1356653 100年8月25円修正替換頁 九、發明說明： ， 【發明所屬之技術領域】 本發明是有關於一種有機發光二極體面板及其晝素 結構與製造方法’且特別是有關於一種以矩陣排列之有機 發光二極體面板及其晝素結構與製造方法。 ； 【先前技術】 隨著顯不科技的進步，發展出一種有機發光二極體 (organic light emitting diode，〇LED)面板。由於有機 發光二極體面板之具有不需背光源、對比度高、厚度薄、 視角廣、反應速度快、可用於撓曲性面板、使用溫度範圍 廣、構造及製程較簡單等優異之特性，因此被認爲是下一 代的平面顯示器新興應用技術。目前已逐漸應用於各種消 費型電子產品’例如手機的外銀幕、隨身聽的顯示面板等 等。 有機發光二極體面板之發光原理類似一般二極體。同 樣是利用材料的特性，將電子與電洞分別由電子傳輸層 (ElectronTransportLayer，ETL)和電洞傳輸層（Hole Transport Layer ’ HTL)發出，並在發光層（Emitting1356653 Aug. 25, pp. 25, pp. IX. Description of the Invention: [Technical Field] The present invention relates to an organic light-emitting diode panel and a structure and a method for manufacturing the same, and particularly relates to a An organic light-emitting diode panel arranged in a matrix and a structure and a manufacturing method thereof. [Prior Art] With the advancement of the technology, an organic light emitting diode (〇LED) panel has been developed. The organic light-emitting diode panel has excellent characteristics such as no backlight, high contrast, thin thickness, wide viewing angle, fast reaction speed, flexible panel, wide temperature range, simple structure and simple process. It is considered to be the next generation of flat panel display emerging application technology. It has been gradually applied to various consumer electronic products such as the external screen of mobile phones, display panels of walkmans, and the like. The principle of illumination of the organic light-emitting diode panel is similar to that of a general diode. The same is true of the material properties, the electrons and holes are respectively emitted by the ElectroTransport Layer (ETL) and the Hole Transport Layer (HTL), and the light-emitting layer (Emitting)
Material Layer，EML)結合。在電子及電洞的結合過程 中，將電子激發的形式降回基態，將多餘的能量以光波的 形式釋出。視材料的不同，電子與電洞所具的能階也有差 異，進而產生不同波長與不同顏色之光線。 1356653 , 100年8月25日修正替換頁 【發明内容】 本發明係有關於一種有機發光二極體面板及其書素 結構與製造方法，其利用將第一電極設置於基板上，並將 第二電極與第一電極分隔式設置於第一電極上，且發光岸 設置於第電極及第二電極上方。使得有機發光二極體面 板及其晝素結構與製造方法至少具有「畫素結構開口率 大」、「第一電極及第二電極製作容易」、「發光路經多樣 化」、「矩陣式控制晝素結構」、「可控制發光量大小」、「色 彩多樣化」、「提高製程良率」及「減少遮罩成本」之優點。 根據本發明之第一部份，提出一種有機發光二極體^ 素結構。有機發光二極體晝素結構包括一基板、—第一: 極、-第二電極及一發光層。第一電極係設置 ：： 面上。第二電極係設置於部分之第一電極之上:一、 :與第-電極相互隔開。發光層係設一；：：極 電，。發光層係與第-電極及第二電極電性;及弟二 板。有機發光-紘辨而缸目士Λ + 九一極體面 數個畫素結構=3 =，複數線、 -電極、數條第二電極及 反:括:基板、數條第 :上。各第-電極係對應於各行係設置於基 重疊於第-電極之上。各第二；素結構。第二電極係 ，的部分區域。第二電極並愈第一：對應於各列之畫素結 置於第-電極及第二電極之上電= 目互隔開。發光層 及弟二電極電性連接。 上發光層係與第1極 7 根據本發明之第三部分，提出 卿肋日修正替換頁 板之製造方法。有機發光二極體心種有機發光二極體面 晝素結構。有機發光二極體面板之排列之數個 步驟。提供-基板。形成數條第；===包括以下 電極係對應於各行之晝素結構。形板t各第- 電極之上，各第二電極係對應於各列之一 域’第二電極並與第-電極相 區 -電極及第二電極之上，形成一發光層於第 電_接。 i料層彳續第—電喊第二電極 為讓本發明之上述内容能更明顯易懂，下文特舉一較 只施例，並配合所附iU，作詳細說明如下： 【實施方式】 請同時參照第1〜3圖。第i圖繪示依照本發明較佳 實施例之有機發光二極體面板1〇〇之基板18〇、第—電極 U0及第二電極120之示意圖’第2圖繪示沿第丨圖之截 面線2-2’之一有機發光二極體畫素結構ρι〇〇的剖面圖。 如第1圖所示，有機發光二極體面板100具有矩陣排列之 數個有機發光二極體晝素結構P100。有機發光二極體面板 至少包括一基板180、數條第一電極11〇、數條第二電 極120及一發光層130 (發光層130繪示於第2圖中）。第 電極110係設置於基板丨8 0上。各條第一電極110係對 應於各行之晝素結構P100。第二電極120係重疊於第一電 極110之上。各條第二電極120係對應於各列之晝素結構 100年8月25日修正替換頁 P100的部分區域。 p應由第2圖所示’在其中之—有機發光二極體畫素結構 —_第電極110及第二電極120係堆疊於基板180 传々弟署认電極120並與第一電極110相互隔開。發光層130 ;第一電極U〇及第二電極120之上，發光層130 ^電極m及第二電極12G電性連接。在本實施例 一帝弟電極110為一陽極，第二電極120為一陰極，第 “極110透過弩光層i30與第二電極⑽橋接。 ㈣在第」圖中，第一電S110及第二電S120係為線狀 Γ且第—電極110及第二電極120係交錯排列·。也就 從第2圖之剖面圖來看，第一電極110及第二電極 120係部分重疊。 ^夕卜’有機發光二極體面板1〇〇及其晝素結構_ =一矣巴緣層160。絕緣層16〇係設置於第一電極11〇 及第-電極120之間’以相互隔開第一電極11{)及第二電 極⑵。如第2圖所示，絕緣層16〇包括一第一絕緣層i6i 及一第—絕緣層162 ’第i緣層161係設置於第-電極 110上。第—絕緣層162及第二電極12〇係堆疊於第一絕 緣層161 _h。第-絕緣層161將第一電極11(^第二電極 ⑽之重疊區域隔開，第二絕緣層162並將第一電極ιι〇 及第了電極12G上方之區域隔開，以避免直接電性接觸。 其中第-絕緣層161或第二絕緣層162可以包含光阻間隔 (photo spacer)材料。 如第1圖所示，各個晝素結構P100包括-第-區域 1356653 !00年S月2S日修正替換頁Material Layer, EML). In the process of combining electrons and holes, the form of electron excitation is returned to the ground state, and the excess energy is released in the form of light waves. Depending on the material, the energy levels of electrons and holes are also different, resulting in light of different wavelengths and different colors. 1356653, augmented replacement page of August 25, 100. SUMMARY OF THE INVENTION The present invention relates to an organic light-emitting diode panel and a book structure and manufacturing method thereof, which utilize a first electrode on a substrate, and The two electrodes are disposed on the first electrode separately from the first electrode, and the light emitting shore is disposed above the first electrode and the second electrode. The organic light-emitting diode panel and its halogen structure and manufacturing method have at least "large aperture ratio of pixel structure", "easy fabrication of first electrode and second electrode", "diversification of illumination path", and "matrix control" The advantages of the structure of 昼, "controllable illuminance", "color diversification", "improving process yield" and "reducing mask cost". According to a first aspect of the invention, an organic light emitting diode structure is proposed. The organic light emitting diode halogen structure comprises a substrate, a first electrode, a second electrode and a light emitting layer. The first electrode system is set to :: face. The second electrode is disposed on a portion of the first electrode: a: separated from the first electrode. The illuminating layer is provided with one;:: polar,. The light-emitting layer is electrically connected to the first electrode and the second electrode; and the second plate. Organic light---------------------------------------------------------- Each of the first electrode layers is disposed on the substrate so as to overlap the first electrode. Each second; prime structure. Part of the second electrode system. The second electrode is more first: the pixel corresponding to each column is placed on the first electrode and the second electrode. The light-emitting layer and the second electrode are electrically connected. The upper light-emitting layer and the first electrode 7 According to the third part of the present invention, a method of manufacturing the rib-corrected replacement page is proposed. Organic light-emitting diodes are organic light-emitting diodes. Several steps of arranging the organic light emitting diode panels. Provide - substrate. A plurality of strips are formed; === includes the following electrode systems corresponding to the pixel structures of the respective rows. Above each of the first electrodes of the plate t, each of the second electrodes corresponds to one of the columns 'the second electrode and is adjacent to the first electrode phase region-electrode and the second electrode to form a light-emitting layer on the first electricity_ Pick up. The second layer of the present invention is made to make the above-mentioned contents of the present invention more obvious and easy to understand. The following is a more specific example, and the accompanying iU is described in detail as follows: [Embodiment] Please Also refer to Figures 1 to 3. FIG. 2 is a schematic diagram of the substrate 18 〇, the first electrode U0 and the second electrode 120 of the OLED panel 1 according to the preferred embodiment of the present invention. FIG. 2 is a cross-sectional view along the second drawing. A cross-sectional view of one of the lines 2-2' of the organic light-emitting diode structure ρι〇〇. As shown in Fig. 1, the organic light-emitting diode panel 100 has a plurality of organic light-emitting diode elementary structures P100 arranged in a matrix. The organic light emitting diode panel includes at least one substrate 180, a plurality of first electrodes 11A, a plurality of second electrodes 120, and a light emitting layer 130 (the light emitting layer 130 is shown in FIG. 2). The first electrode 110 is disposed on the substrate 丨80. Each of the first electrodes 110 corresponds to a cell structure P100 of each row. The second electrode 120 is overlaid on the first electrode 110. Each of the second electrodes 120 corresponds to a partial region of the column of the modified replacement page P100 of August 25, 100. p should be stacked in the substrate 180 and the first electrode 110 and the second electrode 120 are stacked on the substrate 180 and are electrically connected to the first electrode 110. Separated. The illuminating layer 130; the first electrode U 〇 and the second electrode 120, the luminescent layer 130 ^ electrode m and the second electrode 12G are electrically connected. In this embodiment, the first electrode 110 is an anode, the second electrode 120 is a cathode, and the first pole 110 is bridged by the second layer (10) through the light-emitting layer i30. (D) In the first figure, the first electric S110 and the first The second electric S120 is linear and the first electrode 110 and the second electrode 120 are staggered. As is apparent from the cross-sectional view of Fig. 2, the first electrode 110 and the second electrode 120 partially overlap. ^ 卜 ’ 'Organic light-emitting diode panel 1 〇〇 and its halogen structure _ = a barrier layer 160. The insulating layer 16 is disposed between the first electrode 11A and the first electrode 120 to separate the first electrode 11{) and the second electrode (2) from each other. As shown in Fig. 2, the insulating layer 16A includes a first insulating layer i6i and a first insulating layer 162'. The i-th edge layer 161 is disposed on the first electrode 110. The first insulating layer 162 and the second electrode 12 are stacked on the first insulating layer 161_h. The first insulating layer 161 separates the overlapping regions of the first electrode 11 (the second electrode (10), and the second insulating layer 162 separates the first electrode and the region above the first electrode 12G to avoid direct electrical properties. The first insulating layer 161 or the second insulating layer 162 may include a photo spacer material. As shown in FIG. 1, each of the individual pixel structures P100 includes a - region - 1356653 !00 S 2 2S Fix replacement page
PlOOa及一第二區域PlOOb。各個晝素結構ριοο僅對應於 各條第一電極110之區域係定義為第一區域Pi〇〇a。在同 一列之晝素結構中’第一區域Pl〇〇a皆位於各個晝素結構 P100之同一側。各個晝素結構P100對應於各條第一電極 110及各條第二電極120之重疊區域係定義為第二區域 P100b。在同一列之畫素結構P100中，第二區域pi〇〇b皆 位於各個晝素結構P100之同一侧。相鄰兩列晝素結構P1 〇〇 的第一區域PI 00a係異側配置，相鄰兩列晝素結構pi〇〇 的第二區域P100b亦異側配置。詳細的說，相鄰二列畫素 結構，上方晝素結構列的第一區域Pl〇〇a配置於該晝素結 構下側’下方晝素結構列的第一區域Pl〇〇a配置於該畫素 結構上側；而上方晝素結構列的第二區域Pl〇〇b配置於該 晝素結構上側’下方畫素結構列的第二區域Pl〇〇b配置於 該畫素結構下側。也就是說，從第1圖所示，任相鄰兩列 之晝素結構P100的第一區域Pl〇〇a及第二區域PI 〇〇b係 上下顛倒異側配置。 另外，如第2圖所示’有機發光二極體面板1〇〇及其 畫素結構P100更包括數個電洞源140及數個電子源150。 電洞源140係分別設置於陽極（在本實施例中，陽極係為 第一電極110 )及發光層130之間。在本實施例中，電洞 源 140 包括一電洞注入層（hole injection layer，HIL) 142 及一電洞傳輸層（hole transport layer ’ HTL) 141。 電洞注入層142係設置於陽極（在本實施例中，陽極係為 第一電極110)上。電洞傳輸層141係設置於發光層130 1356653 100年8月25日修正替換頁 及電洞注入層142之間。或者是’電洞源140可以只是一 電洞傳輸層141，而沒有電洞注入層142。 電子源150係分別設置於陰極（在本實施例中，陰極 係為第二電極120)及發光層130之間。在本實施例中， 電子源150包括一電子注入層（electron injection layer，EIL) 152 及一電子傳輸層（electron transport layer ’ ETL) 151。電子注入層152係設置於陰極（在本 實施例中’陰極係為第二電極120)上。電子傳輸層ι51 係設置於發光層13〇及電子注入層152之間。或者是，電 子源150可以只是一電子傳輸層151，而沒有電子注入層 152。其中’電洞源I40及電子源150之間係以第一絕緣 層161及第二絕緣層162相互隔開。 再者’有機發光"一極體面板100及其晝素結構P10Q 更包括一保護層170。保護層170係覆蓋發光層13〇、第 一電極11 〇、第二電極120、電子源140及電洞源15〇。 當第一電極110及第二電極12〇被施加一電壓時，電 子將由第二電極120發出，經電子源150往發光層13〇移 動。電洞將由第一電極11〇發出，經電洞源14〇往發光層 130移動。當電子及電洞在發光層丨3〇中結合時，發光層 130的發光材料會受激而發光。 至於本實施例之有機發光二極體面板1〇〇及其晝素 結構P100之製造方法，在此以流程圖並同時搭配面板及 晝素結構之示意圖說明如下，但本實施例之技術並不侷限 在此。 11 1356653 ion年8月？.5日修正替換頁 請同時參照第3A〜3B圖及第4A〜4M圖。第3A〜3B 圖繪不依照本發明較佳實施例之有機發光二極體面板1 〇〇 及其晝素結構P100之製造方法流程圖，第4A〜4M圖繪示 依照第3A〜3B圖各步驟之面板1〇〇的示意圖。如第4八圖 所不’進入第3A圖之步驟3〇1。提供一基板18〇 〇 接著’如第4B所示，進入第3A圖之步驟302。形成 數條第一電極110於基板18〇上。請參照第丨圖，各第一 電極110係對應於各行之畫素結構ρι〇〇。各條第一電極 110幾乎佔據整個晝素結構ρι〇〇，並且每兩條相鄰之第一 電極以〇的間隙可以相當地小。雖然第一電極11〇之間的 間隙很小，此一步驟係可透過黃光微影製程形成，各條第 電極110之間仍然保持電性隔離。 然後，如第4C圖所示，進入第3A圖之步驟3〇3。形 成一第一絕緣们61於第一電極11〇±。第一絕緣層⑻ 係可包含光阻間隔材料。 者，如第4D圖，進入第3A圖之步驟3〇4。形成』 二電極120於第一電極11〇之上。請參照第！圖，: =二電極12〇觸應於各狀畫素結構p⑽的部分區 =。在本實施例中，各條第二電極⑽ ，=一半區域。如第_所示，第二二 係可係透過第—絕緣層161相互關。此, 係可透過貫光微影製程形成 然後，如第4Ε圖所示，進入筮岡 吐 %八弟圖之步驟305。飛 成一第二絕緣層162於Μ -番拉^ ibz於弟—電極12〇及第一絕緣層 12 1356653 上，第二絕緣層162係可包含光阻間隔材料。 接著，如第4F圖所示，進入第3A圖之步驟3〇6。形 成第一填充口 163及第二填充口 164,第一填充口 163暴 露第一電極110,第二填充口 164暴露第二電極12〇。 ，後，如第4G圖所示，進入第3A圖之步驟3〇卜提 供第遮罩410，第一遮罩410具有數個第一遮罩開口 411^。請參照第5A圖，其繪示第牝圖之第一遮罩41〇之 不思圖。各個第一遮罩開口 411係對應於相鄰兩列畫素結 fPlOO之第-區域簡a’以暴露出陽極（在本實施例中， 陽極係為第一電極110)。在本發明的有機發光二極體面板 〇中相部兩列畫素結構P1⑽之多個第—區域術因 異側配置而集合成一個較大之第一區塊A1，第一遮罩開口 411即對應於此第一區塊A1。 …接著’如第4H圖所示，進入第3B圖之步驟篇。蒸 源140於各第一遮罩開口 411。透過步驟307及步 Z 308，即可使電洞源14〇分別形成於陽才亟（在本實施例 陽極：為第一電極11〇)上。一般而言，蒸鍍製程係 =下在上蒸餘材至基板刚上，為方便說明，第4g〜4j 圖係以第-遮罩41〇位於基板⑽上方之圖例做說明。 供第1圖所示，進入第犯圖之步驟。提 逆 '、。δ月參照第5B圖’其繪示第41圖之第一 =罩410之示意圖。第一遮罩41〇之各第一遮罩開口 4ΐι 係對應於相鄰兩列書素έ士構p〗 露出…，…第二區域P100b，以暴 出陰極（在本η例中，陰極係為第二電極12〜在有 13 1356653 100年8月25日修正替換頁 機發光二極體面板1〇〇中，相鄰兩列畫素結構ρι〇〇之多 個第二區域Pl〇0b因異側配置而集合成一個較大之第二區 塊A2，第一遮罩開口 411即對應於此第二區塊A2。由於 各個第一區域P11 〇a及各個第二區域pi〇〇b之面積實質上 相等，故上述之第一區塊及第二區塊Μ之面積實質上 相等。在此步驟中，使用者不需要提供另一個遮罩，僅需 平移第一遮罩410即可以第一遮罩開口 411對應此些第二 區域PlOOb。 接著，如第4J圖所示，進入第3B圖之步驟31〇。蒸 鍍電子源150於各個第一遮罩開口 411。透過步驟3〇9及 ^驟310即可使電子源15〇分別形成於陰極（在本實施例 中，陰極係為第二電極12〇)上。 其中，由於任相鄰兩列之晝素結構ρι〇〇的第一區域 PlOOa及第二_P1嶋係異侧配置^此，相較於 m晝素結構’第一遮罩410係可開設較大之第-遮 ㈣程難度降低，且蒸_整度及精 供-==所:罩=圖之步_。提 ,01 弟一遮罩420具有數個第二遮罩開口 請參照第6Α圖，其繪示第4Κ圖之第二遮罩傷之 421係對應於各行晝素結構_ 之第£域PllOa及弟二區域P1〇〇b，第 係間隔二行畫素結構P100。 、歼 21 接著，如第4L圖所示，進入第兆圖之步驟批。蒸 t t ' 100年8月25曰修正替換頁 光層130於第二遮罩開口 421。一般而言，蒸鍍製程 二礼二住上蒸發乾材至基板180上，為方便說明，第4K 圖係以第二遮罩420位於基板180上方之圖例做說 明。 _ 其中’蒸鍍發光層130之步驟312中，係輪流蒸鍍第 原色發光線、第二原色發光線及第三原色發光線。在第 θ中’首先蒸鍍數條第一原色發光線於第二遮罩開口 421 ’以使第一原色發光線形成於其中之一行晝素結構 Ρ100。 接著’請參照第6Β圖，其繪示第6Α圖之第二遮罩 420平移—行晝素結構Ρ1 〇〇之示意圖。將第二遮罩420平 移—行畫素結構’並蒸鍍數條第二原色發光線於第二遮罩 開口 421 ’以使第二原色發光線形成於下一行畫素結構 Ρ100 〇 接著’請參照第6C圖，其繪示第6Β圖之第二遮罩 420平移—行晝素結構Ρ1 〇〇之示意圖。將第二遮罩420平 移仃晝素結構，並蒸鍍數條第三原色發光線於第二遮罩 開口 421，以使第三原色發光線形成於下一行晝素結構 P1 〇〇。透過上述之步驟即可使各第一原色發光線、各第二 發光線及各第三原色發光線輪流對應於各行之晝素結構 P100。 一 ★ 一在本實施例中，第一原色發光線、第二原色發光線及 第一原色發光線分別為紅色發光線、綠色發光線及藍色發 光線’使得各個晝素結構p1〇〇驅動後可分別呈現紅色光、 15 1356653 inn r 日？s 口為贫7^@$胃 —— I — / f—· >«^〇-» ». I_I ·< / 綠色光及藍色光。鄰近之三個畫素結構P1 〇〇係對應於三 種不同之發光原色’三種不同發光顏色之晝素結構P1〇〇 係可組成一個顯示單元（Display [Jnit)。在各個顯示單 元中’三種發光原色係可合成出各種不同之色彩。 然後’如第4M圖所示’進入第3B圖之步驟313。形 成一保5蒦層170覆蓋於發光層130、第一電極11〇及第二 電極120，以避免外界濕氣或微粒子侵入。至此，本實施 例之有機發光二極體面板1〇〇其畫素結構ρι〇〇便告完成。 此外，睛參照第7圖，其繪示依照本實施例之有機發 光一極體面板1〇〇之電路圖。各個有機發光二極體畫素結 構ριοο相當於一個發光二極體（Di〇de),本實施例之陽 極（第一電極110)相當於發光二極體之陽極，本實施例 之陰極（第二電極12G)相#於發光二極體之陰極。當陽 極與陰極的電壓差超過—臨界電壓時，則有機發光二極體 晝素結構P100受到驅動而發光。 如第7圖所示，各個有機發光二極體晝素結構屬 係以矩陣式制，而形成—被動式有機發光二極體面板 刚。當欲使第二行第三列之晝素結構p⑽發光時，則僅 f在第二行之第一電極110及第三列之第二電極12〇之間 2大於臨界電壓之電壓差，即可驅動該畫素結構剛 二久:二各行之第一電極110及各列之第二_ 12° 僅*各自福接至-控制電流，即可任意驅動其中之一晝素 結構P10 0發亮。 一、 此外’若進一步控制第一 電極丨10及第二電極120之 1356653 * » 100年8月25曰修正替換頁 • 電壓差的大小，亦可控制晝素結構P100的發光量大小。 因此，每一畫素結構P100之發光量大小亦可有效的控制。 其中，在本實施例中，對應於三種不同發光原色之畫素結 構P100係組成一個顯示單元。若進而控制該三個晝素結 構P100之發光量，即可合成各種不同色彩。 然本實施例所屬之技術領域中具有通常知識者亦可 瞭解本實施例之技術並不侷限於此。例如，第一電極110 及第二電極120之材料可包含氧化銦錫（indium tin oxide，ITO)、鎮（Mg)或銀（Ag)。當然，第一電極 110 * 及第二電極120之材料可視有機發光二極體面板100及其 晝素結構P100 I之發光路徑而彈性選用。若第一電極110 及第二電極120為反射性電極時，則有機發光二極體面板 100及其晝素結構P100可以是向上發光（top emission) 結構。若第一電極110及第二電極120為透明或半透明電 極，且發光層130上方再設置一反射性材料時，則有機發 光二極體面板100及其晝素結構P100可以是向下發光 (bottom emission)結構。若第一電極110及第二電極120 為透明或半透明電極，且發光層130上方不設置反射性材 料時，則有機發光二極體面板100及其晝素結構P100可 以是雙向發光（dual emission)結構。 此外，基板180係可選用玻璃基板、塑膠基板或陶瓷 基板。使用者係可以依據產品特性及製程條件選用適當的 材質。依導電性質而言，基板180若採用絕緣基板，則可 避免不當的寄生電容產生。依硬度而言，基板180若採用 17 !QQ年S月25曰你正兹拥百 瞽則使用者可捲曲有機發光二極體面板;二 而收納於—筆桿或ϋ置内，相當地實用。 係分二貫施例之第一電極110及第二電極120 110亦了 3 為例做說明。然位於下方之第-電極 110亦可以是陰極，杨 極，口要θ、㈣晤1 方之第二電極120亦可以是陽 150叙陰極分別透過電洞源140及電子源 輕接I光層130均不脫離本發明之技術範圍。 1當nr上述貫施例所揭露之有機發光二極體面板及 與製造方法’係將第一電極設置於基板上，並 ^與第—電極分隔式設置於第—電極上，且發光 二r置於帛$極及第二電極上方。使得本實施例之有機 X、二極體©板及其畫素結構與製造方法至少具有下列 優點· 第一、「畫素結構開口率大」：發光層係設置於第一電 極、第一電極、基板及其他元件之上，故發光層係可直接 由上方射出光線’而不受到任何元件的阻擋，使得有機發 光二極體之晝素結構開口率大增。 一第二、「第一電極及第二電極製作容易」：在有機發光 二極體面板及其晝素結構之製造過程中，第一電極及第二 電極係形成於發光層之前。故在第—電極及第二電極之製 造過程中，不需要考慮製程條件是否會破壞發光層。傳統 上，諸如兩溫、離子撞擊或化學反應等等因素，均有可能 破壞發光層。在本實施例中，第一電極及第二電極不再需 要選擇特珠之製造方法及特殊之材質以避免破壞發光 1356653 * . 100年8月25日修正替換頁 ‘ 層，使得第一電極及第二電極之製作過程更加的容易。 第三、「發光路徑多樣化」：如上所述，第一電極及第 二電極係可採用透明電極、半透明電極或反射性電極。使 得有機發光二極體面板及其畫素結構可具有向上方光、向 下發光或雙向發光之各種實施態樣。 第四、「矩陣式控制晝素結構」：第一電極及第二電極 係交錯配置，而形成複數個矩陣排列之畫素結構。當某一 行之第一電極及某一列之第二電極被施加一電壓，且該行 之第一電極及該列之第二電極的電壓差超越臨界電壓 ' 時，即可驅動該行該列之畫素結構發光。矩陣式晝素結構 在應用上具有控制簡易之優點。 案五、「可控制發光量大小」：有機發光二極體面板更 可控制e某一行之第一電極及某一列之第二電極的電壓大 小，以調控各個晝素結構之發光量。 第六、「色彩多樣化」：此外，本實施例之發光層更包 括三種不同原色發光線，以呈現三種不同發光顏色之畫素 結構。鄰近之三種不同發光顏色之晝素結構係可組成顯示 單元，並調控各個畫素結構之發光量以合成各種不同色 彩。 第七、「提高製程良率」：在蒸鍍電洞源及電子源之步 驟中，由於任相鄰兩列之晝素結構的第一區域及第二區域 係上下顛倒配置。因此，相較於未上下顛倒之畫素結構， 第一遮罩係可開設較大之第一遮罩開口。使得蒸鍍製程難 度降低，且蒸鍍平整度及精確度等皆可有效提高。 第八、「減少遮罩成本」：在蒸鍍電洞源及電子源之步 19 1356653 inn # R 日 --- I — / w--·~· I*y · · i—I 、PlOOa and a second area P100b. Each of the individual element structures ριοο is defined as a region of each of the first electrodes 110 as a first region Pi〇〇a. In the same column of the halogen structure, the first region P1〇〇a is located on the same side of each of the pixel structures P100. The overlapping region of each of the individual element structures P100 corresponding to each of the first electrodes 110 and the respective second electrodes 120 is defined as a second region P100b. In the pixel structure P100 of the same column, the second region pi〇〇b is located on the same side of each of the pixel structures P100. The first region PI 00a of the adjacent two columns of the halogen structure P1 〇〇 is disposed on the opposite side, and the second region P100b adjacent to the two columns of the halogen structure pi is also disposed on the opposite side. In detail, in the adjacent two columns of pixel structures, the first region P1〇〇a of the upper halogen structure column is disposed on the lower side of the halogen structure, and the first region P1〇〇a of the lower pixel structure column is disposed in the The upper side of the pixel structure is disposed on the upper side of the pixel structure. The second area P1〇〇b of the upper pixel structure column is disposed on the lower side of the pixel structure. That is, as shown in Fig. 1, the first region P10a and the second region PI?b of the adjacent two columns of the pixel structure P100 are arranged upside down. Further, as shown in Fig. 2, the organic light-emitting diode panel 1 and its pixel structure P100 further include a plurality of hole sources 140 and a plurality of electron sources 150. The hole source 140 is disposed between the anode (in the present embodiment, the anode is the first electrode 110) and the light-emitting layer 130, respectively. In the present embodiment, the hole source 140 includes a hole injection layer (HIL) 142 and a hole transport layer (HTL) 141. The hole injection layer 142 is provided on the anode (in the present embodiment, the anode is the first electrode 110). The hole transport layer 141 is disposed between the light-emitting layer 130 1356653 and the correction replacement page and the hole injection layer 142 of August 25, 100. Alternatively, the 'hole source 140' may be just a hole transport layer 141 without the hole injection layer 142. The electron source 150 is disposed between the cathode (in the present embodiment, the cathode is the second electrode 120) and the light-emitting layer 130, respectively. In the present embodiment, the electron source 150 includes an electron injection layer (EIL) 152 and an electron transport layer (ETL) 151. The electron injection layer 152 is provided on the cathode (in the present embodiment, the cathode is the second electrode 120). The electron transport layer ι51 is disposed between the light-emitting layer 13A and the electron injection layer 152. Alternatively, the electron source 150 may be just an electron transport layer 151 without the electron injection layer 152. Wherein the hole source I40 and the electron source 150 are separated from each other by the first insulating layer 161 and the second insulating layer 162. Further, the 'organic luminescence" one-pole panel 100 and its halogen structure P10Q further include a protective layer 170. The protective layer 170 covers the light-emitting layer 13A, the first electrode 11A, the second electrode 120, the electron source 140, and the hole source 15A. When a voltage is applied to the first electrode 110 and the second electrode 12, electrons are emitted from the second electrode 120 and moved through the electron source 150 toward the light-emitting layer 13A. The hole will be ejected by the first electrode 11 and moved through the hole source 14 to the luminescent layer 130. When electrons and holes are combined in the light-emitting layer 3, the light-emitting material of the light-emitting layer 130 is excited to emit light. As for the manufacturing method of the organic light-emitting diode panel 1 and the pixel structure P100 of the present embodiment, the following schematic diagrams of the panel and the pixel structure are described below, but the technique of the embodiment is not Limited here. 11 1356653 Ion August? .5 Revision Correction Page Please refer to Figures 3A to 3B and Figures 4A to 4M at the same time. 3A to 3B are diagrams showing a method of manufacturing an organic light-emitting diode panel 1 and its pixel structure P100 according to a preferred embodiment of the present invention, and FIGS. 4A to 4M are diagrams according to FIGS. 3A to 3B. A schematic diagram of the panel of the step. As shown in Figure 4, do not enter step 3〇1 of Figure 3A. A substrate 18 is provided. Next, as shown in Fig. 4B, step 302 of Fig. 3A is entered. A plurality of first electrodes 110 are formed on the substrate 18A. Referring to the second drawing, each of the first electrodes 110 corresponds to a pixel structure ρι〇〇 of each row. Each of the first electrodes 110 occupies almost the entire unitary structure ρι〇〇, and the gap between each of the two adjacent first electrodes can be considerably small. Although the gap between the first electrodes 11 很小 is small, this step can be formed by a yellow lithography process, and the respective first electrodes 110 remain electrically isolated. Then, as shown in Fig. 4C, the process proceeds to step 3〇3 of Fig. 3A. A first insulator 61 is formed on the first electrode 11〇±. The first insulating layer (8) may comprise a photoresist spacer material. If, as shown in Fig. 4D, go to step 3〇4 of Fig. 3A. The second electrode 120 is formed over the first electrode 11A. Please refer to the first! Fig., = = The second electrode 12〇 touches the partial region of the various pixel structure p(10). In this embodiment, each of the second electrodes (10) has a half area. As shown in the _th, the second secondary system may be closed to each other through the first insulating layer 161. Therefore, it can be formed through the lithography process. Then, as shown in Fig. 4, the process proceeds to step 305 of the 八 吐 % 八 八 八. A second insulating layer 162 is formed on the second insulating layer 162, and the second insulating layer 162 may include a photoresist spacer material. Next, as shown in Fig. 4F, the process proceeds to step 3〇6 of Fig. 3A. The first filling port 163 and the second filling port 164 are formed. The first filling port 163 exposes the first electrode 110, and the second filling port 164 exposes the second electrode 12?. Then, as shown in Fig. 4G, step 3 of Fig. 3A is provided to provide a first mask 410 having a plurality of first mask openings 411^. Please refer to FIG. 5A, which illustrates the first mask 41 of the first drawing. Each of the first mask openings 411 corresponds to the first-region simple a' of the adjacent two columns of pixel nodes fP100 to expose the anode (in the present embodiment, the anode is the first electrode 110). In the organic light-emitting diode panel of the present invention, the plurality of first-region regions of the two-column pixel structure P1 (10) are assembled into a larger first block A1, and the first mask opening 411 is formed by an opposite side arrangement. That is, it corresponds to the first block A1. ...then as shown in Fig. 4H, proceed to the step of Figure 3B. The evaporation source 140 is in each of the first mask openings 411. Through the steps 307 and Z 308, the hole source 14 is formed on the anode (in the embodiment: the first electrode 11). In general, the evaporation process system = lowering the remaining material onto the substrate, for convenience of explanation, the 4g to 4j drawings are illustrated by the legend in which the first mask 41 is located above the substrate (10). For the first step, enter the first step of the map. Reversing ',. The δ month is referred to in Fig. 5B', which shows a schematic view of the first = cover 410 of Fig. 41. Each of the first mask openings 4 ΐ ι of the first mask 41 对应 corresponds to the adjacent two columns of έ έ 构 露出 露出 , , 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二 第二For the second electrode 12~, there is a plurality of second regions P1〇0b of the adjacent two columns of pixel structures ρι〇〇 in the replacement pager LED panel 1A of 13 1356653 August 25, 100 The first mask opening 411 corresponds to the second block A2, and the first mask area 211a and each of the second areas pi〇〇b The areas of the first block and the second block are substantially equal. In this step, the user does not need to provide another mask, and only the first mask 410 needs to be translated. A mask opening 411 corresponds to the second regions P100b. Next, as shown in Fig. 4J, the process proceeds to step 31A of Fig. 3B. The electron source 150 is evaporated to the respective first mask openings 411. Through the steps 3〇9 And step 310, the electron source 15〇 can be respectively formed on the cathode (in the embodiment, the cathode system is the second electricity) 12〇). Among them, the first region P100a and the second_P1 system of the adjacent two columns of the pixel structure ρι〇〇 are arranged differently, compared with the m-mu structure of the first mask 410 It is possible to open a larger first-cover (fourth) course with less difficulty, and the steaming_uniformity and fine supply-== are: cover=step of the figure _. mention, 01 brother a mask 420 has several second mask openings, please Referring to Figure 6, it is shown that the second mask injury of the fourth figure corresponds to the fourth domain PllOa and the second region P1〇〇b of the respective cell structure _, the second interval pixel structure P100 Then, as shown in Fig. 4L, enter the step of the first megagraph. Steam tt 'August 25, 100 rev. replaces the page layer 130 in the second mask opening 421. In general, evaporation The second step of the process is to evaporate the dry material onto the substrate 180. For convenience of explanation, the 4K figure is illustrated by the legend in which the second mask 420 is located above the substrate 180. _ In the step 312 of the vapor-deposited layer 130, The first primary color light-emitting line, the second primary color light-emitting line, and the third primary color light-emitting line are alternately vapor-deposited. In the θth, first, a plurality of first primary color light-emitting lines are first vapor-deposited. The second mask opening 421 ′ is such that the first primary color light-emitting line is formed in one of the rows of the halogen structure Ρ 100. Next, please refer to FIG. 6 , which illustrates the second mask 420 of the sixth drawing. Schematic diagram of the second mask 420 is translated into a line pixel structure 'and a plurality of second primary color light lines are vapor-deposited on the second mask opening 421 ' so that the second primary color light line is formed in the next line of pixel structure Ρ100 〇 Next, please refer to FIG. 6C, which shows a schematic diagram of the second mask 420 translation-line element structure Ρ1 第 of FIG. The second mask 420 is moved by the halogen structure, and a plurality of third primary color light-emitting lines are vapor-deposited to the second mask opening 421 so that the third primary color light-emitting line is formed on the next row of the pixel structure P1 〇〇. Through the above steps, each of the first primary color light-emitting lines, each of the second light-emitting lines, and each of the third primary color light-emitting lines can be alternately flowed to the pixel structure P100 of each row. In the present embodiment, the first primary color illuminating line, the second primary color illuminating line, and the first primary color illuminating line are respectively a red illuminating line, a green illuminating line, and a blue illuminating line ′ such that each elementary structure p1 〇〇 is driven Can it be red light, 15 1356653 inn r? s mouth is poor 7^@$ stomach - I - / f - · > «^〇-» ». I_I · < / green light and blue light. The adjacent three pixel structure P1 对应 corresponds to three different illuminating primary colors. The three different illuminating color morphological structures P1 可 can form a display unit (Display [Jnit). The three illuminating primary colors in each display unit can be combined into a variety of different colors. Then, as shown in Fig. 4M, the process proceeds to step 313 of Fig. 3B. A protective layer 170 170 is formed over the luminescent layer 130, the first electrode 11 〇 and the second electrode 120 to prevent intrusion of external moisture or particles. So far, the organic light-emitting diode panel 1 of the present embodiment has completed its pixel structure ρι〇〇. Further, referring to Fig. 7, there is shown a circuit diagram of an organic light-emitting diode panel 1 according to the present embodiment. Each of the organic light emitting diode pixel structures ριοο corresponds to one light emitting diode (Di〇de), and the anode (first electrode 110) of the present embodiment corresponds to the anode of the light emitting diode, and the cathode of the embodiment (the first embodiment) The two electrodes 12G) phase # are at the cathode of the light-emitting diode. When the voltage difference between the anode and the cathode exceeds the -threshold voltage, the organic light-emitting diode elemental structure P100 is driven to emit light. As shown in Fig. 7, each of the organic light-emitting diode elemental structures is formed in a matrix form to form a passive organic light-emitting diode panel. When the pixel structure p(10) of the second row and the third column is to be illuminated, only f is greater than the voltage difference between the first electrode 110 of the second row and the second electrode 12 of the third column by a threshold voltage, that is, The pixel structure can be driven for just two years: the first electrode 110 of each row and the second _ 12° of each column are only connected to the control current, and one of the pixel structures P10 0 can be arbitrarily driven. . 1. Further, if the first electrode 丨10 and the second electrode 120 are further controlled, 1356653* » August 25, pp. Correction replacement page • The magnitude of the voltage difference can also control the amount of luminescence of the pixel structure P100. Therefore, the amount of luminescence of each pixel structure P100 can also be effectively controlled. Here, in the present embodiment, the pixel structure P100 corresponding to three different illuminating primary colors constitutes one display unit. If the amount of luminescence of the three elemental structures P100 is further controlled, various colors can be synthesized. However, those skilled in the art to which the present embodiment pertains can also understand that the technology of the embodiment is not limited thereto. For example, the material of the first electrode 110 and the second electrode 120 may include indium tin oxide (ITO), town (Mg) or silver (Ag). Of course, the material of the first electrode 110* and the second electrode 120 can be flexibly selected according to the light-emitting path of the organic light-emitting diode panel 100 and its halogen structure P100I. When the first electrode 110 and the second electrode 120 are reflective electrodes, the organic light emitting diode panel 100 and its halogen structure P100 may be a top emission structure. If the first electrode 110 and the second electrode 120 are transparent or semi-transparent electrodes, and a reflective material is disposed over the light-emitting layer 130, the organic light-emitting diode panel 100 and the pixel structure P100 thereof may be downwardly illuminated ( Bottom emission) structure. If the first electrode 110 and the second electrode 120 are transparent or semi-transparent electrodes, and the reflective material is not disposed above the light-emitting layer 130, the organic light-emitting diode panel 100 and the halogen structure P100 thereof may be bidirectionally lit (dual emission) )structure. Further, the substrate 180 may be a glass substrate, a plastic substrate or a ceramic substrate. The user can select the appropriate material according to the product characteristics and process conditions. Depending on the conductivity, if an insulating substrate is used for the substrate 180, improper parasitic capacitance can be avoided. In terms of hardness, if the substrate 180 is used, the user can curl the organic light-emitting diode panel; the second is stored in the pen holder or the device, which is quite practical. The first electrode 110 and the second electrode 120 110 of the second embodiment are also illustrated as an example. However, the first electrode 110 located below may also be a cathode, the anode pole, the mouth θ, and the fourth electrode 120 of the (4) side may also be a cathode 150. The cathode is respectively transmitted through the hole source 140 and the electron source is connected to the I layer. 130 does not depart from the technical scope of the present invention. 1 When the organic light-emitting diode panel and the manufacturing method disclosed in the above embodiments are disposed on the substrate, and the first electrode is disposed on the first electrode, and the light is emitted. Placed above the 极$ pole and above the second electrode. The organic X, the diode plate, and the pixel structure and the manufacturing method thereof of the present embodiment have at least the following advantages. First, the "opening ratio of the pixel structure is large": the light emitting layer is disposed on the first electrode and the first electrode Above the substrate and other components, the light-emitting layer can directly emit light from above without being blocked by any element, so that the aperture ratio of the organic structure of the organic light-emitting diode is greatly increased. First, "the first electrode and the second electrode are easily fabricated": in the manufacturing process of the organic light-emitting diode panel and its halogen structure, the first electrode and the second electrode are formed before the light-emitting layer. Therefore, in the manufacturing process of the first electrode and the second electrode, it is not necessary to consider whether the process conditions may damage the light-emitting layer. Traditionally, factors such as two temperatures, ion strikes, or chemical reactions have the potential to damage the luminescent layer. In this embodiment, the first electrode and the second electrode no longer need to select the manufacturing method of the special bead and the special material to avoid damaging the light 1356653 *. The replacement page 'layer is modified on August 25, 100, so that the first electrode and The fabrication process of the second electrode is easier. Third, "light-emitting path diversification": As described above, the first electrode and the second electrode may be a transparent electrode, a translucent electrode or a reflective electrode. The organic light-emitting diode panel and its pixel structure can have various embodiments of upward, downward or two-way illumination. Fourth, "matrix-controlled monolithic structure": the first electrode and the second electrode are alternately arranged to form a plurality of matrix-arranged pixel structures. When a voltage is applied to the first electrode of a row and the second electrode of a column, and the voltage difference between the first electrode of the row and the second electrode of the column exceeds the threshold voltage, the column can be driven. The pixel structure glows. The matrix-type halogen structure has the advantage of simple control in application. Case 5: "Controllable luminescence amount": The organic light-emitting diode panel can control the voltage of the first electrode of a certain row and the second electrode of a certain column to regulate the luminescence amount of each halogen structure. Sixth, "color diversification": In addition, the luminescent layer of the present embodiment further includes three different primary color illuminating lines to present a pixel structure of three different illuminating colors. The elementary structure of three adjacent luminescent colors can form a display unit and control the amount of luminescence of each pixel structure to synthesize various colors. Seventh, "Improve the process yield": In the step of vaporizing the hole source and the electron source, the first region and the second region of the adjacent two columns of the halogen structure are arranged upside down. Thus, the first mask can have a larger first mask opening than a pixel structure that is not upside down. The vapor deposition process is difficult to reduce, and the vapor deposition flatness and accuracy can be effectively improved. Eighth, "reducing the cost of the mask": in the step of vaporizing the hole source and the electron source 19 1356653 inn # R 日 --- I — / w--·~· I*y · · i-I
I 驟中，第一遮罩係可共用。且在蒸鍍三種原色發光線之步 驟中，第二遮罩係可共用。因此，僅需兩個遮罩即可完成 上述數個蒸鍍程序，相當地節省遮罩成本。 雖然本發明上述實施例之有機發光二極體面板及其 晝素結構與製造方法之部分優點係整理如上，然本發明之 優點及功效並非僅限於此。 綜上所述，雖然本發明已以一較佳實施例揭露如上， 然其並非用以限定本發明。本發明所屬技術領域中具有通 常知識者，在不脫離本發明之精神和範圍内，當可作各種 之更動與潤飾。因此，本發明之保護範圍當視所附之申請 專利範圍所界定者為#。 &… 20 丄356653 100年8月25日修正替換頁 【圖式簡單說明】 第1圖繪示依照本發明較佳實施例之有機發光二極 體面板之基板、第一電極及第二電極之示意圖； 第2圖繪示沿第1圖之截面線2_2，之一有機發光二 極體晝素結構的剖面圖； 第3A〜3B圖繪示依照本發明較佳實施例之有機發光 二極體面板及其晝素結構之製造方法流程圖； 第4A〜4M圖繪示依照第从〜犯圖各步驟之面板 •意圖； 第5A圖繪示第4G圖之第一遮罩之示意圖； 第5B圖繪示第41圖之第一遮罩之示意圖； 第6A圖繪示第4K圖之第二遮罩之示意圖； 第6B圖繪示第6A圖之第二遮罩平移一行畫素結構之 示意圖； 第6C圖繪示第6B圖之第二遮罩平移一行晝素結構之 不意圖；以及 第7圖繪示依照本實施例之有機發光二極體面板之 電路圖。 【主要元件符號說明】 100 :有機發光二極體面板 110 :第一電極 120 :第二電極 130 :發光層 21 140 :電洞源 141 :電洞傳輸層 142 :電洞注入層 150 :電子源 151 :電子傳輸層 152 :電子注入層 160 :絕緣層 161 :第一絕緣層 162 :第二絕緣層 163 :第一填充口 164 :第二填充口 170 :保護層 180 •基板 410 :第一遮罩 411 :第一遮罩開口 420 :第二遮罩 421 :第二遮罩開口 A1 : 第一區塊 A2 : 第二區塊 1356653 100年8月25 ρ.修正替換頁 Ρ100 :有機發光二極體晝素結構 PlOOa :第一區域 PlOOb :第二區域 22In the first step, the first mask can be shared. And in the step of vapor-depositing the three primary color light-emitting lines, the second mask can be shared. Therefore, only a few masks are required to complete the above several evaporation processes, which saves mask costs considerably. Although the organic light-emitting diode panel of the above embodiment of the present invention and its advantages in the structure and manufacturing method of the halogen structure are as described above, the advantages and effects of the present invention are not limited thereto. In view of the above, the present invention has been disclosed in a preferred embodiment, and is not intended to limit the present invention. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention is defined as # in the scope of the appended claims. &... 20 丄356653 Revised replacement page on August 25, 100 [Simplified illustration of the drawings] FIG. 1 illustrates a substrate, a first electrode and a second electrode of an organic light emitting diode panel according to a preferred embodiment of the present invention. FIG. 2 is a cross-sectional view showing a structure of an organic light-emitting diode element along a section line 2_2 of FIG. 1; FIGS. 3A to 3B are diagrams showing an organic light-emitting diode according to a preferred embodiment of the present invention; Flow chart of the manufacturing method of the body panel and the structure of the element; 4A to 4M are diagrams showing the panel according to the steps of the second embodiment; FIG. 5A is a schematic view showing the first mask of the 4Gth image; 5B is a schematic view of the first mask of FIG. 41; FIG. 6A is a schematic view of the second mask of FIG. 4K; and FIG. 6B is a diagram showing the second mask of FIG. 6A for shifting a row of pixel structures. FIG. 6C is a schematic diagram showing the second mask shifting a row of the pixel structure in FIG. 6B; and FIG. 7 is a circuit diagram of the organic light emitting diode panel according to the embodiment. [Description of Main Element Symbols] 100: Organic Light Emitting Diode Panel 110: First Electrode 120: Second Electrode 130: Light Emitting Layer 21 140: Hole Source 141: Hole Transport Layer 142: Hole Injection Layer 150: Electron Source 151: electron transport layer 152: electron injection layer 160: insulating layer 161: first insulating layer 162: second insulating layer 163: first filling port 164: second filling port 170: protective layer 180 • substrate 410: first covering Cover 411: First mask opening 420: Second mask 421: Second mask opening A1: First block A2: Second block 1356653 August 25, 1995 ρ. Correction replacement page Ρ100: Organic light-emitting diode The body element structure P100a: the first area P100b: the second area 22