TWI393489B - High density microwave and ultra high frequency mixed type plasma coating device - Google Patents
High density microwave and ultra high frequency mixed type plasma coating device Download PDFInfo
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本發明係有關一種高密度微波與特高頻混成式電漿鍍膜裝置，其兼具維護作業容易、系統總耗電量較小、無壓力匹配問題、可節省氫氣用量且可避免氫原子再復合、增加沉積率及均勻性與可對矩形及較大尺寸或捲繞式的工件進行加工等功效。The invention relates to a high-density microwave and ultra-high frequency mixed plasma coating device, which has the advantages of easy maintenance operation, small total system power consumption, no pressure matching problem, can save hydrogen consumption and can avoid hydrogen atom recombination. Increase deposition rate and uniformity with the ability to process rectangular and larger or wound workpieces.
參閱第九、第十及第十一圖，傳統之微波電子迴旋共振(Electron Cyclotron Resonance，簡稱ECR)電漿鍍膜之裝置係包括：一真空工作容室91；其用以設置一待加工之工件911，並可利用一環狀管路912(如第十二圖所示，亦可稱為Shower Head)而供入氫氣與矽烷(SiH4 )；一電漿產生區92，係位於該真空工作容室91內且概呈圓形；該電漿產生區92具有一第一端921及一第二端922，該第一端922朝向該工件91；一磁力產生部93，係圍繞於該電漿產生區92外週緣，該磁力產生部93可朝該電漿產生區92內產生一等磁力之共振產生面931，該共振產生面931上之磁場強度等於873高斯；一微波產生單元94，係設於該第二端922上且透過一石英微波窗941朝該電漿產生區92發出微波，該微波之頻率等於2.45G赫茲；藉此，該共振產生面931在873高斯的磁場強度與2.45G赫茲之微波的環境下因電子迴旋共振(Electron Cyclotron Resonance，簡稱ECR)形成電漿源，並持續產生高密度低離子能量之電漿，當氫氣與矽烷通過該共振產生面931，即進行氣相反應並散佈於該工件911上形成電漿鍍膜。Referring to the ninth, tenth and eleventh figures, the conventional apparatus for plasma electro-optic resonance (ECR) plasma coating comprises: a vacuum working chamber 91; for setting a workpiece to be processed 911, and can be supplied with hydrogen and decane (SiH 4 ) by using a ring-shaped pipe 912 (also referred to as a shower head as shown in FIG. 12); a plasma generating zone 92 is located in the vacuum working. The chamber 91 has a circular shape. The plasma generating portion 92 has a first end 921 and a second end 922. The first end 922 faces the workpiece 91. A magnetic force generating portion 93 surrounds the electric chamber. The outer periphery of the slurry generating region 92, the magnetic force generating portion 93 can generate an equal magnetic force generating surface 931 in the plasma generating region 92, the magnetic field intensity on the resonance generating surface 931 is equal to 873 Gauss; a microwave generating unit 94, The second end 922 is disposed on the second end 922 and transmits a microwave to the plasma generating region 92 through a quartz microwave window 941. The frequency of the microwave is equal to 2.45 G Hz; thereby, the resonance generating surface 931 has a magnetic field strength of 873 Gauss Electron cyclotron resonance in the environment of 2.45G Hz microwave (Electron C Yclotron Resonance (ECR) forms a plasma source and continuously produces a plasma of high density and low ion energy. When hydrogen and decane pass through the resonance generating surface 931, gas phase reaction is performed and dispersed on the workpiece 911 to form a plasma coating film. .
傳統裝置產生以下缺失：Traditional devices produce the following deficiencies:
[1]傳統裝置之石英微波窗易破裂。石英微波窗係為一圓形之厚石英板，若其直徑越大，則厚度也要隨之增加，才能承受真空與外界間之壓力差，但厚度過大時，又會影響微波效果。若工件之尺寸越大，則所需之石英微波窗也要加大直徑，若顧及微波效果而厚度未依比例增加，即容易造成石英微波窗破裂。[1] The quartz window of the conventional device is easily broken. The quartz microwave window is a round thick quartz plate. If the diameter is larger, the thickness must be increased to withstand the pressure difference between the vacuum and the outside. However, when the thickness is too large, the microwave effect is affected. If the size of the workpiece is larger, the required quartz microwave window should also be increased in diameter. If the microwave effect is taken into consideration, the thickness is not increased proportionally, that is, the quartz microwave window is easily broken.
[2]傳統裝置之磁力產生部之線圈耗電又太重。傳統之磁力產生部是以線圈通電來產生磁場，必須設有供電設備及水冷卻設計，不僅非常耗電，也產生線圈太重的缺點。[2] The coil of the magnetic generating portion of the conventional device consumes too much power. The conventional magnetic force generating part generates a magnetic field by energizing the coil, and must be provided with a power supply device and a water cooling design, which not only consumes a lot of electricity, but also has the disadvantage that the coil is too heavy.
[3]傳統裝置不易維護。由於傳統裝置之磁力產生部通常包含電磁鐵及線圈結構，總重量超過三百公斤，特別是當工件之尺寸規格變大時，需要直徑更大的電漿產生區及磁力產生部。一旦傳統裝置中之某些內部元件需要維護時，必須透過吊車之輔助，才能將重量超過三百公斤之磁力產生部提起，因此，維護工作十分不易。[3] Traditional devices are not easy to maintain. Since the magnetic force generating portion of the conventional device usually includes an electromagnet and a coil structure, the total weight exceeds three hundred kilograms, and particularly when the size of the workpiece becomes large, a plasma generating region and a magnetic force generating portion having a larger diameter are required. Once some of the internal components of the conventional device require maintenance, the magnetic force generating portion weighing more than three hundred kilograms must be lifted by the assistance of the crane, so maintenance work is very difficult.
[4]沉積不均。傳統裝置之共振產生面之範圍較小，所可供鍍膜之面積較小，而且該電漿產生裝置係為圓柱狀空間之型態，若下方之工件為方形(例如第五代之面板，表面為1.5m乘1.5m)，則該工件之四角區域所接受到之電漿相對較低，形成沉積不均之情形。[4] Uneven deposition. The range of the resonance generating surface of the conventional device is small, the area of the coating available for the film is small, and the plasma generating device is in the form of a cylindrical space, if the workpiece below is square (for example, the panel of the fifth generation, the surface For 1.5 m by 1.5 m), the plasma received in the four corner regions of the workpiece is relatively low, resulting in uneven deposition.
[5]鍍膜速度慢。由於沉積之速度與氫原子之數量成比例，但傳統裝置所產生之氫原子數量有限。舉例而言，已知傳統之鍍膜速度約為6/s，若以太陽能電池為例，其下層電池之鍍膜厚度若為1.5μm(即15000)，則需要15000/6=2500秒，相當於41.66分鐘，由此可推知整片電池之鍍膜應該會超過1小時，因此沉積速度慢，成本太高。[5] The coating speed is slow. Since the rate of deposition is proportional to the number of hydrogen atoms, the number of hydrogen atoms produced by conventional devices is limited. For example, it is known that the conventional coating speed is about 6 /s, if solar cells are taken as an example, the coating thickness of the lower battery is 1.5 μm (ie 15000) ), it takes 15000/6=2500 seconds, which is equivalent to 41.66 minutes. It can be inferred that the coating of the whole battery should exceed 1 hour, so the deposition speed is slow and the cost is too high.
[6]工件加工尺寸受限。傳統電漿產生區為圓形設計，對符合電漿產生區之圓形範圍內的單片圓形工件進行電漿鍍膜加工可得到較佳的加工效果，雖然符合電漿鍍膜區之圓形範圍內的非圓形工件亦可進行加工，但可能產生鍍膜不均的問題，而大於電漿鍍膜區之圓形範圍的工件，則是完全無法進行加工，工件加工尺寸受到限制。[6] The workpiece processing size is limited. The conventional plasma generation zone has a circular design, and the plasma processing of a single circular workpiece in a circular range conforming to the plasma generation zone can obtain a better processing effect, although it conforms to the circular range of the plasma coating zone. The non-circular workpiece inside can also be processed, but the problem of uneven coating may occur, and the workpiece which is larger than the circular range of the plasma coating zone is completely incapable of processing, and the processing size of the workpiece is limited.
[7]裝置相當複雜而不易變更設計。傳統電漿鍍膜裝置設計相當複雜，磁力產生部為電磁圈，不但耗電並具相當重量，且其電漿產生區為圓形，一旦要改變電漿產生區的形狀、尺寸，或是對裝置的部份結構進行變更，就必需將整組裝置重新設計，相當麻煩而不便。[7] The device is quite complex and not easy to change the design. The design of the traditional plasma coating device is quite complicated. The magnetic generating part is an electromagnetic ring, which not only consumes electricity but also has considerable weight, and its plasma generating area is circular. Once the shape and size of the plasma generating area are changed, or the device is If some of the structure is changed, it is necessary to redesign the entire set of devices, which is quite troublesome and inconvenient.
有鑑於此，必需研發出可解決上述習用缺點之技術。In view of this, it is necessary to develop a technique that can solve the above disadvantages.
本發明之目的，在於提供一種高密度微波與特高頻混成式電漿鍍膜裝置，其兼具維護作業容易、系統總耗電量較小、無壓力匹配問題、可節省氫氣用量且可避免氫原子再復合、增加沉積率及均勻性與可對矩形及較大尺寸或捲繞式的工件進行加工之優點。特別是，本發明所欲解決之問題包括：傳統裝置之石英微波窗易破裂、傳統裝置之磁力產生部之線圈耗電又太重、傳統裝置不易維護、沉積不均、鍍膜速度慢、工件加工尺寸受限與裝置相當複雜而不易變更設計等問題。The object of the present invention is to provide a high-density microwave and ultra-high frequency hybrid plasma coating device, which has the advantages of easy maintenance, small total system power consumption, no pressure matching problem, saving hydrogen consumption and avoiding hydrogen. Atomic recombination, increased deposition rate and uniformity, and the advantages of processing rectangular and larger or wound workpieces. In particular, the problems to be solved by the present invention include: the quartz window of the conventional device is easily broken, the coil of the magnetic generating portion of the conventional device consumes too much power, the conventional device is difficult to maintain, the deposition is uneven, the coating speed is slow, and the workpiece is processed. The size is limited and the device is quite complicated and it is not easy to change the design.
解決上述問題之技術手段係提供一種高密度微波與特高頻混成式電漿鍍膜裝置，其包括：一真空工作容室，係具有一頂面、一底面、兩相對之第一表面及兩相對之第二表面，其間形成一封閉之工作空間，用以容納一工件；該第二表面上設有一工作閘門；一真空抽氣部，係用以對該工作空間抽氣而使其達到一預定真空度；一對磁力產生部，係分別設於該第一表面上，每一磁力產生部具有複數個高強度之永久磁鐵，彼此間隔一預定距離，且相鄰永久磁鐵之極性相反，進而能在該工作空間中產生一等磁力之共振產生面，該共振產生面上之磁場強度等於873高斯；複數個微波產生單元，其係設於該工作空間中且鄰近該第一表面，並且介於該複數個永久磁鐵之間，用以產生微波，該微波之頻率等於2.45G赫茲；一氫氣分解部，係具有一氫氣供應部、一氫氣運送管路系統及複數個氫氣分解室；每一氫氣分解室中設有一特高頻產生單元，用以將氫氣分解成氫原子並供入該工作空間內；該氫氣分解室係設於該頂面上；一反應氣體產生部，係具有一反應氣體供應部、一反應氣體運送管路系統及複數個反應氣體暫存室；每一反應氣體暫存室用以將反應氣體供入該工作空間內；該反應氣體暫存室係設於該頂面上；一電漿阻隔網，係用以防止該工作空間中之電漿進入該氫氣分解室與該反應氣體暫存室，但允許氫原子及反應氣體通過；藉此，由於該工作空間中之共振產生面因電子迴旋共振現象而形成一電漿源，持續產生高密度低離子能量之電漿，當氫原子與反應氣體進入該工作空間中，該反應氣體與氫原子進行氣相反應並在該工件上進行表面反應，進而達到高速與高品質之電漿鍍膜。The technical means for solving the above problems is to provide a high-density microwave and ultra-high frequency hybrid plasma coating device, comprising: a vacuum working chamber having a top surface, a bottom surface, two opposite first surfaces and two opposite sides a second surface forming a closed working space for accommodating a workpiece; the second surface is provided with a working gate; and a vacuum pumping portion is configured to pump the working space to a predetermined time a degree of vacuum; a pair of magnetic generating portions respectively disposed on the first surface, each magnetic generating portion having a plurality of high-strength permanent magnets spaced apart from each other by a predetermined distance, and adjacent polar magnets having opposite polarities Generating a resonance generating surface of an equal magnetic force in the working space, the magnetic field strength of the resonance generating surface is equal to 873 Gauss; a plurality of microwave generating units are disposed in the working space and adjacent to the first surface, and Between the plurality of permanent magnets for generating microwaves, the frequency of the microwaves is equal to 2.45 GHz; a hydrogen decomposition portion having a hydrogen supply portion and a hydrogen delivery tube a system and a plurality of hydrogen decomposition chambers; each hydrogen decomposition chamber is provided with a special high frequency generating unit for decomposing hydrogen into hydrogen atoms and feeding into the working space; the hydrogen decomposition chamber is disposed on the top surface; a reaction gas generating portion having a reaction gas supply portion, a reaction gas delivery line system and a plurality of reaction gas temporary storage chambers; each reaction gas temporary storage chamber for supplying the reaction gas into the working space; a reaction gas temporary storage chamber is disposed on the top surface; a plasma barrier mesh is used to prevent plasma in the working space from entering the hydrogen decomposition chamber and the reaction gas temporary storage chamber, but allowing hydrogen atoms and reactive gases Passing; thereby, since the resonance generating surface in the working space forms a plasma source due to the electron cyclotron resonance phenomenon, the plasma of high density and low ion energy is continuously generated, and when the hydrogen atom and the reaction gas enter the working space, the The reaction gas undergoes a gas phase reaction with a hydrogen atom and performs a surface reaction on the workpiece to achieve a high-speed and high-quality plasma coating film.
本發明之上述目的與優點，不難從下述所選用實施例之詳細說明與附圖中，獲得深入瞭解。The above objects and advantages of the present invention will be readily understood from the following detailed description of the preferred embodiments illustrated herein.
茲以下列實施例並配合圖式詳細說明本發明於後：The invention will be described in detail in the following examples in conjunction with the drawings:
本發明係為一種高密度微波與特高頻混成式電漿鍍膜裝置，參閱第一圖，其包括：一真空工作容室10，係具有一頂面11、一底面12、兩相對之第一表面13及兩相對之第二表面14，其間形成一封閉之工作空間15，用以容納一工件16；該第二表面14上設有一工作閘門17；一真空抽氣部20，係用以對該工作空間15抽氣而使其達到一預定真空度；一對磁力產生部30，係分別設於該第一表面13上，每一磁力產生部30具有複數個高強度之永久磁鐵31，彼此間隔一預定距離，且相鄰永久磁鐵31之極性相反，進而能在該工作空間15中產生一等磁力之共振產生面32(如第二及第三圖所示)，該共振產生面32上之磁場強度等於873高斯；複數個微波產生單元40(例如為條狀天線，英文為slot antenna)，其係設於該工作空間15中且鄰近該第一表面13，並且介於該複數個永久磁鐵31之間，用以產生微波，該微波之頻率等於2.45G赫茲；一氫氣分解部50，係具有一氫氣供應部51、一氫氣運送管路系統52及複數個氫氣分解室53；每一氫氣分解室53中設有一特高頻產生單元54，用以將氫氣分解成氫原子並供入該工作空間15內(如第六A圖所示)；該氫氣分解室53係設於該頂面11上；一反應氣體產生部60，係具有一反應氣體供應部61、一反應氣體運送管路系統62及複數個反應氣體暫存室63；每一反應氣體暫存室63用以將反應氣體供入該工作空間15內(如第六A圖所示)；該反應氣體暫存室63係設於該頂面11上；一電漿阻隔網70，係用以防止該工作空間15中之電漿進入該氫氣分解室53與該反應氣體暫存室63，但允許氫原子及反應氣體通過；藉此，由於該工作空間15中之共振產生面32因電子迴旋共振(Electron Cyclotron Resonance，簡稱ECR)現象而形成一電漿源，持續產生高密度低離子能量之電漿，當氫原子與反應氣體進入該工作空間15中，該反應氣體與氫原子進行氣相反應並在該工件16上進行表面反應，進而達到高速與高品質之電漿鍍膜。The invention relates to a high-density microwave and ultra-high frequency mixed plasma coating device. Referring to the first figure, the invention comprises: a vacuum working chamber 10 having a top surface 11, a bottom surface 12 and two opposite firsts. The surface 13 and the two opposite second surfaces 14 define a closed working space 15 for receiving a workpiece 16; the second surface 14 is provided with a working gate 17; a vacuum pumping portion 20 is used for The working space 15 is evacuated to a predetermined degree of vacuum; a pair of magnetic force generating portions 30 are respectively disposed on the first surface 13, and each of the magnetic force generating portions 30 has a plurality of high-strength permanent magnets 31, which are mutually A predetermined distance is spaced apart, and adjacent permanent magnets 31 have opposite polarities, thereby generating an equal magnetic resonance generating surface 32 (as shown in the second and third figures) in the working space 15, the resonance generating surface 32 The magnetic field strength is equal to 873 Gauss; a plurality of microwave generating units 40 (for example, strip antennas, slot antennas in English) are disposed in the working space 15 adjacent to the first surface 13 and interposed between the plurality of permanent Between the magnets 31, used to generate micro The frequency of the microwave is equal to 2.45 GHz; a hydrogen decomposition unit 50 has a hydrogen supply unit 51, a hydrogen delivery line system 52, and a plurality of hydrogen decomposition chambers 53; each hydrogen decomposition chamber 53 is provided with a very high a frequency generating unit 54 for decomposing hydrogen into hydrogen atoms and feeding the working space 15 (as shown in FIG. 6A); the hydrogen decomposition chamber 53 is disposed on the top surface 11; and a reaction gas generating portion 60, a reaction gas supply unit 61, a reaction gas delivery line system 62 and a plurality of reaction gas temporary storage chambers 63; each reaction gas temporary storage chamber 63 is used to supply the reaction gas into the working space 15 ( As shown in FIG. 6A; the reaction gas temporary storage chamber 63 is disposed on the top surface 11; a plasma barrier mesh 70 is configured to prevent plasma in the working space 15 from entering the hydrogen decomposition chamber 53. And the reaction gas temporary chamber 63, but allowing the hydrogen atoms and the reaction gas to pass; thereby, the resonance generating surface 32 in the working space 15 forms a plasma due to the phenomenon of Electron Cyclotron Resonance (ECR). Source, continuously producing high-density, low-ion energy In the slurry, when a hydrogen atom and a reaction gas enter the working space 15, the reaction gas undergoes a gas phase reaction with a hydrogen atom and performs surface reaction on the workpiece 16, thereby achieving high-speed and high-quality plasma plating.
實務上，該第一表面13具有一第一長度L1；該第二表面14具有一第二長度L2；配合不同長度與寬度的工件16，可改變該第一長度L1與該第二長度L2的至少其中之一，使本發明能對不同尺寸的工件16(例如第六A圖所示的片式結構)進行電漿鍍膜加工，進而可對捲繞式結構的工件16(參閱第六B圖)進行加工。In practice, the first surface 13 has a first length L1; the second surface 14 has a second length L2; and the workpiece 16 of different lengths and widths can be used to change the first length L1 and the second length L2. At least one of the present invention enables the present invention to perform plasma coating processing on workpieces 16 of different sizes (e.g., the sheet structure shown in FIG. A), and thus on the workpiece 16 of the wound structure (see Figure 6B). ) Processing.
該微波產生單元40係為圓柱狀。The microwave generating unit 40 is cylindrical.
該反應氣體係為矽烷(SiH4 )，當電子迴旋共振現象產生而形成一電漿源時。該反應氣體之化學反應相當複雜，在此簡化為下列三階段。The reaction gas system is decane (SiH 4 ) when an electron cyclotron resonance phenomenon occurs to form a plasma source. The chemical reaction of the reaction gas is rather complicated and is simplified here to the following three stages.
首先，進行第一級反應，如下列之(a)或(b)：First, perform a first-stage reaction, such as (a) or (b) below:
e - +SiH 4 →SiH 2 +2H ---(a) e - + SiH 4 → SiH 2 +2 H ---(a)
e - +SiH 4 →SiH 3 +H ---(b) e - + SiH 4 → SiH 3 + H ---(b)
然後，進行氣相反應：Then, carry out the gas phase reaction:
SiH 4 +H →SiH 3 +H 2 ---(c) SiH 4 + H → SiH 3 + H 2 ---(c)
最後，在工件16表面上進行表面反應(如第八圖所示)，而SiH 3 與該工件16之矽原子結合而產生一矽膜。Finally, a surface reaction is performed on the surface of the workpiece 16 (as shown in the eighth figure), and SiH 3 is combined with the germanium atoms of the workpiece 16 to produce a tantalum film.
該氫氣分解室53與該反應氣體暫存室63可依固定比例設置(如第七A圖所示為一個氫氣分解室53、一個反應氣體暫存室63的間隔設置)，或依不同比例設置(如第七B圖所示，係舉兩個氫氣分解室53、一個反應氣體暫存室63的比例說明，實際上數量全可增減)，全依實際使用需要設計。The hydrogen decomposition chamber 53 and the reaction gas temporary storage chamber 63 may be disposed at a fixed ratio (as shown in FIG. 7A as a hydrogen decomposition chamber 53 and a reaction gas temporary storage chamber 63), or may be set according to different ratios. (As shown in Figure 7B, the ratio of the two hydrogen decomposition chambers 53 and one reaction gas temporary storage chamber 63 is described. In fact, the number can be increased or decreased.) It is designed according to actual needs.
本發明又包括：一預備容室81，係與該工作閘門17相連，該預備容室81具有一輔助抽氣部811及一輔助閘門812；該輔助抽氣部811係可對該預備容室81抽真空，該輔助閘門812供一預備進行加工之工件16進入該預備容室81暫時儲備後，再經該工作閘門17送進該工作空間15。The present invention further includes a preparatory chamber 81 connected to the working gate 17, the auxiliary chamber 81 having an auxiliary pumping portion 811 and an auxiliary gate 812; the auxiliary pumping portion 811 can be used for the working chamber The vacuum is applied to the working space 15 through the working gate 17 after the auxiliary workpiece 812 is temporarily reserved for the workpiece 16 to be processed.
茲將本發明之實施過程簡述如下：首先，將一待加工之工件16置於該預備容室81內，關閉該工作閘門17及該輔助閘門812，啟動該真空抽氣部20及該輔助抽氣部811分別將該工作空間15及該預備容室81抽真空，再開啟介於該工作空間15與該預備容室81之間的工作閘門17，將該工件16從該預備容室81移動到該工作空間15(參閱第四及第五圖)。The implementation process of the present invention is briefly described as follows: First, a workpiece 16 to be processed is placed in the preparation chamber 81, the work gate 17 and the auxiliary gate 812 are closed, and the vacuum pumping portion 20 and the auxiliary are activated. The pumping portion 811 vacuums the working space 15 and the preliminary chamber 81, and then opens the working gate 17 between the working space 15 and the preliminary chamber 81, and the workpiece 16 is taken from the preparation chamber 81. Move to the workspace 15 (see Figures 4 and 5).
啟動該磁力產生部30；該永久磁鐵31於該工作空間15內產生等磁力之共振產生面32(如第二及第三圖所示)；並啟動該微波產生單元40，使其於該工作空間15內產生2.45G赫茲的微波；再啟動該氫氣供應部51及該反應氣體供應部61；以分別朝該工作空間15內供入氫原子與矽烷(SiH4 )；當氫原子與反應氣體進入該工作空間15中，並通過共振產生面32時，即在873高斯的磁場強度與2.45G赫茲之微波的環境下產生氣相反應，並在該工件16上進行表面反應，進而達到高速與高品質之電漿鍍膜。The magnetic force generating portion 30 is activated; the permanent magnet 31 generates an equal magnetic resonance generating surface 32 (shown in the second and third figures) in the working space 15; and activates the microwave generating unit 40 to perform the work. A microwave of 2.45 G Hz is generated in the space 15; the hydrogen supply portion 51 and the reaction gas supply portion 61 are further activated to supply hydrogen atoms and decane (SiH 4 ) into the working space 15 respectively; when hydrogen atoms and reactive gases are present When entering the working space 15, and generating a surface 32 by resonance, that is, a gas phase reaction occurs in an environment of a magnetic field strength of 873 Gauss and a microwave of 2.45 GHz, and a surface reaction is performed on the workpiece 16, thereby achieving high speed and High quality plasma coating.
前述各元件之啟動時間並無實際的先後順序，全依實際需要作調整。There is no actual sequence of start-up time for each of the above components, and adjustments are made according to actual needs.
此外，只要供入特定之氣體，本發明除了可進行太陽能薄膜電池之鍍膜外，也可沉積氮化矽(SiN)抗反光層，是大陽能電池製程中極為理想之製造設備。In addition, as long as a specific gas is supplied, the present invention can deposit a tantalum nitride (SiN) anti-reflective layer in addition to the coating of the solar thin film battery, and is an extremely ideal manufacturing equipment in the process of the solar cell.
亦即，本發明具有以下優勢：That is, the present invention has the following advantages:
[1]特高頻(VHF)與均勻分佈型電子迴旋共振(UDECR)電漿系統共用一套真空系統，可解決壓力匹配問題。[1] UHF (VHF) and Uniform Distributed Electron Cyclotron Resonance (UDECR) plasma systems share a vacuum system to solve the pressure matching problem.
[2]特高頻(VHF)電漿產生之氫原子直接進入均勻分佈型電子迴旋共振電漿系統，可避免氫原子再復合。[2] Hydrogen atoms generated by ultra-high frequency (VHF) plasma directly enter the uniform distribution electron cyclotron resonance plasma system to avoid recombination of hydrogen atoms.
[3]將特高頻(VHF)-氣相沉積(PECVD)方法及氣體環狀管路(Gas shower head)一體設計可減輕重量且容易維護。[3] The ultra-high frequency (VHF)-vapor deposition (PECVD) method and the gas shower head are integrally designed to reduce weight and be easy to maintain.
[4]增加沉積率及均勻性。[4] Increase deposition rate and uniformity.
[5]系統耗電量小。[5] The system consumes a small amount of electricity.
[6]除了薄膜太陽能電池外，也可沉積氮化矽(SiN)抗反光層。[6] In addition to thin film solar cells, a tantalum nitride (SiN) anti-reflective layer can also be deposited.
本發明之優點及功效可歸納如下：The advantages and effects of the present invention can be summarized as follows:
[1]維護作業容易。由於本發明將磁力產生部改到兩側壁，所以上方之設備重量較輕，一旦內部元件或裝置需要維護時，不必動用到吊具，因此，維護作業容易。[1] Maintenance work is easy. Since the present invention changes the magnetic force generating portion to the two side walls, the upper device is light in weight, and once the internal components or devices require maintenance, it is not necessary to use the spreader, and therefore, the maintenance work is easy.
[2]系統總耗電量較小。本發明之磁力產生部為高強度的永久磁鐵，不需複雜而龐大的供電與變電系統，故，系統總耗電量較小。[2] The total power consumption of the system is small. The magnetic force generating portion of the present invention is a high-strength permanent magnet, and does not require a complicated and large power supply and power-changing system, so that the total power consumption of the system is small.
[3]無壓力匹配問題。本發明之特高頻(VHF)與均勻分佈型電子迴旋共振(UDECR)電漿系統共用一套真空系統，可以解決壓力匹配之問題。[3] No pressure matching problem. The ultra high frequency (VHF) and uniform distributed electron cyclotron resonance (UDECR) plasma system of the present invention share a vacuum system to solve the problem of pressure matching.
[4]可節省氫氣用量且可避免氫原子再復合。本發明中之特高頻(VHF)所產生之氫原子直接進入均勻分佈型電子迴旋共振(UDECR)電漿系統中，不僅可節省氫氣之用量，也可避免氫原子再復合的問題。[4] can save hydrogen consumption and avoid recombination of hydrogen atoms. The hydrogen atom generated by the ultra high frequency (VHF) in the present invention directly enters the uniform distribution electron cyclotron resonance (UDECR) plasma system, which not only saves the amount of hydrogen but also avoids the problem of recombination of hydrogen atoms.
[5]增加沉積率及均勻性。在電漿強化之化學氣相沉積(PECVD)方法中，若提供越多之氫原子，則鍍膜速度越快。而本發明之氫原子是由位於上方之氫氣分解部，透過特高頻(VHF)來產生氫原子，因此可以產生大量之氫原子，同時平均的分佈，故，可以增加沉積率及均勻性。[5] Increase deposition rate and uniformity. In the plasma enhanced chemical vapor deposition (PECVD) method, if more hydrogen atoms are supplied, the coating speed is faster. On the other hand, the hydrogen atom of the present invention generates a hydrogen atom by the ultrahigh frequency (VHF) generated by the hydrogen decomposition unit located above, so that a large amount of hydrogen atoms can be generated and the average distribution is obtained, so that the deposition rate and uniformity can be increased.
[6]可對矩形及較大尺寸或捲繞式的工件進行加工。當工件變寬或變長時，本發明只要改變兩個第一表面的間距與長度即可(若有需要，頂多再改變兩個第二表面的長度，此屬簡易技術)，其餘設備無需大幅變動，即可對不同尺寸的工件進行電漿鍍膜，且可供捲繞式的工作進行加工。[6] It is possible to machine rectangular and larger or wound workpieces. When the workpiece is widened or lengthened, the present invention only needs to change the pitch and length of the two first surfaces (if necessary, the length of the two second surfaces is changed at most, which is a simple technique), and the remaining devices need not be needed. With large variations, it is possible to plasma-coat different sizes of workpieces and to work in a roll-up operation.
以上僅是藉由較佳實施例詳細說明本發明，對於該實施例所做的任何簡單修改與變化，皆不脫離本發明之精神與範圍。The present invention has been described in detail with reference to the preferred embodiments of the present invention, without departing from the spirit and scope of the invention.
10、91．．．真空工作容室10, 91. . . Vacuum working chamber
11．．．頂面11. . . Top surface
12．．．底面12. . . Bottom
13．．．第一表面13. . . First surface
14．．．第二表面14. . . Second surface
15．．．工作空間15. . . Workspace
16、911．．．工件16,911. . . Workpiece
17．．．工作閘門17. . . Working gate
20．．．真空抽氣部20. . . Vacuum pumping department
30、93．．．磁力產生部30, 93. . . Magnetic force generation
31．．．永久磁鐵31. . . permanent magnet
32、931．．．共振產生面32,931. . . Resonance generating surface
40．．．微波產生單元40. . . Microwave generating unit
50．．．氫氣分解部50. . . Hydrogen decomposition unit
51．．．氫氣供應部51. . . Hydrogen supply department
52．．．氫氣運送管路系統52. . . Hydrogen delivery piping system
53．．．氫氣分解室53. . . Hydrogen decomposition chamber
54．．．特高頻產生單元54. . . UHF generating unit
60．．．反應氣體產生部60. . . Reaction gas generating unit
61．．．反應氣體供應部61. . . Reaction gas supply
62．．．反應氣體運送管路系統62. . . Reaction gas delivery piping system
63．．．反應氣體暫存室63. . . Reaction gas storage room
70．．．電漿阻隔網70. . . Plasma barrier network
81．．．預備容室81. . . Preparatory room
811．．．輔助抽氣部811. . . Auxiliary pumping department
812．．．輔助閘門812. . . Auxiliary gate
912．．．環狀管路912. . . Ring pipe
92．．．電漿產生區92. . . Plasma generation zone
921．．．第一端921. . . First end
922．．．第二端922. . . Second end
94．．．微波產生單元94. . . Microwave generating unit
941．．．石英微波窗941. . . Quartz microwave window
L1．．．第一長度L1. . . First length
L2．．．第二長度L2. . . Second length
第一圖係本發明之分解示意圖The first figure is an exploded view of the present invention
第二圖係本發明之共振產生面之俯視示意圖The second figure is a schematic top view of the resonance generating surface of the present invention.
第三圖係本發明之共振產生面之其他角度示意圖The third figure is a schematic view of other angles of the resonance generating surface of the present invention.
第四圖係本發明之部分結構之動作前之俯視圖The fourth figure is a plan view of the partial structure of the present invention before the action
第五圖係本發明之部分結構之動作後之俯視圖The fifth drawing is a plan view of the operation of the partial structure of the present invention.
第六A圖係本發明之第一種應用例之剖視圖Figure 6A is a cross-sectional view of a first application example of the present invention
第六B圖係本發明之第二種應用例之剖視圖Figure 6B is a cross-sectional view of a second application example of the present invention
第七A及第七B圖係分別為本發明之部分結構的不同實施例7A and 7B are respectively different embodiments of part of the structure of the present invention
第八圖係本發明之電漿鍍膜之化學份子結合之示意圖The eighth figure is a schematic diagram of the chemical combination of the plasma coating film of the present invention.
第九圖係傳統電漿鍍膜裝置之示意圖The ninth picture is a schematic diagram of a conventional plasma coating device
第十圖係第九圖之電子成螺旋運動之示意圖The tenth figure is a schematic diagram of the electron-forming spiral motion of the ninth figure
第十一圖係第九圖之局部結構的放大示意圖The eleventh figure is an enlarged schematic view of the partial structure of the ninth figure
第十二圖係第十一圖之部分結構之放大示意圖The twelfth figure is an enlarged schematic view of a part of the structure of the eleventh figure
10．．．真空工作容室10. . . Vacuum working chamber
11．．．頂面11. . . Top surface
12．．．底面12. . . Bottom
13．．．第一表面13. . . First surface
14．．．第二表面14. . . Second surface
15．．．工作空間15. . . Workspace
16．．．工件16. . . Workpiece
17．．．工作閘門17. . . Working gate
20．．．真空抽氣部20. . . Vacuum pumping department
30．．．磁力產生部30. . . Magnetic force generation
31．．．永久磁鐵31. . . permanent magnet
40．．．微波產生單元40. . . Microwave generating unit
50．．．氫氣分解部50. . . Hydrogen decomposition unit
51．．．氫氣供應部51. . . Hydrogen supply department
52．．．氫氣運送管路系統52. . . Hydrogen delivery piping system
53．．．氫氣分解室53. . . Hydrogen decomposition chamber
54．．．特高頻產生單元54. . . UHF generating unit
60．．．反應氣體產生部60. . . Reaction gas generating unit
61．．．反應氣體供應部61. . . Reaction gas supply
62．．．反應氣體運送管路系統62. . . Reaction gas delivery piping system
63．．．反應氣體暫存室63. . . Reaction gas storage room
70．．．電漿阻隔網70. . . Plasma barrier network
81．．．預備容室81. . . Preparatory room
811．．．輔助抽氣部811. . . Auxiliary pumping department
812．．．輔助閘門812. . . Auxiliary gate
L1．．．第一長度L1. . . First length
L2．．．第二長度L2. . . Second length
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|---|---|---|---|---|
| JPH0621011A (en) * | 1992-01-29 | 1994-01-28 | Applied Materials Inc | Method for reactive ion etching containing hydrogen radicals |
| TW312815B (en) * | 1995-12-15 | 1997-08-11 | Hitachi Ltd | |
| WO2000030168A1 (en) * | 1998-11-16 | 2000-05-25 | Applied Materials, Inc. | Process for etching oxide using hexafluorobutadiene or related hydroflourocarbons and manifesting a wide process window |
| TW430882B (en) * | 1997-11-20 | 2001-04-21 | Tokyo Electron Ltd | Plasma film forming method |
| TW514700B (en) * | 2000-04-13 | 2002-12-21 | Tokyo Electron Ltd | Stand alone plasma vacuum pump |
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2009
- 2009-06-17 TW TW98120211A patent/TWI393489B/en not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0621011A (en) * | 1992-01-29 | 1994-01-28 | Applied Materials Inc | Method for reactive ion etching containing hydrogen radicals |
| TW312815B (en) * | 1995-12-15 | 1997-08-11 | Hitachi Ltd | |
| TW430882B (en) * | 1997-11-20 | 2001-04-21 | Tokyo Electron Ltd | Plasma film forming method |
| WO2000030168A1 (en) * | 1998-11-16 | 2000-05-25 | Applied Materials, Inc. | Process for etching oxide using hexafluorobutadiene or related hydroflourocarbons and manifesting a wide process window |
| TW514700B (en) * | 2000-04-13 | 2002-12-21 | Tokyo Electron Ltd | Stand alone plasma vacuum pump |
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