TWI391340B - Synthetic quartz glass fixture treatment method and the synthesis of synthetic quartz glass fixture and its use - Google Patents

Synthetic quartz glass fixture treatment method and the synthesis of synthetic quartz glass fixture and its use Download PDF

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TWI391340B
TWI391340B TW97147429A TW97147429A TWI391340B TW I391340 B TWI391340 B TW I391340B TW 97147429 A TW97147429 A TW 97147429A TW 97147429 A TW97147429 A TW 97147429A TW I391340 B TWI391340 B TW I391340B
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quartz glass
synthetic quartz
glass fixture
jig
fixture
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TW200938497A (en
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Tatsuhiro Sato
Akiyoshi Tsuchida
Sadao Hattori
Hiroki Iwakabe
Susumu Ito
Norikazu Fujii
Kyoichi Inaki
Hiroyuki Kimura
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Shinetsu Quartz Prod
Fukui Shin Etsu Quartz Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0075—Cleaning of glass

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  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
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  • Organic Chemistry (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Glass Compositions (AREA)
  • Surface Treatment Of Glass (AREA)

Description

合成石英玻璃治具之處理方法及所得之合成石英玻璃治具以及其使用方法Method for treating synthetic quartz glass fixture and synthetic quartz glass fixture obtained thereby and method of using same

本發明係有關於合成石英玻璃冶具之處理方法及以該處理方法所得之合成石英玻璃治具以及前記合成石英玻璃治具之使用方法，更詳言之是有關於在高溫下的半導體元件之製造時所使用之爐管(tube)或晶舟(boat)、或矽晶圓之洗淨等所使用的洗淨槽或槽體等的合成石英玻璃冶具之處理方法、及以該處理方法所得之合成石英玻璃治具以及前記合成石英玻璃治具之使用方法。The invention relates to a method for processing a synthetic quartz glass tool and a method for using the synthetic quartz glass jig obtained by the method and a method for preparing a synthetic quartz glass jig, and more particularly relates to the manufacture of a semiconductor element at a high temperature. a treatment method for a synthetic quartz glass tool such as a cleaning tank or a tank used for washing a tube or a boat, or a cleaning of a wafer, and a treatment method obtained by the treatment method Synthetic quartz glass fixture and the method of using the synthetic quartz glass fixture.

合成石英玻璃係非常高純度，使用其的石英玻璃治具之製造，只要是在高純度的氛圍氣體中進行，就可維持合成石英玻璃的高純度，而幾乎不會有金屬雜質等所造成之對矽晶圓之影響。可是，近年來，隨著矽晶圓表面之金屬雜質分析的靈敏度提升，極微量之金屬雜質也能被偵測，而且以矽晶圓所作成的元件本身也要求高品質化，即使有極微量的金屬雜質，也會造成很大的影響。因此在先前的高純度石英玻璃治具，會有難以充分阻止金屬雜質對矽晶圓造成污染之問題。作為解決該問題之方法係有，以HF溶液進行長時間洗淨以去除表面及表層中所含有之金屬雜質的方法，該純化方法並不能完全去除已陷入治具的深層領域的金屬雜質，深層部的金屬雜質係在矽晶圓的高溫熱處理時發生擴散而污染矽晶圓，存在如此缺點。於是，將石英玻璃構件在含Cl的氣體氛圍中進行加熱處理，使Li、Na、K等之金屬雜質的深層部之濃度達到低水準的純化方法，係被專利文獻1所提出。可是，該專利文獻1的純化方法中，石英玻璃構件中的Li濃度必須要降到0.2ppm以下，因此工程所需經費高昂，能夠以更簡便的方法來去除石英玻璃治具中的金屬雜質之方法，係被人們所熱烈需求。Synthetic quartz glass is very high-purity, and the quartz glass jig using it can maintain the high purity of synthetic quartz glass without any metal impurities, as long as it is carried out in a high-purity atmosphere gas. The impact on the wafer. However, in recent years, as the sensitivity of metal impurity analysis on the surface of germanium wafers has increased, a very small amount of metal impurities can be detected, and the components made of germanium wafers are also required to be of high quality, even if there is a trace amount. Metal impurities can also have a big impact. Therefore, in the previous high-purity quartz glass fixture, there is a problem that it is difficult to sufficiently prevent metal impurities from contaminating the wafer. As a method for solving this problem, there is a method of removing the metal impurities contained in the surface and the surface layer by HF solution for a long time, and the purification method cannot completely remove the metal impurities in the deep field which has fallen into the jig, deep layer. The metal impurities in the part are diffused during the high-temperature heat treatment of the germanium wafer to contaminate the germanium wafer, which has such a disadvantage. Then, a method of purifying a quartz glass member in a gas atmosphere containing Cl to achieve a low level of concentration of a deep portion of metal impurities such as Li, Na, or K is proposed in Patent Document 1. However, in the purification method of Patent Document 1, the concentration of Li in the quartz glass member must be reduced to 0.2 ppm or less, so that the engineering cost is high, and the metal impurities in the quartz glass fixture can be removed in a simpler manner. The method is enthusiastically demanded by people.

[專利文獻1]日本特開2006-315886號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-315886

有鑑於如此現狀，本發明人們，針對合成石英玻璃冶具表面及表層所含有之金屬雜質的舉動進行反覆深入研究，發現到以HF溶液將表層進行蝕刻處理後，再用高溫氛圍氣體進行處理，就可使深層部的金屬雜質也被充分去除，而完成本發明。In view of the current situation, the present inventors have conducted intensive studies on the behavior of the metal impurities contained in the surface and the surface layer of the synthetic quartz glass smelting tool, and found that the surface layer is etched by the HF solution, and then treated with a high temperature atmosphere gas. The metal impurities in the deep portion can also be sufficiently removed to complete the present invention.

本發明的目的在於，提供一種可將合成石英玻璃治具之深層部為止的金屬雜質，高度地加以去除之處理方法。An object of the present invention is to provide a method for highly removing metal impurities from a deep portion of a synthetic quartz glass fixture.

又，本發明的目的為，提供以上記處理方法所得到的合成石英玻璃治具。Further, an object of the present invention is to provide a synthetic quartz glass jig obtained by the above-described processing method.

為了達成上記目的，本發明係有關於一種合成石英玻璃冶具之處理方法及以該處理方法所得之合成石英玻璃治具，其特徵為，將表面已平滑化之合成石英玻璃治具，以HF溶液將其表層起算30μm以上進行蝕刻去除後，以400℃～1300℃的高溫氛圍氣體進行處理而去除所含有之金屬雜質。In order to achieve the above object, the present invention relates to a method for treating a synthetic quartz glass tool and a synthetic quartz glass tool obtained by the method, characterized in that the synthetic quartz glass fixture having a smooth surface has an HF solution. After the surface layer is etched and removed by 30 μm or more, it is treated with a high-temperature atmosphere gas of 400 ° C to 1300 ° C to remove metal impurities contained therein.

本發明的處理方法，係將表面已平滑化之合成石英玻璃治具，以HF溶液將其表層起算30μm以上進行蝕刻去除後，在特定的高溫氛圍氣體下進行處理，藉由如此簡便的方法就可去除到治具深層部的金屬雜質，於使用其之矽晶圓的熱處理中，可減少金屬雜質所造成之污染，可獲得高品質的矽晶圓，達成如此之效果。The treatment method of the present invention is a method for synthesizing a quartz glass fixture having a surface smoothed by etching a surface layer of 30 μm or more in an HF solution, and then performing treatment under a specific high-temperature atmosphere, thereby obtaining a simple method. The metal impurities in the deep part of the fixture can be removed, and the heat treatment of the wafer can be used to reduce the contamination caused by the metal impurities, and a high-quality germanium wafer can be obtained to achieve such an effect.

在本發明的處理方法中，將表面已平滑化之合成石英玻璃治具的表面以HF溶液蝕刻30μm以上，是很重要的。若蝕刻的深度低於30μm以下，則無法完全去除擴散較慢的金屬雜質。關於該HF溶液的濃度或蝕刻時間，並無特別規定，但理想上是5～50重量%的HF濃度，進行1～50小時的處理。當HF濃度較低時，例如5重量%的HF濃度下，處理時間需要30～40小時，但若為高濃度時，例如49重量%的HF濃度下，則處理時間係約1小時就足夠。以前記HF溶液進行的蝕刻處理，係對合成石英玻璃治具的表面粗度0.1μm以下之平滑的合成石英玻璃治具來實施即可。若治具的表面發生凹凸，則就算在其表面沒有微裂痕開放，微裂痕仍會存在於表面附近，透過該微裂痕，金屬雜質的擴散會變快。又，若表層被時刻則微裂痕會朝合成石英玻璃治具內表面開放而造成不良情形。平滑化係在OH濃度較高的氛圍下進行退火處理或以含有OH基的火焰進行加熱處理即可。藉由前記加熱處理，也會在治具的極表層，形成應變層。治具表面的粗度係為前記範圍且在極表層形成有應變層，藉此，擴散較快的鹼金族元素(Na、K、Li)或重金屬(Cu等)的一部分會被陷住而難以朝較深方向擴散，因此變得容易去除。反之，若表面粗度超過前記範圍，則HF溶液的蝕刻會過度進行而呈粗面化，因而難以去除金屬雜質。In the treatment method of the present invention, it is important to etch the surface of the synthetic quartz glass fixture having a smooth surface with an HF solution of 30 μm or more. If the etching depth is less than 30 μm, the metal impurities which are slowly diffused cannot be completely removed. The concentration or etching time of the HF solution is not particularly limited, but is preferably 5 to 50% by weight of HF concentration, and is treated for 1 to 50 hours. When the HF concentration is low, for example, at a HF concentration of 5% by weight, the treatment time is required to be 30 to 40 hours, but in the case of a high concentration, for example, a concentration of HF of 49% by weight, the treatment time is about 1 hour. The etching treatment by the HF solution may be carried out by using a smooth synthetic quartz glass jig having a surface roughness of 0.1 μm or less on the synthetic quartz glass fixture. If the surface of the jig has irregularities, even if there are no micro-cracks on the surface, micro-cracks will still exist near the surface, and the diffusion of metal impurities will become faster through the micro-cracks. Moreover, if the surface layer is momentarily, the micro-cracks will open to the inner surface of the synthetic quartz glass fixture, causing a problem. The smoothing treatment may be performed by annealing in an atmosphere having a high OH concentration or by heat treatment with a flame containing an OH group. The strain layer is also formed on the extreme surface layer of the jig by the heat treatment described above. The thickness of the surface of the jig is a pre-recorded range and a strained layer is formed on the surface layer, whereby a part of the alkali metal element (Na, K, Li) or heavy metal (Cu, etc.) which diffuses faster is trapped. It is difficult to diffuse in a deeper direction, so it becomes easy to remove. On the other hand, if the surface roughness exceeds the range of the former, the etching of the HF solution is excessively performed to be roughened, so that it is difficult to remove the metal impurities.

本發明的處理方法中的高溫氛圍氣體，係為還原性氛圍氣體且溫度為400℃～1300℃即可。作為還原性氛圍氣體可舉例如含有HCl、Cl2 的氣體。藉由使高溫氛圍氣體帶有還原性，可防止合成石英玻璃中所含之金屬雜質在表面發生氧化，可使金屬雜質的外方擴散變得容易，而易於去除。氛圍氣體溫度較理想為1000℃以上。在該溫度下，合成石英玻璃中所含有之鹼金屬等擴散迅速的金屬元素的外方擴散，會變得尤其良好。具體而言，擴散係數為1×10-10 (1E-10)cm2 /sec的金屬元素，係在前記溫度下至少要4小時的加熱處理才能使其外方擴散；擴散係數1×10-9 (1E-9)m2 /sec的金屬元素則須至少20分鐘以上；擴散係數1×10-8 (1E-8)cm2 /sec的金屬元素則須2～3分鐘。理想上係採用稍長於所計算之處理時間即可。可是，長時間的高溫處理下，會使石英玻璃表面起的SiO2 成分變成氣態而昇華，導致石英玻璃表面缺損，因此在該缺損發生之前停止熱處理即可。The high-temperature atmosphere gas in the treatment method of the present invention may be a reducing atmosphere gas and the temperature may be 400 ° C to 1300 ° C. The reducing atmosphere gas may, for example, be a gas containing HCl or Cl 2 . By making the high-temperature atmosphere gas reductive, it is possible to prevent the metal impurities contained in the synthetic quartz glass from being oxidized on the surface, and it is easy to diffuse the metal impurities, and it is easy to remove. The ambient gas temperature is preferably 1000 ° C or more. At this temperature, the outward diffusion of a metal element such as an alkali metal contained in the synthetic quartz glass, which is rapidly diffused, is particularly excellent. Specifically, a metal element having a diffusion coefficient of 1 × 10 -10 (1E - 10) cm 2 /sec is subjected to heat treatment at a temperature of at least 4 hours before it can be externally diffused; a diffusion coefficient of 1 × 10 - 9 (1E-9) m 2 /sec metal element must be at least 20 minutes; diffusion factor 1 × 10 -8 (1E-8) cm 2 / sec metal element must be 2 to 3 minutes. Ideally, it is slightly longer than the calculated processing time. However, under a long period of high-temperature treatment, the SiO 2 component on the surface of the quartz glass becomes gaseous and sublimes, resulting in a defect in the surface of the quartz glass. Therefore, the heat treatment may be stopped before the occurrence of the defect.

以下將舉出本發明的實施例來說明，但這些實施例僅為例示性質，並不應被限定解釋。The embodiments of the present invention will be described below, but these examples are merely illustrative and should not be construed as limiting.

實施例1Example 1

使用表1所示的合成石英玻璃素材來製造合成石英玻璃爐管。在爐管製造的最終工程中，為了表面的平滑化及極表層的應變層形成，而以氫氧焰進行充分燒成。在該合成石英玻璃爐管的內表面，滴下HF溶液，測定表面1μm、30μm及90μm深處的金屬雜質含有量。其結果示於表1。將該合成石英玻璃爐管以49重量%的HF溶液蝕刻1小時，從表面起去除30μm，然後，在含有HCl的氛圍下以1100℃進行1小時加熱處理。測定該氛圍氣體處理後的治具表面1μm深度的金屬雜質含有量。其結果示於表1的實施例製品。由表1可知，在本發明的處理方法中，可使製品中的鹼金族元素、Cu、Al、Fe等金屬雜質，到深層部為止都被減低，即使用來對矽晶圓進行熱處理，也不會有金屬雜質所造成的不良影響。A synthetic quartz glass furnace tube was produced using the synthetic quartz glass material shown in Table 1. In the final process of furnace tube production, in order to smooth the surface and form the strain layer of the extreme surface layer, it is sufficiently fired by an oxyhydrogen flame. The HF solution was dropped on the inner surface of the synthetic quartz glass tube, and the content of metal impurities on the surfaces of 1 μm, 30 μm, and 90 μm was measured. The results are shown in Table 1. The synthetic quartz glass furnace tube was etched with a 49% by weight HF solution for 1 hour, removed 30 μm from the surface, and then heat-treated at 1100 ° C for 1 hour in an atmosphere containing HCl. The metal impurity content in the depth of 1 μm on the surface of the jig after the atmosphere gas treatment was measured. The results are shown in the examples of the articles of Table 1. As can be seen from Table 1, in the treatment method of the present invention, alkali metal elements in the product, metal impurities such as Cu, Al, and Fe are all reduced to the deep portion, even if used for heat treatment of the tantalum wafer. There are no adverse effects caused by metal impurities.

比較例1Comparative example 1

使用表2所示的合成石英玻璃素材來製造合成石英玻璃爐管。在爐管製造的最終工程中，為了治具表面的平滑化及極表層的應變層形成處理，而以氫氧焰進行燒成。在該合成石英玻璃爐管的內表面，滴下HF溶液，測定表面1μm、30μm及90μm深處的金屬雜質濃度。其結果示於表2。再者，將該合成石英玻璃爐管以49重量%的HF溶液蝕刻3小時，從表面起蝕刻90μm。其後，測定表面1μm深處的金屬雜質濃度。其結果示於表2。如表2所示，無法使深層部的金屬雜質濃度減小，於矽晶圓的高溫處理中，會稍微看到金屬雜質所造成的污染。A synthetic quartz glass furnace tube was produced using the synthetic quartz glass material shown in Table 2. In the final project of the furnace tube production, in order to smooth the surface of the jig and form the strain layer of the surface layer, it is fired by an oxyhydrogen flame. On the inner surface of the synthetic quartz glass tube, an HF solution was dropped, and the metal impurity concentrations at the depths of 1 μm, 30 μm, and 90 μm were measured. The results are shown in Table 2. Further, the synthetic quartz glass furnace tube was etched in a 49 wt% HF solution for 3 hours, and etched 90 μm from the surface. Thereafter, the metal impurity concentration at a depth of 1 μm on the surface was measured. The results are shown in Table 2. As shown in Table 2, the metal impurity concentration in the deep portion could not be reduced, and the contamination caused by the metal impurities was slightly observed in the high temperature treatment of the tantalum wafer.

比較例2Comparative example 2

使用表3所示的合成石英玻璃素材來製造合成石英玻璃爐管。在爐管製造的最終工程中，為了平滑化及極表層的應變層形成處理，而以氫氧焰進行燒成。在該合成石英玻璃爐管的內表面，滴下HF溶液，測定表面1μm、30μm及90μm深處的雜質濃度。再者，將該合成石英玻璃爐管以5重量%的HF溶液蝕刻1小時，從表面起蝕刻去除1μm後，在含有HCl的氛圍下以1100℃進行1小時的加熱。測定氛圍氣體處理後的表面的1μm深處的金屬雜質濃度。其結果示於表3。如表3所示，無法使深層部的金屬雜質濃度減小，於矽晶圓的高溫處理中，會稍微看到金屬雜質所造成的污染。A synthetic quartz glass furnace tube was produced using the synthetic quartz glass material shown in Table 3. In the final process of furnace tube production, in order to smooth and form the strain layer formation process of the surface layer, it is fired by an oxyhydrogen flame. On the inner surface of the synthetic quartz glass tube, an HF solution was dropped, and the impurity concentrations at the depths of 1 μm, 30 μm, and 90 μm were measured. Further, the synthetic quartz glass furnace tube was etched in a 5% by weight HF solution for 1 hour, and after etching to remove 1 μm from the surface, it was heated at 1,100 ° C for 1 hour in an atmosphere containing HCl. The metal impurity concentration at a depth of 1 μm on the surface after the atmosphere gas treatment was measured. The results are shown in Table 3. As shown in Table 3, the metal impurity concentration in the deep portion could not be reduced, and the contamination caused by the metal impurities was slightly observed in the high temperature treatment of the tantalum wafer.

實施例2Example 2

使用表4所示的合成石英玻璃素材來作成合成石英玻璃爐管及晶舟各2組。1組係以本發明的處理方法亦即49重量%的HF溶液蝕刻50μm後，在含有HCl的氛圍下以1100℃進行1小時加熱處理。再者，使用表4所示的天然石英玻璃素材來作成天然石英玻璃爐管及晶舟各1組。使用前記各組爐管及晶舟，以1100℃ 1小時、氧氣氛圍中將Si晶圓進行加熱處理，使晶圓表面形成100nm的氧化膜。以ICP-MS分析器來測定所得之各氧化膜中的雜質含有量。其結果示於圖1。如圖1所示，使用經過本發明之處理而得到的合成石英玻璃治具，所形成的氧化膜中的雜質含有量，相較於使用未進行該處理之合成石英玻璃治具或天然石英玻璃治具所形成的氧化膜中的雜質含有量，是較低的值。Two sets of synthetic quartz glass furnace tubes and wafer boats were prepared using the synthetic quartz glass materials shown in Table 4. One set was etched by 50 μm in a 49% by weight HF solution according to the treatment method of the present invention, and then heat-treated at 1,100 ° C for 1 hour in an atmosphere containing HCl. Further, each of the natural quartz glass furnace tubes and the crystal boat was formed using the natural quartz glass material shown in Table 4. Each group of furnace tubes and boat was used to heat the Si wafer at 1100 ° C for 1 hour in an oxygen atmosphere to form an oxide film of 100 nm on the surface of the wafer. The amount of impurities in each of the obtained oxide films was measured by an ICP-MS analyzer. The result is shown in Fig. 1. As shown in FIG. 1, the synthetic quartz glass jig obtained by the treatment of the present invention has an impurity content in the formed oxide film compared to the use of a synthetic quartz glass fixture or natural quartz glass which is not subjected to the treatment. The amount of impurities in the oxide film formed by the jig is a low value.

[產業上利用之可能性][Possibility of industrial use]

在本發明的處理方法中，可以簡便的方法獲得高純度之石英玻璃治具，使用所得之石英玻璃治具來對矽晶圓進行高溫熱處理，金屬雜質所造成的污染會減少，對於作為半導體晶圓的熱處理用治具來說，是有用的。In the treatment method of the present invention, a high-purity quartz glass fixture can be obtained in a simple manner, and the obtained quartz glass fixture is used to heat-treat the silicon wafer at a high temperature, and the contamination caused by the metal impurities is reduced, as a semiconductor crystal. Round heat treatment is useful for fixtures.

圖1係使用石英玻璃治具進行熱處理後的矽晶圓之氧化膜中的雜質含有量，以長條圖表示的圖。於圖1中，白長條係表示使用表4之合成石英玻璃來作成通常的合成矽酸玻璃治具並加以使用時的雜質含有量；橫線長條係表示使用本發明之合成石英玻璃治具時的雜質含有量，黑長條係表示使用表4之天然石英玻璃素材來作成天然石英玻璃治具並加以使用時的雜質含有量。Fig. 1 is a graph showing the amount of impurities in an oxide film of a tantalum wafer after heat treatment using a quartz glass jig, as shown in a bar graph. In Fig. 1, the white strips indicate the amount of impurities when the synthetic quartz glass of Table 4 is used to prepare a conventional synthetic tannic acid glass fixture, and the horizontal strip length indicates the use of the synthetic quartz glass of the present invention. The amount of impurities contained in the time is black, and the black strips indicate the amount of impurities when the natural quartz glass jig is used as the natural quartz glass jig.

Claims (5)

一種合成石英玻璃冶具之處理方法，其特徵為，將表面已平滑化之合成石英玻璃治具，以HF溶液將其表層起算30μm以上進行蝕刻去除後，以400℃~1300℃的含有鹵素的還原性氛圍氣體進行處理而去除所含有之金屬雜質。 The invention relates to a method for processing a synthetic quartz glass tool, which is characterized in that a synthetic quartz glass fixture having a surface smoothed is etched and removed by an HF solution at a surface of 30 μm or more, and then reduced by halogen at 400 ° C to 1300 ° C. The atmosphere gas is treated to remove the metal impurities contained therein. 如申請專利範圍第1項所記載之合成石英玻璃冶具之處理方法，其中，金屬雜質係為，在1000℃下的擴散係數是1×10-10 cm2 /sec以上的鹼金屬。The method for treating a synthetic quartz glass tool according to the first aspect of the invention, wherein the metal impurity is an alkali metal having a diffusion coefficient at 1000 ° C of 1 × 10 -10 cm 2 /sec or more. 如申請專利範圍第1項或第2項所記載之合成石英玻璃冶具之處理方法，其中，含有鹵素的氛圍氣體係為，含有HCl或Cl2 的氛圍氣體。The method for treating a synthetic quartz glass tool according to the first or second aspect of the invention, wherein the halogen-containing atmosphere system is an atmosphere containing HCl or Cl 2 . 如申請專利範圍第1項或第2項所記載之合成石英玻璃冶具之處理方法，其中，表面已平滑化之合成石英玻璃治具係為，已使用過的治具或製造時受到污染之治具。 The method for treating a synthetic quartz glass tool according to the first or second aspect of the patent application, wherein the surface of the synthetic quartz glass fixture which has been smoothed is a used jig or a contamination during manufacture. With. 如申請專利範圍第1項或第2項所記載之合成石英玻璃治具之處理方法，其中，將合成石英玻璃治具，在被石英玻璃所包圍的容器中，進行加熱處理。The method for treating a synthetic quartz glass jig according to the first or second aspect of the invention, wherein the synthetic quartz glass jig is subjected to heat treatment in a container surrounded by quartz glass.
TW97147429A 2007-12-05 2008-12-05 Synthetic quartz glass fixture treatment method and the synthesis of synthetic quartz glass fixture and its use TWI391340B (en)

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JPH10114532A (en) * 1996-10-04 1998-05-06 Toshiba Ceramics Co Ltd Production of jig for heat-treating quartz-glass semiconductor

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JPH10114532A (en) * 1996-10-04 1998-05-06 Toshiba Ceramics Co Ltd Production of jig for heat-treating quartz-glass semiconductor

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