WO2002020871A1 - Plasma boat - Google Patents

Plasma boat Download PDF

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Publication number
WO2002020871A1
WO2002020871A1 PCT/DE2001/003388 DE0103388W WO0220871A1 WO 2002020871 A1 WO2002020871 A1 WO 2002020871A1 DE 0103388 W DE0103388 W DE 0103388W WO 0220871 A1 WO0220871 A1 WO 0220871A1
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WO
WIPO (PCT)
Prior art keywords
plasma
boat according
receiving
plasma boat
substrates
Prior art date
Application number
PCT/DE2001/003388
Other languages
German (de)
French (fr)
Inventor
Rainer MÖLLER
Gernot Wandel
Hans Reichart
Original Assignee
Centrotherm Elektrische Anlagen Gmbh + Co.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Elektrische Anlagen Gmbh + Co. filed Critical Centrotherm Elektrische Anlagen Gmbh + Co.
Publication of WO2002020871A1 publication Critical patent/WO2002020871A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67333—Trays for chips
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports

Definitions

  • the invention relates to a plasma boat for receiving plate-shaped substrates, such as solar cells, and for treating the same in a processing device, such as e.g. a plasma CVD system (PECVD) or the like, consisting of a multiplicity of mutually parallel receiving plates for receiving and fixing the substrates during the treatment, the receiving plates being mutually insulated from one another alternately with the outputs of a high-frequency generator (HF generator ) are connected.
  • PECVD plasma CVD system
  • HF generator high-frequency generator
  • Such plasma boats which can accommodate a large number of substrates, are used, for example, in the coating of solar cells with a silicon nitride antireflection coating.
  • substrates attached to the plasma boat can also be made with any other layers such as. e.g. doped or undoped silicon oxide or polysilicon can be coated.
  • the solar cells are attached to a carrier, the so-called boat.
  • the boat essentially consists of a plurality of graphite plates arranged parallel to one another, which are arranged electrically insulated from one another. These graphite plates are alternately connected to an output of the HF generator.
  • Fig. 1 shows a schematic plan view of a boat known according to the prior art.
  • individual mounting plates 2 graphite plates
  • the substrates 3 to be coated solar cells
  • the individual mounting plates 2 are connected to the output terminals of the HF generator 7.
  • reduced pressure usually 0.5 to 5 mbar
  • elevated temperature usually 300 ° C ... 600 ° C
  • the boat in the PECVD system with the substrates 3 to be coated is exposed to an atmosphere of reactive gases and by feeding the high-frequency power generates a plasma between the receiving plates of the boat.
  • the properties of the layer produced can be influenced in many ways.
  • the substrates are fastened to the fastening plates with the aid of mushroom-shaped fastening buttons 8, as can be seen from FIG. 2 - state of the art. Additional stop pins 9 prevent the substrate from turning away.
  • the fastening buttons cause zones in the edge areas of the substrates to be shaded. This means that these areas are not or only partially coated. In the case of solar cells, this means that the usually blue antireflection coating creates uncoated light gray zones with colored transitions that severely impair the visual appearance of the cells.
  • the invention is therefore based on the object of creating a plasma boat which permits automatic loading and in which, in particular, ensures a uniform coating of the substrates up to the edge region.
  • the novel plasma boat significantly simplifies the handling of substrates and at the same time improves handling safety.
  • the receiving plates of the plasma boat are preferably spaced one above the other horizontally or slightly obliquely, the receiving plates being provided with receiving devices for the substrates which on the one hand fix them spatially and on the other hand provide electrical contacting of the substrates.
  • a three-point support is provided for the electrical contacting of the substrates in the receiving device.
  • This three-point support is expediently realized within the on device by three support pins, which protrude from a triangle delimiting a small distance from the edge of the receiving device.
  • the support pins can be inserted into the mounting plates or can be connected in one piece with them.
  • the receiving device consists of a machined into the receiving plate Well, the outline of which corresponds to the outline of the substrate to be fixed, the support pins being arranged within the well.
  • the support pins are arranged at a distance from the boundary edge of the depression and end below the plate surface of the receiving plate, so that the inserted substrate is positively fixed.
  • the support pins and the recess can be produced in a simple manner by milling.
  • the receiving device consists of positioning pins connected to the receiving plate and protruding therefrom, wherein a pair of positioning pins is arranged on both sides of a corner of the substrate to be fixed.
  • two pairs of positioning pins are provided which protrude from the mounting plates at two diametrically opposite corners of the substrate.
  • the contact pins serving for electrical contacting are arranged in such a way that they protrude from the mounting plate within the area delimited by the positioning pins.
  • the mounting plates consist of a conductive, temperature-resistant material which is inert to the process gases used in the PCVD system.
  • Graphite is particularly suitable for this.
  • the support pins are preferably arranged at a short distance from the edge of the substrate below it.
  • FIG. 3 shows a receiving plate 2 according to the invention with recessed receiving devices
  • FIG. 4 shows a receiving plate according to the invention with protruding positioning pins 5 for the spatial fixing of the
  • Substrates 3 and support pins 1 for electrical contacting are identical to Substrates 3 and support pins 1 for electrical contacting.
  • the mounting plates 2 are arranged horizontally or only with a slight inclination.
  • the substrates 3 lie on the mounting plate 2 by gravity.
  • receiving devices 6 are provided, which according to FIG. 3 consist of recesses 4 milled into the receiving plate 2.
  • the size of the depressions 4 corresponds to the dimensions of the substrates 3, i.e. the depressions 4 are slightly larger than the substrates 3 in order to be able to insert them easily.
  • the device 6 is formed by positioning pins 5, which are arranged in pairs and which fix the substrates 3 at diametrically opposite corners.
  • the support and electrical contacting of the substrates is also carried out here by support pins 1.
  • the substrates 3 are held in position by the walls of the depressions 4 (see see) or the positioning pins 5.
  • the dimensions of the recess 4 or the position of the positioning pins 5 can be selected such that a position tolerance of +/- 1 mm can be permitted when loading, whereas in the case of the boat known hitherto, the substrates on the mounting plate slide up to the point of contact the fastening buttons must be pushed towards them.
  • the support pins 1 form a three-point support, which ensure constant contact and therefore a homogeneous coating in the plasma boat.
  • the location of the support points a few millimeters from the edge of the substrates ensures that the support pins 1 are not coated and that the contacting is not changed by the coatings.
  • the individual mounting plates 2 are designed to be stackable.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention relates to a plasma boat for supporting plate-like substrates (3) and for treating the same in a processing device such as a plasma CVD system (PECVD) or similar, comprising a number of parallel supporting plates (2). Said supporting plates (2) are alternately connected to the outputs of a high frequency generator (HF generator) in such a manner that they are insulated in relation to each other. The aim of the invention is to create a plasma boat that enables automatic fitting and which especially guarantees uniform coating of the substrates (3) as far as the edge area. The substrates (3) supported by the inventive plasma boat are three-dimensionally fixed on the supporting plates (2) by the force of gravity, lying in an essentially horizontal position. To this end, supporting devices (6) in which a three-point bearing with bearing pins (1) for electrical contacting is located are provided.

Description

Plasmaboot plasma boat
Die Erfindung betrifft ein Plasmaboot zur Aufnahme von plat- tenförmigen Substraten, wie Solarzellen und zur Behandlung der- selben in einer Bearbeitungseinrichtung, wie z.B. einer Plasma- CVD-Anlage (PECVD) o.dgl., bestehend aus einer Vielzahl zueinander paralleler Aufnahmeplatten zur Aufnahme und Fixierung der Substrate während der Behandlung, wobei die Aufnahmeplatten ge- geneinander isoliert wechselweise mit den Ausgängen eines Hochfrequenz-Generators (HF-Generator) verbunden sind.The invention relates to a plasma boat for receiving plate-shaped substrates, such as solar cells, and for treating the same in a processing device, such as e.g. a plasma CVD system (PECVD) or the like, consisting of a multiplicity of mutually parallel receiving plates for receiving and fixing the substrates during the treatment, the receiving plates being mutually insulated from one another alternately with the outputs of a high-frequency generator (HF generator ) are connected.
Derartige Plasmaboote, die eine Vielzahl von Substraten aufnehmen können, werden beispielsweise bei der Beschichtung von Solarzellen mit einem Siliziumnitrid-Antireflexbelag eingesetzt . Selbstverständlich können auf dem Plasmaboot befestigte Substrate auch mit beliebigen anderen Schichten wie. z.B. dotiertes oder undotiertes Siliziumoxid oder auch Polysilizium beschichtet werden.Such plasma boats, which can accommodate a large number of substrates, are used, for example, in the coating of solar cells with a silicon nitride antireflection coating. Of course, substrates attached to the plasma boat can also be made with any other layers such as. e.g. doped or undoped silicon oxide or polysilicon can be coated.
Zum Beschichten von Solarzellen nach dem Verfahren der plasmaunterstützten GasphasenabScheidung (nachfolgend mit PECVD bezeichnet) , werden die Solarzellen auf einem Träger, dem sogenannten Boot befestigt. Üblicherweise besteht das Boot im we- sentlichen aus einer Mehrzahl von parallel zueinander angeordneten Graphitplatten, die gegeneinander elektrisch isoliert angeordnet sind. Diese Graphitplatten sind wechselweise jeweils mit einem Ausgang des HF-Generators verbunden.To coat solar cells using the plasma-assisted vapor deposition process (hereinafter referred to as PECVD), the solar cells are attached to a carrier, the so-called boat. Usually, the boat essentially consists of a plurality of graphite plates arranged parallel to one another, which are arranged electrically insulated from one another. These graphite plates are alternately connected to an output of the HF generator.
Fig. 1 zeigt eine schematische Draufsicht auf ein nach dem Stand der Technik bekanntes Boot. Hier sind einzelne Aufnahmeplatten 2 (Graphitplatten) üblicherweise senkrecht angeordnet und die zu beschichtenden Substrate 3 (Solarzellen) an diesen befestigt. Die einzelnen Aufnahmeplatten 2 sind mit den Aus- gangsklemmen des HF-Generators 7 verbunden. Unter vermindertem Druck (üblicherweise 0,5 bis 5 mbar) und erhöhter Temperatur (üblicherweise 300 °C ... 600 °C) wird das Boot in der PECVD-Anlage mit den zu beschichtenden Substraten 3 einer Atmosphäre von reaktiven Gasen ausgesetzt und durch Einspeisen der Hochfrequenzleistung ein Plasma zwischen den Aufnahmeplatten des Bootes erzeugt .Fig. 1 shows a schematic plan view of a boat known according to the prior art. Here individual mounting plates 2 (graphite plates) are usually arranged vertically and the substrates 3 to be coated (solar cells) are attached to them. The individual mounting plates 2 are connected to the output terminals of the HF generator 7. Under reduced pressure (usually 0.5 to 5 mbar) and elevated temperature (usually 300 ° C ... 600 ° C) the boat in the PECVD system with the substrates 3 to be coated is exposed to an atmosphere of reactive gases and by feeding the high-frequency power generates a plasma between the receiving plates of the boat.
Durch Änderung von Temperatur, Druck, Frequenz, Mischungs- Verhältnis der Gase, Hochfrequenzleistung, können die Eigenschaften der erzeugten Schicht vielfältig beeinflusst werden.By changing the temperature, pressure, frequency, mixing ratio of the gases, high-frequency power, the properties of the layer produced can be influenced in many ways.
Bei den aus dem Stand der Technik bekannten Plasmabooten werden die Substrate mit Hilfe von pilzförmigen Befestigungsknöpfen 8 an den Befestigungsplatten befestigt, wie aus Fig. 2 - Stand der Technik - ersichtlich ist. Zusätzliche Stopp-Stifte 9 verhindern ein Wegdrehen des Substrates .In the plasma boats known from the prior art, the substrates are fastened to the fastening plates with the aid of mushroom-shaped fastening buttons 8, as can be seen from FIG. 2 - state of the art. Additional stop pins 9 prevent the substrate from turning away.
Die Nachteile dieses Standes der Technik sind darin zu sehen, dass eine automatische Beschickung eines solchen Bootes nahezu unmöglich ist, da die Substrate sehr präzise an den Befestigungsknöpfen positioniert werden müssen. Das ist bei sehr großen Booten, die bis zu 250 Substrate des Formates 100 mm x 100 mm aufnehmen können, wegen der im Boot auftretenden Toleranzen und Verformungen unter der wechselnden Temperaturbelastung sehr schwierig.The disadvantages of this prior art are the fact that automatic loading of such a boat is almost impossible, since the substrates have to be positioned very precisely on the fastening buttons. This is very difficult for very large boats, which can hold up to 250 substrates of 100 mm x 100 mm format, because of the tolerances and deformations occurring in the boat under the changing temperature load.
Darüberhinaus führen die Befestigungsknöpfe dazu, dass Zonen in den Randbereichen der Substrate abgeschattet werden. Das führt dazu, dass diese Bereiche nicht oder nur teilweise beschichtet werden. Bei Solarzellen bedeutet das, dass in dem üblicherweise blauen Antireflexbelag unbeschichtete hellgraue Zonen mit farbigen Übergängen entstehen, die das optische Erscheinungsbild der Zellen stark beeinträchtigen. Der Erfindung liegt daher die Aufgabe zugrunde, ein Plasmaboot zu schaffen, welches eine automatische Bestückung erlaubt und bei dem insbesondere eine gleichmäßige Beschichtung der Substrate bis in den Randbereich gewährleistet .In addition, the fastening buttons cause zones in the edge areas of the substrates to be shaded. This means that these areas are not or only partially coated. In the case of solar cells, this means that the usually blue antireflection coating creates uncoated light gray zones with colored transitions that severely impair the visual appearance of the cells. The invention is therefore based on the object of creating a plasma boat which permits automatic loading and in which, in particular, ensures a uniform coating of the substrates up to the edge region.
Diese Aufgabe wird bei einem Plasmaboot der eingangs genannten Art dadurch gelöst, dass die Substrate durch Schwerkraft auf den Aufnahmeplatten im wesentlichen horizontal liegend dreidimensional fixiert sind.This object is achieved in a plasma boat of the type mentioned at the outset in that the substrates are fixed in a three-dimensionally horizontal manner by gravity on the mounting plates.
Durch das neuartige Plasmaboot wird eine wesentliche Vereinfachung der Handhabung von Substraten erreicht und gleichzeitig die HandhabungsSicherheit verbessert.The novel plasma boat significantly simplifies the handling of substrates and at the same time improves handling safety.
Die Aufnahmeplatten des Plasmabootes sind vorzugsweise ab- standsweise übereinander!iegend horizontal oder leicht schräg ausgerichtet, wobei die Aufnahmeplatten mit Aufnahmevorrichtun- gen für die Substrate versehen sind, die diese einerseits eine räumlich fixieren und andererseits eine elektrische Kontaktie- rung der Substrate realisieren.The receiving plates of the plasma boat are preferably spaced one above the other horizontally or slightly obliquely, the receiving plates being provided with receiving devices for the substrates which on the one hand fix them spatially and on the other hand provide electrical contacting of the substrates.
Um eine größtmögliche Kontaktsicherheit zu erreichen, ist für die elektrische Kontaktierung der Substrate in der Aufnahmevorrichtung eine Dreipunktauflage vorgesehen.In order to achieve the greatest possible contact reliability, a three-point support is provided for the electrical contacting of the substrates in the receiving device.
Diese Dreipunktauflage wird zweckmäßigerweise innerhalb der Auf ahmevorrichtung durch drei Auflagestifte realisiert, die ein gedachtes Dreieck umgrenzend in geringem Abstand zum Rand aus der Aufnahmevorrichtung hervorstehen.This three-point support is expediently realized within the on device by three support pins, which protrude from a triangle delimiting a small distance from the edge of the receiving device.
Die Auflagestifte können dabei in die Aufnahmeplatten einsetz- bar, oder mit diesen einstückig verbunden sein.The support pins can be inserted into the mounting plates or can be connected in one piece with them.
In einer Ausgestaltung der Erfindung besteht die Aufnahme- Vorrichtung aus einer in die Aufnahmeplatte eingearbeiteten Vertiefung, deren Umriss dem Umriss des zu fixierenden Substrates entspricht, wobei die Auflagestifte innerhalb der Vertiefung angeordnet sind.In one embodiment of the invention, the receiving device consists of a machined into the receiving plate Well, the outline of which corresponds to the outline of the substrate to be fixed, the support pins being arranged within the well.
Die Auflagestifte sind in einem Abstand zum Umgrenzungsrand der Vertiefung angeordnet und enden unterhalb der Plattenoberfläche der Aufnahmeplatte, so dass das eingelegte Substrat formschlüssig fixiert werden.The support pins are arranged at a distance from the boundary edge of the depression and end below the plate surface of the receiving plate, so that the inserted substrate is positively fixed.
Die Auflagestifte und die Vertiefung können auf einfache Weise in einem Arbeitsgang durch Fräsen hergestellt werden.The support pins and the recess can be produced in a simple manner by milling.
In einer Variante der Erfindung besteht die Aufnahmevorrichtung aus mit der Aufnah eplatte verbundenen und aus dieser hervor- stehenden Positionierstiften, wobei jeweils ein Positionierstiftpaar beidseits einer Ecke des zu fixierenden Substrates angeordnet ist .In a variant of the invention, the receiving device consists of positioning pins connected to the receiving plate and protruding therefrom, wherein a pair of positioning pins is arranged on both sides of a corner of the substrate to be fixed.
Für eine sichere Positionierung und Fixierung des Substrates genügt es, wenn zwei Positionierstiftpaare vorgesehen werden, die an zwei diametral gegenüberliegenden Ecken des Substrates aus den Aufnahmeplatten hervorstehen.For secure positioning and fixing of the substrate, it is sufficient if two pairs of positioning pins are provided which protrude from the mounting plates at two diametrically opposite corners of the substrate.
Die der elektrischen Kontaktierung dienenden Auflagestifte sind so angeordnet, dass diese innerhalb der durch die Positionier- stifte umgrenzten Fläche aus der Aufnahmeplatte hervorstehen.The contact pins serving for electrical contacting are arranged in such a way that they protrude from the mounting plate within the area delimited by the positioning pins.
In einer weiteren Ausgestaltung der Erfindung bestehen die Aufnahmeplatten aus einem leitfähigen, temperaturbeständigen Material, das gegen die in der PCVD-Anlage eingesetzten Prozeßgase inert ist. Besonders geeignet ist hierfür Graphit.In a further embodiment of the invention, the mounting plates consist of a conductive, temperature-resistant material which is inert to the process gases used in the PCVD system. Graphite is particularly suitable for this.
Die Auflagestifte sind vorzugsweise in einem geringen Abstand zum Rand des Substrates unterhalb desselben angeordnet.The support pins are preferably arranged at a short distance from the edge of the substrate below it.
Um eine einfache Bestückung der Aufnahmeplatten 2 zu ermögli- chen, sind diese stapelbar ausgeführt..In order to enable simple mounting of the mounting plates 2 Chen, these are stackable ..
Die Erfindung soll nachfolgend an einem Ausführungsbeispiel näher erläutert werden. In den zugehörigen Zeichnungen zeigen:The invention will be explained in more detail using an exemplary embodiment. In the accompanying drawings:
Fig. 1 ein Plasmaboot nach dem Stand der Technik;1 shows a plasma boat according to the prior art;
Fig. 2 die Befestigungsvorrichtung für Substrate entsprechend dem Stand der Technik,-2 shows the fastening device for substrates according to the prior art,
Fig. 3 eine erfindungsgemäße Aufnahmeplatte 2 mit vertieft angeordneten Aufnahmevorrichtungen; und3 shows a receiving plate 2 according to the invention with recessed receiving devices; and
Fig. 4 eine erfindungsgemäße Aufnahmeplatte mit hervorstehen- den Positionierstiften 5 zur räumlichen Fixierung der4 shows a receiving plate according to the invention with protruding positioning pins 5 for the spatial fixing of the
Substrate 3 und Auflagestiften 1 zur elektrischen Kon- taktierung.Substrates 3 and support pins 1 for electrical contacting.
Bei dem erfindungsgemäßen Plasmaboot entsprechend Fig. 3, 4 sind die Aufnahmeplatten 2 horizontal oder nur mit geringer Neigung angeordnet .3, 4, the mounting plates 2 are arranged horizontally or only with a slight inclination.
Die Substrate 3 liegen auf der Aufnahmeplatte 2 durch Schwerkraft auf. Um die nötige räumliche Fixierung zu erreichen, sind Aufnahmevorrichtungen 6 vorgesehen, die nach Fig. 3 aus in die Aufnahmeplatte 2 eingefrästen Vertiefungen 4 besteht. Die Vertiefungen 4 entsprechen in ihrer Größe den Abmessungen der Substrate 3, d.h. die Vertiefungen 4 sind geringfügig größer, als die Substrate 3, um diese leicht einlegen zu können.The substrates 3 lie on the mounting plate 2 by gravity. In order to achieve the necessary spatial fixation, receiving devices 6 are provided, which according to FIG. 3 consist of recesses 4 milled into the receiving plate 2. The size of the depressions 4 corresponds to the dimensions of the substrates 3, i.e. the depressions 4 are slightly larger than the substrates 3 in order to be able to insert them easily.
Weiterhin befinden sich in der Vertiefung 4 drei Auflagestifte 1 als Dreipunktauflage zur Unterstützung der Substrate und zu deren elektrischen Kontaktierung.Furthermore, there are three support pins 1 in the recess 4 as a three-point support for supporting the substrates and for their electrical contacting.
Fig. 4 zeigt eine Variante der Erfindung, bei der die Auf- nahmevorrichtung 6 durch Positionierstifte 5 gebildet wird, die paarweise angeordnet sind und welche die Substrate 3 an diametral gegenüberliegenden Ecken fixieren. Die Unterstützung und elektrische Kontaktierung der Substrate erfolgt auch hier durch Auflagestifte 1.4 shows a variant of the invention in which the device 6 is formed by positioning pins 5, which are arranged in pairs and which fix the substrates 3 at diametrically opposite corners. The support and electrical contacting of the substrates is also carried out here by support pins 1.
Diese Anordnungen haben den Vorteil, dass die Funktionen "in Position halten" und "elektrische Kontaktierung" getrennt sind. Die Substrate 3 werden durch die Wände der Vertiefungen 4 (Ta- sehe) oder die Positionierstifte 5 in Position gehalten. Die Abmessungen der Vertiefung 4 bzw. die Position der Positionierstifte 5 können so gewählt werden, dass beim Bestücken eine Lagetoleranz von +/- 1 mm zugelassen werden kann, wohingegen bei dem bisher bekannten Boot die Substrate auf der Auf- nahmeplatte gleitend bis zur Berührung mit den Befestigungsknöpfen an diese herängeschoben werden müssen.These arrangements have the advantage that the "hold in position" and "electrical contacting" functions are separate. The substrates 3 are held in position by the walls of the depressions 4 (see see) or the positioning pins 5. The dimensions of the recess 4 or the position of the positioning pins 5 can be selected such that a position tolerance of +/- 1 mm can be permitted when loading, whereas in the case of the boat known hitherto, the substrates on the mounting plate slide up to the point of contact the fastening buttons must be pushed towards them.
Bei der Kontaktierung muss darauf geachtet werden, dass diese unverändert bleibt, auch wenn die Substrate nicht exakt eben sind, oder sich unter dem Einfluss der Prozesstemperatur verbiegen. Aus diesem Grund bilden die Auflagestifte 1 eine Dreipunktauflage, die eine immer gleichbleibende Kontaktierung und daher eine homogene Beschichtung im Plasmaboot gewährleisten.When contacting, care must be taken to ensure that it remains unchanged, even if the substrates are not exactly flat or bend under the influence of the process temperature. For this reason, the support pins 1 form a three-point support, which ensure constant contact and therefore a homogeneous coating in the plasma boat.
Durch die Lage der Auflagepunkte einige Millimeter vom Rand der Substrate entfernt, wird sichergestellt, dass die Auflagestifte 1 nicht beschichtet werden und dass die Kontaktierung durch die Beschichtungen nicht verändert wird.The location of the support points a few millimeters from the edge of the substrates ensures that the support pins 1 are not coated and that the contacting is not changed by the coatings.
Eine Abschattung der Substratoberfläche tritt nicht auf, so dass eine Fleckenbildung vermieden wird.Shading of the substrate surface does not occur, so that staining is avoided.
Um weiterhin eine einfache Handhabung und Bestückung des Plasmabootes zu erreichen, sind die einzelnen Aufnahmeplatten 2 stapelbar ausgeführt. PlasmabootIn order to continue to achieve simple handling and equipping of the plasma boat, the individual mounting plates 2 are designed to be stackable. plasma boat
BezugszeichenlisteLIST OF REFERENCE NUMBERS
Auflagestift Aufnahmeplatte Substrat Vertiefung Positionierstift Aufnahmevorrichtung HF-Generator Befestigungsknopf Stopp-Stift Support pin Mounting plate Substrate recess Positioning pin Mounting device HF generator Fastening button Stop pin

Claims

PlasmabootPatentansprüche Plasma boat patent claims
1. Plasmaboot zur Aufnahme von plattenförmigen Substraten, wie Solarzellen und zur Behandlung derselben in einer Bearbeitungseinrichtung, wie z.B. einer Plasma-CVD-Anlage (PECVD) o.dgl., bestehend aus einer Vielzahl zueinander paralleler Aufnahmeplatten zur Aufnahme und Fixierung der Substrate während der .Behandlung, wobei die Aufnahmeplatten gegeneinander isoliert wechselweise mit den Ausgängen eines Hochfrequenz-Generators (HF-Generator) verbunden sind,, da- durch gekennzeichnet, dass die Substrate (3) durch Schwerkraft auf den Aufnahmeplatten (2) im wesentlichen horizontal liegend dreidimensional fixiert sind.1. Plasma boat for receiving plate-shaped substrates, such as solar cells, and for treating them in a processing device, such as e.g. a plasma CVD system (PECVD) or the like, consisting of a plurality of mutually parallel receiving plates for receiving and fixing the substrates during the treatment, the receiving plates being isolated from one another alternately with the outputs of a high-frequency generator (HF generator) are connected, characterized in that the substrates (3) are fixed in a three-dimensionally horizontal manner by gravity on the mounting plates (2).
2. Plasmaboot nach Anspruch 1, dadurch gekennzeichnet, dass die Aufnahmeplatten (2) des Plasmabootes (6) abstandsweise übereinanderliegend horizontal oder leicht schräg ausgerichtet sind.2. Plasma boat according to claim 1, characterized in that the receiving plates (2) of the plasma boat (6) are spaced horizontally or slightly obliquely one above the other.
3. Plasmaboot nach Anspruch 1 und 2, dadurch gekennzeichnet, dass die Aufnahmeplatten (2) mit Aufnahmevorrichtungen (6) für die Substrate (3) versehen sind, die diese einerseits eine räumlich fixieren und andererseits eine elektrische Kontaktierung der Substrate (3) realisieren.3. Plasma boat according to claim 1 and 2, characterized in that the receiving plates (2) are provided with receiving devices (6) for the substrates (3) which on the one hand fix them spatially and on the other hand realize electrical contacting of the substrates (3).
4. Plasmaboot nach Anspruch 3, dadurch gekennzeichnet, dass für die elektrische Kontaktierung der Substrate in der Aufnahmevorrichtung (6) eine Dreipunktauflage vorgesehen ist.4. Plasma boat according to claim 3, characterized in that a three-point support is provided for the electrical contacting of the substrates in the receiving device (6).
5. Plasmaboot nach Anspruch 4, dadurch gekennzeichnet, dass innerhalb der Aufnahmevorrichtung (6) drei Auflagestifte (1) ein gedachtes Dreieck umgrenzend in geringem Abstand zum Rand der Auf ahmevorrichtung (6) hervorstehen.5. Plasma boat according to claim 4, characterized in that within the receiving device (6) three support pins (1) protruding a triangle delimiting a short distance from the edge of the recording device (6).
6. Plasmaboot nach Anspruch 5, dadurch gekennzeichnet, dass die Auflagestifte (1) in die Aufnahmeplatten (2) eingesetzt sind.6. Plasma boat according to claim 5, characterized in that the support pins (1) are inserted into the receiving plates (2).
7. Plasmaboot nach Anspruch 5, dadurch gekennzeichnet, dass die Auflagestifte (1) mit den Aufnahmeplatten (2) einstü- ckig verbunden sind.7. Plasma boat according to claim 5, characterized in that the support pins (1) with the receiving plates (2) are integrally connected.
8. Plasmaboot nach einem der Ansprüche 1 bis 7, dadurch gekennzeichnet, dass die Aufnahmevorrichtung (6) aus einer in die Aufnahmeplatte (2) eingearbeiteten Vertiefung (4) be- steht .8. Plasma boat according to one of claims 1 to 7, characterized in that the receiving device (6) consists of a recess (4) worked into the receiving plate (2).
9. Plasmaboot nach Anspruch 8, dadurch gekennzeichnet, dass der Umriss der Vertiefung (4) dem Umriss der zu "fixierenden Substrate (3) entspricht.9. plasma boat according to claim 8, characterized in that the outline of the recess (4) corresponds to the outline of the substrates to be "fixed (3).
10. Plasmaboot nach einem der Ansprüche 1 bis 9, dadurch gekennzeichnet, dass die Auflagestifte (1) innerhalb der Vertiefung (4) angeordnet sind.10. Plasma boat according to one of claims 1 to 9, characterized in that the support pins (1) are arranged within the recess (4).
11. Plasmaboot nach Anspruch 10, dadurch gekennzeichnet, dass die Auflagestifte (1) in einem Abstand zum Umgrenzungsrand der Vertiefung (4) angeordnet sind und unterhalb der Plattenoberfläche der Aufnahmeplatte (2) enden.11. Plasma boat according to claim 10, characterized in that the support pins (1) are arranged at a distance from the boundary edge of the depression (4) and end below the plate surface of the receiving plate (2).
12. Plasmaboot nach einem der Ansprüche 1 bis 11, dadurch gekennzeichnet, dass die Auflagestifte (1) und die Vertiefung (4) in einem Arbeitsgang durch Fräsen hergestellt sind.12. Plasma boat according to one of claims 1 to 11, characterized in that the support pins (1) and the recess (4) are produced in one operation by milling.
13. Plasmaboot nach einem, der Ansprüche 1 bis 7, dadurch ge- kennzeichnet, dass die Aufnahmevorrichtung (6) durch mit der Aufnahmeplatte (2) verbundene und aus dieser hervorstehende Positionierstifte (5) realisiert ist, wobei jeweils ein Positionierstiftpaar (5) beidseits einer Ecke des zu fixierenden Substrates (3) angeordnet sind.13. Plasma boat according to one of claims 1 to 7, character- ized in that the receiving device (6) by with Positioning pins (5) connected to the receiving plate (2) and protruding therefrom are realized, a pair of positioning pins (5) being arranged on both sides of a corner of the substrate (3) to be fixed.
14. Plasmaboot nach Anspruch 13, dadurch gekennzeichnet, dass wenigstens zwei Positionierstiftpaare (5, 5') vorgesehen sind, die an zwei diametral gegenüberliegenden Ecken des Substrates (3) aus den Aufnahmeplatten (2) hervorstehen.14. Plasma boat according to claim 13, characterized in that at least two pairs of positioning pins (5, 5 ') are provided which protrude from the mounting plates (2) at two diametrically opposite corners of the substrate (3).
15. Plasmaboot nach Anspruch 13 und 14, dadurch gekennzeichnet, dass die Auflagestifte (1) innerhalb der durch die Positionierstifte (5, 5') umgrenzten Fläche aus der Aufnahmeplatte (2) hervorstehen.15. Plasma boat according to claim 13 and 14, characterized in that the support pins (1) protrude from the mounting plate (2) within the area delimited by the positioning pins (5, 5 ').
16. Plasmaboot nach einem der Ansprüche 1 bis 15, dadurch gekennzeichnet, dass die Aufnahmeplatten (2) aus einem leitfähigen, temperaturbeständigen Material bestehen, das gegen die in der PCVD-Anlage eingesetzten Prozeßgase inert ist.16. Plasma boat according to one of claims 1 to 15, characterized in that the receiving plates (2) consist of a conductive, temperature-resistant material which is inert to the process gases used in the PCVD system.
17. Plasmaboot nach Anspruch 16, dadurch gekennzeichnet, dass die Aufnahmeplatten (2) aus Graphit bestehen.17. Plasma boat according to claim 16, characterized in that the receiving plates (2) consist of graphite.
18. Plasmaboot nach einem der Ansprüche 1 bis 17, dadurch ge- kennzeichnet, dass die Auflagestifte (1) in einem geringen18. Plasma boat according to one of claims 1 to 17, characterized in that the support pins (1) in a small
Abstand zum Rand des Substrates (2) unterhalb desselben angeordnet sind.Distance to the edge of the substrate (2) are arranged below the same.
19. Plasmaboot nach einem der Ansprüche 1 bis 18, dadurch ge- kennzeichnet, dass die Aufnahmeplatten (2) stapelbar sind. 19. Plasma boat according to one of claims 1 to 18, characterized in that the receiving plates (2) are stackable.
PCT/DE2001/003388 2000-09-08 2001-08-29 Plasma boat WO2002020871A1 (en)

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DE10044644 2000-09-08
DE10044644.2 2000-09-08

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DE10260645B3 (en) * 2002-12-23 2004-09-16 Infineon Technologies Ag Compensation frame for holding substrate for semiconducting manufacture has polygonal inner profile for holding substrate, area of upper main surface of frame with different widths at different points
WO2008104596A1 (en) 2007-02-28 2008-09-04 Q-Cells Se Carrier system and method for processing a plurality of substrates fixed to the carrier system
DE102008019023A1 (en) * 2007-10-22 2009-04-23 Centrotherm Photovoltaics Ag Vacuum continuous flow system for the processing of substrates
WO2011069687A1 (en) 2009-12-11 2011-06-16 Kgt Graphit Technologie Gmbh Substrate support
CN103173737A (en) * 2011-12-23 2013-06-26 上海硅酸盐研究所中试基地 Silicon carbide chemical vapor-phase epitaxy stage device
KR20140037226A (en) 2011-09-26 2014-03-26 시마쯔 코포레이션 Plasma film forming apparatus
WO2015117991A1 (en) * 2014-02-06 2015-08-13 Kgt Graphit Technologie Gmbh Protective layer for pecvd graphite boats
WO2017005253A1 (en) * 2015-07-09 2017-01-12 Hanwha Q Cells Gmbh Device for receiving substrates in pairs
DE102018109738B3 (en) 2018-04-23 2019-10-24 Hanwha Q Cells Gmbh Holding device for wafers, method for tempering a holding device and apparatus for the treatment of wafers
FR3104175A1 (en) * 2019-12-06 2021-06-11 Commissariat A L'energie Atomique Et Aux Energies Alternatives BASKET FOR CHEMICAL DEPOSIT DEVICE IN STEAM ASSISTED BY PLASMA
CN115094401A (en) * 2022-03-31 2022-09-23 深圳市石金科技股份有限公司 Graphite boat suitable for conductive film deposition

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NL1025104C2 (en) * 2002-12-23 2005-10-25 Infineon Technologies Ag Compensation framework for recording a substrate.
DE10260645B3 (en) * 2002-12-23 2004-09-16 Infineon Technologies Ag Compensation frame for holding substrate for semiconducting manufacture has polygonal inner profile for holding substrate, area of upper main surface of frame with different widths at different points
WO2008104596A1 (en) 2007-02-28 2008-09-04 Q-Cells Se Carrier system and method for processing a plurality of substrates fixed to the carrier system
DE102008019023A1 (en) * 2007-10-22 2009-04-23 Centrotherm Photovoltaics Ag Vacuum continuous flow system for the processing of substrates
DE102008019023B4 (en) * 2007-10-22 2009-09-24 Centrotherm Photovoltaics Ag Vacuum continuous flow system for the processing of substrates
EP2053649A3 (en) * 2007-10-22 2011-11-09 Centrotherm Photovoltaics AG Vacuum continuous line to process substrates
US9228256B2 (en) 2009-12-11 2016-01-05 Kgt Graphit Technologie Gmbh Substrate support
WO2011069687A1 (en) 2009-12-11 2011-06-16 Kgt Graphit Technologie Gmbh Substrate support
DE102010029341A1 (en) 2009-12-11 2011-07-21 KGT GRAPHIT TECHNOLOGIE GmbH, 53578 substrate carrier
KR20140037226A (en) 2011-09-26 2014-03-26 시마쯔 코포레이션 Plasma film forming apparatus
CN103173737A (en) * 2011-12-23 2013-06-26 上海硅酸盐研究所中试基地 Silicon carbide chemical vapor-phase epitaxy stage device
WO2015117991A1 (en) * 2014-02-06 2015-08-13 Kgt Graphit Technologie Gmbh Protective layer for pecvd graphite boats
US10151030B2 (en) 2014-02-06 2018-12-11 Kgt Graphit Technologie Gmbh Protective layer for PECVD graphite boats
WO2017005253A1 (en) * 2015-07-09 2017-01-12 Hanwha Q Cells Gmbh Device for receiving substrates in pairs
CN108368608A (en) * 2015-07-09 2018-08-03 韩华Qcells有限公司 Equipment for accommodating substrate in pairs
DE102018109738B3 (en) 2018-04-23 2019-10-24 Hanwha Q Cells Gmbh Holding device for wafers, method for tempering a holding device and apparatus for the treatment of wafers
FR3104175A1 (en) * 2019-12-06 2021-06-11 Commissariat A L'energie Atomique Et Aux Energies Alternatives BASKET FOR CHEMICAL DEPOSIT DEVICE IN STEAM ASSISTED BY PLASMA
CN115094401A (en) * 2022-03-31 2022-09-23 深圳市石金科技股份有限公司 Graphite boat suitable for conductive film deposition
CN115094401B (en) * 2022-03-31 2024-03-01 深圳市石金科技股份有限公司 Graphite boat suitable for conductive film deposition

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