TWI440079B - Temperature control method and processing device of the temperature control device and the stage of the stage and the temperature control program of the stage - Google Patents

Temperature control method and processing device of the temperature control device and the stage of the stage and the temperature control program of the stage Download PDF

Info

Publication number
TWI440079B
TWI440079B TW095111616A TW95111616A TWI440079B TW I440079 B TWI440079 B TW I440079B TW 095111616 A TW095111616 A TW 095111616A TW 95111616 A TW95111616 A TW 95111616A TW I440079 B TWI440079 B TW I440079B
Authority
TW
Taiwan
Prior art keywords
refrigerant
temperature
temperature control
mounting table
stage
Prior art date
Application number
TW095111616A
Other languages
Chinese (zh)
Other versions
TW200703489A (en
Inventor
Masahide Iwasaki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200703489A publication Critical patent/TW200703489A/en
Application granted granted Critical
Publication of TWI440079B publication Critical patent/TWI440079B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Description

載置台的溫度控制裝置及載置台的溫度控制方法及處理裝置及載置台溫度控制程式Temperature control device for mounting table, temperature control method and processing device for mounting table, and stage temperature control program

本發明是關於控制載置被處理體的溫度的技術，尤其是關於將載置台上的溫度或溫度分布可作成各種選擇或可加以控制的載置台溫度控制方法及裝置，以及使用它的處理裝置。The present invention relates to a technique for controlling the temperature at which a target object is placed, and more particularly to a stage temperature control method and apparatus for making various options or controllable temperature or temperature distribution on a mounting table, and a processing apparatus using the same .

例如，在使用電漿的半導體基板或液晶面板的微細加工中，被處理基板的溫度分布，基板上的電漿密度分布，及反應生成物的分布等的控制極重要。若未適當地進行控制此些分布，則無法確保基板表面的處理均勻性，而降低半導體元件或顯示元件的製造良率。For example, in the microfabrication of a semiconductor substrate or a liquid crystal panel using plasma, it is extremely important to control the temperature distribution of the substrate to be processed, the plasma density distribution on the substrate, and the distribution of the reaction product. If such a distribution is not properly controlled, the processing uniformity of the substrate surface cannot be ensured, and the manufacturing yield of the semiconductor element or the display element can be lowered.

一般，在電漿處理裝置的室內載置被處理基板的載置台或支持台是具有：將高頻施加於電漿空間的高頻電極的功能，及以靜電吸附等保持基板的保持部的功能，及將基板以傳熱控制成所定溫度的熱板功能。有關於熱板功能，期望能適當地修正來自電漿或室壁的輻射熱的不均勻性所造成對於基板的入熱特性分布，或基板支持構造所造成的熱分布。In general, the mounting table or the support table on which the substrate to be processed is placed in the plasma processing apparatus has a function of applying a high frequency to the high frequency electrode of the plasma space, and a function of holding the holding portion of the substrate by electrostatic adsorption or the like. And a hot plate function for controlling the substrate to a predetermined temperature by heat transfer. Regarding the function of the hot plate, it is desirable to appropriately correct the heat distribution characteristic of the substrate caused by the unevenness of the radiant heat from the plasma or the chamber wall, or the heat distribution caused by the substrate supporting structure.

以往為了控制此種載置台的溫度，大都使用於載置台內部設置流著冷媒流路或通路，而將藉由冷卻裝置經調整溫度的冷媒循環供給於載置台內部的冷媒通路的方法。大體上，冷卻裝置是配置於與設有處理裝置的潔淨室不相同的使用室之故，因而連接冷卻裝置與室內的載置台的配管長度至少有數公尺以上，而超過10公尺者亦不稀奇。Conventionally, in order to control the temperature of such a mounting table, a refrigerant flow path or a passage through the inside of the mounting table is provided, and a refrigerant that has been adjusted in temperature by the cooling device is circulated and supplied to the refrigerant passage inside the mounting table. In general, since the cooling device is disposed in a different use room than the clean room in which the processing device is provided, the length of the pipe connecting the cooling device to the mounting table in the room is at least several meters, and those exceeding 10 meters are not. Rare.

最近，隨著電漿處理的加工微細化或多樣化，於載置台的溫度分布上成為被要求各種各樣的輪廓。尤其是，為了得到基板上的處理的面內均勻性的觀點上，幾乎均為要求在載置台的中心部與周邊部之間控制溫度的適當平衡的應用。作為用以因應此種要求的先前技術，眾如有於載置台的中心部與周邊部設置分別獨立的冷媒流路，藉由兩台冷卻裝置分別個別地調整溫度的冷媒循環供給於兩冷媒流路，而作成能分別個別地控制溫度載置台的中心部與周邊部的手法(例如參照專利文獻1)。Recently, as the processing of plasma processing is refined or diversified, various contours are required for the temperature distribution of the mounting table. In particular, in order to obtain the in-plane uniformity of the processing on the substrate, it is almost always required to control the temperature to be appropriately balanced between the center portion and the peripheral portion of the mounting table. As a prior art for responding to such a request, it is preferable to provide separate refrigerant flow paths at the center portion and the peripheral portion of the mounting table, and to separately supply the refrigerant circulating temperature to the two refrigerant flows by the two cooling devices. In the meantime, it is possible to individually control the center portion and the peripheral portion of the temperature mounting table (see, for example, Patent Document 1).

專利文獻1：日本特開平06－37056號公報Patent Document 1: Japanese Laid-Open Patent Publication No. 06-37056

然而，如上述的以往技術，不但有兩台冷卻裝置所需要所造成的成本或空間效率上的不利處，還有控制溫度的應答性不好的問題。亦即，因冷卻裝置本體的熱容量極大，因此很難急速地變更冷媒溫度，還有一直到載置台的配管(流路)如上述地相當長之故，因而無法實現高速昇降溫度。在最近的處理例如電漿蝕刻的領域上，被要求代替以往的多室方式而在單一室內連續加工被處理基板上的多層膜的方式。為了實現該單室方式，成為必須在被加工膜變更處短時間地變化基板溫度的技術，亦即必須作成載置台的高速昇降溫度的技術。However, according to the above-described prior art, there is a problem in that cost and space efficiency are required for the two cooling devices, and there is a problem that the responsiveness of the temperature control is not good. In other words, since the heat capacity of the main body of the cooling device is extremely large, it is difficult to rapidly change the temperature of the refrigerant, and the piping (flow path) up to the mounting table is considerably longer as described above, so that the high-speed rising and lowering temperature cannot be realized. In the field of recent processing such as plasma etching, it is required to continuously process a multilayer film on a substrate to be processed in a single chamber instead of the conventional multi-chamber method. In order to realize the single-chamber method, it is necessary to change the temperature of the substrate in a short time at the position where the film to be processed is changed, that is, it is necessary to prepare a high-speed temperature of the mounting table.

又，也考慮將加熱器或電熱元件等的發熱體內設於載置台來控制載置台上的溫度分布的方法。然而，該方法會導致增加運轉成本，或對高頻電極功能的影響，以及載置台內部構造的煩雜化者，而沒有實用性。Further, a method of controlling the temperature distribution on the mounting table by setting a heat generating body such as a heater or a heating element to the mounting table is also considered. However, this method leads to an increase in running cost, or an influence on the function of the high-frequency electrode, and an cumbersome internal structure of the mounting table, and is not practical.

本發明是鑑於如上述的以往技術的問題點乃至課題而創作者，其目的是在於提供以較小規模且簡單構成將載置台的溫度或溫度分布作成多種多樣或高精度地控制，又可作成載置台的高速昇降溫度的高實用性的載置台溫度控制裝置、載置台溫度控制方法及載置台溫度控制程式。The present invention has been made in view of the problems and problems of the prior art described above, and an object of the present invention is to provide a temperature or temperature distribution of a mounting table that can be controlled with various scales or with high precision on a small scale and in a simple configuration, and can be made. A highly practical stage temperature control device, a stage temperature control method, and a stage temperature control program for the high-speed lifting temperature of the mounting table.

本發明的其他目的，是在於提供經載置台的溫度控制而提高對於被處理體的處理均勻性或多樣性的處理裝置。Another object of the present invention is to provide a processing apparatus which improves the uniformity or diversity of processing for a target object by temperature control of the mounting table.

為了達成上述目的，本發明的載置台溫度控制裝置，屬於用以控制載置被處理體的載置台溫度的載置台溫度控制裝置，其特徵為具有：具有設置於上述載置台的各該個別入口及出口的第一及第二冷媒通路；為了將冷媒循環供給於上述第一及第二冷媒通路，具有：於上述第一冷媒流路的入口經由第一流路被連接的送出口，及於上述第二冷媒流路的出口經由第二流路被連接的反饋口，將反饋於上述反饋口的冷媒恢復成基準溫度而由上述送出口送出的冷媒循環器；在上述第一流路途中，將冷媒溫度從上述基準溫度上昇或下降至所期望的設定溫度的冷媒溫度控制部；具有：於上述第一冷媒通路出口經由第三流路被連接的第一埠，及於設置於比上述第一流路的上述冷媒溫度控制部還上游側的第一流路分岐點經由第四流路被連接的第二埠，及於上述第二冷媒通路入口經由第五流路被連接的第三埠，及於設置於上述第二流路的第二流路分岐點經由第六流路被連接的第四埠，在上述第一、第二、第三及第四埠之間可執行流路的導通．斷開及變更的流路轉換部；以及控制上述流路轉換部內的上述流路的導通．斷開或變更的流路控制部。In order to achieve the above object, the stage temperature control device of the present invention belongs to a stage temperature control device for controlling the temperature of the stage on which the object to be processed is placed, and has a display of each of the individual inlets provided on the stage. And the first and second refrigerant passages of the outlet; and the supply of the refrigerant to the first and second refrigerant passages, wherein the inlet of the first refrigerant passage is connected via the first passage, and a refrigerant circulator that is sent to the outlet of the second refrigerant flow path via a feedback port that is connected to the second flow path, and that restores the refrigerant fed back to the feedback port to a reference temperature and is sent by the delivery port; and the refrigerant is supplied to the first flow path a refrigerant temperature control unit that rises or falls from the reference temperature to a desired set temperature; has a first port connected to the first refrigerant passage outlet via a third flow path, and is disposed at the first flow path The refrigerant temperature control unit further includes a second port connected to the first channel at the upstream side via the fourth channel, and a second port connected to the second device a third port connected to the inlet via the fifth flow path, and a fourth port connected to the second flow path branch point of the second flow path via the sixth flow path, in the first, second, and The conduction of the flow path between the third and fourth turns can be performed. a flow path conversion unit that is disconnected and changed; and controls conduction of the flow path in the flow path conversion unit. Disconnected or changed flow path control unit.

在上述構成中，組合著藉由冷媒循環器將被循環供給於第一及第二冷媒通路的冷媒溫度控制在基準溫度的功能，及藉由設在第一流路途中的冷媒溫度控制部將冷媒由基準溫度施以昇溫或降溫的功能，及藉由流路切換部轉換對於冷媒循環器的第一及第二冷媒通路的連接關係的功能，可將分別供給於第一及第二冷媒通路的冷媒溫度施以各種選擇，而可多樣且精細地控制載置台的溫度或溫度分布。又，冷媒循環器是一台就夠。In the above configuration, the function of controlling the temperature of the refrigerant circulated and supplied to the first and second refrigerant passages to the reference temperature by the refrigerant circulator, and the refrigerant temperature control unit provided in the middle of the first flow path are combined with the refrigerant. The function of increasing or decreasing the temperature by the reference temperature and the function of switching the connection relationship between the first and second refrigerant passages of the refrigerant circulator by the flow path switching unit are respectively supplied to the first and second refrigerant passages. The refrigerant temperature is varied in various ways, and the temperature or temperature distribution of the stage can be controlled variously and finely. Also, a refrigerant circulator is enough.

依照本發明的最佳形態，流路轉換部具有：被連接於上述第一埠與上述第三埠之間的第一開關閥，及被連接於上述第一埠與上述第四埠之間的第二開關閥，及被連接於上述第二埠與上述第三埠之間的第三開關閥，及被連接於上述第二埠與上述第四埠之間的第四開關閥；上述流路控制部控制上述第一、 第二、 第三及第四開關閥的導通．斷開。在該構成中，各開關閥之導通．斷開是獨立地進行也可以，或是和其他的開關閥相互補助進行亦可。作為一例，可將第1及第3之開關閥以常開閥構成，而將第2及第4之開關閥以常閉閥構成。或是流路轉換部具有：被連接於上述第一埠與上述第三及第四埠之間的第一方向轉換閥，及被連接於第二埠與第三及第四埠之間的第二方向轉換閥；流路控制部控制第一及第二方向轉換閥內的各該流路狀態的構成也可以。According to a preferred mode of the present invention, the flow path conversion unit includes: a first switching valve connected between the first turn and the third turn, and a first switch connected between the first turn and the fourth turn a second switching valve, and a third switching valve connected between the second crucible and the third crucible, and a fourth switching valve connected between the second crucible and the fourth crucible; the flow path The control unit controls the conduction of the first , second , third and fourth switching valves. disconnect. In this configuration, each switching valve is turned on. The disconnection may be performed independently or in combination with other on-off valves. As an example, the first and third switching valves may be configured as a normally open valve, and the second and fourth switching valves may be configured as a normally closed valve. Or the flow path conversion unit includes: a first direction switching valve connected between the first port and the third and fourth ports; and a second connection between the second port and the third and fourth ports The two-way switching valve; the flow path control unit may control the configuration of each of the flow path states in the first and second direction switching valves.

又，依照最適當的一形態，冷媒溫度控制部具有：安裝於第一流路的線內加熱器；在比線內加熱器還下游側檢測第一流路內的冷媒溫度的溫度感測器；以及控制線內加熱器的發熱量成為使得藉由溫度感測器所檢測的冷媒溫度一致於設定溫度的溫度的溫度控制部。依照該構成，以省空間有效率地進行對於流在第一流路的冷媒的加熱或吸熱，而可充分地發揮急速昇降溫度。又，為了提高急速昇降溫度的效果，線內加熱器在接近於載置台的位置來加熱第一流路內的冷媒較理想。Further, according to a most preferable aspect, the refrigerant temperature control unit includes: an in-line heater attached to the first flow path; and a temperature sensor that detects a temperature of the refrigerant in the first flow path on a downstream side of the in-line heater; The amount of heat generated by the heater in the control line is a temperature control unit that causes the temperature of the refrigerant detected by the temperature sensor to match the temperature of the set temperature. According to this configuration, the heating or the heat absorption of the refrigerant flowing through the first flow path can be efficiently performed in a space-saving manner, and the rapid rise and fall temperature can be sufficiently exhibited. Further, in order to increase the effect of the rapid rise and fall temperature, it is preferable that the in-line heater heats the refrigerant in the first flow path at a position close to the mounting table.

又，依照最佳一形態，於第一配管的第一流路分岐點還下游側設有用以可變控制冷媒流量的流量控制閥。該流量控制閥，是例如手動操作式或機械操作式的可動節流閥。一般欲將對於流在配管的冷媒的加熱量或吸熱量保持在一定時，則流量與冷媒昇降溫度是在定性上具有反比例關係，愈縮小流量，則愈增大冷媒溫度的昇降溫度。藉由此，組合基於流量控制閥的冷媒流量控制及基於加熱部或吸熱部的加熱或吸熱控制，則可將冷媒溫度從基準溫度高速且正確地上昇或下降至所期望的設定值。Further, according to the preferred aspect, a flow rate control valve for variably controlling the flow rate of the refrigerant is provided on the downstream side of the first flow path branching point of the first pipe. The flow control valve is, for example, a manually operated or mechanically operated movable throttle. Generally, it is desirable to maintain the heating amount or the heat absorption amount of the refrigerant flowing in the pipe at a timing, and the flow rate and the refrigerant temperature rise and fall are qualitatively inversely proportional, and the smaller the flow rate, the more the temperature of the refrigerant is raised and lowered. Thereby, by combining the refrigerant flow rate control based on the flow control valve and the heating or heat absorption control by the heating unit or the heat absorbing portion, the refrigerant temperature can be raised or lowered from the reference temperature at a high speed and correctly to a desired set value.

又，依照最適當的形態，上述第一冷媒通路與上述第二冷媒通路，是對於上述載置台的中心配置成同心圓狀， 最理想是第一冷媒通路設在載置台的中心部領域；第二冷媒通路設在載置台的周邊部領域。又，作為最適當的一形態，冷媒循環器具有：用以循環冷媒的泵，及用以冷凍剛反饋之後的冷媒的冷凍部，及將冷凍後的冷媒加熱至所定基準溫度的加熱部。Further, according to an optimum aspect, the first refrigerant passage and the second refrigerant passage are arranged concentrically with respect to a center of the mounting table. Preferably, the first refrigerant passage is provided in the center portion of the mounting table; and the second refrigerant passage is provided in the peripheral portion of the mounting table. Further, as a most appropriate aspect, the refrigerant circulator has a pump for circulating a refrigerant, a freezing portion for freezing the refrigerant immediately after the feedback, and a heating portion for heating the frozen refrigerant to a predetermined reference temperature.

本發明的第一載置台溫度控制方法，屬於藉由冷媒循環器將冷媒循環供給於設置在載置被處理體的載置台的第一及第二冷媒通路，並控制上述載置台的溫度的載置台溫度控制方法，其特徵為具有：在上述冷媒循環器的送出口與反饋口之間並聯地連接上述第一冷媒通路與上述第二冷媒通路，將由上述冷媒循環器以基準溫度所送出的冷媒中一部分由上述基準溫度上昇或下降至所期望的設定溫度之後，流進上述第一冷媒通路，並將剩餘之冷媒實質上仍以上述基準溫度流進上述第二冷媒通路而進行上述載置台的溫度控制的第一溫度控制模式。In the first stage temperature control method of the present invention, the refrigerant circulates the refrigerant to the first and second refrigerant passages provided on the mounting table on which the workpiece is placed, and controls the temperature of the mounting table. The stage temperature control method is characterized in that the first refrigerant passage and the second refrigerant passage are connected in parallel between a delivery port of the refrigerant circulator and a feedback port, and the refrigerant is delivered by the refrigerant circulator at a reference temperature. And a part of the reference temperature rises or falls to a desired set temperature, then flows into the first refrigerant passage, and the remaining refrigerant substantially flows into the second refrigerant passage at the reference temperature to perform the mounting stage. The first temperature control mode for temperature control.

依照該方法，使用一台冷媒循環器，則在第二冷媒通路可流著基準溫度的冷媒，而在第一冷媒通路可流著與基準溫度不相同的設定溫度，俾在載置台的溫度分布可帶來變化，而且，僅對於流在第一冷媒通路的份量的冷媒在剛實施之前施以加熱或冷卻就可以，因此加熱或冷卻效率高，也可施以急速昇溫或急速降溫。According to this method, when one refrigerant circulator is used, the refrigerant of the reference temperature can flow in the second refrigerant passage, and the set temperature at which the reference temperature is different can flow in the first refrigerant passage, and the temperature distribution of the crucible on the stage The change may be caused, and only the refrigerant flowing in the first refrigerant passage may be heated or cooled just before the execution, so that the heating or cooling efficiency is high, and rapid heating or rapid cooling may be applied.

依照本發明的一形態，又具有：在冷媒循環器的送出口與反饋口之間並聯地連接第一冷媒通路與第二冷媒通路，將由冷媒循環器所送出的冷媒中一部分實質上仍以基準溫度流進第一冷媒通路，並將剩餘之冷媒實質上仍以基準溫度流進第二冷媒通路而進行載置台的溫度控制的第二溫度控制模式；因應於被處理體的加工條件而在第一溫度控制模式與第二溫度控制模式之間進行轉換。According to an aspect of the present invention, the first refrigerant passage and the second refrigerant passage are connected in parallel between the delivery port of the refrigerant circulator and the feedback port, and a part of the refrigerant sent from the refrigerant circulator is substantially still referenced. a second temperature control mode in which the temperature flows into the first refrigerant passage and the remaining refrigerant substantially flows into the second refrigerant passage at the reference temperature to perform temperature control of the mounting table; A conversion between a temperature control mode and a second temperature control mode.

在上述第二溫度控制模式中，將來自冷媒循環器的冷媒仍以基準溫度都供給至第一及第二冷媒通路，而於載置台上可得到對應於基準溫度的大約平坦的溫度分布。在轉換模式中，可將載置台(或被處理體)的溫度或溫度分布比對應於第一溫度控制模式的第一穩定狀態與對應於第二溫度控制模式的第二穩定狀態之間急速昇溫或急速降溫以更短時間地移行。In the second temperature control mode, the refrigerant from the refrigerant circulator is supplied to the first and second refrigerant passages at the reference temperature, and an approximately flat temperature distribution corresponding to the reference temperature is obtained on the mounting table. In the conversion mode, the temperature or temperature distribution of the mounting table (or the processed body) may be rapidly increased between the first stable state corresponding to the first temperature control mode and the second stable state corresponding to the second temperature control mode. Or quickly cool down to move in less time.

又，依照最適當的一形態，又具有：在冷媒循環器的送出口與反饋口之間串聯地連接第一冷媒通路與第二冷媒通路，將冷媒循環器所送出的冷媒中一部分由基準溫度上昇或下降至所期望的設定溫度以後依序流進第一及第二冷媒通路，並將剩餘之冷媒予以旁通而進行上述載置台的溫度控制的第三溫度控制模式；因應於被處理體的加工條件而在第一溫度控制模式與第二溫度控制模式及第三溫度控制模式之間進行轉換。Further, according to a most preferable aspect, the first refrigerant passage and the second refrigerant passage are connected in series between the delivery port of the refrigerant circulator and the feedback port, and a part of the refrigerant sent from the refrigerant circulator is reference temperature a third temperature control mode that sequentially flows into the first and second refrigerant passages after rising or falling to a desired set temperature, and bypasses the remaining refrigerant to perform temperature control of the mounting table; The processing condition is switched between the first temperature control mode and the second temperature control mode and the third temperature control mode.

在上述第三溫度控制模式中，將與基準溫度不同的設定溫度的冷媒都供給至第一及第二冷媒通路，而於載置台上可得到對應於基準溫度的大約平坦的溫度分布。在轉換模式中，可將載置台(或被處理體)的溫度或溫度分布比對應於第一溫度控制模式的第一穩定狀態，及對應於第二溫度控制模式的第二穩定狀態，及對應於第三溫度控制模式的第三穩定狀態之間急速昇溫或急速降溫還以短時間地移行。尤其是，在轉換至第三溫度控制模式中，藉由旁通的作用，可高速且穩定地進行對於兩冷媒通路的冷媒供給流量的可變控制。In the third temperature control mode, the refrigerant having the set temperature different from the reference temperature is supplied to the first and second refrigerant passages, and an approximately flat temperature distribution corresponding to the reference temperature is obtained on the mounting table. In the conversion mode, the temperature or temperature distribution ratio of the mounting table (or the processed body) may correspond to the first stable state of the first temperature control mode, and the second stable state corresponding to the second temperature control mode, and corresponding The rapid temperature rise or the rapid temperature drop between the third steady state of the third temperature control mode also shifts in a short time. In particular, in the transition to the third temperature control mode, the variable control of the refrigerant supply flow rate of the two refrigerant passages can be performed at high speed and stably by the action of the bypass.

又，依照最適當的一形態，又具有：在冷媒循環器的送出口與反饋口之間串聯地連接第一冷媒通路與第二冷媒通路，將由冷媒循環器所送出的冷媒全部由基準溫度上昇或下降至所期望的設定溫度之後依序流進第一及第二冷媒通路而進行載置台的溫度控制的第四溫度控制模式；因應於被處理體的加工條件而在第一溫度控制模式與第二溫度控制模式及第四溫度控制模式之間進行轉換。Further, according to a most preferable aspect, the first refrigerant passage and the second refrigerant passage are connected in series between the delivery port of the refrigerant circulator and the feedback port, and all of the refrigerant sent from the refrigerant circulator is raised from the reference temperature. Or a fourth temperature control mode in which the first and second refrigerant passages are sequentially flowed down to the desired set temperature to perform temperature control of the mounting table; in the first temperature control mode in response to the processing conditions of the object to be processed The conversion between the second temperature control mode and the fourth temperature control mode is performed.

在上述第四溫度控制模式中，將與基準溫度不同的設定溫度的冷媒都供給至第一及第二冷媒通路，而於載置台上可得到對應於基準溫度的大約平坦的溫度分布。在轉換模式中，可將載置台(或被處理體)的溫度或溫度分布比對應於第一溫度控制模式的第一穩定狀態，及對應於第二溫度控制模式的第二穩定狀態，及對應於第四溫度控制模式的第四穩定狀態之間急速昇溫或急速降溫還以短時間地移行。In the fourth temperature control mode, the refrigerant having the set temperature different from the reference temperature is supplied to the first and second refrigerant passages, and an approximately flat temperature distribution corresponding to the reference temperature is obtained on the mounting table. In the conversion mode, the temperature or temperature distribution ratio of the mounting table (or the processed body) may correspond to the first stable state of the first temperature control mode, and the second stable state corresponding to the second temperature control mode, and corresponding The rapid temperature rise or the rapid temperature drop between the fourth steady state of the fourth temperature control mode also shifts in a short time.

又，依照最適當的一形態，又具有：在冷媒循環器的送出口與反饋口之間串聯地連接第一冷媒通路與第二冷媒通路，將由冷媒循環器所送出的冷媒一部份實質上仍以基準溫度依序流進第一及第二冷媒通路，並將剩餘之冷媒予以旁通而進行載置台的溫度控制的第五溫度控制模式；因應於被處理體的加工條件而在第一溫度控制模式與第三溫度控制模式或是第四溫度控制模式及第五溫度控制模式之間進行轉換。Further, according to the most appropriate aspect, the first refrigerant passage and the second refrigerant passage are connected in series between the delivery port of the refrigerant circulator and the feedback port, and the refrigerant sent from the refrigerant circulator is substantially a fifth temperature control mode in which the first and second refrigerant passages are sequentially flowed into the first and second refrigerant passages, and the remaining refrigerant is bypassed to control the temperature of the stage; the first condition is determined in accordance with the processing conditions of the object to be processed. The temperature control mode is switched between the third temperature control mode or the fourth temperature control mode and the fifth temperature control mode.

在上述第五溫度控制模式中，將來自冷媒循環器的冷媒仍以基準溫度都供給至第一及第二冷媒通路，而於載置台上可得到對應於基準溫度的大約平坦的溫度分布。又，藉由旁通的作用也可高速地可變控制冷媒的供給流量。在轉換模式中，可將載置台(或被處理體)的溫度或溫度分布比對應於第一溫度控制模式的第一穩定狀態，及對應於第三溫度控制模式的第三穩定狀態，及對應於第四溫度控制模式的第四穩定狀態，及對應於第五溫度控制模式的第五穩定狀態之間急速昇溫或急速降溫還以短時間地移行。In the fifth temperature control mode described above, the refrigerant from the refrigerant circulator is supplied to the first and second refrigerant passages at the reference temperature, and an approximately flat temperature distribution corresponding to the reference temperature is obtained on the mounting table. Further, the supply flow rate of the refrigerant can be variably controlled at a high speed by the action of the bypass. In the conversion mode, the temperature or temperature distribution ratio of the mounting table (or the processed body) may correspond to the first stable state of the first temperature control mode, and the third stable state corresponding to the third temperature control mode, and corresponding The rapid temperature rise or the rapid temperature drop between the fourth steady state of the fourth temperature control mode and the fifth steady state corresponding to the fifth temperature control mode also shifts in a short time.

又，依照最適當的一形態，又具有：在冷媒循環器的送出口與反饋口之間串聯地連接第一冷媒通路與第二冷媒通路，將由冷媒循環器所送出的冷媒全部實質上仍以基準溫度依序流進第一及第二冷媒通路而進行載置台的溫度控制的第六溫度控制模式；因應於被處理體的加工條件而在第一溫度控制模式與第三溫度控制模式或是第四溫度控制模式及第六溫度控制模式之間進行轉換。Further, according to the most appropriate aspect, the first refrigerant passage and the second refrigerant passage are connected in series between the delivery port of the refrigerant circulator and the feedback port, and the refrigerant sent from the refrigerant circulator is substantially still a sixth temperature control mode in which the reference temperature flows into the first and second refrigerant passages to perform temperature control of the mounting table; and in the first temperature control mode and the third temperature control mode depending on the processing conditions of the object to be processed The conversion between the fourth temperature control mode and the sixth temperature control mode is performed.

在上述第六溫度控制模式中，將來自冷媒循環器的冷媒仍以基準溫度都可供給至第一及第二冷媒通路，而於載置台上可得到對應於基準溫度的大約平坦的溫度分布。在轉換模式中，可將載置台(或被處理體)的溫度或溫度分布比對應於第一溫度控制模式的第一穩定狀態，及對應於第三溫度控制模式的第三穩定狀態，及對應於第四溫度控制模式的第四穩定狀態，及對應於第六溫度控制模式的第六穩定狀態之間急速昇溫或急速降溫還以短時間地移行。In the sixth temperature control mode described above, the refrigerant from the refrigerant circulator can be supplied to the first and second refrigerant passages at the reference temperature, and an approximately flat temperature distribution corresponding to the reference temperature can be obtained on the mounting table. In the conversion mode, the temperature or temperature distribution ratio of the mounting table (or the processed body) may correspond to the first stable state of the first temperature control mode, and the third stable state corresponding to the third temperature control mode, and corresponding The rapid temperature rise or the rapid temperature drop between the fourth steady state of the fourth temperature control mode and the sixth steady state corresponding to the sixth temperature control mode is also moved in a short time.

本發明的第二載置台溫度控制方法，屬於藉由冷媒循環器將冷媒循環供給於設置在載置被處理體的載置台的第一及第二冷媒通路並控制上述載置台的溫度的載置台溫度控制方法，其特徵為：在上述冷媒循環器的送出口與反饋口之間並聯地連接上述第一冷媒通路及上述第二冷媒通路，將上述冷媒循環器所送出的冷媒之中一部分由上述基準溫度上昇或下降至所期望的設定溫度後流進上述第一冷媒通路，並將剩餘之冷媒實質上以上述基準溫度流進上述第二冷媒通路而進行上述載置台的溫度控制之第一溫度控制模式；在上述冷媒循環器的送出口與反饋口之間並聯地連接上述第一冷媒通路及第二冷媒通路，將上述冷媒循環器所送出的冷媒之中一部分實質上以上述基準溫度流進上述第一冷媒通路，並將剩餘之冷媒實質上仍以上述基準溫度流進上述第二冷媒通路而進行上述載置台的溫度控制之第二溫度控制模式；在上述冷媒循環器的送出口與反饋口之間串聯地連接上述第一冷媒通路與上述第二冷媒通路，將上述冷媒循環器所送出的冷媒中一部分由上述基準溫度上昇或下降至所期望的設定溫度之後依序流進上述第一及第二冷媒通路，並將剩餘之冷媒予以旁通而進行上述載置台的溫度控制的第三溫度控制模式；在上述冷媒循環器的送出口與反饋口之間串聯地連接上述第一冷媒通路與上述第二冷媒通路，將由上述冷媒循環器所送出的冷媒中一部分實質上仍以上述基準溫度依序流進上述第一及第二冷媒通路，並將剩餘予以旁通而進行上述載置台的溫度控制的第五溫度控制模式；在上述第一模式，與上述第二、第三、第五模式的至少一種模式之間進行轉換。The second stage temperature control method according to the present invention is a stage in which a refrigerant is circulated by a refrigerant circulator to a first and second refrigerant passages provided on a stage on which a workpiece is placed, and the temperature of the stage is controlled. The temperature control method is characterized in that the first refrigerant passage and the second refrigerant passage are connected in parallel between a delivery port of the refrigerant circulator and a feedback port, and a part of the refrigerant sent from the refrigerant circulator is After the reference temperature rises or falls to a desired set temperature, the first refrigerant passage flows into the first refrigerant passage, and the remaining refrigerant flows into the second refrigerant passage substantially at the reference temperature to perform the first temperature control of the mounting table. a control mode; the first refrigerant passage and the second refrigerant passage are connected in parallel between the delivery port and the feedback port of the refrigerant circulator, and a part of the refrigerant sent from the refrigerant circulator flows substantially at the reference temperature The first refrigerant passage, and the remaining refrigerant substantially flows into the second refrigerant passage at the reference temperature a second temperature control mode for controlling the temperature of the mounting table; connecting the first refrigerant passage and the second refrigerant passage in series between the delivery port of the refrigerant circulator and the feedback port, and sending the refrigerant circulator a third temperature in which a portion of the refrigerant flows into the first and second refrigerant passages after the reference temperature rises or falls to a desired set temperature, and the remaining refrigerant is bypassed to perform temperature control of the mounting table. a control mode; the first refrigerant passage and the second refrigerant passage are connected in series between the delivery port of the refrigerant circulator and the feedback port, and a part of the refrigerant sent by the refrigerant circulator is substantially still at the reference temperature a fifth temperature control mode that flows into the first and second refrigerant passages and bypasses the remaining temperature control of the mounting table; and in the first mode, the second, third, and fifth modes Convert between at least one mode.

在該第二方法中，在由上述第二模式、第三模式及第五模式所構成的群所選擇的一或複數模式與上述第一模式之間進行轉換。在該第二方法，也與上述第一方法同樣地，於載置台的溫度分布也可具有多種多樣的變化，而且可容易地實現急速昇溫或急速降溫。In the second method, the conversion is performed between the one or plural mode selected by the group consisting of the second mode, the third mode, and the fifth mode, and the first mode. In the second method, similarly to the first method described above, the temperature distribution on the mounting table can be variously changed, and the rapid temperature increase or the rapid temperature drop can be easily realized.

本發明的處理裝置，其特徵為具有：可減壓之收容載置被處理體的載置台的室；基於本發明的載置台溫度控制裝置；用以排氣室內的排氣部；以及於上述室內供給處理氣體的處理氣體供給部。在該處理裝置的構成中，藉由本發明的載置台溫度控制裝置經由載置台，可多樣或高精度地控制被處理體的溫度乃至溫度分布。A processing apparatus according to the present invention includes: a chamber for accommodating a mounting table on which a target object is placed; a stage temperature control device according to the present invention; an exhaust unit for exhausting the chamber; A processing gas supply unit that supplies a processing gas indoors. In the configuration of the processing apparatus, the stage temperature control device of the present invention can control the temperature and temperature distribution of the object to be processed variously or with high precision via the mounting table.

在上述的處理裝置中，依照最適當的一形態，設有於室內用以生成或供給上述處理氣體的電漿的電漿源，或於載置台用以供電第一高頻率的第一高頻率供電部。又，設置在室內與載置台相對的相對電極，及於該相對電極用以供電第二高頻率的第二高頻率供電部的構成也可以。In the above processing apparatus, according to a most appropriate aspect, a plasma source for generating or supplying plasma of the processing gas in the chamber or a first high frequency for supplying the first high frequency to the mounting table is provided. Power supply department. Further, a counter electrode that faces the mounting table in the room and a second high-frequency power supply unit that supplies the second high frequency to the counter electrode may be provided.

又，依照最適當的一形態，於載置台設有：用以靜電吸附被處理體的靜電吸盤，及在被處理體的背面與載置面之間供給傳熱氣體的傳熱氣體供給路。Moreover, according to the most appropriate aspect, the mounting table is provided with an electrostatic chuck for electrostatically adsorbing the object to be processed, and a heat transfer gas supply path for supplying a heat transfer gas between the back surface of the object to be processed and the mounting surface.

又，作為最適當的一形態，上述處理裝置，是在對於被處理體開始所期望的電漿處理之前，藉由冷媒溫度控制部來加熱流在第一流路的冷媒而使被處理體的溫度上昇至處理用的設定處理溫度；從開始電漿處理一直到其以後也結束處理為止，藉由冷媒溫度控制部逐漸地減弱對於流在第一流路的冷媒之加熱，使上述被處理體的溫度實質上被保持在上述設定處理溫度。亦即，利用基於冷媒溫度控制部的高速昇降溫度功能，可修正基於來自電漿的入熱的被處理體溫度的變動(上昇)，可提高單張電漿處理的溫度管理、再現性、良率。Further, as a most appropriate aspect, the processing device heats the refrigerant flowing through the first flow path by the refrigerant temperature control unit before starting the desired plasma treatment on the object to be processed, thereby causing the temperature of the object to be processed. Increasing to the set processing temperature for processing; until the processing is completed from the start of the plasma processing until after, the refrigerant temperature control unit gradually weakens the heating of the refrigerant flowing through the first flow path to increase the temperature of the object to be processed It is substantially maintained at the above set processing temperature. In other words, by using the high-speed temperature rise and fall function of the refrigerant temperature control unit, it is possible to correct the fluctuation (rise) of the temperature of the object to be processed based on the heat from the plasma, and it is possible to improve the temperature management, reproducibility, and goodness of the single plasma treatment. rate.

又，在本發明中，由冷媒循環器被送出的冷媒的基準溫度是並不一定嚴密地成為一定，也不一定為一個溫度值，具有某種程度的變動幅或範圍者也可以。Further, in the present invention, the reference temperature of the refrigerant sent from the refrigerant circulator is not necessarily strictly constant, and may not necessarily be one temperature value, and may have a certain degree of variation or range.

依照本發明的載置台溫度控制裝置，載置台溫度控制方法或載置台溫度控制程式，藉由如上述的構成與作用，以高實用性，較小規模且簡單構成即可將載置台的溫度分布作成多種多樣或高精度地控制，載置台的溫度或高速昇降溫度。又，依照本發明的處理裝置，藉由如上述構成與作用，經載置台的溫度控制可提高對於被處理體的處理體的處理均勻性或多樣性。According to the stage temperature control device, the stage temperature control method, or the stage temperature control program of the present invention, the temperature distribution of the stage can be set with a small scale and a simple configuration with high practicability by the above-described configuration and action. The temperature of the stage or the high-speed rise and fall temperature is controlled by various types or with high precision. Moreover, according to the processing apparatus of the present invention, by the above-described configuration and action, the processing uniformity or diversity of the processed body of the object to be processed can be improved by the temperature control of the mounting table.

以下，參照所附圖式說明本發明最適當實施形態。Hereinafter, the most appropriate embodiment of the present invention will be described with reference to the accompanying drawings.

(實施例1)(Example 1)

在第1圖表示本發明的一實施形態的載置台溫度控制裝置的構成。該載置台溫度控制裝置是典型上以控制在可減壓的室10內受到處理的被處理基板例如半導體晶圓W的溫度或溫度分布作為最終目的，控制載置半導體晶圓W的載置台12的溫度或溫度分布的裝置，作為其基本構成，具有：載置台12內部的冷媒通路、冷卻單元14、加熱單元16、流路轉換單元18、配管類(26、28、30、32、58、60等)及控制器20。Fig. 1 shows the configuration of a stage temperature control device according to an embodiment of the present invention. The stage temperature control device typically controls the stage on which the semiconductor wafer W is placed, by controlling the temperature or temperature distribution of the substrate to be processed, such as the semiconductor wafer W, which is processed in the decompressible chamber 10 as a final purpose. The device having a temperature or a temperature distribution includes a refrigerant passage inside the mounting table 12, a cooling unit 14, a heating unit 16, a flow path conversion unit 18, and piping (26, 28, 30, 32, 58, 60, etc.) and controller 20.

在載置台12的內部，設有複數系統例如2系統的流動冷媒的通路。在典型式，分別具有個別的入口與出口的冷媒通路22、24設在包含載置台12中心的中心部領域與包含邊緣的周邊部領域。此些的冷媒通路22、24，是形成如同心圓狀或螺旋狀地形成，使冷媒溫度普遍地可傳輸至各該領域。中心部領域的冷媒通路22是於螺旋的中心部具有入口22a，而於螺旋的外周部具有22b的構成較理想。Inside the mounting table 12, a passage of a plurality of systems such as two systems of flowing refrigerant is provided. In the typical embodiment, the refrigerant passages 22, 24 having the respective inlets and outlets are provided in the field of the central portion including the center of the mounting table 12 and the peripheral portion including the edge. The refrigerant passages 22, 24 are formed in a heart-like or spiral shape so that the temperature of the refrigerant can be generally transmitted to each of the fields. The refrigerant passage 22 in the center portion is preferably provided with an inlet 22a at the center portion of the spiral and 22b at the outer peripheral portion of the spiral.

冷媒通路22的入口22a是經由配管26被連接於冷卻單元14之送出口14a，而冷媒通路22的出口22b經由配管28被連接於流路轉換單元18的埠(第一入口)18a。另一方面，冷媒通路24的入口24a是經由配管30被連接於流路轉換單元18的埠(第一出口)18c，而冷媒通路24的出口24b是經由配管32被連接於冷卻單元14的反饋口14b。The inlet 22a of the refrigerant passage 22 is connected to the delivery port 14a of the cooling unit 14 via the pipe 26, and the outlet 22b of the refrigerant passage 22 is connected to the crucible (first inlet) 18a of the flow path conversion unit 18 via the pipe 28. On the other hand, the inlet 24a of the refrigerant passage 24 is connected to the crucible (first outlet) 18c of the flow path conversion unit 18 via the pipe 30, and the outlet 24b of the refrigerant passage 24 is connected to the cooling unit 14 via the piping 32. Port 14b.

冷卻單元14是具有將冷媒循環供給於載置台12的兩冷媒通路22、24的功能，例如具備：用以循環冷媒的泵34，及用以冷凍剛反饋至反饋口14b之後的冷媒的冷凍機36，及將冷凍後的冷媒加熱成恢復至所定基準溫度的加熱機38(第5圖)。一般，冷卻單元14是設置在距載置台12較遠場所，連結兩者的配管26、32也成為相當長者(例如5m以上)。冷卻單元14內的各部動作及單元整體的冷媒循環供給動作是藉由控制器20被控制。The cooling unit 14 has a function of circulating the refrigerant to the two refrigerant passages 22 and 24 of the mounting table 12, and includes, for example, a pump 34 for circulating the refrigerant, and a refrigerator for freezing the refrigerant immediately after being fed back to the feedback port 14b. 36, and heating the frozen refrigerant to a heater 38 (Fig. 5) that returns to a predetermined reference temperature. Generally, the cooling unit 14 is provided at a place far from the mounting table 12, and the pipes 26 and 32 that connect the two are also relatively long (for example, 5 m or more). The operation of each unit in the cooling unit 14 and the refrigerant circulation supply operation of the entire unit are controlled by the controller 20.

又，由冷媒循環器所送出的冷媒基準溫度是並不一定被嚴密地限定在一定，也不是被保持在一個溫度值，通常在容許範圍內具有某一程度的變動寬度(例如5℃)。Further, the refrigerant reference temperature sent from the refrigerant circulator is not necessarily strictly limited, and is not maintained at a single temperature value, and generally has a certain variation width (for example, 5 ° C) within the allowable range.

加熱單元16是具有在配管26的途中加熱冷媒而將冷媒溫度由基準溫度上昇至所期望的設定溫度的冷媒昇溫功能，具備：在儘可能接近於載置台12的位置被安裝於配管26的線內加熱器40，及將電力供給於該線內加熱器40之電源42。線內加熱器40是不但具有高速昇溫功能者較理想，而且具有耐於由冷卻單元14長距離地被壓送配管26內的冷媒壓力的物理性強度者較理想，例如第2圖所示地，感應加熱方式的加熱器較理想。The heating unit 16 has a refrigerant heating function that heats the refrigerant in the middle of the pipe 26 and raises the temperature of the refrigerant from the reference temperature to a desired set temperature, and includes a wire that is attached to the pipe 26 at a position as close as possible to the mounting table 12. The inner heater 40 and the power source 42 that supplies electric power to the in-line heater 40. The in-line heater 40 is preferably not only a high-speed heating function but also has a physical strength that is resistant to the pressure of the refrigerant in the piping 26 that is long-distance by the cooling unit 14, and is preferably shown in FIG. Induction heating heaters are ideal.

在第2圖的構成例中，線內加熱器40，是收容形成絕緣筒46中的配管26的一部分或一區間的線圈狀SUS加熱單元件管48，於絕緣筒46周圍嵌合或裝設導線所成的工件線圈50。由電源42將高頻交流電流流在工件線圈50，則在絕緣筒46產生交流磁通，藉由該交流磁通使得感應電壓產生於SUS加熱元件管48而流動感應電流，而SUS加熱元件管48產生焦耳熱。以該SUS加熱元件管48的發熱來加熱流在管內的冷媒。與加熱燈等的玻璃管不相同而SUS加熱元件管48的物理性強度極大，而充分耐於媒體壓力。In the configuration example of Fig. 2, the in-line heater 40 is a coil-shaped SUS heating unit tube 48 that houses a part or a section of the pipe 26 in the insulating cylinder 46, and is fitted or mounted around the insulating cylinder 46. The workpiece coil 50 formed by the wire. When the high-frequency alternating current flows from the power source 42 to the workpiece coil 50, an alternating magnetic flux is generated in the insulating cylinder 46, and the alternating magnetic flux causes the induced voltage to be generated in the SUS heating element tube 48 to flow an induced current, and the SUS heating element tube 48 produces Joule heat. The refrigerant flowing in the tube is heated by the heat generated by the SUS heating element tube 48. Unlike the glass tube of the heat lamp or the like, the SUS heating element tube 48 has a large physical strength and is sufficiently resistant to the medium pressure.

在第1圖中，在該實施形態，於加熱單元16，為了提高冷媒昇溫功能的精度，設有：在線內加熱器40下游側來檢測冷媒溫度的溫度感測器52，及因應於該溫度感測器52的輸出訊號(溫度檢測訊號)用以控制電源42的供給電力甚至於加熱器40的發熱量使冷媒溫度一致於設定值的調溫器54。In the first embodiment, in the embodiment, in order to improve the accuracy of the refrigerant temperature raising function, the heating unit 16 is provided with a temperature sensor 52 for detecting the temperature of the refrigerant on the downstream side of the in-line heater 40, and in response to the temperature. The output signal (temperature detection signal) of the sensor 52 is used to control the power supply of the power source 42 or even the heat generation of the heater 40 so that the refrigerant temperature is consistent with the set value of the thermostat 54.

又，為了更提高急速加熱，並為了可變控制由配管26供給於載置台中心部領域的冷媒通路22的冷媒流量，也設置例如手動操作式或機械操作式(例如電磁閥式、馬達驅動式、氣動操作式等)的可變節流閥所構成的流量控制閥44。又，為了提高控制流量的精度，流量測定器或流量感測器56被安裝於配管26。Further, in order to further increase the rapid heating, and to variably control the flow rate of the refrigerant supplied to the refrigerant passage 22 in the center of the mounting table by the pipe 26, for example, a manual operation type or a mechanical operation type (for example, a solenoid valve type or a motor drive type) is also provided. A flow control valve 44 composed of a variable throttle valve of a pneumatic operation type or the like. Further, in order to improve the accuracy of the control flow rate, the flow rate measuring device or the flow rate sensor 56 is attached to the pipe 26.

在第3圖表示在加熱單元16中將線內加熱器40的發熱量保持在一定時的流量與冷媒昇降溫度的關係(一例)。如圖示地，流量與冷媒昇降溫度是定性上具反比例的關係，愈縮小流量，愈可大幅地昇溫冷媒的溫度。藉由此，組合基於流量控制閥44的冷媒流量控制與基於線內加熱器40的加熱控制，可將冷媒溫度從基準溫度高速且正確地上昇或下降至所期望的設定值。而且，線內加熱器40配置於接近於載置台12的位置之故，因而可將冷媒的急速昇降溫度以極小時常數仍傳輸至載置台12側，並可將載置台12的各部以短時間高速地昇降溫度至所期望的設定值。加熱單元16內的各部動作及單元整體的冷媒昇降溫動作是藉由控制器20被控制。The relationship between the flow rate at which the heat generation amount of the in-line heater 40 is held at the timing and the temperature of the refrigerant rise and fall in the heating unit 16 is shown in Fig. 3 (an example). As shown in the figure, the flow rate and the temperature of the refrigerant rise and fall are qualitatively inversely proportional. The smaller the flow rate, the more the temperature of the refrigerant can be raised. Thereby, the refrigerant flow rate control based on the flow rate control valve 44 and the heating control by the in-line heater 40 can be combined to increase or decrease the refrigerant temperature from the reference temperature to the desired set value at a high speed and correctly. Further, since the in-line heater 40 is disposed close to the mounting table 12, the rapid rise and fall temperature of the refrigerant can be transmitted to the mounting table 12 side at an extremely small constant, and the respective portions of the mounting table 12 can be short-timed. The temperature is raised and lowered at a high speed to the desired set value. The operation of each unit in the heating unit 16 and the cooling and cooling operation of the entire unit are controlled by the controller 20.

在第1圖中，流路轉換單元18是除了上述兩個埠(第一入口及第一出口)18a、18c之外也具有兩個埠(第二入口及第二出口)18b、18d。在此，第二入口18b是經由配管58被連接於設在比配管26的加熱單元16還上游側的流路分岐點N1 。又，第二出口18d是經由配管60被連接於設在配管32的流路分岐點N2 。In Fig. 1, the flow path converting unit 18 has two turns (second inlet and second outlet) 18b, 18d in addition to the above two turns (first inlet and first outlet) 18a, 18c. Here, the second inlet 18b is connected to the flow path branch point N 1 provided on the upstream side of the heating unit 16 of the pipe 26 via the pipe 58. Further, the second outlet 18d is connected to the flow path branching point N 2 provided in the pipe 32 via the pipe 60.

在流路轉換單元18內，設有複數個閥例如四個開關閥62、64、66、68。更具體來說，第1開關閥62是被設在第一入口18a與第一出口18c之間；第二開關閥64是被設在第一入口18a與第二出口18d之間；第三開關閥66是被設在第二入口18b與第一出口18c之間；第四開關閥68是被設在第二入口18b與第二出口18d之間。流路轉換單元18是可設置於任意場所，惟至少用以選擇性地連接冷媒通路22的出口22b與冷媒通路24的入口24a的開關閥62是配置在載置台12的附近較理想。In the flow path converting unit 18, a plurality of valves such as four switching valves 62, 64, 66, 68 are provided. More specifically, the first switching valve 62 is disposed between the first inlet 18a and the first outlet 18c; the second switching valve 64 is disposed between the first inlet 18a and the second outlet 18d; the third switch The valve 66 is disposed between the second inlet 18b and the first outlet 18c; the fourth switching valve 68 is disposed between the second inlet 18b and the second outlet 18d. The flow path conversion unit 18 is provided at any place, and it is preferable that at least the on-off valve 62 for selectively connecting the outlet 22b of the refrigerant passage 22 and the inlet 24a of the refrigerant passage 24 is disposed in the vicinity of the mounting table 12.

此些開關閥62、64、66、68是以一定關係相輔相成地施以導通．斷開也可以。作為一例，以常開閥構成第二及第三開關閥64、66，而以常閉閥構成第一及第三開關閥62、68也可以。尤其是，由增加流路轉換模式的種類的觀點，作成可獨立各開關閥62、64、66、68的導通．斷開的構成較理想。流路轉換單元18內的各部動作(開關閥62~68的導通．斷開動作)及單元整體的流路轉換動作是藉由控制器20被控制。The switching valves 62, 64, 66, 68 are electrically connected in a complementary relationship. It is also possible to disconnect. As an example, the second and third on-off valves 64 and 66 may be configured by a normally open valve, and the first and third on-off valves 62 and 68 may be configured by a normally closed valve. In particular, from the viewpoint of increasing the type of flow switching mode, the independent switching valves 62, 64, 66, 68 can be turned on. The disconnected configuration is ideal. The operation of each unit in the flow path conversion unit 18 (the on/off operation of the on-off valves 62 to 68) and the flow path conversion operation of the entire unit are controlled by the controller 20.

控制器20是包含CPU或記憶體等的電腦系統所構成，如上述地，控制該基板溫度控制裝置內的各部，尤其是冷卻單元14、加熱單元16、流路轉換單元18的各該動作與整體動作(順序)。主控制部140內的構成是參照第24圖說明如後。The controller 20 is constituted by a computer system including a CPU or a memory, and as described above, controls each unit in the substrate temperature control device, in particular, the operation of the cooling unit 14, the heating unit 16, and the flow path conversion unit 18. Overall action (sequence). The configuration in the main control unit 140 will be described later with reference to Fig. 24.

以下，針對於該實施形態的載置台溫度控制裝置的溫度控制功能加以說明。在該載置台溫度控制裝置中，藉由控制器20的控制來組合加熱單元16的加熱動作的導通．斷開狀態與流路轉換單元18的開關閥62、64、66、68的導通．斷開狀態，而針對於對於載置台12的溫度控制可得到6種類模式(A)、(B)、(C)、(D)、(E)、(F)。Hereinafter, the temperature control function of the stage temperature control device of this embodiment will be described. In the stage temperature control device, the conduction of the heating operation of the heating unit 16 is combined by the control of the controller 20. The disconnection state is connected to the on-off valves 62, 64, 66, 68 of the flow path conversion unit 18. In the off state, six types of modes (A), (B), (C), (D), (E), and (F) are obtained for temperature control of the stage 12.

如第4圖所示地，模式(A)是在加熱單元16將加熱動作作成導通狀態，同時在流路轉換單元18將開關閥64、66分別作成導通狀態，並將開關閥62、68分別作成斷開狀態。如第5圖所示地，藉由該流路轉換單元18內的流路轉換，在冷卻單元14的送出口14a與反饋口14b之間，並聯地連接有中心部領域的冷媒通路22與周邊部領域的冷媒通路24。As shown in Fig. 4, in the mode (A), the heating operation is performed in the heating unit 16, and the switching valves 64 and 66 are respectively turned on in the flow path switching unit 18, and the switching valves 62 and 68 are respectively turned on. Make a disconnected state. As shown in Fig. 5, the refrigerant passage 22 in the center portion and the periphery are connected in parallel between the delivery port 14a of the cooling unit 14 and the feedback port 14b by the flow path conversion in the flow path conversion unit 18. The refrigerant passage in the field of 24

亦即，由冷卻單元14以基準溫度所送出的冷媒中的一部分，亦即一直通過流路分岐點N1 而流在配管26的冷媒，是在途中的加熱單元16使冷媒溫度由基準溫度昇溫至所期望的設定溫度之後流進冷媒通路22。然後，當由冷媒通路22經配管28而進入流路轉換單元18，則未朝冷媒通路24，經導通狀態的開關閥64而穿通至配管60側，再由流路分岐點N2 經配管32而反饋至冷卻單元14。又，由流路分岐點N1 分流至配管58側的冷媒，是仍以基準溫度經流路轉換單元18(導通狀態的流路轉換單元66)及配管30而進入周邊部領域的冷媒通路24。又，從冷媒通路24流出之後，直接經配管32而反饋至冷卻單元14。That is, the reference portion 14 to the refrigerant feeding temperature of the cooling unit, i.e. has to flow in the refrigerant pipes 26 of the branch point N 1 through the flow passage, it is in the middle of the heating unit 16 so that the refrigerant temperature is raised from the reference temperature It flows into the refrigerant passage 22 after reaching the desired set temperature. Then, when the refrigerant passage 22 enters the flow path conversion unit 18 via the pipe 28, the refrigerant passage 24 is not passed through the on-state switching valve 64 to the side of the pipe 60, and the flow path branch point N 2 is passed through the pipe 32. And fed back to the cooling unit 14. In addition, the refrigerant that is branched to the side of the pipe 58 by the flow path branch point N 1 is the refrigerant passage 24 that enters the peripheral portion by the flow path conversion unit 18 (the flow path conversion unit 66 in the on state) and the pipe 30 at the reference temperature. . Further, after flowing out of the refrigerant passage 24, it is directly fed back to the cooling unit 14 via the pipe 32.

如此，依照模式(A)則載置台12周邊部領域被以基準溫度的冷媒作調溫，同時以載置台12的中心部領域比基準溫度更高一般的設定溫度的冷媒來進行調溫。藉由此，在載置台12中得到中心部領域比周邊部領域還相對地變高的山形或梯形狀的溫度分布特性，兩者間的高低差(溫度差)也可任意地控制。而且，藉由如上述的加熱單元16的急速昇溫功能，而在短時間可確立此種溫度分布特性。In this manner, according to the mode (A), the peripheral portion of the mounting table 12 is tempered by the refrigerant of the reference temperature, and the temperature is adjusted by the refrigerant having a higher set temperature than the reference temperature in the center of the mounting table 12. As a result, the temperature distribution characteristics of the mountain shape or the trapezoidal shape in which the center portion region is relatively higher than the peripheral portion region are obtained in the mounting table 12, and the height difference (temperature difference) between the two can be arbitrarily controlled. Further, such a temperature distribution characteristic can be established in a short time by the rapid temperature rising function of the heating unit 16 as described above.

如第6圖所示地，模式(B)是在加熱單元16中將加熱動作作成導通狀態，同時在流路轉換單元18將開關閥62、68分別作成導通狀態，並將開關閥64、66分別作成斷開狀態。如第7圖所示地，藉由該流路轉換單元18內的流路轉換，在冷卻單元14的送出口14a與反饋口14b之間，串聯地連接有中心部領域的冷媒通路22與周邊部領域的冷媒通路24，而且也形成配管58、流路轉換單元18及配管60所成的旁通70。As shown in Fig. 6, the mode (B) is that the heating operation is turned on in the heating unit 16, and the switching valves 62, 68 are respectively turned on in the flow path converting unit 18, and the switching valves 64, 66 are opened. Separate states are created separately. As shown in Fig. 7, by the flow path conversion in the flow path converting unit 18, the refrigerant passage 22 and the periphery of the center portion are connected in series between the delivery port 14a of the cooling unit 14 and the feedback port 14b. In the refrigerant passage 24 in the field, the bypass passage 70 formed by the piping 58, the flow path conversion unit 18, and the piping 60 is also formed.

更具體來說，由冷卻單元14以基準溫度所送出的冷媒中的一部分，亦即一直通過流路分岐點N1 而流在配管26的冷媒，是在途中的加熱單元16使冷媒溫度由基準溫度昇溫至所期望的設定溫度之後流進冷媒通路22。然後，當由冷媒通路22流出，則經配管28、流路轉換單元18(導通狀態的開關閥62)及配管30進入冷媒通路24，由冷媒通路24流出之後，直接通過配管32而反饋至冷卻單元14。另一方面，由流路分岐點N1 分流至配管58側的冷媒，是仍以基準溫度而貫通流路轉換單元18(導通狀態的流路轉換單元68)及配管60而由流路分岐點N2 流進配管32，之後與來自冷媒通路24側的冷媒合流而反饋至冷卻單元14。More specifically, the reference temperature of 14 by a portion of the refrigerant sent by the cooling unit, the refrigerant flows in the pipe 26 has a branch point N 1 i.e. through the flow passage, the heating unit is in the middle of the refrigerant temperature by the reference 16 The temperature is raised to a desired set temperature and then flows into the refrigerant passage 22. Then, when the refrigerant passage 22 flows out, the piping 28, the flow path switching unit 18 (the on-off valve 62 in the ON state), and the piping 30 enter the refrigerant passage 24, flow out from the refrigerant passage 24, and are directly fed back to the cooling through the piping 32. Unit 14. On the other hand, the refrigerant which is branched to the side of the pipe 58 by the flow path branch point N 1 passes through the flow path conversion unit 18 (the flow path conversion unit 68 in the on state) and the pipe 60 at the reference temperature, and is branched by the flow path. N 2 flows into the pipe 32, and then merges with the refrigerant from the refrigerant passage 24 side to feed back to the cooling unit 14.

如此地，依照模式(B)，則將載置台12的中心部領域及周邊部領域雙方以比基準溫度還高溫的冷媒調溫，而可將載置台12整體以大約一樣或平坦的溫度分布控制成比基準溫度還高的所期望的設定溫度，也可進行基於加熱單元16的急速昇溫。在此，在加熱單元16中，即使藉由流量控制閥44任意地縮小冷媒流量，也有多餘的冷媒流在旁通70之故，因而在將冷卻單元14的冷媒循環能力(冷媒送出壓力)保持在一定的狀態下仍在加熱單元可即時且穩定地進行急速昇溫。In this manner, according to the mode (B), both the center portion and the peripheral portion of the mounting table 12 are tempered by a refrigerant having a temperature higher than the reference temperature, and the entire stage 12 can be controlled with approximately the same or flat temperature distribution. The rapid temperature rise by the heating unit 16 can also be performed at a desired set temperature that is higher than the reference temperature. Here, in the heating unit 16, even if the refrigerant flow rate is arbitrarily reduced by the flow rate control valve 44, the excess refrigerant flow is bypassed 70, so that the refrigerant circulation capacity (refrigerant delivery pressure) of the cooling unit 14 is maintained. In a certain state, the heating unit can perform rapid temperature rise in an instant and stably.

模式(C)是除了未形成旁通流路70之外，採用與上述的第二模式(B)相同的冷媒供給形態。亦即，如第8圖所示地，在加熱單元16將加熱動作作成導通狀態，同時在流路轉換單元18僅將開關閥62作成導通狀態，而將其他開關閥64、66、68都作成斷開狀態。如第9圖所示地，藉由該流路轉換單元18內的流路轉換，在冷卻單元14的送出口14a與反饋口14b之間，串聯地連接著中心部領域的冷媒通路22與周邊部領域的冷媒通路24，惟在配管58與配管60之間(在流路轉換單元18)，因斷開流路，因此未形成旁通流路70。The mode (C) is the same as the above-described second mode (B) except that the bypass flow path 70 is not formed. That is, as shown in Fig. 8, the heating operation is performed in the heating unit 16 while the switching operation is performed in the flow path switching unit 18, and the other switching valves 64, 66, 68 are formed. Disconnected state. As shown in Fig. 9, by the flow path conversion in the flow path converting unit 18, the refrigerant passage 22 and the periphery of the center portion are connected in series between the delivery port 14a of the cooling unit 14 and the feedback port 14b. In the refrigerant passage 24 in the section, the bypass passage 16 is not formed between the pipe 58 and the pipe 60 (in the flow path conversion unit 18) because the flow path is closed.

這時候，由冷卻單元14以基準溫度被送出的冷媒全部一直通過流路分岐點N1 而流進配管26，在途中的加熱單元16將冷媒溫度由基準溫度昇溫至所期望的設定溫度之後進入冷媒通路22。之後，由冷媒通路22，則通過配管28、流路轉換單元18(導通狀態的開關閥62)及配管30而進入冷媒通路24，由冷媒通路24出來之後直接通過配管32而反饋至冷卻單元14。After entering this time, the 14 to the reference temperature of the fed coolant cooling means all been branch point N 1 through the flow path flows into the pipe 26, the heating unit 16 in the middle of the refrigerant temperature is raised from the reference temperature to a desired set temperature Refrigerant passage 22. After that, the refrigerant passage 22 enters the refrigerant passage 24 through the pipe 28, the flow path switching unit 18 (the on-off valve 62 in the ON state), and the pipe 30, and is discharged from the refrigerant passage 24 and directly fed back to the cooling unit 14 through the pipe 32. .

該模式(C)是未能發揮如上述模式(B)的高速且有效率的急速昇溫，惟可將載置台12整體作成以大約平坦(一樣)的溫度分布而比基準溫度還高的所期望的設定溫度。This mode (C) is a high-speed and efficient rapid temperature rise that does not exhibit the above-described mode (B), but the entire stage 12 can be made to have a flat (same) temperature distribution and a higher temperature than the reference temperature. Set the temperature.

模式(D)，是停止加熱單元16的加熱動作(作成斷開狀態)，而將流路轉換單元18內的流路作成與上述的模式(A)相同形態。亦即，如第10圖所示地，將開關閥64、66分別作成導通狀態，並將開關閥62、68分別作成斷開狀態。藉由此，如第11圖所示地，在冷卻單元14的送出口14a與反饋口14b之間並聯地連接有中心部領域的冷媒通路22與周邊部領域的冷媒通路24。In the mode (D), the heating operation of the heating unit 16 is stopped (the opening state is made), and the flow path in the flow path converting unit 18 is formed in the same manner as the above-described mode (A). That is, as shown in Fig. 10, the on-off valves 64 and 66 are respectively turned on, and the on-off valves 62 and 68 are respectively turned off. As a result, as shown in Fig. 11, the refrigerant passage 22 in the center portion and the refrigerant passage 24 in the peripheral portion are connected in parallel between the delivery port 14a of the cooling unit 14 and the feedback port 14b.

因此，由冷卻單元14以基準溫度所送出的冷媒中的一部分，亦即一直通過流路分岐點N1 而流在配管26的冷媒，是不會在途中的加熱單元16被加熱而仍以基準溫度進入冷媒通路22。之後，當從冷媒通路22送出而從配管28進入流路轉換單元18，則不向冷媒通路24，而經導通狀態的開關關64貫穿配管60側，再由流路分岐點N2 經配管32反饋至冷卻單元14。又，由流路分岐點N1 被分流至配管58側的冷媒也仍以基準溫度經流路轉換單元18(導通狀態的開關閥66)及配管30而進入周邊部領域的冷媒通路24。又，由冷媒通路24所送出之後，直接經配管32反饋至冷卻單元14。Therefore, the reference portion 14 to the refrigerant feeding temperature of the cooling unit, i.e. has to flow in the refrigerant pipes 26 of the branch point N 1 through the flow passage, not in the middle of the heating unit 16 is heated still reference The temperature enters the refrigerant passage 22. After that, when it is sent out from the refrigerant passage 22 and enters the flow path conversion unit 18 from the pipe 28, the switch 64 of the ON state is not passed through the pipe 60 side, and the flow path branch point N 2 is supplied to the pipe 32. Feedback to the cooling unit 14. Further, the flow path diverged was split to a 58-side pipe of the refrigerant point N 1 is also still a reference temperature for 18 channel-switching means (switch to be turned valve 66) and the pipe 30 into the field of the peripheral portion of the refrigerant passage 24. Moreover, after being sent out by the refrigerant passage 24, it is directly fed back to the cooling unit 14 via the pipe 32.

如此地，依照模式(D)，以基準溫度來調溫載置台12的中心部領域及周邊部領域的雙方，可將載置台12整體以大約平坦(一樣)的溫度分布控制成基準溫度附近的溫度。在此重要事為，由模式(A)移行至模式(D)，是不僅將加熱單元16由導通狀態轉換至斷開狀態，而且也可高速地進行。亦即，停止基於加熱單元16的急速昇溫而可實現由設定溫度急速降溫至基準溫度。即使由模式(B)亦或是模式(C)移行至模式(D)，也僅增加流路轉換單元18的轉換動作，而同樣地高速地進行。In this manner, according to the mode (D), both the center portion area and the peripheral portion of the mounting table 12 are temperature-controlled at the reference temperature, and the entire stage 12 can be controlled to a temperature near the reference temperature by a flat (same) temperature distribution. temperature. The important thing here is that the transition from mode (A) to mode (D) is not only to switch the heating unit 16 from the on state to the off state, but also to perform the high speed. That is, the rapid temperature rise from the set temperature can be stopped based on the rapid temperature rise of the heating unit 16 to the reference temperature. Even if the mode (B) or the mode (C) shifts to the mode (D), only the switching operation of the flow conversion unit 18 is increased, and the high-speed operation is performed in the same manner.

模式(E)是停止加熱單元16的加熱動作(作成斷開狀態)，將流路轉換單元18的流路狀態作成與上述模式(B)相同形態。亦即，如第12圖所示地，將開關閥62、68分別作成導通狀態，並將開關閥64、66分別作成斷開狀態。藉由此，如第13圖所示地，在冷卻單元14的送出口14a與反饋口14b之間，串聯地連接有中心部領域的冷媒通路22與周邊部領域的冷媒通路24，而且也形成配管58、流路轉換單元18及配管60所成的旁通70。The mode (E) is a heating operation (opening state) in which the heating unit 16 is stopped, and the flow path state of the flow path converting unit 18 is the same as the above mode (B). That is, as shown in Fig. 12, the on-off valves 62 and 68 are respectively turned on, and the on-off valves 64 and 66 are respectively turned off. As a result, as shown in Fig. 13, between the delivery port 14a of the cooling unit 14 and the feedback port 14b, the refrigerant passage 22 in the center portion and the refrigerant passage 24 in the peripheral portion are connected in series, and are also formed. The bypass line 70 formed by the piping 58, the flow path conversion unit 18, and the piping 60.

這時候，由冷卻單元14以基準溫度所送出的冷媒中的一部分，亦即一直通過流路分岐點N1 而流在配管26的冷媒，是在途中的加熱單元16不會昇溫而仍以基準溫度進入冷媒通路22。然後，當由冷媒通路22流出，則經配管28、流路轉換單元18(導通狀態的開關閥62)及配管30進入冷媒通路24，由冷媒通路24流出之後，直接通過配管32而反饋至冷卻單元14。另一方面，由流路分岐點N1 分流至配管58側的冷媒，是仍以基準溫度而貫通流路轉換單元18(導通狀態的流路轉換單元68)及配管60而由流路分岐點N2 流進配管32，之後與來自冷媒通路24側的冷媒合流而反饋至冷卻單元14。At this time, the reference part 14 is sent by the refrigerant temperature in the cooling unit, i.e. it has to flow in the refrigerant pipes 26 of the branch point N 1 through the flow passage, is in the middle of the heating unit 16 heats up, the reference still The temperature enters the refrigerant passage 22. Then, when the refrigerant passage 22 flows out, the piping 28, the flow path switching unit 18 (the on-off valve 62 in the ON state), and the piping 30 enter the refrigerant passage 24, flow out from the refrigerant passage 24, and are directly fed back to the cooling through the piping 32. Unit 14. On the other hand, the refrigerant which is branched to the side of the pipe 58 by the flow path branch point N 1 passes through the flow path conversion unit 18 (the flow path conversion unit 68 in the on state) and the pipe 60 at the reference temperature, and is branched by the flow path. N 2 flows into the pipe 32, and then merges with the refrigerant from the refrigerant passage 24 side to feed back to the cooling unit 14.

在該模式(E)中，以基準溫度的冷媒來調溫載置台12的中心領域及周邊領域的雙方，可將載置台12整體以大約平坦的溫度分布控制成基準溫度附近的溫度。又，也簡單且高速地進行由模式(A)、模式(B)或模式(C)至模式(E)的移行。In this mode (E), both the center area of the mounting table 12 and the peripheral area are tempered by the refrigerant of the reference temperature, and the entire stage 12 can be controlled to a temperature near the reference temperature with a flat temperature distribution. Further, the transition from the mode (A), the mode (B), or the mode (C) to the mode (E) is also performed simply and at high speed.

可是，嚴密地來說，模式(E)與模式(D)是載置台12的溫度分布微妙地不相同。亦即，在模式(D)中，由冷卻單元14以基準溫度所送出的冷媒在配管26的流路分岐點N1 分成兩部分而並聯地供給於載置台12的中心部領域的冷媒通路22及周邊部領域的冷媒通路24之故，因而成為以大約同一冷媒溫度來調溫載置台12的中心部領域與周邊部領域，而載置台12整體上的溫度分布的平坦性(均勻性)較高。對於此，在模式(E)中，由冷卻單元14以基準溫度所送出的冷媒全部最初流在載置台12的中心部領域的冷媒通路22，之後再流在載置台12的周邊部領域的冷媒通路24之故，因而冷卻能力在前者(中心部領域)比後者(周邊部領域)稍強，而在載置台12整體的溫度分布嚴密地並不是平坦而周邊部有比中心部稍高的趨勢。However, strictly speaking, the mode (E) and the mode (D) are subtly different in temperature distribution of the mounting table 12. In other words, in the mode (D), the refrigerant sent from the cooling unit 14 at the reference temperature is supplied to the refrigerant passage 22 in the center portion of the mounting table 12 in parallel at the flow path branch point N 1 of the pipe 26 in two parts. In the case of the refrigerant passages 24 in the peripheral portion, the center portion and the peripheral portion of the mounting table 12 are tempered at approximately the same refrigerant temperature, and the flatness (uniformity) of the temperature distribution on the entire stage 12 is higher. high. In the mode (E), all of the refrigerant sent from the cooling unit 14 at the reference temperature first flows into the refrigerant passage 22 in the center portion of the mounting table 12, and then flows into the refrigerant in the peripheral portion of the mounting table 12. In the case of the passage 24, the cooling capacity is slightly stronger in the former (the center portion) than in the latter (the peripheral portion), and the temperature distribution on the entire stage 12 is not strictly flat, and the peripheral portion tends to be slightly higher than the center portion. .

最後，第六個模式(F)，是停止加熱單元16的加熱動作(作成斷開狀態)，將流路轉換單元18內的流路狀態作成與上述模式(C)相同形態。亦即，如第14圖所示地，僅將開關閥62作成導通狀態，並將其他開關閥64、66、68都作成斷開狀態。如第15圖所示地，在冷卻單元14的送出口14a與反饋口14b之間，雖串聯地連接有中心部領域的冷媒通路22與周邊部領域的冷媒通路24，惟在配管58與配管60之間(在流路轉換單元18)為了斷開流路而未形成旁通流路70。Finally, the sixth mode (F) is to stop the heating operation of the heating unit 16 (in the open state), and to make the flow path state in the flow path converting unit 18 the same as the above mode (C). That is, as shown in Fig. 14, only the on-off valve 62 is turned on, and the other on-off valves 64, 66, 68 are turned off. As shown in Fig. 15, between the delivery port 14a of the cooling unit 14 and the feedback port 14b, the refrigerant passage 22 in the center portion and the refrigerant passage 24 in the peripheral portion are connected in series, but the piping 58 and the piping are provided. Between 60 (in the flow path conversion unit 18), the bypass flow path 70 is not formed in order to open the flow path.

這時候，由冷卻單元14以基準溫度所送出的冷媒全部直接通過流路分岐點N1 而流在配管26，不會在途中的加熱單元16昇溫，而仍以基準溫度流進冷媒通路22。然後，當由冷媒通路22流出，則經配管28、流路轉換單元18(導通狀態的開關閥62)及配管30進入冷媒通路24，由冷媒通路24流出之後，直接通過配管32而反饋至冷卻單元14。At this time, the flow passage pipe 26, not in the middle of heating the heating unit 16, and the reference temperature is still flowing into the refrigerant branch point N 1 22 are all at the reference temperature of 14 by a refrigerant cooling unit is fed directly through the flow passage. Then, when the refrigerant passage 22 flows out, the piping 28, the flow path switching unit 18 (the on-off valve 62 in the ON state), and the piping 30 enter the refrigerant passage 24, flow out from the refrigerant passage 24, and are directly fed back to the cooling through the piping 32. Unit 14.

在該模式(F)中，也以基準溫度冷媒來調溫載置台12的中心部領域及周邊部領域雙方，而可將載置台12整體以大約平坦的溫度分布控制在基準溫度附近的溫度。又，由模式(A)、模式(B)或模式(C)也可簡單且高速地進行移行至模式(F)。In this mode (F), both the center portion area and the peripheral portion of the mounting table 12 are tempered by the reference temperature refrigerant, and the entire stage 12 can be controlled to a temperature near the reference temperature with a flat temperature distribution. Further, the transition to the mode (F) can be performed simply and at high speed by the mode (A), the mode (B), or the mode (C).

正確地，嚴密地，模式(F)，也與模式(D)及模式(E)的作用上有所差異。與模式(D)的不同處，是針對於模式(E)符合與上述者相同。又，與模式(E)相比較，則在模式(F)中，未形成旁通流路70之故，因而可將由冷卻單元14所送出的冷媒全部流在載置台12的冷媒通路22、24，並可更充分地發揮基於冷卻單元14的溫度控制功能。Correctly, strictly, mode (F) also differs from mode (D) and mode (E). The difference from the mode (D) is that the mode (E) is the same as the above. Further, in the mode (F), the bypass flow path 70 is not formed in comparison with the mode (E), so that all the refrigerant sent from the cooling unit 14 can flow through the refrigerant passages 22 and 24 of the mounting table 12. The temperature control function based on the cooling unit 14 can be more fully utilized.

如上所述地，在該實施形態中，藉由具有一台冷卻單元14，及使用線內加熱器40的加熱單元16，及四個開關閥62、64、66、68所構成的流路轉換單元18，及控制各單元14、16、18的動作或狀態的控制器20的以低成本又簡單構成的載置台溫度控制裝置，可將載置台12的溫度或溫度分布以高速昇降溫度高精度地控制成多種類的設定值或輪廓。As described above, in this embodiment, the flow path is constituted by having one cooling unit 14, the heating unit 16 using the in-line heater 40, and the four switching valves 62, 64, 66, 68. The unit 18 and the stage temperature control device of the controller 20 for controlling the operation or state of each unit 14, 16, 18 can realize the high temperature and temperature distribution of the stage 12 with high speed and temperature. Ground control into a variety of settings or contours.

(實施例2)(Example 2)

在第16圖，表示本發明的一實施形態的電漿處理裝置的構成。在該電漿處理裝置，組裝有基於上述的第一實施形態的載置台溫度控制裝置。Fig. 16 is a view showing the configuration of a plasma processing apparatus according to an embodiment of the present invention. In the plasma processing apparatus, the stage temperature control apparatus according to the first embodiment described above is incorporated.

如第16圖所示地，該電漿處理裝置是由平行平板型電漿蝕刻裝置所構成，具有以內壁表面經防蝕鋁所處理的氧化鋁膜，釔氧化(Y2 O3 )膜，陶瓷或石英所覆蓋的鋁或不銹鋼等所成的圓筒形室(處理容器)90。該室90是相當於第1圖的室10者。又，室90是被保護接地。As shown in Fig. 16, the plasma processing apparatus is composed of a parallel plate type plasma etching apparatus, and has an aluminum oxide film treated with alumite on the inner wall surface, a tantalum oxide (Y 2 O 3 ) film, ceramics. Or a cylindrical chamber (processing vessel) 90 made of aluminum or stainless steel covered by quartz. This chamber 90 is equivalent to the chamber 10 of Fig. 1 . Again, chamber 90 is protected from ground.

在室90內，作為被處理基板，例如載置半導體晶圓W的圓板的載置台12設置作為下部電極或感應器。該載置台12是例如由鋁所構成，經由絕緣性筒狀保持部92被從室90的底部朝垂直方向延伸的筒狀支持94所支持。在筒狀保持部92上面，配置著環狀地圍繞載置台12上面而如石英所成的聚焦環96。In the chamber 90, as a substrate to be processed, for example, a mounting table 12 on which a disk of a semiconductor wafer W is placed is provided as a lower electrode or an inductor. The mounting table 12 is made of, for example, aluminum, and is supported by a cylindrical support 94 that extends from the bottom of the chamber 90 in the vertical direction via the insulating cylindrical holding portion 92. On the upper surface of the cylindrical holding portion 92, a focus ring 96 which is annularly surrounds the upper surface of the mounting table 12 and is made of quartz is disposed.

在室90的側壁與筒狀支持部94之間形成有排氣路98，而在該排氣路98的入口或途中安裝有環狀緩衝板100，而且在底部設有排氣口102。在該排氣口102經由排氣管104連接有排氣裝置106。排氣裝置106是具有真空泵，可將室90內的處理室間減壓至所定真空度。在室90的側壁安裝有開關半導體晶圓W的搬進出口的閘閥108。An exhaust passage 98 is formed between the side wall of the chamber 90 and the cylindrical support portion 94, and an annular buffer plate 100 is attached to the inlet or the middle of the exhaust passage 98, and an exhaust port 102 is provided at the bottom. An exhaust device 106 is connected to the exhaust port 102 via an exhaust pipe 104. The exhaust unit 106 has a vacuum pump that decompresses the processing chambers in the chamber 90 to a predetermined degree of vacuum. A gate valve 108 for switching the loading and unloading of the semiconductor wafer W is attached to the side wall of the chamber 90.

在載置台12，經由匹配器112及供電棒114電性地連接有電漿生成用的高頻電源110。該高頻電源110是將所期望的高頻率例如27MHz以上(例如60MHz)的高頻施加於下部電極亦即施加於載置台12。與載置台12平行地相對，而在室90的頂部設有蓮蓬頭116作為接地電位之上部電極。藉由來自高頻電源110的高頻而於載置台12與蓮蓬頭116之間的空間亦即電漿生成空間PS形成有高頻電場。The high frequency power source 110 for plasma generation is electrically connected to the mounting table 12 via the matching unit 112 and the power supply rod 114. The high-frequency power source 110 is applied to the mounting table 12 by applying a desired high frequency, for example, a high frequency of 27 MHz or more (for example, 60 MHz) to the lower electrode. The shower head 116 is provided as a ground potential upper electrode at the top of the chamber 90 in parallel with the mounting table 12. A high-frequency electric field is formed by a space between the mounting table 12 and the shower head 116, that is, the plasma generation space PS, from the high frequency of the high-frequency power source 110.

上述蓮蓬頭116是具有：具多數氣體通氣孔118a的電極板118，及可裝卸自如地支持該電極板118的電極支持體120。在電極支持體120的內部設有緩衝室122，而在該緩衝室122的氣體導入口122a連接有來自處理氣體供給部124的氣體供給配管126。The shower head 116 has an electrode plate 118 having a plurality of gas vent holes 118a, and an electrode support 120 detachably supporting the electrode plate 118. A buffer chamber 122 is provided inside the electrode support 120, and a gas supply pipe 126 from the process gas supply unit 124 is connected to the gas introduction port 122a of the buffer chamber 122.

在室90的頂部中，在電漿生成空間PS周邊的上方(較理想是蓮蓬頭116的周圍)，設有環狀或同心狀地延伸的磁場形成機構128。該磁場形成機構128是將開始室90內的電漿生成空間PS的高頻放電(電漿著火)作成容易而其為了安定地維持放電的功能。In the top of the chamber 90, above the periphery of the plasma generation space PS (preferably around the shower head 116), a magnetic field forming mechanism 128 extending in a ring shape or concentrically is provided. This magnetic field forming mechanism 128 is a function of facilitating high-frequency discharge (plasma ignition) of the plasma generation space PS in the start chamber 90, and maintaining the discharge in a stable manner.

在載置台12的上面設有以靜電吸附力保持半導體晶圓W所用的靜電吸盤130。該靜電吸盤130是將導電膜所構成的電極130a夾在一對絕緣膜130b、130c之間者，而在電極130a經由開關134電性地連接有直流電源132。藉由來自直流電源132的直流電壓，成為可將半導體晶圓W以庫侖力吸附保持在吸盤上。An electrostatic chuck 130 for holding the semiconductor wafer W by electrostatic adsorption is provided on the upper surface of the mounting table 12. The electrostatic chuck 130 is formed by sandwiching an electrode 130a made of a conductive film between a pair of insulating films 130b and 130c, and a DC power source 132 is electrically connected to the electrode 130a via a switch 134. By the DC voltage from the DC power source 132, the semiconductor wafer W can be adsorbed and held on the chuck by Coulomb force.

在載置台12的內部，與上述的第1實施形態同樣地，於中心部領域設有環狀或螺旋狀地延伸的第一冷媒通路22，而在周邊部領域設有環狀或螺旋狀地延伸的第二冷媒通路24。又，在此些冷媒通路22、24，由具有冷卻單元14，加熱單元16及流路轉換單元18的與上述第一實施形態同樣的載置台溫度控制裝置循環供給著所定溫度的冷媒。In the inside of the mounting table 12, similarly to the above-described first embodiment, the first refrigerant passage 22 extending in a ring shape or a spiral shape is provided in the center portion, and the peripheral portion is provided with a ring shape or a spiral shape. An extended second refrigerant passage 24. Further, in the refrigerant passages 22 and 24, the stage temperature control device having the cooling unit 14, the heating unit 16, and the flow path conversion unit 18, which is the same as the above-described first embodiment, circulates and supplies the refrigerant at a predetermined temperature.

又，來自傳熱氣體供給部136的例如He氣體的傳熱氣體經由氣體供給線138供給於靜電吸盤130上面與半導體晶圓W背面之間。Further, a heat transfer gas such as He gas from the heat transfer gas supply unit 136 is supplied between the upper surface of the electrostatic chuck 130 and the back surface of the semiconductor wafer W via the gas supply line 138.

控制部140是個別地控制該電漿蝕刻裝置內的各部，也統括控制整體順序者，而也兼具載置台溫度控制裝置的控制器20(第1圖)。The control unit 140 individually controls each unit in the plasma etching apparatus, and also controls the overall order, and also has a controller 20 (first drawing) that mounts the stage temperature control device.

在該電漿處理裝置，雖省略圖示，惟作為上部電極的蓮蓬頭116連接例如60MHz的27MHz以上的高頻的高頻電源，而於下部電源的載置台12連接例如2MHz的2MHz~27MHz的範圍內頻率的高頻電源的構成也可以。在該情形，於載置台12電性地連接有用以將來自蓮蓬頭116側的高頻(60MHz)接通至接地的高通濾波器(HPF)，而於蓮蓬頭116電性地連接有用以將來自載置台12側的高頻(2MHz)接通至接地的低通濾波器(LPF)較理想。In the plasma processing apparatus, the shower head 116 as the upper electrode is connected to, for example, a high-frequency high-frequency power source of 27 MHz or higher at 60 MHz, and is connected to the mounting base 12 of the lower power source in a range of 2 MHz to 27 MHz of, for example, 2 MHz. The configuration of the high frequency power supply of the internal frequency is also possible. In this case, the mounting table 12 is electrically connected to a high-pass filter (HPF) for turning the high frequency (60 MHz) from the showerhead 116 side to ground, and the shower head 116 is electrically connected to be used to carry the load. A low-pass filter (LPF) with a high frequency (2 MHz) on the stage 12 side connected to the ground is preferred.

在該電漿處理裝置中，欲進行蝕刻，首先將閘閥108作成開啟狀態而將加工對象的半導體晶圓W搬進室90內，載置於載置台12上。之後藉由直流電源132將直流電壓施加於靜電吸盤130的電極130a，並將半導體晶圓W固定在靜電吸盤130上。然後，如下述地進行載置台12的溫度控制，再將來自傳熱氣體供應部136的傳熱氣體供應於靜電吸盤130上面與半導體晶圓W背面。之後，從處理氣體供應部124將蝕刻氣體(一般為混合氣體)以所定流量及流量比導進室90內，而藉由排氣裝置106將室90內的壓力作成設定值，還由高頻電源110將高頻以所定功率供應於載置台12。由蓮蓬頭116所吐出的蝕刻氣體是在電漿生成空間PS內經放電使之電漿化，而藉由在該電漿所生成的游離基或離子，半導體晶圓W的主面被蝕刻。In the plasma processing apparatus, in order to perform etching, the gate valve 108 is first opened, and the semiconductor wafer W to be processed is carried into the chamber 90 and placed on the mounting table 12. Thereafter, a DC voltage is applied to the electrode 130a of the electrostatic chuck 130 by the DC power source 132, and the semiconductor wafer W is fixed to the electrostatic chuck 130. Then, the temperature control of the mounting table 12 is performed as follows, and the heat transfer gas from the heat transfer gas supply unit 136 is supplied to the upper surface of the electrostatic chuck 130 and the back surface of the semiconductor wafer W. Thereafter, an etching gas (generally a mixed gas) is introduced into the chamber 90 from the processing gas supply unit 124 at a predetermined flow rate and flow rate ratio, and the pressure in the chamber 90 is set to a set value by the exhaust unit 106, and is also a high frequency. The power source 110 supplies the high frequency to the mounting table 12 at a predetermined power. The etching gas ejected from the shower head 116 is plasma-discharged in the plasma generation space PS, and the main surface of the semiconductor wafer W is etched by radicals or ions generated in the plasma.

在如上述的電漿蝕刻中，將使用該實施形態的載置台溫度控制技術來控制蝕刻特性的方法的幾個例加以說明。In the plasma etching as described above, a few examples of a method of controlling the etching characteristics using the stage temperature control technique of the embodiment will be described.

在電漿處理裝置，藉由處理種類或裝置構造，在載置台上被處理基板的溫度分布受到各種影響。一般，藉由來自電漿或室壁的熱輻射或高密度電子等，基板上的溫度是邊緣部的溫度有比中心部領域還高的趨勢。如上述地，依照本發明，藉由適用溫度控制模式(A)，成為可將半導體晶圓W表面的溫度作成均勻。In the plasma processing apparatus, the temperature distribution of the substrate to be processed on the mounting table is variously affected by the type of processing or the structure of the apparatus. Generally, the temperature on the substrate is such that the temperature at the edge portion is higher than that in the center portion region by heat radiation or high-density electrons from the plasma or the chamber wall. As described above, according to the present invention, by applying the temperature control mode (A), the temperature of the surface of the semiconductor wafer W can be made uniform.

亦即，如上述地，在載置台12的溫度控制中，選擇模式(A)(第4圖及第5圖)，則在載置台12中，可將內側(中心部領域)的溫度作成比周邊部還高。藉由此，如第17圖所示地，在載置台12上的半導體晶圓W，在中心部領域與周邊部領域可得到大約均勻(平坦)的溫度分布。附帶地說明，如第18圖所示地，當於載置台12的流體通路22、24流著大約相等溫度的冷媒，則在載置台12中作成中心部領域與周邊部領域大約均勻(平坦)的溫度分布，藉由此，在載置台12上的半導體晶圓W中，藉由來自電漿或室壁的熱輻射等使周邊部領域比中心部領域容易變高。In other words, as described above, in the temperature control of the mounting table 12, when the mode (A) (Fig. 4 and Fig. 5) is selected, the temperature of the inner side (the center portion) can be made to be larger in the mounting table 12. The surrounding area is still high. As a result, as shown in FIG. 17, the semiconductor wafer W on the mounting table 12 can obtain an approximately uniform (flat) temperature distribution in the center portion and the peripheral portion. Incidentally, as shown in Fig. 18, when the refrigerant flows at approximately equal temperatures in the fluid passages 22, 24 of the mounting table 12, the center portion and the peripheral portion are approximately uniform (flat) in the mounting table 12. In the semiconductor wafer W on the mounting table 12, the peripheral portion is more likely to be higher than the central portion by heat radiation from the plasma or the chamber wall.

接著，參照第19圖說明第2例。該例子，是加工形成於半導體晶圓W的主面的多層膜，例如加工二層構造的導電層而形成微細寬的配線的情形。在該情形，將溫度控制模式從模式(B)(第6圖、第7圖)轉換成模式(D)(第10圖、第11圖)的順序較有效。Next, a second example will be described with reference to Fig. 19 . This example is a case where a multilayer film formed on the main surface of the semiconductor wafer W is processed, for example, a conductive layer having a two-layer structure is processed to form a fine-wide wiring. In this case, the order in which the temperature control mode is converted from the mode (B) (Fig. 6 and Fig. 7) to the mode (D) (Fig. 10, Fig. 11) is effective.

在該導電層的蝕刻中，作為蝕刻氣體使用如含有氯系鹵化物的混合氣體。又，如第19圖所示地，在載置台12的溫度控制中，最初藉由模式(B)將半導體晶圓W整體以所期望的設定溫度作成大約均勻的溫度分布。這時候，藉由高速昇溫功能，可將半導體晶圓W以高應答速度昇溫至第一設定溫度(例如60℃)。在該狀態，將蝕刻氣體導入室90內，而藉由高頻做電漿激勵，來加工上層導電層。In the etching of the conductive layer, a mixed gas containing a chlorine-based halide is used as an etching gas. Further, as shown in Fig. 19, in the temperature control of the mounting table 12, the semiconductor wafer W as a whole is initially formed into a substantially uniform temperature distribution at a desired set temperature by the mode (B). At this time, the semiconductor wafer W can be heated to a first set temperature (for example, 60 ° C) at a high response speed by the high-speed temperature rising function. In this state, the etching gas is introduced into the chamber 90, and the upper conductive layer is processed by the high frequency plasma excitation.

之後，暫時停止蝕刻氣體的導入，這次是將載置台12的溫度控制從模式(B)轉換成模式(D)。這時候，也藉由高速降溫功能，可將載置台12整體的溫度高速地下降至相當於基準溫度的第二設定溫度(例如30℃)。Thereafter, the introduction of the etching gas is temporarily stopped, and this time, the temperature control of the mounting table 12 is switched from the mode (B) to the mode (D). At this time, the temperature of the entire stage 12 can be lowered to a second set temperature (for example, 30 ° C) corresponding to the reference temperature at a high speed by the high-speed temperature lowering function.

如第19圖所示地，作成這樣子，藉由從模式(B)轉換至模式(D)，也以高速降溫半導體晶圓W整體。在該狀態下，再將蝕刻氣體導入室90內做電漿激勵來加工下層的導電層。如此，可加工形成高精度地被尺寸控制的層積配線。As shown in Fig. 19, by changing from mode (B) to mode (D), the entire semiconductor wafer W is also cooled at a high speed. In this state, the etching gas is introduced into the chamber 90 to be plasma-excited to process the underlying conductive layer. In this way, it is possible to form a laminated wiring that is dimensionally controlled with high precision.

其他，在電漿處理中，也可做各種溫度控制順序。第20圖是與第19圖相反的順序，最初在模式(D)下來加工多層模的第一層，之後在模式(B)下來加工下層膜。這時候，也可將載置台12的溫度從模式(D)的設定溫度(例如30℃)高速地轉換至模式(B)的設定溫度(例如60℃)。Others, in the plasma processing, various temperature control sequences can also be performed. Fig. 20 is a reverse sequence of Fig. 19, initially processing the first layer of the multilayer mold in mode (D), and then processing the lower film in mode (B). At this time, the temperature of the mounting table 12 may be switched from the set temperature of the mode (D) (for example, 30 ° C) to the set temperature of the mode (B) (for example, 60 ° C).

在第21圖表示第3例子。在電漿處理裝置中，如上所述地，載置台上的被處理基板，是在電漿處理中受到來自電漿或室壁的熱輻射或高密度電子的射入。此為意味著開始電漿處理之同時，亦即對於高頻電極開始高頻(RF)的供電，則以第21圖的一點鏈線144所示地使基板的溫度朝上昇的方向變動。尤其是，也作用著基於載置台的調溫之故，因而若經過一定時常數的時間π，則基板的溫度上昇(變動)是呈飽和而達到平衡溫度TW 。但是，在這種狀態，並無法在所有電漿處理的全期間內將基板溫度保持在設定處理溫度(製法的溫度條件)，而在電漿處理的再現性或良率上信賴性較低。The third example is shown in Fig. 21. In the plasma processing apparatus, as described above, the substrate to be processed on the stage is subjected to thermal radiation or high-density electrons from the plasma or the chamber wall during the plasma treatment. This means that the plasma processing is started, that is, when the high frequency (RF) power supply is started for the high frequency electrode, the temperature of the substrate is changed in the direction of the rise as indicated by the one-point chain line 144 of FIG. In particular, since the temperature adjustment by the mounting table is also applied, when the time π of a constant time constant elapses, the temperature rise (variation) of the substrate is saturated and reaches the equilibrium temperature T W . However, in this state, it is not possible to maintain the substrate temperature at the set processing temperature (temperature condition of the process) for all the plasma processing, and the reliability in the reproducibility or yield of the plasma treatment is low.

對於此，依照本發明，利用加熱單元16的急速昇降溫功能，被搬進室10內的半導體晶圓W被載置在載置台12上而開始所期望的電漿處理之前，以第21圖的實線148a、146所表示地藉由加熱單元16的急速昇溫功能來加熱流在配管26的冷媒而將各半導體晶圓Wn的溫度急速上昇至處理用的設定處理溫度(TW )。之後，開始電漿處理一直到其後的處理也結束為止，半導體晶圓Wn的溫度實質上被保持在設定處理溫度(TW )地藉由加熱單元16將對於流在配線26的冷媒的加熱以第21圖的實線148b所示地逐漸地減弱。如此，可修正基於來自電漿等的加熱的晶圓溫度的變動(上昇)，而可提高單張電漿處理的溫度管理、再現性、良率。Accordingly, according to the present invention, the semiconductor wafer W carried into the chamber 10 is placed on the mounting table 12 by the rapid temperature rise and fall function of the heating unit 16, and the desired plasma processing is started. As indicated by the solid lines 148a and 146, the refrigerant flowing through the pipe 26 is heated by the rapid temperature increasing function of the heating unit 16, and the temperature of each semiconductor wafer Wn is rapidly increased to the set processing temperature (T W ) for processing. Thereafter, the plasma treatment is started until the subsequent processing is completed, and the temperature of the semiconductor wafer Wn is substantially maintained at the set processing temperature (T W ) by the heating unit 16 to heat the refrigerant flowing through the wiring 26. It gradually weakens as indicated by the solid line 148b of Fig. 21. In this way, it is possible to correct the fluctuation (rise) of the temperature of the wafer heated by the plasma or the like, and it is possible to improve the temperature management, the reproducibility, and the yield of the single-plasma processing.

在上述實施形態中，在轉換溫度控制模式的順序，是將冷卻單元14的冷媒基準溫度維持在一定，惟本發明是並不被限定於將基準溫度保持在一定的形態者。以冷卻單元14的加熱機38也可任意地變更基準溫度，而併用基準溫度的可變控制與加熱單元16的昇降溫功能，可實現更多種類的溫度控制。In the above embodiment, the order of the temperature change control mode is such that the refrigerant reference temperature of the cooling unit 14 is maintained constant. However, the present invention is not limited to the case where the reference temperature is kept constant. The heating device 38 of the cooling unit 14 can also arbitrarily change the reference temperature, and the variable temperature control of the reference temperature and the temperature rise and fall function of the heating unit 16 can realize more kinds of temperature control.

作為一例，在第22圖表示三階段地降溫半導體晶圓W的例子。如上所述地，冷卻單元14是除了熱容量較大之外被設置在距載置台12相當距離的場所之故，因而在冷卻單元14變更基準溫度之後要追隨載置台12的溫度為止需要相當久的時間(應答速度慢)。As an example, FIG. 22 shows an example in which the semiconductor wafer W is cooled in three stages. As described above, the cooling unit 14 is disposed at a distance from the mounting table 12 in addition to the large heat capacity. Therefore, it takes a long time to follow the temperature of the mounting table 12 after the cooling unit 14 changes the reference temperature. Time (slow response).

如此，如第22圖所示地，在第一階段中，將基準溫度設定在較高溫度，將加熱單元16作成導通狀態並將冷媒溫度保持在比基準溫度還高的一定溫度。如此，將半導體晶圓W的溫度保持在第一設定溫度。之後，在第二階段，以冷卻單元14將基準溫度轉換成更低的基準溫度。但是，該基準溫度轉換的時常數較大之故，因而被供應於載置台12的冷媒溫度逐漸地降低，隨著此半導體晶圓W的溫度也逐漸地降低，而無法施行高速的溫度轉換。又，在第二階段中，一旦停止加熱單元16的加熱動作，藉由急速降溫將半導體晶圓W的溫度一下子下降至比第一設定溫度還低的第二設定溫度。然後，再開始加熱單元16的加熱動作，經調溫器54而配合基準溫度的時常數緩慢地上昇加熱溫度。如此，第二階段的期間中，半導體晶圓W是被保持在第二設定溫度。接著，在基準溫度安定在新基準值之時點，停止加熱單元16的加熱動作。藉由該急速降溫，可將半導體晶圓W的溫度從第二設定溫度一下子降至對應於新基準溫度的第三設定溫度。Thus, as shown in Fig. 22, in the first stage, the reference temperature is set to a higher temperature, the heating unit 16 is turned on, and the refrigerant temperature is maintained at a certain temperature higher than the reference temperature. In this manner, the temperature of the semiconductor wafer W is maintained at the first set temperature. Thereafter, in the second stage, the reference temperature is converted to a lower reference temperature by the cooling unit 14. However, since the time constant of the reference temperature conversion is large, the temperature of the refrigerant supplied to the mounting table 12 is gradually lowered, and the temperature of the semiconductor wafer W is gradually lowered, so that high-speed temperature conversion cannot be performed. Further, in the second stage, once the heating operation of the heating unit 16 is stopped, the temperature of the semiconductor wafer W is suddenly lowered to a second set temperature lower than the first set temperature by rapid cooling. Then, the heating operation of the heating unit 16 is restarted, and the heating temperature is gradually increased by the temperature constant of the reference temperature by the temperature regulator 54. Thus, during the second phase, the semiconductor wafer W is maintained at the second set temperature. Next, when the reference temperature is stabilized at the new reference value, the heating operation of the heating unit 16 is stopped. By the rapid cooling, the temperature of the semiconductor wafer W can be lowered from the second set temperature to the third set temperature corresponding to the new reference temperature.

作成如以上地，將半導體晶圓W的溫度在第一階段保持在例如90℃，在第二階段保持在例如60℃，而在第三階段保持在例如30℃，例如高精度地可進行三層膜的蝕刻加工。或是也可將單層膜加工成所期望的斷面形狀。As described above, the temperature of the semiconductor wafer W is maintained at, for example, 90 ° C in the first stage, at 60 ° C in the second stage, and maintained at, for example, 30 ° C in the third stage, for example, three times with high precision. Etching of the film. Alternatively, the single layer film can be processed into the desired cross-sectional shape.

第23圖是表示與第22圖相反的溫度控制順序，為三階段地昇溫半導體晶圓W的例子。依照該順序，可將半導體晶圓W的溫度在第一階段保持在如30℃，在第二階段保持在如60℃，而在第三階段保持在如90℃，與第22圖的例子同樣地高精度地可進行多層膜的蝕刻加工。Fig. 23 is a view showing an example of the temperature control sequence opposite to Fig. 22, in which the semiconductor wafer W is heated in three stages. In this order, the temperature of the semiconductor wafer W can be maintained at, for example, 30 ° C in the first stage, at 60 ° C in the second stage, and maintained at, for example, 90 ° C in the third stage, as in the example of FIG. The etching process of the multilayer film can be performed with high precision.

在第24圖，表示控制部140(控制器20)的構成例。該構成例的控制部140(控制器20)是具有：經由匯流排150被連接的處理器(CPU)152、記憶體(RAM)154、程式儲存裝置(HDD)156、軟碟驅動器或光碟等的碟片驅動器(DRV)158、鍵盤或滑鼠等的輸入元件(KEY)160、顯示裝置(DIS)162、網路介面(COM)164，及周邊介面(I/F)166。Fig. 24 shows an example of the configuration of the control unit 140 (controller 20). The control unit 140 (controller 20) of this configuration example has a processor (CPU) 152, a memory (RAM) 154, a program storage device (HDD) 156, a floppy disk drive, a compact disk, and the like connected via the bus bar 150. A disk drive (DRV) 158, an input component (KEY) 160 of a keyboard or mouse, a display device (DIS) 162, a network interface (COM) 164, and a peripheral interface (I/F) 166.

處理器(CPU)152，是由被裝填於碟片驅動器(DRV)158的FD或是光碟等的記憶媒體168讀取所需要的程式的碼，而儲存於HDD156。或是，從網路經由網路介面164也可下載所需要的程式。又，處理器(CPU)152是將在各階段或各場面所需要的程式的碼從HDD156展開在暫時記憶體(RAM)154上而實行各步驟，進行所需要的演算處理而經由周邊介面166來控制裝置內的各部(尤其是冷卻單元14、加熱單元16、流路轉換單元18等)。用以實施在上述第一及第二實施形態所說明的載置台溫度控制方法的程式是都在該電腦系統被實行。The processor (CPU) 152 is stored in the HDD 156 by a code for reading a desired program from a memory medium 168 such as an FD or a disc loaded in the disc drive (DRV) 158. Alternatively, the required program can be downloaded from the network via the network interface 164. Further, the processor (CPU) 152 expands the code of the program required for each stage or each scene from the HDD 156 to the temporary memory (RAM) 154, and performs each step to perform necessary calculation processing via the peripheral interface 166. The various parts within the device (especially the cooling unit 14, the heating unit 16, the flow path conversion unit 18, etc.) are controlled. The programs for implementing the stage temperature control method described in the first and second embodiments described above are all executed in the computer system.

以上，說明本發明的最適當實施形態，惟上述的實施形態是並不限定本發明者。在該項技術者，在具體性實施形態中未超越本發明的技術思想及技術範圍下可施以各種變形、變更。The most suitable embodiments of the present invention have been described above, but the above embodiments are not intended to limit the inventors. In the specific embodiments, various modifications and changes can be made without departing from the spirit and scope of the invention.

例如，在流路轉換單元18中，也可將一組電磁閥62、64置換成具有被連接於第一入口18a的第一埠，及分別被連接於第一及第二出口18c、18d的第二及第三埠的一個方向轉換閥。又，也可將一組電磁閥66、68置換成具有被連接於第二入口18a的第一埠，及分別被連接於第一及第二出口18c、18d的第二及第三埠的一個方向轉換閥。理所當然，這時候，有無法得到模式(C)、(F)的限制。For example, in the flow path conversion unit 18, a group of solenoid valves 62, 64 may be replaced with a first port connected to the first inlet 18a and connected to the first and second outlets 18c, 18d, respectively. One direction switching valve of the second and third turns. Alternatively, a plurality of solenoid valves 66, 68 may be replaced with a first weir connected to the second inlet 18a and one of the second and third weirs connected to the first and second outlets 18c, 18d, respectively. Directional switching valve. Of course, at this time, there are no restrictions on modes (C) and (F).

又，在上述實施形態中代替加熱單元16，在配管26途中也可使用冷卻冷媒的冷卻單元。在這時候，例如模式(A)對於載置台12上的流路轉換單元W的溫度分布，可得到如上下地反轉第17圖的輪廓。或是，可將由冷卻單元14以基準溫度所送出的冷媒最初流在載置台12的周邊部領域的冷媒通路24，而以串聯地之後流在中心部領域22的方式。又，在載置台12也可將具有個別入口與出口的冷媒通路設置三系統以上的構成。Further, in the above embodiment, instead of the heating unit 16, a cooling unit that cools the refrigerant may be used in the middle of the piping 26. At this time, for example, in the mode (A), the temperature distribution of the flow path converting unit W on the stage 12 can be obtained by inverting the outline of Fig. 17 as described above. Alternatively, the refrigerant sent from the cooling unit 14 at the reference temperature may first flow in the refrigerant passage 24 in the peripheral portion of the mounting table 12, and may flow in the center portion 22 in series. Further, the mounting table 12 may have a configuration in which three or more refrigerant passages having individual inlets and outlets are provided.

又，本發明是除了如上述實施形態的平行平板型電漿處裝置之外，還可同樣地適用在螺旋波電漿激勵型處理裝置，ECR(Electron Cyclotron Resonance)電漿激勵型處理裝置，μ波電漿激勵型處理裝置、ICP(Inductively Coupled Plasma)電漿激勵型處理裝置等。又，除了蝕刻裝置之外也可同樣地適用在成膜裝置，例如也可適用化學氣相成長(CVD)裝置。電漿CVD裝置、濺鍍裝置、MBE裝置、蒸鍍裝置等。又，本發明是也可同樣地適用在離子研磨，基於FIB的被處理物的加工，絕緣基板表面的電漿洗淨，或是電漿洗淨等者。Further, the present invention is also applicable to a spiral wave plasma excitation type processing apparatus and an ECR (Electron Cyclotron Resonance) plasma excitation type processing apparatus, in addition to the parallel flat type plasma apparatus according to the above embodiment. A wave plasma excitation type processing device, an ICP (Inductively Coupled Plasma) plasma excitation type processing device, and the like. Further, the film forming apparatus can be similarly applied in addition to the etching apparatus. For example, a chemical vapor phase growth (CVD) apparatus can also be applied. A plasma CVD apparatus, a sputtering apparatus, an MBE apparatus, a vapor deposition apparatus, and the like. Further, the present invention is also applicable to ion milling, processing of a material to be processed based on FIB, plasma cleaning on the surface of an insulating substrate, or plasma cleaning.

又，本發明的被處理基板是並不被限定於半導體晶圓者，而平面板．顯示器用各種基板、光罩、CD基板等也可以。Moreover, the substrate to be processed of the present invention is not limited to a semiconductor wafer, but a planar board. Various substrates, masks, CD substrates, and the like may be used for the display.

10．．．室10. . . room

12．．．載置台12. . . Mounting table

14．．．冷卻單元14. . . Cooling unit

16．．．加熱單元16. . . Heating unit

18．．．流路轉換單元18. . . Flow conversion unit

20．．．控制器20. . . Controller

22．．．載置台的中心部領域的冷媒通路twenty two. . . Refrigerant path in the center of the stage

24．．．載置台的周邊部領域的流路轉換單元twenty four. . . Flow path conversion unit in the peripheral portion of the stage

26、28、30、32、58、60．．．配管26, 28, 30, 32, 58, 60. . . Piping

34．．．泵34. . . Pump

36．．．冷凍機36. . . freezer

38．．．加熱機38. . . Heating machine

40．．．線內加熱器40. . . Inline heater

42．．．電源42. . . power supply

44．．．流量控制閥44. . . Flow control valve

54．．．調溫器54. . . Thermostats

62、64、66、68．．．開關閥62, 64, 66, 68. . . Switch valve

90．．．室90. . . room

110．．．高頻電源110. . . High frequency power supply

124．．．處理氣體供應部124. . . Process gas supply

130．．．靜電吸盤130. . . Electrostatic chuck

136．．．傳熱氣體供應部136. . . Heat transfer gas supply

140．．．控制部140. . . Control department

第1圖是表示本發明的一實施形態的載置台溫度控制裝置的構成的方塊圖。Fig. 1 is a block diagram showing the configuration of a stage temperature control device according to an embodiment of the present invention.

第2圖是表示上述載置台溫度控制裝置的加熱單元的線內加熱器的一例的立體圖。Fig. 2 is a perspective view showing an example of an in-line heater of a heating unit of the stage temperature control device.

第3圖是表示上述加熱單元的冷媒昇降溫特性的圖表。Fig. 3 is a graph showing the temperature rise and fall characteristics of the refrigerant in the heating unit.

第4圖是表示在上述載置台溫度控制裝置中用以得到溫度控制模式(A)的各部狀態的圖式。Fig. 4 is a view showing the state of each unit for obtaining the temperature control mode (A) in the stage temperature control device.

第5圖是模式地表示溫度控制模式(A)的整體流路系統的圖式。Fig. 5 is a view schematically showing the overall flow path system of the temperature control mode (A).

第6圖是表示在上述載置台溫度控制裝置中用以得到溫度控制模式(B)的各部狀態的圖式。Fig. 6 is a view showing the state of each unit for obtaining the temperature control mode (B) in the stage temperature control device.

第7圖是模式地表示溫度控制模式(B)的整體流路系統的圖式。Fig. 7 is a view schematically showing the overall flow path system of the temperature control mode (B).

第8圖是表示在上述載置台溫度控制裝置中用以得到溫度控制模式(C)的各部狀態的圖式。Fig. 8 is a view showing the state of each unit for obtaining the temperature control mode (C) in the stage temperature control device.

第9圖是模式地表示溫度控制模式(C)的整體流路系統的圖式。Fig. 9 is a view schematically showing the overall flow path system of the temperature control mode (C).

第10圖是表示在上述載置台溫度控制裝置中用以得到溫度控制模式(D)的各部狀態的圖式。Fig. 10 is a view showing the state of each unit for obtaining the temperature control mode (D) in the stage temperature control device.

第11圖是模式地表示溫度控制模式(D)的整體流路系統的圖式。Fig. 11 is a view schematically showing the overall flow path system of the temperature control mode (D).

第12圖是表示在上述載置台溫度控制裝置中用以得到溫度控制模式(E)的各部狀態的圖式。Fig. 12 is a view showing the state of each unit for obtaining the temperature control mode (E) in the stage temperature control device.

第13圖是模式地表示溫度控制模式(E)的整體流路系統的圖式。Fig. 13 is a view schematically showing the overall flow path system of the temperature control mode (E).

第14圖是表示在上述載置台溫度控制裝置中用以得到溫度控制模式(F)的各部狀態的圖式。Fig. 14 is a view showing the state of each unit for obtaining the temperature control mode (F) in the stage temperature control device.

第15圖是模式地表示溫度控制模式(F)的整體流路系統的圖式。Fig. 15 is a view schematically showing the overall flow path system of the temperature control mode (F).

第16圖是表示本發明的一實施形態的電漿蝕刻裝置的構成的斷面圖。Figure 16 is a cross-sectional view showing the configuration of a plasma etching apparatus according to an embodiment of the present invention.

第17圖是表示一實施例的載置台及半導體晶圓的溫度分布圖式。Fig. 17 is a view showing the temperature distribution pattern of the mounting table and the semiconductor wafer of the embodiment.

第18圖是表示一參考例的載置台及半導體晶圓的溫度分布圖式。Fig. 18 is a view showing the temperature distribution pattern of the mounting table and the semiconductor wafer of a reference example.

第19圖是表示一實施例的溫度控制模式轉換順序的圖式。Fig. 19 is a view showing a temperature control mode switching sequence of an embodiment.

第20圖是表示一實施例的溫度控制模式轉換順序的圖式。Figure 20 is a diagram showing the temperature control mode switching sequence of an embodiment.

第21圖是表示一實施例的被處理體溫度控制方法的圖式。Fig. 21 is a view showing a method of controlling the temperature of the object to be processed according to the embodiment.

第22圖是表示一實施例的溫度控制模式轉換順序的圖式。Fig. 22 is a view showing a temperature control mode switching sequence of an embodiment.

第23圖是表示一實施例的溫度控制模式轉換順序的圖式。Figure 23 is a diagram showing the temperature control mode switching sequence of an embodiment.

第24圖是表示實施例的控制部(控制器)的構成的方塊圖。Fig. 24 is a block diagram showing the configuration of a control unit (controller) of the embodiment.

10．．．室10. . . room

12．．．載置台12. . . Mounting table

14．．．冷卻單元14. . . Cooling unit

14a．．．送出口14a. . . Send out

14b．．．反饋口14b. . . Feedback port

16．．．加熱單元16. . . Heating unit

18．．．流路轉換單元18. . . Flow conversion unit

18a．．．第一入口18a. . . First entrance

18b．．．第二入口18b. . . Second entrance

18c．．．第一出口18c. . . First exit

18d．．．第二出口18d. . . Second exit

20．．．控制器20. . . Controller

22．．．載置台的中心部領域的冷媒通路twenty two. . . Refrigerant path in the center of the stage

22a．．．入口22a. . . Entrance

22b．．．出口22b. . . Export

24．．．載置台的周邊部領域的流路轉換單元twenty four. . . Flow path conversion unit in the peripheral portion of the stage

24a．．．入口24a. . . Entrance

24b．．．出口24b. . . Export

26、28、30、32、58、60．．．配管26, 28, 30, 32, 58, 60. . . Piping

40．．．線內加熱器40. . . Inline heater

42．．．電源42. . . power supply

44．．．流量控制閥44. . . Flow control valve

52．．．溫度感測器52. . . Temperature sensor

54．．．調溫器54. . . Thermostats

56．．．流量感測器56. . . Flow sensor

62、64、66、68．．．開關閥62, 64, 66, 68. . . Switch valve

W．．．半導體晶圓W. . . Semiconductor wafer

N1 、N2 ．．．流路分岐點N 1 , N 2 . . . Flow path

Claims (24)

一種載置台溫度控制裝置，屬於用以控制載置被處理體的載置台溫度的載置台溫度控制裝置，其特徵為具有：具有設置於上述載置台的各該個別入口及出口的第一及第二冷媒通路；為了將冷媒循環供給於上述第一及第二冷媒通路，具有：於上述第一冷媒通路的入口經由第一流路被連接的送出口，及於上述第二冷媒通路的出口經由第二流路被連接的反饋口，將反饋於上述反饋口的冷媒恢復成基準溫度而由上述送出口送出的冷媒循環器；在上述第一流路途中，將冷媒溫度從上述基準溫度上昇或下降至所期望的設定溫度的冷媒溫度控制部；具有：於上述第一冷媒通路出口經由第三流路被連接的第一埠，及於設置於比上述第一流路的上述冷媒溫度控制部還上游側的第一流路分岐點經由第四流路被連接的第二埠，及於上述第二冷媒通路入口經由第五流路被連接的第三埠，及於設置於上述第二流路的第二流路分岐點經由第六流路被連接的第四埠，在上述第一、第二、第三及第四埠之間可執行流路的導通‧斷開及變更的流路轉換部；以及控制上述流路轉換部內的上述流路的導通‧斷開或變更的流路控制部。 A mounting table temperature control device is a stage temperature control device for controlling a temperature of a mounting table on which a workpiece is placed, and has a first and a plurality of the respective inlets and outlets provided in the mounting table a refrigerant passage for supplying the refrigerant to the first and second refrigerant passages, wherein the inlet of the first refrigerant passage is connected to the outlet via the first passage, and the outlet of the second refrigerant passage is connected to the second refrigerant passage a feedback port to which the second flow path is connected, a refrigerant circulator that is fed back to the feed port by the refrigerant fed back to the feedback port, and a refrigerant circulator that is sent from the delivery port; and the refrigerant temperature is increased or decreased from the reference temperature to the first flow path a refrigerant temperature control unit that has a desired set temperature; a first port connected to the first refrigerant passage outlet via a third flow path; and a first side connected to the refrigerant temperature control unit of the first flow path The first flow branching point is connected to the second port connected via the fourth flow path, and the second refrigerant path inlet is connected via the fifth flow path And a third turn connected to the second flow path of the second flow path via the sixth flow path, between the first, second, third and fourth turns a flow path conversion unit that performs conduction, disconnection, and change of the flow path, and a flow path control unit that controls conduction, disconnection, or change of the flow path in the flow path conversion unit. 如申請專利範圍第1項所述的載置台溫度控制裝 置，其中，上述流路轉換部具有：被連接於上述第一埠與上述第三埠之間的第一開關閥，及被連接於上述第一埠與上述第四埠之間的第二開關閥，及被連接於上述第二埠與上述第三埠之間的第三開關閥，及被連接於上述第二埠與上述第四埠之間的第四開關閥；上述流路控制部控制上述第一、第二、第三及第四開關閥的導通‧斷開。 The temperature control device of the mounting table as described in item 1 of the patent application scope The flow path conversion unit includes: a first switching valve connected between the first turn and the third turn, and a second switch connected between the first turn and the fourth turn a valve, and a third switching valve connected between the second crucible and the third crucible, and a fourth switching valve connected between the second crucible and the fourth crucible; the flow path control unit controls The first, second, third, and fourth switching valves are turned on and off. 如申請專利範圍第1項所述的載置台溫度控制裝置，其中，上述流路轉換部具有：被連接於上述第一埠與上述第三及第四埠之間的第一方向轉換閥，及被連接於上述第二埠與上述第三及第四埠之間的第二方向轉換閥；上述流路控制部控制上述第一及第二方向轉換閥內的各該流路狀態。 The stage temperature control device according to claim 1, wherein the flow path conversion unit includes a first direction switching valve connected between the first turn and the third and fourth turns, and a second direction switching valve connected between the second turn and the third and fourth turns; the flow path control unit controls each of the flow path states in the first and second direction change valves. 如申請專利範圍第1項所述的載置台溫度控制裝置，其中，上述冷媒溫度控制部具有：安裝於上述第一流路的線內加熱器；在比上述線內加熱器還下游側檢測上述第一流路內的冷媒溫度的溫度感測器；以及控制上述線內加熱器的發熱量成為使得藉由上述溫度感測器所檢測的冷媒溫度一致於上述設定溫度的溫度控制部。 The stage temperature control device according to the first aspect of the invention, wherein the refrigerant temperature control unit includes: an in-line heater attached to the first flow path; and detecting the first side on a downstream side of the in-line heater a temperature sensor for the refrigerant temperature in the first-class road; and a temperature control unit that controls the amount of heat generated by the in-line heater so that the temperature of the refrigerant detected by the temperature sensor is equal to the set temperature. 如申請專利範圍第4項所述的載置台溫度控制裝置，其中，上述線內加熱器在接近於上述載置台的位置來加熱上述第一流路內的冷媒。 The stage temperature control device according to claim 4, wherein the in-line heater heats the refrigerant in the first flow path at a position close to the mounting table. 如申請專利範圍第1項所述的載置台溫度控制裝置，其中，於比上述第一流路的上述第一流路分岐點還下游側設有用以可變控制冷媒流量的流量控制閥。 The stage temperature control device according to the first aspect of the invention, wherein the flow rate control valve for variably controlling the flow rate of the refrigerant is provided downstream of the first flow path branch point of the first flow path. 如申請專利範圍第1項所述的載置台溫度控制裝置，其中，上述第一冷媒通路與上述第二冷媒通路，是對於上述載置台的中心配置成同心圓狀。 The stage temperature control device according to the first aspect of the invention, wherein the first refrigerant passage and the second refrigerant passage are arranged concentrically with respect to a center of the mounting table. 如申請專利範圍第1項所述的載置台溫度控制裝置，其中，上述第一冷媒通路設在上述載置台的中心部領域；上述第二冷媒通路設在上述載置台的周邊部領域。 The stage temperature control device according to claim 1, wherein the first refrigerant passage is provided in a central portion of the mounting table, and the second refrigerant passage is provided in a peripheral portion of the mounting table. 如申請專利範圍第1項所述的載置台溫度控制裝置，其中，上述冷媒循環器具有：用以循環冷媒的泵，及用以冷凍剛反饋之後的冷媒的冷凍部，及將冷凍後的冷媒加熱至所定基準溫度的加熱部。 The stage temperature control device according to claim 1, wherein the refrigerant circulator has a pump for circulating a refrigerant, a freezing unit for freezing the refrigerant immediately after the feedback, and a refrigerant after freezing. Heating to a heating portion of a predetermined reference temperature. 一種載置台溫度控制方法，屬於藉由冷媒循環器將冷媒循環供給於設置在載置被處理體的載置台的第一及第二冷媒通路，並控制上述載置台的溫度的載置台溫度控制方法，其特徵為具有：在上述冷媒循環器的送出口與反饋口之間並聯地連接上述第一冷媒通路與上述第二冷媒通路，將由上述冷媒循環器以基準溫度所送出的冷媒中一部分由上述基準溫度上昇或下降至所期望的設定溫度之後，流進上述第一冷媒通 路，並將剩餘之冷媒實質上仍以上述基準溫度流進上述第二冷媒通路而進行上述載置台的溫度控制的第一溫度控制模式，又具有：在上述冷媒循環器的送出口與反饋口之間並聯地連接上述第一冷媒通路與上述第二冷媒通路，將由上述冷媒循環器所送出的冷媒中一部分實質上仍以上述基準溫度流進上述第一冷媒通路，並將剩餘之冷媒實質上仍以上述基準溫度流進上述第二冷媒通路而進行上述載置台的溫度控制的第二溫度控制模式；因應於上述被處理體的加工條件而在上述第一溫度控制模式與上述第二溫度控制模式之間進行轉換。 A method for controlling the temperature of a stage, which is a stage temperature control method for supplying a refrigerant to a first and second refrigerant passages provided on a mounting table on which a workpiece is placed by a refrigerant circulator, and controlling the temperature of the mounting table The first refrigerant passage and the second refrigerant passage are connected in parallel between the delivery port of the refrigerant circulator and the feedback port, and a part of the refrigerant sent by the refrigerant circulator at the reference temperature is After the reference temperature rises or falls to a desired set temperature, flows into the first refrigerant medium a first temperature control mode in which the remaining refrigerant substantially flows into the second refrigerant passage at the reference temperature to perform temperature control of the mounting table, and has a delivery port and a feedback port of the refrigerant circulator The first refrigerant passage and the second refrigerant passage are connected in parallel, and a part of the refrigerant sent from the refrigerant circulator flows into the first refrigerant passage substantially at the reference temperature, and the remaining refrigerant is substantially a second temperature control mode in which the temperature of the mounting table is controlled by flowing into the second refrigerant passage at the reference temperature; and the first temperature control mode and the second temperature control in response to processing conditions of the workpiece Convert between modes. 如申請專利範圍第10項所述的載置台溫度控制方法，其中，又具有：在上述冷媒循環器的送出口與反饋口之間串聯地連接上述第一冷媒通路與上述第二冷媒通路，將上述冷媒循環器所送出的冷媒中一部分由上述基準溫度上昇或下降至所期望的設定溫度之後依序流進上述第一及第二冷媒通路，並將剩餘之冷媒予以旁通而進行上述載置台的溫度控制的第三溫度控制模式；因應於上述被處理體的加工條件而在上述第一溫度控制模式與上述第二溫度控制模式及上述第三溫度控制模式之間進行轉換。 The stage temperature control method according to claim 10, further comprising: connecting the first refrigerant passage and the second refrigerant passage in series between a delivery port of the refrigerant circulator and a feedback port; A part of the refrigerant sent from the refrigerant circulator is sequentially introduced into the first and second refrigerant passages after the reference temperature is increased or decreased to a desired set temperature, and the remaining refrigerant is bypassed to perform the mounting table. The temperature control third temperature control mode converts between the first temperature control mode and the second temperature control mode and the third temperature control mode in response to processing conditions of the object to be processed. 如申請專利範圍第10項所述的載置台溫度控制方法，其中， 又具有：在上述冷媒循環器的送出口與反饋口之間串聯地連接上述第一冷媒通路與上述第二冷媒通路，將由上述冷媒循環器所送出的冷媒全部由上述基準溫度上昇或下降至所期望的設定溫度之後依序流進上述第一及第二冷媒通路而進行上述載置台的溫度控制的第四溫度控制模式；因應於上述被處理體的加工條件而在上述第一溫度控制模式與上述第二溫度控制模式及上述第四溫度控制模式之間進行轉換。 The method for controlling the temperature of the mounting table according to claim 10, wherein Further, the first refrigerant passage and the second refrigerant passage are connected in series between the delivery port of the refrigerant circulator and the feedback port, and all of the refrigerant sent by the refrigerant circulator is raised or lowered from the reference temperature to a fourth temperature control mode in which the first and second refrigerant passages are sequentially flowed to perform the temperature control of the mounting table after the desired set temperature; and in the first temperature control mode in response to the processing condition of the object to be processed The second temperature control mode and the fourth temperature control mode are switched. 如申請專利範圍第11項所述的載置台溫度控制方法，其中，又具有：在上述冷媒循環器的送出口與反饋口之間串聯地連接上述第一冷媒通路與上述第二冷媒通路，將由上述冷媒循環器所送出的冷媒中一部分實質上仍以上述基準溫度依序流進上述第一及第二冷媒通路，並將剩餘之冷媒予以旁通而進行上述載置台的溫度控制的第五溫度控制模式；因應於上述被處理體的加工條件而在上述第一溫度控制模式與上述第三溫度控制模式及上述第五溫度控制模式之間進行轉換。 The stage temperature control method according to claim 11, further comprising: connecting the first refrigerant passage and the second refrigerant passage in series between a delivery port of the refrigerant circulator and a feedback port; a part of the refrigerant sent from the refrigerant circulator is substantially still flowing into the first and second refrigerant passages at the reference temperature, and the remaining refrigerant is bypassed to perform a temperature control of the temperature of the mounting table. a control mode that converts between the first temperature control mode and the third temperature control mode and the fifth temperature control mode in response to processing conditions of the object to be processed. 如申請專利範圍第12項所述的載置台溫度控制方法，其中，又具有：在上述冷媒循環器的送出口與反饋口之間串聯地連接上述第一冷媒通路與上述第二冷媒通路，將由上述冷媒循環器所送出的冷媒中一部分實質上仍以上述基準 溫度依序流進上述第一及第二冷媒通路，並將剩餘之冷媒予以旁通而進行上述載置台的溫度控制的第五溫度控制模式；因應於上述被處理體的加工條件而在上述第一溫度控制模式與上述第四溫度控制模式及上述第五溫度控制模式之間進行轉換。 The stage temperature control method according to claim 12, further comprising: connecting the first refrigerant passage and the second refrigerant passage in series between a delivery port of the refrigerant circulator and a feedback port; Some of the refrigerant sent by the refrigerant circulator is still substantially based on the above criteria. a fifth temperature control mode in which the temperature flows in the first and second refrigerant passages in sequence, and the remaining refrigerant is bypassed to perform temperature control of the mounting table; and in accordance with the processing conditions of the workpiece A temperature control mode is switched between the fourth temperature control mode and the fifth temperature control mode. 如申請專利範圍第11項所述的載置台溫度控制方法，其中，又具有：在上述冷媒循環器的送出口與反饋口之間串聯地連接上述第一冷媒通路與上述第二冷媒通路，將由上述冷媒循環器所送出的冷媒全部實質上仍以上述基準溫度依序流進上述第一及第二冷媒通路而進行上述載置台的溫度控制的第六溫度控制模式；因應於上述被處理體的加工條件而在上述第一溫度控制模式與上述第三溫度控制模式及上述第六溫度控制模式之間進行轉換。 The stage temperature control method according to claim 11, further comprising: connecting the first refrigerant passage and the second refrigerant passage in series between a delivery port of the refrigerant circulator and a feedback port; a sixth temperature control mode in which all of the refrigerants sent from the refrigerant circulators are substantially continuously flowed into the first and second refrigerant passages at the reference temperature to control the temperature of the mounting table; The processing condition is switched between the first temperature control mode and the third temperature control mode and the sixth temperature control mode. 如申請專利範圍第12項所述的載置台溫度控制方法，其中，又具有：在上述冷媒循環器的送出口與反饋口之間串聯地連接上述第一冷媒通路與上述第二冷媒通路，將由上述冷媒循環器所送出的冷媒全部實質上仍以上述基準溫度依序流進上述第一及第二冷媒通路而進行上述載置台的溫度控制的第六溫度控制模式；因應於上述被處理體的加工條件而在上述第一溫度控 制模式與上述第四溫度控制模式及上述第六溫度控制模式之間進行轉換。 The stage temperature control method according to claim 12, further comprising: connecting the first refrigerant passage and the second refrigerant passage in series between a delivery port of the refrigerant circulator and a feedback port; a sixth temperature control mode in which all of the refrigerants sent from the refrigerant circulators are substantially continuously flowed into the first and second refrigerant passages at the reference temperature to control the temperature of the mounting table; Processing conditions and above the first temperature control The mode is switched between the fourth temperature control mode and the sixth temperature control mode. 一種載置台溫度控制方法，屬於藉由冷媒循環器將冷媒循環供給於設置在載置被處理體的載置台的第一及第二冷媒通路並控制上述載置台的溫度的載置台溫度控制方法，其特徵為：在上述冷媒循環器的送出口與反饋口之間並聯地連接於上述第一冷媒通路與上述第二冷媒通路，將由上述冷媒循環器以基準溫度所送出的冷媒中一部分由上述基準溫度上昇或下降至所期望的設定溫度之後流進上述第一冷媒通路，並將剩餘之冷媒實質上仍以上述基準溫度流進上述第二冷媒通路而進行上述載置台的溫度控制的第一溫度控制模式；在上述冷媒循環器的送出口與反饋口之間並聯地連接上述第一冷媒通路與上述第二冷媒通路，將由上述冷媒循環器所送出的冷媒中一部分實質上仍以上述基準溫度流進上述第一冷媒通路，並將剩餘之冷媒實質上仍以上述基準溫度流進上述第二冷媒通路而進行上述載置台的溫度控制的第二溫度控制模式；在上述冷媒循環器的送出口與反饋口之間串聯地連接上述第一冷媒通路與上述第二冷媒通路，將上述冷媒循環器所送出的冷媒中一部分由上述基準溫度上昇或下降至所期望的設定溫度之後依序流進上述第一及第二冷媒通路，並將剩餘之冷媒予以旁通而進行上述載置台的溫度控制的 第三溫度控制模式；在上述冷媒循環器的送出口與反饋口之間串聯地連接上述第一冷媒通路與上述第二冷媒通路，將由上述冷媒循環器所送出的冷媒中一部分實質上仍以上述基準溫度依序流進上述第一及第二冷媒通路，並將剩餘之冷媒予以旁通而進行上述載置台的溫度控制的第五溫度控制模式；在上述第一模式，與上述第二、第三、第五模式的至少一種模式之間進行轉換。 A method for controlling the temperature of a stage, which is a stage temperature control method in which a refrigerant is circulated by a refrigerant circulator to a first and second refrigerant passages provided on a stage on which a workpiece is placed, and the temperature of the stage is controlled. The first refrigerant passage and the second refrigerant passage are connected in parallel between the delivery port and the feedback port of the refrigerant circulator, and a part of the refrigerant sent by the refrigerant circulator at the reference temperature is used as the reference. a temperature at which the temperature rises or falls to a desired set temperature, flows into the first refrigerant passage, and the remaining refrigerant substantially flows into the second refrigerant passage at the reference temperature to perform temperature control of the stage a control mode; the first refrigerant passage and the second refrigerant passage are connected in parallel between the delivery port and the feedback port of the refrigerant circulator, and a part of the refrigerant sent by the refrigerant circulator is substantially still flowing at the reference temperature Advancing into the first refrigerant passage, and flowing the remaining refrigerant substantially at the above reference temperature a second temperature control mode in which the temperature of the mounting stage is controlled by the second refrigerant passage; the first refrigerant passage and the second refrigerant passage are connected in series between the delivery port of the refrigerant circulator and the feedback port, and the refrigerant is connected A part of the refrigerant sent from the circulator is sequentially introduced into the first and second refrigerant passages after the reference temperature rises or falls to a desired set temperature, and the remaining refrigerant is bypassed to perform the temperature of the stage. controlling a third temperature control mode; the first refrigerant passage and the second refrigerant passage are connected in series between the delivery port of the refrigerant circulator and the feedback port, and a part of the refrigerant sent by the refrigerant circulator is substantially still a fifth temperature control mode in which the reference temperature flows into the first and second refrigerant passages in sequence, and the remaining refrigerant is bypassed to perform temperature control of the mounting table; and in the first mode, the second and the second 3. Conversion between at least one mode of the fifth mode. 一種處理裝置，其特徵為具有：可減壓之收容載置被處理體的載置台的室；用以控制上述載置台的溫度的如申請專利範圍第1項所述的載置台溫度控制裝置；用以排氣上述室內的排氣部；以及於上述室內供給處理氣體的處理氣體供給部。 A processing apparatus comprising: a chamber for accommodating a mounting table on which a target object is placed under pressure; and a stage temperature control device according to claim 1 for controlling a temperature of the mounting table; An exhaust portion for exhausting the chamber; and a processing gas supply unit for supplying a processing gas to the chamber. 如申請專利範圍第18項所述的處理裝置，其中，於上述室內具有用以生成或供給上述處理氣體的電漿的電漿源。 The processing apparatus according to claim 18, wherein the chamber has a plasma source for generating or supplying the plasma of the processing gas. 如申請專利範圍第19項所述的處理裝置，其中，於上述載置台具有用以供電第一高頻率的第一高頻率供電部。 The processing apparatus according to claim 19, wherein the mounting stage has a first high frequency power supply unit for supplying a first high frequency. 如申請專利範圍第20項所述的處理裝置，其中，具有在上述室內與上述載置台相對的相對電極，及於上述相對電極用以供電第二高頻率的第二高頻率供電部。 The processing apparatus according to claim 20, further comprising: a counter electrode facing the mounting table in the chamber; and a second high frequency power supply unit for supplying the second high frequency to the counter electrode. 如申請專利範圍第18項所述的處理裝置，其中， 上述載置台具有：用以靜電吸附上述被處理體的靜電吸盤，及在上述被處理體的背面與載置面之間供給傳熱氣體的傳熱氣體供給路。 The processing device of claim 18, wherein The mounting table has an electrostatic chuck for electrostatically adsorbing the object to be processed, and a heat transfer gas supply path for supplying a heat transfer gas between the back surface of the object to be processed and the mounting surface. 如申請專利範圍第19項所述的處理裝置，其中，在對於被處理體開始所期望的電漿處理之前，藉由上述冷媒溫度控制部來加熱流在上述第一流路的冷媒而使上述被處理體的溫度上昇至處理用的設定處理溫度；從開始上述電漿處理一直到其以後也結束處理為止，藉由上述冷媒溫度控制部逐漸地減弱對於流在上述第一流路的冷媒之加熱，使上述被處理體的溫度實質上被保持在上述設定處理溫度。 The processing apparatus according to claim 19, wherein the refrigerant temperature control unit heats the refrigerant flowing through the first flow path before the desired plasma treatment is started, so that the The temperature of the treatment body is raised to the set processing temperature for the treatment; the refrigerant temperature control unit gradually reduces the heating of the refrigerant flowing through the first flow path from the start of the plasma treatment until the end of the treatment. The temperature of the object to be processed is substantially maintained at the above-described set processing temperature. 一種載置台溫度控制程式，屬於藉由冷媒循環器將冷媒循環供給於設置在載置被處理體的載置台的第一及第二冷媒通路並用以控制上述載置台的溫度的載置台溫度控制程式，其特徵為：實行：在上述冷媒循環器的送出口與反饋口之間並聯地連接上述第一冷媒通路與上述第二冷媒通路，將由上述冷媒循環器以基準溫度所送出的冷媒中一部分由上述基準溫度上昇或下降至所期望的設定溫度之後流進上述第一冷媒通路，並將剩餘之冷媒實質上仍以上述基準溫度流進上述第二冷媒通路而進行上述載置台的溫度控制的步驟，及在上述冷媒循環器的送出口與反饋口之間串聯地連接上述第一冷媒通路與上述第二冷媒通路，將上述冷媒循環器所送出的冷媒中一部分由上述基準溫度上昇或下降至所 期望的設定溫度之後，或是實質上仍以上述基準溫度依序流進上述第一及第二冷媒通路，並將剩餘之冷媒予以旁通而進行上述載置台的溫度控制的步驟。A stage temperature control program is a stage temperature control program for circulating a refrigerant to a first and second refrigerant passages provided on a mounting table on which a workpiece is placed by a refrigerant circulator to control the temperature of the stage The method is characterized in that: the first refrigerant passage and the second refrigerant passage are connected in parallel between the delivery port of the refrigerant circulator and the feedback port, and a part of the refrigerant sent by the refrigerant circulator at the reference temperature is partially Step of flowing the temperature into the first refrigerant passage after the reference temperature rises or falls to a desired set temperature, and the remaining refrigerant substantially flows into the second refrigerant passage at the reference temperature to perform temperature control of the mounting table And connecting the first refrigerant passage and the second refrigerant passage in series between the delivery port of the refrigerant circulator and the feedback port, and increasing or decreasing a part of the refrigerant sent by the refrigerant circulator to the reference temperature After the desired set temperature, or substantially still flowing into the first and second refrigerant passages in the above-described reference temperature, the remaining refrigerant is bypassed to perform temperature control of the mounting table.
TW095111616A 2005-03-31 2006-03-31 Temperature control method and processing device of the temperature control device and the stage of the stage and the temperature control program of the stage TWI440079B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005101767A JP4551256B2 (en) 2005-03-31 2005-03-31 Mounting table temperature control device, mounting table temperature control method, processing device, and mounting table temperature control program

Publications (2)

Publication Number Publication Date
TW200703489A TW200703489A (en) 2007-01-16
TWI440079B true TWI440079B (en) 2014-06-01

Family

ID=37030599

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111616A TWI440079B (en) 2005-03-31 2006-03-31 Temperature control method and processing device of the temperature control device and the stage of the stage and the temperature control program of the stage

Country Status (4)

Country Link
JP (1) JP4551256B2 (en)
KR (1) KR100905897B1 (en)
CN (1) CN1841654B (en)
TW (1) TWI440079B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI673465B (en) * 2017-04-18 2019-10-01 迪弗斯科技股份有限公司 Electrostatic cold storage system and electrostatic freezing and thawing method

Families Citing this family (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4551256B2 (en) 2005-03-31 2010-09-22 東京エレクトロン株式会社 Mounting table temperature control device, mounting table temperature control method, processing device, and mounting table temperature control program
CN100361288C (en) * 2005-12-07 2008-01-09 北京北方微电子基地设备工艺研究中心有限责任公司 System for fast controlling electrostatic chuck temperature
JP5003102B2 (en) * 2006-10-27 2012-08-15 東京エレクトロン株式会社 Electrostatic chuck diagnostic method, vacuum processing apparatus, and storage medium
US7582491B2 (en) 2006-10-27 2009-09-01 Tokyo Electron Limited Method for diagnosing electrostatic chuck, vacuum processing apparatus, and storage medium
JP5042661B2 (en) * 2007-02-15 2012-10-03 東京エレクトロン株式会社 Plasma processing apparatus and filter unit
JP4917981B2 (en) * 2007-07-10 2012-04-18 東京エレクトロン株式会社 Inspection method and program recording medium recording inspection method
KR100927391B1 (en) * 2007-10-17 2009-11-19 유니셈(주) Chiller device for semiconductor process equipment and its control method
JP2009111301A (en) * 2007-11-01 2009-05-21 Hitachi High-Technologies Corp Plasma processor
JP5301812B2 (en) * 2007-11-14 2013-09-25 東京エレクトロン株式会社 Plasma processing equipment
KR101006252B1 (en) * 2008-05-19 2011-01-06 주식회사 동부하이텍 Platen temperature control system using chiller
US8596336B2 (en) * 2008-06-03 2013-12-03 Applied Materials, Inc. Substrate support temperature control
WO2010004620A1 (en) * 2008-07-08 2010-01-14 東京エレクトロン株式会社 Device and method for removing nitride film
KR100890961B1 (en) * 2008-07-08 2009-03-27 (주)피티씨 Hybrid temperature control method for chiller apparatus for decreasing power consumption
CN101373731B (en) * 2008-10-21 2013-02-27 北京北方微电子基地设备工艺研究中心有限责任公司 Electrostatic chuck apparatus and temperature control method thereof
KR100884319B1 (en) * 2008-12-03 2009-02-18 (주)피티씨 Chiller apparatus for decreasing power consumption
KR100906629B1 (en) * 2008-12-29 2009-07-10 (주)테키스트 Apparatus for controlling the temperature
JP5641709B2 (en) * 2009-04-23 2014-12-17 キヤノン株式会社 Device manufacturing apparatus and device manufacturing method
KR101383283B1 (en) * 2009-11-02 2014-04-08 엘아이지에이디피 주식회사 Chemical vapor deposition device and temperature control method of chemical vapor deposition device
KR101365202B1 (en) * 2009-11-02 2014-02-20 엘아이지에이디피 주식회사 Temperature control method of chemical vapor deposition device
JP5643062B2 (en) * 2009-11-24 2014-12-17 東京エレクトロン株式会社 Plasma processing equipment
KR101108337B1 (en) * 2009-12-31 2012-01-25 주식회사 디엠에스 Apparatus for controlling temperature of electrostatic chuck comprising internal 2 stage refrigrants route
US8916793B2 (en) * 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
CN102412169B (en) * 2010-09-21 2014-05-28 和舰科技(苏州)有限公司 Wafer processing machine with automatic temperature control function
JP5762841B2 (en) 2011-06-21 2015-08-12 東京エレクトロン株式会社 Semiconductor manufacturing equipment
JP5822578B2 (en) 2011-07-20 2015-11-24 東京エレクトロン株式会社 Mounting table temperature control apparatus and substrate processing apparatus
CN102509714B (en) * 2011-11-18 2014-08-27 中微半导体设备(上海)有限公司 Device and method for quickly controlling temperature of electrostatic chuck
JP5863582B2 (en) 2012-07-02 2016-02-16 東京エレクトロン株式会社 Plasma processing apparatus and temperature control method
KR101335435B1 (en) * 2012-09-25 2013-11-29 유니셈(주) Cooling apparatus for semiconductor manufacturing equipment
TWI683382B (en) * 2013-03-15 2020-01-21 應用材料股份有限公司 Carousel gas distribution assembly with optical measurements
CN104681380B (en) * 2013-11-29 2017-07-07 中微半导体设备(上海)有限公司 A kind of electrostatic chuck and its plasma processing chamber
CN103762188B (en) * 2014-01-02 2016-06-15 同济大学 The discrimination method of electrostatic chuck and chip temperature in the long membrane process of a kind of semi-conductor
JP6018606B2 (en) 2014-06-27 2016-11-02 東京エレクトロン株式会社 System including temperature-controllable stage, semiconductor manufacturing apparatus, and stage temperature control method
KR101634452B1 (en) * 2014-10-24 2016-06-29 세메스 주식회사 Chuck structure for testing a wafer using probe card
JP6529512B2 (en) 2014-11-12 2019-06-12 東京エレクトロン株式会社 Stage and substrate processing equipment
KR101681493B1 (en) * 2015-03-11 2016-12-05 (주)티티에스 Suscepter and temperature variable apparatus of susceptor
JP6570894B2 (en) * 2015-06-24 2019-09-04 東京エレクトロン株式会社 Temperature control method
JP6651408B2 (en) * 2016-04-28 2020-02-19 光洋サーモシステム株式会社 Heat treatment equipment
JP6837202B2 (en) 2017-01-23 2021-03-03 パナソニックＩｐマネジメント株式会社 Substrate heating device and method and manufacturing method of electronic device
JP6820206B2 (en) * 2017-01-24 2021-01-27 東京エレクトロン株式会社 How to process the work piece
CN106653661B (en) * 2017-02-28 2020-06-09 北京北方华创微电子装备有限公司 Cooling system and cooling method for process door of heat treatment equipment
CN106814769B (en) * 2017-03-27 2018-08-10 成都深冷科技有限公司 A kind of high/low temperature cyclic control system and high/low temperature fast control method
JP7227154B2 (en) * 2017-03-31 2023-02-21 ラム リサーチ コーポレーション Electrostatic chuck with flexible wafer temperature control
JP7101023B2 (en) * 2018-04-03 2022-07-14 東京エレクトロン株式会社 Temperature control method
JP7195060B2 (en) * 2018-05-17 2022-12-23 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
JP7175114B2 (en) 2018-07-19 2022-11-18 東京エレクトロン株式会社 Mounting table and electrode member
JP7112915B2 (en) * 2018-09-07 2022-08-04 東京エレクトロン株式会社 temperature control system
JP7129877B2 (en) * 2018-10-15 2022-09-02 東京エレクトロン株式会社 Temperature control system and temperature control method
CN110544663A (en) * 2018-10-31 2019-12-06 北京北方华创微电子装备有限公司 Circulating liquid system of electrostatic adsorption chuck
CN109972122B (en) * 2019-03-28 2022-04-19 惠科股份有限公司 Material delivery control method and system for display panel
CN112216585B (en) * 2019-07-11 2022-12-30 中微半导体设备(上海)股份有限公司 Plasma processor and base temperature control method
JP7365815B2 (en) 2019-08-09 2023-10-20 東京エレクトロン株式会社 Mounting table and substrate processing equipment
JP7330017B2 (en) * 2019-08-22 2023-08-21 東京エレクトロン株式会社 HEAT MEDIUM CIRCUIT SYSTEM AND HEAT MEDIUM CIRCUIT SYSTEM CONTROL METHOD
CN112951695B (en) * 2019-11-26 2023-09-29 中微半导体设备(上海)股份有限公司 Cooling tube assembly, cooling device and plasma processing equipment
US20210249284A1 (en) * 2020-02-12 2021-08-12 Applied Materials, Inc. Fast response dual-zone pedestal assembly for selective preclean
JP2022016129A (en) 2020-07-10 2022-01-21 東京エレクトロン株式会社 Mounting table, device for processing substrate, and method for controlling temperature of substrate
CN112501589A (en) * 2020-11-06 2021-03-16 北京印刷学院 Atomic layer deposition device
CN114300386A (en) * 2021-12-17 2022-04-08 北京北方华创微电子装备有限公司 Reaction chamber tail gas pressure control device and semiconductor process equipment
CN114540800B (en) * 2022-02-24 2023-09-12 季华实验室 Substrate preheating system, substrate preheating method, electronic device, storage medium and epitaxial device
WO2023239585A1 (en) * 2022-06-07 2023-12-14 Lam Research Corporation Substrate temperature control with integrated thermoelectric cooling system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216140A (en) * 1999-01-20 2000-08-04 Hitachi Ltd Wafer stage and wafer treating apparatus
JP3817414B2 (en) * 2000-08-23 2006-09-06 株式会社日立製作所 Sample stage unit and plasma processing apparatus
KR20040059262A (en) * 2002-12-28 2004-07-05 동부전자 주식회사 multi channel cooling device and its method
US7789962B2 (en) 2005-03-31 2010-09-07 Tokyo Electron Limited Device and method for controlling temperature of a mounting table, a program therefor, and a processing apparatus including same
JP4551256B2 (en) 2005-03-31 2010-09-22 東京エレクトロン株式会社 Mounting table temperature control device, mounting table temperature control method, processing device, and mounting table temperature control program

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI673465B (en) * 2017-04-18 2019-10-01 迪弗斯科技股份有限公司 Electrostatic cold storage system and electrostatic freezing and thawing method

Also Published As

Publication number Publication date
CN1841654A (en) 2006-10-04
JP2006286733A (en) 2006-10-19
KR100905897B1 (en) 2009-07-02
KR20060106736A (en) 2006-10-12
JP4551256B2 (en) 2010-09-22
CN1841654B (en) 2010-10-20
TW200703489A (en) 2007-01-16

Similar Documents

Publication Publication Date Title
TWI440079B (en) Temperature control method and processing device of the temperature control device and the stage of the stage and the temperature control program of the stage
US8182869B2 (en) Method for controlling temperature of a mounting table
KR101934322B1 (en) Stage temperature control device and substrate processing device
US7838792B2 (en) Plasma processing apparatus capable of adjusting temperature of sample stand
JP4745961B2 (en) Substrate support having temperature-controlled substrate support surface, control method thereof, semiconductor processing apparatus and method
JP4969259B2 (en) Plasma processing equipment
JP4772779B2 (en) Temperature control method and temperature control apparatus
JP5905735B2 (en) Substrate processing apparatus, substrate processing method, and method for changing settable band of substrate temperature
US7988062B2 (en) Temperature control device for target substrate, temperature control method and plasma processing apparatus including same
KR20180133536A (en) Advanced Temperature Control for Wafer Carrier in Plasma Processing Chamber
WO2011149508A2 (en) Apparatus and method for temperature control of a semiconductor substrate support
US20160104605A1 (en) Temperature control system and temperature control method
KR101039085B1 (en) Plasma processing apparatus and plasma processing method
WO2016085826A1 (en) Substrate carrier using a proportional thermal fluid delivery system
JP2016162794A (en) Vacuum processing apparatus
US20220010428A1 (en) Substrate support, apparatus for processing substrate, and method of adjusting temperature of substrate
KR20220134477A (en) Temperature controller, substrate processing apparatus, and pressure control method
KR20210018145A (en) Placing table and substrate processing apparatus
CN112786426A (en) Gas supply method and substrate processing apparatus
JPH02308527A (en) Method and device for vacuum treatment

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees