TWI384532B - 具導通孔的電子元件及薄膜電晶體元件的製造方法 - Google Patents
具導通孔的電子元件及薄膜電晶體元件的製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 32
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 22
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 9
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 9
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
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- 229910045601 alloy Inorganic materials 0.000 claims description 7
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
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- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims 5
- 230000000903 blocking effect Effects 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0023—Etching of the substrate by chemical or physical means by exposure and development of a photosensitive insulating layer
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
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- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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Description
本發明係有關於一種電子元件的製造方法,特別有關於一種具導通孔的電子元件及薄膜電晶體元件的製造方法。
傳統上,以黃光微影技術製作導具通孔的電子元件,包含使用對準曝光的方式,並藉由光罩定義導通孔的圖形,然而其缺點在於,設備及製程均耗費較高的成本。再者,於半導體封裝的絕緣膜製程中,傳統以雷射法形成導通孔為主流方法。雷射光會使絕緣層的樹脂燃燒而去除,因此除了尺寸解析度的極限約50微米(μm)外,其製作成本也較高。此外,其他新興的技術,例如以噴墨印刷法(Ink-jet printing)直接塗佈形成,其特點採用無光罩技術,只要在定義導通孔的位置噴印遮光材料,除簡化製程並減少材料的消耗之外,亦可大面積生產及可應用於捲帶式(roll-to-roll)製程,將大幅降低製程的成本。尤其是,噴墨印刷(Ink-jet printing)的優點為可製作墨滴控制型(Drop-on-demand)薄膜,亦即按照位置需求噴塗液滴,因此非常適合應用於捲帶式(roll-to-roll)製程。
美國專利第US 7,176,040號揭露一種以噴墨印刷方式噴印溶劑挖出導通孔的方法,藉由噴墨印刷法噴印溶劑在絕緣層上,溶解絕緣層形成開口並填入導體,以形成導通孔。然而上述方法的缺點為,導通孔的直徑會受到溶劑的
表面張力、溶劑與絕緣層的接觸角影響,而不易精確控制導通孔的尺寸。再者,溶劑亦可能對下層的結構造成損傷。導通孔的深度必須噴由噴印溶劑的數量來控制,且在溶解絕緣層的過程中,導通孔的邊緣會有咖啡環(coffee ring)的形成一具有高低差的擋牆,若擋牆高低差過大將不利於後續製程。導通孔的形狀也因為內外徑的差異而呈半球型。再者,無法用於製作高深寬比或更深的導通孔,使其應用受到限制。
有鑑於此,傳統利用噴印溶劑製作導通孔的方法,因其利用溶劑液滴的數量來控制挖孔的深度,對於導通孔直徑、深度及輪廓的控制能力較差,製程可靠度低。更有甚者,除了殘留溶劑移除的問題之外,也有傷害下層結構的問題有待克服。
本發明之實施例提供一種具導通孔的電子元件的製造方法,包括:提供一基底;形成一圖案化的下電極於該基底上;形成一感光性絕緣層於該基底上,且覆蓋該圖案化下電極;塗佈一圖案化遮光性材料於該感光性絕緣層上;施以一曝光步驟,使未被該圖案化遮光性材料遮擋住的該感光性絕緣層定型化;移除該圖案化遮光性材料及其下方部分的該感光性絕緣層,以形成一開口;以及形成一圖案化的上電極於該感光性絕緣層上,並填入該開口中,以形成一導通孔。
本發明之實施例亦提供一種薄膜電晶體元件的製造方
法,包括:提供一基底;形成一圖案化主動層於該基底上;形成圖案化的一第一電極於該主動層的兩側,做為該薄膜電晶體的源極/極極;形成一感光性絕緣層於該基底上,且覆蓋該圖案化的一第一電極和該主動層;塗佈一圖案化遮光性材料於該感光性絕緣層上,對應該源極/極極的位置;施以一曝光步驟,使未被該圖案化遮光性材料遮擋住的該感光性絕緣層定型化;移除該圖案化遮光性材料及其下方部分的該感光性絕緣層,以形成一開口;形成一第二電極於該感光性絕緣層上,對應該主動層的位置,做為該薄膜電晶體的一閘極;以及形成一圖案化的第三電極於該感光性絕緣層上,並填入該開口中,以形成一導通孔。
為使本發明能更明顯易懂,下文特舉實施例,並配合所附圖式,作詳細說明如下:
以下以各實施例詳細說明並伴隨著圖式說明之範例,做為本發明之參考依據。在圖式或說明書描述中,相似或相同之部分皆使用相同之圖號。且在圖式中,實施例之形狀或是厚度可擴大,並以簡化或是方便標示。再者,圖式中各元件之部分將以分別描述說明之,值得注意的是,圖中未繪示或描述之元件,為所屬技術領域中具有通常知識者所知的形式,另外,特定之實施例僅為揭示本發明使用之特定方式,其並非用以限定本發明。
本發明之實施例提供一種具有導通孔(Via Hole)的電
子元件的製程,首先,基底上的絕緣層是採用感光性材料。導通孔係以噴印遮光材料於感光材料上定義導通孔形成的位置,經黃光微影製程後完成導通孔圖案之定義,可匹配任何需要導通孔的電子元件結構,例如薄膜電晶體、印刷電路板等,以達到簡化製程與增加應用範圍之效果。
第1A至1F圖係顯示本發明之一實施例的導通孔(Via Hole)的電子元件的製造方法的各部分的剖面示意圖。請參閱第1A圖,首先,提供一基底10,包括玻璃、矽、金屬薄板、塑膠基板或其他可撓性軟性基板。於一實施例中,該塑膠基板材料例如是聚亞醯胺(polyimide,簡稱PI)、玻璃纖維板(簡稱FR4)、聚奈二甲酸二乙酯(Polyethylenenaphthalate,簡稱PEN)或聚對苯二甲酸乙二醇酯(polyethylene terephthalate,簡稱PET)等,但不限於上列結構之材料。
請參閱第1B圖,接著形成一圖案化的下電極12於該基底上。例如,將下部電極結構製作於該基底10上。形成下電極12的方法可為電鍍法、濺鍍(sputtering)法、印刷(printing)法或上述方法之任意組合。下電極膜層可為金屬材料或溶液型導電材料,其中該金屬材料係選自金(gold)、銀(silver)、銅(copper)、鋁(aluminum)或上述金屬任意組成之合金。另一方面,該溶液型導電材料係選自導電高分子溶液墨水或噴印式電極材料溶液墨水,例如聚-3,4-二氧乙基噻吩(poly-3,4-ethylenedioxythiophene,簡稱PEDOT)或銀奈米膠。
請參閱第1C圖,接著,形成一感光性絕緣層14於該基底10上,且覆蓋該圖案化下電極12。該感光性絕緣層14可為一正型光阻與一負型光阻。
請參閱第1D圖,塗佈一圖案化遮光性材料16於該感光性絕緣層14上,並施以一曝光步驟L,使未被該圖案化遮光性材料遮擋住的該感光性絕緣層定型化。例如,以噴印的方式製作遮光材料16於感光性絕緣層14上,並以位於該感光性絕緣層14之第二面312之一側向該第一面311方向行進的光對感光性絕緣層進行曝光。應注意的是,該遮光材料可為具阻擋UV光性質的材料。再者,該遮光材料可為一含銀的金屬。
請參閱第1E圖,移除該圖案化遮光性材料16及其下方部分的該感光性絕緣層14,以形成一開口18。接著,形成一圖案化的上電極20於該感光性絕緣層14上,並填入該開口18中,以形成一導通孔,如第1F圖所示。該上電極20可由一金屬材料或一溶液型導電材料所構成,該金屬材料為金(Au)、銀(Ag)、銅(Cu)、鋁(Au)或或上述金屬之任意組合之合金,以及其中該溶液型導電材料為聚-3,4-二氧乙基噻吩(PEDOT)或銀奈米膠。
第2A至2B圖係顯示本發明另一實施例的導通孔的薄膜電晶體的製造方法的各部分的剖面示意圖。請參閱第2A圖,提供一基底50,例如一玻璃基板、一矽基板、一塑膠基板或一具可撓性的軟性基板。上述塑膠基板可為一聚亞醯胺(PI)基板、一玻璃纖維(FR4)基板、一聚奈二甲酸二乙
酯(PEN)基板或一聚對苯二甲酸乙二醇酯(PET)基板。
接著,形成一圖案化主動層52於該基底50上。該主動層52為一無機半導體、一氧化物半導體或一有機半導體。該無機半導體可為a-Si、poly-Si或LTPS,且該氧化物半導體可為ZnO或a-IGZO。再者,該有機半導體為P-型,其包括P3HT、F8T2。應注意的是,該有機半導體為N-型,其包括PCBM,或一含氟改質之有機半導體材料。
接著,形成圖案化的一第一電極54於該主動層52的兩側,做為該薄膜電晶體的源極/極極。根據本發明之一實施例,該第一電極54是由一金屬材料或一溶液型導電材料所構成,其中該金屬材料為金(Au)、銀(Ag)、銅(Cu)、鋁(Au)或或上述金屬之任意組合之合金,以及該溶液型導電材料為聚-3,4-二氧乙基噻吩(PEDOT)或銀奈米膠。
接著,形成一感光性絕緣層56於該基底上,且覆蓋該圖案化的一第一電極54和該主動層52。該感光性絕緣層包括一正型光阻與一負型光阻。塗佈一圖案化遮光性材料58於該感光性絕緣層56上,對應該源極/極極的位置,並施以一曝光步驟L,使未被該圖案化遮光性材料遮擋住的該感光性絕緣層定型化。應注意的是,該遮光材料可為具阻擋UV光性質的材料。更明確地說,該遮光材料可為一含銀的金屬。
請參閱第2B圖,移除該圖案化遮光性材料58及其下方部分的該感光性絕緣層56,以形成一開口。接著,形成一第二電極60於該感光性絕緣層上,對應該主動層的位
置,做為該薄膜電晶體的一閘極,以及形成一圖案化的第三電極62、64於該感光性絕緣層上,並填入該開口中,以形成一導通孔,分別與該薄膜電晶體的源極/極極電性接觸。應注意的是,該第二和第三電極可由一金屬材料或一溶液型導電材料所構成,其中該金屬材料為金(Au)、銀(Ag)、銅(Cu)、鋁(Au)或或上述金屬之任意組合之合金,且該溶液型導電材料為聚-3,4-二氧乙基噻吩(PEDOT)或銀奈米膠。
第3圖係顯示根據本發明另一實施例具導通孔的金屬-絕緣-金屬(MIM)結構的電流-電壓特性曲線的示意圖。於第3圖中,利用此噴印方式定義導通孔於MIM結構(Al-Insulator-Al)中,由其電流-電壓(I-V)曲線得知,其具有良率高的導通孔(如曲線B、C、D、E),量測電阻約50 Ω,而無導通孔的結構無法量測出I-V電性,如曲線A所示。
本發明各實施例的主要特徵及優點在於利用無光罩技術之概念,直接利用噴墨印刷的方式,噴印遮光材料於感光性材料上作為光罩,使得遮光材料在絕緣層上的直徑即為導通孔之直徑,且絕緣層厚度也不影響導通孔半徑,製程良率及穩定性高。導通孔的形狀輪廓無內外徑之差異,有利於後續製程之階梯覆蓋。本發明各實施例具有大面積生產之優勢,更可應用於連續式捲帶製程(roll-to-roll)生產。
本發明雖以較佳實施例揭露如上,然其並非用以限定
本發明的範圍,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可做些許的更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10‧‧‧基底
12‧‧‧圖案化的下電極
14‧‧‧感光性絕緣層
311‧‧‧感光性絕緣層之第一面
312‧‧‧感光性絕緣層之第二面
16‧‧‧遮光材料
18‧‧‧開口
20‧‧‧上電極
50‧‧‧基底
52‧‧‧圖案化主動層
54‧‧‧圖案化第一電極
56‧‧‧感光性絕緣層
58‧‧‧圖案化遮光性材料
60‧‧‧第二電極
62、64‧‧‧第三電極
L‧‧‧曝光步驟
第1A至1F圖係顯示本發明之一實施例的導通孔(Via Hole)的電子元件的製造方法的各部分的剖面示意圖;第2A至2B圖係顯示本發明另一實施例的導通孔的薄膜電晶體的製造方法的各部分的剖面示意圖;以及第3圖係顯示根據本發明另一實施例具導通孔的金屬-絕緣-金屬(MIM)結構的電流-電壓特性曲線的示意圖。
50‧‧‧基底
52‧‧‧圖案化主動層
54‧‧‧圖案化第一電極
56‧‧‧感光性絕緣層
58‧‧‧圖案化遮光性材料
L‧‧‧曝光步驟
Claims (32)
- 一種具導通孔的電子元件的製造方法,包括:提供一基底;形成一圖案化的下電極於該基底上;形成一感光性絕緣層於該基底上,且覆蓋該圖案化下電極;塗佈一圖案化遮光性材料於該感光性絕緣層上;施以一曝光步驟,使未被該圖案化遮光性材料遮擋住的該感光性絕緣層定型化;移除該圖案化遮光性材料及其下方部分的該感光性絕緣層,以形成一開口;以及形成一圖案化的上電極於該感光性絕緣層上,並填入該開口中,以形成一導通孔。
- 如申請專利範圍第1項所述之具導通孔的電子元件的製造方法,其中該基底包括一玻璃基板、一矽基板、一塑膠基板或一具可撓性的軟性基板。
- 如申請專利範圍第2項所述之具導通孔的電子元件的製造方法,其中該塑膠基板為一聚亞醯胺(PI)基板、一玻璃纖維(FR4)基板、一聚奈二甲酸二乙酯(PEN)基板或一聚對苯二甲酸乙二醇酯(PET)基板。
- 如申請專利範圍第1項所述之具導通孔的電子元件的製造方法,其中該下電極是由一金屬材料或一溶液型導電材料所構成。
- 如申請專利範圍第4項所述之具導通孔的電子元件 的製造方法,其中該金屬材料為金(Au)、銀(Ag)、銅(Cu)、鋁(Au)或或上述金屬之任意組合之合金。
- 如申請專利範圍第4項所述之具導通孔的電子元件的製造方法,其中該溶液型導電材料為聚-3,4-二氧乙基噻吩(PEDOT)或銀奈米膠。
- 如申請專利範圍第1項所述之具導通孔的電子元件的製造方法,其中該感光性絕緣層包括一正型光阻與一負型光阻。
- 如申請專利範圍第1項所述之具導通孔的電子元件的製造方法,其中該遮光材料為具阻擋UV光性質的材料。
- 如申請專利範圍第8項所述之具導通孔的電子元件的製造方法,其中該遮光材料為一含銀的金屬。
- 如申請專利範圍第1項所述之具導通孔的電子元件的製造方法,其中該上電極是由一金屬材料或一溶液型導電材料所構成。
- 如申請專利範圍第10項所述之具導通孔的電子元件的製造方法,其中該金屬材料為金(Au)、銀(Ag)、銅(Cu)、鋁(Au)或或上述金屬之任意組合之合金。
- 如申請專利範圍第10項所述之具導通孔的電子元件的製造方法,其中該溶液型導電材料為聚-3,4-二氧乙基噻吩(PEDOT)或銀奈米膠。
- 一種薄膜電晶體元件的製造方法,包括:提供一基底;形成一圖案化主動層於該基底上; 形成圖案化的一第一電極於該主動層的兩側,做為該薄膜電晶體的源極/極極;形成一感光性絕緣層於該基底上,且覆蓋該圖案化的一第一電極和該主動層;塗佈一圖案化遮光性材料於該感光性絕緣層上,對應該源極/極極的位置;施以一曝光步驟,使未被該圖案化遮光性材料遮擋住的該感光性絕緣層定型化;移除該圖案化遮光性材料及其下方部分的該感光性絕緣層,以形成一開口;形成一第二電極於該感光性絕緣層上,對應該主動層的位置,做為該薄膜電晶體的一閘極;以及形成一圖案化的第三電極於該感光性絕緣層上,並填入該開口中,以形成一導通孔。
- 如申請專利範圍第13項所述之薄膜電晶體元件的製造方法,其中該基底包括一玻璃基板、一矽基板、一塑膠基板或一具可撓性的軟性基板。
- 如申請專利範圍第14項所述之薄膜電晶體元件的製造方法,其中該塑膠基板為一聚亞醯胺(PI)基板、一玻璃纖維(FR4)基板、一聚奈二甲酸二乙酯(PEN)基板或一聚對苯二甲酸乙二醇酯(PET)基板。
- 如申請專利範圍第13項所述之薄膜電晶體元件的製造方法,其中該主動層為一無機半導體、一氧化物半導體或一有機半導體。
- 如申請專利範圍第16項所述之薄膜電晶體元件的製造方法,其中該無機半導體為a-Si、poly-Si或LTPS。
- 如申請專利範圍第16項所述之薄膜電晶體元件的製造方法,其中該氧化物半導體為ZnO或a-IGZO。
- 如申請專利範圍第16項所述之薄膜電晶體元件的製造方法,其中該有機半導體為P-型,其包括P3HT、F8T2。
- 如申請專利範圍第16項所述之薄膜電晶體元件的製造方法,其中該有機半導體為N-型,其包括PCBM,或一含氟改質之有機半導體材料。
- 如申請專利範圍第13項所述之薄膜電晶體元件的製造方法,其中該第一電極是由一金屬材料或一溶液型導電材料所構成。
- 如申請專利範圍第21項所述之薄膜電晶體元件的製造方法,其中該金屬材料為金(Au)、銀(Ag)、銅(Cu)、鋁(Au)或或上述金屬之任意組合之合金。
- 如申請專利範圍第21項所述之薄膜電晶體元件的製造方法,其中該溶液型導電材料為聚-3,4-二氧乙基噻吩(PEDOT)或銀奈米膠。
- 如申請專利範圍第13項所述之薄膜電晶體元件的製造方法,其中該第二電極是由一金屬材料或一溶液型導電材料所構成。
- 如申請專利範圍第24項所述之薄膜電晶體元件的製造方法,其中該金屬材料為金(Au)、銀(Ag)、銅(Cu)、鋁(Au)或或上述金屬之任意組合之合金。
- 如申請專利範圍第24項所述之薄膜電晶體元件的製造方法,其中該溶液型導電材料為聚-3,4-二氧乙基噻吩(PEDOT)或銀奈米膠。
- 如申請專利範圍第13項所述之薄膜電晶體元件的製造方法,其中該感光性絕緣層包括一正型光阻與一負型光阻。
- 如申請專利範圍第13項所述之薄膜電晶體元件的製造方法,其中該遮光材料為具阻擋UV光性質的材料。
- 如申請專利範圍第28項所述之薄膜電晶體元件的製造方法,其中該遮光材料為一含銀的金屬。
- 如申請專利範圍第13項所述之薄膜電晶體元件的製造方法,其中該第三電極是由一金屬材料或一溶液型導電材料所構成。
- 如申請專利範圍第30項所述之薄膜電晶體元件的製造方法,其中該金屬材料為金(Au)、銀(Ag)、銅(Cu)、鋁(Au)或或上述金屬之任意組合之合金。
- 如申請專利範圍第30項所述之薄膜電晶體元件的製造方法,其中該溶液型導電材料為聚-3,4-二氧乙基噻吩(PEDOT)或銀奈米膠。
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EP1040622A1 (en) * | 1997-12-17 | 2000-10-04 | BRITISH TELECOMMUNICATIONS public limited company | Proxy routing |
US20050181582A1 (en) * | 2000-01-07 | 2005-08-18 | Chun-Gi You | Contact structure of wiring and a method for manufacturing the same |
US20030180979A1 (en) * | 2001-03-23 | 2003-09-25 | Seiko Epson Corporation | Electrooptical substrate device and manufacturing method for same, electrooptical apparatus, electronic apparatus and manufacturing method for a substrate device |
US20040018655A1 (en) * | 2001-12-20 | 2004-01-29 | Lg. Philips Lcd Co., Ltd. | Method of fabricating liquid crystal display device |
TW587322B (en) * | 2002-12-31 | 2004-05-11 | Phoenix Prec Technology Corp | Substrate with stacked via and fine circuit thereon, and method for fabricating the same |
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US8216898B2 (en) | 2012-07-10 |
TW201021090A (en) | 2010-06-01 |
US20100129966A1 (en) | 2010-05-27 |
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