CN112501589A - Atomic layer deposition device - Google Patents
Atomic layer deposition device Download PDFInfo
- Publication number
- CN112501589A CN112501589A CN202011229445.9A CN202011229445A CN112501589A CN 112501589 A CN112501589 A CN 112501589A CN 202011229445 A CN202011229445 A CN 202011229445A CN 112501589 A CN112501589 A CN 112501589A
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- China
- Prior art keywords
- fluid
- cover plate
- deposition chamber
- valves
- tee joint
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
Abstract
The invention relates to an atomic layer deposition device, which aims to solve the problem that in the existing thermal atomic layer deposition process, when the deposition temperature is higher than the upper limit of a precursor temperature window, the deposition mode is changed into chemical vapor deposition.
Description
Technical Field
The invention relates to an atomic layer deposition device, in particular to a device for realizing atomic layer deposition by changing the temperature of a substrate.
Background
The atomic layer deposition technology is a high-precision chemical deposition mode, and atomic layer films grow in each cycle by alternately introducing two reaction precursors in a pulse mode. Because of the advantages of precise control of film thickness, adjustable particle size and composition, realization of uniform and conformal deposition on three-dimensional complex substrates, and the like, the atomic layer deposition technology is widely applied to the fields of integrated circuit chip preparation, biotechnology, nano materials, optics, catalysis, and the like.
One of the significant features of the ald technique is that the limiting factor is the temperature window of the precursor, and the deposition mode is the ald mode only within the temperature window. If the deposition temperature is higher than the upper limit of the temperature window, the deposition mode is changed into a chemical vapor deposition mode in which the precursor is thermally decomposed. The temperature windows of the precursors are different from each other, and the precursors with too narrow temperature windows or too low upper limit of the temperature windows can not be used for atomic layer deposition, so that the selection range of the precursors for atomic layer deposition is greatly reduced.
Disclosure of Invention
The invention aims to solve the problem that in the existing thermal atomic layer deposition process, when the deposition temperature is higher than the upper limit of a precursor temperature window, the deposition mode is changed into chemical vapor deposition, and provides a novel atomic layer deposition device and a technical scheme.
The atomic layer device is realized by the following technical scheme:
the apparatus comprises: a substrate table and a deposition chamber,
the deposition chamber is a closed chamber with an opening,
the substrate stage comprises an objective table, a closed cover plate and a hollow metal tube, wherein the outer wall surface of the hollow metal tube is attached to the lower surface and/or the side wall surface of the objective table; the closed cover plate is connected with the opening of the deposition chamber in a sealing manner and is used for sealing the opening of the deposition chamber;
one end of a hollow metal pipe penetrates through the closed cover plate to serve as a fluid inlet to be connected with one port of the tee joint, and the other two ports of the tee joint are respectively connected with two fluid sources with different temperatures through valves;
the other end of the hollow metal pipe penetrates through the closed cover plate to serve as a fluid outlet to be connected with one port of the tee joint, and the other two ports of the tee joint are respectively connected with one fluid storage container or two fluid storage containers through valves.
The two fluid sources with different temperatures and the two fluid storage containers are two fluid instruments with different set temperatures;
one end of a hollow metal pipe penetrates through the closed cover plate to serve as a fluid inlet to be connected with one port of the tee joint, and the other two ports of the tee joint are respectively connected with fluid outlets of two fluid instruments with different set temperatures through valves; the fluid flows into the fluid inlet after flowing out of the fluid instrument;
the other end of the hollow metal pipe penetrates through the closed cover plate to serve as an outlet of fluid and is connected with one port of the tee joint, and the other two ports of the tee joint are respectively connected with fluid return ports of two fluid instruments with different set temperatures through valves; the fluid flows out of the fluid outlet and then flows back into the fluid meter.
The valves are pneumatic pulse valves, and the four valves are respectively a first pneumatic pulse valve, a second pneumatic pulse valve, a third pneumatic pulse valve and a fourth pneumatic pulse valve.
A flange is arranged at the opening of the deposition chamber, and the deposition chamber is hermetically connected with the closed cover plate through the flange.
The sealed cover plate is hermetically connected with the outer wall surface of the metal pipe (1) penetrating through the sealed cover plate; the sealing method is gluing, screwing or welding.
The metal tube jointed with the objective table is in a bow shape, a plane spiral line shape or a U shape.
The wall surface of the deposition chamber is provided with an air inlet and an air outlet;
the gas inlet is connected with a carrier gas source (such as a carrier gas bottle) through a pipeline; the exhaust port is connected with a vacuum pumping device.
And the deposition chamber is provided with a pressure gauge for observing the pressure in the deposition chamber.
Drawings
FIG. 1: the invention discloses a structural schematic diagram of an atomic layer deposition device;
1. the gas valve comprises a hollow metal pipe, 2, 3, a first fluid inlet, a second fluid inlet, 4, 5, a first fluid outlet, a second fluid outlet, 6-9, a first gas pulse valve, a second gas pulse valve, a third gas pulse valve, a fourth gas pulse valve, 10, a closed cover plate, 11, an object stage, 12, a flange, 13, a gas inlet, 14, a deposition chamber, 15 and an exhaust port.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without inventive step, are within the scope of the present invention.
Example 1. Refer to fig. 1. An atomic layer deposition apparatus includes a substrate table and a deposition chamber.
The apparatus comprises: a substrate table and a deposition chamber,
the deposition chamber is a closed chamber with an opening,
the substrate table comprises an objective table 11, a closed cover plate 10 and a hollow metal tube 1, wherein the outer wall surface of the hollow metal tube 1 is attached to the lower surface and/or the side wall surface of the objective table 11; the closed cover plate 10 is connected with the opening of the deposition chamber in a sealing way and is used for sealing the opening of the deposition chamber;
one end of a hollow metal pipe 1 penetrates through the closed cover plate 10 to serve as an inlet of fluid to be connected with one port of the tee joint, and the other two ports of the tee joint are respectively connected with two fluid sources with different temperatures through valves;
the other end of the hollow metal tube 1 passes through the closed cover plate 10 to be used as a fluid outlet and is connected with one port of the tee joint, and the other two ports of the tee joint are respectively connected with one fluid storage container or two fluid storage containers through valves.
The two fluid sources with different temperatures and the two fluid storage containers are two fluid instruments with different set temperatures;
one end of a hollow metal tube 1 penetrates through a closed cover plate 10 to serve as an inlet of fluid to be connected with one port of a tee joint, and the other two ports of the tee joint are respectively connected with fluid outlets of two fluid instruments with different set temperatures through valves; the fluid flows into the fluid inlet after flowing out of the fluid instrument; the valves are pneumatic pulse valves, and the two valves are a first pneumatic pulse valve 6 and a second pneumatic pulse valve 7 respectively;
the other end of the hollow metal tube 1 passes through the closed cover plate 10 to be used as a fluid outlet to be connected with one port of the tee joint, and the other two ports of the tee joint are respectively connected with fluid return ports of two fluid instruments with different set temperatures through valves; the fluid flows out of the fluid outlet and then flows back into the fluid meter. The valves are pneumatic pulse valves, and the two valves are respectively a third pneumatic pulse valve 8 and a fourth pneumatic pulse valve 9.
A flange 12 is arranged at the opening of the deposition chamber, and the deposition chamber is hermetically connected with a sealed cover plate 10 through the flange 12 (the deposition chamber is connected and pulled through bolts and sealed through an O-ring rubber gasket).
The closed cover plate 10 is hermetically connected with the outer wall surface of the metal pipe 1 penetrating through the closed cover plate; the sealing mode is welding.
The metal tube 1 attached to the stage 11 is in a bow shape.
The wall surface of the deposition chamber is provided with an air inlet 13 and an air outlet 15;
the gas inlet 13 is connected with a carrier gas source (such as a carrier gas bottle) through a pipeline; the exhaust port 15 is connected with a vacuum-pumping device.
And the deposition chamber is provided with a pressure gauge for observing the pressure in the deposition chamber.
When the first and third pneumatic pulse valves 6 and 8 are opened, the fluid with the temperature of T1 flows in from the metal pipe orifice 2 and flows out from the pipe orifice 4, at the moment, the second and fourth pneumatic pulse valves 7 and 9 are in a closed state, and after a certain time, the temperature of the objective table is constant at T1. And after the precursor pulse is finished, inert gas is introduced into the deposition cavity to purge the substrate. When the second and fourth pneumatic pulse valves 7 and 9 are opened, the fluid with the temperature of T2 flows in from the metal pipe orifice 3 and flows out from the pipe orifice 5, and at this time, the first and third pneumatic pulse valves 6 and 8 are in a closed state. Thus, the temperature of the stage is raised to T2, which is higher than the thermal decomposition temperature of the precursor, and the second precursor is introduced, so that the precursor adsorbed on the substrate surface is decomposed or reacted with the second precursor, and after the reaction is stopped, the reaction is purged with an inert gas, thereby completing one cycle of atomic layer deposition. It should be noted that the liquid inflow end and the liquid outflow end of T1 and T2 can be interchanged.
Embodiment 2, a novel atomic layer deposition apparatus, having substantially the same structure as that of example 1, except that: the right end (below the objective table) of the hollow metal tube is in a coil shape (namely a plane spiral line shape).
Embodiment 3, a novel atomic layer deposition apparatus, having substantially the same structure as that of example 1, except that: the right end (below the objective table) of the hollow metal tube is U-shaped.
Embodiment 4, a novel atomic layer deposition apparatus, having substantially the same structure as that of example 1, except that: the hollow metal tube 1 and the objective table are jointed in a welding mode.
Embodiment 5, a novel atomic layer deposition apparatus having substantially the same structure as that of example 1, except that: the hollow metal tube 1 and the sealing cover plate 10 are glued (glued) in a sealing way.
Embodiment 6, a novel atomic layer deposition apparatus, having substantially the same structure as that of example 1, except that: the hollow metal tube 1 and the sealing cover plate 10 are connected in a sealing way by screw threads (screwing).
Claims (8)
1. An atomic layer deposition apparatus, characterized in that the apparatus comprises: a substrate table and a deposition chamber,
the deposition chamber is a closed chamber with an opening,
the substrate table comprises an objective table (11), a closed cover plate (10) and a hollow metal tube (1), wherein the outer wall surface of the hollow metal tube (1) is attached to the lower surface and/or the side wall surface of the objective table (11); the closed cover plate (10) is connected with the opening of the deposition chamber in a sealing way and is used for sealing the opening of the deposition chamber;
one end of a hollow metal pipe (1) penetrates through the closed cover plate (10) to be used as a fluid inlet to be connected with one port of the tee joint, and the other two ports of the tee joint are respectively connected with two fluid sources with different temperatures through valves;
the other end of the hollow metal pipe (1) passes through the closed cover plate (10) to be used as a fluid outlet to be connected with one port of the tee joint, and the other two ports of the tee joint are respectively connected with one fluid storage container or two fluid storage containers through valves.
2. The apparatus of claim 1,
the two fluid sources with different temperatures and the two fluid storage containers are two fluid instruments with different set temperatures;
one end of a hollow metal pipe (1) penetrates through the closed cover plate (10) to be used as a fluid inlet to be connected with one port of the tee joint, and the other two ports of the tee joint are respectively connected with fluid outlets of two fluid instruments with different set temperatures through valves; the fluid flows into the fluid inlet after flowing out of the fluid instrument;
the other end of the hollow metal pipe (1) passes through the closed cover plate (10) to be used as a fluid outlet to be connected with one port of the tee joint, and the other two ports of the tee joint are respectively connected with fluid return ports of two fluid instruments with different set temperatures through valves; the fluid flows out of the fluid outlet and then flows back into the fluid meter.
3. The apparatus according to claim 1, characterized in that the valves are pneumatic impulse valves, the four valves being a first pneumatic impulse valve (6), a second pneumatic impulse valve (7), a third pneumatic impulse valve (8), a fourth pneumatic impulse valve (9), respectively.
4. The apparatus of claim 1,
a flange 12 is arranged at the opening of the deposition chamber, and the deposition chamber is hermetically connected with a closed cover plate (10) through the flange (12).
5. The apparatus of claim 1,
the sealed cover plate (10) is hermetically connected with the outer wall surface of the metal pipe (1) penetrating through the sealed cover plate; the sealing method is gluing, screwing or welding.
6. The apparatus of claim 1,
the metal tube (1) jointed with the objective table (11) is in a bow shape, a plane spiral line shape or a U shape.
7. The apparatus of claim 1,
an air inlet (13) and an air outlet (15) are arranged on the wall surface of the deposition chamber;
the gas inlet (13) is connected with a carrier gas source (such as a carrier gas bottle) through a pipeline; the exhaust port (15) is connected with a vacuum pumping device.
8. The apparatus of claim 1,
and the deposition chamber is provided with a pressure gauge for observing the pressure in the deposition chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011229445.9A CN112501589A (en) | 2020-11-06 | 2020-11-06 | Atomic layer deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011229445.9A CN112501589A (en) | 2020-11-06 | 2020-11-06 | Atomic layer deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112501589A true CN112501589A (en) | 2021-03-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011229445.9A Pending CN112501589A (en) | 2020-11-06 | 2020-11-06 | Atomic layer deposition device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112501589A (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3952796A (en) * | 1975-04-07 | 1976-04-27 | Larson Richard C | Temperature control system |
| JP2000183028A (en) * | 1998-12-14 | 2000-06-30 | Tokyo Electron Ltd | Processing apparatus and process system |
| US20020003037A1 (en) * | 1997-12-31 | 2002-01-10 | Cousineau Shawn M. | Temperature-controlled chuck with recovery of circulating temperature control fluid |
| JP2006286733A (en) * | 2005-03-31 | 2006-10-19 | Tokyo Electron Ltd | Temperature controller, temperature control method and temperature control program for mounting stand, and processor |
| US20080199614A1 (en) * | 2007-02-15 | 2008-08-21 | Promos Technologies Inc. | Method for improving atomic layer deposition performance and apparatus thereof |
| US20150332942A1 (en) * | 2014-05-16 | 2015-11-19 | Eng Sheng Peh | Pedestal fluid-based thermal control |
| US20160204009A1 (en) * | 2015-01-09 | 2016-07-14 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
| US20170092471A1 (en) * | 2015-09-24 | 2017-03-30 | Tokyo Electron Limited | Temperature adjustment device and substrate processing apparatus |
| CN109252143A (en) * | 2017-07-13 | 2019-01-22 | 中国电子科技集团公司第四十八研究所 | A kind of chip bench |
| US20190235384A1 (en) * | 2018-01-30 | 2019-08-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Temperature controlling apparatus and method for forming coating layer |
-
2020
- 2020-11-06 CN CN202011229445.9A patent/CN112501589A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3952796A (en) * | 1975-04-07 | 1976-04-27 | Larson Richard C | Temperature control system |
| US20020003037A1 (en) * | 1997-12-31 | 2002-01-10 | Cousineau Shawn M. | Temperature-controlled chuck with recovery of circulating temperature control fluid |
| JP2000183028A (en) * | 1998-12-14 | 2000-06-30 | Tokyo Electron Ltd | Processing apparatus and process system |
| JP2006286733A (en) * | 2005-03-31 | 2006-10-19 | Tokyo Electron Ltd | Temperature controller, temperature control method and temperature control program for mounting stand, and processor |
| US20080199614A1 (en) * | 2007-02-15 | 2008-08-21 | Promos Technologies Inc. | Method for improving atomic layer deposition performance and apparatus thereof |
| US20150332942A1 (en) * | 2014-05-16 | 2015-11-19 | Eng Sheng Peh | Pedestal fluid-based thermal control |
| US20160204009A1 (en) * | 2015-01-09 | 2016-07-14 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
| US20170092471A1 (en) * | 2015-09-24 | 2017-03-30 | Tokyo Electron Limited | Temperature adjustment device and substrate processing apparatus |
| CN109252143A (en) * | 2017-07-13 | 2019-01-22 | 中国电子科技集团公司第四十八研究所 | A kind of chip bench |
| US20190235384A1 (en) * | 2018-01-30 | 2019-08-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Temperature controlling apparatus and method for forming coating layer |
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Application publication date: 20210316 |
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