the support table 30 in the chamber 20, the introduction hole 31 is formed at a position of the support table 30 corresponding to the gas introduction hole 113. The introduction hole 31 penetrates the support base 30 in the vertical direction.
當存在多個氣體供給噴嘴130時，如圖7所示，氣體供給噴嘴130沿著陰極電極12的底面排列。如透過陰極電極12而對基板安裝板111進行圖示的圖8所示，將搭載面110分別定義為：基板安裝板111的與陰極電極12相對向 的面。藉此，基板1與陰極電極12相對向地配置。When a plurality of gas supply nozzles 130 are present, as shown in FIG. 7, the gas supply nozzles 130 are arranged along the bottom surface of the cathode electrode 12. As shown in FIG. 8 in which the substrate mounting plate 111 is shown through the cathode electrode 12, the mounting surface 110 is defined as the substrate mounting plate 111 facing the cathode electrode 12, respectively. Face. Thereby, the substrate 1 and the cathode electrode 12 are arranged to face each other.
將氣體供給噴嘴130的噴出口的形狀例子，表示於圖9(a)~圖9(c)。圖9(a)為如下的例子，即：沿著直徑而於圓筒形狀的氣體供給噴嘴130的前端形成槽，且將噴出口配置於槽的中心部分。圖9(b)為如下的例子，即：於圓筒形狀的氣體供給噴嘴130的前端設置凹部，且將噴出口配置於凹部的底面的中心部分。圖9(c)為如下的例子，即：將噴出口配置於圓筒形狀的氣體供給噴嘴130的前端的中心部分。An example of the shape of the discharge port of the gas supply nozzle 130 is shown in Figs. 9(a) to 9(c). Fig. 9 (a) is an example in which a groove is formed at the tip end of the cylindrical gas supply nozzle 130 along the diameter, and the discharge port is disposed at the center portion of the groove. (b) of FIG. 9 is an example in which a concave portion is provided at the tip end of the cylindrical gas supply nozzle 130, and the discharge port is disposed at a central portion of the bottom surface of the concave portion. (c) of FIG. 9 is an example in which the discharge port is disposed at a central portion of the front end of the cylindrical gas supply nozzle 130.
當製程氣體100為對多種氣體進行混合而成的氣體時，可自氣體供給噴嘴130供給對全部的氣體進行混合而成的製程氣體100，亦可針對每種氣體，自不同的氣體供給噴嘴130而分別供給氣體。When the process gas 100 is a gas obtained by mixing a plurality of gases, the process gas 100 obtained by mixing all of the gases may be supplied from the gas supply nozzle 130, and the nozzles 130 may be supplied from different gases for each gas. The gas is supplied separately.
將排氣裝置15的構成例子表示於圖10。圖10所示的排氣裝置15配置於圖示已省略的腔室20的上部。排氣裝置15包括：第1排氣調整板151，配置於基板固定器11及陰極電極12的上方；以及框形狀的第2排氣調整板152，以位於第1排氣調整板151的外緣部的下方的方式而配置。如圖10所示，流入至基板固定器11及陰極電極12的上方的製程氣體100是：通過第1排氣調整板151與第2排氣調整板152的間隙，而自第1排氣調整板151的外緣部排出至腔室20的外部。排氣裝置15藉由對第1排氣調整板151與第2排氣調整板152的間隙的大小進行控制，來調整排氣量。An example of the configuration of the exhaust device 15 is shown in Fig. 10 . The exhaust device 15 shown in Fig. 10 is disposed at an upper portion of the chamber 20 which has been omitted. The exhaust device 15 includes a first exhaust gas adjustment plate 151 disposed above the substrate holder 11 and the cathode electrode 12, and a frame-shaped second exhaust gas adjustment plate 152 positioned outside the first exhaust gas adjustment plate 151. It is arranged in the way below the edge. As shown in FIG. 10, the process gas 100 that has flowed into the upper side of the substrate holder 11 and the cathode electrode 12 is adjusted from the first exhaust gas by the gap between the first exhaust gas adjustment plate 151 and the second exhaust gas adjustment plate 152. The outer edge portion of the plate 151 is discharged to the outside of the chamber 20. The exhaust device 15 controls the amount of the exhaust gas by controlling the size of the gap between the first exhaust gas adjustment plate 151 and the second exhaust gas adjustment plate 152.
圖11中表示排氣裝置15的其他構成例子。圖11所示的排氣裝置15包括：多個排氣孔150，上述多個排氣孔150配置於圖示已省略的腔室20的上部，且在上下方向進行貫通。製程氣體100經由排氣孔150而朝腔室20的外部排氣。排氣裝置15藉由對排氣孔150的開口度進行控制，來調整排氣量。Another configuration example of the exhaust device 15 is shown in Fig. 11 . The exhaust device 15 shown in FIG. 11 includes a plurality of exhaust holes 150 that are disposed at an upper portion of the chamber 20 that has been omitted, and that penetrate in the vertical direction. The process gas 100 is exhausted toward the outside of the chamber 20 via the exhaust hole 150. The exhaust device 15 adjusts the amount of exhaust gas by controlling the opening degree of the exhaust hole 150.
根據本發明的實施形態的電漿成膜裝置10，將基板固定器11用作陽極電極，藉此，可使基板1的成膜面垂直、而將基板1配置於腔室20內。因此，多個陰極電極12配置於腔室20內。因此，圖1所示的電漿成膜裝置10與如下的電漿成膜裝置相比較，能夠將大量的基板1同時收納於腔室20內，可使處理能力顯著地提高，上述電漿成膜裝置是：將使成膜面朝向上下方向的基板1搭載於平板的基板載板等，從而進行成膜處理。According to the plasma film forming apparatus 10 of the embodiment of the present invention, the substrate holder 11 is used as an anode electrode, whereby the substrate 1 can be placed in the chamber 20 while the film formation surface of the substrate 1 is perpendicular. Therefore, the plurality of cathode electrodes 12 are disposed in the chamber 20. Therefore, the plasma film forming apparatus 10 shown in FIG. 1 can store a large number of substrates 1 in the chamber 20 at the same time as compared with the plasma film forming apparatus described below, and the processing ability can be remarkably improved. In the membrane device, the substrate 1 having the film formation surface facing the vertical direction is mounted on a substrate carrier or the like of the flat plate, and a film formation process is performed.
而且，藉由採用形成有貫通孔120的陰極電極12，可於陰極電極12的兩個面，穩定地產生均勻且高密度的電漿。此時，無論交流電源14所供給的交流電力的頻率如何，均能夠大面積地產生均勻的高密度電漿。即便將交流電源14所供給的交流電力的頻率設定為例如60Hz~27MHz左右，亦可產生均勻且高密度的電漿。亦即，無需使用昂貴的交流電源，該交流電源供給特高頻(Very High Frequency，VHF)頻帶的交流電力。對於電漿成膜裝置10而言，例如即便於如250KHz般的低頻的射頻(Radio Frequency，RF)頻帶下，亦可獲得與先前的電漿成膜裝置 同等或以上的高密度電漿，上述先前的電漿成膜裝置使用VHF頻帶的交流電源。Further, by using the cathode electrode 12 in which the through hole 120 is formed, uniform and high-density plasma can be stably generated on both surfaces of the cathode electrode 12. At this time, regardless of the frequency of the AC power supplied from the AC power source 14, uniform high-density plasma can be generated over a large area. Even if the frequency of the AC power supplied from the AC power source 14 is set to, for example, about 60 Hz to 27 MHz, a uniform and high-density plasma can be generated. That is, it is not necessary to use an expensive AC power source that supplies AC power in a Very High Frequency (VHF) band. For the plasma film forming apparatus 10, for example, even in a low frequency radio frequency (RF) band such as 250 kHz, a plasma forming apparatus can be obtained from the prior art. For the high-density plasma of the same or higher, the above-mentioned plasma plasma film forming apparatus uses an AC power source of a VHF band.
結果是，可高速且均勻地於基板1上形成大面積的薄膜。亦即，根據電漿成膜裝置10，形成的膜的膜厚、膜品質的均勻性提高，並且提高成膜速度。As a result, a large-area film can be formed on the substrate 1 at a high speed and uniformly. That is, according to the plasma film forming apparatus 10, the film thickness of the formed film and the uniformity of the film quality are improved, and the film forming speed is increased.
又，電漿成膜裝置10無需使用構造複雜、且必須形成微細孔的簇射電極。因此，無需如簇射電極般的頻繁的維護。而且，簇射電極必須大型化，以使製程氣體100均勻地分散，相對於此，電漿成膜裝置10無需大型化。因此，根據電漿成膜裝置10，可提供：能夠效率良好地於腔室20內的全部的基板上形成均勻的膜，且抑制了大型化的電漿成膜裝置。Further, the plasma film forming apparatus 10 does not need to use a shower electrode having a complicated structure and having to form fine pores. Therefore, frequent maintenance like a shower electrode is not required. Further, the shower electrode must be enlarged to uniformly disperse the process gas 100, whereas the plasma film forming apparatus 10 does not need to be enlarged. Therefore, according to the plasma film forming apparatus 10, it is possible to provide a plasma film forming apparatus capable of efficiently forming a uniform film on all the substrates in the chamber 20 and suppressing an increase in size.
而且，與使用如下的簇射電極的電漿成膜裝置相比較，電漿成膜裝置10的製造期間短，且製造良率提高，上述簇射電極必須加工出數千個以上的微細孔。因此，電漿成膜裝置10的製造成本受到抑制。Further, compared with the plasma film forming apparatus using the shower electrode as follows, the manufacturing period of the plasma film forming apparatus 10 is short, and the manufacturing yield is improved, and the shower electrode must process thousands or more of fine pores. Therefore, the manufacturing cost of the plasma film forming apparatus 10 is suppressed.
圖12中表示如下的例子，即：將交流電源14所輸出的交流電力，經由脈衝產生器(pulse generator)16而供給至基板固定器11與陰極電極12之間。於圖12所示的例子中，脈衝產生器16的輸出供給至陰極電極12，基板固定器11為接地。以固定的週期停止供給交流電力，藉此，於腔室20內穩定地形成電漿。原因在於：於交流電力的供給過程中設置停止期間，藉此，電子的溫度會下降，放電的穩定性提高。然而，若將斷開(off)時間設定得過長，則 功率(power)效率會下降，因此需要注意。FIG. 12 shows an example in which the AC power output from the AC power source 14 is supplied between the substrate holder 11 and the cathode electrode 12 via a pulse generator 16. In the example shown in Fig. 12, the output of the pulse generator 16 is supplied to the cathode electrode 12, and the substrate holder 11 is grounded. The supply of the alternating current power is stopped at a fixed cycle, whereby the plasma is stably formed in the chamber 20. The reason is that the stop period is set during the supply of the alternating current power, whereby the temperature of the electrons is lowered and the stability of the discharge is improved. However, if the off time is set too long, then Power efficiency will drop, so you need to be careful.
例如，將供給交流電力的導通(on)時間設為600微秒，將停止供給交流電力的斷開時間設為50微秒，以使導通時間與斷開時間交替地反覆出現的方式，將交流電力供給至基板固定器11與陰極電極12之間。再者，較佳為將導通時間設定於100微秒~1000微秒左右的範圍內，將斷開時間設定於10微秒~100微秒左右的範圍內。For example, the ON time for supplying AC power is 600 microseconds, and the off time for stopping the supply of AC power is 50 microseconds, so that the on time and the off time alternately appear alternately, and the communication is performed. Power is supplied between the substrate holder 11 and the cathode electrode 12. Further, it is preferable to set the on-time to a range of about 100 microseconds to 1000 microseconds, and to set the off-time to a range of about 10 microseconds to 100 microseconds.
以上述方式，對朝向基板固定器11與陰極電極12之間的交流電力的供給進行脈衝控制，使交流電力的供給週期性地導通、斷開，藉此，可抑制異常放電的產生。In the above-described manner, the supply of the alternating current power between the substrate holder 11 and the cathode electrode 12 is pulse-controlled, and the supply of the alternating current power is periodically turned on and off, whereby the occurrence of abnormal discharge can be suppressed.
圖13中表示如下的例子，即：除了安裝於陰極電極12的交流電源14之外，另外將交流電源17安裝於作為陽極電極的基板固定器11。將交流電力供給至陽極電極，藉此，可使形成於基板1的薄膜的膜品質提高。交流電源17所供給的交流電力的頻率是：亦可與交流電源14所供給的交流電力的頻率同等，或低於該交流電源14所供給的交流電力的頻率。例如，將交流電源17所供給的交流電力的頻率設定為60Hz~27MHz左右。FIG. 13 shows an example in which an AC power source 17 is attached to the substrate holder 11 as an anode electrode in addition to the AC power source 14 mounted on the cathode electrode 12. By supplying AC power to the anode electrode, the film quality of the thin film formed on the substrate 1 can be improved. The frequency of the AC power supplied from the AC power source 17 may be equal to or lower than the frequency of the AC power supplied from the AC power source 14 or lower than the AC power supplied from the AC power source 14. For example, the frequency of the AC power supplied from the AC power source 17 is set to about 60 Hz to 27 MHz.
再者，不自交流電源14供給交流電力，而僅自交流電源17供給交流電力，藉此，可對基板1實施電漿清洗(plasma cleaning)。例如，將濺鍍用的氣體導入至腔室20內，一面自交流電源17供給交流電力，一面進行濺鍍蝕刻(sputter etching)，藉此來對基板1進行清洗。Further, the AC power is not supplied from the AC power source 14, but the AC power is supplied from the AC power source 17, whereby the substrate 1 can be subjected to plasma cleaning. For example, the sputtering gas is introduced into the chamber 20, and the substrate 1 is cleaned by sputtering etching while supplying AC power from the AC power source 17.
再者，如圖14所示，可藉由功率分配器(power splitter) 18來對交流電源14的輸出進行分割，將分割所得的交流電力分別供給至陰極電極12與基板固定器11。藉此，與圖13相比較，可使交流電源的數量減少。供給至基板固定器11的電力可小於供給至陰極電極12的電力。例如，將90%~100%的交流電力供給至陰極電極12，將10%~0%的交流電力供給至基板固定器11。Furthermore, as shown in FIG. 14, the power splitter can be used. The output of the AC power source 14 is divided by 18, and the divided AC power is supplied to the cathode electrode 12 and the substrate holder 11, respectively. Thereby, the number of AC power sources can be reduced as compared with FIG. The power supplied to the substrate holder 11 may be smaller than the power supplied to the cathode electrode 12. For example, 90% to 100% of AC power is supplied to the cathode electrode 12, and 10% to 0% of AC power is supplied to the substrate holder 11.
圖1所示的電漿成膜裝置10例如可用作直列(in line)式成膜裝置的成膜室。圖15中表示直列式成膜裝置200的例子，該直列式成膜裝置200包含：放入/加熱室210、成膜室220、以及取出室230的該3個室。The plasma film forming apparatus 10 shown in Fig. 1 can be used, for example, as a film forming chamber of an in-line film forming apparatus. FIG. 15 shows an example of the in-line film forming apparatus 200 including the three chambers of the charging/heating chamber 210, the film forming chamber 220, and the take-out chamber 230.
於直列式成膜裝置200中，搭載有基板1的基板固定器11被放入至放入/加熱室210。於放入/加熱室210中，將基板1預加熱至規定的溫度為止之後，經由開閉式的閘門(gate)240A，將基板固定器11自放入/加熱室210搬送至成膜室220。於成膜室220中，在基板1形成薄膜之後，經由開閉式的閘門240B，將基板固定器11自成膜室220搬送至取出室230。然後，自取出室230將基板固定器11取出。藉由圖示已省略的搬送裝置，於直列式成膜裝置200的各室之間，對基板固定器11進行搬送。In the in-line film forming apparatus 200, the substrate holder 11 on which the substrate 1 is mounted is placed in the insertion/heating chamber 210. After the substrate 1 is preheated to a predetermined temperature in the charging/heating chamber 210, the substrate holder 11 is transferred from the loading/heating chamber 210 to the film forming chamber 220 via the opening and closing type gate 240A. In the film forming chamber 220, after the substrate 1 is formed into a thin film, the substrate holder 11 is transferred from the film forming chamber 220 to the take-out chamber 230 via the opening and closing type shutter 240B. Then, the substrate holder 11 is taken out from the take-out chamber 230. The substrate holder 11 is transported between the respective chambers of the in-line film forming apparatus 200 by a transport device that has been omitted.
再者，如圖16所示，腔室20較佳為圓筒形狀。藉由設為圓筒形狀，腔室20可具有作為真空容器的充分的強度。因此，即便使腔室20的厚度變薄，包括加熱時在內，仍可利用廉價且簡單的構造來實現充分的強度。Further, as shown in Fig. 16, the chamber 20 is preferably cylindrical. By setting it to a cylindrical shape, the chamber 20 can have sufficient strength as a vacuum container. Therefore, even if the thickness of the chamber 20 is made thin, including the heating, sufficient strength can be achieved with an inexpensive and simple structure.
圖17中表示放入/加熱室210的構成例子。放入/加熱 室210包括：加熱器(heater)211A，配置於基板固定器11的上下；以及槽加熱器(slot heater)211B，與基板安裝板111呈平行地配置於基板安裝板111之間。基板固定器11藉由支持台212而於放入/加熱室210內受到支持。再者，於支持台212與槽加熱器211B之間配置有隔熱板213。An example of the configuration of the insertion/heating chamber 210 is shown in FIG. Put in/heat The chamber 210 includes a heater 211A disposed above and below the substrate holder 11 and a slot heater 211B disposed between the substrate mounting plates 111 in parallel with the substrate mounting plate 111. The substrate holder 11 is supported in the insertion/heating chamber 210 by the support table 212. Further, a heat insulating plate 213 is disposed between the support table 212 and the tank heater 211B.
槽加熱器211B對基板固定器11及搭載面110所搭載的基板1進行加熱，藉此，可防止於基板1與基板固定器11之間產生溫度差。例如，當一面對基板固定器11的溫度進行監視，一面進行預加熱時，可精度良好地對基板1的溫度進行調整。The tank heater 211B heats the substrate 1 mounted on the substrate holder 11 and the mounting surface 110, thereby preventing a temperature difference between the substrate 1 and the substrate holder 11. For example, when pre-heating is performed while monitoring the temperature of the substrate holder 11, the temperature of the substrate 1 can be accurately adjusted.
加熱器211A、槽加熱器211B能夠採用：燈加熱器(lamp heater)、陶瓷加熱器(ceramics heater)、護套加熱器(sheath heater)、或感應加熱器等。The heater 211A and the tank heater 211B can be a lamp heater, a ceramics heater, a sheath heater, an induction heater or the like.
於上述內容中，表示了包含3個室的直列式成膜裝置200的例子，但亦可將圖1所示的電漿成膜裝置10應用於如圖18所示的、包含2個室的直列式成膜裝置200。於包含加熱室211與成膜室220的該2個室的直列式成膜裝置200中，於加熱室211中、進行基板固定器11的放入與取出。於加熱室211中，將放入至加熱室211的基板1預加熱至規定的溫度為止之後，經由開閉式的閘門241，將基板固定器11搬送至成膜室220。於成膜室220中，在基板1形成薄膜之後，經由閘門241，將基板固定器11搬送至加熱室211。然後，自加熱室211將基板固定器11取出。 再者，與圖17所示的放入/加熱室210同樣地，對於圖18所示的加熱室211而言，亦較佳為將槽加熱器211B配置於基板安裝板111之間。In the above description, an example of the in-line film forming apparatus 200 including three chambers is shown. However, the plasma film forming apparatus 10 shown in FIG. 1 may be applied to an in-line type including two chambers as shown in FIG. Film forming apparatus 200. In the in-line film forming apparatus 200 including the two chambers of the heating chamber 211 and the film forming chamber 220, the substrate holder 11 is placed and taken out in the heating chamber 211. After the substrate 1 placed in the heating chamber 211 is preheated to a predetermined temperature in the heating chamber 211, the substrate holder 11 is transferred to the film forming chamber 220 via the opening and closing shutter 241. In the film forming chamber 220, after the substrate 1 is formed into a thin film, the substrate holder 11 is transferred to the heating chamber 211 via the shutter 241. Then, the substrate holder 11 is taken out from the heating chamber 211. Further, similarly to the charging/heating chamber 210 shown in FIG. 17, it is preferable that the heating chamber 211 shown in FIG. 18 has the groove heater 211B disposed between the substrate mounting plates 111.
如上所述，藉由實施形態來記載本發明，但不應理解為作為上述揭示的一部分的論述及圖式會對本發明進行限定。根據上述揭示，對於所屬技術領域中具有通常知識者而言，各種替代實施形態、實例及運用技術為明顯的。As described above, the present invention is described by the embodiments, but it should be understood that the invention is not limited by the description and the drawings. In view of the above disclosure, various alternative embodiments, examples, and operational techniques are apparent to those of ordinary skill in the art.
例如，已表示了如下的例子，即：基板固定器11包含多個基板安裝板111與固定板112，但基板固定器11的形狀不限於此。例如，基板固定器11亦可為單個板。For example, an example has been shown in which the substrate holder 11 includes a plurality of substrate mounting plates 111 and fixing plates 112, but the shape of the substrate holder 11 is not limited thereto. For example, the substrate holder 11 can also be a single plate.
圖19是表示本發明的第2實施形態的電漿成膜裝置的構成的模式圖。圖20是用以對使用本發明的第2實施形態的薄膜形成裝置的薄膜形成方法進行說明的流程圖。以下，參照圖19、圖20來對形成薄膜的方法的例子進行說明。FIG. 19 is a schematic view showing a configuration of a plasma film forming apparatus according to a second embodiment of the present invention. FIG. 20 is a flowchart for explaining a method of forming a thin film using the thin film forming apparatus of the second embodiment of the present invention. Hereinafter, an example of a method of forming a film will be described with reference to FIGS. 19 and 20.
於步驟(step)S11中，將成膜處理對象的半導體矽基板、即基板500，容納於腔室511內。In step S11, the semiconductor substrate for film formation processing, that is, the substrate 500, is housed in the chamber 511.
於步驟S12中，藉由氣體供給機構515，來將預處理氣體121(pretreatment gas)導入至腔室511內。預處理氣體121較佳為：氨(NH3 )氣、氨氣與氮氣(N2 )的混合氣體等。In step S12, a pretreatment gas 121 is introduced into the chamber 511 by the gas supply mechanism 515. The pretreatment gas 121 is preferably a mixed gas of ammonia (NH 3 ) gas, ammonia gas and nitrogen gas (N 2 ).
於步驟S13中，藉由氣體排出機構516來對腔室511 內進行減壓，而將腔室511內的預處理氣體121的壓力設定為規定的值。In step S13, the chamber 511 is accessed by the gas discharge mechanism 516. The pressure is reduced internally, and the pressure of the pretreatment gas 121 in the chamber 511 is set to a predetermined value.
於步驟S14中，使交流電源514導通，經由匹配器(matching box)541，將規定的交流電力供給至基板載板512與高頻電極513之間。此處，不於高頻電極513中設置槽532，將高頻電極513設為單純的平板電極。藉由基板載板512與高頻電極513來構成平行平板型電極。藉此，使腔室511內的預處理氣體121電漿化，而開始進行成膜預處理。亦即，使成膜之前的基板500的表面曝露於氨的高頻電漿(以下稱為「氨電漿」)，氨電漿中的氫自由基與基板500的懸鍵(dangling bond)結合。In step S14, the AC power supply 514 is turned on, and predetermined AC power is supplied between the substrate carrier 512 and the high-frequency electrode 513 via a matching box 541. Here, the groove 532 is not provided in the high-frequency electrode 513, and the high-frequency electrode 513 is a simple plate electrode. A parallel plate-type electrode is formed by the substrate carrier 512 and the high-frequency electrode 513. Thereby, the pretreatment gas 121 in the chamber 511 is plasma-formed, and film formation pretreatment is started. That is, the surface of the substrate 500 before film formation is exposed to a high-frequency plasma of ammonia (hereinafter referred to as "ammonia plasma"), and hydrogen radicals in the ammonia plasma are combined with a dangling bond of the substrate 500. .
於規定的期間，進行成膜預處理之後，於步驟S15中，使交流電源514斷開，成膜預處理結束。然後，於步驟S16中，藉由氣體排出機構516來將預處理氣體121排出，使腔室511內達到高真空。After the film formation pretreatment is performed for a predetermined period of time, in step S15, the AC power supply 514 is turned off, and the film formation pretreatment is completed. Then, in step S16, the pretreatment gas 121 is discharged by the gas discharge mechanism 516 to bring a high vacuum into the chamber 511.
接著，於步驟S17中，藉由氣體供給機構515來將反應氣體122導入至腔室511內。接著，於步驟S18中，藉由氣體排出機構516來對腔室511內進行減壓，將腔室511內的反應氣體122調整為規定的氣體壓力。Next, in step S17, the reaction gas 122 is introduced into the chamber 511 by the gas supply mechanism 515. Next, in step S18, the inside of the chamber 511 is depressurized by the gas discharge mechanism 516, and the reaction gas 122 in the chamber 511 is adjusted to a predetermined gas pressure.
然後，於步驟S19中，使交流電源514導通，經由匹配器541，藉由交流電源514來將規定的交流電力供給至基板載板512與高頻電極513之間。藉此，使腔室511內的包含原料氣體的反應氣體122電漿化。使基板500曝露於所形成的電漿，使電漿中的激發物種於基板500的表面 發生反應，從而於基板500的表面形成薄膜。Then, in step S19, the AC power supply 514 is turned on, and the predetermined AC power is supplied to the substrate carrier 512 and the high-frequency electrode 513 via the AC power supply 514 via the matching unit 541. Thereby, the reaction gas 122 containing the material gas in the chamber 511 is plasma-formed. Exposing the substrate 500 to the formed plasma to cause the excited species in the plasma to be on the surface of the substrate 500 A reaction occurs to form a film on the surface of the substrate 500.
使薄膜成長至規定的膜厚為止之後，於步驟S20中，使交流電源514斷開，成膜處理結束。然後，於步驟S21中，藉由氣體排出機構516來將反應氣體122排出，使腔室511內達到高真空。藉由以上的步驟，於基板500上形成薄膜。After the film has grown to a predetermined film thickness, the AC power supply 514 is turned off in step S20, and the film formation process is completed. Then, in step S21, the reaction gas 122 is discharged by the gas discharge mechanism 516 to bring a high vacuum into the chamber 511. A film is formed on the substrate 500 by the above steps.
於上述內容中，對如下的例子進行了說明，該例子是指：於步驟S16中，將預處理氣體121自腔室511排出。然而，當反應氣體122中所含的原料氣體包含預處理氣體121時，亦可將步驟S16予以省略，該步驟S16是將預處理氣體121自腔室511排出的步驟。In the above description, the following example has been described. This example means that the pretreatment gas 121 is discharged from the chamber 511 in step S16. However, when the material gas contained in the reaction gas 122 contains the pretreatment gas 121, the step S16 may be omitted. This step S16 is a step of discharging the pretreatment gas 121 from the chamber 511.
例如，於將氨氣用作預處理氣體121的情形下，當氨氣包含於原料氣體時，可將上述步驟S16予以省略。又，亦可僅利用反應氣體源182來構成氣體供給源518。For example, in the case where ammonia gas is used as the pretreatment gas 121, when ammonia gas is contained in the material gas, the above-described step S16 can be omitted. Further, the gas supply source 518 may be configured by only the reaction gas source 182.
一般而言，將多晶矽基板用作結晶矽系太陽電池的基板。於多晶矽基板中，多晶矽的晶界(grain boundary)成為缺陷。載子(carrier)被上述缺陷補捉，使太陽電池的轉換效率(以下僅稱為「轉換效率」)下降。In general, a polycrystalline germanium substrate is used as a substrate for a crystalline germanium solar cell. In the polycrystalline germanium substrate, the grain boundary of the polycrystalline germanium becomes a defect. The carrier is trapped by the above-described defects, and the conversion efficiency of the solar cell (hereinafter simply referred to as "conversion efficiency") is lowered.
然而，根據上述已說明的薄膜形成方法，氨電漿中的氫自由基藉由成膜預處理，而與基板500的懸鍵結合。藉此，缺陷對於載子的補捉減少，鈍化效果(passivation effect)增大。結果是，基板500中的載子生命週期(carrier lifetime)延長。因此，使用上述方法來形成太陽電池的抗反射膜或鈍化膜，藉此，轉換效率提高。However, according to the film forming method described above, the hydrogen radicals in the ammonia plasma are combined with the dangling bonds of the substrate 500 by film formation pretreatment. Thereby, the defect is reduced for the carrier, and the passivation effect is increased. As a result, the carrier lifetime of the substrate 500 is prolonged. Therefore, the above method is used to form an antireflection film or a passivation film of a solar cell, whereby conversion efficiency is improved.
圖21中，表示關於太陽電池的轉換效率與成膜之後的基板500的載子生命週期，使用電漿成膜裝置10來進行成膜預處理時與不進行成膜預處理的比較例時的比較結果。於圖21中，比較例的製造方法A是不進行成膜預處理時的方法，即：是不進行圖20所示的流程圖的步驟S12~步驟S16，而藉由步驟S17~步驟S20來形成薄膜的方法。另一方面，進行成膜預處理的製造方法B是依據圖20所示的流程圖的製造方法。FIG. 21 shows a case where the conversion efficiency of the solar cell and the carrier life cycle of the substrate 500 after the film formation are performed, and the plasma film forming apparatus 10 is used to perform the film forming pretreatment and the comparative example in which the film forming pretreatment is not performed. Comparing results. In FIG. 21, the manufacturing method A of the comparative example is a method in which the film forming pretreatment is not performed, that is, steps S12 to S16 of the flowchart shown in FIG. 20 are not performed, and steps S17 to S20 are used. A method of forming a film. On the other hand, the manufacturing method B for performing film formation pretreatment is a manufacturing method according to the flowchart shown in FIG.
為了對圖21所示的轉換效率進行測定，製成如下的樣本(sample)，該樣本形成有氮化矽膜來作為結晶矽系太陽電池的抗反射膜。亦即，於作為多晶矽基板的基板100上，形成有作為氮化矽膜的薄膜。圖22中表示已製成的樣本的具體的構成例子。使磷(P)擴散至p型的多晶矽基板51的表面，而形成n+擴散區域，於n+擴散區域上配置有氮化矽(SiN)膜52。於氮化矽膜52上配置有銀(Ag)電極53，於多晶矽基板51的背面配置有鋁(Al)電極54。氮化矽膜52的折射率為2.0~2.15左右，膜厚為75nm~90nm左右。將光照射至圖6所示的樣本，進行電流電壓測定而取得轉換效率。In order to measure the conversion efficiency shown in FIG. 21, a sample was prepared in which a tantalum nitride film was formed as an antireflection film of a crystalline lanthanide solar cell. That is, a thin film which is a tantalum nitride film is formed on the substrate 100 which is a polycrystalline germanium substrate. A specific configuration example of the prepared sample is shown in Fig. 22 . Phosphorus (P) is diffused to the surface of the p-type polycrystalline germanium substrate 51 to form an n+ diffusion region, and a tantalum nitride (SiN) film 52 is disposed on the n+ diffusion region. A silver (Ag) electrode 53 is disposed on the tantalum nitride film 52, and an aluminum (Al) electrode 54 is disposed on the back surface of the polysilicon substrate 51. The tantalum nitride film 52 has a refractive index of about 2.0 to 2.15 and a film thickness of about 75 nm to 90 nm. Light was irradiated to the sample shown in FIG. 6, and current-voltage measurement was performed to obtain conversion efficiency.
又，準備如下的樣本，作為對成膜之後的基板500的載子生命週期進行測定的樣本，上述樣本如圖23所示，於n型的單晶矽基板61的兩個面，與太陽電池的抗反射膜同樣地形成有氮化矽膜62、63。藉由微波光電導衰減(microwave photoconductive decay，μ-PCD)法，來對載 子生命週期進行測定，該μ-PCD法對照射有雷射(laser)的樣本中所產生的載子的量進行測定。Further, a sample was prepared as a sample for measuring the carrier life cycle of the substrate 500 after the film formation, and the sample was formed on both surfaces of the n-type single crystal germanium substrate 61 and the solar cell as shown in FIG. The anti-reflection film is similarly formed with tantalum nitride films 62 and 63. By microwave photoconductive decay (μ-PCD) method The sub-life cycle was measured, and the μ-PCD method measures the amount of carriers generated in a sample irradiated with a laser.
如圖21所示，於不進行成膜預處理的製造方法A中，轉換效率為15.09%，基板的載子生命週期為2475微秒(μ second)。相對於此，於進行成膜預處理的製造方法B中，轉換效率為15.14%，基板的載子生命週期為2808微秒。亦即，已確認：藉由進行圖2所示的成膜預處理，轉換效率及基板的載子生命週期提高。As shown in FIG. 21, in the manufacturing method A in which the film formation pretreatment was not performed, the conversion efficiency was 15.09%, and the carrier life cycle of the substrate was 2475 microseconds (μ second). On the other hand, in the manufacturing method B in which the film formation pretreatment was performed, the conversion efficiency was 15.14%, and the carrier life cycle of the substrate was 2808 microseconds. That is, it has been confirmed that the conversion efficiency and the carrier life cycle of the substrate are improved by performing the film formation pretreatment shown in FIG.
再者，製造方法B的成膜預處理的條件是：將預處理氣體121設為氨氣，將腔室11內的預處理氣體121的壓力設為100Pa，將基板100曝露於氨電漿的處理時間設為15秒，將交流電源14的電力密度設為83mW/cm2 。Further, the film forming pretreatment of the manufacturing method B is performed by setting the pretreatment gas 121 to ammonia gas, setting the pressure of the pretreatment gas 121 in the chamber 11 to 100 Pa, and exposing the substrate 100 to the ammonia plasma. The processing time was set to 15 seconds, and the power density of the AC power source 14 was set to 83 mW/cm 2 .
如以上所說明，對於本發明的實施形態的電漿成膜裝置10而言，於進行成膜處理之前，將基板100曝露於包含氫的電漿，藉此，基板100的鈍化效果提高。結果是，根據使用電漿成膜裝置10的成膜方法，基板100中的載子生命週期延長，可使太陽電池的轉換效率提高。As described above, in the plasma film forming apparatus 10 according to the embodiment of the present invention, the substrate 100 is exposed to a plasma containing hydrogen before the film forming process, whereby the passivation effect of the substrate 100 is improved. As a result, according to the film forming method using the plasma film forming apparatus 10, the life cycle of the carrier in the substrate 100 is prolonged, and the conversion efficiency of the solar cell can be improved.
於本發明的第2實施形態的電漿成膜裝置10中，如圖19所示，基板1為垂直地配置。於圖19所示的電漿成膜裝置10中，基板載板512及高頻電極513是：呈包括多個齒部分的梳型形狀，上述多個齒部分彼此朝向紙面、而分別朝上下方向延伸，基板載板512與高頻電極513的梳齒部分配置為交叉指狀。基板500分別搭載於基板載板512的與高頻電極513相對向的多個齒部分，因此，可一次性 地對多個基板500進行處理。In the plasma film forming apparatus 10 of the second embodiment of the present invention, as shown in FIG. 19, the substrate 1 is vertically arranged. In the plasma film forming apparatus 10 shown in FIG. 19, the substrate carrier 512 and the high-frequency electrode 513 are in a comb shape including a plurality of tooth portions, and the plurality of tooth portions face each other in the vertical direction toward the paper surface. The substrate holder 512 and the comb-tooth portion of the high-frequency electrode 513 are arranged to have an interdigitated shape. The substrate 500 is mounted on each of the plurality of tooth portions of the substrate carrier 512 that faces the high-frequency electrode 513, and thus can be disposable. The plurality of substrates 500 are processed.
以於高頻電極513的齒部分的表面包括開口部的方式而形成槽532，高頻電極513作為空心陰極電極而發揮功能。於圖19所示的例子中，槽532是將高頻電極513的齒部分予以貫通而形成。於槽532中引起因空心陰極效果產生的電子的封閉，從而以自槽532供給的形態來穩定地產生高密度電漿。結果是，預處理氣體121或原料氣體效率良好地被分解，能夠於短時間內，對多個基板500進行成膜預處理及成膜處理。The groove 532 is formed so that the surface of the tooth portion of the high-frequency electrode 513 includes an opening, and the high-frequency electrode 513 functions as a hollow cathode electrode. In the example shown in FIG. 19, the groove 532 is formed by penetrating the tooth portion of the high-frequency electrode 513. Enclosure of electrons due to the hollow cathode effect is caused in the groove 532, so that high-density plasma is stably generated in a form supplied from the groove 532. As a result, the pretreatment gas 121 or the material gas is efficiently decomposed, and the film formation pretreatment and the film formation treatment can be performed on the plurality of substrates 500 in a short time.
圖24中，表示關於太陽電池的轉換效率與成膜之後的基板500的載子生命週期，使用圖19所示的薄膜形成裝置10來進行成膜預處理時與不進行成膜預處理的比較例時的比較結果。於圖24中，比較例的製造方法A是不進行成膜預處理時的方法，即：是不進行圖20所示的流程圖的步驟S12~步驟S16，而藉由步驟S17~步驟S20來形成薄膜的方法。另一方面，進行成膜預處理的製造方法B是依據圖20所示的流程圖的製造方法。FIG. 24 shows a comparison between the conversion efficiency of the solar cell and the carrier life cycle of the substrate 500 after the film formation, and the film formation pretreatment using the thin film forming apparatus 10 shown in FIG. The comparison result of the case. In FIG. 24, the manufacturing method A of the comparative example is a method in which the film forming pretreatment is not performed, that is, steps S12 to S16 of the flowchart shown in FIG. 20 are not performed, and steps S17 to S20 are used. A method of forming a film. On the other hand, the manufacturing method B for performing film formation pretreatment is a manufacturing method according to the flowchart shown in FIG.
再者，與圖21所示的比較的情形同樣地，形成氮化矽膜作為結晶矽系太陽電池的抗反射膜，從而製成對轉換效率進行測定的樣本(參照圖22)。而且，準備如下的樣本作為對成膜之後的基板500的載子生命週期進行測定的樣本，上述樣本於單晶矽基板的兩個面，與太陽電池的抗反射膜同樣地形成有氮化矽膜(參照圖23)。Further, similarly to the case of the comparison shown in FIG. 21, a tantalum nitride film was formed as an antireflection film of a crystalline lanthanide solar cell, and a sample for measuring conversion efficiency was prepared (see FIG. 22). Further, a sample was prepared as a sample for measuring the carrier life cycle of the substrate 500 after film formation, and the sample was formed with tantalum nitride on the both surfaces of the single crystal germanium substrate in the same manner as the antireflection film of the solar cell. Film (see Figure 23).
成膜預處理的條件是：將預處理氣體121設為氨氣， 將腔室511內的預處理氣體121的壓力設為67Pa，將基板500曝露於氨電漿的處理時間設為5秒，將交流電源514的電力密度設為400mW/cm2 。採用空心陰極電極作為高頻電極513，藉此，可使預處理氣體121的壓力下降，使電力密度增大。The film forming pretreatment is carried out under the condition that the pretreatment gas 121 is set to ammonia gas, the pressure of the pretreatment gas 121 in the chamber 511 is set to 67 Pa, and the treatment time for exposing the substrate 500 to the ammonia plasma is set to 5 seconds. The power density of the AC power source 514 was set to 400 mW/cm 2 . The hollow cathode electrode is used as the high-frequency electrode 513, whereby the pressure of the pretreatment gas 121 can be lowered to increase the power density.
如圖24所示，於不進行成膜預處理的製造方法A中，轉換效率為16.26%，基板的載子生命週期為526微秒。相對於此，於進行成膜預處理的製造方法B中，轉換效率為16.44%，基板的載子生命週期為6751微秒。亦即，藉由進行圖20所示的成膜預處理，轉換效率及基板的載子生命週期提高。As shown in FIG. 24, in the manufacturing method A in which the film formation pretreatment was not performed, the conversion efficiency was 16.26%, and the carrier life cycle of the substrate was 526 microseconds. On the other hand, in the manufacturing method B in which the film formation pretreatment was performed, the conversion efficiency was 16.44%, and the carrier life cycle of the substrate was 6751 microseconds. That is, by performing the film formation pretreatment shown in FIG. 20, the conversion efficiency and the carrier life cycle of the substrate are improved.
根據圖21與圖24的比較，可以說利用空心陰極放電的薄膜形成裝置，與不利用空心陰極放電且使用有平行平板型電極的薄膜形成裝置相比較，使用預處理氣體121的成膜預處理的效果更大。According to the comparison between FIG. 21 and FIG. 24, it can be said that the film forming apparatus using the hollow cathode discharge is used for the film forming pretreatment using the pretreatment gas 121 as compared with the thin film forming apparatus which does not utilize the hollow cathode discharge and uses the parallel plate type electrode. The effect is even greater.
在一實施例中，上述基板是於p型矽基板上形成有表面擴散濃度為1×1018 ~1×1022 的n型半導體層的太陽電池基板，或是，在一實施例中，於n型矽基板上形成有表面擴散濃度為1×1018 ~1×1022 的p型半導體層的太陽電池基板。In one embodiment, the substrate is a solar cell substrate having an n-type semiconductor layer having a surface diffusion concentration of 1×10 18 to 1×10 22 formed on the p-type germanium substrate, or, in an embodiment, A solar cell substrate having a p-type semiconductor layer having a surface diffusion concentration of 1 × 10 18 to 1 × 10 22 is formed on the n-type germanium substrate.
在一實施例中，上述基板上所形成的上述薄膜是：配置於上述太陽電池基板上的折射率為1.8~3.0、膜厚為50nm~150nm且包含氮化矽的抗反射膜。In one embodiment, the thin film formed on the substrate is an antireflection film comprising a tantalum nitride having a refractive index of 1.8 to 3.0 and a film thickness of 50 nm to 150 nm disposed on the solar cell substrate.
本發明還提出一種結晶太陽電池，其特徵在於包括： 使用所述的電漿成膜裝置而形成的抗反射膜或鈍化膜。The invention also provides a crystalline solar cell, characterized in that it comprises: An antireflection film or a passivation film formed using the plasma film forming apparatus.
如此，本發明當然包含此處未揭示的各種實施形態等。因此，本發明的技術範圍根據上述說明，僅由妥當的申請專利範圍的發明特定事項決定。As such, the present invention naturally includes various embodiments and the like not disclosed herein. Therefore, the technical scope of the present invention is determined by the above-described description only by the specific matters of the invention of the proper patent application scope.
本發明的電漿成膜裝置能夠利用於在基板上形成膜的半導體器件的製造業中。The plasma film forming apparatus of the present invention can be utilized in the manufacturing of semiconductor devices in which a film is formed on a substrate.
1、500‧‧‧基板1, 500‧‧‧ substrate
10‧‧‧電漿成膜裝置10‧‧‧ Plasma film forming device
11‧‧‧基板固定器11‧‧‧Substrate holder
12、12A‧‧‧陰極電極12, 12A‧‧‧ cathode electrode
13‧‧‧氣體供給裝置13‧‧‧ gas supply device
14、17、514‧‧‧交流電源14, 17, 514 ‧ ‧ AC power supply
15‧‧‧排氣裝置15‧‧‧Exhaust device
16‧‧‧脈衝產生器16‧‧‧ pulse generator
18‧‧‧功率分配器18‧‧‧Power splitter
20、511‧‧‧腔室20, 511‧‧ ‧ chamber
30、212‧‧‧支持台30, 212‧‧‧ support desk
31‧‧‧導入孔31‧‧‧Introduction hole
51‧‧‧p型的多晶矽基板51‧‧‧p-type polycrystalline germanium substrate
52、62、63‧‧‧氮化矽膜52, 62, 63‧‧‧ nitride film
53‧‧‧銀(Ag)電極53‧‧‧Silver (Ag) electrode
54‧‧‧鋁(Al)電極54‧‧‧Aluminum (Al) electrode
61‧‧‧n型的單晶矽基板61‧‧‧n type single crystal germanium substrate
100‧‧‧製程氣體100‧‧‧Process Gas
110‧‧‧搭載面110‧‧‧Jacketing surface
111‧‧‧基板安裝板111‧‧‧Substrate mounting board
112‧‧‧固定板112‧‧‧ fixed board
113‧‧‧氣體導入孔113‧‧‧ gas introduction hole
120‧‧‧貫通孔120‧‧‧through holes
121‧‧‧預處理氣體121‧‧‧Pretreatment gas
122‧‧‧反應氣體122‧‧‧Reactive gas
130‧‧‧氣體供給噴嘴130‧‧‧ gas supply nozzle
150‧‧‧排氣孔150‧‧‧ venting holes
151‧‧‧第1排氣調整板151‧‧‧1st exhaust adjustment plate
152‧‧‧第2排氣調整板152‧‧‧2nd exhaust adjustment plate
181‧‧‧預處理氣體源181‧‧‧Pretreatment gas source
182‧‧‧反應氣體源182‧‧‧Reactive gas source
200‧‧‧直列式成膜裝置200‧‧‧Inline film forming device
210‧‧‧放入/加熱室210‧‧‧Input/heating room
211‧‧‧加熱室211‧‧‧heating room
211A‧‧‧加熱器211A‧‧‧heater
211B‧‧‧槽加熱器211B‧‧‧ slot heater
213‧‧‧隔熱板213‧‧‧ Thermal insulation board
220‧‧‧成膜室220‧‧‧ Filming room
230‧‧‧取出室230‧‧‧Extraction room
240A、240B、241‧‧‧閘門240A, 240B, 241‧‧ ‧ gate
401‧‧‧凹部401‧‧‧ recess
402‧‧‧氣體噴出口402‧‧‧ gas outlet
512‧‧‧基板載板512‧‧‧Substrate carrier
513‧‧‧高頻電極513‧‧‧High frequency electrode
515‧‧‧氣體供給機構515‧‧‧ gas supply mechanism
516‧‧‧氣體排出機構516‧‧‧ gas discharge mechanism
518‧‧‧氣體供給源518‧‧‧ gas supply source
532‧‧‧槽532‧‧‧ slot
541‧‧‧匹配器541‧‧‧matcher
I-I‧‧‧方向I-I‧‧ Direction
S11~S21‧‧‧步驟S11~S21‧‧‧Steps
圖1是表示本發明的實施形態的電漿成膜裝置的構成的模式圖。Fig. 1 is a schematic view showing a configuration of a plasma film forming apparatus according to an embodiment of the present invention.
圖2是表示本發明的實施形態的電漿成膜裝置中所使用的基板固定器的例子的模式圖。FIG. 2 is a schematic view showing an example of a substrate holder used in the plasma film forming apparatus according to the embodiment of the present invention.
圖3是表示本發明的實施形態的電漿成膜裝置的陰極電極的例子的模式性構造圖。3 is a schematic structural view showing an example of a cathode electrode of a plasma film forming apparatus according to an embodiment of the present invention.
圖4是表示比較例的陰極電極的例子的模式性構造圖。4 is a schematic structural view showing an example of a cathode electrode of a comparative example.
圖5是表示本發明的實施形態的電漿成膜裝置的陰極電極的例子的模式圖。FIG. 5 is a schematic view showing an example of a cathode electrode of a plasma film forming apparatus according to an embodiment of the present invention.
圖6是用以對本發明的實施形態的電漿成膜裝置中的製程氣體的導入方法進行說明的模式圖。FIG. 6 is a schematic view for explaining a method of introducing a process gas in the plasma film forming apparatus of the embodiment of the present invention.
圖7是用以對本發明的實施形態的電漿成膜裝置中的氣體供給噴嘴的配置方法進行說明的模式圖。FIG. 7 is a schematic view for explaining a method of arranging a gas supply nozzle in the plasma film forming apparatus according to the embodiment of the present invention.
圖8是用以對本發明的實施形態的電漿成膜裝置中的 基板的搭載方法進行說明的模式圖。Figure 8 is a view showing a plasma film forming apparatus according to an embodiment of the present invention; A schematic diagram of a method of mounting a substrate will be described.
圖9是表示本發明的實施形態的電漿成膜裝置的氣體供給噴嘴的形狀例的模式圖，圖9(a)~圖9(c)的上方所示的圖是平面圖，下方所示的圖是沿著平面圖的I-I方向的剖面圖。FIG. 9 is a schematic view showing a shape example of a gas supply nozzle of the plasma film forming apparatus according to the embodiment of the present invention, and the top view of FIGS. 9(a) to 9(c) is a plan view, and the lower side is shown. The figure is a cross-sectional view along the II direction of the plan view.
圖10是用以對本發明的實施形態的電漿成膜裝置中的排氣方法進行說明的模式圖。FIG. 10 is a schematic view for explaining an exhaust method in the plasma film forming apparatus of the embodiment of the present invention.
圖11是用以對本發明的實施形態的電漿成膜裝置中的其他排氣方法進行說明的模式圖。Fig. 11 is a schematic view for explaining another exhaust method in the plasma film forming apparatus of the embodiment of the present invention.
圖12是表示本發明的實施形態的變形例的電漿成膜裝置的構成的模式圖。FIG. 12 is a schematic view showing a configuration of a plasma film forming apparatus according to a modification of the embodiment of the present invention.
圖13是表示本發明的實施形態的其他變形例的電漿成膜裝置的構成的模式圖。FIG. 13 is a schematic view showing a configuration of a plasma film forming apparatus according to another modification of the embodiment of the present invention.
圖14是表示本發明的實施形態的其他變形例的電漿成膜裝置的構成的模式圖。FIG. 14 is a schematic view showing a configuration of a plasma film forming apparatus according to another modification of the embodiment of the present invention.
圖15是表示將本發明的實施形態的電漿成膜裝置應用於直列式成膜裝置的成膜室的例子的構成的模式圖。FIG. 15 is a schematic view showing a configuration of an example in which a plasma film forming apparatus according to an embodiment of the present invention is applied to a film forming chamber of an in-line film forming apparatus.
圖16是本發明的實施形態的電漿成膜裝置的腔室為圓筒形狀時的模式圖。Fig. 16 is a schematic view showing a state in which a chamber of a plasma film forming apparatus according to an embodiment of the present invention has a cylindrical shape.
圖17是表示本發明的實施形態的電漿成膜裝置的加熱室的構成例子的模式圖。FIG. 17 is a schematic view showing a configuration example of a heating chamber of a plasma film forming apparatus according to an embodiment of the present invention.
圖18是表示將本發明的實施形態的電漿成膜裝置應用於直列式成膜裝置的成膜室的其他例子的構成的模式圖。FIG. 18 is a schematic view showing a configuration of another example in which a plasma film forming apparatus according to an embodiment of the present invention is applied to a film forming chamber of an in-line film forming apparatus.
圖19是表示本發明的第2實施形態的電漿成膜裝置的構成的模式圖。FIG. 19 is a schematic view showing a configuration of a plasma film forming apparatus according to a second embodiment of the present invention.
圖20是用以對使用本發明的第2實施形態的薄膜形成裝置的薄膜形成方法進行說明的流程圖。FIG. 20 is a flowchart for explaining a method of forming a thin film using the thin film forming apparatus of the second embodiment of the present invention.
圖21是表示本發明的薄膜形成裝置所形成的薄膜、與比較例所形成的薄膜的比較的表。Fig. 21 is a table showing a comparison between a film formed by the film forming apparatus of the present invention and a film formed in a comparative example.
圖22是表示用以對轉換效率進行測定的樣本的構造的模式圖。Fig. 22 is a schematic view showing the structure of a sample for measuring conversion efficiency.
圖23是表示用以對載子生命週期進行測定的樣本的構造的模式圖。Fig. 23 is a schematic view showing the structure of a sample for measuring a carrier life cycle.
圖24是表示本發明的第2實施形態的薄膜形成裝置所形成的薄膜、與比較例所形成的薄膜的比較的表。FIG. 24 is a table showing a comparison between a film formed by the film forming apparatus according to the second embodiment of the present invention and a film formed in a comparative example.
1‧‧‧基板1‧‧‧Substrate
10‧‧‧電漿成膜裝置10‧‧‧ Plasma film forming device
11‧‧‧基板固定器11‧‧‧Substrate holder
12‧‧‧陰極電極12‧‧‧Cathode electrode
13‧‧‧氣體供給裝置13‧‧‧ gas supply device
14‧‧‧交流電源14‧‧‧AC power supply
15‧‧‧排氣裝置15‧‧‧Exhaust device
20‧‧‧腔室20‧‧‧ chamber
100‧‧‧製程氣體100‧‧‧Process Gas
110‧‧‧搭載面110‧‧‧Jacketing surface
111‧‧‧基板安裝板111‧‧‧Substrate mounting board
112‧‧‧固定板112‧‧‧ fixed board
Claims (19)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2011/071796 WO2013046286A1 (en) | 2011-09-26 | 2011-09-26 | Plasma film forming apparatus |
| PCT/JP2011/074318 WO2013057835A1 (en) | 2011-10-21 | 2011-10-21 | Thin film forming apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201321550A TW201321550A (en) | 2013-06-01 |
| TWI494466B true TWI494466B (en) | 2015-08-01 |
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| TW101135387A TWI494466B (en) | 2011-09-26 | 2012-09-26 | Plasma film forming apparatus, crystal solar cell and semiconductor element |
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| JP (1) | JP5768890B2 (en) |
| KR (1) | KR101650795B1 (en) |
| CN (1) | CN103890229B (en) |
| TW (1) | TWI494466B (en) |
| WO (1) | WO2013046286A1 (en) |
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| WO2014188576A1 (en) * | 2013-05-24 | 2014-11-27 | 株式会社島津製作所 | Plasma processing apparatus |
| JP2015015382A (en) * | 2013-07-05 | 2015-01-22 | 株式会社島津製作所 | Film deposition device and film deposition method |
| DE102015111144A1 (en) * | 2015-07-09 | 2017-01-12 | Hanwha Q.CELLS GmbH | Device for pairwise recording of substrates |
| JP6652644B2 (en) * | 2016-07-21 | 2020-02-26 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Plasma generation apparatus, substrate processing apparatus, semiconductor device manufacturing method and program |
| EP3367419B1 (en) * | 2017-02-28 | 2019-08-14 | Meyer Burger (Germany) AG | Electrode unit with an internal electric network for feeding high frequency voltage and carrier assembly for a plasma processing system |
| CN108149225A (en) * | 2018-02-06 | 2018-06-12 | 江苏微导纳米装备科技有限公司 | A kind of vacuum reaction device and reaction method |
| DE102020112641A1 (en) | 2020-05-11 | 2021-11-11 | Hanwha Q Cells Gmbh | Holding device and use of the holding device |
| CN111893455B (en) * | 2020-09-08 | 2023-10-03 | 河北美普兰地环保科技有限公司 | Metal substrate carbon nano film material manufacturing equipment and preparation method thereof |
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| TW562868B (en) * | 2000-03-23 | 2003-11-21 | Sharp Kk | Plasma deposition device for forming thin film |
| JP2009164515A (en) * | 2008-01-10 | 2009-07-23 | Shimadzu Corp | Antireflection film forming method and solar cell |
| JP2011077323A (en) * | 2009-09-30 | 2011-04-14 | Tokyo Electron Ltd | Method for forming silicon nitride film, and method for producing semiconductor memory device |
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| JPH05209279A (en) * | 1991-10-29 | 1993-08-20 | Canon Inc | Metal film forming device and metal film forming method |
| JP2001192835A (en) * | 2000-01-11 | 2001-07-17 | Kanegafuchi Chem Ind Co Ltd | Substrate transfer cart used in in-line type plasma enhanced cvd system |
| WO2002020871A1 (en) | 2000-09-08 | 2002-03-14 | Centrotherm Elektrische Anlagen Gmbh + Co. | Plasma boat |
| JP4849316B2 (en) * | 2006-02-21 | 2012-01-11 | 株式会社Ｉｈｉ | Vacuum deposition system |
| JP2009231385A (en) * | 2008-03-19 | 2009-10-08 | Sanyo Electric Co Ltd | Method of manufacturing semiconductor device |
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2011
- 2011-09-26 KR KR1020147001147A patent/KR101650795B1/en active IP Right Grant
- 2011-09-26 JP JP2013535647A patent/JP5768890B2/en not_active Expired - Fee Related
- 2011-09-26 CN CN201180072547.7A patent/CN103890229B/en not_active Expired - Fee Related
- 2011-09-26 WO PCT/JP2011/071796 patent/WO2013046286A1/en active Application Filing
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW562868B (en) * | 2000-03-23 | 2003-11-21 | Sharp Kk | Plasma deposition device for forming thin film |
| JP2009164515A (en) * | 2008-01-10 | 2009-07-23 | Shimadzu Corp | Antireflection film forming method and solar cell |
| JP2011077323A (en) * | 2009-09-30 | 2011-04-14 | Tokyo Electron Ltd | Method for forming silicon nitride film, and method for producing semiconductor memory device |
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| Publication number | Publication date |
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| JP5768890B2 (en) | 2015-08-26 |
| JPWO2013046286A1 (en) | 2015-03-26 |
| CN103890229A (en) | 2014-06-25 |
| KR20140037226A (en) | 2014-03-26 |
| TW201321550A (en) | 2013-06-01 |
| CN103890229B (en) | 2015-12-16 |
| WO2013046286A1 (en) | 2013-04-04 |
| KR101650795B1 (en) | 2016-08-24 |
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