CN104238264A - Solution-assisted soft imprinting method - Google Patents
Solution-assisted soft imprinting method Download PDFInfo
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- CN104238264A CN104238264A CN201410459137.3A CN201410459137A CN104238264A CN 104238264 A CN104238264 A CN 104238264A CN 201410459137 A CN201410459137 A CN 201410459137A CN 104238264 A CN104238264 A CN 104238264A
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Abstract
The invention discloses a solution auxiliary soft imprinting method. The method comprises the following steps: manufacturing a soft template provided with a first material with a microstructure on the surface, preparing an etching resist and an organic solvent into a solution, wherein the etching resist cannot be absorbed by the first material and the organic solvent can be absorbed by the first material; providing a substrate, and dropwise adding the solution on the substrate; then arranging the soft template on the substrate and the solution drop so as to enable the soft template to sufficiently contact with the substrate through the solution drop; removing the soft template after the organic solvent is completely absorbed by the soft template with the first material and the etching resist is cured to be as the etching resist layer so as to obtain the substrate loaded with an etching resist layer, wherein the surface of the etching resist layer is provided with a microstructure opposite to that of the soft template; etching or carrying out sediment processing on the substrate by using an etching resist structure layer as a mask layer. The solution-assisted soft imprinting method disclosed by the embodiment of the invention has the advantages of no residual glue, large processing area, and simplicity and easiness in implementation.
Description
Technical field
The present invention relates to micro-processing technology field, be specifically related to a kind of solution and assist soft impression method.
Background technology
Nanometer embossing is proposed in nineteen ninety-five by people such as Chou, this technology can at higher temperature and larger contact, figure in hard template (silicon or quartz) is imprinted directly on resist, then by etch or the method such as deposition completes Graphic transitions.The restriction of diffraction in this technological breakthrough conventional lithography, can the pattern of micro-, the nanoscale of large-area manufacturing.But nanometer embossing is also faced with several large challenge, as: expensive hard template is easily damaged in moulding process, to substrate surface flat degree require high (small projection can cause large area defect), have after impression in uneven thickness and be difficult to remove cull.
In order to solve the problems of nano impression, Whitesides etc. propose soft stamping technique, and this technology is avoided using the hard template of rapid wear and adopting the soft template of not rapid wear to impress.Based on the thought of soft template, multiple soft stamping technique is proposed successively, wherein applies and has micro-contact printing, solvent auxiliary multiple mould technology and capillary force casting process etc. more widely.Micro-contact printing adopts the soft template speckling with particular solution to make self assembled monolayer as mask on golden film surface, and then acid gilding film carries out Graphic transitions; But self assembled monolayer instability very easily spreads, cause processing restive and machining precision is not high.Solvent is assisted multiple mould technology to utilize organic solvent to liquefy and is spin-coated on the resist layer of substrate surface, and organic solvent siphons away by recycling soft template, makes the pattern in soft template be copied on resist; The method is effective to multiple resist and organic solvent, and working (machining) efficiency is high, is processed with cull, although can remove cull by reactive ion etching, but when cull is in uneven thickness, except glue weak effect.Capillary force assists casting process to utilize the capillary force between the chamber wall of the cavity that in liquid resist and soft template, microstructure and substrate surround to impel resist cavity filling; The product that this technology obtains does not have cull, can directly carry out etching or depositing, but this technology is only effective for the low-down one-component resist of viscosity at present, and is difficult to large area processing and fabricating.
No matter be adopt the nanometer embossing of hard template or adopt the soft stamping technique of soft template, how to remove uneven cull be its faced by one of main challenge, and existing several little without cull method for stamping working (finishing) area, technical difficulty is large, is difficult to large-scale application.
Summary of the invention
The present invention is intended to solve impression at least to a certain extent the technical matterss such as cull, working (finishing) area are little.For this reason, the object of the invention is to propose a kind ofly assist soft impression method without cull, solution that working (finishing) area is large.
In view of this, the solution according to the embodiment of the present invention assists soft impression method, can comprise the following steps: make the soft template that surface has the first material of microstructure; By resist and organic solvent wiring solution-forming, wherein, resist can not be absorbed by the first material, and organic solvent can be absorbed by the first material; Substrate is provided, and solution is added drop-wise on substrate; Soft template is placed on substrate and solution droplets, is fully contacted by solution droplets with substrate to make soft template; After organic solvent is all absorbed by the soft template of the first material and resist is solidified into resist layer, remove soft template, obtain the substrate being loaded with resist layer, wherein, resist layer surface has the microstructure contrary with soft template; With resist structure layer for mask layer, substrate is etched or deposition process.
Soft impression method is assisted to have without the advantage such as cull, working (finishing) area be large, simple by the solution of the embodiment of the present invention.
In addition, solution according to the above embodiment of the present invention assists soft impression method, also can have following additional technical characteristic:
In one embodiment of the invention, the first material is dimethyl silicone polymer.
In one embodiment of the invention, resist is polymethylmethacrylate.
In one embodiment of the invention, organic solvent is acetone.
Additional aspect of the present invention and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
Fig. 1 is the process flow diagram that the solution of the embodiment of the present invention assists soft impression method.
Fig. 2 is the specific embodiment schematic diagram that the solution of the embodiment of the present invention assists soft impression method.
Fig. 3 is the substrate surface Microstructure Optics microphotograph that embodiment 1 finally obtains.
Fig. 4 is the substrate surface microstructure electron scanning micrograph that embodiment 2 finally obtains.
Embodiment
Embodiments of the invention are described below in detail.In the description of this instructions, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, to the schematic representation of above-mentioned term not must for be identical embodiment or example.And the specific features of description, structure, material or feature can combine in one or more embodiment in office or example in an appropriate manner.In addition, when not conflicting, the feature of the different embodiment described in this instructions or example and different embodiment or example can carry out combining and combining by those skilled in the art.
Solution assists soft impression method according to an embodiment of the invention, in order to remove the insulation course bottom hole.As shown in Figure 1, the solution of this embodiment assists soft impression method to comprise the following steps:
A. the soft template that surface has the first material of microstructure is made.
Alternatively, the first material is dimethyl silicone polymer (polydimethylsiloxane, PDMS) etc. material.PDMS material can produce the good soft template of pliability.Those skilled in the art can select the production method of soft template as required flexibly.
B. by resist and organic solvent wiring solution-forming, wherein, resist can not be absorbed by the first material, and organic solvent can be absorbed by the first material.
Alternatively, resist is polymethylmethacrylate (Polymethylmethacrylate, PMMA) etc. material, and organic solvent is acetone etc. material.Require that resist can by organic solvent dissolution.
C. provide substrate, and solution is added drop-wise on substrate.
Alternatively, substrate can be the common substrate of piezoid, silicon chip etc., and its surface can also be optional as required and not necessarily make relevant pre-service.This is those skilled in the art's known knowledge, does not repeat herein.
D. soft template is placed on substrate and solution, is fully contacted by solution with substrate to make soft template.
E., after organic solvent is all absorbed by the soft template of the first material and resist is solidified into resist layer, remove soft template, obtain the substrate being loaded with resist layer, wherein, resist layer surface has the microstructure contrary with soft template.
The process of step D and E can be understood by reference diagram 2.
F. with resist structure layer for mask layer, substrate is etched or deposition process.
Solution according to the embodiment of the present invention assists soft impression method, soft template fully contacts owing to can be formed with substrate surface, organic solvent can be absorbed by soft template and resist can not be absorbed by soft template, on the substrate making the interstage obtain like this, resist structure is without cull, directly can carry out Graphic transitions.Therefore the solution of the embodiment of the present invention assists soft impression method to have without the advantage such as cull, working (finishing) area be large, simple.
For making those skilled in the art understand technical scheme of the present invention better, it is as follows that applicant introduces two embodiments in detail.
Embodiment 1
(1) PDMS soft template is made
The frequency made using holographic lithography be the orthogonal grating of 600 lines/mm as caster, make PDMS soft template.Wherein PDMS adopts 184 of Dow coring company, the mixing of 10:1 weight ratio is pressed with matrix and hardening agent, be poured into caster surface, put into vacuum drying chamber vacuum and keep 10 minutes, slowly be heated to 60 DEG C, isothermal curing demoulding after 120 minutes, can obtain the PDMS soft template of surface containing microstructure.
(2) solution is joined
Configuration concentration is the PMMA-acetone soln of 50 μm of ol/L, makes PMMA and acetone Homogeneous phase mixing.
(3) substrate is provided
Selection piezoid is substrate.The chromium film of 10nm is about, subsequently the golden film of evaporation one deck 50nm again at piezoid surface evaporation one deck.
(4) soft template-resist layer processed is covered
The PMMA-acetone soln prepared is dripped on golden film, PDMS soft template is pressed on solution gently, keep within 10 minutes, making acetone fully be absorbed by PDMS soft template, take the PMMA mask (i.e. resist layer) that PDMS soft template obtains without cull gently off.
(5) substrate is processed
Surface is directly dipped into KI:I with the substrate of PMMA mask
2: H
2wet etching gold in 0 (4g:1g:4ml) solution, within about 5 seconds, take out afterwards and clean with large water gaging rapidly, the figure on caster surface is transferred on substrate, as shown in Figure 3.
Embodiment 2
(1) PDMS soft template is made
The frequency made using holographic lithography be the parallel grating of 2000 lines/mm as caster, make PDMS soft template.Wherein PDMS adopts 184 of Dow coring company, the mixing of 10:1 weight ratio is pressed with matrix and hardening agent, be poured into caster surface, put into vacuum drying chamber vacuum and keep 10 minutes, slowly be heated to 60 DEG C, isothermal curing demoulding after 120 minutes, can obtain the PDMS soft template of surface containing microstructure.
(2) solution is joined
Configuration concentration is the PMMA-acetone soln of 50 μm of ol/L, makes PMMA and acetone Homogeneous phase mixing.
(3) substrate is provided
Selection silicon chip is substrate.Silicon chip single-sided polishing is cleaned up.
(4) soft template-resist layer processed is covered
The PMMA-acetone soln prepared is dripped on the polished surface of silicon chip, PDMS soft template is pressed on solution gently, keep within 10 minutes, making acetone fully be absorbed by PDMS soft template, take the PMMA mask (i.e. resist layer) that PDMS soft template obtains without cull gently off.
(5) substrate is processed
On surface with the golden film of the thick about 100nm of silicon chip surface sputtering of PMMA mask, then silicon chip to be dipped in acetone about 10 minutes, to remove the golden film on PMMA mask and surface thereof, complete Graphic transitions, as shown in Figure 4.
Although illustrate and describe embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, and those of ordinary skill in the art can change above-described embodiment within the scope of the invention, revises, replace and modification.
Claims (4)
1. solution assists a soft impression method, it is characterized in that, comprises the following steps:
Make the soft template that surface has the first material of microstructure;
By resist and organic solvent wiring solution-forming, wherein, described resist can not be absorbed by described first material, and described organic solvent can be absorbed by described first material;
Substrate is provided, and described solution is added drop-wise on described substrate;
Described soft template is placed on described substrate and solution droplets, is fully contacted by described solution droplets with described substrate to make described soft template;
After described organic solvent is all absorbed by the soft template of described first material and described resist is solidified into resist layer, remove described soft template, obtain the substrate being loaded with resist layer, wherein, described resist layer surface has the microstructure contrary with described soft template;
With described resist structure layer for mask layer, described substrate is etched or deposition process.
2. solution according to claim 1 assists soft impression method, it is characterized in that, described first material is dimethyl silicone polymer.
3. solution according to claim 1 assists soft impression method, it is characterized in that, described resist is polymethylmethacrylate.
4. solution according to claim 1 assists soft impression method, it is characterized in that, described organic solvent is acetone.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105895521A (en) * | 2016-03-21 | 2016-08-24 | 杭州电子科技大学 | Silicon oxide etching method |
| CN108269656A (en) * | 2016-12-30 | 2018-07-10 | 深圳光启空间技术有限公司 | Meta Materials manufacturing method |
| CN112897455A (en) * | 2021-01-20 | 2021-06-04 | 西安应用光学研究所 | Method for preparing continuous curved surface three-dimensional microstructure based on ICP (inductively coupled plasma) etching |
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| CN102004393A (en) * | 2004-04-27 | 2011-04-06 | 伊利诺伊大学评议会 | Composite patterning devices for soft lithography |
| CN102955355A (en) * | 2011-09-26 | 2013-03-06 | 上海市纳米科技与产业发展促进中心 | Method for preparing solvent permeation nanoimprint micro-nano structure |
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| CN102004393A (en) * | 2004-04-27 | 2011-04-06 | 伊利诺伊大学评议会 | Composite patterning devices for soft lithography |
| CN1800984A (en) * | 2005-12-27 | 2006-07-12 | 国家纳米技术产业化基地 | Negative nano-imprinting method |
| CN101573665A (en) * | 2006-10-27 | 2009-11-04 | 伊利诺伊大学评议会 | Devices and methods for pattern generation by ink lithography |
| WO2008093090A2 (en) * | 2007-01-31 | 2008-08-07 | Imperial Innovations Limited | Deposition of organic layers |
| US20080230773A1 (en) * | 2007-03-20 | 2008-09-25 | Nano Terra Inc. | Polymer Composition for Preparing Electronic Devices by Microcontact Printing Processes and Products Prepared by the Processes |
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| CN105895521A (en) * | 2016-03-21 | 2016-08-24 | 杭州电子科技大学 | Silicon oxide etching method |
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| CN112897455A (en) * | 2021-01-20 | 2021-06-04 | 西安应用光学研究所 | Method for preparing continuous curved surface three-dimensional microstructure based on ICP (inductively coupled plasma) etching |
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