TWI437617B - Electrostatic chuck and apparatus for processing a substrate including the same - Google Patents
Electrostatic chuck and apparatus for processing a substrate including the same Download PDFInfo
- Publication number
- TWI437617B TWI437617B TW100117989A TW100117989A TWI437617B TW I437617 B TWI437617 B TW I437617B TW 100117989 A TW100117989 A TW 100117989A TW 100117989 A TW100117989 A TW 100117989A TW I437617 B TWI437617 B TW I437617B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrostatic
- heating
- heat transfer
- substrate
- transfer coefficient
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Description
本發明的實施範例係關於一種靜電卡盤及其基板加工裝置，尤其是關於一種藉由靜電力來固定集成電路裝置如晶圓和玻璃板之基板的靜電卡盤及其基板加工裝置。Embodiments of the present invention relate to an electrostatic chuck and a substrate processing apparatus thereof, and more particularly to an electrostatic chuck and a substrate processing apparatus for fixing a substrate of an integrated circuit device such as a wafer and a glass plate by electrostatic force.
在一般情況下，集成電路裝置透過各種單元製程(Unit Process)而被製造於基板上，如製造於晶圓和玻璃板上。單元製程例如為沉積製程、蝕刻製程、光刻(photolithography)製程和離子植入(ion implantation)製程。舉例來說，集成電路裝置包括半導體記憶體裝置和用於平板顯示裝置的驅動電路。In general, integrated circuit devices are fabricated on substrates, such as wafers and glass plates, through various unit processes. The unit process is, for example, a deposition process, an etching process, a photolithography process, and an ion implantation process. For example, integrated circuit devices include semiconductor memory devices and drive circuits for flat panel display devices.
上述單元製程通常執行在一種用以加工基板的裝置(以下簡稱加工裝置)。加工裝置包括：加工腔體，提供內部空間以用於各單元製程的進行；來源供應器，用以供應各單元製程之來源氣體至加工腔體；以及靜電卡盤，位於加工腔體中，用以在單元製程的執行過程中固定基板。舉例來說，蝕刻製程通常在蝕刻裝置中執行，而蝕刻裝置通常包括加工腔體、連接至加工腔體且供應蝕刻氣體至加工腔體的氣體供應器、以及用以固定要被蝕刻製程蝕刻的基板之靜電卡盤。The above unit process is usually performed on a device for processing a substrate (hereinafter referred to as a processing device). The processing device comprises: a processing cavity, providing an internal space for the process of each unit; a source supply for supplying the source gas of each unit process to the processing cavity; and an electrostatic chuck located in the processing cavity, To fix the substrate during the execution of the unit process. For example, the etching process is typically performed in an etching apparatus, and the etching apparatus generally includes a processing chamber, a gas supply connected to the processing chamber and supplying an etching gas to the processing chamber, and a fixing to be etched by the etching process. Electrostatic chuck of the substrate.
靜電卡盤傳統上包括具有用於產生靜電力的靜電電極之靜電部以及具有加熱電極且位於靜電部之下的加熱部。基板位於靜電部之上且透過加熱部被加熱。在加熱部中，熱能是由加熱電極所產生的。The electrostatic chuck conventionally includes an electrostatic portion having an electrostatic electrode for generating an electrostatic force and a heating portion having a heating electrode and located below the electrostatic portion. The substrate is located above the electrostatic portion and is heated by the heating portion. In the heating portion, thermal energy is generated by the heating electrode.
加熱電極以螺旋狀或重複的凹凸狀(protrusion-and-recess)而形成，也就是不平坦的形狀。加熱電極均勻地設置在加熱部中。加熱電極具有高電傳導性以及熱傳導性，且因此能有效率地產生熱能。The heating electrode is formed in a spiral shape or a repeating-and-recess shape, that is, an uneven shape. The heating electrode is uniformly disposed in the heating portion. The heating electrode has high electrical conductivity as well as thermal conductivity, and thus can efficiently generate thermal energy.
相鄰的加熱電極在加熱部中需要被相互絕緣，故加熱部需要在鄰近加熱電極之間具有電性絕緣體的功能。因此，加熱部具有高電阻抗及低熱傳導。The adjacent heating electrodes need to be insulated from each other in the heating portion, so that the heating portion needs to have an electrical insulator function between adjacent heating electrodes. Therefore, the heating portion has high electrical resistance and low heat conduction.
基於上述原因，產生於加熱部中的熱能很難被傳導至靜電部上的基板，因此基板難以在傳統的靜電卡盤上被均勻地加熱。For the above reasons, the heat energy generated in the heating portion is hardly conducted to the substrate on the electrostatic portion, and thus the substrate is difficult to be uniformly heated on the conventional electrostatic chuck.
實施例提供了一種靜電卡盤，用以固定及均勻加熱基板。Embodiments provide an electrostatic chuck for securing and uniformly heating a substrate.
其他實施例則提供一種使用靜電卡盤之基板的加工裝置。Other embodiments provide a processing apparatus for a substrate using an electrostatic chuck.
依據一些實施例，提供了包括靜電部部的靜電卡盤，用以透過靜電力使一基板固定於該靜電部之上靜電部，靜電部具有一靜電電極以產生該靜電力，靜電部具有一第一熱傳導係數靜電部。靜電卡盤也包括了加熱部部，係位於靜電部部之下，用以加熱基板，加熱部部具有加熱電極以產生熱能，加熱部具有一大於第一熱傳導係數的第二熱傳導係數。According to some embodiments, an electrostatic chuck including an electrostatic portion is provided for fixing a substrate to an electrostatic portion above the electrostatic portion by electrostatic force, the electrostatic portion having an electrostatic electrode to generate the electrostatic force, and the electrostatic portion having a The first heat transfer coefficient electrostatic portion. The electrostatic chuck also includes a heating portion located below the electrostatic portion for heating the substrate, the heating portion having a heating electrode to generate thermal energy, and the heating portion having a second heat transfer coefficient greater than the first heat transfer coefficient.
在一些實施例中，加熱部的成分包括具有氮化鋁(AlN)、氧化鎂(MgO)、氧化釔(Y2O3)及其組合之一的陶瓷。第二熱傳導係數介於150W/(mK)至250W/(mK)之範圍。In some embodiments, the composition of the heating portion includes a ceramic having one of aluminum nitride (AlN), magnesium oxide (MgO), yttrium oxide (Y2O3), and a combination thereof. The second heat transfer coefficient ranges from 150 W/(mK) to 250 W/(mK).
在一些實施例中，加熱部以及加熱電極具有相同的厚度，且加熱電極的側表面以加熱部覆蓋。舉例來說，靜電部的厚度介於1mm至5mm。In some embodiments, the heating portion and the heating electrode have the same thickness, and the side surface of the heating electrode is covered with the heating portion. For example, the thickness of the electrostatic portion is between 1 mm and 5 mm.
在一些實施例中，靜電卡盤更包括絕緣部，絕緣部位於加熱部之下，絕緣部具有第三熱傳導係數，第三熱傳導係數小於第一熱傳導係數。舉例來說，絕緣部的厚度介於0.05mm至0.5mm。In some embodiments, the electrostatic chuck further includes an insulating portion, the insulating portion is located under the heating portion, the insulating portion has a third heat transfer coefficient, and the third heat transfer coefficient is smaller than the first heat transfer coefficient. For example, the thickness of the insulating portion is between 0.05 mm and 0.5 mm.
在一些實施例中，加熱部的上表面與靜電部的下表面接觸，而絕緣部的上表面則與加熱部的下表面接觸。In some embodiments, the upper surface of the heating portion is in contact with the lower surface of the electrostatic portion, and the upper surface of the insulating portion is in contact with the lower surface of the heating portion.
依據一些實施例，提供了用以加工基板且包括加工腔體的裝置，基板在加工腔體內被加工。裝置也包括氣體供應器，其連接至加工腔體，用以供應氣體至加工腔體以加工該基板。裝置也包括靜電卡盤，位於加工腔體之中，用以固定基板。靜電卡盤包括靜電部，用以透過靜電力使基板固定於靜電部之上，靜電部具有靜電電極以產生靜電力，靜電部具有第一熱傳導係數。靜電卡盤也包括加熱部，位於靜電部下，用以加熱基板，加熱部具有加熱電極以產生熱能，加熱部具有大於第一熱傳導係數的第二熱傳導係數。In accordance with some embodiments, an apparatus for processing a substrate and including a processing chamber is provided, the substrate being machined within the processing chamber. The apparatus also includes a gas supply coupled to the processing chamber for supplying gas to the processing chamber to process the substrate. The device also includes an electrostatic chuck located in the processing chamber for securing the substrate. The electrostatic chuck includes an electrostatic portion for fixing the substrate to the electrostatic portion by electrostatic force, the electrostatic portion has an electrostatic electrode to generate an electrostatic force, and the electrostatic portion has a first heat transfer coefficient. The electrostatic chuck also includes a heating portion under the electrostatic portion for heating the substrate, the heating portion having a heating electrode to generate thermal energy, and the heating portion having a second heat transfer coefficient greater than the first heat transfer coefficient.
在一實施例中，加熱部及加熱電極具有相同的厚度，且加熱電極的側表面以加熱部覆蓋。In an embodiment, the heating portion and the heating electrode have the same thickness, and the side surface of the heating electrode is covered with the heating portion.
在一實施例中，靜電卡盤更包括絕緣部，絕緣部係位於加熱部之下，絕緣部具有第三熱傳導係數，第三熱傳導係數小於第一熱傳導係數，加熱部的上表面與靜電部的下表面接觸，而加熱部的下表面則與絕緣部的上表面接觸。In one embodiment, the electrostatic chuck further includes an insulating portion, the insulating portion is located under the heating portion, the insulating portion has a third heat transfer coefficient, and the third heat transfer coefficient is smaller than the first heat transfer coefficient, and the upper surface of the heating portion and the electrostatic portion The lower surface is in contact, and the lower surface of the heating portion is in contact with the upper surface of the insulating portion.
根據本發明之步驟的一些實施例，靜電卡盤可包括靜電部，基板位於靜電部之上，且加熱部位於靜電部之下。加熱部具有第二熱傳導係數，且可包括加熱電極以產生熱能。而靜電部具有第一熱傳導係數，且可包括靜電電極以產生靜電力。靜電卡盤可使用一配置來建構，使得第二熱傳導係數可大於第一熱傳導係數，且因此從加熱電極所產生的熱能首先可均勻地被傳導至加熱部，然後因為熱傳導係數的差異，熱能可從加熱部被傳導至靜電部。最後，熱能可被均勻地從靜電部傳導至基板，因此而均勻地加熱了基板。According to some embodiments of the steps of the present invention, the electrostatic chuck may include an electrostatic portion, the substrate being located above the electrostatic portion, and the heating portion being located below the electrostatic portion. The heating portion has a second heat transfer coefficient and may include a heating electrode to generate thermal energy. The electrostatic portion has a first heat transfer coefficient and may include an electrostatic electrode to generate an electrostatic force. The electrostatic chuck can be constructed using a configuration such that the second heat transfer coefficient can be greater than the first heat transfer coefficient, and thus the thermal energy generated from the heated electrode can be first uniformly conducted to the heating portion, and then the thermal energy can be thermally changed due to the difference in heat transfer coefficient. It is conducted from the heating portion to the electrostatic portion. Finally, the thermal energy can be uniformly conducted from the electrostatic portion to the substrate, thereby uniformly heating the substrate.
據此，基板可在加工腔體中藉由加工氣體而被均勻地加工，因此最小化了在加工腔體中基板上的加工瑕疵，以及改進了在加工裝置中製造之集成電路裝置的裝置品質。Accordingly, the substrate can be uniformly processed by the processing gas in the processing chamber, thereby minimizing processing defects on the substrate in the processing chamber, and improving the device quality of the integrated circuit device fabricated in the processing device. .
為了對本發明之上述及其他方面有更佳的瞭解，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。In order to provide a better understanding of the above and other aspects of the present invention, the preferred embodiments of the present invention are described in detail below.
在下文中將參照附圖來更完整地描述多種實施例，而在附圖中將顯示若干實施例。雖然本發明已以若干較佳實施例揭露如上，然其並非用以限定本發明，相反地，這些實施例乃用於使本發明之揭露更透徹與完整，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。在圖式中，為了清楚表示，層與區的尺寸以及相對尺寸將被放大。Various embodiments will be described more fully hereinafter with reference to the accompanying drawings in which FIG. While the invention has been described above in terms of several preferred embodiments, the invention is not intended to be limiting of the invention, but rather, these embodiments are used to make the disclosure of the present invention more thorough and complete. Within the spirit and scope of the present invention, various changes and retouchings can be made. In the drawings, the size and relative sizes of layers and regions will be exaggerated for clarity.
當一元件或層被稱為位於其他元件或層「之上」，或者「連接至」或「耦接至」其他元件或層，可表示直接位於其他元件或層之上，或者直接連接或耦接至其他元件或層，或者也可表示位於其他可能出現的中介元件或層之上，或者連接或耦接至其他可能出現的中介元件或層。相反地，當一元件或層被稱為「直接」位於其他元件或層「之上」，或者「直接連接至」或「直接耦接至」其他元件或層，則表示不會有中介元件或層的出現。各處相似的標號指的是相似的元件。如這裡所使用的，「和/或」的詞語包括了一個以上相關而列舉出之項目的任何一個及其所有組合。When an element or layer is referred to as being "above" or "connected" or "coupled" to another element or layer, it can mean that it is directly on the other element or layer, or directly connected or coupled. The other elements or layers may be connected to other elements or layers, or may be connected or coupled to other intervening elements or layers. Conversely, when an element or layer is referred to as being "directly on" or "directly connected" or "directly connected" or "directly connected" to another element or layer, The appearance of the layer. Like numbers refer to like elements throughout. As used herein, the term "and/or" includes any and all combinations of the items listed above.
雖然「第一」、「第二」、「第三」等詞語可在此用於描述多種元件、組成、區域、層和/或部件，但這些元件、組成、區域、層和/或部件並不受限於這些詞語。這些詞語僅用於將一元件、組成、區域、層或部件分辨於其他的元件、組成、區域、層或部件。因此，在本發明所教示的合理情況下，以下所討論的第一元件、組成、區域、層或部件也可被稱為第二元件、組成、區域、層或部件。Although the terms "first," "second," and "third" are used herein to describe various elements, components, regions, layers and/or components, these elements, components, regions, layers and/or components are Not limited to these words. These terms are only used to distinguish one element, component, region, layer or component to the other elements, components, regions, layers or components. Thus, the first element, component, region, layer or component discussed below may also be referred to as a second element, component, region, layer or component.
空間性關係詞語，例如「在...之下」、「較低」、「在...之上」、「較高」及類似的用語，在此可易於描述如圖式中繪示的元件或特徵與其他元件或特徵的關係。這些空間性關係詞語是用來在圖中所描繪的方向之外涵蓋所使用之裝置或功能的不同方向。舉例來說，如果在圖中的裝置是被翻轉的，則被描述為在其他元件或特徵「之下」的元件就被轉向成在其他元件或特徵「之上」。因此，在此所舉例的詞語「在...之下」皆可涵蓋「在...之下」與「在...之上」的方向。裝置可被反轉(旋轉90度或其他轉向)，且在此所使用的空間性關係描述詞語也隨之轉譯。Spatial relationship terms, such as "under", "lower", "above", "higher" and similar terms, can be easily described in the figure. The relationship of a component or feature to other components or features. These spatial relationship terms are used to encompass different orientations of the device or function being used in addition to the orientation depicted in the Figures. For example, elements in the "a" or "an" or "an" Therefore, the words "under" in this example can cover the direction of "below" and "above". The device can be reversed (rotated 90 degrees or other turns) and the spatial relationship description terms used herein are also translated.
在此所使用的術語僅是為了描述特定的實施例而非用以限制本發明。如在此所使用的，「一個」及「該」的單數型態同樣用以包括複數型態，除非於文中明確指出。進一步要被了解的是，當在說明書中使用「包括」和/或「包含」的詞語時，是用於指定所述特徵、整數、步驟、方向、元件和/或組成的出現，但並不排除一個以上的其他特徵、整數、步驟、方向、元件、組成及/或其群組的出現或增設。The terminology used herein is for the purpose of describing the particular embodiments As used herein, the singular forms "a" and "the" are also used to include the plural, unless the context clearly recites. It will be further understood that when the words "including" and / or "comprising" are used in the specification, they are used to designate the appearance of the features, integers, steps, directions, components and/or components, but not The appearance or addition of more than one of the other features, integers, steps, directions, components, compositions and/or groups thereof is excluded.
在此配合剖面圖來描述的實施例為理想化實施例的示意性範例(及中間的架構)。因此，因為例如製造技術和/或容差(tolerance)所造成圖式中形狀的變動是被預期的。因此，實施例不應用來限制在此所繪示區域的特殊形狀，而是用以包括因例如製造而產生的形狀偏差。舉例來說，一個被繪示為矩形的植入區域基本上具有圓弧或曲線的特徵，且/或其邊緣可具有漸變的(gradient)植入濃度，而非直接從植入區域轉換至非植入區的二元式變化。同樣地，藉由植入而形成的埋藏區(buried region)會在埋藏區與實行植入的表面之間的區域造成一些植入。因此，圖中所繪示的區域為示意性質，而其形狀並非用以繪示裝置之區域的真實形狀，且並非用以限制本發明之範圍。The embodiments described herein in conjunction with the cross-sectional views are illustrative examples (and intermediate architectures) of the idealized embodiments. Therefore, variations in the shapes in the drawings are expected because, for example, manufacturing techniques and/or tolerances. Therefore, the embodiments should not be used to limit the particular shapes of the regions depicted herein, but rather to include variations in the shape resulting from, for example, manufacturing. For example, an implanted region depicted as a rectangle has substantially circular or curved features and/or its edges may have a gradient implant concentration rather than directly transitioning from implanted to non-invasive regions. Binary changes in the implanted area. Likewise, a buried region formed by implantation will cause some implantation in the region between the buried region and the surface on which the implantation is performed. Therefore, the regions illustrated in the figures are illustrative and are not intended to represent the true shape of the region of the device and are not intended to limit the scope of the invention.
除非另有定義，所有在此所使用的詞語(包括技術及科學術語)具有的意義相同於本發明所屬領域具有通常技藝者一般所能理解的意義。進一步須了解的是，這些詞語，例如定義在一般所使用的字典中的這些詞語，應被解譯為具有與相關技藝文獻一致的意義，而不應被解譯為理想化的或者過度正式的意義，除非在此明確地如此定義。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning meaning meaning It should be further understood that these words, such as those defined in the commonly used dictionary, should be interpreted as having a meaning consistent with the relevant technical literature and should not be interpreted as idealized or overly formal. Meaning, unless explicitly defined as such.
以下，將配合附圖詳細解說各實施例。Hereinafter, each embodiment will be explained in detail with reference to the drawings.
第1圖係繪示對應於本發明範例性實施例的靜電卡盤之剖面圖。第2圖係詳細繪示第1圖所示靜電卡盤的靜電部、加熱部及絕緣部之剖面圖。1 is a cross-sectional view showing an electrostatic chuck corresponding to an exemplary embodiment of the present invention. Fig. 2 is a cross-sectional view showing the electrostatic portion, the heating portion, and the insulating portion of the electrostatic chuck shown in Fig. 1 in detail.
請參照第1圖及第2圖，對應於本發明範例性實施例的靜電卡盤100可包括靜電部200、加熱部300、絕緣部400以及主體500。Referring to FIGS. 1 and 2, an electrostatic chuck 100 corresponding to an exemplary embodiment of the present invention may include an electrostatic portion 200, a heating portion 300, an insulating portion 400, and a body 500.
靜電部200可支撐基板10，且因此基板10可位於靜電部200之上。舉例來說，基板10可包括用以製造半導體記憶體裝置的晶圓以及用以製造平板顯示裝置的玻璃板。The electrostatic portion 200 can support the substrate 10, and thus the substrate 10 can be located above the electrostatic portion 200. For example, substrate 10 can include a wafer for fabricating a semiconductor memory device and a glass plate for fabricating a flat panel display device.
靜電電極210可安裝於靜電部200之中，而用以將基板固定至靜電卡盤100的靜電力可由靜電電極210產生。在一實施例中，靜電電極210可包括安裝在靜電部200中的寬板電極。靜電電極210可包括具有相對較低熱延展率的鎢(W)或鉬(Mo)。The electrostatic electrode 210 may be mounted in the electrostatic portion 200, and an electrostatic force for fixing the substrate to the electrostatic chuck 100 may be generated by the electrostatic electrode 210. In an embodiment, the electrostatic electrode 210 may include a wide plate electrode mounted in the electrostatic portion 200. The electrostatic electrode 210 may include tungsten (W) or molybdenum (Mo) having a relatively low thermal elongation.
靜電部200可包括具有氧化鋁(Al2 O3 )或氧化釔(Y2 O3 )的絕緣陶瓷。舉例來說，靜電部200可包括約90%至約96%的氧化鋁，其餘則為氧化鎂(MgO)或氧化矽(SiO2 )。另外，靜電部200可包括約90%或更多的氧化釔(Y2O3)，而其餘則為氧化鋁。The electrostatic portion 200 may include an insulating ceramic having aluminum oxide (Al 2 O 3 ) or yttrium oxide (Y 2 O 3 ). For example, the electrostatic unit 200 can include about 90% to about 96% alumina, the remainder being magnesium oxide (MgO) or silicon oxide (SiO 2). In addition, the electrostatic portion 200 may include about 90% or more of yttrium oxide (Y2O3), and the rest is alumina.
在這樣的情況下，靜電部200可具有約1014 Ωcm 至約1016 Ωcm 的體積阻抗(volume resistance)，且因此可具有充分高的絕緣特性。進一步地，靜電部200可具有約10W/(mK)至約30W/(mK)的第一熱傳導係數。In such a case, the electrostatic portion 200 may have a volume resistance of about 10 14 Ω cm to about 10 16 Ω cm , and thus may have sufficiently high insulation properties. Further, the electrostatic portion 200 may have a first heat transfer coefficient of about 10 W/(mK) to about 30 W/(mK).
加熱部300可位於靜電部200之上，且可包括用以產生熱能的加熱電極310。基板10可透過從加熱電極310產生的熱能而被加熱。The heating portion 300 may be located above the electrostatic portion 200 and may include a heating electrode 310 to generate thermal energy. The substrate 10 is heated by heat energy generated from the heating electrode 310.
舉例來說，加熱電極310可以螺旋狀、重複的凹凸狀或不平坦的形狀而形成，且均勻地設置在加熱部300中。加熱電極310可具有約0.005mm至約0.3mm的厚度、約0.5mm至約10mm的寬度以及約3m至約30m的長度。於一些實施例中，加熱電極310可具有約1Ω至約100Ω的電阻抗，而基板則可被加熱至約0℃至100℃。For example, the heating electrode 310 may be formed in a spiral shape, a repeated uneven shape, or an uneven shape, and is uniformly disposed in the heating portion 300. The heating electrode 310 can have a thickness of from about 0.005 mm to about 0.3 mm, a width of from about 0.5 mm to about 10 mm, and a length of from about 3 m to about 30 m. In some embodiments, the heating electrode 310 can have an electrical impedance of from about 1 Ω to about 100 Ω, and the substrate can be heated to between about 0 ° C and 100 ° C.
在本實施例中，加熱電極310可形成為金屬膏(metal paste)，可包括銀(Ag)、金(Au)、鎳(Ni)、鎢、鉬、鈦(Ti)及其組合物。或者，加熱電極310可透過使用金屬粉末形成，金屬粉末可包括鎢、鉬、鈦及其組合物。或者，加熱電極310可形成為金屬薄膜，可包括金、鎳、鈦、氮化鈦(TiN)及其組合物。In the present embodiment, the heating electrode 310 may be formed as a metal paste, which may include silver (Ag), gold (Au), nickel (Ni), tungsten, molybdenum, titanium (Ti), and combinations thereof. Alternatively, the heating electrode 310 may be formed by using a metal powder, which may include tungsten, molybdenum, titanium, and combinations thereof. Alternatively, the heating electrode 310 may be formed as a metal thin film, which may include gold, nickel, titanium, titanium nitride (TiN), and combinations thereof.
加熱部300可覆蓋加熱電極310的側表面。於一些實施例中，加熱部300可具有與加熱電極310相同的厚度t1，且因此加熱電極310的側表面可被加熱部300完全覆蓋。在本實施例中，加熱部300的上表面可與加熱電極310的上表面共平面(coplanar)，而加熱部300的下表面則與加熱電極310的下表面共平面。因此，加熱部300的上表面以及加熱電極310可與靜電部200接觸，而加熱部300的下表面與加熱電極310可與絕緣部400接觸。The heating portion 300 may cover a side surface of the heating electrode 310. In some embodiments, the heating portion 300 may have the same thickness t1 as the heating electrode 310, and thus the side surface of the heating electrode 310 may be completely covered by the heating portion 300. In the present embodiment, the upper surface of the heating portion 300 may be coplanar with the upper surface of the heating electrode 310, and the lower surface of the heating portion 300 may be coplanar with the lower surface of the heating electrode 310. Therefore, the upper surface of the heating portion 300 and the heating electrode 310 can be in contact with the electrostatic portion 200, and the lower surface of the heating portion 300 and the heating electrode 310 can be in contact with the insulating portion 400.
可覆蓋加熱電極310側表面的加熱部300結構可增進加熱部300的熱傳導性，且因此加熱部300也可作用為另一個加熱電極。也就是說，覆蓋加熱電極310側表面的加熱部300可增大包括加熱電極310的熱源之面積。The structure of the heating portion 300 that can cover the side surface of the heating electrode 310 can enhance the thermal conductivity of the heating portion 300, and thus the heating portion 300 can also function as another heating electrode. That is, the heating portion 300 covering the side surface of the heating electrode 310 can increase the area of the heat source including the heating electrode 310.
於一些實施例中，加熱部300的厚度t1可大於加熱電極310的厚度。當加熱部300的厚度t1約為加熱電極310的1.5倍時，從加熱電極310所產生的熱能被傳導至基板10時效率會很差。在這種情況下，熱能可能需要被產生至超過加熱電極的熱容(thermal capacitance)來加熱基板10至約0℃至100℃的加工溫度，因而加熱電極310會因其過量的熱壓力造成的疲乏而破損。因為這些原因，加熱部300的厚度可小於加熱電極310的厚度約1.5倍。In some embodiments, the thickness t1 of the heating portion 300 may be greater than the thickness of the heating electrode 310. When the thickness t1 of the heating portion 300 is about 1.5 times that of the heating electrode 310, the heat energy generated from the heating electrode 310 is conducted to the substrate 10 with poor efficiency. In this case, thermal energy may need to be generated to exceed the thermal capacitance of the heating electrode to heat the substrate 10 to a processing temperature of about 0 ° C to 100 ° C, and thus the heating electrode 310 may be caused by excessive thermal stress. Tired and broken. For these reasons, the thickness of the heating portion 300 may be less than about 1.5 times the thickness of the heating electrode 310.
加熱部300可包括絕緣陶瓷，且可以螺旋狀、重複的凹凸狀或不平坦的形狀而形成。因此，鄰近的加熱電極可透過加熱部300而彼此相互絕緣。進一步地，加熱部300可具有大於第一熱傳導係數的第二熱傳導係數，第二熱傳導係數的範圍約為10W/(mK)至30W/(mK)。The heating portion 300 may include an insulating ceramic and may be formed in a spiral shape, a repeated uneven shape, or an uneven shape. Therefore, adjacent heating electrodes can be insulated from each other by the heating portion 300. Further, the heating portion 300 may have a second heat transfer coefficient greater than the first heat transfer coefficient, and the second heat transfer coefficient may range from about 10 W/(mK) to 30 W/(mK).
當第二熱傳導係數約小於150W/(mK)，從加熱電極310所產生的熱能會非常緩慢地透過加熱部300及靜電部200傳導至基板10，因而對基板10的加工會耗費很長的加工時間。相對地，當第二熱傳導係數約大於250W/(mK)時，從加熱電極310所產生的熱能會透過加熱部300以及靜電部200以足夠快的速度傳導至基板10。然而，靜電部200以及加熱部300的第一及第二熱傳導係數彼此間的差異，可能會使靜電部200以及加熱部300的溫度隨著加工的進行而出現差異性，導致熱壓力或熱衝擊會被集中至靜電部200。如此，隨著使用靜電卡盤100重複運行加工，靜電部200會因為重複的熱壓力而疲乏破損。When the second heat transfer coefficient is less than about 150 W/(mK), the heat energy generated from the heating electrode 310 is transmitted to the substrate 10 through the heating portion 300 and the electrostatic portion 200 very slowly, so that processing of the substrate 10 takes a long time. time. In contrast, when the second heat transfer coefficient is greater than about 250 W/(mK), heat energy generated from the heating electrode 310 is transmitted to the substrate 10 through the heating portion 300 and the electrostatic portion 200 at a sufficiently fast speed. However, the difference between the first and second heat transfer coefficients of the electrostatic portion 200 and the heating portion 300 may cause the temperature of the electrostatic portion 200 and the heating portion 300 to differ as the processing progresses, resulting in thermal stress or thermal shock. It will be concentrated to the electrostatic portion 200. Thus, as the electrostatic chuck 100 is repeatedly processed, the electrostatic portion 200 may be fatigued and broken due to repeated thermal stress.
據此，第二熱傳導係數之範圍約為150W/(mK)至250W/(mK)，以使從加熱電極310所產生的熱能可被均勻地透過加熱部300傳導至基板10。Accordingly, the second heat transfer coefficient ranges from about 150 W/(mK) to 250 W/(mK) so that thermal energy generated from the heating electrode 310 can be uniformly conducted to the substrate 10 through the heating portion 300.
舉例來說，基於為了達成充足的熱傳導性，加熱部300可包括約90%的氮化鋁，其餘則為氧化鎂或氧化釔。For example, based on the achievement of sufficient thermal conductivity, the heating portion 300 may include about 90% aluminum nitride, with the balance being magnesium oxide or cerium oxide.
在本實施例中，加熱部300可透過黏合製程、膏印刷(paste printing)製程以及沉積製程相對地來形成為陶瓷塊(ceramic bulk)、陶瓷膏以及陶瓷薄層。加熱部300具有與靜電部200相似的體積阻抗，約為108 Ωcm至1016 Ωcm。In this embodiment, the heating portion 300 can be formed into a ceramic bulk, a ceramic paste, and a ceramic thin layer relatively through a bonding process, a paste printing process, and a deposition process. The heating portion 300 has a volume resistance similar to that of the electrostatic portion 200, and is about 10 8 Ωcm to 10 16 Ωcm.
因此，具有加熱電極310的加熱部300以及具有靜電電極210的靜電部200可依此方式設置：具有第二熱傳導係數的加熱部300位於具有第一熱傳導係數的靜電部200之下，且第二熱傳導係數大於第一熱傳導係數。因此，從加熱電極310所產生的熱能首先會均勻地傳導至加熱部300，然後熱能會再因為熱傳導係數的差異而從加熱部300傳導至靜電部200。最後，熱能會從靜電部200均勻地傳導至基板10。Therefore, the heating portion 300 having the heating electrode 310 and the electrostatic portion 200 having the electrostatic electrode 210 may be disposed in such a manner that the heating portion 300 having the second heat transfer coefficient is located below the electrostatic portion 200 having the first heat transfer coefficient, and the second The heat transfer coefficient is greater than the first heat transfer coefficient. Therefore, the thermal energy generated from the heating electrode 310 is first uniformly conducted to the heating portion 300, and then the thermal energy is again conducted from the heating portion 300 to the electrostatic portion 200 due to the difference in thermal conductivity. Finally, thermal energy is uniformly conducted from the electrostatic portion 200 to the substrate 10.
當靜電部200的厚度t2小於1mm時，熱能難以被均勻地從靜電部200傳導至基板，而當t2大於5mm時，熱傳導效率會被大幅降低，使得要將基板加熱至加工溫度會耗費更長的時間。因此，靜電部200可具有約1mm至5mm的厚度。When the thickness t2 of the electrostatic portion 200 is less than 1 mm, heat energy is hardly uniformly conducted from the electrostatic portion 200 to the substrate, and when t2 is larger than 5 mm, the heat transfer efficiency is greatly lowered, so that it takes a longer time to heat the substrate to the processing temperature. time. Therefore, the electrostatic portion 200 may have a thickness of about 1 mm to 5 mm.
絕緣部400可位於加熱部300之下，且防止從加熱電極310所產生的熱能向下傳導至主體500。也就是說，從加熱電極310所產生的熱能可被引導向上流動至靜電部200。因此，絕緣部400可具有小於第一及第二熱傳導係數的第三熱傳導係數。The insulating portion 400 may be positioned below the heating portion 300 and prevent heat energy generated from the heating electrode 310 from being conducted downward to the body 500. That is, the thermal energy generated from the heating electrode 310 can be directed to flow upward to the electrostatic portion 200. Therefore, the insulating portion 400 may have a third heat transfer coefficient smaller than the first and second heat transfer coefficients.
絕緣部400可包括高溫塑料玻璃型陶瓷(high-temperature plastic glass type ceramics)，例如氧化矽、氧化鎂以及氧化鋅(ZnO)。或者，絕緣部400也可包括矽、聚合物以及矽與聚合物的混合，聚合物例如為丙烯樹脂(acryl resin)及環氧樹脂(epoxy resin)。The insulating portion 400 may include high-temperature plastic glass type ceramics such as cerium oxide, magnesium oxide, and zinc oxide (ZnO). Alternatively, the insulating portion 400 may also include ruthenium, a polymer, and a mixture of ruthenium and a polymer, such as an acryl resin and an epoxy resin.
舉例來說，第三熱傳導係數的範圍約在0.5W/(mK)至5W/(mK)，且具有約108 Ωcm至約1016 Ωcm的體積阻抗，其與靜電部200以及加熱部300的體積阻抗相似。For example, the third heat transfer coefficient ranges from about 0.5 W/(mK) to 5 W/(mK), and has a volume impedance of about 10 8 Ωcm to about 10 16 Ωcm, which is combined with the electrostatic portion 200 and the heating portion 300. The volumetric impedance is similar.
當絕緣部400的厚度t3約小於0.05mm時，基板10的溫度分佈會變得不平均，肇因於位於絕緣部400之下的主體500中流通於通道510的冷卻液。進一步地，將熱能傳導至基板10的效率也因為冷卻液而被降低，也因此加熱電極310要產生更多熱能來補償降低的熱傳導效率。更進一步地，因為絕緣部400的厚度t3並不足以防止熱能向下傳導至主體500，所以需要更大量的冷卻液或者冷卻時間來充分冷卻主體500。When the thickness t3 of the insulating portion 400 is less than about 0.05 mm, the temperature distribution of the substrate 10 may become uneven due to the coolant flowing through the passage 510 in the body 500 located below the insulating portion 400. Further, the efficiency of conducting thermal energy to the substrate 10 is also reduced by the coolant, and thus the heating electrode 310 is required to generate more thermal energy to compensate for the reduced heat transfer efficiency. Further, since the thickness t3 of the insulating portion 400 is not sufficient to prevent heat from being conducted downward to the body 500, a larger amount of cooling liquid or cooling time is required to sufficiently cool the body 500.
相對地，當絕緣部400的厚度約大於0.5mm時，即使再增加絕緣部400的厚度，絕緣部400的熱能阻擋效應也不會再提升。因此，絕緣部400的厚度t3的範圍約為0.05mm至0.5mm，使得能絕緣部400在沒有額外厚度的情況下也能阻擋熱能傳導至主體。In contrast, when the thickness of the insulating portion 400 is more than about 0.5 mm, even if the thickness of the insulating portion 400 is further increased, the thermal blocking effect of the insulating portion 400 is not further increased. Therefore, the thickness t3 of the insulating portion 400 ranges from about 0.05 mm to 0.5 mm, so that the insulating portion 400 can block the conduction of thermal energy to the body without an additional thickness.
主體500可位於絕緣部400之下，而黏合層600可插設在主體500以及絕緣部400之間。因此，絕緣部400以及主體500可透過黏合層600互相黏合。主體500以及黏合層600可彼此共同支撐絕緣部400，因此主體500與黏合層600的結合可作為用以支撐絕緣部400的支撐件。The body 500 may be located under the insulating portion 400, and the adhesive layer 600 may be interposed between the body 500 and the insulating portion 400. Therefore, the insulating portion 400 and the body 500 can be bonded to each other through the adhesive layer 600. The body 500 and the adhesive layer 600 can support the insulating portion 400 together with each other, and thus the combination of the body 500 and the adhesive layer 600 can serve as a support for supporting the insulating portion 400.
主體500可包括通道510，使冷卻液流通於通道510中。通道510可被均勻地設置在主體500中，而主體500可防止被從加熱部300傳導來的熱能加熱。The body 500 can include a passage 510 for circulating coolant into the passage 510. The passage 510 may be uniformly disposed in the body 500, and the body 500 may prevent heat energy heated by the heating portion 300 from being heated.
第3圖係繪示用以加工基板且包括第1圖中所示之靜電卡盤的裝置之剖面圖。在第3圖中，與第1圖及2相同的標號表示標示著相同的元件，因此將省略對於相同元件的詳細描述。透過使用第1圖中所示的靜電卡盤100來加工基板的裝置現於下文中稱之加工裝置。Figure 3 is a cross-sectional view showing an apparatus for processing a substrate and including the electrostatic chuck shown in Figure 1. In the third embodiment, the same reference numerals as those in FIGS. 1 and 2 denote the same elements, and thus detailed descriptions of the same elements will be omitted. A device for processing a substrate by using the electrostatic chuck 100 shown in Fig. 1 is hereinafter referred to as a processing device.
請參照第3圖，加工裝置1000可包括加工腔體700、氣體供應器800以及靜電卡盤100。Referring to FIG. 3, the processing apparatus 1000 can include a processing chamber 700, a gas supply 800, and an electrostatic chuck 100.
加工腔體700可包括內部空間，以使基板10於其中被裝載與加工，以製造集成電路裝置如半導體記憶體裝置以及用在平板顯示裝置的驅動電路裝置。舉例來說，蝕刻製程可在加工腔體700中實行於基板10。在蝕刻製程之例中，加工腔體的內部空間可形成真空狀態。The processing chamber 700 can include an internal space for loading and processing the substrate 10 therein to fabricate integrated circuit devices such as semiconductor memory devices and drive circuit devices for use in flat panel display devices. For example, an etch process can be performed on the substrate 10 in the processing cavity 700. In the case of an etching process, the internal space of the processing chamber can be in a vacuum state.
氣體供應器800可連接至加工腔體700，而加工氣體20可被供應進加工腔體700。舉例來說，氣體供應器800可連接至加工腔體700的上部分。Gas supply 800 can be coupled to processing chamber 700 and process gas 20 can be supplied to processing chamber 700. For example, gas supply 800 can be coupled to the upper portion of processing chamber 700.
加工氣體20會隨著在加工腔體700中執行的加工製程而改變。在蝕刻製程之例中，用以產生等離子態(plasma state)的非主動(inactive)氣體、以及用在蝕刻製程的來源氣體，可做為加工氣體20而供應進加工腔體700。高頻率電源可供應至氣體供應器800，以在加工腔體700中產生等離子態。The process gas 20 will vary with the processing process performed in the process chamber 700. In the etching process, the inactive gas for generating a plasma state, and the source gas used in the etching process, may be supplied to the processing chamber 700 as the processing gas 20. A high frequency power source can be supplied to the gas supply 800 to create a plasma state in the processing chamber 700.
靜電卡盤100可位於加工腔體700的下部分，而基板10可被裝載及固定在靜電卡盤100之上。The electrostatic chuck 100 can be located in the lower portion of the processing chamber 700, and the substrate 10 can be loaded and secured over the electrostatic chuck 100.
基板10可透過參照第1圖及第2圖中所詳細描述的靜電卡盤100而被均勻地加熱，因此基板10可在加工腔體700中透過加工氣體20被均勻地加工，如此可降低或最小化加工腔體700中基板10上的加工瑕疵，且可增進在加工裝置1000中製造的集成電路裝置之裝置品質。The substrate 10 can be uniformly heated by referring to the electrostatic chuck 100 described in detail in FIGS. 1 and 2, so that the substrate 10 can be uniformly processed through the processing gas 20 in the processing chamber 700, thus reducing or The processing defects on the substrate 10 in the processing chamber 700 are minimized and the device quality of the integrated circuit device fabricated in the processing device 1000 can be enhanced.
根據本發明的範例性實施例，靜電卡盤可包括用來放置基板的靜電部靜電部、與加熱部位於靜電部之下的加熱部部。具有第二熱傳導係數的加熱部可包括用以產生熱能的加熱電極，而具有第一熱傳導係數的靜電部則可包括用以產生靜電力的靜電電極。靜電卡盤可使用如此的設置來建構：第二熱傳導係數可大於第一熱傳導係數。因此，從加熱電極所產生的熱能首先可被均勻地傳導至加熱部，然後，因為熱傳導係數的差異，熱能會再從加熱部傳導至靜電部。最後，熱能可被均勻地從靜電部傳導至基板，藉以均勻地加熱基板。According to an exemplary embodiment of the present invention, the electrostatic chuck may include an electrostatic portion electrostatic portion for placing the substrate, and a heating portion portion with the heating portion below the electrostatic portion. The heating portion having the second heat transfer coefficient may include a heating electrode to generate thermal energy, and the electrostatic portion having the first heat transfer coefficient may include an electrostatic electrode to generate an electrostatic force. The electrostatic chuck can be constructed using such a setting that the second heat transfer coefficient can be greater than the first heat transfer coefficient. Therefore, the heat energy generated from the heating electrode can be first uniformly conducted to the heating portion, and then, due to the difference in the heat transfer coefficient, the heat energy is again conducted from the heating portion to the electrostatic portion. Finally, thermal energy can be uniformly conducted from the electrostatic portion to the substrate, thereby uniformly heating the substrate.
據此，基板可透過加工氣體在加工腔體中被均勻地加工，因此最小化了在加工腔體中基板上的加工瑕疵，且增進了在加工裝置中製造之集成電路裝置的裝置品質。Accordingly, the substrate is uniformly processed through the processing gas in the processing chamber, thereby minimizing processing defects on the substrate in the processing chamber and improving the device quality of the integrated circuit device fabricated in the processing device.
綜上所述，雖然本發明已以若干較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。據此，所有的這些更動與潤飾皆如同在專利申請範圍中所定義的被包括在本發明的範圍中。在專利申請範圍中，功能(means-plus-function)子句是用以涵蓋在此所描述的結構能執行所述的功能，且不僅涵蓋結構上的等效，也涵蓋了等效的結構。因此，雖然本發明已以若干較佳實施例揭露如上，然其並非用以限定所揭露的特定實施例，對於所揭露及其他的實施例之更動皆被包括在專利申請範圍的範圍之內。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。In view of the above, the present invention has been disclosed in the above-described preferred embodiments, and is not intended to limit the invention, and various modifications may be made without departing from the spirit and scope of the invention. With retouching. Accordingly, all such modifications and refinements are included in the scope of the present invention as defined in the scope of the patent application. In the context of the patent application, a means-plus-function clause is used to cover the functions described in the structure described herein, and encompasses not only structural equivalents but also equivalent structures. Therefore, the present invention has been described in terms of several preferred embodiments, which are not intended to limit the specific embodiments disclosed, and the modifications of the disclosed and other embodiments are included in the scope of the patent application. Therefore, the scope of the invention is defined by the scope of the appended claims.
10‧‧‧基板10‧‧‧Substrate
20‧‧‧加工氣體20‧‧‧Processing gas
100‧‧‧靜電卡盤100‧‧‧Electrostatic chuck
200‧‧‧靜電部200‧‧‧Electrostatic Department
210‧‧‧靜電電極210‧‧‧Electrostatic electrodes
300‧‧‧加熱部300‧‧‧heating department
310‧‧‧加熱電極310‧‧‧heating electrode
400‧‧‧絕緣部400‧‧‧Insulation
500‧‧‧主體500‧‧‧ subject
510‧‧‧通道510‧‧‧ channel
600‧‧‧黏合層600‧‧‧ adhesive layer
700‧‧‧加工腔體700‧‧‧Processing cavity
800‧‧‧氣體供應器800‧‧‧ gas supply
t1‧‧‧第一厚度T1‧‧‧first thickness
t2‧‧‧第二厚度T2‧‧‧second thickness
t3‧‧‧第三厚度T3‧‧‧ third thickness
第1圖係繪示對應於本發明範例性實施例的靜電卡盤之剖面圖。1 is a cross-sectional view showing an electrostatic chuck corresponding to an exemplary embodiment of the present invention.
第2圖係詳細繪示第1圖中所示靜電卡盤的靜電部、加熱部以及絕緣部之剖面圖。Fig. 2 is a cross-sectional view showing the electrostatic portion, the heating portion, and the insulating portion of the electrostatic chuck shown in Fig. 1 in detail.
第3圖係繪示用以加工基板且包括第1圖中所示靜電卡盤的裝置之剖面圖。Figure 3 is a cross-sectional view showing an apparatus for processing a substrate and including the electrostatic chuck shown in Figure 1.
10．．．基板10. . . Substrate
20．．．加工氣體20. . . Processing gas
100．．．靜電卡盤100. . . Electrostatic chuck
200．．．靜電部200. . . Electrostatic part
210．．．靜電電極210. . . Electrostatic electrode
300．．．加熱部300. . . Heating department
310．．．加熱電極310. . . Heating electrode
400．．．絕緣部400. . . Insulation
500．．．主體500. . . main body
510．．．通道510. . . aisle
600．．．黏合層600. . . Adhesive layer
700．．．加工腔體700. . . Processing cavity
800．．．氣體供應器800. . . Gas supply
Claims (10)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100050780A KR101636764B1 (en) | 2010-05-31 | 2010-05-31 | Electrostatic chuck and apparatus for processing a substrate including the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201218243A TW201218243A (en) | 2012-05-01 |
| TWI437617B true TWI437617B (en) | 2014-05-11 |
Family
ID=45067167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100117989A TWI437617B (en) | 2010-05-31 | 2011-05-23 | Electrostatic chuck and apparatus for processing a substrate including the same |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5276751B2 (en) |
| KR (1) | KR101636764B1 (en) |
| TW (1) | TWI437617B (en) |
| WO (1) | WO2011152620A2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6017781B2 (en) * | 2011-12-07 | 2016-11-02 | 新光電気工業株式会社 | Substrate temperature adjustment fixing device and manufacturing method thereof |
| KR101976538B1 (en) * | 2012-02-16 | 2019-05-10 | 주식회사 미코 | Electrostatic chuck and apparatus for processing a substrate including the same |
| JP6342769B2 (en) * | 2014-09-30 | 2018-06-13 | 日本特殊陶業株式会社 | Electrostatic chuck |
| JP6392612B2 (en) * | 2014-09-30 | 2018-09-19 | 日本特殊陶業株式会社 | Electrostatic chuck |
| CN110911332B (en) * | 2018-09-14 | 2022-11-25 | 北京北方华创微电子装备有限公司 | Electrostatic chuck |
| JP7108586B2 (en) * | 2019-08-16 | 2022-07-28 | 日本特殊陶業株式会社 | holding device |
| JP7184726B2 (en) * | 2019-10-02 | 2022-12-06 | 日本特殊陶業株式会社 | Electrostatic chuck manufacturing method and composite member manufacturing method |
| CN112863983B (en) * | 2019-11-28 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly for plasma processing apparatus and plasma processing apparatus |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09260474A (en) * | 1996-03-22 | 1997-10-03 | Sony Corp | Electrostatic chuck and wafer stage |
| US5886864A (en) * | 1996-12-02 | 1999-03-23 | Applied Materials, Inc. | Substrate support member for uniform heating of a substrate |
| EP1219141B1 (en) * | 1999-09-29 | 2010-12-15 | Tokyo Electron Limited | Multi-zone resistance heater |
| JP4349952B2 (en) * | 2004-03-24 | 2009-10-21 | 京セラ株式会社 | Wafer support member and manufacturing method thereof |
| JP4398306B2 (en) * | 2004-06-03 | 2010-01-13 | 日本特殊陶業株式会社 | Electrostatic chuck and method for manufacturing ceramic electrostatic chuck |
| US7544251B2 (en) * | 2004-10-07 | 2009-06-09 | Applied Materials, Inc. | Method and apparatus for controlling temperature of a substrate |
| JP2007043042A (en) * | 2005-07-07 | 2007-02-15 | Sumitomo Electric Ind Ltd | Wafer holder and manufacturing method thereof, wafer prober mounting same, and semiconductor heating device |
| JP2007317772A (en) * | 2006-05-24 | 2007-12-06 | Shinko Electric Ind Co Ltd | Electrostatic chuck device |
| JP5018244B2 (en) * | 2007-05-30 | 2012-09-05 | 住友大阪セメント株式会社 | Electrostatic chuck |
| JP2009054932A (en) * | 2007-08-29 | 2009-03-12 | Shinko Electric Ind Co Ltd | Electrostatic chuck |
-
2010
- 2010-05-31 KR KR1020100050780A patent/KR101636764B1/en active IP Right Grant
-
2011
- 2011-05-17 WO PCT/KR2011/003625 patent/WO2011152620A2/en active Application Filing
- 2011-05-17 JP JP2012539829A patent/JP5276751B2/en active Active
- 2011-05-23 TW TW100117989A patent/TWI437617B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110131376A (en) | 2011-12-07 |
| WO2011152620A3 (en) | 2012-04-19 |
| JP2013511162A (en) | 2013-03-28 |
| TW201218243A (en) | 2012-05-01 |
| JP5276751B2 (en) | 2013-08-28 |
| WO2011152620A2 (en) | 2011-12-08 |
| KR101636764B1 (en) | 2016-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI437617B (en) | Electrostatic chuck and apparatus for processing a substrate including the same | |
| US9984912B2 (en) | Locally heated multi-zone substrate support | |
| KR100778612B1 (en) | Substrate Processing Apparatus | |
| JP6077301B2 (en) | Electrostatic chuck | |
| JP3485390B2 (en) | Electrostatic chuck | |
| US7763831B2 (en) | Heating device | |
| TWI718133B (en) | Electrostatic chuck device | |
| TW201133702A (en) | Electrostatic chuck device | |
| JP6905399B2 (en) | Board fixing device | |
| JP2008153194A (en) | Heating device | |
| JP2018006737A (en) | Holding device and manufacturing method of holding device | |
| US11056369B2 (en) | Substrate holding apparatus | |
| JP6580999B2 (en) | Holding device | |
| JP2004071647A (en) | Complex heater | |
| JPH0982788A (en) | Electrostatic chuck and manufacture thereof | |
| JP2000021962A (en) | Electrostatic chuck device | |
| JP6667386B2 (en) | Holding device | |
| KR101829227B1 (en) | Electrostatic chuck improved in electrostatic plate structure | |
| JP6695204B2 (en) | Holding device | |
| KR20130094578A (en) | Electrostatic chuck and apparatus for processing a substrate including the same | |
| JP7189715B2 (en) | electrostatic chuck | |
| TW202240757A (en) | Electrostatic chuck and substrate fixing device | |
| JP2023141972A (en) | Ceramic substrate, manufacturing method for the same, electrostatic chuck, substrate fixing device, and package for semiconductor device | |
| JP2003229474A (en) | Cooling unit member |