TWI479703B - Light emitting device package using quantum dot, illumination apparatus and display apparatus - Google Patents
Light emitting device package using quantum dot, illumination apparatus and display apparatus Download PDFInfo
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- TWI479703B TWI479703B TW100120506A TW100120506A TWI479703B TW I479703 B TWI479703 B TW I479703B TW 100120506 A TW100120506 A TW 100120506A TW 100120506 A TW100120506 A TW 100120506A TW I479703 B TWI479703 B TW I479703B
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- 239000002096 quantum dot Substances 0.000 title claims description 115
- 238000005286 illumination Methods 0.000 title claims description 10
- 238000007789 sealing Methods 0.000 claims description 81
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 239000004054 semiconductor nanocrystal Substances 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 16
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 238000010586 diagram Methods 0.000 claims description 13
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 239000003960 organic solvent Substances 0.000 claims description 9
- 239000002952 polymeric resin Substances 0.000 claims description 8
- 229920003002 synthetic resin Polymers 0.000 claims description 8
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 229920002050 silicone resin Polymers 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 239000002159 nanocrystal Substances 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- 229910004611 CdZnTe Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910004262 HgTe Inorganic materials 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- 241000764773 Inna Species 0.000 claims description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 3
- 229910018321 SbTe Inorganic materials 0.000 claims description 3
- 229910007709 ZnTe Inorganic materials 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229920005990 polystyrene resin Polymers 0.000 claims description 2
- 241000566113 Branta sandvicensis Species 0.000 claims 1
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 239000002861 polymer material Substances 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 16
- 238000005538 encapsulation Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000002612 dispersion medium Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical class [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
Description
本案係主張2010年6月14日向美國專利商標局申請之美國臨時申請案第61/354,429號以及向韓國智慧財產局申請之韓國專利申請案第10-2010-0102419號之優先權，其揭示內容以引用方式併入本案。The present invention claims the priority of the U.S. Provisional Application No. 61/354,429, filed on Jun. 14, 2010, and the Korean Patent Application No. 10-2010-01024. Incorporate this case by reference.
本發明係關於一種使用量子點之發光裝置封裝件、照明設備及顯示設備。The present invention relates to a light emitting device package, a lighting device and a display device using quantum dots.
量子點係為具有約10奈米(nm)或更少直徑的半導體奈米晶體(nanocrystal)，且產生量子侷限效應(quantum confinement effect)。該量子點可發射的光較強於內部有狹波長帶之一般螢光體(phosphor)所發射的光。藉由受激電子(excited electrons)由傳導帶(conduction band)至價帶(valence band)的轉換，可實現藉由量子點的光發射。甚至於相同材料之量子點的情況中，量子點根據其粒子尺寸(particle size)可發射具有不同波長的光。當減少量子點之尺寸時，量子點可發射短波長的光。因此，藉由調整量子點之粒子尺寸可得到具有所需波長帶的光。The quantum dot system is a semiconductor nanocrystal having a diameter of about 10 nanometers (nm) or less, and produces a quantum confinement effect. The quantum dots can emit light that is stronger than light emitted by a typical phosphor having a narrow wavelength band. Light emission by quantum dots can be achieved by the conversion of conduction electrons from a conduction band to a valence band. Even in the case of quantum dots of the same material, quantum dots can emit light having different wavelengths depending on their particle size. When reducing the size of a quantum dot, a quantum dot can emit light of a short wavelength. Therefore, light having a desired wavelength band can be obtained by adjusting the particle size of the quantum dots.
在有機溶劑中藉由配位鍵(coordinate bond)可分散量子點。在量子點未適當地分散或曝露到氧氣或溼氣的情況中，可能減少其光發射效率。為了解決此問題，已藉由 有機物質來囊封(encapsulate)量子點。然而，使用機物質或其他具有相對高帶隙(band gap)之材料，來包覆量子點本身，在製程及成本效率方面是有問題的。因此，增加了對使用量子點以促成改善穩定性及光發射效率之方法的要求。如同嘗試滿足此需求的範例，將具有量子點分散其中之有機溶劑、聚合物或等等注入至聚合物電池或玻璃單元(glass cell)內，從而保護該量子點免於曝露到氧氣或溼氣。Quantum dots can be dispersed by a coordinate bond in an organic solvent. In the case where the quantum dots are not properly dispersed or exposed to oxygen or moisture, it is possible to reduce their light emission efficiency. In order to solve this problem, it has been Organic substances to encapsulate quantum dots. However, the use of organic materials or other materials having a relatively high band gap to coat the quantum dots themselves is problematic in terms of process and cost efficiency. Therefore, the requirements for methods using quantum dots to promote improved stability and light emission efficiency have increased. As an example of attempting to meet this need, an organic solvent, polymer or the like having quantum dots dispersed therein is injected into a polymer battery or a glass cell to protect the quantum dot from exposure to oxygen or moisture. .
本發明之一態樣提供一種穩定使用量子點之發光裝置封裝件、照明設備及顯示設備。One aspect of the present invention provides a light emitting device package, a lighting device, and a display device that stably use quantum dots.
根據本發明之一個態樣，提供一種發光裝置封裝件，包括：發光裝置；密封部，係安置在由該發光裝置所發射之光的路徑中且具有透鏡形狀；以及波長轉換部，係密封在該密封部內且包含量子點。According to an aspect of the present invention, a light emitting device package includes: a light emitting device; a sealing portion disposed in a path of light emitted by the light emitting device and having a lens shape; and a wavelength converting portion sealed The sealing portion contains quantum dots therein.
該密封部可具有外表面及面向該發光裝置之內表面，且該外和內表面可具有朝該發光裝置之上部部分的凸向形狀。The seal portion may have an outer surface and an inner surface facing the light emitting device, and the outer and inner surfaces may have a convex shape toward an upper portion of the light emitting device.
該發光裝置可安置成被具該凸向形狀之該內表面密閉。The illuminating device can be disposed to be sealed by the inner surface having the convex shape.
該發光裝置封裝件可復包括透明囊封部(encapsulation part)，其係填充由該密封部之該內表面所界定的空間。The illuminating device package can include a transparent encapsulation portion that fills a space defined by the inner surface of the sealing portion.
該發光裝置封裝件可復包括一對導線架，且可提供該 對導線架之一者作為該發光裝置的安裝地區。The illuminating device package can include a pair of lead frames, and the One of the lead frames is used as the mounting area of the light-emitting device.
該發光裝置封裝件復包括一對導電性導線，係電性連接該發光裝置至該對導線架，且該對導電性導線可安置成被具該凸向形狀之該內表面密閉。The illuminating device package further comprises a pair of conductive wires electrically connected to the illuminating device to the pair of lead frames, and the pair of conductive wires can be disposed to be sealed by the inner surface having the convex shape.
該發光裝置封裝件可復包括封裝體，其係提供該發光裝置的安裝地區，且以安置該密封部之方向反射由該發光裝置所發射之光。The illuminating device package may further include a package that provides a mounting area of the illuminating device and reflects light emitted by the illuminating device in a direction in which the sealing portion is disposed.
該封裝體可包括透明樹脂、以及分散於該透明樹脂中之光反射粒子。The package may include a transparent resin and light reflecting particles dispersed in the transparent resin.
該發光裝置封裝件可復包括導電性導線，其係傳遞電子訊號至該發光裝置，且部分該導電性導線可安置於該封裝體內。The illuminating device package can further include a conductive wire that transmits an electronic signal to the illuminating device, and a portion of the conductive wire can be disposed in the package.
該發光裝置封裝件可復包括一對外部端子，係由該封裝體之側邊表面延伸至其下部表面，且電性連接至該發光裝置。The illuminating device package can include a pair of external terminals extending from a side surface of the package to a lower surface thereof and electrically connected to the illuminating device.
該密封部可由玻璃或聚合物材料所形成。The seal can be formed from a glass or polymeric material.
該波長轉換部可復包括有機溶劑或具該量子點分散其中之聚合物樹脂。The wavelength converting portion may further include an organic solvent or a polymer resin having the quantum dots dispersed therein.
該有機溶劑可包括甲苯、三氯甲烷及乙醇之至少一者。The organic solvent may include at least one of toluene, chloroform, and ethanol.
該聚合物樹脂可包括環氧樹脂、矽氧樹脂、聚苯乙烯樹脂及丙烯酸樹脂之至少一者。The polymer resin may include at least one of an epoxy resin, a silicone resin, a polystyrene resin, and an acrylic resin.
該量子點可包括矽基奈米晶體、II-VI族化合物半導體奈米晶體、III-V族化合物半導體奈米晶體、V-VI族化合物半導體奈米晶體或其混合之至少一者。The quantum dot may include at least one of a thiol nanocrystal, a II-VI compound semiconductor nanocrystal, a III-V compound semiconductor nanocrystal, a V-VI compound semiconductor nanocrystal, or a mixture thereof.
該II-VI族化合物半導體奈米晶體可選自由CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、HgS、HgSe、HgTe、CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe,ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HggZnTe、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe及HgZnSTe所組成之群組。The II-VI compound semiconductor nanocrystal can be selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS. a group consisting of CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HggZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe.
該III-V族化合物半導體奈米晶體可選自由GaN、GaP、GaAs、AlN、AlP、AlAs、InN、InP、InAs、GaNP、GaNAs、GaPAs、AlNP、AlNAs、AlPAs、InNP、InNAs、InPAs、GaAlNP、GaAlNAs、GaAlPAs、GaInNP、GaInNAs、GaInPAs、InAlNP、InAlNAs、及InAlPAs所組成之群組。The III-V compound semiconductor nanocrystal can be selected from GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaN, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP. a group consisting of GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPAs, InAlNP, InAlNAs, and InAlPAs.
該V-VI族化合物半導體奈米晶體可為SbTe。The V-VI compound semiconductor nanocrystal may be SbTe.
該量子點可包括具有在綠色光波長帶內部之峰值波長的第一量子點。The quantum dot can include a first quantum dot having a peak wavelength within a green light wavelength band.
該量子點可包括具有在紅色光波長帶內部之峰值波長的第二量子點。The quantum dot can include a second quantum dot having a peak wavelength within the red light wavelength band.
該發光裝置係發射藍色光，且該量子點包括具有在綠色光波長帶內部之峰值波長的第一量子點、以及具有在紅色光波長帶內部之峰值波長的第二量子點。The illuminating device emits blue light, and the quantum dot includes a first quantum dot having a peak wavelength inside the green light wavelength band, and a second quantum dot having a peak wavelength inside the red light wavelength band.
由該發光裝置所發射之光具有435nm到470nm的波長，由該第一量子點所發射之綠色光可具有的顏色座標落於由四個基於CIE 1931色度圖之座標點(0.1270,0.8037)、(0.4117,0.5861)、(0.4197,0.5316)和(0.2555, 0.5030)界定之區域內，且由該第二量子點所發射之紅色光可具有的顏色座標落於由四個基於CIE 1931色度圖之座標點(0.5448,0.4544)、(0.7200,0.2800)、(0.6427,0.2905)和(0.4794,0.4633)界定之區域內。The light emitted by the illuminating device has a wavelength of 435 nm to 470 nm, and the green light emitted by the first quantum dot may have a color coordinate falling on the coordinate point (four, 270, 0.8037) based on four CIE 1931 chromaticity diagrams. , (0.4117, 0.5861), (0.4197, 0.5316) and (0.2555, 0.5030) within the defined region, and the red light emitted by the second quantum dot may have a color coordinate that falls on the coordinates of the four based on the CIE 1931 chromaticity diagram (0.5448, 0.4544), (0.7200, 0.2800), Within the area defined by (0.6427, 0.2905) and (0.4794, 0.4633).
由該第一量子點所發射之綠色光可具有的顏色座標落於由四個基於CIE 1931色度圖之座標點(0.1270,0.8037)、(0.3700,0.6180)、(0.3700,0.5800)和(0.2500,0.5500)界定之區域內，且由該第二量子點所發射之紅色光可具有的顏色座標落於由四個基於CIE 1931色度圖之座標點(0.6000,0.4000)、(0.7200,0.2800)、(0.6427,0.2905)和(0.6000,0.4000)界定之區域內。The green light emitted by the first quantum dot may have a color coordinate that falls on the coordinate points (0.1270, 0.8037), (0.3700, 0.6180), (0.3700, 0.5800), and (0.2500) based on four CIE 1931 chromaticity diagrams. , 0.5500) within the defined region, and the red color emitted by the second quantum dot may have a color coordinate that falls on the coordinates of the four based on the CIE 1931 chromaticity diagram (0.6000, 0.4000), (0.7200, 0.2800) Within the area defined by (0.6427, 0.2905) and (0.6000, 0.4000).
由該發光裝置所發射之光可具有10nm到30nm之半高全寬(full-width half-maximum)，由該第一量子點所發射之光可具有10nm到60nm之半高全寬，且由該第二量子點所發射之光可具有30nm到80nm之半高全寬。The light emitted by the illuminating device may have a full-width half-maximum of 10 nm to 30 nm, and the light emitted by the first quantum dot may have a full width at half maximum of 10 nm to 60 nm, and the second quantum The light emitted by the dots may have a full width at half maximum of 30 nm to 80 nm.
該發光裝置可發射紫外線光，且該量子點可包括具有在藍色光波長帶內部之峰值波長的第一量子點、具有在綠色光波長帶內部之峰值波長的第二量子點、以及具有在紅色光波長帶內部之峰值波長的第三量子點。The light emitting device can emit ultraviolet light, and the quantum dot can include a first quantum dot having a peak wavelength inside a blue light wavelength band, a second quantum dot having a peak wavelength inside the green light wavelength band, and having a red color A third quantum dot of the peak wavelength inside the optical wavelength band.
根據本發明之另一態樣，提供一種發光裝置封裝件，包括：發光裝置；密封部，係附接至該發光裝置之表面；波長轉換部，係密封在該密封部內且包含量子點；以及一對電極，安置在該發光裝置上成相對於該密封部。According to another aspect of the present invention, a light emitting device package includes: a light emitting device; a sealing portion attached to a surface of the light emitting device; and a wavelength converting portion sealed in the sealing portion and including quantum dots; A pair of electrodes are disposed on the light emitting device relative to the sealing portion.
該發光裝置封裝件可復包括封裝體，係覆蓋附接於該 密封部之該發光裝置之表面以外的該發光裝置之表面，並以安置該密封部之方向反射由該發光裝置所發射之光。The illuminating device package may further include a package attached to the The surface of the light-emitting device other than the surface of the light-emitting device of the sealing portion reflects the light emitted by the light-emitting device in a direction in which the sealing portion is disposed.
該封裝體可包括透明樹脂、以及分散於該透明樹脂中之光反射粒子。The package may include a transparent resin and light reflecting particles dispersed in the transparent resin.
該封裝體可允許一對電極於向外曝露。The package can allow a pair of electrodes to be exposed to the outside.
該密封部具有凸向透鏡形狀或長方體(rectangular parallelepiped)形狀。The sealing portion has a convex lens shape or a rectangular parallelepiped shape.
該波長轉換部可具有與該密封部形狀相對應之形狀。The wavelength converting portion may have a shape corresponding to the shape of the sealing portion.
該發光裝置可包括複數發光裝置，每一個具有該對電極。The illumination device can include a plurality of illumination devices, each having the pair of electrodes.
該密封部和該波長轉換部可一體成型地形成為有關該複數發光裝置之單件。The sealing portion and the wavelength converting portion may be integrally formed as a single piece relating to the plurality of light emitting devices.
該發光裝置封裝件可復包括封裝體，係覆蓋附接於該密封部之發光裝置之表面以外的每一該複數發光裝置之表面，並以安置該密封部之方向反射由該發光裝置所發射之光。該發光裝置封裝件可復包括外部端子，其係沿著該封裝體之表面提供且連接至該對電極。The illuminating device package may further include a package covering a surface of each of the plurality of illuminating devices except the surface of the illuminating device attached to the sealing portion, and being reflected by the illuminating device in a direction in which the sealing portion is disposed Light. The illuminating device package can include external terminals that are provided along the surface of the package and that are coupled to the pair of electrodes.
根據本發明之另一態樣，提供一種照明設備，包括：如前面所述之發光裝置封裝件；以及電源供應單元，係供應電源至發光裝置封裝件。According to another aspect of the present invention, a lighting apparatus is provided, comprising: a light emitting device package as described above; and a power supply unit that supplies power to the light emitting device package.
該電源供應單元可包括：介面，係接收電源；以及電源控制部，係控制供應至該發光裝置封裝件之電源。The power supply unit may include: an interface that receives power; and a power control unit that controls a power supply to the light emitting device package.
根據本發明之另一態樣，提供一種顯示設備，包括：如前面所述之發光裝置封裝件；以及顯示面板，係顯示影 像及接收由該發光裝置封裝件所發射之光。According to another aspect of the present invention, a display device is provided, comprising: a light emitting device package as described above; and a display panel Like and receiving light emitted by the illuminating device package.
現在將參照所附圖式詳細說明本發明之實施例。Embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
然而，本發明可以用許多不同的形式實施，並且將不解釋為受本文中所提出之實施例之限制。而是，提供該等實施例使得此揭示之內容將是徹底和完整的，並且將完全傳達本發明之範疇給所屬領域中的技術人員。However, the invention may be embodied in many different forms and is not construed as being limited to the embodiments set forth herein. Rather, the embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
於各圖式中，為了清楚起見，元件的形狀和尺寸可以誇大，以及相同的元件符號將使用於各圖中以指示相同或者相似的元件。The shapes and sizes of the elements may be exaggerated for the sake of clarity, and the same element symbols will be used in the drawings to indicate the same or similar elements.
第1圖係說明根據本發明之一實施例之發光裝置封裝件的橫截面圖。請參照第1圖，根據本發明之此實施例的發光裝置封裝件100，可包括發光裝置101、一對導線架102a、102b、封裝體103、具有透鏡形狀的密封部104、波長轉換部105、以及透明囊封部106。當對其施加電子訊號時，該發光裝置101可利用光電裝置發射光。發光二極體(LED)晶片可為代表性的發光裝置。舉例來說，為此，可使用發射藍色光之氮化鎵系列發光二極體晶片。藉由該波長轉換部105，至少部份該藍色光可轉換為不同顏色的光，之後將下面敘述。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing a light emitting device package in accordance with an embodiment of the present invention. Referring to FIG. 1, a light emitting device package 100 according to this embodiment of the present invention may include a light emitting device 101, a pair of lead frames 102a and 102b, a package body 103, a sealing portion 104 having a lens shape, and a wavelength converting portion 105. And a transparent encapsulation portion 106. When an electronic signal is applied thereto, the light-emitting device 101 can emit light using the photovoltaic device. A light emitting diode (LED) wafer can be a representative light emitting device. For example, a gallium nitride series light emitting diode chip that emits blue light can be used for this purpose. At least a part of the blue light can be converted into light of different colors by the wavelength converting portion 105, which will be described later.
該對導線架102a、102b可藉由一對導電性導線W電性連接至該發光裝置101，且可使用作為外部電子訊號之應用的端子。為此目的，該對導線架102a、102b可由具優越導電性之金屬來形成。如第1圖所示，該對導線架102a、 102b之一者可提供作為該發光裝置101的安裝地區。在本實施例中，連接至該發光裝置101之一對電極(未圖示)以安置該密封部104之方向安置於該發光裝置101之上部部分，且利用該對導電性導線W使該發光裝置101連接至該對導線架102a、102b。然而，根據本發明之實施例可變化其連接方法。舉例來說，該發光裝置101可直接電性連接至提供作為其安裝地區的一導線架102a而無需使用導線，只要連接至另一導線架102b使用導線。如另一範例，該發光裝置101可以覆晶接合方式安置而無需導電性導線W。同時，在本實施例中係提供單一發光裝置；然而，可提供兩個或更多發光裝置。再者，使用導電性導線作為佈線構造的範例；然而，可以許多型態的佈線結構來取代，例如，金屬線，只要電子訊號可通過其中傳遞。The pair of lead frames 102a, 102b can be electrically connected to the light emitting device 101 by a pair of conductive wires W, and can be used as a terminal for an external electronic signal application. For this purpose, the pair of lead frames 102a, 102b may be formed of a metal having superior conductivity. As shown in FIG. 1, the pair of lead frames 102a, One of the 102bs can be provided as an installation area of the light-emitting device 101. In this embodiment, a pair of electrodes (not shown) connected to the light-emitting device 101 are disposed in an upper portion of the light-emitting device 101 in a direction in which the sealing portion 104 is disposed, and the light is emitted by the pair of conductive wires W. Device 101 is coupled to the pair of leadframes 102a, 102b. However, the connection method can be changed according to an embodiment of the present invention. For example, the light-emitting device 101 can be directly electrically connected to a lead frame 102a provided as a mounting area thereof without using a wire, as long as it is connected to another lead frame 102b using a wire. As another example, the light emitting device 101 can be placed in a flip-chip bonding manner without the need for a conductive wire W. Meanwhile, a single light-emitting device is provided in the present embodiment; however, two or more light-emitting devices may be provided. Furthermore, conductive wires are used as an example of the wiring structure; however, many types of wiring structures may be substituted, for example, metal wires, as long as electronic signals can be transmitted therethrough.
該封裝體103可相對於與該發光裝置101有關之該密封部104而安置，並可供固定該對導線架102a、102b。該封裝體103可以具電絕緣之材料而形成，只要有優越的熱放射率(emissivity)及光反射性之特性；然而，特別地該封裝體103之材料不受此限制。據此，該封裝體103可由透明樹脂形成，且具有其中光反射粒子，例如，二氧化鈦，分散在該透明樹脂內之結構。The package body 103 can be disposed relative to the sealing portion 104 associated with the light emitting device 101 and can be used to secure the pair of lead frames 102a, 102b. The package body 103 may be formed of an electrically insulating material as long as it has superior emissivity and light reflectivity characteristics; however, in particular, the material of the package body 103 is not limited thereto. According to this, the package body 103 can be formed of a transparent resin and has a structure in which light-reflecting particles, for example, titanium oxide, are dispersed in the transparent resin.
在本實施例中，密封部104可安置在發光裝置101上於由發光裝置101發射之光的路徑中，且具有凸向透鏡形狀。特別地，該密封部104具有外表面及面向該發光裝置101之內表面，且該外和內表面可具有朝向該發光裝置101 之上部部分的凸向形狀。在此情況中，如第1圖所示，發光裝置101和導電性導線W安置成，由具凸向形狀之內表面來密閉。可將由矽氧樹脂或等等所形成之透明囊封部106，提供在該密封部之內表面所界定的空間內。透明囊封部106可保護發光裝置101及導電性導線W，且提供與該發光裝置101之材料相配的折射率(refraction index)。該透明囊封部106並非必要的，所以依據本發明之實施例是可被省略。In the present embodiment, the sealing portion 104 may be disposed in the path of the light emitted by the light emitting device 101 on the light emitting device 101, and has a convex lens shape. In particular, the sealing portion 104 has an outer surface and an inner surface facing the light emitting device 101, and the outer and inner surfaces may have an orientation toward the light emitting device 101. The convex shape of the upper portion. In this case, as shown in Fig. 1, the light-emitting device 101 and the conductive wire W are disposed to be sealed by the inner surface having a convex shape. A transparent encapsulant 106 formed of a silicone resin or the like may be provided in a space defined by the inner surface of the sealing portion. The transparent encapsulation portion 106 protects the light-emitting device 101 and the conductive wires W and provides a refractive index matching the material of the light-emitting device 101. The transparent encapsulation 106 is not essential and may therefore be omitted in accordance with embodiments of the present invention.
該波長轉換部105係密封在該密封部104內部並且包括量子點。為此目的，該密封部104可由玻璃或適用於保護該量子點免於曝露到氧氣或溼氣之透明聚合物材料所形成。於此，該波長轉換部105可具有與該密封部104相對應之形狀，但非必要需求。該量子點為具有約1nm到10nm之直徑的半導體奈米晶體，並呈現量子侷限效應。該量子點轉換由該發光裝置101所發出光之波長，從而產生已轉換波長之光(wavelength-converted light)，即，螢光。舉例來說，該量子點可為如矽基奈米晶體、II-VI族化合物半導體奈米晶體、III-V族化合物半導體奈米晶體、V-VI族化合物半導體奈米晶體等等之奈米晶體。在本實施例中前述該量子點之範例可單獨地或結合的使用。The wavelength conversion portion 105 is sealed inside the sealing portion 104 and includes quantum dots. To this end, the seal portion 104 can be formed from glass or a transparent polymeric material suitable for protecting the quantum dots from exposure to oxygen or moisture. Here, the wavelength conversion portion 105 may have a shape corresponding to the sealing portion 104, but is not necessarily required. The quantum dots are semiconductor nanocrystals having a diameter of about 1 nm to 10 nm and exhibit quantum confinement effects. The quantum dots convert the wavelength of the light emitted by the light-emitting device 101, thereby generating wavelength-converted light, that is, fluorescent light. For example, the quantum dot may be a nanometer such as a fluorenyl nanocrystal, a II-VI compound semiconductor nanocrystal, a III-V compound semiconductor nanocrystal, a V-VI compound semiconductor nanocrystal, or the like. Crystal. The foregoing examples of the quantum dots in this embodiment may be used singly or in combination.
更具體地，II-VI族化合物半導體奈米晶體可為選自由CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、HgS、HgSe、HgTe、CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe,ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS,CdHgSe、 CdHgTe、HgZnS、HgZnSe、HggZnTe、CdZnSeS、CdZnSeTe、CdZnSTe、CdHgSeS、CdHgSeTe、CdHgSTe、HgZnSeS、HgZnSeTe及HgZnSTe所組成之群組。III-V族化合物半導體奈米晶體可為選自由GaN、GaP、GaAs、AlN、AlP、AlAs、InN、InP、InAs、GaNP、GaNAs、GaPAs、AlNP、AlNAs、AlPAs、InNP、InNAs、InPAs、GaAlNP、GaAlNAs、GaAlPAs、GaInNP、GaInNAs、GaInPAs,InAlNP、InAlNAs、及InAlPAs所組成之群組。V-VI族化合物半導體奈米晶體可為SbTe。More specifically, the II-VI compound semiconductor nanocrystal may be selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe , HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, A group consisting of CdHgTe, HgZnS, HgZnSe, HggZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. The III-V compound semiconductor nanocrystal may be selected from the group consisting of GaN, GaP, GaAs, AlN, AlP, AlAs, InN, InP, InAs, GaNP, GaNAs, GaPAs, AlNP, AlNAs, AlPAs, InNP, InNAs, InPAs, GaAlNP. A group consisting of GaAlNAs, GaAlPAs, GaInNP, GaInNAs, GaInPAs, InAlNP, InAlNAs, and InAlPAs. The V-VI compound semiconductor nanocrystal may be SbTe.
可藉由配位鍵，將量子點分散在如有機溶劑或聚合物樹脂之分散媒介中。如上所述，將具有此結構之該波長轉換部105，密封在該密封部104的內部。於此，該分散媒介可利用具不影響該量子點之波長轉換功能的透明媒介。舉例來說，該有機溶劑可包括甲苯(toluene)、三氯甲烷(chloroform)及乙醇(ethanol)之至少一者，且該聚合物樹脂可包括環氧樹脂(epoxy resin)、矽氧樹脂(silicone resin)、聚苯乙烯樹脂(polysthylene resin)及丙烯酸樹脂(acrylate resin)之至少一者。在使用該聚合物樹脂作為分散媒介的情況中，可注入具有該量子點分散其中之該聚合物樹脂至該該密封部104內並之後硬化。The quantum dots can be dispersed in a dispersion medium such as an organic solvent or a polymer resin by a coordination bond. As described above, the wavelength converting portion 105 having this configuration is sealed inside the sealing portion 104. Here, the dispersion medium can utilize a transparent medium having a wavelength conversion function that does not affect the quantum dots. For example, the organic solvent may include at least one of toluene, chloroform, and ethanol, and the polymer resin may include an epoxy resin or a silicone resin. At least one of a resin), a polysthylene resin, and an acrylate resin. In the case of using the polymer resin as a dispersion medium, the polymer resin having the quantum dot dispersed therein may be injected into the sealing portion 104 and then hardened.
同時，藉由受激電子由傳導帶至價帶的轉換，可實現以該量子點的光發射。甚至於相同材料之量子點的情況中，該量子點根據其粒子尺寸可發射具有不同波長的光。當減少該量子點之尺寸時，該量子點可發射短波長的光。藉由調整該量子點之尺寸可得到具有所需波長帶的光。於 此，該量子點之尺寸可藉由適當地改變奈米晶體的生長狀態而加以調整。At the same time, light emission by the quantum dots can be achieved by the conversion of the excited electrons from the conduction band to the valence band. Even in the case of quantum dots of the same material, the quantum dots can emit light having different wavelengths depending on their particle size. When the size of the quantum dot is reduced, the quantum dot can emit light of a short wavelength. Light having a desired wavelength band can be obtained by adjusting the size of the quantum dot. to Thus, the size of the quantum dot can be adjusted by appropriately changing the growth state of the nanocrystal.
如上所述，該發光裝置101可發射藍色光，更具體地，係具有約435nm到470nm之主波長的光。在此情況中，該量子點可包括具有在綠色光波長帶內部之峰值波長(peak wavelength)的第一量子點，以及具有在紅色光波長帶內部之峰值波長的第二量子點。於此，可適當地調整該第一和第二量子點之尺寸，以導致該第一量子點具有約500nm到550nm之峰值波長且導致該第二量子點具有約580nm到660nm之峰值波長。同時，該量子點可發射的光較強於內部有狹波長帶之一般螢光體所發射的光。因此，在根據本實施例之該量子點中，該第一量子點可具有約10nm到60nm之半高全寬(full-width half-maximum，FWHM)，且該第二量子點可具有約30nm到80nm之半高全寬。在此情況中，該發光裝置101可利用具有約10nm到30nm之半高全寬(FWHM)的藍色發光二極體晶片。As described above, the light-emitting device 101 can emit blue light, more specifically, light having a dominant wavelength of about 435 nm to 470 nm. In this case, the quantum dot may include a first quantum dot having a peak wavelength inside a green light wavelength band, and a second quantum dot having a peak wavelength inside the red light wavelength band. Here, the sizes of the first and second quantum dots may be appropriately adjusted to cause the first quantum dot to have a peak wavelength of about 500 nm to 550 nm and cause the second quantum dot to have a peak wavelength of about 580 nm to 660 nm. At the same time, the quantum dots can emit light that is stronger than light emitted by a general phosphor having a narrow wavelength band inside. Therefore, in the quantum dot according to the embodiment, the first quantum dot may have a full-width half-maximum (FWHM) of about 10 nm to 60 nm, and the second quantum dot may have about 30 nm to 80 nm. Half height and full width. In this case, the light-emitting device 101 can utilize a blue light-emitting diode wafer having a full width at half maximum (FWHM) of about 10 nm to 30 nm.
第21圖係表示根據本發明之一實施例之取決於由發光裝置封裝件所發射光之波長帶的光度之圖式。第22圖係表示根據本發明之一實施例之由發光裝置封裝件所發射之光的顏色座標之色度圖。Figure 21 is a diagram showing the luminosity depending on the wavelength band of light emitted by the light-emitting device package in accordance with an embodiment of the present invention. Figure 22 is a chromaticity diagram showing the color coordinates of light emitted by a light-emitting device package in accordance with an embodiment of the present invention.
如上所述，根據本實施例，可藉由調整在發光裝置封裝件中所提供量子點之粒子尺寸來控制光之波長帶。舉例來說，可控制該波長帶以呈現在表1所述的特性。As described above, according to the present embodiment, the wavelength band of light can be controlled by adjusting the particle size of the quantum dots provided in the light-emitting device package. For example, the wavelength band can be controlled to exhibit the characteristics described in Table 1.
在表1中，Wp表示藍色、綠色及紅色光的主波長，且FWHM表示藍色、綠色及紅色光的半高全寬。請參照表1，由該發光裝置101發射藍色光，且由該量子點發射綠色和紅色光。該藍色、綠色及紅色光可具有如第21圖所示之光強度分佈(light intensity distribution)。另外，可調整所使用之該量子點的粒子尺寸從而控制波長帶，且可調整根據其粒子尺寸的該量子點之集中性(concentration)從而控制顏色座標。因此，如第22圖所示，可調整該量子點之粒子尺寸及集中性，如此由該第一量子點所發射之綠色光係具有落於由四個基於CIE 1931色度圖之座標點(0.1270,0.8037)、(0.4117,0.5861)、(0.4197,0.5316)和(0.2555,0.5030)界定之區域A內的顏色座標，且由該第二量子點所發射之紅色光係具有落於由四個基於CIE 1931色度圖之座標點(0.5448,0.4544)、(0.7200,0.2800)、(0.6427,0.2905)和(0.4794,0.4633)界定之區域B內的顏色座標。如第22圖所示，具有此分佈的該發光裝置封裝件相較於使用現有螢光體之產品有相對地寬的區域，並基於美國國家電視標準委員會(NTSC)標準呈現95%或更大色彩重現性及非常高光強度。In Table 1, Wp represents the dominant wavelengths of blue, green, and red light, and FWHM represents the full width at half maximum of the blue, green, and red lights. Referring to Table 1, blue light is emitted by the light emitting device 101, and green and red light is emitted by the quantum dots. The blue, green, and red lights may have a light intensity distribution as shown in FIG. In addition, the particle size of the quantum dot used can be adjusted to control the wavelength band, and the concentration of the quantum dot according to its particle size can be adjusted to control the color coordinates. Therefore, as shown in FIG. 22, the particle size and concentration of the quantum dot can be adjusted, such that the green light system emitted by the first quantum dot has a coordinate point falling on four chromaticity diagrams based on CIE 1931 ( 0.1270, 0.8037), (0.4117, 0.5861), (0.4197, 0.5316), and (0.2555, 0.5030) define the color coordinates in the region A, and the red light system emitted by the second quantum dot has a Color coordinates in region B defined by coordinate points (0.5448, 0.4544), (0.7200, 0.2800), (0.6427, 0.2905), and (0.4794, 0.4633) of the CIE 1931 chromaticity diagram. As shown in Fig. 22, the illuminating device package having this distribution has a relatively wide area compared to the product using the existing phosphor, and is 95% or more based on the National Television Standards Committee (NTSC) standard. Color reproducibility and very high light intensity.
如上所述，由於該量子點發射的光較強於內部有狹波長帶之一般螢光體所發射的光，該第一和第二量子點可具有落在進一步的狹區域。亦即，由該第一量子點所發射之綠色光係具有落於由四個基於CIE 1931色度圖之座標點(0.1270,0.8037)、(0.3700,0.6180)、(0.3700,0.5800)和(0.2500,0.5500)界定之區域A’內的顏色座標，且由該第二量子點所發射之紅色光係具有落於由四個基於CIE 1931色度圖之座標點(0.6000,0.4000)、(0.7200,0.2800)、(0.6427,0.2905)和(0.6000,0.4000)界定之區域B’內的顏色座標，因此可更提升色彩重現性(color reproducibility)。根據本實施例之該發光裝置封裝件100，可導致該發光裝置101具有內有特定範圍之主波長，並導致該第一和第二量子點具有落在特定區域內的顏色座標(基於CIE 1931色度圖)，因此，藉由該發光裝置101和該第一和第二量子點之結合而改善色彩重現性。As described above, since the quantum dots emit light that is stronger than light emitted by a general phosphor having a narrow wavelength band inside, the first and second quantum dots may have a further narrow region. That is, the green light emitted by the first quantum dot has a coordinate point (0.1270, 0.8037), (0.3700, 0.6180), (0.3700, 0.5800), and (0.2500) based on four CIE 1931 chromaticity diagrams. , 0.5500) defines the color coordinates in the region A', and the red light system emitted by the second quantum dot has a coordinate point (0.6000, 0.4000), (0.7200, which is based on four CIE 1931 chromaticity diagrams. The color coordinates in the area B' defined by 0.2800), (0.6427, 0.2905) and (0.6000, 0.4000) can further improve the color reproducibility. The light emitting device package 100 according to the present embodiment may cause the light emitting device 101 to have a specific range of dominant wavelengths therein, and cause the first and second quantum dots to have color coordinates falling within a specific region (based on CIE 1931) Chromaticity map), therefore, color reproducibility is improved by the combination of the illumination device 101 and the first and second quantum dots.
同時，該上述的發光裝置封裝件100可利用藍色發光二極體晶片作為該發光裝置101且量子點轉換藍色光的波長，從而產生紅色和綠色光；然而，本發明不受此限制。舉例來說，該發光裝置101可為紫外線(ultraviolet)發光二極體晶片，且可調整量子點之粒子尺寸和集中性，該量子點包括具有在藍色光波長帶內部之峰值波長的第一量子點、具有在綠色光波長帶內部之峰值波長的第二量子點，以及具有在紅色光波長帶內部之峰值波長的第三量子點。在此情況中，該發光裝置101，即，該紫外線發光二極體 晶片可作為用於該波長轉換部105發射白色光之激發(excitation)的光源。Meanwhile, the above-described light-emitting device package 100 can utilize a blue light-emitting diode wafer as the light-emitting device 101 and the quantum dots convert the wavelength of the blue light, thereby generating red and green light; however, the present invention is not limited thereto. For example, the light emitting device 101 can be an ultraviolet light emitting diode chip and can adjust the particle size and concentration of the quantum dots including the first quantum having a peak wavelength inside the blue light wavelength band. a second quantum dot having a peak wavelength inside the green light wavelength band and a third quantum dot having a peak wavelength inside the red light wavelength band. In this case, the light emitting device 101, that is, the ultraviolet light emitting diode The wafer can serve as a light source for excitation of the white light emitted by the wavelength converting portion 105.
在使用具有複數發光裝置封裝件100安裝其中之發光模組的情況中，每一發光裝置封裝件100包括具有該量子點密封於其中之波長轉換部105，可預期高可靠性。另外，由於以透鏡形狀提供該波長轉換部105和該密封部104，從而適當地調整光的方向角(orientation angle)，所以可提升光發射效率。相反地，在具有量子點之波長轉換部係一體成型地形成有關複數發光裝置之單件(single piece)的情況中，若部分密封部為有缺陷的，可能降低該整個模組之可靠度，且難以藉由改變該波長轉換部和該密封部而調整光的方向角。In the case of using a light-emitting module in which a plurality of light-emitting device packages 100 are mounted, each of the light-emitting device packages 100 includes a wavelength conversion portion 105 having the quantum dots sealed therein, and high reliability is expected. In addition, since the wavelength conversion portion 105 and the sealing portion 104 are provided in a lens shape, the orientation angle of the light is appropriately adjusted, so that the light emission efficiency can be improved. Conversely, in the case where a wavelength conversion portion having quantum dots is integrally formed to form a single piece of a plurality of light-emitting devices, if a portion of the sealing portion is defective, the reliability of the entire module may be lowered. It is also difficult to adjust the direction angle of the light by changing the wavelength conversion portion and the sealing portion.
第2圖係說明根據本發明之另一實施例之發光裝置封裝件的橫截面圖。請參照第2圖，根據本實施例之發光裝置封裝件200可包括發光裝置201、一對外部端子202a、202b、封裝體203、具有透鏡形狀的密封部204、波長轉換部205、以及透明囊封部206。可理解的是，以相同名詞定義之元件係為在先前實施例中所述之相同元件。下文中，將主要詳述不同的元件。Figure 2 is a cross-sectional view showing a light emitting device package in accordance with another embodiment of the present invention. Referring to FIG. 2, the light emitting device package 200 according to the present embodiment may include a light emitting device 201, a pair of external terminals 202a, 202b, a package body 203, a sealing portion 204 having a lens shape, a wavelength converting portion 205, and a transparent capsule. Seal 206. It will be understood that elements defined by the same terms are the same elements as described in the previous embodiments. In the following, different components will be mainly described in detail.
在本實施例中，可安置該發光裝置201在該封裝體203上，且連接至該發光裝置201之一對電極(未圖示)可安置在該發光裝置201之下部部分，不同於先前實施例，即，相對於該密封部204。因此，如第2圖所示，一對導電性導線W可具有至少部分埋藏於該封裝體203中之結構。在 此方式中，該對導電性導線W並未安置在發射光的路徑中，從而將可能由該對導電性導線W所造成的光發射效率劣化減到最小。該對外部端子202a、202b施加電子訊號至該發光裝置201，且可由該封裝體203之側邊表面延伸至其下部表面。在此情況中，一對連接部207a、207b，並非必要的，可進一步提供以便連接該導電性導線W至該外部端子202a、202b。In this embodiment, the light emitting device 201 can be disposed on the package body 203, and a pair of electrodes (not shown) connected to the light emitting device 201 can be disposed at a lower portion of the light emitting device 201, different from the previous implementation. For example, relative to the sealing portion 204. Therefore, as shown in FIG. 2, the pair of conductive wires W may have a structure at least partially buried in the package 203. in In this manner, the pair of conductive wires W are not disposed in the path of the emitted light, thereby minimizing degradation of light emission efficiency which may be caused by the pair of conductive wires W. The pair of external terminals 202a, 202b apply an electronic signal to the light emitting device 201, and may extend from a side surface of the package 203 to a lower surface thereof. In this case, a pair of connecting portions 207a, 207b, which are not necessary, may be further provided to connect the conductive wire W to the external terminals 202a, 202b.
根據本實施例，相同於第1圖之先前實施例，在使用具有複數發光裝置封裝件200安裝其中之發光模組的情況中，可預期高可靠性。另外，以透鏡形狀提供該波長轉換部205和該密封部204，從而適當地調整光的方向角(orientation angle)，如此可提升光發射效率。再者，該發光裝置201在其該下部部分可擁有具高反射性之材料(例如二氧化鈦)，並因此提升其光發射效率。在此情況中，使用矽氧樹脂作為具有光反射粒子之透明樹脂，像是二氧化鈦分散於其中，藉以可改善該發光裝置封裝件之可靠性，甚至在高溫或高溼氣的情況中。According to the present embodiment, in the same manner as the previous embodiment of Fig. 1, in the case of using the light-emitting module in which the plurality of light-emitting device packages 200 are mounted, high reliability can be expected. Further, the wavelength conversion portion 205 and the sealing portion 204 are provided in a lens shape, thereby appropriately adjusting the orientation angle of the light, so that the light emission efficiency can be improved. Further, the light-emitting device 201 can have a material having high reflectivity (for example, titanium oxide) in the lower portion thereof, and thus enhance its light emission efficiency. In this case, a silicone resin is used as a transparent resin having light-reflecting particles, such as titanium dioxide dispersed therein, whereby the reliability of the light-emitting device package can be improved even in the case of high temperature or high humidity.
下文中，將詳述一種製造第1和2圖之發光裝置封裝件之方法。Hereinafter, a method of manufacturing the light-emitting device packages of Figs. 1 and 2 will be described in detail.
第3和4圖係說明一種製造第1圖之發光裝置封裝件之方法的橫截面圖。如第3圖所示，為一種形成具有波長轉換部105密封其中的密封部104之方法的範例，該波長轉換部105包含量子點和用於該量子點分散之分散媒介，該量子點可沿著第一透明部分104a之內壁形成。之後，擠 壓該第一透明部分104a和具有與該第一透明部分104a相對應之形狀的第二透明部分104b，從而允許該波長轉換部105被密封於其之間。之後，如第4圖所示，形成該透明囊封部106於由該密封部104之內表面所形成空間中，該密封部104係使用矽氧樹脂或等等，且該透明囊封部106與該發光裝置101相結合。在製程效率方面，在該發光裝置封裝件之其他元件後，即，形成該導線架102a、102b、封裝體103、該導電性導線W全部，它們可以倒轉方式與密封部104相結合。3 and 4 are cross-sectional views showing a method of manufacturing the light-emitting device package of Fig. 1. As shown in FIG. 3, which is an example of a method of forming a sealing portion 104 having a wavelength converting portion 105 sealed therein, the wavelength converting portion 105 includes quantum dots and a dispersion medium for dispersion of the quantum dots, the quantum dots may be along The inner wall of the first transparent portion 104a is formed. After that, squeeze The first transparent portion 104a and the second transparent portion 104b having a shape corresponding to the first transparent portion 104a are pressed to allow the wavelength conversion portion 105 to be sealed therebetween. Thereafter, as shown in FIG. 4, the transparent encapsulation portion 106 is formed in a space formed by the inner surface of the sealing portion 104, and the sealing portion 104 is made of a silicone resin or the like, and the transparent encapsulation portion 106 is used. Combined with the illumination device 101. In terms of process efficiency, after the other components of the light emitting device package, that is, the lead frames 102a, 102b, the package body 103, and the conductive wires W are formed, they can be combined with the sealing portion 104 in an inverted manner.
第5至8圖係說明一種製造第2圖之發光裝置封裝件之方法的橫截面圖。在本實施例中，將敘述一種製造複數發光裝置封裝件之方法。首先，第5圖所示，除了以陣列形式提供該密封部204外，使用在第3圖之實施例中所述之方法，形成該密封部204以將該各別的波長轉換部205密封於其中。接著，如第6圖所示，形成該透明囊封部206以填充由該密封部204之內表面所界定的空間，且該透明囊封部206與該發光裝置201相結合。在本實施例中，該發光裝置201和該透明囊封部206之結合可於複數發光裝置201附著至載體薄片208之狀態中執行。該載體薄片208可為聚合物膜或等等，以使該發光裝置201為可附加的。5 to 8 are cross-sectional views showing a method of manufacturing the light-emitting device package of Fig. 2. In the present embodiment, a method of manufacturing a plurality of light-emitting device packages will be described. First, as shown in Fig. 5, in addition to providing the sealing portion 204 in an array form, the sealing portion 204 is formed to seal the respective wavelength converting portions 205 by the method described in the embodiment of Fig. 3. among them. Next, as shown in FIG. 6, the transparent encapsulation portion 206 is formed to fill the space defined by the inner surface of the sealing portion 204, and the transparent encapsulation portion 206 is combined with the light-emitting device 201. In the present embodiment, the combination of the light-emitting device 201 and the transparent encapsulation portion 206 can be performed in a state in which the plurality of light-emitting devices 201 are attached to the carrier sheet 208. The carrier sheet 208 can be a polymeric film or the like such that the illumination device 201 can be attached.
之後，該載體薄片208由該發光裝置201分離，從而提供曝露該發光裝置201。形成導電性導線W以與形成在該發光裝置201之已曝露表面上的該對電極(未圖示)產生連結。在此情況中，該導電性導線W可連結至形成在該密 封部204之表面上的該連接部207。如上所述，提供該連接部207用於與該外部端子產生連結；然而，依據本發明之實施例是可被省略。之後，如第8圖所示，可形成該封裝體203以便與該密封部204結合並覆蓋該發光裝置201及該導電性導線W。該封裝體203可具有內含光反射粒子，例如，二氧化鈦，分散在透明樹脂內之結構，且供由該發光裝置201所發射之光以安置該密封部204之方向而反射。在該封裝體203形成後，執行切割製程(dicing process)以形成個別的發光裝置封裝件。雖然未圖示，但是，關於每一該分離的發光裝置封裝件，可形成該外部端子於該封裝體203之側邊和下部表面上，從而形成如第2圖所示之結構。該發光裝置封裝件之該外部端子的形成可在本實施例所述之切割製程之後或者在下面參照第9至13圖所描述之切割製程之前來執行。Thereafter, the carrier sheet 208 is separated by the light emitting device 201 to provide exposure to the light emitting device 201. The conductive wire W is formed to be coupled to the pair of electrodes (not shown) formed on the exposed surface of the light-emitting device 201. In this case, the conductive wire W can be joined to form the dense The connecting portion 207 on the surface of the sealing portion 204. As described above, the connection portion 207 is provided for connection with the external terminal; however, an embodiment according to the present invention may be omitted. Thereafter, as shown in FIG. 8, the package body 203 can be formed to be combined with the sealing portion 204 to cover the light-emitting device 201 and the conductive wire W. The package body 203 may have a structure containing light-reflecting particles, for example, titanium dioxide, dispersed in a transparent resin, and the light emitted by the light-emitting device 201 is reflected in a direction in which the sealing portion 204 is disposed. After the package 203 is formed, a dicing process is performed to form individual light emitting device packages. Although not shown, for each of the separate light-emitting device packages, the external terminals may be formed on the side and lower surfaces of the package 203 to form a structure as shown in FIG. The formation of the external terminal of the light-emitting device package can be performed after the cutting process described in this embodiment or before the cutting process described below with reference to Figures 9 to 13.
如第9圖所述，形成密封部304以具有使用前述方法將波長轉換部305密封在密封部304之內的結構，在第一透明部分304a內形成該波長轉換部305且藉由擠壓製程使第二透明部分304b對其附接。在本實施例中，該密封部304可具有長方體(rectangular parallelepiped)形狀而不是凸向透鏡形狀，說明了該密封部304可被修改成許多形狀。由於該密封部304具有該長方體形狀，在先前實施例所述之該透明囊封部可能不需要。As shown in FIG. 9, the sealing portion 304 is formed to have a structure in which the wavelength converting portion 305 is sealed within the sealing portion 304 by the aforementioned method, and the wavelength converting portion 305 is formed in the first transparent portion 304a by the extrusion process. The second transparent portion 304b is attached thereto. In the present embodiment, the sealing portion 304 may have a rectangular parallelepiped shape instead of a convex lens shape, indicating that the sealing portion 304 can be modified into a plurality of shapes. Since the sealing portion 304 has the rectangular parallelepiped shape, the transparent encapsulation portion described in the previous embodiment may not be required.
接著，如第10圖所示，將複數發光裝置301配置在載體薄片308上，且形成導電性導線W、外部端子302及連 接部307之間產生連接。在該導電性導線W和該外部端子302彼此直接連接的情況中，可不需要該連接部307。之後，如第11圖所示，形成封裝體303以覆蓋該發光裝置301。之後，如第12圖所示，具有該波長轉換部305於其中之該密封部304是附接至該封裝體303，以安置在由該發光裝置301所發射光之路徑中。在該密封部304附接之後，執行切割製程以分割該發光裝置301成為封裝件單元。得到如第13圖所示之個別的發光裝置封裝件300。於此，該個別的發光裝置封裝件300可具有一對外部端子302a、302b以及一對連接部307a、307b。Next, as shown in FIG. 10, the plurality of light-emitting devices 301 are disposed on the carrier sheet 308, and the conductive wires W, the external terminals 302, and the connections are formed. A connection is made between the contacts 307. In the case where the conductive wire W and the external terminal 302 are directly connected to each other, the connection portion 307 may not be required. Thereafter, as shown in FIG. 11, a package 303 is formed to cover the light-emitting device 301. Thereafter, as shown in FIG. 12, the sealing portion 304 having the wavelength converting portion 305 therein is attached to the package body 303 to be disposed in the path of the light emitted by the light emitting device 301. After the sealing portion 304 is attached, a cutting process is performed to divide the light emitting device 301 into a package unit. An individual light emitting device package 300 as shown in Fig. 13 is obtained. Here, the individual light emitting device package 300 may have a pair of external terminals 302a, 302b and a pair of connecting portions 307a, 307b.
第14至17圖係說明根據本發明之另一實施例之一種製造發光裝置封裝件之方法的橫截面圖。在本實施例中，如第14圖所示，發光裝置401係直接安置在部分密封部404上，從而達到製程簡化。具體地，在第一透明部分404a內形成波長轉換部405且之後第二透明部分404b對其擠壓，從而形成該密封部404，係相似於在先前實施例所述之方法；然而，該發光裝置401和元件施加電子訊號於其中，即，導電性導線W和連接部407係直接形成在該第二透明部分404b上。在此情況中，該密封部404可具有凸向透鏡形狀，如第14圖所示，或如長方體形狀的其他形狀。14 through 17 are cross-sectional views illustrating a method of fabricating a light emitting device package in accordance with another embodiment of the present invention. In the present embodiment, as shown in Fig. 14, the light-emitting device 401 is directly disposed on the partial sealing portion 404, thereby achieving process simplification. Specifically, the wavelength conversion portion 405 is formed in the first transparent portion 404a and then the second transparent portion 404b is pressed thereto to form the sealing portion 404, which is similar to the method described in the previous embodiment; however, the illumination The device 401 and the component apply an electronic signal therein, that is, the conductive wire W and the connecting portion 407 are directly formed on the second transparent portion 404b. In this case, the sealing portion 404 may have a convex lens shape as shown in Fig. 14, or other shapes such as a rectangular parallelepiped shape.
同時，在第14圖中，在安置該發光裝置401於該第二透明部分404b上之後，從而密封該波長轉換部405。然而，該密封製程可於安置該發光裝置401於該第二透明部分404b上之前事先執行。在此方式中，如第15圖所示的結 合該密封部404及該發光裝置401。接著，如第16圖所示，形成封裝體403。在本實施例中，該封裝體403係對於該個別的發光裝置401分別地形成。然而，並非限制本發明。如先前實施例所述，該封裝體可對該個別的發光裝置401之整體一體成型地形成單件，且之後藉由後續切割製程分割成為封裝件單元。之後，如第17圖所示，在該封裝體403之表面上形成外部端子407，且執行切割製程以分割該發光裝置401成為封裝件單元，並因此形成個別的發光裝置封裝件。在第17圖不同方式中，可在切割製程之後形成該外部端子407，且該外部端子407除了可延伸至該封裝體403之其他表面外還有其側邊表面。Meanwhile, in Fig. 14, after the light-emitting device 401 is placed on the second transparent portion 404b, the wavelength conversion portion 405 is sealed. However, the sealing process can be performed before the illuminating device 401 is placed on the second transparent portion 404b. In this way, the knot shown in Figure 15 The sealing portion 404 and the light emitting device 401 are combined. Next, as shown in Fig. 16, a package 403 is formed. In the present embodiment, the package 403 is formed separately for the individual light-emitting devices 401. However, it is not intended to limit the invention. As described in the previous embodiment, the package body can be integrally formed into a single piece of the individual light-emitting device 401, and then divided into package units by a subsequent cutting process. Thereafter, as shown in Fig. 17, an external terminal 407 is formed on the surface of the package 403, and a cutting process is performed to divide the light-emitting device 401 into a package unit, and thus individual light-emitting device packages are formed. In the different manner of Fig. 17, the external terminal 407 can be formed after the cutting process, and the external terminal 407 has its side surface in addition to the other surfaces of the package 403.
第18至20圖係說明根據本發明之另一實施例之發光裝置封裝件的橫截面圖。在第18圖之實施例中，在發光裝置501之至少一表面上安置密封部504，該發光裝置501提供由此的光發射路徑，且具有量子點之波長轉換部505係密封在如上述的該密封部504內。該發光裝置501可具其中堆疊有板材501a、第一導電型半導體層501b、主動層501c、以及第二導電型半導體層501d的發光二極體結構。在該發光裝置501上以相對於該密封部504之方向安置一對電極。如第18圖所示，該對電極可為凸塊銲球(bump balls)。在本實施例中之該發光裝置封裝件500，如第19圖所示，可藉由覆晶接合安裝在板材509上，且由該發光裝置501所發射之光可傳遞經過該波長轉換部505，並向外發射出。連接該對凸塊銲球B至形成於該板材509上的 佈線圖樣510a、510b。於此，該發光裝置封裝件可以第18圖之結構分割為如第19圖所示之封裝件單元；或者，如未分割的第18圖所示結構之狀態安裝在該板材509上。18 through 20 are cross-sectional views illustrating a light emitting device package in accordance with another embodiment of the present invention. In the embodiment of Fig. 18, a sealing portion 504 is disposed on at least one surface of the light emitting device 501, the light emitting device 501 provides a light emitting path therefrom, and the wavelength converting portion 505 having quantum dots is sealed as described above. Inside the sealing portion 504. The light-emitting device 501 may have a light-emitting diode structure in which a plate member 501a, a first conductive type semiconductor layer 501b, an active layer 501c, and a second conductive type semiconductor layer 501d are stacked. A pair of electrodes are disposed on the light emitting device 501 in a direction relative to the sealing portion 504. As shown in Fig. 18, the pair of electrodes may be bump balls. The illuminating device package 500 in this embodiment, as shown in FIG. 19, can be mounted on the plate 509 by flip chip bonding, and the light emitted by the illuminating device 501 can be transmitted through the wavelength converting portion 505. And fired out. Connecting the pair of bump solder balls B to the plate 509 Wiring patterns 510a, 510b. Here, the light-emitting device package may be divided into the package unit as shown in Fig. 19 by the structure of Fig. 18; or, the plate member 509 may be mounted in the state of the structure shown in Fig. 18 which is not divided.
第20圖之發光裝置封裝件600包括複數發光裝置601、以及密封部604和波長轉換部605係一體成型地形成有關於該複數發光裝置601之單件。該個別的發光裝置601可具有一對電極，例如，一對凸塊銲球B。該凸塊銲球B可連接至分別地形成在封裝體603之表面上的外部端子602。於此，該凸塊銲球B和該外部端子602可以考慮該發光裝置601之間的連接而適當地安置(串聯連接、並聯連接或其組合)。第20圖係表示該發光裝置601以串聯彼此連接。同時，除了該密封部604附接於該發光裝置601之表面，形成該封裝體603以覆蓋該發光裝置601之剩餘表面。該封裝體603可包括以安置該密封部604之方向反射由該發光裝置601所發射之光的光反射材料。The light-emitting device package 600 of FIG. 20 includes a plurality of light-emitting devices 601, and a sealing portion 604 and a wavelength conversion portion 605 are integrally formed with a single piece about the plurality of light-emitting devices 601. The individual illumination device 601 can have a pair of electrodes, such as a pair of bump solder balls B. The bump solder balls B may be connected to external terminals 602 formed on the surface of the package body 603, respectively. Here, the bump solder ball B and the external terminal 602 may be appropriately disposed in consideration of the connection between the light-emitting devices 601 (series connection, parallel connection, or a combination thereof). Fig. 20 shows that the light-emitting devices 601 are connected to each other in series. Meanwhile, the package body 603 is formed to cover the remaining surface of the light-emitting device 601 except that the sealing portion 604 is attached to the surface of the light-emitting device 601. The package 603 may include a light reflective material that reflects light emitted by the light emitting device 601 in a direction in which the sealing portion 604 is disposed.
如本實施例中所述，該密封部604和該波長轉換部605係一體成型地形成有關於該複數發光裝置601之單件，這樣由該發光裝置封裝件600整體所發射之光的顏色座標是一致的。當混合不同顏色的量子點發射光，在其混合比率的變化可導致觀測者看見具不同波長的光。為了避免這樣，需以精確比率及具精確集中性來執行混合製程。在此混合製程中，光發射效率和該量子點之集中性一樣需納入考量。在使用以陣列形式所提供個別的發光裝置封裝件之白色光源的情況中，具混合有成形樹脂(molding resin) 之量子點的每一封裝件，對調整該量子點的集中性、一致性和混合比率是有限制，且如此，可產生在該發光裝置封裝件之間顏色座標的變化。然而，在本實施例之該發光裝置封裝件600中，該一體成型地形成密封部604和波長轉換部605係分別地有關於該發光裝置601而準備，藉以得到該發光裝置封裝件600整體一致的顏色座標。As described in the embodiment, the sealing portion 604 and the wavelength converting portion 605 are integrally formed with a single piece about the plurality of light emitting devices 601 such that the color coordinates of the light emitted by the light emitting device package 600 as a whole are formed. It is consistent. When a quantum dot of a different color is mixed to emit light, a change in the mixing ratio thereof may cause the observer to see light having a different wavelength. In order to avoid this, the mixing process needs to be performed with precise ratio and precise concentration. In this hybrid process, the light emission efficiency and the concentration of the quantum dots need to be taken into consideration. In the case of using a white light source in which individual light-emitting device packages are provided in an array form, mixed with a molding resin Each package of quantum dots has limitations in adjusting the concentration, uniformity, and mixing ratio of the quantum dots, and as such, changes in color coordinates between the illuminator packages can be produced. However, in the light-emitting device package 600 of the present embodiment, the integrally formed sealing portion 604 and the wavelength conversion portion 605 are separately prepared with respect to the light-emitting device 601, thereby obtaining the overall uniformity of the light-emitting device package 600. Color coordinates.
第23圖係說明根據本發明之一實施例之發光裝置封裝件之配置範例的截面圖。請參照第23圖，照明設備700可包括發光模組701、具該發光模組安置其中之結構704、以及電源供應單元703。該發光模組701可具有至少一藉由前面實施例所提出之方法而得到之發光裝置封裝件702。該電源供應單元703可包括接收電源之介面705以及控制電源供應至該發光模組701之電源控制部706。於此，該介面705可包括熔絲(fuse)阻隔過量電流以及電磁干擾(electromagnetic interference，EMI)過濾阻隔EMI訊號。Figure 23 is a cross-sectional view showing an example of the arrangement of a light-emitting device package according to an embodiment of the present invention. Referring to FIG. 23, the lighting device 700 can include a lighting module 701, a structure 704 with the lighting module disposed therein, and a power supply unit 703. The light emitting module 701 can have at least one light emitting device package 702 obtained by the method proposed in the previous embodiment. The power supply unit 703 can include an interface 705 for receiving power and a power control unit 706 for controlling power supply to the lighting module 701. Herein, the interface 705 can include a fuse to block excessive current and an electromagnetic interference (EMI) filter to block the EMI signal.
當該電源控制部706接收交流電源(AC power)作為輸入電源時，該電源控制部706可具有整流部分(rectifying portion)轉換AC電源成為直流電源(DC power)，且定壓控制部分(constant voltage controlling portion)轉換該DC電源成為適合該發光模組701的電壓。若該電源供應單元703可為DC電源來源，像是電池/蓄電池，具有適合該發光模組701的電壓，則可省略該整流部分和該定壓控制部分。在利用AC發光二極體裝置作為該發光模組701的情況中，可直接提供AC電源至該發光模組701，在此情況下， 可省略該整流部分和該定壓控制部分。另外，該電源控制部706可控制色彩熱度(color temperature)或等等，這樣根據人類敏感性可達到照度位準(illumination levels)的多變性。同樣地，該電源供應單元703可包括比較由該發光裝置封裝件702所發射之光的數量與預定光的數量之回饋電路，以及儲存關於所需明度(brightness)或現色特性(color rendering properties)之記憶體。When the power source control unit 706 receives AC power as an input power source, the power source control unit 706 may have a rectifying portion to convert the AC power source into a DC power source, and a constant voltage control portion (constant voltage) The controlling portion converts the DC power source into a voltage suitable for the lighting module 701. If the power supply unit 703 can be a DC power source, such as a battery/battery, having a voltage suitable for the lighting module 701, the rectifying portion and the constant voltage control portion can be omitted. In the case where the AC light emitting diode device is used as the light emitting module 701, AC power can be directly supplied to the light emitting module 701. In this case, The rectifying portion and the constant voltage control portion may be omitted. In addition, the power control unit 706 can control the color temperature or the like so that the variability of illumination levels can be achieved according to human sensitivity. Likewise, the power supply unit 703 can include a feedback circuit that compares the amount of light emitted by the light emitting device package 702 with the amount of predetermined light, and stores information about desired brightness or color rendering properties (color rendering properties). ) The memory.
該照明設備700可用於作為背光單元或者用於在如具顯示面板之液晶顯示裝置(LCD)之顯示裝置、如平板照明裝置或等等之照明設備、以及如路燈、電信號(electric sign)或等等之戶外照明設備的燈具(lamp)。該照明設備700也可使用在用於像是汽車、船、飛機或等等之交通工具的各式各樣照明裝置。再者，該照明設備700也可使用在像是電視、冰箱或等等器具，以及醫療設備或等等。The lighting device 700 can be used as a backlight unit or for a display device such as a liquid crystal display device (LCD) having a display panel, a lighting device such as a flat panel lighting device or the like, and such as a street lamp, an electric sign or Wait for the lighting of outdoor lighting equipment. The lighting device 700 can also be used in a wide variety of lighting devices for vehicles such as automobiles, boats, airplanes, and the like. Furthermore, the lighting device 700 can also be used in appliances such as televisions, refrigerators, and the like, as well as medical devices or the like.
如上面所提出，根據本發明之實施例，發光裝置封裝件使用量子點作為波長轉換部從而達到較好色彩重現性及光發射效率，且藉由調整該量子點之粒子尺寸及集中性來促進顏色座標的控制。具有該量子點分散其中之有機溶劑或聚合物可密封在密封部中從而阻擋氧氣或溼氣的影響。因此，甚至在高溫氣氛下，或在高溫及高溼度狀況下，發光模組可穩固地操作。As proposed above, according to an embodiment of the present invention, a light-emitting device package uses quantum dots as a wavelength conversion portion to achieve better color reproducibility and light emission efficiency, and by adjusting the particle size and concentration of the quantum dots. Promote control of color coordinates. The organic solvent or polymer having the quantum dots dispersed therein can be sealed in the sealing portion to block the influence of oxygen or moisture. Therefore, the light-emitting module can be stably operated even under a high temperature atmosphere or under high temperature and high humidity conditions.
另外，使用這樣的發光裝置封裝件在照明設備、顯示設備或等等，藉以可提升該設備的可靠度及效率。In addition, the use of such a light-emitting device package in a lighting device, a display device or the like can thereby improve the reliability and efficiency of the device.
雖然本發明已經顯示和說明了相關之實施例，但是很 顯然的，對於熟悉此項技術者而言，可以作修飾和改變而仍不偏離由所附申請專利範圍所定義之本發明之精神與範疇。Although the present invention has shown and described related embodiments, it is It is apparent that those skilled in the art can make modifications and changes without departing from the spirit and scope of the invention as defined by the appended claims.
100、200、300、500、600、702‧‧‧發光裝置封裝件100, 200, 300, 500, 600, 702‧‧‧ illuminating device packages
101、201、301、401、501、601‧‧‧發光裝置101, 201, 301, 401, 501, 601‧‧ ‧ illuminating devices
102a、102b‧‧‧導線架102a, 102b‧‧‧ lead frame
103、203、303、403、603‧‧‧封裝體103, 203, 303, 403, 603‧‧‧ package
104、204、304、404、504、604‧‧‧密封部104, 204, 304, 404, 504, 604‧‧‧ Sealing Department
104a、104b‧‧‧透明部分104a, 104b‧‧‧Transparent part
105、205、305、405、505、605‧‧‧波長轉換部105, 205, 305, 405, 505, 605‧‧‧ wavelength conversion unit
106、206‧‧‧透明囊封部106, 206‧‧‧ Transparent encapsulation
202a、202b、302、302a、302b、407、602‧‧‧外部端子202a, 202b, 302, 302a, 302b, 407, 602‧‧‧ external terminals
207、207a、207b、307、307a、307b‧‧‧連接部207, 207a, 207b, 307, 307a, 307b‧‧‧ Connections
208、308‧‧‧載體薄片208, 308‧‧‧ carrier sheets
304a、404a‧‧‧第一透明部分304a, 404a‧‧‧ first transparent part
304b、404b‧‧‧第二透明部分304b, 404b‧‧‧ second transparent part
501a、509‧‧‧板材501a, 509‧‧‧ plates
501b‧‧‧第一導電型半導體層501b‧‧‧First Conductive Semiconductor Layer
501c‧‧‧主動層501c‧‧‧ active layer
501d‧‧‧第二導電型半導體層501d‧‧‧Second conductive semiconductor layer
510a、510b‧‧‧佈線圖樣510a, 510b‧‧‧ wiring pattern
700‧‧‧照明設備700‧‧‧Lighting equipment
701‧‧‧發光模組701‧‧‧Lighting module
703‧‧‧電源供應單元703‧‧‧Power supply unit
704‧‧‧結構704‧‧‧structure
705‧‧‧介面705‧‧" interface
706‧‧‧電源控制部706‧‧‧Power Control Department
B‧‧‧凸塊銲球B‧‧‧Bump solder balls
W‧‧‧導電性導線W‧‧‧ Conductive wire
由以上之詳細說明，配合所附圖式，將更清楚了解本發明之上述和其他的態樣、特徵和其他的優點，其中：第1圖係說明根據本發明之一實施例之發光裝置封裝件的橫截面圖；第2圖係說明根據本發明之另一實施例之發光裝置封裝件的橫截面圖；第3和4圖係說明一種製造第1圖之發光裝置封裝件之方法的橫截面圖；第5至8圖係說明一種製造第2圖之發光裝置封裝件之方法的橫截面圖；第9至13圖係說明根據本發明之另一實施例之一種製造發光裝置封裝件之方法的橫截面圖；第14至17圖係說明根據本發明之另一實施例之一種製造發光裝置封裝件之方法的橫截面圖；第18至20圖係說明根據本發明之另一實施例之發光裝置封裝件的橫截面圖；第21圖係表示根據本發明之一實施例之取決於由發光裝置封裝件所發射光之波長帶的光度之圖式；第22圖係表示根據本發明之一實施例之由發光裝置封裝件所發射之光的顏色座標之色度圖；以及 第23圖係說明根據本發明之一實施例之發光裝置封裝件之配置範例的截面圖。The above and other aspects, features, and other advantages of the present invention will become more apparent from the aspects of the appended claims. A cross-sectional view of a light-emitting device package according to another embodiment of the present invention; and FIGS. 3 and 4 illustrate a cross-section of a method of manufacturing the light-emitting device package of FIG. FIG. 5 to FIG. 8 are cross-sectional views showing a method of manufacturing the light-emitting device package of FIG. 2; and FIGS. 9 to 13 illustrate a method of manufacturing a light-emitting device package according to another embodiment of the present invention. A cross-sectional view of a method; FIGS. 14 to 17 are cross-sectional views illustrating a method of fabricating a light emitting device package in accordance with another embodiment of the present invention; and FIGS. 18 to 20 illustrate another embodiment in accordance with the present invention. A cross-sectional view of a light emitting device package; Fig. 21 is a view showing a luminosity depending on a wavelength band of light emitted by a light emitting device package according to an embodiment of the present invention; and Fig. 22 is a view showing a light according to the present invention one FIG chromaticity coordinates of the color of the light emitting device package of the embodiment of the emitted light; and Figure 23 is a cross-sectional view showing an example of the arrangement of a light-emitting device package according to an embodiment of the present invention.
100‧‧‧發光裝置封裝件100‧‧‧Lighting device package
101‧‧‧發光裝置101‧‧‧Lighting device
102a、102b‧‧‧導線架102a, 102b‧‧‧ lead frame
103‧‧‧封裝體103‧‧‧Package
104‧‧‧密封部104‧‧‧ Sealing Department
104a、104b‧‧‧透明部分104a, 104b‧‧‧Transparent part
105‧‧‧波長轉換部105‧‧‧wavelength conversion unit
106‧‧‧透明囊封部106‧‧‧Transparent encapsulation
W‧‧‧導電性導線W‧‧‧ Conductive wire
Claims (36)
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| Application Number | Priority Date | Filing Date | Title |
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| US35442910P | 2010-06-14 | 2010-06-14 | |
| KR1020100102419A KR20110136676A (en) | 2010-06-14 | 2010-10-20 | Light emitting device package using quantum dot, illumination apparatus and dispaly apparatus |
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| TWI479703B true TWI479703B (en) | 2015-04-01 |
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| Country | Link |
|---|---|
| JP (1) | JP5881318B2 (en) |
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