TWI455363B - 發光二極體封裝結構及其製造方法 - Google Patents

發光二極體封裝結構及其製造方法 Download PDF

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TWI455363B
TWI455363B TW100112714A TW100112714A TWI455363B TW I455363 B TWI455363 B TW I455363B TW 100112714 A TW100112714 A TW 100112714A TW 100112714 A TW100112714 A TW 100112714A TW I455363 B TWI455363 B TW I455363B
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substrate
emitting diode
light emitting
hole
substrates
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TW201242098A (en
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Ming Ta Tsai
Ching Chung Chen
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Advanced Optoelectronic Tech
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Description

發光二極體封裝結構及其製造方法
本發明涉及半導體結構，尤其涉及一種發光二極體封裝結構及其製造方法。
目前發光二極體(Light Emitting Diode,LED)封裝結構通常包括一個反射杯結構，所述反射杯常設於基板的上方，發光二極體放置於反射杯中。這種發光二極體封裝結構中基板與反射杯之間容易形成縫隙，水汽和灰塵容易沿該縫隙進入封裝後的發光二極體封裝結構中，從而影響該發光二極體封裝結構的壽命，甚至造成發光二極體的失效。
有鑒於此，有必要提供一種密封性更好的發光二極體封裝結構及其製造方法。
一種發光二極體封裝結構，包括基板、電極、反射杯、發光二極體晶片和封裝層。所述基板包括第一表面、相對的第二表面及兩相對側面。所述電極至少為兩個，所述電極形成在所述基板上，且自第一表面沿兩相對側面延伸至第二表面，所述發光二極體晶片與所述電極電性連接。所述反射杯位於所述基板的第一表面，且向下延伸覆蓋所述電極位於基板側面的部分。所述封裝層覆蓋所述發光二極體晶片，並填滿所述反射杯。
一種發光二極體封裝結構的製造方法，包括以下步驟：提供兩基片，每一基片具有相對的外表面和接合面，所述兩基片上對應位置處形成有貫穿外表面和接合面的多條通孔，在該通孔靠近接合面的開口兩側均形成階梯結構；在基片的表面上形成電極，所述電極覆蓋所述外表面、所述通孔和階梯結構的內壁表面；將兩基片的接合面相貼合，並使得所述電極對應電連接，形成基板，所述兩基片的外表面分別為所述基板的上表面和下表面；將發光二極體晶片固定於基板上表面，並將發光二極體晶片與所述電極電性連接；在所述基板的上表面形成反射杯，該反射杯向下延伸，填滿所述通孔；於反射杯內形成一封裝層，覆蓋所述發光二極體晶片；沿通孔切割，得到發光二極體封裝結構。
上述發光二極體封裝結構中，由於所述反射杯向下延伸覆蓋基板側面的電極，能夠增加外界的水汽和灰塵進入該封裝體的路徑距離，有效的阻擋外界的水汽和灰塵滲透進該封裝體內。同時由於基板側面的電極被反射杯覆蓋，還能起到保護電極不被氧化的作用。
10‧‧‧發光二極體封裝結構
11‧‧‧基板
12‧‧‧電極
13‧‧‧發光二極體晶片
14‧‧‧反射杯
15‧‧‧封裝層
111‧‧‧第一表面
112‧‧‧第二表面
113‧‧‧側面
114‧‧‧基片
131‧‧‧金屬導線
1131‧‧‧凹槽
1141‧‧‧接合面
1142‧‧‧外表面
1143‧‧‧通孔
1144‧‧‧階梯結構
圖1係本發明一實施方式提供的一種發光二極體封裝結構示意圖。
圖2係本發明提供的一種發光二極體封裝結構的製造方法流程圖。
圖3至圖9係本發明提供的發光二極體封裝結構的製造方法示意圖。
以下將結合附圖對本發明作進一步的詳細說明。
請參閱圖1，本發明的一實施方式提供一種發光二極體封裝結構10，其包括基板11、電極12、發光二極體晶片13、反射杯14和封裝層15。
該基板11呈板體狀，所述基板11用於支撐所述發光二極體封裝結構10。所述基板11包括相對的第一表面111和第二表面112，以及分別位於左右兩相對側的側面113。進一步的，該兩相對側面113上形成有凹槽1131，該凹槽1131的延伸方向與第一表面111平行。所述凹槽1131可為條狀，還可以在前後方向上貫穿所述基板11。本實施例中，所述基板11材料為矽晶圓。
電極12至少為兩個，所述電極12形成在所述基板11上，且自第一表面111沿兩相對側面113延伸至第二表面112。此外，該電極12沿該凹槽1131的內壁延伸，並完全覆蓋凹槽1131的整個內壁。各電極12相互之間電絕緣。所述電極12所用的材料為導電性能較好的金屬材料，如金、銀、銅、鉑、鋁、鎳、錫或鎂中的一種或幾種的合金。
發光二極體晶片13貼設於第一表面111上。更具體的，發光二極體晶片13置於一電極12上。所述發光二極體晶片13通過金屬導線 131與所述電極12電性連接。可以理解的，該發光二極體晶片13也可以採用覆晶的方式固定於電極12上並與電極12電連接。
反射杯14形成於所述第一表面111的周圍，在第一表面111上形成一個碗狀結構，用於容置發光二極體晶片13等。所述反射杯14向下沿基板11的側面113延伸，覆蓋所述側面113上的電極12。此外，反射杯14填滿所述凹槽1131。所述反射杯14與基板11所用材料不同，且分別形成。
封裝層15形成於所述基板11上的反射杯14內，覆蓋所述發光二極體晶片13和金屬導線131。所述封裝層15的材質可以為矽膠(silicone)、環氧樹脂(epoxy resin)或二者的組合物。所述封裝層15還可以包含螢光轉換材料，該螢光轉換材料可以為石榴石基螢光粉、矽酸鹽基螢光粉、原矽酸鹽基螢光粉、硫化物基螢光粉、硫代鎵酸鹽基螢光粉和氮化物基螢光粉。所述封裝層15可以保護發光二極體晶片13免受灰塵、水氣等影響。
請參閱圖2至圖9，本發明實施方式提供的一種發光二極體封裝結構的製造方法包括以下步驟。
步驟S201：請參閱圖3，提供兩基片114，所述基片114包括相對的接合面1141和外表面1142，兩基片114相對放置，在所述兩基片114上對應位置處形成有相互平行的貫穿所述接合面1141和外表面1142的多條條狀通孔1143，在該通孔1143靠近接合面1141的開口周圍或者兩側均形成有階梯結構1144。本實施例中，所述基片114為矽晶圓。所述通孔和階梯結構係通過蝕刻的方法形成。
步驟S202：請參閱圖4，在基片114的表面上形成電極12。所述電 極12覆蓋所述外表面1142、所述通孔1143和所述階梯結構1144的內壁表面，所述電極12於外表面1142上互相分離成兩個部分。所述電極12所用的材料為金、銀、銅、鉑、鋁、鎳、錫或鎂中的一種或幾種的合金。所述電極12採用電鍍、磁控濺射、化學鍍或晶圓鍵合等方法形成。
步驟S203：請參閱圖5，將兩基片114的接合面1141相接合，並使得所述電極12對應電連接，形成基板11。接合後，所述階梯結構1144對應形成凹槽1131。兩基片114的外表面1142分別形成基板11的第一表面111和第二表面112。本實施例中基板11上的電極12係由分別形成在所述基片114上的兩個部分接合而成。可以理解的，該電極12也可以在兩基片114接合形成基板11之後鍍於基板11的表面以及凹槽1131和通孔1143的內壁表面。本實施例中，兩基片114通過晶圓鍵合技術接合成為一塊基板11。
步驟S204：請參閱圖6，將所述發光二極體晶片13固定於所述第一表面111的電極12上。本實施例中採用黏著膠固定發光二極體晶片13。所述發光二極體晶片13通過金屬導線131與所述電極12電性連接。
步驟S205：請參閱圖7，在所述基板11的第一表面111上形成反射杯14，該反射杯14向下延伸，填滿所述通孔1143和凹槽1131。所述反射杯14通過注塑成型或傳遞模塑成型的方法形成。
步驟S206：請參閱圖8，在所述基板11上的反射杯14內形成所述封裝層15，所述封裝層15覆蓋所述發光二極體晶片13和金屬導線131。所述封裝層15的材質可以為矽膠、環氧樹脂或二者的組合物。所述封裝層15還可以包含螢光轉換材料。所述封裝層15可以 保護發光二極體晶片13免受灰塵、水氣等影響。
步驟S207：請參閱圖9，沿所述通孔1143的中心切割所述基板11，得到互相分離的複數發光二極體封裝結構10。
可以理解的，所述基板11的形成也可以通過提供一塊基板11，直接在該基板上形成通孔1143，並在該通孔1143內形成半徑大於該通孔1143的凹槽1131。所述電極12直接覆蓋在所述外表面1142及所述通孔和所述階梯結構1144的內壁表面，所述電極12於外表面1142上的互相分離成兩個部分。
本發明實施方式提供的發光二極體封裝結構中，由於所述反射杯向下延伸覆蓋基板側面的電極，能夠增加外界的水汽和灰塵進入該封裝體的路徑距離，有效的阻擋外界的水汽和灰塵滲透進該封裝體內。同時，在所述基板相對兩側面形成有凹槽結構，並用反射杯材料填滿所述凹槽，進一步的增加了滲透路徑的距離，而且形成曲線路徑，能夠更加有效的保護封裝結構。同時由於基板側面的電極被反射杯覆蓋，還能起到保護電極不被氧化的作用。
另外，本領域技術人員還可在本發明精神內做其他變化，當然，該等依據本發明精神所做之變化，都應包含在本發明所要求保護之範圍之內。
10‧‧‧發光二極體封裝結構
11‧‧‧基板
12‧‧‧電極
13‧‧‧發光二極體晶片
14‧‧‧反射杯
15‧‧‧封裝層
111‧‧‧第一表面
112‧‧‧第二表面
113‧‧‧側面
131‧‧‧金屬導線
1131‧‧‧凹槽

Claims (8)

  1. 一種發光二極體封裝結構的製造方法，包括以下步驟：提供兩基片，每一基片具有相對的外表面和接合面，所述兩基片上對應位置處形成有貫穿外表面和接合面的多條通孔，在該通孔靠近接合面的開口兩側或者周圍均形成階梯結構；在基片的表面上形成電極，所述電極覆蓋所述外表面、所述通孔和階梯結構的內壁表面；將兩基片的接合面相接合，並使得所述電極對應電連接，形成基板，所述兩基片的外表面分別為所述基板的上表面和下表面，所述階梯結構對應形成凹槽；將發光二極體晶片固定於基板上表面，並將發光二極體晶片與所述電極電性連接；在所述基板的上表面形成反射杯，該反射杯向下延伸，填滿所述通孔及凹槽；於反射杯內形成一封裝層，覆蓋所述發光二極體晶片；沿通孔切割，得到發光二極體封裝結構。
  2. 一種發光二極體封裝結構的製造方法，包括以下步驟：提供兩基片，每一基片具有相對的外表面和接合面，所述兩基片上對應位置處形成有貫穿外表面和接合面的多條通孔，在該通孔靠近接合面的開口兩側或者周圍均形成階梯結構；將兩基片的接合面相接合形成基板，所述兩基片的外表面分別為所述基板的上表面和下表面，所述階梯結構對應形成凹槽；在兩基片上形成電極，所述電極覆蓋所述外表面、所述通孔和階梯結構 的內壁表面；將發光二極體晶片固定於基板上表面，並將發光二極體晶片與所述電極電性連接；在所述基板的上表面形成反射杯，該反射杯向下延伸，填滿所述通孔及凹槽；於反射杯內形成一封裝層，覆蓋所述發光二極體晶片；沿通孔切割，得到發光二極體封裝結構。
  3. 如申請專利範圍第1項或第2項所述的發光二極體封裝結構的製造方法，其中：所述基片為矽晶圓，兩基片通過晶圓鍵合技術貼合成為一塊基板。
  4. 如申請專利範圍第1項或第2項所述的發光二極體封裝結構的製造方法，其中：所述反射杯通過注塑成型或傳遞模塑成型的方法形成。
  5. 如申請專利範圍第1項或第2項所述的發光二極體封裝結構的製造方法，其中：所述通孔和階梯結構係通過蝕刻的方法形成。
  6. 如申請專利範圍第1項或第2項所述的發光二極體封裝結構的製造方法，其中：所述電極採用電鍍、磁控濺射、化學鍍或晶圓鍵合的方法形成。
  7. 如申請專利範圍第1項或第2項所述的發光二極體封裝結構的製造方法，其中：所述通孔之間相互平行設置。
  8. 如申請專利範圍第1項或第2項所述的發光二極體封裝結構的製造方法，其中：在沿通孔切割，得到發光二極體封裝結構的步驟中係沿通孔的中心線切割所述基板得到互相分離的多個發光二極體封裝結構。
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