TWI331784B - Manufacturing method of semiconductor equipment - Google Patents

Manufacturing method of semiconductor equipment Download PDF

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Publication number
TWI331784B
TWI331784B TW093135056A TW93135056A TWI331784B TW I331784 B TWI331784 B TW I331784B TW 093135056 A TW093135056 A TW 093135056A TW 93135056 A TW93135056 A TW 93135056A TW I331784 B TWI331784 B TW I331784B
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TW
Taiwan
Prior art keywords
resin
semiconductor
bonding
semiconductor device
manufacturing
Prior art date
Application number
TW093135056A
Other languages
Chinese (zh)
Other versions
TW200522232A (en
Inventor
Sadahito Misumi
Takeshi Matsumura
Kazuhito Hosokawa
Hiroyuki Kondou
Original Assignee
Nitto Denko Corp
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Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of TW200522232A publication Critical patent/TW200522232A/en
Application granted granted Critical
Publication of TWI331784B publication Critical patent/TWI331784B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
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    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

The process for producing a semiconductor device according to the invention comprises a pre-sticking/fixing step of pre-sticking/fixing a semiconductor element (13) through an adhesive sheet (12) to an object (11) to which the semiconductor element (13) is to be stuck/fixed, and a wire (16) bonding step of performing wire (16) bonding without a heating step, wherein the shear adhesive force of the adhesive sheet (12) to the object (11) is 0.2 MPa or more at the time of the pre-sticking/fixing. This makes it possible to provide a semiconductor device producing process wherein a drop in the yield of semiconductor devices is suppressed and steps therein are made simple; wherein an adhesive sheet (12) is used in this process, and a semiconductor device obtained by the process. <IMAGE> <IMAGE> <IMAGE>

Description

1331784 15393pif.doc 九、發明說明： 【發明所屬之技術領域】 本發明是有關於-種半導體衰置的製造方法、在該方 法中使用的接著片以及由該方法得到之半導體裝置。 【先前技術】 _ 、為了能夠對應半導體裝置的微細化、高機能化的要 求’而縮小了在半導體晶片主平面的整個區域配置的電源 線的配線寬度與信號線間_隔。因此，阻抗的增加或不 同種即點之信號線間的信號干涉的產生，對於半導體晶片 =桑作速度、猶㈣寬裕度及抗靜電破翻度等，就成 為妨礙充分·能發揮的重素。為了解決這 =出了堆料賴元件的封賴構。(齡照林早期公 =開昭55-则&quot;虎案及曰公 2002-261233 號案 〇 另一方面，作為將半導體元件黏 ^ 的^料，使用熱硬化性糊狀_e)樹脂的^子(例如日本早 =么開制20匕02-179769號案)及合併使用熱可塑性樹脂及 ^硬化性樹關接著&gt;j的解⑷如 2〇 〇彻4G麵及日本早#樹 』= 已經被提出來。 氚系j 在習知的半導體裝置的釗袢 基板、引線框架或半導體元^ f中，在半導體元件與 0 β件進仃接著時使用接著片或接 者)’利用力偷進行接著片等硬化。接著= 5 1331784 15393pif.doc 性連接半導體元件與基板的打線接合，之後以封裝樹脂洗 鑄，並進行後硬化該封裝樹脂的封裴。 然而，由於在進行打線接合時，超音波震動或加熱會 使基板上的半導體元件移動。因此，習知在進行打線接合 之丽，就必須進行加熱製程以加熱硬化熱硬化性糊狀樹脂 或熱硬化性接著#，使半導體元軸著^不能移動。 而且，在由熱可塑性樹脂組成的接著片或合併使用熱 硬化性樹脂及熱可雛樹脂的接著片中，在晶粒黏著、打 線接合之前’為了確保與接著縣物的接著力及提昇可濕 性的目的，就需要進行加熱製程。 【發明内容】 。而’因為在進行打線接合之前加熱接著片，有所謂 從接者片產生揮發氣體的問題點。揮發氣體會污染鲜塾， 在大多的情況下，就會變的無法進行打線 。 化熱硬化接著片也會產生該;著片等的硬 =時，也包括半導體元件)產生彎曲的問題 ΐ二：產程中’也會有所謂因應力而使半 件產线痕關題點。近年來，伴隨 的缚型化·小型化，在考慮目解導體元件的厚产從· 微^下，甚至薄到卿微米以下的情況，基板J之彎曲 及半導體讀的m魏變的更 題就變的越來越重要。 解决乂些問 有鑑於上述之問題點，本發明之目的為提供一種可以 15393pif.doc 提昇產率且可以簡化製程的半導 此方法之接著&gt;^_方^彳=裝，料方法、使用 • A 所顿之半導體農置。 解/、上述之問題，本發明之半導 著片使半導體_暫時黏 著時的剪浦著力為大於等於^對被接讀的暫時黏 =述被接著職料基板、彳丨線框架或半導體元件。 而且’本發明之半導體裝置的製造 導，件之稿程與進行二= 中，程。在上述封錢程及/紐硬化製程 :丰以硬化封裝樹脂，並且可以藉由上述接著片 使+V肢7C件與被接著體黏著在一起。 f上返被接著體為半導體元件的情況下，包括在半導 與半導體元件之間，透過上述接著片堆疊間隔塾堆 二权_L述接著片對間隔塾或半導體元件的暫時黏 的男切接著力健為大於等於〇.2MPa。 而且’在上述封裝製程及/或後硬化製程中，利用加熱 使封農樹脂硬化’並且_上述接著片使半導體元件與間 隔墊黏著在一起。 卜上述打線接合製程較佳是在80°C〜250X：之溫度中進 匕而^ ’就上述接著片而言，可以使用含有熱可塑性樹 脂的接^ °此外，就上述接著&gt;1而言，可以㈣含有熱 15393pif.doc 硬化性樹脂與熱可塑性樹脂兩者的接著片。 .在此，就上述熱硬化性樹脂而言，較佳是使用環氧樹 脂及/或苯_脂。就上述熱可舰樹脂而言，較佳 丙烯酸酯樹脂。 此外’在使用合併使贿硬化輯脂與熱可塑性樹脂 的材料作為上述接著片的情況下，較佳是使用添加有交聯 劑的接著片。 而且’為了解決上述的問題，本發明之接著片係為在 -半導體裝置之製造方財所使狀接料，此半導體裝 置=製造方法包括透過接著片使半導體元件暫時黏著在被 接著體上之暫時龄製程，*經過加絲程，然後進行打 ，接合之打線接合製程，其中上述接著片對被接著體的暫 日^黏者時的剪切接著力為大於等於〇.2MPa。 而且，為了解決上述的問題，本發明之半導體裝置係 、由制&quot;t導體裝置之製造方法所得到的產品，此半導體裝 製造方法包括透過接著片使半導體元件暫時黏著在被 ，者體上之暫時料製程，秘勒熱製程，然後進行打 ^接合之打線接合製程，其巾所使用的上述接著片對被接 者體=暫_著時的剪切接著力為大於等於 0.2MPa。 ^ I曰由本發明之構成’由於接著片對被接著體的暫時黏 者時^剪切接著力為大於等於〇 2MPa，即使省略接著片的 t熱衣程而直接移送到打線接合製程，在該製程中經過超 :ί振，或加熱，在接著片與被接著體之接著面也不會產 /月動變形。因此，抑制產率降低的打線接合就成為可能。 15393pi£doc 行接的製造方法中，在打線接合製程之前進 體合污汰该加熱所產生的來自接著片的揮發氣 -H /、二、干墊。但是，由於本發明不需要那樣的製程，因 ^可以講求產率的提昇。此外，藉由省略加熱接著片之製 程三也就不會有例如基板產”岐半導體元件上產生' 痕等現象。結果，半導體元件進—步_型化也成為可能： 而且利用上述接著片的黏著，由於可以與在封裝 裝樹脂之樹脂封裝製程及/或上述樹賴裝製程後進^ ==硬化製程中的加熱_起進行’因此可以謀求 在此，由於上述打線接合製程是在8(rc〜25(rc之、、w 度中進行數秒至數分鐘，在該製程+，藉由接著片並不: 使半導體元件與被接著體完全地黏著在一起。 而且’就上述接著片而言，可以使用含有熱可塑性樹 月曰的材料’或者也可以使时有熱硬錄細旨與熱可 樹脂兩者的材料。 匕在此，就上述熱硬化性樹脂而言，較佳是使用環氧樹 月曰及/或苯酚樹脂。就上述熱可塑性樹脂而言，較佳是使用 ，烯酸酯樹脂。這些樹脂由於離子性不純物少且耐埶性 高’而可以確保半導體元件的可靠度。 ‘、、、 此外，就上述接著片而言，較佳是使用添加有交聯劑 的材料。 如上所述，於上述半導體元件上透過上述接著片而堆 疊1或2以上的半導體元件的情況或視實際需要而在上述 1331784 15393pif.doc ΐ體元件之間透過上述接著以堆疊間P 物(墊請情況可達到相同的作用效果。而且 = 的簡單化，在錄個半導體元件的3 :欠元封 求製造效率的進一步提昇。 乂5某 為讓本發明之上述和其他目的、特徵和優點能更 易懂，下文特舉較佳實施例，廿两人 月”、、員 〇㈣，、關並配合所關式，作詳細 明如下。 ％ 【實施方式】 (實施例1) 請參照圖1Α至圖1C以朗本發明之實施例。 圖1A至圖1C係繪示本發明之實施例丨的 的製造方法的流程圖。但是，在說明中將不需要的二、 而且為了容易的進行說明，也有擴大或縮小的圖= 为。以上的事項對於下述的圖示也相同。 本實施例的半導縣置的製造方法，包括以接 使半導體元件13暫_著在基板知線购(被接著體， 以下簡稱為基板等11)上之暫_著製程，秘過加 程，然後進行打線接合之打線接合製程β Μ，本實施 的半導體U的製造方法’也包括崎额脂丨5縣 體几件13之封裝製程及後硬化該魄樹脂15之後硬化^ 程0 ^ ㈣1Α所示’上述暫_著製程為將半導體元件13 ，過接著片丨2暫軸著在基㈣U上之製程。作為 導體元件13暫_著在基㈣U上财法，例 1331784 15393pif.doc 板等11上堆疊接著片12後，於接著片12上， 面朝上的方式依序堆疊並暫時黏著半導體元件U = 法。當然’本發明也可以將預先暫時黏著有接 夕 導體元件13暫時黏著並堆疊在基板等u。乃2之+ 作為上述基板，可以使用過去習知的產品。 為上述引線框架’可以使用銅引線框架、42合金引線框加 月女-二氮本）、聚醯亞胺等所組成之有機基板。但 是1Γ於這些產品，也包括安裝有半導體元件 + V體7L件電性連接而可以使用的電路基板。 作為上述接著片12是使用對基板#11的暫時黏著 的剪切接著力為大於等於G.2Mpa的接著片，較佳是使用 •2〜lOMPa範圍内之接著片。由於接著片12的剪切接著 為大於等於〇.2嫩，即使不經過加熱製程：進行打 、描3製程’在該製程中經過超音波振動或加熱 2 12與半導體元件13絲板等丨丨之接著面也 ==即，半導體元件不會因在打線接合時的超音i 因此可以防止打線接合的成功率降低。而且， 對於接者片12，在後段中有更詳細的說明。 ^上述打線接合製程係為將基板等11之端子部（内引腳） ,與半導體元件13上的電極銲塾(未®*)]^接合線16 ^性連接的製程(請參照圖1Bh作為上述接合線Μ，可以 =例如金線、！g線或銅線等。進行打線接合時的溫度為 C〜250°C，較佳為_〜22()ΐ的溫度範圍。而且，加 丄 J：)丄 /OH· 15393pif.doc 為數秒至數分鐘。結線是在上述溫度範圍内的 壓二=合併使用由超音波的震動能與由施加加 且，=:呈1，並沒有執行利用接著片12進行黏著。而 在本衣耘中，並沒有利用接著片12使半導體元件13 基板等11料在—起。在此，即使在耽〜2 度^圍内，接著片12的剪切接著力也必縣大於等於 〇力2MPa。在此溫度範圍内，煎切接著力未滿讀pa的話， =線接，會因超音波震動而使半導奸件移動，而無 法進仃打線接合，使的產率降低。 上述封襄製程係為利用封裝樹脂封裝半導體元件13 2程(請參闕1C)。本製程是為了保護基板等u上所 :載之半導體7L件13或接合線16而進行之製程。本製程 疋^模具進行雜雛的叙彡。作為縣概15，使用例 如環氧系的樹脂。在樹脂封裝時的加熱溫度通常是以 175 C之溫度，進行60〜9〇秒。但是本發明並不限定於此， 例如可以在165〜185 C之溫度’進行數分鐘的固化。因 此’在硬化封裝樹脂時，同時透過接著片12使半導體元件 13與基板等11鮮在一起。亦即，在本發明中，即使在 不進=後狀後硬化製程之情況下，在本製財也可以利 用接著片12進行黏著’而能夠期望減少製程步驟並縮短半 導體裝置的製造期間。 ’ 在上述後硬化製程中，可以使上述封裝製程中硬化不 足的封裝樹脂完全的硬化。即使在於封裝製程中無法利用 12 1331784 15393pl£doc 接著片12進行點著的情況下 脂化時，同時藉由接著片二夠3裳樹 的加熱溫度會因為封裝樹脂的種類而不同，衣，中 165〜赋的範圍内，加熱時間為…小時。口疋在 接著，詳述上述的接著片12。接著片12只 f合時具有大於等於a2MPa的剪切接著力就可以」 ，冓成亚沒有特別的限^。具體而言，例如是只由單ς 者，層所構成之接著片或者在芯材料的單面或兩面丄形二[Technical Field] The present invention relates to a method for producing a semiconductor breakdown, a laminate used in the method, and a semiconductor device obtained by the method. [Prior Art] In order to meet the requirements for miniaturization and high performance of the semiconductor device, the wiring width and the signal line interval of the power supply line disposed over the entire area of the main surface of the semiconductor wafer are reduced. Therefore, the increase in impedance or the generation of signal interference between signal lines of different types, that is, the semiconductor wafer = the speed of the mulberry, the width of the hexagram, and the degree of antistatic breakdown, etc., become a serious factor that hinders sufficient performance. . In order to solve this = the block structure of the stacking component. (In the case of the early age of the forest, the first public, the opening of the shoji, the shoji, the shoji, the shoji, the shoji, the shoji, the shoji, the sho ^子 (for example, Japan Early = 么 制 匕 20匕 02-179769) and the combination of thermoplastic resin and ^ hardenability tree followed by &gt;j solution (4) such as 2 〇〇 4 4G face and Japan early #树』 = has been proposed. In the conventional substrate, the lead frame or the semiconductor element of the semiconductor device, the semiconductor element and the 0β device are used in the subsequent step, and the bonding film or the connector is used. . Next, = 5 1331784 15393pif.doc is used to bond the semiconductor element to the substrate by wire bonding, followed by laminating with an encapsulating resin, and post-hardening the encapsulating resin. However, ultrasonic vibration or heating causes the semiconductor elements on the substrate to move during the wire bonding. Therefore, it is conventionally necessary to carry out a heating process to heat-harden the thermosetting paste resin or thermosetting property to prevent the semiconductor element from moving. Further, in the case of an adhesive sheet composed of a thermoplastic resin or a laminate in which a thermosetting resin and a heat-sealable resin are used in combination, before the die bonding or wire bonding, the wettability is ensured in order to ensure adhesion with the next article. For the purpose of sex, a heating process is required. SUMMARY OF THE INVENTION On the other hand, since the adhesive sheet is heated before the wire bonding, there is a problem that a volatile gas is generated from the contact piece. Volatile gases can contaminate fresh sputum, and in most cases, it becomes impossible to wire. The heat-hardening adhesive sheet also produces this; when the film is hard, the semiconductor element also includes the problem of bending. In the second stage of production, there is also a so-called stress-induced half-line trace. In recent years, with the confinement and miniaturization, it is considered that the thickening of the conductor element is from micro- and even thin to below the micron, and the bending of the substrate J and the m-variation of the semiconductor reading are more problematic. It is becoming more and more important. In order to solve the above problems, the object of the present invention is to provide a semi-conducting method which can improve the yield by 15393 pif.doc and can simplify the process. The method is followed by the method of loading, the method, and the use. • A semiconductor farm installed by A. Solve /, the above problem, the semi-conductive sheet of the present invention makes the shear force of the semiconductor_ temporarily adhered to be greater than or equal to the temporarily adhered to the read substrate, the squall frame or the semiconductor component . Further, the manufacturing process of the semiconductor device of the present invention is carried out by the process of the second and middle processes. In the above-mentioned sealing process and/or hardening process: the encapsulating resin is hardened, and the +V limb 7C member can be adhered to the adherend by the above-mentioned adhesive sheet. When the upper returning body is a semiconductor element, it is included between the semiconductor material and the semiconductor element, and is passed through the above-mentioned bonding sheet stacking interval, and the temporary bonding is performed on the spacer or the semiconductor element. Then the force is greater than or equal to 2.2MPa. Further, in the above-described encapsulation process and/or post-hardening process, the sealing resin is cured by heating' and the above-mentioned bonding sheet adheres the semiconductor element to the spacer. Preferably, the above-mentioned wire bonding process is carried out at a temperature of 80 ° C to 250 X: and in the case of the above-mentioned adhesive sheet, a connection containing a thermoplastic resin can be used. Further, in the case of the above &gt; It is possible to (iv) a backsheet containing both a hot 15393 pif.doc hardenable resin and a thermoplastic resin. Here, as the thermosetting resin, epoxy resin and/or benzoic acid are preferably used. As the above heat-resistant resin, an acrylate resin is preferred. Further, in the case where a material obtained by combining a brittle hardening resin and a thermoplastic resin is used as the above-mentioned adhesive sheet, it is preferred to use a continuous sheet to which a crosslinking agent is added. Further, in order to solve the above problems, the adhesive sheet of the present invention is formed in a manufacturing manner of a semiconductor device, and the semiconductor device=manufacturing method includes temporarily bonding a semiconductor element to a substrate by a bonding sheet. The temporary age process, * after the wire feeding process, and then the bonding and bonding wire bonding process, wherein the shearing force of the above-mentioned film on the temporary body of the adherend is 大于. 2 MPa or more. Further, in order to solve the above problems, the semiconductor device of the present invention is a product obtained by the method of manufacturing a "t conductor device", which comprises temporarily bonding a semiconductor element to a body through a bonding sheet. The temporary material process, the secret heat process, and then the wire bonding process is performed, and the above-mentioned adhesive sheet used for the towel has a shearing force of 0.2 MPa or more for the body of the receiver. ^I曰 is constituted by the present invention. 'Because of the temporary adhesion of the adhesive sheet to the adherend, the shearing force is 大于2 MPa or more, and even if the t-heating process of the adhesive sheet is omitted, it is directly transferred to the wire bonding process. During the process, it is super-violent, or heated, and it will not be produced/deformed at the end of the bonding sheet and the bonded body. Therefore, wire bonding which suppresses a decrease in yield is possible. In the manufacturing method of the 15393 pi line connection, the volatile gas -H /, 2, dry mat from the succeeding sheet produced by the heating is merged before the wire bonding process. However, since the present invention does not require such a process, it is possible to increase the yield. Further, by omitting the process 3 of heating the succeeding film, there is no such phenomenon as the occurrence of a mark on the semiconductor element, for example, the substrate is produced. As a result, the semiconductor element is further formed into a pattern: and the above-mentioned succeeding film is also used. Adhesion can be performed because it can be performed with the resin encapsulation process of the packaged resin and/or the heating process in the hardening process after the above-mentioned tree-laid process. Therefore, it is possible to obtain the above-mentioned wire bonding process at 8 (rc). ~25 (rc, w degrees in a few seconds to a few minutes, in the process +, by the film is not: the semiconductor element and the adherend are completely adhered together. And 'in the above-mentioned film, It is possible to use a material containing a thermoplastic tree, or a material having both a thermosetting resin and a thermosetting resin. Here, in the case of the above thermosetting resin, epoxy is preferably used. In the case of the above thermoplastic resin, it is preferred to use an acrylate resin. These resins are capable of securing a semiconductor element due to less ionic impurities and high susceptibility. For the above-mentioned adhesive sheet, it is preferable to use a material to which a crosslinking agent is added. As described above, one or more semiconductor elements are stacked on the semiconductor element through the above-mentioned adhesive sheet. In the case of the above, depending on the actual needs, the above-mentioned 1331784 15393pif.doc body elements are passed through the above-mentioned subsequent stacking P objects (the same effect can be achieved by the padding situation. And the simplification of =, in the recording of a semiconductor component 3 The above-mentioned and other objects, features and advantages of the present invention are more readily understood. The following is a preferred embodiment of the present invention, "two months", "members" (four), The following is a detailed description of the following: % [Embodiment] (Embodiment 1) Please refer to FIG. 1A to FIG. 1C for an embodiment of the present invention. FIG. 1A to FIG. 1C are diagrams showing the implementation of the present invention. A flowchart of the manufacturing method of the example. However, in the description, it is not necessary, and for the sake of easy explanation, the figure which is enlarged or reduced is also the same. The above matters are also the same for the following description. The manufacturing method of the semi-conducting county of the present embodiment includes the temporary processing of the semiconductor element 13 on the substrate (the substrate, hereinafter referred to as the substrate, etc. 11). Then, the wire bonding process β Μ of the wire bonding is performed, and the manufacturing method of the semiconductor U of the present embodiment also includes a packaging process of several parts of the prefecture of the 5th prefecture, and a hardening process after the hardening of the enamel resin 15 ^ (4) 1Α The above-mentioned temporary process is a process of temporarily connecting the semiconductor element 13 to the substrate (4) U. The conductor element 13 is temporarily placed on the base (four) U, and the example 1331784 15393pif.doc board, etc. After the upper film 12 is stacked on the upper surface of the wafer 12, the semiconductor element U = method is temporarily stacked on the upper surface 12 in a face-up manner. Of course, the present invention can temporarily temporarily adhere the conductive member 13 to the substrate or the like, and stack it on the substrate or the like. 2 + As the above substrate, a conventionally known product can be used. For the above lead frame, an organic substrate composed of a copper lead frame, a 42 alloy lead frame plus a nitrous oxide, a polyimine or the like can be used. However, these products include a circuit board that can be used by mounting a semiconductor element + a V-body 7L electrically connected. The above-mentioned adhesive sheet 12 is an adhesive sheet having a shear adhesive force for temporary adhesion to the substrate #11 of G. 2 MPa or more, and preferably a back sheet in the range of 2 to 10 MPa. Since the shear of the succeeding sheet 12 is then greater than or equal to 〇.2, even if it is not subjected to a heating process: performing a punching and drawing process, 'over the ultrasonic vibration or heating in the process 2 12 and the semiconductor element 13 wire plate, etc. The junction surface is also == that is, the semiconductor element is not prevented from being lowered by the super sound i at the time of wire bonding. Moreover, for the receiver piece 12, a more detailed description will be given in the following paragraph. The above-described wire bonding process is a process of connecting the terminal portion (inner pin) of the substrate 11 and the electrode pad (not **) on the semiconductor element 13 to the bonding wire 16 (refer to FIG. 1Bh as a process). The bonding wire 可以 may be, for example, a gold wire, a !g wire, a copper wire, etc. The temperature at the time of wire bonding is C to 250 ° C, preferably a temperature range of _ 22 22). :)丄/OH· 15393pif.doc is a few seconds to a few minutes. The junction line is the pressure in the above temperature range = the combined use of the vibration energy of the ultrasonic wave is applied by the application, and =: is 1, and the adhesion is performed by the adhesive sheet 12. In the present case, the semiconductor element 13 substrate or the like is not used in the adhesive sheet 12 to be used. Here, even in the case of 耽~2 degrees, the shearing force of the sheet 12 is equal to or greater than 2 MPa. In this temperature range, if the force of the frying is not enough to read pa, the line will be connected, and the semi-conductive items will be moved due to the ultrasonic vibration, and the wire bonding will not be performed, so that the yield is lowered. The above sealing process is to package the semiconductor element 13 by using a sealing resin (see 1C). This process is for the process of protecting the substrate 7 or the semiconductor layer 7 or the bonding wires 16 on the substrate. This process 疋^ mold to carry out the description of the babies. As the prefecture 15, an epoxy resin is used. The heating temperature at the time of resin encapsulation is usually carried out at a temperature of 175 C for 60 to 9 sec. However, the present invention is not limited thereto, and for example, it may be cured at a temperature of 165 to 185 C for several minutes. Therefore, when the encapsulating resin is hardened, the semiconductor element 13 and the substrate 11 and the like 11 are freshly passed through the bonding sheet 12. That is, in the present invention, even in the case where the post-curing process is not performed, it is possible to use the adhesive sheet 12 for adhesion in the production of the present invention, and it is desirable to reduce the number of steps and shorten the manufacturing period of the semiconductor device. In the above-described post-hardening process, the encapsulating resin which is insufficiently hardened in the above-described encapsulation process can be completely cured. Even if it is not possible to use the 12 1331784 15393 pl doc in the packaging process, and then the film 12 is smeared in the case of smearing, the heating temperature of the sapling tree by the slab 2 is different depending on the type of the encapsulating resin. Within the range of 165 to Fu, the heating time is ... hours. The above-described adhesive sheet 12 will be described in detail. Then, when the sheet 12 is only f, it has a shearing force of a2 MPa or more, and there is no particular limitation. Specifically, for example, it is a single sheet composed of a single layer, or a single side or a double side of the core material.

接著劑層的具衫層結構之接料。在此，作為上述^芯 材料，可以使用薄膜(例如聚醯亞胺膜、聚酯膜、聚對苯二 曱酸乙二賴、聚萘二曱酸乙二g旨膜、聚碳酸§旨膜）、以玻 祸纖維或塑勝製不織纖維強化的樹脂基板、石夕基板或玻璃 基板等。而且，也可以採用使接著片與切割片成為一體之 物品。The coating of the layer of the coating layer is then carried out. Here, as the above-mentioned core material, a film (for example, a polyimide film, a polyester film, a polyethylene terephthalate, a polyethylene naphthalate film, a polycarbonate film, a polycarbonate film) may be used. A resin substrate, a stone substrate or a glass substrate reinforced with a glass fiber or a plastic fiber. Further, an article in which the end sheet and the dicing sheet are integrated may be employed.

接著劑層為具有接著機能的層，作為其構成材料，可 以採用合併使用熱可塑性樹脂與熱硬化性樹脂的材質。當 然，也可以單獨使用熱可塑性樹脂。 作為上述熱可塑性樹脂’例如是天然橡膠、丁基橡膠、 異戊一稀橡移、氣丁一細橡膠、乙稀-乙酸乙醋共聚合物、 乙烯-丙烯酸共聚合物、乙烯-丙烯酸酯共聚合物、聚丁二 烯樹脂、聚碳酸酯樹脂、熱可塑性聚醯亞胺樹脂、6-耐綸 或6, 6-耐綸等聚醯胺樹脂、苯氧基樹脂、丙烯酸酯樹脂、 PET或PBT等之飽和聚酯樹脂、聚醯胺醯亞胺樹脂、或氟 樹脂等。這些熱可塑性樹脂可以單獨的使用之，也可以合 13 1331784 15393pi£doc 併兩種以上而使用之。在這些熱可塑性樹脂中，特佳的是 離子性不純物少、耐熱性高，且可以確保半導體元件之可 靠度的丙烯酸酯樹脂。 就上述丙烯酸s旨樹脂而言，並沒有特別的限定，可以 採用例如以一種或兩種以上之丙烯酸或曱基丙烯酸之酯類 為成分的聚合物。其中，丙稀酸或甲基丙烯酸之酯類具有 碳原子數30以下、特別是碳原子數4〜18的直鏈或分支鏈 的烷•基。上述烧基例如是甲基、乙基、丙基、異丙基、正 丁基、特丁基、異丁基、戊基、異戊基、己基、庚基、環 己基、2-甲基己基、辛基、異辛基、壬基、異壬基、癸基、 異癸基、十一烷基、月桂基、十四烷基、十八烷基、硬酯 基、十二烷基。 就上述形成上述聚合物之其他單體而言，並沒有特別 的限定，可以採用例如丙烯酸、甲基丙烯酸、羧乙基丙烯 酸酯、羧戊基丙烯酸酯、衣康酸、馬來酸、富馬酸或巴豆 酸寺含缓基單體；馬來酸酐或衣康酸酐等酸軒單體；（曱笑） 丙烯酸2-羥基乙酯、（曱基)丙烯酸2·羥基丙酯、（曱基f丙 烯酸4-羥基丁酯、（甲基)丙烯酸6_羥基己酯、（曱基)丙歸 酸8-包基辛酯、（曱基)丙烯酸1〇_經基癸酯、（甲基)丙烯酸 12-經基十二碳酯或(4_羥曱基環己基曱基丙烯酸酯等= 含經基單體；苯乙烯續酸、烯丙基石黃酸、2_(曱基）丙歸麟 胺-2-甲基丙磺酸、（曱基）丙烯醯胺丙磺酸、磺丙基（甲基） 丙烯酸酯或（曱基)丙烯醯氧萘磺酸等含磺酸基單體；或^_ 羥乙基丙烯醯基磷酸酯等含磷酸基單體。 1331784 15393pif.doc t就上述熱硬化性樹脂而言，例如是苯酚樹脂、胺基樹 月=、不飽和聚酯樹脂、環氧樹脂、聚胺基曱酸酯樹脂、矽 祕月曰、或熱硬化性聚醯亞胺樹脂等。這些樹脂可以單獨的 使=之，也可以合併兩種以上而使用之。其中較佳是腐蝕 ，導體元件之離子性不純物含量少的環氧樹脂。作為環氧 樹脂之硬化劑較佳是苯酚樹脂。 就上述環氧樹脂而言，只要是能夠作為接著劑組成物 使用的材料就可以’而沒有特別的限制，例如雙酚A型、 雙酚F型、雙酚s型、溴化雙酚A型、氫化雙酚A型、 雙酚AF型、聯苯型、萘型、芴型、苯酚酚醛清漆型、鄰 甲酶紛酸清漆型、三羥基苯甲烷型、四苯酚基乙烷型等之 一官能環氧樹脂或多官能環氧樹脂；或乙内醯脲型、三縮 水甘油基異氰酸酯型或縮水甘油胺型等的環氧樹脂。這些 細脂可以單獨的使用之’也可以合併兩種以上而使用之。 在這些環氧樹脂中’以酚醛清漆型環氧樹脂、聯苯型環氧 樹脂、三羥基苯曱烷型環氧樹脂或四苯酚基乙烷型環氧樹 脂為特佳。這是因為這些環氧樹脂對作為硬化劑之苯酚樹 月旨的反應性良好、且耐熱性等優良。 而且’上述苯酚樹脂為可作為上述環氧樹脂之硬化劑 使用的樹脂’例如苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、 甲酚酚醛清漆樹脂、特丁苯酚酚醛清漆樹脂、壬苯酚酚醛 凊漆樹脂等之酚醛清漆型苯酚樹脂；可溶酚醛樹脂型苯酚 樹脂；聚對氧苯乙烯等聚氧苯乙烯等。這些樹脂可以單獨 的使用之’也可以合併兩種以上而使用之。這些苯酚樹脂 15 1331784 15393pif.doc 中以笨酚酚醛清漆樹脂、苯酚芳烷基樹脂為特佳。這是因 為可以提咼半導體裝置之黏著可靠度。 上述環氧樹脂與苯酚樹脂之摻合比例，對於上述環氧 树月曰成分中之環氧基1當量’較佳是摻合苯盼樹脂中的經 基0.5〜2.0當量，更佳是ο,Μ 2當量。亦即，兩者的換 合比例超出上述範圍，因為無法進行充分的進行硬化反 應，環氧樹脂硬化物的特性容易劣化。 而且，在本發明中，以含有環氧樹脂、苯酚樹脂及丙 烯酸酷樹賴接著&gt;1為特佳。這些義由於離子性不純物 少、耐熱性向，因此可以確保本半導體元件的可靠度。在 t情況了’其摻合比例是對於1G°重量份的丙稀酸醋樹 月曰，％氧樹脂與苯酚樹脂的混合量為1⑻〜2〇〇重量份。 本發明之接著片12為了預先有某種程度的交聯，在製 作時也可以添加能夠與聚合物之分子鏈末端的官能基等反 應之多s旎性化合物作為交聯劑。如此，即可以提昇高溫 下的接著特性，並達成耐熱性的改善。 〇就上，交聯劑而言，可以採用習知的交聯劑。特別是 :苯二異氰酸S旨、二苯基曱烧二異氰酸醋、p_亞苯基二異 氛，自曰1，5-萘_二異氰酸酿、多元醇與二異氰酸自旨的加成 物等之，異旨彳b合物。就交聯_添加量而言，對於 1〇〇重里2之上述聚合物，較佳是0.05〜7重量份。交聯 J的添加里多於7重量份，由於黏著力會降低，因此不好。 另方面，乂聯劑的添加量少於〇 〇5重量份，由於凝集力 好。而且’聚異紐S旨化合物同時也可以含 16 15393pifldoc =見實際需要的除了環氣樹脂科之其他多官能性化合 而且’本發明之接著片12中，相甘m :合無機填充劑。無機填充劑的摻合、== :充=:性:=;=成-能=述= 金類；其他碳等所組成之各種'銲錫等金屬或合 獨的使用之，也可以合併兩種以 用 以虱化矽及熔融氧化矽為較佳。 * 粒徑較佳為0.1〜80微米的範圍内。，·，.、機填充劑的平均 上述無機填充劑的摻合量對於 脂成分，較佳為m 100重量份的有機樹 7〇重量％ 量％，特佳是設定為0〜 外，二以除了上述無機填充劑之 際要適虽的摻合其他添加劑。就a他 如是阻燃劑、魏衫劑或離子捕捉劑等。 氧樹ΐίΓ ’例如是三氧化綈、五氧化録、漠化環 種燃劑可以單獨的使用之’也可以合併兩 :甲2紗合劑而言，例如是ρ·(3,4·環氧環己基)乙基 ^甲，基，、γ-環氧丙氧基丙基三甲氧基魏、γ-環氧 乳土丙土 ？基二乙氧基石夕炫等。這些石夕炫麵合劑可以單 17 15393pif.doc 獨的使用之，也可以合併兩種以上而使用之。 就離子捕捉劑而言，例如是水滑石、氫氧化鉍等。這 些離子捕捉劑可以單獨的使用之，也可以合併兩種以上而 使用之。 (實施例2) 請參照圖2A至圖2E以說明本發明之實施例2的半導 體裝置的製造方法。 圖2A至圖2E係繪示本發明之實施例2的半導體裝置 的製造方法的流程圖。 本實施例的半導體裝置與實施例1的半導體裝置相比 較’不同的是堆疊多數個半導體元件的3次元封裝。更詳 細的說明’其不同點在於包括在半導體元件上透過上述接 著片而堆疊其他半導體元件的製程。 首先，如圖2A所示，以切成設定尺寸的至少一個以 上=接著片12暫時黏著在作為被接著體的基板等丨丨上。 =，於接著片12上，以使打線接合面朝上的方式暫時黏 考半導體元件U(請參照圖2B)。紐，於半導體元 =開其電極料的部分而暫時黏著接料Μ(請表 2C)。之後，於接著片14上，以 …、、、θ 形成半導體耕13(請參照圖犯）。、σ壯的方式 人制接著’ Γ進行加熱製程，如圖2Ε所示，進行打線接 :衣私。於疋，以接合線16電性連接 中 電極銲塾絲鱗u。 等騎13中的 然後，進行以封農樹脂龍半導體元件13之封裝製 15393pif.doc 程，在硬化封裝樹脂之同時，利用接著片12、14使基板等 11與半導體元件13之間以及半導體元件13彼此之間黏著 在一起。而且，在封裝製程之後，也可以進行後硬化製程。 如果採用本實施例的話，在半導體元件的三次元封裝 的情況下，由於不進行加熱接著片12、14的加熱處理，^ 此可以達到使製程的簡單化以及產率的提昇。而且，由於 不會有基板產生彎曲及半導體元件上產生裂痕等現象，因 此可使半導體元件進一步的薄型化成為可能。 (實施例3) 請參照圖3A至圖3G以說明本發明之實施例3的半導 體裝置的製造方法。圖3 A至圖3G係繪示本發明之實施例 2的半導體裝置的製造方法的流程圖。 本a把例的半^體裳置與實施例2的半導體裝置相比 較’不_是堆4的半導體元件之間存在有_塾。更样 細的說明，其㈣點在於包括在料體元件與半導體元件 之間透過上述接著片而堆疊間隙墊的擊程。 ㈣IΪ 至^ 3C ^，其與上述實酬2相同， 暫時黏著接著片12、半導體元件 著’著片14上，依序堆叠暫時黏 接料14及半導體元件13齡照圖3D至 -製2著二進如圖3G所示，進行打線接 〇衣# 於疋’以接合線電 - 電極録墊躲_ U。 ^連料導體讀13中的 1331784 15393pif.doc 在硬=装封裝半導體元件之封裝製程， 盘利用接著片12、14使基板等11 黏著在-起及半導體元件13與間隙塾21之間 f程。葬由， 裝製程之後，也可以進行後硬化 體裝置。日订上述的製程，而可以得到本實施例的半導 可以：二:隙墊而言’並沒有特別的限定’例如 白11的矽晶片、聚醯亞胺膜等。 (實施例4) 體枣ϊ i 1至圖4Ε以說明本發明之實施例4的半導 虹農置的㈣方法。圖4Α至圖4 4的半導體裳置的製造方法的流程圖。 只_ 著片所示’於半導體晶圓13,的背面貼上接 圓！3,暫時^於出;Τ妾著片的半導體晶圓。將半導體晶 有接著帶％上(請參照圖4Β)。接著，將附 參照並從切割帶33使附有接著劑二：(- 附有接’讀㈣接合_上的方式將. 妾者片12的+導體元件13暫時黏著於基板 打線接合面朝上的方式將附有接著片31且財 5之^導體7L件32暫時黏著於半導體元件13上。、 著’不進行加熱製程，如圖4E所示，進行打_ 二MU6電性連接半導體元件U、32 中的電極銲墊與基板等11。 32 20 15393p!f.doc 在硬Γΐ裝樹脂封裝半導體元件之封裝製程’ 與半導體元件’利用接著片12、31使基板等11 — 4之間以及半導體元件13與半導體元件32 。-二、。而且，在封裝製程之後，也可以進行後 半導^置猎進订上述的製程，而可以得到本實施例的 (實施例5) 至圖犯以說明本發明之實施例5的半導 虹裝置的仏方法。圖5A至圖5E係繪示本發明之實施例 4的半置的製衫法的流程圖。 、 本κ %例的半導體裳置的製造方法與實施例4的半導 ，裝置的製造方法她較，㈣的是在切割帶33上堆疊接 著片12之後然後在接著片n，上堆叠半導體晶圓η，。 盲先，如圖5A所示，於切割帶33上堆疊接著片12,。 然後’在在接著&gt;；12，上堆疊半導體晶圓13，(請參照圖 犯)、。接著，將附有接著片的半導體晶圓切割成設定大小而 形成晶片狀(請參照H 5C)，並從湖帶33 的晶片剝離。 接著々圖5D所示，以使打線接合面朝上的方式將 附有接著片12的半導體树13暫時黏著於基板等η上。 然後’以使打線接合面朝上的方式將附有接著片31且尺寸 不同之半導體元件32暫時黏著於半導體元件13上。此時， 半導體it件32的黏著要避開下層之半導體元件 銲墊部分。 UJ1/04 15393pif.doc 接著，不進行加熱剪 合製程。於是，以接人 。圖5E所示，進行打線接 中的電極銲墊虚其^ I 屯性連接半導體元件13、32 然後，奸盤。 在硬化封裝樹脂之同暗，、^導肢几件之封裝製程， 與半導體元件13之_及半12、31絲板等11 之間黏著在—起 導體70件13與半導體元件32 硬化製程。II由進彳^製程之後’也可以進行後 半導體裝置。 丁以、4程，而可以得到本實施例的 (實施例6) 請參照圖6A至圖6C及圖 ί體裝置的製造方法的流程圖。圖7戶轉示 ㈣體裝置的製造方法所得到之半導體 财的半導體裝置的製造方法與實施例3的半導 塾。、、衣以方法相比較，不同的是採用芯材料作為間隙 首先，與上述實施例5相同，於切割帶33上堆疊接著 =丨2’。然後，在在接著片12，上堆疊半導體晶圓丨^；。接 T將附有接著片的半導體晶圓切割成設定大小而形成晶 狀，並從切割帶33使附有接著劑的晶片剝離。如此，即 可得到具備有接著片12的半導體元件13。 另一方面，於切割帶33上形成接著片41(請參照圖 22 1331784 15393plf.doc 6A)，於該接著片上黏貼芯材料42(請參照圖 切割成設定尺寸而形成晶片狀(請參照圖6C)，並㈣割帶 33使附有接者劑的晶片剝離。如此’ 片41’的晶片狀芯材料42，。 ㈣The subsequent layer is a layer having an adhesive function, and as a constituent material thereof, a material in which a thermoplastic resin and a thermosetting resin are used in combination may be used. Of course, it is also possible to use a thermoplastic resin alone. As the above thermoplastic resin, for example, natural rubber, butyl rubber, isoprene-like rubber, gas-fine rubber, ethylene-acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate Polymer, polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nene or 6,6-nylon, phenoxy resin, acrylate resin, PET or A saturated polyester resin such as PBT, a polyamidamine resin, or a fluororesin. These thermoplastic resins may be used singly or in combination of two or more. Among these thermoplastic resins, an acrylate resin having less ionic impurities, high heat resistance, and reliability of a semiconductor element can be particularly preferable. The acrylic acid-based resin is not particularly limited, and for example, a polymer containing one or two or more kinds of esters of acrylic acid or mercaptoacrylic acid can be used. Among them, the ester of acrylic acid or methacrylic acid has a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms. The above-mentioned alkyl group is, for example, methyl, ethyl, propyl, isopropyl, n-butyl, tert-butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, cyclohexyl, 2-methylhexyl. , octyl, isooctyl, decyl, isodecyl, decyl, isodecyl, undecyl, lauryl, tetradecyl, octadecyl, stearyl, dodecyl. The other monomer forming the above polymer is not particularly limited, and for example, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, and fumar can be used. Acid or croton acid temple containing slow-acting monomer; acid anhydride such as maleic anhydride or itaconic anhydride; (曱笑) 2-hydroxyethyl acrylate, 2-hydroxypropyl (meth) acrylate, (fluorenyl) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth) acrylate, 8-caprolactyl (mercapto) acrolein, 1 〇 经 经 经 、, (meth) acrylate 12-Carbododecyl ester or (4-hydroxydecylcyclohexyl decyl acrylate, etc. = trans-containing monomer; styrene-renewed acid, allyl-refluoric acid, 2-(indolyl)-propanolamine- a sulfonic acid group-containing monomer such as 2-methylpropanesulfonic acid, (mercapto) acrylamide-propanesulfonic acid, sulfopropyl (meth) acrylate or (fluorenyl) propylene sulfonaphthalenesulfonic acid; or ^_ a phosphate-containing monomer such as hydroxyethyl acryloyl phosphatidyl phosphate. 1331784 15393pif.doc t For the above thermosetting resin, for example, a phenol resin, an amine base tree =, no And polyester resin, epoxy resin, polyamino phthalate resin, sputum, or thermosetting polyimine resin, etc. These resins may be used alone or in combination of two or more. Preferably, it is an epoxy resin which is corroded and has a low ionic impurity content of the conductor element. The hardener of the epoxy resin is preferably a phenol resin. As far as the above epoxy resin is concerned, it can be used as an adhesive composition. The materials used can be 'with no particular restrictions, such as bisphenol A type, bisphenol F type, bisphenol s type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, a naphthalene type, an anthracene type, a phenol novolac type, a phthalic acid varnish type, a trihydroxyphenylmethane type, a tetraphenol ethane type, or the like, or a functional epoxy resin or a polyfunctional epoxy resin; An epoxy resin such as a triglycidyl isocyanate type or a glycidylamine type. These fine resins may be used singly or in combination of two or more. In these epoxy resins, a novolac type ring is used. Oxygen resin, biphenyl type epoxy A grease, a trishydroxyphenylene oxide type epoxy resin or a tetraphenol ethane type epoxy resin is particularly preferable because these epoxy resins have good reactivity with a phenol tree as a curing agent, and heat resistance, etc. Further, 'the above phenol resin is a resin which can be used as a curing agent for the above epoxy resin', such as a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-phenol novolac resin, a phenol phenol novolac A novolac type phenol resin such as a lacquer resin; a phenol resin type phenol resin; a polyoxy styrene such as polyoxy styrene, etc. These resins may be used singly or in combination of two or more. In the resin 15 1331784 15393pif.doc, a phenol novolac resin and a phenol aralkyl resin are particularly preferable because the adhesion reliability of the semiconductor device can be improved. The blending ratio of the epoxy resin to the phenol resin is preferably from 0.5 to 2.0 equivalents, more preferably ο, of the epoxy group in the epoxy resin composition. Μ 2 equivalents. That is, the ratio of the two is outside the above range, and since the sufficient hardening reaction cannot be performed, the properties of the cured epoxy resin are easily deteriorated. Further, in the present invention, it is particularly preferable to contain an epoxy resin, a phenol resin, and acrylic acid cool tree followed by &gt;1. Since these ionic impurities are low in ionic impurities and heat resistance, the reliability of the semiconductor element can be ensured. In the case of t, the blending ratio is 1 part by weight of the acrylic acid vine tree, and the amount of the mixture of the % oxygen resin and the phenol resin is 1 (8) to 2 parts by weight. The adhesive sheet 12 of the present invention may be added as a crosslinking agent to a polyfunctional compound capable of reacting with a functional group at the end of the molecular chain of the polymer or the like in order to have a certain degree of crosslinking in advance. In this way, the adhesion characteristics at high temperatures can be improved and the heat resistance can be improved. In the case of a crosslinking agent, a conventional crosslinking agent can be used. In particular: benzene diisocyanate S, diphenyl sulfonium diisocyanate, p_ phenylene diisomeric, self-carrying 1,5-naphthalene diisocyanate, polyol and diiso The addition of a cyanic acid to the like, etc. In terms of the amount of crosslinking/addition, it is preferably 0.05 to 7 parts by weight based on 1 part by weight of the above polymer. More than 7 parts by weight of the cross-linking J is added, and the adhesion is lowered, which is not preferable. On the other hand, the amount of the crosslinking agent added is less than 5 parts by weight of 〇, because the cohesive force is good. Further, the compound of the poly(S) can also contain 16 15393 pifldoc = see other practical polyfunctional compounds other than the cyclic resin group and in the adhesive sheet 12 of the present invention, the inorganic filler. Incorporation of inorganic fillers, == :charge=:sex:=;=cheng-energy=description=gold; various metals such as solders composed of other carbons or the like can be combined. It is preferred to use bismuth telluride and bismuth oxide. * The particle size is preferably in the range of 0.1 to 80 μm. The average amount of the above-mentioned inorganic filler to be added to the organic filler is preferably 100 parts by weight of the organic tree, and is preferably set to 0% by weight, and more preferably In addition to the above inorganic fillers, other additives should be blended. Just a he is a flame retardant, Wei shirt or ion trapping agent. Oxygen tree ΐ Γ Γ ' For example, antimony trioxide, pentoxide, desertification ring fuel can be used alone 'can also be combined two: for the 2 yarn mixture, for example, ρ · (3, 4 · epoxy ring Hexyl) ethyl group, ketone, gamma-glycidoxypropyltrimethoxywei, γ-epoxy latex propyl soil? Base diethoxy stone Xi Xuan and so on. These Shi Xixuan noodle mixture can be used alone or in combination of two or more. The ion scavenger is, for example, hydrotalcite, barium hydroxide or the like. These ion scavengers may be used singly or in combination of two or more. (Embodiment 2) A method of manufacturing a semiconductor device according to Embodiment 2 of the present invention will be described with reference to Figs. 2A to 2E. 2A to 2E are flowcharts showing a method of manufacturing a semiconductor device according to a second embodiment of the present invention. The semiconductor device of the present embodiment differs from the semiconductor device of the first embodiment in the case of a three-dimensional package in which a plurality of semiconductor elements are stacked. A more detailed description 'is different in that it includes a process of stacking other semiconductor elements on the semiconductor element through the above-mentioned bonding sheets. First, as shown in Fig. 2A, at least one of the cut size and the upper sheet 12 are temporarily adhered to a substrate or the like as a member to be bonded. =, on the succeeding film 12, the semiconductor element U is temporarily pasted so that the wire bonding surface faces upward (please refer to Fig. 2B). New, in the semiconductor element = open the part of the electrode material and temporarily adhere to the material 请 (please see Table 2C). Thereafter, on the succeeding sheet 14, a semiconductor cultivating 13 is formed by ..., θ, θ (please refer to the figure). The method of σ 壮 壮 人 人 人 人 人 人 人 人 Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ In Yu, the bonding wire 16 is electrically connected to the middle electrode welding wire scale u. Then, in the case of riding 13, the process of encapsulating the resin semiconductor device 13 is carried out, and the encapsulating resin is used, and the substrate 12 and the semiconductor element 13 and the semiconductor element are bonded by the bonding sheets 12 and 14. 13 stick to each other. Moreover, a post-hardening process can also be performed after the packaging process. According to the present embodiment, in the case of the three-dimensional encapsulation of the semiconductor element, since the heating treatment of the sheets 12, 14 is not performed by heating, the simplification of the process and the improvement of the yield can be attained. Further, since the substrate is not bent or cracked in the semiconductor element, the semiconductor element can be further reduced in thickness. (Embodiment 3) A method of manufacturing a semiconductor device according to Embodiment 3 of the present invention will be described with reference to Figs. 3A to 3G. 3A to 3G are flowcharts showing a method of manufacturing a semiconductor device according to Embodiment 2 of the present invention. In the case of the semiconductor device of the second embodiment, the semiconductor device of the second embodiment is compared with the semiconductor device of the second embodiment. More specifically, the point (4) is to include a stroke in which the gap pad is stacked between the material element and the semiconductor element through the above-mentioned adhesive sheet. (4) I Ϊ to ^ 3C ^, which is the same as the above-mentioned remuneration 2, temporarily bonding the adhesive sheet 12, the semiconductor component on the 'slice 14, sequentially stacking the temporary bonding material 14 and the semiconductor component 13 as shown in Fig. 3D to -2 As shown in Fig. 3G, the wire is connected to the # # 疋 以 以 以 以 以 以 接合 接合 接合 接合 接合 接合 接合 接合 接合 接合 接合 接合 接合 接合 接合^1331784 15393pif.doc in the contiguous conductor read 13 in the package process of the hard-packaged semiconductor device, the disk is adhered to the substrate 11 etc. by the bonding pads 12, 14 and the semiconductor device 13 and the gap 塾 21 . After the burial, the post-hardening device can also be carried out after the process. The above-described process can be obtained, and the semiconductor of the present embodiment can be obtained. Two: The spacer is not particularly limited, for example, a white 11 wafer, a polyimide film, or the like. (Embodiment 4) The body jujube ϊ i 1 to Fig. 4A illustrates the method of (4) of the semi-conducting Hong Nong set in the fourth embodiment of the present invention. 4 to 4 are flow charts of a method of manufacturing a semiconductor skirt. Only the _ sheet is shown on the back of the semiconductor wafer 13, and the circle is affixed! 3, temporarily ^ out; holding a piece of semiconductor wafer. The semiconductor crystal has a carry-on band (see Fig. 4A). Next, the + conductor element 13 of the latter 12 is temporarily adhered to the substrate bonding surface upward from the dicing tape 33 by attaching the adhesive 2: (- with the 'read' (four) bonding_ The method is to attach the adhesive sheet 31 and the conductor 7L member 32 of the yoke 5 is temporarily adhered to the semiconductor element 13. The 'heating process is not performed, as shown in FIG. 4E, the MU2 is electrically connected to the semiconductor element U. , electrode pads and substrates in 32, etc. 32 32 15393p!f.doc The package process 'and the semiconductor element' in the hard-filled resin-packaged semiconductor device is used between the substrate 11 and 4 by the bonding sheets 12 and 31, and The semiconductor element 13 and the semiconductor element 32. - 2, and, after the packaging process, the latter process can also be performed, and the above process can be performed, and the (Example 5) of the present embodiment can be obtained. The method of the semiconductor device of the fifth embodiment of the present invention is shown in FIG. 5A to FIG. 5E. FIG. 5A to FIG. 5E are flowcharts showing the method of the half-shirt manufacturing method according to the fourth embodiment of the present invention. Manufacturing method and semi-conductor of embodiment 4, method of manufacturing the device (4), after stacking the succeeding sheets 12 on the dicing tape 33 and then stacking the semiconductor wafers η on the succeeding sheets n, blindly, as shown in Fig. 5A, the slabs 12 are stacked on the dicing tape 33. Then 'On the next step>, 12, the semiconductor wafer 13 is stacked, (refer to the figure), and then the semiconductor wafer with the bonding sheet is cut into a predetermined size to form a wafer (refer to H 5C). Then, the wafer of the lake tape 33 is peeled off. Next, as shown in Fig. 5D, the semiconductor tree 13 with the bonding sheet 12 is temporarily adhered to the substrate η or the like so that the wire bonding surface faces upward. The semiconductor element 32 with the adhesive sheet 31 and different sizes is temporarily adhered to the semiconductor element 13 in an upward manner. At this time, the adhesion of the semiconductor member 32 is avoided by the underlying semiconductor device pad portion. UJ1/04 15393pif. Doc Next, the heat-shearing process is not performed. Then, in order to pick up the person, as shown in Fig. 5E, the electrode pads in the wire bonding are connected to the semiconductor elements 13, 32, and then the disk is sealed. The same as dark, ^ limbs The mounting process is adhered to the semiconductor element 13 and the half 12, 31 wire plate, etc., and the semiconductor device 32 is cured. After the process is completed, the semiconductor device can be used. Referring to FIG. 6A to FIG. 6C and the flowchart of the manufacturing method of the apparatus, the method for manufacturing the household device of the fourth embodiment is obtained by the method of the present invention. The manufacturing method of the semiconductor device of the semiconductor chip is the same as that of the semiconductor device of the third embodiment. The difference is that the core material is used as the gap. First, as in the above-described fifth embodiment, the dicing tape 33 is stacked on the dicing tape 33. =丨2'. Then, on the succeeding film 12, a semiconductor wafer is stacked. The semiconductor wafer with the adhesive sheet is cut into a predetermined size to form a crystal, and the wafer with the adhesive is peeled off from the dicing tape 33. Thus, the semiconductor element 13 provided with the adhesive sheet 12 can be obtained. On the other hand, a bonding sheet 41 is formed on the dicing tape 33 (refer to FIG. 22 1331784 15393plf.doc 6A), and the core material 42 is adhered to the bonding sheet (please cut into a set size to form a wafer shape (refer to FIG. 6C). And (4) the cutting tape 33 peels off the wafer with the carrier. Thus, the wafer-like core material 42 of the sheet 41 is (4)

接著，以使打線接合面朝上的方式將半導體元件U 透過接著片12而暫時黏著於基板等11上。於半導體元件 13上透過接著片41，而暫時黏著芯材料π。然後，以使打 線，合面朝上的方式將半導體元件13透過接著片η $於，:材料42’上。藉由進行上述的製程，而可“到 本貫施例的半導體農置。 以接t ^進行加歸程，進行打線接合製程。於是， 中m if接半導體元件13中的電極輝墊與基板 寻11中的内部連接用接盤(請參照圖7)。 在硬以封裝樹脂封裝半導體元件之封裝製程， 在更化封裳树月曰之同時，利 ==:3之間以及半導體元❹與== 化製程。2且、在職製程之後，也可以進行後硬 導體裝置。3仃上賴餘，*可以制本實施例的半 使用S的並沒有特別的限定’可以 膜、聚醋膜、而=，可以使用_ (例如聚醯亞胺 膜、聚碳醆酯膜等广―：^乙―酯膜'聚萘二甲酸乙二酯 樹脂基板、鏡顧維或娜製領纖維強化的 ，兄面矽晶圓、矽基板或玻璃基板等。 23 1331784 15393pif.doc (實施例7) 請參照圖8A至圖8B以說明本發明之實施例6的半導 體裝置的製造方法。圖8A至圖8B係繪示本發明之實施例 4的半導體裂置的製造方法的流程圖。 本實施例的半導體裝置的製造方法與實施例6的半導 體裝置的製造方法相比較，不同的是採用鑽孔取代芯材料 的切割來進行晶片化。 首先，與上述實施例6相同，製備具有接著片12的半 導體元件13。另一方面，於接著片41上黏貼芯材料42。 之後，利用鑽孔等成設定尺寸而形成晶片狀，即可得到具 備有接著片41’的晶片狀芯材料42,。 接著’與上述實施例6相同’透過接著片12、41，依 序堆疊芯材料42,及半導體元件13而暫時黏著在一起。 然後，進行打線接合製程、封裝製程以及視實際需要 而進行的後硬化製程’而可以得到本實施例的半導體裝置。 (其他的事項） 丰莫i上ί基板等上進行三次元雜的情況下，於形成有 件之電路的面上形成緩衝膜。此緩衝膜的材質例 疋、化石夕膜或由聚酿亞胺等耐熱樹脂所組成的膜。 接著體元件的三次元封裝中，各層所使用的 u為同—種材料所構成，可以對應製造 條件或用途而適當的變更之。 ° 明的:ΐ:二:描述的堆疊方法只是用於說 士C'戶、際舄要而適當的變更之。舉例來 24 1331784 15393pif.doc 說，在上述實施例2的半導體元件的製造方法中，第二層 以後的半導心件也相_實闕3巾^ 法來進行堆疊。 且 /在上述的實施例中，在基板等上堆疊多數個半導體元 件後，都是說明進行打線接合製程的例子，但是本發明並 不限定於此。舉例來說，也可以對應將半導體元件堆疊在 基板等上之次數，而進行多次打線接合製程。 且 以下根據實驗例，以更具體的說明本發明之内容。 (實驗例1) 對於以丙稀酸乙酯-曱基丙稀酸甲酯為主成分的曱基 丙烯酸醋系聚合物（跟上工業（股）公司製，Paracr〇n W-197CM)100份、將多官能異氰酸酯系交聯劑3份、環氧 樹脂(Japan Epoxy Resin(股)公司製 Epikotel004)23 份、苯 酚樹脂(三井化學(股)公司製，MILEX XLC_CC)6份溶解於 曱基乙基酮中’調整成濃度20重量％的接著劑組成物的溶 液0 將此接者劑組成物的溶液塗佈於作為剝離概裏的經過 聚矽氧脫模處理的由聚對苯二曱酸乙二酯膜(厚度5〇微米) 所組成的脫模處理膜上。然後，於12〇°C之溫度乾燥3分 鐘，以製作出厚度25微米的本實驗例丨的接著片。 (實驗例2) 在實驗例2中’除了使用以丙烯酸丁酯為主成分的聚 合物(跟上工業(股)公司製’ PARACRON SN-710)取代實驗 例1的曱基丙烯酸酯系聚合物之外，進行與實驗例相同的 25 1331784 15393plf.doc 步驟，以製作出實驗例2的接著片（厚度5〇微米” (比較例1) 對於以丙烯酸乙酯-甲基丙烯酸甲酯為主成分的曱基 丙烯酸酷系聚合物（跟上工業（股）公司製，pARACR〇N W-197CM)100 份、將環氧樹脂(Japan Ep〇xy Resin(股)公司 製Epikotel004)23份、苯酚樹脂(三井化學(股)公司製， MILEX XLC-CC)6份溶解於曱基乙基嗣中，調整成濃度2〇 重量％的接著劑組成物的溶液。 將此接著劑組成物的溶液塗佈於作為剝離襯裏的經過 聚石夕氧脫模處理的由聚對苯二甲酸乙二酯臈(厚度50微米） 所組成的脫模處理膜上。然後，於12(TC之溫度乾燥3分 鐘’以製作出厚度25微米的比較例1的接著片。 (比較例2) 在比較例2中，除了使用以丙烯酸丁酯為主成分的聚 合物(跟上工業(股)公司製，PARACRON SN-710)取代比較 例1的曱基丙烯酸酯系聚合物之外，進行與實驗例相同的 步驟’以製作出比較例2的接著片（厚度25微米）。 [剪切接著力] 對於上述實施例及比較例所製作的接著片，以下述方 式測定接著片對基板、引線框架及半導體元件暫時黏著時 的剪切接著力。 '^ 首先’對基板、引線框架及半導體元件製作各種試樣。 在基板(UniMicron Technology Corporation 製，商 〇 名 TFBGA 16χ16(2216·001Α01))的情況下’使用將所得到之 26 1331784 lS393pif.doc 接著片從分離器剝離後，切割成2mm□的接著片。另一方 面’切割蒸鍍有鋁的晶圓，製作出長2mmx寬2mmx厚500 Μ米的晶片。將此晶片黏晶於基板上製作出測試片。黏晶 是於120Ϊ之溫度下施負荷(〇.25MPa)，加熱1秒的條件 下’使用黏晶機((股)新川製SPA-300)進行。 在引線框架（新光電氣股份製，商品名 CA-F313(MF202))的情況下，與基板的情況相同製作出試 驗片。 而且’在半導體元件的情況下’使用將所得到之接著 片從分離器剝離後，切割成6mm□的接著片。於引線框架 (新光電氣股份製，商品名CA-F313(MF202))的晶片銲墊 上’黏晶切割成長6mmx寬6mmx厚500微米的形成有測 試用模型圖案的測試用元件的晶片 (Phoenix · Semiconductor (股)公司製，型號：NT-103、鈍 化層SbN4 /5000埃厚）。之後使用將上述接著片切割成 2mm口的接著片，將由蒸鍍有鋁的晶圓切割出的長2mmx 寬2mmx厚500微米的晶片黏晶於上述測試用元件上以製 作出測試片。黏晶是以與基板及引線框架之情況時的相同 條件下進行。 剪切接著力的測定步驟如下，將各試驗片固定於能夠 控制溫度的加熱板上’將黏晶的半導體元件於推挽計中以 速度O.lmm/sec的速度水平的按壓，以測定剪切接著力。 在加熱板溫度分別為80°C、175。(：、250°C之情況下進行測 疋。而且，採用 Model-2252(AIKOH engineering (股)公司 27 1331784 15393pif.doc 製)作為測試裝置。而且，在黏晶後，不進行試樣的加熱製 程。而且，在半導體元件的情況下，在測定剪切接著力時， 將2mm□的蒸鍍有鋁的半導體元件以推挽計按壓，以測定 剪切接著力。 其結果如表^所示。 〜— 無加熱製程之剪切接著力（MPa) ****—, 引線框架 基板 半導體元棹 力11熱板溫 ^(°C) 80 175 250 80 175 250 80 175 250 道驗例1 0.4 0.3 0.2 0.4 0.3 0.2 0.5 0.4 (η 遗驗例2 0.5 0.4 0.3 0.4 0.3 0.2 0.6 0.4 0 λ 及較例1 0 0 0 0 0 0 0 0 0 土較例2 0 0 0 0 0 0 0 0 0 如表一所示，實驗例1及實驗例2之接著片，在任一 個溫度中，表示具有大於等於〇2MPa的剪切接著力。另 〜方面，比較例1及比較例2之接著片的剪切接著力都為 [打線接合性] …使用上述實施例及比較例所製作的接著片，測試用於 元件與引線框架、基板、半導體元件的情況時的打 首先，對基板、引線框架及半導體元件製作各種試樣。 28 1331784 15393pif.doc 在基板(UniMicron Technology Corporation 製，商品名 TFBGA 16xl6(2216-001A01))的情況下，使用將所得到之 接著片從分離器剝離後，切割成2mm□的接著片。另一方 面’切割蒸鍍有鋁的晶圓，製作出長2mmx寬2mmx厚500 微米的晶片。將此晶片黏晶於基板上製作出測試片。黏晶 疋於120C之溫度下施負荷(〇_25MPa)，加熱1秒的條件 下，使用黏晶機((股)新川製SPA-300)進行之。 在引線框架（新光電氣股份製，商品名 CA_F313(MF202))的情況下，使用將所得到之接著片從分 離态剝離後，切割成7.5mm口的接著片。另一方面，切割 洛鍍有紹的晶圓’製作出長7.5mmx寬7.5mmx厚500微米 的晶片。將此晶片黏晶於基板上製作出測試片。黏晶是以 與基板之情況時的相同條件下進行。 而且，在半導體元件的情況下，使用將所得到之接著 片k分離器剝離後，切割成6mm□的接著片。於引線框架 (新光電氣股份製’商品名CA_F313(MF2〇2))的晶片銲墊 上，黏晶切割成長6mmx寬6mmx厚1〇〇微米的形成有測 5式用模型圖案的測試用元件的晶片 (Phoenix · Semiconductor (股)公司製，型號：NT_1〇3、鈍 化層Si3N4 /5000埃厚）。此測試用元件作為第一半導體元 之後使用將上述接著片蝴成5_^的接著片，將由 ，鑛有銘的晶圓切割出的長加咖寬加⑽厚微米的 晶^黏晶於上述測試用元件上以製作出測試片。此晶片作 為第二半導體元件。而且’對每個試樣製作出2〇個。 29 15393pif.doc 合二 9,n〇r ^ Q 压口，皿度分別為 80〇c、175〇C、 合裝置此外，如UTC.((股)新川公司製)作為打線接 行^定，外★ ^接合之成功率的判斷是利用張力計進 ^^曰％田力強度為大於等於5§時判斷為成功。而且， ，：進行試樣的加熱製程。而且，在半導體元件 入月’ 帛—半導體元件與引線框架之職行打線接 合。 其結果如表二所示。 表二 — 一~爸卞熱製程之打線接合成功率f 引線框架 基板 半導體元件 加熱板溫 度CC) 80 175 250 80 175 250 80 175 250 實驗例1 100 100 100 100 100 100 100 100 100 實驗例2 100 — 100 100 100 100 100 100 100 100 比較例1 0 0 0 0 0 0 0 0 0 比較例2 0 0 0 0 0 0 0 0 0 如表二所示’實驗例1及實驗例2之接著片，在任一 個溫度中’成功率都為1〇〇%。另一方面，比較例1及比 較例2之接著片的成功率都為0%。實驗例1及實驗例2 1331784 15393pif.doc 之接著片的成功率都為100%、且分別具有充分的剪切接 f力，因此不容易產生晶片的偏差。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1A至圖1C係繪示本發明之實施例1的半導體裝置 的製造方法的流程圖》 圖2A至圖2E係綠示本發明之實施例2的半導體裝置 的製造方法的流程圖。 圖3A至圖3G係繪示本發明之實施例3的半導體裝置 的製造方法的流程圖。 圖4A至圖4E係繪示本發明之實施例4的半導體裝置 的製造方法的流程圖。 圖5A至圖5E係繪示本發明之實施例5的半導體裝置 的製造方法的流程圖。 圖6A至圖6C係繪示本發明之實施例6的半導體裝置 的製造方法的流程圖。 圖7係繪示由本發明之實施例6的半導體裝置的製造 方法所得到之半導體裝置的概略剖面圖。 圖8A至圖8B係纟會示本發明之實施例7的半導體裂置 的製造方法的流程圖。 【主要元件符號說明】 1331784 15393pif.doc 11 :基板等 12、 12’、14、3卜 4卜 41’ ：接著片 13、 32 :半導體元件 13’ ：半導體晶圓 15 :封裝樹脂 16 :接合線 21 :間隙墊 33 :切割帶 42、42’ ：芯材料Next, the semiconductor element U is temporarily transmitted to the substrate 11 or the like by passing the semiconductor element U through the bonding sheet 12 with the bonding surface facing upward. The core material 13 is temporarily adhered to the semiconductor element 13 through the adhesive sheet 41. Then, the semiconductor element 13 is transmitted through the bonding sheet η$:: material 42' so that the bonding is performed in a face-up manner. By performing the above-mentioned process, it is possible to "go to the semiconductor manufacturing of the present embodiment. The return process is performed by t ^, and the wire bonding process is performed. Thus, the electrode pad and the substrate in the semiconductor component 13 are connected. The internal connection socket in 11 (please refer to Figure 7). In the packaging process of hard-packing resin-packaged semiconductor components, while the sealing of the tree is at the same time, the profit is between ==3 and the semiconductor element == Process. 2, after the in-service process, the post-hard conductor device can also be carried out. 3 仃 赖 , * * * * 半 半 半 半 半 半 半 半 半 半 半 半 半 半 半 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以 可以And =, can be used _ (for example, polyimine film, polycarboester film, etc. -: ^ ethyl ester film 'polyethylene naphthalate resin substrate, mirror Gu Wei or Na collar fiber reinforced, The wafer is faced with a wafer, a germanium substrate, a glass substrate, etc. 23 1331784 15393pif.doc (Embodiment 7) A method of manufacturing a semiconductor device according to Embodiment 6 of the present invention will be described with reference to Figs. 8A to 8B. Fig. 8A to Fig. 8B A flow of a method of manufacturing a semiconductor crack according to Embodiment 4 of the present invention is shown The manufacturing method of the semiconductor device of the present embodiment is different from the method of manufacturing the semiconductor device of the sixth embodiment, except that the dicing is performed by using a dicing instead of the dicing of the core material. First, in the same manner as in the above-described embodiment 6, the preparation is performed. The semiconductor element 13 having the adhesive sheet 12 is bonded to the adhesive sheet 41. Then, the core material 42 is adhered to the adhesive sheet 41. Thereafter, the wafer is formed into a wafer shape by drilling or the like to obtain a wafer-shaped core having the adhesive sheet 41'. The material 42 is then 'the same as the above-described embodiment 6', and the core material 42 and the semiconductor element 13 are sequentially stacked through the bonding sheets 12 and 41, and temporarily bonded together. Then, the wire bonding process, the packaging process, and the actual need are performed. The semiconductor device of the present embodiment can be obtained by performing the post-hardening process. (Other matters) When a three-dimensional impurity is applied to the substrate or the like, a buffer film is formed on the surface of the circuit on which the device is formed. An example of the material of the buffer film, a fossil film, or a film made of a heat-resistant resin such as polyacrylonitrile. In the three-dimensional package of the body element, each layer is The u used is the same material and can be appropriately changed according to the manufacturing conditions or use. ° Ming: ΐ: 2: The description of the stacking method is only used to say that the C's household is appropriate. For example, in the manufacturing method of the semiconductor device of the second embodiment, the semi-conducting core members after the second layer are also stacked. In the above-described embodiment, after a plurality of semiconductor elements are stacked on a substrate or the like, an example in which the wire bonding process is performed will be described. However, the present invention is not limited thereto. For example, the semiconductor elements may be stacked on a substrate or the like. The number of times is up, and the wire bonding process is performed multiple times. The contents of the present invention will be more specifically described below based on experimental examples. (Experimental Example 1) 100 parts of a thioglycolic vinegar-based polymer (Paracr〇n W-197CM, manufactured by Seiko Co., Ltd.) containing ethyl acrylate-mercaptopropyl methacrylate as a main component 3 parts of polyfunctional isocyanate-based crosslinking agent, 23 parts of epoxy resin (Epikotel004, manufactured by Japan Epoxy Resin Co., Ltd.), and 6 parts of phenol resin (manufactured by Mitsui Chemicals Co., Ltd., MILEX XLC_CC) were dissolved in thiol a solution of the binder composition adjusted to a concentration of 20% by weight in the ketone. A solution of the composition of the sorbent is applied to the poly(p-benzoic acid) which has been subjected to polyfluorination treatment as a stripping process. A film of a release film composed of an ethylene glycol film (thickness 5 μm). Then, it was dried at a temperature of 12 ° C for 3 minutes to prepare a film of this experimental example having a thickness of 25 μm. (Experimental Example 2) In Experimental Example 2, the thiol acrylate polymer of Experimental Example 1 was replaced by the use of a polymer containing butyl acrylate as a main component (PARACRON SN-710 manufactured by Soka Kogyo Co., Ltd.). In the same manner as in the experimental example, the procedure of 25 1331784 15393plf.doc was carried out to prepare the succeeding film of Example 2 (thickness 5 μm) (Comparative Example 1). The main component was ethyl acrylate-methyl methacrylate. 100 parts of thioglycolic acid-based polymer (PARACR〇N W-197CM, manufactured by Panasonic Industrial Co., Ltd.), epoxy resin (Epikotel004, manufactured by Japan Ep〇xy Resin Co., Ltd.), 23 parts, phenol resin (Mitsubishi Chemical Co., Ltd., MILEX XLC-CC) 6 parts of a solution of an adhesive composition dissolved in a mercaptoethyl hydrazine and adjusted to a concentration of 2% by weight. A solution of the adhesive composition was applied to the solution. As a release liner, it was subjected to a polyoxo-oxygen release treatment on a release-treated film composed of polyethylene terephthalate (50 μm thick), and then dried at 12 (temperature of TC for 3 minutes). A laminate of Comparative Example 1 having a thickness of 25 μm was produced. (Comparative Example 2) In Comparative Example 2, except that a polymer containing butyl acrylate as a main component (PARACRON SN-710, manufactured by Hosei Co., Ltd.) was used instead of the thiol acrylate polymer of Comparative Example 1, The same procedure was used to prepare the succeeding sheet of Comparative Example 2 (thickness: 25 μm). [Shear adhesion force] For the succeeding sheets produced in the above Examples and Comparative Examples, the sheet-to-substrate and lead frame were measured in the following manner. And the shearing force at the time of the temporary adhesion of the semiconductor element. '^ First, various samples were prepared for the substrate, the lead frame, and the semiconductor device. In the case of the substrate (manufactured by UniMicron Technology Corporation, TFBGA 16χ16 (2216·001Α01)) Next, use the obtained 26 1331784 lS393pif.doc and then peel the sheet from the separator and cut it into a 2 mm □ back sheet. On the other hand, 'cut and vapor-deposit the aluminum wafer to make a length of 2 mm x 2 mm x 500 Μ. A wafer of rice. The wafer is bonded to a substrate to prepare a test piece. The die bond is applied at a temperature of 120 Torr (〇.25 MPa), and the film is heated for 1 second. S In the case of the lead frame (manufactured by Shinko Electric Co., Ltd., trade name: CA-F313 (MF202)), a test piece was produced in the same manner as in the case of the substrate. After the obtained sheet was peeled off from the separator, it was cut into a 6 mm □ succeeding sheet. On the wafer pad of the lead frame (Shincon Electric Co., Ltd., trade name CA-F313 (MF202)), the die-cutting growth was 6 mm x width 6 mm x thickness 500. A wafer of a test element having a test pattern pattern formed by micron (manufactured by Phoenix, Inc., model: NT-103, passivation layer SbN4 / 5000 angstrom thick). Thereafter, a wafer having a length of 2 mm x a width of 2 mm x a thickness of 500 μm cut from a wafer on which aluminum was deposited was bonded to the test member using a back sheet in which the above-mentioned succeeding sheet was cut into a 2 mm opening to prepare a test piece. The die bond is carried out under the same conditions as in the case of the substrate and the lead frame. The measurement procedure of the shearing force is as follows. Each test piece is fixed on a hot plate capable of controlling temperature. 'The die-bonded semiconductor element is pressed in a push-pull gauge at a speed level of 0.1 mm/sec to measure the shear. Cut the force. The temperature of the heating plate was 80 ° C and 175, respectively. (:, at 250 ° C, the test was carried out. Also, Model-2252 (AI KOH Engineering Co., Ltd. 27 1331784 15393 pif. doc) was used as the test device. Moreover, after the die bonding, the sample was not heated. Further, in the case of a semiconductor device, when a shear adhesion force was measured, a semiconductor element of 2 mm □ vapor-deposited aluminum was pressed with a push-pull gauge to measure the shear adhesion force. ~—The shearing force without the heating process (MPa) ****—, the lead frame substrate semiconductor element 棹力11 hot plate temperature^(°C) 80 175 250 80 175 250 80 175 250 way test 1 0.4 0.3 0.2 0.4 0.3 0.2 0.5 0.4 (η 检 检 2 2 0.5 0.4 0.3 0.4 0.3 0.2 0.6 0.4 0.4 λ and comparison example 1 0 0 0 0 0 0 0 0 0 soil comparison example 2 0 0 0 0 0 0 0 0 0 As shown in Table 1, the adhesive sheets of Experimental Example 1 and Experimental Example 2 showed a shearing force of 大于 2 MPa or more at any temperature. In addition, shearing of the adhesive sheets of Comparative Example 1 and Comparative Example 2 Then the force is [wire bonding] ... using the above-mentioned examples and comparative examples, the test piece is used for testing. In the case of an element, a lead frame, a substrate, or a semiconductor element, first, various samples were prepared for the substrate, the lead frame, and the semiconductor element. 28 1331784 15393pif.doc On a substrate (manufactured by UniMicron Technology Corporation, trade name TFBGA 16xl6 (2216-001A01) In the case of )), the obtained back sheet was peeled off from the separator, and then cut into 2 mm □ of the succeeding sheet. On the other hand, the wafer on which aluminum was deposited was cut to have a length of 2 mm x 2 mm x a thickness of 500 μm. Wafer. The wafer was bonded to a substrate to prepare a test piece. The bonded crystal was applied at a temperature of 120 C (〇 _ 25 MPa), and heated for 1 second, using a die-bonding machine ((share) Shinkawa SPA- 300) In the case of a lead frame (manufactured by Shinko Electric Co., Ltd., trade name CA_F313 (MF202)), the obtained back sheet was peeled off from the separated state, and then cut into a 7.5 mm opening. A wafer having a length of 7.5 mm x 7.5 mm wide and a thickness of 500 μm is fabricated by cutting a wafer having a thickness of 7.5 mm x 750 mm thick. The test piece is bonded to the substrate to form a test piece. The die bond is in the same condition as in the case of the substrate. Enter Moreover, in the case of a semiconductor element, using the resulting separator is then peeled back sheet k, then the sheet is cut into 6mm □. On the wafer pad of the lead frame (Shin-Guang Electric Co., Ltd. 'product name CA_F313 (MF2〇2)), the die-cutting chip having a test element for measuring the pattern pattern of 5 is formed by a 6 mm x 6 mm x 1 mm thick film. (Phoenix · Semiconductor), model: NT_1〇3, passivation layer Si3N4 / 5000 angstroms thick). After the test element is used as the first semiconductor element, the above-mentioned succeeding film is used to form a slab of the slab, and the long-plus-caffeine (10)-thick micron-grain crystal cut by the wafer of the mine has been used for the above test. The component is used to make a test piece. This wafer is used as a second semiconductor element. Moreover, 'two pieces were made for each sample. 29 15393pif.doc Combined with 2, n〇r ^ Q pressure port, the degree is 80〇c, 175〇C, combined with the device, in addition, as UTC. ((share) Xinchuan company) as a line to pass, set, Outside ★ ^ The success rate of the joint is judged to be successful by using the tensiometer into the ^^曰% field force strength of 5 § or more. Moreover, :: The heating process of the sample is performed. Further, in the semiconductor element, the semiconductor element is bonded to the lead frame. The results are shown in Table 2. Table 2 - One ~ Dad's hot process wire bonding success rate f Lead frame substrate semiconductor component heating plate temperature CC) 80 175 250 80 175 250 80 175 250 Experimental example 1 100 100 100 100 100 100 100 100 100 Experimental example 2 100 — 100 100 100 100 100 100 100 100 Comparative Example 1 0 0 0 0 0 0 0 0 0 Comparative Example 2 0 0 0 0 0 0 0 0 0 As shown in Table 2, the experimental sheets of Experimental Example 1 and Experimental Example 2, The success rate is 1% at any temperature. On the other hand, the success rates of the laminates of Comparative Example 1 and Comparative Example 2 were both 0%. Experimental Example 1 and Experimental Example 2 The success rate of the succeeding film of 1331784 15393pif.doc was 100%, and each had a sufficient shearing force, so that variations in wafers were less likely to occur. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A to FIG. 1C are flowcharts showing a method of manufacturing a semiconductor device according to a first embodiment of the present invention. FIG. 2A to FIG. 2E are diagrams showing a method of manufacturing a semiconductor device according to a second embodiment of the present invention. Flow chart. 3A to 3G are flowcharts showing a method of manufacturing a semiconductor device according to Embodiment 3 of the present invention. 4A to 4E are flowcharts showing a method of manufacturing a semiconductor device according to Embodiment 4 of the present invention. 5A to 5E are flowcharts showing a method of manufacturing a semiconductor device according to Embodiment 5 of the present invention. 6A to 6C are flowcharts showing a method of manufacturing a semiconductor device according to Embodiment 6 of the present invention. Fig. 7 is a schematic cross-sectional view showing a semiconductor device obtained by a method of manufacturing a semiconductor device according to a sixth embodiment of the present invention. 8A to 8B are flowcharts showing a method of manufacturing a semiconductor crack according to Embodiment 7 of the present invention. [Description of main component symbols] 1331784 15393pif.doc 11 : Substrate 12, 12', 14, 3, 4, 41': Next sheet 13, 32: Semiconductor element 13': Semiconductor wafer 15: Package resin 16: Bonding wire 21: clearance pad 33: dicing tape 42, 42': core material

3232

Claims (1)

lS393pif.doc 爲第 93135056 1 號中文專利範圍細線修正本 、申請專利範圍： ___.修正臼期:99年3月30日 1]年3月細修正^胃 蚀一^種半導體裝置的製造方法，包括：透過—接菩片 半導體轉暫_著在—難著體上之 J ’不經過加熱製程，進行打線接合之一打線 接著力為大於等時㈣時的剪切 笨紛樹lS393pif.doc is the fine line revision of the Chinese patent scope of No. 93135056 1 , the scope of application for patents: ___. Revision period: March 30, 1999, March 1st, March, fine correction, ^ Eclipse, a manufacturing method of semiconductor devices, Including: through the - connected to the semiconductor semiconductor transfer _ in the - difficult body J ' without heating process, one of the wire bonding, the line is then greater than the time (four) when the cut stupid tree έ接著片自Θ烯酸g旨樹脂、—環氧樹脂、一 脂及一交聯劑形成， 該環氧樹脂與該苯朌樹脂之摻合比 當量，摻合該麵樹“的 苯：：:==:，’該環氧樹_ 旦3 n 1(η量份之該㈣酸酯樹脂，較聯劑的添加 里疋U.U5〜7重量份。 2. 如申sf專利II®第1項所述之半導财置的製造方 法’其中該被接著體包括基板、引線框架或半導體元件。 3. 如申請專利範圍第！項所述之半導體裝置的製造方 法，更包括由-封賴脂封裝該半導體元件之—封裝製程 與進 &lt;于該封裝樹脂之後硬化的一後硬化製程； 其中在該封裳製程及/或該後硬化製程中，藉由加敎以 硬化該封裝樹脂’同時藉由該接著片使該半導體元愈 被接著體黏著在一起。 Θ 4.如申請專利範圍第2項所述之半導體裝置的製造方 33 1331784 15393pif.doc ------- 打年5月沁日修正替换頁 法，其中在賴接著體為半㈣元件的情況下，包括在該 半導體元件無半導體元件之間，透賴接料堆疊一間 隔塾的-堆疊製程，該接著片的對該間隔墊或該半導體元 件的暫時黏著時的剪切接著力為大於等於Q 2Mpa。 、、5.如巾請專利範圍第4項所述之半導體褒置的製造方 法，其中在該封裝製程及/或該後硬化製程中，利用加熱使 該封裝樹脂硬化，_透過雜著肢該半導體元件與該 間隔塾黏著在一起。 6. 如申請專利範圍第1項所述之半導體裝置的製造方 法，其中該打線接合製程包括在^^〜^(^^之溫度中進 行。 7. 種接者片，係為在包括透過一接著片使一半導體 70件暫時黏著在一被接著體上之一暫時黏著製程；以及不 經過加熱製程，進行打線接合之一打線接合製程的一半導 體裝置之製造方法中所使用之該接著#，其特徵在於該接 著片對該被接著體的暫時黏著時的剪切接著力為大於等於 0.2MPa， 、 、 該接著片由一丙烯酸酯樹脂、一環氧樹脂、一苯酚樹 脂及一交聯劑形成， 該環氧樹脂與該苯酚樹脂之摻合比例，對於該環氧樹 脂成分中之環氧基1當量，摻合該苯酚樹脂中的羥基05 〜2.0當量， 二土 . 對於100重量份的該丙烯酸醋樹脂，該環氧樹脂與該 苯酚樹脂的混合量為100〜200重量份， 34 1331784 15393pif.d〇c |n年;月》〇; 修正替換頁 對於100重量份之該丙烯酸酯樹脂，該交聯劑的添加 量是0.05〜7重量份。 ^ 8.一種半導體裝置，係為由包括透過一接著片使一半 V體元件暫時黏著在一被接著體上之一暫時黏著製程；以 及不經過加熱製程，進行打線接合之打線接合製程，其中 所使用的上述接著片對被接著體的暫時黏著時的剪切接著 力為大於等於〇.2MPa的一半導體裝置之製造方法所得 的半導體裝置， 該接著片由一丙烯酸酯樹脂、一環氧樹脂、一笨酚 脂及一交聯劑形成， 該環氧樹脂與該苯酚樹脂之摻合比例，對於該環氧樹 脂成分中之環氧基丨當量，摻合該苯酚樹脂中的某/ 〜2.0當量， 工土 υ.) 該環氧樹脂與該 該交聯劑的添加 對於100重量份的該丙烯酸酯樹脂 苯酚樹脂的混合量為1〇〇〜2〇〇重量份， 對於100重量份之該丙烯酸酯樹脂 量是0.05〜7重量份。 35The ruthenium film is formed from a decenoic acid-based resin, an epoxy resin, a mono-ester and a cross-linking agent, and the epoxy resin is blended with the phenylhydrazine resin in an equivalent ratio to blend the benzene of the noodle tree: :==:, 'The epoxy tree _ 3 n 1 (n the amount of the (tetra) ester resin, compared with the addition of the joint agent U.U5~7 parts by weight. 2. If the application sf patent II® A method of manufacturing a semiconductor package according to the invention, wherein the substrate is a substrate, a lead frame, or a semiconductor device. 3. The method for manufacturing a semiconductor device according to the above-mentioned a post-hardening process for encapsulating the semiconductor device by encapsulating the semiconductor device; wherein in the sealing process and/or the post-hardening process, the encapsulating resin is cured by twisting 'At the same time, the semiconductor element is adhered to the bonding body by the bonding sheet. Θ 4. The manufacturing method of the semiconductor device according to the second aspect of the patent application 33 1331784 15393pif.doc ------- The replacement page method was amended on the following day of May, in which the case of the half (four) component Between the semiconductor element and the semiconductor element, the splicing stack is stacked with a spacer-stacking process, and the bonding force of the bonding pad to the spacer or the semiconductor element is temporarily greater than or equal to Q The method for manufacturing a semiconductor device according to the fourth aspect of the invention, wherein the encapsulating resin is hardened by heating in the encapsulation process and/or the post-hardening process, The semiconductor device is bonded to the spacer. The method of fabricating the semiconductor device according to claim 1, wherein the wire bonding process is performed at a temperature of ^^~^(^^. The connector piece is a temporary bonding process including temporarily bonding a semiconductor 70 piece to a bonded body through a bonding piece; and a semiconductor bonding process by wire bonding without a heating process The following # used in the method of manufacturing the device, characterized in that the shearing force at the time of temporary adhesion of the adhesive sheet to the adherend is 0.2 MPa or more, The adhesive sheet is formed of an acrylate resin, an epoxy resin, a phenol resin and a crosslinking agent, and the ratio of the epoxy resin to the phenol resin is selected for the epoxy group in the epoxy resin component. Equivalent, blending the hydroxyl group in the phenol resin 05 to 2.0 equivalents, two soil. For 100 parts by weight of the acrylic vinegar resin, the epoxy resin and the phenol resin are mixed in an amount of 100 to 200 parts by weight, 34 1331784 15393 pif. D〇c | n years; month 〇; correction replacement page For 100 parts by weight of the acrylate resin, the crosslinking agent is added in an amount of 0.05 to 7 parts by weight. ^ 8. A semiconductor device comprising: a temporary bonding process comprising temporarily bonding a half of a V body element through a back sheet to a substrate; and a wire bonding process for bonding the wire without a heating process, wherein The semiconductor device obtained by the method for manufacturing a semiconductor device having a shear bonding force of the above-mentioned adhesive sheet to be temporarily adhered to the adherend is 0.02 MPa or more, the adhesive sheet comprising an acrylate resin, an epoxy resin, a phenolic fat and a crosslinking agent are formed, the blending ratio of the epoxy resin and the phenol resin, and a certain amount of the epoxy resin equivalent in the epoxy resin component is blended with /2.0 equivalents in the phenol resin , the work of the binder. The addition of the epoxy resin and the crosslinking agent is 100 parts by weight of the acrylate resin phenol resin in an amount of 1 〇〇 2 2 parts by weight, and 100 parts by weight of the acrylic acid. The amount of the ester resin is 0.05 to 7 parts by weight. 35
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