TWI451594B - 製造led封裝的方法 - Google Patents
製造led封裝的方法 Download PDFInfo
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- TWI451594B TWI451594B TW097124566A TW97124566A TWI451594B TW I451594 B TWI451594 B TW I451594B TW 097124566 A TW097124566 A TW 097124566A TW 97124566 A TW97124566 A TW 97124566A TW I451594 B TWI451594 B TW I451594B
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- led
- lead frame
- mold
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 title claims description 10
- 239000011347 resin Substances 0.000 claims description 26
- 229920005989 resin Polymers 0.000 claims description 26
- 235000012431 wafers Nutrition 0.000 claims description 24
- 239000007788 liquid Substances 0.000 description 11
- 238000010923 batch production Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
- B29C45/2608—Mould seals
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- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/11—Device type
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Description
本發明是有關於一種製造發光二極體(Light emitting diode,LED)封裝的方法,特別是有關於基於批量封裝製程的製造LED封裝的方法,其中在引線框條上製造LED封裝時,同時形成多個封裝構件以保護設置於各LED封裝中的LED晶片。
一般來說,發光二極體(Light emitting diode,LED)是基於在施加電流後P-N半導體接面中的電子和電洞之間的再結合(recombination)進行發光。LED以封裝結構進行製造,通常被稱為LED封裝,LED晶片則安裝於封裝結構內。LED封裝配置成在從外部電源施加電流後進行發光。
LED封裝通常可分為印刷電路板(Printed Circuit Board,PCB)型LED封裝和引線框(lead frame)型LED封裝。在PCB型LED封裝中,LED晶片安裝在PCB的導電圖案上,以接收從外部提供的電流。在引線框型LED封裝中,外部電流是透過引線框施加。對於PCB型LED封裝而言,將多個LED晶片形成於單個大型PCB上,並隨後提供封裝構件來覆蓋這些LED晶片,接著再把PCB分割成多個獨立的LED封裝。對於引線框型LED封裝而言,將多個LED晶片安裝於板狀引線框條(lead frame stripe)的多個位置,引線框條具有用以定義多個引線框的孔圖
案;隨後形成封裝構件和/或外殼來覆蓋LED晶片;接著再把引線框條分割成多個LED封裝。
本發明的申請人已經開發了一種以批量製程形式來形成多個封裝構件的技術,此技術被稱為傳送成型(transfer molding)。在傳送成型中,透過加壓和加熱使環氧料片(epoxy tablet)液化,並同時使液化的材料到達位於PCB之若干位置的各LED晶片周圍。
這個習知技術被選擇性地運用在封裝構件是形成於基板(特別是PCB)上的情況下,比如PCB型LED封裝,此時基板的前後兩側完全封閉。然而,在製造引線框型LED的製程中,在分割前必需於單個引線框條上形成多個封裝構件,且定義出引線框的孔圖案導致不容易批量形成多個封裝構件。這是因為,當藉由提供液態樹脂至放置有引線框條的模具中來形成封裝構件時,液態樹脂容易從以預定圖案配置的孔中洩漏。
基於上述原因,當在引線框條上製造多個LED封裝時,將多個LED晶片形成於引線框上的多個位置,製備多個包括包圍LED晶片之空腔的外殼,並且隨後將液態樹脂注入外殼的各空腔內,藉此形成封裝構件。然而,上述用以形成封裝構件的注入方法不僅複雜,而且成本高且費時。
有鑒於習知技術的上述問題,本發明的目的是提供一種製造LED封裝的方法,其基於在圖案孔封閉的引線框條上批量形成多個封裝構件。
根據本發明的一方面,本發明的上述以及其他目的由一種製造LED封裝的方法實現,此方法包括:製備引線框條,其具有由圖案孔定義並且相互連接的多個引線框;在引線框條的指定區域上安裝多個LED晶片;設置虛框於引線框條上以使二者相互重疊,其中虛框封閉圖案孔並同時暴露引線框條的指定區域;將與虛框重疊的引線框條置放於模具內;藉由向模具內注入液化樹脂來同時封裝位於引線框條指定區域上的LED晶片。
引線框條可形成有包括空腔的外殼,各空腔包圍對應的指定區域,並且在封裝LED晶片時,注入模具的液化樹脂填充空腔以封裝位於各空腔內的LED晶片。
虛框可以是板狀框架,其具有配置於外殼上的暴露孔以暴露指定區域。模具配置成在模具和虛框之間定義出與空腔連通的流道。模具可以包括多種成型形狀,其決定封裝LED晶片的封裝構件的形狀。樹脂可以是矽樹脂。
根據本發明的實施例,當將LED晶片安裝於具有圖案孔的引線框條的多個區域上後,並用液態樹脂封裝LED晶片時,圖案孔被虛框所封閉,並且隨後使液態樹脂同時提供到LED晶片所置放的各區域,以同時封裝多個LED晶片而不會有液態樹脂從引線框條的圖案孔漏出。特別地,這種使用虛框的批量封裝製程適於使用矽樹脂的應用,矽樹脂通常需要長時間固化,並且難以用傳送成型法來形成封裝構件。
將參照附圖詳細描述本發明的示範性實施例。實施例是作為說明給出的,以使本領域熟知此項技藝者可更全面地理解本發明。然而,本發明可以許多不同形式來實施並且不應侷限於這些實施例。進一步,為了便於描述,附圖中元件的寬度、長度以及厚度並未按比率繪製。在整個說明書內相同元件由相同的參考標記標識。
圖1是形成LED封裝的單個引線框條的平面圖。圖2是沿圖1中線I-I的橫截面圖。
參閱圖1和圖2,引線框條10具有實質上為板狀的結構,並形成有多個圖案孔12。此外,多個LED封裝20與引線框條10相結合。圖案孔12定義引線框14,引線框14其將從引線框條10分割開。引線框條10被分割以構成獨立的LED封裝20的一部份。
如圖1的放大示意圖A中所示的,LED封裝20包括外殼22,其支撐引線框14。外殼22具有空腔22a,其收容安裝在引線框條10的多個區域上的LED晶片24中相對應的一個。或者,每一空腔22a也可以收容多個LED晶片24。在本實施例中,LED晶片24安裝於單個引線框14上,並且引線框14透過接合線(bonding wire)電性連接至其他相鄰的引線框14。藉由將位於指定位置的引線框14從引線框條10分割,可從引線框條10分離出各個LED封裝20。
如圖1和圖2所示,封裝構件26是形成於外殼22的空腔22a內,以保護安裝在引線框條10的多個位置的LED
晶片24。此處,藉由向模具內注入液態樹脂而同時形成封裝構件26,將在下文中進行詳細描述。請參閱圖3至圖6,接下來將詳細描述同時形成封裝構件26的方法。
首先,如圖3所示,製備板狀引線框條10。引線框條10具有安裝於其指定區域內的LED晶片24以及外殼22,外殼22分別具有收容對應LED晶片24空腔22a。引線框條10形成有多個圖案孔12,並且包括多個相互連接且具有由圖案孔12定義之形狀的引線框14。
接著,如圖4所示,將板狀虛框30置放於引線框條10的頂部,以使二者相互重疊。虛框30包括配置於外殼22上的暴露孔32,使得外殼22的空腔22a分別經暴露孔32向上暴露。相反,還可以利用封裝構件26作為外殼,而非提供外殼22,並且在這種情況下,暴露孔32暴露安裝LED晶片24的引線框條10的多個區域。
在本實施例中,如圖7(a)所示,暴露孔32為對應於外殼22之外形的矩形。然而,如圖7(b)所示,當外殼22為圓形時,暴露孔32可以為圓形。進一步地,暴露孔32可以具有與外殼22形狀對應的各種幾何形狀。當與引線框條10重疊時,虛框30完全地封閉形成於引線框條10上的上述多個圖案孔12。
然後,如圖5所示,隨著圖案孔12由虛框30封閉,將引線框條10放置在用以成型封裝構件26(請參閱圖2)的模具40內。模具40可由透過特定驅動方式打開或者關閉的上模具42和下模具44構成。在關閉狀態下,模具40
定義出用以收容相互重疊之虛框30和引線框條10的空間。定義於模具40內的空間的形狀和尺寸由引線框條10、虛框30以及外殼22的形狀和尺寸所決定。
特別是,上模具42形成有實質上半圓形的成型形狀(molding shape)422,其決定封裝構件26的形狀。此外,流道(runner)424設置於上模具42和虛框30之間,並連通由成型形狀422和空腔22a之間所定義的全部空間。流道424與貫穿上模具42所形成的樹脂注入埠425相連通。
然後,如圖6所示,利用液態樹脂,尤以矽樹脂為佳,在空腔22a內形成封裝構件26。此處,藉由加熱使矽樹脂液化並使其經由樹脂注入埠425注入模具40內。隨後,液態樹脂經由流道424提供到LED晶片所置放的引線框條10的各指定區域,並且填充空腔22a,如此一來,藉由成型形狀422使液態樹脂形成半圓形。當液態樹脂在空腔22a和成型形狀422之間所定義的空間內固化後,形成如圖1和圖2所示的封裝構件26。
然後,移動上模具42和/或下模具44以打開模具40,並從模具40中移出具有多個封裝構件26的引線框條10,其中封裝構件26覆蓋對應的LED晶片24。最後,在指定位置分割引線框條10的引線框14,以提供分別具有二引線框14的LED封裝20。在每一LED封裝內,LED晶片24安裝在二引線框14中之一者上且由封裝構件26所封裝。此處,藉由使用上述的虛框30,能以批量封裝製程來同時形成封裝構件26。
10‧‧‧引線框條
12‧‧‧圖案孔
14‧‧‧引線框
20‧‧‧LED封裝
22‧‧‧外殼
22a‧‧‧空腔
24‧‧‧LED晶片
26‧‧‧封裝構件
30‧‧‧虛框
32‧‧‧暴露孔
40‧‧‧模具
42‧‧‧上模具
44‧‧‧下模具
422‧‧‧成型形狀
424‧‧‧流道
425‧‧‧樹脂注入埠
A‧‧‧放大示意圖
I-I‧‧‧線
圖1是形成LED封裝的單個引線框條的平面圖。
圖2是沿圖1所示線I-I的橫截面圖。
圖3至圖6是描述利用樹脂來封裝安裝在引線框條的多個區域上的LED晶片之批量製程的橫截面圖。
圖7(a)與圖7(b)是在進行利用樹脂封裝LED晶片之批量製程中,放置成與引線框條重疊的示範性虛框的示意圖。
10‧‧‧引線框條
12‧‧‧圖案孔
14‧‧‧引線框
20‧‧‧LED封裝
22‧‧‧外殼
22a‧‧‧空腔
24‧‧‧LED晶片
26‧‧‧封裝構件
A‧‧‧放大示意圖
I-I‧‧‧線
Claims (5)
- 一種製造LED封裝的方法,包括:製備引線框條,其具有多個由圖案孔定義並相互連接的引線框;安裝LED晶片於所述引線框條的指定區域上;設置虛框於所述引線框條上以使二者相互重疊,所述虛框封閉所述圖案孔,同時暴露所述引線框條的所述指定區域;將與所述虛框重疊的所述引線框條置放至模具內;以及藉由向所述模具內注入液化樹脂來同時封裝位於所述引線框條的所述指定區域上的所述LED晶片,其中經暴露的所述指定區域位於相鄰的所述圖案孔之間,其中所述引線框條形成有具有空腔的外殼,各所述空腔包圍對應的所述指定區域,且在封裝所述LED晶片的步驟中,注入到所述模具內的所述液化樹脂填充所述空腔,以封裝位於各所述空腔內的所述LED晶片。
- 如申請專利範圍第1項所述之製造LED封裝的方法,其中所述虛框是板狀框架,具有配置於所述外殼上的暴露孔以暴露所述指定區域。
- 如申請專利範圍第2項所述之製造LED封裝的方法,其中所述模具配置成在所述模具和所述虛框之間,以定義與所述空腔連通的流道。
- 如申請專利範圍第2項所述之製造LED封裝的方 法,其中所述模具包括多個成型形狀,其決定封裝所述LED晶片的封裝構件的形狀。
- 如申請專利範圍第1至4項中任一項所述之製造LED封裝的方法,其中所述樹脂是矽樹脂。
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