TWI477660B - 凸塊成形用非氰系電解鍍金浴 - Google Patents

凸塊成形用非氰系電解鍍金浴 Download PDF

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Publication number
TWI477660B
TWI477660B TW097129689A TW97129689A TWI477660B TW I477660 B TWI477660 B TW I477660B TW 097129689 A TW097129689 A TW 097129689A TW 97129689 A TW97129689 A TW 97129689A TW I477660 B TWI477660 B TW I477660B
Authority
TW
Taiwan
Prior art keywords
bump
gold
plating bath
film
sulfite
Prior art date
Application number
TW097129689A
Other languages
English (en)
Chinese (zh)
Other versions
TW200925336A (en
Inventor
Yuki Nakamura
Koichiro Inoue
Original Assignee
Metalor Technologies Japan Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Metalor Technologies Japan Corp filed Critical Metalor Technologies Japan Corp
Publication of TW200925336A publication Critical patent/TW200925336A/zh
Application granted granted Critical
Publication of TWI477660B publication Critical patent/TWI477660B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
TW097129689A 2007-08-07 2008-08-05 凸塊成形用非氰系電解鍍金浴 TWI477660B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007205410 2007-08-07

Publications (2)

Publication Number Publication Date
TW200925336A TW200925336A (en) 2009-06-16
TWI477660B true TWI477660B (zh) 2015-03-21

Family

ID=40389722

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097129689A TWI477660B (zh) 2007-08-07 2008-08-05 凸塊成形用非氰系電解鍍金浴

Country Status (4)

Country Link
JP (1) JP5336785B2 (ja)
KR (1) KR20090014992A (ja)
CN (1) CN101363128B (ja)
TW (1) TWI477660B (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5442400B2 (ja) * 2009-11-13 2014-03-12 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
WO2011118537A1 (ja) * 2010-03-26 2011-09-29 メタローテクノロジーズジャパン株式会社 シアン系電解金めっき浴及びそれを用いるめっき方法
JP5620798B2 (ja) * 2010-12-01 2014-11-05 メタローテクノロジーズジャパン株式会社 金バンプ形成用非シアン系電解金めっき浴、及び金バンプ形成方法
CN102254891A (zh) * 2011-08-01 2011-11-23 三星半导体(中国)研究开发有限公司 倒装芯片封装结构及其制造方法
JP6011074B2 (ja) * 2012-01-20 2016-10-19 富士通株式会社 電子装置の製造方法及び電子装置の製造装置
CN103290440B (zh) * 2012-02-22 2016-12-14 美泰乐科技(日本)股份有限公司 金凸点形成用非氰系电解镀金浴及金凸点形成方法
KR101464343B1 (ko) * 2013-04-02 2014-11-28 한밭대학교 산학협력단 범프 형성용 비시안계 금 도금욕 및 범프의 형성방법
JP6393526B2 (ja) * 2014-06-11 2018-09-19 メタローテクノロジーズジャパン株式会社 シアン系電解金めっき浴及びこれを用いるバンプ形成方法
JP6659247B2 (ja) * 2015-06-16 2020-03-04 デクセリアルズ株式会社 接続体、接続体の製造方法、検査方法
CN105401180A (zh) * 2015-12-23 2016-03-16 苏州市金星工艺镀饰有限公司 一种耐磨镀金膜的电镀液及其电镀方法
CN105401181A (zh) * 2015-12-23 2016-03-16 苏州市金星工艺镀饰有限公司 一种环保无氰镀金电镀液的电镀方法
CN113913879B (zh) * 2021-09-30 2022-08-09 深圳市联合蓝海黄金材料科技股份有限公司 无氰电镀金镀液及其应用和电镀制金凸块的方法以及金凸块和电子部件
KR102477921B1 (ko) * 2021-11-11 2022-12-14 마츠다 산교 가부시끼가이샤 무시안 전해 금 도금액
JP7017664B1 (ja) * 2021-11-11 2022-02-08 松田産業株式会社 ノーシアン電解金めっき液

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6511589B1 (en) * 2001-08-17 2003-01-28 Electroplating Engineers Of Japan Limited Gold plating solution and gold plating method using thereof
US20050056545A1 (en) * 2002-03-13 2005-03-17 Mitsubishi Chemical Corporation Gold plating solution and gold plating method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006322037A (ja) * 2005-05-18 2006-11-30 Electroplating Eng Of Japan Co 金めっき液
JP4713289B2 (ja) * 2005-09-30 2011-06-29 エヌ・イーケムキャット株式会社 バンプ形成用非シアン系電解金めっき浴
JP4713290B2 (ja) * 2005-09-30 2011-06-29 エヌ・イーケムキャット株式会社 金バンプ又は金配線の形成方法
JP2009062584A (ja) * 2007-09-06 2009-03-26 Ne Chemcat Corp バンプ形成用非シアン系電解金めっき浴及びバンプ形成方法
JP2009071093A (ja) * 2007-09-14 2009-04-02 Ne Chemcat Corp バンプ及びバンプ形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6511589B1 (en) * 2001-08-17 2003-01-28 Electroplating Engineers Of Japan Limited Gold plating solution and gold plating method using thereof
US20050056545A1 (en) * 2002-03-13 2005-03-17 Mitsubishi Chemical Corporation Gold plating solution and gold plating method

Also Published As

Publication number Publication date
JP5336785B2 (ja) 2013-11-06
TW200925336A (en) 2009-06-16
JP2009057631A (ja) 2009-03-19
CN101363128B (zh) 2011-12-14
CN101363128A (zh) 2009-02-11
KR20090014992A (ko) 2009-02-11

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