TWI479540B - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
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- TWI479540B TWI479540B TW096127302A TW96127302A TWI479540B TW I479540 B TWI479540 B TW I479540B TW 096127302 A TW096127302 A TW 096127302A TW 96127302 A TW96127302 A TW 96127302A TW I479540 B TWI479540 B TW I479540B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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Description
本發明主張2006年7月26日申請之韓國專利申請案第10－2006－0070373號之權利，其以引用的方式併入本文中。The present invention claims the benefit of Korean Patent Application No. 10-2006-0070373, filed on Jul. 26, 2006, which is incorporated herein by reference.
本發明係關於一種用於製造半導體設備或平板顯示器之裝置，且更明確地說，本發明係關於一種使用電漿來處理例如晶圓或玻璃之基板的基板處理裝置。BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to an apparatus for manufacturing a semiconductor device or a flat panel display, and more particularly to a substrate processing apparatus for processing a substrate such as a wafer or glass using plasma.
一般而言，例如液晶顯示器或電漿顯示面板之平板顯示器或半導體設備係藉由基板上之薄膜沈積製程、光微影製程以及蝕刻製程來形成預定電路圖案而製造。每一製程均在已設置最佳條件之基板處理裝置中執行。In general, a flat panel display or a semiconductor device such as a liquid crystal display or a plasma display panel is fabricated by forming a predetermined circuit pattern by a thin film deposition process, a photolithography process, and an etching process on a substrate. Each process is performed in a substrate processing apparatus in which optimum conditions have been set.
近來，使用電漿之基板處理裝置已廣泛用於沈積或蝕刻薄膜。Recently, substrate processing apparatuses using plasma have been widely used for depositing or etching thin films.
圖1為說明根據相關技術之使用電漿來沈積薄膜的電漿增強化學氣相沈積(plasma enhanced chemical vapor deposition，PECVD)裝置之視圖。1 is a view illustrating a plasma enhanced chemical vapor deposition (PECVD) apparatus for depositing a thin film using plasma according to the related art.
圖1中，PECVD裝置10包含腔室11、基板支撐件12以及電漿電極14。腔室11使腔室內之內力保持低於氣動力(atmospheric force)。在腔室11之下壁處形成出口18。In FIG. 1, a PECVD apparatus 10 includes a chamber 11, a substrate support 12, and a plasma electrode 14. The chamber 11 keeps the internal force within the chamber below the atmospheric force. An outlet 18 is formed at the lower wall of the chamber 11.
基板支撐件12設置於腔室11中，且基板S裝載於基板支撐件12上。基板支撐件12充當下電極用以在腔室11中產生電漿。基板支撐件12可藉由軸12a而上下移動，軸12a與基板支撐件12之下表面的中心結合。The substrate support 12 is disposed in the chamber 11 and the substrate S is loaded on the substrate support 12. The substrate support 12 serves as a lower electrode for generating plasma in the chamber 11. The substrate support 12 is vertically movable by a shaft 12a which is coupled to the center of the lower surface of the substrate support 12.
電漿電極14設置於基板支撐件12上方。射頻(radio frequency，RF)功率自RF功率源17施加至電漿電極14。電漿電極14可由鋁(Al)形成。阻抗匹配系統16連接於電漿電極14與RF功率源17之間。The plasma electrode 14 is disposed above the substrate support 12. Radio frequency (RF) power is applied from the RF power source 17 to the plasma electrode 14. The plasma electrode 14 may be formed of aluminum (Al). The impedance matching system 16 is coupled between the plasma electrode 14 and the RF power source 17.
氣體供應管線15連接至電漿電極14之中心，且氣體分配板13與電漿電極14之下側耦合，使得在氣體分配板13與電漿電極14之間界定氣體分配區。氣體供應管線15連接至氣體分配區。氣體分配板13為包含複數個注入孔之鋁塊，且氣體分配板13之周邊固定在電漿電極14的下側。由於氣體分配板13連接至電漿電極14且由與電漿電極14相同之材料(例如，鋁)形成，所以氣體分配板13與電漿電極14具有相同電位。因此，氣體分配板13實質上與電漿電極14一起充當上電極用以產生電漿。在氣體分配板13與基板支撐件12之間界定反應區。The gas supply line 15 is connected to the center of the plasma electrode 14, and the gas distribution plate 13 is coupled to the lower side of the plasma electrode 14 such that a gas distribution zone is defined between the gas distribution plate 13 and the plasma electrode 14. A gas supply line 15 is connected to the gas distribution zone. The gas distribution plate 13 is an aluminum block including a plurality of injection holes, and the periphery of the gas distribution plate 13 is fixed to the lower side of the plasma electrode 14. Since the gas distribution plate 13 is connected to the plasma electrode 14 and is formed of the same material (for example, aluminum) as the plasma electrode 14, the gas distribution plate 13 has the same potential as the plasma electrode 14. Therefore, the gas distribution plate 13 substantially acts as an upper electrode together with the plasma electrode 14 to generate plasma. A reaction zone is defined between the gas distribution plate 13 and the substrate support 12.
電漿電極14之邊緣設置於電極支撐單元19上，電極支撐單元19可能是自腔室11之側壁向腔室11內部突出，或可能是腔室11的側壁之上部分。由於腔室11接地，所以腔室11應與施加有RF功率之電漿電極14及氣體分配板13分離。為此，可將絕緣體插置於電極支撐單元19與電漿電極14之間。The edge of the plasma electrode 14 is disposed on the electrode supporting unit 19, which may protrude from the side wall of the chamber 11 toward the inside of the chamber 11, or may be a portion above the side wall of the chamber 11. Since the chamber 11 is grounded, the chamber 11 should be separated from the plasma electrode 14 and the gas distribution plate 13 to which RF power is applied. To this end, an insulator can be interposed between the electrode supporting unit 19 and the plasma electrode 14.
另一方面，由於電漿電極14及氣體分配板13的設置結構而在氣體分配板13周圍形成間隙。該間隙被電極支撐單元19之一側、氣體分配板13之一側以及電漿電極14所包圍。該間隙連接至氣體分配板13與基板支撐件12之間的反應區。On the other hand, a gap is formed around the gas distribution plate 13 due to the arrangement of the plasma electrode 14 and the gas distribution plate 13. This gap is surrounded by one side of the electrode supporting unit 19, one side of the gas distribution plate 13, and the plasma electrode 14. This gap is connected to the reaction zone between the gas distribution plate 13 and the substrate support 12.
如上文所述，將RF功率施加至氣體分配板13及電漿電極14，且電極支撐單元19連接至接地之腔室11的側壁或為側壁的上部部分。因此，當將RF功率施加至電漿電極14時，由於電壓差及/或間隙中的反應氣體而可能產生電弧或電漿放電。電弧或電漿放電可能引起RF功率之損失及造成氣體分配板13之損壞。此外，可能在間隙中或周圍沈積薄膜且可能產生微粒。As described above, RF power is applied to the gas distribution plate 13 and the plasma electrode 14, and the electrode support unit 19 is connected to the side wall of the grounded chamber 11 or the upper portion of the side wall. Therefore, when RF power is applied to the plasma electrode 14, an arc or plasma discharge may occur due to a voltage difference and/or a reaction gas in the gap. Arc or plasma discharge can cause loss of RF power and damage to the gas distribution plate 13. In addition, it is possible to deposit a film in or around the gap and possibly generate particles.
為防止電弧或電漿放電，可將絕緣體20***間隙中，如圖1中所示。絕緣體20可由不傳導物質或具有相對較大電阻率的材料形成，例如鐵氟龍(Teflon)、陶瓷或其它工程塑膠。絕緣體20越厚，絕緣效果越高。To prevent arcing or plasma discharge, the insulator 20 can be inserted into the gap as shown in FIG. The insulator 20 may be formed of a non-conducting material or a material having a relatively large electrical resistivity, such as Teflon, ceramic or other engineering plastic. The thicker the insulator 20, the higher the insulation effect.
然而，絕緣體20可能受腔室11中之金屬組件的熱膨脹的影響。因此，對於絕緣體20之材料及設計存在諸多限制。However, the insulator 20 may be affected by the thermal expansion of the metal components in the chamber 11. Therefore, there are many limitations on the material and design of the insulator 20.
因此，本發明針對一種防止不同電位表面之間的電弧或電漿放電之基板處理裝置。Accordingly, the present invention is directed to a substrate processing apparatus that prevents arcing or plasma discharge between different potential surfaces.
本發明之另一目的在於提供一種防止在不同電位表面之間產生微粒之基板處理裝置。Another object of the present invention is to provide a substrate processing apparatus that prevents generation of particles between different potential surfaces.
本發明之另一目的在於提供一種防止裝置元件損壞的基板處理裝置。Another object of the present invention is to provide a substrate processing apparatus that prevents damage to device components.
本發明之其它特徵及優點將在以下描述中闡釋，且自描述中將部分地顯而易見，或可藉由實踐本發明來瞭解。將藉由在書面描述及其申請專利範圍以及隨附圖式中特別指出之結構來實現及獲得本發明之目的及其它優點。Other features and advantages of the invention will be set forth in the description which follows, The objectives and other advantages of the invention will be realized and attained by <RTIgt;
為實現該等及其它優點且根據本發明之目的，如所體現並廣泛描述的，基板處理裝置包含：腔室，其具有第一電位；第一電極，其處於該腔室中且具有第二電位，其中第一電極與腔室以間隙間隔開；第二電極，其在腔室中與第一電極間隔開，其中反應區界定於第一電極與第二電極之間且連接至間隙；絕緣體，其設置於間隙中，其中絕緣體包含沿第一方向彼此間隔開之第一部件及第二部件；以及緩衝絕緣體，其處於第一部件與第二部件之間。To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, a substrate processing apparatus includes a chamber having a first potential, a first electrode in the chamber and having a second a potential, wherein the first electrode is spaced apart from the chamber by a gap; a second electrode spaced apart from the first electrode in the chamber, wherein the reaction region is defined between the first electrode and the second electrode and connected to the gap; the insulator Provided in the gap, wherein the insulator comprises a first component and a second component spaced apart from each other in a first direction; and a buffer insulator between the first component and the second component.
在另一態樣中，基板處理裝置包含：腔室；兩個電位表面，其處於腔室中，該等電位表面具有不同的電位且彼此之間以間隙間隔開；絕緣體，其設置於間隙中，其中絕緣體包含彼此間隔開之第一部件及第二部件；以及緩衝絕緣體，其處於第一部件與第二部件之間。In another aspect, the substrate processing apparatus includes: a chamber; two potential surfaces in the chamber, the equipotential surfaces having different potentials and spaced apart from each other; and an insulator disposed in the gap Wherein the insulator comprises a first component and a second component spaced apart from each other; and a buffer insulator between the first component and the second component.
應理解，前述一般描述及以下詳細描述均為例示性及解釋性的且用以提供所主張之本發明的進一步解釋。It is to be understood that the foregoing general description
現將詳細參照較佳例示性實施例，其實例在隨附圖式中說明。Reference will now be made in detail to the preferred exemplary embodiments embodiments
本發明係為了使基板處理裝置中之不同電位的表面完全絕緣，且並不限制氣體分配板及電漿電極之結構。更確切地說，本發明係為了使在基板處理裝置或腔室中的兩個具有不同電位的構件或兩個電位表面絕緣。本發明並不限於下文將要解釋之設置於氣體分配板與電極之間之絕緣構件。The present invention is intended to completely insulate the surfaces of different potentials in the substrate processing apparatus, and does not limit the structure of the gas distribution plate and the plasma electrode. More specifically, the invention is intended to insulate two members or two potential surfaces having different potentials in a substrate processing apparatus or chamber. The present invention is not limited to the insulating member disposed between the gas distribution plate and the electrode, which will be explained later.
本發明之基板處理裝置可具有與圖1的結構相類似之結構。與相關技術相同的部件可具有相同參考符號，且可省略對相同部件之解釋。The substrate processing apparatus of the present invention may have a structure similar to that of FIG. The same components as those of the related art may have the same reference symbols, and the explanation of the same components may be omitted.
為了解決由於基板處理裝置中之金屬組件的熱膨脹而引起之問題，可將絕緣體20分成若干個部件，且可在部件之間設置緩衝空間。尤其當絕緣體20由鐵氟龍形成時，可能更加需要緩衝空間，因為對於腔室11而言鐵氟龍之熱變形大於鋁。In order to solve the problem caused by the thermal expansion of the metal component in the substrate processing apparatus, the insulator 20 may be divided into a plurality of components, and a buffer space may be provided between the components. Especially when the insulator 20 is formed of Teflon, a buffer space may be more required because the thermal deformation of the Teflon is larger than that of the aluminum for the chamber 11.
圖2A至圖2C為示意性說明根據本發明第一實施例之電位表面的分離結構之視圖。2A to 2C are views schematically illustrating a separation structure of a potential surface according to a first embodiment of the present invention.
圖2A中，絕緣體20包含第一部件及第二部件，第一部件及第二部件分別具有彼此平行之平坦表面。第一部件及第二部件設置於氣體分配板13與電極支撐單元19之間，使得平坦表面彼此之間以距離"d"間隔開並面向彼此。緩衝空間30存在於絕緣體20之第一部件與第二部件之間。In FIG. 2A, the insulator 20 includes a first member and a second member, the first member and the second member respectively having flat surfaces that are parallel to each other. The first member and the second member are disposed between the gas distribution plate 13 and the electrode supporting unit 19 such that the flat surfaces are spaced apart from each other by a distance "d" and face each other. The buffer space 30 is present between the first component and the second component of the insulator 20.
此處，氣體分配板13經由緩衝空間30而面向電極支撐單元19。因此，在緩衝空間30中仍可能產生電弧或電漿放電，從而引超絕緣體20劣化、氣體分配板13或其它元件損壞、由於薄膜沈積而產生微粒等。Here, the gas distribution plate 13 faces the electrode supporting unit 19 via the buffer space 30. Therefore, arcing or plasma discharge may still occur in the buffer space 30, thereby deteriorating the deterioration of the insulator 20, damage of the gas distribution plate 13 or other components, generation of particles due to film deposition, and the like.
圖2B中，絕緣體20包含第一部件及第二部件，第一部件及第二部件在面向彼此之第一表面及第二表面處分別具有突出部分20a及凹陷部分20b。突出部分20a及凹陷部分20b中之每一者可大體上形成於第一部件及第二部件的第一表面及第二表面中之一者的中心處。將第一部件及第二部件設置於氣體分配板13與電極支撐單元19之間，其中考慮到熱膨脹，第一表面與第二表面之間的距離為"d"。另外，突出部分20a部分地***凹陷部分20b中，且突出部分20a之頂部與凹陷部分20b的底部間隔開。因此，緩衝空間30不僅存在於第一部件及第二部件的第一表面與第二表面之間，而且存在於突出部分20a與凹陷部分20b之間。氣體分配板13不可直接面向電極支撐單元19。In FIG. 2B, the insulator 20 includes a first member and a second member, and the first member and the second member respectively have a protruding portion 20a and a recessed portion 20b at the first surface and the second surface facing each other. Each of the protruding portion 20a and the recessed portion 20b may be formed substantially at a center of one of the first surface and the second surface of the first member and the second member. The first member and the second member are disposed between the gas distribution plate 13 and the electrode supporting unit 19, wherein the distance between the first surface and the second surface is "d" in consideration of thermal expansion. In addition, the protruding portion 20a is partially inserted into the recessed portion 20b, and the top of the protruding portion 20a is spaced apart from the bottom of the recessed portion 20b. Therefore, the buffer space 30 exists not only between the first surface and the second surface of the first member and the second member but also between the protruding portion 20a and the recessed portion 20b. The gas distribution plate 13 is not directly facing the electrode supporting unit 19.
圖2C中，絕緣體20包含第一部件及第二部件，第一部件及第二部件在面向彼此之第一表面與第二表面中的一側分別具有突出部分21。第一部件及第二部件設置於氣體分配板13與電極支撐單元19之間，其中第一部件及第二部件之第一表面及第二表面中之一者與第一部件及第二部件中之另一者的突出部分21之間的距離為"d"，以使得突出部分21彼此交替。緩衝空間30存在於第一部件及第二部件中之一者的相向表面與第一部件及第二部件中之另一者的突出部分21之間，且氣體分配板13不直接面向電極支撐單元19。In FIG. 2C, the insulator 20 includes a first member and a second member, the first member and the second member respectively having protruding portions 21 on one of the first surface and the second surface facing each other. The first component and the second component are disposed between the gas distribution plate 13 and the electrode support unit 19, wherein one of the first surface and the second surface of the first component and the second component is in the first component and the second component The distance between the protruding portions 21 of the other one is "d" such that the protruding portions 21 alternate with each other. The buffer space 30 exists between the opposing surfaces of one of the first member and the second member and the protruding portion 21 of the other of the first member and the second member, and the gas distribution plate 13 does not directly face the electrode supporting unit 19.
與圖2A之結構相比，圖2B及圖2C的結構減少了放電之產生。然而，由於緩衝空間30而仍然存在放電之可能性。更確切而言，在氣體分配板13與電極支撐單元19之間存在電位差，且緩衝空間30中之一者暴露於腔室11之反應區。因此，流入緩衝空間30內的反應氣體由於電位差而放電，且常常產生不合需要之電漿。如上文所提及，緩衝空間30中的電漿引起絕緣體20劣化、氣體分配板13或其它元件損壞、由於薄膜沈積而產生微粒等。The structure of Figures 2B and 2C reduces the generation of discharge compared to the structure of Figure 2A. However, there is still a possibility of discharge due to the buffer space 30. More specifically, there is a potential difference between the gas distribution plate 13 and the electrode supporting unit 19, and one of the buffer spaces 30 is exposed to the reaction zone of the chamber 11. Therefore, the reaction gas flowing into the buffer space 30 is discharged due to the potential difference, and often produces an undesirable plasma. As mentioned above, the plasma in the buffer space 30 causes deterioration of the insulator 20, damage of the gas distribution plate 13 or other elements, generation of particles due to film deposition, and the like.
本發明之例示性實施例具有以下特徵，在絕緣體20的兩個部件之間的間隙或空間中***可收縮的緩衝絕緣體40，如圖3中所說明。An exemplary embodiment of the present invention has the feature of inserting a collapsible buffer insulator 40 in a gap or space between two components of insulator 20, as illustrated in FIG.
圖3為示意性說明根據本發明第二實施例之電位表面的分離結構之視圖，且圖4為說明根據本發明第二實施例的緩衝絕緣體之視圖。3 is a view schematically illustrating a separation structure of a potential surface according to a second embodiment of the present invention, and FIG. 4 is a view illustrating a buffer insulator according to a second embodiment of the present invention.
在圖3及圖4中，絕緣體20包含第一部件及第二部件，且緩衝絕緣體40設置於絕緣體20之第一部件與第二部件之間。In FIGS. 3 and 4, the insulator 20 includes a first member and a second member, and the buffer insulator 40 is disposed between the first member and the second member of the insulator 20.
更確切而言，絕緣體20之第一部件及第二部件在面向彼此之第一表面及第二表面的一側分別具有突出部分21。第一部件及第二部件設置於氣體分配板13與電極支撐板19之間，其中第一部件及第二部件之第一表面及第二表面中之一者與第一部件及第二部件中之另一者的突出部分21之間有一預定距離，以使得突出部分21彼此交替。緩衝空間存在於第一部件及第二部件之第一表面及第二表面中的一者與第一部件及第二部件中之另一者的突出部分21之間。緩衝絕緣體40設置於緩衝空間中。More specifically, the first member and the second member of the insulator 20 have protruding portions 21 on the sides facing the first surface and the second surface of each other, respectively. The first component and the second component are disposed between the gas distribution plate 13 and the electrode support plate 19, wherein one of the first surface and the second surface of the first component and the second component is in the first component and the second component The other of the protruding portions 21 has a predetermined distance therebetween so that the protruding portions 21 alternate with each other. The buffer space exists between one of the first surface and the second surface of the first component and the second component and the protruding portion 21 of the other of the first component and the second component. The buffer insulator 40 is disposed in the buffer space.
絕緣體20及緩衝絕緣體40使得與腔室11具有相同電位之第一電位表面跟與氣體分配板13及電漿電極14具有相同電位之第二電位表面分離。The insulator 20 and the buffer insulator 40 are such that the first potential surface having the same potential as the chamber 11 is separated from the second potential surface having the same potential as the gas distribution plate 13 and the plasma electrode 14.
緩衝絕緣體40可具有由於外力而能收縮之各種形狀。舉例而言，如圖4中所示，緩衝絕緣體40可包含水平部分42及垂直部分44，水平部分42及垂直部分44具有不同方向且交替地連接至彼此。緩衝絕緣體40之形狀並不限於此形狀。The buffer insulator 40 may have various shapes that can be contracted due to an external force. For example, as shown in FIG. 4, the buffer insulator 40 can include a horizontal portion 42 and a vertical portion 44 having different directions and alternately connected to each other. The shape of the buffer insulator 40 is not limited to this shape.
緩衝絕緣體40可由彈性絕緣材料形成，且可有利地由與絕緣體20相同的材料形成。舉例而言，緩衝絕緣體40可由工程塑膠形成，例如鐵氟龍，即聚四氟乙烯(polytetrafluoroethylene，PTFE)。The buffer insulator 40 may be formed of an elastic insulating material and may be advantageously formed of the same material as the insulator 20. For example, the buffer insulator 40 may be formed of an engineering plastic such as Teflon, that is, polytetrafluoroethylene (PTFE).
絕緣體20之第一部件與第二部件之間的緩衝空間內反應氣體之注入可藉由將緩衝絕緣體40***緩衝空間中而減少，且在緩衝空間中可減少電漿放電。此外，在緩衝空間中可防止沈積不合需要之薄膜。因此，無法產生微粒，且可防止例如腔室11之絕緣體20或其它元件劣化或損壞的問題。The injection of the reactive gas in the buffer space between the first component and the second component of the insulator 20 can be reduced by inserting the buffer insulator 40 into the buffer space, and the plasma discharge can be reduced in the buffer space. In addition, the deposition of undesirable films can be prevented in the buffer space. Therefore, particles cannot be generated, and problems such as deterioration or damage of the insulator 20 or other elements of the chamber 11 can be prevented.
如上文所述，緩衝絕緣體40可由於外力而收縮。圖5為示意性說明當存在外力時根據本發明第二實施例之電位表面的分離結構之視圖。As described above, the buffer insulator 40 can be contracted due to an external force. Fig. 5 is a view schematically showing a separation structure of a potential surface according to a second embodiment of the present invention when an external force is present.
如圖5中所示，當處理基板(未圖示)時，絕緣體20可由於熱而膨脹，且絕緣體20之第一部件與第二部件之間的緩衝空間可逐漸變窄。此時，緩衝絕緣體40可由於來自膨脹之絕緣體20的力而收縮，且可吸收膨脹力。As shown in FIG. 5, when a substrate (not shown) is processed, the insulator 20 may expand due to heat, and the buffer space between the first member and the second member of the insulator 20 may be gradually narrowed. At this time, the buffer insulator 40 can be contracted due to the force from the expanded insulator 20, and can absorb the expansion force.
此外，電位表面之分離結構可不同於圖3之分離結構。圖6及圖7為說明根據本發明第二實施例之電位表面的其它分離結構之視圖。Further, the separation structure of the potential surface may be different from the separation structure of FIG. 6 and 7 are views for explaining other separated structures of a potential surface according to a second embodiment of the present invention.
圖6中，絕緣體20包含第一部件及第二部件，第一部件及第二部件在面向彼此之第一表面及第二表面處分別具有突出部分20a及凹陷部分20b。突出部分20a及凹陷部分20b中之每一者可大體上形成於第一部件及第二部件之第一表面及第二表面中的一者之中心處，以使得其彼此對應。將第一部件及第二部件設置於氣體分配板13與電極支撐單元19之間，其中考慮到熱膨脹，第一表面與第二表面之間有一預定距離。因此，三個緩衝空間存在於第一部件及第二部件之第一表面與第二表面之間及突出部分20a與凹陷部分20b之間。緩衝絕緣體40分別設置於緩衝空間中。In FIG. 6, the insulator 20 includes a first member and a second member, and the first member and the second member have a protruding portion 20a and a recessed portion 20b at a first surface and a second surface facing each other, respectively. Each of the protruding portion 20a and the recessed portion 20b may be formed substantially at a center of one of the first surface and the second surface of the first member and the second member such that they correspond to each other. The first member and the second member are disposed between the gas distribution plate 13 and the electrode supporting unit 19, wherein a predetermined distance is formed between the first surface and the second surface in consideration of thermal expansion. Therefore, three buffer spaces exist between the first surface and the second surface of the first member and the second member and between the protruding portion 20a and the recessed portion 20b. The buffer insulators 40 are respectively disposed in the buffer space.
突出部分20a可部分地***於凹陷部分20b中，且突出部分20a的頂部可與凹陷部分20b之底部間隔開。The protruding portion 20a may be partially inserted into the recessed portion 20b, and the top of the protruding portion 20a may be spaced apart from the bottom of the recessed portion 20b.
圖7中，絕緣體20包含第一部件及第二部件，第一部件及第二部件分別具有彼此平行之平坦表面。第一部件及第二部件設置於氣體分配板13與電極支撐單元19之間，以使得平坦表面彼此之間以預定距離間隔開且面向彼此。緩衝空間存在於絕緣體20之第一部件與第二部件之間。緩衝絕緣體40設置於緩衝空間中。In FIG. 7, the insulator 20 includes a first member and a second member, the first member and the second member respectively having flat surfaces that are parallel to each other. The first member and the second member are disposed between the gas distribution plate 13 and the electrode supporting unit 19 such that the flat surfaces are spaced apart from each other by a predetermined distance and face each other. The buffer space exists between the first component and the second component of the insulator 20. The buffer insulator 40 is disposed in the buffer space.
根據本發明，由於緩衝絕緣體設置於絕緣體的部件之間的緩衝空間中，而該絕緣體安置於具有不同電位之電極支撐單元與氣體分配板之間，所以防止了反應氣體進入緩衝空間內，且在緩衝空間中可防止電漿放電。另外，在緩衝空間中沒有薄膜沈積，且因此不產生微粒。此外，可防止腔室之絕緣體或元件損壞及劣化。According to the present invention, since the buffer insulator is disposed in the buffer space between the members of the insulator, and the insulator is disposed between the electrode supporting unit having a different potential and the gas distribution plate, the reaction gas is prevented from entering the buffer space, and Plasma discharge is prevented in the buffer space. In addition, there is no film deposition in the buffer space, and thus no particles are generated. In addition, damage or deterioration of the insulation or components of the chamber can be prevented.
熟習此項技術者將顯而易見，可在不脫離本發明之精神或範疇之情況下，在裝置中進行各種修改及變化。因此，希望本發明涵蓋在隨附申請專利範圍及其等效物範疇內之本發明的修改及變化。It will be apparent to those skilled in the art that various modifications and changes can be made in the device without departing from the spirit and scope of the invention. Therefore, it is intended that the present invention cover the modifications and variations of the invention
10．．．PECVD裝置10. . . PECVD device
11．．．腔室11. . . Chamber
12．．．基板支撐件12. . . Substrate support
12a．．．軸12a. . . axis
13．．．氣體分配板13. . . Gas distribution plate
14．．．電漿電極14. . . Plasma electrode
15．．．氣體供應管線15. . . Gas supply line
16．．．阻抗匹配系統16. . . Impedance matching system
17．．．RF功率源17. . . RF power source
18．．．出口18. . . Export
19．．．電極支撐單元19. . . Electrode support unit
20．．．絕緣體20. . . Insulator
20a．．．突出部分20a. . . Projection
20b．．．凹陷部分20b. . . Sag part
21．．．突出部分twenty one. . . Projection
30．．．緩衝空間30. . . Buffer space
40．．．緩衝絕緣體40. . . Buffer insulator
42．．．水平部分42. . . Horizontal part
44．．．垂直部分44. . . Vertical part
d．．．距離d. . . distance
S．．．基板S. . . Substrate
圖1為說明根據相關技術之使用電漿來沈積薄膜的電漿增強化學氣相沈積裝置之視圖；圖2A至圖2C為示意性說明根據本發明第一實施例之電位表面的分離結構之視圖；圖3為示意性說明根據本發明第二實施例之電位表面的分離結構之視圖；圖4為說明根據本發明第二實施例之緩衝絕緣體之視圖；圖5為示意性說明當存在外力時根據本發明第二實施例之電位表面的分離結構之視圖；圖6為說明根據本發明第二實施例之電位表面的另一分離結構之視圖；及圖7為說明根據本發明第二實施例之電位表面的另一分離結構之視圖。1 is a view illustrating a plasma enhanced chemical vapor deposition apparatus for depositing a thin film using plasma according to the related art; and FIGS. 2A to 2C are views schematically illustrating a separation structure of a potential surface according to a first embodiment of the present invention; Figure 3 is a view schematically showing a separation structure of a potential surface according to a second embodiment of the present invention; Figure 4 is a view illustrating a buffer insulator according to a second embodiment of the present invention; and Figure 5 is a view schematically showing when an external force is present View of a separate structure of a potential surface according to a second embodiment of the present invention; FIG. 6 is a view illustrating another separated structure of a potential surface according to a second embodiment of the present invention; and FIG. 7 is a view illustrating a second embodiment according to the present invention A view of another separate structure of the potential surface.
13．．．體分配板13. . . Body distribution board
19．．．極支撐單元19. . . Polar support unit
20．．．緣體20. . . Margin
21．．．出部分twenty one. . . Out part
40．．．衝絕緣體40. . . Punch insulator
Claims (10)
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| KR1020060070373A KR101206725B1 (en) | 2006-07-26 | 2006-07-26 | Substrate processing apparatus in which buffer insulator is insulted in gap between different potential surfaces |
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| CN103458599B (en) * | 2013-09-24 | 2017-02-01 | 南方科技大学 | Low-temperature plasma processing device and method |
| US10175733B2 (en) * | 2015-07-17 | 2019-01-08 | Intersil Americas LLC | Systems and methods for substrates |
| CN110484895B (en) * | 2018-05-14 | 2021-01-08 | 北京北方华创微电子装备有限公司 | Chamber assembly and reaction chamber |
| CN115341198B (en) * | 2022-07-05 | 2023-08-04 | 湖南红太阳光电科技有限公司 | Flat plate type PECVD equipment |
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| US5478429A (en) * | 1993-01-20 | 1995-12-26 | Tokyo Electron Limited | Plasma process apparatus |
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