Claims (13)
一種易於釋放晶片的靜電吸盤結構,包含基座(110)和設置在基座(110)頂部的介電層(120);所述介電層(120)上放置有晶片(200),在介電層(120)與晶片(200)之間產生有吸持固定所述晶片(200)的靜電引力;其特徵在於:所述介電層(120)中設置有提升所述介電層(120)溫度的若干加熱體(130),來減小所述介電層(120)與晶片(200)之間的靜電引力。An electrostatic chuck structure for easily releasing a wafer, comprising a susceptor (110) and a dielectric layer (120) disposed on a top portion of the susceptor (110); and a wafer (200) disposed on the dielectric layer (120) An electrostatic attraction between the electrical layer (120) and the wafer (200) is generated by holding and holding the wafer (200); wherein the dielectric layer (120) is provided with a lifted dielectric layer (120) A plurality of heaters (130) of temperature to reduce electrostatic attraction between the dielectric layer (120) and the wafer (200).
如申請專利範圍第1項所述的一種易於釋放晶片的靜電吸盤結構,其中,所述介電層(120)上設有若干分區,其中若干分區內嵌有所述加熱體(130)。An electrostatic chuck structure for releasing a wafer as described in claim 1, wherein the dielectric layer (120) is provided with a plurality of partitions, wherein the heating body (130) is embedded in several partitions.
如申請專利範圍第2項所述的一種易於釋放晶片的靜電吸盤結構,其中,所述若干加熱體(130)分別與升溫電源電性連接而發熱。An electrostatic chuck structure for releasing a wafer as described in claim 2, wherein the plurality of heating bodies (130) are electrically connected to the temperature-increasing power source to generate heat.
如申請專利範圍第3項所述的一種易於釋放晶片的靜電吸盤結構,其中,與所述介電層(120)若干分區內的加熱體(130)分別電性連接的所述升溫電源,具有相同或不同的直流電流。An electrostatic chuck structure for easily releasing a wafer according to claim 3, wherein the temperature-increasing power source electrically connected to the heating body (130) in the plurality of sections of the dielectric layer (120) has Same or different DC current.
如申請專利範圍第4項所述的一種易於釋放晶片的靜電吸盤結構,其中,所述介電層(120)若干分區內嵌入的加熱體(130),分別在所述介電層(120)內形成相同或不同的圖形形狀。An electrostatic chuck structure for easily releasing a wafer according to claim 4, wherein a heating body (130) embedded in a plurality of sections of the dielectric layer (120) is respectively in the dielectric layer (120) The same or different graphic shapes are formed inside.
如申請專利範圍第1項所述的一種易於釋放晶片的靜電吸盤結構,其中,所述介電層(120)上由若干加熱體(130)提升的表面溫度,在所述介電層(120)上晶片(200)取放的交替期間,由於斷開與所述升溫電源的電性連接,而恢復至原有工作溫度。An electrostatic chuck structure for releasing a wafer as described in claim 1, wherein a surface temperature of the dielectric layer (120) raised by the plurality of heating bodies (130) is at the dielectric layer (120) During the alternation of the upper wafer (200) pick-and-place, the original operating temperature is restored due to the electrical connection to the warming power source being disconnected.
如申請專利範圍第1項所述的一種易於釋放晶片的靜電吸盤結構,其中,所述加熱體(130)是嵌設在所述介電層(120)內的若干鎢絲(131)。An electrostatic chuck structure for releasing a wafer as described in claim 1, wherein the heating body (130) is a plurality of tungsten wires (131) embedded in the dielectric layer (120).
如申請專利範圍第1項所述的一種易於釋放晶片的靜電吸盤結構,其中,所述基座(110)還與射頻功率源連接,生成與所述晶片(200)反應的蝕刻氣體等離子體。An electrostatic chuck structure for releasing a wafer as described in claim 1, wherein the susceptor (110) is further connected to a radio frequency power source to generate an etching gas plasma that reacts with the wafer (200).
如申請專利範圍第1項所述的一種易於釋放晶片的靜電吸盤結構,其中,所述介電層(120)是由導熱的陶瓷材料製成的。An electrostatic chuck structure for releasing a wafer as described in claim 1, wherein the dielectric layer (120) is made of a thermally conductive ceramic material.
如申請專利範圍第1項所述的一種易於釋放晶片的靜電吸盤結構,其中,所述介電層(120)內還設置有電極(140),其與直流的電極電源電性連接,生成吸持所述晶片(200)的靜電引力。An electrostatic chuck structure for releasing a wafer according to claim 1, wherein the dielectric layer (120) is further provided with an electrode (140) electrically connected to the DC electrode power source to generate a suction. Holding the electrostatic attraction of the wafer (200).
一種易於釋放晶片的方法,其特徵在於,包含以下步驟:步驟1.1 切斷與所述介電層(120)內電極(140)電性連接的電極電源,減少所述晶片(200)與介電層(120)間的靜電引力;步驟1.2 連通與所述介電層(120)內加熱體(130)電性連接的升溫電源,使所述介電層(120)表面溫度提升;步驟2. 切斷所述升溫電源,取走所述晶片(200)。A method for easily releasing a wafer, comprising the steps of: stepping off an electrode power source electrically connected to an electrode (140) of the dielectric layer (120), and reducing the wafer (200) and dielectric The electrostatic attraction between the layers (120); the step 1.2 is connected to the heating power source electrically connected to the heating body (130) in the dielectric layer (120) to increase the surface temperature of the dielectric layer (120); The heating power source is turned off, and the wafer (200) is removed.
如申請專利範圍第11項所述的一種易於釋放晶片的方法,其中,在切斷所述升溫電源的步驟2後,還包含,在所述介電層(120)上晶片(200)取放的交替期間,使所述介電層(120)提升的表面溫度,恢復至原有工作溫度的步驟。A method for easily releasing a wafer according to claim 11, wherein after the step 2 of cutting the temperature-increasing power supply, the method further comprises: picking up the wafer (200) on the dielectric layer (120) During the alternation, the step of raising the surface temperature of the dielectric layer (120) to the original operating temperature.
如申請專利範圍第11項所述的一種易於釋放晶片的方法,其中,所述晶片(200)與介電層(120)之間、用於吸持固定所述晶片(200)的靜電引力,是在連通所述電極電源後產生的。A method for easily releasing a wafer according to claim 11, wherein the electrostatic attraction between the wafer (200) and the dielectric layer (120) for holding and fixing the wafer (200) is It is generated after the power supply of the electrodes is connected.