TWI381558B - Method of laser emitting peeling of light emitting diodes - Google Patents
Method of laser emitting peeling of light emitting diodes Download PDFInfo
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本發明係有關一種發光二極體激光剝離之方法，特別是指一種製造發光二極體晶粒之磊晶層結構的發光二極體激光剝離之方法。The invention relates to a method for laser stripping of light-emitting diodes, in particular to a method for laser stripping of light-emitting diodes for fabricating an epitaxial layer structure of light-emitting diode grains.
發光二極體(Light Emitting Diode, LED)中主要組成是LED晶粒，由發光的半導體材料多重磊晶而成。LED晶粒主要是由磷化鎵(GaP)，鎵鋁砷(GaAlAs)，或砷化鎵(GaAs)，氮化鎵(GaN)等半導體材料組成，其內部結構為一個PN結，具有單向導電性。The main component of a Light Emitting Diode (LED) is an LED die, which is formed by multiple epitaxy of a light-emitting semiconductor material. LED dies are mainly composed of gallium phosphide (GaP), gallium aluminum arsenide (GaAlAs), or gallium arsenide (GaAs), gallium nitride (GaN) and other semiconductor materials. The internal structure is a PN junction with one-way Electrical conductivity.
以藍光發光二極體為例，其在製作上一般是使用藍寶石(Al2O3)基板，用以成長出較高品質的氮化鎵基(GaN-based)磊晶薄膜。然而藍寶石基板的導電性及導熱性不良，限制傳統藍光LED僅能採用正負電極在基板同一側的橫向結構。如此一來，除了減少元件的發光面積之外，更因電流擁擠效應(current crowding effect)使元件導通電阻及順向壓降增加。Taking a blue light-emitting diode as an example, a sapphire (Al2O3) substrate is generally used for the production of a higher quality GaN-based epitaxial film. However, the conductivity and thermal conductivity of the sapphire substrate are poor, and the conventional blue LED can be limited to the lateral structure of the positive and negative electrodes on the same side of the substrate. In this way, in addition to reducing the light-emitting area of the component, the on-resistance and the forward voltage drop of the device are increased due to the current crowding effect.
為了改善上述缺失，目前高功率領域之發光二極體元件的作法是使用藍寶石基板成長氮化鎵基磊晶薄膜後，接著利用例如電鍍的方法成長一金屬薄膜，或是利用晶圓接合(wafer bonding)的方式，在氮化鎵基磊晶薄膜上形成一新的基板，再使用發光二極體激光剝離之方法(Laser Lift-Off)來移除藍寶石基板，使氮化鎵基磊晶薄膜最後是位於新的基板上的金屬粘著(Metal Bonding）晶粒。新基板透過其高散熱係數與良好的導電性，更適應於高驅動電流領域，且解決發光二極體元件高流明通量下散熱等問題。In order to improve the above-mentioned defects, the current light-emitting diode device in the high-power field is to grow a gallium nitride-based epitaxial film using a sapphire substrate, and then grow a metal film by, for example, electroplating, or use wafer bonding (wafer). Bonding), a new substrate is formed on the gallium nitride-based epitaxial film, and the sapphire substrate is removed by using a laser lift-off method (Laser Lift-Off) to form a gallium nitride-based epitaxial film. Finally, the metal bond (Metal Bonding) grains on the new substrate. The new substrate is more suitable for high driving current fields through its high heat dissipation coefficient and good electrical conductivity, and solves the problem of heat dissipation under high lumen flux of the LED component.
一般的發光二極體激光剝離之方法移除藍寶石基板，如圖1所示，先在一轉換基板10(例如藍寶石基板)上依序形成發光用的一磊晶層20，且將該磊晶層20蝕刻定義出隔離道22，形成間隔的晶粒區21，再將設有一黏合金屬層30的支持基板40與該磊晶層20結合。然後，將一具有鏤空區(可以是圓形、矩形等形狀)的光罩(圖中未示)鄰近該轉換基板10設置，且將激光50穿過光罩的鏤空區並照射該轉換基板10，此時激光50的照射區51位於該轉換基板10上的磊晶層20具有對應鏤空區的晶粒區21，以及位在晶粒區21周圍的隔離道22(如圖2所示)。利用激光50地毯式地掃描處理整塊轉換基板10加熱後，即可將該轉換基板10剝離該磊晶層20，此時該磊晶層20的晶粒區21透過該黏合金屬層30與該支持基板40結合。A general method of laser diode stripping removes a sapphire substrate. As shown in FIG. 1, an epitaxial layer 20 for light emission is sequentially formed on a conversion substrate 10 (for example, a sapphire substrate), and the epitaxial layer is formed. The layer 20 is etched to define the isolation trenches 22 to form spaced apart die regions 21, and a support substrate 40 provided with an adhesive metal layer 30 is bonded to the epitaxial layer 20. Then, a photomask (not shown) having a hollowed out region (which may be a circular shape, a rectangular shape, or the like) is disposed adjacent to the conversion substrate 10, and the laser light 50 is passed through the hollow region of the photomask and the conversion substrate 10 is irradiated. At this time, the epitaxial layer 20 of the irradiation region 51 of the laser 50 on the conversion substrate 10 has a grain region 21 corresponding to the hollow region, and an isolation channel 22 (shown in FIG. 2) located around the grain region 21. After the entire conversion substrate 10 is heated by the laser 50 carpet scanning process, the conversion substrate 10 can be peeled off the epitaxial layer 20, and the die region 21 of the epitaxial layer 20 passes through the bonding metal layer 30 and the The support substrate 40 is bonded.
然而，如圖3所示，當該轉換基板10將該磊晶層20結合於該支持基板40時，激光50穿過光罩的照射區51會因為轉換基板10與支持基板40的結合後產生的周邊翹曲而有對準上的問題。當激光50穿過光罩的鏤空區並照射該轉換基板10，此時激光50的照射區51在對準上，對於周邊的晶粒區21而言，照射區51會有向轉換基板10中心偏移的問題。所以，就算光罩的鏤空區已計算精準，對於該轉換基板10周邊的磊晶層20而言，在激光50地毯式地掃描處理整塊轉換基板10時，該激光50的照射區51還是會對於晶粒區21周圍相鄰的隔離道22會有兩次照射機會，如此在隔離道22的黏合金屬層30也將會受熱兩次，連續的高溫將會使得黏合金屬層30被破壞。目前的解決方式，係加寬隔離道22的寬度，避免該隔離道22的黏合金屬層30有二次受熱的機會。However, as shown in FIG. 3, when the conversion substrate 10 is bonded to the support substrate 40, the irradiation region 51 of the laser light 50 passing through the reticle may be generated by the combination of the conversion substrate 10 and the support substrate 40. The periphery is warped and there is a problem of alignment. When the laser light 50 passes through the hollow region of the reticle and illuminates the conversion substrate 10, at this time, the irradiation region 51 of the laser light 50 is aligned, and for the peripheral crystal grain region 21, the irradiation region 51 has a center toward the conversion substrate 10. The problem of offset. Therefore, even if the hollowed out area of the reticle has been calculated accurately, for the epitaxial layer 20 around the conversion substrate 10, when the laser 50 is carpet-scanned and processed by the entire conversion substrate 10, the irradiation area 51 of the laser 50 is still There will be two opportunities for the adjacent isolation channels 22 around the die zone 21, so that the bonded metal layer 30 in the isolation track 22 will also be heated twice, and the continuous high temperature will cause the bonded metal layer 30 to be destroyed. The current solution is to widen the width of the isolation channel 22 to avoid the chance of secondary heating of the bonded metal layer 30 of the isolation channel 22.
另，在激光50照射每一晶粒區21時，周圍相鄰的晶粒區21都會被照射區51內該晶粒區21向外產生的應力F1直接影響，在激光50掃描處理整塊轉換基板10後，磊晶層20的每一晶粒區21可能會多次激光50照射時，產生應力F1所造成的結構破壞，導致LED的結構遭到破壞。In addition, when the laser 50 irradiates each of the die regions 21, the adjacent adjacent die regions 21 are directly affected by the outwardly generated stress F1 in the irradiated region 51, and the laser 50 scans the entire block conversion. After the substrate 10, each of the crystal grain regions 21 of the epitaxial layer 20 may cause structural damage caused by the stress F1 when the laser light 50 is irradiated a plurality of times, resulting in destruction of the structure of the LED.
又美國專利公告第US7202141，其揭露了一種剝離材料之方法，其先於氧化鋁單晶基材上形成砷化鎵層，砷化鎵層藉由反應式離子腐蝕法或其他移除製程通道，使砷化鎵層形成複數個相同形狀且等距對稱排列之砷化鎵區，再以電鍍製程於砷化鎵上形成金屬基材，接著，再使用紫外線激光切割金屬基板於相對應各砷化鎵區之間的位置，再於金屬基材上形成支撐薄膜，之後，依序進行激光剝離製程將基材與金屬基材移除，使支撐薄膜形成砷化鎵晶片。於上述的製程中，藉由砷化鎵層型成以通道相隔離之砷化鎵區，可大幅降低在雷射剝離製程中，於砷化鎵/氧化鋁單晶界面之間的應力集中，而可能造成之應力破壞。U.S. Patent No. 7,202,141, which discloses a method of stripping a material, which forms a gallium arsenide layer on an alumina single crystal substrate, and the gallium arsenide layer is subjected to reactive ion etching or other removal of a process channel. The gallium arsenide layer is formed into a plurality of gallium arsenide regions of the same shape and arranged symmetrically symmetrically, and then a metal substrate is formed on the gallium arsenide by an electroplating process, and then the metal substrate is cut by ultraviolet laser to corresponding arsenic. The position between the gallium regions is further formed on the metal substrate, and then the laser stripping process is sequentially performed to remove the substrate and the metal substrate, so that the support film forms a gallium arsenide wafer. In the above process, the gallium arsenide layer is formed into a channel-separated gallium arsenide region, which can greatly reduce the stress concentration between the gallium arsenide/alumina single crystal interface in the laser stripping process. And the stress may be destroyed.
而於美國專利公告第US6617261號，則是揭示一種在氧化鋁單晶材上由GaN基材形成具溝槽圖型GaN層之結構與方法，先於氧化鋁單晶基材上藉砷化鎵成核層生長砷化鎵層，將二氧化矽沉積於砷化鎵層之上表面，並藉微影製程形成條狀圖型，接著，再以濕式化學或乾式蝕刻法在砷化鎵層上形成相對應條狀圖之溝槽，其中，溝槽之寬度可為100Å~1μm。U.S. Patent No. 6,661,261 discloses a structure and method for forming a GaN layer having a groove pattern from a GaN substrate on an alumina single crystal material, which is preceded by a gallium arsenide on an alumina single crystal substrate. The nucleation layer grows a gallium arsenide layer, deposits cerium oxide on the upper surface of the gallium arsenide layer, and forms a strip pattern by a lithography process, followed by a wet chemical or dry etching method on the gallium arsenide layer. A trench corresponding to the strip pattern is formed thereon, wherein the width of the trench may be 100 Å to 1 μm.
如上所述的習知技術，其皆揭露於砷化鎵區之間形成通道，因此其僅能解決雷設剝離製程中，砷化鎵/基材界面之間的應力集中問題，尚無法解決金屬基材受到多次加熱而遭受熱應力破壞的問題。The prior art as described above discloses that a channel is formed between the gallium arsenide regions, so that it can only solve the stress concentration problem between the gallium arsenide/substrate interface in the lightning stripping process, and the metal cannot be solved. The substrate is subjected to multiple heating and suffers from thermal stress damage.
於是，本發明之主要目的在於解決在隔離道的黏合金屬層兩次照射的問題，解決黏合金屬層兩次受熱，使黏合金屬層結構遭到破壞的問題，提昇晶粒的良率。Therefore, the main object of the present invention is to solve the problem of double irradiation of the adhesive metal layer in the isolation track, solve the problem that the adhesive metal layer is heated twice, the structure of the adhesive metal layer is damaged, and the grain yield is improved.
本發明的另一目的在於解決被照射的每一晶粒區產生的應力直接產生影響周圍的晶粒，防止磊晶層結構遭到破壞，提昇晶粒的良率。Another object of the present invention is to solve the stress generated in each grain region to be irradiated, directly affecting the surrounding crystal grains, preventing the structure of the epitaxial layer from being damaged, and improving the grain yield.
本發明解決技術問題所採用的技術方案是，在提供一種應用於一轉換基板上形成一磊晶層，且在將設有一黏合金屬層的一支持基板與該磊晶層結合前，本發明將該磊晶層蝕刻定義出一隔離道於每一個晶粒區周圍，且相鄰二隔離道間設有未被蝕刻的一隔離區。其中，該晶粒區的間距是由二相鄰隔離道與其中間的隔離區所定義而成，該隔離道的寬度為1μm(微米)~10μm，該隔離區的寬度為10μm~100μm。The technical solution adopted by the present invention is to provide an epitaxial layer on a conversion substrate, and before combining a support substrate provided with an adhesive metal layer with the epitaxial layer, the present invention will The epitaxial layer etching defines an isolation channel around each of the die regions, and an isolation region that is not etched is disposed between the adjacent two isolation tracks. The spacing of the die regions is defined by two adjacent isolation channels and an isolation region therebetween. The isolation track has a width of 1 μm (micrometer) to 10 μm, and the isolation region has a width of 10 μm to 100 μm.
藉由前述，於每一相鄰的晶粒區間形成二個隔離道，與一個隔離區，因此，當該支持基板透過黏合金屬層與該磊晶層結合後，在利用激光地毯式地掃描處理整塊轉換基板加熱用以將該轉換基板剝離該磊晶層時，當激光穿過光罩的鏤空區照射該轉換基板，激光的照射區只會對晶粒區周圍的隔離道與隔離區做照射，所以就算是在該轉換基板周邊的晶粒區，也只有被照射晶粒區週邊的隔離區被作二次照射，而在每一個晶粒區周邊的隔離道都將只會有一次照射機會，使在隔離道的黏合金屬層將會只受熱一次。By the foregoing, two isolation tracks are formed in each adjacent die interval, and an isolation region. Therefore, when the support substrate is bonded to the epitaxial layer through the adhesive metal layer, the laser carpet is used for scanning processing. When the entire conversion substrate is heated to peel the conversion substrate from the epitaxial layer, when the laser passes through the hollow region of the reticle to illuminate the conversion substrate, the laser irradiation region only makes the isolation track and the isolation region around the grain region. Irradiation, so even in the grain area around the conversion substrate, only the isolation area around the grain area is double-irradiated, and the isolation track around each grain area will only have one illumination. The opportunity is that the bonded metal layer in the isolation track will only be heated once.
且，在激光照射每一晶粒區時，因為被照射的晶粒區，與其周圍的隔離區都在激光的照射區內，所以被照射的晶粒區產生的向外應力將會被周圍的隔離區所產生相反的應力相抵消，減輕磊晶層中每一晶粒區受到應力而產生的結構破壞。Moreover, when the laser irradiates each grain region, since the irradiated grain region and the surrounding isolation region are both in the irradiation region of the laser, the outward stress generated by the irradiated grain region will be surrounded by The opposite stress generated by the isolation region cancels out, and structural damage caused by stress in each crystal grain region in the epitaxial layer is alleviated.
本發明的優點相較習知技術而言，在於透過每一相鄰的晶粒區間形成的隔離區，使每一次的激光照射只會對晶粒區周圍的隔離道與隔離區做照射，所以在每一個晶粒區周邊的隔離道都將只會有一次照射機會，在隔離道的黏合金屬層將會只受熱一次，減少激光對黏合金屬層結構的破壞，導致LED的結構遭到破壞。The advantage of the present invention is that, in comparison with the prior art, the isolation region formed by each adjacent grain interval causes each laser irradiation to illuminate only the isolation track and the isolation region around the grain region, so In the isolation track around each die area, there will be only one chance of illumination. The adhesive metal layer in the isolation track will only be heated once, reducing the damage of the laser to the structure of the bonded metal layer, resulting in damage to the structure of the LED.
相對於第US7202141案所揭露的技術，該習知技術並未有本發明所定亦由未腐蝕之磊晶層所形成的隔離區，亦即習知技術並未有作為保護金屬基材用途之砷化鎵隔離區。Compared with the technology disclosed in Japanese Patent No. 7,202,141, the prior art does not have the isolation region defined by the present invention and also formed by the unetched epitaxial layer, that is, the prior art does not have the arsenic used as a protective metal substrate. Gallium isolation zone.
另，習知技術雷射光由於沒有隔離區的存在，其會照射多個砷化鎵構成的照設區，而本案則僅涵蓋單一晶粒區，因此透過每一相鄰的晶粒區間形成的隔離區，在激光照射每一晶粒區時，藉由被照射的晶粒區周圍的隔離區所產生的向外應力，與被照射之晶粒區所產生的向外應力互相抵消，減輕磊晶層中每一晶粒區被激光照射所產生的應力破壞結構。In addition, the conventional technology laser light irradiates a plurality of illumination regions composed of gallium arsenide because there is no isolation region, and the present invention covers only a single crystal grain region, and thus is formed by each adjacent crystal grain region. In the isolation region, when the laser irradiates each grain region, the outward stress generated by the isolation region around the irradiated grain region cancels out the outward stress generated by the irradiated grain region, thereby reducing the deflection The stress generated by laser irradiation in each grain region of the crystal layer destroys the structure.
茲有關本發明的詳細內容及技術說明，現以實施例來作進一步說明，但應瞭解的是，該等實施例僅為例示說明之用，而不應被解釋為本發明實施之限制。The detailed description of the present invention and the technical description of the present invention are further illustrated by the accompanying drawings, but it should be understood that these embodiments are merely illustrative and not to be construed as limiting.
請參閱圖5，本發明係應用於現有的發光二極體激光剝離之方法，發光二極體激光剝離之方法在實施上，係先在一轉換基板100(例如藍寶石基板)上依序形成發光用的一磊晶層200。與習知發光二極體激光剝離之方法不同的是，本發明將該磊晶層200蝕刻定義出一隔離道220於每一個晶粒區210周圍，且相鄰二隔離道220間設有未被蝕刻，也是該磊晶層200材料的一隔離區230。因此，該晶粒區210的間距是由二相鄰隔離道220與位於其中間的隔離區230所定義而成。實施上，該隔離道220的寬度為1μm~10μm，該隔離區230的寬度為10μm~100μm，該隔離區230的寬度大於該隔離道220的寬度。Referring to FIG. 5 , the present invention is applied to a conventional method for laser stripping of a light-emitting diode. The method for laser stripping of a light-emitting diode is performed by sequentially forming a light on a conversion substrate 100 (for example, a sapphire substrate). An epitaxial layer 200 is used. Different from the conventional method for laser stripping of the LED, the epitaxial layer 200 is etched to define an isolation track 220 around each of the die regions 210, and between the adjacent isolation channels 220 is provided. Etched, which is also an isolation region 230 of the material of the epitaxial layer 200. Therefore, the pitch of the die region 210 is defined by two adjacent isolation channels 220 and an isolation region 230 located therebetween. In practice, the isolation track 220 has a width of 1 μm to 10 μm, and the isolation region 230 has a width of 10 μm to 100 μm. The width of the isolation region 230 is greater than the width of the isolation channel 220.
然後，再將設有一黏合金屬層300的支持基板400與該磊晶層200結合。Then, a support substrate 400 provided with an adhesive metal layer 300 is bonded to the epitaxial layer 200.
然後，將一具有鏤空區(可以是圓形、矩形等形狀)的光罩(圖中未示)鄰近該轉換基板100設置，且將激光500穿過光罩的鏤空區並照射該轉換基板100，利用激光500地毯式地掃描處理整塊轉換基板100加熱後，即可將該轉換基板100剝離該磊晶層200，此時該磊晶層200的晶粒區210透過該黏合金屬層300與該支持基板400結合。Then, a photomask (not shown) having a hollowed out region (which may be a circular shape, a rectangular shape, or the like) is disposed adjacent to the conversion substrate 100, and the laser light 500 is passed through the hollow region of the photomask and illuminates the conversion substrate 100. After the whole of the conversion substrate 100 is heated by the laser 500 carpet scanning process, the conversion substrate 100 can be peeled off from the epitaxial layer 200. At this time, the die region 210 of the epitaxial layer 200 is transmitted through the adhesion metal layer 300. The support substrate 400 is bonded.
以矩形形狀的鏤空區為說明例，如圖6所示，當激光500的照射區510位於該轉換基板100上的磊晶層200具有對應鏤空區的晶粒區210時，因為每一相鄰的晶粒區210間有二個隔離道220與一個隔離區230。因此，每一次的激光500照射都只會照射到要照射的晶粒區210，與該被照射晶粒區210周圍的隔離道220，以及前述隔離道220旁的隔離區230，而位於該隔離區230另一側的隔離道220不會被照射到。尤其對於該轉換基板100與該支持基板400結合後產生的周邊翹曲處，當激光500穿過光罩的鏤空區並照射該轉換基板100時，該轉換基板100周邊的晶粒區210也只有被照射晶粒區210週邊的隔離區230會被激光500作二次照射，而在每一個晶粒區210周邊的隔離道220都將只會被激光500一次照射的機會，也就是在該些隔離道220的黏合金屬層300只會受熱一次。對於周邊的晶粒區210而言，就算照射區510會有向轉換基板100中心偏移的現象，本發明方法可以去除激光500對隔離道220二次照射的機會，降低激光500對黏合金屬層300材料的破壞。Taking a rectangular shaped hollow region as an illustrative example, as shown in FIG. 6, when the irradiation region 510 of the laser light 500 is located on the conversion substrate 100, the epitaxial layer 200 has a grain region 210 corresponding to the hollow region, because each adjacent There are two isolation channels 220 and one isolation region 230 between the die regions 210. Therefore, each laser 500 irradiation is only irradiated to the crystal grain region 210 to be irradiated, the isolation track 220 around the irradiated crystal grain region 210, and the isolation region 230 adjacent to the aforementioned isolation channel 220, and located in the isolation. The isolation track 220 on the other side of the zone 230 is not illuminated. Especially for the peripheral warpage generated after the conversion substrate 100 is combined with the support substrate 400, when the laser light 500 passes through the hollow region of the reticle and illuminates the conversion substrate 100, the die area 210 around the conversion substrate 100 is only The isolation region 230 around the illuminated grain region 210 is twice illuminated by the laser 500, and the isolation channel 220 around each die region 210 will only be illuminated by the laser 500 once, that is, at these The bonded metal layer 300 of the isolation track 220 is only heated once. For the peripheral grain region 210, even if the irradiation region 510 has a phenomenon of shifting toward the center of the conversion substrate 100, the method of the present invention can remove the opportunity for the laser 500 to double-irradiate the isolation channel 220, and reduce the laser 500 to the bonding metal layer. The destruction of 300 materials.
雖然，該些隔離區230承受二次照射的問題，但也因為該些隔離區230在製成發光二極體的過程應用上並不會再被使用到，在該轉換基板100剝除後，再利用乾蝕刻方式去除該些隔離區230即可，並不影響後續的發光二極體製程。Although the isolation regions 230 are subject to the problem of secondary illumination, because the isolation regions 230 are not used in the process application for forming the light-emitting diodes, after the conversion substrate 100 is stripped, The isolation region 230 can be removed by dry etching, which does not affect the subsequent LED process.
請再參閱圖7，另外在激光500照射使該晶粒區210產生向外應力F1上，本發明在激光500照射每一晶粒區210時，因為被照射的晶粒區210，與其周圍的隔離區230都在激光500的照射區510內，所以被照射的晶粒區210產生的向外應力F1將會被周圍的隔離區230所產生相反的應力F2相抵消，減輕磊晶層200中每一晶粒區210受到激光500照射時所產生的應力F1破壞該晶粒區210結構。Referring to FIG. 7, in addition, when the laser 500 is irradiated to generate the outward stress F1 of the crystal grain region 210, the present invention irradiates the crystal grain region 210 with the laser grain region 210, and the surrounding region thereof. The isolation region 230 is in the irradiation region 510 of the laser 500, so the outward stress F1 generated by the irradiated crystal region 210 will be offset by the opposite stress F2 generated by the surrounding isolation region 230, mitigating the epitaxial layer 200. Each grain region 210 is damaged by the stress F1 generated by the laser light 500 to destroy the structure of the grain region 210.
假設晶粒區210的俯視為正方形，且其邊長為L，而相鄰晶粒區210的間距為2L’。則被照射的晶粒區210產生的向外應力F1等比於L2，而被照射晶粒區210周圍的隔離區230產生的向外應力F2等比於(L+2L’)2-L2。以L=100μm，2L’=10μm為例，被照射的晶粒區210產生的向外應力F1被周圍的隔離區230所產生的應力F2抵消約(F1-F2)/(F1)=(400-316)/400近似等於20%。It is assumed that the grain region 210 has a square shape in plan view and has a side length L, and the adjacent crystal grain regions 210 have a pitch of 2L'. Then, the outward stress F1 generated by the irradiated crystal grain region 210 is equal to L2, and the outward stress F2 generated by the isolation region 230 around the irradiated crystal grain region 210 is equal to (L+2L')2-L2. Taking L = 100 μm, 2L' = 10 μm as an example, the outward stress F1 generated by the irradiated grain region 210 is offset by the stress F2 generated by the surrounding isolation region 230 (F1-F2) / (F1) = (400 -316) / 400 is approximately equal to 20%.
F1、F2‧‧‧應力F1, F2‧‧‧ stress
L‧‧‧邊長L‧‧‧Bian Chang
2L’‧‧‧間距2L’‧‧‧ spacing
100‧‧‧轉換基板100‧‧‧ Conversion substrate
200‧‧‧磊晶層200‧‧‧ epitaxial layer
210‧‧‧晶粒區210‧‧‧ grain area
220‧‧‧隔離道220‧‧‧Isolated Road
230‧‧‧隔離區230‧‧‧Isolated area
300‧‧‧黏合金屬層300‧‧‧ bonded metal layer
400‧‧‧支持基板400‧‧‧Support substrate
500‧‧‧激光500‧‧‧Laser
510‧‧‧照射區510‧‧‧Irradiated area
圖1為習知發光二極體激光剝離之方法的示意圖。FIG. 1 is a schematic view of a conventional method of laser stripping of a light-emitting diode.
圖2為習知激光照射區與晶粒區的示意圖。2 is a schematic view of a conventional laser irradiation zone and a grain zone.
圖3為該轉換基板不同區域的照射區與晶粒區的相對位置示意圖。3 is a schematic view showing the relative positions of the irradiation area and the grain area in different regions of the conversion substrate.
圖4為習知晶粒區被激光照射時的應力示意圖。Fig. 4 is a schematic view showing the stress when a conventional crystal grain region is irradiated with a laser.
圖5為本發明發光二極體激光剝離之方法的示意圖。Fig. 5 is a schematic view showing a method of laser stripping of a light-emitting diode according to the present invention.
圖6為本發明激光照射區與晶粒區的示意圖。Figure 6 is a schematic view of a laser irradiation zone and a grain zone of the present invention.
圖7為本發明晶粒區被激光照射時的應力示意圖。Fig. 7 is a schematic view showing the stress of the crystal grain region of the present invention when it is irradiated with laser light.
100‧‧‧轉換基板 100‧‧‧ Conversion substrate
200‧‧‧磊晶層 200‧‧‧ epitaxial layer
210‧‧‧晶粒區 210‧‧‧ grain area
220‧‧‧隔離道 220‧‧‧Isolated Road
230‧‧‧隔離區 230‧‧‧Isolated area
300‧‧‧黏合金屬層 300‧‧‧ bonded metal layer
400‧‧‧支持基板 400‧‧‧Support substrate
500‧‧‧激光 500‧‧‧Laser
Claims (4)
將設有該黏合金屬層的支持基板與該磊晶層結合前，該磊晶層蝕刻定義出一隔離道於每一個晶粒區周圍，且相鄰二隔離道間設有未被蝕刻的磊晶層形成的一隔離區；
藉此，激光每次照射區含蓋單一晶粒區，被照射晶粒區周圍的隔離道，與在被照射晶粒區周圍的隔離區。A method for laser stripping of a light-emitting diode is applied to a conversion substrate to form an epitaxial layer, and a support substrate provided with a bonding metal layer is stripped from the conversion substrate after the epitaxial layer is bonded;
Before the supporting substrate provided with the bonding metal layer is combined with the epitaxial layer, the epitaxial layer etching defines an isolation channel around each of the die regions, and an unetched Lei is disposed between adjacent two isolation channels. An isolation region formed by the crystal layer;
Thereby, each time the laser irradiation region covers a single crystal grain region, the isolation track around the grain region is irradiated, and the isolation region around the irradiated crystal grain region.
The method of claim 2, wherein the isolation region has a width of 10 micrometers to 100 micrometers.
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| US9408300B2 (en) | 2014-12-16 | 2016-08-02 | Industrial Technology Research Institute | Flexible device and fabrication method of flexible device |
| US9591746B2 (en) | 2014-12-16 | 2017-03-07 | Industrial Technology Research Institute | Electronic device package, electronic device structure and method of fabricating electronic device package |
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| US6617261B2 (en) * | 2001-12-18 | 2003-09-09 | Xerox Corporation | Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates |
| US7202141B2 (en) * | 2004-03-29 | 2007-04-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
| US20080210955A1 (en) * | 2007-01-29 | 2008-09-04 | Toyoda Gosei Co., Ltd. | Group III-V semiconductor device and method for producing the same |
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| US6617261B2 (en) * | 2001-12-18 | 2003-09-09 | Xerox Corporation | Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates |
| US7202141B2 (en) * | 2004-03-29 | 2007-04-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
| US20080210955A1 (en) * | 2007-01-29 | 2008-09-04 | Toyoda Gosei Co., Ltd. | Group III-V semiconductor device and method for producing the same |
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| US9408300B2 (en) | 2014-12-16 | 2016-08-02 | Industrial Technology Research Institute | Flexible device and fabrication method of flexible device |
| US9591746B2 (en) | 2014-12-16 | 2017-03-07 | Industrial Technology Research Institute | Electronic device package, electronic device structure and method of fabricating electronic device package |
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