TWI334652B - Optoelectronic semiconductor-body and its production method - Google Patents

Optoelectronic semiconductor-body and its production method Download PDF

Info

Publication number: TWI334652B
Authority: TW; Taiwan
Prior art keywords: semiconductor body; output coupling; epitaxial growth; layer; semiconductor
Prior art date: 2005-09-28

Application number

TW95135692A

Other languages

English (en)

Chinese (zh)

Other versions

TW200721551A (en

Inventor

Andreas Weimar

Peter Stauss

Alexander Walter

Original Assignee

Osram Opto Semiconductors Gmbh

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2005-09-28

Filing date

2006-09-27

Publication date

2010-12-11

2006-09-27 Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh

2007-06-01 Publication of TW200721551A publication Critical patent/TW200721551A/zh

2010-12-11 Application granted granted Critical

2010-12-11 Publication of TWI334652B publication Critical patent/TWI334652B/zh

Links

238000004519 manufacturing process Methods 0.000 title claims description 10
230000005693 optoelectronics Effects 0.000 title claims description 4
239000004065 semiconductor Substances 0.000 claims description 93
238000010168 coupling process Methods 0.000 claims description 51
238000005859 coupling reaction Methods 0.000 claims description 51
230000008878 coupling Effects 0.000 claims description 50
238000007747 plating Methods 0.000 claims description 28
239000000758 substrate Substances 0.000 claims description 28
239000000463 material Substances 0.000 claims description 21
230000005855 radiation Effects 0.000 claims description 21
238000000034 method Methods 0.000 claims description 18
-1 nitride compound Chemical class 0.000 claims description 17
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 15
229910002601 GaN Inorganic materials 0.000 claims description 13
239000011248 coating agent Substances 0.000 claims description 13
238000000576 coating method Methods 0.000 claims description 13
229910002704 AlGaN Inorganic materials 0.000 claims description 7
230000005670 electromagnetic radiation Effects 0.000 claims description 7
239000011148 porous material Substances 0.000 claims description 7
229910052594 sapphire Inorganic materials 0.000 claims description 4
239000010980 sapphire Substances 0.000 claims description 4
229910052733 gallium Inorganic materials 0.000 claims description 2
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
229910052596 spinel Inorganic materials 0.000 claims 1
239000011029 spinel Substances 0.000 claims 1
239000013078 crystal Substances 0.000 description 5
230000000903 blocking effect Effects 0.000 description 4
230000008569 process Effects 0.000 description 4
238000000407 epitaxy Methods 0.000 description 3
239000000126 substance Substances 0.000 description 3
230000008901 benefit Effects 0.000 description 2
238000004364 calculation method Methods 0.000 description 2
238000003486 chemical etching Methods 0.000 description 2
239000002019 doping agent Substances 0.000 description 2
229910052732 germanium Inorganic materials 0.000 description 2
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
239000000203 mixture Substances 0.000 description 2
239000004575 stone Substances 0.000 description 2
230000004888 barrier function Effects 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
238000005282 brightening Methods 0.000 description 1
239000004020 conductor Substances 0.000 description 1
239000000470 constituent Substances 0.000 description 1
239000007822 coupling agent Substances 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
230000005484 gravity Effects 0.000 description 1
229910052738 indium Inorganic materials 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
230000001788 irregular Effects 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
230000001404 mediated effect Effects 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
238000001259 photo etching Methods 0.000 description 1
230000000704 physical effect Effects 0.000 description 1
238000013139 quantization Methods 0.000 description 1
239000002096 quantum dot Substances 0.000 description 1
238000007788 roughening Methods 0.000 description 1
238000001228 spectrum Methods 0.000 description 1
238000000992 sputter etching Methods 0.000 description 1
230000003442 weekly effect Effects 0.000 description 1
238000003631 wet chemical etching Methods 0.000 description 1
238000009736 wetting Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Led Devices (AREA)
Semiconductor Lasers (AREA)

TW95135692A 2005-09-28 2006-09-27 Optoelectronic semiconductor-body and its production method TWI334652B (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE102005046370		2005-09-28
DE102005056604A DE102005056604A1 (de)	2005-09-28	2005-11-28	Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen

Publications (2)

Publication Number	Publication Date
TW200721551A TW200721551A (en)	2007-06-01
TWI334652B true TWI334652B (en)	2010-12-11

Family

ID=37832717

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW95135692A TWI334652B (en)	2005-09-28	2006-09-27	Optoelectronic semiconductor-body and its production method

Country Status (2)

Country	Link
DE (1)	DE102005056604A1 (de)
TW (1)	TWI334652B (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI364118B (en)	2007-06-29	2012-05-11	Huga Optotech Inc	Semiconductor structure combination for epitaxy of semiconductor optoelectronic device and manufactur thereof
DE102011012928A1 (de)	2011-03-03	2012-09-06	Osram Opto Semiconductors Gmbh	Verfahren zur Herstellung eines Dünnfilm-Halbleiterkörpers und Dünnfilm-Halbleiterkörper

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP4595198B2 (ja) *	2000-12-15	2010-12-08	ソニー株式会社	半導体発光素子及び半導体発光素子の製造方法
JP4233268B2 (ja) *	2002-04-23	2009-03-04	シャープ株式会社	窒化物系半導体発光素子およびその製造方法
DE10260937A1 (de) *	2002-12-20	2004-07-08	Technische Universität Braunschweig	Strahlungssemittierender Halbleiterkörper und Verfahren zu dessen Herstellung
TWI237903B (en) *	2004-06-24	2005-08-11	Epistar Corp	High efficiency light emitting device
TWI237402B (en) *	2004-03-24	2005-08-01	Epistar Corp	High luminant device

2005
- 2005-11-28 DE DE102005056604A patent/DE102005056604A1/de not_active Withdrawn
2006
- 2006-09-27 TW TW95135692A patent/TWI334652B/zh not_active IP Right Cessation

Also Published As

Publication number	Publication date
TW200721551A (en)	2007-06-01
DE102005056604A1 (de)	2007-03-29

Legal Events

Date	Code	Title	Description
2020-09-11	MM4A	Annulment or lapse of patent due to non-payment of fees

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