JP6241573B2 - 電子デバイスの製造方法 - Google Patents
電子デバイスの製造方法 Download PDFInfo
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- JP6241573B2 JP6241573B2 JP2017519016A JP2017519016A JP6241573B2 JP 6241573 B2 JP6241573 B2 JP 6241573B2 JP 2017519016 A JP2017519016 A JP 2017519016A JP 2017519016 A JP2017519016 A JP 2017519016A JP 6241573 B2 JP6241573 B2 JP 6241573B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 85
- 239000010410 layer Substances 0.000 claims description 578
- 238000000034 method Methods 0.000 claims description 205
- 239000004065 semiconductor Substances 0.000 claims description 191
- 239000010953 base metal Substances 0.000 claims description 119
- 238000007645 offset printing Methods 0.000 claims description 114
- 230000002441 reversible effect Effects 0.000 claims description 99
- 238000007747 plating Methods 0.000 claims description 97
- 238000000059 patterning Methods 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 53
- 239000007788 liquid Substances 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 42
- 239000010949 copper Substances 0.000 claims description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 239000004332 silver Substances 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 245
- 239000000976 ink Substances 0.000 description 122
- 230000008569 process Effects 0.000 description 63
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 44
- 239000011112 polyethylene naphthalate Substances 0.000 description 44
- 230000001681 protective effect Effects 0.000 description 31
- 238000007639 printing Methods 0.000 description 28
- 230000015572 biosynthetic process Effects 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- 239000013545 self-assembled monolayer Substances 0.000 description 27
- 230000006870 function Effects 0.000 description 24
- 239000010409 thin film Substances 0.000 description 21
- 239000010931 gold Substances 0.000 description 20
- 238000000206 photolithography Methods 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- 238000012546 transfer Methods 0.000 description 18
- 239000011521 glass Substances 0.000 description 16
- 239000005871 repellent Substances 0.000 description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- -1 polyethylene terephthalate Polymers 0.000 description 12
- 239000002094 self assembled monolayer Substances 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 10
- 230000002940 repellent Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 8
- 238000010304 firing Methods 0.000 description 8
- 239000011737 fluorine Substances 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000003825 pressing Methods 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 230000036961 partial effect Effects 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 238000007607 die coating method Methods 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- DCAYPVUWAIABOU-UHFFFAOYSA-N hexadecane Chemical compound CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052724 xenon Inorganic materials 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 230000009969 flowable effect Effects 0.000 description 3
- 238000007646 gravure printing Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- WCMLRSZJUIKVCW-UHFFFAOYSA-N 4-(trifluoromethyl)benzenethiol Chemical compound FC(F)(F)C1=CC=C(S)C=C1 WCMLRSZJUIKVCW-UHFFFAOYSA-N 0.000 description 2
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- HJAQXTYQEZKSPA-UHFFFAOYSA-N 1,1,2,2,2-pentafluoroethanethiol Chemical compound FC(F)(F)C(F)(F)S HJAQXTYQEZKSPA-UHFFFAOYSA-N 0.000 description 1
- UVAMFBJPMUMURT-UHFFFAOYSA-N 2,3,4,5,6-pentafluorobenzenethiol Chemical compound FC1=C(F)C(F)=C(S)C(F)=C1F UVAMFBJPMUMURT-UHFFFAOYSA-N 0.000 description 1
- BXMOMKVOHOSVJH-UHFFFAOYSA-N 2,3,5,6-tetrafluoro-4-(trifluoromethyl)benzenethiol Chemical compound FC1=C(F)C(C(F)(F)F)=C(F)C(F)=C1S BXMOMKVOHOSVJH-UHFFFAOYSA-N 0.000 description 1
- XVGQHRKNXSUPEF-UHFFFAOYSA-N 2-(trifluoromethyl)benzenethiol Chemical compound FC(F)(F)C1=CC=CC=C1S XVGQHRKNXSUPEF-UHFFFAOYSA-N 0.000 description 1
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 1
- VRVRGVPWCUEOGV-UHFFFAOYSA-N 2-aminothiophenol Chemical class NC1=CC=CC=C1S VRVRGVPWCUEOGV-UHFFFAOYSA-N 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 102100033215 DNA nucleotidylexotransferase Human genes 0.000 description 1
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 1
- 101000800646 Homo sapiens DNA nucleotidylexotransferase Proteins 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229920001167 Poly(triaryl amine) Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000011365 complex material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- CZWHMRTTWFJMBC-UHFFFAOYSA-N dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene Chemical compound C1=CC=C2C=C(SC=3C4=CC5=CC=CC=C5C=C4SC=33)C3=CC2=C1 CZWHMRTTWFJMBC-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000006011 modification reaction Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000002121 nanofiber Substances 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000003864 performance function Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- NYBWUHOMYZZKOR-UHFFFAOYSA-N tes-adt Chemical compound C1=C2C(C#C[Si](CC)(CC)CC)=C(C=C3C(SC=C3)=C3)C3=C(C#C[Si](CC)(CC)CC)C2=CC2=C1SC=C2 NYBWUHOMYZZKOR-UHFFFAOYSA-N 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- FMZQNTNMBORAJM-UHFFFAOYSA-N tri(propan-2-yl)-[2-[13-[2-tri(propan-2-yl)silylethynyl]pentacen-6-yl]ethynyl]silane Chemical compound C1=CC=C2C=C3C(C#C[Si](C(C)C)(C(C)C)C(C)C)=C(C=C4C(C=CC=C4)=C4)C4=C(C#C[Si](C(C)C)(C(C)C)C(C)C)C3=CC2=C1 FMZQNTNMBORAJM-UHFFFAOYSA-N 0.000 description 1
- MFLLMKMFWIUACU-UHFFFAOYSA-N trifluoromethanethiol Chemical compound FC(F)(F)S MFLLMKMFWIUACU-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
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- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
本発明の第2態様は、上記第1態様に係る電子デバイスの製造方法において、開口部により露出された下地金属層の表面にめっき層を形成することが好ましい。
本発明の第3態様は、上記第2態様に係る電子デバイスの製造方法において、めっき層の表面に自己組織単分子膜を形成することが好ましい。
本発明の第4態様は、上記第1〜第3態様のいずれか一態様に係る電子デバイスの製造方法において、絶縁層が撥液性を有していることが好ましい。
本発明の第5態様は、上記第4態様に係る電子デバイスの製造方法において、絶縁層上に半導体材料を含むインクを塗布することが好ましい。
本発明の第6態様は、上記第1〜第5態様のいずれか一態様に係る電子デバイスの製造方法において、開口部に半導体層を形成し、半導体層を覆うと共にフッ素系樹脂を有する保護層を絶縁層に積層させて形成し、絶縁層の開口部と連通する連通開口部を有する形状にパターニングされた第2パターニング膜を保護層が覆われるように絶縁層に積層させて第2絶縁層を形成することが好ましい。
本発明の第7態様は、上記第1〜第6態様のいずれか一態様に係る電子デバイスの製造方法において、銀(Ag)及び銅(Cu)の少なくともいずれかを含む導電インクを有する導電パターニング膜を基板上に積層させる反転オフセット印刷により下地金属層を形成することが好ましい。
以下、本発明の第1実施形態について説明する。本第1実施形態においては、本発明を液晶ディスプレイ及び電気泳動ディスプレイの駆動回路基板1(電子デバイス)の製造方法に適用した例について説明する。なお、本実施形態の電子デバイスの製造方法は、本実施形態の駆動回路基板1の製造方法にのみ適用されるものではなく、他の電子デバイス(例えば、TFT構造を有するセンサや、EL(Electro Luminescence)ディスプレイ、インバーター、メモリ等の複数の素子同士を層間接続する回路を有する電子デバイス)の製造方法に適用することも可能である。これに加え、本実施形態の撥液性を有するバンク層の形成はELの発光素子のパターン化にも有益に適用できる。
さらに、反転オフセット印刷法を用いて中間層10を形成するため、ブランケットの変形等に起因する印刷位置ずれを実質的に無視できる程度に小さく抑えることができる。このため、上述のように、貫通孔10aを正確な位置に配置することができる。
以下、本発明の第2実施形態について説明する。本第2実施形態においては、本発明をトップゲートボトムコンタクト型の有機TFT構造を有する駆動回路基板1Aの製造方法に適用した例について説明する。なお、本実施形態の説明において、上記第1実施形態と同様の部分については、その説明を省略あるいは簡略化する。
以下、本発明の第3実施形態について説明する。本第3実施形態においては、本発明をボトムゲートトップコンタクト型の有機TFT構造を有する駆動回路基板1Bの製造方法に適用した例について説明する。なお、本実施形態の説明においても、上記第1実施形態と同様の部分については、その説明を省略あるいは簡略化する。
以下、本発明の第4実施形態について説明する。本第4実施形態においては、本発明をトップゲートトップコンタクト型の有機TFT構造を有する駆動回路基板1Cの製造方法に適用した例について説明する。なお、本実施形態の説明においても、上記第1実施形態と同様の部分については、その説明を省略あるいは簡略化する。
例えば、ガラス基板G上に反転オフセット印刷法、撥液性絶縁インクをUV硬化または熱硬化させる方法等で予め形成された撥液性のバンク層7Aの凹部に、スピンコート法、IJ法、ブレードコート法、ディップコート法、スプレーコート法等により、導電インクを埋め込むことで、ゲート電極3が形成される。ソース電極5及びドレイン電極6も、ゲート絶縁膜4上に上記と同様に形成されたバンク層7Bの凹部に、導電インクを埋め込んで形成される。この場合、めっき層5b,6bは、各々、ベース金属層5a,6aの半導体用開口部7aに露出する上面部分に形成される。
以下のように、本実施形態を適用し、図4に示すトップゲートボトムコンタクト型のTFT構造を有する液晶パネル用の駆動回路基板を作製した。
以下のように、本実施形態を適用し、図4に示すトップゲートボトムコンタクト型のTFT構造を有する液晶パネル用の駆動回路基板を作製した。
2…PENフィルム
3…ゲート電極
4…ゲート絶縁膜
5…ソース電極
5a…ベース金属層(下地金属層)
5b…めっき層
6…ドレイン電極
6a…ベース金属層(下地金属層)
6b…めっき層
7…バンク層(絶縁層)
7a…半導体用開口部(開口部)
7b…貫通孔(開口部)
8…半導体層
9…保護膜(保護層)
10…中間層(絶縁層)
10a…貫通孔
11…コンタクトホール
12…画素電極
13…第2中間層(絶縁層)
Claims (7)
- 下地金属層と、前記下地金属層に積層される絶縁層とを有する電子デバイスの製造方法であって、
前記下地金属層の一部を露出する開口部として半導体層が形成される半導体用開口部と当該半導体用開口部と異なる貫通孔とを有する形状にパターニングされたパターニング膜を形成し、前記半導体用開口及び前記貫通孔を有する前記パターニング膜を前記下地金属層に積層させる反転オフセット印刷法により前記絶縁層を形成する、電子デバイスの製造方法。 - 前記開口部により露出された前記下地金属層の表面にめっき層を形成する、請求項1記載の電子デバイスの製造方法。
- 前記めっき層の表面に自己組織単分子膜を形成する、請求項2記載の電子デバイスの製造方法。
- 前記絶縁層が撥液性を有している、請求項1〜3いずれか一項に記載の電子デバイスの製造方法。
- 前記絶縁層上に半導体材料を含むインクを塗布する、請求項4記載の電子デバイスの製造方法。
- 前記半導体用開口部に半導体層を形成し、
前記半導体層を覆うと共にフッ素系樹脂を有する保護層を前記絶縁層に積層させて形成し、
前記絶縁層の前記半導体用開口部と連通する連通開口部を有する形状にパターニングされた第2パターニング膜を前記保護層が覆われるように前記絶縁層に積層させて第2絶縁層を形成する、
請求項1〜5いずれか一項に記載の電子デバイスの製造方法。 - 銀(Ag)及び銅(Cu)の少なくともいずれかを含む導電インクを有する導電パターニング膜を基板上に積層させる反転オフセット印刷により前記下地金属層を形成する、請求項1〜6いずれか一項に記載の電子デバイスの製造方法。
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