TWI444625B - High frequency probe card - Google Patents
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- TWI444625B TWI444625B TW101109548A TW101109548A TWI444625B TW I444625 B TWI444625 B TW I444625B TW 101109548 A TW101109548 A TW 101109548A TW 101109548 A TW101109548 A TW 101109548A TW I444625 B TWI444625 B TW I444625B
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Description
本發明係與用於量測電子產品電性的探針有關，更詳而言之是指一種高頻探針卡。The present invention relates to probes for measuring the electrical properties of electronic products, and more particularly to a high frequency probe card.
探針卡的主要目的是藉由其探針直接與待測物(如：晶片)上的銲墊或是凸塊直接接觸，以引出待測物(晶片)訊號，再配合周邊測試儀器與軟體控制而達到自動化量測目的，並進一步地篩選出不良品。The main purpose of the probe card is to directly contact the solder pad or bump on the object to be tested (such as a wafer) to extract the signal of the object to be tested (wafer), and then cooperate with the peripheral test instrument and software. Control to achieve automated measurement purposes, and further screening out defective products.
然而，影響量測結果的因素許多，其中一種即是探針卡、測試儀器及待測物彼此之間的阻抗能否匹配，又影響阻抗匹配的因素例如有：設置在量測訊號傳輸路徑上的銲墊或凸塊數量，數目越多者將使得阻抗值增加而不利於訊號傳輸；或，相鄰探針之間的距離，亦常是影響阻抗能否匹配的因素之一。另一種可影響量測結果的因素則為探針本身的電性傳導能力。換言之，為能獲得良好且準確的量測結果，有效地控制探針卡、測試儀器及待測物之間的阻抗匹配情形，以及選用具備良好電性傳導能力的探針，為可行的選項，甚者，若能結合該二者，更將有利於提高量測精準度。However, there are many factors affecting the measurement results, one of which is whether the impedance between the probe card, the test instrument and the object to be tested can be matched, and the factors affecting the impedance matching are, for example, set on the measurement signal transmission path. The number of pads or bumps, the greater the number will increase the impedance value is not conducive to signal transmission; or, the distance between adjacent probes is often one of the factors affecting the impedance matching. Another factor that can affect the measurement results is the electrical conductivity of the probe itself. In other words, in order to obtain good and accurate measurement results, it is a viable option to effectively control the impedance matching between the probe card, the test instrument and the test object, and to select a probe with good electrical conductivity. In addition, if the two can be combined, it will be more beneficial to improve measurement accuracy.
其次，在電子產品日趨輕薄短小化的同時，該已知將為數眾多的探針擺放於相同平面(或謂相同高度)的探針卡，將發 生各探針難以有效對準待測物的情形，為此，若能在兼顧阻抗匹配的前提下，有效改變探針的擺設方式，將使得探針卡可應用於量測更趨精緻細微化且排列縝密(fine pitch)的待測物。Secondly, while the electronic products are becoming thinner and lighter, the probe card, which is known to place a large number of probes on the same plane (or the same height), will be issued. It is difficult to effectively align the probes with the object to be tested. For this reason, if the probes are effectively changed under the premise of impedance matching, the probe card can be applied to the measurement to be more refined and refined. And the fine pitch of the test object is arranged.
有鑑於此，本發明之主要目的在於提供一種高頻探針卡，係可提升電性傳導能力，以提高量測精準度。In view of this, the main object of the present invention is to provide a high-frequency probe card, which can improve electrical conductivity and improve measurement accuracy.
本發明之次要目的在於提供一種高頻探針卡，係具有良好阻抗匹配效果，且可應用於待測物排列更為緊密的場合中以進行電性量測用。A secondary object of the present invention is to provide a high-frequency probe card which has a good impedance matching effect and can be applied to an occasion where the object to be tested is arranged more closely for electrical measurement.
緣以達成上述目的，本發明所提供之高頻探針包含一訊號針與一阻抗匹配結構。其中，該訊號針包括有一探針本體，及一高導電率層包覆該探針本體表面；該阻抗匹配結構與該訊號針平行設置，且與該高導電率層電性隔離。In order to achieve the above object, the high frequency probe provided by the present invention comprises a signal pin and an impedance matching structure. The signal pin includes a probe body, and a high conductivity layer covers the surface of the probe body; the impedance matching structure is disposed in parallel with the signal pin and electrically isolated from the high conductivity layer.
在一實施例中，該阻抗匹配結構包括有一金屬線與一絕緣層，該金屬線位於該訊號針外部，該絕緣層包覆該金屬線。In one embodiment, the impedance matching structure includes a metal line and an insulating layer, the metal line is outside the signal pin, and the insulating layer covers the metal line.
在另一實施例中，該阻抗匹配結構為一金屬套管，該金屬套管包括有一絕緣內層與一金屬表層，而該訊號針穿過該絕緣內層。In another embodiment, the impedance matching structure is a metal sleeve including an insulating inner layer and a metal surface, and the signal pin passes through the insulating inner layer.
又，依據上述構思，該高導電率層係自金、銀、銅及鋁材料所構成族群中擇一製成者。且該訊號針之探針本體具有一針尖、一針身與一針尾，該高導電率層包覆於探針本體的針身上。Further, in accordance with the above concept, the high conductivity layer is selected from the group consisting of gold, silver, copper, and aluminum materials. And the probe body of the signal pin has a needle tip, a needle body and a needle tail, and the high conductivity layer is coated on the needle body of the probe body.
本發明再提供一種高頻探針卡，係包括有一電路板、一訊號針層與一接地電位層。其中，該訊號針層設置於該電路板之一表面，且包括至少一訊號針，該訊號針具有一探針本體與一高導電率層，其中該高導電率層包覆該探針本體表面；該接地電位層設置於該訊號針層的上方或下方，且包括電性連接之一接地針與一阻抗匹配結構，其中該阻抗匹配結構與該訊號針平行設置，且彼此間為電性隔離。The invention further provides a high frequency probe card comprising a circuit board, a signal pin layer and a ground potential layer. The signal pin layer is disposed on a surface of the circuit board and includes at least one signal pin, the signal pin has a probe body and a high conductivity layer, wherein the high conductivity layer covers the surface of the probe body The ground potential layer is disposed above or below the signal pin layer, and includes an electrical grounding pin and an impedance matching structure, wherein the impedance matching structure is disposed in parallel with the signal pin, and is electrically isolated from each other .
在一實施例中，該阻抗匹配結構為一金屬線，該金屬線鄰近但不接觸該訊號針。較佳者，該接地電位層更包括有一導電件，該導電件電性連接該金屬線與該接地針。In one embodiment, the impedance matching structure is a metal line that is adjacent to but not in contact with the signal pin. Preferably, the ground potential layer further includes a conductive member electrically connected to the metal line and the ground pin.
在一實施例中，該高頻探針卡係包括有兩層以上的訊號針層，而該接地電位層位於該二訊號針層之間，該阻抗匹配結構包括有兩條以上的金屬線各別鄰近一該訊號針。In one embodiment, the high frequency probe card includes two or more signal pin layers, and the ground potential layer is located between the two signal pin layers, and the impedance matching structure includes two or more metal wires. Don't be adjacent to a signal pin.
在另一實施例中，該高頻探針卡包括有一第一至一第四訊號針層，以及至少二接地電位層，其中一接地電位層位於第一及第二訊號針層之間，另一接地電位層位於第三及第四訊號針層之間。In another embodiment, the high frequency probe card includes a first to fourth signal pin layer, and at least two ground potential layers, wherein a ground potential layer is between the first and second signal pin layers, and A ground potential layer is between the third and fourth signal pin layers.
藉此，本發明之高頻探針具有良好的電性傳導能力，且在有效控制阻抗匹配的情況下，使得具有該高頻探針的探針卡用於量測時可提高量測結果的精準度。Thereby, the high-frequency probe of the present invention has good electrical conductivity, and in the case of effectively controlling the impedance matching, the probe card having the high-frequency probe can be used for measurement to improve the measurement result. Precision.
為能更清楚地說明本發明，茲舉較佳實施例並配合圖示詳細說明如后。In order that the present invention may be more clearly described, the preferred embodiments are illustrated in the accompanying drawings.
圖1至圖3所示為本發明第一較佳實施例之高頻探針卡100，揭示在一電路板10底面佈設有多數個訊號接點10a與多數個接地接點10b，以及多數訊號針12一端與對應的訊號接點10a連接，接地針14再電性連接至接地接點10b。1 to 3 show a high-frequency probe card 100 according to a first preferred embodiment of the present invention. A plurality of signal contacts 10a and a plurality of ground contacts 10b are disposed on a bottom surface of a circuit board 10, and a plurality of signals are provided. One end of the pin 12 is connected to the corresponding signal contact 10a, and the ground pin 14 is electrically connected to the ground contact 10b.
該高頻探針卡100為能適用於量測更精緻細微化的待測物使用，特將該些訊號針12與接地針14以分層方式設計，即，將不同用途的探針擺放於相同平面(或謂相同高度)處，在本實施例中，該高頻探針卡100區分有用於傳輸高頻訊號的訊號針層12A與接地電位層14A，且以兩層的訊號針層12A與一層的接地電位層14A為例，該接地電位層14A位於該二訊號針層12A之間。The high-frequency probe card 100 is suitable for measuring more delicate and fine objects to be tested, and the signal pins 12 and the grounding pins 14 are designed in a layered manner, that is, the probes for different purposes are placed. In the same plane (or the same height), in the embodiment, the high-frequency probe card 100 is divided into a signal pin layer 12A for transmitting high-frequency signals and a ground potential layer 14A, and has two layers of signal pin layers. For example, the ground potential layer 14A of 12A and one layer is located between the two signal pin layers 12A.
請配合圖1及圖4，上述中的訊號針層12A之每一根訊號針12是由一探針本體121與一高導電率層122所構成。其中該探針本體121具有一針尖121a、一針身121b與一針尾121c，該針尖121a用於接觸待測物(圖未示)，該針尾121c即是與該電路板10的訊號接點10a電性連接；而該高導電率層122是自金、銀、銅及鋁材料所構成族群中擇一製成，在本實施例中是以銀為例，且該高導電率層122包覆於該探針本體121的針身121b上，以使該針尖121a裸露以便於接觸待測物。由於在高頻量測環境中，各訊號針12的表面會產生肌膚效應(skin effect)，而各訊號針12的表面具有該高導電率層122，會提高訊號針12的電性傳導能力。1 and 4, each of the signal pins 12 of the signal pin layer 12A is composed of a probe body 121 and a high conductivity layer 122. The probe body 121 has a needle tip 121a, a needle body 121b and a needle tail 121c for contacting an object to be tested (not shown). The needle tail 121c is a signal contact point 10a with the circuit board 10. The high-conductivity layer 122 is made of a group of gold, silver, copper, and aluminum materials. In this embodiment, silver is taken as an example, and the high-conductivity layer 122 is coated. The needle body 121b of the probe body 121 is exposed to expose the needle tip 121a to contact the object to be tested. Since the surface of each of the signal pins 12 has a skin effect in a high-frequency measurement environment, and the surface of each of the signal pins 12 has the high-conductivity layer 122, the electrical conductivity of the signal pin 12 is improved.
另，上述中的接地電位層14A除了具有該接地針14之外，更包括有一導電件16及一阻抗匹配結構。在本實施例中，該導電件16是以銅箔為例但不以此為限，該阻抗匹配結構則為兩條金屬線18，且各金屬線18平行一對應的訊號針12。其中，導電件16呈展開設置，而該接地針14與各該金屬線18的一端分別擺放於該導電件16的表面，藉此以達成電性連接目的；至於各該金屬線18，則是以接近但不接觸所對應訊號針12的方式設置，不僅可確保訊號針12與金屬線18之間彼此為電性隔離，更因金屬線18連接至接地電位而使得訊號針12獲得良好的阻抗匹配效果。In addition to the grounding pin 14, the ground potential layer 14A includes a conductive member 16 and an impedance matching structure. In this embodiment, the conductive member 16 is exemplified by a copper foil, and the impedance matching structure is two metal wires 18, and each metal wire 18 is parallel to a corresponding signal pin 12. The conductive member 16 is disposed in an unfolded manner, and the grounding pin 14 and one end of each of the metal wires 18 are respectively disposed on the surface of the conductive member 16, thereby achieving electrical connection; and for each of the metal wires 18, The signal pin 12 is disposed in proximity to but not in contact with the corresponding signal pin 12, which not only ensures electrical isolation between the signal pin 12 and the metal wire 18, but also causes the signal pin 12 to be good because the metal wire 18 is connected to the ground potential. Impedance matching effect.
又，於兩兩相鄰的金屬線18與訊號針12之外側加設一絕緣套筒20，可維持訊號針12與金屬線18之間的間距。Moreover, an insulating sleeve 20 is disposed on the outer side of the two adjacent metal wires 18 and the signal pin 12 to maintain the spacing between the signal pin 12 and the metal wire 18.
由於該高頻探針卡100對用於傳輸高頻訊號的訊號針層12A，及將包含有作為阻抗匹配用的金屬線18之接地電位層14A，採分層製作，因巧妙運用空間，使得各訊號針12之間的距離得在不彼此干涉的情況下，更為緊密靠近以適用於待測物排列更為緊密的場合中進行量測使用。Since the high-frequency probe card 100 pairs the signal pin layer 12A for transmitting the high-frequency signal and the ground potential layer 14A including the metal wire 18 for impedance matching, the layer is made by layering, so that the space is skillfully utilized. The distance between the signal pins 12 can be measured in a close proximity to each other in a case where the objects to be tested are arranged more closely without being interfered with each other.
本實施例透過阻抗匹配結構的設置，而有效地控制高頻探針卡100、測試儀器及待測物之間的阻抗匹配效果，以及在各訊號針12表面具有該高導電率層122的情況下，更強化了傳導高頻訊號的能力與傳輸品質，使得該高頻探針卡100於量測時可提高量測結果的精準度。請配合圖5所示，為可說明本實施例之訊號針12具有良好電性傳導能力之一頻率(freq,)與能量損耗(即衰減值(dB))的比較圖，其中，上方粗黑線為該訊號針12的量測結果，下方細線則為一般以錸鎢針作為訊號針的量測結果，茲以頻率在2.5 GHz的情況為例，可發現代表該訊號針12的m1點所對應的衰減值(dB)在4.6左右，而代表錸鎢針的m2點所對應的衰減值(dB)則是在7.1左右，該二數據之間的顯著落差，即說明了本實施例表面塗佈有以銀材料構成高導電率層122的訊號針12，確實大幅提升了高頻訊號的電性傳導能力。In this embodiment, the impedance matching effect between the high-frequency probe card 100, the test instrument, and the object to be tested is effectively controlled by the setting of the impedance matching structure, and the high conductivity layer 122 is present on the surface of each of the signal pins 12. In addition, the ability to transmit high-frequency signals and the transmission quality are enhanced, so that the high-frequency probe card 100 can improve the accuracy of the measurement results when measuring. Please refer to FIG. 5, which is a comparison diagram of a frequency (freq) and an energy loss (ie, attenuation value (dB)) of the signal pin 12 of the present embodiment having good electrical conductivity. The line is the measurement result of the signal pin 12, and the lower line is the measurement result of the general use of the 铼 tungsten needle as the signal pin. For example, the case of the frequency at 2.5 GHz can be found to represent the m1 point of the signal pin 12. The corresponding attenuation value (dB) is about 4.6, and the attenuation value (dB) corresponding to the m2 point representing the 铼 tungsten needle is about 7.1. The significant difference between the two data indicates the surface coating of this embodiment. The signal pin 12, which is made of a silver material and has a high conductivity layer 122, greatly enhances the electrical conductivity of the high frequency signal.
再說明的是，本發明用以產生阻抗匹配效果的結構除了上述圖3所示之接地針14、導電件16及金屬線18的組合之外，尚可有以下之結構變化，其中：圖6所示之第二較佳實施例的阻抗匹配結構亦是與該訊號針12平行設置，其包括有一金屬線30與一絕緣層32，該金屬線30為該絕緣層32所包覆，而與該訊號針12保持電性隔離狀態。It should be noted that, in addition to the combination of the grounding pin 14, the conductive member 16 and the metal wire 18 shown in FIG. 3, the structure for generating the impedance matching effect of the present invention may have the following structural changes, wherein: FIG. 6 The impedance matching structure of the second preferred embodiment is also disposed in parallel with the signal pin 12, and includes a metal wire 30 and an insulating layer 32. The metal wire 30 is covered by the insulating layer 32, and The signal pin 12 remains electrically isolated.
圖7所示之第三較佳實施例的阻抗匹配結構則為一金屬套管40，該金屬套管40包括有一絕緣內層42與一金屬表層44，其中，該訊號針12是穿過該絕緣內層42，換言之，金屬套管40是與訊號針12呈同軸設置。The impedance matching structure of the third preferred embodiment shown in FIG. 7 is a metal sleeve 40. The metal sleeve 40 includes an insulating inner layer 42 and a metal surface layer 44, wherein the signal pin 12 passes through the The insulating inner layer 42, in other words, the metal sleeve 40 is disposed coaxially with the signal pin 12.
另說明的是，訊號針層及接地電位層的層數不以上述為限，其等得視需求而予以適當地增減，以達符合實際使用需求為止。以上所述僅為本發明較佳可行實施例而已，舉凡應用本發明說明書及申請專利範圍所為之等效結構變化，理應包含在本發明之專利範圍內。It should be noted that the number of layers of the signal pin layer and the ground potential layer is not limited to the above, and may be appropriately increased or decreased according to requirements to meet the actual use requirements. The above is only a preferred embodiment of the present invention, and equivalent structural changes to the scope of the present invention and the scope of the claims are intended to be included in the scope of the present invention.
100‧‧‧高頻探針卡100‧‧‧High frequency probe card
10‧‧‧電路板10‧‧‧ boards
10a‧‧‧訊號接點10a‧‧‧ Signal contacts
10b‧‧‧接地接點10b‧‧‧ Grounding contacts
12A‧‧‧訊號針層12A‧‧‧ Signal Layer
12‧‧‧訊號針12‧‧‧Signal needle
121‧‧‧探針本體121‧‧‧ probe body
121a‧‧‧針尖121a‧‧‧ needle tip
121b‧‧‧針身121b‧‧‧ needle body
121c‧‧‧針尾121c‧‧‧needle tail
122‧‧‧高導電率層122‧‧‧High conductivity layer
14A‧‧‧接地電位層14A‧‧‧ Ground potential layer
14‧‧‧接地針14‧‧‧ Grounding pin
16‧‧‧導電件16‧‧‧Electrical parts
18‧‧‧金屬線18‧‧‧Metal wire
20‧‧‧絕緣套筒20‧‧‧Insulation sleeve
30‧‧‧金屬線30‧‧‧Metal wire
32‧‧‧絕緣層32‧‧‧Insulation
40‧‧‧金屬套管40‧‧‧Metal casing
42‧‧‧絕緣內層42‧‧‧Insulated inner layer
44‧‧‧金屬表層44‧‧‧Metal surface
圖1為一剖視圖，揭示本發明第一較佳實施例之高頻探針卡；1 is a cross-sectional view showing a high frequency probe card according to a first preferred embodiment of the present invention;
圖2為一俯視圖，揭示上述較佳實施例之高頻探針卡；2 is a top plan view showing the high frequency probe card of the above preferred embodiment;
圖3為圖2之3-3方向剖視圖；Figure 3 is a cross-sectional view taken along line 3-3 of Figure 2;
圖4為圖2之4-4方向剖視圖；Figure 4 is a cross-sectional view taken along line 4-4 of Figure 2;
圖5為一比較圖，說明本發明之訊號針與一般錸鎢針的能量損耗狀況；Figure 5 is a comparative diagram illustrating the energy loss of the signal pin of the present invention and a general xenon tungsten needle;
圖6為一剖視圖，說明本發明第二較佳實施例之阻抗匹配結構與訊號針的關係；以及Figure 6 is a cross-sectional view showing the relationship between the impedance matching structure and the signal pin of the second preferred embodiment of the present invention;
圖7為一剖視圖，說明本發明第三較佳實施例之阻抗匹配結構與訊號針的關係。Figure 7 is a cross-sectional view showing the relationship between the impedance matching structure and the signal pin of the third preferred embodiment of the present invention.
100‧‧‧高頻探針卡100‧‧‧High frequency probe card
10‧‧‧電路板10‧‧‧ boards
10a‧‧‧訊號接點10a‧‧‧ Signal contacts
10b‧‧‧接地接點10b‧‧‧ Grounding contacts
12‧‧‧訊號針12‧‧‧Signal needle
121‧‧‧探針本體121‧‧‧ probe body
121a‧‧‧針尖121a‧‧‧ needle tip
121b‧‧‧針身121b‧‧‧ needle body
121c‧‧‧針尾121c‧‧‧needle tail
122‧‧‧高導電率層122‧‧‧High conductivity layer
14‧‧‧接地針14‧‧‧ Grounding pin
16‧‧‧導電件16‧‧‧Electrical parts
18‧‧‧金屬線18‧‧‧Metal wire
20‧‧‧絕緣套筒20‧‧‧Insulation sleeve
Claims (4)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101109548A TWI444625B (en) | 2012-03-20 | 2012-03-20 | High frequency probe card |
| CN201210102329XA CN103323634A (en) | 2012-03-20 | 2012-04-10 | High-frequency probe and probe card thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101109548A TWI444625B (en) | 2012-03-20 | 2012-03-20 | High frequency probe card |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201339584A TW201339584A (en) | 2013-10-01 |
| TWI444625B true TWI444625B (en) | 2014-07-11 |
Family
ID=49192503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101109548A TWI444625B (en) | 2012-03-20 | 2012-03-20 | High frequency probe card |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103323634A (en) |
| TW (1) | TWI444625B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI506280B (en) * | 2013-12-13 | 2015-11-01 | Mpi Corp | Probe module (2) |
| TW201546462A (en) * | 2014-06-09 | 2015-12-16 | Jthink Technology Ltd | Semiconductor testing carrier with characteristics matching function |
| TWI595237B (en) * | 2016-09-07 | 2017-08-11 | 美亞國際電子有限公司 | Test circuit board and method for operating the same |
| CN106645809A (en) * | 2016-10-14 | 2017-05-10 | 厦门大学 | Preparation method for isolated needle point with housing layers wrapped in dual manner |
| TWI652482B (en) * | 2017-04-25 | 2019-03-01 | 旺矽科技股份有限公司 | Probe module and probe card |
| TWI642941B (en) * | 2017-05-08 | 2018-12-01 | 旺矽科技股份有限公司 | Probe card |
| KR101962702B1 (en) * | 2017-06-28 | 2019-03-27 | 주식회사 아이에스시 | Probe member for pogo pin, the method of manufacturing the same, pogo pin comprising the same |
| CN111721978B (en) * | 2019-03-18 | 2023-09-08 | 旺矽科技股份有限公司 | Probe card |
| TW202035995A (en) * | 2019-03-18 | 2020-10-01 | 旺矽科技股份有限公司 | Probe device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6242930B1 (en) * | 1997-11-21 | 2001-06-05 | Nec Corporation | High-frequency probe capable of adjusting characteristic impedance in end part and having the end part detachable |
| JP4382593B2 (en) * | 2004-06-29 | 2009-12-16 | 山一電機株式会社 | Probe unit and manufacturing method thereof |
| CN100507574C (en) * | 2005-11-22 | 2009-07-01 | 旺矽科技股份有限公司 | Probe card capable of transmitting differential signal pairs |
| TW200829922A (en) * | 2007-01-08 | 2008-07-16 | Microelectonics Technology Inc | High frequency probe |
| US7724009B2 (en) * | 2007-02-09 | 2010-05-25 | Mpi Corporation | Method of making high-frequency probe, probe card using the high-frequency probe |
-
2012
- 2012-03-20 TW TW101109548A patent/TWI444625B/en not_active IP Right Cessation
- 2012-04-10 CN CN201210102329XA patent/CN103323634A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN103323634A (en) | 2013-09-25 |
| TW201339584A (en) | 2013-10-01 |
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