TWI472268B - Plasma source antenna having ferrite structures and plasma generating apparatus employing the same - Google Patents
Plasma source antenna having ferrite structures and plasma generating apparatus employing the same Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
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Description
本發明涉及一種具有鐵氧體結構之電漿源天線和使用其之電漿產生裝置，較具體地說，是涉及一個具有鐵氧體結構之電漿源天線和使用其之電漿產生裝置，該裝置在內置式電感耦合電漿產生裝置之線狀天線單元上設置弧狀的鐵氧體結構，以將從線狀天線單元輻射形成的場集中於加工基板上，藉由高導磁率的鐵氧體結構形成強大的磁場，並可減少線狀天線單元朝加工基板之反方向形成的場所造成的功率損耗。The present invention relates to a plasma source antenna having a ferrite structure and a plasma generating apparatus using the same, and more particularly to a plasma source antenna having a ferrite structure and a plasma generating apparatus using the same, The device is provided with an arc ferrite structure on the linear antenna unit of the built-in inductively coupled plasma generating device to concentrate the field formed by the radiation from the linear antenna unit on the processing substrate by the high magnetic permeability iron The oxygen structure forms a strong magnetic field and reduces the power loss caused by the linear antenna unit toward the location formed in the opposite direction of the processing substrate.
一般而言，電漿產生裝置可分為：將加工基板置於互為相反之上下平板電極之間，並以其電容特性產生電漿的電容耦合電漿(CCP)產生裝置，以及在反應室中以一上方線圈相對一下方平面電極之感應場產生電漿的電感耦合電漿(ICP)產生裝置。In general, the plasma generating device can be divided into: a capacitively coupled plasma (CCP) generating device that places the processed substrate between the lower plate electrodes opposite to each other and generates a plasma with its capacitive characteristics, and in the reaction chamber. An inductively coupled plasma (ICP) generating device that produces a plasma with an upper coil and an inductive field of a lower planar electrode.
特別地，由於電感耦合電漿產生裝置相對電子迴旋共振(ECR)電漿產生裝置或螺旋波激發電漿(HWEP)產生裝置來說，具有較為簡單之構造，並因為可藉其而獲得大尺寸的電漿區域的事實，ICP被廣泛地應用，且對ICP的相關研究也不斷地持續進行中。In particular, since the inductively coupled plasma generating device has a relatively simple configuration with respect to an electron cyclotron resonance (ECR) plasma generating device or a spiral wave excited plasma (HWEP) generating device, and because it can be obtained in a large size The fact that the plasma region is used, ICP is widely used, and related research on ICP is continuously ongoing.
ICP產生裝置具有一個反應室，供蝕刻對象設置於其內的下部，螺旋狀天線源則設置在其最上部並露出於空氣，該ICP產生裝置並具有一個設於天線源與反應室之間 的介質材料，以將其等彼此隔絕並保持反應室之真空狀態。The ICP generating device has a reaction chamber for the lower portion of the object to be etched, the spiral antenna source is disposed at the uppermost portion thereof and exposed to the air, and the ICP generating device has a device disposed between the antenna source and the reaction chamber. The dielectric material is used to isolate them from each other and maintain the vacuum state of the reaction chamber.
然而，這種螺旋天線源卻可能由於蝕刻對象的大尺寸面積化而衍生出各種問題。However, such a helical antenna source may have various problems due to the large size of the etched object.
上述問題是指，隨著蝕刻對象面積增大而增大的反應室面積，其用以保持天線源和反應室之間的真空的介電材料的大小和厚度也需對應增大。因此導致ICP產生裝置的製造成本增加，並且導致天線源及電漿之間的距離增加，以致效率下降。The above problem means that the size and thickness of the dielectric material for maintaining the vacuum between the antenna source and the reaction chamber also need to be correspondingly increased as the area of the reaction chamber increases as the area of the etching object increases. As a result, the manufacturing cost of the ICP generating device is increased, and the distance between the antenna source and the plasma is increased, so that the efficiency is lowered.
此外，大尺寸區域的反應室使得天線源長度需對應增長，此導致施加電力的損耗增加，且由於天線阻抗所造成電漿的不均勻，從而降低了蝕刻速率。In addition, the reaction chamber of the large-sized area requires a corresponding increase in the length of the antenna source, which leads to an increase in the loss of applied power, and the unevenness of the plasma due to the impedance of the antenna, thereby reducing the etching rate.
此外，當所施加的電力是使用13.56MHz電源供應器時，駐波效應(具有相同的振幅和頻率的兩波，以相反方向行進且彼此重疊，使得兩波看起來是靜止的)會從源頭上對應半波的長度產生，從而使其無法形成大尺寸的電漿區域。Furthermore, when the applied power is using a 13.56 MHz power supply, the standing wave effect (two waves with the same amplitude and frequency, traveling in opposite directions and overlapping each other so that the two waves appear to be stationary) will come from the source The length of the corresponding half wave is generated so that it cannot form a large-sized plasma region.
同時，為了解決這些問題，本案申請人申請了韓國專利申請號2003-28849，名稱為"具有內置式線狀天線單元的大面積處理電感耦合電漿處理裝置"，以及韓國專利申請號2004-17227，名稱為"具有電磁鐵之電感耦合電漿處理裝置"，將其各別簡要地介紹如下。At the same time, in order to solve these problems, the applicant of the present application applied for Korean Patent Application No. 2003-28849, entitled "Large-area processing inductively coupled plasma processing apparatus with built-in linear antenna unit", and Korean Patent Application No. 2004-17227 The name is "inductively coupled plasma processing apparatus with electromagnets", and each of them is briefly described as follows.
首先，如第一圖A所示，韓國專利申請號2003-28849所揭露之具有內置式線性天線的大面積處理電感耦合電漿 處理裝置，其包括：一個反應室1，以及多個施加有感應電源的線性天線2，線性天線2外露的兩相鄰端係於反應室1外連接形成一彎曲狀，線性天線2係呈線性地設置在反應室1內的上部且以一個預定的距離與反應室1形成橫向間隔，並利用該裝置之至少一個相鄰於線性天線2的磁性體3，產生與線性天線2所產生的電場交錯的磁場，以使電子以螺旋方式運動。First, as shown in FIG. A, a large-area processing inductively coupled plasma with a built-in linear antenna disclosed in Korean Patent Application No. 2003-28849 The processing device comprises: a reaction chamber 1 and a plurality of linear antennas 2 to which an inductive power source is applied. The two adjacent ends of the linear antenna 2 are connected to the outside of the reaction chamber 1 to form a curved shape, and the linear antenna 2 is linear. Is disposed at an upper portion in the reaction chamber 1 and laterally spaced from the reaction chamber 1 by a predetermined distance, and generates an electric field generated by the linear antenna 2 by using at least one magnetic body 3 adjacent to the linear antenna 2 of the device. Interlaced magnetic fields to move electrons in a spiral.
此時，線性天線2和磁性體3是被石英所形成的保護管4、5所圍繞，以防止線性天線2和磁性體3直接露出於電漿，並且，反應室1內的下部提供有一供加工基板安置的載台6。At this time, the linear antenna 2 and the magnetic body 3 are surrounded by the protective tubes 4, 5 formed of quartz to prevent the linear antenna 2 and the magnetic body 3 from being directly exposed to the plasma, and a lower portion of the reaction chamber 1 is provided with a supply. The stage 6 on which the substrate is placed is processed.
接著，如第一圖B所示，韓國專利申請號2004-17227所揭露之具有電磁鐵的電感耦合電漿處理裝置，包括一個反應室8，其具有一個供蝕刻基板安置的載台7；一組天線源11，其具有複數交錯地平行設置之天線棒9、10，其特點在於每一個天線棒9、10包括複數個設置於其上部之磁性體12。在此情況下，天線棒9、10和磁性體12被石英所形成的保護管13、14所圍繞，以防止天線棒9、10和磁性體12直接露出於電漿。天線源11的一端連接到一個射頻電源供應器15，而天線源11的另一端則接地。Next, as shown in the first figure B, the inductively coupled plasma processing apparatus with an electromagnet disclosed in Korean Patent Application No. 2004-17227 includes a reaction chamber 8 having a stage 7 for arranging the substrate; The antenna source 11 has a plurality of antenna rods 9, 10 arranged in parallel in parallel, and is characterized in that each of the antenna rods 9, 10 includes a plurality of magnetic bodies 12 disposed at an upper portion thereof. In this case, the antenna rods 9, 10 and the magnetic body 12 are surrounded by the protective tubes 13, 14 formed of quartz to prevent the antenna rods 9, 10 and the magnetic body 12 from being directly exposed to the plasma. One end of the antenna source 11 is connected to one RF power supply 15, and the other end of the antenna source 11 is grounded.
然而，在上述文件所揭露的技術內容中，由於輻射場是從線性天線形成，電漿不會完全集中於加工基板，並會朝向加工基板以外的區域激發，從而增加了功率損耗。However, in the technical content disclosed in the above documents, since the radiation field is formed from a linear antenna, the plasma is not completely concentrated on the processed substrate, and is excited toward a region other than the processed substrate, thereby increasing power loss.
另外，由於電漿被激發於不必要的零件上，集中於加 工基板的電漿密度相對較低，以致增加了半導體製程時間。In addition, since the plasma is excited on unnecessary parts, focus on adding The plasma density of the substrate is relatively low, resulting in increased semiconductor processing time.
此外，當在每一個線性天線所形成的場是相對不規則時，此不規則性無法輕易被補償，造成難以於反應室中均勻地產生電漿。Furthermore, when the field formed by each linear antenna is relatively irregular, this irregularity cannot be easily compensated, making it difficult to uniformly generate plasma in the reaction chamber.
本發明之一目的，在於提供一種具有鐵氧體結構之電漿源天線及使用其之電漿產生裝置，藉由在內置式電感耦合電漿產生裝置之線性天線上設置弧狀的鐵氧體結構，可將從線性天線輻射形成的場集中於加工基板上。An object of the present invention is to provide a plasma source antenna having a ferrite structure and a plasma generating apparatus using the same, which is provided with an arc-shaped ferrite on a linear antenna of a built-in inductively coupled plasma generating device. The structure concentrates the field formed by the linear antenna radiation onto the processing substrate.
本發明之另一目的，在於提供一種具有鐵氧體結構之電漿源天線及使用其之電漿產生裝置，藉由具有高導磁率並經過同一方向外部磁場之強烈磁化的鐵氧體結構，可形成強大的磁場並減低線性天線於加工基板反方向形成的場所造成的功率損耗。Another object of the present invention is to provide a plasma source antenna having a ferrite structure and a plasma generating apparatus using the same, which has a ferrite structure having a high magnetic permeability and a strong magnetization of an external magnetic field in the same direction. It can form a strong magnetic field and reduce the power loss caused by the linear antenna in the opposite direction of the processing substrate.
本發明之再一目的，在於提供一種具有鐵氧體結構之電漿源天線及使用其之電漿產生裝置，藉由在內置式線性天線上裝設拱形之鐵氧體結構，以增加電漿的密度及均勻度，可進行大面積高密度電漿製程。Still another object of the present invention is to provide a plasma source antenna having a ferrite structure and a plasma generating apparatus using the same, which is provided with an arc-shaped ferrite structure on a built-in linear antenna to increase electric power The density and uniformity of the slurry can be processed in a large-area high-density plasma process.
本發明的又一目的，在於提供一種具有鐵氧體結構之電漿源天線及使用其之電漿產生裝置，藉由在線性天線上裝設拱形鐵氧體結構，可改善半導體製程的效率及產量。Still another object of the present invention is to provide a plasma source antenna having a ferrite structure and a plasma generating apparatus using the same, which can improve the efficiency of a semiconductor process by providing an arched ferrite structure on a linear antenna. And production.
在一方面，本發明提供了一種電漿源天線，包括：一個線狀天線單元，其包括呈線狀的第一天線及第二天線， 且第一天線及第二天線各以其一端相互連接以形成一個環狀；以及複數個設置於線狀天線單元之第一天線及第二天線上的鐵氧0體結構，用以將第一天線及第二天線輻射形成的場集中於一個方向。In one aspect, the present invention provides a plasma source antenna comprising: a linear antenna unit including a first antenna and a second antenna in a line shape, And the first antenna and the second antenna are connected to each other at one end thereof to form a ring shape; and a plurality of ferrite structures disposed on the first antenna and the second antenna of the linear antenna unit are used for The fields formed by the radiation of the first antenna and the second antenna are concentrated in one direction.
此外，鐵氧體的結構可具有一個拱形。Further, the structure of the ferrite may have an arch shape.
此外，鐵氧體結構的數量可為複數，並可於各鐵氧體結構之間設置鐵氟龍。Further, the number of ferrite structures may be plural, and Teflon may be disposed between the ferrite structures.
此外，各鐵氧體結構可具有不同的大小或厚度。Furthermore, each ferrite structure can have a different size or thickness.
此外，鐵氟龍可由下列任何一種由聚四氟乙烯(polytetrafluoroethylene；PTFE)、過氟烷氧基(perfluoroalkoxy；PFA)、氟化乙烯丙烯(fluoroethylenepropylene；FEP)，以及聚氟化乙二烯(poly vinylidene fluoride；PVDF)所組成的群體中所選出的材料來形成。In addition, Teflon may be composed of polytetrafluoroethylene (PTFE), perfluoroalkoxy (PFA), fluoroethylene propylene (FEP), and polyfluorinated acetylene (poly). Vinylidene fluoride; PVDF) is formed from selected materials in the population.
此外，線狀天線單元可***於一個由石英所形成的感應線圈保護管中。Further, the wire antenna unit can be inserted into an induction coil protection tube formed of quartz.
此外，線狀天線單元可由任何一種由銅、不銹鋼、銀，及鋁所組成的群體中所選出的材料來加以形成。Further, the linear antenna unit may be formed of any material selected from the group consisting of copper, stainless steel, silver, and aluminum.
另一方面，本發明提供了一種電漿產生裝置，其包括一個供電漿於其內產生的反應室；至少一組設置在反應室上部的線狀天線單元，線狀天線單元包括呈線狀之第一天線及第二天線，第一天線及第二天線設置於反應室內的上部且彼此以一個預定的距離間隔地通過反應室，並且第一天線及鄰近的第二天線各以其露出於反應室外的一端彼此連接形成一個環狀。電漿產生裝置還包括：電性連接到線 狀天線單元的另一端的一個電源供應器，以及設置在反應室內之第一天線和第二天線上的複數個鐵氧體結構，用以將反應室內之線狀天線單元輻射形成的場集中於反應室內的加工基板上。In another aspect, the present invention provides a plasma generating apparatus comprising a reaction chamber in which a power supply slurry is generated; at least one set of linear antenna units disposed at an upper portion of the reaction chamber, the linear antenna unit including a linear antenna a first antenna and a second antenna, the first antenna and the second antenna are disposed at an upper portion of the reaction chamber and pass through the reaction chamber at a predetermined distance from each other, and the first antenna and the adjacent second antenna Each of the ends exposed to the outside of the reaction chamber is connected to each other to form a ring shape. The plasma generating device further includes: electrically connected to the wire a power supply at the other end of the antenna unit, and a plurality of ferrite structures disposed on the first antenna and the second antenna in the reaction chamber for concentrating a field formed by radiation of the linear antenna unit in the reaction chamber On the processing substrate in the reaction chamber.
更另一方面，本發明提供了一種電漿產生裝置，其包括一個供電漿於其內產生的反應室；設於反應室內的上部且彼此以一個預定的距離間隔地通過反應室的第一線狀天線單元及第二線狀天線單元，第一線狀天線單元包括呈線狀且彼此相鄰地露出於反應室外的第一天線及第二天線，第一天線及第二天線各以其一端彼此連接而形成一個環狀。第二線狀天線單元包括彼此以一預定距離設置於第一天線及第二天線之間的第三天線及第四天線。該電漿產生裝置更包括：分別電性連接到第一線狀天線單元的另一端及第二線狀天線單元的另一端的複數個電源供應器，以及設置在反應室內之該些天線上的複數個鐵氧體結構，用以將線狀天線單元輻射形成的場集中於反應室內的加工基板上。In still another aspect, the present invention provides a plasma generating apparatus comprising a reaction chamber in which a power supply slurry is generated; a first line disposed in an upper portion of the reaction chamber and passing through the reaction chamber at a predetermined distance from each other The first antenna unit and the second linear antenna unit, the first linear antenna unit includes a first antenna and a second antenna that are linear and adjacent to each other and exposed outside the reaction chamber, and the first antenna and the second antenna Each of them is connected to each other to form a ring shape. The second linear antenna unit includes a third antenna and a fourth antenna that are disposed between the first antenna and the second antenna at a predetermined distance from each other. The plasma generating device further includes: a plurality of power supplies respectively electrically connected to the other end of the first linear antenna unit and the other end of the second linear antenna unit, and the antennas disposed on the antennas in the reaction chamber A plurality of ferrite structures are used to concentrate the field formed by the radiation of the linear antenna elements on the processing substrate in the reaction chamber.
此外，鐵氧體結構可具有一個拱形。Further, the ferrite structure may have an arch shape.
此外，鐵氧體結構的數量可為複數，並可於各鐵氧體結構之間設置鐵氟龍。Further, the number of ferrite structures may be plural, and Teflon may be disposed between the ferrite structures.
此外，各鐵氧體結構可具有不同的大小或厚度。Furthermore, each ferrite structure can have a different size or thickness.
此外，鐵氟龍可由下列任何一種由聚四氟乙烯(polytetrafluoroethylene; PTFE)、過氟烷氧基(perfluoroalkoxy; PFA)、氟化乙烯丙烯(fluoroethylenepropylene; FEP)，以 及聚氟化乙二烯(poly vinylidene fluoride；PVDF)所組成的群體中所選出的材料來形成。In addition, Teflon may be made of polytetrafluoroethylene (PTFE), perfluoroalkoxy (PFA), or fluoroethylene propylene (FEP) by any of the following And a material selected from the group consisting of poly vinylidene fluoride (PVDF) is formed.
此外，電源供應器可在100千赫至30兆赫的頻率範圍內驅動。In addition, the power supply can be driven in the frequency range of 100 kHz to 30 MHz.
此外，該些線狀天線單元的相反端可接地。In addition, opposite ends of the linear antenna elements may be grounded.
此外，分別連接到該些線狀天線單元的電源供應器可獨立地控制以均勻化反應室內之電漿密度。Furthermore, the power supplies respectively connected to the linear antenna elements can be independently controlled to homogenize the plasma density within the reaction chamber.
有關本發明之技術內容，在以下配合參考圖式之一具體實施例中，將可清楚的說明：此外，在本發明的整個描述中，相似元件的標號及其說明並不重覆出現。The technical content of the present invention will be clearly explained in the following detailed description of the specific embodiments of the present invention. In addition, in the entire description of the present invention, the reference numerals of the similar elements and the description thereof are not repeated.
第二圖是依照本發明之第一具體實施例之具有鐵氧體結構之電漿源天線的一個示意圖。第三圖是依照本發明之第二具體實施例之具有鐵氧體結構之電漿源天線的一個示意圖。The second figure is a schematic view of a plasma source antenna having a ferrite structure in accordance with a first embodiment of the present invention. The third figure is a schematic view of a plasma source antenna having a ferrite structure in accordance with a second embodiment of the present invention.
如第二圖所示，依照本發明之第一個具體實施例之電漿源天線100，其包括一個線狀天線單元21，以及複數個形成於線狀天線單元21上的鐵氧體結構23a。As shown in the second figure, a plasma source antenna 100 according to a first embodiment of the present invention includes a linear antenna unit 21, and a plurality of ferrite structures 23a formed on the linear antenna unit 21. .
線狀天線單元21包括呈線狀且各以其一端相互連接以形成一個環狀的一第一天線25及一第二天線27。線狀天線單元21***於石英所形成的感應線圈保護管29中。線狀天線單元21可由任何一個自銅、不銹鋼、銀，及鋁所組成的群體中所選出的材料所形成。The linear antenna unit 21 includes a first antenna 25 and a second antenna 27 which are in a line shape and are connected to each other at one end thereof to form a ring shape. The linear antenna unit 21 is inserted into the induction coil protection tube 29 formed of quartz. The wire antenna unit 21 may be formed of any material selected from the group consisting of copper, stainless steel, silver, and aluminum.
鐵氧體結構23a是設置於第一天線25及第二天線27上的拱狀結構，且具有將第一天線25及第二天線27輻射形成之場集中於一個方向的功能。換句話說，鐵氧體結構23a是用來使線狀天線單元21形成的場從一個並未形成有鐵氧體結構23a的線狀天線單元21表面上向外輻射形成。The ferrite structure 23a is an arch structure provided on the first antenna 25 and the second antenna 27, and has a function of concentrating the fields formed by the radiation of the first antenna 25 and the second antenna 27 in one direction. In other words, the ferrite structure 23a is formed to cause the field formed by the linear antenna unit 21 to radiate outward from the surface of a linear antenna unit 21 on which the ferrite structure 23a is not formed.
另一方面，鐵氧體結構23a可製作為一種平面型式以覆蓋第一天線25及第二天線27兩者，更可製作為各種可將場集中於加工基板上的形狀。在此情況下，鐵氧體結構23a可調整其安裝區域以調整電漿均勻度及電漿特性，藉以改變第一天線25及第二天線27上之電漿均勻度及場方向。On the other hand, the ferrite structure 23a can be formed in a planar type to cover both the first antenna 25 and the second antenna 27, and can be formed into various shapes that can concentrate the field on the processed substrate. In this case, the ferrite structure 23a can adjust its mounting area to adjust the plasma uniformity and plasma characteristics, thereby changing the plasma uniformity and field direction on the first antenna 25 and the second antenna 27.
此外，鐵氧體結構23a是一種具有高導磁率的鐵氧磁物質，並在具有同一的磁場方向的外部磁場中經過強烈的磁化。因此，相對於傳統的電漿源天線來說，具有鐵氧體結構23a的電漿源天線100可形成一個相對較強的磁場，並可用以產生高密度電漿。Further, the ferrite structure 23a is a ferromagnetic substance having a high magnetic permeability and is strongly magnetized in an external magnetic field having the same magnetic field direction. Therefore, the plasma source antenna 100 having the ferrite structure 23a can form a relatively strong magnetic field and can be used to generate high-density plasma with respect to a conventional plasma source antenna.
如第三圖所示，依照本發明之第二具體實施例的電漿源天線101，包括一第一天線25、一第二天線27，以及複數個設置於第一天線25及第二天線27上的鐵氧體結構23b。As shown in the third figure, the plasma source antenna 101 according to the second embodiment of the present invention includes a first antenna 25, a second antenna 27, and a plurality of first antennas 25 and The ferrite structure 23b on the two antennas 27.
相較於本發明第一具體實施例之電漿源天線100來說，該些鐵氧體結構23b是局部地安裝，且是以具有不同大小和厚度的方式來安裝，藉以調整電漿的均勻度。此外，包括鐵氟龍31等絕緣材料可插設於該些相鄰的鐵氧體 結構23B之間，藉以調整電漿的均勻度。在本實施例中，鐵氟龍可由任何一種由聚四氟乙烯(polytetrafluoroethylene；PTFE)、過氟烷氧基(perfluoroalkoxy；PFA)、氟化乙烯丙烯(fluoroethylenepropylene；FEP)，以及聚氟化乙二烯(poly vinylidene fluoride；PVDF)所組成的群體中所選出的材料來形成。Compared with the plasma source antenna 100 of the first embodiment of the present invention, the ferrite structures 23b are partially installed and installed in different sizes and thicknesses to adjust the uniformity of the plasma. degree. In addition, an insulating material such as Teflon 31 may be interposed in the adjacent ferrites. Between the structures 23B, the uniformity of the plasma is adjusted. In this embodiment, the Teflon can be any one of polytetrafluoroethylene (PTFE), perfluoroalkoxy (PFA), fluoroethylene propylene (FEP), and polyfluorinated ethylene. A material selected from a group consisting of poly vinylidene fluoride (PVDF) is formed.
相較於本發明第一具體實施例之電漿源天線100來說，電漿源天線101可輕易安裝，且部分的該些鐵氧體結構23b是可拆卸式的安裝以均勻地控制從第一天線25及第二天線27所產生的電漿。Compared with the plasma source antenna 100 of the first embodiment of the present invention, the plasma source antenna 101 can be easily installed, and part of the ferrite structures 23b are detachably mounted to uniformly control from the first The plasma generated by one antenna 25 and the second antenna 27.
雖然上述具體實施例說明的是採用環狀之電漿源天線100、101，但必要時，也可將電漿源天線形成為直線形或梳形。此外，鐵氧體結構23a及23b也可依製程所需而安裝於一個螺旋形線狀天線單元上。此外，鐵氧體結構23b也可製作為一種平面形狀以覆蓋第一天線25及第二天線27兩者，或是各種可用以將場集中於加工基板上的不同形狀。Although the above specific embodiment illustrates the use of the annular plasma source antennas 100, 101, the plasma source antenna may be formed into a straight or comb shape if necessary. In addition, the ferrite structures 23a and 23b can also be mounted on a spiral linear antenna unit as required by the process. In addition, the ferrite structure 23b can also be fabricated in a planar shape to cover both the first antenna 25 and the second antenna 27, or various shapes that can be used to concentrate the field on the processing substrate.
接下來，配合如第四圖至第八圖所示，對另一個依照本發明之具體實施例的電漿產生裝置進行詳細說明。Next, in conjunction with the fourth to eighth figures, another plasma generating apparatus according to a specific embodiment of the present invention will be described in detail.
第四圖是依照本發明第一具體實施例之電漿產生裝置的一示意圖。第五圖則是第四圖中沿A-A’的一個剖視圖。The fourth figure is a schematic view of a plasma generating apparatus in accordance with a first embodiment of the present invention. The fifth drawing is a cross-sectional view along A-A' in the fourth figure.
如第四圖與第五圖所示，反應室41形成有一個電漿產生空間，該空間的一個較低的部分安裝有一個載台43，該載台43提供進行蝕刻或沉積製程的加工基板設置於其上。 在本實施例中，加工基板可以是厚度300毫米或以上的一個用來製作半導體元件的晶圓，或者是用以製作平面顯示器的一個基板。反應室41的底部或是側壁上的一部分形成有一個連接到一個真空泵(圖未示)的排氣管。As shown in the fourth and fifth figures, the reaction chamber 41 is formed with a plasma generating space, and a lower portion of the space is mounted with a stage 43 which provides a processing substrate for performing an etching or deposition process. Set on it. In the present embodiment, the processing substrate may be a wafer for fabricating a semiconductor element having a thickness of 300 mm or more, or a substrate for fabricating a flat display. A portion of the bottom of the reaction chamber 41 or a portion of the side wall is formed with an exhaust pipe connected to a vacuum pump (not shown).
載台43被裝設為可垂直移動，並可形成為一個靜電吸盤。載台43連接有一用以提供偏壓電源的偏壓電源供應器，且進一步具有一個安裝於載台43以測量偏壓的偏壓量測裝置(圖未示)。The stage 43 is mounted to be vertically movable and can be formed as an electrostatic chuck. The stage 43 is connected to a bias power supply for supplying a bias power, and further has a bias measuring means (not shown) mounted on the stage 43 for measuring a bias voltage.
同時，反應室41內的上部安裝有複數個通過反應室41的線狀天線單元21，且其兩端設置成露出於反應室41的一個表面之外。線狀天線單元21的第一天線25和第二天線27於反應室41外以串聯方式相互連接形成一個環狀。At the same time, a plurality of linear antenna units 21 passing through the reaction chamber 41 are mounted on the upper portion of the reaction chamber 41, and both ends thereof are disposed to be exposed outside one surface of the reaction chamber 41. The first antenna 25 and the second antenna 27 of the linear antenna unit 21 are connected to each other in series in a ring shape outside the reaction chamber 41 to form a ring shape.
第一天線25及第二天線27各別地***於感應線圈保護管29中，並在反應室41內的上部保持其線性狀態。線狀天線單元21的一端連接到一個電源供應器47以進行感應放電，而線狀天線單元21未連接電源供應器47的另一端則接地。電源供應器47是在100千赫至30兆赫的頻率範圍內進行驅動。The first antenna 25 and the second antenna 27 are inserted into the induction coil protection tube 29, respectively, and maintain their linear state in the upper portion of the reaction chamber 41. One end of the linear antenna unit 21 is connected to one power supply 47 for inductive discharge, and the other end of the linear antenna unit 21 not connected to the power supply 47 is grounded. The power supply 47 is driven in a frequency range of 100 kHz to 30 MHz.
當電源供應器47低於30MHz的頻率範圍內進行驅動時(舉例來說，4兆赫或2兆赫)，線狀天線單元21的阻抗特性和電流分佈特性會由於頻率所致之電漿源天線100發熱減少而改善，並改善從產生的電漿吸收的功率特性。When the power supply 47 is driven in a frequency range lower than 30 MHz (for example, 4 MHz or 2 MHz), the impedance characteristics and current distribution characteristics of the linear antenna unit 21 may be due to the frequency of the plasma source antenna 100. The heat is reduced to improve and improve the power characteristics absorbed from the generated plasma.
線狀天線單元21可由任何一個由銅、不銹鋼、銀，及鋁所組成的群體中所選出的材料來形成，而電感線圈保護 管29則由可以高度忍受濺射的石英所形成。The linear antenna unit 21 can be formed of any material selected from the group consisting of copper, stainless steel, silver, and aluminum, and the inductor coil is protected. Tube 29 is formed of quartz which is highly resistant to sputtering.
鐵氧體結構23a分別設置於第一天線25及第二天線27上。鐵氧體結構23a具有一個拱形的形狀，且具有將第一天線25及第二天線27輻射形成的場集中於載台43上之加工基板上的功能。The ferrite structures 23a are disposed on the first antenna 25 and the second antenna 27, respectively. The ferrite structure 23a has an arch shape and has a function of concentrating a field formed by the radiation of the first antenna 25 and the second antenna 27 on the processed substrate on the stage 43.
另一方面，鐵氧體結構23a可製成一種平面形狀以覆蓋第一天線25及第二天線27兩者。在此情況中，平面形鐵氧體結構23a可調整其安裝區域以調整電漿均勻度和電漿特性，並可調整其安裝角度以變化電漿均勻度及第一天線25及第二天線27上的場方向。On the other hand, the ferrite structure 23a can be formed in a planar shape to cover both the first antenna 25 and the second antenna 27. In this case, the planar ferrite structure 23a can adjust its mounting area to adjust plasma uniformity and plasma characteristics, and can adjust its mounting angle to change plasma uniformity and the first antenna 25 and the next day. The field direction on line 27.
因此，由於鐵氧體具有的高導磁率，使得具有鐵氧體結構23a的電漿源天線100可形成較傳統電漿源天線為強的磁場，且可產生高電漿密度與均勻度，從而減少加工基板反方向形成的場所造成的功率損耗。因此，它可提高對加工基板進行蝕刻製程或沉積製程的效率，從而提高半導體元件的產量。Therefore, due to the high magnetic permeability of the ferrite, the plasma source antenna 100 having the ferrite structure 23a can form a stronger magnetic field than the conventional plasma source antenna, and can generate high plasma density and uniformity, thereby Reduce the power loss caused by the location where the substrate is formed in the opposite direction. Therefore, it can improve the efficiency of the etching process or the deposition process of the processed substrate, thereby increasing the yield of the semiconductor device.
在本實施例中，反應室41具有一個長方體形，電漿源天線100具有四個相互獨立形成的環路，其中該些環路可具有相同的尺寸，並且在必要時，設於兩外側的環路可與設於內側的兩環路具有不同的尺寸。藉由調整設置在反應室41兩外側的環路的大小，可調整反應室41中之電漿密度及均勻度。最終，藉由調整環路的數量或尺寸，可適當地控制從超大尺寸電漿產生裝置所產生之電漿密度和均勻度。In the present embodiment, the reaction chamber 41 has a rectangular parallelepiped shape, and the plasma source antenna 100 has four loops formed independently of each other, wherein the loops may have the same size and, if necessary, on both outer sides. The loop can be of a different size than the two loops provided on the inside. The plasma density and uniformity in the reaction chamber 41 can be adjusted by adjusting the size of the loops disposed on both outer sides of the reaction chamber 41. Finally, by adjusting the number or size of the loops, the plasma density and uniformity generated from the oversized plasma generating apparatus can be appropriately controlled.
同時，可將一個用以測量電漿密度和均勻度的量測裝置49，例如Langmuir探針，安裝在反應室41的一個較低部份，以測量離子飽和電流與電子數量，從而測量電漿密度和均勻度。At the same time, a measuring device 49 for measuring plasma density and uniformity, such as a Langmuir probe, can be installed in a lower portion of the reaction chamber 41 to measure the ion saturation current and the number of electrons, thereby measuring the plasma. Density and uniformity.
第六圖是具有本發明第二具體實施例之電漿源天線的電漿產生裝置的示意圖。Figure 6 is a schematic view of a plasma generating apparatus having a plasma source antenna according to a second embodiment of the present invention.
如第六圖所示，複數鐵氧體結構23b被安裝在第一天線25及第二天線27上。相較於本發明第一具體實施例的電漿源天線100而言，複數個鐵氧體結構23b是局部地安裝，且在該些相鄰的鐵氧體結構23b之間設置有鐵氟龍31。As shown in the sixth figure, the plurality of ferrite structures 23b are mounted on the first antenna 25 and the second antenna 27. Compared with the plasma source antenna 100 of the first embodiment of the present invention, a plurality of ferrite structures 23b are partially installed, and Teflon is disposed between the adjacent ferrite structures 23b. 31.
電漿源天線101可被較為輕易地安裝，且部分鐵氧體結構23b是可拆卸地安裝以均勻地控制從第一天線25及第二天線27產生出的電漿。由於其他相關元件與本發明第一具體實施例的電漿源天線相同，其說明在此處被省略。The plasma source antenna 101 can be mounted relatively easily, and a part of the ferrite structure 23b is detachably mounted to uniformly control the plasma generated from the first antenna 25 and the second antenna 27. Since other related elements are the same as the plasma source antenna of the first embodiment of the present invention, the description thereof is omitted here.
第七圖及第八圖是另一個具有本發明第一及第二具體實施例之電漿源天線的電漿產生裝置的示意圖。7 and 8 are schematic views of another plasma generating apparatus having the plasma source antennas of the first and second embodiments of the present invention.
如第七圖及第八圖所示，電漿產生裝置包括至少一第一線狀天線單元21，線狀天線單元21包括具有線性形狀的一第一天線25和一第二天線27，第一天線25第二天線27設置在具有電漿產生空間的反應室41內之上部並以一個預定的距離相互間隔地通過反應室41，且露出於反應室41外以連接相鄰之第一天線25及第二天線27的一端，而另一端電連接於一個電源供應器47；而第二線狀天線單元53具有複 數個以一個預定的距離彼此間隔地設置於天線25、27之間的額外天線51，且該些額外天線51彼此連接形成一單體。必要時，該些額外天線51可作為第三、第四，或第五天線等。As shown in the seventh and eighth figures, the plasma generating device includes at least one first linear antenna unit 21, and the linear antenna unit 21 includes a first antenna 25 and a second antenna 27 having a linear shape. The first antenna 25 is disposed at an upper portion in the reaction chamber 41 having a plasma generating space and passes through the reaction chamber 41 at a predetermined distance from each other, and is exposed outside the reaction chamber 41 to connect adjacent ones. One end of the first antenna 25 and the second antenna 27, and the other end is electrically connected to a power supply 47; and the second linear antenna unit 53 has a complex A plurality of additional antennas 51 disposed between the antennas 25, 27 at a predetermined distance from each other, and the additional antennas 51 are connected to each other to form a single body. The additional antennas 51 may serve as a third, fourth, or fifth antenna or the like as necessary.
電源供應器55連接到第二次線狀天線單元53的一端，而鐵氧體結構23a及23b係設置於形成於反應室41內的天線25、27，及51上，以將線性天線25，27和51向外輻射形成的場集中於反應室41內的加工基板上。The power supply 55 is connected to one end of the second linear antenna unit 53, and the ferrite structures 23a and 23b are disposed on the antennas 25, 27, and 51 formed in the reaction chamber 41 to connect the linear antenna 25, The fields formed by the outward radiation of 27 and 51 are concentrated on the processed substrate in the reaction chamber 41.
類似環狀電漿源天線，梳形電漿源天線也可有效地減少一個由電源供應器所供應的射頻電源之供電通路，因而完全排除駐波效應。此外，可藉使用鐵氧體結構而防止功率損失並增加電漿密度和均勻度。Similar to the ring-shaped plasma source antenna, the comb-shaped plasma source antenna can also effectively reduce the power supply path of the RF power supply supplied by the power supply, thereby completely eliminating the standing wave effect. In addition, the use of a ferrite structure can prevent power loss and increase plasma density and uniformity.
雖然目前由發明人所構思的本發明已藉由上述數個具體實施例所詳細敘述，但不限於此，本發明亦可以各種未偏離本發明之範圍的形式來呈現。舉例來說，具體實施例中的鐵氧體結構是以安裝在應用於內置式電感耦合電漿產生裝置的天線上來進行描述。然而，鐵氧體結構亦可廣泛用於外置式電感耦合電漿產生裝置或類似裝置的天線上，其中該外置式電感耦合電漿產生裝置是指一種結合電感耦合電漿產生裝置與電容耦合電漿產生裝置的電漿產生裝置。While the present invention has been described in detail by the present invention, the present invention is not limited thereto, and the present invention may be embodied in various forms without departing from the scope of the invention. For example, the ferrite structure in the specific embodiment is described as being mounted on an antenna applied to a built-in inductively coupled plasma generating device. However, the ferrite structure can also be widely used in an antenna of an external inductively coupled plasma generating device or the like. The external inductively coupled plasma generating device refers to a combination of an inductively coupled plasma generating device and a capacitive coupling device. A plasma generating device for a slurry generating device.
如上所述，本發明提供了一種具有鐵氧體結構之電漿源天線和使用其之電漿產生裝置。電漿源天線包括形成於線狀天線單元上的鐵氧體結構，而電漿產生裝置採用內置 式電感耦合電漿源天線作為電漿源天線，其應用於半導體器件製造過程中以蝕刻或沉積300毫米或更大的晶圓，或是下世代平面顯示器製程。此外，鐵氧體結構亦可廣泛應用於外置式電感耦合電漿產生裝置或類似裝置的天線上，其中該外置式電感耦合電漿產生裝置是指一種結合電感耦合電漿產生裝置與電容耦合電漿產生裝置的電漿產生裝置。As described above, the present invention provides a plasma source antenna having a ferrite structure and a plasma generating apparatus using the same. The plasma source antenna includes a ferrite structure formed on the wire antenna unit, and the plasma generating device is built in Inductively coupled plasma source antennas are used as plasma source antennas for use in semiconductor device fabrication processes to etch or deposit wafers of 300 mm or larger, or next generation flat panel display processes. In addition, the ferrite structure can also be widely applied to an antenna of an external inductively coupled plasma generating device or the like, wherein the external inductively coupled plasma generating device refers to a combination of an inductively coupled plasma generating device and a capacitive coupling device. A plasma generating device for a slurry generating device.
可從上述看出，在本發明具有鐵氧體結構的電漿源天線與使用其之電漿產生裝置中，拱狀鐵氧體結構可安裝在內置式電感耦合電漿產生成裝置的線狀天線單元上，將線狀天線單元輻射形成的場集中於加工基板上。It can be seen from the above that in the plasma source antenna having the ferrite structure of the present invention and the plasma generating apparatus using the same, the arched ferrite structure can be installed in the line shape of the built-in inductively coupled plasma generating device. On the antenna unit, the field formed by the radiation of the linear antenna unit is concentrated on the processing substrate.
此外，由於具有高導磁率且經過具有同一磁場方向的外部磁場之強烈磁化後的鐵氧體結構，可使具有鐵氧體結構的電漿源天線和使用其之電漿產生裝置形成一個強烈磁場，並可減少線狀天線單元朝加工基板反向形成的場所造成的功率耗損。In addition, a plasma source antenna having a ferrite structure and a plasma generating device using the same can form a strong magnetic field due to a ferrite structure having a high magnetic permeability and passing through a strongly magnetized external magnetic field having the same magnetic field direction. And can reduce the power consumption caused by the position where the linear antenna unit is formed in the reverse direction of the processing substrate.
此外，在具有鐵氧體結構的電漿源天線和使用其之電漿產生裝置中，拱形鐵氧體結構可以安裝於內置式的線狀天線單元上，以增加電漿密度和均勻度，以進行大尺寸高密度電漿製程。Further, in a plasma source antenna having a ferrite structure and a plasma generating apparatus using the same, the arched ferrite structure may be mounted on a built-in linear antenna unit to increase plasma density and uniformity. For large-size high-density plasma processing.
此外，在具有鐵氧體結構的電漿源天線和使用其之電漿產生裝置中，拱形鐵氧體結構可以安裝在線狀天線單元上，以提高半導體製程的效率和產量。Further, in a plasma source antenna having a ferrite structure and a plasma generating apparatus using the same, an arched ferrite structure can be mounted on the linear antenna unit to improve the efficiency and yield of the semiconductor process.
雖然本發明已藉其數個具體實施例進行說明，然而該 技術領域之通常知識者應當清楚知道，在未明顯偏離其後所附加之本發明申請專利範圍及其等效變化的精神和範圍下所作的各種修改，仍屬本發明之涵蓋範圍之內。Although the invention has been described in terms of several specific embodiments thereof, It will be apparent to those skilled in the art that various modifications that come within the spirit and scope of the invention and the scope of the inventions.
<先前技術><Prior technology>
1‧‧‧反應室1‧‧‧Reaction room
2‧‧‧線性天線2‧‧‧linear antenna
3‧‧‧磁性體3‧‧‧Magnetic body
4、5‧‧‧保護管4, 5‧‧‧ protective tube
6‧‧‧載台6‧‧‧ stage
7‧‧‧載台7‧‧‧ stage
8‧‧‧反應室8‧‧‧Reaction room
9、10‧‧‧天線棒9, 10‧‧‧ antenna rod
11‧‧‧天線源11‧‧‧Antenna source
12‧‧‧磁性體12‧‧‧Magnetic body
13、14‧‧‧保護管13, 14‧‧‧ protective tube
15‧‧‧電源供應器15‧‧‧Power supply
<本發明><present invention>
100‧‧‧電漿源天線100‧‧‧ Plasma source antenna
101‧‧‧電漿源天線101‧‧‧ Plasma source antenna
21‧‧‧線狀天線單元21‧‧‧Wire antenna unit
23a‧‧‧鐵氧體結構23a‧‧‧ Ferrite structure
23b‧‧‧鐵氧體結構23b‧‧‧ Ferrite structure
25‧‧‧第一天線25‧‧‧first antenna
27‧‧‧第二天線27‧‧‧second antenna
29‧‧‧感應線圈保護管29‧‧‧Induction coil protection tube
41‧‧‧反應室41‧‧‧Reaction room
43‧‧‧載台43‧‧‧ stage
47‧‧‧電源供應器47‧‧‧Power supply
49‧‧‧量測裝置49‧‧‧Measurement device
51‧‧‧天線51‧‧‧Antenna
53‧‧‧線狀天線單元53‧‧‧Wire antenna unit
55‧‧‧電源供應器55‧‧‧Power supply
第一圖A 為傳統具有內置式線性天線的電漿產生裝置的示意圖；第一圖B 為傳統使用磁場的超大型電漿產生裝置的示意圖；第二圖 為依據本發明第一具體實施例之具有鐵氧體結構的電漿源天線的示意圖；第三圖 為依據本發明第二具體實施例之具有鐵氧體結構之電漿源天線的示意圖；第四圖 為具有本發明第一具體實施例之電漿源天線的電漿產生裝置的示意圖；第五圖 為第四圖中沿A-A’之剖視圖；第六圖 為具有本發明第二具體實施例之電漿源天線的電漿產生裝置的示意圖；第七圖 為另一具有本發明第一具體實施例之電漿源天線的電漿產生裝置的示意圖；及第八圖 為另一具有本發明第二具體實施例之電漿源天線的電漿產生裝置的示意圖。The first figure A is a schematic diagram of a conventional plasma generating device with a built-in linear antenna; the first drawing B is a schematic diagram of a conventional ultra-large plasma generating device using a magnetic field; the second figure is a first embodiment according to the present invention. Schematic diagram of a plasma source antenna having a ferrite structure; FIG. 3 is a schematic diagram of a plasma source antenna having a ferrite structure according to a second embodiment of the present invention; and FIG. 4 is a first embodiment of the present invention A schematic view of a plasma generating device of a plasma source antenna; a fifth view is a cross-sectional view taken along line A-A' in the fourth figure; and a sixth view is a plasma having a plasma source antenna according to the second embodiment of the present invention. A schematic diagram of a generating device; a seventh schematic diagram of another plasma generating apparatus having a plasma source antenna according to a first embodiment of the present invention; and an eighth embodiment of another plasma having a second embodiment of the present invention Schematic diagram of the plasma generating device of the source antenna.
100‧‧‧電漿源天線100‧‧‧ Plasma source antenna
21‧‧‧線狀天線單元21‧‧‧Wire antenna unit
23a‧‧‧鐵氧體結構23a‧‧‧ Ferrite structure
25‧‧‧第一天線25‧‧‧first antenna
27‧‧‧第二天線27‧‧‧second antenna
29‧‧‧感應線圈保護管29‧‧‧Induction coil protection tube
41‧‧‧反應室41‧‧‧Reaction room
43‧‧‧載台43‧‧‧ stage
47‧‧‧電源供應器47‧‧‧Power supply
49‧‧‧量測裝置49‧‧‧Measurement device
Claims (10)
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| KR1020070126968A KR101021480B1 (en) | 2007-12-07 | 2007-12-07 | Plasma sources having ferrite structures and plasma generating apparatus employing the same |
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| WO2011041087A2 (en) * | 2009-09-29 | 2011-04-07 | Applied Materials, Inc. | Inductively-coupled plasma (icp) resonant source element |
| TWI424795B (en) * | 2009-12-21 | 2014-01-21 | Ind Tech Res Inst | Plasma excitation device apparatus and method |
| WO2012033191A1 (en) * | 2010-09-10 | 2012-03-15 | 株式会社イー・エム・ディー | Plasma processing apparatus |
| JP5659808B2 (en) * | 2011-01-17 | 2015-01-28 | 株式会社Ihi | Array antenna type CVD plasma apparatus and array antenna unit |
| JP5659809B2 (en) * | 2011-01-17 | 2015-01-28 | 株式会社Ihi | Auxiliary jig and array antenna type CVD plasma apparatus |
| KR101383166B1 (en) * | 2012-02-13 | 2014-04-09 | (주)뉴옵틱스 | Apparatus for extracting the ion beam source and for treating the substrate by ion beam source using ICP antenna of pole type |
| KR101467093B1 (en) * | 2013-04-18 | 2014-12-01 | 성균관대학교산학협력단 | Inner-type linear antenna, antenna assembly to adjust plasma density and plasma apparatus using thereof |
| GB2590613B (en) * | 2019-12-16 | 2023-06-07 | Dyson Technology Ltd | Method and apparatus for use in generating plasma |
| GB2590614B (en) * | 2019-12-16 | 2022-09-28 | Dyson Technology Ltd | Method and apparatus for use in generating plasma |
| GB2599393A (en) * | 2020-09-30 | 2022-04-06 | Dyson Technology Ltd | Method and apparatus for sputter deposition |
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