TWI329892B - - Google Patents

Download PDF

Info

Publication number
TWI329892B
TWI329892B TW096111782A TW96111782A TWI329892B TW I329892 B TWI329892 B TW I329892B TW 096111782 A TW096111782 A TW 096111782A TW 96111782 A TW96111782 A TW 96111782A TW I329892 B TWI329892 B TW I329892B
Authority
TW
Taiwan
Prior art keywords
ion beam
ion
axis direction
detector
axis
Prior art date
Application number
TW096111782A
Other languages
English (en)
Chinese (zh)
Other versions
TW200746270A (en
Inventor
Matsumoto Takeshi
Ando Yasunori
Original Assignee
Nissin Ion Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Ion Equipment Co Ltd filed Critical Nissin Ion Equipment Co Ltd
Publication of TW200746270A publication Critical patent/TW200746270A/zh
Application granted granted Critical
Publication of TWI329892B publication Critical patent/TWI329892B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Measurement Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
TW096111782A 2006-04-04 2007-04-03 Device and method for measuring ion beam, and ion beam irradiation device TW200746270A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006103185A JP4151703B2 (ja) 2006-04-04 2006-04-04 イオンビーム測定装置、測定方法およびイオンビーム照射装置

Publications (2)

Publication Number Publication Date
TW200746270A TW200746270A (en) 2007-12-16
TWI329892B true TWI329892B (ja) 2010-09-01

Family

ID=38680352

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096111782A TW200746270A (en) 2006-04-04 2007-04-03 Device and method for measuring ion beam, and ion beam irradiation device

Country Status (4)

Country Link
JP (1) JP4151703B2 (ja)
KR (1) KR100865507B1 (ja)
CN (1) CN100565246C (ja)
TW (1) TW200746270A (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009217980A (ja) * 2008-03-07 2009-09-24 Nissin Ion Equipment Co Ltd イオン源の電圧決定方法
KR100978793B1 (ko) 2008-11-19 2010-08-30 한국원자력연구원 다중 전극을 이용한 저에너지·대전류·대면적 빔 제조 장치 및 수송 장치
CN103576468B (zh) * 2012-08-10 2016-03-09 北京京东方光电科技有限公司 一种曝光设备及其挡板控制方法
JP6253524B2 (ja) 2014-06-13 2017-12-27 住友重機械イオンテクノロジー株式会社 ビーム照射装置及びビーム照射方法
JP6581520B2 (ja) * 2016-02-09 2019-09-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置
JP6579985B2 (ja) * 2016-03-18 2019-09-25 住友重機械イオンテクノロジー株式会社 イオン注入装置および測定装置
JP6720861B2 (ja) 2016-12-28 2020-07-08 株式会社ニューフレアテクノロジー マルチビーム用アパーチャセット及びマルチ荷電粒子ビーム描画装置
CN111769027A (zh) * 2019-04-02 2020-10-13 北京中科信电子装备有限公司 一种束流竖直方向角度的测量装置及方法
CN111769030A (zh) * 2019-04-02 2020-10-13 北京中科信电子装备有限公司 一种束流竖直方向密度分布的测量装置及方法
CN110694186B (zh) * 2019-09-20 2020-11-17 华中科技大学 基于硬件高斯拟合粒子束束斑位置的计算机可读存储介质

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246298A (ja) 2001-02-20 2002-08-30 Nikon Corp 荷電粒子線露光装置の結像性能の評価方法及び荷電粒子線露光装置
US20040149926A1 (en) 2002-12-11 2004-08-05 Purser Kenneth H. Emittance measuring device for ion beams
JP2004205223A (ja) 2002-12-20 2004-07-22 Chi Mei Electronics Corp イオンビーム分布検出装置およびこれを用いたイオンビーム配向処理装置
JP2005056698A (ja) 2003-08-05 2005-03-03 Seiko Epson Corp イオン注入装置及びイオンビームエミッタンス測定器、半導体装置の製造方法
JP2005197335A (ja) 2004-01-05 2005-07-21 Nikon Corp 荷電粒子線露光装置の結像性能の計測方法、調整方法及び荷電粒子線露光装置
JP2005317412A (ja) 2004-04-30 2005-11-10 Riipuru:Kk 電子ビームの強度分布測定方法及び強度分布測定装置

Also Published As

Publication number Publication date
CN100565246C (zh) 2009-12-02
KR20070099480A (ko) 2007-10-09
JP4151703B2 (ja) 2008-09-17
JP2007278755A (ja) 2007-10-25
TW200746270A (en) 2007-12-16
CN101051086A (zh) 2007-10-10
KR100865507B1 (ko) 2008-10-29

Similar Documents

Publication Publication Date Title
TWI329892B (ja)
US10014148B2 (en) Electron source, X-ray source and device using the X-ray source
TWI626674B (zh) Ion beam measuring device, ion implantation device and ion beam measuring method
TWI756210B (zh) 離子植入裝置及測定裝置
JP5913745B2 (ja) 粉末プラズマ処理装置
JP2004510963A (ja) 平面ビーム放射線撮影のための装置および放射線源に対する電離放射線検出器の整合方法
JP2013170941A (ja) 試料作製方法及び装置
JP5181824B2 (ja) イオンビーム照射装置及びイオンビーム測定方法
US10825648B2 (en) Studying dynamic specimens in a transmission charged particle microscope
US20170052264A1 (en) Novel acquisition and processing of data in a tomographic imaging apparatus
TWI648762B (zh) Ion beam irradiation device
JP2008180647A (ja) マイクロメッシュを用いたピクセル型電極によるガス放射線検出器
JP2013217898A (ja) 試料作製装置及び試料作製方法
TW200924032A (en) Ion beam irradiation method and ion beam irradiation device
JP2011247602A (ja) 高抵抗電極を用いたピクセル型電極による粒子線画像検出器
TWI466178B (zh) 離子植入系統
JP2018049809A (ja) ビーム電流計測器、荷電粒子ビーム照射装置
JP5949257B2 (ja) 配線加工方法
KR20230017313A (ko) 높은 각도 추출 광학부들을 포함하는 프로세싱 시스템 및 추출 어셈블리
JP7152757B2 (ja) 試料加工観察方法
JP7132828B2 (ja) イオン注入装置およびビームパーク装置
TW201637060A (zh) 訊號帶電粒子偏斜裝置、訊號帶電粒子偵測系統、帶電粒子束裝置以及偵測訊號帶電粒子束的方法
KR101648080B1 (ko) 레이저유도 플라즈마에서 방출된 이온에너지의 시공간적 특성 분석 장치 및 분석방법
JP7214262B2 (ja) 荷電粒子ビーム装置、試料加工方法
KR101471892B1 (ko) 방사선 프로파일 시스템

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees