TWI385831B - - Google Patents

Info

Publication number: TWI385831B
Authority: TW; Taiwan

Application number

TW98109726A

Other languages

Chinese (zh)

Other versions

TW201036203A (en

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2009-03-25

Filing date

2009-03-25

Publication date

2013-02-11

2009-03-25 Application filed filed Critical

2009-03-25 Priority to TW98109726A priority Critical patent/TW201036203A/en

2010-10-01 Publication of TW201036203A publication Critical patent/TW201036203A/en

2013-02-11 Application granted granted Critical

2013-02-11 Publication of TWI385831B publication Critical patent/TWI385831B/zh

Links

TW98109726A 2009-03-25 2009-03-25 GaN-series LED containing Mg-doped layer TW201036203A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
TW98109726A TW201036203A (en)	2009-03-25	2009-03-25	GaN-series LED containing Mg-doped layer

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
TW98109726A TW201036203A (en)	2009-03-25	2009-03-25	GaN-series LED containing Mg-doped layer

Publications (2)

Publication Number	Publication Date
TW201036203A TW201036203A (en)	2010-10-01
TWI385831B true TWI385831B (en)	2013-02-11

Family

ID=44856146

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW98109726A TW201036203A (en)	2009-03-25	2009-03-25	GaN-series LED containing Mg-doped layer

Country Status (1)

Country	Link
TW (1)	TW201036203A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW200620423A (en) *	2004-08-24	2006-06-16	Toshiba Kk	Semiconductor substrate and semiconductor device manufactured by epitaxial growth on the semiconductor substrate
TW200701579A (en) *	2005-04-01	2007-01-01	Sharp Kk	Method for manufacturing p type nitride semiconductor and semiconductor device manufactured by such method

2009
- 2009-03-25 TW TW98109726A patent/TW201036203A/en not_active IP Right Cessation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TW200620423A (en) *	2004-08-24	2006-06-16	Toshiba Kk	Semiconductor substrate and semiconductor device manufactured by epitaxial growth on the semiconductor substrate
TW200701579A (en) *	2005-04-01	2007-01-01	Sharp Kk	Method for manufacturing p type nitride semiconductor and semiconductor device manufactured by such method

Also Published As

Publication number	Publication date
TW201036203A (en)	2010-10-01

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Legal Events

Date	Code	Title	Description
2023-11-11	MM4A	Annulment or lapse of patent due to non-payment of fees