TWI369590B - Treatment liquid for resist substrate, and method of treating resist substrate using the same - Google Patents
Treatment liquid for resist substrate, and method of treating resist substrate using the sameInfo
- Publication number
- TWI369590B TWI369590B TW096104392A TW96104392A TWI369590B TW I369590 B TWI369590 B TW I369590B TW 096104392 A TW096104392 A TW 096104392A TW 96104392 A TW96104392 A TW 96104392A TW I369590 B TWI369590 B TW I369590B
- Authority
- TW
- Taiwan
- Prior art keywords
- resist substrate
- same
- treatment liquid
- treating
- substrate
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
- G03F7/327—Non-aqueous alkaline compositions, e.g. anhydrous quaternary ammonium salts
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Environmental & Geological Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006036932A JP2007219009A (ja) | 2006-02-14 | 2006-02-14 | レジスト基板用処理液とそれを用いたレジスト基板の処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200736853A TW200736853A (en) | 2007-10-01 |
TWI369590B true TWI369590B (en) | 2012-08-01 |
Family
ID=38371479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096104392A TWI369590B (en) | 2006-02-14 | 2007-02-07 | Treatment liquid for resist substrate, and method of treating resist substrate using the same |
Country Status (7)
Country | Link |
---|---|
US (1) | US7998664B2 (zh) |
JP (1) | JP2007219009A (zh) |
KR (1) | KR101340863B1 (zh) |
CN (1) | CN101384969B (zh) |
DE (1) | DE112007000405T5 (zh) |
TW (1) | TWI369590B (zh) |
WO (1) | WO2007094299A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8039201B2 (en) * | 2007-11-21 | 2011-10-18 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US8445181B2 (en) | 2010-06-03 | 2013-05-21 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US20130040246A1 (en) * | 2011-08-09 | 2013-02-14 | Tokyo Electron Limited | Multiple chemical treatment process for reducing pattern defect |
US9551936B2 (en) | 2011-08-10 | 2017-01-24 | 3M Innovative Properties Company | Perfluoroalkyl sulfonamides surfactants for photoresist rinse solutions |
US9097977B2 (en) | 2012-05-15 | 2015-08-04 | Tokyo Electron Limited | Process sequence for reducing pattern roughness and deformity |
JP6012377B2 (ja) * | 2012-09-28 | 2016-10-25 | 東京応化工業株式会社 | レジストパターン形成方法 |
JP6309802B2 (ja) * | 2014-03-26 | 2018-04-11 | 東京応化工業株式会社 | パターン微細化用被覆剤 |
JP2016139774A (ja) * | 2015-01-23 | 2016-08-04 | 富士フイルム株式会社 | パターン処理方法、半導体基板製品の製造方法およびパターン構造の前処理液 |
JP6735205B2 (ja) * | 2016-10-06 | 2020-08-05 | 東京応化工業株式会社 | レジストパターンのラフネスを低減させるために用いられる被覆剤、及びラフネスが低減されたレジストパターンの製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6825156B2 (en) * | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
JP2813862B2 (ja) * | 1994-07-05 | 1998-10-22 | 荒川化学工業株式会社 | 洗浄剤組成物 |
US5501815A (en) * | 1994-09-26 | 1996-03-26 | Ecolab Inc. | Plasticware-compatible rinse aid |
JP3326041B2 (ja) | 1995-02-20 | 2002-09-17 | 花王株式会社 | ハイブリッドic基板用洗浄剤組成物 |
JP4069396B2 (ja) | 1997-01-14 | 2008-04-02 | 荒川化学工業株式会社 | 洗浄剤組成物 |
JP3617762B2 (ja) * | 1997-11-25 | 2005-02-09 | 三菱製紙株式会社 | 平版印刷版の製版方法 |
DE19853216B4 (de) | 1997-11-25 | 2007-08-02 | Mitsubishi Paper Mills Limited | Verfahren zur Herstellung einer lithographischen Druckplatte und in demselben zu verwendende Behandlungslösung |
JP4027494B2 (ja) * | 1998-04-07 | 2007-12-26 | 花王株式会社 | リンス剤組成物 |
US7521405B2 (en) * | 2002-08-12 | 2009-04-21 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
US7129199B2 (en) | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
US20040029395A1 (en) | 2002-08-12 | 2004-02-12 | Peng Zhang | Process solutions containing acetylenic diol surfactants |
JP3410403B2 (ja) * | 1999-09-10 | 2003-05-26 | 東京応化工業株式会社 | ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法 |
JP4025953B2 (ja) * | 2001-01-05 | 2007-12-26 | 荒川化学工業株式会社 | 洗浄剤組成物 |
CN1248057C (zh) * | 2001-05-21 | 2006-03-29 | 东进瑟弥侃株式会社 | 抗蚀剂剥离剂组合物 |
US20040185370A1 (en) | 2001-05-21 | 2004-09-23 | Ji-Hum Baik | Resist remover composition |
JP4698123B2 (ja) * | 2001-05-21 | 2011-06-08 | ドウジン セミケム カンパニー リミテッド | レジスト除去剤組成物 |
JP2003084455A (ja) * | 2001-09-13 | 2003-03-19 | Matsushita Electric Ind Co Ltd | パターン形成方法 |
JP2003088455A (ja) | 2001-09-19 | 2003-03-25 | Usui Kosan Kk | 多重画作製セット |
JP4522626B2 (ja) * | 2001-09-28 | 2010-08-11 | 花王株式会社 | リンス液 |
JP4045180B2 (ja) * | 2002-12-03 | 2008-02-13 | Azエレクトロニックマテリアルズ株式会社 | リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法 |
JP2006016438A (ja) | 2004-06-30 | 2006-01-19 | Dongwoo Fine-Chem Co Ltd | 電子部品洗浄液 |
JP4767829B2 (ja) * | 2006-01-11 | 2011-09-07 | 東京応化工業株式会社 | リソグラフィー用洗浄剤及びそれを用いたレジストパターン形成方法 |
-
2006
- 2006-02-14 JP JP2006036932A patent/JP2007219009A/ja active Pending
-
2007
- 2007-02-07 TW TW096104392A patent/TWI369590B/zh not_active IP Right Cessation
- 2007-02-13 US US12/223,310 patent/US7998664B2/en not_active Expired - Fee Related
- 2007-02-13 CN CN2007800053647A patent/CN101384969B/zh not_active Expired - Fee Related
- 2007-02-13 WO PCT/JP2007/052485 patent/WO2007094299A1/ja active Application Filing
- 2007-02-13 KR KR1020087022539A patent/KR101340863B1/ko active IP Right Grant
- 2007-02-13 DE DE112007000405T patent/DE112007000405T5/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR20080103565A (ko) | 2008-11-27 |
DE112007000405T5 (de) | 2009-04-02 |
JP2007219009A (ja) | 2007-08-30 |
US7998664B2 (en) | 2011-08-16 |
US20100233634A1 (en) | 2010-09-16 |
TW200736853A (en) | 2007-10-01 |
KR101340863B1 (ko) | 2013-12-13 |
CN101384969B (zh) | 2011-11-02 |
CN101384969A (zh) | 2009-03-11 |
WO2007094299A1 (ja) | 2007-08-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |