TWI416696B - Lid component and method of forming same, package structure having lid component and method of forming same - Google Patents
Lid component and method of forming same, package structure having lid component and method of forming same Download PDFInfo
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- TWI416696B TWI416696B TW098132668A TW98132668A TWI416696B TW I416696 B TWI416696 B TW I416696B TW 098132668 A TW098132668 A TW 098132668A TW 98132668 A TW98132668 A TW 98132668A TW I416696 B TWI416696 B TW I416696B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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Abstract
Description
本發明係有關於一種封裝結構及其製法,尤指一種具覆蓋構件之封裝結構及其製法。The invention relates to a package structure and a preparation method thereof, in particular to a package structure with a cover member and a preparation method thereof.
目前微機電裝置例如擴音器(microphone)廣泛地應用於行動通訊設備、音訊裝置等,而將該擴音器之尺寸微小化縮小,以製成用於助聽單元(hearing aid unit)之電容式擴音器(Condenser microphone),但該電容式擴音器容易受外界例如光及電磁波的雜訊干擾,導致係如傳訊器(transducer)之內部元件容易受損,且其傳遞訊號容易受環境影響;因此,習知電容式擴音器不僅聲壓需配合功能之需求,且需具備遮蔽內部元件之功能,以避免光及電磁波等外界雜訊干涉;一般常見的電容式擴音器請參閱第1圖。At present, microelectromechanical devices such as a microphone are widely used in mobile communication devices, audio devices, etc., and the size of the loudspeaker is miniaturized to make a capacitor for a hearing aid unit. Condenser microphone, but the condenser loudspeaker is easily disturbed by external noise such as light and electromagnetic waves, which causes internal components such as a transducer to be easily damaged, and its transmission signal is easily affected by the environment. Therefore, the conventional condenser microphone not only needs the sound pressure to match the function, but also needs to shield the internal components to avoid external noise interference such as light and electromagnetic waves. For common condenser loudspeakers, please refer to Figure 1.
如第1圖所示,習知電容式擴音器係包括:第一基板10、以第一導電黏著層13結合於該第一基板10上之導電板體11、及以第二導電黏著層13’結合於該導電板體11上之第二基板12;該第一及第二基板10,12分別由模片100及背板101所構成,且該第一基板10上設有聽孔102、半導體晶片14及位於該聽孔102上之傳訊器15;該導電板體11形成有穿孔110,以形成具有不同聲壓之空間,且對應容設該半導體元件14及傳訊器15。As shown in FIG. 1 , the conventional condenser speaker includes a first substrate 10 , a conductive plate body 11 bonded to the first substrate 10 with a first conductive adhesive layer 13 , and a second conductive adhesive layer. 13' is coupled to the second substrate 12 on the conductive plate body 11; the first and second substrates 10, 12 are respectively formed by the die 100 and the back plate 101, and the first substrate 10 is provided with an audible hole 102. The semiconductor chip 14 and the transmitter 15 on the audible hole 102; the conductive plate body 11 is formed with a through hole 110 to form a space having different sound pressures, and the semiconductor element 14 and the signal 15 are correspondingly accommodated.
習知電容式擴音器藉由該第一基板10、導電板體11、及第二基板12構成保護空間,以令該半導體元件14及傳訊器15與外界隔絕,而達到遮蔽之效果。然,該導電板體11之材質為整塊之金屬板,導致該電容式擴音器之成本增加。The conventional condenser microphone forms a protective space by the first substrate 10, the conductive plate body 11, and the second substrate 12, so that the semiconductor element 14 and the signal 15 are isolated from the outside to achieve the shielding effect. However, the conductive plate body 11 is made of a monolithic metal plate, resulting in an increase in the cost of the capacitive microphone.
因此,如何避免且克服習知技術中之問題,實已成目前亟欲解決的課題。Therefore, how to avoid and overcome the problems in the prior art has become a problem that is currently being solved.
鑑於上述習知技術之種種缺失,本發明之主要目的係在提供一種能節省成本之覆蓋構件及其製法暨具覆蓋構件之封裝結構及其製法。In view of the above-mentioned various deficiencies of the prior art, the main object of the present invention is to provide a cost-saving covering member, a manufacturing method thereof and a package structure having a covering member and a manufacturing method thereof.
為達上述及其他目的,本發明揭露一種覆蓋構件,係包括:第一板體,係具有相對之第一及第二表面,且該第一及第二表面上分別具有第一及第二金屬層,並具有貫穿該第一金屬層、第一板體及第二金屬層之開口;導體層,係設於該第一金屬層、開口之壁面、及第二金屬層上;黏著層,係設於該第二金屬層上之導體層上;以及第二板體,係具有相對之第三及第四表面,該第二板體之第三表面結合於該黏著層上以結合該第一板體,並封住該開口之一端。To achieve the above and other objects, the present invention discloses a covering member comprising: a first plate body having opposite first and second surfaces, and the first and second surfaces respectively having first and second metals a layer having an opening penetrating the first metal layer, the first plate body and the second metal layer; the conductor layer is disposed on the first metal layer, the wall surface of the opening, and the second metal layer; the adhesive layer is And the second plate body has opposite third and fourth surfaces, and the third surface of the second plate body is coupled to the adhesive layer to bond the first surface a plate body and sealing one end of the opening.
前述之覆蓋構件中,該第二板體之第三表面上具有第三金屬層,且該第二板體之第四表面上具有第四金屬層,又該第三金屬層係對應位於該開口中。In the above covering member, the third surface of the second plate has a third metal layer, and the fourth surface of the second plate has a fourth metal layer, and the third metal layer is corresponding to the opening. in.
本發明復揭露一種覆蓋構件之製法,係包括:提供一具有相對之第一及第二表面之第一板體,且該第一及第二表面上分別具有第一及第二金屬層;於該第一金屬層、第一板體及第二金屬層中形成貫穿之開口;於該第一金屬層、開口之壁面、及第二金屬層上形成導體層;於該第二金屬層上之導體層上形成黏著層,且該黏著層封住該開口之一端;以及提供一具有相對之第三及第四表面之第二板體,令該第二板體之第三表面結合至該黏著層上;其中,對應該開口中之黏著層係以雷射移除,以令該第二板體之部份第三表面外露於該開口。The invention discloses a method for manufacturing a covering member, comprising: providing a first plate body having opposite first and second surfaces, wherein the first and second surfaces respectively have first and second metal layers; a first through hole is formed in the first metal layer, the first plate body and the second metal layer; a conductor layer is formed on the first metal layer, the wall surface of the opening, and the second metal layer; and the second metal layer is formed on the second metal layer Forming an adhesive layer on the conductor layer, and the adhesive layer seals one end of the opening; and providing a second plate body having opposite third and fourth surfaces, so that the third surface of the second plate body is bonded to the adhesive And the adhesive layer corresponding to the opening is removed by laser to expose a portion of the third surface of the second plate to the opening.
前述之覆蓋構件之製法中,於該第二板體之第三表面結合至該黏著層上之後,以雷射移除對應該開口之黏著層;於另一實施例中,係於該第二板體之第三表面結合至該黏著層上之前,以雷射移除對應該開口之黏著層。In the above method for manufacturing the covering member, after the third surface of the second plate is bonded to the adhesive layer, the adhesive layer corresponding to the opening is removed by laser; in another embodiment, the second Before the third surface of the plate is bonded to the adhesive layer, the adhesive layer corresponding to the opening is removed by laser.
前述之覆蓋構件之製法中,該第二板體之第三表面上具有第三金屬層,且該第二板體之第四表面上具有第四金屬層,又該第三金屬層係對應位於該開口中。In the above method for manufacturing the covering member, the third surface of the second plate has a third metal layer, and the fourth surface of the second plate has a fourth metal layer, and the third metal layer is correspondingly located. In the opening.
本發明復揭露一種具覆蓋構件之封裝結構,係包括:第一板體,係具有相對之第一及第二表面,且該第一及第二表面上分別具有第一及第二金屬層,並具有貫穿該第一金屬層、第一板體及第二金屬層之開口;導體層,係設於該第一金屬層、開口之內壁、及第二金屬層上;黏著層,係設於該第二金屬層上之導體層上;第二板體,係具有相對之第三及第四表面,該第二板體之第三表面結合於該黏著層上以結合該第一板體,並封住該開口之一端;第三板體,係設於該第一金屬層上之導體層上,並封住該開口之另一端;以及電子元件,係設於該第三板體上且位於該開口中。The present invention discloses a package structure having a cover member, comprising: a first plate body having opposite first and second surfaces, and the first and second surfaces respectively have first and second metal layers, And having an opening extending through the first metal layer, the first plate body and the second metal layer; the conductor layer is disposed on the first metal layer, the inner wall of the opening, and the second metal layer; the adhesive layer is fastened On the conductor layer on the second metal layer; the second plate has opposite third and fourth surfaces, and the third surface of the second plate is bonded to the adhesive layer to bond the first plate And sealing one end of the opening; the third plate is disposed on the conductor layer on the first metal layer and sealing the other end of the opening; and the electronic component is disposed on the third plate And located in the opening.
前述之封裝結構中,該第二板體之第三表面上具有第三金屬層,且該第二板體之第四表面上具有第四金屬層,又該第三金屬層係對應位於該開口中。In the above package structure, the third surface of the second plate has a third metal layer, and the fourth surface of the second plate has a fourth metal layer, and the third metal layer is corresponding to the opening. in.
前述之封裝結構中,該第二板體復具有貫穿之孔洞,以露出該開口中之第三板體的部份表面,且該第三板體係為具有內層線路之線路板,以令該第三板體未結合該第一板體之表面復設有焊球,以供電性連接電路板,又該電子元件係為半導體晶片、微機電元件、或光電元件。In the above package structure, the second plate body has a through hole for exposing a part of the surface of the third plate body in the opening, and the third plate system is a circuit board having an inner layer circuit, so that the The third plate body is not provided with solder balls on the surface of the first plate body to electrically connect the circuit board, and the electronic component is a semiconductor wafer, a microelectromechanical component, or a photoelectric component.
本發明復揭露一種具覆蓋構件之封裝結構之製法,係包括:提供一具有相對之第一及第二表面之第一板體,且該第一及第二表面分別具有第一及第二金屬層;於該第一金屬層、第一板體及第二金屬層中形成貫穿之開口;於該第一金屬層、開口之壁面、及第二金屬層上形成導體層;於該第二金屬層上之導體層上形成黏著層,且該黏著層封住該開口之一端;提供一具有相對之第三及第四表面之第二板體,令該第二板體之第三表面結合至該黏著層上其中,對應該開口中之黏著層係以雷射移除,以令該第二板體之部份第三表面外露於該開口;以及於該第一金屬層上之導體層上設置第三板體,以封住該開口之另一端,且該第三板體上接置有位於該開口中之電子元件。The invention discloses a method for fabricating a package structure with a cover member, comprising: providing a first plate body having opposite first and second surfaces, wherein the first and second surfaces respectively have first and second metals a layer forming a through opening in the first metal layer, the first plate body and the second metal layer; forming a conductor layer on the first metal layer, the wall surface of the opening, and the second metal layer; and the second metal Forming an adhesive layer on the conductor layer on the layer, and the adhesive layer seals one end of the opening; providing a second plate body having opposite third and fourth surfaces, so that the third surface of the second plate body is bonded to In the adhesive layer, the adhesive layer corresponding to the opening is removed by laser to expose a portion of the third surface of the second plate to the opening; and the conductor layer on the first metal layer A third plate body is disposed to seal the other end of the opening, and the third plate body is connected with electronic components located in the opening.
前述之封裝結構之製法中,該第二板體之第三表面上具有第三金屬層;於該第二板體之第三表面結合至該黏著層上之後,以雷射移除對應該開口之黏著層,令該第三金屬層外露於該開口;於另一實施例中,係於該第二板體之第三表面結合至該黏著層上之前,以雷射移除對應該開口之黏著層。In the above method for manufacturing the package structure, the third surface of the second plate has a third metal layer; after the third surface of the second plate is bonded to the adhesive layer, the corresponding opening is removed by laser Adhesive layer, the third metal layer is exposed to the opening; in another embodiment, before the third surface of the second plate is bonded to the adhesive layer, the corresponding opening is removed by laser Adhesive layer.
前述之封裝結構之製法中,該第二板體之第四表面上具有第四金屬層;復包括於該第二板體上形成貫穿之孔洞,以露出該開口中之第三板體表面。In the above method for manufacturing the package structure, the fourth surface of the second plate has a fourth metal layer; and the second plate body is formed to form a through hole to expose the surface of the third plate in the opening.
前述之封裝結構之製法中,該第三板體係為具有內層線路之線路板,且該第三板體未結合該第一板體之表面復設有焊球,以供電性連接一電路板,且該電子元件係為半導體晶片、微機電元件、或光電元件。In the manufacturing method of the package structure, the third board system is a circuit board having an inner layer line, and the third board body is not provided with a solder ball on the surface of the first board body to electrically connect a circuit board. And the electronic component is a semiconductor wafer, a microelectromechanical component, or a photovoltaic component.
由上可知,本發明藉由單一材質之導體層形成於該第一板體之開口壁面上,以產生遮蔽功效,當其結合第二板體作為微機電封裝結構之覆蓋構件時,相較於習知技術中所使用整塊之金屬板,該第一板體可有效節省成本。As can be seen from the above, the present invention is formed on the opening wall surface of the first plate body by a conductor layer of a single material to produce a shielding effect, when it is combined with the second plate body as a covering member of the microelectromechanical package structure, compared with The monolithic metal plate used in the prior art can effectively save costs.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.
請參閱第2A至2E圖,係為本發明所揭露之一種覆蓋構件之製法。Please refer to FIGS. 2A to 2E for the preparation of a covering member disclosed in the present invention.
如第2A圖所示,提供一相對之第一及第二表面20a,20b之第一板體20,且該第一及第二表面20a,20b分別具有第一及第二金屬層200a,200b。As shown in FIG. 2A, a first plate 20 is provided opposite the first and second surfaces 20a, 20b, and the first and second surfaces 20a, 20b have first and second metal layers 200a, 200b, respectively. .
如第2B圖所示,於該第一金屬層200a、第一板體20及第二金屬層200b形成貫穿之開口201。As shown in FIG. 2B, an opening 201 is formed in the first metal layer 200a, the first plate body 20, and the second metal layer 200b.
如第2C圖所示,於該第一金屬層200a、開口201之壁面、及第二金屬層200b上形成導體層202。As shown in FIG. 2C, the conductor layer 202 is formed on the first metal layer 200a, the wall surface of the opening 201, and the second metal layer 200b.
如第2D圖所示,於該第二金屬層200b上之導體層202上形成黏著層21,且該黏著層21封住該開口201之一端;再提供一具有相對之第三及第四表面22a,22b之第二板體22,該第二板體22之第三表面22a上具有第三金屬層220a,而該第二板體22之第四表面22b上具有第四金屬層220b,令該第二板體22之第三表面22a上之第三金屬層220a結合至該黏著層21上。As shown in FIG. 2D, an adhesive layer 21 is formed on the conductor layer 202 on the second metal layer 200b, and the adhesive layer 21 seals one end of the opening 201; and an opposite third and fourth surface is provided. a second plate 22 of 22a, 22b, a third metal layer 220a on the third surface 22a of the second plate 22, and a fourth metal layer 220b on the fourth surface 22b of the second plate 22 The third metal layer 220a on the third surface 22a of the second plate body 22 is bonded to the adhesive layer 21.
如第2E圖所示,以雷射移除對應該開口201中之黏著層21,以令該第二板體22之第三表面22a上之部份第三金屬層220a外露於該開口201,俾以形成本發明之覆蓋構件。As shown in FIG. 2E, the adhesive layer 21 corresponding to the opening 201 is removed by laser to expose a portion of the third metal layer 220a on the third surface 22a of the second plate 22 to the opening 201.俾 to form the covering member of the present invention.
本發明藉由導體層202形成於該第一板體20之開口201壁面上,俾以產生遮蔽功效並節省成本。The present invention is formed on the wall surface of the opening 201 of the first plate body 20 by the conductor layer 202 to produce shielding effect and save cost.
請參閱第2F及2F’圖,將本發明之覆蓋構件結合於一第三板體23上,以形成具覆蓋構件之封裝結構;如圖所示,於該第一板體20之第一表面20a上的第一金屬層200a之導體層202上設置第三板體23,以封住該開口201之另一端,且該第三板體23上接置有位於該開口201中之電子元件,該電子元件係為半導體晶片24a、微機電元件24b或光電元件;所述之第三板體23係為具有內層線路之線路板,且藉由係為黏膠之結合層26形成於該第三板體23表面上以結合該電子元件與該第一金屬層200a上之導體層202,而該第三板體23未形成該結合層26之表面則復設有焊球25,以供電性連接一係為外部裝置之電路板。Referring to FIGS. 2F and 2F', the cover member of the present invention is bonded to a third plate body 23 to form a package structure having a cover member; as shown, on the first surface of the first plate body 20 A third plate body 23 is disposed on the conductor layer 202 of the first metal layer 200a on the 20a to seal the other end of the opening 201, and the third plate body 23 is connected with electronic components located in the opening 201. The electronic component is a semiconductor wafer 24a, a microelectromechanical component 24b or a photovoltaic component; the third plate body 23 is a circuit board having an inner layer line, and is formed by the bonding layer 26 which is a glue. The surface of the three-plate body 23 is combined with the electronic component and the conductor layer 202 on the first metal layer 200a, and the surface of the third plate body 23 not forming the bonding layer 26 is provided with solder balls 25 for power supply. Connect a circuit board that is an external device.
再者,於該第二板體22中可形成貫穿之孔洞221,以露出該開口201中之第三板體23的部份表面,如第2F圖所示。Furthermore, a through hole 221 may be formed in the second plate body 22 to expose a part of the surface of the third plate body 23 in the opening 201, as shown in FIG. 2F.
請參閱第3A至3C圖,係為本發明之覆蓋構件之另一實施例;首先提供係如第2C圖所示之結構,該第一板體30具有相對之第一及第二表面30a,30b,且該第一及第二表面30a,30b上分別設有第一及第二金屬層300a,300b,並具有貫穿該第一金屬層300a、第一板體30及第二金屬層300b之開口301,且該導體層302係形成於該第一金屬層300a、開口301壁面及第二金屬層300b上。3A to 3C are another embodiment of the covering member of the present invention; firstly, a structure as shown in FIG. 2C is provided, the first plate body 30 having opposite first and second surfaces 30a, 30b, wherein the first and second surfaces 30a, 30b are respectively provided with first and second metal layers 300a, 300b, and have a first metal layer 300a, a first plate 30 and a second metal layer 300b. The opening 301 is formed on the first metal layer 300a, the opening 301 wall surface, and the second metal layer 300b.
如第3A圖所示,於該第一板體30的第二金屬層300b上之導體層302上形成黏著層31,且該黏著層31封住該開口301之一端。As shown in FIG. 3A, an adhesive layer 31 is formed on the conductor layer 302 on the second metal layer 300b of the first board 30, and the adhesive layer 31 seals one end of the opening 301.
如第3B圖所示,以雷射移除對應該開口301之黏著層31。As shown in FIG. 3B, the adhesive layer 31 corresponding to the opening 301 is removed by laser.
如第3C圖所示,提供一具有相對之第三及第四表面32a,32b之第二板體32,且該第二板體32之第三表面32a上具有第三金屬層320a,而該第二板體32之第四表面32b上具有第四金屬層320b,又該第二板體32之第三表面32a之第三金屬層320a係結合至該黏著層31上,以令部份之第三金屬層320a外露於該開口301中,俾以完成本發明之覆蓋構件。As shown in FIG. 3C, a second plate 32 having opposite third and fourth surfaces 32a, 32b is provided, and the third surface 32a of the second plate 32 has a third metal layer 320a thereon. The fourth surface 32b of the second plate body 32 has a fourth metal layer 320b, and the third metal layer 320a of the third surface 32a of the second plate body 32 is bonded to the adhesive layer 31. The third metal layer 320a is exposed in the opening 301 to complete the covering member of the present invention.
本發明復揭露一種覆蓋構件,係包括:第一板體20,係具有相對之第一及第二表面20a,20b,且該第一及第二表面20a,20b上分別設有第一及第二金屬層200a,200b,並具有貫穿該第一金屬層200a、第一板體20及第二金屬層200b之開口201;導體層202,係設於該第一金屬層200a、開口201壁面、及第二金屬層200b上;黏著層21,係設於該第二金屬層200b上之導體層202上;以及第二板體22,係具有相對之第三及第四表面22a,22b,該第二板體22之第三表面22a結合於該黏著層21上以結合該第一板體20,並封住該開口201之一端。The present invention discloses a cover member, comprising: a first plate body 20 having opposite first and second surfaces 20a, 20b, and first and second surfaces 20a, 20b respectively provided The second metal layer 200a, 200b has an opening 201 penetrating the first metal layer 200a, the first plate body 20 and the second metal layer 200b; the conductor layer 202 is disposed on the first metal layer 200a, the wall surface of the opening 201, And the second metal layer 200b; the adhesive layer 21 is disposed on the conductor layer 202 on the second metal layer 200b; and the second plate 22 has opposite third and fourth surfaces 22a, 22b. The third surface 22a of the second plate body 22 is bonded to the adhesive layer 21 to bond the first plate body 20 and seal one end of the opening 201.
所述之第二板體22之第三表面22a及第四表面22b上分別具有第三金屬層220a及第四金屬層220b,又該第三金屬層220a係對應位於該開口201中。The third surface 22a and the fourth surface 22b of the second plate body 22 respectively have a third metal layer 220a and a fourth metal layer 220b, and the third metal layer 220a is correspondingly located in the opening 201.
本發明復揭露一種具覆蓋構件之封裝結構,係包括:第一板體20,係具有相對之第一及第二表面20a,20b,且該第一及第二表面20a,20b上分別設有第一及第二金屬層200a,200b,並具有貫穿該第一金屬層200a、第一板體20及第二金屬層200b之開口201;導體層202,係設於該第一金屬層200a、開口201壁面、及第二金屬層200b上;黏著層21,係設於該第二金屬層200b上之導體層202上;以及第二板體22,係具有相對之第三及第四表面22a,22b,該第二板體22之第三表面22a結合於該黏著層21上以結合該第一板體20,並封住該開口201之一端;第三板體23,係設於該第一金屬層200a上之導體層202上,並封住該開口201之另一端;以及電子元件,係設於該第三板體23上且位於該開口201中。The present invention discloses a package structure having a cover member, comprising: a first plate body 20 having opposite first and second surfaces 20a, 20b, and the first and second surfaces 20a, 20b are respectively provided The first and second metal layers 200a, 200b have openings 201 extending through the first metal layer 200a, the first plate 20 and the second metal layer 200b; the conductor layer 202 is disposed on the first metal layer 200a, The opening 201 wall and the second metal layer 200b; the adhesive layer 21 is disposed on the conductor layer 202 on the second metal layer 200b; and the second plate 22 has opposite third and fourth surfaces 22a The second surface 22a of the second plate 22 is bonded to the adhesive layer 21 to bond the first plate 20 and seal one end of the opening 201. The third plate 23 is attached to the first plate The conductor layer 202 on a metal layer 200a and the other end of the opening 201 are sealed; and an electronic component is disposed on the third board 23 and located in the opening 201.
所述之第二板體22之第三表面22a及第四表面22b上分別具有第三金屬層220a及第四金屬層220b,又該第三金屬層220a係對應位於該開口201中。The third surface 22a and the fourth surface 22b of the second plate body 22 respectively have a third metal layer 220a and a fourth metal layer 220b, and the third metal layer 220a is correspondingly located in the opening 201.
所述之第二板體22復具有貫穿之孔洞221,以露出該開口201中之第三板體23表面,且該第三板體23係為具有內層線路之線路板,又該第三板體23未結合該第一板體20之表面復設有焊球25,以供電性連接電路板,又該電子元件係為半導體晶片24a、微機電元件24b或光電元件。The second plate body 22 has a through hole 221 to expose the surface of the third plate body 23 in the opening 201, and the third plate body 23 is a circuit board having an inner layer line, and the third board The plate body 23 is not provided with a solder ball 25 on the surface of the first plate body 20 to electrically connect the circuit board, and the electronic component is a semiconductor wafer 24a, a microelectromechanical element 24b or a photovoltaic element.
綜上所述,本發明藉由單一材質之導體層形成於該第一板體之開口壁面上,以產生遮蔽功效,當其結合第二板體作為微機電封裝結構之覆蓋構件時,相較於習知技術所使用整塊之金屬板,本發明可有效節省成本。In summary, the present invention is formed on the opening wall surface of the first plate body by a conductor layer of a single material to produce a shielding effect, when the second plate body is combined as a covering member of the microelectromechanical package structure, The present invention can effectively save costs by using a single piece of metal plate used in the prior art.
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.
10...第一基板10. . . First substrate
100...模片100. . . Mold
101...背板101. . . Backplane
102...聽孔102. . . Listening hole
11...導電板體11. . . Conductive plate
110...穿孔110. . . perforation
12...第二基板12. . . Second substrate
13...第一導電黏著層13. . . First conductive adhesive layer
13’...第二導電黏著層13’. . . Second conductive adhesive layer
14、24a...半導體晶片14, 24a. . . Semiconductor wafer
15...傳訊器15. . . Transmitter
20、30...第一板體20, 30. . . First plate
20a、30a...第一表面20a, 30a. . . First surface
20b、30b...第二表面20b, 30b. . . Second surface
200a、300a...第一金屬層200a, 300a. . . First metal layer
200b、300b...第二金屬層200b, 300b. . . Second metal layer
201、301...開口201, 301. . . Opening
202、302...導體層202, 302. . . Conductor layer
21、31...黏著層21, 31. . . Adhesive layer
22、32...第二板體22, 32. . . Second plate
22a、32a...第三表面22a, 32a. . . Third surface
22b、32b...第四表面22b, 32b. . . Fourth surface
220a、320a...第三金屬層220a, 320a. . . Third metal layer
220b、320b...第四金屬層220b, 320b. . . Fourth metal layer
221...孔洞221. . . Hole
23...第三板體twenty three. . . Third plate
24b...微機電元件24b. . . Microelectromechanical components
25...焊球25. . . Solder ball
26...結合層26. . . Bonding layer
第1圖係為習知電容式擴音器之剖視示意圖;Figure 1 is a schematic cross-sectional view of a conventional condenser microphone;
第2A至2F圖係為本發明具覆蓋構件之封裝結構之製法之示意圖;其中,第2F’圖係為第2F圖之另一實施例;以及2A to 2F are schematic views showing a method of manufacturing a package structure having a covering member of the present invention; wherein the 2F' is another embodiment of the 2Fth image;
第3A至3C圖係為本發明覆蓋構件之另一實施製法之示意圖。3A to 3C are schematic views showing another embodiment of the covering member of the present invention.
20...第一板體20. . . First plate
20a...第一表面20a. . . First surface
20b...第二表面20b. . . Second surface
200a...第一金屬層200a. . . First metal layer
200b...第二金屬層200b. . . Second metal layer
201...開口201. . . Opening
202...導體層202. . . Conductor layer
21...黏著層twenty one. . . Adhesive layer
22...第二板體twenty two. . . Second plate
22a...第三表面22a. . . Third surface
22b...第四表面22b. . . Fourth surface
220a...第三金屬層220a. . . Third metal layer
220b...第四金屬層220b. . . Fourth metal layer
Claims (28)
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