TW201115780A - Laser lift-off method for LED - Google Patents

Abstract

The present invention relates to a laser lift-off method for LED. The method is to etch the epitaxial layer to define separation channels around each chip section after an epitaxial layer grown on the transient substrate and before the substrate that has adhesion metal layer is boned with the epitaxial layer. A separation zone that is not etched is formed between two adjacent separation channels. Each laser illumination area only covers one illuminated chip section, the separation channels surrounding the illuminated chip section, and the separation zones surrounding the illuminated chip section. Thus, the adhesion metal layer on the separation channels is only heated once. Further, the outward stress generated by the illuminated chip section is counterbalanced by the outward stress generated by the illuminated separation zones, and the stress-induced structural damage on the chip section is reduced.

Description

201115780 六、發明說明： 【發明所屬之技術領域】 [_ι] 本發明係有關一種發光二極體激光剝離之方法，特別 是指一種製造發光二極體晶粒之磊晶層結構的發光二極 體激光剝離之方法。 [先前技術】 [0002] [0003]201115780 VI. Description of the invention: [Technical field of invention] [_ι] The present invention relates to a method for laser stripping of a light-emitting diode, and more particularly to a light-emitting diode for fabricating an epitaxial layer structure of a light-emitting diode crystal grain The method of body laser peeling. [Prior Art] [0002] [0003]

發光二極體（Light Emitting Diode, LED)中主要 組成是LED晶粒，由發光的半導體材料多重磊晶而成。 LED晶粒主要是由磷化鎵（GaP)，鎵鋁砷（GaAlAs)，或 砷化鎵（GaAs)，氮化鎵（G#1)等半導體材料組成，其内 部結構為一個PN結，具有單向 以藍光發光二極體為例_驗是使用藍寶 石（A1203)基板，用以成長出較高品質的氮化鎵基 ; (GaN-based)磊晶感膜。然而藍寶石拳板的導電性及導 熱性不良，限制傳統藍光LfDM輯採巧正負電極在基板同 ir'eiiedud1 一側的橫向結構。如此一 元件的發光面積 > I OUfel ty 之外，更因電流擁擠λ應A crowding ef-feet.)使元件導通電阻及順向壓降增加。 [0004] 為了改善上述缺失，目前高功率領域之發光二極體元 件的作法是使用藍寶石基板成長氮化鎵基磊晶薄膜後’ 接著利用例如電鍍的方法成長一金屬薄膜，或是利用晶 圓接合（wafer bonding)的方式，.在氮化鎵基蟲晶薄膜 上形成一新的基板’再使用發光二極體激光剝離之方法 (Laser Lift-Off)來移除藍寶石基板，使氮化鎵基蟲 晶薄膜最後是位於新的基板上的金屬粘著（Metal Bond- 098136259 表單編號A0101 第3頁/共18頁 0982062141-0 201115780 ing)晶粒。新基板透過其高散熱係數與良好的導電性’ 更適應於高媒動電流領域，且解決發光二極體元件高流 明通量下散熱等問題。 [0005] 一般的發光二極體激光剝離之方法移除藍寶石基板， 如圖1所示，先在一轉換基板1〇(例如藍寶石基板）上依序 形成發光用的一磊晶層20，且將該磊晶層20蝕刻定義出 隔離道22，形成間隔的晶粒區21，再將設有一黏合金屬 層30的支持基板40與該磊晶層20結合。然後，將一具有 鏤空區（可以是圓形、矩形等形狀）的光罩（圖中未示）鄰 近該轉換基板10設置，·且將激光50穿過光軍的鏤空區並The main component of a Light Emitting Diode (LED) is an LED die, which is formed by multiple epitaxy of a light-emitting semiconductor material. LED dies are mainly composed of gallium phosphide (GaP), gallium aluminum arsenide (GaAlAs), or gallium arsenide (GaAs), gallium nitride (G#1) and other semiconductor materials. The internal structure is a PN junction with One-way example of a blue light-emitting diode is to use a sapphire (A1203) substrate to grow a higher quality gallium nitride-based (GaN-based) epitaxial film. However, the conductivity and thermal conductivity of the sapphire box are poor, which limits the lateral structure of the conventional blue-light LfDM on the side of the substrate and the ir'eiiedud1 side. In addition to the light-emitting area of the component > I OUfel ty , the current on-resistance and the forward voltage drop are increased due to current crowding λ A crowding ef-feet. [0004] In order to improve the above-mentioned defects, the current light-emitting diode device in the high-power field is to use a sapphire substrate to grow a gallium nitride-based epitaxial film, and then to grow a metal film by, for example, electroplating, or to use a wafer. Wafer bonding method: forming a new substrate on a gallium nitride-based insect film, and then removing the sapphire substrate by using a laser lift-off method (Laser Lift-Off) to make gallium nitride The base crystal film is finally a metal bond on a new substrate (Metal Bond- 098136259 Form No. A0101 Page 3 of 18 09820622141-0 201115780 ing). The new substrate is more suitable for high dielectric currents through its high heat dissipation coefficient and good electrical conductivity, and solves the problem of heat dissipation under high lumen flux of the LED components. [0005] A general method of laser diode stripping removes a sapphire substrate, and as shown in FIG. 1, an epitaxial layer 20 for light emission is sequentially formed on a conversion substrate 1 (for example, a sapphire substrate), and The epitaxial layer 20 is etched to define the isolation track 22 to form a spaced die region 21, and the support substrate 40 provided with an adhesive metal layer 30 is bonded to the epitaxial layer 20. Then, a photomask (not shown) having a hollowed out area (which may be a circular shape, a rectangular shape, or the like) is disposed adjacent to the conversion substrate 10, and the laser light 50 is passed through the hollow area of the light army.

照射該轉換基板10，此時ί 基板10上的磊晶層20具有楽The conversion substrate 10 is irradiated, and at this time, the epitaxial layer 20 on the substrate 10 has 楽

[4於該轉換 21，以及 位在晶粒區21周圍的隔離道22(如圖2所承）》利用激光 50地毯式地掃描處理整塊轉換基板10加無後，即可將該 轉換基板10剝離該遙.晶層2..0 ' $跨該蠢晶層20的晶粒區 Γ/ ^1; [0006] 21透過該黏合金屬層30與詖结合。 然而’如圖3所示’當纖赫10將該磊晶層20結 合於該支持基板40時’激光50穿過光罩的照射區51會因 為轉換基板10與支持基板40的結合後產生的周邊麵曲而 有對準上的問題。當激光50穿過光罩的鏤空區並照射該 轉換基板10 ’此時激光50的照射區51在對準上，對於周 邊的晶粒區21而言’照射區51會有向轉換基板1 〇中心偏 移的問題。所以，就算光罩的鏤空區已計算精準，對於 該轉換基板10周邊的磊晶層20而言’在數光5〇地毯式地 掃描處理整塊轉換基板10時，該激光50的照射區51還是 098136259 表單編號A0101 第4頁/共18頁 0982062141-0 201115780 會對於晶粒區21周圍相鄰的隔離道2.2會有兩次照射機會 ’如此在隔離道22的黏合金屬層30也將會受熱兩次，連 續的高溫將會使得黏合金屬層30被破壞。目前的解決方 式’係加寬隔離道22的寬度，避免該隔離道22的黏合金 屬層30有二次受熱的機會。 [0007][4] In the conversion 21, and the isolation track 22 (as shown in FIG. 2) located around the die region 21, the conversion substrate can be replaced by the laser 50 carpet scanning process after the entire conversion substrate 10 is added. 10 peeling off the crystal layer 2..0'$ across the grain region 该 / ^1 of the stray layer 20; [0006] 21 is bonded to the crucible through the adhesion metal layer 30. However, as shown in FIG. 3, when the epitaxial layer 20 is bonded to the support substrate 40, the irradiation region 51 of the laser light 50 passing through the photomask may be generated by the combination of the conversion substrate 10 and the support substrate 40. The surrounding surface is curved and there is a problem of alignment. When the laser light 50 passes through the hollow region of the reticle and illuminates the conversion substrate 10', at this time, the irradiation region 51 of the laser light 50 is aligned, and for the peripheral crystal grain region 21, the irradiation region 51 has a conversion substrate 1 The problem of center offset. Therefore, even if the hollowed out area of the reticle has been accurately calculated, for the epitaxial layer 20 around the conversion substrate 10, the illuminating area 51 of the laser 50 is scanned when the entire conversion substrate 10 is scanned and processed in a plurality of colors. Or 098136259 Form No. A0101 Page 4 / Total 18 Page 0962062141-0 201115780 There will be two chances of illumination for adjacent isolation channels 2.2 around the die area 21 so that the bonded metal layer 30 in the isolation track 22 will also be heated. Twice, continuous high temperatures will cause the bonded metal layer 30 to be destroyed. The current solution 'is widening the width of the isolation track 22 to avoid the chance of secondary heating of the bonded alloy layer 30 of the isolation track 22. [0007]

另’在激光50照射每一晶粒區21時，周圍相鄰的晶粒 區21都會被照射區51内該晶粒區21向外產生的應力1^直 接影響’在激光50掃描處理整塊轉換基板1〇後，磊晶層 20的每一晶粒區21可能會多次激光5〇照射時，產生應力 F1所造成的結構破壞’導致LEI)的結搆遭到_壞。 [0008] 又美國專利公告第US720 料之方法，其先於氧化鋁 種剝離材 匕嫁層，坤 化鎵層藉由反應式離予腐蝕法或其他移除裝^程通道，使 件化鎵層形成複教個相同形狀且等距對稱排列之砷化鎵 區，再以電鍵製程於坤MrttiMM，接著，‘ 使用紫外線激光切割金屬各砷化鎵區之間In addition, when the laser 50 irradiates each of the crystal grain regions 21, the surrounding adjacent crystal grain regions 21 are directly affected by the outward stress generated by the crystal grain regions 21 in the irradiation region 51. After the conversion substrate 1 is turned on, each of the crystal grain regions 21 of the epitaxial layer 20 may be irradiated with a plurality of lasers 5 times, and the structure damage caused by the stress F1 'leading to LEI' is deteriorated. [0008] Further, the method of US Pat. No. 720, which is preceded by the alumina seed stripping layer, the gallium layer is made by reactive ionization etching or other removal of the mounting channel to make the gallium The layer forms a gallium arsenide region of the same shape and equidistantly symmetrically arranged, and then is electrically connected to the Kun MorttiMM, and then, 'Using ultraviolet laser to cut the metal between the gallium arsenide regions

的位置，苒於金屬基材上遽禮膜，之後，依序進 行激光剝離製程將基材與金屬基材移除，使支撐薄膜形 成神化鎵晶片。於上述的製程中，藉由砷化鎵層型成以 通道相隔離之砷化鎵區，可大幅降祗在雷射剝離製程中 ’於坤化鎵/氧化銘單晶界面之間的應力集中，而可能造 成之應力破壞。 [0009] 而於美國專利公告第US6617261號，則是揭示一種在 氧化銘單晶材上由GaN基材形成具溝槽圖型GaN層之結構 與方法’先於氡化鋁單晶基材上藉砷化鎵成核層生長砷 098136259 表單編號A0101 第5頁/共18頁 0982062141-0 201115780 化鎵層，將二氧切沉積㈣化鎵層之上表面並藉微 影製程形祕㈣型，接著，相濕认學或乾式餘刻 法在坤化鎵層上形成相對應條狀圖之溝槽，其中，溝槽 之寬度可為100A〜1 /zm。 [0010] 如上所述的習知技術，其皆揭露於坤化鎵區之間形成 通道，因此其僅鋪決雷設_製㈣，_域/基材界 面之間的應力集中問題，尚無法解決金屬基材受到多次 加熱而遭受熱應力破壞的問題。 [0011] 【發明内容】 於是，本發明之主要目的在於解決在祕道的黏合金 屬層兩次照射的問題，解決職熱，使黏 合金屬層結構遭到破壞的問率The position is smashed on the metal substrate, and then the laser stripping process is sequentially performed to remove the substrate and the metal substrate, so that the supporting film forms a deified gallium wafer. In the above process, the gallium arsenide layer is formed into a channel-phase-separated gallium arsenide region, which can greatly reduce the stress concentration between the interface of the Kunming gallium/oxidized single crystal in the laser stripping process. And may cause stress damage. [0009] In U.S. Patent No. 6,661,261, it is disclosed that a structure and a method for forming a grooved pattern GaN layer from a GaN substrate on an oxidized single crystal material are preceded by an aluminum telluride single crystal substrate. Growth of arsenic by gallium arsenide nucleation layer 098136259 Form No. A0101 Page 5 of 18 0982062141-0 201115780 The gallium layer is deposited by dioxin (4) on the upper surface of the gallium layer and by the lithography process (4) type. Then, the phase wet or dry remnant method forms a groove corresponding to the bar graph on the gallium layer, wherein the width of the trench may be 100A~1 /zm. [0010] The prior art as described above discloses that a channel is formed between the gallium and germanium regions, so that it only solves the problem of stress concentration between the _ domain/substrate interface. The problem that the metal substrate is subjected to multiple heating and subjected to thermal stress damage is solved. SUMMARY OF THE INVENTION Accordingly, the main object of the present invention is to solve the problem of double irradiation of the adhesive alloy layer in the secret channel, and to solve the problem of occupational heat and destruction of the structure of the bonded metal layer.

[0012] [0013] 本發明的另-目的在於解味被照射的每一晶粒區產生 的應力直接產生影響周圍的晶粒，防止蟲晶層結構遭到 破壞’提昇晶粒的良率。：. a J 10* ψ% 本發明解決技術問題所採的;案是，在提供一 種應用於一轉換基板上形蠤I，且在將設有一黏 合金屬層的一支持基板與該磊晶層結合前，本發明將該 磊晶層蝕刻定義出一隔離道於每一個晶粒區周圍，且相 鄰一隔離道間設有未被钱刻的一隔離區。其中，該晶粒 區的間距是由二相鄰隔離道與其中間的隔離區所定義而 成，該隔離道的寬度為(微米，該隔離區的 寬度為10//m〜10 〇从m。 [0014] 藉由前述，於每一相鄰的晶粒區間形成二個隔離道， 098136259 表單編號A0101 第6頁/共18頁 0982062141-0 201115780 與一個隔離區，因此，當該支持基板透過黏合金屬層與 該磊晶層結合後，在利用激光地毯式地掃描處理整塊轉 換基板加熱用以將該轉換基板剝離該磊晶層時，當激光 穿過光罩的鏤空區照射該轉換基板，激光的照射區只會 對晶粒區周圍的隔離道與隔離區做照射，所以就算是在 該轉換基板周邊的晶粒區，也只有被照射晶粒區週邊的 隔離區被作二次照射，而在每一個晶粒區周邊的隔離道 都將只會有一次照射機會，使在隔離道的黏合金屬層將 會只受熱一次。[0013] Another object of the present invention is to distort the stress generated in each grain region to be irradiated, directly affecting the surrounding grains, and preventing the structure of the crystal layer from being damaged' to increase the yield of the crystal grains. : a J 10* ψ% The present invention solves the technical problem; the case is to provide a support substrate applied to a conversion substrate, and a support substrate and an epitaxial layer to be provided with an adhesive metal layer Before the bonding, the epitaxial layer etching defines an isolation channel around each of the die regions, and an isolation region between the adjacent isolation channels is provided. Wherein, the pitch of the grain region is defined by two adjacent isolation channels and an isolation region therebetween, the width of the isolation channel is (micrometer, and the width of the isolation region is 10//m~10 〇 from m. [0014] By the foregoing, two isolation tracks are formed in each adjacent die section, 098136259 Form No. A0101, page 6 / 18 pages 0982062141-0 201115780, and an isolation region, so when the support substrate is bonded through After the metal layer is combined with the epitaxial layer, when the entire conversion substrate is heated by laser carpet scanning to peel the conversion substrate from the epitaxial layer, when the laser passes through the hollow region of the reticle, the conversion substrate is irradiated. The irradiation area of the laser only irradiates the isolation track and the isolation area around the grain area, so even in the grain area around the conversion substrate, only the isolation area around the grain area is double-irradiated. The isolation track around each die area will only have one chance of illumination, so that the bonded metal layer in the isolation track will only be heated once.

[0015] 因為被照 ϋϋΜΐι—^·:.[0015] Because it is taken ϋϋΜΐι—^·:.

[0016][0016]

且，在激光照射每一晶， ，與其周圍的隔離區都在在 的晶粒H 4纟肖^卜應力冑織—所產生相 反的應力相抵消，減輕磊晶層中每一晶受到應力而 產生的結構破壞。 本發明的優點相較習知ft舖慕df細透過每-相鄰 的晶粒區間形成的播_光照射只會對 晶粒區周圍的隔離道輿隔 <區懸所以在每一個晶 射的晶粒區 以被照射 粒區周邊的隔離道都將只會有一次照射機會，在隔離道 的黏合金屬層將會只受熱一次，減少數光對黏合金屬層 結構的破壞，導致LED的結構遭到破壞^ [0017] 相對於第US7202141案所揭露的技術，該習知技術並 未有本發明所定亦由未腐蝕之磊晶層所形成的隔離區， 亦即習知技術並未有作為保護金屬基材用途之碎化嫁隔 離區。 098136259 表單编號A0101 第7頁/共18頁 0982062141-0 201115780 [0018] 另’習知技術雷射光由於沒有隔離區的存在，其會照 射多個砷化鎵構成的照設區，而本案則僅涵蓋單一晶粒 區’因此透過每一相鄰的晶粒區間形成的隔離區，在激 光照射每一晶粒區時，藉由被照射的晶粒區周圍的隔離 區所產生的向外應力’與被照射之晶粒區所產生的向外 應力互相抵消，減輕磊晶層中每一晶粒區被激光照射所 產生的應力破壞結構。 【實施方式】 兹有關本發明的詳細内容及技術說明，現以實施例來 作進一步說明，但應盼麟專康，.铱.箏實施例僅 為例示說 明之用’而不應被解釋為本 請參閱圓5，本發明係現有%二極體激光 剝離之方法，發光二極體激光剝離之方法在實施上，係 先在一轉換基板100(例如藍寶石基板)上依序形成發光用 的一磊晶層200。與習知發胃光一！!體激光到離之方法不同从丄 mtmeaum 的是’本發明將該磊晶層2岬轉咸串一隔離道22〇於 每一個晶粒區210用面，屋^相離'道220間設有未被 蝕刻’也是該磊晶層200材料的一隔離區230。因此，該 晶粒區210的間距是由二相鄰隔離道220與位於其中間的 隔離區230所定義而成。實施上，該隔離道220的寬度為1 ，該隔離區230的寬度為ΙΟ/zm〜1〇〇从m，該 隔離區230的寬度大於該隔離道220的寬度。 [0021] 然後，再將設有一黏合金屬層300的支持基板400與該 蠢晶廣200結合。 [0019} 〇 [0020] _ 098136259 然後’將一具有鏤空區（可以是圓形、矩形等形狀）的 表單編號A0101 第8頁/共18頁 0982062141-0 [0022] 201115780 光罩（圖中未示）鄰近該轉換基板1〇〇設置，且將激光5〇〇 穿過光罩的鐘空區並照射該轉換基板1()0，利用激光500 地毯式地掃描處理整塊轉換基板1〇〇加熱後，即可將該轉 換基板100剝離該磊晶層200，此時該磊晶層200的晶粒 區210透過該黏合金屬層3〇〇與該支持基板4〇〇結合。 [0023]Moreover, when each crystal is irradiated by the laser, the opposite stress generated by the grain in the isolation region is canceled, and the stress in each layer of the epitaxial layer is alleviated. The resulting structure is destroyed. The advantage of the present invention is that the ray-light irradiation formed by each contiguous grain interval is only separated from the isolation track around the grain region. The grain zone will have only one illumination opportunity for the isolation track around the irradiated grain zone. The adhesive metal layer in the isolation channel will only be heated once, reducing the damage of the light-bonded metal layer structure caused by the light, resulting in the structure of the LED. In the prior art, the prior art does not have the isolation region defined by the present invention and also formed by the unetched epitaxial layer, that is, the prior art does not have the same technique. [0017] In contrast to the technique disclosed in the Japanese Patent No. 7,202,141, the prior art does not have the isolation region formed by the unetched epitaxial layer. A shredded isolation zone that protects the use of metal substrates. 098136259 Form No. A0101 Page 7 of 18 Page 20962062141-0 201115780 [0018] Another technique of conventional laser light, because there is no isolation zone, will illuminate a plurality of gallium arsenide-based illumination zones, and the case Covering only a single grain region 'so that through the isolation region formed by each adjacent grain region, the outward stress generated by the isolation region around the irradiated grain region when the laser irradiates each grain region The outward stress generated by the irradiated grain region cancels each other, and the stress damage structure generated by the laser irradiation in each crystal grain region in the epitaxial layer is alleviated. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The detailed description and technical description of the present invention will now be further described by way of examples, but should be construed as the preferred embodiment of the invention. Please refer to the circle 5, the present invention is a method for laser stripping of the % diode, and the method of laser stripping of the LED is implemented by sequentially forming a light-emitting layer on a conversion substrate 100 (for example, a sapphire substrate). An epitaxial layer 200. With the knowledge of the stomach light one! The body laser is different from the method of 丄mtmeaum. In the present invention, the epitaxial layer 2 is turned into a salt-series one isolation channel 22, and the surface of each of the die regions 210 is used. There is an isolation region 230 that is not etched and is also the material of the epitaxial layer 200. Therefore, the pitch of the die region 210 is defined by two adjacent isolation tracks 220 and an isolation region 230 located therebetween. In practice, the width of the isolation channel 220 is 1, and the width of the isolation region 230 is ΙΟ/zm~1〇〇 from m, and the width of the isolation region 230 is greater than the width of the isolation channel 220. [0021] Then, the support substrate 400 provided with an adhesive metal layer 300 is bonded to the stray crystal 200. [0019] 〇 [0020] _ 098136259 Then 'will have a form with a hollowed out area (can be a circular, rectangular, etc.) form number A0101 page 8 / a total of 18 pages 0962062141-0 [0022] 201115780 mask (not shown The substrate is disposed adjacent to the conversion substrate, and passes the laser light 5〇〇 through the clock space of the reticle and illuminates the conversion substrate 1()0, and scans and processes the entire conversion substrate 1 by using the laser 500. After the heating, the conversion substrate 100 can be peeled off from the epitaxial layer 200. At this time, the die region 210 of the epitaxial layer 200 is bonded to the support substrate 4 through the adhesive metal layer 3 . [0023]

以矩形形狀的鏤空區為說明例，如圖6所示，當激光 500的照射區510位於該轉換基板1〇〇上的磊晶層2〇〇具有 對應鏤空區的晶粒區210時，因為每一相鄰的晶粒區21〇 間有二個隔離道220與一個滿離尋|30。因此，每一次的 激光500照射都只會照、射到要儎射.的甚粒區21〇，與談被 照射晶粒區210周圍的隔離孝^ p離道2 2 0 旁的隔離區230 ’而位於該隔離道 2 2 0不會被照射到。尤其對於該轉換基板i 〇 〇與該支持基 板400結合後產生的角邊翹曲處，當激光5〇〇穿過光罩的 晶粒區210也只有被照射晶 鎮空區並照射該轉換塞漱1|)0時|該轉換，板i 〇〇周邊的 _隔離區230會 "lODeffv 被激光500作二次照射，而^^|^^铋區21〇周邊的隔 離道220都將只會被激光5(Γ〇— :^照射的機會，也就是在 該些隔離道220的黏合金屬層3〇〇只會受熱一次。對於周 邊的晶粒區210而言，就算照射區51〇會有向轉換基板 100中心偏移的現象’本發明方法可以去除激光5〇〇對隔 離道220二次照射的機會，降低激光50〇對黏合金屬層 300材料的破壞。 [0024] 雖然’該些隔離區230承受二次照射的問題，但也因 為該些隔離區230在製成發光二極體的過程應用上並不會 0982062141-0 098136259 表單編號A0101 第9頁/共18頁 201115780 再被使用到，在該轉換基板100剝除後，再利用乾蝕刻方 式去除該些隔離區230即可，並不影響後續的發光二極體 製程。 [0025] 請再參閱圖7，另外在激光500照射使該晶粒區210產 生向外應力F1上’.本發明在激光500照射每一晶粒區21〇 時，因為被照射的晶粒區210，與其周圍的隔離區230都 在激光500的照射區510内’所以被照射的晶粒區21〇產 生的向外應力F1將會被周圍的隔離區230所產生相反的應 力F2相抵消’減輕磊晶層200中每一磊粒區210受到激光 5 0 0照射時所產生涛鴦Π破壤談邁粒;嚴钓〇結構。Taking a rectangular-shaped hollow region as an illustrative example, as shown in FIG. 6, when the irradiation region 510 of the laser light 500 is located on the conversion substrate 1A, the crystal grain region 210 corresponding to the hollow region has a grain region 210, because There are two isolation channels 220 and one full-discovery|30 between each adjacent die area 21. Therefore, each laser 500 irradiation will only be shot and shot into the very grain zone 21〇, and the isolation zone 230 around the illuminated grain zone 210 will be separated from the channel 2 2 0. 'And the isolation channel 2 2 0 will not be illuminated. Especially for the corner warpage generated after the conversion substrate i 结合 is combined with the support substrate 400, when the laser beam 5 passes through the die region 210 of the reticle, only the crystal grain vacant region is irradiated and the conversion plug is irradiated.漱1|)0°|This conversion, the _isolation area 230 around the board i 会 will be <lODeffv will be double-irradiated by the laser 500, and the isolation channel 220 around the ^^|^^铋 area 21〇 will only The opportunity to be illuminated by the laser 5 (Γ〇-:^, that is, the bonding metal layer 3 of the isolation channels 220 will only be heated once. For the surrounding grain region 210, even if the irradiation region is 51 The phenomenon that the center of the conversion substrate 100 is shifted 'The method of the present invention can remove the opportunity for the laser 5 二次 to illuminate the isolation channel 220 twice, and reduce the damage of the laser 50 〇 to the material of the adhesive metal layer 300. [0024] The isolation region 230 is subject to the problem of secondary illumination, but also because the isolation regions 230 are not used in the process of making the light-emitting diodes, and will not be used in the form of 0982062141-0 098136259 Form No. A0101 Page 9 / 18 pages 201115780 After the conversion substrate 100 is stripped, the dry etching method is used. The isolation region 230 can be removed without affecting the subsequent light-emitting diode process. [0025] Referring again to FIG. 7, the laser light 500 is irradiated to cause the grain region 210 to generate an outward stress F1. When the laser light 500 illuminates each of the crystal grain regions 21, since the irradiated crystal grain regions 210 and the surrounding isolation regions 230 are both in the irradiation region 510 of the laser light 500, the directions of the irradiated crystal grain regions 21 are generated. The external stress F1 will be offset by the opposite stress F2 generated by the surrounding isolation region 230. [Reducing the occurrence of the turbidity of each of the granules 210 in the epitaxial layer 200 when irradiated by the laser 50; Strict fishing structure.

[0026][0026]

假設晶粒區210的俯視為g專形其為L，而相 鄰晶粒區210的間距為區210產生 的向外應力F1等比於L2，而褲照射晶粒區210周圍的隔離 區230產生的向外應力F2等比於（L+2L’ ）2-L2。以 的向外應力F1被周面··的隔华衡生的應力F2抵消約 邙142)/邙1)=<4必0-316)轉%0^似等於20%。It is assumed that the grain region 210 has a plan view of the g shape which is L, and the spacing of the adjacent grain regions 210 is such that the outward stress F1 generated by the region 210 is equal to L2, and the pants illuminate the isolation region 230 around the die region 210. The resulting outward stress F2 is equal to (L+2L')2-L2. The outward stress F1 is offset by the stress F2 generated by the circumference of the circumference. 邙 142) / 邙 1) = < 4 must be 0-316) The %0 ^ turns to be equal to 20%.

[0027] [0028] [0029] [0030] [0031] 098136259 【圖式簡單說明】 圖1為習知發光二極體激光剝離之方法的示意圖。 圖2為習知激光照射區與晶粒區的示意圖。 圖3為該轉換基板不同區域的照射區與晶粒區的相對位置 示意圖15 圖4為習知晶粒區被激光照射時的應力示意圖。 圖5為本發明發光二極體激光剝離之方法的示意圖。 表單编珑A0101 第10頁/共18頁 0982062141-0 201115780 [0032] 圖6為本發明激光照射區與晶粒區的示意圖。 [0033] 圖7為本發明晶粒區被激光照射時的應力示意圖。 【主要元件符號說明】[0028] [0030] [0030] [0031] 098136259 [Simple Description of the Drawings] FIG. 1 is a schematic diagram of a conventional method of laser stripping of a light-emitting diode. 2 is a schematic view of a conventional laser irradiation zone and a grain zone. Fig. 3 is a view showing the relative positions of the irradiation region and the crystal grain region in different regions of the conversion substrate. Fig. 4 is a schematic view showing the stress when the conventional crystal grain region is irradiated with laser light. Fig. 5 is a schematic view showing a method of laser stripping of a light-emitting diode according to the present invention. Form Compilation A0101 Page 10 of 18 0982062141-0 201115780 [0032] FIG. 6 is a schematic view of a laser irradiation zone and a grain zone of the present invention. 7 is a schematic view showing stress when the crystal grain region is irradiated with laser light according to the present invention. [Main component symbol description]

[0034] FI、F2 :應力 [0035] L :邊長 [0036] 2L·’ ：間距 [0037] 100 :轉換基板 [0038] 2 0 0 .蠢晶層 [0039] 210晶粒區 [0040] 220 :隔離道 [0041] 230 :隔離區 [0042] 300 :黏合金屬層 [0043] 400 :支持基板 [0044] 5 0 0 .激光 [0045] 510 :照射區[0034] FI, F2: stress [0035] L: side length [0036] 2L·': pitch [0037] 100: conversion substrate [0038] 2 0 0 . stupid layer [0039] 210 grain area [0040] 220: isolation channel [0041] 230: isolation region [0042] 300: adhesive metal layer [0043] 400: support substrate [0044] 500. laser [0045] 510: irradiation area

098136259 表單編號A0101 第11頁/共18頁 0982062141-0098136259 Form No. A0101 Page 11 of 18 0982062141-0

Claims (1)

201115780 七、申請專利範圍： 1 . 一種發光二極體激光剝離之方法，係應用於一轉換基板上 形成一蠢晶層，且設有一黏合金屬層的一支持基板與該轰 , 晶層結合後的該轉換基板剝離；其特徵在於： 將設有該黏合金屬層的支持基板與該磊晶層結合前，該磊 晶層蝕刻定義出一隔離道於每一個晶粒區周圍，且相鄰二 隔離道間設有未被蝕刻的磊晶層形成的一隔離區； 藉此，激光每次照射區含蓋單一晶粒區，被照射晶粒區周 圍的隔離道，與在被照射晶粒區周圍的隔離區。 2.如申請專利範圍第1項之發光二極饉激光剝離之方法，其 中，該晶粒區的間距是由二相鄰播離道輿其中間的隔離區 所定義而成。 3 .如申請專利範圍第1項之發光二極體激光剝離之方法，其 中，該隔離道的寬度為1微米~10微米》 4.如申請專利範圍第1項之發光二極體激光剝離之方法，其 中，該隔離區的寬度為10微米〜100微米〇 ’m.一' 參 098136259 表單編號A0101 第12頁/共18頁 0982062141-0201115780 VII. Patent application scope: 1. A method for laser stripping of a light-emitting diode, which is applied to a conversion substrate to form a stupid layer, and a supporting substrate provided with a bonding metal layer is combined with the blasting layer and the crystal layer. The conversion substrate is peeled off; and the epitaxial layer etching defines an isolation channel around each of the die regions before the bonding substrate provided with the bonding metal layer is bonded to the epitaxial layer, and adjacent to An isolation region formed by the unetched epitaxial layer is disposed between the isolation channels; thereby, each laser irradiation region covers a single crystal grain region, the isolation track around the grain region is irradiated, and the irradiated crystal region The surrounding area. 2. The method of claim 2, wherein the spacing of the grain regions is defined by an isolation region between two adjacent broadcast channels. 3. The method of laser stripping of a light-emitting diode according to claim 1, wherein the width of the isolation track is from 1 micrometer to 10 micrometers. 4. The laser diode stripping of the light-emitting diode according to claim 1 The method wherein the width of the isolation region is 10 micrometers to 100 micrometers 〇 'm. one' gin 098136259 form number A0101 page 12 / total 18 pages 0962062141-0