200929595 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種具靜電保護之光電元件的封褒結構， 尤係關於具有靜電保護二極體之發光二極體或光敏二極體 的封裝元件。 【先前技術】 由於發光二極體（light emitting diode ; LED )元件有體 藝積小、發光效率高及壽命長等優點，因此被認為是次世代 綠色節能照明的最佳光源。另外液晶顯示器的快速發展及 全彩螢幕的流行趨勢，使白光系發光二極體元件除了應用 於指示燈及大型顯示幕等用途外，更切入廣大之消費性電 子產品’例如：手機及個人數位助理（PDA)。 目前白光發光二極體元件多係封裝氮化鎵藍色發光二極 體之晶粒而製成，然氮化鎵藍色二極體或氮化銦鎵藍綠光 —極體由於其P/N接面（junction)非常靠近表面，因此很容 ❹ 易遭受到靜電之破壞。特別是在乾燥的環境下，人體所帶 的靜電可能就累積至1〜2仟伏。若是帶靜電之人體不慎碰 觸發光一極體元件之接腳，即使電流小但仍可摧毀發光二 極體元件之電路。 為解決上述問題’習知技藝係將發光二極體元件中並聯 —齊納二極體（Zener diode)，來保護發光二極體晶粒免於遭 受靜電之破壞。圖1係典型發光二極體元件中發光二極體 並聯保護晶體之電路示意圖。在發光二極體元件1〇正常操 作電壓Vcc下，發光二極體！〗係處於順偏壓（f〇rward 200929595 )例如.5伏的操作電壓；而齊納二極體12係處於逆 偏壓(reVerse bias)，一般齊納二極冑12之崩潰電壓約為8 伏因此，當發光二極體元件10被施加正常操作電壓時， 月納一極體12因為未達崩潰電壓而無法導通。但若因為人 體所帶高達1〜2仟伏靜電被不經意導入發光二極體元件 之接腳時，將會使仔發光二極體11及齊納二極體12皆 處於導通之狀態’但幾乎所有之電流都會經過齊納二極體 ©12，從而保護發光二極體u之電路不被破壞。 為了完成上述發光二極體元件之並聯電路，有各種不同 之習知技術去實現，然都有其各別的缺點。圖2係美國第 6,〇54,716號專利所揭露之發光二極體元件剖面圖。發光二 極體元件20包含一固定於正極支架23之燈座底部231的 發光二極體21，另包含一固定於燈座頂部232之齊納二極 體22。齊納二極體22之N型電極221經由固晶膠乃與燈 座頂部232電性相連，其P型電極222則藉由金屬導線％ φ 和負極支架24電性相連。發光二極體21之P型電極212 係藉由金屬導線26與正極支架23電性相連，其n型電極 211則藉由金屬導線26和齊納二極體22之p型電極222 電性相連。 上述發光二極體元件20係一種針腳式封裝結構，不僅製 程上難度較高，且針腳需要與具穿孔之電路板配合，因此 會降低該電路板之佈線密度。 圖3係習知表面黏著式之發光二極體元件的剖面圖。發 光二極體元件30包含一殼體37、一穿設於殼體37之導線 200929595 八 發光二極體31及一齊納-極^ 包括位於相同高度之—Ν型二一 發光二極體 31 Μ 細 Ρ 及背納二極體32係分由 於Ν型雷炻郫μ η。 日由u日日勝35固定 尘電極.P 33及P型電極部％200929595 IX. Description of the Invention: [Technical Field] The present invention relates to a sealing structure of a photovoltaic element having electrostatic protection, in particular to a package of a light-emitting diode or a photosensitive diode having an electrostatic protection diode. element. [Prior Art] Light-emitting diode (LED) components are considered to be the best light source for next-generation green energy-saving lighting because of their small body size, high luminous efficiency and long life. In addition, the rapid development of liquid crystal displays and the trend of full-color screens make white light-emitting diode components not only be used for indicators and large display screens, but also into consumer electronics products such as mobile phones and personal digital devices. Assistant (PDA). At present, the white light emitting diode component is made by multi-packing the crystal grains of the gallium nitride blue light emitting diode, and the gallium nitride blue diode or the indium gallium nitride blue green light-polar body is P/ The junction of the N is very close to the surface, so it is easy to suffer from static electricity. Especially in a dry environment, the static electricity carried by the human body may accumulate to 1~2 volts. If the body with static electricity accidentally touches the pin of the light-emitting element, even if the current is small, the circuit of the light-emitting diode element can be destroyed. In order to solve the above problem, the conventional technique is to use a Zener diode in parallel in the light-emitting diode element to protect the light-emitting diode die from electrostatic damage. Fig. 1 is a circuit diagram showing a parallel protection crystal of a light-emitting diode in a typical light-emitting diode element. Under the normal operating voltage Vcc of the light-emitting diode element 1 , the light-emitting diode! The operating voltage is biased (f〇rward 200929595), for example, .5 volts; and Zener diode 12 is in reverse bias (reVerse bias), the breakdown voltage of the general Zener diode 12 is about 8 Therefore, when the light-emitting diode element 10 is applied with a normal operating voltage, the moon-and-pole body 12 cannot be turned on because it does not reach the breakdown voltage. However, if the electrostatic charge of the human body is as high as 1~2 volts, and the pin of the light-emitting diode element is inadvertently introduced, the illuminating diode 11 and the Zener diode 12 will be in a conducting state. All currents pass through the Zener diode ©12, protecting the circuit of the LEDs from damage. In order to complete the parallel circuit of the above-mentioned light-emitting diode elements, there are various conventional techniques to achieve, and each has its own disadvantages. Figure 2 is a cross-sectional view of a light-emitting diode element disclosed in U.S. Patent No. 6,54,716. The light-emitting diode element 20 includes a light-emitting diode 21 fixed to the bottom 231 of the base of the positive electrode holder 23, and a Zener diode 22 fixed to the top 232 of the base. The N-type electrode 221 of the Zener diode 22 is electrically connected to the lamp holder top 232 via a die bond, and the P-type electrode 222 is electrically connected to the negative electrode holder 24 by a metal wire % φ. The P-type electrode 212 of the LED 21 is electrically connected to the positive electrode holder 23 by a metal wire 26, and the n-type electrode 211 is electrically connected to the p-type electrode 222 of the Zener diode 22 by a metal wire 26. . The above-mentioned light-emitting diode element 20 is a pin-type package structure, which is not only difficult in the process, but also needs to be matched with a circuit board having a perforation, thereby reducing the wiring density of the circuit board. 3 is a cross-sectional view of a conventional surface-adhesive light-emitting diode element. The light-emitting diode element 30 includes a casing 37, a wire penetrating through the casing 37, 200929595, eight light-emitting diodes 31, and a Zener-pole, including a two-in-one light-emitting diode 31 at the same height. The fine Ρ and the dorsal diode 32 series are due to the 炻郫 type Thunder μ η. Day is fixed by u Risheng 35. Dust electrode. P 33 and P type electrode part%
型電極藉由金屬導先-極體31之N 刑雷技雜丄 ，、以孓電極部33電性相連，盆p 金屬導線36與P型電極部34 、 二極體32，\Γ f相連。齊納 :體32 ^型電極係藉由金屬導 電性相連》 主电極部33The electrode is electrically connected to the ytterbium electrode portion 33 by the N-trapping technique of the metal lead-electrode body 31, and the pot p-metal wire 36 is connected to the P-type electrode portion 34, the diode 32, and the Γ f . Zener: The body 32 ^ type electrode is connected by metal conduction" main electrode portion 33
:封止層39係填充於殼體37内，並可 :出之光線透射過。由於發光二極體31及齊納二極體體」 録於同—高度，因此發光二極體31發出之光線會被旁邊 極體32影響或遮擋。尤其是齊納二極體32是接 =色的，對於光線有吸收之作用，從而降低透射過封止 $之先線。此外，金屬導線36係以焊線（wWg) 製程完成’因此需要產生金屬導線36形狀之製程空間。但 由於發光二極體31及齊納二極體32係位於同—高度，故 造成焊線製程空間受到侷限。 又 【發明内容】 的封裝結構， 而使得光電元 本發明係提供一種具靜電保護之光電元件 藉由將靜電保護晶粒固定於導線架之凹處， 件之發光效率提昇。 本發月係提#種具靜電保護之光電元件的封裝結構 其中光電二極體及靜電保護晶粒之固定位置可以最佳化 從而使得光電元件之封裝尺寸可以縮小。 9 200929595 本發明係提供一種減少焊線製程限制之光電元件的封裝 結構，藉由將光電二極體及靜電保護晶粒固定於導線架之 不同高度處，而使得焊線製程之形成線形空間更大，從而 降低焊線製程之困難度。 為達上述目的，本發明揭示一種具靜電保護之光電元件 的封裝結構，纟包含一殼體、一導線架、一光電二極體、 eThe sealing layer 39 is filled in the casing 37, and the emitted light is transmitted. Since the light-emitting diode 31 and the Zener diode are recorded at the same height, the light emitted from the light-emitting diode 31 is affected or blocked by the side body 32. In particular, the Zener diode 32 is connected to the color and absorbs light, thereby reducing the transmission through the first line of the seal. In addition, the metal wires 36 are completed by a wire bonding (wWg) process. Therefore, a process space for the shape of the metal wires 36 is required. However, since the light-emitting diode 31 and the Zener diode 32 are located at the same height, the process space of the bonding wire is limited. Further, the package structure allows the photovoltaic element to provide a photovoltaic element having electrostatic protection. By fixing the electrostatic protection die to the recess of the lead frame, the luminous efficiency of the device is improved. This is a package structure of a photovoltaic element with electrostatic protection. The fixed position of the photodiode and the electrostatic protection die can be optimized so that the package size of the photovoltaic element can be reduced. 9 200929595 The present invention provides a package structure for a photovoltaic element that reduces the limitation of the wire bonding process. By fixing the photodiode and the electrostatic protection die at different heights of the lead frame, the formation of the wire bonding process is more linear. Large, thus reducing the difficulty of the wire bonding process. To achieve the above object, the present invention discloses a package structure for a photovoltaic element having electrostatic protection, comprising a housing, a lead frame, a photodiode, and e
一靜電保護晶粒及一封止層。該導線架係穿設於該殼體 内’並包含一第一電極部及_第二電極部。該第一電極部 另包括-第-晶粒固定座及—第二晶粒固定座，該第二晶 粒固定座係、低於該第-晶粒固定座及該第二電極部。該光 :二極=固定於該第一晶粒固定座，又該靜電保護晶粒固 定：該第二晶粒固定座。該封止層係填充於該殼體内，並 覆蓋該光電二極體及該靜電保護晶粒。 該光電二極體係一發光二極體或光敏二極體，又該靜電 保護晶粒係一齊納二極體之晶粒。 該第-電極部另包含一向下彎折之連接臂，該第一晶粒 固定座及該第二晶粒固^座係藉由該連接臂相互連接。 該光電元件另包含複數個金屬導線，該複數個金屬導線 電性連接該光電二極體及該靜電保護晶粒。 i光電元件另包含一容許光線穿射而出之發光面，立中 該第二晶粒固^座相較於該第—晶粒以座係遠離該發光 面。 、—埋設於該殼體内之基 連接臂’丨中該銲線區自 该第二電極部另包含一銲線區 部及一連接該銲線區及該基部之 200929595 该連接臂延伸到該第—晶粒固定座及該第二晶粒固定座之 中間。該光電元件另包含複數個金屬導線，該複數個金屬 導線經由該銲線區電性連接該光電二極體及該靜電保護晶 粒。 該第-電極部之極性係w電極及p型電極其中一者， 而6亥第二電極部之極性則是相對另外一者。 【實施方式】An electrostatic protection die and a stop layer. The lead frame is disposed in the housing and includes a first electrode portion and a second electrode portion. The first electrode portion further includes a first die attaching seat and a second die attaching seat, and the second crystal grain fixing seat is lower than the first die attaching seat and the second electrode portion. The light: two poles = fixed to the first die holder, and the static protection die is fixed: the second die holder. The sealing layer is filled in the casing and covers the photodiode and the electrostatic protection die. The photodiode system is a light emitting diode or a photodiode, and the electrostatic protection crystal is a crystal of a Zener diode. The first electrode portion further includes a downwardly bent connecting arm, and the first die attaching seat and the second die attaching base are connected to each other by the connecting arm. The photo-electric component further includes a plurality of metal wires electrically connected to the photodiode and the electrostatic protection die. The optoelectronic component further includes a light-emitting surface that allows light to pass through, and the second die-fixer is spaced apart from the light-emitting surface by the second die. The base wire arm embedded in the housing, the wire bonding region further includes a wire bonding portion from the second electrode portion and a connection to the wire bonding region and the base portion 200929595 The middle of the first die holder and the second die holder. The photo-electric component further includes a plurality of metal wires, and the plurality of metal wires are electrically connected to the photodiode and the electrostatic protection crystal grain via the wire bonding region. The polarity of the first electrode portion is one of the w electrode and the p-type electrode, and the polarity of the second electrode portion of the 6-well electrode is relatively the other. [Embodiment]
圖4係本發明具靜電保護之光電元件的剖面圖。光電元 件40包含一殼體47、一穿設於殼體”之導線架μ、一光 電一極體41及一靜電保護晶粒42，又導線架48包括一第 -電極部43及一第二電極部44。光電二極體“係藉由固 晶膠45固定於第-電極部43之第一晶粒固定座431上， 相似地靜電保護晶粒42之第二電極421亦藉由固晶膠Μ 固定於第二晶粒固定座432 Jl。第一晶粒固定座43ι及第 二晶粒固定座432係藉由一向下彎折之連接臂433相互連 接，因此第二晶粒固定座432相較於第一晶粒固定座431 及第一電極部44係遠離發光面4a。光電二極體41之第一 電極411藉由金屬導線461與第一電極部43電性相連，其 第二電極412藉由金屬導線462與第二電極部44電性相 連。靜電保護晶粒42之第二電極422貝,!藉由金屬導線如 與第二電極部44電性相連。一封止層49係填充於殼體47 内，並可使發光電二極體41發出之光線透射過，或者讓外 部光線穿透過而照射在光電二極體41表面。 光電二極體41可以是發光二極體或光敏二極體，又靜電 200929595 保護晶粒42係齊納二極體之‘ 極及p型電極其中一者，而第1:返第—電極係N型電 而第一電極則是相對另外一者。Figure 4 is a cross-sectional view showing a photovoltaic element with electrostatic protection according to the present invention. The photo-electric component 40 includes a housing 47, a lead frame μ that is disposed in the housing, a photo-electric body 41, and an electrostatic protection die 42. The lead frame 48 includes a first electrode portion 43 and a second portion. The electrode portion 44. The photodiode is "fixed on the first die attaching seat 431 of the first electrode portion 43 by the bonding adhesive 45, and the second electrode 421 of the electrostatically protected die 42 is also solidified by the solid crystal. The capsule is fixed to the second die holder 432 J1. The first die attaching seat 43 321 and the second die attaching seat 432 are connected to each other by a downwardly bent connecting arm 433 , so that the second die attaching seat 432 is compared with the first die attaching seat 431 and the first The electrode portion 44 is away from the light emitting surface 4a. The first electrode 411 of the photodiode 41 is electrically connected to the first electrode portion 43 by a metal wire 461, and the second electrode 412 is electrically connected to the second electrode portion 44 by a metal wire 462. The second electrode 422 of the electrostatic protection die 42 is electrically connected to the second electrode portion 44 by a metal wire. A stopper layer 49 is filled in the casing 47, and the light emitted from the light-emitting diode 41 can be transmitted or the external light can be transmitted to the surface of the photodiode 41. The photodiode 41 can be a light-emitting diode or a photodiode, and the electrostatic 200929595 protects the crystal 42 from one of the 'pole and p-type electrodes of the Zener diode, and the first: the first-electrode system N-type electricity and the first electrode is relatively the other.
由於靜電保護晶粒42之位置較光電二極體Μ之位置為 低’因此光電二_ 41發出之光線不會被旁邊之靜電保護 晶粒C影響或遮播。尤其是當靜電保護晶粒42是接近里 色的，對於光線有吸收之作用，從而降低透射過封止層49 之光線。另外，靜電保護晶粒42與光電二極體Μ之固定 位置可以更靠近，因此不需要如習之技術得考慮固晶膠Μ 攀爬：風險’亦即不用將靜電保護晶/粒42與光電二極體Ο 之固定位置拉開。另—方面，此種導線架48對於金屬導線 461〜463之銲線（wireb〇nding)製程也有較佳之優勢，對於 金屬導線461〜463之線型形成有較大之空間，不用擔心晶 崩問題之發生。 圖5係本發明另一實施具靜電保護之光電元件之上視 圖。為使光電元件40'中構件更清楚呈現，係將封止層自圖 中移除。導線架48,包括一第一電極部43ι及一第二電極部 44’’其中第一電極部43,又包括第一晶粒固定座431，、位置 車又低之第二晶粒固定座432’及向下彎折之連接臂433'，以 及第二電極部44'包括銲線區442,及埋設於殼體47内之基 部443，。銲線區441，自連接臂442，延伸到第一晶粒固定座 43Γ及第二晶粒固定座432,中間，因此金屬導線461〜463 之銲線更為容易。並且光電二極體41之固定位置可以更靠 近中間，故有利於光電元件40,之發光或接收光線之表現。 本發明之技術内容及技術特點已揭示如上，然而熟悉本 200929595 項技術之人士仍可能基於本發明之教示及揭示而作種種不 背離本發明精神之替換及修飾。因此，本發明之保護範圍 應不限於實施例所揭示者’而應包括各種不背離本發明之 替換及修飾，並為以下之申請專利範圍所涵蓋。 【圖式簡單說明】 圖1係典型發光二極體元件中發光二極體並聯保護晶體 之電路示意圖；Since the position of the electrostatic protection die 42 is lower than the position of the photodiode Μ, the light emitted by the photodiode 41 is not affected or blocked by the electrostatic protection grain C next to it. In particular, when the electrostatic protection die 42 is nearly chromatic, it has an absorption effect on the light, thereby reducing the light transmitted through the sealing layer 49. In addition, the fixed position of the electrostatic protection die 42 and the photodiode can be closer, so that it is not necessary to consider the solid crystal glue climbing as in the prior art: the risk 'that is, the electrostatic protection crystal/particle 42 and the photoelectric The fixed position of the diode Ο is pulled apart. On the other hand, the lead frame 48 has a better advantage for the wire-bonding process of the metal wires 461 to 463, and has a large space for the wire type of the metal wires 461 to 463, and there is no need to worry about the crystal collapse problem. occur. Figure 5 is a top plan view of a photovoltaic element with electrostatic protection in accordance with another embodiment of the present invention. In order to make the components in the photovoltaic element 40' more clearly presented, the sealing layer is removed from the figure. The lead frame 48 includes a first electrode portion 431 and a second electrode portion 44'. wherein the first electrode portion 43 further includes a first die attaching seat 431, and the second die attaching seat 432 having a lower position. The 'and the downwardly bent connecting arm 433', and the second electrode portion 44' include a wire bonding portion 442 and a base portion 443 embedded in the housing 47. The bonding wire region 441 extends from the connecting arm 442 to the first die attaching seat 43A and the second die attaching seat 432, so that the bonding wires of the metal wires 461 to 463 are easier. Moreover, the fixed position of the photodiode 41 can be closer to the middle, which is advantageous for the light-emitting or receiving light of the photovoltaic element 40. The technical content and technical features of the present invention have been disclosed as above, and those skilled in the art, in addition to the teachings of the present invention, may still make various substitutions and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is not to be construed as limited by the scope of BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic circuit diagram of a light-emitting diode parallel protection crystal in a typical light-emitting diode element;
圖2係美國第M54,716號專利所揭露之發光二極體元件 剖面圖； 圖3係習知表面黏著式之發光二極體元件的剖面圖； 圖4係本發明具靜電保護之光電元件的剖面圖；以及 圖 圖5係本發明另—實施具靜電保護之光電元件之上視 〇 【主要元件符號說明】 11 發光二 極體 20 發光二 極體 22 齊納二 極體 24 負極支架 26 金屬導線 31 發光二 極體 33 N型電 極部 35 固晶膠 37 殼體 39 封止層 10發光二極體元件 12 齊納二極體 21發光二極體 23 正極支架 25固晶膠 〇 發光二極體元件 32齊納二極體 34 p型電極部 36金屬導線 38導線架 -11 - 200929595 40、40' 光電元件 41 光電二極體 42 靜電保護晶粒 43、43' 第一電極部 44、44’ 第二電極部 45 固晶膠 47 殼體 48、48' 導線架 49 封止層 4a 發光面 211、221 N型電極 212、222 P型電極 231 燈座底部 232 燈座頂部 411、421 第一電極 412、422 第二電極 461〜463 金屬導線 431 ' 431' 第一晶粒固定座 432、 432' 第二晶粒固定座 433、 433， 連接臂 442· 銲線區 443' 基部 參 -12-Figure 2 is a cross-sectional view of a light-emitting diode element disclosed in U.S. Patent No. M54,716; Figure 3 is a cross-sectional view of a conventional surface-adhesive light-emitting diode element; Figure 4 is a photovoltaic element having electrostatic protection according to the present invention; FIG. 5 is a cross-sectional view of a photovoltaic element having electrostatic protection. [Main component symbol description] 11 Light-emitting diode 20 Light-emitting diode 22 Zener diode 24 Negative electrode holder 26 Metal wire 31 Light-emitting diode 33 N-type electrode portion 35 Solid crystal glue 37 Housing 39 Sealing layer 10 Light-emitting diode element 12 Zener diode 21 Light-emitting diode 23 Positive electrode holder 25 Solid crystal plastic light Two Polar body element 32 Zener diode 34 p-type electrode portion 36 metal wire 38 lead frame-11 - 200929595 40, 40' photoelectric element 41 photodiode 42 electrostatic protection die 43, 43' first electrode portion 44, 44' second electrode portion 45 solid crystal adhesive 47 housing 48, 48' lead frame 49 sealing layer 4a light emitting surface 211, 221 N-type electrode 212, 222 P-type electrode 231 lamp holder bottom 232 lamp holder top 411, 421 One electrode 412, 422 second electric Pole 461~463 metal wire 431 ' 431' first die mount 432, 432' second die mount 433, 433, connecting arm 442 · wire bond area 443' base reference -12-