TWI485411B - Current sensor substrate and current sensor - Google Patents

Current sensor substrate and current sensor Download PDF

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Publication number
TWI485411B
TWI485411B TW101125454A TW101125454A TWI485411B TW I485411 B TWI485411 B TW I485411B TW 101125454 A TW101125454 A TW 101125454A TW 101125454 A TW101125454 A TW 101125454A TW I485411 B TWI485411 B TW I485411B
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Taiwan
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support portion
current sensor
conversion element
disposed
magnetoelectric conversion
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TW101125454A
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TW201307865A (zh
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鈴木健治
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旭化成微電子股份有限公司
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/207—Constructional details independent of the type of device used
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Description

電流感測器用基板及電流感測器
本發明係關於一種電流感測器用基板及電流感測器，更詳細而言，係關於一種包含具有U字形電流路徑之一次導體之電流感測器用基板及電流感測器。
先前，作為測定導體中流動之電流之電流感測器，已知藉由測定電流流動而檢測於周圍產生之磁通之方法。例如，有於測定電流流動之一次導體附近配置磁電轉換元件之方法。
於圖1(與專利文獻1的圖7對應)顯示先前之電流感測器的一例。於導電性夾片204上形成U字形的電流導體部204a，並將霍爾元件208配置於該U字形的內側。由於U字形內側的中心附近磁通密度較高，因此測定感度會提高。
[先前技術文獻] [專利文獻]
[專利文獻1]國際公開第2006/130393號手冊
然而，圖1揭示之電流感測器需要另行設置導電性夾片204而與引線端子202a~202d耦合等，製造上花費功夫，招致成本增加。
本發明係鑒於此種問題點而完成者，其第1目的在於在包含具有U字形電流路徑之一次導體之電流感測器中降低 製造成本。又，第2目的在於提供一種該電流感測器用的基板。
為達成此種目的，本發明第1態様之電流感測器用基板，其特徵為包含：具有供被測定電流流動之U字形電流路徑之一次導體、配置於前述U字形開口部且用以支撐磁電轉換元件之支撐部、及連接於前述支撐部之引線端子，且前述支撐部不與前述U字形電流路徑電性連接。
又，可行的是，本發明之第2態様係在第1態様中，前述一次導體含有連接於前述U字形電流路徑之一次導體端子，且前述一次導體端子在與前述電流路徑的前述U字形開口方向反方向上延伸，前述引線端子在與前述一次導體端子延伸之方向反方向上延伸。
又，可行的是，本發明之第3態様係在第1或第2態様中，前述電流感測器用基板的前述支撐部具有：配置於前述U字形的前述開口部之第1支撐部；及鄰接於前述第1支撐部，而未配置於前述開口部之第2支撐部。
又，可行的是，本發明第4態様之電流感測器，其特徵為包含：如第1至3中任一態様之電流感測器用基板；及配置於前述電流感測器用基板的前述支撐部，且包含檢測自在前述電流感測器用基板的前述電流路徑中流動之電流所產生之磁通之磁電轉換元件之IC晶片，且前述磁電轉換元件在俯視下配置於前述電流路徑的前述U字形之內側。
又，可行的是，本發明之第5態様係在第3態様中，前述 磁電轉換元件接近前述電流路徑的前述U字形之角落部而配置。
又，可行的是，本發明第6態様之電流感測器，其特徵為包含：如第3態様之電流感測器用基板；配置於前述電流感測器用基板的前述第1支撐部，且檢測自在前述電流感測器用基板的前述電流路徑中流動之電流所產生之磁通之磁電轉換元件、及配置於前述電流感測器用基板的前述第2支撐部，用以處理來自前述磁電轉換元件的輸出信號之IC晶片，且前述磁電轉換元件係在俯視下配置於前述電流路徑的前述U字形之內側之化合物半導體磁性感測器。
可行的是，本發明之第7態様係在第4至6中任一態様中，前述磁電轉換元件為霍爾元件。
可行的是，本發明之第8態様係在第4至7中任一態様中，於前述電流感測器用基板的前述支撐部中設置有階差，前述磁電轉換元件的感磁面以與前述一次導體的高度大致相等之方式設置。
可行的是，本發明之第9態様係在第4至7中任一態様中，於前述電流感測器用基板的前述支撐部中設置有階差，且前述階差的大小係將前述磁電轉換元件的厚度設為t1、前述1次導體的厚度設為t2時大於0而小於2×t1+t2之值，前述階差係使前述磁電轉換元件的感磁面之高度降低之方向的階差。
根據本發明，可使電流感測器用基板及電流感測器的構 成為抑制零件個數之簡便者，從而降低製造成本。
以下，參照圖式詳細地說明本發明的實施形態。
(第1實施形態)
於圖2顯示第1實施形態之電流感測器。電流感測器200具備：具有U字形電流路徑210A及一次導體端子210B之一次導體210；具有用以支撐霍爾元件等之磁電轉換元件230A之支撐部220A、及引線端子220B_1、220B_2之信號端子側構件220(以下，簡略記為「構件220」。)；及配置於支撐部220A之具有檢測自在電流路徑210A中流動之電流產生之磁通之磁電轉換元件230A之IC晶片230。將一次導體210、構件220、及IC晶片230以樹脂240鑄模，而形成電流感測器200。除去IC晶片230及樹脂240之部分為電流感測器用基板。
引線端子220B_1表示連接於支撐部220A之引線端子，引線端子220B_2表示未連接於支撐部220A之引線端子。另，在對引線端子220B_1、220B_2共通之說明中，各引線端子只作為引線端子220B而參照。
支撐部220A未電性連接於被測定電流流動之U字形電流路徑210A上，藉由如此構成，可確保一次導體210與IC晶片230之間的高絕緣耐壓。
電流路徑210A的U字形在與一次導體端子210B_1延伸之方向反方向上具有開口部210C，構件220的支撐部220A配置於該開口部210C。且，構件220的引線端子220B_1在與 一次導體端子210B延伸之方向反方向上延伸。
支撐部220A與引線端子220B_1並非個別的構件，而是以金屬材料一體形成。即，支撐部220A與引線端子220B_1物理上成為一體，且亦物理上電性連接。
如上述般，由於U字形內側的中心附近磁通密度較高因而測定感度提高，因此，磁電轉換元件230A在俯視下配置於電流路徑210A的U字形之內側。特別是，由於在電流路徑210A的U字形之角落部210A'中磁通密度較高，因此較佳為接近角落部210A'而配置磁電轉換元件230A。
在本實施形態之電流感測器200中，分離一次導體210與構件220，使配置於構件220的支撐部220A之IC晶片230與一次導體210的電流路徑210A不接觸，而於兩者之間獲得間隙。該間隙可保證一次導體210與IC晶片230之間的絕緣，從而維持封裝內部之高耐壓。
此外，藉由構件220的引線端子220B_1在與一次導體端子210B延伸之方向反方向上延伸，在樹脂240的外周可確保絕緣所需的沿面距離，且耐壓提高。若採用一次導體端子210B與引線端子220B_1自樹脂240的同一端面引出之構成，則兩者會在封裝外部鄰接，而難以確保充分的沿面距離。
如此般，第1實施形態之電流感測器200較先前更抑制零件個數，且製造成本降低，除此以外，可謀求耐壓提高。
(第2實施形態)
於圖3顯示第2實施形態之電流感測器。電流感測器300 與第1實施形態的電流感測器200不同點在於，霍爾元件等之磁電轉換元件330A不包含於IC晶片330中，而另行設置。
支撐部220A具有：配置於U字形開口部210C之第1支撐部220A'；及與第1支撐部220A'鄰接，而未配置於開口部210C之第2支撐部220A"。於第1支撐部220A'配置檢測自在電流路徑210A流動之電流產生之磁通之磁電轉換元件330A，於第2支撐部220A"配置用以處理來自磁電轉換元件330A的輸出信號之IC晶片330。磁電轉換元件330A在俯視下配置於電流路徑210A的U字形之內側。
本實施形態之電流感測器300分為：僅配置磁電轉換元件330A，而配置於電流路徑210A的開口部210C之第1支撐部220A'；及配置信號處理用之IC晶片330，而不配置於開口部210C之第2支撐部220A"，且作為磁電轉換元件330A，使用InSb、InAs、GaAs等之感度高的化合物半導體磁性感測器。藉此，可使在電流路徑210A流動之電流的測定感度提高。
此外，由於有必要配置於開口部210C的並非IC晶片330，而僅為磁電轉換元件330A，因此可縮小U字形電流路徑210A，且縮短全長。若電流路徑210A小型化，則U字形的內側之磁場集中提高，而可獲得電流的檢測感度提高。
又，電流路徑210A雖因相較於一次導體210的其他部分較細，且電阻較高而發熱集中，但藉由本實施形態之小型 化，電流路徑210A的長度縮短，從而發熱量會降低。
又，作為U字形電流路徑的一形態，對電流路徑210A，亦可使用例如C字形、V字形、或與該等類似之形狀的電流路徑。
此處，參照圖4A、圖4B及圖5A~5C，說明第2實施形態之電流感測器300的製造方法。關於第1實施形態亦相同。首先，由一片金屬板製作形成有所期望的圖案之引線框架。圖4A顯示與一個電流感測器對應之一部分。接著，將磁電轉換元件330A晶粒接合於第1支撐部220A'，將IC晶片330晶粒接合於第2支撐部220A"之後，進行打線接合(圖4B)。最後，將一次導體210、構件220、及IC晶片330以樹脂240鑄模，並進行引線切割，而利用成形加工形成高電壓側的一次導體端子210B及低電壓側的引線端子(信號端子)220B_1、220B_2。
圖5A係俯視圖，圖5B係前視圖，圖5C係右側視圖。
接著，參照圖6及圖7說明圖3所示之電流感測器300之一次導體210與磁電轉換元件330A之位置關係。圖6係顯示第2實施形態之電流感測器中一次導體210與磁電轉換元件330A之位置關係之立體圖。圖7係顯示圖6之電流感測器300中A-A'剖面之圖。
圖6所示之磁電轉換元件330A具有感磁面331，該感磁面331係以與一次導體210的高度大致相等之方式設置。在本實施形態中，如圖7所示般，利用例如半邊加工等之技術，於第1支撐部220A'中設置有階差，且於該第1支撐部 220A'的露出部設置磁電轉換元件330A。藉此，因一次導體210中流動之電流而產生之磁通以於相對感磁面331垂直方向上通過之方式產生。因此，磁電轉換元件330A的感磁面331之磁通密度較高，而電流感測器300的測定感度提高。
更具體而言，較佳的是，階差的大小為將磁電轉換元件的厚度設為t1、1次導體的厚度設為t2之時大於0而小於2×t1+t2之值。特別是，若以使感磁面331的高度等於一次導體210的厚度中心之高度之方式設置階差，則磁電轉換元件330A的感磁面331之磁通密度最高，而電流感測器300的測定感度提高。
另，作為於支撐部設置階差之技術，並非限定於半邊加工，除此以外，亦可應用利用壓印加工進行精壓而機械性薄化之方法或彎曲加工等之方法。
200‧‧‧電流感測器
210‧‧‧一次導體
210A‧‧‧電流路徑
210B‧‧‧一次導體端子
210C‧‧‧開口部
220‧‧‧信號端子側構件
220A‧‧‧支撐部
220A'‧‧‧第1支撐部
220A"‧‧‧第2支撐部
220B‧‧‧引線端子
220B_1‧‧‧引線端子
220B_2‧‧‧引線端子
230‧‧‧IC晶片
230A‧‧‧磁電轉換元件
240‧‧‧樹脂
330‧‧‧IC晶片
330A‧‧‧磁電轉換元件
圖1係顯示先前之電流感測器之圖。
圖2係顯示第1實施形態之電流感測器之圖。
圖3係顯示第2實施形態之電流感測器之圖。
圖4A係用以說明第2實施形態之電流感測器的製造方法之圖。
圖4B係用以說明第2實施形態之電流感測器的製造方法之圖。
圖5A係用以說明第2實施形態之電流感測器的製造方法之圖。
圖5B係用以說明第2實施形態之電流感測器的製造方法之圖。
圖5C係用以說明第2實施形態之電流感測器的製造方法之圖。
圖6係顯示第2實施形態之電流感測器中一次導體與磁電轉換元件的位置關係之立體圖。
圖7係顯示圖6之電流感測器中A-A'剖面之圖。
200‧‧‧電流感測器
210‧‧‧一次導體
210A‧‧‧電流路徑
210B‧‧‧一次導體端子
210C‧‧‧開口部
220‧‧‧信號端子側構件
220A‧‧‧支撐部
220B_1‧‧‧引線端子
220B_2‧‧‧引線端子
230‧‧‧IC晶片
230A‧‧‧磁電轉換元件
240‧‧‧樹脂

Claims (10)

  1. 一種電流感測器，其特徵為包含：一次導體，其包含供被測定電流流動之U字形之電流路徑；支撐部，其配置於前述U字形之開口部且支撐磁電轉換元件；磁電轉換元件，其配置於前述支撐部且檢測自前述被測定電流產生的磁束；及連接於前述支撐部之引線端子；且前述支撐部不與包含前述U字形之電流路徑的一次導體電性連接。
  2. 如請求項1之電流感測器，其中前述一次導體包含連接於前述U字形之電流路徑之一次導體端子；前述一次導體端子在與前述電流路徑的前述U字形之開口方向為相反之方向上延伸；前述引線端子在與前述一次導體端子延伸之方向為相反之方向上延伸。
  3. 如請求項1或2之電流感測器，其中前述支撐部包含：配置於前述U字形的前述開口部之第1支撐部；及鄰接於前述第1支撐部，而未配置於前述開口部之第2支撐部。
  4. 如請求項1或2之電流感測器，其中於前述支撐部，配置有包含前述磁電轉換元件之IC晶片； 前述磁電轉換元件在俯視下係配置於前述電流路徑的前述U字形之內側。
  5. 如請求項4之電流感測器，其中前述磁電轉換元件係接近前述電流路徑的前述U字形之角落部而配置。
  6. 如請求項3之電流感測器，其中前述磁電轉換元件係配置於前述第1支撐部；該電流感測器包含IC晶片，其配置於前述第2支撐部，用以處理來自前述磁電轉換元件的輸出信號；且前述磁電轉換元件係在俯視下配置於前述電流路徑的前述U字形之內側之化合物半導體磁性感測器。
  7. 如請求項1之電流感測器，其中前述磁電轉換元件係霍爾元件。
  8. 如請求項1或2之電流感測器，其中於前述支撐部設置有階差；且前述磁電轉換元件係以前述磁電轉換元件的感磁面與前述一次導體的高度大致相等之方式，設置於藉由前述支撐部之前述階差形成的露出部。
  9. 如請求項1或2之電流感測器，其中於前述支撐部設置有階差，且前述階差的大小係將前述磁電轉換元件的厚度設為t1、前述1次導體的厚度設為t2時的大於0而小於2×t1+t2之值，前述階差係使前述磁電轉換元件的感磁面之高度降低之方向的階差。
  10. 一種電流感測器用基板，其特徵為包含：一次導體，其包含供被測定電流流動之U字形之電流 路徑；支撐部，其配置於前述U字形之開口部且支撐磁電轉換元件；及連接於前述支撐部之引線端子；前述支撐部包含：配置於前述U字形之前述開口部的第1支撐部；及鄰接於前述第1支撐部，而未配置於前述開口部的第2支撐部；且前述支撐部不與前述U字形之電流路徑電性連接。
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