TWI476837B - Method for making thin film transistor - Google Patents
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本發明涉及一種薄膜電晶體的製備方法，尤其涉及一種基於奈米碳管的薄膜電晶體的製備方法。 The invention relates to a method for preparing a thin film transistor, in particular to a method for preparing a thin film transistor based on a carbon nanotube.
薄膜電晶體(Thin Film Transistor,TFT)係現代微電子技術中的一種關鍵性電子元件，已經被廣泛的應用於平板顯示器等領域。薄膜電晶體主要包括閘極、絕緣層、半導體層、源極和汲極。其中，源極和汲極間隔設置並與半導體層電連接，閘極通過絕緣層與半導體層及源極和汲極間隔絕緣設置。所述半導體層位於所述源極和汲極之間的區域形成一通道區域。薄膜電晶體中的閘極、源極、汲極均由導電材料構成，該導電材料一般為金屬或合金。當在閘極上施加一電壓時，與閘極通過絕緣層間隔設置的半導體層中的通道區域會積累載子，當載子積累到一定程度，與半導體層電連接的源極汲極之間將導通，從而有電流從源極流向汲極。在實際應用中，希望得到具有較大的開關電流比的薄膜電晶體。影響上述開關電流比的因素除薄膜電晶體的製備工藝外，薄膜電晶體半導體層中半導體材料的載子移動率為影響開關電流比的最重要的影響因素之一。 Thin Film Transistor (TFT) is a key electronic component in modern microelectronics technology and has been widely used in flat panel displays and other fields. The thin film transistor mainly includes a gate, an insulating layer, a semiconductor layer, a source, and a drain. The source and the drain are spaced apart from each other and electrically connected to the semiconductor layer, and the gate is insulated from the semiconductor layer and the source and the drain by an insulating layer. The semiconductor layer is located in a region between the source and the drain to form a channel region. The gate, the source and the drain of the thin film transistor are each composed of a conductive material, which is generally a metal or an alloy. When a voltage is applied to the gate, the channel region in the semiconductor layer spaced apart from the gate through the insulating layer accumulates carriers, and when the carrier accumulates to a certain extent, the source drain is electrically connected to the semiconductor layer. Turned on so that current flows from the source to the drain. In practical applications, it is desirable to obtain a thin film transistor having a large switching current ratio. Factors Affecting the Switching Current Ratio In addition to the preparation process of the thin film transistor, the carrier mobility of the semiconductor material in the thin film transistor layer is one of the most important factors affecting the switching current ratio.
先前技術中，薄膜電晶體中形成半導體層的材料為非晶矽、多晶矽或有機半導體聚合物等(R.E.I.Schropp,B.Stannowski,J.K.Rath,New challenges in thin film transistor research, Journal of Non-Crystalline Solids,299-302,1304-1310(2002))。以非晶矽作為半導體層的非晶矽薄膜電晶體的製備技術較為成熟，然，在非晶矽薄膜電晶體中，由於半導體層中通常含有大量的懸掛鍵，使得載子的遷移率很低，從而導致薄膜電晶體的響應速度較慢。以多晶矽作為半導體層的薄膜電晶體相對於以非晶矽作為半導體層的薄膜電晶體，具有較高的載子移動率，因此響應速度也較快。然而，多晶矽薄膜電晶體低溫製備成本較高，方法較複雜，大面積製備困難，且多晶矽薄膜電晶體的關態電流較大。相較於上述傳統的無機薄膜電晶體，採用有機半導體做半導體層的有機薄膜電晶體具有成本低、製備溫度低的優點，且有機薄膜電晶體具有較高的柔韌性。然，由於有機半導體聚合物在常溫下多為跳躍式傳導，表現出較高的電阻率、較低的載子移動率，使得有機薄膜電晶體的響應速度較慢。 In the prior art, a material for forming a semiconductor layer in a thin film transistor is an amorphous germanium, a polycrystalline germanium or an organic semiconductor polymer or the like (R.E.I. Schropp, B. Stannowski, J.K. Rath, New challenges in thin film transistor research, Journal of Non-Crystalline Solids, 299-302, 1304-1310 (2002)). The preparation technique of amorphous germanium thin film transistor with amorphous germanium as the semiconductor layer is relatively mature. However, in the amorphous germanium thin film transistor, since the semiconductor layer usually contains a large number of dangling bonds, the mobility of the carrier is low. , resulting in a slower response of the thin film transistor. A thin film transistor in which polycrystalline germanium is used as a semiconductor layer has a higher carrier mobility than a thin film transistor in which amorphous germanium is used as a semiconductor layer, and thus the response speed is also fast. However, the low-temperature preparation of the polycrystalline germanium thin film transistor is relatively high, the method is complicated, the large-area preparation is difficult, and the off-state current of the polycrystalline germanium thin film transistor is large. Compared with the above-mentioned conventional inorganic thin film transistor, the organic thin film transistor using the organic semiconductor as the semiconductor layer has the advantages of low cost and low preparation temperature, and the organic thin film transistor has high flexibility. However, since the organic semiconductor polymer is mostly skip-type conduction at normal temperature, it exhibits high resistivity and low carrier mobility, so that the response speed of the organic thin film transistor is slow.
奈米碳管具有優异的力學及電學性能。隨著奈米碳管螺旋方式的變化，奈米碳管可呈現出金屬性或半導體性。半導體性的奈米碳管具有較高的載子移動率(一般可達1000~1500cm2V-1s-1)，係製備電晶體的理想材料。先前技術中已有報道採用半導體性奈米碳管形成奈米碳管層作為薄膜電晶體的半導體層。上述採用奈米碳管層作為半導體層的薄膜電晶體的製備方法主要包括以下步驟：將奈米碳管粉末超聲波處理的方式分散於有機溶劑中；通過噴墨打印的方法將奈米碳管與有機溶劑的混合液打印在絕緣基板上，待有機溶劑揮發後，在絕緣基板的 預定位置上形成一奈米碳管層；通過沈積及蝕刻金屬薄膜的方法在奈米碳管層上形成源極及汲極；在奈米碳管層上沈積一層氮化矽形成一絕緣層；以及在絕緣層上沈積一金屬薄膜形成閘極。由於奈米碳管粉末易團聚，因此需要額外的分散步驟。然，該種通過超聲波分散的方式仍無法很好的分散奈米碳管，導致通過噴墨打印形成的半導體層中的奈米碳管無法均勻分布，從而影響薄膜電晶體的性能。另外，採用噴墨打印的方式製備奈米碳管層，方法較為複雜，因而不利於降低薄膜電晶體的生產成本。 Nano carbon tubes have excellent mechanical and electrical properties. The carbon nanotubes may exhibit metallic or semiconducting properties as the carbon nanotubes are spirally changed. Semiconducting carbon nanotubes have a high carrier mobility (generally up to 1000~1500cm 2 V -1 s -1 ) and are ideal materials for the preparation of transistors. It has been reported in the prior art to form a carbon nanotube layer as a semiconductor layer of a thin film transistor using a semiconducting carbon nanotube. The method for preparing a thin film transistor using the carbon nanotube layer as a semiconductor layer mainly includes the following steps: dispersing a carbon nanotube powder by ultrasonic treatment in an organic solvent; and performing carbon nanotube printing on the carbon nanotube The organic solvent mixture is printed on the insulating substrate, and after the organic solvent is volatilized, a carbon nanotube layer is formed on the predetermined position of the insulating substrate; the source is formed on the carbon nanotube layer by depositing and etching the metal thin film And bungee; depositing a layer of tantalum nitride on the carbon nanotube layer to form an insulating layer; and depositing a metal film on the insulating layer to form a gate. Since the carbon nanotube powder is easily agglomerated, an additional dispersion step is required. However, the carbon nanotubes are not well dispersed by ultrasonic dispersion, resulting in a non-uniform distribution of the carbon nanotubes in the semiconductor layer formed by inkjet printing, thereby affecting the performance of the thin film transistor. In addition, the preparation of the carbon nanotube layer by means of inkjet printing is complicated, which is not conducive to reducing the production cost of the thin film transistor.
有鑒於此，提供一種方法簡單、適於低成本大量生產薄膜電晶體的製備方法實為必要。 In view of this, it is necessary to provide a method for preparing a thin film transistor which is simple in method and suitable for low-cost mass production.
一種薄膜電晶體的製備方法，其包括以下步驟：製備一奈米碳管原料；將上述奈米碳管原料添加到溶劑中並進行絮化處理獲得一奈米碳管絮狀結構；將上述奈米碳管絮狀結構從溶劑中分離，並對該奈米碳管絮狀結構定型處理獲得一奈米碳管薄膜，所述奈米碳管薄膜由複數未經功能化處理之奈米碳管組成；鋪設上述奈米碳管薄膜於一絕緣基底表面，形成一奈米碳管層；間隔形成一源極及一汲極，並使該源極及汲極與上述奈米碳管層電連接；形成一絕緣層於上述奈米碳管層表面；以及形成一閘極於上述絕緣層表面，得到一薄膜電晶體。 A method for preparing a thin film transistor, comprising the steps of: preparing a carbon nanotube raw material; adding the above carbon nanotube raw material to a solvent and performing a flocculation treatment to obtain a nano carbon tube floc structure; The carbon tube floc structure is separated from the solvent, and the carbon nanotube floc structure is shaped to obtain a carbon nanotube film, which is composed of a plurality of unfunctionalized carbon nanotubes Forming; laying the above carbon nanotube film on the surface of an insulating substrate to form a carbon nanotube layer; forming a source and a drain at intervals, and electrically connecting the source and the drain to the carbon nanotube layer Forming an insulating layer on the surface of the carbon nanotube layer; and forming a gate on the surface of the insulating layer to obtain a thin film transistor.
一種薄膜電晶體的製備方法，其包括以下步驟：製備一奈米碳管原料；將上述奈米碳管原料添加到溶劑中並進 行絮化處理獲得一奈米碳管絮狀結構；將上述奈米碳管絮狀結構從溶劑中分離，並對該奈米碳管絮狀結構定型處理獲得一奈米碳管薄膜，所述奈米碳管薄膜由複數未經功能化處理之奈米碳管組成；提供一絕緣基底；形成一閘極於所述絕緣基底表面；形成一絕緣層覆蓋所述閘極；鋪設上述奈米碳管薄膜於絕緣層表面，形成一奈米碳管層；以及間隔形成一源極及一汲極，並使該源極及汲極與上述奈米碳管層電連接。 A method for preparing a thin film transistor, comprising the steps of: preparing a carbon nanotube raw material; adding the above carbon nanotube raw material to a solvent and advancing Performing a flocculation treatment to obtain a nano carbon tube floc structure; separating the above carbon nanotube floc structure from a solvent, and shaping the carbon nanotube floc structure to obtain a carbon nanotube film, The carbon nanotube film is composed of a plurality of unfunctionalized carbon nanotubes; an insulating substrate is provided; a gate is formed on the surface of the insulating substrate; an insulating layer is formed to cover the gate; and the nanocarbon is laid The tube film forms a carbon nanotube layer on the surface of the insulating layer; and a source and a drain are formed at intervals, and the source and the drain are electrically connected to the carbon nanotube layer.
一種薄膜電晶體的製備方法，包括以下步驟：製備一奈米碳管原料；將上述奈米碳管原料添加到溶劑中並進行絮化處理獲得一奈米碳管絮狀結構；將上述奈米碳管絮狀結構從溶劑中分離，並對該奈米碳管絮狀結構定型處理獲得一奈米碳管薄膜，所述奈米碳管薄膜由複數未經功能化處理之奈米碳管組成；鋪設上述奈米碳管薄膜於一絕緣基底表面，圖案化該奈米碳管薄膜，形成多個奈米碳管層；間隔形成多個源極及多個汲極，並使上述每一奈米碳管層均與一源極及一汲極電連接；在每一奈米碳管層表面形成一絕緣層；以及在每一絕緣層表面形成一閘極，得到多個薄膜電晶體。 A method for preparing a thin film transistor comprises the steps of: preparing a carbon nanotube raw material; adding the above carbon nanotube raw material to a solvent and performing a flocculation treatment to obtain a nano carbon tube floc structure; The carbon tube floc structure is separated from the solvent, and the carbon nanotube floc structure is shaped to obtain a carbon nanotube film, and the carbon nanotube film is composed of a plurality of unfunctionalized carbon nanotubes. Laying the above-mentioned carbon nanotube film on the surface of an insulating substrate, patterning the carbon nanotube film to form a plurality of carbon nanotube layers; forming a plurality of sources and a plurality of drains at intervals, and making each of the above The carbon nanotube layers are electrically connected to a source and a drain; an insulating layer is formed on the surface of each carbon nanotube layer; and a gate is formed on the surface of each insulating layer to obtain a plurality of thin film transistors.
本技術方案實施例提供的薄膜電晶體及薄膜電晶體陣列的製備方法具有以下優點：其一，通過絮化處理可獲得奈米碳管薄膜作半導體層，無需額外的分散處理步驟，簡化了製備工藝，降低了薄膜電晶體及薄膜電晶體陣列的生產成本。其二，經絮化處理後獲得的奈米碳管薄膜一定的黏性，可以通過直接黏附的方法將奈米碳管薄膜 設置於所需位置，該方法簡單、成本低，因此，本技術方案提供的薄膜電晶體的製備方法具有成本低、環保及節能的優點。其三，所述奈米碳管層中的奈米碳管相互纏繞且分布均勻，因此，該奈米碳管層用作半導體層時，使得源極和汲極之間具有較高的載子移動率、機械性能好等優點。 The method for preparing a thin film transistor and a thin film transistor array provided by the embodiments of the present technical solution has the following advantages: First, a carbon nanotube film can be obtained as a semiconductor layer by a flocculation treatment, which does not require an additional dispersion treatment step, and simplifies the preparation. The process reduces the production cost of thin film transistors and thin film transistor arrays. Second, the carbon nanotube film obtained after the flocculation treatment has a certain viscosity, and the carbon nanotube film can be directly adhered. The method is simple and low in cost. Therefore, the method for preparing the thin film transistor provided by the technical solution has the advantages of low cost, environmental protection and energy saving. Third, the carbon nanotubes in the carbon nanotube layer are intertwined and evenly distributed. Therefore, when the carbon nanotube layer is used as a semiconductor layer, a high carrier is provided between the source and the drain. The advantages of moving rate and mechanical performance are good.
以下將結合附圖對本技術方案作進一步的詳細說明。 The technical solution will be further described in detail below with reference to the accompanying drawings.
請參閱圖1及圖2，本技術方案第一實施例提供一種頂閘型薄膜電晶體10的製備方法，主要包括以下步驟： Referring to FIG. 1 and FIG. 2, a first embodiment of the present technical solution provides a method for preparing a top gate type thin film transistor 10, which mainly includes the following steps:
步驟一：製備一奈米碳管原料。所述奈米碳管原料的製備方法包括以下步驟：首先，製備一奈米碳管陣列形成於一基底，優選地，該陣列為超順排奈米碳管陣列。 Step 1: Prepare a carbon nanotube raw material. The method for preparing the carbon nanotube raw material comprises the following steps: First, preparing a carbon nanotube array formed on a substrate, preferably, the array is a super-sequential carbon nanotube array.
本技術方案實施例提供的奈米碳管陣列為單壁奈米碳管陣列、雙壁奈米碳管陣列及多壁奈米碳管陣列中的一種。該奈米碳管陣列的製備方法採用化學氣相沈積法，其具體步驟包括：(a)提供一平整基底，該基底可選用P型或N型矽基底，或選用形成有氧化層的矽基底，本實施例優選為採用4英寸的矽基底；(b)在基底表面均勻形成一催化劑層，該催化劑層材料可選用鐵(Fe)、鈷(Co)、鎳(Ni)或其任意組合的合金之一；(c)將上述形成有催化劑層的基底在700℃~900℃的空氣中退火約30分鐘~90分鐘；(d)將處理過的基底置於反應爐中， 在保護氣體環境下加熱到500℃~740℃，然後通入碳源氣體反應約5分鐘~30分鐘，生長得到奈米碳管陣列，其高度大於100微米。該奈米碳管陣列為多個彼此平行且垂直於基底生長的奈米碳管形成的純奈米碳管陣列，由於奈米碳管長度較長，部分奈米碳管會相互纏繞。該奈米碳管陣列與上述基底面積基本相同。通過上述控制生長條件，該超順排奈米碳管陣列中基本不含有雜質，如無定型碳或殘留的催化劑金屬顆粒等。 The carbon nanotube array provided by the embodiments of the present technical solution is one of a single-walled carbon nanotube array, a double-walled carbon nanotube array, and a multi-walled carbon nanotube array. The method for preparing the carbon nanotube array adopts a chemical vapor deposition method, and the specific steps thereof include: (a) providing a flat substrate, the substrate may be selected from a P-type or N-type germanium substrate, or a germanium substrate having an oxide layer formed thereon. Preferably, the present embodiment adopts a 4-inch germanium substrate; (b) uniformly forms a catalyst layer on the surface of the substrate, and the catalyst layer material may be selected from iron (Fe), cobalt (Co), nickel (Ni) or any combination thereof. One of the alloys; (c) annealing the substrate on which the catalyst layer is formed in air at 700 ° C to 900 ° C for about 30 minutes to 90 minutes; (d) placing the treated substrate in a reaction furnace, It is heated to 500 ° C ~ 740 ° C in a protective gas atmosphere, and then reacted with a carbon source gas for about 5 minutes to 30 minutes to grow to obtain a carbon nanotube array having a height greater than 100 μm. The carbon nanotube array is a plurality of pure carbon nanotube arrays formed by a plurality of carbon nanotubes which are parallel to each other and perpendicular to the substrate. Due to the long length of the carbon nanotubes, some of the carbon nanotubes are entangled with each other. The carbon nanotube array is substantially the same area as the above substrate. The super-sequential carbon nanotube array contains substantially no impurities such as amorphous carbon or residual catalyst metal particles, etc., by controlling the growth conditions described above.
本技術方案實施例中碳源氣可選用乙炔、乙烯、甲烷等化學性質較活潑的碳氫化合物，本技術方案實施例優選的碳源氣為乙炔；保護氣體為氮氣或惰性氣體，本技術方案實施例優選的保護氣體為氬氣。 In the embodiment of the technical solution, the carbon source gas may be a chemically active hydrocarbon such as acetylene, ethylene or methane. The preferred carbon source gas in the embodiment of the technical solution is acetylene; the shielding gas is nitrogen or an inert gas, and the technical solution is The preferred shielding gas for the examples is argon.
可以理解，本技術方案實施例提供的奈米碳管陣列不限於上述製備方法。 It can be understood that the carbon nanotube array provided by the embodiments of the present technical solution is not limited to the above preparation method.
其次，採用刀片或其他工具將上述奈米碳管陣列從基底刮落，獲得一奈米碳管原料，其中上述奈米碳管在一定程度上保持相互纏繞的狀態。所述的奈米碳管原料中，奈米碳管的長度大於100微米，優選地，奈米碳管的長度大於10微米。 Secondly, the above-mentioned carbon nanotube array is scraped off from the substrate by using a blade or other tool to obtain a carbon nanotube raw material, wherein the above-mentioned carbon nanotubes are kept in a state of being entangled to some extent. In the carbon nanotube raw material, the length of the carbon nanotube is greater than 100 micrometers, and preferably, the length of the carbon nanotube is greater than 10 micrometers.
步驟二：將上述奈米碳管原料添加到一溶劑中並進行絮化處理獲得一奈米碳管絮狀結構。 Step 2: adding the above carbon nanotube raw material to a solvent and performing a flocculation treatment to obtain a nano carbon tube floc structure.
本技術方案實施例中，溶劑可選用水、易揮發的有機溶劑等。絮化處理可通過採用超聲波分散處理或高強度攪拌等方法。優選地，本技術方案實施例採用超聲波分散 10~30分鐘。由於奈米碳管具有極大的比表面積，相互纏繞的奈米碳管之間具有較大的凡德瓦爾力。上述絮化處理並不會將該奈米碳管原料中的奈米碳管完全分散在溶劑中，奈米碳管之間通過凡德瓦爾力相互吸引、纏繞，形成網絡狀結構。 In the embodiment of the technical solution, the solvent may be selected from water, a volatile organic solvent or the like. The flocculation treatment can be carried out by a method such as ultrasonic dispersion treatment or high-intensity stirring. Preferably, the embodiment of the technical solution adopts ultrasonic dispersion 10~30 minutes. Due to the extremely large specific surface area of the carbon nanotubes, there is a large van der Waals force between the intertwined carbon nanotubes. The above flocculation treatment does not completely disperse the carbon nanotubes in the carbon nanotube raw material in the solvent, and the carbon nanotubes are mutually attracted and entangled by the van der Waals force to form a network structure.
步驟三，將上述奈米碳管絮狀結構從溶劑中分離，並對該奈米碳管絮狀結構定型處理以獲得一奈米碳管薄膜。 In the third step, the above-mentioned carbon nanotube floc structure is separated from the solvent, and the carbon nanotube floc structure is shaped to obtain a carbon nanotube film.
本技術方案實施例中，所述的分離奈米碳管絮狀結構的方法具體包括以下步驟：將上述含有奈米碳管絮狀結構的溶劑倒入一放有濾紙的漏斗中；靜置乾燥一段時間從而獲得一分離的奈米碳管絮狀結構，該絮狀結構中的奈米碳管相互纏繞。 In the embodiment of the technical solution, the method for separating the carbon nanotube floc structure comprises the following steps: pouring the solvent containing the carbon nanotube floc structure into a funnel with a filter paper; A period of time is obtained to obtain a separate carbon nanotube floc structure in which the carbon nanotubes are intertwined.
本技術方案實施例中，所述的定型處理過程具體包括以下步驟：將該奈米碳管絮狀結構按照預定形狀攤開；施加一定壓力於攤開的奈米碳管絮狀結構；以及，將該奈米碳管絮狀結構中殘留的溶劑烘乾或等溶劑自然揮發後獲得一奈米碳管薄膜。 In the embodiment of the technical solution, the setting process specifically includes the following steps: spreading the carbon nanotube floc structure according to a predetermined shape; applying a certain pressure to the expanded carbon nanotube floc structure; The carbon nanotube film is obtained by drying the solvent remaining in the nano carbon tube floc structure or naturally evaporating the solvent.
可以理解，本技術方案實施例可通過控制該奈米碳管絮狀結構攤開的面積來控制該奈米碳管薄膜的厚度和麵密度。奈米碳管絮狀結構攤開的面積越大，則該奈米碳管薄膜的厚度和麵密度就越小。請參閱圖3，為本技術方案實施例中獲得的奈米碳管薄膜，該奈米碳管薄膜中的多個奈米碳管相互纏繞，形成了一微孔結構，本技術方案實施例製備的奈米碳管薄膜中包括相互纏繞的奈米碳管 ，所述奈米碳管之間通過凡德瓦爾力相互吸引、纏繞，形成網絡狀結構，因此該奈米碳管薄膜具有很好的韌性。該奈米碳管薄膜中，奈米碳管為各向同性，均勻分布，無規則排列，形成大量的微孔結構，微孔孔徑小於10微米。所述奈米碳管薄膜的厚度為0.5奈米~100微米。 It can be understood that the embodiment of the technical solution can control the thickness and the areal density of the carbon nanotube film by controlling the area spread by the carbon nanotube floc structure. The larger the area of the carbon nanotube floc spread, the smaller the thickness and areal density of the carbon nanotube film. Referring to FIG. 3 , a carbon nanotube film obtained in an embodiment of the present invention, wherein a plurality of carbon nanotubes in the carbon nanotube film are intertwined to form a microporous structure, which is prepared by the embodiment of the present technical solution. Nano carbon nanotube film including intertwined carbon nanotubes The carbon nanotubes are mutually attracted and entangled by the van der Waals force to form a network structure, so the carbon nanotube film has good toughness. In the carbon nanotube film, the carbon nanotubes are isotropic, uniformly distributed, and randomly arranged to form a large number of microporous structures having a pore diameter of less than 10 μm. The carbon nanotube film has a thickness of from 0.5 nm to 100 μm.
另，上述分離與定型處理步驟也可直接通過抽濾的方式獲得一奈米碳管薄膜，具體包括以下步驟：提供一微孔濾膜及一抽氣漏斗；將上述含有奈米碳管絮狀結構的溶劑經過該微孔濾膜倒入該抽氣漏斗中；抽濾並乾燥後獲得一奈米碳管薄膜。該微孔濾膜為一表面光滑、孔徑為0.22微米的濾膜。由於抽濾方式本身將提供一較大的氣壓作用於該奈米碳管絮狀結構，該奈米碳管絮狀結構經過抽濾會直接形成一均勻的奈米碳管薄膜。且，由於微孔濾膜表面光滑，該奈米碳管薄膜容易剝離。 In addition, the above separation and sizing treatment step can also directly obtain a carbon nanotube film by suction filtration, specifically comprising the steps of: providing a microporous membrane and an extraction funnel; and the above-mentioned carbon nanotube containing flocculation The solvent of the structure is poured into the suction funnel through the microfiltration membrane; after suction filtration and drying, a carbon nanotube film is obtained. The microporous membrane is a filter membrane having a smooth surface and a pore size of 0.22 μm. Since the suction filtration method itself will provide a large gas pressure on the carbon nanotube floc structure, the carbon nanotube floc structure directly forms a uniform carbon nanotube film by suction filtration. Moreover, since the surface of the microporous membrane is smooth, the carbon nanotube film is easily peeled off.
由於本技術方案第一實施例步驟一中提供的超順排奈米碳管陣列中的奈米碳管非常純淨，且由於奈米碳管本身的比表面積非常大，所以該奈米碳管薄膜本身具有一定的黏性。 Since the carbon nanotubes in the super-sequential carbon nanotube array provided in the first step of the first embodiment of the technical solution are very pure, and because the specific surface area of the carbon nanotube itself is very large, the carbon nanotube film is It has a certain viscosity.
步驟四：鋪設上述奈米碳管薄膜於一絕緣基底110表面，形成一奈米碳管層140作為薄膜電晶體10的半導體層。其具體包括以下步驟：提供一絕緣基底110；將上述奈米碳管薄膜鋪設於該絕緣基底110表面。 Step 4: Laying the above-mentioned carbon nanotube film on the surface of an insulating substrate 110 to form a carbon nanotube layer 140 as a semiconductor layer of the thin film transistor 10. Specifically, the method includes the following steps: providing an insulating substrate 110; and laying the carbon nanotube film on the surface of the insulating substrate 110.
所述絕緣基底110的材料可選用大規模集成電路中的基板的材料。所述絕緣基底110形狀不限，可為方形、圓形等 任何形狀。所述絕緣基底110的大小尺寸不限，具體可根據實際情況而定。所述絕緣基底110具有一平整的表面。具體地，所述絕緣基底110的材料可以為硬性材料，如P型或N型矽、形成有氧化層的矽、透明石英、或形成有氧化層的透明石英。另外，該絕緣基底110的材料還可以是塑料或樹脂材料，如一PET薄膜。 The material of the insulating substrate 110 may be selected from the materials of the substrate in a large scale integrated circuit. The shape of the insulating substrate 110 is not limited, and may be square, circular, or the like. Any shape. The size of the insulating substrate 110 is not limited, and may be determined according to actual conditions. The insulating substrate 110 has a flat surface. Specifically, the material of the insulating substrate 110 may be a hard material such as a P-type or N-type germanium, a germanium formed with an oxide layer, a transparent quartz, or a transparent quartz formed with an oxide layer. In addition, the material of the insulating substrate 110 may also be a plastic or resin material such as a PET film.
本技術方案實施例步驟四中該奈米碳管薄膜可利用其本身的黏性直接黏附於所述的絕緣基底110的表面上。 In the fourth step of the embodiment of the technical solution, the carbon nanotube film can be directly adhered to the surface of the insulating substrate 110 by its own adhesiveness.
另外，可使用有機溶劑處理上述黏附在絕緣基底110上的奈米碳管層140。具體地，可通過試管將有機溶劑滴落在奈米碳管層140表面浸潤整個奈米碳管層140。該有機溶劑可以與步驟二中所述的有機溶劑相同，具體地為揮發性有機溶劑，如乙醇、甲醇、丙酮、二氯乙烷或氯仿，本實施例中採用乙醇。該奈米碳管層140經有機溶劑浸潤處理後，在揮發性有機溶劑的表面張力的作用下，該奈米碳管層140可貼附在絕緣基底110表面，且表面體積比减小，黏性降低，具有良好的機械強度及韌性。另，還可通過一黏結劑將所述奈米碳管層140更好地黏結於所述絕緣基底110上。 In addition, the above-described carbon nanotube layer 140 adhered to the insulating substrate 110 may be treated with an organic solvent. Specifically, the organic solvent may be dropped on the surface of the carbon nanotube layer 140 by a test tube to infiltrate the entire carbon nanotube layer 140. The organic solvent may be the same as the organic solvent described in the second step, specifically a volatile organic solvent such as ethanol, methanol, acetone, dichloroethane or chloroform, and ethanol is used in this embodiment. After the carbon nanotube layer 140 is subjected to an organic solvent infiltration treatment, the carbon nanotube layer 140 can be attached to the surface of the insulating substrate 110 under the action of the surface tension of the volatile organic solvent, and the surface volume ratio is reduced, and the viscosity is reduced. Reduced properties, good mechanical strength and toughness. Alternatively, the carbon nanotube layer 140 may be better bonded to the insulating substrate 110 by a bonding agent.
步驟五：間隔形成一源極151及一汲極152，並使該源極151及汲極152與上述奈米碳管層140電連接。 Step 5: forming a source 151 and a drain 152 at intervals, and electrically connecting the source 151 and the drain 152 to the carbon nanotube layer 140.
該源極151及汲極152的材料應具有較好的導電性。具體地，該源極151及汲極152的材料可以為金屬、合金、銦錫氧化物(ITO)、銻錫氧化物(ATO)、導電銀膠、導 電聚合物以及金屬性奈米碳管等導電材料。根據形成源極151及汲極152的材料種類的不同，可採用不同方法形成該源極151及汲極152。具體地，當該源極151及汲極152的材料為金屬、合金、ITO或ATO時，可通過濺鍍、濺射、沈積、掩模及蝕刻等方法形成源極151及汲極152。當該源極151及汲極152的材料為導電銀膠、導電聚合物或金屬性奈米碳管時，可通過印刷塗附或直接黏附的方法，將該導電銀膠或金屬性奈米碳管塗附或黏附於絕緣基底110或奈米碳管層140表面，形成源極151及汲極152。一般地，該源極151及汲極152的厚度為0.5奈米~100微米，源極151至汲極152之間的距離為1~100微米。 The material of the source 151 and the drain 152 should have good electrical conductivity. Specifically, the material of the source 151 and the drain 152 may be metal, alloy, indium tin oxide (ITO), antimony tin oxide (ATO), conductive silver paste, and conductive Conductive materials such as electropolymers and metallic carbon nanotubes. The source 151 and the drain 152 may be formed by different methods depending on the type of material forming the source 151 and the drain 152. Specifically, when the material of the source 151 and the drain 152 is metal, alloy, ITO or ATO, the source 151 and the drain 152 may be formed by sputtering, sputtering, deposition, masking, etching, or the like. When the material of the source 151 and the drain 152 is a conductive silver paste, a conductive polymer or a metallic carbon nanotube, the conductive silver paste or the metallic nano carbon can be printed or directly adhered. The tube is coated or adhered to the surface of the insulating substrate 110 or the carbon nanotube layer 140 to form a source 151 and a drain 152. Generally, the source 151 and the drain 152 have a thickness of 0.5 nm to 100 μm, and the distance between the source 151 and the drain 152 is 1 to 100 μm.
本實施例中，該源極151及汲極152材料為金屬。上述步驟五具體可通過兩種方式進行。第一種方式具體包括以下步驟：首先，在上述奈米碳管層140表面均勻塗覆一層光刻膠；其次，通過曝光及顯影等光刻方法在光刻膠上形成源極151及汲極152區域，在該源極151及汲極152區域露出該奈米碳管層140；再次，通過真空濺鍍、磁控濺射或電子束蒸發沈積等沈積方法在上述光刻膠、源極151及汲極152區域表面沈積一金屬層，優選為鈀、鈦或鎳金屬層；最後，通過丙酮等有機溶劑去除光刻膠及其上的金屬層，即得到形成在奈米碳管層140上的源極151及汲極152。第二種方式具體包括以下步驟：首先，在奈米碳管層140表面沈積一金屬層；其次，在該金屬層表面塗覆一層光刻膠；再次，通過曝光及顯影等光刻方法去除源 極151區域及汲極152區域外的光刻膠；最後，通過電漿體蝕刻等方法去除源極151區域及汲極152區域外的金屬層，並以丙酮等有機溶劑去除源極151區域及汲極152區域上的光刻膠，即得到形成在奈米碳管層140上的源極151及汲極152。本實施例中，該源極151及汲極152的厚度為1微米，源極151至汲極152之間的距離為50微米。 In this embodiment, the source 151 and the drain 152 are made of metal. Step 5 above can be specifically performed in two ways. The first method specifically includes the following steps: first, uniformly coating a layer of photoresist on the surface of the carbon nanotube layer 140; secondly, forming a source 151 and a drain on the photoresist by photolithography such as exposure and development. In the region 152, the carbon nanotube layer 140 is exposed in the source 151 and the drain 152; again, in the above photoresist or source 151 by a deposition method such as vacuum sputtering, magnetron sputtering or electron beam evaporation deposition. And depositing a metal layer on the surface of the drain 152 region, preferably a palladium, titanium or nickel metal layer; finally, removing the photoresist and the metal layer thereon by an organic solvent such as acetone, thereby forming on the carbon nanotube layer 140 Source 151 and drain 152. The second method specifically includes the following steps: first, depositing a metal layer on the surface of the carbon nanotube layer 140; secondly, coating a surface of the metal layer with a photoresist; again, removing the source by photolithography such as exposure and development a photoresist outside the region of the pole 151 and the region of the drain 152; finally, the metal layer outside the source 151 region and the drain 152 region is removed by plasma etching or the like, and the source 151 region is removed by an organic solvent such as acetone and The photoresist on the drain 152 region, that is, the source 151 and the drain 152 formed on the carbon nanotube layer 140 are obtained. In this embodiment, the source 151 and the drain 152 have a thickness of 1 micron, and the distance between the source 151 and the drain 152 is 50 micrometers.
可以理解，為得到具有更好的半導體性的奈米碳管層140，在形成源極151及汲極152之後，可以進一步包括一去除奈米碳管層140中的金屬性奈米碳管的步驟。具體包括以下步驟：首先，提供一外部電源，其次，將外部電源的正負兩極連接至源極151及汲極152；最後，通過外部電源在源極151及汲極152兩端施加一電壓，使金屬性的奈米碳管發熱並燒蝕，獲得一半導體性的奈米碳管層140。該電壓在1~1000伏範圍內。 It can be understood that, in order to obtain the carbon nanotube layer 140 having better semiconductivity, after forming the source electrode 151 and the drain electrode 152, a metal carbon nanotube in the carbon nanotube layer 140 may be further removed. step. Specifically, the method includes the following steps: first, providing an external power supply, and secondly, connecting the positive and negative poles of the external power source to the source 151 and the drain 152; finally, applying a voltage across the source 151 and the drain 152 through the external power source, so that The metallic carbon nanotubes are heated and ablated to obtain a semiconducting carbon nanotube layer 140. This voltage is in the range of 1 to 1000 volts.
另，上述去除奈米碳管層140中金屬性奈米碳管的方法也可使用氫電漿體、微波、太赫茲(THz)、紅外線(IR)、紫外線(UV)或可見光(Vis)照射該奈米碳管層140，使金屬性的奈米碳管發熱並燒蝕，獲得一半導體性的奈米碳管層140。 In addition, the above method of removing the metallic carbon nanotubes in the carbon nanotube layer 140 may also be performed by using a hydrogen plasma, microwave, terahertz (THz), infrared (IR), ultraviolet (UV) or visible (Vis) irradiation. The carbon nanotube layer 140 heats and ablates the metallic carbon nanotube to obtain a semiconducting carbon nanotube layer 140.
可以理解，步驟五也可先於步驟四之前進行。 It can be understood that step 5 can also be performed before step four.
步驟六：在上述奈米碳管層140上形成一絕緣層130。 Step 6: forming an insulating layer 130 on the carbon nanotube layer 140.
該絕緣層130的材料可以為氮化矽、氧化矽等硬性材料或苯並環丁烯(BCB)、聚酯或丙烯酸樹脂等柔性材料。根據絕緣層130的材料種類的不同，可以採用不同方法形成該 絕緣層130。具體地，當該絕緣層130的材料為氮化矽或氧化矽時，可以通過沈積的方法形成絕緣層130。當該絕緣層130的材料為苯並環丁烯(BCB)、聚酯或丙烯酸樹脂時，可以通過印刷塗附的方法形成絕緣層130。一般地，該絕緣層130的厚度為0.5奈米~100微米。 The material of the insulating layer 130 may be a hard material such as tantalum nitride or tantalum oxide or a flexible material such as benzocyclobutene (BCB), polyester or acrylic resin. Depending on the type of material of the insulating layer 130, different methods can be used to form the Insulation layer 130. Specifically, when the material of the insulating layer 130 is tantalum nitride or tantalum oxide, the insulating layer 130 may be formed by a deposition method. When the material of the insulating layer 130 is benzocyclobutene (BCB), polyester or acrylic resin, the insulating layer 130 can be formed by a printing coating method. Generally, the insulating layer 130 has a thickness of 0.5 nm to 100 μm.
本實施方式中採用電漿體化學氣相沈積等沈積方法形成一氮化矽絕緣層130覆蓋於奈米碳管層140及形成在奈米碳管層140上的源極151及汲極152表面。絕緣層130的厚度約為1微米。 In the present embodiment, a tantalum nitride insulating layer 130 is formed by a deposition method such as plasma chemical vapor deposition to cover the surface of the carbon nanotube layer 140 and the source 151 and the drain 152 formed on the carbon nanotube layer 140. . The insulating layer 130 has a thickness of about 1 micrometer.
可以理解，根據薄膜電晶體10的不同應用，可以採用與形成源極151及汲極152相似的光刻或蝕刻的方法將所述源極151及汲極152的一部分暴露在絕緣層130外。 It can be understood that, depending on the different applications of the thin film transistor 10, a portion of the source 151 and the drain 152 may be exposed outside the insulating layer 130 by photolithography or etching similar to the formation of the source 151 and the drain 152.
步驟七：形成一閘極120於所述絕緣層130表面，得到一薄膜電晶體10。 Step 7: forming a gate 120 on the surface of the insulating layer 130 to obtain a thin film transistor 10.
該閘極120的材料應具有較好的導電性。具體地，該閘極120的材料可以為金屬、合金、ITO、ATO、導電銀膠、導電聚合物以及奈米碳管薄膜等導電材料。該金屬或合金材料可為鋁、銅、鎢、鉬、金或它們的合金。具體地，當該閘極120的材料為金屬、合金、ITO或ATO時，可通過濺鍍、濺射、沈積、掩模及蝕刻等方法形成閘極120。當該閘極120的材料為導電銀膠、導電聚合物或奈米碳管薄膜時，可以通過直接黏附或印刷塗附的方法形成閘極120。一般地，該閘極120的厚度為0.5奈米~100微米。 The material of the gate 120 should have good electrical conductivity. Specifically, the material of the gate 120 may be a conductive material such as a metal, an alloy, an ITO, an ATO, a conductive silver paste, a conductive polymer, or a carbon nanotube film. The metal or alloy material can be aluminum, copper, tungsten, molybdenum, gold, or alloys thereof. Specifically, when the material of the gate 120 is metal, alloy, ITO or ATO, the gate 120 may be formed by sputtering, sputtering, deposition, masking, etching, or the like. When the material of the gate 120 is a conductive silver paste, a conductive polymer or a carbon nanotube film, the gate 120 can be formed by direct adhesion or printing. Generally, the gate 120 has a thickness of 0.5 nm to 100 μm.
本技術方案實施例中通過與形成源極151及汲極152相似的方法在絕緣層130表面且與半導體層相對的位置形成一導電薄膜作為閘極120。該閘極120通過絕緣層130與半導體層電絕緣。本技術方案實施例中，所述閘極120的材料為鋁，閘極120的厚度約為1微米。 In the embodiment of the present technical solution, a conductive film is formed as the gate 120 at a position on the surface of the insulating layer 130 and opposite to the semiconductor layer by a method similar to the formation of the source electrode 151 and the drain electrode 152. The gate 120 is electrically insulated from the semiconductor layer by the insulating layer 130. In the embodiment of the technical solution, the material of the gate 120 is aluminum, and the thickness of the gate 120 is about 1 micrometer.
請參閱圖4及圖5，本技術方案第二實施例提供一種底閘型薄膜電晶體20的製備方法，其與第一實施例中薄膜電晶體10的製備方法基本相同。主要區別在於，本實施例中形成的薄膜電晶體20為一底閘型結構。本技術方案第二實施例薄膜電晶體20的製備方法包括以下步驟： Referring to FIG. 4 and FIG. 5, the second embodiment of the present invention provides a method for preparing the bottom gate type thin film transistor 20, which is basically the same as the method for preparing the thin film transistor 10 in the first embodiment. The main difference is that the thin film transistor 20 formed in this embodiment is a bottom gate type structure. The method for preparing the thin film transistor 20 of the second embodiment of the present technical solution includes the following steps:
步驟一：製備一奈米碳管原料。 Step 1: Prepare a carbon nanotube raw material.
步驟二：將上述奈米碳管原料添加到溶劑中並進行絮化處理獲得一奈米碳管絮狀結構。 Step 2: adding the above carbon nanotube raw material to a solvent and performing a flocculation treatment to obtain a nano carbon tube floc structure.
步驟三：將上述奈米碳管絮狀結構從溶劑中分離，並對該奈米碳管絮狀結構定型處理以獲得一奈米碳管薄膜。 Step 3: separating the above-mentioned carbon nanotube floc structure from a solvent, and shaping the carbon nanotube floc structure to obtain a carbon nanotube film.
步驟四：提供一絕緣基底210。 Step 4: Provide an insulating substrate 210.
步驟五：形成一閘極220於所述絕緣基底210表面。 Step 5: Form a gate 220 on the surface of the insulating substrate 210.
步驟六：形成一絕緣層230覆蓋所述閘極220。 Step 6: Form an insulating layer 230 to cover the gate 220.
步驟七：鋪設上述奈米碳管薄膜於絕緣層230表面，形成一奈米碳管層240。 Step 7: Laying the above-mentioned carbon nanotube film on the surface of the insulating layer 230 to form a carbon nanotube layer 240.
步驟八：間隔形成一源極251及一汲極252，並使該源極251及汲極252與上述奈米碳管層240電連接。 Step 8: forming a source 251 and a drain 252 at intervals, and electrically connecting the source 251 and the drain 252 to the carbon nanotube layer 240.
將上述奈米碳管薄膜黏附於絕緣層230表面，從而與閘極220電絕緣，並與閘極220相對。上述源極251及汲極252直接形成於上述奈米碳管層240表面。 The above-mentioned carbon nanotube film is adhered to the surface of the insulating layer 230 to be electrically insulated from the gate 220 and opposed to the gate 220. The source electrode 251 and the drain electrode 252 are formed directly on the surface of the carbon nanotube layer 240.
可以理解，上述步驟八可以先於步驟七進行，即上述源極251及汲極252形成於絕緣層230表面後，鋪設上述奈米碳管薄膜於絕緣層230表面並覆蓋源極251及汲極252。 It can be understood that the above step 8 can be performed in the seventh step, that is, after the source electrode 251 and the drain electrode 252 are formed on the surface of the insulating layer 230, the carbon nanotube film is laid on the surface of the insulating layer 230 and covers the source electrode 251 and the drain electrode. 252.
請參閱圖6，本技術方案第三實施例提供一種薄膜電晶體的製備方法，其與第一實施例薄膜電晶體10的製備方法基本相同。主要區別在於，本實施例在同一絕緣基底上形成多個薄膜電晶體，從而形成一薄膜電晶體陣列。本實施例薄膜電晶體的製備方法具體包括以下步驟： Referring to FIG. 6, a third embodiment of the present technical solution provides a method for preparing a thin film transistor, which is basically the same as the method for preparing the thin film transistor 10 of the first embodiment. The main difference is that this embodiment forms a plurality of thin film transistors on the same insulating substrate to form a thin film transistor array. The method for preparing the thin film transistor of the embodiment specifically includes the following steps:
步驟一：製備一奈米碳管原料。 Step 1: Prepare a carbon nanotube raw material.
步驟二：將上述奈米碳管原料添加到溶劑中並進行絮化處理獲得一奈米碳管絮狀結構。 Step 2: adding the above carbon nanotube raw material to a solvent and performing a flocculation treatment to obtain a nano carbon tube floc structure.
步驟三：將上述奈米碳管絮狀結構從溶劑中分離，並對該奈米碳管絮狀結構定型處理以獲得一奈米碳管薄膜。 Step 3: separating the above-mentioned carbon nanotube floc structure from a solvent, and shaping the carbon nanotube floc structure to obtain a carbon nanotube film.
步驟四：鋪設上述至少一奈米碳管薄膜於一絕緣基底表面，圖案化該奈米碳管薄膜，形成多個奈米碳管層。 Step 4: laying the at least one carbon nanotube film on the surface of an insulating substrate, patterning the carbon nanotube film to form a plurality of carbon nanotube layers.
上述多個奈米碳管層可以根據需要形成於絕緣基底表面的特定位置。當應用於液晶顯示器中時，多個奈米碳管層可以按行及按列方式形成於上述絕緣基底表面。具體地，該步驟四進一步包括以下步驟：(a)將奈米碳管薄 膜黏附於上述絕緣基底表面。(b)採用鐳射蝕刻、電漿體蝕刻等方法對該奈米碳管薄膜進行切割，從而使其圖案化，在絕緣基底的表面形成多個奈米碳管層。 The plurality of carbon nanotube layers may be formed at specific positions on the surface of the insulating substrate as needed. When applied to a liquid crystal display, a plurality of carbon nanotube layers may be formed on the surface of the insulating substrate in a row and in a row. Specifically, the step 4 further includes the following steps: (a) thinning the carbon nanotubes The film is adhered to the surface of the above insulating substrate. (b) The carbon nanotube film is cut by laser etching or plasma etching to form a plurality of carbon nanotube layers on the surface of the insulating substrate.
步驟五：間隔形成多個源極及多個汲極，並使上述每一奈米碳管層均與一源極及一汲極電連接。 Step 5: forming a plurality of sources and a plurality of drains at intervals, and electrically connecting each of the carbon nanotube layers to a source and a drain.
與第一實施例薄膜電晶體10中源極151及汲極152的形成方法相似，本實施例可以先在形成有多個奈米碳管層的整個絕緣基底表面沈積一金屬薄膜，再通過蝕刻等方法圖案化該金屬薄膜，從而在預定位置上一次形成多個源極及多個汲極。上述源極及汲極的材料也可為ITO薄膜、ATO薄膜、導電聚合物薄膜、導電銀膠或奈米碳管薄膜。 Similar to the method of forming the source electrode 151 and the drain electrode 152 in the thin film transistor 10 of the first embodiment, in this embodiment, a metal film may be deposited on the surface of the entire insulating substrate on which the plurality of carbon nanotube layers are formed, and then etched. The metal film is patterned by a method such that a plurality of sources and a plurality of drains are formed at a predetermined position. The material of the source and the drain may also be an ITO film, an ATO film, a conductive polymer film, a conductive silver paste or a carbon nanotube film.
步驟六：覆蓋多個絕緣層於每一奈米碳管層的表面。與第一實施例薄膜電晶體10中絕緣層的製備方法相似地的，可以先在整個絕緣基底的表面沈積一氮化矽薄膜，再通過蝕刻等方法圖案化該氮化矽薄膜，從而在預定位置上一次形成多個絕緣層。上述絕緣層的材料也可為氧化矽等硬性材料或苯並環丁烯(BCB)、聚酯或丙烯酸樹脂等柔性材料。 Step 6: Cover a plurality of insulating layers on the surface of each carbon nanotube layer. Similar to the method for preparing the insulating layer in the thin film transistor 10 of the first embodiment, a tantalum nitride film may be deposited on the surface of the entire insulating substrate, and then the tantalum nitride film is patterned by etching or the like, thereby being predetermined. A plurality of insulating layers are formed at a position last time. The material of the insulating layer may be a hard material such as cerium oxide or a flexible material such as benzocyclobutene (BCB), polyester or acrylic resin.
步驟七：形成多個閘極於每一絕緣層的表面，得到一薄膜電晶體陣列，該薄膜電晶體陣列包括多個薄膜電晶體。本技術領域的技術人員應該明白，上述步驟四中採用鐳射蝕刻或電漿體蝕刻等方法切割上述奈米碳管薄膜的步驟也可以在步驟五至步驟七中的任意步驟中進行。 Step 7: forming a plurality of gates on the surface of each of the insulating layers to obtain a thin film transistor array including a plurality of thin film transistors. It should be understood by those skilled in the art that the step of cutting the carbon nanotube film by laser etching or plasma etching in the above step 4 may also be performed in any of steps 5 to 7.
本技術方案第四實施例提供了一種形成一薄膜電晶體陣 列的方法，其具體包括以下步驟： A fourth embodiment of the present technical solution provides a thin film transistor array The method of the column specifically includes the following steps:
步驟一：製備一奈米碳管原料。 Step 1: Prepare a carbon nanotube raw material.
步驟二：將上述奈米碳管原料添加到溶劑中並進行絮化處理獲得一奈米碳管絮狀結構。 Step 2: adding the above carbon nanotube raw material to a solvent and performing a flocculation treatment to obtain a nano carbon tube floc structure.
步驟三：將上述奈米碳管絮狀結構從溶劑中分離，並對該奈米碳管絮狀結構定型處理以獲得一奈米碳管薄膜。 Step 3: separating the above-mentioned carbon nanotube floc structure from a solvent, and shaping the carbon nanotube floc structure to obtain a carbon nanotube film.
步驟四：提供一絕緣基底。 Step 4: Provide an insulating substrate.
步驟五：形成多個閘極於所述絕緣基底表面。 Step 5: forming a plurality of gates on the surface of the insulating substrate.
步驟六：形成至少一絕緣層覆蓋所述多個閘極。 Step 6: forming at least one insulating layer covering the plurality of gates.
步驟七：鋪設上述奈米碳管薄膜於絕緣層表面，圖案化該奈米碳管薄膜，形成多個奈米碳管層，該多個奈米碳管層與上述多個閘極通過絕緣層相對並絕緣設置。 Step 7: laying the carbon nanotube film on the surface of the insulating layer, patterning the carbon nanotube film to form a plurality of carbon nanotube layers, and the plurality of carbon nanotube layers and the plurality of gates pass through the insulating layer Relative and insulated settings.
步驟八：間隔形成多個源極及多個汲極，並使上述每一奈米碳管層均與一源極及一汲極電連接。 Step 8: forming a plurality of sources and a plurality of drains at intervals, and electrically connecting each of the carbon nanotube layers to a source and a drain.
本技術方案實施例提供的薄膜電晶體及薄膜電晶體陣列的製備方法具有以下優點：其一，本技術方案通過絮化處理即可獲得奈米碳管薄膜作半導體層，無需額外的分散處理步驟，簡化了製備工藝，從而降低薄膜電晶體及薄膜電晶體陣列的生產成本。其二，經絮化處理後獲得的奈米碳管薄膜一定的黏性，因此，可以通過直接黏附的方法將奈米碳管薄膜設置於所需位置，該方法簡單、成本低，因此，本技術方案提供的薄膜電晶體的製備方法具有成本低、環保及節能的優點。其三，所述奈米碳 管層中的奈米碳管相互纏繞且分布均勻，因此，該奈米碳管層用作半導體層時，使得源極和汲極之間具有較高的載子移動率、機械性能好等優點。 The method for preparing a thin film transistor and a thin film transistor array provided by the embodiments of the present technical solution has the following advantages: First, the carbon nanotube film can be obtained as a semiconductor layer by the flocculation treatment without additional dispersing processing steps. The preparation process is simplified, thereby reducing the production cost of the thin film transistor and the thin film transistor array. Secondly, the carbon nanotube film obtained after the flocculation treatment has a certain viscosity, and therefore, the carbon nanotube film can be placed at a desired position by a direct adhesion method, which is simple and low in cost, and therefore, The preparation method of the thin film transistor provided by the technical solution has the advantages of low cost, environmental protection and energy saving. Third, the nano carbon The carbon nanotubes in the tube layer are entangled and evenly distributed. Therefore, when the carbon nanotube layer is used as a semiconductor layer, the carrier and the drain have a high carrier mobility and good mechanical properties. .
綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
10,20‧‧‧薄膜電晶體 10,20‧‧‧film transistor
110,210‧‧‧絕緣基底 110,210‧‧‧Insulation base
120,220‧‧‧閘極 120,220‧‧‧ gate
130,230‧‧‧絕緣層 130,230‧‧‧Insulation
140,240‧‧‧奈米碳管層 140,240‧‧・nano carbon tube layer
151,251‧‧‧源極 151,251‧‧‧ source
152,252‧‧‧汲極 152,252‧‧‧汲polar
圖1為本技術方案第一實施例薄膜電晶體的製備方法的流程圖。 1 is a flow chart of a method for preparing a thin film transistor according to a first embodiment of the present technical solution.
圖2為本技術方案第一實施例薄膜電晶體的製備工藝的流程圖。 2 is a flow chart showing a process for preparing a thin film transistor according to a first embodiment of the present technical solution.
圖3為本技術方案第一實施例薄膜電晶體中奈米碳管薄膜的掃描電鏡照片。 3 is a scanning electron micrograph of a carbon nanotube film in a thin film transistor according to a first embodiment of the present technology.
圖4為本技術方案第二實施例薄膜電晶體的製備方法的流程圖。 4 is a flow chart of a method for preparing a thin film transistor according to a second embodiment of the present technology.
圖5為本技術方案第二實施例薄膜電晶體的製備工藝的流程圖。 FIG. 5 is a flow chart showing a process for preparing a thin film transistor according to a second embodiment of the present technology.
圖6為本技術方案第三實施例薄膜電晶體的製備方法的流程圖。 FIG. 6 is a flow chart of a method for preparing a thin film transistor according to a third embodiment of the present technology.
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