Claims (13)
一種移除光阻的方法,包含:提供一基材,其包含一圖案化光阻;對該基材進行一離子植入步驟,且該離子植入步驟會在該圖案化光阻的表面形成一硬殼;對該硬殼進行一非氧化性前處理,其中該非氧化性前處理提供包含氫氣、一載氣與一電漿以改變該硬殼的性質,但該非氧化性前處理未剝除該圖案化光阻;以及在非氧化性前處理之後,對該基材進行一光阻剝除步驟,以完全移除該圖案化光阻。
A method of removing photoresist includes: providing a substrate comprising a patterned photoresist; performing an ion implantation step on the substrate, and the ion implantation step is formed on a surface of the patterned photoresist a hard shell; a non-oxidative pretreatment of the hard shell, wherein the non-oxidative pretreatment provides hydrogen, a carrier gas and a plasma to modify the properties of the hard shell, but the non-oxidative pretreatment is not stripped The patterned photoresist; and after the non-oxidative pretreatment, the substrate is subjected to a photoresist stripping step to completely remove the patterned photoresist.
如請求項1的方法,其中該基材包含矽。
The method of claim 1, wherein the substrate comprises ruthenium.
如請求項1的方法,其中該離子植入步驟為一輕汲極摻雜。
The method of claim 1, wherein the ion implantation step is a light ruthenium doping.
如請求項1的方法,其中該非氧化性前處理包含一電漿灰化步驟,以破壞該光阻。
The method of claim 1, wherein the non-oxidative pretreatment comprises a plasma ashing step to destroy the photoresist.
如請求項1的方法,其中該載氣包含惰性氣體。
The method of claim 1, wherein the carrier gas comprises an inert gas.
如請求項1的方法,其中在一階段性溫度下進行該非氧化性前處理。
The method of claim 1, wherein the non-oxidative pretreatment is performed at a stage temperature.
如請求項6的方法,其中在150秒至300秒之間進行該階段性溫度。
The method of claim 6, wherein the phasing temperature is performed between 150 seconds and 300 seconds.
如請求項1的方法,其中該光阻剝除步驟包含使用硫酸之雙氧水溶液。
The method of claim 1, wherein the photoresist stripping step comprises using a hydrogen peroxide aqueous solution of sulfuric acid.
如請求項1的方法,其中該光阻剝除步驟包含使用氨之雙氧水溶液。
The method of claim 1, wherein the photoresist stripping step comprises using an aqueous solution of ammonia in ammonia.
如請求項1的方法,其中該光阻剝除步驟實質上不傷害該基材。
The method of claim 1, wherein the photoresist stripping step does not substantially damage the substrate.
如請求項1的方法,其中該光阻剝除步驟為一濕式清潔步驟。
The method of claim 1, wherein the photoresist stripping step is a wet cleaning step.
如請求項1的方法,其中該非氧化性前處理不使用氟。
The method of claim 1, wherein the non-oxidative pretreatment does not use fluorine.
如請求項1的方法,其中該非氧化性前處理不使用紫外線照射。
The method of claim 1, wherein the non-oxidative pretreatment does not use ultraviolet radiation.