TWI388529B - Near-infrared absorbing filter - Google Patents
Near-infrared absorbing filter Download PDFInfo
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- TWI388529B TWI388529B TW096142229A TW96142229A TWI388529B TW I388529 B TWI388529 B TW I388529B TW 096142229 A TW096142229 A TW 096142229A TW 96142229 A TW96142229 A TW 96142229A TW I388529 B TWI388529 B TW I388529B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/4809—Loop shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Description
本發明係有關於一種吸收式近紅外線濾光玻璃(near－infrared absorbing filter)。The present invention relates to an absorption-near-infrared absorbing filter.
由於數位影像產品例如數位攝影機以及照相機中影像模組所使用的影像感測元件(例如CMOS影像感測晶片或CCD影像感測晶片)的光波靈敏性(spectral sensitivity)係由可見光至近紅外線(共1,100 nm)。因此，一般會使用可吸收近紅外線的濾光玻璃來得到近似人類可見光靈敏性(visible sensitivity)的色像。此外，由於數位影像產品(如車用影像系統)有可能在極惡劣的環境下使用，影像感應器封裝構造必須經過極惡劣高溫高濕環境測試85℃/85%RH 500小時的連續測試。The optical sensitivity of image sensing components (such as CMOS image sensing wafers or CCD image sensing wafers) used in digital imaging products such as digital cameras and image modules in cameras ranges from visible light to near infrared light (total 1,100). Nm). Therefore, a filter glass that absorbs near-infrared rays is generally used to obtain a color image that approximates human visible light sensitivity. In addition, since digital imaging products (such as automotive imaging systems) are likely to be used in extremely harsh environments, image sensor package construction must be tested in 85 ° C / 85% RH for 500 hours in a very harsh high temperature and high humidity environment.
傳統影像感測器封裝構造使用之封裝玻璃並無濾除700nm~1100nm近紅外線之功能，所以須在鏡頭模組上加裝一片反射式近紅外線濾光玻璃，以有效阻隔紅外線，避免影像感測元件發生色偏、發熱及雜訊之現象。The package glass used in the traditional image sensor package structure does not filter the near-infrared function of 700nm~1100nm. Therefore, a reflective near-infrared filter glass must be added to the lens module to effectively block infrared rays and avoid image sensing. The component has color shift, heat and noise.
第1圖所示為一習用之影像感測器封裝構造100，其包含一基板110、一影像感測元件120、一鏡頭模組130、一外殼(Housing)140以及一透明封裝玻璃150。該影像感測元件120係以打線結合方式，電性連接於該基板110上。該鏡頭模組130設有透鏡132以及反射式近紅外線濾光玻璃134。FIG. 1 shows a conventional image sensor package structure 100 including a substrate 110, an image sensing component 120, a lens module 130, a housing 140, and a transparent package glass 150. The image sensing device 120 is electrically connected to the substrate 110 by wire bonding. The lens module 130 is provided with a lens 132 and a reflective near-infrared filter glass 134.
第2圖所示為另一習用之影像感測器封裝構造200，其包含一基板210、一影像感測元件220、一設有透鏡232以及反射式近紅外線濾光玻璃234之鏡頭模組、一外殼(Housing)(未示於圖中)以及一透明封裝玻璃250。該影像感測元件220係以打線結合方式，電性連接於該基板210上。FIG. 2 shows another conventional image sensor package structure 200 including a substrate 210, an image sensing component 220, a lens module provided with a lens 232 and a reflective near-infrared filter glass 234, A housing (not shown) and a transparent encapsulating glass 250. The image sensing device 220 is electrically connected to the substrate 210 by wire bonding.
隨著近年數位攝影機以及照相機輕薄短小的趨勢，影像感測器封裝構造需要降低高度(Z－height)，當模組越短小，光源的入射角度相對趨大，當光源入射角0°~30°時，中心波長偏移量必須小於5nm，方可避免影像感測器超過其白平衡極限，而產生嚴重之色偏現象，此一光學要求已超過習用反射式濾光玻璃之物理極限。此外，反射式近紅外線濾光玻璃容易造成光暈及多次成像(鬼影)之影像瑕疵。With the trend of digital cameras and cameras in recent years, the image sensor package structure needs to reduce the height (Z-height). When the module is shorter, the incident angle of the light source is relatively larger, when the light source incident angle is 0°~30. ° °, the central wavelength shift must be less than 5nm, in order to avoid the image sensor beyond its white balance limit, resulting in a serious color shift phenomenon, this optical requirement has exceeded the physical limit of the conventional reflective filter glass. In addition, reflective near-infrared filter glass is prone to halo and multiple imaging (ghosting) images.
由前所述，目前使用中的裝置有明顯的缺點及/或限制。因此，該領域所用之先前技術仍有待改良。From the foregoing, devices currently in use have significant disadvantages and/or limitations. Therefore, the prior art used in this field remains to be improved.
本發明之目的在於提供一種吸收式近紅外線濾光玻璃，其可耐惡劣之高溫高濕環境。It is an object of the present invention to provide an absorption type near-infrared filter glass which is resistant to harsh high temperature and high humidity environments.
本發明之另一目的在於提供一種吸收式近紅外線濾光玻璃，其可用於影像感測封裝構造取代反射式近紅外線濾光玻璃。Another object of the present invention is to provide an absorption type near-infrared filter glass which can be used in an image sensing package structure instead of a reflective near-infrared filter glass.
本發明之吸收式近紅外線濾光玻璃具有一玻璃基材，其係藉由熔融一原料組成物以及冷卻該熔融後之原料組成物而形成，該原料組成物主要包含40~75%之P2 O5 、10~28%之Al2 O3 以及3~8.5%之CuO，其中P2 O5 與Al2 O3 兩者佔該原料組成物的70%以上。本發明之%係指重量百分比。The absorption near-infrared ray filter glass of the present invention has a glass substrate formed by melting a raw material composition and cooling the molten raw material composition, the raw material composition mainly comprising 40 to 75% of P 2 O 5 , 10 to 28% of Al 2 O 3 and 3 to 8.5% of CuO, wherein both P 2 O 5 and Al 2 O 3 account for more than 70% of the raw material composition. % by weight of the invention means percentage by weight.
本發明之玻璃原料組成物可另包含0~5%之B2 O3 ，以增進玻璃穩定性與化學抗性。此外，本發明之玻璃原料組成物可另包含總含量1~20%之SiO2 、MgO、CaO、K2 O、BaO、Li2 O、Nb2 O5 或ZnO，其對於燒結時的熔融性以及失透性的改善很有效。The glass raw material composition of the present invention may further comprise 0 to 5% of B 2 O 3 to enhance glass stability and chemical resistance. Further, the glass raw material composition of the present invention may further comprise SiO 2 , MgO, CaO, K 2 O, BaO, Li 2 O, Nb 2 O 5 or ZnO in a total content of 1 to 20%, which is meltable for sintering. And the improvement of devitrification is very effective.
在0.4~0.2mm的厚度限制條件下，本發明之吸收式近紅外線濾光玻璃在波長400~500nm間之穿透率可達80~90%以上，中心波長(穿透率50%)可控制在600nm~650nm間之任何波段，且750nm~1100nm平均穿透率<3%。Under the thickness limitation of 0.4~0.2mm, the absorption rate of the absorption near-infrared filter glass of the present invention can reach 80-90% or more at a wavelength of 400-500 nm, and the center wavelength (transmission rate 50%) can be controlled. In any band between 600 nm and 650 nm, and the average transmittance of 750 nm to 1100 nm is <3%.
本發明之吸收式近紅外線濾光玻璃若因光學設計之要求可有一抗反射膜層設於該玻璃基材上。The absorption type near-infrared filter glass of the present invention may have an anti-reflection film layer disposed on the glass substrate if required for optical design.
本發明吸收式近紅外線濾光玻璃耐候性佳，經過85℃ 85%RH恆溫恆溼連續測試500小時後，表面皆無粗糙化及霧化的現象。此外，當光源入射角度達30°時，本發明之吸收式近紅外線濾光玻璃中心波長偏移量小於5nm，因此可精準掌控影像感測元件所接受之光源，而使其呈現出穩定以及不失真之色像。The absorption type near-infrared filter glass of the invention has good weather resistance, and after 500 hours of continuous testing at 85 ° C 85% RH constant temperature and humidity, the surface has no roughening and atomization phenomenon. In addition, when the incident angle of the light source reaches 30°, the center wavelength shift of the absorption near-infrared filter glass of the present invention is less than 5 nm, so that the light source received by the image sensing component can be accurately controlled, so that it is stable and not Distorted color image.
因此，本發明之吸收式近紅外線濾光玻璃可用於影像感測封裝構造取代習用的反射式近紅外線濾光玻璃Therefore, the absorption near-infrared filter glass of the present invention can be used in an image sensing package structure instead of the conventional reflective near-infrared filter glass.
以下將參照圖式作詳細說明如後，以更完整的了解本發明所有前述之操作原理及優點。DETAILED DESCRIPTION OF THE INVENTION All of the foregoing operational principles and advantages of the present invention will be more fully understood from the following description.
本發明之吸收式近紅外線濾光玻璃具有一玻璃基材，其係藉由熔融一原料組成物以及冷卻該熔融後之原料組成物而形成，該原料組成物主要包含40~75%之P2 O5 、10~28%之Al2 O3 以及3~8.5%之CuO，其中P2 O5 與Al2 O3 兩者佔該原料組成物的70%以上。本發明之%係指重量百分比。該原料組成物的成分及含量限定之理由係描述於下。The absorption near-infrared ray filter glass of the present invention has a glass substrate formed by melting a raw material composition and cooling the molten raw material composition, the raw material composition mainly comprising 40 to 75% of P 2 O 5 , 10 to 28% of Al 2 O 3 and 3 to 8.5% of CuO, wherein both P 2 O 5 and Al 2 O 3 account for more than 70% of the raw material composition. % by weight of the invention means percentage by weight. The reason why the composition and content of the raw material composition are limited is described below.
P2 O5 為磷酸鹽玻璃的基本成分，並且是紅外線吸收的主要成分。如果P2 O5 未滿40%就會發生無法達到良好的吸收近紅外線，所以P2 O5 下限是40%，較佳為45%。另一方面，若P2 O5 超過75%的話，玻璃在燒結的過程中會因為黏度過高而產生揮發太過於激烈而導致燒結困難的問題發生，因此上限為75%，較佳為70%。P 2 O 5 is an essential component of phosphate glass and is a main component of infrared absorption. If P 2 O 5 is less than 40%, a good absorption of near infrared rays cannot be achieved, so the lower limit of P 2 O 5 is 40%, preferably 45%. On the other hand, if P 2 O 5 exceeds 75%, the glass will be too violent due to excessive viscosity during sintering, resulting in difficulty in sintering, so the upper limit is 75%, preferably 70%. .
Al2 O3 是改善耐久性(耐候性)非常有效的成分，可是若不滿10%就無法顯現出來，若超過28%就會發生熔融困難的現象而產生失透性的問題，所以下限是10%，較佳為13%，上限是28%，較佳為20%。P2 O5 與Al2 O3 兩者總含量為70%以上時，可得到具有高穿透率以及良好的近紅外線吸收效果的濾光玻璃。Al 2 O 3 is a very effective component for improving durability (weather resistance), but if it is less than 10%, it will not be revealed. If it exceeds 28%, melting is difficult and devitrification occurs. Therefore, the lower limit is 10 %, preferably 13%, and the upper limit is 28%, preferably 20%. When the total content of both P 2 O 5 and Al 2 O 3 is 70% or more, a filter glass having high transmittance and good near-infrared absorption effect can be obtained.
CuO對於阻隔近紅外線的效果是非常好的，但是若含量低於3%(較佳不低於3.5%)，那阻隔效果就非常低了，但若超過8.5%(較佳不超過7%)就會產生讓可見光的穿透變低的問題產生。CuO is very good for blocking near-infrared rays, but if the content is less than 3% (preferably not less than 3.5%), the barrier effect is very low, but if it exceeds 8.5% (preferably does not exceed 7%) There is a problem that the penetration of visible light becomes low.
現代影像模組的設計明顯趨向輕薄短小，因此較佳可以降低濾光玻璃之厚度。本案發明人經一系列研究後發現，當玻璃厚度限定在0.55 mm~0.1 mm(較佳為0.4 mm~0.2 mm)時，只有CuO含量在3%~8.5%之間並且與P2 O5 含量在40%~75%之間的良好搭配，才能得到具有良好的穿透(400~500nm穿透率>80~90%以上)及吸收(750nm~1100nm平均穿透率<3%)之濾光玻璃。The design of modern image modules tends to be light, thin and short, so it is better to reduce the thickness of the filter glass. After a series of studies, the inventors of the present invention found that when the thickness of the glass is limited to 0.55 mm~0.1 mm (preferably 0.4 mm~0.2 mm), only the CuO content is between 3% and 8.5% and the content of P 2 O 5 is In a good match between 40% and 75%, it is possible to obtain a filter with good penetration (400~500nm transmittance >80~90%) and absorption (750nm~1100nm average transmittance <3%). glass.
本發明之玻璃原料組成物可另包含0~5%之B2 O3 。B2 O3 可增進玻璃穩定性與化學抗性，因此可以存在於本發明之濾光玻璃中。The glass raw material composition of the present invention may further comprise 0 to 5% of B 2 O 3 . B 2 O 3 can enhance glass stability and chemical resistance and thus can be present in the filter glass of the present invention.
本發明之玻璃原料組成物可另包含SiO2 、MgO、CaO、K2 O、BaO、Li2 O、Nb2 O5 或ZnO，其對於燒結時的熔融性以及失透性的改善很有效。若前述氧化物總含量低於1%，那熔溶性以及失透性的改善效果不佳，但若總含量超過20 wt%的話對於耐久性會產生惡化，穿透率也會降低。The glass raw material composition of the present invention may further contain SiO 2 , MgO, CaO, K 2 O, BaO, Li 2 O, Nb 2 O 5 or ZnO, which is effective for improving the meltability and devitrification at the time of sintering. If the total content of the above oxide is less than 1%, the effect of improving melt solubility and devitrification is not good, but if the total content exceeds 20% by weight, the durability is deteriorated and the transmittance is also lowered.
此外，為了得到較佳的熔融性以及失透性的改善效果並且不影響其耐久性以及不讓穿透率惡化，P2 O5 、Al2 O3 、SiO2 、MgO、CaO、K2 O、BaO、Li2 O、Nb2 O5 以及ZnO的總含量至少為85%，較佳為90%以上。In addition, P 2 O 5 , Al 2 O 3 , SiO 2 , MgO, CaO, K 2 O are obtained in order to obtain better meltability and improvement in devitrification without affecting durability and deterioration of penetration. The total content of BaO, Li 2 O, Nb 2 O 5 and ZnO is at least 85%, preferably 90% or more.
可以理解的是，可以水溶性、碳酸鹽、硝酸鹽、酸化物等型態的原料形成前述之玻璃原料組成物，但是以不純物來說，為了不影響400nm~600nm的可見光穿透率，最好使用含鐵量小於0.02%以下的原料來製作玻璃。It can be understood that the raw materials of the water-soluble, carbonate, nitrate, acidate and the like can be formed into the above-mentioned glass raw material composition, but in terms of impurities, in order not to affect the visible light transmittance of 400 nm to 600 nm, it is preferable. The glass is produced using a raw material having an iron content of less than 0.02%.
本發明之吸收式近紅外線濾光玻璃若具有一抗反射膜層設於該玻璃基材上則該抗反射膜層係用以將基材本身之反射率降至最低，以有效控制可見光之最大穿透。本發明吸收式近紅外線濾光玻璃具有穩定之低反射率特性，400nm~680nm平均低於0.3%絕對值最高不超過0.8%，680nm~700nm平均低於2%，絕對值最高不超過3%，運用在影像感測封裝構造及其應用產品，可有效改善光暈及二次顯像(鬼影)之現象，提高影像品質。If the absorption near-infrared filter glass of the present invention has an anti-reflection film layer disposed on the glass substrate, the anti-reflection film layer is used to minimize the reflectance of the substrate itself to effectively control the maximum visible light. penetrate. The absorption type near-infrared filter glass of the invention has stable low reflectivity characteristics, and the average value of 400 nm to 680 nm is less than 0.3%, the absolute value is not more than 0.8%, the average value of 680 nm to 700 nm is less than 2%, and the absolute value is not more than 3%. It can effectively improve the phenomenon of halo and secondary development (ghosting) and improve image quality by using image sensing package structure and its application products.
適用於本發明之抗反射膜層可以是一單層透明金屬氧化膜層(例如Nb2 O5 (折射係數2.375)或SiO2 (折射係數1.48))，或是多層抗反射金屬氧化膜層(一般在高真空的環境下係藉由兩種高純度之金屬(例如Nb以及Si)利用離子助鍍使成完全氧化膜並堆疊於一基材上而製得)。本發明之吸收式近紅外線濾光玻璃可用於影像感測封裝構造取代習用的反射式近紅外線濾光玻璃。The antireflection film layer suitable for use in the present invention may be a single transparent metal oxide film layer (for example, Nb 2 O 5 (refractive index 2.375) or SiO 2 (refractive index 1.48)), or a multilayer antireflective metal oxide film layer ( Generally, in a high vacuum environment, two high-purity metals (such as Nb and Si) are formed by ion-assisted plating to form a complete oxide film and stacked on a substrate. The absorption near-infrared filter glass of the present invention can be used in an image sensing package structure instead of the conventional reflective near-infrared filter glass.
第3圖所示為根據本發明一實施例之影像感測器封裝構造300，其主要包含一基板110、一影像感測元件120、一設有透鏡132之鏡頭模組310，一外殼(Housing)140以及一吸收式近紅外線濾光玻璃320。該影像感測元件120係以打線結合方式，電性連接於該基板110上。該外殼140係黏著於該基板120上，用以接合該鏡頭模組310並且承載該吸收式近紅外線濾光玻璃320。當光線穿越該透鏡132及該濾光玻璃320，而照射於該影像感測元件120上時，該影像感測元件120會將光線轉換成電氣訊號。3 is an image sensor package structure 300 according to an embodiment of the invention, which mainly includes a substrate 110, an image sensing component 120, a lens module 310 with a lens 132, and a housing (Housing). And an absorption type near infrared ray filter glass 320. The image sensing device 120 is electrically connected to the substrate 110 by wire bonding. The outer casing 140 is adhered to the substrate 120 for engaging the lens module 310 and carrying the absorption near-infrared filter glass 320. When the light passes through the lens 132 and the filter glass 320 and is incident on the image sensing component 120, the image sensing component 120 converts the light into an electrical signal.
第4圖所示為根據本發明一實施例之影像感測器封裝構造400，其主要包含一基板210、一影像感測元件220、一設有透鏡232之鏡頭模組，一外殼(Housing)(未示於圖中)以及一吸收式近紅外線濾光玻璃320。該影像感測元件220係以打線結合方式，電性連接於該基板210上。本發明之吸收式近紅外線濾光玻璃320可藉由一密封劑(未示於圖中)黏著於該晶影像感測元件220上。該密封劑可為一熱硬化接著劑。4 is an image sensor package structure 400 according to an embodiment of the invention, which mainly includes a substrate 210, an image sensing component 220, a lens module provided with a lens 232, and a housing. (not shown) and an absorption near-infrared filter glass 320. The image sensing device 220 is electrically connected to the substrate 210 by wire bonding. The absorption near-infrared filter glass 320 of the present invention can be adhered to the crystal image sensing element 220 by a sealant (not shown). The sealant can be a heat hardening adhesive.
可以理解的是，本發明之吸收式近紅外線濾光玻璃不僅取代習用之反射式近紅外線濾光玻璃，亦取代習用之透明封裝玻璃，因此可大幅將低封裝構造之高度(Z－height)。It can be understood that the absorption near-infrared filter glass of the present invention not only replaces the conventional reflective near-infrared filter glass, but also replaces the conventional transparent package glass, so that the height of the low-package structure can be greatly increased (Z-height).
將P2 O5 、Al2 O3 、B2 O3 、SiO2 、MgO、CaO、K2 O、BaO、Li2 O、ZnO、CuO以及Nb2 O5 分別秤重以獲得如表一所示重量百分比成分之原料組成物。將個別原料組成物(編號1至6)在10公升的SiO2 坩堝中以1250℃經過5個小時的粗溶解後，注入金屬模具，得到所需要的碎玻璃後，再將碎玻璃置於白金坩堝中，在1250℃的電器爐中經過10個小時精製，接著注入指定的石墨盒中。再經過48個小時精密控溫下使溫度降至常溫以避免玻璃產生應力，在切割、研磨、拋光後得0.3 mm厚度之玻璃基材(其中編號2之原料組成物所製得的玻璃基材特性列於表二與表三)。將玻璃基材鍍上抗反射膜層後製得個別的吸收式近紅外線濾光玻璃樣品，其目視觀察為藍色，其使用分光儀測得的光譜如第1圖所示，所有的濾光玻璃樣品在400nm之穿透率(T)，中心波長(T50%)以及光吸收峰(Peak)列於表四。P 2 O 5 , Al 2 O 3 , B 2 O 3 , SiO 2 , MgO, CaO, K 2 O, BaO, Li 2 O, ZnO, CuO, and Nb 2 O 5 were weighed separately to obtain Table 1 The raw material composition of the weight percentage component is shown. The individual raw material compositions (Nos. 1 to 6) were roughly dissolved in 10 liters of SiO 2 crucible at 1250 ° C for 5 hours, and then poured into a metal mold to obtain a desired cullet, and then the cullet was placed in platinum. In the crucible, it was refined in an electric furnace at 1250 ° C for 10 hours, and then poured into a designated graphite box. After 48 hours of precise temperature control, the temperature is lowered to normal temperature to avoid stress on the glass. After cutting, grinding and polishing, a glass substrate having a thickness of 0.3 mm (the glass substrate prepared by the raw material composition of No. 2) is obtained. The characteristics are listed in Tables 2 and 3). The glass substrate is coated with an anti-reflection film layer to prepare individual absorption type near-infrared filter glass samples, which are visually observed as blue, and the spectrum measured by the spectrometer is as shown in FIG. 1 , and all the filters are filtered. The transmittance (T) of the glass sample at 400 nm, the center wavelength (T50%), and the light absorption peak (Peak) are listed in Table 4.
由第5圖以及表四可知，本發明之吸收式近紅外線濾光玻璃(厚度0.3mm)在波長400~500nm間之穿透率可達80~90%以上，中心波長(T50%)可控制在600nm~650nm間之任何波段，且750nm~1100nm平均穿透率<3%。As can be seen from Fig. 5 and Table 4, the absorption near-infrared filter glass (thickness 0.3 mm) of the present invention has a transmittance of 80 to 90% or more at a wavelength of 400 to 500 nm, and the center wavelength (T50%) can be controlled. In any band between 600 nm and 650 nm, and the average transmittance of 750 nm to 1100 nm is <3%.
此外，經由恆溫恆溼機使用指定的溫溼度(85℃ 85%RH)連續測試500小時後，所有的吸收式近紅外線濾光玻璃樣品表面皆無粗糙化及霧化的現象。In addition, after 500 hours of continuous testing using a constant temperature and humidity machine using the specified temperature and humidity (85 ° C 85% RH), the surface of all the absorption near-infrared filter glass samples was free from roughening and fogging.
雖然本發明已以其特定較佳的版本詳細描述，然而其它的版本還是可能。因此申請專利範圍並不受限於在此所述之較佳版本。Although the invention has been described in detail in its particular preferred version, other versions are possible. Therefore, the scope of patent application is not limited to the preferred versions described herein.
100．．．影像感測器封裝構造100. . . Image sensor package construction
110．．．基板110. . . Substrate
120．．．影像感測元件120. . . Image sensing component
130．．．鏡頭模組130. . . Lens module
132．．．透鏡132. . . lens
134．．．反射式近紅外線濾光玻璃134. . . Reflective near-infrared filter glass
140．．．外殼140. . . shell
150．．．透明封裝玻璃150. . . Transparent package glass
200．．．影像感測器封裝構造200. . . Image sensor package construction
210．．．基板210. . . Substrate
220．．．影像感測元件220. . . Image sensing component
230．．．鏡頭模組230. . . Lens module
232．．．透鏡232. . . lens
234．．．反射式近紅外線濾光玻璃234. . . Reflective near-infrared filter glass
250．．．透明封裝玻璃250. . . Transparent package glass
300．．．影像感測器封裝構造300. . . Image sensor package construction
310．．．鏡頭模組310. . . Lens module
320．．．吸收式近紅外線濾光玻璃320. . . Absorbing near-infrared filter glass
第1圖為習用影像感測器封裝構造之剖示圖。Fig. 1 is a cross-sectional view showing a package structure of a conventional image sensor.
第2圖為另一習用影像感測器封裝構造之部分剖示圖。FIG. 2 is a partial cross-sectional view showing another conventional image sensor package structure.
第3圖為根據本發明一實施例之影像感測器封裝構造之剖示圖。3 is a cross-sectional view showing a package structure of an image sensor according to an embodiment of the present invention.
第4圖為根據本發明另一實施例之影像感測器封裝構造之部分剖示圖。4 is a partial cross-sectional view showing a package structure of an image sensor according to another embodiment of the present invention.
第5圖為濾光玻璃樣品使用分光儀測得的穿透光譜。Figure 5 is a transmission spectrum of a filter glass sample measured using a spectrometer.
110．．．基板110. . . Substrate
120．．．影像感測元件120. . . Image sensing component
130．．．鏡頭模組130. . . Lens module
132．．．透鏡132. . . lens
140．．．外殼140. . . shell
300．．．影像感測器封裝構造300. . . Image sensor package construction
310．．．鏡頭模組310. . . Lens module
320．．．吸收式近紅外線濾光玻璃320. . . Absorbing near-infrared filter glass
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| KR102406293B1 (en) * | 2020-08-11 | 2022-06-10 | 에스씨플랫 주식회사 | Polishing Apparatus For Substrate Of Display Device |
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