TWI351414B - - Google Patents

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Publication number
TWI351414B
TWI351414B TW096112933A TW96112933A TWI351414B TW I351414 B TWI351414 B TW I351414B TW 096112933 A TW096112933 A TW 096112933A TW 96112933 A TW96112933 A TW 96112933A TW I351414 B TWI351414 B TW I351414B
Authority
TW
Taiwan
Prior art keywords
resin composition
semiconductor wafer
bis
substrate
sup
Prior art date
Application number
TW096112933A
Other languages
Chinese (zh)
Other versions
TW200804463A (en
Inventor
Osamu Matsuzaka
Rieko Hayashi
Takenori Ookubo
Tomohiro Hirata
Katsuhiko Yasu
Original Assignee
Hitachi Chemical Co Ltd
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Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200804463A publication Critical patent/TW200804463A/en
Application granted granted Critical
Publication of TWI351414B publication Critical patent/TWI351414B/zh

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    • H—ELECTRICITY
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/12—Bonding of a preformed macromolecular material to the same or other solid material such as metal, glass, leather, e.g. using adhesives
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  • Compositions Of Macromolecular Compounds (AREA)
  • Sealing Material Composition (AREA)
  • Wire Bonding (AREA)

Abstract

A resin composition for encapsulating fillers which, in a continuous voltage application test under high-temperature high-humidity conditions, does not induce electrode corrosion in the wiring circuit board and which has satisfactory stability at ordinary temperature. The resin composition contains a polyamic acid and/or a polyimide. The polyamic acid preferably is one represented by the following general formula (1): (1) wherein Ar<SUP>1</SUP> represents a tetravalent organic group; Ar<SUP>2</SUP> represents a divalent organic group; and l is an integer of 1 or larger. The polyimide preferably is one represented by the following general formula (2): (2) wherein Ar<SUP>3</SUP> represents a tetravalent organic group; Ar<SUP>4</SUP> represents a divalent organic group; and m is an integer of 1 or larger.

Description

1351414 (1) 九、發明說明 / 【發明所屬之技術領域】 本發明係關於一種封閉塡充劑用樹脂組成物、使用其 _ 倒裝晶片之安裝法及倒裝晶片之安裝物。 【先前技術】 電子機器之小型化、輕量化或薄型化進展，伴隨此， φ 亦尋求半導體晶片及配線電路基板之小型化、輕量化或薄 型化進展。一般，半導體晶片係安裝於配線電路基板上。 使半導體晶片零件安裝於配線電路基板上之方法，係可使 用一種使用焊接或共晶金屬而接合半導體晶片之凸塊與配 線電路基板之電極以導通之倒裝晶片安裝法。又爲了配線 電路基板之小型化、輕量化或薄型化，配線電路基板之構 成材料從如玻璃環氧樹脂之硬質材料轉移至聚醯亞胺薄膜 等可撓材的材料》 φ 在前述倒裝晶片安裝法中，係問題在於半導體晶片與 配線電路基板之線膨脤係數之差對熱衝擊之連接信賴性， 爲了改善此，一般於半導體晶片與配線電路基板之間使用 封閉塡充劑。藉此封閉塡充劑，可緩和接合部分所產生的 應力，以提高連接信賴性。 以往之倒裝晶片安裝法中之密封塡充方法，係可使用 一種使半導體晶片與配線電路基板以高溫度接合後，於半 導體晶片與配線電路基板之間隙藉毛細管現象注入、塡充 低黏度之熱硬化性液狀樹脂組成物，進行熱硬化之方法。 -6- (2) (2)1351414 但，在此方法中，係爲了半導體晶片·配線電路基板單元 的進一步小型化，若使配線間隙，或半導體晶片與配線電 路基板之間隙進一步狹窄（微節距化），作業效率之降低 ，或墳充變成困難之問題。 因此，接合之前預先使熱硬化性液狀樹脂組成物塗佈 或滴下於半導體晶片或配線電路基板之特定的位置，或於 其後，藉由加熱壓接半導體晶片電極之配線電路基板，俾 封閉塡充間隙之方法已被硏究。可適宜使用於此方法之封 閉塡充劑，係尋求（i )於塗佈滴下後可保持適度厚度； (ii )加熱接合之時，具有適度的流動性而可無間隙地塡 充半導體晶片與配線電路基·板；（iii)無因接合時之加熱 所產生的分解或發泡；（iv)以適當的溫度及速度進行固 化；（v )固化時電氣絕緣性高，不具有在配線基板上的 電極之腐蝕因素。 如此之封閉塡充劑係適宜使用於環氧樹脂系熱硬化性 樹脂，爲免因塡充洩漏造成空隙，亦硏究樹脂以及各種之 接合方法。 (參照專利文獻1 ) (專利文獻1 )特許第3 750606號公報&quot; 【發明內容】 (發明之揭示） (發明欲解決之問題） 但，本來環氣系熱硬化性樹脂係吸水性高，源自於其 (3) 1351414 製造方法而含有許多離子性雜質，故在高溫 電壓施加試驗中感應配線電路基板之電極腐 路之問題。又從硬化速度或硬化溫度之限制 不具有可跟隨可撓性電路板之柔軟性的硬化 性配線板基材、防焊漆等周邊構件易賦予應 ，感應配線電路基板之電極腐蝕，有電路短 一步，因在常溫下之安定性差，必須可在低 可使用時間，亦即，製造後之壽命非常短之 又在可撓性配線板中之倒裝晶片安裝中，係 與配線基板之電極的接合，一般無以使用焊 所產生的接合，例如，可使用金與錫、或金 的接合，其溫係達到30(TC〜3 50°C，故有從 樹脂組成物產生揮發成分之問題。 本發明係有鑑於上述習知技術之問題點 供一種在預先配置封閉塡充劑之可撓性配線 安裝方法中，於高溫高濕下之連續電壓施加 應配線電路基板之電極腐蝕，而在常溫之安 閉塡充劑用樹脂組成物；使用其之倒裝晶片 晶片安裝物。 (用以解決問題之手段） 爲解決前述問題，本發明之封.閉塡充劑 ，係使用於半導體晶片與可撓性配線基板之 閉塡充劑之樹脂組成物，其特徵在於：前述 高濕下之連續 蝕，有電路短 ，只提案一種 物，而於可撓 力，如前述般 路之問題。進 溫下的保管， 問題仍存在。 於半導體晶片 錫之金屬共晶 與金之更高溫 封閉塡充劑用 ，課題在於提 板的倒裝晶片 試驗中，不感 定性良好的封 安裝法及倒裝 用樹脂組成物 間隙的接著封 樹脂組成物含 -8 - (4) 1351414 有聚醯胺酸及/或聚醯亞胺β 前述聚醯胺酸係宜以下述通式1351414 (1) EMBODIMENT OF THE INVENTION / TECHNICAL FIELD OF THE INVENTION The present invention relates to a resin composition for a closed entangler, a mounting method using the same, and a flip chip mounting. [Prior Art] The miniaturization, weight reduction, and thinning of electronic equipment have progressed, and φ has also been demanded for miniaturization, weight reduction, and thinning of semiconductor wafers and printed circuit boards. Generally, a semiconductor wafer is mounted on a printed circuit board. A method of mounting a semiconductor wafer component on a printed circuit board can be a flip chip mounting method in which a bump of a semiconductor wafer and an electrode of a wiring circuit substrate are bonded using a solder or a eutectic metal. Further, in order to reduce the size, weight, and thickness of the printed circuit board, the constituent material of the printed circuit board is transferred from a hard material such as a glass epoxy resin to a material such as a flexible material such as a polyimide film. In the mounting method, there is a problem in that the difference in the linear expansion coefficient between the semiconductor wafer and the printed circuit board is reliable in connection with thermal shock. To improve this, a closed enthalpy is generally used between the semiconductor wafer and the printed circuit board. By closing the squeegee, the stress generated by the joint portion can be alleviated to improve the connection reliability. In the conventional method of sealing and charging in the flip chip mounting method, a semiconductor wafer and a printed circuit board are bonded at a high temperature, and then a capillary phenomenon is injected and filled with a low viscosity in a gap between the semiconductor wafer and the printed circuit board. A method of thermally curing a thermosetting liquid resin composition. -6- (2) (2) 1351414 However, in this method, the wiring gap or the gap between the semiconductor wafer and the printed circuit board is further narrowed for further miniaturization of the semiconductor wafer and the printed circuit board unit (microsection Distance), the reduction of work efficiency, or the problem of grave filling becomes difficult. Therefore, the thermosetting liquid resin composition is applied or dropped to a specific position of the semiconductor wafer or the printed circuit board before bonding, or thereafter, by heating and crimping the printed circuit board of the semiconductor wafer electrode, the crucible is closed. The method of filling up the gap has been studied. The closed chelating agent which can be suitably used in this method is intended to (i) maintain a moderate thickness after coating and dropping; (ii) have a moderate fluidity at the time of heat bonding and can fill the semiconductor wafer without gaps. Wiring circuit base plate; (iii) no decomposition or foaming due to heating during bonding; (iv) curing at an appropriate temperature and speed; (v) high electrical insulation during curing, not having a wiring substrate Corrosion factors on the electrodes. Such a closed sizing agent is suitably used for an epoxy resin-based thermosetting resin, and it is also required to prevent voids due to sputum leakage, and to investigate resins and various bonding methods. (Patent Document 1) (Patent Document 1) Japanese Patent No. 3,750,606, the disclosure of the present invention, and the disclosure of the present invention. Since it is derived from the (3) 1351414 manufacturing method and contains many ionic impurities, it causes a problem of electrode ruin of the wiring circuit board in the high-temperature voltage application test. Further, from the limitation of the curing speed or the curing temperature, it is not easy to provide a peripheral member such as a curable wiring board substrate or a solder resist which can follow the flexibility of the flexible circuit board, and the electrode of the induction wiring circuit board is corroded, and the circuit is short. One step, because of poor stability at normal temperature, it must be able to be used in a flip-chip mounting in a flexible wiring board at a low usable time, that is, a very short life after manufacture, and an electrode of the wiring substrate. In the joining, generally, the joining by welding is not used. For example, bonding of gold to tin or gold can be used, and the temperature is 30 (TC 3 to 50 ° C), so that there is a problem that a volatile component is generated from the resin composition. The present invention is directed to the problem of the above-mentioned prior art, and provides a method for mounting a flexible wiring in a pre-configured closed tamping agent, and applying a continuous voltage under high temperature and high humidity to electrode corrosion of the wiring circuit substrate at a normal temperature. Resin composition for sealing and filling; flip chip wafer mounting using the same. (Means for solving the problem) In order to solve the aforementioned problems, the sealing agent of the present invention, A resin composition for a closed charge of a semiconductor wafer and a flexible wiring board, characterized in that the continuous etching under high humidity has a short circuit, and only one object is proposed, and the flexible force is as described above. The problem of the road. The problem is still in the storage under temperature. The metal eutectic of tin in semiconductor wafers and the higher temperature sealing agent for gold are used in the flip chip test of the board, and the sealing is not good. The sealing resin composition of the gap between the resin composition for flipping and the resin composition contains -8 - (4) 1351414, and the polyaminic acid β and the polyaminic acid β are preferably the following formula.

ΗΝ-COOHΗΝ-COOH

【化1】 I 〇 〇【化1】 I 〇 〇

II II (1) (式（1)中’Ar表示4價之有機基，Ar2_ 2價之 有機基’ 1爲1以上之整數）所示。 聚1 述b2 前ΗII II (1) (In the formula (1), 'Ar represents a tetravalent organic group, and the Ar2_2-valent organic group '1 is an integer of 1 or more). Poly 1 description b2 front

⑵ (式（2 )中’ Ar表示4價之有機基，Ar4爲2價之 有機基，m爲1以上之整數）所示。 本發明之倒裝晶片安裝法，其特徵在於：於半導體晶 片與可撓性配線基板之至少一者，預先層形成前述之任一 者的封閉塡充劑用樹脂組成物後，加熱接合前述半導體晶 片與可撓性配線基板。 前述樹脂組成物之層形成係樹脂組成物含有前述聚醒 胺酸時係塗佈於半導體晶片與可撓性配線基板之任一者或 兩者後，可藉由進行硬化來實現。又樹脂組成物含有前述 聚醯亞胺時係使樹脂組成物薄膜化，可藉由使所得到之薄 膜附著於半導體晶片與可撓性配線基板之任一者或兩者來 實現。 -9- (5) (5)1351414 前述加熱接合爲前述半導體晶片之金凸塊（bump )與 前述配線電路基板之配線的鍍錫之金屬共晶，或前述半導 體晶片之金凸塊與前述配線電路基板之配線的鍍金之接合 時亦可良好地實施本發明方法。 本發明之倒裝晶片安裝物，其特徵在於.·藉由使本發 明之封閉塡充劑用樹脂組成物熱硬化或加熱熔融後再固化 而構成之接合層而塡充半導體晶片與可撓性配線基板之間 隙。 若依本發明，在預先配置封閉塡充劑之可撓性配線板 的倒裝晶片安裝方法中，藉由使用特定之熱塑性樹脂組成 物、亦即本發明之封閉塡充劑用樹脂組成物，塗佈後可保 特適度的厚度，加熱接合時具有適度的流動性而可無間隙 地塡充半導體晶片與可撓性配線板基材的間隙，無因接合 時之加熱所造成的分解或發泡，以適當的速度進行溶解、 固化，固化後之電氣絕緣性高，不具有在配線基板上之電 極的腐蝕因素，而可提供在常溫下之保管安定性優之封閉 塡充劑。 (用以實施發明之最佳形態） 以下，詳細說明有關本發明之適當的實施形態。 本發明之封閉塡充劑用樹脂組成物係其特徵在於：含 有聚醯胺酸及/或聚醯亞胺，但於半導體晶片或可撓性配 線板基材形成溶液狀而進行塗佈時，從樹脂於有機溶劑之 溶解性的觀點，宜使用聚醯胺酸。 -10- (6) (6)1351414 於本發明之樹脂組成物中含有之聚醒胺酸係宜以上述 通式（1)所示之聚醯胺酸。 前述聚醯胺酸係可使（A)四羧二酐成分與（B)二胺 成分反應而得到。 前述（A)四羧二酐成分可舉例如均苯四甲酸二g干、 1，2,3,4·苯四羧酸酐、1，2,3,4-環丁烷四羧酸酐、1,2,4,5·環 戊烷四羧酸酐、1,2,4,5-環己烷四羧酸酐、2,3,5·三羧基環 戊基醋酸二酐' 3,3’，4,4’-雙環己基四羧酸酐、3,3，，4,4，_ 聯苯基四羧酸酐、2,3,3’，4’-聯苯基四羧酸二酐、 3,3’，4,4’-聯苯基四羧酸二酐、3,3’，4,4’-二苯甲酮四羧酸 酐、3,3’，4,4’-二苯甲酮四羧酸二酐、3,3，，4,4，-聯苯基醚 四羧酸酐（4,4’_氧二酞酸二酐）、2,3’，4,4’-聯苯基醚四竣 酸二酐、3,3’，4,4’ -二苯基楓四较酸二野、2,3,3’，4，-二苯 基硒四殘酸fp、2,3,6,7 -萘四殘酸二ff、1,2,5,6-萘四竣酸 二酐、1，4,5,8-萘四羧酸二酐、2,3,6,7-蒽四羧酸二酐、 1，2,7,8-菲四羧酸二酐、3,4,9，10-茈四羧酸二酐、2,2-雙[4-(3,4-二羧基苯甲醯氧）苯基]壬二酐、2,2-雙[4- (3,4-二 羧基苯甲醯氧）苯基]癸二酐、2,2-雙[4- (3，4-二羧基苯甲 醯氧）苯基]十三碳院二酐、2,2-雙[4- (3,4-二羧基苯甲醯 氧）苯基]十四碳烷二酐、2,2-雙[4-( 3，4-二羧基苯甲醯氧 )苯基]十五碳烷二酐、1，1-雙[4-(3,4 -二羧基苯甲醯基氧 )苯基]-2-甲基癸二酐、1，1-雙[4· (3，4-二羧基苯甲醯基 氧）苯基]-2·甲基辛二酐、1，1-雙[4- (3，4_二羧基苯甲醯 基氧）苯基]-2-乙基五癸二酐' 2,2-雙[3，5-二甲基-4-( -11 - (7) 1351414 3,4·二羧基苯甲醯基氧）苯基]十二碳烷二酐、2, 二甲基-4- (3,4-二羧基苯甲醯基氧）苯基]癸二酌 (3,5-二甲基- 4-(3，4-二羧基苯甲醯基氧）苯基 烷二酐、2,2-雙（3,5-二乙基-4- (3,4-二羧基苯 )苯基]十五碳烷二酐、1，1-雙[4- (3,4-二羧基苯 )苯基]環己烷二酐、1,1-雙[4- (3，4-二羧基苯甲 苯基]丙基環己烷二酐、1,1-雙[4· (3,4_二羧基苯 )苯基]庚基環己烷二酐、2,2_雙（3,4-二羧基苯 丙烷二酐、4,4-雙（2,3-二羧基苯氧基）二苯基 等。此等係可單獨或併用2種以上而使用。 前述（B)二胺成分可舉例如4,4’-二胺基二 、3,3’-二甲基-4,4’-二胺基二苯基甲烷、3,3’，5,5 4,4’-二胺基二苯基甲烷、3,3’，5,5’-四乙基-4,4’-苯基甲烷、3,3’-二甲基-5,5’-二乙基-4,4’-二胺基 烷、4,4’-亞甲基雙（環己基胺）、3,3’-二甲基-基二環己基甲烷、3,3’-二甲氧基-4,4’-二胺基二 、3,3’-二乙氧基-4,4’ -二胺基二苯基甲烷、雙（ 基）醚、雙（4-胺基苯基）醚、3,4’-二胺基二 3,3’-二乙基-4,4’-二胺基二苯基醚、3，3’-二甲氧g 胺基二苯基醚、雙[4- ( 4-胺基苯氧基）苯基]醚 甲基-4,4’-二胺基二苯基碾、3，3’-二乙基- 4,4’-二 基砸、3,3’-二甲氧基- 4,4’-二胺基二苯基碾、3，: 基-4,4’-二胺基二苯基碾、3,3’-二甲基-4,4、二胺 丙烷、3,3’-二乙基-4,4’-二胺基二苯基丙烷、3,: 2-雙[3,5-:、2,2-雙 )十三碳 甲醯基氧 甲醯基氧 醯基氧） 甲醯基氧 基）四氟 甲烷二酐 苯基甲烷 ’·四甲基-二胺基二 二苯基甲 4,4’-二胺 苯基甲烷 3 -胺基苯 苯基醚、 ϊ -4,4’-二 、3,3，-二 胺基二苯 3’-二乙氧 基二苯基 3’·二甲氧 -12- (8) (8)1351414 基-4,4’-二胺基二苯基丙烷、3,3’-二乙氧基-4,4、二胺基二 苯基丙烷、2,2-雙[4-(4-胺基苯氧基）苯基]丙烷、1，3-雙 (4-胺基苯基）丙烷、2，2-雙（4-胺基苯基）丙烷、4,4’-二胺基二苯基硫醚、3,3’·二甲基-4,4’·二胺基二苯基硫醚 、3,3’-二乙基-4,4’-二胺基二苯基硫醚、3,3’-二甲氧基-4,4’-二胺基二苯基硫醚、3,3二乙氧基-4，4’-二胺基二苯 基硫醚、2,2’-二胺基二乙基硫醚、2,4’-二胺基二苯基硫醚 、m-苯二胺、p-苯二胺、1,3-雙（4-胺基苯氧基）苯、1,2-雙（4-胺基苯基）乙烷、1，2-雙（4-胺基苯基）乙烷、雙 (3-胺基苯基）楓、雙（4-胺基苯基）颯、〇-甲苯胺颯、 雙[4- ( 4-胺基苯氧基）苯基]楓、雙[4- ( 3-胺基苯氧基） 苯基]颯、4,4’-二胺基二苯甲基亞颯、雙（4_胺基苯基） 二乙基矽烷、雙（4-胺基苯基）二苯基矽烷、氧化雙（4-胺基苯基）乙基磷、氧化雙（4-胺基苯基）苯基磷、雙（ 4-胺基苯基）-N_苯基胺、雙（4-胺基苯基）-N-甲基胺、 1,2-二胺基萘、1，4-二胺基萘、1，5-二胺基萘、1,6-二胺基 萘、1，7_二胺基萘、1，8-二胺基萘、2,3-二胺基萘、2,6-二 胺基萘、1，4-二胺基-2-甲基萘、1，5-二胺基-2-甲基萘、 1，3-二胺基-2-苯基萘、9,9-雙（4-胺基苯基）芴、4,4’-二 胺基聯苯基、3,3’-二胺基聯苯基、3,3’-二羥基-4,4’-二胺 基聯苯基、3，3’·二氯-4,4’-二胺基聯苯基、3,3’-二甲基-4,4’-二胺基聯苯基、3，4’-二甲基-4,4’-二胺基聯苯基、 3,3’-二甲氧基-4,4、二胺基聯苯基、4，4’-雙（4-胺基苯氧 基）聯苯基、2,4-二胺基甲苯、2,5-二胺基甲苯、2,6-二胺 -13- (9) (9)1351414 基甲苯、3,5-二胺基甲苯、1-甲氧基-2,4-二胺基苯、1，3-二胺基_4,6_二甲基苯、1,4-二胺基-2,5-二甲基苯、二 胺基-2-甲氧基-5-甲基苯、i，4-二胺基-2,3,5,6-四甲基苯、 1，4-雙（2-甲氧基-4_胺基戊基）苯、】，4_雙（1，1-二甲基-5-胺基戊基）苯、ι，4-雙（4-胺基苯氧基）苯、〇·苯二甲 胺、m -苯二甲胺、p_苯二甲胺、9,10 -雙（4 -胺基苯基）蒽 、3，3’_二胺基二苯甲酮、4，4，-二胺基二苯甲酮、4 -胺基苯 基-3 -胺基苯甲酸酯、2，2 -雙（4 -胺基苯基）六氟丙烷、 2,2 -雙（3 -胺基苯基）六氟丙烷、2- (3_胺基苯基）-2-( 4-胺基苯基）六氟丙烷' 2，2-雙[4- (4-胺基苯氧基）苯基] 六氟丙烷、2,2-雙[4-( 4-胺基苯氧基）苯基]丙烷' U卜雙 (4-胺基苯基）-]_苯基-2,2,2_三氟乙烷、1，1-雙[4-(4-胺 基苯氧基）苯基]_丨_苯基-2,22_三氟乙烷、雙（3-胺基 苯基）六氟丙烷、1，3 -雙（3 -胺基苯基）十氟丙烷、2,2-雙（3-胺基-4-羥基苯基）六氟丙烷、2,2-雙（3-胺基-4-甲 基苯基）六氟丙烷、2,2 -雙（5 -胺基-4-甲基苯基）六氟丙 烷、1，4-雙（3-胺基苯基）丁 ·ΐ_烯-3-炔等。 此處’若於（Α)四羧酸二酐成分及（Β)二胺成分之 任一者或於兩者之主鏈上含有碳數5 ~2 0的伸烷基鏈，可 實現低溫硬化性、可撓性、低吸水率及低翹曲性。吸水率 高時，成爲耐遷移性降低之原因，故熱硬化後之樹脂組成 物係宜吸水率低。 又，若於（Α)四羧酸二酐成分及（Β)二胺成分之任 一者或於兩者之主鏈上含有脂環式之烴基及/或芳香族基 -14- (10) 1351414 ，可提昇耐熱性。 又，本發明之聚醯胺酸係宜不含有聚伸烷基氧基等之(2) (In the formula (2), "Ar represents a tetravalent organic group, and Ar4 is a divalent organic group, and m is an integer of 1 or more). In the flip chip mounting method of the present invention, at least one of the semiconductor wafer and the flexible wiring substrate is formed by previously forming a resin composition for sealing the entangled agent, and then thermally bonding the semiconductor Wafer and flexible wiring substrate. When the layer-forming resin composition of the resin composition contains the above-mentioned polyaminic acid, it is applied to either or both of the semiconductor wafer and the flexible wiring substrate, and can be cured by curing. Further, when the resin composition contains the polyimine, the resin composition is formed into a thin film, and the obtained film can be adhered to either or both of the semiconductor wafer and the flexible wiring substrate. -9- (5) (5) 1351414 The heat bonding is a eutectic of a gold bump of the semiconductor wafer and a tin-plated metal of the wiring of the printed circuit board, or a gold bump of the semiconductor wafer and the wiring The method of the present invention can also be suitably carried out in the case of gold-plated bonding of the wiring of the circuit board. The flip chip mounted article of the present invention is characterized in that the semiconductor wafer and the flexible semiconductor are filled by thermally curing or heating and melting the resin composition of the sealing agent of the present invention to form a bonding layer. The gap between the wiring boards. According to the present invention, in a flip chip mounting method in which a flexible wiring board for sealing a charge agent is disposed in advance, by using a specific thermoplastic resin composition, that is, a resin composition for a closed enthalpy of the present invention, It can maintain a moderate thickness after coating, and has moderate fluidity during heat bonding, and can fill the gap between the semiconductor wafer and the flexible wiring board substrate without gaps, without decomposition or hair caused by heating during bonding. The foam is dissolved and solidified at an appropriate speed, and has high electrical insulation after curing, and does not have corrosion factors of the electrode on the wiring board, and can provide a closed enthalpy which is excellent in storage stability at normal temperature. (Best Mode for Carrying Out the Invention) Hereinafter, a preferred embodiment of the present invention will be described in detail. The resin composition for a closed enthalpy of the present invention is characterized in that it contains a polyaminic acid and/or a polyimide, but when a semiconductor wafer or a flexible wiring board substrate is formed into a solution and coated, From the viewpoint of the solubility of the resin in an organic solvent, polylysine is preferably used. (6) (6) 1351414 The polyaminic acid contained in the resin composition of the present invention is preferably a polyamic acid represented by the above formula (1). The polyamic acid can be obtained by reacting (A) a tetracarboxylic dianhydride component with (B) a diamine component. The (A) tetracarboxylic dianhydride component may, for example, be diphenyl pyromellitic, 1,2,3,4-benzenetetracarboxylic anhydride, 1,2,3,4-cyclobutanetetracarboxylic anhydride, or 2,4,5·cyclopentanetetracarboxylic anhydride, 1,2,4,5-cyclohexanetetracarboxylic anhydride, 2,3,5·tricarboxycyclopentylacetic acid dianhydride 3,3',4, 4'-bicyclohexyltetracarboxylic anhydride, 3,3,,4,4,_biphenyltetracarboxylic anhydride, 2,3,3',4'-biphenyltetracarboxylic dianhydride, 3,3', 4,4'-biphenyltetracarboxylic dianhydride, 3,3',4,4'-benzophenonetetracarboxylic anhydride, 3,3',4,4'-benzophenone tetracarboxylic acid Anhydride, 3,3,,4,4,-biphenyl ether tetracarboxylic anhydride (4,4'-oxydiphthalic acid dianhydride), 2,3',4,4'-biphenyl ether tetradecanoic acid Di-anhydride, 3,3',4,4'-diphenyl maple tetra-acid, two, 3,3,3',4,-diphenyl selenium tetraresidic acid fp, 2,3,6,7 - Naphthalene tetraresidic acid ff, 1,2,5,6-naphthalene tetraphthalic acid dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 2,3,6,7-nonanedicarboxylic acid Anhydride, 1,2,7,8-phenanthrenetetracarboxylic dianhydride, 3,4,9,10-decanetetracarboxylic dianhydride, 2,2-bis[4-(3,4-dicarboxybenzamide) Oxy)phenyl]sebacic anhydride, 2,2-bis[4-(3,4-dicarboxybenzyloxy)phenyl] Diacetate, 2,2-bis[4-(3,4-dicarboxybenzyloxy)phenyl]tridecyl dianhydride, 2,2-bis[4-(3,4-dicarboxybenzyl) Oxygen)phenyl]tetradecane dianhydride, 2,2-bis[4-(3,4-dicarboxybenzyloxy)phenyl]pentadecane dianhydride, 1,1-double [4] -(3,4-dicarboxybenzylideneoxy)phenyl]-2-methylphosphonium dianhydride, 1,1-bis[4·(3,4-dicarboxybenzylideneoxy)phenyl] -2·Methyl octanehydride, 1,1-bis[4-(3,4-dicarboxybenzylideneoxy)phenyl]-2-ethylpentaphthalic anhydride' 2,2-bis[3 ,5-Dimethyl-4-( -11 - (7) 1351414 3,4·dicarboxybenzylideneoxy)phenyl]dodecane dianhydride, 2, dimethyl-4- (3, 4-dicarboxybenzimidyloxy)phenyl]indole (3,5-dimethyl-4-(3,4-dicarboxybenzylideneoxy)phenylalkane dianhydride, 2,2- Bis(3,5-diethyl-4-(3,4-dicarboxyphenyl)phenyl]pentadecane dianhydride, 1,1-bis[4-(3,4-dicarboxyphenyl)phenyl Cyclohexane dianhydride, 1,1-bis[4-(3,4-dicarboxybenzylphenyl)propylcyclohexane dianhydride, 1,1-bis[4·(3,4-dicarboxybenzene) Phenyl]heptylcyclohexane dianhydride, 2,2-bis (3,4-dicarboxyphenylpropane dianhydride, 4,4-bis (2) (3-dicarboxyphenoxy)diphenyl, etc. These may be used alone or in combination of two or more. The above (B) diamine component may, for example, be 4,4'-diaminodi, 3,3. '-Dimethyl-4,4'-diaminodiphenylmethane, 3,3',5,5 4,4'-diaminodiphenylmethane, 3,3',5,5'- Tetraethyl-4,4'-phenylmethane, 3,3'-dimethyl-5,5'-diethyl-4,4'-diaminoalkane, 4,4'-methylene double (cyclohexylamine), 3,3'-dimethyl-dicyclohexylmethane, 3,3'-dimethoxy-4,4'-diaminodi, 3,3'-diethoxy -4,4'-diaminodiphenylmethane, bis(yl)ether, bis(4-aminophenyl)ether, 3,4'-diaminodi 3,3'-diethyl-4 , 4'-diaminodiphenyl ether, 3,3'-dimethoxyg-aminodiphenyl ether, bis[4-(4-aminophenoxy)phenyl]ethermethyl-4, 4'-Diaminodiphenyl milling, 3,3'-diethyl-4,4'-diylindole, 3,3'-dimethoxy-4,4'-diaminodiphenyl Milled, 3,: 4,4'-diaminodiphenyl milling, 3,3'-dimethyl-4,4, diamine propane, 3,3'-diethyl-4,4' -diaminodiphenylpropane, 3,:2-bis[3, 5-:,2,2-bis)tridecylcarbenyloxycarbamoyloxycarbonyloxy)methylcarbonyloxy)tetrafluoromethane dianhydride phenylmethane '·tetramethyl-diamine di Phenylmethyl 4,4'-diaminophenylmethane 3-aminophenylphenyl ether, ϊ-4,4'-di,3,3,-diaminodiphenyl 3'-diethoxydiphenyl 3'-Dimethoxy-12-(8) (8) 1351414-based 4,4'-diaminodiphenylpropane, 3,3'-diethoxy-4,4, diaminodi Phenylpropane, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, 1,3-bis(4-aminophenyl)propane, 2,2-bis(4-amine Phenyl)propane, 4,4'-diaminodiphenyl sulfide, 3,3'.dimethyl-4,4'diaminodiphenyl sulfide, 3,3'-diethyl Base-4,4'-diaminodiphenyl sulfide, 3,3'-dimethoxy-4,4'-diaminodiphenyl sulfide, 3,3 diethoxy-4, 4'-Diaminodiphenyl sulfide, 2,2'-diaminodiethyl sulfide, 2,4'-diaminodiphenyl sulfide, m-phenylenediamine, p-benzene Amine, 1,3-bis(4-aminophenoxy)benzene, 1,2-bis(4-aminophenyl)ethane, 1,2-bis(4-aminophenyl)ethane, Bis(3-aminobenzene Maple, bis(4-aminophenyl)anthracene, fluorene-toluidine oxime, bis[4-(4-aminophenoxy)phenyl]azepine, bis[4-(3-aminophenoxy) Phenyl]anthracene, 4,4'-diaminobenzhydrylhydrazine, bis(4-aminophenyl)diethyldecane, bis(4-aminophenyl)diphenylnonane, oxidation Bis(4-aminophenyl)ethylphosphine, bis(4-aminophenyl)phenylphosphine oxide, bis(4-aminophenyl)-N-phenylamine, bis(4-aminobenzene) -N-methylamine, 1,2-diaminonaphthalene, 1,4-diaminonaphthalene, 1,5-diaminonaphthalene, 1,6-diaminonaphthalene, 1,7_2 Amino naphthalene, 1,8-diaminonaphthalene, 2,3-diaminonaphthalene, 2,6-diaminonaphthalene, 1,4-diamino-2-methylnaphthalene, 1,5-di Amino-2-methylnaphthalene, 1,3-diamino-2-phenylnaphthalene, 9,9-bis(4-aminophenyl)anthracene, 4,4'-diaminobiphenyl, 3,3'-diaminobiphenyl, 3,3'-dihydroxy-4,4'-diaminobiphenyl, 3,3'-dichloro-4,4'-diaminobiphenyl , 3,3'-dimethyl-4,4'-diaminobiphenyl, 3,4'-dimethyl-4,4'-diaminobiphenyl, 3,3'-di Methoxy-4,4,diaminobiphenyl, 4 , 4'-bis(4-aminophenoxy)biphenyl, 2,4-diaminotoluene, 2,5-diaminotoluene, 2,6-diamine-13- (9) (9 ) 1351414 toluene, 3,5-diaminotoluene, 1-methoxy-2,4-diaminobenzene, 1,3-diamino-4,6-dimethylbenzene, 1,4- Diamino-2,5-dimethylbenzene, diamino-2-methoxy-5-methylbenzene, i,4-diamino-2,3,5,6-tetramethylbenzene, 1,4-bis(2-methoxy-4-aminopentyl)benzene,], 4-bis(1,1-dimethyl-5-aminopentyl)benzene, ι,4-double ( 4-aminophenoxy)benzene, anthracene xylylenediamine, m-xylylenediamine, p-xylylenediamine, 9,10-bis(4-aminophenyl)anthracene, 3,3' _Diaminobenzophenone, 4,4,-diaminobenzophenone, 4-aminophenyl-3-aminobenzoate, 2,2-bis(4-aminophenyl) Hexafluoropropane, 2,2-bis(3-aminophenyl)hexafluoropropane, 2-(3-aminophenyl)-2-(4-aminophenyl)hexafluoropropane '2,2 - bis[4-(4-aminophenoxy)phenyl]hexafluoropropane, 2,2-bis[4-(4-aminophenoxy)phenyl]propane' Ub-bis(4-amine Phenyl)-]-phenyl-2,2,2-trifluoroethane, 1,1-bis[4-(4-amine Phenoxy)phenyl]-indole_phenyl-2,22-trifluoroethane, bis(3-aminophenyl)hexafluoropropane, 1,3-bis(3-aminophenyl)decafluoro Propane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, 2,2-bis(3-amino-4-methylphenyl)hexafluoropropane, 2,2-di (5-Amino-4-methylphenyl)hexafluoropropane, 1,4-bis(3-aminophenyl)butane-en-3-yne, and the like. Here, if any of the tetracarboxylic dianhydride component and the (deuterium) diamine component or the alkyl chain of 5 to 20 carbon atoms is present in the main chain of the (Α), low temperature hardening can be achieved. Properties, flexibility, low water absorption and low warpage. When the water absorption rate is high, the migration resistance is lowered, so that the resin composition after the heat curing is preferably low in water absorption. Further, the alicyclic hydrocarbon group and/or the aromatic group-14-(10) may be contained in the main chain of the (Α) tetracarboxylic dianhydride component and the (indenyl) diamine component. 1351414 for improved heat resistance. Further, the polyamic acid of the present invention preferably does not contain a polyalkyleneoxy group or the like.

醚鍵。醚鍵係在高溫下鍵易被破壞，因此成爲樹脂之耐熱 性（減少5%重量的溫度）降低的原因。進一步，若具有 醚鍵，易吸水，亦成爲對絕緣特性（HAST )等造成不良 影響的原因。具有不含如此之醚鍵的碳數 5〜20的伸烷基 之聚醯胺酸，可舉例如以下述通式（1A)所示之化合物。 又，相同地，具有不含前述醚鍵之碳數5〜20的伸烷基之 聚醯亞胺，可舉例如以下述通式（2A)所示之化合物。 I化3】Ether bond. Since the ether bond is easily broken at a high temperature, it is a cause of a decrease in heat resistance (temperature of 5% by weight) of the resin. Further, if it has an ether bond, it is easy to absorb water, which also causes adverse effects on insulation properties (HAST) and the like. The polyamino acid having an alkylene group having 5 to 20 carbon atoms which does not contain such an ether bond may, for example, be a compound represented by the following formula (1A). Further, in the same manner, the polyimine having an alkylene group having 5 to 20 carbon atoms which does not contain the ether bond may, for example, be a compound represented by the following formula (2A). I 3]

—NH Ar1 HN一八〆· HOOC〆 \〇ΟΟΗ Ο 0 / (1Α)—NH Ar1 HN 一八〆· HOOC〆 \〇ΟΟΗ Ο 0 / (1Α)

(式（1Α)中，Ar1表示以下述通式（3)所示之4價 之有機基及/或Ar2爲以下述通式（4 )所示之2價之有機 基，丨爲1以上之整數）(In the formula (1), Ar1 represents a tetravalent organic group represented by the following formula (3) and/or Ar2 is a divalent organic group represented by the following formula (4), and 丨 is 1 or more. Integer)

(2A) (式（2A )中，Ar3表示以下述通式（2 )所示之4價 之有機基及/或Ar4爲以下述通式（3 )所示之2價之有機 基，m爲1以上之整數） -15- C S ) 1351414 化(2A) (In the formula (2A), Ar3 represents a tetravalent organic group represented by the following formula (2) and/or Ar4 is a divalent organic group represented by the following formula (3), and m is An integer greater than 1) -15- CS ) 1351414

o=c·o=c·

X 〇=&lt; ko ‘οX 〇=&lt; ko ‘ο

V—/ 3 /\V—/ 3 /\

(式3 )中，X表示碳數5~2〇之伸烷基，R1及R2係 分別獨立地表示氫原子、碳數1~6的烷基或碳數1〜3之院 氧基，m及η分爲獨立地爲1〜3之整數。） 【化6】 -γ2-Ζ — γΐ一 (4) (式（4)中，Ζ表示單鍵或2價之有機，Υ1及Υ2分 別獨立地表示碳數5〜20之伸烷基） 又，在前述通式（4)中，藉由Ζ爲以下述通式（5) 、通式（6)及/或通式（7)所示之聚醯胺酸，可進一步 提昇低溫硬化（〜2 0 0 °C )、低翹曲性、耐熱性（減少5重 量％溫度）、絕緣性及低吸水性。 【化7】In the formula (3), X represents an alkylene group having 5 to 2 carbon atoms, and R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or an alkoxy group having 1 to 3 carbon atoms, m. And η are independently divided into integers of 1 to 3. (6) -γ2-Ζ - γΐ一(4) (In the formula (4), Ζ represents a single bond or a divalent organic group, and Υ1 and Υ2 each independently represent an alkylene group having a carbon number of 5 to 20) In the above formula (4), the polyamic acid represented by the following formula (5), formula (6) and/or formula (7) can be further improved by low temperature hardening (~ 2 0 0 ° C), low warpage, heat resistance (5% by weight temperature reduction), insulation and low water absorption. 【化7】

(5) (式（5)中，R3表示氫原子、碳數1〜1〇之烷基、碳 數1〜10之烯烴基或碳數1~3之烷氧基’m表示1〜4之整 數，又m爲2以上時，複數存在之R3可爲相同，亦可相 異） (β ) -16- (6) 1351414 (12) 【化8】(5) (In the formula (5), R3 represents a hydrogen atom, an alkyl group having 1 to 1 carbon atom, an olefin group having 1 to 10 carbon atoms or an alkoxy group having 1 to 3 carbon atoms, and m represents 1 to 4 Integer, if m is 2 or more, R3 in the plural may be the same or different) (β ) -16- (6) 1351414 (12) [Chem. 8]

(R4)n (式（6)中，R4表示氫原子、碳數1〜10之烷基、碳 數1〜10之烯烴基或碳數1〜3之烷氧基，η表示1~4之整 數，又η爲2以上時，複數存在之R3可爲相同，亦可相 異）(R4)n (In the formula (6), R4 represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an olefin group having 1 to 10 carbon atoms or an alkoxy group having 1 to 3 carbon atoms, and η represents 1 to 4; Integer, when η is 2 or more, R3 in the plural may be the same or different)

【化9】 (R5)p (式（7)中，R5表示氫原子、碳數1~10之烷基、碳 數1〜10之烯烴基或碳數1~3之烷氧基，η表示卜4之整 數，又η爲2以上時，複數存在之R3可爲相同，亦可相(R5)p (In the formula (7), R5 represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an olefin group having 1 to 10 carbon atoms or an alkoxy group having 1 to 3 carbon atoms, and η represents When the integer of Bu 4 is η or more, R3 of the plural number may be the same, or

於前述主鏈具有碳數5〜20之伸烷基的（Α)四羧酸二 酐成分，可舉例如以下述通式（8 )所示之化合物。The (fluorene) tetracarboxylic dianhydride component having a pendant alkyl group having 5 to 20 carbon atoms in the main chain may, for example, be a compound represented by the following formula (8).

(式（8)中，X表示碳數5 ~20之伸烷基） 以前述式（8 )所示之化合物可舉例如五亞甲基雙偏 苯三甲酸二酐、六亞甲基雙偏苯三甲酸二酐、七亞甲基雙 偏苯三甲酸二酐、八亞甲基雙偏苯三甲酸二酐、九亞甲基 -17 - (13) 1351414 雙偏苯三甲酸二酐、十亞甲基雙偏苯三甲酸二酐、十二亞 甲基雙偏苯三甲酸二酐等。 此等係可單獨或組合2種而使用。 於前述主鏈具有碳數5〜2 0之伸烷基之（B)二胺成分 可舉例如六亞甲基二胺' 七亞甲基二胺、八亞甲基二胺、 九亞甲基二胺、十亞甲基二胺、2,11-二胺基十二碳烷、 1，12 -二胺基十八碳烷、2,5-二甲基六亞甲基二胺、3 -甲基 七亞甲基二胺、2,5-二甲基七亞甲基二胺、4，4-二甲基七 亞甲基二胺、5·甲基九亞甲基二胺、3 -甲氧基六亞甲基二 胺等之脂肪族二胺、以下述通式（9 ) 、（ 1 0 )及/或（1 1 )所示之化合物等。(In the formula (8), X represents an alkylene group having 5 to 20 carbon atoms). The compound represented by the above formula (8) may, for example, be penta methylene beter trimellitic dianhydride or hexamethylene double bias. Benzoic acid dianhydride, heptamethylene trimellitic acid dianhydride, octamethylene trimellitic acid dianhydride, ninamethylene-17 - (13) 1351414 bis-trimellitic dianhydride, ten Methylene-p-trimellitic dianhydride, dodecamethylene-p-trimellitic dianhydride, and the like. These may be used singly or in combination of two. The (B) diamine component having an alkylene group having a carbon number of 5 to 20 in the main chain may, for example, be hexamethylenediamine 'heptamethylenediamine, octamethylenediamine, and ninth methylene group. Diamine, decamethyldiamine, 2,11-diaminododecane, 1,12-diaminooctadecane, 2,5-dimethylhexamethylenediamine, 3 - Methyl heptamethylenediamine, 2,5-dimethyl heptamethylenediamine, 4,4-dimethyl heptamethylenediamine, 5·methylpentamethylenediamine, 3 - An aliphatic diamine such as methoxyhexamethylenediamine or a compound represented by the following formula (9), (10) and/or (1 1 ).

(式（9)中，Y1及Y2分別獨立地表示碳數5〜20之 伸院基’ R6表不氫原子、碳數1〜10之院基、碳數1〜10之 烯烴基或碳數1〜3之烷氧基，q表示1~4之整數，又q爲 2以上時，複數存在之R6可爲相同，亦可相異）(In the formula (9), Y1 and Y2 each independently represent a carbon number of 5 to 20, and the R6 represents a hydrogen atom, a carbon number of 1 to 10, an olefin group having a carbon number of 1 to 10, or a carbon number. 1 to 3 alkoxy, q represents an integer from 1 to 4, and when q is 2 or more, the plural R6 may be the same or different)

【化1 2】 (10) (式（10)中，Y1及Y2分別獨立地表示碳數5〜20之 伸院基’ R7表示氫原子、碳數1〜1〇之烷基、碳數1~]〇之 -18· (14) 1351414 烯烴基或碳數1~3之烷氧基，r表示1〜4之整數，又r爲(10) (10) In the formula (10), Y1 and Y2 each independently represent a carbon number of 5 to 20, and R7 represents a hydrogen atom, an alkyl group having a carbon number of 1 to 1 Å, and a carbon number of 1. ~]〇之-18· (14) 1351414 Olefin group or alkoxy group having 1 to 3 carbon atoms, r represents an integer of 1 to 4, and r is

2以上時，複數存在之R7可爲相同，亦可相異）When 2 or more, the R7 in the plural can be the same or different.

(式（1 1 )中，Y1及Y2分別獨立地表示碳數5〜20之 伸烷基，R8表示氫原子、碳數1〜10之烷基、碳數1〜10之 烯烴基或碳數1〜3之烷氧基，s表示1〜4之整數，又s爲 2以上時，複數存在之R8可爲相同，亦可相異） 以前述通式（10 )所示之化合物係[3,4-雙（1-胺基庚 基）-6·己基-5- ( 1-辛烯基）]環己烯（商品名「 Versamine551」，Cognis Japan (股）公司製）作爲市售 品而獲得。此等係可單獨或組合2種而使用。 本發明所使用之聚醯胺酸係從提昇低溫硬化（〜200°C )、低翹曲性、耐熱性（減少5重量％溫度）、絕緣性及 低吸水性的觀點，如前述般，宜爲可藉由（A)四羧酸二 酐成分與（B )二胺成分之反應而得到之於主鏈具有碳數 5~20之伸烷基鏈，其中，更宜爲碳數6~16之伸烷基鏈， 尤宜爲碳數7〜14之伸烷基鏈。具有碳數不足5之伸烷基 時，係樹脂之吸水率、彈性率有上昇之傾向，具有碳數超 過20之伸烷基時，有耐熱性等降低之傾向。 本發明所使用之聚醯胺酸係約等莫耳之（A)酸成分 與（B )二胺成分在有機溶劑中80°C以下，宜爲50°C以下 之反應溫度下加成聚合反應1〜1 2小時而得到。 (15) (15)1351414 使前述（A)四羧酸二酐與前述（B)二胺成分反應時 之溶劑可舉例如含氮系溶劑類（N，N’-二甲基亞颯、N，N’-二甲基甲醯胺、N，N’-二乙基甲醯胺、Ν,Ν’-二甲基乙醯胺 、：Ν,Ν’·二乙基乙醯胺、Ν-甲基-2 _吡咯烷酮、六亞甲基磷 醯胺Ν-甲基吡咯烷酮等）、內酯類（γ-丁內酯、戊內酯 、γ-己內酯、ε-己內酯、乙醯基-γ_ 丁內酯等）、脂環 式酮類（環己酮、4 -甲基環己酮等）、醚類（3 -甲基-3-甲 氧基丁基乙酸酯、二乙二醇二甲基醚乙酸酯等）等。此等 之中，更宜爲含氮系溶劑類、脂環式酮類等，尤宜爲Ν-甲基-2-吡咯烷酮、環己酮。此等係可單獨或混合兩種以上 而使用。 前述（Α)四羧酸二酐成分與（Β)二胺成分之組合， 宜考慮最終硬化後之聚醯亞胺樹脂膜的耐熱性、機械特性 、電氣特性而選擇。 含有本發明中之聚醢胺酸的樹脂組成物，係塗佈於半 導體晶片或可撓性配線板基板的任一者或兩者後，含有溶 劑時，係乾燥溶劑後，使耐熱性爲良好的目的，宜以醯亞 胺化率成爲80%以上之方法熱硬化。用以熱硬化之溫度係 從對半導體之負荷減輕、半導體裝置之翹曲減輕的觀點， 宜爲250°C以下，更宜爲220°C以下，尤宜爲200°C以下。 又，此醯亞胺化率之測定係可以透過法測定紅外線吸 收光譜。 又，醯亞胺化率之値係理論上使用3 0 0 °C下硬化1時 之硬化膜（樹脂膜厚：5 μηι )被1 00 %醯亞胺化時（對照 -20- (16) (16)1351414 )，可依以下之式算出。 醯亞胺化率= {(K/L) - (Μ/Ν)}/{(0/Ρ)~ (M/N)} (式中，K係樹脂組成物硬化後（任意的溫度）之 1 3 75CHT1附近的極大譜峰的吸光度，L係樹脂組成物硬化 後（任意的溫度）之lSOOcirT1附近的極大譜峰的吸光度 ，Μ係樹脂組成物硬化前之1 3 75cm」附近的極大譜峰的 吸光度，N係樹脂組成物硬化前之1500CHT1附近的極大譜 峰的吸光度，〇係使樹脂組成物在300 °C下硬化1時後之 1 3 75CHT1附近的極大譜峰的吸光度，P係使樹脂組成物在 3 00°C下硬化1時後之liOOcnT1附近的極大譜峰的吸光度 ) 前述形成以醯亞胺化率爲8 0 %以上之樹脂（聚醯亞胺 )的樹脂組成物之半導體晶片及/或可撓性配線板基板， 加熱至前述樹脂組成物熔融之溫度而可與半導體晶片與配 線電路基板接合。此時之接合溫度係從對半導體之負荷減 輕，、半導體裝置之翹曲減輕及鏟錫等的金屬熔融溫度觀 點，宜爲 20〇t~500°C，更宜爲 250°C〜450°C，尤宜爲 3 5 0〇C~4 2 0〇C。 含有使聚醯胺酸熱硬化而被聚醯亞胺化之樹脂的封閉 塡充劑用樹脂組成物之流動性、分解或發泡之抑制、適度 之熔解、固化時間之設定、及接合後之封裝體的耐熱性， 係可以改變所使用之（A )四羧酸二酐成分與（B )二胺成 -21 - (17) (17)1351414 分自由地調整。又，宜希望可跟隨可撓性配線板基板、防 焊漆等之變形，耐彎折性優者。 又，本發明之封閉塡充劑用樹脂組成物係含有聚醯亞 胺樹脂時，使此樹脂組成物以特定之膜原薄膜化者貼黏於 半導體晶片或配線電路基板之任一者或兩者後，加熱到含 有前述聚醯亞胺樹脂的樹脂組成物熔融之溫度而接合半導 體晶片與配線電路基板。 含有前述聚醯亞胺樹脂之樹脂組成物的薄膜化係可依 常用方法而製作。又，使含有聚醯亞胺樹脂之樹脂組成物 薄膜化而使用時，亦與前述聚醯胺酸同樣，若於表示聚醯 亞胺之通式（2 )中的主鏈（Ar3及/或 Ar4 )含有碳數 5〜20之伸烷基鏈，可提昇低溫硬化性、可撓性、低吸水率 及低翹曲性。 又，於本發明之封閉塡充劑用樹脂組成物中，可併用 前述聚醯胺酸或前聚醯亞胺以外之熱塑性樹脂。前述聚醯 胺酸或前聚醯亞胺以外之熱塑性樹脂可舉例如聚乙烯、聚 丙烯、聚偏氟乙烯、聚酯 '聚丙烯腈、聚苯乙烯、聚醯胺 、聚醯胺醯亞胺、聚苯等。此等之熱塑性樹脂係可一種單 獨或組合2種以上而使用，但符合使用條件例如使用溫度 乃很重要。 又，本發明之封閉塡充劑用樹脂組成物係從提昇接著 性之觀點，可調配多種之添加劑。如此之添加劑可舉例如 消泡劑 '矽烷偶合劑、無機或有機塡充劑、顏料等。 又，本發明之封閉塡充劑用樹脂組成物係從可提昇耐(In the formula (1 1 ), Y1 and Y2 each independently represent an alkylene group having 5 to 20 carbon atoms, and R8 represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, an olefin group having 1 to 10 carbon atoms or a carbon number. 1 to 3 alkoxy groups, s represents an integer of 1 to 4, and when s is 2 or more, the plural R8 may be the same or different) The compound represented by the above formula (10) [3 4-bis(1-aminoheptyl)-6-hexyl-5-(1-octenyl)]cyclohexene (trade name "Versamine 551", manufactured by Cognis Japan Co., Ltd.) as a commercial product obtain. These may be used singly or in combination of two. The polyglycolic acid used in the present invention is preferably from the viewpoint of improving low-temperature curing (~200 ° C), low warpage, heat resistance (5% by weight reduction in temperature), insulation, and low water absorption. The alkylene chain having a carbon number of 5 to 20 in the main chain obtained by the reaction of the (A) tetracarboxylic dianhydride component and the (B) diamine component, wherein the carbon number is preferably 6 to 16 The alkyl chain is particularly preferably an alkyl chain having a carbon number of 7 to 14. When the alkylene group having a carbon number of less than 5 is used, the water absorption ratio and the modulus of elasticity of the resin tend to increase, and when the alkylene group having a carbon number of more than 20 is used, heat resistance and the like tend to be lowered. The polyaminic acid used in the present invention is an addition polymerization reaction of the (A) acid component and the (B) diamine component in an organic solvent at 80 ° C or lower, preferably at a reaction temperature of 50 ° C or lower. 1~1 2 hours to get. (15) (15) 1351414 The solvent in the case of reacting the above (A) tetracarboxylic dianhydride with the above (B) diamine component may, for example, be a nitrogen-containing solvent (N,N'-dimethyl fluorene, N , N'-dimethylformamide, N,N'-diethylformamide, hydrazine, Ν'-dimethylacetamide, hydrazine, Ν'·diethylacetamide, hydrazine- Methyl-2_pyrrolidone, hexamethylenephosphonium oxime-methylpyrrolidone, etc.), lactones (γ-butyrolactone, valerolactone, γ-caprolactone, ε-caprolactone, acetamidine) Base-γ-butyrolactone, etc.), alicyclic ketones (cyclohexanone, 4-methylcyclohexanone, etc.), ethers (3-methyl-3-methoxybutyl acetate, diethyl Glycol dimethyl ether acetate, etc.). Among these, it is more preferably a nitrogen-containing solvent or an alicyclic ketone, and particularly preferably Ν-methyl-2-pyrrolidone or cyclohexanone. These may be used singly or in combination of two or more. The combination of the above (Α) tetracarboxylic dianhydride component and the (indenyl) diamine component is preferably selected in consideration of heat resistance, mechanical properties, and electrical properties of the finally cured polyimide film. The resin composition containing the polyglycolic acid of the present invention is applied to either or both of a semiconductor wafer or a flexible wiring board substrate, and when a solvent is contained, the heat resistance is good after drying the solvent. The purpose is to be thermally hardened by a method in which the imidization ratio of bismuth is 80% or more. The temperature for thermal hardening is preferably 250 ° C or less, more preferably 220 ° C or less, and particularly preferably 200 ° C or less from the viewpoint of reducing the load on the semiconductor and reducing the warpage of the semiconductor device. Further, the measurement of the imidization ratio of the oxime can be carried out by measuring the infrared absorption spectrum by a method. Further, the bismuth of the hydrazine imidation rate is theoretically used when the cured film (resin film thickness: 5 μηι) hardened at 300 ° C is imidized by 100% hydrazine (control -20-(16) (16) 1351414), which can be calculated according to the following formula.醯 imidization rate = {(K / L) - (Μ / Ν)} / {(0 / Ρ) ~ (M / N)} (in the formula, K resin composition after hardening (arbitrary temperature) 1 3 The absorbance of the maximum peak near 75 CHT1, the absorbance of the maximum peak near lSOOcirT1 after the L-based resin composition is cured (arbitrary temperature), and the maximum peak near the 1 3 75 cm before the curing of the lanthanum resin composition. The absorbance of the maximum peak near 1500 CHT1 before curing of the N-based resin composition, and the absorbance of the maximum peak near 1 3 75 CHT1 after the resin composition was cured at 300 ° C for 1 hour, P-system The absorbance of the maximum peak in the vicinity of liOOcnT1 after the resin composition is cured at 100 ° C for 1 hour.) The semiconductor having a resin composition of a resin (polyimine) having a sulfhydrylation ratio of 80% or more The wafer and/or the flexible wiring board substrate can be bonded to the semiconductor wafer and the printed circuit board by heating to a temperature at which the resin composition is melted. The bonding temperature at this time is preferably from 20 〇 to 500 ° C, more preferably from 250 ° C to 450 ° C, from the viewpoint of reducing the load on the semiconductor, reducing the warpage of the semiconductor device, and melting the metal such as squeezing tin. It is especially suitable for 3 5 0〇C~4 2 0〇C. The fluidity, decomposition or foaming inhibition of the resin composition for a closed enthalpy containing a resin which is thermally cured by polyacrylic acid and which is polyilyminated, and the setting of the curing time, the setting of the curing time, and the bonding The heat resistance of the package can be adjusted freely by changing the (A) tetracarboxylic dianhydride component used and the (B) diamine to 21 - (17) (17) 1351414. Further, it is desirable to follow the deformation of the flexible wiring board substrate, the solder resist, and the like, and it is excellent in bending resistance. Further, when the resin composition for a closed enthalpy of the present invention contains a polyimide resin, the resin composition is adhered to either or both of a semiconductor wafer or a printed circuit board by a specific film. After that, the semiconductor wafer and the printed circuit board are bonded by heating to a temperature at which the resin composition containing the polyimine resin is melted. The film formation of the resin composition containing the above polyimine resin can be produced by a usual method. Moreover, when the resin composition containing a polyimine resin is thinned and used, similarly to the above-mentioned poly-proline, the main chain (Ar3 and/or Ar4) contains an alkylene chain having a carbon number of 5 to 20, which can improve low-temperature hardenability, flexibility, low water absorption, and low warpage. Further, in the resin composition for a closed entangler of the present invention, a thermoplastic resin other than the above polyamic acid or prepolyimine may be used in combination. The thermoplastic resin other than the polyamic acid or the prepolyimine may, for example, be polyethylene, polypropylene, polyvinylidene fluoride, polyester 'polyacrylonitrile, polystyrene, polyamine, polyamidimide. , polystyrene and so on. These thermoplastic resins may be used singly or in combination of two or more kinds, but it is important to meet the use conditions such as the use temperature. Further, the resin composition for a closed enthalpy of the present invention can be formulated with various additives from the viewpoint of improving adhesion. Such an additive may, for example, be an antifoaming agent 'decane coupling agent, an inorganic or organic chelating agent, a pigment or the like. Moreover, the resin composition for a closed enthalpy of the present invention can be improved from

-22- &lt; S (18) (18)1351414 遷移性之觀點’宜離子性雜質的含量少。就離子性雜質而 言可舉例如氯離子等。此氯離子濃度相對於封閉塡充劑用 樹脂組成物’必須爲5ppm以下，宜爲不足3ppm，更宜爲 不足 1 ppm。 又，使本發明之封閉塡充劑用樹脂組成物熱硬化或加 熱熔融後進行再固化而成之接合層（含有聚醯亞胺）的彈 性率’宜爲10以上 3 500MPa以下，更宜爲10以上 3000MPa以下，尤宜爲50以上2800MPa以下，特宜爲50 以上1500MPa以下，最宜爲100以上〗〇〇〇MPa以下。 進而’使本發明之封閉塡充劑用樹脂組成物熱硬化或 加熱熔融後進行再硬化而成之接合層（含有聚醯亞胺）之 線膨脹係數宜爲300ppm/°C以下，更宜爲200ppm/°C以下， 尤宜爲150ppm/°C以下，最宜爲100ppm/°C以下。 若前述彈性率超過 3 5 00MPa，線膨脹係數超過 3 0 0ppm/°C，於構成倒裝晶片安裝物之材料間產生應力， 成爲龜裂或剝離的原因，有使耐遷移性降低之傾向。又， 彈性率高時，賦予半導體晶片之應力會增大，於半導體裝 置產生不佳，有產生翹曲而變形之傾向 進而，使本發明之封閉填充劑用樹脂組成物熱硬化或 加熱熔融後進行再硬化而成之接合層（熱硬化膜：含有聚 醯亞胺）之吸水率係成構成接合層之樹脂組成物硬化膜的 膜厚爲20 // m，若在25 °C浸漬於水24小時顯示，從絕緣 特性（耐遷移性）提昇之觀點，宜爲〇以上不足2%，更 宜爲〇以上不足1.5%，尤宜爲0以上不足0.5%。 -23- (19) (19)1351414 又，此吸水率λ (%)可依以下之式而算出。 λ {% )={(w-w〇)/w} X 100 (式中，WG爲浸漬於去離子水前之樹脂組成物硬化膜 的質量，W爲浸漬於去離子水後之樹脂組成物硬化膜（接 合層）之質量） 又，本發明之封閉塡充劑用樹脂組成物的熱硬化膜（ 接合層）係宜具有可跟隨可撓性配線板基板或防焊漆之耐 彎曲性。不具有彎曲性時，將可撓性配線板基板組入於裝 置時，彎曲時會從樹脂端部剝離，或產生龜裂，或降低耐 遷移性。 (倒裝晶片安裝法及倒裝晶片安裝物） 其次說明有關本發明之倒裝晶片之安裝法。圖1~4係 說明於配線電路基板上塗佈本發明之封閉塡充劑用樹脂組 成物，使半導體晶片及配線電路基板接合之倒裝晶片安裝 法的製程之槪略截面圖。又，各圖中，同一符號係表示相 同或相當部分。 如圖1所示般，於作爲配線電路基板的薄膜狀基材1 上面，係除了安裝半導體晶片之部分等外而形成銅配線2 ，於此銅配線2上之特定部分係實施錫或金等之金屬電鍍 3»此金屬電鍍3係可適宜使用鍚或金電鍍，但亦可爲其 他之金屬的電鍵，可同樣地使用。進一步，作爲接合部分 以外之圖型等的保護膜，係於銅配線2上形成耐熱性塗佈 材之防焊漆4。 -24 - (20) (20)1351414 其次，如圖2所示般，包覆安裝有如庇之薄膜狀基材 1的半導體晶片的安裝位置5，而塗佈本發明之封閉塡充 劑用樹脂組成物6。封閉塡充劑用樹脂組成物6係依照半 導體晶片與薄膜狀基材1之距離，半導體晶片的大小等而 可塗佈成所希望的厚度、形狀。或，亦可將封閉塡充劑用 樹脂組成物6滴下於安裝有薄膜狀基材1之半導體晶片的 安裝位置5，或如後述般，藉由貼黏薄片狀之封閉塡充劑 用樹脂組成物，可配置於特定的安裝位置5，此等之塗佈 ，滴下，貼黏的方法或條件並無特別限定。 所塗佈之封閉塡充劑用樹脂組成物6之厚度一般係依 存於配線之高度等，但約有50~70/zm。將本發明之封閉 塡充劑用樹脂組成物溶解於有機溶劑等而使用時，一般之 塗佈方法可舉例如旋塗法或印刷法，以前述塗佈法塗佈封 閉塡充劑用樹脂組成物溶液後，乾燥及熱硬化以形成封閉 塡充劑用樹脂組成物層。乾燥、硬化溫度亦依存於所使用 之溶劑，但一般爲徐緩地從約100°C左右上昇至3 00°C左右 之方法。 於半導體晶片1 〇中如圖3所示般，於其下面介由金 屬樁11而形成凸塊12。使形成凸塊12之半導體晶片10 的下面對向於形成電鍍金屬3之薄膜狀基材1的的上面， 一邊以特定溫度加熱一邊藉押壓裝置15而押壓此等之半 導體晶片1〇與薄膜狀基材1。此時，亦可施加超音波等而 接合，藉由如此之超音波接合而形成均一的封閉塡充劑用 樹脂組成物6的層，可抑制安裝狀態的參差不齊。 C % ) -25 - (21) (21)1351414 如以上般做法，用圖4所示般，可製造倒裝晶片之安 裝物20，其係接合半導體晶片1〇的凸塊12與薄膜狀基材 1的電鍍金屬3且使凸塊12與電鍍金屬3之接合部的附近 藉由使封閉塡充劑用樹脂組成物6熱硬化而構成之接合層 6 ’被塡充、封閉。 進一步，說明有關依照半導體晶片10與薄膜狀基材1 之距離、半導體晶片的大小等，而貼黏形成爲所希望的厚 度、形狀之薄片狀的封閉塡充劑用樹脂組成物之情形。圖 5〜圖7係說明於配線電路基板上貼黏薄片狀封閉塡充劑用 樹脂組成物而接合半導體晶片及配線電路基板之倒裝晶片 安裝法的製程之槪略截面圖。 首先，如圖5所示般，被覆薄膜狀基材1中之半導體 晶片的安裝位置5而貼黏薄片狀封閉塡充劑用樹脂組成物 (含有聚醯亞胺之樹脂組成物）6A。貼黏法可舉例如層合 法，製作任意之形狀的封閉塡充劑用樹脂組成物薄片，一 邊加溫至半導體晶片或配線電路基板，一邊以熱壓接形成 封閉塡充劑用樹脂組成物層。加熱溫度係宜爲5 0 °C〜1 6 0 °C ，更宜爲80°C〜130 °C。又，在圖5中，薄片狀封閉塡充劑 用樹脂組成物6A直接接著於防焊漆4，但在圖5中係圖 示一例者，故不限於圖示之例而含有各種之態樣。 然後，如圖6所示般，使形成凸塊1 2之半導體晶片 10的下面對向於形成電鍍金屬3之薄膜狀基材1的的上面 ，一邊以特定溫度加熱一邊藉押壓裝置15而押壓此等之 半導體晶片與薄膜狀基材1。此時’亦可施加超音波接 -26- (22) (22)1351414 合之優點，係與圖3之情形相同。 如以上般做法，用圖7所示般，可製造倒裝晶片之安 裝物20A，其係接合半導體晶片10的凸塊12與薄膜狀基 材1的電鍍金屬3且使凸塊12與電鍍金屬3之接合部的 附近藉由使薄片狀封閉塡充劑用樹脂組成物6A加熱熔融 後再進行硬化而構成之接合層6A’被封閉。 在本發明之倒裝晶片安裝法中，係使用於本發明之封 閉塡充劑用樹脂組成物的熱塑性樹脂，其安定性優，故於 半導體晶片或配線電路基板預先使封閉塡充劑用樹脂組成 物塗佈、滴下、貼黏後，於半導體晶片與配線電路基板之 加熱接合的放置時間無限制。又，不須於一般之熱硬化性 樹脂所需之接合後的後硬化，故可縮短步驟。 【實施方式】 (實施例） 其次，依實施例而說明本發明，但本發明係不限定於 此等之實施例。又，在以下之合成例中。聚醯胺酸之數目 平均分子量係依凝膠滲透色層分析（GPC )進行測定，依 使用標準聚苯乙烯之檢量線進行換算而求出。GPC之條件 如以下般。 泵浦：日立L-6000型[(股）日立製作所製] 檢測器：日立L-3 300型RI[(股）日立製作所製] 管柱：Gelpack GL-S3 00MDT-5 (計 2 根）（以上；日 立化成工業（股）製，商品名）-22- &lt; S (18) (18) 1351414 From the viewpoint of mobility, the content of the ionic impurities is small. Examples of the ionic impurities include chloride ions and the like. The chloride ion concentration must be 5 ppm or less, preferably less than 3 ppm, more preferably less than 1 ppm, relative to the resin composition for the closed hydrazine. Further, the elastic layer of the bonding layer (containing polyimine) which is obtained by thermally curing or heating and melting the resin composition for sealing the enthalpy of the present invention is preferably 10 or more and 3 500 MPa or less, more preferably 10 or more and 3000 MPa or less, particularly preferably 50 or more and 2800 MPa or less, particularly preferably 50 or more and 1500 MPa or less, and most preferably 100 or more and 〇〇〇 MPa or less. Further, the linear expansion coefficient of the bonding layer (containing polyimine) which is obtained by thermally curing or heating and melting the resin composition for a closed enthalpy of the present invention is preferably 300 ppm/° C. or less, more preferably 200 ppm / ° C or less, particularly preferably 150 ppm / ° C or less, and most preferably 100 ppm / ° C or less. When the elastic modulus exceeds 3,500 MPa and the coefficient of linear expansion exceeds 3,000 ppm/°C, stress is generated between the materials constituting the flip chip mounted article, which causes cracking or peeling, and tends to lower the migration resistance. Further, when the modulus of elasticity is high, the stress applied to the semiconductor wafer is increased, the semiconductor device is poorly formed, and warpage is caused to be deformed, and the resin composition for a sealing filler of the present invention is thermally cured or heated and melted. The water absorption ratio of the bonding layer (thermosetting film: containing polyimine) which is re-hardened is such that the film thickness of the cured resin film constituting the bonding layer is 20 // m, and if it is immersed in water at 25 ° C From the viewpoint of improvement in insulation properties (migration resistance), it is preferably less than 2%, more preferably less than 1.5%, and more preferably less than 0.5%. -23- (19) (19) 1351414 Further, the water absorption rate λ (%) can be calculated by the following formula. λ {% )={(ww〇)/w} X 100 (wherein WG is the mass of the cured film of the resin composition before being immersed in deionized water, and W is the cured film of the resin composition after being immersed in deionized water) (Quality of the bonding layer) Further, the thermosetting film (bonding layer) of the resin composition for a sealing agent of the present invention preferably has a bending resistance comparable to that of the flexible wiring board substrate or the solder resist. When the flexible wiring board substrate is incorporated in the device, the flexible wiring board substrate is peeled off from the resin end portion during the bending, or cracks are generated or the migration resistance is lowered. (Flip Chip Mounting Method and Flip Chip Mounting) Next, a method of mounting the flip chip according to the present invention will be described. Figs. 1 to 4 are schematic cross-sectional views showing a process of a flip chip mounting method in which a resin composition for a sealing agent of the present invention is applied to a printed circuit board and a semiconductor wafer and a printed circuit board are joined. In the drawings, the same reference numerals indicate the same or corresponding parts. As shown in FIG. 1, on the film-form substrate 1 as a printed circuit board, a copper wiring 2 is formed in addition to a portion where a semiconductor wafer is mounted, and a specific portion of the copper wiring 2 is tin or gold. Metal plating 3» This metal plating 3 series can be suitably used for ruthenium or gold plating, but it can also be used for other metal keys, and can be used in the same manner. Further, as the protective film of the pattern or the like other than the joint portion, the solder resist 4 of the heat-resistant coating material is formed on the copper wiring 2. -24 - (20) (20) 1351414 Next, as shown in Fig. 2, the mounting position 5 of the semiconductor wafer to which the film-like substrate 1 is covered is coated, and the resin for the sealing agent of the present invention is applied. Composition 6. The resin composition 6 for sealing the entangled material can be applied to a desired thickness and shape in accordance with the distance between the semiconductor wafer and the film-form substrate 1, the size of the semiconductor wafer, and the like. Alternatively, the resin composition for sealing the encapsulant 6 may be dropped onto the mounting position 5 of the semiconductor wafer on which the film-form substrate 1 is attached, or may be composed of a resin for sealing the flaky adhesive as described later. The material may be disposed at a specific mounting position 5, and the method or conditions for coating, dropping, and sticking are not particularly limited. The thickness of the resin composition 6 for the sealant to be applied is generally dependent on the height of the wiring, etc., but is about 50 to 70/zm. When the resin composition for a blocked enthalpy of the present invention is used in an organic solvent or the like, the general coating method may be, for example, a spin coating method or a printing method, and the coating method may be used to apply a resin for sealing the chelating agent. After the solution, it is dried and thermally hardened to form a resin composition layer for sealing the lubricant. The drying and hardening temperature also depend on the solvent to be used, but generally it is a method of slowly increasing from about 100 ° C to about 300 ° C. In the semiconductor wafer 1 as shown in Fig. 3, bumps 12 are formed underneath the metal piles 11. The lower surface of the semiconductor wafer 10 on which the bumps 12 are formed is opposed to the upper surface of the film-form substrate 1 on which the plating metal 3 is formed, and the semiconductor wafer 1 is pressed by the pressing device 15 while being heated at a specific temperature. With film-like substrate 1. In this case, ultrasonic waves or the like may be applied and joined, and a layer of the resin composition 6 for sealing the lubricant is formed by such ultrasonic bonding, thereby suppressing unevenness in the mounted state. C % ) -25 - (21) (21) 1351414 As described above, as shown in Fig. 4, a flip chip mount 20 can be fabricated which bonds the bump 12 of the semiconductor wafer 1 and the film-like base. The plating metal 3 of the material 1 and the vicinity of the joint portion between the bump 12 and the plating metal 3 are filled and sealed by the bonding layer 6' which is formed by thermally curing the resin composition 6 for sealing the lubricant. Further, a case will be described in which a resin composition for a sealing agent which is formed into a sheet having a desired thickness and shape in accordance with the distance between the semiconductor wafer 10 and the film-form substrate 1 and the size of the semiconductor wafer is adhered. Fig. 5 to Fig. 7 are schematic cross-sectional views showing a process of a flip chip mounting method in which a semiconductor wafer and a printed circuit board are bonded to a printed circuit board by a sheet-like resin composition. First, as shown in Fig. 5, the semiconductor wafer of the film-form substrate 1 is attached to the mounting position 5 of the film-form substrate 1 to adhere the sheet-like resin composition (resin composition containing polyimine) 6A. In the adhesive bonding method, for example, a resin composition sheet for a closed enthalpy of an arbitrary shape is produced, and a resin composition layer for sealing a chelating agent is formed by thermocompression bonding while heating to a semiconductor wafer or a printed circuit board. . The heating temperature is preferably from 50 ° C to 1 60 ° C, more preferably from 80 ° C to 130 ° C. In addition, in FIG. 5, the resin composition 6A for a sheet-like closed entangled material is directly attached to the solder resist 4, but is shown as an example in FIG. 5, and therefore, it is not limited to the illustrated example and contains various aspects. . Then, as shown in FIG. 6, the lower surface of the semiconductor wafer 10 on which the bumps 1 2 are formed is opposed to the upper surface of the film-form substrate 1 on which the plated metal 3 is formed, and the pressing device 15 is heated while heating at a specific temperature. The semiconductor wafer and the film-form substrate 1 are pressed. At this time, the advantages of ultrasonic -26-(22) (22) 1351414 can also be applied, which is the same as in the case of FIG. As described above, as shown in FIG. 7, a flip chip mount 20A can be fabricated which bonds the bumps 12 of the semiconductor wafer 10 with the plated metal 3 of the film-like substrate 1 and causes the bumps 12 and the plated metal The bonding layer 6A' which is formed by heating and melting the resin composition 6A for sheet-like sealing agent in the vicinity of the joint portion of 3 is sealed. In the flip-chip mounting method of the present invention, the thermoplastic resin used in the resin composition for sealing a hydrating agent of the present invention has excellent stability, so that the resin for sealing the chelating agent is previously fixed on the semiconductor wafer or the printed circuit board. After the composition is applied, dropped, and adhered, the time for placing the semiconductor wafer on the printed circuit board is not limited. Further, since the post-bonding post-hardening required for the general thermosetting resin is not required, the step can be shortened. [Embodiment] (Examples) Next, the present invention will be described by way of examples, but the present invention is not limited to the examples. Further, in the following synthesis examples. The number of polyaminic acid The average molecular weight was measured by gel permeation chromatography (GPC) and was determined by conversion using a standard polystyrene calibration line. The conditions of GPC are as follows. Pump: Hitachi L-6000 [manufactured by Hitachi, Ltd.] Detector: Hitachi L-3 300 RI [made by Hitachi, Ltd.] Column: Gelpack GL-S3 00MDT-5 (2 pieces) Above; Hitachi Chemical Industry Co., Ltd., trade name)

C S -27- (24) (24)1351414 。添加中加熱，反應溫度從20°C上昇至35°C。攪拌至所添 加之四羧酸二酐完全地溶解，昇溫至70°C，進一步加熱攪 拌3小時。所得到之封閉塡充劑用樹脂組成物用的前驅體 (聚醯胺酸）之數目平均分子量爲61000。 使實施例1、實施例2所得到的封閉塡充劑用樹脂組 成物用之前驅體（聚醯胺酸）分別塗佈於陶瓷板上，以 1 0 0 °C x 1小時、2 0 0 °C X 3 0分、2 5 0 °C X 1小時乾燥，硬化， 於溫水中剝離，而得到封閉塡充劑用樹脂組成物之薄膜。 (實施例3 ) 於具備攪拌機、溫度計、氮氣導入管之300ml的四口 分離式燒瓶中，加入二苯甲酮四羧酸二酐（BTDA ) 29.00g(0.0 9mol)作爲四羧酸二酐、作爲溶劑之Ν·甲基-2-吡咯烷酮71.7g而在60°C下攪拌15分鐘。然後一邊攪 拌一邊花1 5分鐘添加作爲二胺之Cognis Japan公司製之 「Versamine 551 (商品名）」49_96g ( 〇.〇9mol)。添加 終了後，昇溫至40°C，進行攪拌5小時，得到聚醯胺酸之 N -甲基-2 -吡咯烷酮溶液。所得到之溶液中的固形分係質 量52%，此封閉塡充劑用樹脂組成物用的前驅體（聚醯胺 酸）之數目平均分子量爲17000。 (實施例4 )C S -27- (24) (24) 1351414. During the addition, the reaction temperature was raised from 20 ° C to 35 ° C. The mixture was stirred until the added tetracarboxylic dianhydride was completely dissolved, and the temperature was raised to 70 ° C, and further stirred for 3 hours. The number average molecular weight of the precursor (polyglycine) used for the resin composition for a blocked entangled agent was 61,000. The resin composition for a closed enthalpy obtained in Example 1 and Example 2 was coated on a ceramic plate with a precursor (polyglycine) at a temperature of 1 0 0 ° C for 1 hour, 2 0 0. °CX 3 0 minutes, 2 50 ° CX 1 hour drying, hardening, peeling off in warm water, and obtaining a film of a resin composition for sealing the enthalpy. (Example 3) In a 300-ml four-necked flask equipped with a stirrer, a thermometer, and a nitrogen gas introduction tube, benzophenone tetracarboxylic dianhydride (BTDA) 29.00 g (0.09 mol) was added as a tetracarboxylic dianhydride. 71.7 g of hydrazine-methyl-2-pyrrolidone as a solvent was stirred at 60 ° C for 15 minutes. Then, "Versamine 551 (trade name)" 49_96g (〇.〇9 mol) manufactured by Cognis Japan Co., Ltd. as a diamine was added for 15 minutes while stirring. After the end of the addition, the temperature was raised to 40 ° C, and the mixture was stirred for 5 hours to obtain a solution of poly-proline acid N-methyl-2-pyrrolidone. The solid content in the obtained solution was 52%, and the number average molecular weight of the precursor (polyglycolic acid) used for the resin composition for blocking the enthalpy was 17,000. (Example 4)

於具備攪拌機、溫度計、氮氣導入管之3 00ml的四口 分離式燒瓶中，加入十亞甲基雙偏苯三甲酸二酐（DBTA -29- (25) (25)1351414 )41.8g(0.08mol)作爲四羧酸二酐、作爲溶劑之N -甲 基-2-吡咯烷酮133g而在60 °C下攪拌15分鐘。然後一邊 擅拌一邊花30分鐘添加作爲二胺之Cognis Japan公司製 之「Versamine 551 (商品名）」44g(0_08mol)。添加終 了後’昇溫至60°C，進行攪拌1小時，得到聚醯胺酸之 N-甲基-2-吡咯烷酮溶液。所得到之溶液中的固形分係質 量40%，此封閉塡充劑用樹脂組成物用的前驅體（聚醯胺 酸）之數目平均分子量爲31000。 使實施例3及實施例4所得到的封閉塡充劑用樹脂組 成物用之前驅體（聚醯胺酸）分別塗佈於陶瓷板上，以 100°C xl小時、180°Cxl小時乾燥，硬化.，於溫水中進行 剝離，而得到封閉塡充劑用樹脂組成物之薄膜。 (比較例1 ) 使苯乙烯-丁二烯系橡膠熱塑性樹脂組成物（日立化 成聚合物公司製，商品名「Hibon9610」）以180°c熔融（ 黏度3.5Pa.s)，再塗佈於陶瓷板上，與前述實施例同樣 做法而得到薄膜》 (比較例2 ) 將環氧基系熱硬化性液狀樹脂組成物封閉塡充劑（曰 立化成工業公司製，商品名「RC281C」塗佈於陶瓷板上 ’以1 5 0 °C硬化2小時，得到薄膜。 又，實施例中之抗拉彈性率、耐遷移性、吸水率、離 -30- (26) 1351414 子雜質、密著性的測定及評估如以下般實施。結果表示於 ' (表1 )中。 (性能評估） 使用在前述各實施例及各比較例中所得到的薄膜，評 估下述內容之抗拉彈性率、線膨脹係數 '耐彎曲性。 φ (抗拉彈性率） 樹脂組成物之抗拉彈性率係使樹脂形成約50ym之薄 膜狀後，切出成寬lcm、長4cm之短柵狀的試驗片，使用 島津裝作所製 Autograph (商品名「AGF-5 KN」），以溫 度23 °C、卡盤間20mm、抗拉強度5mm/分之條件測定。結 果表示於下述（表1)中。 [線膨脹係數] φ 樹脂組成物之線膨脹係數係使樹脂形成約5 0 // m之薄 膜狀後，切出成寬4mm、長20cm之短柵狀的試驗片，使 用 Rigaku 公司製 Thermoplus (商品名「TMA8310」）， 以卡盤間距離l〇mm、昇溫速度](TC/分、加重3g測定。 結果表示於（表1 )中。 [耐彎曲性] 樹脂組成物之耐彎曲性係觀察將遷移評估後之試驗片 彎曲成1 8 0度時之狀態而進行評估。使未龜裂者爲◦，已 -31 - (27) 1351414 龜裂者作爲X，結果表示於（表1)。Add 10-methylidene trimellitic dianhydride (DBTA -29- (25) (25) 1351414) 41.8 g (0.08 mol) to a 300-neck separable flask equipped with a stirrer, a thermometer, and a nitrogen inlet tube. As a tetracarboxylic dianhydride and 133 g of N-methyl-2-pyrrolidone as a solvent, it was stirred at 60 ° C for 15 minutes. Then, 44 g (0_08 mol) of "Versamine 551 (trade name)" manufactured by Cognis Japan Co., Ltd. as a diamine was added for 30 minutes while mixing. After the end of the addition, the temperature was raised to 60 ° C, and the mixture was stirred for 1 hour to obtain a solution of poly-proline acid N-methyl-2-pyrrolidone. The solid content in the obtained solution was 40%, and the number average molecular weight of the precursor (polyglycolic acid) used for the resin composition for blocking the enthalpy was 31,000. The resin composition for a closed enthalpy obtained in Example 3 and Example 4 was applied to a ceramic plate with a precursor (polyglycine), and dried at 100 ° C for 1 hour and at 180 ° C for 1 hour. It is hardened and peeled off in warm water to obtain a film of a resin composition for sealing the enthalpy. (Comparative Example 1) A styrene-butadiene rubber thermoplastic resin composition (manufactured by Hitachi Chemical Co., Ltd., trade name "Hibon 9610") was melted at 180 ° C (viscosity: 3.5 Pa.s) and applied to ceramics. On the plate, a film was obtained in the same manner as in the above-mentioned Example (Comparative Example 2) The epoxy group-based thermosetting liquid resin composition was sealed with a chelating agent (manufactured by Toray Chemical Industry Co., Ltd., trade name "RC281C"). The film was hardened at 150 ° C for 2 hours on a ceramic plate to obtain a film. Further, the tensile modulus, migration resistance, water absorption, -30-(26) 1351414 impurity, and adhesion were observed in the examples. The measurement and evaluation were carried out as follows. The results are shown in '(Table 1). (Performance evaluation) Using the films obtained in each of the foregoing Examples and Comparative Examples, the tensile modulus and the line of the following were evaluated. Expansion coefficient 'bending resistance. φ (tensile modulus) The tensile modulus of the resin composition is such that the resin is formed into a film shape of about 50 μm, and then a test piece having a short grid shape of 1 cm in width and 4 cm in length is cut out. Autograph (trade name "AGF-5 KN") made by Shimadzu The measurement was carried out under the conditions of a temperature of 23 ° C, a chuck of 20 mm, and a tensile strength of 5 mm/min. The results are shown in the following (Table 1). [Linear expansion coefficient] φ The coefficient of linear expansion of the resin composition is such that the resin is formed. After a film of 5 0 // m, a test piece having a short grid shape of 4 mm in width and 20 cm in length was cut out, and a Thermoplus (trade name "TMA8310") manufactured by Rigaku Co., Ltd. was used, and the distance between the chucks was l〇mm, and the temperature was raised. (TC/min, weighting 3 g measurement. The results are shown in (Table 1). [Bending resistance] The bending resistance of the resin composition was observed by bending the test piece after the migration evaluation to a state of 180 degrees. The evaluation was made so that the uncracked person was ◦, and the -31 - (27) 1351414 cracker was regarded as X, and the result was expressed in (Table 1).

[離子性雜質] 各例之樹脂組成物的離子性雜質含量，係於充分洗淨 之耐壓容器中置入樹脂組成物約2g、純水約18g，以 121°C/100%RH之環境萃取20小時，使用陰離子色譜（ Dionex公司製；商品名「DX-120」，管柱 AS12A)而測 定。結果表示於（表1)中。 (於可撓性配線板基材之貼黏性） 於可撓性配線板（2層澆鑄材，30/zm節距、鍍錫） 中，預先塗佈各例之封閉塡充劑用樹脂組成物的1.5mm xl.5mm的半導體晶片，以450°C/lMPa熱壓接5秒，觀察 其樣子’使未產生孔穴者作爲〇，使產生孔穴者作爲 將結果表示於（表1)中。 [翹曲之評估] 爲於直徑20cm、厚約420从m之Si晶圓上形成厚約 100//Π1之膜’配置樹脂，以特定之溫度進行硬化，貼黏 。押住晶圓端部時’铷定逆端部之***情形作爲基材之翹 曲。以基材之翹曲爲〇.5mm以下者作爲〇，以大於〇 5mm 者爲x。結果表不於（袠中》 [耐遷移性] -32- (28) (28)1351414 於前述各例得到之樹脂組成物的耐遷移性，係使用圖 8所示之耐遷移性評估用基板而進行評估。亦即，如圖8 所示般，於可翹性基板（厚度25//m之聚醯亞胺基材1上 形成厚10#m之鍍錫銅配線2的基板、配線30/zm節距 )塗佈防焊漆4 (商品名：SN-9000，日立化成工業股份 公司製），進一步於配線表面塗佈於前述各例所得到之樹 脂組成物6而製作試樣，切出成長度30mm、幅5mm而形 成耐遷移性評估用基板30。又，圖8中，符號31係表示 未塗佈防焊漆4之防焊漆未塗佈部分。有關所得到之耐遷 移性評估用基板3 0，使用離子遷移測試器（商品名： MIG-8600 &gt; IMV 公司製），以 110°C/85%RH/60V 之條件 評估耐遷移性。又，將耐遷移性之評估結果表示圖9中。 (表1 ) 項目 實施例1 實施例2 實施例3 實施例4 比較例1 比較例2 彈性率(MPa) 2500 2600 900 150 10 3600 線膨脹係數 (ppm/°C) 70 60 70 60 250 70 耐彎曲性 〇 〇 〇 〇 〇 X 貼黏性 〇 〇 〇 〇 X X 樹脂分之5%重量 減少溫度 460 500 410 380 300 280 耐遷移性 〇 〇 〇 〇 X X 翹曲 X X 〇 〇 〇 X 氯離子濃度(ppm) 0.5 0.8 1.8 1.8 13 1.8 抗拉彈性率及線膨脹係數之評估結果，係含有實施例 1〜4之本案的聚醯胺酸之樹脂組成物，相較於比較例2之 (29) 1351414 環氧基系熱硬化性樹脂組成物，顯示低彈性。 ' 在耐彎曲性評估之結果中，相較於比較例2之環氧基 -* 系熱硬化性樹脂組成物，彎曲時容易龜裂》 離子性雜質（氯離子）量的估估中，相較於實施例 1〜4之樹脂組成物，比較例1之離子性雜質係很多。 在可撓性配線板基材之貼黏性中，比較例1、2均耐 熱性低，樹脂會發泡，產生孔洞。 φ 有關耐遷移性，被認爲係成爲前述所評估之物性影響 耐遷移性之因素。亦即實施例1〜4係前述之特性優，故， 如圖1所示般，顯示良好之耐遷移性。比較例1因離子性 雜質高，比較例2係於可撓性配線基板或周邊材之跟隨性 低（特性偏離很多），故耐遷移性低。 又，翹曲評估結果中，實施例3及4係相較於實施例 1及2，抗拉彈性率低，故低翹曲性優。 φ [產業上之利用可能性] 若依本發明之封閉塡充劑用樹脂組成物，在預先配置 封閉塡充劑之可撓性配線基板的倒裝晶片安裝法中，塗佈 後可保持適度的厚度，加熱接合時，具有適度之流動性而 可無間隙地塡充半導體晶片與可撓性配線基板的間隙’無 因接合時之加熱所產生的分解或發泡，以適當的速度熔解 ，固化，固化後之電氣絕緣性高，不具有對於可撓性配線 板基材上的電極之腐蝕原因，而可提供在常溫下之保管安 定性優的封閉塡充劑。 C S ) -34- (30) (30)^51414 [圖式簡單說明】 圖1係說明塗佈封閉塡充劑用樹脂組成物之倒裝晶片 $裝法的製程之半導體晶片及配線電路基板之槪略截面圖[Ionic Impurity] The ionic impurity content of the resin composition of each example is about 2 g of a resin composition and about 18 g of pure water in a pressure-resistant container which is sufficiently washed, and is in an environment of 121 ° C / 100% RH. The mixture was extracted for 20 hours, and measured by anion chromatography (manufactured by Dionex Co., Ltd.; trade name "DX-120", column AS12A). The results are shown in (Table 1). (Adhesiveness to a flexible wiring board substrate) In a flexible wiring board (two-layer casting material, 30/zm pitch, tin plating), a resin composition for a closed enthalpy of each example is applied in advance. A 1.5 mm x 1.5 mm semiconductor wafer of 1.5 mm x 1.5 mm was heat-pressed at 450 ° C / l MPa for 5 seconds, and it was observed that the person who did not generate the void was used as the enthalpy, and the person who produced the void was shown as the result (Table 1). [Evaluation of Warpage] A resin having a thickness of about 20 cm and a thickness of about 420 from a Si wafer of m of about 100//Π1 was placed, and the resin was cured at a specific temperature and adhered. When the end of the wafer is held, the ridge of the opposite end portion is warped as a substrate. The warpage of the substrate is 〇.5mm or less as 〇, and the 〇5mm is x. The results are shown in (袠中中) [Resistance to migration] -32- (28) (28) 1351414 The migration resistance of the resin composition obtained in each of the above examples is the substrate for evaluation of migration resistance shown in Fig. 8. Further, as shown in FIG. 8, a substrate and wiring 30 of a tinned copper wiring 2 having a thickness of 10 #m were formed on a warp-precision substrate (polyimide substrate 1 having a thickness of 25/m). /zm pitch) The solder resist 4 (trade name: SN-9000, manufactured by Hitachi Chemical Co., Ltd.) was applied, and the resin composition 6 obtained in each of the above examples was further applied to the wiring surface to prepare a sample. The substrate 30 having a length of 30 mm and a width of 5 mm was formed to form a migration resistance evaluation substrate 30. In Fig. 8, reference numeral 31 denotes an uncoated portion of the solder resist which is not coated with the solder resist 4. The obtained migration resistance is obtained. The evaluation substrate 30 was evaluated for migration resistance at 110 ° C / 85% RH / 60 V using an ion mobility tester (trade name: MIG-8600 &gt; IMV). Further, evaluation of migration resistance was carried out. The results are shown in Fig. 9. (Table 1) Item Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Comparative Example 2 Elasticity (MPa) 2500 2600 900 150 10 3600 Linear expansion coefficient (ppm/°C) 70 60 70 60 250 70 Flexibility 〇〇〇〇〇X Adhesive 〇〇〇〇XX Resin 5% Weight reduction Temperature 460 500 410 380 300 280 migration resistance 〇〇〇〇 XX warp XX 〇〇〇 X chloride ion concentration (ppm) 0.5 0.8 1.8 1.8 13 1.8 Evaluation results of tensile modulus and coefficient of linear expansion, which are the cases of Examples 1 to 4 The resin composition of the poly-proline showed a low elasticity compared to the (29) 1351414 epoxy-based thermosetting resin composition of Comparative Example 2. 'In the results of the evaluation of the bending resistance, compared with the comparative example 2 epoxy group-* is a thermosetting resin composition, and is easily cracked during bending. In the estimation of the amount of ionic impurities (chloride ions), Comparative Example 1 is compared with the resin compositions of Examples 1 to 4. In the adhesion of the flexible wiring board substrate, in Comparative Examples 1 and 2, the heat resistance was low, and the resin foamed to cause voids. φ The migration resistance was considered to be The physical properties assessed in the foregoing affect the migration resistance factor. Examples 1 to 4 are excellent in the above-described characteristics, and therefore exhibit good migration resistance as shown in Fig. 1. In Comparative Example 1, the ionic impurities were high, and Comparative Example 2 was followed by the flexible wiring substrate or the peripheral material. Since the properties are low (the characteristics are deviated too much), the migration resistance is low. Further, in the results of the warpage evaluation, in Examples 3 and 4, the tensile modulus is lower than that in Examples 1 and 2, so that the low warpage property is excellent. φ [Industrial Applicability] The resin composition for a closed enthalpy according to the present invention can be kept moderate after application in a flip chip mounting method in which a flexible wiring board for sealing a chelating agent is placed in advance When the thickness is heated and joined, the gap between the semiconductor wafer and the flexible wiring substrate can be filled without gaps, and there is no decomposition or foaming due to heating at the time of bonding, and melting at an appropriate speed. It is cured and has high electrical insulation after curing, and does not have a cause of corrosion to the electrode on the flexible wiring board substrate, and can provide a closed enthalpy which is excellent in storage stability at normal temperature. CS) -34- (30) (30)^51414 [Simplified description of the drawings] Fig. 1 is a view showing a semiconductor wafer and a printed circuit board of a process for applying a flip-chip wafer method for sealing a resin composition for a chelating agent. Sketch diagram

Q 圖2係說明塗佈封閉塡充劑用樹脂組成物之倒裝晶片 安裝法的製程之半導體晶片及配線電路基板之槪略截面圖 〇 圖3係說明塗佈封閉塡充劑用樹脂組成物之倒裝晶片 安裝法的製程之半導體晶片及配線電路基板之槪略截面圖 圖4係說明塗佈封閉塡充劑用樹脂組成物之倒裝晶片 安裝法的製程之半導體晶片及配線電路基板之槪略截面圖 〇 圖5係說明貼黏薄片狀封閉塡充劑用樹脂組成物之倒 裝晶片安裝法的製程之半導體晶片及配線電路基板的槪略 截面圖。 圖6係說明貼黏薄片狀封閉塡充劑用樹脂組成物之倒 裝晶片安裝法的製程之半導體晶片及配線電路基板的槪略 截面圖。 圖7係說明貼黏薄片狀封閉塡充劑用樹脂組成物之倒 裝晶片安裝法的製程之半導體晶片及配線電路基板的槪略 截面圖。 圖8係本發明之實施例中的耐遷移性評估用基板的槪 -35- (31) (31)1351414 略平面圖。 圖9係表示在實施例及比較例之各例所得到的樹脂組 成物之耐遷移性的曲線圖。 【主要元件之符號說明】 1 :薄膜狀基材 2 :銅配線 3 :電鍍金屬 4 :防焊漆 5 :半導體晶片的安裝位置 6 :封閉塡充劑用樹脂組成物 6A :薄片狀封閉塡充劑用樹脂組成物 6’、6A’ ：接合層 1 0 :半導體晶片 1 1 :金屬樁 12 :凸塊 15 :押壓裝置 20，20A :倒裝晶片之安裝物 3 0 :耐遷移性評估用基板 3 1 :防焊漆未塗佈部分。 -36-FIG. 2 is a schematic cross-sectional view showing a semiconductor wafer and a printed circuit board in a process of a flip chip mounting method for coating a resin composition for sealing a chelating agent, and FIG. 3 is a view showing a resin composition for coating a closed enthalpy. A schematic cross-sectional view of a semiconductor wafer and a printed circuit board in the process of flip chip mounting, FIG. 4 is a view showing a semiconductor wafer and a printed circuit board in a process of applying a flip chip mounting method for sealing a resin composition for a retort. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 5 is a schematic cross-sectional view showing a semiconductor wafer and a printed circuit board in a process of flip chip mounting of a resin composition for adhering a sheet-like sealing agent. Fig. 6 is a schematic cross-sectional view showing a semiconductor wafer and a printed circuit board in a process of a flip chip mounting method for adhering a resin composition for a sheet-like sealing agent. Fig. 7 is a schematic cross-sectional view showing a semiconductor wafer and a printed circuit board in a process of a flip chip mounting method for adhering a resin composition for a sheet-like sealing agent. Fig. 8 is a schematic plan view of 槪 -35-(31) (31) 1351414 of the substrate for migration resistance evaluation in the embodiment of the present invention. Fig. 9 is a graph showing the migration resistance of the resin composition obtained in each of the examples and the comparative examples. [Description of Symbols of Main Components] 1 : Film-like substrate 2 : Copper wiring 3 : Plating metal 4 : Solder resist 5 : Mounting position of semiconductor wafer 6 : Resin composition for closed crucible 6A : Flake-shaped closed charging Resin composition 6', 6A': bonding layer 10: semiconductor wafer 1 1 : metal post 12: bump 15: pressing device 20, 20A: flip chip mounting 30: evaluation of migration resistance Substrate 3 1 : Uncoated portion of solder resist. -36-

Claims (1)

1351414 公告本 100. b. - 9 年月曰修正本 第0961 12933號專利申請案中文申請專利範圍修正本 民國100年6月9曰修正 1. 一種封閉塡充劑，係半導體晶片與可撓性配線基 板之間隙的接著封閉塡充劑，其特徵在於由下述通式（i )所表示之聚醯胺酸（式（1)中，Ar1表示4價之有機基 ’ Ar1 2爲2價之有機基，Ar1及/或Ar1含有碳數5〜20之1351414 Announcement 100. b. - 9-year 曰 曰 本 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 096 The encapsulating agent in the gap of the wiring substrate is characterized by a polyaminic acid represented by the following formula (i) (in the formula (1), Ar1 represents a tetravalent organic group 'Ar1 2 is a divalent group Organic group, Ar1 and/or Ar1 contains carbon number 5~20 十、申請專利範圍 伸烷基鏈，1爲1以上之整數）所成 【化1】X. The scope of application for patents is extended to an alkyl chain, and 1 is an integer of 1 or more. 0 0 II II /c\„ /c\ —NH Ar1 HN—Ar2 HOOC 'COOH0 0 II II /c\„ /c\ —NH Ar1 HN—Ar2 HOOC 'COOH ⑴ S 1 .—種倒裝晶片之安裝法’其特徵在於：於半導體晶 片與可撓性配線基板之至少一者，預先塗佈如申請專利範 圍第1項之封閉塡充劑，硬化後，加熱接合該半導體晶片 與可撓性配線基板。 2 ·如申請專利範圍第1項之倒裝晶片之安裝法，其 中該加熱接合爲該半導體晶片之金凸塊（bump )與該配線 電路基板之配線的鎪錫之金屬共晶，或該半導體晶片之金 凸塊與該配線電路基板之配線的鏡金之接合。 4. 一種倒裝晶片安裝物，其特徵在於：藉由使如申請 專利範圍第1項之封閉塡充劑熱硬化而構成之接合層而塡 充半導體晶片與可撓性配線基板之間隙。(1) S1. A method of mounting a flip chip, characterized in that at least one of a semiconductor wafer and a flexible wiring substrate is preliminarily coated with a sealing agent as in claim 1 of the patent application, and after hardening, The semiconductor wafer and the flexible wiring substrate are thermally bonded. [2] The flip chip mounting method of claim 1, wherein the heating bonding is a metal bump of the semiconductor wafer and a metal of germanium of the wiring of the wiring circuit substrate, or the semiconductor The gold bumps of the wafer are bonded to the mirror gold of the wiring of the printed circuit board. A flip chip mounted article characterized in that a gap between a semiconductor wafer and a flexible wiring substrate is filled by bonding a bonding layer formed by thermally curing a sealing agent according to claim 1 of the patent application.
TW096112933A 2006-04-12 2007-04-12 Resin composition for encapsulating filler, method of flip chip mounting with the same, and product of flip chip mounting TW200804463A (en)

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