TW200721551A - Optoelectronic semiconductor-body and its production method - Google Patents

Optoelectronic semiconductor-body and its production method

Info

Publication number
TW200721551A
TW200721551A TW095135692A TW95135692A TW200721551A TW 200721551 A TW200721551 A TW 200721551A TW 095135692 A TW095135692 A TW 095135692A TW 95135692 A TW95135692 A TW 95135692A TW 200721551 A TW200721551 A TW 200721551A
Authority
TW
Taiwan
Prior art keywords
production method
epitaxial growth
optoelectronic semiconductor
semiconductor
semiconductorbody
Prior art date
Application number
TW095135692A
Other languages
Chinese (zh)
Other versions
TWI334652B (en
Inventor
Andreas Weimar
Peter Stauss
Alexander Walter
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200721551A publication Critical patent/TW200721551A/en
Application granted granted Critical
Publication of TWI334652B publication Critical patent/TWI334652B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

An opto-electronic semiconductorbody is described, during work it will emit electromagnetic radiation from its front(9), containing: -- one active semiconductorlayer system(4), which is based on one nitride-compound-semiconductor-material and can produce electromagnetic radiation, and -- one epitaxial growth output layer(8), which is based on one nitride-compound-semiconductor-material, this epitaxial growth output layer(8) has epitaxial growth holes(81) and is surrounded by the front(9) of opto-electronic semiconductorbody.
TW95135692A 2005-09-28 2006-09-27 Optoelectronic semiconductor-body and its production method TWI334652B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005046370 2005-09-28
DE102005056604A DE102005056604A1 (en) 2005-09-28 2005-11-28 Semiconductor body comprises an active semiconductor layer sequence based on a nitride compound semiconductor material which produces electromagnetic radiation and an epitaxially grown coupling layer with openings

Publications (2)

Publication Number Publication Date
TW200721551A true TW200721551A (en) 2007-06-01
TWI334652B TWI334652B (en) 2010-12-11

Family

ID=37832717

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95135692A TWI334652B (en) 2005-09-28 2006-09-27 Optoelectronic semiconductor-body and its production method

Country Status (2)

Country Link
DE (1) DE102005056604A1 (en)
TW (1) TWI334652B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7973326B2 (en) 2007-06-29 2011-07-05 Huga Optotech Inc. Semiconductor structure combination for epitaxy of semiconductor optoelectronic device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011012928A1 (en) 2011-03-03 2012-09-06 Osram Opto Semiconductors Gmbh Method for producing a thin-film semiconductor body and thin-film semiconductor body

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4595198B2 (en) * 2000-12-15 2010-12-08 ソニー株式会社 Semiconductor light emitting device and method for manufacturing semiconductor light emitting device
JP4233268B2 (en) * 2002-04-23 2009-03-04 シャープ株式会社 Nitride-based semiconductor light-emitting device and manufacturing method thereof
DE10260937A1 (en) * 2002-12-20 2004-07-08 Technische Universität Braunschweig Radiation-emitting semiconductor body and method for its production
TWI237903B (en) * 2004-06-24 2005-08-11 Epistar Corp High efficiency light emitting device
TWI237402B (en) * 2004-03-24 2005-08-01 Epistar Corp High luminant device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7973326B2 (en) 2007-06-29 2011-07-05 Huga Optotech Inc. Semiconductor structure combination for epitaxy of semiconductor optoelectronic device

Also Published As

Publication number Publication date
TWI334652B (en) 2010-12-11
DE102005056604A1 (en) 2007-03-29

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees