TWI417338B - 半導體密封用環氧樹脂組成物及半導體裝置 - Google Patents
半導體密封用環氧樹脂組成物及半導體裝置 Download PDFInfo
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- TWI417338B TWI417338B TW96143165A TW96143165A TWI417338B TW I417338 B TWI417338 B TW I417338B TW 96143165 A TW96143165 A TW 96143165A TW 96143165 A TW96143165 A TW 96143165A TW I417338 B TWI417338 B TW I417338B
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Description
本發明係關於半導體密封用環氧樹脂組成物及半導體裝置。
近年來之電子器材之小型化、輕量化、高機能化使得所使用之半導體元件(以下,亦稱為「元件」、「晶片」)之高密集化加速。與此相呼應,半導體裝置(以下,亦稱為「半導體封裝體」或「封裝體」)中,相對於以往之構造的封裝體,區域表面安裝型半導體封裝體之需要量正日益增加。
區域表面安裝型半導體封裝體,於以往之以四方扁平安裝(以下、亦稱為「QFP」)、小外型封裝(以下、亦稱為「SOP」)為代表之表面安裝封裝體中,係因應著對於多引腳(pin)化、高速化的要求而開發至接近其界限者。作為其代表例,可舉出球柵陣列(以下,亦稱為BGA)、或追求更小型化之晶片尺寸封裝(以下,亦稱為「CSP」)。作為區域表面安裝型半導體封裝體之構造,其特徵係在以雙順丁烯二醯亞胺-三樹脂(以下,亦稱為「BT」樹脂)/銅箔電路基板為代表之硬質電路基板、及以聚醯亞胺樹脂薄膜/銅電路基板為代表之可撓性電路基板的單面上搭載半導體元件,在該元件搭載面、亦即在基板的單面上以半導體密封用樹脂組成物(以下,亦稱為「密封材」、「密封樹脂」)等進行成形、密封。又,於基板之元件搭載面之相反面上並排形成格子狀的焊球般的突起電極,進行與將表面安裝封裝體之母板的接合。再者,作為搭載元件之基板,係考慮過除了上述有機電路基板之外,亦使用導線框架等之金屬基板的構造。
通常,此等區域表面安裝型半導體封裝體之構造,係只對基板之元件搭載面以樹脂組成物進行密封,焊球形成面則不進行密封,成為單面密封的形態。極少的情況下,於使用導線框架等金屬基板作為搭載元件的基板之情形等下,於焊球形成面上雖有數十μm程度的密封樹脂層存在,但由於在元件搭載面形成有數百μm至數mm程度的密封樹脂層,故實質上為單面密封。因而,因有機基板或金屬基板與樹脂組成物之硬化物之間的熱膨脹、熱收縮之不協調,或因樹脂組成物之成形、硬化時之硬化收縮所造成的影響,區域表面安裝型半導體封裝體上於剛成形後將容易發生翹曲。又,區域表面安裝型半導體封裝體通常係於成形後進行後硬化,但有時由於後硬化時之再加熱會使得翹曲量更為增大,故於以搬送裝置進行封裝體的移送時會有造成妨礙之不良情形的可能性。
區域表面安裝型半導體封裝體之密封成形後之製造製程依序大略區分為a)上焊球步驟、b)乾燥步驟、c)母板安裝步驟。於a)步驟中,為形成焊料電極,須將封裝體加熱至焊料之迴焊(reflow)溫度。於b)步驟中,須以例如100℃以上、150℃以下之條件進行數小時的處理。又,於c)步驟中係進行與a)步驟同樣的處理。通常,於區域表面安裝型半導體封裝體,於剛密封成形後,由於密封材硬化物與基板之線膨脹係數的差、密封材之硬化收縮等,經密封成形之面(以下,亦稱為密封面)係朝上翹曲成凹形(常溫時)。藉由其後之a)、b)步驟,該封裝體之密封面朝上凹曲的方向會變化為較緩和(常溫時)。其係因密封材硬化物與基板的線膨脹係數之差、或密封材之應力緩和等之效果所致。再者,於c)步驟中,若使該封裝體曝露於焊料迴焊溫度(焊料熔點溫度),則該封裝體會朝凸方向大幅翹曲。一旦發生此種翹曲,於表面安裝步驟之焊料迴焊時,將有封裝體中央浮起、或發生外周部的焊料之架橋(bridging)的情形。因此,於焊球之對於母板的安裝時,將有發生連接不良的情形,或即使在經連接之情況下,於焊料接合部將局部地殘留較強應力,而於其後之溫度循環試驗等中會有造成連接不良之顧慮。此等不良情形,係於基板厚度較薄之情況、焊球徑較小之情況等之下尤其有發生之顧慮。
為解決此等不良情形,而針對密封樹脂之改良進行了各種檢討。例如有1)提高硬化物之玻璃轉移溫度(以下,亦稱為「Tg」);2)控制線膨脹係數等。作為具體例,曾提出有藉由組合三苯酚甲烷型環氧樹脂與三苯酚甲烷型酚樹脂,以提高樹脂硬化物之Tg,使樹脂組成物於成形時之硬化收縮減小的手法(例如參照專利文獻1)。又,提案有藉由使用熔融黏度低之樹脂而提高無機填充劑之調配量,以使樹脂硬化物的Tg以下之線膨脹係數α 1與基板相配合之手法(例如參照專利文獻2)。再者,提案有藉由使用具有萘環骨架之樹脂,以降低線膨脹係數的方法(例如參照專利文獻3、4、5、6)。
此等對策雖可得到某程度之效果,然而對薄型基板、焊球徑較小的封裝體等卻尚未臻於理想,於流動性等之成形性方面亦尚有待改良。
[專利文獻1]日本特開平11-147940號公報[專利文獻2]日本特開平11-1541號公報[專利文獻3]日本特開平8-127636號公報[專利文獻4]日本特開2001-233936號公報[專利文獻5]日本特開平4-217675號公報[專利文獻6]日本特開平6-239970號公報
本發明提供一種半導體密封用環氧樹脂組成物及使用其之半導體裝置,該環氧樹脂組成物係流動性、低應力性優異,尤其於區域表面安裝型半導體裝置之製造時,自密封成形至表面安裝之各步驟後於常溫下之翹曲變動量、與表面安裝時於高溫下之翹曲量皆較小。
依據本發明之一實施形態,可提供:一種半導體密封用環氧樹脂組成物,其特徵為,含有環氧樹脂(A),該環氧樹脂(A)含有:熔點為50℃以上、150℃以下之結晶性環氧樹脂(a1);以下述通式(1)表示之環氧樹脂(a2);與選自以下述通式(2)表示之環氧樹脂及以下述通式(3)表示之環氧樹脂之至少1種環氧樹脂(a3)(其中,該(a1)成分係與該(a2)成分、該(a3)成分不同);樹脂組成物之依據EMMI-1-66法之螺旋流動長度(spiral flow)為80cm以上;樹脂組成物之硬化物的玻璃轉移溫度為150℃以上;於樹脂組成物之硬化物的玻璃轉移溫度以下的線膨脹係數為5ppm/℃以上、10ppm/℃以下;
(於上述通式(1)中,R1為碳數1~4之烴基,可互為相同,亦可互為不同;R2為氫或碳數1~4之烴基,可互為相同,亦可互為不同;n為0~6之整數;)
(於上述通式(2)中,R1為碳數1~4之烴基,可互為相同,亦可互為不同;R2為氫或碳數1~4之烴基,可互為相同,亦可互為不同;m為0~5之整數;n為0~6之整數;)
(於上述通式(3)中,R1為碳數1~4之烴基,可互為相同,亦可互為不同;R2為氫或碳數1~4之烴基,可互為相同,亦可互為不同;m為0~5之整數)。
依據一實施形態,該結晶性環氧樹脂(a1)為選自聯苯型環氧樹脂、雙酚型環氧樹脂、二苯乙烯(stilben)型環氧樹脂、二羥基苯型環氧樹脂、及萘型環氧樹脂中之至少1種結晶性環氧樹脂。
依據一實施形態,以相對於該(a1)成分、(a2)成分、(a3)成分之合計量的調配比例計,該(a1)成分為60重量%以上、95重量%以下。
依據一實施形態,以相對於該(a1)成分、(a2)成分、(a3)成分之合計量的調配比例計,該(a1)成分為60重量%以上、95重量%以下,(a2)成分為2.5重量%以上、20重量%以下,(a3)成分為2.5重量%以上、20重量%以下。
依據一實施形態,該環氧樹脂組成物含有酚樹脂系硬化劑(B)。
依據一實施形態,該環氧樹脂組成物含有無機填充劑(C)。
依據一實施形態,該環氧樹脂組成物含有硬化促進劑(D)。
依據一實施形態,該環氧樹脂組成物之依據EMMI-1-66法之螺旋流動為120cm以上。
依據本發明之另一實施形態,可提供一種半導體裝置,其係使用上述半導體密封用環氧樹脂組成物將半導體元件密封而成。
依據本發明之另一實施形態,可提供一種半導體密封用環氧樹脂組成物,其係使用於區域表面安裝型半導體裝置之密封者;該區域表面安裝型半導體裝置係在基板之單面搭載半導體元件,對該半導體元件所搭載之基板面側之實質性單面使用半導體密封用環氧樹脂組成物進行密封而成。
依據本發明之另一實施形態,可提供一種區域表面安裝型半導體裝置,其特徵在於,在基板之單面搭載半導體元件,對該半導體元件所搭載之基板面側之實質性單面使用上述半導體密封用環氧樹脂組成物進行密封而成。
本發明係得到一種半導體密封用之環氧樹脂組成物,其含有環氧樹脂(A),該環氧樹脂(A)含有熔點為50℃以上、150℃以下之結晶性環氧樹脂(a1),以下述通式(2)表示之環氧樹脂(a2)及,與選自及以下述通式(2)表示之環氧樹脂及以下述通式(3)表示之環氧樹脂中之至少1種環氧樹脂(a3)(其中,該(a1)成分與該(a2)成分、該(a3)成分不同);樹脂組成物之依據EMMI-1-66法之螺旋流動為80cm以上,樹脂組成物之硬化物的玻璃轉移溫度為150℃以上,於樹脂組成物之硬化物的玻璃轉移溫度以下的線膨脹係數為5ppm/℃以上、10ppm/℃以下;藉此,可得到流動性、低應力性優異,尤其於各處理步驟中之翹曲變動較少之區域表面安裝型半導體封裝體。
以下,就各成分詳細地加以說明。
本發明中,作為環氧樹脂(A),較佳為含有含熔點為50℃以上、150℃以下之結晶性環氧樹脂(a1),以下述通式(1)表示之環氧樹脂(a2),與選自以下述通式(2)表示之環氧樹脂及以下述通式(3)表示之環氧樹脂之至少1種環氧樹脂(a3)的環氧樹脂(A)(其中,該(a1)成分與該(a2)成分、該(a3)成分不同)。關於(a1)成分、(a2)成分、(a3)成分之調配比例並無特別限定,較佳係相對於(a1)成分、(a2)成分、(a3)成分之合計量,(a1)成分為60重量%以上、95重量%以下,(a2)成分為2.5重量%以上、20重量%以下,(a3)成分為2.5重量%以上、20重量%以下。各成分之調配比例若於上述範圍,則可得到流動性、低應力性優異,尤其於區域表面安裝型半導體裝置之製造時,自密封成形至表面安裝之各步驟後於常溫下之翹曲變動量、與表面安裝時於高溫下之翹曲量皆較小的樹脂組成物。
有關並用前述(a1)成分與(a3)成分之要點,雖已揭示於日本特開平6-239970號公報中,惟此情況下,由於無前述(a2)成分,故若為了確保充分的流動性而增加(a1)成分之調配比例,則樹脂硬化物的Tg降低,無法得到良好的低應力性,尤其無法得到良好的翹曲變動減低效果。反之,若為了得到充分的低應力性,尤其是充分的翹曲變動減低效果而增加(a3)成分之調配比例,則密封成形時之流動性會降低,導致未填充或金線流動等之不良情形。
又,有關並用前述(a2)成分與(a3)成分之要點,雖已揭示於日本特開平4-217675號公報中,惟此情況下,由於無前述(a1)成分,故流動性降低,尤其對於所密封之空隙狹窄之情況較多之區域表面安裝型半導體封裝體而言將無法得到充分的流動性。又,除了前述(a2)成分與(a3)成分之外,前述(a1)成分之中,相較於並用了具有降低熱時彈性係數之效果之聯苯型環氧樹脂、雙酚型環氧樹脂、二苯乙烯型環氧樹脂、二羥基苯型環氧樹脂的情況,於只有前述(a2)成分與(a3)成分時,熱時彈性係數變得非常高,表面安裝時之高溫下的翹曲量會變大。因此,於將此等半導體裝置焊接至所要安裝之電路基板上時,會產生半導體之翹曲,多數的焊球不平坦而自半導體裝置所安裝之線路基板浮起,導致發生電性接合之可靠性降低的問題。
本發明中所使用之熔點為50℃以上、150℃以下之結晶性環氧樹脂(a1),係顯示可提高密封樹脂流動性之作用。有關(a1)成分之調配比例,係相對於(a1)成分、(a2)成分、(a3)成分之合計量,以60重量%以上、95重量%以下為佳。(a1)成分之調配比例若於上述範圍內,則可得到充分的流動性,尤其對於密封之空隙狹窄的情況居多之區域表面安裝型半導體封裝體而言,亦可確保充分的流動性。
本發明中所使用之環氧樹脂(a1),係不含(a2)成分與(a3)成分的熔點為50℃以上、150℃以下之結晶性環氧樹脂。所謂「結晶性環氧樹脂」,係於室溫(25℃)下具有結晶性狀之環氧樹脂,其最大特徵為在室溫下為固形樹脂,而熔融時成為與液狀樹脂相當之低黏度。其黏度並無特別限定,可舉例如以ICI熔融黏度計所測定之於150℃下之熔融黏度計,為0.01泊(poise)以上、0.50泊以下的範圍者等。作為熔點為50℃以上、150℃以下之結晶性環氧樹脂的例子可舉出聯苯型環氧樹脂、雙酚型環氧樹脂、二苯乙烯型環氧樹脂、二羥基苯型環氧樹脂、及萘型環氧樹脂等。此等之中,就流動性之觀點而言,以聯苯型環氧樹脂、雙酚型環氧樹脂為佳。
作為聯苯型環氧樹脂,可舉例如4,4’-二羥基聯苯、4,4’-二羥基-3,3’,5,5’-四甲基聯苯、4,4’-二羥基-3,3’-二(第三丁基)-6,6’-二甲基聯苯、2,2’-二羥基-3,3’-二(第三丁基)-6,6’-二甲基聯苯、4,4’-二羥基-3,3’-二(第三丁基)-5,5’-二甲基聯苯、4,4’-二羥基-3,3’,5,5’-四(第三丁基)聯苯等(含取代基位置不同之異構物)之環氧丙基醚化物。尤其,就流動性(低黏度)之觀點而言,以4,4’-雙(2,3-環氧基丙氧基)-3,3’,5,5’-四(第三丁基)聯苯為佳。
作為雙酚型環氧樹脂,可舉例如:4,4’-亞甲基雙(2-甲基苯酚)、4,4’-亞甲基雙(2,6-二甲基苯酚)、4,4’-亞甲基雙(2,3,6-三甲基苯酚)、4,4’-亞乙基雙(2,6-二甲基苯酚)、4,4’-(1-甲基亞乙基)雙(2-甲基苯酚)、4,4’-(1-甲基亞乙基)雙(2,6-二甲基苯酚)、4,4’-(1-甲基亞乙基)雙[2-(1-甲基乙基)苯酚]、4,4’-雙(2,3-羥基丙氧基)-2,2’-二甲基-5,5’-二(第三丁基)二硫化二苯、4,4’-二羥基二苯基碸、雙[4-(羥基乙氧基)苯基]碸等之環氧丙基醚化物。尤其就流動性(低黏度)之觀點而言,以2,2’-雙[4-(2,3-環氧基丙氧基苯基)]丙烷、雙[4-(2,3-環氧基丙氧基苯基)]甲烷為佳。
作為二苯乙烯型環氧樹脂,可舉例如:3-(第三丁基-2,4’-二羥基-3’,5’,6-三甲基二苯乙烯、3-第三丁基-4,4’-二羥基-3’,5’,6-三甲基二苯乙烯、3-第三丁基-4,4’-二羥基-3’,5,5’-三甲基二苯乙烯、4,4’-二羥基-3,3’,5,5’-四甲基二苯乙烯、4,4’-二羥基-3,3’-二(第三丁基)-6,6’-二甲基二苯乙烯、2,2’-二羥基-3,3’-二(第三丁基)-6,6’-二甲基二苯乙烯、2,4’-二羥基-3,3’-二(第三丁基)-6,6’-二甲基二苯乙烯、2,2’-二羥基-3,3’,5,5’-四甲基二苯乙烯、4,4’-二羥基-3,3’-二(第三丁基)-5,5’-二甲基二苯乙烯等(含取代位置不同之異構物)之環氧丙基醚化物。
作為二羥基苯型環氧樹脂,可舉例如:2,5-二正丁基)氫醌、2,5-二(第三丁基)氫醌、2,5-二戊基氫酉昆、2,5-二己基氫酉昆、2,5-二庚基氫醌、2,5-二辛基氫醌、2,5-二壬基氫醌、2,5-二癸基氫醌等之環氧丙基醚化物。
作為萘型環氧樹脂,可舉例如:1,6-二羥基萘等之環氧丙基醚化物。
此等化合物,可單獨使用1種,亦可並用2種以上。
本發明中,以下述通式(1)表示之環氧樹脂(a2),係用以兼顧密封樹脂之流動性與低應力性、尤其是區域表面安裝型半導體封裝體之翹曲特性所不可或缺之成分。有關(a2)成分之調配比例,係相對於(a1)成分、(a2)成分、(a3)成分之合計量,以2.5重量%以上、20重量%以下為佳。(a2)成分之調配比例若於上述範圍內,則密封樹脂之流動性與低應力性、尤其是區域表面安裝型半導體封裝體之翹曲特性將可達成較佳的平衡。以下述通式(1)表示之環氧樹脂(a2),由於為結晶性高的樹脂,故(a2)成分之調配比例若超出上述範圍,則半導體密封用環氧樹脂組成物之製造時之溶解性會降低,故難以製得均一的樹脂組成物。
本發明中,選自以下述通式(2)表示之環氧樹脂及以下述通式(3)表示之環氧樹脂之至少1種環氧樹脂(a3),係顯示低應力性之作用,尤其是減低區域表面安裝型半導體封裝體之翹曲特性的作用。有關(a3)成分之調配比例,係相對於(a1)成分、(a2)成分、(a3)成分之合計量,以2.5重量%以上、20重量%以下為佳。(a3)成分之調配比例若於上述範圍內,則可得到低應力性優異之環氧樹脂組成物。又,(a3)成分之調配比例若於上述範圍內,樹脂硬化物之玻璃轉移溫度會變高,可得到於區域表面安裝型半導體之製造時,自密封成形至表面安裝之各步驟後於常溫下之翹曲變動量、與表面安裝時於高溫下之翹曲量皆較小之樹脂組成物。
又,以前述通式(1)表示之環氧樹脂、以前述通式(2)表示之環氧樹脂及以前述通式(3)表示之環氧樹脂,例如可使β-萘酚、2,7-二羥基萘、甲醛,在鹼性觸媒或酸性觸媒存在下,於30~100℃反應0.5~30小時後,進行環氧丙基醚化而得到。藉由改變β-萘酚與2,7-二羥基萘之莫耳比,可調整以前述通式(1)表示之環氧樹脂、以前述通式(2)表示之環氧樹脂及以前述通式(3)表示之環氧樹脂的比例。
本發明中,於無損於並用前述(a1)成分、(a2)成分、(a3)成分之效果的範圍內,亦可並用其他環氧樹脂。作為可並用之環氧樹脂,可舉例如:酚醛清漆型環氧樹脂、具有伸苯基骨架之苯酚芳烷基型環氧樹脂、具有聯伸苯基骨架之苯酚芳烷基型環氧樹脂、萘酚型環氧樹脂、蒽型環氧樹脂、烷基改質三苯酚甲烷型環氧樹脂、含有三核之環氧樹脂、二環戊二烯改質苯酚型環氧樹脂等,惟並非限定與此等。於並用此等環氧樹脂之情況下,較佳係相對於全環氧樹脂量,為30質量%以下。若在此以上,組成物於密封時之黏度會上昇而妨礙流動性,故不佳。
若考量到作為半導體密封用環氧樹脂組成物之耐濕可靠性,則環氧樹脂中所含有之離子性雜質之Na離子與Cl離子以極少為佳,就硬化性之觀點而言,作為環氧樹脂之環氧當量以100~500g/eq為佳。
作為本發明中可使用之酚醛樹脂系硬化劑(B),可使用通常使用於密封材料者。其例子可舉出:苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、二環戊二烯改質苯酚樹脂、萜烯改質苯酚樹脂、具有伸苯基骨架之苯酚芳烷基樹脂、具有聯伸苯基骨架之苯酚芳烷基樹脂、含硫原子之苯酚樹脂、萘酚酚醛清漆樹脂、具有伸苯基骨架之萘酚芳烷基樹脂、具有聯伸苯基骨架之萘酚芳烷基樹脂等,此等可單獨使用1種,亦可並用2種以上。
本發明中所使用之全環氧樹脂與全苯酚樹脂系硬化劑之調配比例,較佳者係全環氧樹脂之環氧基數(EP)與全苯酚樹脂系硬化劑之苯酚性羥基數(OH)的比(EP/OH)為0.6以上、1.5以下,以0.8以上、1.3以下為更佳。上述當量比若於上述範圍內,環氧樹脂組成物之發生硬化性降低的可能性小。又,上述當量比若於上述範圍內,於環氧樹脂組成物之硬化物中,發生玻璃轉移溫度降低與耐濕可靠性降低等之可能性較少。
作為本發明中可使用之無機填充劑(C),可使用通常用於密封材料之熔融二氧化矽、球狀二氧化矽、結晶二氧化矽、氧化鋁、氮化矽、氮化鋁等。作為無機填充劑(C)之粒子徑,就對模具之填充性而言,以0.01 μm以上、150 μm以下為佳。又,無機填充劑(C)之含有量係以環氧樹脂組成物全體之80重量%以上、92重量%以下為佳,以84重量%以上、90重量%以下為更佳。無機填充劑(C)之調配量若於上述範圍內,則環氧樹脂組成物之硬化物之翹曲較小,並使吸水量減少。又,無機填充劑(C)之調配量若於上述範圍內,可不致降低強度而得到良好的耐焊性。又,無機填充劑(C)之調配量若於上述範圍內,則可於無損於流動性之下得到良好的成形性。
作為本發明中可使用之硬化促進劑(D),只要為可促進環氧樹脂之環氧基與苯酚樹脂系硬化劑之苯酚性羥基之硬化反應者即可,可使用通常使用於密封材料者。例如可使用:三丁胺、1,8-二氮雜二環(5,4,0)十一碳烯-7等之胺系化合物、三苯基膦、四苯基膦鎓.四苯基硼酸酯鹽等之有機磷系化合物、2-甲基咪唑等之咪唑化合物、鎓(onium)鹽等。
本發明之半導體密封用環氧樹脂組成物,係除了前述成分之外,亦可適當地調配溴化環氧樹脂、或三氧化銻、氫氧化鋁、氫氧化鎂、硼酸鋅、鉬酸鋅、磷肌酸(phosphagen)等之難燃劑;巴西棕櫚蠟等之天然蠟、聚乙烯蠟等之合成蠟;硬脂酸、硬脂酸鋅等之高級脂肪酸及其金屬鹽類;或石蠟等之脫模劑;環氧矽烷、硫醇矽烷、胺基矽烷、烷基矽烷、脲矽烷、乙烯基矽烷等之矽烷偶合劑;鈦酸酯偶合劑、鋁偶合劑、鋁/鋯偶合劑等之偶合劑;碳黑、氧化鐵紅等之著色劑;丁二烯橡膠、丙烯腈改質丁二烯橡膠、矽酮油、聚矽氧橡膠等之低應力化成分;用以減低離子性雜質之無機離子交換體等各種添加劑。
本發明之半導體密封用環氧樹脂組成物,可使用將(A)~(D)成分及其他添加劑等,以混合機等於常溫下均一混合,其後再以加熱輥、捏合機或擠出機等進行熔融混練,予以冷卻後加以粉碎者等,或視需要而適當地調整分散度與流動性等者。
本發明之半導體密封用環氧樹脂組成物之依據EMMI-1-66法之螺旋流動係以80cm以上為佳。螺旋流動若於此範圍內,則於通常之半導體封裝體之密封成形中,可抑制未填充與所謂金線流動之不良情形的發生。再者,本發明之半導體密封用環氧樹脂組成物之依據EMMI-1-66法之螺旋流動係以120cm以上為更佳。螺旋流動若於此範圍內,於所密封之空隙狹窄之情況較多之區域表面安裝型半導體封裝體的密封成形時,亦可抑制未填充與所謂金線流動之不良情形的發生。又,本發明之半導體密封用環氧樹脂組成物中,必須其硬化物之玻璃轉移溫度為150℃以上,硬化物之於玻璃轉移溫度以下之線膨脹係數為5ppm/℃以上、10ppm/℃以下。若並用前述(a1)、(a2)、(a3)之3種環氧樹脂,且將硬化物之玻璃轉移溫度調整為150℃以上,將硬化物於玻璃轉移溫度以下之線膨脹係數調整為5ppm/℃以上、10ppm/℃以下,則可得到良好的低應力性,尤其可同時減小於區域表面安裝型半導體裝置之製造時自密封成形至表面安裝之各步驟後於常溫下之翹曲變動量、與表面安裝時於高溫下之翹曲量。
作為使樹脂組成物之依據EMMI-1-66法之螺旋流動成為80cm以上,且使樹脂組成物之硬化物之玻璃轉移溫度成為150℃以上,硬化物之於玻璃轉移溫度以下之線膨脹係數成為5ppm/℃以上、10ppm/℃以下的方法,可舉出調整必要成分之前述(a1)成分、(a2)成分、(a3)成分之調配比例及無機填充劑(C)之調配比例等的方法。
於使用本發明之半導體密封用環氧樹脂組成物,密封半導體元件以製造半導體裝置時,例如可將搭載了上述半導體元件之導線框架、電路基板等設置於鑄模內之後,將上述半導體密封用環氧樹脂組成物以轉移成形法(transfer mold)、壓縮成形法(compression mold)、射出成形法(injection mold)等成形方法進行成形硬化即可。
本發明中作為進行密封之半導體元件並無特別限定,可舉出例如積體電路、大型積體電路、電晶體、閘流體、二極體、固體攝影元件等。
作為本發明之半導體裝置之形態並無特別限定,可舉出例如:雙排式封裝體(DIP:Dual In-Line Package)、塑封引線之晶片載體(PLCC:Plastic Lead Chip Carrier)、四方扁平封裝體(QFP:Quad Flat Package)、小外型封裝體(SOP:Small Outline Package)、小外型J型引線封裝體(SOJ:Small Outline J-lead Package)、薄型小外型封裝體(TSOP:Thin Small Outline Package)、薄型四方扁平封裝體(TQFP:Thin Quad Flat Package)、帶式載體封裝體(TCP:Tape Carrier Package)、球栅陣列封裝體(BGA:Ball Grid Array)、晶片尺寸封裝體(CSP:Chip Scale Package)等。
上述以轉移成形法等之成形方法所密封之半導體裝置,可直接搭載、或於80℃至200℃程度的溫度下以10分鐘至10小時左右的時間使其完全硬化後,搭載於電子器材上。
圖1為使用本發明之環氧樹脂組成物之半導體裝置之一例的截面構造圖。於晶粒座(die pad)3上經由黏晶材硬化體2固定著半導體元件1。於半導體元件1之電極墊與導線框架5之間藉由金線4而予以連接。半導體元件1係藉由密封用樹脂組成物之硬化物6而密封。
圖2為使用本發明之環氧樹脂組成物之單面密封型半導體裝置之一例的截面構造圖。於基板8上經由黏晶材硬化體2固定著半導體元件1。於半導體元件1之電極墊與基板8上之電極墊7之間藉由金線4而予以連接。藉由密封用樹脂組成物之硬化體6,僅將基板8之搭載半導體元件1所搭載的一面側密封。基板8之電極墊7係與基板8上之非密封面側之焊球9於內部相接合。
圖3為表示實施例及比較例中之環氧樹脂(A)中,(a1)成分、(a2)成分、(a3)成分的調配比例之3成分表。於圖3中,除了顯示各實施例及比較例中之環氧樹脂(A)中之(a1)成分、(a2)成分、(a3)成分的調配比例之圖(實施例1~9,及比較例1~7)之外,亦以菱形的粗線顯示前述(a1)成分、(a2)成分、(a3)成分的調配比例之較佳範圍X。該菱形之粗線的內側範圍X為前述之較佳範圍,亦即,其滿足相對於(a1)~(a3)成分之合計量,為60重量%以上、95質量%以下的(a1)成分,2.5重量%以上、20重量%以下之(a2)成分,及2.5重量%以上、20重量%以下之(a2)成分的範圍。
以下,就本發明以實施例具體地加以說明,惟本發明並不因此等實施例而受到限定。調配比例係重量份。
.環氧樹脂1:以下述式(4)表示之4,4’-雙(2,3-環氧基丙氧基)-3,3’,5,5’-四甲基聯苯為主成分之聯苯型結晶性環氧樹脂(日本環氧樹脂製,YX-4000H;環氧當量186,熔點105℃,以ICI熔融黏度計測定之於150℃的熔融黏度為0.15泊) 6.11重量份
.環氧樹脂3:以通式(1)表示之環氧樹脂(於通式(1)中n為0,R2為氫原子)50重量%、以通式(2)表示之環氧樹脂(於通式(2)中,m、n為0,R2為氫原子)40重量%、以通式(3)表示之環氧樹脂(於通式(3)中,m為0,R2為氫原子)10重量%的混合物(大日本油墨化學工業公司製,HP-4770;環氧當量204,軟化點72℃)1.10重量份.苯酚樹脂系硬化劑1:苯酚酚醛清漆樹脂(住友BAKELITE公司製,PR-HF-3;羥基當量101,軟化點80℃)3.96重量份.無機填充劑:熔融球狀二氧化矽(平均粒徑30 μm)88.00重量份.硬化促進劑:三苯膦 0.20重量份.脫模劑:褐煤酸三甘油酯(滴點80℃) 0.20重量份.偶合劑1:γ-環氧丙氧基丙基三甲氧基矽烷0.10重量份.偶合劑2:γ-硫醇丙基三甲氧基矽烷0.10重量份.著色劑:碳黑 0.20重量份
將上述者以混合機於常溫混合,再用80~100℃之加熱輥進行熔融混練,冷卻後進行粉碎,得到環氧樹脂組成物。評估結果示於表1。
.螺旋流動:用低壓轉移成形機(柯塔奇精機(股)製,KTS-15),將環氧樹脂組成物於鑄模溫度175℃、注入壓力6.9MPa、保壓時間120秒之條件下注入至依據EMMI-1-66之螺旋流動測定用鑄模中,測定流動長度。螺旋流動為流動性之參數,數值愈大表示較佳的流動性。單位為cm。作為通常之半導體封裝體用之密封材以80cm以上為佳。作為區域表面安裝型半導體封裝體用之密封材則以120cm以上為佳。
.玻璃轉移溫度:用低壓傳送成形機(柯塔奇精機(股)製,KTS-30),於鑄模溫度175℃、注入壓力9.8MPa、硬化時間2分鐘之條件下注入環氧樹脂組成物並成形,得到4mm×4mm×15mm之試驗片。使得到之試驗片於175℃進行4小時後硬化後,藉由用熱機械分析裝置(精工電子工業(股)製,TMA100)於測定溫度範圍由0℃至320℃之溫度區域間,以昇溫速度5℃/分鐘進行測定時之線圖來決定在玻璃轉移溫度以下的區域之線膨脹係數(α 1)與相當於橡膠狀區域之線膨脹係數(α 2),以其等之延長線的交點作為玻璃轉移溫度。單位為℃。
.線膨脹係數(α 1):用低壓傳送成形機(柯塔奇精機(股)製,KTS-30),於鑄模溫度175℃、注入壓力9.8MPa、硬化時間2分鐘之條件下注入環氧樹脂組成物並成形,得到4mm×4mm×15mm之試驗片。使得到之試驗片於175℃進行4小時後硬化後,藉由用熱機械分析裝置(精工電子(股)製,TMA-100,昇溫速度5℃/分),測定在玻璃轉移溫度以下的區域之線膨脹係數(α 1)。單位為ppm/℃。線膨脹係數(α 1)若超過10ppm,由於與基板之線膨脹係數差變大,會導致封裝體之翹曲量、翹曲變動量增大。
.金線流動率(BGA):用低壓傳送成形機(TOWA製,Y系列),於模具溫度175℃、注入壓力6.9MPa、硬化時間2分鐘之條件下,以環氧樹脂組成物對矽晶片等進行密封成形,得到352引腳BGA(基板厚度為0.56mm,為雙順丁烯二醯亞胺-三樹脂/玻璃布基板,封裝體尺寸為30×30mm,厚度為1.17mm,矽晶片之尺寸為10mm×10mm,厚度為0.35mm,晶片與電路基板的焊墊(bonding pad)係以25 μm徑的金線接合)。對所得到之352引腳BGA封裝體以軟X射線透視裝置(索夫特克斯(股)製,PRO-TEST100)進行觀察,以金線之流動率(流動量)/(金線長)的比例予以表示,評估基準係未滿5%為合格,5%以上為不合格。
.金線流動率(LQFP):用低壓傳送自動成形機(第一精工製,GP-ELF),於鑄模溫度175℃、注入壓力9.8MPa、硬化時間70秒之條件下,用環氧樹脂組成物對矽晶片等進行密封成形,得到160引腳LQFP(Low profile Quad Flat Package;Cu製導線框架,封裝體外部尺寸:24mm×24mm×1.4mm厚,墊尺寸:8.5mm×8.5mm,晶片尺寸:7.4mm×7.4mm×350mm厚)。對得到之160引腳LQFP封裝體以軟X射線透視裝置(索夫特克斯(股)製,PRO-TEST100)進行觀察,以金線之流動率(流動量)/(金線長)的比例予以表示,評估基準係未滿5%為合格,5%以上為不合格。
.封裝體之翹曲特性:用低壓傳送成形機(TOWA製,Y系列),於鑄模溫度175℃、注入壓力6.9MPa、硬化時間2分鐘之條件下,以環氧樹脂組成物對矽晶片等進行密封成形,得到352引腳BGA(基板厚度為0.56mm,為雙順丁烯二醯亞胺-三樹脂/玻璃布基板,封裝體尺寸為30×30mm,厚度為1.17mm,矽晶片之尺寸為10×10mm,厚度為0.35mm,晶片與電路基板的焊墊係以25 μm徑的金線接合)。對得到之封裝體進行下述處理後測定翹曲量。翹曲量之測定方法係以經密封成形之面朝上,用表面粗度計自封裝體的閘極(gate)測定對角線方向的高度方向移位,以移位差之最大值作為翹曲量。又,朝上凸起之翹曲移位的情況係以負值表示數值,凹下之翹曲的情況則以正值表示數值(+符號省略)。單位為μm。
.成形後翹曲量:為剛成形後之於25℃的翹曲量。
.熱經歷後翹曲量:成形後,進行後硬化(175℃、4小時)然後進行IR迴焊(reflow)處理(於260℃,依據JEDEC條件),再進行125℃、8小時的乾燥步驟後之於25℃之翹曲量。
.熱經歷翹曲變動量:以成形後之翹曲量作為W1,以熱經歷後翹曲量作為W2時之差(W1-W2)。
.熱時翹曲量:於測定熱經歷後翹曲量後,再使封裝體於260℃熱板上加熱,於溫度趨於恆定時所測定之翹曲量。
.於剛成形後(亦含後硬化後)之翹曲值若為80 μm以上,則以裝置進行搬送時會有困難。又,於熱經歷翹曲變動量為40 μm以上之情況,自成形後至安裝步驟中,可能會無法以裝置搬送封裝體。有關熱時翹曲量,若超過-90 μm,則於安裝母板時可能會發生連接不良的問題。
依表1、表2之配方,與實施例1同樣地製造環氧樹脂組成物,進行與實施例1同樣的評估。評估結果示於表1、表2。
實施例1以外所用之成分係表示如下述:.環氧樹脂2:雙酚A型結晶性環氧樹脂(日本環氧樹脂(股)製,YL-6810;環氧當量175,軟化點45℃,以ICI熔融黏度計測定之於150℃之熔融黏度為0.10泊(poise))。
.環氧樹脂4:以β-萘酚、2,7-二羥基萘、甲醛作為原料藉由前述製法所製作,以通式(1)表示之環氧樹脂(於通式(1)中n為0,R2為氫原子)6.5重量%,以通式(2)表示之環氧樹脂(於通式(2)中,m、n為0,R2為氫原子)25重量%,以通式(3)表示之環氧樹脂(於通式(3)中,m為0,R2為氫原子)10重量%的混合物(環氧當量212,軟化點68℃)。
.環氧樹脂5:以β-萘酚、2,7-二羥基萘、甲醛作為原料藉由前述製法所製作,以通式(1)表示之環氧樹脂(於通式(1)中n為0,R2為氫原子)8.5重量%,以通式(2)表示之環氧樹脂(於通式(2)中,m、n為0,R2為氫原子)10重量%,以通式(3)表示之環氧樹脂(於通式(3)中,m為0,R2為氫原子)5重量%的混合物(環氧當量227,軟化點67℃)。
.環氧樹脂6:以β-萘酚、2,7-二羥基萘、甲醛作為原料藉由前述製法所製作,以通式(2)表示之環氧樹脂(於通式(2)中,m、n為0,R2為氫原子)60重量%,以2,7二羥基萘、甲醛作為原料藉由前述製法所製作,以通式(3)表示之環氧樹脂(於通式(3)中,m為0,R2為氫原子)40重量%的混合物(環氧當量177,軟化點85℃)。
.苯酚樹脂系硬化劑2:具有聯亞苯基骨架之苯酚芳烷基樹脂(明和化成(股)製,MEH-7851SS,羥基當量203,軟化點66℃)。
實施例1~9為含有將(a1)成分之種類與調配比例、(a2)成分之調配比例、(a3)成分之調配比例及苯酚樹脂系硬化劑之種類改變者,作為環氧樹脂,係含有(a1)成分、(a2)成分、(a3)成分之3成分作為必要成分,且藉由使(a1)成分、(a2)成分、(a3)成分之調配比例成為適當的範圍,使樹脂組成物之以EMMI-1-66法測定之螺旋流動為80cm以上,使樹脂組成物硬化物之玻璃轉移溫度為150℃以上,使樹脂組成物硬化物之玻璃轉移溫度以下之線膨脹係數為5ppm/℃以上、10ppm/℃以下的範圍,任一者於金線流動率與封裝體翹曲特性之平衡方面皆得到優異的結果。再者,藉由使(a1)成分、(a2)成分、(a3)成分之調配比例成為適當的範圍等,樹脂組成物之以EMMI-1-66法測定之螺旋流動成為120cm以上之實施例1、2、4、5中,於BGA中之金線流動率亦得到良好的結果。
另一方面,於比較例1中,作為環氧樹脂雖含有(a1)成分、(a2)成分、(a3)成分,惟(a3)之調配比例較少,硬化物之玻璃轉移溫度低於150℃,而於LQFP中之金線流動率雖可得到良好的結果,惟封裝體翹曲特性,尤其是成形後翹曲量、熱經歷翹曲變動量較差。
又,比較例2~5中,作為環氧樹脂未含有(a2)成分,且係緩緩地改變(a1)成分與(a3)成分的比例,其中,為了使螺旋流動低於80cm而多量調配(a3)之比較例2中,於封裝體翹曲特性雖可得到良好的結果,惟金線流動率率變差。另一方面,在為了使玻璃轉移溫度低於150℃、並使線膨脹係數超過10ppm/℃,而使(a3)成分成為0之比較例5中,金線流動率雖可得到良好的結果,惟封裝體翹曲特性變差,尤其是成形後翹曲量、熱經歷翹曲變動量、熱時翹曲量變差。又,介於比較例2與比較例5之中間配方的比較例3及比較例4,亦無法得到金線流動率與封裝體翹曲特性皆優異之結果。
再者,比較例6中,作為環氧樹脂雖含有(a1)成分、(a2)成分、(a3)成分,惟由於(a1)成分之調配比例少,故螺旋流動低於80cm,此比較例中,於封裝體翹曲特性雖可得到良好的結果,惟金線流動率差。
又,比較例7中,作為環氧樹脂雖含有(a2)成分、(a3)成分,而未含有(a1)成分,故螺旋流動遠低於80cm,此比較例中,金線流動率顯著地變差。又,由於樹脂硬化物之熱時彈性係數提高,故導致熱時翹曲量亦變差。
由上述可知:依據本發明之半導體密封用環氧樹脂組成物,係於金線流動率與封裝體翹曲特性之平衡上為優異者。
依據本發明,可得到流動性、低應力性皆優異,尤其可得到於區域表面安裝型半導體封裝體之製造時翹曲特性、特別是經過熱經歷時之翹曲特性優異之環氧樹脂組成物,因此,尤其適合作為區域表面安裝型半導體裝置用。
1...半導體元件
2...黏晶材硬化體
3...晶粒座(die pad)
4...金線
5...導線框架
6...密封用樹脂組成物之硬化物
7...電極墊
8...基板
9...焊球
圖1為使用了本發明之環氧樹脂組成物之半導體裝置之一例的截面構造圖。
圖2為使用了本發明之環氧樹脂組成物之單面密封型半導體裝置之一例的截面構造圖。
圖3為表示實施例及比較例中之環氧樹脂(A)中,(a1)成分、(a2)成分、(a3)成分之調配比例的3成分表。
Claims (10)
- 一種半導體密封用環氧樹脂組成物,其特徵為,含有環氧樹脂(A),該環氧樹脂(A)含有:熔點為50℃以上、150℃以下之結晶性環氧樹脂(a1);以下述通式(1)表示之環氧樹脂(a2);與選自以下述通式(2)表示之環氧樹脂及以下述通式(3)表示之環氧樹脂之至少1種環氧樹脂(a3)(其中,該(a1)成分係與該(a2)成分、該(a3)成分不同);以相對於該(a1)成分、(a2)成分、(a3)成分之合計量的調配比例計,該(a1)成分為60重量%以上、95重量%以下;樹脂組成物之依據EMMI-1-66法之螺旋流動(spiral flow)為80cm以上;樹脂組成物之硬化物的玻璃轉移溫度為150℃以上;於樹脂組成物之硬化物的玻璃轉移溫度以下的線膨脹係數為5ppm/℃以上、10ppm/℃以下;
- 如申請專利範圍第1項之半導體密封用環氧樹脂組成物,其中,該結晶性環氧樹脂(a1)為選自聯苯型環氧樹脂、雙酚型環氧樹脂、二苯乙烯(stilben)型環氧樹脂、二羥基苯型環氧樹脂、及萘型環氧樹脂中之至少1種結晶性環氧樹脂。
- 如申請專利範圍第1項之半導體密封用環氧樹脂組成物,其中,以相對於該(a1)成分、(a2)成分、(a3)成分之合計量的調配比例計,該(a1)成分為60重量%以上、95重量%以下,(a2)成分為2.5重量%以上、20重量%以下,(a3)成分為2.5重量%以上、20重量%以下。
- 如申請專利範圍第1項之半導體密封用環氧樹脂組成物,其中,更進一步含有苯酚樹脂系硬化劑(B)。
- 如申請專利範圍第1項之半導體密封用環氧樹脂組成物,其中,更進一步含有無機填充劑(C)。
- 如申請專利範圍第1項之半導體密封用環氧樹脂組成物,其中,更進一步含有硬化促進劑(D)。
- 如申請專利範圍第1項之半導體密封用環氧樹脂組成物,其中,該樹脂組成物之依據EMMI-1-66法之螺旋流動為120cm以上。
- 一種半導體裝置,其特徵在於,係使用申請專利範圍第1項之半導體密封用環氧樹脂組成物將半導體元件密封而成。
- 一種半導體密封用環氧樹脂組成物,其特徵在於,係使用於區域表面安裝型半導體裝置之密封者;該區域表面安裝型半導體裝置係在基板之單面搭載半導體元件,對該半導體元件所搭載之基板面側之實質性單面使用申請專利範圍第1項之半導體密封用環氧樹脂組成物進行密封而成。
- 一種區域表面安裝型半導體裝置,其特徵在於,在基板之單面搭載半導體元件,對該半導體元件所搭載之基板面側之實質性單面使用申請專利範圍第9項之半導體密封用環氧樹脂組成物進行密封而成。
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US20080128922A1 (en) | 2008-06-05 |
US8008410B2 (en) | 2011-08-30 |
KR20090082344A (ko) | 2009-07-30 |
KR101445888B1 (ko) | 2014-09-29 |
JPWO2008059612A1 (ja) | 2010-02-25 |
JP5564793B2 (ja) | 2014-08-06 |
TW200837136A (en) | 2008-09-16 |
WO2008059612A1 (en) | 2008-05-22 |
CN101516993B (zh) | 2012-05-30 |
CN101516993A (zh) | 2009-08-26 |
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