TWI420717B - Method for making surface acoustic wave sensor - Google Patents
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本發明涉及一種表面聲波感測器之製作方法。 The invention relates to a method for fabricating a surface acoustic wave sensor.
隨著生活水平之提升，人們越來越重視環境品質之管理，各式各樣之感測器產品開始因應而生，其中，表面聲波感測器由於靈敏度高、可靠性高，體積輕巧以及低廉之價格等優勢，被大量之開發成許多感測器元件(請參見P3K-3 Surface Acoustic Waves in an Infinite Plate of Functionally Graded Materials，Ultrasonics Symposium,2006.IEEE，2-6 Oct.2006，Page(s)：2242-2245)。例如：用於偵測空氣粒子之氣體感測器、檢測水溶液之液體感測器、用於測量環境因數之壓力、溫度、濕度感測器，以及使用於生物體上之各類生物感測器等。該等感測器配合特定之感測薄膜，可於功能與待測目標物上做更進一步之細分。 With the improvement of living standards, people pay more and more attention to the management of environmental quality, and various kinds of sensor products have begun to respond. Among them, surface acoustic wave sensors are high in sensitivity, high in reliability, light in size and low in cost. The price and other advantages have been developed into a large number of sensor components (see P3K-3 Surface Acoustic Waves in an Infinite Plate of Functionally Graded Materials, Ultrasonics Symposium, 2006. IEEE, 2-6 Oct. 2006, Page (s ): 2242-2245). For example: gas sensors for detecting airborne particles, liquid sensors for detecting aqueous solutions, pressures for measuring environmental factors, temperature, humidity sensors, and various types of biosensors for use on living organisms Wait. The sensors are combined with a specific sensing film to further subdivide the function and the object to be tested.
表面聲波感測器包括一壓電基材、設置於壓電基材表面之輸入叉指電極(Interdigital Transducers,IDT)、輸出叉指電極以及設置於壓電基材表面且位於輸入叉指電極與輸出叉指電極之間之感測薄膜，該感測薄膜用於吸附氣體或液體中之微量待測分子。當於輸入叉指電極加上交流訊號後，壓電基材因逆壓電效應產生應變，將電能轉為聲波能，進而產生表面聲波，經由壓電基材 之壓電材料傳遞聲波能至輸出叉指電極，再通過正壓電效應將聲波訊號轉為電訊號輸出，以提供給外部儀器精確地解讀感測薄膜表面上之訊號之變化情形。當表面聲波傳播至壓電基材時，感測薄膜之吸附造成感測薄膜上微量之品質改變，由於品質載入效應(mass loading effect)影響，通過吸附特定氣體之感測薄膜之聲波能，將會改變其原先之傳播特性，而使得聲波之相位速度與衰減量產生某種程度之漂移量，偵測這些諧振頻率之漂移訊號即可定量分析其吸附於壓電材料表面之待測分子濃度。 The surface acoustic wave sensor comprises a piezoelectric substrate, an input interdigital transducer (IDT) disposed on the surface of the piezoelectric substrate, an output interdigital electrode, and an electrode disposed on the surface of the piezoelectric substrate and located at the input interdigital electrode The sensing film between the interdigital electrodes is output, and the sensing film is used to adsorb a trace amount of the molecule to be tested in a gas or a liquid. When an AC signal is applied to the input interdigital electrode, the piezoelectric substrate is strained by the inverse piezoelectric effect, and the electric energy is converted into acoustic energy, thereby generating surface acoustic waves, via the piezoelectric substrate. The piezoelectric material transmits acoustic energy to the output interdigital electrode, and then converts the acoustic signal into an electrical signal output through a positive piezoelectric effect to provide an external instrument to accurately interpret the change of the signal on the surface of the sensing film. When the surface acoustic wave propagates to the piezoelectric substrate, the adsorption of the sensing film causes a slight change in the quality of the sensing film, and the sound wave energy of the sensing film is absorbed by the adsorption of the specific gas due to the influence of the mass loading effect. It will change its original propagation characteristics, and cause a certain amount of drift in the phase velocity and attenuation of the acoustic wave. Detecting the drift signal of these resonant frequencies can quantitatively analyze the concentration of the molecule to be tested adsorbed on the surface of the piezoelectric material. .
感測薄膜通常採用化學氣相沈積法(Chemical Vapor Deposition，CVD)形成於壓電基材表面，然而，這種方法易造成感測薄膜表面不均勻，且與待測物接觸面積較小。 The sensing film is usually formed on the surface of the piezoelectric substrate by Chemical Vapor Deposition (CVD). However, this method is liable to cause unevenness in the surface of the sensing film and a small contact area with the object to be tested.
有鑒於此，有必要提供一種感測薄膜表面均勻且與待測物接觸面積較大之表面聲波感測器之製作方法。 In view of the above, it is necessary to provide a method of fabricating a surface acoustic wave sensor that senses a uniform surface of the film and has a large contact area with the object to be tested.
一表面聲波感測器製作方法，包括以下步驟：於一壓電基材表面鍍一感測材料層；採用奈米壓印方法於該感測材料層表面製作預定圖案；於鍍該感測材料層之步驟之前或於該感測材料層表面製作預定圖案之後，於壓電基板表面之位於該感測材料層之相對兩側形成輸入叉指電極及輸出叉指電極，得到一表面聲波感測器。 A surface acoustic wave sensor manufacturing method comprises the steps of: plating a sensing material layer on a surface of a piezoelectric substrate; forming a predetermined pattern on the surface of the sensing material layer by using a nano imprinting method; and plating the sensing material After the step of layer or after preparing a predetermined pattern on the surface of the sensing material layer, an input interdigital electrode and an output interdigital electrode are formed on opposite sides of the sensing material layer on the surface of the piezoelectric substrate to obtain a surface acoustic wave sensing. Device.
相較於先前技術，該表面聲波感測器之製作方法採用奈米壓印方法於感測材料層表面形成之預定圖案之精度可達到奈米級，因此可使感測薄膜表面均勻；且由於感測薄膜表面形成之圖案尺寸精度為奈米級，可使其與待測物質具有較大之接觸面積，提高感測效率及精度。另外，利用奈米壓印方法形成感測薄膜製程簡單， 適用於批量生產。 Compared with the prior art, the surface acoustic wave sensor is manufactured by using a nanoimprint method to achieve a predetermined pattern on the surface of the sensing material layer with an accuracy of nanometer level, thereby making the surface of the sensing film uniform; The dimensional accuracy of the pattern formed on the surface of the sensing film is nanometer, which can make a large contact area with the substance to be tested, and improve the sensing efficiency and precision. In addition, the process of forming the sensing film by using the nano imprint method is simple, Suitable for mass production.
20‧‧‧壓電基材 20‧‧‧Piezo substrate
22‧‧‧輸入叉指電極 22‧‧‧Input finger electrode
24‧‧‧輸出叉指電極 24‧‧‧ Output finger electrode
26‧‧‧感測材料層 26‧‧‧Sensor material layer
28‧‧‧高分子材料層 28‧‧‧ Polymer layer
30‧‧‧模仁 30‧‧‧Men
302、462‧‧‧基片 302, 462‧‧‧ substrates
304、464‧‧‧凸起 304, 464‧‧ ‧ raised
32‧‧‧感測薄膜 32‧‧‧Sensing film
40‧‧‧表面聲波感測器 40‧‧‧Surface Acoustic Sensor
42‧‧‧有機過渡層 42‧‧‧Organic transition layer
44‧‧‧壓印層 44‧‧‧ Imprint
46‧‧‧模仁 46‧‧‧Men
48‧‧‧紫外光束 48‧‧‧UV beam
圖1係本發明實施例表面聲波感測器之製作方法之流程圖。 1 is a flow chart of a method for fabricating a surface acoustic wave sensor according to an embodiment of the present invention.
圖2係表面形成有叉指電極之壓電基材之立體示意圖。 2 is a schematic perspective view of a piezoelectric substrate having an interdigital electrode formed on its surface.
圖3係表面形成有叉指電極及感測材料層之壓電基材之立體示意圖。 3 is a schematic perspective view of a piezoelectric substrate having an interdigital electrode and a sensing material layer formed on its surface.
圖4係圖1之製作方法中感測薄膜形成方法之過程示意圖。 4 is a schematic view showing the process of the method for forming a sensing film in the manufacturing method of FIG. 1.
圖5係由圖1所示方法所製作之表面聲波感測器之立體示意圖。 Figure 5 is a perspective view of a surface acoustic wave sensor fabricated by the method of Figure 1.
圖6係圖1中之製作方法中感測薄膜另一種形成方法之過程示意圖。 Fig. 6 is a schematic view showing the process of forming another method of sensing a film in the manufacturing method of Fig. 1.
下面將結合附圖對本發明作進一步詳細說明。 The invention will now be described in further detail with reference to the accompanying drawings.
請參閱圖1，本發明實施例提供一種表面聲波感測器之製作方法，其包括以下步驟：步驟102：於一壓電基材表面形成輸入叉指電極與輸出叉指電極；步驟104：於輸入叉指電極與輸出叉指電極之間之壓電基材表面鍍一感測材料層；步驟106：採用奈米壓印方法於感測材料層表面製作預定圖案，以形成感測薄膜，得到一表面聲波感測器。 Referring to FIG. 1 , an embodiment of the present invention provides a method for fabricating a surface acoustic wave sensor, which includes the following steps: Step 102: forming an input interdigital electrode and an output interdigital electrode on a surface of a piezoelectric substrate; Step 104: The surface of the piezoelectric substrate between the input interdigital electrode and the output interdigital electrode is plated with a sensing material layer; Step 106: using a nanoimprint method to form a predetermined pattern on the surface of the sensing material layer to form a sensing film, A surface acoustic wave sensor.
請參閱圖2至圖5，該表面聲波感測器之製作方法具體如下所述： Referring to FIG. 2 to FIG. 5, the method for fabricating the surface acoustic wave sensor is as follows:
請參閱圖2，於步驟102中，提供一壓電基材20，該壓電基材20可為一壓電基板，也可為形成於基板表面之壓電膜層，本實施例中，壓電基材20為一壓電基板。壓電基材20呈長方體形狀，其由壓電材料製成，該壓電材料可為但不限於以下幾類：單晶類，如石英(quartz)、鈮酸鋰(LiNbO3)、鉭酸鋰(LiTaO3)等；薄膜類，如氮化鋁(AlN)、氧化鋅(ZnO)；陶瓷類，如鈦酸鋇、鋯鈦酸鉛(PZT)等；聚合物類，如聚偏氟乙稀(Polyvinylidene Fluoride，PVDF)。 Referring to FIG. 2, in step 102, a piezoelectric substrate 20 is provided. The piezoelectric substrate 20 can be a piezoelectric substrate or a piezoelectric film layer formed on the surface of the substrate. In this embodiment, the pressure is The electrical substrate 20 is a piezoelectric substrate. The piezoelectric substrate 20 has a rectangular parallelepiped shape and is made of a piezoelectric material, which may be, but not limited to, the following types: single crystals such as quartz, lithium niobate (LiNbO3), lithium niobate. (LiTaO3), etc.; thin films such as aluminum nitride (AlN), zinc oxide (ZnO); ceramics such as barium titanate, lead zirconate titanate (PZT), etc.; polymers such as polyvinylidene fluoride ( Polyvinylidene Fluoride, PVDF).
該壓電基材20之表面形成一輸入叉指電極22及一輸出叉指電極24，該輸入叉指電極22及輸出叉指電極24可由微影蝕刻或微機電製程等方法製作於壓電基材20之表面。 An input interdigital electrode 22 and an output interdigital electrode 24 are formed on the surface of the piezoelectric substrate 20. The input interdigital electrode 22 and the output interdigital electrode 24 can be fabricated on the piezoelectric substrate by a method such as photolithography or microelectromechanical processing. The surface of the material 20.
請參閱圖3，於步驟104中，於輸入叉指電極22與輸出叉指電極24之間之壓電基材20表面鍍一感測材料層26，該感測材料層26可採用但不限於濺鍍法形成於壓電基材20之表面，該濺鍍法包括輝光放電、磁控濺鍍、射頻濺鍍、反應性濺鍍、迴旋波濺鍍等。 Referring to FIG. 3, in step 104, a surface of the piezoelectric substrate 20 between the input interdigital electrode 22 and the output interdigital electrode 24 is plated with a sensing material layer 26, which may be, but is not limited to, Sputtering is formed on the surface of the piezoelectric substrate 20. The sputtering method includes glow discharge, magnetron sputtering, radio frequency sputtering, reactive sputtering, cyclotron sputtering, and the like.
感測材料層26之材料選擇取決於其所感測之物質，如感測紫外光線時可採用氧化鋅(ZnO)，感測氫氣時可採用氧化鋅或鈀(Pd)，感測一氧化碳時可採用二氧化錫(SnO2)。 The material selection of the sensing material layer 26 depends on the substance to be sensed. For example, zinc oxide (ZnO) may be used for sensing ultraviolet light, zinc oxide or palladium (Pd) may be used for sensing hydrogen gas, and carbon monoxide may be used for sensing carbon monoxide. Tin dioxide (SnO2).
請參閱圖4，於步驟106中，採用一種奈米壓印方法於感測材料層26表面製作預定圖案，以形成感測薄膜，本實施方式為採用熱壓式奈米壓印方法，採用熱壓式奈米壓印方法於感測材料層26表面形成預定圖案之過程如下： Referring to FIG. 4, in step 106, a predetermined pattern is formed on the surface of the sensing material layer 26 by using a nano imprinting method to form a sensing film. In this embodiment, a hot pressing type nano imprinting method is adopted, and heat is applied. The process of forming a predetermined pattern on the surface of the sensing material layer 26 by the pressure nanoimprint method is as follows:
請參閱圖4(a)及圖4(b)，於感測材料層26表面塗佈一層高分 子材料層28，並加熱該高分子材料層28，加熱溫度高於該高分子材料層28之玻璃轉化溫度，以使高分子材料層28軟化。此步驟之加熱溫度不宜過高，否則會延長模壓週期。本實施例中，該高分子材料層28之材料為聚甲基丙烯酸甲酯(Polymethyl Methacrylate，PMMA)，其玻璃轉化溫度為104℃，則此步驟之加熱溫度可為105℃至110℃。 Referring to FIG. 4(a) and FIG. 4(b), a layer of high score is applied on the surface of the sensing material layer 26. The sub-material layer 28 heats the polymer material layer 28 at a heating temperature higher than the glass transition temperature of the polymer material layer 28 to soften the polymer material layer 28. The heating temperature of this step should not be too high, otherwise the molding cycle will be extended. In this embodiment, the material of the polymer material layer 28 is polymethyl methacrylate (PMMA), and the glass transition temperature is 104 ° C. The heating temperature in this step may be 105 ° C to 110 ° C.
請參閱圖4(c)，提供一奈米壓印模仁30，該奈米壓印模仁30包括一基片302及複數凸起304，該複數凸起304設置於該基片302之表面且與基片302一體成型。複數凸起304組成一預定圖案，用於壓印高分子材料層28，以於高分子材料層28表面形成與該複數凸起304相對應之圖案，本實施例中，該凸起304為圓柱狀。模仁30之材料通常具有如下性質：高硬度、大壓縮強度、大抗拉強度，如此則可減少模仁30之變形與磨損；高熱導率及低熱膨脹係數，使得於加熱過程中模仁30之熱變形很小。模仁30通常用採用矽，氧化矽，氮化矽、金剛石等材料製成。凸起304之尺寸精度可達到10奈米。 Referring to FIG. 4(c), a nanoimprint mold core 30 is provided. The nanoimprint mold core 30 includes a substrate 302 and a plurality of protrusions 304. The plurality of protrusions 304 are disposed on the surface of the substrate 302. And formed integrally with the substrate 302. The plurality of protrusions 304 form a predetermined pattern for embossing the polymer material layer 28 to form a pattern corresponding to the plurality of protrusions 304 on the surface of the polymer material layer 28. In the embodiment, the protrusions 304 are cylindrical. shape. The material of the mold core 30 generally has the following properties: high hardness, large compressive strength, and large tensile strength, so that deformation and wear of the mold core 30 can be reduced; high thermal conductivity and low thermal expansion coefficient, so that the mold core 30 during heating The thermal deformation is small. The mold core 30 is usually made of a material such as tantalum, niobium oxide, tantalum nitride or diamond. The size of the protrusion 304 can reach 10 nm.
將該模仁30之複數凸起304對準高分子材料層28，並對高分子材料層28施加壓力，使高分子材料層28充滿該複數凸起304之間之空腔。 The plurality of protrusions 304 of the mold core 30 are aligned with the polymer material layer 28, and a pressure is applied to the polymer material layer 28 so that the polymer material layer 28 fills the cavity between the plurality of protrusions 304.
模壓過程結束後，高分子材料層28冷卻到其玻璃轉化溫度以下，以使圖案化之高分子材料層28固化，提供足夠大之機械強度。 After the molding process is completed, the polymer material layer 28 is cooled below its glass transition temperature to cure the patterned polymer material layer 28 to provide sufficient mechanical strength.
脫模，移走該模仁30，至此，該複數凸起304之圖案形成於高分子材料層28。 The mold core 30 is removed from the mold, and the pattern of the plurality of protrusions 304 is formed on the polymer material layer 28.
請參閱圖4(d)，經過上述步驟後，原高分子材料層28被壓得凹下去之那些部分便成了極薄之殘留高分子材料層，利用各向異性反應離子刻蝕方法將該殘留高分子材料層去除。 Referring to FIG. 4(d), after the above steps, those portions of the original polymer material layer 28 which are pressed to be recessed become a very thin residual polymer material layer, which is anisotropic reactive ion etching method. The residual polymer material layer is removed.
請參閱圖4(e)，將高分子材料層28所形成之圖案轉移至該感測材料層26。本實施例中，該轉移方法為刻蝕(etch)方法，即以上一步驟中形成之圖案化之高分子材料層28為掩模，對感測材料層26進行選擇性刻蝕，從而將上述凸起所形成之圖案轉移至感測材料層26。可理解，本步驟還可採用剝離(strip)工藝來轉移圖案，並不限於本實施例。 Referring to FIG. 4(e), the pattern formed by the polymer material layer 28 is transferred to the sensing material layer 26. In this embodiment, the transfer method is an etch method, that is, the patterned polymer material layer 28 formed in the above step is used as a mask, and the sensing material layer 26 is selectively etched, thereby The pattern formed by the bumps is transferred to the layer of sensing material 26. It can be understood that this step can also use a strip process to transfer the pattern, and is not limited to the embodiment.
請參閱圖4(f)及圖5，去除感測材料層26表面殘餘之高分子材料層28，得到一圖案化之感測薄膜32。至此，一表面聲波感測器40製作完成。本實施例中，形成之感測薄膜32之圖案為陣列式排列之圓形孔，該圓形孔之徑向截面大小與凸起304之徑向截面大小相同。可理解，該圖案也可根據實際需要設定。 Referring to FIG. 4(f) and FIG. 5, the polymer material layer 28 remaining on the surface of the sensing material layer 26 is removed to obtain a patterned sensing film 32. So far, a surface acoustic wave sensor 40 is completed. In this embodiment, the pattern of the sensing film 32 formed is an array of circular holes having a radial cross-sectional size that is the same as the radial cross-section of the protrusions 304. It can be understood that the pattern can also be set according to actual needs.
另外，形成該輸入叉指電極22及輸出叉指電極24之步驟也可與形成感測薄膜32之步驟互換，並不限於本實施例。 In addition, the steps of forming the input interdigital electrode 22 and the output interdigital electrode 24 may be interchanged with the step of forming the sensing film 32, and are not limited to the embodiment.
請參閱圖6，為本發明實施例中於感測材料層26表面形成預定圖案之另一種實施方式，本實施方式採用紫外線基奈米壓印方法，其具體過程如下： Please refer to FIG. 6 , which illustrates another embodiment of forming a predetermined pattern on the surface of the sensing material layer 26 according to an embodiment of the present invention. The embodiment adopts an ultraviolet ray imprinting method, and the specific process thereof is as follows:
請參閱圖6(a)和圖6(b)，於感測材料層26表面塗佈一層有機過渡層42，該有機過渡層42之厚度較薄，有機過渡層42由有機材料製成，如PMMA。該有機過渡層42一般採用旋塗法塗佈於感測材料層26之表面。 Referring to FIG. 6(a) and FIG. 6(b), an organic transition layer 42 is coated on the surface of the sensing material layer 26. The thickness of the organic transition layer 42 is thin, and the organic transition layer 42 is made of an organic material, such as PMMA. The organic transition layer 42 is typically applied to the surface of the sensing material layer 26 by spin coating.
請參閱圖6(c)，於該有機過渡層42之表面塗佈一層壓印層44，該壓印層44一般為於室溫下具有很好流動性之高分子材料或有機溶液等，且該壓印層44具有紫外線固化之性質，如紫外固化有機矽溶液。 Referring to FIG. 6(c), a surface of the organic transition layer 42 is coated with a laminate layer 44, which is generally a polymer material or an organic solution having good fluidity at room temperature, and the like. The embossed layer 44 has ultraviolet curing properties such as an ultraviolet curable organic hydrazine solution.
請參閱圖6(d)和圖6(e)，提供一奈米壓印模仁46，該奈米壓印模仁46包括一基片462及複數凸起464，該複數凸起464設置於該基片462之表面且與基片462一體成型。該複數凸起464形成一預定圖案，該複數凸起464之間形成空腔。模仁46可採用石英玻璃或聚二甲基矽氧烷等材料製成，凸起464之尺寸精度可達到20奈米。 Referring to FIG. 6(d) and FIG. 6(e), a nanoimprint mold core 46 is provided. The nanoimprint mold core 46 includes a substrate 462 and a plurality of protrusions 464. The plurality of protrusions 464 are disposed on The surface of the substrate 462 is integrally formed with the substrate 462. The plurality of protrusions 464 form a predetermined pattern, and a cavity is formed between the plurality of protrusions 464. The mold core 46 can be made of quartz glass or polydimethyl siloxane, and the size of the protrusion 464 can reach 20 nm.
將模仁46之複數凸起464對準壓印層44，並向壓印層44移動，使壓印層44之材料充滿該複數凸起464之間之空腔。 The plurality of protrusions 464 of the mold core 46 are aligned with the embossed layer 44 and moved toward the embossed layer 44 such that the material of the embossed layer 44 fills the cavity between the plurality of protrusions 464.
利用紫外光束48照射壓印層44，使壓印層44固化。 The embossed layer 44 is irradiated with an ultraviolet beam 48 to cure the embossed layer 44.
脫模，移走該模仁30，至此，該複數凸起464之圖案形成於壓印層44。 The mold core 30 is removed from the mold, and the pattern of the plurality of protrusions 464 is formed on the embossed layer 44.
請參閱圖6(f)及圖6(g)，利用鹵素刻蝕、反應離子刻蝕等方法除去壓印層44凹下去部分之材料以及對應於該凹下去部分之有機過渡層42。 Referring to FIG. 6(f) and FIG. 6(g), the material of the recessed portion of the imprint layer 44 and the organic transition layer 42 corresponding to the recessed portion are removed by halogen etching, reactive ion etching or the like.
請參閱圖6(h)，將有機過渡層42所形成之圖案轉移至該感測材料層26。本實施例中，該轉移方法為刻蝕方法，即以上一步驟中形成之圖案化之壓印層44及有機過渡層42為掩模，對感測材料層26進行選擇性刻蝕，從而將上述凸起所形成之圖案轉移至感測材料層26。可理解，本步驟還可採用剝離技術來轉移圖案，並不限於 本實施例。 Referring to FIG. 6(h), the pattern formed by the organic transition layer 42 is transferred to the sensing material layer 26. In this embodiment, the transfer method is an etching method, that is, the patterned imprint layer 44 and the organic transition layer 42 formed in the above step are used as a mask, and the sensing material layer 26 is selectively etched, thereby The pattern formed by the protrusions is transferred to the sensing material layer 26. It can be understood that this step can also use the stripping technology to transfer the pattern, which is not limited to This embodiment.
請參閱圖6(i)，去除感測材料層26表面殘餘之壓印層44和有機過渡層42，得到如圖5所示之圖案化之感測薄膜32。 Referring to FIG. 6(i), the embossed layer 44 and the organic transition layer 42 remaining on the surface of the sensing material layer 26 are removed to obtain a patterned sensing film 32 as shown in FIG.
可理解，形成感測薄膜32之方法也可採用其他奈米壓印技術，並不限於本實施例。 It can be understood that the method of forming the sensing film 32 can also adopt other nano imprinting techniques, and is not limited to the embodiment.
相較於先前技術，本實施例採用奈米壓印方法製作感測薄膜32，由於感測薄膜32表面形成奈米級尺寸精度之預定圖案，因此可使感測薄膜32表面均勻，且由於感測薄膜32表面形成有奈米級精度圖案，可使其與待測物質具有較大之接觸面積，提高感測效率及精度。另外，利用奈米壓印方法形成感測薄膜製程簡單，適用於批量生產。 Compared with the prior art, the present embodiment uses the nano imprint method to fabricate the sensing film 32. Since the surface of the sensing film 32 forms a predetermined pattern of nanometer dimensional accuracy, the surface of the sensing film 32 can be made uniform, and the sense is felt. The surface of the measuring film 32 is formed with a nano-level precision pattern, which can make a large contact area with the substance to be tested, and improve the sensing efficiency and precision. In addition, the use of the nanoimprint method to form the sensing film is simple and suitable for mass production.
綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施方式，自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士爰依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
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|---|---|---|---|---|
| US20060032312A1 (en) * | 2002-04-17 | 2006-02-16 | Auner Gregory W | Acoustic wave sensor apparatus, method and system using wide bandgap materials |
| WO2006043299A1 (en) * | 2004-10-22 | 2006-04-27 | Saes Getters S.P.A. | Surface acoustic wave gas sensor with sensitive getter layer and process for its manufacture |
| US20060192041A1 (en) * | 2004-12-22 | 2006-08-31 | Sheldon Affleck | Method and apparatus for moving agricultural commodities |
| EP1700680A1 (en) * | 2005-03-09 | 2006-09-13 | EPFL Ecole Polytechnique Fédérale de Lausanne | Easy release fluoropolymer molds for micro- and nano-pattern replication |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060032312A1 (en) * | 2002-04-17 | 2006-02-16 | Auner Gregory W | Acoustic wave sensor apparatus, method and system using wide bandgap materials |
| WO2006043299A1 (en) * | 2004-10-22 | 2006-04-27 | Saes Getters S.P.A. | Surface acoustic wave gas sensor with sensitive getter layer and process for its manufacture |
| US20060192041A1 (en) * | 2004-12-22 | 2006-08-31 | Sheldon Affleck | Method and apparatus for moving agricultural commodities |
| EP1700680A1 (en) * | 2005-03-09 | 2006-09-13 | EPFL Ecole Polytechnique Fédérale de Lausanne | Easy release fluoropolymer molds for micro- and nano-pattern replication |
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