TWI482318B - 發光二極體及其封裝結構 - Google Patents

發光二極體及其封裝結構 Download PDF

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TWI482318B
TWI482318B TW101148839A TW101148839A TWI482318B TW I482318 B TWI482318 B TW I482318B TW 101148839 A TW101148839 A TW 101148839A TW 101148839 A TW101148839 A TW 101148839A TW I482318 B TWI482318 B TW I482318B
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electrode
solid crystal
wafer
connection
substrate
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TW201427087A (zh
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Yau Tzu Jang
Yu Liang Huang
Wen Liang Tseng
Pin Chuan Chen
Lung Hsin Chen
Hsing Fen Lo
Chao Hsiung Chang
Che Hsang Huang
Yu Lun Hsieh
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Advanced Optoelectronic Tech
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Description

發光二極體及其封裝結構
本發明涉及一種發光器件，尤其係一種發光二極體及其封裝結構。
LED(發光二極體，Light-emitting diode)產業係近幾年最受矚目的產業之一，發展至今，LED產品已具有節能、省電、高效率、反應時間快、壽命週期時間長、且不含汞、具有環保效益等優點，因此被認為係新世代綠色節能照明的最佳光源。目前有LED採用集成多顆晶片的方式來提升出光強度。但係，由於現有的LED通常係僅採用一組電極來對晶片供電，因此限制了多顆晶片僅能通過串聯的方式連接，不利於多樣化的發光需求。
有鑒於此，有必要提供一種可同時實現多顆晶片並聯及串聯的發光二極體及其封裝結構。
一種封裝結構，包括基板以及形成於基板內並彼此分離的固晶電極、第一連接電極、第二連接電極，封裝結構用於安裝第一晶片及第二晶片，第一晶片的二電極分別連接至固晶電極及第一連接電極，第二晶片的一電極連接至第一連接電極，另一電極選擇性地直接或間接地連接至第二連接電極，從而實現第一晶片與第二 晶片之間的串聯或並聯。
一種包含上述的封裝結構的發光二極體，還包括：第一晶片、第二晶片以及封裝層，該第一晶片的二電極通過導線分別連接至固晶電極及第一連接電極，該第二晶片的一電極連接至第一連接電極，另一電極選擇性地直接或間接地連接至第二連接電極，從而實現第一晶片與第二晶片之間的串聯或並聯。
由於該封裝結構包括分離的固晶電極、第一連接電極與第二連接電極，因此多個晶片可以安裝於該固晶電極上，並選擇性地連接該固晶電極、第一連接電極與第二連接電極，從而方便地實現該多個晶片的串聯與並聯連接。有鑒於此，有必要提供一種薄型化發光二極體的製造方法。
10‧‧‧基板
101‧‧‧上表面
102‧‧‧下表面
20‧‧‧固晶電極
201‧‧‧第一固晶部
202‧‧‧第二固晶部
203、213‧‧‧凹槽
204‧‧‧平行段
205‧‧‧連接段
21‧‧‧第一連接電極
211‧‧‧第一部分
212‧‧‧第二部分
22‧‧‧第二連接電極
30‧‧‧反射杯
31‧‧‧分隔部
40‧‧‧導線
41‧‧‧第一晶片
42‧‧‧第二晶片
50‧‧‧封裝層
60‧‧‧齊納二極體
100‧‧‧封裝結構
200‧‧‧發光二極體
圖1係本發明發光二極體封裝結構的俯視示意圖。
圖2係本發明發光二極體封裝結構的仰視示意圖。
圖3係沿圖1的Ⅲ-Ⅲ線剖開的示意圖，其中一反射杯安裝於發光二極體封裝結構上。
圖4係沿圖1的Ⅳ-Ⅳ線剖開的示意圖，其中一反射杯安裝於發光二極體封裝結構上。
圖5係圖1的發光二極體封裝結構裝設二串聯晶片的示意圖。
圖6係圖5的電路原理圖。
圖7係圖1的發光二極體封裝結構裝設二並聯晶片的示意圖。
圖8係圖6的電路原理圖。
圖9係本發明第一實施例的發光二極體的示意圖。
圖10係本發明第二實施例的發光二極體的示意圖。
下面結合附圖對本發明作進一步的詳細說明。
請同時參閱圖1-4，本發明的發光二極體封裝結構100包括基板10以及彼此分離的固晶電極20、第一連接電極21、第二連接電極22。該基板10包括相對的上表面101與下表面102。該固晶電極20、第一連接電極21以及第二連接電極22的厚度與該基板10的厚度相等並且鑲嵌於該基板10中。也即係，該固晶電極20、第一連接電極21以及第二連接電極22的上下表面分別與該基板10的上下表面101、102齊平，且均外露於該基板10的上下表面101、102。該固晶電極20包括兩平行段204以及一連接該兩平行段204的連接段205。固晶電極20在基板10的下表面102呈現出一“凹”字形。該第一連接電極21位於對應於該固晶電極20的連接段205的位置處，並由該固晶電極20的“凹”字形圍設。該第二連接電極22設置於該固晶電極20的右側。在本實施例中，該固晶電極20佔據基板10的下表面102的80%以上的面積。該固晶電極20、第一連接電極21以及第二連接電極22均由導熱性能良好的金屬製成。
該固晶電極20包括一開設於其“凹”字形的連接段205上凹槽203。該凹槽203為盲槽。優選地，該凹槽203的開槽深度等於該固晶電極20的厚度的一半。該凹槽203將該固晶電極20的上半部分分隔為第一固晶部201與第二固晶部202。該基板10的上表面101露出分離設置的該第一固晶部201與該第二固晶部202。該第一連接電極21包括另一凹槽213。該凹槽213也為盲槽。優選地，該第一 連接電極21的凹槽213與該固晶電極20的凹槽203的開槽深度以及開槽寬度相同。該第一連接電極21的凹槽213位於該第一連接電極21的中間位置處且在位置上對齊該固晶電極20的凹槽203。該凹槽213將該第一連接電極21的上半部分分隔為第一部分211與第二部分212。該基板10的上表面101露出分離設置的該第一部分211與第二部分212。
該發光二極體封裝結構100還包括一反射杯30設置於該基板10的上表面101。該反射杯30覆蓋該固晶電極20、第一連接電極21以及第二連接電極22的外周邊。該反射杯30由例如環氧塑封材料(EMC)、矽模塑封化合物(SMC)等高分子反射材料製成。該反射杯30具有一高度低於反射杯30週邊本體的分隔部31，其設置於該基板10的對應於該固晶電極20的凹槽203與該第一連接電極21的凹槽213的位置處。該分隔部31將該封裝結構100分隔成左右兩個功能區。其中該左功能區外露出該第一固晶電極201與該第一連接電極21的第一部分211，該右功能區外露出該第二固晶電極202、該第一連接電極21的第二部分212與該第二連接電極22。可以理解地，該反射杯30可與該基板10由相同的高分子材料一體形成，並且二者共同組成一高分子層。
請同時參閱圖5-6，設置一第一晶片41於該第一固晶電極201上，設置一第二晶片42於該第二固晶電極202上。可選擇性地利用若干導線40將該第一晶片41電連接至該第一固晶電極201與該第一連接電極21的第一部分211，將該第二晶片42電連接至該第一連接電極21的第二部分212與該第二連接電極22。由於該第一連接電極21的第一部分211與第二部分212實際上係相連的，因此該第 一晶片41與該第二晶片42在該封裝結構100上實現了串聯連接。
請同時參閱圖7-8，設置一第一晶片41於該第一固晶電極201上，設置一第二晶片42於該第二固晶電極202上。可選擇性地利用若干導線40將該第一晶片41電連接至該第一固晶電極201與該第一連接電極21的第一部分211，將該第二晶片42電連接至該第一連接電極21的第二部分212與該第二固晶電極202，並將該第二固晶電極202電連接該第二連接電極22。由於該第一固晶電極201與該第二固晶電極202實際上係相連的，該第一連接電極21的第一部分211與第二部分212實際上也係相連的，因此該第一晶片41與該第二晶片42在該封裝結構100上實現了並聯連接。由此，通過不同的打線方式，本發明的發光二極體封裝結構100可方便地實現多個晶片41、42之間的串聯及並聯關係，可滿足不同的出光需求。
請參閱圖9，設置一封裝層50於該反射杯30內並覆蓋該第一晶片41與該第二晶片42形成一發光二極體200。該封裝層50由環氧樹脂、矽膠等透明材料製成。該封裝層50內還可摻雜有螢光粉。在本實施例中，該第一晶片41與該第二晶片42所發出的係白光光譜中的互補顏色的光束，因此該發光二極體200為白光二極體。
由於該固晶電極20導熱性能良好的金屬製成，並且又佔據了基板10的大部分面積，因此為設置於該固晶電極20上的第一晶片41與第二晶片42提供了良好的散熱環境，將該第一晶片41與該第二晶片42的熱量及時地傳遞到下表面散去，使得該發光二極體200具有更好的散熱效果。又由於該高分子層由環氧塑封材料(EMC)、矽模塑封化合物(SMC)等高分子反射材料製成，使得其反射杯 30與基板10的反射率達到93%以上，對該第一晶片41與該第二晶片42的出光具有良好的反射作用。
請再參閱圖10，該發光二極體200還包括一齊納二極體60。當該第一晶片41與該第二晶片42實施串聯方式連接時，該齊納二極體60可有選擇性地設置於該第一連接電極21的第一部分211或第二部分212上。由於該齊納二極體60設置於該第一連接電極21上而非固晶電極20或用於與外界電源電連接的第二連接電極22上，因此可以將該齊納二極體60作為防靜電裝置，對發光二極體200內的部件實施防靜電保護。
10‧‧‧基板
101‧‧‧上表面
20‧‧‧固晶電極
201‧‧‧第一固晶部
202‧‧‧第二固晶部
21‧‧‧第一連接電極
211‧‧‧第一部分
212‧‧‧第二部分
22‧‧‧第二連接電極
100‧‧‧封裝結構

Claims (8)

  1. 一種封裝結構，其改良在於：包括基板以及形成於基板內並彼此分離的固晶電極、第一連接電極、第二連接電極，封裝結構用於安裝第一晶片及第二晶片，第一晶片的二電極分別連接至固晶電極及第一連接電極，第二晶片的一電極連接至第一連接電極，另一電極選擇性地直接或間接地連接至第二連接電極，從而實現第一晶片與第二晶片之間的串聯或並聯，該基板包括相對的第一表面與第二表面，該固晶電極包括相連的第一固晶電極與第二固晶電極，該第一固晶電極與第二固晶電極相離地外露於該基板的第一表面，該第一固晶電極與該第二固晶電極相連地外露於該基板的第二表面，該第一晶片設置於該第一固晶電極，該第二晶片設置於該第二固晶電極，該第一連接電極包括相連的第一部分與第二部分，該第一連接電極的第一部分與第二部分相離地外露於該基板的第一表面，該第一連接電極的第一部分與第二部分相連地外露於該基板的第二表面。
  2. 如申請專利範圍第1項所述的封裝結構，其中：該固晶電極包括凹槽，該凹槽將該固晶電極靠近該基板的第一表面的部分分隔為該第一固晶電極與第二固晶電極。
  3. 如申請專利範圍第1項所述的封裝結構，其中：該第一連接電極包括另一凹槽，該另一凹槽將該第一連接電極靠近該基板的第一表面的部分分隔為該第一部分與該第二部分，該第一連接電極的另一凹槽在位置上對齊該固晶電極的凹槽。
  4. 如申請專利範圍第3項所述的封裝結構，其中：該封裝結構還包括反射杯，該反射杯包括本體與分隔部，該本體覆蓋該固晶電極、第一連接電極 以及第二連接電極的外周邊，該分隔部設置於該基板的對應於該固晶電極的凹槽與該第一連接電極的另一凹槽的位置處。
  5. 如申請專利範圍第1項所述的封裝結構，其中：該固晶電極由金屬製成並且佔據該基板80%以上的面積。
  6. 一種包含申請專利範圍第1至5項任一項的封裝結構的發光二極體，還包括：第一晶片、第二晶片以及封裝層，其改良在於：該第一晶片的二電極通過導線分別連接至固晶電極及第一連接電極，該第二晶片的一電極連接至第一連接電極，另一電極選擇性地直接或間接地連接至第二連接電極，從而實現第一晶片與第二晶片之間的串聯或並聯。
  7. 如申請專利範圍第6項所述的發光二極體，其中：該發光二極體還包括齊納二極體，該齊納二極體設置於該第一連接電極上。
  8. 如申請專利範圍第7項所述的發光二極體，其中：該第一晶片、第二晶片通過導線與固晶電極、第一連接電極與第二連接電極電連接。
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CN104716246B (zh) * 2013-12-17 2017-09-26 展晶科技(深圳)有限公司 光电元件封装结构及其制造方法
KR102606852B1 (ko) 2015-01-19 2023-11-29 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
TWI649900B (zh) * 2015-02-04 2019-02-01 億光電子工業股份有限公司 Ｌｅｄ封裝結構及其製造方法
JP6802620B2 (ja) * 2015-05-18 2020-12-16 スタンレー電気株式会社 半導体発光装置の製造方法及び半導体発光装置
WO2019006763A1 (en) * 2017-07-07 2019-01-10 Cree Hong Kong Limited RGB LED BOX WITH BSY TRANSMITTER
US10862015B2 (en) * 2018-03-08 2020-12-08 Samsung Electronics., Ltd. Semiconductor light emitting device package
CN111900184A (zh) 2020-09-02 2020-11-06 深圳市华星光电半导体显示技术有限公司 显示装置及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200929595A (en) * 2007-12-25 2009-07-01 Advanced Optoelectronic Tech Packaging structure of electro-optic device with ESD protection
US20100213475A1 (en) * 2006-02-23 2010-08-26 Won-Jin Son Light emitting diode package and method of manufacturing the same
TW201218359A (en) * 2010-10-28 2012-05-01 Advanced Optoelectronic Tech Light emitting diode package structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101859149B1 (ko) * 2011-04-14 2018-05-17 엘지이노텍 주식회사 발광 소자 패키지
JP5890233B2 (ja) * 2011-05-19 2016-03-22 ローム株式会社 Ｌｅｄモジュールおよびイメージセンサモジュール

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100213475A1 (en) * 2006-02-23 2010-08-26 Won-Jin Son Light emitting diode package and method of manufacturing the same
TW200929595A (en) * 2007-12-25 2009-07-01 Advanced Optoelectronic Tech Packaging structure of electro-optic device with ESD protection
TW201218359A (en) * 2010-10-28 2012-05-01 Advanced Optoelectronic Tech Light emitting diode package structure

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