TWI466313B - Methods of forming packaged semiconductor light emitting devices having multiple optical elements by compression molding - Google Patents
Methods of forming packaged semiconductor light emitting devices having multiple optical elements by compression molding Download PDFInfo
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- TWI466313B TWI466313B TW097104985A TW97104985A TWI466313B TW I466313 B TWI466313 B TW I466313B TW 097104985 A TW097104985 A TW 097104985A TW 97104985 A TW97104985 A TW 97104985A TW I466313 B TWI466313 B TW I466313B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/18—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/0022—Multi-cavity moulds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2011/00—Optical elements, e.g. lenses, prisms
- B29L2011/0016—Lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Description
此發明係關於半導體發光裝置及其製造方法，而更特定言之，係關於用於半導體發光裝置之封裝及封裝方法。This invention relates to a semiconductor light emitting device and a method of fabricating the same, and more particularly to a packaging and packaging method for a semiconductor light emitting device.
諸如發光二極體(LED)或雷射二極體之半導體發光裝置已廣泛用於許多應用。如熟習此項技術者所熟知，半導體發光裝置包括經組態用以在其加電後發射相干及/或不相干光之一或多個半導體層。吾等還習知，半導體發光裝置通常係封裝成提供外部電連接、散熱片、透鏡或波導、環境保護及/或其他功能。Semiconductor light-emitting devices such as light-emitting diodes (LEDs) or laser diodes have been widely used in many applications. As is well known to those skilled in the art, a semiconductor light emitting device includes one or more semiconductor layers configured to emit coherent and/or incoherent light after it is powered up. It is also known in the art that semiconductor light emitting devices are typically packaged to provide external electrical connections, heat sinks, lenses or waveguides, environmental protection, and/or other functions.
例如，吾等習知提供用於半導體發光裝置之兩塊式封裝，其中將半導體發光裝置黏著於包括氧化鋁、氮化鋁及/或其他材料之一基板上，該基板包括在其上面的電迹線，以便提供用於半導體發光裝置之外部連接。例如使用黏膠將可包含鍍銀之銅的一第二基板黏著在該第一基板上而包圍該半導體發光裝置。可將一透鏡放置於該第二基板上而在該半導體發光裝置之上。Loh之申請序號US 2004/0041222 A1內說明瞭具有上述兩塊式封裝的發光二極體，其標題為"電源表面黏著發光晶粒封裝"，2004年3月4日公佈，該專利案已讓渡給本發明之受讓人，其全部揭示內容以引用方式併入於此，如同在本文完整說明。For example, we have conventionally provided a two-piece package for a semiconductor light-emitting device in which a semiconductor light-emitting device is adhered to a substrate comprising one of aluminum oxide, aluminum nitride, and/or other material, the substrate including the electricity thereon Traces to provide an external connection for the semiconductor light emitting device. For example, a second substrate, which may include silver-plated copper, is adhered to the first substrate to surround the semiconductor light-emitting device. A lens can be placed on the second substrate above the semiconductor light emitting device. Luh's application serial number US 2004/0041222 A1 describes a light-emitting diode having the above two-package package, entitled "Power Surface Adhesive Light-Emitting Chip Package", published on March 4, 2004, the patent case has been The assignee of the present invention is hereby incorporated by reference in its entirety in its entirety herein in its entirety herein in its entirety herein.
在針對半導體發光裝置採用多部分黏著封裝之情況下，不同部分一般係由不同材料製成。因此，針對此類封裝之 熱阻可能較高而在一封裝內的各個組件之間可能產生一熱性失配，從而可能令一封裝產生可靠性問題。例如，可能在介於一散熱片或腔之一銅金屬與一主體(其中黏著此一散熱片或腔)之一塑膠之間的一介面處產生問題。此外，裝配可能會因針對該封裝之增加的塊件數目而更加複雜。此外，在使用一薄片金屬光腔之情況下，一般僅可在一有限的深度及形狀組態範圍內製造一腔。此類多部分封裝還可具有一較大的光腔空間，從而使得所使用的囊封材料體積更大，從而可能使得與溫度循環期間囊封物內的分層及/或氣泡形成相關之問題增加。In the case of a multi-part adhesive package for a semiconductor light emitting device, the different portions are typically made of different materials. Therefore, for such packages The thermal resistance may be high and a thermal mismatch may occur between the various components within a package, which may cause reliability problems in a package. For example, a problem may arise at an interface between a piece of copper metal in one of the heat sinks or cavities and one of the bodies of the body in which the heat sink or cavity is adhered. In addition, the assembly may be more complicated by the increased number of blocks for the package. Furthermore, in the case of a sheet metal cavity, it is generally only possible to make a cavity within a limited depth and shape configuration. Such multi-part packages may also have a larger optical cavity space, resulting in a larger volume of encapsulating material used, potentially causing problems associated with delamination and/or bubble formation within the encapsulant during temperature cycling. increase.
使用藉由黏合劑附著之一預模製透鏡可能會在所製成產品之強固性及可靠性方面遇到某些問題。例如，此類裝置之製程可能本質上不一致而所產生的封裝可能不太強固及/或可靠。吾等還習知，藉由使用借助於形成該透鏡時所使用之一樹脂的黏度之一施配方法來形成該透鏡。Pre-molding a lens using one of the adhesive attachments may encounter certain problems in terms of the robustness and reliability of the finished product. For example, the process of such devices may be inconsistent in nature and the resulting package may be less robust and/or reliable. It is also known in the art to form the lens by using one of the methods of dispensing the viscosity of one of the resins used in forming the lens.
在某些應用中，較佳的可以係將該LED黏著於一基板(例如，一陶瓷基板、一金屬核心印刷電路板(MCPCB)、一撓性電路基板及/或一引線框架)之一表面上，而不使用一反射器杯。但是，在不提供此類結構之情況下，可能更難以形成及/或固定一透鏡，因為上述各種方法可能不太適合在該LED並非定位於一腔內之情況下使用。In some applications, it may be preferable to adhere the LED to a surface of a substrate (eg, a ceramic substrate, a metal core printed circuit board (MCPCB), a flexible circuit substrate, and/or a lead frame). Instead of using a reflector cup. However, without providing such a structure, it may be more difficult to form and/or secure a lens, as the various methods described above may not be well suited for use where the LED is not positioned within a cavity.
吾等還習知，使用環氧樹脂之轉移模製來囊封特定的低功率LED封裝，例如可從Hewlett Packard公司購得之微型表面可黏著裝置。此類裝置上的環氧樹脂可向該封裝提供 結構強度以及囊封其內部的裝置。但是，環氧樹脂趨向於因一般由某些半導體發光裝置產生的藍色光之電磁能量而劣化，而可能因此變成具有較小的光透射性。因此，所得的封裝可能在一相對較短的時間週期變得較暗。因此，對於囊封發射藍色光的裝置而言，環氧樹脂可能係一不太有吸引力的選項。此外，環氧樹脂一般具有與聚矽氧軟凝膠的熱膨脹係數(CTE)失配之一問題，聚矽氧軟凝膠可用於對LED晶片及其接合導線進行接面塗布以作為第一囊封物層。We also know that a transfer molding of epoxy resin is used to encapsulate a particular low power LED package, such as a micro surface mountable device available from Hewlett Packard. Epoxy on such devices can be supplied to the package Structural strength and means of encapsulating the interior. However, epoxy resins tend to degrade due to the electromagnetic energy of blue light that is typically generated by certain semiconductor light-emitting devices, and may therefore become less light transmissive. Therefore, the resulting package may become darker for a relatively short period of time. Thus, for devices that encapsulate blue light, epoxy may be a less attractive option. In addition, epoxy resins generally have a problem with the thermal expansion coefficient (CTE) mismatch of polyoxyxide soft gels, which can be used to coat the LED wafers and their bonding wires as a first capsule. Sealing layer.
吾等還習知，使用壓鑄來以環氧樹脂囊封LED裝置。此程序一般僅可應用於一開放的室，在此情況下包含於一杯中的環氧樹脂可發生固化，而可以將一引線框架***該杯內部並在該環氧樹脂固化時加以壓鑄。在固化期間，液態環氧樹脂之一位準一般可因化學反應及體積縮小而對其自身進行自由調整。We also know that die casting is used to encapsulate the LED device with epoxy resin. This procedure is generally only applicable to an open chamber where the epoxy contained in a cup can be cured, and a lead frame can be inserted into the interior of the cup and die cast as the epoxy cures. During curing, one of the liquid epoxy levels is generally free to adjust itself due to chemical reactions and volume reduction.
另一方法使用由聚矽氧形成之壓縮模製透鏡。藉由使用壓縮模製，可以將一壓縮模製透鏡陣列放置於在一基板或晶圓上之一匹配的LED晶片陣列上。但是，傳統的透鏡壓縮模製一般需要使用在該基板的背部側而非前部側上之電接點，因為該模製材料可延伸橫跨前部側接點而限制與前部側接點形成電連接。用以形成此類傳統壓縮模製透鏡之一壓縮模製程序可從日本Kyoto的TOWA公司獲得。Another method uses a compression molded lens formed of polyfluorene oxide. By using compression molding, a compression molded lens array can be placed on a matching array of LED wafers on a substrate or wafer. However, conventional lens compression molding generally requires the use of electrical contacts on the back side of the substrate rather than the front side because the molding material can extend across the front side contacts to limit the front side contacts. Form an electrical connection. One of the compression molding procedures used to form such conventional compression molded lenses is available from TOWA Corporation of Kyoto, Japan.
半導體發光裝置之封裝可能因各種操作所需要的精度而令所得的封裝裝置之成本增加。該等成本一般會因需要具 有不同光性質之封裝發光裝置而增加。儘管已建議採用可能降低形成封裝發光裝置的成本之壓縮模製技術，但尚未完全實現此技術之優點。例如，此類技術一般僅係用於製造由一材料製成之簡單透鏡。The packaging of the semiconductor light emitting device may increase the cost of the resulting packaged device due to the precision required for various operations. These costs are generally due to the need Increased in packaged illuminators with different optical properties. Although compression molding techniques that may reduce the cost of forming packaged lighting devices have been proposed, the advantages of this technology have not been fully realized. For example, such techniques are generally only used to make simple lenses made from a single material.
本發明之一些具體實施例提供封裝半導體發光裝置的方法，包括提供在其一前部面上具有該半導體發光裝置之一基板。在該前部面上緊鄰該半導體發光裝置由一第一材料形成一第一光元件。在該半導體發光裝置及該第一光元件上由不同於該第一材料之一第二材料形成一第二光元件。該第一光元件及/或該第二光元件係藉由壓縮模製該個別光元件而形成。Some embodiments of the present invention provide a method of packaging a semiconductor light emitting device comprising providing a substrate having one of the semiconductor light emitting devices on a front side thereof. A first light element is formed from a first material adjacent to the semiconductor light emitting device on the front surface. A second optical element is formed on the semiconductor light emitting device and the first optical element by a second material different from the first material. The first optical element and/or the second optical element are formed by compression molding the individual optical elements.
在其他具體實施例中，壓縮模製該第一光元件與該第二光元件包括將該基板裝載於一自動化模製設備中，該模製設備包括經組態用以形成該第一光元件之一第一模穴與經組態用以形成該第二光元件之一第二模穴。將該基板移動至該第一模穴。在該第一模穴中將該第一光元件壓縮模製於該前部面上。將在其上面具有該第一光元件的基板移動至該第二模穴而不從該自動化模製設備移除該基板。在該第二光腔中壓縮模製該第二光元件。從該自動化模製設備移除具有該第一光元件及該第二光元件之基板。In other embodiments, compression molding the first optical component and the second optical component comprises loading the substrate in an automated molding apparatus, the molding apparatus comprising configured to form the first optical component One of the first cavity is configured to form a second cavity of the second optical component. The substrate is moved to the first cavity. The first optical element is compression molded on the front face in the first cavity. The substrate having the first light element thereon is moved to the second cavity without removing the substrate from the automated molding apparatus. The second optical element is compression molded in the second optical cavity. A substrate having the first optical element and the second optical element is removed from the automated molding apparatus.
在其他具體實施例中，該基板包括在其前部面上的複數個半導體發光裝置。壓縮模製該第一光元件及該第二光元件包括將複數個第一光元件及複數個第二光元件壓縮模製 於該基板之前部面上且在該等半導體發光裝置之對應裝置之上。該第一模穴與該第二模穴皆包括複數個透鏡狀的腔，該等腔係緊鄰該複數個半導體發光裝置之對應裝置而定位。In other embodiments, the substrate includes a plurality of semiconductor light emitting devices on a front surface thereof. Compression molding the first optical component and the second optical component comprises compression molding a plurality of first optical components and a plurality of second optical components On the front surface of the substrate and above the corresponding devices of the semiconductor light emitting devices. The first cavity and the second cavity each include a plurality of lenticular cavities positioned adjacent to corresponding devices of the plurality of semiconductor light emitting devices.
在其他具體實施例中，壓縮模製該第二光元件包括將該第二光元件壓縮模製於該半導體發光裝置及該第一光元件之上。該第一光元件與該第二光元件可具有經選擇成針對該封裝半導體發光裝置提供一所需光特性的不同折射率。該第一光元件及該第二光元件可經組態用以向該封裝半導體發光裝置提供一選定視角。第一材料可具有一黏合特性，該黏合特性經選擇成在壓縮模製期間促進該第一光元件與該基板的黏合及/或在該封裝半導體發光裝置之熱循環期間限制向該發光裝置及/或耦合至該發光裝置之一線接合施加的應力。該第一材料及/或第二材料可包括一磷光體，而該第一材料及/或該第二材料可以係聚矽氧。In other embodiments, compression molding the second optical component includes compression molding the second optical component onto the semiconductor light emitting device and the first optical component. The first optical component and the second optical component can have different refractive indices selected to provide a desired optical characteristic for the packaged semiconductor light emitting device. The first optical component and the second optical component can be configured to provide a selected viewing angle to the packaged semiconductor light emitting device. The first material can have an adhesive property selected to promote adhesion of the first optical component to the substrate during compression molding and/or to limit illumination to the illumination device during thermal cycling of the packaged semiconductor light emitting device / or coupled to one of the illuminators to wire the applied stress. The first material and/or the second material may comprise a phosphor, and the first material and/or the second material may be polyoxygenated.
在其他具體實施例中，提供該基板包括將該半導體發光裝置齊平地黏著於其前部面上而不使用一反射器腔。該第二光元件係模製於該基板之前部面之一包圍該半導體發光裝置的區域中並從該區域延伸以及延伸於該半導體發光裝置之上。In other embodiments, providing the substrate includes bonding the semiconductor light emitting device to its front surface flush without using a reflector cavity. The second optical component is molded in and extends from a region of the front surface of the substrate that surrounds the semiconductor light emitting device and extends over the semiconductor light emitting device.
在其他具體實施例中，形成該第一光元件包括藉由使用除壓縮模製以外之一程序來形成該第一光元件。除壓縮模製以外的程序可包括施配及/或接合。形成該第一光元件可包括將該第一光元件形成為緊鄰該半導體發光裝置但不 覆蓋該半導體發光裝置。該第二材料可具有與該第一材料不同之一折射率，而該第一光元件可以係成形為定義一腔，而該半導體發光裝置可以係定位於該腔內。該第二材料可具有一黏合特性，該黏合特性經選擇成在壓縮模製期間促進該第二光元件與該基板的黏合及/或可經選擇在該封裝半導體發光裝置之熱循環期間限制向該發光裝置及/或耦合至該發光裝置之一線接合施加的應力。In other embodiments, forming the first optical component includes forming the first optical component by using a program other than compression molding. Programs other than compression molding may include dispensing and/or bonding. Forming the first light element may include forming the first light element in close proximity to the semiconductor light emitting device but not The semiconductor light emitting device is covered. The second material can have a different refractive index than the first material, and the first optical element can be shaped to define a cavity, and the semiconductor light emitting device can be positioned within the cavity. The second material can have an adhesive property selected to promote adhesion of the second optical component to the substrate during compression molding and/or can be selectively limited during thermal cycling of the packaged semiconductor light emitting device The illumination device and/or a line coupled to the illumination device engages the applied stress.
在其他具體實施例中，該基板包括在其前部面上之一接點。壓縮模製該第二光元件包括壓縮模製該基板以形成在該基板的前部面上且在該半導體發光裝置之上的第二光元件以及在包括該接點的該基板之前部面之一區域上的一殘餘塗層。該方法進一步包括移除在該接點之上的殘餘塗層而不損壞該接點。In other embodiments, the substrate includes a contact on its front face. Compression molding the second optical component includes compression molding the substrate to form a second optical component on a front surface of the substrate and over the semiconductor light emitting device, and a front surface of the substrate including the contact A residual coating on a zone. The method further includes removing residual coating over the joint without damaging the joint.
在其他具體實施例中，該第一光元件或該第二光元件係壓縮模製於該半導體發光裝置以及將該半導體發光裝置耦合至該基板之一線接合上而直接接觸該線接合。該基板可以係一陶瓷基板、一金屬核心印刷電路板(MCPCB)、一撓性電路基板及/或一引線框架。該基板可包括在其前部面上的複數個半導體發光裝置，而形成該第一光元件及形成該第二光元件可包括在該基板之前部面上於該等半導體發光裝置之對應裝置上形成複數個第一光元件及形成複數個第二光元件。In other embodiments, the first or second optical component is compression molded to the semiconductor light emitting device and coupled to the wire bond of the substrate to directly contact the wire bond. The substrate can be a ceramic substrate, a metal core printed circuit board (MCPCB), a flexible circuit substrate, and/or a lead frame. The substrate may include a plurality of semiconductor light emitting devices on a front surface thereof, and forming the first light element and forming the second light element may be included on a front surface of the substrate on a corresponding device of the semiconductor light emitting devices A plurality of first optical elements are formed and a plurality of second optical elements are formed.
在其他具體實施例中，封裝半導體發光裝置包括一基板與一黏著於該基板之一前部面上的半導體發光裝置。一第 一光元件係在該基板之前部面上而緊鄰該半導體發光裝置。一第二光元件係在該基板之前部面上且在該半導體發光裝置及該第一光元件之上。該第一光元件及/或該第二光元件係壓縮模製的光元件。該半導體發光裝置可以係齊平地黏著於該基板之前部面上而不使用一反射器腔，而該第二光元件可以係模製於該基板之前部面之一包圍該半導體發光裝置的區域中並從該區域延伸以及延伸於該半導體發光裝置之上。該壓縮模製的光元件可以係聚矽氧透鏡。該半導體發光裝置可以係複數個半導體發光裝置，而該等壓縮模製的光元件可以係在該等半導體發光裝置之對應裝置之上的複數個壓縮模製的光元件。In other embodiments, the packaged semiconductor light emitting device includes a substrate and a semiconductor light emitting device adhered to a front surface of the substrate. One A light element is attached to the front side of the substrate in close proximity to the semiconductor light emitting device. A second optical component is on the front surface of the substrate and over the semiconductor light emitting device and the first optical component. The first optical element and/or the second optical element compresses the molded optical element. The semiconductor light emitting device may be flushly adhered to the front surface of the substrate without using a reflector cavity, and the second optical component may be molded in a region of the front surface of the substrate surrounding the semiconductor light emitting device. And extending from the region and extending over the semiconductor light emitting device. The compression molded optical component can be a polysiloxane lens. The semiconductor light emitting device can be a plurality of semiconductor light emitting devices, and the compression molded optical components can be coupled to a plurality of compression molded optical components over corresponding devices of the semiconductor light emitting devices.
在其他具體實施例中，在該基板之前部面上提供電耦合至該半導體發光裝置之一接點。該半導體發光裝置可以係複數個半導體發光裝置，而該接點可以係在該前部面上電耦合至該等半導體發光裝置之個別裝置的複數個接點，而該等壓縮模製的光元件可以係在該等半導體發光裝置之對應裝置之上的複數個壓縮模製的光元件。一線接合可將該半導體發光裝置電耦合至該基板之一接觸部分，而該等壓縮模製的光元件之至少一元件可以直接接觸該線接合。In other embodiments, a contact is provided on the front face of the substrate that is electrically coupled to the semiconductor light emitting device. The semiconductor light emitting device can be a plurality of semiconductor light emitting devices, and the contacts can be connected to a plurality of contacts of the individual devices of the semiconductor light emitting devices on the front surface, and the compression molded optical components A plurality of compression molded optical elements can be attached to corresponding devices of the semiconductor light emitting devices. A wire bond can electrically couple the semiconductor light emitting device to a contact portion of the substrate, and at least one of the compression molded light elements can directly contact the wire bond.
在其他具體實施例中，該第一光元件與該第二光元件可具有經選擇成針對該封裝半導體發光裝置提供一所需光特性的不同折射率。該第一及該第二光元件可經組態用以向該封裝半導體發光裝置提供一選定視角。該第一光元件可以係具有一黏合特性之一第一材料，該黏合特性經選擇成 在壓縮模製期間促進該第一光元件與該基板的黏合及/或在該封裝半導體發光裝置之熱循環期間限制向該發光裝置及/或耦合至該發光裝置之一線接合施加的應力。該第一光元件可以係一第一材料，而該第二光元件可以係一第二材料，而該第一材料及/或該第二材料可包括一磷光體，而該第一材料及/或該第二材料可以係聚矽氧。In other embodiments, the first optical component and the second optical component can have different refractive indices selected to provide a desired optical characteristic for the packaged semiconductor light emitting device. The first and second optical components can be configured to provide a selected viewing angle to the packaged semiconductor light emitting device. The first optical component may have a first material having a bonding property, and the bonding property is selected to be Adhesion of the first optical component to the substrate during compression molding and/or stress applied to the light-emitting device and/or to one of the light-emitting devices coupled to the light-emitting device during thermal cycling of the packaged semiconductor light-emitting device. The first light element may be a first material, and the second light element may be a second material, and the first material and/or the second material may comprise a phosphor, and the first material and/or Or the second material can be polyoxygenated.
下文將參考顯示本發明之具體實施例的附圖來更全面地說明本發明。然而，此發明可以用許多不同形式加以執行而應視為限於本文所提出的具體實施例。確切地說，所提供的該些具體實施例將使得此揭示內容更為詳盡及完整，並且讓熟習此項技術者完整地瞭解本發明之範疇。圖中，為了清楚起見，已經放大各層及各區域的尺寸及相對尺寸。The invention will be described more fully hereinafter with reference to the accompanying drawings, in which FIG. However, the invention may be embodied in many different forms and should be construed as limited to the specific embodiments set forth herein. Rather, these specific embodiments are provided so that this disclosure will be thorough and complete, and the scope of the invention is fully understood by those skilled in the art. In the figures, the dimensions and relative sizes of the various layers and the various regions have been exaggerated for clarity.
應瞭解當元件或層係表示為在另一元件或層"上"、"連接至"或"耦合至"另一元件或層時，其可以係直接在另一元件或層上、連接或耦合至另一元件或層，或者可以出現中間元件或層。相反地，當元件係表示為"直接在"另一元件或層"上"、"直接連接至"或"直接耦合至"另一元件或層時，不會出現中間元件或層。在所有圖式中，相同數字表示相同元件。本文所用的術語"及/或"包括相關聯列舉項目之一或多個項目的任何及所有組合。It is understood that when an element or layer is referred to as "on," "connected to" or "coupled to" another element or layer, it can be directly connected to another element or layer. To another element or layer, or an intermediate element or layer may be present. In contrast, when an element is referred to as "directly on," "directly connected to" or "directly connected to" or "directly coupled to" another element or layer, In all the figures, the same numerals indicate the same elements. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
應瞭解，雖然術語第一、第二等可在本文中用以說明各個元件、組件、區域、層及/或區段，但是此等術語不應 限制此等元件、組件、區域、層及/或區段。此等術語係僅用以將一元件、組件、區域、層或區段與另一區域、層或區段區分。因此，下面說明之一第一元件、組件、區域、層或區段可稱為一第二元件、組件、區域、層或區段，而不脫離本發明之教導內容。It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these terms should not Limit such elements, components, regions, layers, and/or sections. The terms are used to distinguish one element, component, region, layer, or section from another region, layer or section. Thus, a first element, component, region, layer or section may be referred to as a second element, component, region, layer or section without departing from the teachings of the invention.
本文可為便於說明而使用空間關係術語，例如"下方"、"下面"、"下部"、"上面"、"上部"及類似者，來說明如圖所示一元件或特徵與另一(另外多個)元件或特徵之關係。應瞭解，除圖式所描述的方位以外，該等空間關係術語之用意係涵蓋該裝置在使用或操作中之不同方位。例如，若顛倒該等圖式中的裝置，則說明為在其他元件或特徵"下面"或"下方"之元件便將係定向於該等其他元件或特徵之"上面"。因此，範例性術語"下面"可涵蓋上面與下面兩者之一方位。可以對該裝置作其他方式的定向(旋轉90度或採用其他方位)而本文所使用的空間關係描述符作相應的解釋。This document may be used for convenience of explanation, such as "lower", "lower", "lower", "above", "upper" and the like, to describe one element or feature as shown in the figure. Multiple) the relationship of components or features. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation. For example, elements in the "lower" or "lower" or "an" or "an" Thus, the exemplary term "lower" can encompass both an orientation of the above. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial relationship descriptors used herein interpreted accordingly.
本文所用的術語係僅基於說明特定具體實施例之目的，而不期望限制本發明。本文所用的單數形式"一"、"一個"及"該"之用意亦包含複數形式，除非內容清楚地指示其他情況。應進一步瞭解術語"包括"及/或"包含"在用於此說明書時規定所述特徵、整體、步驟、操作、元件及/或組件之存在，但是並不排除存在或增加一或多個其他特徵、整體、步驟、操作、元件、組件及/或其群組。The terminology used herein is for the purpose of describing particular embodiments only, and is not intended to limit the invention. The singular forms "a", "an" and "the" It should be further understood that the terms "comprising" and / or "comprising", "the" Features, integers, steps, operations, components, components, and/or groups thereof.
本文參考示意性解說本發明之理想具體實施例的斷面圖 來說明本發明之具體實施例。同樣地，可預期圖解的形狀因(例如)製造技術及/或公差而發生變化。因此本發明之具體實施例不應解釋為受限於本文所解說的特定區域形狀，而應包含(例如)因製造而產生的形狀偏差。例如，解說為矩形的蝕刻區域將通常具有圓形或彎曲特徵。因此，圖中解說的區域本質上為示意性，而且其形狀並無意於說明一裝置區域之精確形狀而且無意於限制本發明之範疇。BRIEF DESCRIPTION OF THE DRAWINGS Referring to the cross-sectional illustration of a preferred embodiment of the present invention Specific embodiments of the invention are described. Likewise, it is contemplated that the shapes of the illustrations may vary, for example, from manufacturing techniques and/or tolerances. Thus, the specific embodiments of the invention should not be construed as limited to the particular shapes of the particulars disclosed herein, but should include, for example, the resulting. For example, an etched area illustrated as a rectangle will typically have rounded or curved features. Therefore, the regions illustrated in the figures are illustrative in nature and their shapes are not intended to illustrate the precise shape of a device region and are not intended to limit the scope of the invention.
除非另外定義，否則本文所用的全部術語(包括技術及科學術語)具有與熟習此發明所屬技術者所共同瞭解者相同的含意。應進一步瞭解，術語(例如通用詞典所定義的術語)應視為具有與其在相關技術及此說明書之內容中的含意一致之含意，而且將不視為具有理想或過度正式的意義，除非本文如此清楚地定義。All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art. It should be further understood that terms (such as those defined by the general dictionary) should be considered to have the meanings that are consistent with their meaning in the relevant art and the content of this specification, and will not be considered to have an ideal or excessive formal meaning unless this is the case. Clearly defined.
現在將參考圖1至9來說明封裝半導體發光裝置之具體實施例及其形成方法。首先參考圖1，在俯視平面圖中示意性解說一封裝半導體發光裝置100。更特定言之，圖解之裝置100係顯示為包括一基板105，該基板105具有以陣列配置黏著於該基板105之一前部面107上的複數個半導體發光裝置108。一壓縮模製的光元件110(顯示為一透鏡)係形成於該基板105之前部面107上而在個別半導體發光裝置108之上。A specific embodiment of a packaged semiconductor light emitting device and a method of forming the same will now be described with reference to Figs. Referring first to Figure 1, a packaged semiconductor light emitting device 100 is schematically illustrated in a top plan view. More specifically, the illustrated device 100 is shown to include a substrate 105 having a plurality of semiconductor light emitting devices 108 adhered to one of the front faces 107 of the substrate 105 in an array configuration. A compression molded optical component 110 (shown as a lens) is formed on the front face 107 of the substrate 105 above the individual semiconductor light emitting device 108.
該(等)半導體發光裝置108可包含一發光二極體、雷射二極體及/或其他裝置，該等其他裝置可包括：一或多個半導體層(其可包含矽、碳化矽、氮化鎵及/或其他半導體 材料)、一可包含藍寶石、矽、碳化矽、氮化鎵的基板或其他微電子基板，以及可包含金屬之一或多個接觸層及/或其他導電層。半導體發光裝置之設計及製造為熟習此項技術者所熟知的技術。The semiconductor light emitting device 108 can include a light emitting diode, a laser diode, and/or other devices, and the other devices can include: one or more semiconductor layers (which can include germanium, tantalum carbide, nitrogen) Gallium and/or other semiconductors Material), a substrate or other microelectronic substrate that may comprise sapphire, tantalum, tantalum carbide, gallium nitride, and may comprise one or more contact layers and/or other conductive layers of the metal. The design and manufacture of semiconductor light emitting devices are well known to those skilled in the art.
舉例而言，該(等)發光裝置108可為基於氮化鎵之LED或在碳化矽基板上製造之雷射，例如北卡羅來納州達拉謨市Cree, Inc.所製造及銷售的此類裝置。例如，本發明可能適用於如以下美國專利案第6,201,262、6,187,606、6,120,600、5,912,477、5,739,554、5,631,190、5,604,135、5,523,589、5,416,342、5,393,993、5,338,944、5,210,051、5,027,168、5,027,168、4,966,862及/或4,918,497號中所述之LED及/或雷射，其揭示內容係以引用的方式併入於此，如同在本文完整說明。其他合適的LED及/或雷射在以下專利文獻中予以說明：已公佈之美國專利公告案第US 2003/0006418 A1號，標題為"具有一量子井及超晶格之基於III族氮化物的發光二極體結構，基於III族氮化物的量子井結構及基於III族氮化物的超晶格結構"，2003年1月9日公佈；以及已公佈之美國專利公告案第US 2002/0123164 A1號，標題為"包含用於光擷取之修改的發光二極體及其製造方法"。另外，本發明之具體實施例亦適合使用塗布磷光體之LED，例如標題為"包括錐形側壁之塗布磷光體的發光二極體，及其製造方法"，2004年3月25日公佈的美國專利申請案第US 2004/0056260 A1號所說明之LED，其揭示內容係以引用的方式併入於此，如同在本文完整說 明。For example, the (e) illuminator 108 can be a gallium nitride-based LED or a laser fabricated on a tantalum carbide substrate, such as those manufactured and sold by Cree, Inc. of Durham, North Carolina. . For example, the present invention may be applied as described in U.S. Patent Nos. 6,201,262, 6,187,606, 6,120,600, 5,912,477, 5,739,554, 5,631,190, 5,604,135, 5,523,589, 5,416,342, 5,393,993, 5,338,944, 5,210,051, 5,027,168, 5,027,168, 4,966,862 and/or 4,918,497. The LEDs and/or lasers are disclosed herein by reference, as fully described herein. Other suitable LEDs and/or lasers are described in the following patent documents: U.S. Patent Publication No. US 2003/0006418 A1, entitled "Class III nitride-based, with a quantum well and superlattice." Light-emitting diode structure, III-nitride-based quantum well structure and III-nitride-based superlattice structure", published on January 9, 2003; and published US Patent Publication No. US 2002/0123164 A1 No., entitled "Includes a light-emitting diode for modification of light extraction and a method of manufacturing the same". In addition, embodiments of the present invention are also suitable for use with LEDs coated with phosphors, such as "Light-emitting diodes coated with a phosphor comprising a tapered sidewall, and methods of making the same", USA, published March 25, 2004 The LEDs described in the patent application No. US 2004/0056260 A1, the disclosure of which is incorporated herein by reference, Bright.
在其他具體實施例中，可以將一滴在其中包含磷光體之一材料(例如環氧樹脂)放置於該半導體發光裝置上。例如在美國專利案第6,252,254;6,069,440;5,858,278;5,813,753;5,277,840及5,959,316號中說明使用磷光體塗層之LED。In other embodiments, a drop of material (e.g., epoxy) containing one of the phosphors can be placed on the semiconductor light emitting device. Phosphor coated LEDs are described in, for example, U.S. Patent Nos. 6,252,254; 6,069,440; 5,858,278; 5,813,753; 5,277,840 and 5,959,316.
還顯示在該基板105之前部面107上的複數個電接點115。例如，該等接點115可以係鍍金和電接觸墊，其將該等半導體發光裝置108連接至電路、電源及類似者。應瞭解，儘管本文僅說明在該前部面107上的接點，但在一些具體實施例中還可提供背部側接點。A plurality of electrical contacts 115 on the front face 107 of the substrate 105 are also shown. For example, the contacts 115 can be gold plated and electrical contact pads that connect the semiconductor light emitting devices 108 to circuitry, power supplies, and the like. It should be understood that although only the contacts on the front face 107 are illustrated herein, back side contacts may also be provided in some embodiments.
本文將進一步說明，在本發明之特定具體實施例中提供可藉以在該基板105之前部面107上形成一壓縮模製透鏡110而同時仍然使用前部面接點115並允許與該前部面107之電連接而不會因用於形成該等透鏡110的非導電材料之殘餘沉積而受到干擾的方法。此外，在本發明之一些具體實施例中用於形成該等透鏡110的殘餘聚矽氧可以保留於不需要電接觸的該前部面107之表面上。It will be further described herein that in a particular embodiment of the invention, a compression molded lens 110 can be formed on the front face 107 of the substrate 105 while still using the front face contact 115 and permitting the front face 107. The method of electrically connecting without being disturbed by residual deposition of the non-conductive material used to form the lenses 110. Moreover, the residual polyfluorene used to form the lenses 110 in some embodiments of the invention may remain on the surface of the front face 107 that does not require electrical contact.
應瞭解，圖1所示配置係基於範例性目的，而在本發明之各項具體實施例中可以在該封裝半導體發光裝置100中包括一或多個半導體發光裝置108與接點115之各種不同組態及組合，其中包括具有僅一單一發光裝置108之裝置。 同樣，應瞭解，在一些具體實施例中，可以將圖1所示結構100進一步處理成將其各部分分離成提供由圖解的裝置 100形成之複數個離散的封裝半導體發光裝置。It should be understood that the configuration shown in FIG. 1 is based on exemplary purposes, and that various embodiments of the semiconductor light emitting device 108 and the contacts 115 may be included in the packaged semiconductor light emitting device 100 in various embodiments of the present invention. Configurations and combinations include devices having only a single illumination device 108. Also, it should be appreciated that in some embodiments, the structure 100 of Figure 1 can be further processed to separate portions thereof into a device that provides the illustration. A plurality of discrete packaged semiconductor light emitting devices formed by 100.
依據該等具體實施例，該基板可包括嵌入的電連接以在電接點115之間形成一LED串或叢集以提供個別的前部側接點LED及/或LED串或叢集。此外，具有透鏡的個別LED皆可包括接點以啟用該等LED。In accordance with such embodiments, the substrate can include an embedded electrical connection to form an LED string or cluster between the electrical contacts 115 to provide individual front side contact LEDs and/or LED strings or clusters. In addition, individual LEDs with lenses can include contacts to enable the LEDs.
在本發明之一些具體實施例中，半導體發光裝置108可以係齊平地黏著於該基板105上之前部面107上而不使用如(例如)圖7所示包圍該等發光裝置108之一反射器腔。In some embodiments of the present invention, the semiconductor light emitting device 108 can be flushly bonded to the front surface 107 of the substrate 105 without using a reflector that surrounds one of the light emitting devices 108 as shown, for example, in FIG. Cavity.
現在將參考圖2之示意圖來說明依據其他具體實施例之一封裝半導體發光裝置200。如圖2之具體實施例中所示，該封裝半導體發光裝置200包括一基板205與齊平地黏著於基板205之一前部面207上的複數個發光裝置208。複數個電接點215係顯示為在該前部面207上緊鄰該等半導體發光裝置208。圖2還顯示覆蓋接點215的前部側之一遮罩230。如圖2所示，該遮罩230可能不完全覆蓋該等接點215之整個表面區域。The semiconductor light emitting device 200 will now be packaged in accordance with one of the other embodiments with reference to the schematic diagram of FIG. As shown in the specific embodiment of FIG. 2, the packaged semiconductor light emitting device 200 includes a substrate 205 and a plurality of light emitting devices 208 that are flushly bonded to a front surface 207 of the substrate 205. A plurality of electrical contacts 215 are shown in close proximity to the semiconductor light emitting devices 208 on the front face 207. FIG. 2 also shows one of the masks 230 on the front side of the cover 215. As shown in FIG. 2, the mask 230 may not completely cover the entire surface area of the contacts 215.
圖2將該等半導體發光裝置208示意性解說為具有一圓形形狀。但是，應瞭解，該等半導體發光裝置208之形狀可以改變而圓形表示係基於說明本發明之目的。此外，圖2未顯示該壓縮模製透鏡110之結構。該等前部側接點215相對於該等發光裝置208之特定配置及前部側接點215之數目係基於解說目的，而可依據本發明之一些具體實施例提供其他配置。2, the semiconductor light emitting devices 208 are schematically illustrated as having a circular shape. However, it should be understood that the shape of the semiconductor light emitting devices 208 can vary and the circular representation is based on the purpose of illustrating the invention. Further, the structure of the compression molded lens 110 is not shown in FIG. The particular configuration of the front side contacts 215 relative to the illumination devices 208 and the number of front side contacts 215 are based on illustrative purposes, and other configurations may be provided in accordance with some embodiments of the present invention.
現在將參考圖3至6之斷面圖及圖9之流程圖來說明依據 本發明之一些具體實施例形成一封裝半導體發光裝置的方法。圖3至6之斷面圖係沿圖2之線A-A所取。因此，應瞭解，正如圖2之說明，圖3至6中接點215及發光裝置208之特定配置係基於說明本發明之目的，而本發明的方法不限於圖中所示組件的特定結構或配置。The basis will now be explained with reference to the cross-sectional views of FIGS. 3 to 6 and the flowchart of FIG. Some embodiments of the present invention form a method of packaging a semiconductor light emitting device. 3 to 6 are taken along line A-A of Fig. 2. Accordingly, it should be understood that, as illustrated in FIG. 2, the particular configuration of contacts 215 and illumination device 208 of FIGS. 3-6 is based on the purpose of illustrating the invention, and that the method of the present invention is not limited to the particular structure of the components shown or Configuration.
將參考該等圖式來說明，本發明之一些具體實施例提供用以形成在一基板上具有模製壓縮透鏡及前部面電接點之封裝半導體發光裝置。該基板可以係(例如)一陶瓷基板、一金屬核心印刷電路板(MCPCB)、一撓性電路基板及/或一引線框架。對於圖3至6所示具體實施例，在模製之前將一遮罩或模板(例如一聚醯亞胺膜)施加於該基板上的接點。在將該等壓縮模製透鏡(例如聚矽氧透鏡或類似者)施加於該基板後，可以使用一熱網篩或其他移除方法來從受該遮罩或模板覆蓋的前部側接點移除該透鏡形成材料。但是，應瞭解，本發明之其他具體實施例提供包括壓縮模製透鏡的封裝半導體發光裝置之製造而不使用一遮罩或基板。而且，可以使用不同類型的遮罩並可以使用不同方法來移除殘餘的透鏡形成材料，例如雷射、鋸、熱刀片、熱導線柵格及/或導線網目。Referring to the drawings, some embodiments of the present invention provide a packaged semiconductor light emitting device having a molded compression lens and a front surface electrical contact formed on a substrate. The substrate can be, for example, a ceramic substrate, a metal core printed circuit board (MCPCB), a flexible circuit substrate, and/or a lead frame. For the specific embodiment illustrated in Figures 3 through 6, a mask or stencil (e.g., a polyimide film) is applied to the contacts on the substrate prior to molding. After the compression molded lenses (eg, polyoxyn lenses or the like) are applied to the substrate, a thermal mesh or other removal method can be used to remove the front side contacts that are covered by the mask or stencil. The lens forming material is removed. However, it should be understood that other embodiments of the present invention provide for the fabrication of packaged semiconductor light emitting devices including compression molded lenses without the use of a mask or substrate. Moreover, different types of masks can be used and different methods can be used to remove residual lens forming materials such as lasers, saws, hot blades, hot wire grids and/or wire mesh.
在圖3所示具體實施例中可看出，提供包括一基板205之一裝配件200，該基板在其一前部面207上具有半導體發光裝置208與前部側接點215。如上面所提到，在所示具體實施例中，還提供覆蓋該等前部側接點215之一遮罩230。圖3還示意性顯示一壓縮模具305。模具305係具有成形為透 鏡的凹痕或腔320。針對圖示複數個發光裝置208之每一個別裝置而提供一腔320。將聚矽氧315放置於該模具305上及該等凹痕320中。圖3還顯示，還可以在該聚矽氧315與該模具305之間使用一釋放層310。該釋放層310可促進在由該聚矽氧315壓縮模製透鏡後於該釋放層310移除該模具305。該釋放層310可以係(例如)可從Asahi玻璃公司購得之Aflex膜。從圖3可看出，圖示壓縮模製程序中的聚矽氧315填充該等腔320但進一步橫跨介於該等腔320之間及包圍該等腔320的區域而延伸，從而相應地在包括該接點215的該基板205之前部面之一區域之上產生一殘餘塗層在該基板205上之沉積。在本文所述的本發明之具體實施例中，聚矽氧315之此一額外覆蓋可能因用於形成該透鏡或光元件之壓縮模製程序之性質而發生。As can be seen in the particular embodiment illustrated in FIG. 3, a package 200 is provided that includes a substrate 205 having a semiconductor light emitting device 208 and a front side contact 215 on a front face 207 thereof. As mentioned above, in the particular embodiment shown, a mask 230 covering one of the front side contacts 215 is also provided. FIG. 3 also schematically shows a compression mold 305. Mold 305 has a shape to be transparent A dent or cavity 320 of the mirror. A cavity 320 is provided for each of the plurality of illumination devices 208. Polyoxyl 315 is placed on the mold 305 and in the indentations 320. Figure 3 also shows that a release layer 310 can also be used between the polyxylene 315 and the mold 305. The release layer 310 can facilitate removal of the mold 305 at the release layer 310 after compression molding the lens from the polyoxygen 315. The release layer 310 can be, for example, an Aflex film available from Asahi Glass Corporation. As can be seen from FIG. 3, the polyfluorinated oxygen 315 in the illustrated compression molding process fills the cavities 320 but extends further across the area between the cavities 320 and surrounding the cavities 320, thereby correspondingly A deposition of a residual coating on the substrate 205 is created over a region of the front face of the substrate 205 that includes the contact 215. In a particular embodiment of the invention described herein, this additional coverage of polyfluorene oxide 315 may occur due to the nature of the compression molding process used to form the lens or optical component.
現在參考圖4，顯示該裝配件200係在該基板205的壓縮模製期間***該模具305以在該基板之一前部面上於該等個別半導體發光裝置208之上形成光元件。在其他具體實施例中，用於形成該壓縮模製的光元件及殘餘塗層之材料係一聚矽氧塑膠，而該壓縮模製在約0.1至約0.6噸/英吋2 之一壓力下而在約100℃至約150℃(或者在一些具體實施例中係約140℃)之一溫度發生，歷時約三至約十分鐘(或者在一些具體實施例中係約五分鐘)。在本發明之一些具體實施例中用於形成封裝半導體發光裝置之一合適的聚矽氧材料之一範例係有機聚矽氧混合物。Referring now to Figure 4, the assembly 200 is shown inserted into the mold 305 during compression molding of the substrate 205 to form optical elements on the front surface of the substrate over the individual semiconductor light emitting devices 208. In other embodiments, the material used to form the compression molded optical component and residual coating is a polyoxyxide plastic, and the compression molding is at a pressure of from about 0.1 to about 0.6 ton / mile 2 It occurs at a temperature of from about 100 ° C to about 150 ° C (or about 140 ° C in some embodiments) for about three to about ten minutes (or about five minutes in some embodiments). One example of a suitable polyoxonium material for forming one of the encapsulated semiconductor light-emitting devices in some embodiments of the present invention is an organopolyoxane mixture.
如圖5所示，在壓縮模製後，於該釋放層310移除該模具 305。因此，該裝配件200除包括在該基板之前部面之一區域(包括該等接點215)上的一殘餘塗層525外還包括在該等發光裝置208的每一裝置上之一壓縮模製的光元件520。換言之，壓縮模製的聚矽氧層515在從該模具305移除之時包括該殘餘塗層525與該光元件520兩者，如圖5所示。As shown in FIG. 5, after the compression molding, the mold is removed from the release layer 310. 305. Accordingly, the assembly 200 includes a compression mold on each of the illumination devices 208 in addition to a residual coating 525 on one of the front faces of the substrate (including the contacts 215). Light element 520. In other words, the compression molded polysilicon layer 515 includes both the residual coating 525 and the optical element 520 upon removal from the mold 305, as shown in FIG.
圖5進一步解說使用一用於移除位於該遮罩230上的聚矽氧而同時將一模製透鏡留在每一發光裝置208上之移除方法或程序之使用。如圖5所特別顯示，該移除程序包括藉由一熱刀片530以一對應於該遮罩230的圖案或藉由具有對應於切割進該殘餘塗層525的圖案之一圖案的其他切割構件來切割該殘餘塗層525。在一些具體實施例中，該熱刀片530本身具有一對應圖案，從而允許藉由在圖5中的箭頭所示方向上之一單一運動來執行切割操作而無需在一第二方向上運動。在本發明之某些其他具體實施例中，該切割設備530可進一步進行一第二或第三方向移動以便能按需要將該殘餘塗層525切割成曝露該等接點215之一電接觸部分而不損壞該等接點215。Figure 5 further illustrates the use of a removal method or procedure for removing a polysilicon oxide located on the mask 230 while leaving a molded lens on each of the illumination devices 208. As specifically shown in FIG. 5, the removal procedure includes a pattern corresponding to the mask 230 by a hot blade 530 or by other cutting members having a pattern corresponding to one of the patterns cut into the residual coating 525. The residual coating 525 is cut. In some embodiments, the thermal blade 530 itself has a corresponding pattern to allow the cutting operation to be performed by a single movement in the direction indicated by the arrow in Figure 5 without moving in a second direction. In some other embodiments of the present invention, the cutting device 530 can further perform a second or third direction of movement to enable the residual coating 525 to be cut as needed to expose an electrical contact portion of the contacts 215. The contacts 215 are not damaged.
圖6解說依據本發明之一些具體實施例在圖5所示移除操作後所得的封裝半導體發光裝置結構。從圖6可看出，該基板205包括複數個發光裝置208，該複數個發光裝置208具有在該等發光裝置208的對應裝置上形成之壓縮模製透鏡620。已移除在該基板205之前部面之一區域(包括該等接點215之一接觸區域)之上的殘餘塗層525而不損壞該等接點215以允許形成與該等接點215之電連接。6 illustrates a packaged semiconductor light emitting device structure obtained after the removal operation of FIG. 5 in accordance with some embodiments of the present invention. As can be seen from FIG. 6, the substrate 205 includes a plurality of illumination devices 208 having compression molded lenses 620 formed on corresponding devices of the illumination devices 208. The residual coating 525 over a region of the front face of the substrate 205 (including one of the contacts 215) has been removed without damaging the contacts 215 to allow formation of the contacts 215 Electrical connection.
現在將參考圖9之流程圖來說明依據本發明之其他具體實施例用以形成一半導體發光裝置的操作。如圖9所示具體實施例中所示，在步驟900中藉由提供在其一前部面107、207上具有接點115、215之一基板105、205來開始操作(步驟900)。將一半導體發光裝置108、208黏著於該基板105、205之前部面107、207上(步驟905)。將該發光裝置108、208電連接至該等接點115、215之一或多個接點(步驟905)。因此，該等接點115、215可提供用以藉由在該基板105、205之前部面107、207上形成一電連接而將該發光裝置108、208與其他電路電連接之構件。可以藉由附著一將一個別發光裝置108、208電連接至該基板105、205之一接觸部分(即，該接觸部分可以係該等前部側接點115、215之一接點)的線接合來形成一額外連接或在步驟905中提到的連接(步驟910)。An operation for forming a semiconductor light emitting device in accordance with other embodiments of the present invention will now be described with reference to the flow chart of FIG. As shown in the particular embodiment of FIG. 9, operation begins in step 900 by providing a substrate 105, 205 having contacts 115, 215 on a front face 107, 207 thereof (step 900). A semiconductor light emitting device 108, 208 is adhered to the front faces 107, 207 of the substrates 105, 205 (step 905). The illumination devices 108, 208 are electrically coupled to one or more of the contacts 115, 215 (step 905). Accordingly, the contacts 115, 215 can provide means for electrically connecting the light emitting devices 108, 208 to other circuits by forming an electrical connection on the front faces 107, 207 of the substrates 105, 205. A line that electrically connects one of the illumination devices 108, 208 to one of the substrate 105, 205 (i.e., the contact portion can be a contact of one of the front side contacts 115, 215) by attaching Engage to form an additional connection or connection as mentioned in step 905 (step 910).
在各項具體實施例中，該基板105、205可以係一陶瓷基板、一金屬核心印刷電路板(MCPCB)、一撓性電路基板及/或一引線框架或類似物。此外，在本發明之不同具體實施例中可以採取各種個別配置將一或多個發光裝置108、208及前部側接點115、215提供於該基板105、205上。在本發明之各項具體實施例中可以依據適合對應於發光裝置及前部側接點的選定幾何結構或配置之一圖案來按需要提供殘餘塗層從該等接點之移除。In various embodiments, the substrate 105, 205 can be a ceramic substrate, a metal core printed circuit board (MCPCB), a flexible circuit substrate, and/or a lead frame or the like. In addition, one or more illumination devices 108, 208 and front side contacts 115, 215 may be provided on the substrate 105, 205 in various embodiments in various embodiments of the present invention. Removal of the residual coating from the contacts may be provided as needed in various embodiments of the invention in accordance with a pattern of selected geometries or configurations suitable for the illumination device and the front side contacts.
如圖9所示，提供覆蓋該等前部側接點115、215之一遮罩230(步驟915)。該基板可以係(例如)一聚醯亞胺膜。該 基板經壓縮模製用以形成在該基板107、207之前部面上且在該等半導體發光裝置108、208之個別裝置之上的一光元件110、620以及在包括該等接點的該基板之前部面之一區域上的一殘餘塗層，現在將參考步驟920至940來說明。As shown in Figure 9, one of the masks 230 covering the front side contacts 115, 215 is provided (step 915). The substrate can be, for example, a polyimide film. The The substrate is compression molded to form an optical component 110, 620 on the front surface of the substrate 107, 207 and over the individual devices of the semiconductor light emitting devices 108, 208, and the substrate including the contacts A residual coating on one of the front faces will now be described with reference to steps 920 through 940.
在圖9所示具體實施例中可看出，壓縮模製包括在包括複數個透鏡狀的腔320(其係緊鄰該複數個半導體發光裝置108、208之對應裝置而定位)之該模具305之一表面上提供一釋放層310(步驟920)。該基板係放置於具有該等腔之模具305中，該等腔係緊鄰該等半導體發光裝實之對應裝置而定位(步驟925)。在該模具305及該等腔320與介於該等腔320之間及包圍該等腔320之一區域中提供聚矽氧層315(步驟930)。由該等腔中的聚矽氧來壓縮模製透鏡620、110(步驟935)。從該模具移除該基板(其中形成一透鏡)(步驟940)。As can be seen in the particular embodiment illustrated in FIG. 9, compression molding includes the mold 305 including a plurality of lenticular cavities 320 positioned adjacent to corresponding devices of the plurality of semiconductor light emitting devices 108, 208. A release layer 310 is provided on a surface (step 920). The substrate is placed in a mold 305 having the cavities that are positioned in close proximity to the corresponding devices of the semiconductor light-emitting devices (step 925). A polysilicon layer 315 is provided in the mold 305 and the chambers 320 and in an area between the chambers 320 and surrounding the chambers 320 (step 930). The molded lenses 620, 110 are compressed by the polysilicon in the cavities (step 935). The substrate is removed from the mold (where a lens is formed) (step 940).
現在將參考圖9所示步驟945及950而針對本發明之一些具體實施例來說明與移除該等接點上的殘餘塗層而不損壞該等接點相關之操作。以對應於如上所述在步驟915中施加的遮罩之一圖案切割該殘餘塗層(步驟945)。在該基板包括在該前部面上的複數個發光裝置及接點之一些具體實施例中，切割該殘餘塗層包括藉由一熱刀片來切割該殘餘塗層。該熱刀片可具有對應於在該殘餘塗層中切割的圖案之一圖案，從而可以藉由該切割刀片朝該基板的前進來提供該切割操作而不必橫跨該基板來橫向移動切割部件。因此，可以減小在該移除程序期間對接觸表面造成任何損壞 之風險。移除覆蓋該接觸表面上的殘餘塗層之遮罩及切口以曝露該等前部側接點(步驟950)。The operations associated with removing residual coatings on the contacts without damaging the contacts will now be described with respect to portions 945 and 950 of FIG. 9 for some embodiments of the present invention. The residual coating is cut in a pattern corresponding to one of the masks applied in step 915 as described above (step 945). In some embodiments in which the substrate comprises a plurality of illumination devices and contacts on the front face, cutting the residual coating comprises cutting the residual coating by a thermal blade. The hot blade can have a pattern corresponding to one of the patterns cut in the residual coating such that the cutting operation can be provided by advancement of the cutting blade toward the substrate without having to laterally move the cutting member across the substrate. Therefore, it is possible to reduce any damage to the contact surface during the removal process. Risk. A mask and a slit covering the residual coating on the contact surface are removed to expose the front side contacts (step 950).
在本發明之一些具體實施例中，在壓縮模製該光元件110、620前藉由一線接合將該發光裝置108、208電連接至一接觸部分。此外，在一些具體實施例中，該基板經壓縮模製用以形成在該半導體發光裝置108、208之上且直接接觸該線接合的光元件110、620。本文所述之一壓縮模製程序可允許該光元件在該線接合及相關聯的發光裝置兩者上之此類直接接觸及形成而同時減小甚或防止藉由線接合對該發光裝置與該接觸部分之間的耦合造成的損壞。相反地，形成此一配置之一透鏡的各種其他方法可需要使用額外的保護性施塗以便避免損壞該線接合與該發光裝置及一基板的對應接觸部分之間的連接。In some embodiments of the invention, the illumination devices 108, 208 are electrically coupled to a contact portion by a wire bond prior to compression molding the optical component 110, 620. Moreover, in some embodiments, the substrate is compression molded to form over the semiconductor light emitting devices 108, 208 and directly contact the line bonded optical elements 110, 620. One of the compression molding procedures described herein may allow such direct contact and formation of the optical component on both the wire bond and the associated illumination device while simultaneously reducing or even preventing the illumination device from being bonded by wire bonding. Damage caused by coupling between the contact parts. Conversely, various other methods of forming one of the lenses of this configuration may require the use of additional protective applications to avoid damaging the connection between the wire bond and the corresponding contact portion of the light emitting device and a substrate.
此外，在本文所述的本發明之一些具體實施例中，可以將該發光裝置齊平地黏著於該基板之前部面上並可以圍繞該發光裝置以一在該發光裝置上延伸完整的180度之圓頂來形成一壓縮模製的光元件。因此，與需要使用包圍該發光裝置之一反射材料之一腔的方法相比，可以透過選擇該透鏡形成材料及向其添加的任何添加劑或類似物來提供從該發光裝置擷取及提供光時之一更大的靈活性及/或效率。此類反射腔一般吸收至少一定數量的所發射光，而從該前部面延伸成完全包圍該發光裝置(其係齊平地黏著於該基板的前部面上)之一透鏡或其他光元件可以在各種應用中提供改良的光擷取。但是，在一些具體實施例中，該 LED可能駐留於一腔或凹陷中。Moreover, in some embodiments of the invention described herein, the illumination device can be flushly bonded to the front surface of the substrate and can extend around the illumination device to a full 180 degrees on the illumination device. The dome forms a compression molded optical component. Therefore, it is possible to provide for the extraction and supply of light from the illuminating device by selecting the lens forming material and any additives or the like added thereto, as compared with a method of using a cavity surrounding one of the reflective materials of the illuminating device. One of greater flexibility and / or efficiency. Such a reflective cavity generally absorbs at least a certain amount of emitted light, and a lens or other optical component extending from the front face to completely surround the light emitting device (which is flushly bonded to the front face of the substrate) Improved light extraction is provided in a variety of applications. However, in some embodiments, the The LED may reside in a cavity or recess.
儘管已參考圖3至6及9來說明使用一遮罩的本發明之具體實施例，但應瞭解本發明之一些具體實施例不使用此一遮罩及切割程序。在本發明之一些具體實施例中，該基板係一撓性電路基板而藉由對該基板進行一濕式溶劑化學清潔以移除該等接點之上的殘餘塗層來移除該殘餘塗層。應瞭解，無論是否使用一遮罩或濕式蝕刻方法，皆可在包括該複數個接點的該基板之前部面之一區域上移除該殘餘塗層而無需完全曝露該等接點。但是，應曝露該等接點之一足夠大的區域以允許與其形成一電連接而殘餘塗層不會干擾該電連接。與壓縮模製之前相比，可以結合該濕式溶劑化學清潔操作而使用在形成該殘餘塗層後提供之一遮蔽方法，以便限制以一選定圖案從所需區域移除殘餘塗層。Although a specific embodiment of the present invention using a mask has been described with reference to Figures 3 through 6 and 9, it will be appreciated that some embodiments of the present invention do not use such a mask and cutting procedure. In some embodiments of the invention, the substrate is a flexible circuit substrate and the residual coating is removed by performing a wet solvent chemical cleaning of the substrate to remove residual coating over the contacts. Floor. It will be appreciated that whether or not a mask or wet etch process is used, the residual coating can be removed over a portion of the front face of the substrate including the plurality of contacts without completely exposing the contacts. However, one of the contacts should be exposed to a sufficiently large area to allow an electrical connection therewith without the residual coating interfering with the electrical connection. A masking method may be provided in conjunction with the wet solvent chemical cleaning operation in conjunction with the wet solvent chemical cleaning operation to form a residual coating from a desired area in a selected pattern.
現在將參考圖7及8之具體實施例來說明依據本發明之其他具體實施例之封裝半導體發光裝置。每一裝置皆包括形成於一基板上之複數個(圖示為第一及第二)光元件。應瞭解，在本發明之不同具體實施例中可以藉由使用壓縮模製來形成該等個別光元件之一及/或兩者。A packaged semiconductor light emitting device in accordance with other embodiments of the present invention will now be described with reference to the specific embodiments of FIGS. 7 and 8. Each device includes a plurality of (first and second illustrated) optical elements formed on a substrate. It will be appreciated that one or both of the individual light elements can be formed by compression molding in various embodiments of the invention.
在圖7之具體實施例中可看出，一封裝半導體發光裝置700包括齊平地黏著於一基板705之一前部面707上的複數個半導體發光裝置708。一第一光元件740係形成於該等半導體發光裝置708之每一裝置之上。在該第一光元件740及該發光裝置708之上形成一第二光元件720。如圖7之具體實施例中進一步顯示，可以向該第二光元件720添加一添 加劑742以實現該半導體發光裝置708之光透射或發射特性。應瞭解，可以替代地向該第一光元件740添加該添加劑742，或可以在該等光元件720、740之每一元件中提供一相同及/或不同的添加劑。此外，可以藉由針對該等個別光元件720、740選擇不同特性，例如針對該等個別材料選擇一不同的折射率以在從該半導體發光裝置708發射的光通過時提供一所需效果，來進一步訂製光性質。用於實現光性質之添加劑可包括一磷光體、一散射劑、一發光材料及/或實現所發射光的光特性之其他材料。As can be seen in the embodiment of FIG. 7, a packaged semiconductor light emitting device 700 includes a plurality of semiconductor light emitting devices 708 that are flushly bonded to a front surface 707 of a substrate 705. A first optical component 740 is formed over each of the semiconductor light emitting devices 708. A second optical element 720 is formed on the first optical element 740 and the light emitting device 708. As further shown in the specific embodiment of FIG. 7, an addition may be added to the second optical component 720. Additive 742 is used to achieve light transmission or emission characteristics of the semiconductor light emitting device 708. It will be appreciated that the additive 742 may alternatively be added to the first optical element 740, or an identical and/or different additive may be provided in each of the optical elements 720, 740. Moreover, different characteristics can be selected for the individual optical elements 720, 740, such as selecting a different index of refraction for the individual materials to provide a desired effect when light emitted from the semiconductor light emitting device 708 passes. Further customize the light properties. Additives for achieving optical properties may include a phosphor, a scattering agent, a luminescent material, and/or other materials that effect the optical properties of the emitted light.
應瞭解，在圖7之具體實施例中可以對該等第一與第二光元件皆進行壓縮模製。但是，在其他具體實施例中，可以藉由其他構件來形成該第一光元件740而藉由一般如上面參考圖3至6及圖8所述之壓縮模製來形成該第二光元件720。It should be understood that in the specific embodiment of FIG. 7, the first and second optical components can be compression molded. However, in other embodiments, the first optical component 740 can be formed by other components and the second optical component 720 can be formed by compression molding as generally described above with reference to Figures 3-6 and 8. .
圖8解說一封裝半導體發光裝置800之其他具體實施例。在圖8之具體實施例可看出，將一半導體發光裝置808齊平地黏著於一基板805之一前部面上。顯示一線接合809形成該基板805與該半導體發光裝置808之間的一連接。儘管圖8未顯示，但應瞭解可以在該發光裝置808與該基板805的前部面之間的介面處形成一第二連接。FIG. 8 illustrates other specific embodiments of a packaged semiconductor light emitting device 800. As can be seen in the embodiment of FIG. 8, a semiconductor light emitting device 808 is flush bonded to a front surface of a substrate 805. A line bond 809 is shown to form a connection between the substrate 805 and the semiconductor light emitting device 808. Although not shown in FIG. 8, it will be appreciated that a second connection can be formed at the interface between the illumination device 808 and the front face of the substrate 805.
在該基板805的前部面上緊鄰一發光裝置808而形成一第一光元件840。在該發光裝置808、線接合809及該第一光元件840上形成一第二光元件820。如參考圖7所述，可以藉由一般如前文所述之壓縮模製來形成該等個別光元件 840、820之一或兩個元件。此外，該第一光元件840儘管在圖8之斷面圖中呈現為兩個離散元件，但可以係圍繞該發光裝置808及線接合809而延伸之一環形的單一光元件。A first light element 840 is formed adjacent to a light emitting device 808 on the front surface of the substrate 805. A second optical element 820 is formed on the light emitting device 808, the wire bond 809, and the first light element 840. As described with reference to Figure 7, the individual optical components can be formed by compression molding as generally described above. One or two components of 840, 820. Moreover, the first optical component 840, although presented as two discrete components in the cross-sectional view of FIG. 8, may extend around the illuminating device 808 and the wire bond 809 to form a single annular optical element.
現在將參考圖10之流程圖來說明用以形成一封裝半導體發光裝置的方法之其他具體實施例。更特定言之，參考圖10所述的方法可用於形成圖7或圖8所示裝置。基於圖10之繪示目的，將說明其中將該等光元件皆壓縮模製於一自動化模製設備中之具體實施例。但是，應瞭解本發明不限於此類具體實施例。此外，應瞭解，在一些具體實施例中可以結合在其一前部面上具有接點之基板以及為曝露該等前部面接點而對該模製材料之一殘餘部分所作之移除，來使用參考壓縮模製所述之操作。Other embodiments of a method for forming a packaged semiconductor light emitting device will now be described with reference to the flow chart of FIG. More specifically, the method described with reference to Figure 10 can be used to form the apparatus of Figure 7 or Figure 8. Based on the purpose of FIG. 10, a specific embodiment in which the optical elements are compression molded in an automated molding apparatus will be described. However, it should be understood that the invention is not limited to such specific embodiments. In addition, it should be understood that in some embodiments, a substrate having contacts on a front face thereof and a removal of a residual portion of the molding material for exposing the front face contacts may be combined. The described operation is molded using reference compression.
對於圖10所示之具體實施例，藉由提供在其一前部面上具有一半導體發光裝置之一基板來開始操作(步驟1000)。如前面所述，該基板可包括在其前部面上的複數個半導體發光裝置，例如圖1及2所示。此外，可以將該等半導體發光裝置齊平地黏著於該基板之前部面上而不使用一反射器腔。該基板可以係(例如)一陶瓷基板，一MCPCB、一撓性電路基板及/或一引線框架。但是，可以將該等發光裝置黏著於一反射器腔或類似物中。For the embodiment shown in Figure 10, operation is initiated by providing a substrate having a semiconductor light emitting device on a front side thereof (step 1000). As previously described, the substrate can include a plurality of semiconductor light emitting devices on its front side, such as shown in Figures 1 and 2. In addition, the semiconductor light emitting devices can be flush bonded to the front surface of the substrate without the use of a reflector cavity. The substrate can be, for example, a ceramic substrate, an MCPCB, a flexible circuit substrate, and/or a lead frame. However, the illuminating means can be adhered to a reflector chamber or the like.
現在將參考步驟1005至1030來說明與形成該封裝半導體發光裝置的第一光元件及第二光元件相關之操作。將該基板裝載於一自動化模製設備中，該設備包括經組態用以形成該第一光元件之一第一模穴與經組態用以形成該第二光 元件之一第二模穴(步驟1005)。該等第一及第二模穴皆可包括複數個透鏡狀的腔，該等腔係緊鄰該複數個半導體發光裝置之對應裝置而定位，其中該基板包括在其上面的複數個半導體發光裝置。將該基板移動至該第一模穴(步驟1010)。該移動可能係藉由在該自動化模製設備內之自動化輸送器、機械臂及/或類似物。The operations associated with forming the first and second optical components of the packaged semiconductor light emitting device will now be described with reference to steps 1005 through 1030. Loading the substrate in an automated molding apparatus, the apparatus including a first cavity configured to form one of the first optical components and configured to form the second light One of the components is a second cavity (step 1005). The first and second mold cavities may each include a plurality of lenticular cavities positioned adjacent to corresponding devices of the plurality of semiconductor light emitting devices, wherein the substrate includes a plurality of semiconductor light emitting devices thereon. The substrate is moved to the first cavity (step 1010). This movement may be by automated conveyors, robotic arms and/or the like within the automated molding apparatus.
在該第一模穴中將該第一光元件壓縮模製於該基板之前部面上(步驟1015)。應瞭解，儘管係顯示為在步驟1015中的壓縮模製，但可以藉由使用除壓縮模製(例如施配及/或接合)以外之一程序來形成該第一光元件或該第二光元件。此外，可以在步驟1015中將該第一光元件形成為緊鄰該半導體發光裝置但並不覆蓋該半導體發光裝置，例如，圖8中的光元件840所示。在一些具體實施例中還可以在步驟1015中將該第一光元件形成為模製於該基板之前部面之一包圍該半導體發光裝置的區域中並從該區域延伸以及延伸於該半導體發光裝置之上，如針對圖7之具體實施例中的第一光元件740所示。在該第一光元件不在該發光裝置之上延伸的一些具體實施例中，該第一光元件可以係成形為定義一腔而該半導體發光裝置係定位於該腔內。The first optical element is compression molded on the front surface of the substrate in the first cavity (step 1015). It should be understood that although shown as compression molding in step 1015, the first optical element or the second light may be formed by using a program other than compression molding (eg, dispensing and/or bonding). element. Moreover, the first optical component can be formed in close proximity to the semiconductor light emitting device but not the semiconductor light emitting device in step 1015, such as shown by optical component 840 in FIG. In some embodiments, the first optical component may also be formed in step 1015 to be molded in and extend from a region of the front surface of the substrate surrounding the semiconductor light emitting device and extend from the semiconductor light emitting device. Above, as shown for the first optical component 740 in the particular embodiment of FIG. In some embodiments in which the first optical element does not extend over the illumination device, the first optical component can be shaped to define a cavity and the semiconductor illumination device is positioned within the cavity.
將在其上面具有該第一光元件的基板移動至該第二模穴而無需從該自動化模製設備移除該基板(步驟1020)。例如，還可將一輸送器或機械工具(例如參考步驟1010中的操作所述)用於步驟1020中的操作。The substrate having the first optical element thereon is moved to the second cavity without removing the substrate from the automated molding apparatus (step 1020). For example, a conveyor or machine tool (e.g., as described with reference to operation in step 1010) can also be used for the operation in step 1020.
在該第二光腔中壓縮模製該第二光元件(步驟1025)。如 同參考圖8所示第一光元件所說明，可以將該第二光元件模製成從該基板之前部之一包圍該半導體發光裝置的區域延伸並延伸於該發光裝置之上，如圖7之第二光元件720及圖8之第二光元件820所示。從該自動化模製設備移除在其上面具有該第一光元件及該第二光元件之基板(步驟1030)。The second optical component is compression molded in the second optical cavity (step 1025). Such as As described with reference to the first optical component shown in FIG. 8, the second optical component can be molded to extend from a region of the front portion of the substrate surrounding the semiconductor light emitting device and extend over the light emitting device, as shown in FIG. The second optical element 720 and the second optical element 820 of FIG. 8 are shown. A substrate having the first light element and the second light element thereon is removed from the automated molding apparatus (step 1030).
圖7及圖8兩者亦顯示，可以將該第二光元件壓縮模製於該半導體發光裝置及該第一光元件兩者之上。該第一光元件與該第二光元件可具有經選擇成針對該封裝半導體發光裝置提供一所需光特性的不同折射率。該第一光元件及該第二光元件可經組態用以向該封裝半導體發光裝置提供一選定視角。在一些具體實施例中，用於形成該第一及/或第二光元件之材料具有一黏合特性，該黏合特性經選擇成在該壓縮模製期間促進將該第一光元件黏合於該基板及/或在該封裝半導體發光裝置之熱循環期間限制向該發光裝置及/或耦合至該發光裝置之一線接合施加的應力。該第一光元件材料及/或該第二光元件材料可包括一磷光體。該第一材料及/或該第二材料可以係聚矽氧、環氧樹脂、一混合聚矽氧/環氧樹脂材料及/或類似材料。Both of Figures 7 and 8 also show that the second optical component can be compression molded over both the semiconductor light emitting device and the first optical component. The first optical component and the second optical component can have different refractive indices selected to provide a desired optical characteristic for the packaged semiconductor light emitting device. The first optical component and the second optical component can be configured to provide a selected viewing angle to the packaged semiconductor light emitting device. In some embodiments, the material used to form the first and/or second optical component has an adhesive property selected to facilitate bonding the first optical component to the substrate during the compression molding. And/or limiting the stress applied to the light emitting device and/or to one of the wire bonds coupled to the light emitting device during thermal cycling of the packaged semiconductor light emitting device. The first optical element material and/or the second optical element material may comprise a phosphor. The first material and/or the second material may be a polyoxygen oxide, an epoxy resin, a mixed polyoxyl/epoxy material, and/or the like.
如上所述，本發明之一些具體實施例提供封裝半導體發光裝置及藉由使用壓縮模製以製造具有訂製光性質的透鏡來形成該等封裝半導體發光裝置的方法。例如，可以提供經封裝成具有藉由使用壓縮模製製造的複合透鏡之發光裝置。在一些具體實施例中，可以使用多個壓縮模具來製造 壓縮模製透鏡，其中第一與第二光元件經壓縮模製用以製造具有所需光性質(例如視角)之透鏡。在其他具體實施例中，可以分散、接合一第一光元件或對其作類似處理，而可以壓縮模製該第二光元件。因此，該第一光元件及該第二光元件可具有訂製成適應該封裝裝置的應用需要之不同性質(形狀、成分、折射率及類似者)。一些具體實施例除包括該第一光元件及該第二光元件外還可包括額外的光元件、層及/或壓縮模具。此外，每一光元件之形狀及成分可互不相同並可以係訂製成提供一所需要的燈效能。在本發明之各項具體實施例中可以提供改良的黏合及/或在各相適部分上更低的應力。As described above, some embodiments of the present invention provide a method of packaging a semiconductor light emitting device and forming the packaged semiconductor light emitting device by using compression molding to fabricate a lens having a custom light property. For example, a light-emitting device packaged to have a composite lens manufactured by using compression molding can be provided. In some embodiments, multiple compression dies can be used to make A compression molded lens wherein the first and second optical elements are compression molded to produce a lens having a desired optical property, such as a viewing angle. In other embodiments, a first optical component can be dispersed, bonded, or otherwise processed, and the second optical component can be compression molded. Thus, the first optical component and the second optical component can have different properties (shape, composition, refractive index, and the like) that are tailored to the needs of the application of the packaged device. Some embodiments may include additional optical components, layers, and/or compression dies in addition to the first optical component and the second optical component. In addition, the shape and composition of each of the optical components can be different from each other and can be customized to provide a desired lamp performance. Improved adhesion and/or lower stress on each suitable portion can be provided in various embodiments of the invention.
在圖式與說明書中，已揭示本發明之具體實施例，且雖然使用特定術語，但是該等術語僅以一般及說明意義加以使用，而非基於限制之目的，本發明之範疇係在以下申請專利範圍中提出。The specific embodiments of the present invention have been disclosed in the drawings and the specification, and, although the specific terms are used, the terms are used in a general and descriptive sense, and not for the purpose of limitation. Proposed in the scope of patents.
100‧‧‧封裝半導體發光裝置100‧‧‧Package semiconductor light-emitting device
105‧‧‧基板105‧‧‧Substrate
107‧‧‧基板105之一前部面107‧‧‧One front surface of the substrate 105
108‧‧‧半導體發光裝置108‧‧‧Semiconductor lighting device
110‧‧‧光元件/透鏡110‧‧‧Light components/lenses
115‧‧‧電接點115‧‧‧Electrical contacts
200‧‧‧封裝半導體發光裝置/裝配件200‧‧‧Package semiconductor light-emitting devices/assembly
205‧‧‧基板205‧‧‧Substrate
207‧‧‧基板205之一前部面207‧‧‧One front surface of the substrate 205
208‧‧‧發光裝置208‧‧‧Lighting device
215‧‧‧電接點215‧‧‧Electrical contacts
230‧‧‧遮罩230‧‧‧ mask
305‧‧‧壓縮模具305‧‧‧Compression mould
310‧‧‧釋放層310‧‧‧ release layer
315‧‧‧聚矽氧(層)315‧‧‧Polyoxygen (layer)
320‧‧‧凹痕或腔320‧‧‧Dent or cavity
515‧‧‧聚矽氧層515‧‧‧Polyoxygen layer
520‧‧‧光元件520‧‧‧Light components
525‧‧‧殘餘塗層525‧‧‧Residual coating
530‧‧‧熱刀片/切割設備530‧‧‧Hot blade/cutting equipment
620‧‧‧透鏡/光元件620‧‧‧Lens/optical components
700‧‧‧封裝半導體發光裝置700‧‧‧Package semiconductor light-emitting device
705‧‧‧基板705‧‧‧Substrate
707‧‧‧基板705之一前部面707‧‧‧One front surface of the substrate 705
708‧‧‧半導體發光裝置708‧‧‧Semiconductor lighting device
720‧‧‧第二光元件720‧‧‧second optical component
740‧‧‧第一光元件740‧‧‧First optical component
742‧‧‧添加劑742‧‧‧Additives
800‧‧‧封裝半導體發光裝置800‧‧‧Package semiconductor light-emitting device
805‧‧‧基板805‧‧‧Substrate
808‧‧‧半導體發光裝置808‧‧‧Semiconductor lighting device
809‧‧‧線接合809‧‧‧ wire bonding
820‧‧‧第二光元件820‧‧‧second optical component
840‧‧‧第一光元件840‧‧‧First optical component
圖1係依據本發明之一些具體實施例之一封裝半導體發光裝置之一俯視平面圖。1 is a top plan view of a packaged semiconductor light emitting device in accordance with some embodiments of the present invention.
圖2係依據本發明之其他具體實施例之一封裝半導體發光裝置之一俯視平面圖。2 is a top plan view of a packaged semiconductor light emitting device in accordance with another embodiment of the present invention.
圖3至6係依據本發明之一些具體實施例解說一形成圖2之封裝半導體發光裝置的方法之沿圖2的線A-A所取之斷面圖。3 to 6 are cross-sectional views taken along line A-A of Fig. 2, illustrating a method of forming the packaged semiconductor light emitting device of Fig. 2, in accordance with some embodiments of the present invention.
圖7係依據本發明之其他具體實施例之一封裝半導體發 光裝置之一斷面圖。7 is a package of semiconductor hair in accordance with another embodiment of the present invention. A cross-sectional view of a light device.
圖8係依據本發明之其他具體實施例之一半導體發光裝置之一斷面圖。Figure 8 is a cross-sectional view of a semiconductor light emitting device in accordance with another embodiment of the present invention.
圖9係依據本發明之一些具體實施例解說用以形成一封裝半導體發光裝置的操作之一流程圖。Figure 9 is a flow diagram illustrating the operation of forming a packaged semiconductor light emitting device in accordance with some embodiments of the present invention.
圖10係依據本發明之其他具體實施例解說用以形成一封裝半導體發光裝置的操作之一流程圖。Figure 10 is a flow diagram illustrating the operation of forming a packaged semiconductor light emitting device in accordance with other embodiments of the present invention.
700‧‧‧封裝半導體發光裝置700‧‧‧Package semiconductor light-emitting device
705‧‧‧基板705‧‧‧Substrate
707‧‧‧基板705之一前部面707‧‧‧One front surface of the substrate 705
708‧‧‧半導體發光裝置708‧‧‧Semiconductor lighting device
720‧‧‧第二光元件720‧‧‧second optical component
740‧‧‧第一光元件740‧‧‧First optical component
742‧‧‧添加劑742‧‧‧Additives
Claims (36)
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| US11/705,305 US7709853B2 (en) | 2007-02-12 | 2007-02-12 | Packaged semiconductor light emitting devices having multiple optical elements |
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| TW200843152A TW200843152A (en) | 2008-11-01 |
| TWI466313B true TWI466313B (en) | 2014-12-21 |
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| TW097104985A TWI466313B (en) | 2007-02-12 | 2008-02-12 | Methods of forming packaged semiconductor light emitting devices having multiple optical elements by compression molding |
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| JP (2) | JP2008211205A (en) |
| CN (1) | CN101261985B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| DE102008008057A1 (en) | 2008-08-21 |
| JP2011109134A (en) | 2011-06-02 |
| CN101261985B (en) | 2013-08-14 |
| JP2008211205A (en) | 2008-09-11 |
| TW200843152A (en) | 2008-11-01 |
| US20080194061A1 (en) | 2008-08-14 |
| CN101261985A (en) | 2008-09-10 |
| US7709853B2 (en) | 2010-05-04 |
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