TWI374513B - - Google Patents

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TWI374513B
TWI374513B TW97136281A TW97136281A TWI374513B TW I374513 B TWI374513 B TW I374513B TW 97136281 A TW97136281 A TW 97136281A TW 97136281 A TW97136281 A TW 97136281A TW I374513 B TWI374513 B TW I374513B
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Taiwan
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cover
semiconductor die
stage
semiconductor
suction opening
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TW97136281A
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Chinese (zh)
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TW201001614A (en
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Okito Umehara
Shinichi Sasaki
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Shinkawa Kk
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Die Bonding (AREA)

Description

13745131374513

V 九、發明說明： 【發明所屬之技術領域】 本發明係關於半導體晶粒之拾取裝置之構造及拾取方 法0 【先前技術】 半導體晶粒係將6叶或8忖大小之晶圓切割成既定大 小來加以製造。切割時，為防止所切割之半導體晶粒散落， 在背面貼付點貼性之保持膠帶，藉由切割鑛等從表面側切 斷晶圓。此時，貼付於背面之保持膠帶雖被少許切入，但 不切斷而成為保持各半導體晶粒之狀態。接著，被切斷之 各=導體晶粒係從保持膠帶逐個被拾取，然後送到晶粒焊 接等其後之製程。 以往’作為從黏貼性之保持片拾取半導體晶粒之方 ，，大多使㈣針之方法（例如參照專利文獻丨之圖Μ)。 =係在以筒夾㈣let)吸引半導體晶粒之狀態，從施有向周 =之拉伸力之保持片下側，#由頂針頂起半導體晶粒之中 性之於Γ持片之拉伸力，從半導體晶粒剝離黏貼 /'，片，用同夾拾取半導體晶粒之方法。 =而’此藉由頂針之方法，若半導體晶粒厚度變薄， 就會有因頂起而使半導體晶粒破裂之問題，近年來，使用 於缚型半導體晶粒之拾取步驟變得困難起來。 於取：案不使用頂針而從黏貼性之保持片分離及 半導體晶粒之方法。例如，專利文獻！中有提案在具 7 1374513 備複數個吸引孔之載台之吸引孔上搭載欲拾取之半導體晶 粒在使該半導體晶粒被吸引保持於筒夾之狀態下，使吸 引孔成真空，將保持片吸入各吸引孔中使其變形從半導 體晶粒剝離與吸引孔對應部分之保持片後，使載台水平移 動或轉動，藉此從半導體晶粒剝離未剝離而殘留部分之保 持片的方法（參照專利文獻1之圖1〜圖4) » 又，專利文獻1中另有提出於載台表面設置較欲拾取 之半導體晶粒之寬度為窄之突出部，於突出部周邊之載台 表面設置吸引孔，當拾取半導體晶粒時，纟突出部上以從 突出部露出之方式搭載欲拾取之半導體晶粒，藉由筒夹進 行吸附保持，用吸引孔將保持片真空吸引至下方且從半 導體晶粒剝離從突出部分露出部分之保持[然後，使仍 以筒夹吸附半導體晶粒之突出部相對於载台表面水平移 動’以剝離半導體晶粒其餘部分之保持片之方法（參照專利 文獻1之圖9〜圖1 〇)。 專利文獻1 :日本專利第3209736號說明書 【發明内容】 專利文獻1所揭示之方法，雜你 万凌雖係使吸引孔形成真空， 將保持片吸入吸引1’然後從半導體晶粒制離保持 厂:保持片從半導體晶粒剝離後，由於會覆蓋吸引孔表 面，因此將位於吸引孔上方讲走4, 匕上方近處之保持片加以剝離後，i 法從吸引孔周圍部分吸入空氣。 …、 ^ , 乳因此，雖能藉由吸引將位 於吸引孔上方近處之保持月知 符片加以㈣，但吸引孔周圍之部 8 1374513 分無法藉由吸引孔之真空吸引加以剝離而與半導體晶粒 黏貼之狀態殘留下來（參照專利文獻丨之圖丨、圖2)。明— 方面，當使载台移動以進行此未剝離部分之保持片之=離 時，殘留部分面積越少施加於半導體晶粒之力越少，: 制半導體晶粒之損壊。鈇而 这相分 月 八 祖之相& &而，右想減少吸引孔之未剝離部 -’就必須使吸引孔為符合拾取之半導體大小之大型孔。 二大：藉由大的吸引孔一次吸引保持片，當保持片之黏 主有時會對半導體晶粒施加大力。尤其是由於近 半導體晶粒變薄，強度變低，因此有時會因該大力 破裂或變形。因此，專利文獻所揭示之方 用大的吸引多丨，A „^ §吸引時，會對半導體晶粒施加大力，若 力二、的吸引孔，當載台移動時，會對半導體晶粒施加大 力，當剥離保持片時’無法抑制施加於半導體晶粒之 有時招致半導體晶粒損壞之問題。 揭示於專利文獻1 一 部周邊之另方法使僅配置於突出 分之半導體晶粒之伴持片力二4藉此將從突出部露出之部 片之拉伸力進-甘 剝離，由於藉由施加於保持 因此為確眘、餘部分之半導體晶粒之保持片之剝離， 突出部之移動：：：片之剝離，必須加高突出部高度，當 部會撞上該半導。鄰接之半導體晶粒時，由於有時突出 度受限制二體晶粒而損壞半導體晶粒，因此突出部高 …、法確實剝離保持片之問題。 因此，本發明之目 中，當剝離保持 At在於’在半導體晶粒之拾取裝置 寻此抑制施加於半導體晶粒的力並容 1374513 易拾取半導體晶粒。 本發明之半導體晶粒之拾取裝置，用以拾取貼付於保 持片之半導體晶粒，其特徵在於，具備：圓筒形載台含 緊貼面，該緊貼面係緊貼於貼付保持片之半導體晶粒面之 反面；吸引開口，設於緊貼面，與拾取之半導體晶粒大致 同一寬度，從載台内周側向外周側直線狀延伸；蓋，與吸 引開口寬度大致同一寬度，且以關閉吸引開口側之前端能 從緊貼面自由前進之方式設於載台，沿緊貼面滑動以開閉 吸引.開口，當使蓋前端從緊貼面前進時，蓋之頂起保持片 的面係從蓋前端側向蓋開啟側之後端側向下傾斜；滑動用 槽，從緊貼面凹陷蓋之厚度，與蓋大致同一寬度，從蓋開 啟側之吸引開口端，至蓋在與載台外周之圓筒面無干涉之 位置關閉吸引開口之狀態下之蓋後端位置之載台内周側位 置向載台外周面延伸；傾斜面，從載台外周側端之滑動用 槽底面向緊貼面之相反侧延伸；以及筒夾，用以吸附半導 體晶粒；當拾取半導體晶粒時，使蓋前端從緊貼面前進， 頂起保持片與半導體晶纟’一彡使蓋之頂起保持片之面之 反面與滑動用槽底面與傾斜面之邊緣接觸、一邊使蓋滑動 而依序開啟吸引開口，將保持片依序吸引至已開啟之=引 開口，從拾取之半導體晶粒依序剝離保持片，並將半導體 晶粒依序％附至在拾取之半導體晶粒之上方近處待機 夾。 同 本發明之半導體晶粒之拾取裝置中，較佳係傾斜面對 緊貼面之傾斜角度係較蓋之頂起保持片之面之反面對緊貼 10 ⑴13 面之傾斜角度為大，較佳係具備段部，從傾斜面沿緊貼面 L伸到載台外周面為止；含邊緣與段部之載台外周側端之 ί緊貼面之角度較蓋之頂起保持片面之反面對緊貼面之 、斜角度4大，較佳係傾斜面係相對於緊貼 的平面。 且月 =發明之半導體晶粒之拾取裝置中，較佳係具備滑 女裝有於吸引開口寬度方向延伸的鎖藉由設於載台 内部之滑件驅動機構於吸㈣口之延伸方向滑動，並且相 對於緊貼面進退；蓋備有從前端朝關閉吸引開口之側突出 的臂，透過該臂而能自由轉動地安裝於滑件的銷上。 本發明之半導體晶粒之拾取方法，係使用半導體晶粒 之拾取裝置來拾取貼付於保持片之半導體晶粒；該半導體 =之拾取裝置具備··圓筒形栽台，含緊貼面，該緊貼面 係緊貼於貼付保持片之半導體晶粒面之反面；吸引開口， 設於緊貼面，以與拾取之半導體晶粒大致同一寬度，從載 台内周側向外周側直線狀延伸；i，與吸引開口寬度大致 同—寬度，且設於載台以使關閉吸引開口之側之前端能從 緊貼面自由前進，沿緊貼面滑動以開閉吸引開口，當使蓋 前端從緊貼面前進時，蓋之頂起保持片的面係從蓋前端側 =盍開啟側之後端側向下傾斜；滑動用槽，從緊貼面凹陷 孤之厚度與蓋大致同-寬度’從蓋開啟側之吸引開口端， 至蓋在與載台外周之圓筒面 圓同面無干涉之位置關閉吸引開口之 狀態下之蓋後端位置之巷a由田，， (戟σ内周側位置向载台外周面延 伸；傾斜面，從載台外固相“山+ π / m 口卜周側鳊之滑動用槽底面向緊貼面之 1374513 相反側延伸；以及筒夾，用以吸附半導體晶粒； 於’具有：對準步驟，使拾取之半導體晶粒之一端對 閉狀態之蓋前端，使蓋之寬度方向位 办 度方向位置-致，·以及拾取步驟，使蓋 · 頂起保持片與半導體晶粒，邊使蓋之頂起保持片之面面則之進反 面與滑動用槽底面與傾斜面之邊緣接觸 2 序開啟吸引開口，將保持片依序吸引至已開 :’從拾取之半導體晶粒依序剝離保持片： :粒一在拾取之半導體晶粒之上方近處待機之: 時：=二半導體晶粒之拾取裝置_ ’當剝離保持片 晶粒=抑制施加於半導體晶粒之力並容易拾取半導體 【實施方式】 以下，參照圖式說明本發明之 本發明半導體晶粒之拾^ 在說明 具。 月 先說明晶圓與晶圓保持 如圖1所示，晶圓1 1於咎 12,保持 ；者面貼付有黏貼性之保持片 過保持片糸安裝於金屬製的環⑴s曰曰圓U係如此透 著，如圖;所以安裝於金屬製的環13之狀態加以處理。接 面側切斷而开曰曰圓U係在切斷步驟，被切割鋸等從表 間，形成t形成各半導體晶粒15。在各半導體晶粒15之 .成切割時所切出之切入間隙U。切入間隙14之深度 12 ，雖從半導體晶粒15到達保持片12 _ *被:斷’各半導體晶粒15係被保=保::保持片12 因此，安裝有保持片12 5 2保持。 圖3所示安裝於晶圓保持具i0。：之半導體晶粒15係如 緣部之圓環狀擴張環16與 BB $持具1G具備具有凸 上之環塵板17。環屋板17 Γ去3固定於擴張環16之凸緣 擴張環…緣進退之方向:未動圖 置有半導體晶粒15之晶圓徑為大，=張核16之内徑較配 度，凸緣位於擴張環16側、張環16備有既定厚 *從保持…開之方向=朝方㈣ 持片12側之外周為在把保持片12安 ：：16之保 平穩拉伸保持片12之曲面構成。又二、…16時，能 藉由未圖示之晶圓保持且 aa®保持具10係可 之方向移動。 、方向驅動部沿保持片12之面 如圖3(b)所示，貼付有半導體晶粒b之 设定於擴張環16之前成為大致平面狀態。… 在 圖4係表示半導體晶粒之拾取裝置 圖4係表示將貼付於保持片12 圖，又 導體晶粒之拾取| w 1ΛΛ 導體日日粒15設定於半 降至環13上7 之狀態。此狀態下，環麗板17下 .. ，將裱13挾於與擴張環16之凸緣 擴張環16之接觸保持片12之上面與凸=緣之間。由於 因此只要環13被推到凸緣面，即代表保持之間妹差， 2上部之曲面被拉伸擴張環16上面與凸緣丨石f :環 量。因此，在固定於擴張環^伴持Z差部分之 保符片1 2有從保持片 12之中心向周圍之拉伸力作用 片12延長.，因此貼付於保持片 之間隙擴大》 。又’由於此拉伸力使保持 】2上之各半導體晶粒I 5間 在晶圓保持具1〇上安_ 保持具⑺移動之晶圓保牲f 保持片12的面使晶圓 、寺一水平方向驅動邱79 曰ill /2技 具水平方向驅勤部72,例如可藉一 圓保持 輪，將晶圓保持具⑺朝水平方部之馬達與齒 外部之馬達等之驅動源，使曰门動者，亦可藉由設置於 向移動者。又力/ 曰圓保持具10沿導件於XY方 粒】S 圓保持具10之上部設置有使半導體曰 粒15吸附移動之筒失1 有使+導體曰曰 半導體晶粒15吸附至吸附備有吸附孔19’用以將 裝置17 ^又γ a 各吸附孔丨9係連接於真空 衣置1 。又，在晶圓保且 么20孫莊a拍 一 1〇之下侧設置有載台20，載 ，、曰載台上下方向驅動機構73，相對於仵持片12 被驅動於上下方向(進退方 相對於保持片12 例如可辟由#罢& )載σ上下方向驅動機構73， m 之馬達與齒輪’於上下方向驅動載 口20者’亦可藉由設置於外 風 2。沿導件於上下方向移動者：之馬達專之驅動源’使載台 如圖5所示，載台20具備：圓筒形貧體2卜 ΠΓ::持片12之緊貼面22;設置於與筐體心之J = 基體部&以及一 ^ 載…基體：2==:部之滑件驅動機構_。 π ... 係女裝於未圖不之載台固定部。吸引 於緊貼面22,係與圖4所示之拾取之半導體 曰日粒15大致同一宮痒 〒肢 寬度，其長度較半導體晶粒15為長，從 14 1374513 载台20之内周側向外周側直線狀延伸。吸引開口 4i上安 裝有蓋23，其係與吸引開口 4 1之寬度大致同一寬度，且沿 吸引開口 4 1之延伸方向滑動以開閉吸引開口 41。蓋23之 沿滑動方向關閉蓋吸引開口 41之側係前端23a，蓋23開啟 侧之端係後端23c。蓋23之側面23b與吸引開口 41之側面 41b構成滑動面。若吸引開口 41在緊貼面22與欲拾取之半 導體晶粒15大致同一寬度’則亦可構成為於内部設置段 差’於該段差部分設置與載台2〇連通之狹縫。 如圖ό、圖7所示，蓋23之前端23a在關閉吸引開口 41時’被推至接觸位於吸引開口 41之載台内周侧之端面 41a ^蓋23之前端23a係凸向關閉吸引開口 41側之曲面， 推動盖23之則端23a至接觸之吸引開口 41之端面41a備有 /口蓋23之刖％ 23a之曲面的曲面。曲面可為圓筒面，可為 、.且口複數半徑之圓筒面者，亦可為以其他形狀之曲面構成。 又在蓋23之前端23a接觸側之吸引開口 41之兩角部 具有縱槽364，其係從吸引開口 41之側面41b向吸引開口 之寬度方向大出，從緊貼面22向載台2〇之内面朝上下 向I伸用以吸引保持片12。縱槽364係由連接吸引開 大致270度之扇形圓筒面構成，在吸引開口々I之 兩角部’與各縱槽364之圓筒面接觸之切線500係向蓋23 成為關閉之方向，較端面4U突出到端面4U成為圓筒面之 切線的位置為止》 如圖7(a)所示，當蓋23為關閉時，由於蓋23之前端 23a與端面41&接觸’因此在蓋23為關閉之狀態下，在蓋 15 1374513 23、吸引開口 41之兩角部’具有大致27〇度之扇形圓筒面 之縱槽364係連通緊貼面22與筐體21之内部。又，如圖 7(b)所示’當使半導體晶粒15之一端15a對準吸引開口 41 之端面41a或蓋23之前端23a時，半導體晶粒Η之一部分 會從蓋23之前端23a露出，大致9〇度扇形之斜線部分係位 於縱槽364之上。 如圖8所示，蓋23在關閉吸引開口 41時，位於保持 片12側之表面係與緊貼面22大致同一面。在蓋23表面之 周圍設有倒角部分23e，當蓋23關閉吸引開口 41時，在緊 貼面22與蓋23之間形成小的V字形槽。又，如先前所說 明，吸引開口 41之寬度與蓋23之寬度與半導體晶粒15之 寬度均大致相同，吸引開口 41之各側面41 b與蓋23之各 側面23b係以能滑動之方式接觸。 如圖5所示，載台20具備：滑動用槽22a，從緊貼面 22凹Pq蓋23之厚度’以與盖23大致同一寬度，從蓋23開 啟側之吸引開口 4 1之端向載台20之外周側延伸；以及傾 斜面22b ’連接於滑動用槽22a之底面22a，。滑動用槽22a 之侧面22h係與吸引開口 41之側面41b同一面，蓋23之 側面23b與滑動用槽22a之側面22h係構成滑動面。滑動用 槽22a之底面22a’係與緊貼面22大致平行，在與載台2〇 外周之圓筒面無干涉之位置，蓋23延伸到稍較關閉吸引開 口 41之狀態之蓋23之後端23c之位置位於載台内周側位置 之端部22c為止。端部22c係直線狀，蓋23之後端23c係 在蓋23關閉之狀態，較滑動用槽22a之端部22c朝載台20 16 1374513V IX. OBJECTS OF THE INVENTION: TECHNICAL FIELD The present invention relates to a structure and a pick-up method of a semiconductor die pick-up device. [Prior Art] A semiconductor die is used to cut a 6- or 8-inch wafer into a predetermined wafer. The size is to be manufactured. In order to prevent the diced semiconductor crystal grains from being scattered during the dicing, the adhesive tape is attached to the back surface, and the wafer is cut from the surface side by cutting ore. At this time, the holding tape attached to the back surface is cut in a small amount, but the state in which the respective semiconductor crystal grains are held is not cut. Then, each of the cut conductor dies is picked up one by one from the holding tape, and then sent to a subsequent process such as grain bonding. Conventionally, as a method of picking up a semiconductor crystal grain from an adhesive sheet, a method of (4) a needle is often used (for example, refer to the patent document). = in the state of attracting the semiconductor crystal grains by the collet (four) let, from the lower side of the holding sheet to which the tensile force is applied to the circumference =, the stretching of the semiconductor crystal grains by the thimble is neutral to the stretching of the holding sheet Force, peeling adhesive/film from the semiconductor die, and using the same clip to pick up the semiconductor die. If the semiconductor die thickness is thinned by the thimble method, there is a problem that the semiconductor crystal grain is broken due to the jacking. In recent years, the picking step for the bonded semiconductor die has become difficult. . In the case of the method, the method of separating the semiconductor wafer from the adhesive holding sheet without using the thimble. For example, the patent literature! It is proposed to mount a semiconductor die to be picked up on a suction hole of a stage having a plurality of suction holes, and to hold the semiconductor die in a state in which the semiconductor die is attracted to the collet, and the suction hole is vacuumed and held. A method in which a sheet is sucked into each of the suction holes to be deformed from the semiconductor die and the holding piece corresponding to the suction hole is removed, and the stage is horizontally moved or rotated to peel off the remaining piece of the holding piece from the semiconductor die ( Referring to FIG. 1 to FIG. 4 of Patent Document 1) Further, Patent Document 1 proposes to provide a projection having a narrower width than the semiconductor die to be picked up on the surface of the stage, and to provide a surface of the stage around the protrusion. When the semiconductor die is picked up, the semiconductor die to be picked up is exposed from the protruding portion, and is sucked and held by the collet, and the holding piece is vacuum-drawn to the lower side and the semiconductor is sucked by the suction hole. The grain peeling is maintained from the exposed portion of the protruding portion [and then the protrusion of the semiconductor crystal grain still adsorbed by the collet is horizontally moved relative to the surface of the stage" to peel off the semiconductor crystal The method of holding the remaining portion of the sheet (refer to FIG. 1 of Patent Document 1 9~ FIG square). Patent Document 1: Japanese Patent No. 3209736 [Invention] The method disclosed in Patent Document 1 discloses that although the vacuum is formed in the suction hole, the holding piece is sucked into the suction 1' and then removed from the semiconductor die. After the release sheet is peeled off from the semiconductor die, since the surface of the suction hole is covered, the holding piece located above the suction hole and the vicinity of the top of the crucible is peeled off, and then the air is sucked from the portion around the suction hole. ..., ^, milk, therefore, although it is possible to attract the retaining piece of the moon near the suction hole by suction (4), the portion around the suction hole 8 1374513 cannot be peeled off by vacuum suction of the suction hole and the semiconductor The state of the die adhesion remains (refer to the figure of the patent document, Fig. 2). In the meantime, when the stage is moved to perform the holding of the unpeeled portion, the less the residual portion area, the less force is applied to the semiconductor die: the loss of the semiconductor die.这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 而 而 而 而 而 而 而 而 而 ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ The second one: the holding piece is attracted once by the large attracting hole, and the sticking of the piece sometimes exerts a strong force on the semiconductor die. In particular, since the near-semiconductor crystal grains are thinned and the strength is lowered, the crack or deformation is sometimes caused by the strong. Therefore, the method disclosed in the patent literature uses a large attraction, and when A „^ § is attracted, a strong force is applied to the semiconductor crystal grains, and if the attraction hole is applied, when the stage moves, the semiconductor crystal grains are applied. Vigorously, when the holding sheet is peeled off, it is impossible to suppress the problem that the semiconductor crystal grains are sometimes damaged due to the application of the semiconductor crystal grains. Another method disclosed in the periphery of Patent Document 1 allows the semiconductor crystal grains to be disposed only in the protruding portions. The sheet force 2 is thereby peeled off by the stretching force of the sheet exposed from the protruding portion, and the movement of the protruding portion is caused by the peeling of the holding piece of the semiconductor die which is carefully held by the holding portion. ::: peeling of the sheet, the height of the protrusion must be raised, and the semiconductor will hit the semiconductor. When the semiconductor crystal grains are adjacent, the semiconductor crystal grains are damaged due to the limited protrusion of the two-body crystal grains, so the protruding portion High, the method does strip the problem of holding the sheet. Therefore, in the object of the present invention, when the peeling is maintained at At, the pick-up device in the semiconductor die seeks to suppress the force applied to the semiconductor die and accommodate 1374513 Picking up a semiconductor die. The semiconductor die pick-up device of the present invention is for picking up a semiconductor die attached to a holding chip, and is characterized in that: the cylindrical carrier has a close-contact surface, and the close-fitting surface is closely attached The suction opening is disposed on the opposite side of the semiconductor die surface of the holding piece; the suction opening is disposed on the close surface, and has substantially the same width as the picked semiconductor die, and extends linearly from the inner peripheral side to the outer peripheral side of the stage; the cover and the opening width The same width is provided on the stage so that the front end of the suction opening side can be freely advanced from the abutting surface, and is slid along the abutting surface to open and close the opening. When the front end of the cover is advanced from the abutting surface, the cover is The surface of the lifting and holding piece is inclined downward from the front end side of the cover toward the rear end side of the cover opening side; the sliding groove has a thickness which is recessed from the abutting surface, and has substantially the same width as the cover, and the suction opening end of the cover opening side, The inner circumferential side of the stage at the rear end position of the cover in the state where the cover is closed at the position where the suction opening is not interfered with the cylindrical surface of the outer periphery of the stage extends toward the outer peripheral surface of the stage; the inclined surface is from the outer peripheral side of the stage slip The bottom of the movable groove extends toward the opposite side of the abutting surface; and the collet is for adsorbing the semiconductor die; when picking up the semiconductor die, the front end of the cover is advanced from the close surface, and the holding piece is lifted with the semiconductor wafer The back surface of the top surface of the cover is brought into contact with the bottom surface of the sliding groove and the edge of the inclined surface, and the cover is sequentially opened to open the suction opening, and the holding piece is sequentially attracted to the opened opening. The semiconductor die sequentially peels off the holding piece, and sequentially attaches the semiconductor die to the standby clip near the picked semiconductor die. In the picking device of the semiconductor die of the present invention, the inclined surface is preferably The angle of inclination of the abutting surface is larger than the angle of the surface of the top surface of the cover which is close to the surface of the holding piece 10 (1) 13 , and preferably has a step portion extending from the inclined surface to the facing surface L Up to the outer circumference of the platform; the angle of the sturdy surface of the outer peripheral side of the stage including the edge and the section is larger than the angle of the opposite surface of the cover, and the inclined surface is preferably 4 Relative to the close plane. And in the invention, the semiconductor wafer pick-up device of the invention is preferably provided with a lock that extends in the width direction of the suction opening, and the slider driving mechanism provided inside the stage slides in the extending direction of the suction (four) port. And moving forward and backward with respect to the contact surface; the cover is provided with an arm protruding from the front end toward the side close to the suction opening, and is rotatably attached to the pin of the slider through the arm. The semiconductor wafer pick-up method of the present invention picks up a semiconductor die attached to a holding chip by using a semiconductor die pick-up device; the semiconductor=pickup device includes a cylindrical planting device, and includes a close surface, The abutting surface is in close contact with the opposite surface of the semiconductor die surface of the attaching holding piece; the suction opening is provided on the abutting surface so as to extend substantially linearly from the inner peripheral side of the stage to the outer peripheral side of the stage. ; i, substantially the same width as the width of the suction opening, and disposed on the stage so that the front end of the side closes the suction opening can freely advance from the abutting surface, and slides along the abutting surface to open and close the suction opening, when the front end of the cover is tight When the veneer advances, the surface of the top of the cover that holds the piece is inclined downward from the front end side of the cover = the opening side and the rear end side; the sliding groove is recessed from the abutting surface to a thickness substantially the same as the width of the cover from the cover Opening the suction opening end of the cover to the position of the rear end position of the cover in the state where the cover is closed at the same position as the cylindrical surface of the outer circumference of the stage without interference, and the lane a is closed, (戟σ inner circumference side position) Extension of the outer circumference of the stage The inclined surface extends from the outer solid phase of the stage "mountain + π / m mouth side of the sliding side of the groove with the groove bottom facing the opposite side of the 1374013; and the collet for adsorbing the semiconductor crystal grain; In the aligning step, the one end of the picked semiconductor die is closed to the front end of the cover, and the position of the cover in the width direction is adjusted, and the pickup step is performed to cause the cover to lift the holding piece and the semiconductor die. The top surface of the cover is held by the surface of the holding piece, and the bottom surface of the sliding groove is in contact with the edge of the sliding groove and the edge of the inclined surface. 2 The opening opening is opened, and the holding piece is sequentially attracted to the opened: 'From the semiconductor die picked up sequentially Peel-off holder: : Particles stand close to the semiconductor die above the pick-up: Time: = two semiconductor die pick-up device _ 'When peeling the die grain = suppressing the force applied to the semiconductor die and easily picking up Semiconductor [Embodiment] Hereinafter, a semiconductor die of the present invention will be described with reference to the drawings. The wafer and wafer are first shown in Fig. 1. The wafer 1 is held at 咎12. Face-to-face stickers The retaining piece of the adhesive sheet is attached to the metal ring (1) s. The round U is so transparent as shown in the figure. Therefore, it is attached to the metal ring 13 and processed. The joint side is cut and opened. In the cutting step, the cutting saw or the like is formed between the surfaces by the dicing saw or the like to form each of the semiconductor crystal grains 15. The cut-in gap U cut out at the time of cutting each of the semiconductor crystal grains 15. The depth of the cut-in gap 14 is 12 Although the semiconductor wafer 15 reaches the holding piece 12 _ * is: "the semiconductor die 15 is protected": the holding piece 12 is thus mounted with the holding piece 12 5 2 held. Figure 3 is mounted on the crystal The circular holder i0.: the semiconductor die 15 is such that the annular expansion ring 16 and the BB $ holder 1G of the rim are provided with a raised dust plate 17. The ring plate 17 is fixed to the expansion ring 16 The flange expansion ring is in the direction of advancement and retreat: the wafer diameter of the semiconductor die 15 is large in the unactuated image, the inner diameter of the core 16 is relatively proportional, and the flange is located on the side of the expansion ring 16 and the ring 16 is prepared. There is a predetermined thickness * from the direction of holding ... the direction of the opening = the side of the side (four) The side of the holding piece 12 is the flat stretch holding piece 12 of the holding piece 12::16 Curved surface. On the other hand, at 16 o'clock, it can be held by a wafer (not shown) and moved in the direction of the aa® holder. The direction driving portion is along the surface of the holding piece 12, as shown in Fig. 3(b), and the semiconductor die b is placed in a substantially planar state before being set in the expansion ring 16. Fig. 4 shows a pickup device for a semiconductor die. Fig. 4 is a view showing a state in which the carrier wafer 12 is attached to the holder 12, and the conductor wafers of the conductors are placed on the ring 13 at a half. In this state, the ring plate 17 is placed under the contact with the flange expansion ring 16 of the expansion ring 16 to hold the upper surface of the sheet 12 and the convex edge. Therefore, as long as the ring 13 is pushed to the flange face, that is, it represents the difference between the two, the upper curved surface is stretched over the expansion ring 16 and the flange vermiculite f: ring. Therefore, the retaining piece 12 which is fixed to the expanded ring and has the Z-difference portion has the tensile force acting piece 12 extending from the center of the holding piece 12 to the periphery. Therefore, the gap is applied to the holding piece to enlarge. In addition, the semiconductor wafers I 5 on the wafer holder 1 are held on the wafer holder 1 by the stretching force. The holder (7) moves the wafer to protect the surface of the wafer 12 to make the wafer and the temple. Driving the Qiu 79 曰 ill /2 tool horizontal direction drive unit 72 in a horizontal direction, for example, by using a circular holding wheel, driving the wafer holder (7) toward the motor of the horizontal side and the motor outside the tooth, etc. The door mover can also be set to move to the mover. Further, the force of the round holder 10 is guided along the guide member in the XY square. The upper portion of the round holder 10 is provided with a tube for adsorbing and moving the semiconductor particles 15 to be removed, and the + conductor semiconductor chip 15 is adsorbed to the adsorption unit. There is an adsorption hole 19' for connecting the device 17^ γ a each of the adsorption holes 9 to the vacuum garment 1 . In addition, the stage 20 is mounted on the lower side of the wafer, and the upper and lower stages of the driving mechanism 73 are driven in the vertical direction (forward and backward) with respect to the holding piece 12. The motor can be mounted on the outside wind 2 with respect to the holding piece 12, for example, by the STOP upper and lower direction driving mechanism 73, the motor of the m and the gear 'driving the carrier 20 in the up and down direction'. Moving along the guide in the up and down direction: the motor-specific drive source 'to make the stage as shown in FIG. 5, the stage 20 is provided with: a cylindrical poor body 2: a holding surface 22 of the holding piece 12; J = base part & and a ^... substrate: 2 ==: part of the slider drive mechanism _. π ... is a woman's fixed part of the stage that is not shown. The attraction surface 22 is substantially the same as the semiconductor ridge particle 15 picked up as shown in FIG. 4, and has a longer iteration length than the semiconductor die 15, and is from the inner circumference of the stage 13 of the 13 1374513 stage. The outer peripheral side extends linearly. The suction opening 4i is provided with a cover 23 which is substantially the same width as the width of the suction opening 41 and which slides in the extending direction of the suction opening 41 to open and close the suction opening 41. The lid 23 closes the side end portion 23a of the lid suction opening 41 in the sliding direction, and the end portion rear end 23c of the lid 23 opening side. The side surface 23b of the lid 23 and the side surface 41b of the suction opening 41 constitute a sliding surface. If the suction opening 41 is substantially the same width as the semiconductor wafer 15 to be picked up on the abutting surface 22, it may be configured to provide a step difference in the inside of the step 22, and a slit communicating with the stage 2 is provided in the step portion. As shown in FIG. 7 and FIG. 7, the front end 23a of the cover 23 is pushed to contact the end surface 41a of the inner peripheral side of the stage of the suction opening 41 when the suction opening 41 is closed. The front end 23a of the cover 23 is convexly closed to the suction opening. The curved surface of the 41 side, the end face 23a of the push cover 23 to the end face 41a of the suction opening 41 that contacts the curved surface of the curved surface 23 of the / cover 23 is provided. The curved surface may be a cylindrical surface, and may be a cylindrical surface having a complex radius or a curved surface of other shapes. Further, at both corners of the suction opening 41 on the contact side of the front end 23a of the cover 23, there are longitudinal grooves 364 which are formed from the side surface 41b of the suction opening 41 in the width direction of the suction opening, and from the abutting surface 22 toward the stage 2 The inner surface thereof is extended upward and downward to attract the holding piece 12. The vertical groove 364 is formed by a sector-shaped cylindrical surface that is connected and sucked by approximately 270 degrees, and the tangent line 500 that contacts the cylindrical surface of each vertical groove 364 at the two corners of the suction opening 々I is in the direction in which the lid 23 is closed. When the end surface 4U protrudes to the position where the end surface 4U becomes a tangent to the cylindrical surface, as shown in FIG. 7(a), when the cover 23 is closed, since the front end 23a of the cover 23 is in contact with the end surface 41& In the closed state, the vertical groove 364 of the sector-shaped cylindrical surface having a substantially 27-degree angle at the both corners of the cover 15 1374513 23 and the suction opening 41 communicates with the inside of the abutting surface 22 and the casing 21. Further, as shown in Fig. 7(b), when one end 15a of the semiconductor die 15 is aligned with the end face 41a of the attracting opening 41 or the front end 23a of the cap 23, a part of the semiconductor die Η is exposed from the front end 23a of the cap 23. The approximately 9-degree sector-shaped diagonal portion is located above the longitudinal slot 364. As shown in Fig. 8, when the lid 23 closes the suction opening 41, the surface on the side of the holding piece 12 is substantially flush with the surface 22 of the abutting surface 22. A chamfered portion 23e is provided around the surface of the cover 23, and when the cover 23 closes the suction opening 41, a small V-shaped groove is formed between the abutting surface 22 and the cover 23. Further, as previously explained, the width of the suction opening 41 is substantially the same as the width of the cover 23 and the width of the semiconductor die 15, and the side faces 41b of the suction opening 41 are in slidable contact with the respective side faces 23b of the cover 23. . As shown in Fig. 5, the stage 20 includes a sliding groove 22a, and the thickness 'b of the Pq cover 23 from the abutting surface 22 is substantially the same width as the cover 23, and is carried from the end of the suction opening 41 of the opening side of the cover 23. The table 20 extends on the outer peripheral side; and the inclined surface 22b' is connected to the bottom surface 22a of the slide groove 22a. The side surface 22h of the sliding groove 22a is flush with the side surface 41b of the suction opening 41, and the side surface 23b of the lid 23 and the side surface 22h of the sliding groove 22a constitute a sliding surface. The bottom surface 22a' of the sliding groove 22a is substantially parallel to the abutting surface 22, and the cover 23 extends to a position slightly behind the cover 23 in a state where the suction opening 41 is closed, at a position that does not interfere with the cylindrical surface of the outer periphery of the stage 2〇. The position of 23c is located at the end 22c of the inner circumferential side of the stage. The end portion 22c is linear, and the rear end 23c of the cover 23 is in a state in which the lid 23 is closed, and the end portion 22c of the sliding groove 22a faces the stage 20 16 1374513.

外周側突出少許。傾斜面22b係從滑動用槽22a之端部22c 向緊貼面22之反向之下側傾斜。於傾斜面22b之兩側有與 滑動用槽22a之側面22h同一面之側面22j延伸。側面22· 與蓋23之側面23b係構成滑動面。傾斜面22b與滑動用槽 22a之底面22a’之交線形成與蓋23之滑動方向成直角方向 延伸之直線狀稜線之邊緣22d。由於蓋23之後端23c係在 蓋23關閉吸引開口 41之狀態，較滑動用槽22a之端部22c、 及邊緣22d朝載台20之外周侧突出，因此蓋23頂住保持 片12之面反面即下面23g係被邊緣22d支撐。 如圖4所示，本實施形態之半導體晶粒之拾取裝置 1〇〇，其滑件驅動機構300係設置於載台2〇内部，該滑件 驅動機構300係使安裝有能自由轉動之蓋23之滑件μ〗滑 動。滑件驅動機構300具備：第！連桿（Unk)326，被安裝= 載台20之基體部24之驅動部25於相對於緊貼面22之進 退方向驅動；活塞(piston)37〇，能自由滑動地安裝於載台 Μ之筐體，相對於緊貼面進退；止動部（st〇p㈣3仏: 设置於筐體21之内部’卡合於活塞37〇 <凸緣37ι，用以 限制活塞370相對於緊貼面22之進退方向之動作；彈菁 373,將第！連桿326與活塞37〇連接於相對於緊貼面η 功退之方向；導軌331 ’安裝於活塞370，與緊貼面22大 :平行’朝吸引開口 41之延伸方向延伸；滑件332，能自 由滑動地安裝於導軌331 ; 钞ή丄汉笫2連杯329，藉由銷328 Γ32Γ動地安裝於活塞37G，用以連接滑件如與第1連 26’在活塞370抵接止動部321a後，將第i連桿326 17 1374513 相對於緊貼面22之進退方向之動作轉換為導執33i沿滑件 332之方向的動作。在滑件332上安裝有於吸引開口 q之 寬度方向延伸之圓筒狀銷33〇，於銷33g有設於從蓋Μ之 前端23M主關閉吸引開口 41之側伸出之臂加之倒口字妒 之缺口能自由轉動地卡合。又，值體Η係連接於真空裝置 71，構成為能使内部形成真空。 第2連桿329係藉由一 4〇, . 稭由"又於鳊之銷327***第i連桿 3 26之卡合槽326a及設於另一端之士 _ 力鲕之卡合槽329a挾入滑件 之銷33Ga來連接滑件332與第1連桿326。在驅動部 25之内部安裝有用以使滑件驅動機# 300動作之馬達 381 ’在馬達381之旋韓站容鞋古儿 裝有凸輪383，其係與設置於 連杯326之軸326b前端之滾輪326c接觸。 如上述’由於滑件驅動機構3〇〇係將朝緊貼 2動作之第1連桿似之動作藉由L字形之第2連桿329 轉換為使滑件332朝緊貼面22平行移 此能作成小型的構成，能將1 ° 作，因 將八機構谷納於圓筒形筐體21之 内部。 如圖4所示，半導艚曰 咖等之電腦之^置_備有内部含 電腩之控制70,分別連接驅動部 71、筒夾18及晶圓保持具水 裝1 才八水十方向驅動部72、 向驅動機構73,驅動部25、真空裝 上下方. 保持具水平方向驅動部 《夾丨8及晶圓 欺上下方向驅動機槿71总7十 :從控制部70所輸出之指令進行驅動。此外，圖”:1 鍵線係表示連接控制冑Μ與驅動部25、真空裝置71、 18 筒夹18及晶圓保持呈水 動機構73之訊號線 方向媒動部72'載台上下方向黑 丨二持？圖Μ 12說明利用半導艘晶粒之拾取裝置 1〜圖8所1 拾取半導體晶粒15之動作。關於參照圖 s月之部分附加同樣符號，省略說明。 圖9(a)所示，控制邮 始蓋23與半導,曰/W 70係在蓋23為關閉之狀態下開 吸引開口 41之仂番 對位步騾。由於蓋23位於關閉 41之端面41 因此蓋23之前端23a為與吸引開口 U捿觸之位置，蓋23之後端23e之下面 於滑動用槽22a之表面，葬“紅⑼…之下面係搭載 23 ^ ^ 藉由'月動用槽22a來支撐。又，蓋 23之表面與緊貼面22係 4所干夕曰π '、大致同一面。控制部7〇係藉由圖 水平;二：持具水平方向驅動部72使晶圓保持具丨〇於 二在=二2。之待機位置上方為止。接著，控制 定位置後:時停=:_^ 由載么上下方6 '、持具】0之水平方向之移動，藉 由載…方向驅動機構73使載台 貼面22與蓋23夕志；执， 刀』戰〇20之緊 、盍23之表面緊貼於保持片12之下面 2〇之緊貼面22與蓋23之表面緊貼於保持片12之下面後： 控制部70就停止載a 2 之下面後 由晶圓保持且Λ 升°接著’控制部7g再次藉 之-端15二方向驅動部72使拾取之半導體晶粒15 %對準關閉狀態之蓋23之前端23a，使蓋 度方向位置與半導體晶粒】5之寬度方向位置—致，調整： 導體晶粒】5之側面與蓋23之側面咖一致。由於蓋u之 寬度與欲拾取之半導體晶粒15大致同一寬度，因此，若使 19 丄j /叶Jl：) -側面23b與半導體晶 晶粒15之各側面^ 之側面一致’就能進行半導體 持片12# 4 /、盍23之各側面23b之對位。此時，保 持片12係受到晶圓 吟保 阁0ruw 才’、仙之擴張壞16之拉伸力。 圖9(b)係載台20之緊貼面22 圖，係用1點鏈線表干#一 之表面的俯視 ,, 表不搭裁於其上之保持月12與半導㉜日 二了體解s其:置關係的圖，圖，)係為區別大致同-寬 二稍大。圖Τ〇 Η與蓋23而將蓋23圖示為較半導體晶粒The outer peripheral side protrudes a little. The inclined surface 22b is inclined from the end portion 22c of the sliding groove 22a toward the lower side opposite to the abutting surface 22. On both sides of the inclined surface 22b, the side surface 22j which is flush with the side surface 22h of the sliding groove 22a extends. The side surface 22· and the side surface 23b of the lid 23 constitute a sliding surface. The line of intersection of the inclined surface 22b and the bottom surface 22a' of the sliding groove 22a forms an edge 22d of a linear ridge extending in a direction perpendicular to the sliding direction of the cover 23. Since the rear end 23c of the cover 23 is in a state where the cover 23 closes the suction opening 41, the end portion 22c of the sliding groove 22a and the edge 22d protrude toward the outer peripheral side of the stage 20, so that the cover 23 abuts against the reverse side of the holding piece 12. That is, the lower 23g is supported by the edge 22d. As shown in FIG. 4, in the semiconductor die pick-up device 1 of the present embodiment, the slider driving mechanism 300 is disposed inside the stage 2, and the slider driving mechanism 300 is provided with a cover that can be freely rotated. Slide 23 of the slider slides. The slider driving mechanism 300 is provided with: The connecting rod (Unk) 326 is mounted = the driving portion 25 of the base portion 24 of the stage 20 is driven in the advancing and retracting direction with respect to the abutting surface 22; the piston (37) is slidably mounted on the stage The casing is advanced and retracted relative to the abutting surface; the stopper portion (st〇p(4)3仏: disposed inside the casing 21' is engaged with the piston 37〇<the flange 37ι to limit the piston 370 with respect to the abutment surface 22 The action of advancing and retracting direction; the elastic crest 373 connects the first link 326 and the piston 37 于 to the direction of retreat with respect to the abutting surface η; the guide rail 331 ' is mounted on the piston 370, which is larger than the adjoining surface 22: parallel' The sliding member 332 is slidably mounted on the guide rail 331; the two-piece cup 329 is slidably mounted to the piston 37G by pins 328 Γ 32 for connecting the sliding member. After the first joint 26' abuts against the stopper portion 321a of the piston 370, the operation of the i-th link 326 17 1374513 with respect to the advancing and retracting direction of the abutting surface 22 is converted into the operation of the guide 33i in the direction of the slider 332. A cylindrical pin 33〇 extending in the width direction of the suction opening q is attached to the slider 332, and the pin 33g is provided on the pin 33g. The front end 23M is mainly closed to the side of the suction opening 41 and the notch of the inverted opening is rotatably engaged. Further, the value is connected to the vacuum device 71 to form a vacuum inside. The two-link 329 is inserted into the engaging groove 326a of the i-th link 3 26 and the engaging groove 329a of the other end of the y-shaped pin 326a by the 销 销 pin 327. The slider 33Ga of the slider is connected to the slider 332 and the first link 326. A motor 381 for operating the slider driver #300 is mounted inside the driving portion 25, and the motor 381 is mounted on the motor 381. The cam 383 is mounted in contact with the roller 326c disposed at the front end of the shaft 326b of the coupling cup 326. As described above, the first link of the action of the slider driving mechanism 3 is actuated by the first link. The L-shaped second link 329 is converted into a parallel configuration in which the slider 332 is moved in parallel to the abutting surface 22, and can be made 1 degree, since the eight mechanisms are accommodated inside the cylindrical casing 21. As shown in FIG. 4, the computer of the semi-conducting coffee maker and the like has a control 70 for internal electric power, and is connected to the driving portion 71 and the collet respectively. 18 and the wafer holder water-filling device 1 is only the eight-water ten-direction driving unit 72, the driving mechanism 73, the driving unit 25, and the vacuum are mounted on the lower side. The holder has the horizontal direction driving unit "clamp 8 and the wafer bulling direction driving machine"槿71 total seventy: drive from the command outputted by the control unit 70. In addition, the figure ": 1 key line indicates that the connection control 胄Μ and the drive unit 25, the vacuum device 71, the 18 collet 18, and the wafer are kept water. The signal line direction of the moving mechanism 73 is in the direction of the medium-moving part 72'. Figure 12 illustrates the operation of picking up the semiconductor die 15 using the pick-up device 1 to Figure 8 of the semiconductor wafer. The same reference numerals are attached to the parts of the reference s month, and the description is omitted. As shown in Fig. 9(a), the mail cover 23 and the half guide are controlled, and the 曰/W 70 is opened in the state in which the cover 23 is closed to open the suction opening 41. Since the cover 23 is located at the end surface 41 of the closing 41, the front end 23a of the cover 23 is in contact with the suction opening U, and the lower end 23e of the cover 23 is on the surface of the sliding groove 22a, and the bottom of the cover 23a is buried under the red (9). ^ ^ is supported by the 'monthly movement groove 22a. Moreover, the surface of the cover 23 and the surface 22 of the contact surface 22 are substantially the same surface. The control unit 7 is supported by the figure level; The horizontal direction driving unit 72 causes the wafer holding device to be placed above the standby position of the second and second positions. Then, after the fixed position is controlled: the time stop =: _^ is carried by the upper and lower 6', the holding device] In the horizontal direction, the stage veneer 22 and the cover 23 are slid by the directional drive mechanism 73; the knives are tight, and the surface of the cymbal 23 is in close contact with the lower surface of the holding piece 12; After the contact surface 22 and the surface of the cover 23 are in close contact with the lower surface of the holding piece 12: the control unit 70 stops holding the bottom of the a 2 and is held by the wafer and then lifts up. Then the control unit 7g borrows again - the end 15 The two-direction driving portion 72 aligns the picked semiconductor die by 15% with the front end 23a of the cover 23 in the closed state, so that the position of the cover is aligned with the semiconductor die. 】 5 in the width direction position, the adjustment: the conductor die] 5 side is the same as the side of the cover 23. Since the width of the cover u is substantially the same width as the semiconductor die 15 to be picked up, therefore, if 19 丄j /Leaf Jl:) - The side surface 23b coincides with the side surface of each side surface of the semiconductor crystal grain 15 to perform alignment of the side faces 23b of the semiconductor holding piece 12#4/, 23. At this time, the holding piece 12 is attached. According to the wafer 吟 阁 阁 0 w 才 、 、 、 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙 仙,, the table is not laid on the top of the month and the second half of the 32nd day. The figure is: the relationship between the map, the map, and the system is the same as the difference - the width is slightly larger. 23 and the cover 23 is illustrated as a semiconductor die

“ θ⑻、圖12(b)均同樣。如圖9(b)所示，口要 蓋23與半導體晶粒15之 汀丁八要 1正置致，半導體晶粒15之大致 90度之扇形斜線部分就會位於縱槽3μ上。" θ (8) and Figure 12 (b) are the same. As shown in Figure 9 (b), the port cover 23 and the semiconductor die 15 are aligned, and the semiconductor die 15 is substantially 90 degrees. The part will be located on the longitudinal groove 3μ.

當載台2〇朝保持片12之下面前進，緊貼及半導體晶 粒15之對位結束後，控制部7()就結束對位步驟。接著， 控制部70將筒夾18移動至欲拾取之半導體晶粒"之上方 近處’與半導體晶，粒15保持隔少許間隙之高度。控制部 在筒夾18之移動結束後，藉由真空裝置71開始從吸附孔 19吸引空氣，使筒夾18為吸附半導體晶粒15之待機狀態。 如圖10〜圖13所示，控制部7〇開始保持片剝離步驟。 控制部70藉由真空裝置71使載台20之筐體21之内部形 成真空。只要使筐體21之内部壓力形成真空，則圖^ 所示之與筐體21之内部連通之縱槽364亦成真空，將保持 片12吸附於緊貼面22。此時，雖保持片！ 2被真空向下吸 引住，但在此狀態下，保持片12仍未從半導體晶粒15剝 離。又，在設置於圖8所示之蓋23之表面之倒角部分23e 與吸引開口 41間之V字形槽，有空氣從載台2〇之外周側 20 1374513 向成為真空之縱槽364流動。雖此v字形槽之壓力係較大 氣壓為低的廢力，但以此負壓不能剝離保持片12。 如圖10(a)所示，只要滑件驅動機構3〇〇之驅動部 之馬達381依照控制部Μ之指令轉動，安裝於馬達381之 :之凸輪383就會轉動。凸輪383係橢圓形，凸輪面係與 女裝於第1連桿326之軸326b之前端之滾輪326c接觸只 要朝圖ίο⑷之箭頭方向轉動，凸輪383之凸輪面就會朝緊 貼面22之方向頂起滾輪326c。藉由此動作使軸补上升， 第1連桿3之6整體向緊貼面22上升。只要第i連桿326整 體上升，藉由彈簧373連接於緊貼面22側之活塞37〇就會 被第1連桿326頂起，使活塞37〇整體向緊貼面22上升。 只要活塞370整體向緊貼面22上升，安裝於緊貼面以側 之導軌331亦與活塞37〇 一起向緊貼面22上昇。只要導軌 3 3 1上升女裝為山導轨3 3丨之上面滑動之滑件3 3 2亦向緊 貼面22上昇。接著，透過臂23f能自由轉動地卡合於滑件 332之蓋23之前端23a係隨著滑件332上升而從緊貼面22 向上方前進。 只要蓋23之前端23a從緊貼面22向上方前進，蓋23 之前端23a就會頂起保持片12與半導體晶粒15之一端 15a。於是，由於前端23a從保持片12承受向下的力，因此 蓋23以銷330為中心朝順時針方向旋轉。由於i 23之後 端23c係靠滑動用槽22a之表面來支撐，且後端23c之保持 片1 2側之面與緊貼面22大致為同一面，因此蓋23頂起保 持片12之表面係從蓋23之前端23&側向後端23c側向下傾 21 1374513 斜。傾斜角度相對於緊貼面係角度α。另一方面傾斜面 22b相對於緊貼面22傾斜大於角度α之角度冷。因此傾 斜面22b不妨礙蓋23之後端23 c之移動，蓋23之下面23g 持續與邊緣22d線接觸。 隨著蓋23之前端23a之上升，蓋23把欲拾取之半導體 晶粒15與保持片12往上頂起。另—方面，位於成為真空 之縱槽364上之半導體晶& 15之兩角部分之保持片。被 吸引固定於緊貼面22。因此藉由蓋23之上升，貼付於欲拾 取之半導體晶粒15之保持片12向緊貼面22被拉向斜下， 藉由此傾斜向下之拉伸力，從位於縱槽上之半導體晶 粒！5之兩角部分開始剝離保持片12，位於縱槽⑽上之大 致90度之扇形部分之仅姓 义山 刀之保持片12脫離。接著，隨著蓋23之 刖端23a之上升，龄1 νΛ 之刖端23a露出於緊貼面22之半 導體晶粒1 5之大致二自彡 双一角形狀部分之保持片12 被拉向斜下’從半導體晶粒 向之中心逐漸剝離。 之寬度方向之兩側向寬度方 又’依照控制部7〇之沪人、杜. 夕民、去才曰7 ’進一步使滑件驅動機構300 之馬達381轉動，只 職構300 383,進-步使第…曰〃馬達381同時轉動之凸輪 Λ 6與活塞370向緊貼面U之方 向上升，突出於活塞37n k “之万 設置於菌體21之止動^2凸緣Μ之端面就會撞到 之緊貼面22之前進❸ 别進，來自蓋23之前端^ 進係在既定位置停止。口 到既定位置為止，就會 、要則鹄23a上升 會別端…之曲面形成保持片12之 22 剝離線53 β 如圖U所示 而轉動，因此蓋二’由於蓋23隨著蓋23之前端仏之上升 猶向蓋23之3之前端.23a較半導體晶粒之-端15a 半導體晶教！5之—向移動。因此，剝離線53係形成於較 如圖U所示端〗5&稍#盍23之滑動方向之位置。 分係藉由保持導體曰曰粒1 5之保持片1 2已脫離之部 從保持片12已2來消除向緊貼面22之吸引力。又，在 導體晶粒15與祖綠之一端153到剝離線53為止之部分之半 粒B之保持月片12間引入空氣，此部分之半導體晶 導體晶粒二1側之面座力成為大氣厂堅。另-方面，半 上方之前進而接近^侧之面储㈣蓋23之前端…之 半導體晶粒15之保持片？之吸附面，藉此壓力降低。因此， 力為高，從保持片124 2側之面之壓力較筒夾18側之壓 18吸 、、 剥離之半導體晶粒15之部分被筒夾 半導體晶粒15之保持片12側與筒失18側之 從半導I*曰4及有保持片12所造成之下拉力，因此位於 +導體S曰粒15之剝離線53至蓋23之後端23C侧且保持 仍未剝離之部分在半導體晶粒】5與筒夾1 $間殘留若 干間隙，仍未被筒夹18吸附。因此，半導體晶粒15在被 筒夾1 8吸附之σρ v刀與未被筒夾丄8吸附之部分間，產生微 小之彎曲變形。 如圖ίο⑷所示，只要蓋23之前端23&從緊貼面22朝 上方前進’頂起保持片12之側之表面傾斜，較剝離線53 位於蓋23之後端23c側之蓋23之表面與保持片12之間就 23 會產生間隙’較剝離線53位於蓋23之後端23c側之蓋23 :表面壓力就會大致成為大氣壓…由於蓋23之倒角部 分…之表面麗力成為與蓋23之表面壓力同樣的大氣壓， 因此除了鄰接於前端❿之部分外，倒角部分…之保持片 12未從'導體晶粒15剝離。因此，剝離線53係如圖 所不’沿盍23之前端23a ’從半導體晶粒i5之寬度方向之 側面到側面之延長線，剝料53 4延伸嶋23之側面 23b之部分。 如圖1〇(3)所示，由於蓋23之厚度較離前端23a之緊貼 面22之既定前進高度為厚’因此蓋23之各側面別係盘 丨開口心各側面41b接觸之狀態，又，蓋23之後端 C之：面係與滑動用槽22a之表面接觸。1，在縱槽364 :亡，盍有從半導體晶粒15剝離之保持片12。因此，由於 :沒有空氣從筐體21之外部向筐體21之内部流入，因 在售體21之内部保持真空。 面2又，由於滑件驅動機構300之彈簧373具有以從緊貼 頁起蓋23之刚端23a之程度幾乎不彎曲程度之強度， ^此即使蓋23之前端23a從緊貼面22頂起到既定前進高度 因 活塞370與第1連桿326間之距離亦幾乎不變化。 藉由第1連杯326之上升使蓋23僅從緊貼面22突 出而未滑動。 如圖12(a)所示，只要依照控制部7〇之指令進一步使滑 5動機構30〇之凸輪383轉動，使第）連桿似向緊貼 22頂起，無法向緊貼面22移動之活塞37〇與第！連桿 24 ^/4513 326間之彈簧373就會藉由馬達38ι與凸輪如於相對於 緊貼面22進退之方向開始壓縮。只要彈簧⑺受壓縮，活 塞370就不對緊貼面22前進，僅第！連桿似對緊貼面η 前進》因此，活塞370之銷328未對緊貼面22上升，僅位 於第1連桿326之卡合槽ιλι λ·松 卞0槽326a内之第2連桿329之銷327 2緊貼面22之方向上升。於是，第2連桿⑵以銷似為 中心開始轉動。藉由此轉動動作，第2連桿奶之另一端 _之卡合们29a向載台20之外周側移動，透過臂23f而能自 ㈣動地卡合在固定有位於卡合槽伽内之銷_之滑件 ^2與牛332之銷33〇之蓋23向載台2〇之外周側開始滑 勃0 二圖勢圖13所示，由於只要蓋23開始滑動’蓋 接觸邊主1呆1寺片12表面的反面即下面23§就會與邊緣叫 ===支_動，因此蓋23之傾斜 日“蓋23之滑動而逐漸變大 '然而，即使蓋 •動之狀態，傾斜面22b與緊貼面22所形 =When the stage 2 is advanced toward the lower side of the holding piece 12, the control portion 7 () ends the alignment step after the alignment of the semiconductor wafer 15 is completed. Next, the control unit 70 moves the collet 18 to the vicinity of the semiconductor die " to be picked up, and the semiconductor crystal, and the pellets 15 are kept at a height of a slight gap. Control unit After the movement of the collet 18 is completed, air is sucked from the adsorption hole 19 by the vacuum device 71, so that the collet 18 is in a standby state in which the semiconductor die 15 is adsorbed. As shown in FIGS. 10 to 13, the control unit 7 starts the sheet peeling step. The control unit 70 vacuums the inside of the casing 21 of the stage 20 by the vacuum unit 71. As long as the internal pressure of the casing 21 is vacuumed, the longitudinal groove 364 which communicates with the inside of the casing 21 as shown in Fig. 2 is also evacuated, and the holding piece 12 is attracted to the abutting surface 22. At this time, keep the piece! 2 is sucked down by the vacuum, but in this state, the holding piece 12 is still not peeled off from the semiconductor die 15. Further, in the V-shaped groove provided between the chamfered portion 23e of the surface of the cover 23 shown in Fig. 8 and the suction opening 41, air flows from the outer peripheral side 20 1374513 of the stage 2 to the longitudinal groove 364 which becomes a vacuum. Although the pressure of the v-shaped groove is a large waste force, the holding piece 12 cannot be peeled off by the negative pressure. As shown in Fig. 10 (a), as long as the motor 381 of the driving portion of the slider driving mechanism 3 rotates in accordance with the command of the control unit ,, the cam 383 attached to the motor 381 rotates. The cam 383 has an elliptical shape, and the cam surface is in contact with the roller 326c at the front end of the shaft 326b of the first link 326 as long as it is rotated in the direction of the arrow of Fig. (4), and the cam surface of the cam 383 is directed toward the close surface 22. The roller 326c is jacked up. By this operation, the shaft compensation is increased, and the entire first link 3 6 is raised toward the close surface 22 . As long as the i-th link 326 ascends as a whole, the piston 37 that is connected to the side of the abutting surface 22 by the spring 373 is lifted up by the first link 326, and the piston 37 is entirely raised toward the abutting surface 22. As long as the piston 370 as a whole rises toward the abutting surface 22, the guide rail 331 attached to the side close to the abutting surface also rises toward the abutting surface 22 together with the piston 37A. As long as the guide rail 3 3 1 rises, the slide member 3 3 2 which slides over the mountain rail 3 3 亦 also rises toward the close surface 22 . Then, the front end 23a of the cover 23 that is rotatably engaged with the slider 332 by the transmission arm 23f advances upward from the abutment surface 22 as the slider 332 rises. As long as the front end 23a of the cover 23 advances upward from the abutting surface 22, the front end 23a of the cover 23 lifts up the holding piece 12 and one end 15a of the semiconductor die 15. Then, since the front end 23a receives a downward force from the holding piece 12, the cover 23 rotates clockwise around the pin 330. Since the rear end 23c of the i 23 is supported by the surface of the sliding groove 22a, and the surface of the rear end 23c on the holding piece 12 side is substantially flush with the abutting surface 22, the cover 23 lifts up the surface of the holding piece 12. From the front end 23 & side to the rear end 23c side of the cover 23, it is inclined downward by 21 1374513. The angle of inclination is relative to the angle α of the facing system. On the other hand, the inclined surface 22b is inclined with respect to the adhering surface 22 at an angle greater than the angle α. Therefore, the inclined surface 22b does not interfere with the movement of the rear end 23c of the cover 23, and the lower surface 23g of the cover 23 continues to be in line contact with the edge 22d. As the front end 23a of the cover 23 rises, the cover 23 pushes up the semiconductor die 15 to be picked up and the holding piece 12 upward. On the other hand, a holding piece located at both corners of the semiconductor crystal & 15 on the longitudinal groove 364 of the vacuum. It is attracted to the close surface 22 by attraction. Therefore, by the rise of the cover 23, the holding piece 12 attached to the semiconductor die 15 to be picked up is pulled obliquely downward to the abutting surface 22, thereby tilting the downward tensile force from the semiconductor located on the longitudinal groove Grain! The two corner portions of the 5 start to peel off the holding piece 12, and the only 90-degree sector portion of the vertical groove (10) is separated from the holding piece 12 of the Yishan knife. Then, as the end 23a of the cover 23 rises, the end 23a of the age 1 νΛ is exposed to the substantially two self-double-angular portion of the semiconductor die 15 of the abutment surface 22, and the holding piece 12 is pulled downward. 'From the semiconductor die to the center gradually peeled off. The both sides of the width direction are in the width direction, and the motor 381 of the slider drive mechanism 300 is further rotated in accordance with the control unit 7 of the Shanghainese, Du. Ximin, and the genius 7', and only the job 300 383, into - Step 曰〃 曰〃 曰〃 motor 381 simultaneously rotates the cam Λ 6 and the piston 370 rises in the direction of the close surface U, protruding from the piston 37n k "the tens of thousands of the end of the flange 21 of the stop 21 of the bacterial body 21 Will hit the tight surface 22 before entering the ❸, do not enter, from the front end of the cover 23, the system will stop at the predetermined position. When the mouth reaches the predetermined position, the 鹄23a will rise and the other end... 12 of 22 The stripping line 53 β rotates as shown in U, so the lid 2' is due to the rise of the lid 23 with the front end of the lid 23 toward the front end of the lid 23 of the lid 23. 23a is compared to the end of the semiconductor die 15a semiconductor The crystal teaches! 5—moves. Therefore, the stripping line 53 is formed at a position closer to the sliding direction of the end 5& slightly #盍23 as shown in Fig. U. The sub-system maintains the retention of the conductor particles 5 The portion of the sheet 12 that has been detached from the retaining sheet 12 has been removed from the attraction surface 22. Again, in the conductor die 15 and the ancestors The green half 153 to the stripping line 53 is a part of the half of the grain B, and the air is introduced between the moon pieces 12, and the surface seating force of the semiconductor crystal grain of the part of the semiconductor crystal grain becomes the atmosphere of the factory. In other respects, the upper half The surface of the semiconductor die 15 of the semiconductor wafer 15 at the front end of the cover 23 is further lowered, and the pressure is lowered. Therefore, the force is high, and the pressure from the side of the holding piece 124 2 is lower. The portion of the semiconductor die 15 that is pressed and removed by the clamp 18 is caused by the semiconductor wafer 15 on the side of the holding piece 12 and the side of the tube 18 from the semiconductor guide I*曰4 and the holding piece 12. The pull-down force is therefore located at the stripping line 53 of the +conductor S pellet 15 to the rear end 23C side of the lid 23 and remains unpeeled in the gap between the semiconductor die 5 and the collet 1 $, still not being clamped 18. The adsorption of the semiconductor crystal grain 15 between the σρ v knives adsorbed by the collet 18 and the portion not adsorbed by the collet 丄 8 causes minute bending deformation. As shown in Fig. οο (4), as long as the front end 23 &amp of the cover 23 ; advancing from the close surface 22 upwards, the surface of the side of the holding piece 12 is inclined, and is peeled off. Off-line 53 is located between the surface of the cover 23 on the side of the rear end 23c of the cover 23 and the holding piece 12, and a gap 23 is formed. The cover 23 is located on the side of the rear end 23c of the cover 23 from the peeling line 53: the surface pressure is approximately atmospheric pressure... due to The surface yoke of the chamfered portion of the cover 23 becomes the same atmospheric pressure as the surface pressure of the cover 23, so that the holding piece 12 of the chamfered portion... is not peeled off from the 'conductor die 15 except for the portion adjacent to the front end 。. The peeling line 53 is a portion extending from the side surface to the side surface of the width direction of the semiconductor die i5 along the front end 23a' of the 盍23, and the stripping portion 534 extends the portion of the side surface 23b of the 嶋23. As shown in Fig. 1 (3), since the thickness of the cover 23 is thicker than the predetermined advancing height of the abutting surface 22 of the front end 23a, the sides of the cover 23 are in contact with each side surface 41b of the opening of the disk. Further, the surface of the rear end C of the cover 23 is in contact with the surface of the sliding groove 22a. 1. In the vertical groove 364, there is a holding piece 12 which is peeled off from the semiconductor die 15. Therefore, since no air flows into the inside of the casing 21 from the outside of the casing 21, the vacuum is maintained inside the body 21. Further, since the spring 373 of the slider driving mechanism 300 has a strength which is hardly bent to the extent that the front end 23a of the cover 23 is brought up from the close contact, even if the front end 23a of the cover 23 is lifted from the abutting surface 22 The distance between the piston 370 and the first link 326 hardly changes to a predetermined forward height. The lid 23 protrudes from the abutting surface 22 only by the rise of the first continuous cup 326 without slipping. As shown in Fig. 12 (a), the cam 383 of the slide 5 mechanism 30 is further rotated in accordance with the command from the control unit 7A, so that the first link is pushed up against the close contact 22 and cannot be moved toward the close surface 22. The piston 37 〇 and the first! The spring 373 between the links 24^/4513 326 begins to compress by the motor 38ι and the cam as it moves forward and backward relative to the abutment surface 22. As long as the spring (7) is compressed, the piston 370 does not advance against the abutment surface 22, only the first! The link is similar to the adjoining surface η. Therefore, the pin 328 of the piston 370 does not rise toward the abutment surface 22, and is only located in the engagement groove ιλι λ · the second link of the first link 326 The 329 pin 327 2 rises in the direction of the face 22. Then, the second link (2) starts to rotate around the pin. By this rotation operation, the other end of the second link milk is engaged with the outer peripheral side of the stage 20, and the arm 23f is movably engaged with the arm 23f to be fixed in the engagement groove. The pin _ the sliding piece ^ 2 and the 332 of the 332 pin 33 〇 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 23 1 The reverse side of the surface of the temple piece 12, that is, the lower 23 § will be called with the edge === branching, so the sloping day of the cover 23 "sliding and gradually becoming larger as the cover 23" However, even if the cover is in a moving state, the inclined surface 22b and the close surface 22 shape =

叫…所形成之角度α為大，因此蓋：:下:較23蓋 與傾斜面22b不干涉。且，i 23滑動期間蓋 J 23g為持續接觸於邊緣22d之狀態。 • 如圖12(b)所示’只要蓋23滑動，蓋23之前 .^吸引開口 41之端面仏離開，吸引開口 41開啟二 :=。半導體晶粒15大致同-寬度之開口開啟部= 由，載台2。之管體21之内部藉由真空裝置7ι形成二 L，因此開口開啟部42將保持片12吸引 二 τ。接著， 25 丄3/4513 隨著蓋23之滑動，保持片12被吸入開口開啟部42中而從 半導體晶粒15剝離。由於半導體晶粒15與保持片a間之 旬離線53為沿蓋23之前端23a之曲線形狀，因此從緊貼面 22，以蓋23之寬度方向之中央***成山形之稜線在沿緊 貼面22之面内’蓋23之各側面2孙側為較中央部分向滑 動方向傾斜的線。因此，半導體晶粒15之各側面側之保持 片12係較半導體晶粒15之寬度方向之中央部分之保持片 • 12先脫離。如上述，由於剝離線53在沿緊貼面22之面内， 相對於半導體晶粒15之各端15a、15b或相對於滑動方向傾 斜，因此可緩和被筒< 18 „及附之部分與未被筒< Η吸附 之部分間之微小f _變形而產生之應力，有效抑制半導體 晶粒1 5之損傷。 "隨耆蓋23之滑動，開口開啟部42向載台20之外周側 婕大，剝離線53亦依序朝載台2〇之外周侧平行移動。保 持片12沿剝離線53從半導體晶粒15之一端⑸向另一端 Φ 15b依序脫離，依序被開口開啟部42吸引。 如圖1 3所示，只要蓋23滑動而使剝離線53從半導體 曰曰粒15之一端15a向另一端i5b移動，與參照圖η所說明 者同樣玉氣進入保持片12已脫離之一端1 5a到剝離線53 為止部分之半導體晶粒1 5與保持片12間，此部分之半導 •體曰曰粒15之保持片12側之面之壓力成為大氣壓。另一方 面’半導體晶板之筒夾丨8侧之面因接近筒失丨8之吸附面 而壓力降低，因此從保持片12已脫離之一端15a到剝離線 53之跟前為止之半導體晶粒ι5之部分被筒失18吸附。接 26 1374513 著’隨著藉由蓋23之滑動使剝離線53從半導體晶粒丨5之 一端15a向另一端15b移動，半導體晶粒15從一端15a向 另一端15b依序被筒夾18吸附。 如圖12(a)、圖13所示，只要蓋23滑動，蓋23頂住保 持片12表面的反面側即下面23g就會與邊緣22d接觸而滑 動，因此邊緣22d與蓋22之下面23g之切線成為間隔開大 氣壓之筐體21之外部與真空狀態之筐體21之内部之密封 線又如圖5所不，蓋23之側面23b與滑動用槽Ua之 側面22j及蓋23與傾斜面22b之兩側之側φ 22h係分別構 成滑動面》因此’能抑制空氣從蓋22之下面叫與滑動用 槽22a之底面22a，之間隙β> /D丨γ 1丨承及盍23之侧面23b與各側面22h、The angle α formed by the ... is large, so the cover:: lower: the 23 cover does not interfere with the inclined surface 22b. Further, the cover J 23g is in a state of continuous contact with the edge 22d during the sliding of i 23. • As shown in Fig. 12(b), as long as the cover 23 slides, the end face of the suction opening 41 is separated, and the suction opening 41 is opened two:=. The semiconductor die 15 is substantially the same width-opening opening portion = by the stage 2. The inside of the tubular body 21 is formed by the vacuum means 7i, so that the opening opening portion 42 attracts the holding piece 12 by two τ. Next, 25 丄 3/4513, as the cover 23 slides, the holding piece 12 is sucked into the opening opening portion 42 to be peeled off from the semiconductor die 15. Since the off-line 53 between the semiconductor die 15 and the holding piece a is in the shape of a curve along the front end 23a of the cover 23, the ridge line from the abutting surface 22 in the width direction of the cover 23 is formed into a mountain-shaped ridge line along the abutting surface. In the plane of the face 22, the side faces of the two sides of the cover 23 are lines which are inclined toward the sliding direction from the center portion. Therefore, the holding sheets 12 on the side faces of the semiconductor crystal grains 15 are separated from the holding sheets 12 in the central portion in the width direction of the semiconductor crystal grains 15. As described above, since the peeling line 53 is inclined with respect to the respective ends 15a, 15b of the semiconductor die 15 or with respect to the sliding direction in the plane along the abutting surface 22, the portion of the tube <18> The stress generated by the small f _ deformation between the portions of the cartridge &; Η is effectively suppressed, and the damage of the semiconductor crystal grains 15 is effectively suppressed. " With the sliding of the squeegee 23, the opening opening portion 42 faces the outer peripheral side of the stage 20. When the ridge is large, the peeling line 53 is also moved in parallel toward the outer peripheral side of the stage 2, and the holding piece 12 is sequentially detached from one end (5) of the semiconductor die 15 to the other end Φ 15b along the peeling line 53, and is sequentially opened by the opening. As shown in Fig. 13, as shown in Fig. 3, as long as the lid 23 slides and the peeling line 53 moves from the one end 15a of the semiconductor crucible 15 to the other end i5b, the jade gas enters the holding sheet 12 and is separated as described with reference to Fig. One end of the terminal 15a is between the semiconductor die 15 and the holding piece 12 from the portion of the stripping line 53, and the pressure of the surface of the semi-conductive body particle 15 on the side of the holding piece 12 becomes atmospheric pressure. The surface of the cylinder plate clamp 8 is close to the suction surface of the tube 8 On the other hand, the pressure is lowered, so that the portion of the semiconductor crystal ι5 from the one end 15a of the holding sheet 12 to the front side of the peeling line 53 is adsorbed by the tube 18. The detachment line is brought along with the sliding of the cover 23 by the 26 1374513. 53 moves from one end 15a of the semiconductor die 5 to the other end 15b, and the semiconductor die 15 is sequentially adsorbed by the collet 18 from the one end 15a to the other end 15b. As shown in Fig. 12 (a), Fig. 13, as long as the cover 23 When sliding, the cover 23 is pressed against the opposite side of the surface of the holding piece 12, that is, the lower surface 23g is slid in contact with the edge 22d, so that the tangent of the edge 22d and the lower surface 23g of the cover 22 becomes the outer portion of the casing 21 which is spaced apart from the atmospheric pressure and the vacuum state. The sealing line inside the casing 21 is as shown in Fig. 5. The side surface 23b of the cover 23 and the side surface 22j of the sliding groove Ua and the side φ 22h of the cover 23 and the inclined surface 22b respectively constitute a sliding surface. It is possible to suppress the air from the lower surface of the cover 22 to the bottom surface 22a of the sliding groove 22a, the gap β> /D丨γ 1 bearing and the side surface 23b of the crucible 23 and each side surface 22h,

22j之間隙進人普藉,1 + 一 A 之内4，因此能在使蓋滑動期間， 良好保持筐體2 1内部之真Λ 具工將保持片1 2有效真空吸引 至吸引開口 41中。又，口西觉。 T 又只要蓋23滑動，蓋23之後端23c 就會從緊貼面逐漸朝下方软私 斩朝下方移動，因此當使蓋滑動時，蓋23 之後端23c不會撞到鄰接 -μ叙& γ c 按之手導體日日粒15，不會因蓋23之 滑動而知壞鄰接之半導體曰 丰導體曰船】“ 因此即使周圍有鄰接之 +導體^ 15時亦能^拾取半㈣晶粒Η。 又’雖開口開啟部42被已被剝離 但由於將保持片12哄2|芯曰 〈保捋片12覆盍， 及引至開口開啟部42申， 端23a持續向伴姓u , •^盖23之刖 '、寺片12未剝離之部分滑叙 部42吸引保持片 ，因此開口開啟 體晶粒15之—端,不會停止，可將保持片整體從半導 42並逐漸剝離 W依序吸引至開口間啟部 ^免產生未剝離部分。 27 1374513 只要貼付於半導體晶粒15之保持片12全脫離，半導 體晶粒15就會全面被筒夾18吸附，藉由筒夾18進行拾取。The gap of 22j is borrowed from the inside, and the inside of 1 + A is 4, so that the inner part of the casing 2 1 can be well maintained during the sliding of the cover. The workpiece 1 2 can effectively hold the sheet 1 2 into the suction opening 41. Also, the mouth is sensational. T, as long as the cover 23 slides, the rear end 23c of the cover 23 gradually moves downward from the abutting surface toward the lower soft side, so that when the cover is slid, the rear end 23c of the cover 23 does not hit the abutment-μ; γ c According to the hand conductor, the granule 15 will not be damaged by the sliding of the cover 23, and the adjacent semiconductor 曰 曰 曰 】 】 】 】 】 】 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此 因此又. Further, although the opening opening portion 42 has been peeled off, since the holding piece 12哄2|core 曰 捋 捋 捋 盍 盍 盍 盍 盍 盍 盍 盍 盍 盍 盍 盍 盍 盍 盍 盍 盍 , , , , , , , , , , , , After the cover 23, the portion of the wiper portion 42 that is not peeled off of the temple piece 12 attracts the holding piece, so that the end of the opening opening body die 15 does not stop, and the entire holding piece can be gradually peeled off from the semiconductor guide 42. The semiconductor wafers 15 are fully adsorbed by the collet 18 by the collet 18, as long as the retaining sheets 12 attached to the semiconductor die 15 are completely detached. Pick up.

拾取半導體晶粒15後，只要滑件驅動機構300之凸輪 383依照控制部70之指令進一步轉動，此次藉由凸輪383 之轉動，使第1連桿326之軸326b下降，隨之，蓋23之 前端23a朝向吸引開口 41之端面41a之方向滑動，尸| a 知23a與端面41a接觸，蓋23就會關閉吸引開口 41。於是， 彈簧373之壓縮力被開放。接著，只要凸輪383進—步轉 動而使軸326b下降，活塞370及第1連桿326、第2連桿 329就會一起下降，蓋23之前端23a下降到與緊貼面22之 表面大致同一位置為止，返回初始位置。 如以上所述，本實施形態係在使蓋23之前端23a從緊 貼面22朝上方前進之狀態使蓋23滑動，依序吸引保持片 12至與出現於半導體晶粒15下方近處之半導體晶粒15大 致同一寬度之吸引開口 41之開口開啟部42中，藉此依序 進行保持片12之剝離，並且將半導體晶粒15依序吸附至 在半導體晶粒15之上方近處待機之筒夾18，因此，當保持 片12剝離時，能達到抑制施加於半導體晶粒15之力並容 易拾取半導體晶粒15之效果…本實施形態中，在使縱 -64 $成真空之狀態下，使蓋23之前# ^從緊貼面Μ 朝上方前進而頂起半導體晶粒15，藉由保持片^所產生之 向下拉伸力，用以剥離欲拾取之半導體晶粒15之—端15a ::角之保持片12,藉此形成剝離之開端，然後，使蓋23 -動’將保持片12吸引至開口開啟部42，因此能更容易達 28 到剥離保持片12之效果。 本實施形態中，由於使蓋23從半導體晶粒15 ^側向另-端側15b滑動’依序將保持片12吸引至開口 開啟部42以進行保持片a之制雜m 彔離，因此即使開口開啟部 42被吸引至開口開啟部4 1 中之保持片12覆蓋，蓋23 向未剝離保持片12之部分捭螬诉备 m 刀得續，月動，因此能達到將保持 12整體依序吸引至開口開啟 网啟。p 42逐漸剝離，且容易進After the semiconductor die 15 is picked up, as long as the cam 383 of the slider driving mechanism 300 is further rotated in accordance with the instruction of the control unit 70, the rotation of the cam 383 causes the shaft 326b of the first link 326 to be lowered, and the cover 23 is followed. The front end 23a slides in the direction of the end surface 41a of the suction opening 41, and the cover 23 closes the suction opening 41. Thus, the compressive force of the spring 373 is opened. Next, as long as the cam 383 is rotated in the forward direction to lower the shaft 326b, the piston 370, the first link 326, and the second link 329 are lowered together, and the front end 23a of the cover 23 is lowered to be substantially the same as the surface of the abutting surface 22. Return to the initial position until the position. As described above, in the present embodiment, the cover 23 is slid in a state where the front end 23a of the cover 23 is advanced upward from the adhering surface 22, and the holding piece 12 is sequentially attracted to the semiconductor which is present near the lower side of the semiconductor die 15. The die 15 is substantially in the opening opening portion 42 of the suction opening 41 of the same width, whereby the peeling of the holding piece 12 is sequentially performed, and the semiconductor die 15 is sequentially adsorbed to the cylinder which is in the vicinity of the semiconductor die 15 The clip 18, therefore, when the holding sheet 12 is peeled off, the effect of suppressing the force applied to the semiconductor die 15 and easily picking up the semiconductor crystal grains 15 can be achieved. In the present embodiment, in a state where the vertical -64 $ is vacuumed, The front surface 15a of the semiconductor die 15 to be picked up is peeled off by the downward pulling force generated by the holding of the film by pushing the cover 23 forward from the close surface Μ upwards. The corner retaining piece 12 is thereby formed to form the peeling end, and then the cover 23-moving' attracts the holding piece 12 to the opening opening portion 42, so that it is easier to achieve the effect of peeling off the holding piece 12. In the present embodiment, the cover 23 is slid from the semiconductor die 15 side toward the other end side 15b, and the holding piece 12 is sequentially sucked to the opening opening portion 42 to perform the holding of the holding piece a, so that even The opening opening portion 42 is covered by the holding piece 12 sucked into the opening opening portion 4 1 , and the cover 23 is squirted to the portion of the non-stripping holding piece 12, and the moon is moved, so that the whole of the holding 12 can be maintained. Attract to the opening to open the net. p 42 gradually peels off and is easy to enter

持片12全部剝離之效果。 ” 又，由於盍23之下面23g係與 邊緣咖線狀接觸而滑動，因此能有效抑制空氣從望體^ 之外部向筐體21之内部侵入，良好維持筐體21内部之真 空’因此能達到有效將保持片12吸引至開口開啟部42中 並剝離之效果。 本實施形態中，由於蓋23之前端23a是曲®，剝離線 53在沿緊貼面22之面内，相對於半導體晶粒15之各端 15a' 15b或相對於滑動方向傾斜，因此能緩和因被筒夾18 籲吸附之部分與未被筒夾！ 8吸附之部分間之微小彎曲變形所 產生之應力，及有效抑制半導體晶粒丨5之損傷。 本實施形態中，由於從緊貼面22向上方前進者係蓋U 之前端23a附近之一部分，蓋23之後端23c未從緊貼面η .向上方前進，因此由於當使蓋23滑動時，蓋23之後端23c 不會撞到鄰接之半導體晶粒b，不會因蓋23之滑動而使鄰 接之半導體晶粒1 5損傷，因此能達到即使周圍有鄰接之半 導體晶粒1 5時亦容易拾取半導體晶粒丨5之效果。 又，本實施形態中，由於載台2〇係藉由載台上下方向 29 驅動機構73相對於保持 仏 I 月12之進退方向僅進行上 作，而未具備對水平方向（>心± μ U上下動 w (/〇保持片12之方向）之蒋韌地 構，因此無對水平方向 動機 機構之背隙（back〗ash)等，相針 沿保持片12之方向夕你里 相對於 之方向之位置之穩定性良好。 之半導體晶粒】5盥蓋μ夕％/ 由於拾取 藉由晶圓保持具水平方向對位係 切。丨72來進行，因此水平方向 對位時’載台20之水平方南仿¥ ρ^ 千6位置穩疋，能達到減低載台20 位置偏差之效果。 牛導體曰曰粒b之對位時產生 參照圖14、圖15說明本發明之其他實施形態。與參昭 圖1〜圖13所說明之實施形態同樣之部分附加同樣的符號並 省略說明。 如圖14所示，載合20且供·. -a# m Μ ϋ，、備，》月動用槽22a，從緊貼面 22凹陷蓋23之厚度，以與蓋23大致同一寬度，從蓋。開 啟側之吸引開口 41之端向載台2〇之外周側延伸；平面 …，連接於滑動用槽22a之底面❿’，與緊貼面22大致 成直角；以及段部22f。滑動用槽22a之側面22h係與吸引 開口 41之側面41b同一面，蓋23之側面2%與滑動用槽 22a之側面22h係構成滑動面。滑動用槽&之底面22a, 與緊貼面22大致平行，在與載台2Q之外周圓筒面無干涉 之位置，蓋23延伸到較關閉吸引開口 41之狀態之蓋23之 後端23c之位置位於載台内周側之位置之端部22c為止。端 4 22c係直線狀，蓋23之後端23c係在蓋23關閉之狀態， 較滑動用槽22a之端部22c向載台20之外周側少許突出。 30 1374513 平面22e係從滑動用槽22a之端部22c向緊貼面22反向之 下側，朝Μ體21之長邊方向垂直延伸.平面22e與滑動用 槽22a之底面22a’之交線形成與蓋23之滑動方向成直角方 向延伸之直線狀之稜線邊緣22d。平面22e係連接於段部 22f，其係從平面22e，與緊貼面22大致平行延伸到筐體2ι 之外周面為止。由於段部22f延伸到圓筒形筐體21之外周 面為止，因此其外周側端22g係沿筐體21之圓筒之圓弧。 於段部22f之兩側，有與滑動用槽22a之側面22h同一面之 側面22j延伸。側面22j與蓋23之側面23b係構成滑動面。 由於蓋23之後端23c係在蓋23關閉吸引開口 4丨之狀熊， 較滑動用槽22a之端部22c及邊緣22d向載台2〇之外=側 少許突出，因此蓋23頂住保持片12之面之反面即下面23§ 係被邊緣22d支撐。 如圖15所示，含邊緣22d與段部22f之外周側端 的面對緊貼面22之角度係角度r，當蓋滑動時，蓋之 :面23g對緊貼面22之傾斜角度為^。由於角度y…吏在 蓋23滑動後之狀態亦保持為較蓋23之下面23经對緊貼面 22之角度α為大之角度7，因此段部22f之外周側不 會與蓋23之後端23c干涉。且，蓋23滑動期間，蓋u之 下面23g係維持與邊緣22d線接觸之狀態。 如圖15所不，只要蓋滑動，蓋23之與頂住保持片12 之表面相反側之下面23g便與邊緣22d接觸而滑動，因此， 邊、、彖22d與蓋23之下自23g之切線成為間隔開大氣壓之筐 體21之外部與真空狀態之營體21之内部之密封線。又， 31 叫 4513 如圖14所示，蓋23之側面23b與滑動用槽22a之側面22j 及蓋23與段部22f之兩侧之側面22h係分別構成滑動面。 因此’能抑制空氣從蓋23之下面23g與滑動用槽22a之底 面22a’之間隙及蓋23之側面23b與各側面22h、22j之間隙 侵入筐體21之内部，因此在使蓋滑動期間，能良好保持筐 體21内部之真空，有效真空吸引保持片I〗至吸引開口 41 中。又’只要蓋滑動’蓋23之後端23c就會從緊貼面22 _ 逐漸朝下方移動，因此，當使蓋滑動時，蓋23之後端23c 不會撞到鄰接之半導體晶粒15，不會因蓋23之滑動而使鄰 接之半導體晶粒15損傷，即使周圍有鄰接之半導體晶粒15 亦可容易拾取半導體晶粒1 5。 以上所說明之本實施形態中，雖說明段部22f從與緊貼 面22大致直角之平面22e向載台2〇之外周側延伸，但亦可 如圖16所示，如參照先前圖卜圖13所說明之實施形態般， 連接於m動用槽22a之底面22a，設置傾斜面22b，段部22f 鲁仗傾斜面22b向載台20之外周側延伸。此時，傾斜面22b 對緊貼面22之角度係較含邊緣22d與段部22f之外周側端 22g之面對緊貼面之角度γ為大之角度。 . 【圖式簡單說明】 . 圖1係表示貼付於保持片之晶圓的說明圖。 圖2係表示貼付於保持片之半導體晶粒的說明圖。 圖3係表示晶圓保持具之構成的說明圖。 圖4係表示本發明實施形態之半導體晶粒之拾取裝置 32 1374513 之構成的說明圖。 圖5係表示本發明實施形態之半導體晶粒之拾取裝置 之載台的立體圖。 圖6係表示本發明實施形態之半導體晶粒之拾取裝置 之載台之吸引開口開啟狀態的俯視圖。 圖7係表示本發明實施形態之半導體晶粒之拾取裝置 之載台之吸引開口關閉狀態與經對位之半導體晶粒之位置 關係的俯視圖。 圖8係表示本發明實施形態之半導體晶粒之拾取裝置 之載台寬度方向之截面圖。 圖9係表示本發明實施形態之半導體晶粒之拾取裝置 之滑件驅動機構開始動作前之狀態的說明圖。 圖1 〇係表示本發明實施形態之半導體晶粒之拾取裝置 之蓋前端從緊貼面前進之狀態的說明圖。 圖11係表示本發明實施形態之半導體晶粒之拾取裝置 之蓋前端從緊貼面前進之狀態的蓋與半導體晶粒與保持片 與筒夾的說明圖。 圖12係表示本發明實施形態之半導體晶粒之拾取裝置 的蓋滑動狀態的說明圖。 vThe effect of the strip 12 being completely peeled off. Further, since the lower 23g of the crucible 23 slides in contact with the edge coffee, it is possible to effectively suppress the intrusion of air from the outside of the body to the inside of the casing 21, and to maintain the vacuum inside the casing 21 well. The effect of effectively attracting the holding piece 12 into the opening opening portion 42 and peeling off. In the present embodiment, since the front end 23a of the cover 23 is a curved piece, the peeling line 53 is in the plane along the abutting surface 22 with respect to the semiconductor die Each of the ends 15a' 15b of the 15 is inclined with respect to the sliding direction, so that the stress generated by the slight bending deformation between the portion attracted by the collet 18 and the portion not adsorbed by the collet 8 can be alleviated, and the semiconductor can be effectively suppressed. In the present embodiment, since the portion of the front end 23a of the lid 23 is advanced upward from the contact surface 22, the rear end 23c of the lid 23 does not advance upward from the contact surface η. When the cover 23 is slid, the rear end 23c of the cover 23 does not hit the adjacent semiconductor die b, and the adjacent semiconductor die 15 is not damaged by the sliding of the cover 23, so that even if there are adjacent semiconductors around Grain 1 5 The effect of picking up the semiconductor die 5 is easy to be obtained. Further, in the present embodiment, the stage 2 is only driven by the drive mechanism 73 in the up and down direction 29 of the stage with respect to the advance/retract direction of the hold 仏I 12; With the horizontal to the direction (> heart ± μ U up and down w (/ 〇 hold the direction of the sheet 12) of the Jiang tough structure, so there is no backlash of the horizontal direction of the mechanism (back ash), etc. In the direction of the sheet 12, the stability of the position relative to the direction is good. The semiconductor die is 5 盥 μ % / 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于Therefore, when the horizontal direction is aligned, the horizontal position of the stage 20 is stabilized, and the effect of reducing the positional deviation of the stage 20 can be achieved. Fig. 15 is a view showing another embodiment of the present invention, and the same portions as those of the embodiment described with reference to Fig. 1 through Fig. 13 are denoted by the same reference numerals, and the description thereof will be omitted. As shown in Fig. 14, the carrier 20 is provided and supplied. Μ ϋ,,备,》月动用槽22a, concave from the close surface 22 The cover 23 has a thickness substantially the same as that of the cover 23, and extends from the end of the suction opening 41 of the opening side toward the outer peripheral side of the stage 2; the plane... is connected to the bottom surface of the sliding groove 22a, and is tight The veneer 22 is substantially at right angles; and the segment portion 22f. The side surface 22h of the sliding groove 22a is flush with the side surface 41b of the suction opening 41, and the side surface 2% of the lid 23 and the side surface 22h of the sliding groove 22a constitute a sliding surface. The bottom surface 22a of the groove & is substantially parallel to the abutting surface 22, and at a position where there is no interference with the outer cylindrical surface of the stage 2Q, the cover 23 extends to the position of the rear end 23c of the cover 23 in a state closer to the suction opening 41. It is located at the end 22c of the position on the inner peripheral side of the stage. The end 4 22c is linear, and the rear end 23c of the lid 23 is in a state in which the lid 23 is closed, and protrudes slightly toward the outer peripheral side of the stage 20 from the end portion 22c of the sliding groove 22a. 30 1374513 The plane 22e extends perpendicularly from the end portion 22c of the sliding groove 22a toward the lower side of the abutting surface 22, and extends perpendicularly to the longitudinal direction of the body 21. The intersection of the plane 22e and the bottom surface 22a' of the sliding groove 22a A linear ridgeline edge 22d extending in a direction perpendicular to the sliding direction of the cover 23 is formed. The flat surface 22e is connected to the segment portion 22f from the flat surface 22e so as to extend substantially parallel to the abutting surface 22 to the outer peripheral surface of the casing 2ι. Since the segment portion 22f extends to the outer peripheral surface of the cylindrical casing 21, the outer peripheral side end 22g thereof is formed along the circular arc of the cylinder of the casing 21. On both sides of the segment portion 22f, the side surface 22j which is flush with the side surface 22h of the sliding groove 22a extends. The side surface 22j and the side surface 23b of the lid 23 constitute a sliding surface. Since the rear end 23c of the cover 23 is closed to the suction opening 4 of the cover 23, the end portion 22c and the edge 22d of the sliding groove 22a protrude slightly toward the side of the stage 2, so that the cover 23 bears against the holding piece. The opposite of the face of 12 is the lower 23 § supported by the edge 22d. As shown in Fig. 15, the angle between the edge 22d and the peripheral end of the segment portion 22f facing the abutting surface 22 is an angle r, and when the cover is slid, the angle of inclination of the surface 23g to the abutting surface 22 is ^. Since the angle y...吏 is maintained after the cover 23 is slid, the angle 23 of the lower surface 23 of the cover 23 is greater than the angle α of the contact surface 22, so that the outer peripheral side of the segment 22f does not end with the rear end of the cover 23. 23c interference. Further, during the sliding of the cover 23, the lower surface 23g of the cover u maintains a state of being in line contact with the edge 22d. As shown in Fig. 15, as long as the cover slides, the lower surface 23g of the cover 23 opposite to the surface against the surface of the holding piece 12 comes into contact with the edge 22d and slides, so that the edge, the ridge 22d and the cover 23 are cut from the line 23g below. It becomes a seal line of the inside of the housing 21 which is separated from the atmospheric pressure and the inside of the body 21 in a vacuum state. Further, 31 is referred to as 4513. As shown in Fig. 14, the side surface 23b of the lid 23 and the side surface 22j of the sliding groove 22a and the side surface 22h of the lid 23 and the both sides of the segment portion 22f constitute a sliding surface. Therefore, it is possible to prevent the air from entering the inside of the casing 21 from the gap between the lower surface 23g of the lid 23 and the bottom surface 22a' of the sliding groove 22a and the side surface 23b of the lid 23 and the side surfaces 22h and 22j. Therefore, during the sliding of the lid, The vacuum inside the casing 21 can be well maintained, and the vacuum is held by the holding piece I to the suction opening 41. Moreover, as long as the cover slides, the rear end 23c of the cover 23 gradually moves downward from the abutting surface 22 _, so that when the cover is slid, the rear end 23c of the cover 23 does not hit the adjacent semiconductor die 15 and does not The adjacent semiconductor crystal grains 15 are damaged by the sliding of the cover 23, and the semiconductor crystal grains 15 can be easily picked up even if the adjacent semiconductor crystal grains 15 are surrounded. In the present embodiment described above, the segment portion 22f is extended from the plane 22e substantially perpendicular to the abutting surface 22 to the outer peripheral side of the stage 2A. However, as shown in Fig. 16, the reference may be made to the previous drawing. As in the embodiment described in the thirteenth embodiment, the bottom surface 22a of the m-moving groove 22a is connected to the inclined surface 22b, and the stepped portion 22f of the inclined surface 22b extends toward the outer peripheral side of the stage 20. At this time, the angle of the inclined surface 22b to the abutting surface 22 is larger than the angle γ between the edge 22d and the outer peripheral end 22g of the segment 22f facing the abutting surface. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory view showing a wafer attached to a holding sheet. Fig. 2 is an explanatory view showing a semiconductor die attached to a holding sheet. Fig. 3 is an explanatory view showing the configuration of a wafer holder. Fig. 4 is an explanatory view showing the configuration of a semiconductor die pick-up device 32 1374513 according to an embodiment of the present invention. Fig. 5 is a perspective view showing a stage of a semiconductor die pick-up device according to an embodiment of the present invention. Fig. 6 is a plan view showing a state in which the suction opening of the stage of the semiconductor die pick-up device according to the embodiment of the present invention is opened. Fig. 7 is a plan view showing the positional relationship between the closed state of the suction opening of the stage of the semiconductor wafer pick-up apparatus and the aligned semiconductor crystal grains in the semiconductor wafer pick-up apparatus according to the embodiment of the present invention. Fig. 8 is a cross-sectional view showing the stage width direction of the semiconductor wafer pick-up device according to the embodiment of the present invention. Fig. 9 is an explanatory view showing a state before the slider drive mechanism of the semiconductor die pick-up device according to the embodiment of the present invention starts operating. Fig. 1 is an explanatory view showing a state in which the tip end of the lid of the semiconductor wafer pick-up device according to the embodiment of the present invention advances from the adhering surface. Fig. 11 is an explanatory view showing a cover, a semiconductor die, and a holding piece and a collet in a state in which the tip end of the pick-up device of the semiconductor die according to the embodiment of the present invention advances from the contact surface. Fig. 12 is an explanatory view showing a state in which the cover of the semiconductor die pick-up device according to the embodiment of the present invention is slid. v

丨卿 <拾取裝置 與筒夾的說明 晶粒之拾取 圖1 4係表示本發明其他實施形態之半導體 裳置之載台的立體圖。 33 1374513 圖1 5係表示本發明其他實施形態之半導體晶粒之拾取 裝置之蓋前端從緊貼面前進狀態的說明圖。 圖1 6係表示本發明其他實施形態之半導體晶粒之拾取 裝置之蓋前端從緊貼面前進狀態的說明圖。丨 & & 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 晶粒 。 。 。 。 。 。 。 。 。 。 。 33 1374513 Fig. 1 is an explanatory view showing a state in which the tip end of the lid of the semiconductor wafer pick-up device according to the other embodiment of the present invention is advanced from the adhering surface. Fig. 16 is an explanatory view showing a state in which the tip end of the lid of the semiconductor wafer pick-up device according to the other embodiment of the present invention is advanced from the adhering surface.

【主要元件符號說明】 10 晶圓保持具 11 晶圓 12 保持片 13 環 14 切入間隙 15 半導體晶粒 15a 一端 15b 另一端 16 擴張環 17 環壓板 18 筒夹 19 吸附孔 20 載台 21 筐體 22 緊貼面 22a 滑動用槽 22a5 底面 22b 傾斜面 34 1374513 22c 端部 22d 邊緣 22e 平面 22f 段部 22g 外周側端 22h、22j 側面 23 蓋 23a 前端 23b 側面 23c 後端 23e 倒角部分 23f 臂 23g 下面 24 基體部 25 驅動部 41 吸引開口 41a 端面 41b 側面 42 開口開啟部 53 剝離線 70 控制部 71 真空裝置 72 晶圓保持具 73 載台上下方 35 1374513 100 半導體晶粒之拾取裝置 300 滑件驅動機構 321a 止動件 326 第1連桿 326a ' 329a 卡合槽 326b 軸 326c 滾輪 327 、 328 、 330 、 '330a 銷 329 第2連桿 331 導軌 332 滑件 364 縱槽 370 活塞 371 凸緣 373 彈簧 381 馬達 383 凸輪 500 切線 a 、β 、ύ 角度 36[Main component symbol description] 10 Wafer holder 11 Wafer 12 Holding sheet 13 Ring 14 Cutting gap 15 Semiconductor die 15a One end 15b The other end 16 Expansion ring 17 Ring pressure plate 18 Collet 19 Adsorption hole 20 Stage 21 Housing 22 Adhering surface 22a Sliding groove 22a5 Bottom surface 22b Inclined surface 34 1374513 22c End 22d Edge 22e Plane 22f Segment 22g Peripheral side end 22h, 22j Side 23 Cover 23a Front end 23b Side 23c Rear end 23e Chamfered portion 23f Arm 23g Below 24 Base portion 25 Driving portion 41 Suction opening 41a End surface 41b Side surface 42 Opening opening portion 53 Peeling line 70 Control portion 71 Vacuum device 72 Wafer holder 73 Upper and lower stages of the stage 35 1374513 100 Pickup device 300 for semiconductor die Slider drive mechanism 321a Stop 326 1st link 326a ' 329a Engagement groove 326b Shaft 326c Roller 327, 328, 330, '330a Pin 329 2nd link 331 Guide 332 Slide 364 Longitudinal groove 370 Piston 371 Flange 373 Spring 381 Motor 383 Cam 500 tangent a, β, ύ angle 36

Claims (1)

十、申請專利範圍： 1,種半導體晶粒之拾取裝置，用以拾取貼付於保持片 之半導體晶粒，其特徵在於，具備： 圓筒形載台，含緊貼面，該緊貼面係緊貼於貼付保持 片之半導體晶粒面之反面； —吸引開口’設於緊貼面，與拾取之半導體晶粒大致同 —寬度’從載台内周侧向外周側直線狀延伸； 蓋，與吸引開口寬度大致同一寬度，且以關閉吸引開 口侧之前端能從緊貼面自 目由刖進之方式設於載台，沿緊貼 面〉月動以開閉吸引開口，去 田使盖刖從緊貼面月丨】進時，蓋 之頂起保持片的面係從蓋前 . 蓋刖鳊側向盍開啟側之後端側向下 動用槽，從緊貼面凹陷蓋之厚度，與 度’從蓋開啟側之吸引開口 ，至盍在與載台外周之逼 面無干涉之位置關閉吸引開口 .^ , 疋狀態下之蓋後端位置之 σ内周側位置向載台外周面延伸； 傾斜面，從載台外周側端之滑 相反側延伸；以及 倌您囱向緊貼面 筒夾，用以吸附半導體晶粒； S拾取半導體晶粒時，使蓋前端從 保持片與半導體晶粒，—邊使蓋伴r進’頂 與滑動用槽底面與傾斜面之邊保持片之面之反 序開啟吸弓丨開口，將保持 、-邊使蓋滑動而 口，從拾取之半導體晶粒依序_伴=已開啟之吸引 禾待片，並將半導體 37 1374513 粒依序吸附至在拾取之半導體晶粒之上方近處待機之筒 夾0 2·如申請專利範圍第1項之半導體晶粒之拾取裝置，其 中’傾斜面相對緊貼面之傾斜角度較蓋之頂起保持片之面 之反面相對緊貼面之傾斜角度為大。 3. 如申請專利範圍第！項之半導體晶粒之拾取裝置，其 具備段部，從傾斜面沿緊貼面延伸至載台外周面； 含邊緣與段部之載台外周側端之面相對緊貼面之角度 較盖之頂起保持片之面之反面相對緊貼面之傾斜角度為 大。 4. 如申請專利範圍第3項之半導體晶粒之拾取裝置，其 中’傾斜面係相對於緊貼面之大致直角的平面。 5. 如申晴專利範圍第1〜4項中任一項之半導體晶粒之 拾取裝置’具備：滑件’安裝有於吸引開口寬度方向延伸 的銷’藉由設於載台内部之滑件驅動機構於吸引開口之延 伸方向滑動’並且相對於緊貼面進退； 蓋備有從前端朝關閉吸引開口之侧突出的臂，透過該 臂而能自由轉動地安裝於滑件的銷上。 6. —種半導體晶粒之拾取方法，係使用半導體晶粒之拾 取裝置來拾取貼付於保持片之半導體晶粒；該半導體晶粒 之拾取裝置具備：圓筒形載台，含緊貼面，該緊貼面係緊 貼於貼付保持片之半導體晶粒面之反面；吸引開口，設於 緊貼面’以與拾取之半導體晶粒大致同一寬度，從載台内 周側向外周側直線狀延伸；蓋，與吸引開口寬度大致同一 38 1374513 寬度，且設於載台以使關閉^開口之側之前端 面自由前進，沿緊貼面滑動以開閉吸引.，當 = 從緊貼面前進時，蓋之頂起保持片的面係從蓋前 = 開啟側之後端側向下傾斜；滑動用槽，從緊貼面凹陷= 厚度，與蓋大致同一寬度，從 盍之 蓋在與載台外周之圓筒面益干^ 吸引開口端’至 四』回…、干涉之位置關閉吸引 邊下之盍後端位置之載台内周側位置向載台外周面延伸. 傾斜:，從載台外周側端之滑動用槽底面向緊貼面之相反 = 及筒夹’用以吸附半導體晶粒;其特徵在於， 對準步驟，使拾取之半導曰 之蓋前端，使蓋之寬卢方6粒之一端對準關閉狀態 位置一致；以及 罝，、+導體晶粒之寬度方向 導體=步U蓋前端從緊貼面前進，頂起保持片與半 槽底面與二t蓋之頂起保持片之面之反面與滑動用 才曰底面與傾斜面之邊緣接觸、一 引開口，將保持片依序吸引5 p 月動而依序開啟吸 之半導體曰A 已開啟之吸引開口，從拾取 體S曰粒依序剝離保持片，並且將 附至在拾取之半導體晶粒之上方近處待機之筒：。 十一、蹰式： 如次頁 39X. Patent application scope: 1. A pick-up device for a semiconductor die for picking up a semiconductor die attached to a holding chip, characterized in that: a cylindrical carrier having a tight surface, the adhesive surface Abutting against the opposite side of the semiconductor die face of the attaching holding piece; the attracting opening is provided on the abutting surface, substantially the same as the picked semiconductor die - the width 'linearly extending from the inner peripheral side to the outer peripheral side of the stage; The width is approximately the same as the width of the suction opening, and the front end of the suction opening side can be placed on the stage from the contact surface, and the suction opening is opened and closed along the close surface. From the close-fitting side of the moon 丨 进 , , , , , , , , , , , , , , , , , 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖 盖'From the suction opening on the opening side of the cover, to the position where the suction opening is closed at a position that does not interfere with the pressing surface of the outer periphery of the stage. ^, the position of the inner side of the σ at the rear end position of the cover in the 疋 state extends toward the outer peripheral surface of the stage; Inclined surface from the outer circumference of the stage Sliding on the opposite side; and 囱 囱 囱 紧 面 面 , , , , 吸附 吸附 吸附 吸附 吸附 吸附 吸附 吸附 吸附 吸附 吸附 吸附 吸附 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾 拾The top of the top and the bottom surface of the sliding groove and the side of the inclined surface hold the surface of the sheet in reverse order to open the opening of the suction bow, and the edge of the sliding cover is held, and the semiconductor wafer is sequentially sucked from the picked-up semiconductor film. Waiting for the film, and sequentially adsorbing the semiconductor 37 1374513 particles to the collet which is in the vicinity of the picked-up semiconductor die. The semiconductor wafer pick-up device according to the first claim of the patent scope, wherein the 'inclined surface The inclination angle of the relatively close surface is larger than the inclination angle of the opposite surface of the surface of the holding piece which is the top of the cover. 3. If you apply for a patent scope! The semiconductor wafer pick-up device of the present invention has a segment portion extending from the inclined surface along the abutting surface to the outer peripheral surface of the stage; and the surface of the outer peripheral side end of the stage including the edge portion and the segment portion is relatively close to the surface The angle of inclination of the opposite side of the face of the lifting piece to the abutting surface is large. 4. The pick-up device for a semiconductor die according to claim 3, wherein the 'inclined surface is a plane perpendicular to a substantially right angle of the abutting surface. 5. The pick-up device for a semiconductor die according to any one of the first to fourth aspects of the present invention is characterized in that: the slider is mounted with a pin extending in the width direction of the suction opening by a slider provided inside the stage The drive mechanism slides in the extending direction of the suction opening and advances and retreats with respect to the abutting surface. The cover is provided with an arm projecting from the front end toward the side close to the suction opening, and is rotatably attached to the pin of the slider through the arm. 6. A method for picking up a semiconductor die by picking up a semiconductor die attached to a holding chip using a semiconductor die pick-up device; the semiconductor die pick-up device comprising: a cylindrical carrier having a tight surface, The abutting surface is in close contact with the opposite surface of the semiconductor die surface of the bonding holding piece; the suction opening is provided on the abutting surface to be substantially the same width as the picked semiconductor die, and is linear from the inner circumference side to the outer circumference side of the stage The cover is substantially the same as the width of the suction opening and has a width of 38 1374513, and is disposed on the stage so that the front end of the opening is free to advance, and slides along the abutting surface to open and close the suction. When = is advanced from the close surface, The surface of the top of the cover holds the surface of the holding piece downward from the front side of the cover = the side of the opening side; the groove for sliding is recessed from the close surface = thickness, substantially the same width as the cover, and the cover of the cover is on the outer periphery of the stage Cylindrical surface 干 dry ^ attracts the open end 'to four' back..., the position of the interference closes the position of the inner side of the stage at the rear end position of the suction side, and extends to the outer peripheral surface of the stage. Tilt: from the outer peripheral side of the stage Sliding end The bottom of the groove faces the opposite side of the contact surface = and the collet is used to adsorb the semiconductor die; and the alignment step is such that the front end of the cover is picked up to align one end of the cover of the cover 6 The closed state is in the same position; and the width direction conductor of the +, + conductor die = the front end of the step U is advanced from the abutting surface, and the opposite side of the holding piece and the bottom surface of the half groove and the top surface of the two t-covers are The sliding bottom surface is in contact with the edge of the inclined surface, and an opening is opened, and the holding piece is sequentially attracted by 5 p months to sequentially open the suction opening of the semiconductor 曰A that has been opened, and the particles are sequentially peeled off from the picking body S. Hold the sheet and attach it to the cartridge that is near the top of the picked semiconductor die: XI, 蹰: as the next page 39
TW97136281A 2008-06-30 2008-09-22 Semiconductor die pickup apparatus and semiconductor die pickup method TW201001614A (en)

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JP4927979B2 (en) 2010-09-28 2012-05-09 株式会社新川 Semiconductor die pick-up device and semiconductor die pick-up method using the device
KR20170122287A (en) 2011-02-28 2017-11-03 샌디스크 세미컨덕터 (상하이) 컴퍼니, 리미티드 Non-uniform vacuum profile die attach tip
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