TWI369590B - Treatment liquid for resist substrate, and method of treating resist substrate using the same - Google Patents

Treatment liquid for resist substrate, and method of treating resist substrate using the same

Info

Publication number
TWI369590B
TWI369590B TW096104392A TW96104392A TWI369590B TW I369590 B TWI369590 B TW I369590B TW 096104392 A TW096104392 A TW 096104392A TW 96104392 A TW96104392 A TW 96104392A TW I369590 B TWI369590 B TW I369590B
Authority
TW
Taiwan
Prior art keywords
resist substrate
same
treatment liquid
treating
substrate
Prior art date
Application number
TW096104392A
Other languages
English (en)
Other versions
TW200736853A (en
Inventor
Noya Go
Kobayashi Masakazu
Shimazaki Ryuta
Original Assignee
Az Electronic Materials Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Japan filed Critical Az Electronic Materials Japan
Publication of TW200736853A publication Critical patent/TW200736853A/zh
Application granted granted Critical
Publication of TWI369590B publication Critical patent/TWI369590B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G03F7/327—Non-aqueous alkaline compositions, e.g. anhydrous quaternary ammonium salts
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Environmental & Geological Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
TW096104392A 2006-02-14 2007-02-07 Treatment liquid for resist substrate, and method of treating resist substrate using the same TWI369590B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006036932A JP2007219009A (ja) 2006-02-14 2006-02-14 レジスト基板用処理液とそれを用いたレジスト基板の処理方法

Publications (2)

Publication Number Publication Date
TW200736853A TW200736853A (en) 2007-10-01
TWI369590B true TWI369590B (en) 2012-08-01

Family

ID=38371479

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096104392A TWI369590B (en) 2006-02-14 2007-02-07 Treatment liquid for resist substrate, and method of treating resist substrate using the same

Country Status (7)

Country Link
US (1) US7998664B2 (zh)
JP (1) JP2007219009A (zh)
KR (1) KR101340863B1 (zh)
CN (1) CN101384969B (zh)
DE (1) DE112007000405T5 (zh)
TW (1) TWI369590B (zh)
WO (1) WO2007094299A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8039201B2 (en) * 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8445181B2 (en) 2010-06-03 2013-05-21 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US20130040246A1 (en) * 2011-08-09 2013-02-14 Tokyo Electron Limited Multiple chemical treatment process for reducing pattern defect
US9551936B2 (en) 2011-08-10 2017-01-24 3M Innovative Properties Company Perfluoroalkyl sulfonamides surfactants for photoresist rinse solutions
US9097977B2 (en) 2012-05-15 2015-08-04 Tokyo Electron Limited Process sequence for reducing pattern roughness and deformity
JP6012377B2 (ja) * 2012-09-28 2016-10-25 東京応化工業株式会社 レジストパターン形成方法
JP6309802B2 (ja) * 2014-03-26 2018-04-11 東京応化工業株式会社 パターン微細化用被覆剤
JP2016139774A (ja) * 2015-01-23 2016-08-04 富士フイルム株式会社 パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液
JP6735205B2 (ja) * 2016-10-06 2020-08-05 東京応化工業株式会社 レジストパターンのラフネスを低減させるために用いられる被覆剤、及びラフネスが低減されたレジストパターンの製造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6825156B2 (en) * 2002-06-06 2004-11-30 Ekc Technology, Inc. Semiconductor process residue removal composition and process
JP2813862B2 (ja) * 1994-07-05 1998-10-22 荒川化学工業株式会社 洗浄剤組成物
US5501815A (en) * 1994-09-26 1996-03-26 Ecolab Inc. Plasticware-compatible rinse aid
JP3326041B2 (ja) 1995-02-20 2002-09-17 花王株式会社 ハイブリッドｉｃ基板用洗浄剤組成物
JP4069396B2 (ja) 1997-01-14 2008-04-02 荒川化学工業株式会社 洗浄剤組成物
JP3617762B2 (ja) * 1997-11-25 2005-02-09 三菱製紙株式会社 平版印刷版の製版方法
DE19853216B4 (de) 1997-11-25 2007-08-02 Mitsubishi Paper Mills Limited Verfahren zur Herstellung einer lithographischen Druckplatte und in demselben zu verwendende Behandlungslösung
JP4027494B2 (ja) * 1998-04-07 2007-12-26 花王株式会社 リンス剤組成物
US7521405B2 (en) * 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
US7129199B2 (en) 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US20040029395A1 (en) 2002-08-12 2004-02-12 Peng Zhang Process solutions containing acetylenic diol surfactants
JP3410403B2 (ja) * 1999-09-10 2003-05-26 東京応化工業株式会社 ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
JP4025953B2 (ja) * 2001-01-05 2007-12-26 荒川化学工業株式会社 洗浄剤組成物
CN1248057C (zh) * 2001-05-21 2006-03-29 东进瑟弥侃株式会社 抗蚀剂剥离剂组合物
US20040185370A1 (en) 2001-05-21 2004-09-23 Ji-Hum Baik Resist remover composition
JP4698123B2 (ja) * 2001-05-21 2011-06-08 ドウジン セミケム カンパニー リミテッド レジスト除去剤組成物
JP2003084455A (ja) * 2001-09-13 2003-03-19 Matsushita Electric Ind Co Ltd パターン形成方法
JP2003088455A (ja) 2001-09-19 2003-03-25 Usui Kosan Kk 多重画作製セット
JP4522626B2 (ja) * 2001-09-28 2010-08-11 花王株式会社 リンス液
JP4045180B2 (ja) * 2002-12-03 2008-02-13 Ａｚエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
JP2006016438A (ja) 2004-06-30 2006-01-19 Dongwoo Fine-Chem Co Ltd 電子部品洗浄液
JP4767829B2 (ja) * 2006-01-11 2011-09-07 東京応化工業株式会社 リソグラフィー用洗浄剤及びそれを用いたレジストパターン形成方法

Also Published As

Publication number Publication date
KR20080103565A (ko) 2008-11-27
DE112007000405T5 (de) 2009-04-02
JP2007219009A (ja) 2007-08-30
US7998664B2 (en) 2011-08-16
US20100233634A1 (en) 2010-09-16
TW200736853A (en) 2007-10-01
KR101340863B1 (ko) 2013-12-13
CN101384969B (zh) 2011-11-02
CN101384969A (zh) 2009-03-11
WO2007094299A1 (ja) 2007-08-23

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees