TWI329892B

TWI329892B -

Info

Publication number: TWI329892B
Application number: TW096111782A
Authority: TW
Inventors: Matsumoto Takeshi; Ando Yasunori
Original assignee: Nissin Ion Equipment Co Ltd
Priority date: 2006-04-04
Filing date: 2007-04-03
Publication date: 2010-09-01
Also published as: CN100565246C; KR20070099480A; JP4151703B2; JP2007278755A; TW200746270A; CN101051086A; KR100865507B1

Description

1329892 九、發明說明：【發明所屬之技術領域】板ί發1=吏：於將從離子源導出的離子束照射於基冊奸「H 諸如離子植心離子摻雜（日本註 ”離子研磨、離子束银刻、離子束配向處理等處理的離子束照射裝置等之中，以的離子束測定裝置、離子束測定方法、及八有該離子束測定裝置的離子束照射裝置。【先前技術】 ::子：導出之離子束的發散角度等特性之測定，例如在對基板施仃良好均勻性處理等方面，屬於重要事項。測定離子权發散肖度Μ裝i，f 文 =中所記載者。該等測定裝置使料有使離子束通過之幵口：屏蔽板、以及具有複數檢測器(例如法拉第杯 (=ay CUP)、檢測電極等)的檢測器單元，而測朿的發散角度等。 [專利文獻1]日本專利特開2004_20522 0043-0054，圖卜圖 4) ^ [專利文獻2]日本專利特開·5_5_ 0017-0019 ，圖 2) ^ 【發明内容】 (發明所欲解決之問題）上述習知測定裝置均屬於對從具有多孔電極（其係具有複數離子導出孔）的離子源中所導出之離子束，測定其特 312XP/發明說明書(補件)/96-07/96111782 !·生(例如發散角幻時’測定將從複數離子導出孔所射出之離子束混雜而成的離子束之總和，並求取當從離子導出孔射出時之離子束所具有的發散角度’因而必須針對所測得的總和施行諸如摺積積分（Solution Integral，例如 | 1 +段落G()46、_7)等複雜數學式之運算，理。一般而言，因為此種運算處理較為複雜，因而在運异，，要長的時間，故成為實用上的阻礙因素。爰是，本發明主要目的在於提供不需要複雜的運算處 T便可對從具有多孔電極的離子源之離子導出孔中射出時之離子束，敎其所具有之特性的裝置及方法。 (解決問題之手段）本發明的第1離子束測定裝置，將在一點處相互呈正交的三個軸設定為x軸、y轴及z轴之下，係對從具有多孔電木的離子源’測义沿z軸方向導出的離子束之空間分佈的裝置，而該多孔電極係沿xy平面的電極，且至少在沿 X轴方向上，依實質等間隔具有相互實質相離子導出孔；具備有：屏蔽板，其沿xy平面而位於上述離子源之下游侧，並具有使上述離子束其中一部分通過的開口；檢測器，其位於上述屏蔽板之下游側，檢測通過上述屏蔽板開口的離子束之離子束電流；以及檢測器驅動H其具有使上述檢測n橫跨上述屏蔽板開口之下游部，並沿X軸方向移動的機能； 312XP/發明說明書(補件)/96.〇猶11782 1329892 為L，將九述Γ孔電極與檢測器間沿2軸方向的距離設 2將上述制板與檢測H㈣2財向的距離設為d，蔽板η X抽方向的間隔設為P，將上述屏口沿：軸方向的尺寸設為b，將上述檢測器沿X軸。、尺寸&為w ’便滿足下式之關係、或滿足與該式在數學上等效之關係。、 [數式1] {w(L-d)+bL}/d<(p-a) 依照該離子束敎裝置，藉由滿足上述數式丨的關係，從複數離子導出孔中所射出的離子束便不會同時入射於檢測器’對單—測定位置處，僅有從單—離子導出孔中所射出之離子束人射。所以，使用上述檢測器所測得之離子束的空間分佈’成為依序測定從一個離子導出孔所射出之離子束的結果之連續。 #根據該離子束測定裝置’因為可測定如上述的離子束之空間分佈，因而並不需要摺積積分等複雜的運算處理，可簡單地測定從多孔電極的離子導出孔中射出時，離子束所具有特性。亦可取代上述檢測器與檢測器驅動裝置，改為使用位於屏蔽板下游側，具備有檢測H的檢測器單元，該檢測器係檢測通過屏蔽板開口的離子束之離子束電流的檢測器，並具有沿X軸方向排列且相互實f相同大小的複數檢測器。此情況下，即便未使檢測器單元移動，仍可測定如 312XP/發明說明書(補件)/9647/96111782 7 1^29892 上述的離子束之空間分佈。離子相定裝置具備有：屏蔽板，其沿子束Λ 料狀τ游側，㈣料使上述離相ni I / 的開口，而至少沿Χ轴方向相互實質相问大小的複數開口；只貝檢測器，其位於上述屏蔽板下游板開口的離子束之離子束電流；錢 α上述屏敗檢^驅動裝置，其具有使上述檢測器橫跨上述屏蔽板幵1 口的下游部，並沿χ軸方向移動的機能；若將上述多孔電極與檢測器間沿ζ軸方向的距離設為L，將上述屏蔽板與檢測器間沿2軸方向的距離，將上述多孔電極的各離子導出孔沿χ軸方向的尺寸 a’將該離子導出孔沿χ軸方向的間隔設為ρ，將上^屏蔽板開口沿χ軸方向的尺寸設為b，將上述檢測器沿义軸方向的尺找為w，便滿足上述數式丨的_ 在數學上等效的關係； /、該式且，上述距離d較小於通過上述屏蔽板複數開口的離子束而同時入射於上述檢測器中的距離。該離子束測定裝置之屏蔽板雖具有複數開口，但是因為將距離d設定為較小於通過複數開口的離子束而同時二射於檢測器中的距離，因而就屏蔽板的各開口，可達如同上述第1離子束測定裝置的相同作用。結果，可在複數地方測定離子束的空間分佈。當屏蔽板具有複數開口時，亦可具備有複數檢測器與檢 312XP/發明說明書(補件)/96-07/96111782 8 UZ9892 測器驅動裝置。該等複數檢測器位於屏蔽板之下游側，且依與屏蔽板開口實質相同的間隔沿X軸方向排列。該檢測盗驅動裝置具有使該等橫跨屏蔽板所對應之開口的下游邰，並朝沿X軸方向整合而移動的機能。亦可取代上述檢測器與檢測器驅動裝置，改為使用分別位於屏蔽板各開口之下游部，且具備有分別檢測通過屏蔽板各開口的離子束之離子束電流的複數檢測器單元。各檢測器單元檢測通過屏蔽板開口的離子束之離子束電流，並 *別具有朝沿X軸方向排列且相互實質相同檢測器。亦可具備有一個如上述的檢測器單元·以及檢測器單元驅動裝置’其具有使該檢測器單元沿x轴方向移動，並使檢測器單元依序位於屏蔽板的複數開口之下游部之機能。 —月的，1離子束測定方法’使用如上述的離子束測疋、’測定從上述離子源導出的離子束在沿义軸方向上 =間分佈，將依照該測定所獲得的空間分佈利用高斯分近’而求得該高斯分佈的標準差σ，使用該標準差 :數= ra、上述距離1及距離d，根據下式或與其 3 的式子，求取上述離子束在沿X轴方向上的 [數式2] Θ =tan'1( σ /d-a/2L) 一：：月的第2，子束測定方法，使用如上述的離子束測疋裝置’測定從上述離子源導出的離子束在沿又轴方向上 312XP/發明說明書(補件)/96·〇7腕η 782 9 1329892 的空間分佈，將依照該測定所獲得的空間分佈利用高斯分1329892 IX. Description of the invention: [Technical field to which the invention pertains] Plate ί hair 1 = 吏: The ion beam derived from the ion source is irradiated to the base book "H such as ion-implanted ion doping (Japan injection) ion milling, An ion beam measuring apparatus, an ion beam measuring method, and an ion beam irradiating apparatus having the ion beam measuring apparatus, among ion beam irradiation apparatuses such as ion beam silver etching and ion beam alignment processing, etc. [Prior Art] ::Sub-measurement of the characteristics such as the divergence angle of the derived ion beam, for example, in the case of good uniformity treatment on the substrate, etc. It is an important matter to measure the ion-weight divergence of the ion-distribution i, f text = The measuring device is configured to have a pass for passing an ion beam: a shield plate, and a detector unit having a plurality of detectors (for example, a Faraday cup (=ay CUP), a detecting electrode, etc.), and measuring a divergence angle, etc. [Patent Document 1] Japanese Patent Laid-Open No. 2004-20522 0043-0054, FIG. 4) ^ [Patent Document 2] Japanese Patent Laid-Open No. 5_5_0017-0019, FIG. 2) ^ [Summary of the Invention] ask The above-mentioned conventional measuring devices belong to an ion beam derived from an ion source having a porous electrode having a plurality of ion-extracting holes, and the measurement thereof is 312XP/invention specification (supplement)/96-07/96111782 The raw (for example, the divergence angle illusion 'measures the sum of the ion beams from which the ion beams emitted from the complex ion deriving holes are mixed, and obtains the divergence angle of the ion beam when ejected from the ion deriving holes' Therefore, it is necessary to perform calculations of complicated mathematical expressions such as a solution integral (Solution Integral, for example, 1 + paragraph G() 46, _7) for the measured sum. Generally, because such arithmetic processing is complicated, Therefore, it takes a long time to become a practical obstacle. Therefore, the main object of the present invention is to provide an ion-extracting hole from an ion source having a porous electrode without requiring a complicated operation T. The apparatus and method for the characteristics of the ion beam at the time of injection. (Means for Solving the Problem) The first ion beam measuring apparatus of the present invention has three axial axes orthogonal to each other at one point. Described below the x-axis, the y-axis, and the z-axis, means for measuring the spatial distribution of the ion beam derived from the ion source of the porous bakelite along the z-axis direction, and the porous electrode is an electrode along the xy plane And at least in the X-axis direction, having substantially opposite phase ion-extracting holes at substantially equal intervals; comprising: a shielding plate located on a downstream side of the ion source along an xy plane, and having a portion of the ion beam passing through a detector; the detector is located on a downstream side of the shielding plate to detect an ion beam current of an ion beam passing through the opening of the shielding plate; and the detector driving H has a downstream portion of the opening of the shielding plate And the function of moving along the X-axis direction; 312XP / invention manual (supplement) / 96. 〇 11 11782 1329892 is L, the distance between the boring electrode and the detector in the direction of the 2 axis is set to 2 The distance for detecting the H (four) 2 fiscal direction is set to d, the interval of the mask η X extraction direction is P, the dimension of the screen opening in the axial direction is b, and the detector is along the X axis. , size & w ′ satisfies the relationship of the following formula, or satisfies the mathematically equivalent relationship with the formula. [Expression 1] {w(Ld)+bL}/d<(pa) According to the ion beam enthalpy device, the ion beam emitted from the plurality of ion deriving holes is not satisfied by satisfying the relationship of the above equation 丨At the same time, it will be incident on the detector's single-measurement position, and only the ion beam emitted from the single-ion extraction hole will be emitted. Therefore, the spatial distribution of the ion beam measured by using the above detector becomes a continuation of the result of sequentially measuring the ion beam emitted from one ion deriving hole. According to the ion beam measuring apparatus, since the spatial distribution of the ion beam as described above can be measured, complicated calculation processing such as folding integration is not required, and the ion beam can be easily measured when ejected from the ion-extracting hole of the porous electrode. Has characteristics. Alternatively, instead of the above detector and detector driving device, a detector unit located on the downstream side of the shielding plate and having detection H, which is a detector for detecting the ion beam current of the ion beam passing through the opening of the shielding plate, may be used instead. And having a complex detector arranged in the X-axis direction and having the same size as each other. In this case, the spatial distribution of the ion beam as described above in 312XP/Invention Manual (Supplement)/9647/96111782 7 1^29892 can be measured even if the detector unit is not moved. The ion phase determining device is provided with: a shielding plate which is along the side of the beam of the beam, and (4) a plurality of openings which are made to make the above-mentioned phase out of the ni I / and at least substantially parallel to each other in the direction of the x-axis; a detector, the ion beam current of the ion beam located at the opening of the downstream plate of the shielding plate; the above-mentioned screen failure detecting driving device, wherein the detector has a downstream portion of the shielding plate 幵1, and along the χ The function of moving in the axial direction; if the distance between the porous electrode and the detector in the x-axis direction is L, the distance between the shield plate and the detector in the direction of the two axes is such that each ion of the porous electrode is led out The dimension a' in the x-axis direction is ρ in the x-axis direction, the size of the upper shield opening in the x-axis direction is b, and the ruler in the sense axis direction is w, satisfying the mathematically equivalent relationship of the above formula /; /, the distance d is smaller than the distance simultaneously incident on the detector by the ion beam of the plurality of openings of the shield plate. Although the shielding plate of the ion beam measuring device has a plurality of openings, since the distance d is set smaller than the distance of the ion beam passing through the plurality of openings and simultaneously polarized in the detector, the openings of the shielding plate can be reached. The same effect as the first ion beam measuring device described above. As a result, the spatial distribution of the ion beam can be determined in a plurality of places. When the shielding plate has a plurality of openings, it may also be provided with a plurality of detectors and inspections 312XP/invention manual (supplement)/96-07/96111782 8 UZ9892 detector driving device. The plurality of detectors are located on the downstream side of the shield plate and are arranged in the X-axis direction at substantially the same intervals as the shield plate openings. The detection drive device has a function of moving the downstream 邰 across the opening corresponding to the shield plate and moving in the X-axis direction. Instead of the above detector and detector driving means, a plurality of detector units respectively located at the downstream portions of the openings of the shield plate and having ion beam currents respectively detecting the ion beams passing through the respective openings of the shield plate may be used. Each of the detector units detects the ion beam current of the ion beam passing through the opening of the shield plate, and * has a detector which is arranged in the X-axis direction and substantially identical to each other. There may be provided a detector unit as described above and a detector unit driving device having the function of moving the detector unit in the x-axis direction and sequentially positioning the detector unit at a downstream portion of the plurality of openings of the shield plate. . - month, 1 ion beam measurement method 'Using the ion beam measurement as described above, 'measuring the ion beam derived from the above ion source in the direction of the sense axis = the distribution between the two, the spatial distribution obtained according to the measurement using Gauss The standard deviation σ of the Gaussian distribution is obtained, and the standard deviation is used: the number = ra, the distance 1 and the distance d, and the ion beam is obtained along the X-axis according to the following formula or the equation of 3 [Formula 2] Θ = tan'1 ( σ /da / 2L) One:: the second of the month, the beamlet measurement method, using the ion beam measuring device as described above to measure the ions derived from the above ion source The spatial distribution of the beam in the direction of the axis 312XP/invention specification (supplement)/96·〇7 wrist η 782 9 1329892, using the Gaussian distribution according to the spatial distribution obtained by the measurement

佈趨近’而求得該高斯分怖的尖峰值X座標Xq，使用該X 座標Χο、在測定上述空間分佈時所使用的屏蔽板開口中心 X座標xs、及上述距離d，根據下式或與其在數學上等效的式子，求取上述離子束在沿x軸方向上的偏差角度α。 [數式3] a =tan',{(x〇-Xs)/d} 本發明的離子束照射裝置具備有：離子源、基板驅動裝置、及如上述的離子束測定裝置；而，該離子源在將在一點處相互呈正交的三個軸設定為χ軸、y轴及z轴之下，具備有作為沿xy平面的電極，而至少在沿χ軸方向上依 :質等間隔具有相互實質相同大小的複數離子導出孔之多孔電極，並將形成沿χ軸方向的尺寸大於沿7軸方向尺 :之截面形狀的離子束，朝沿ζ軸方向導出；該基板驅動 «置具有在從該離子源導出的離子束照射區域内，使基板沿y軸方向移動的機能。 (發明效果）夕根據申請專利第Μ所記載的發明，因為在從具有夕孔電極的離子源之複數離子導出孔射出的離子束，不合 ^入射於一個檢測器的狀態下’可測定離子束在沿Χ轴方向上的空間分佈’因而不需要摺理，可簡單地測定從多孔電等:雜的運算處子束所具有特性。電極的離子導出孔中射出時’離 ’除達成相同於根據申請專利範圍第2項所記載的發明 312ΧΡ/發明說明書(補件)/96.07/96111782 中誚專利範圍第1項&The cloth is approaching ' and the peak value X coordinate Xq of the Gaussian squad is obtained, and the X coordinate Χ ο, the center of the opening of the shield plate X used for measuring the spatial distribution, and the above distance d are used according to the following formula or The deviation angle α of the above-mentioned ion beam in the x-axis direction is obtained from the mathematically equivalent expression. [Expression 3] a = tan', {(x〇-Xs)/d} The ion beam irradiation apparatus of the present invention includes an ion source, a substrate driving device, and an ion beam measuring device as described above; The source is set to be below the x-axis, the y-axis, and the z-axis, and the three axes orthogonal to each other at one point are provided as electrodes along the xy plane, and at least in the zigzag direction at equal intervals. a plurality of ions of substantially the same size of the plurality of ion-extracting pores, and forming an ion beam having a size larger than a cross-sectional shape along the 7-axis direction in the direction of the x-axis, which is led toward the x-axis direction; The function of moving the substrate in the y-axis direction in the ion beam irradiation region derived from the ion source. (Effect of the Invention) According to the invention described in the Patent Application No., the ion beam emitted from the plurality of ion-extracting holes of the ion source having the sigmoid electrode is in a state in which it is incident on a detector. The spatial distribution in the direction along the x-axis does not require any cleavage, and the characteristics of the sub-beam from the porous electric or the like can be easily measured. When the ion-extracting hole of the electrode is emitted, the 'off' is achieved in the same manner as in the invention according to the second aspect of the patent application 312 ΧΡ / invention specification (supplement) / 96.07/96111782 诮 patent scope item 1 &

述的㈣。P 纽果之效果外，更可達成如T p，即便未使檢測器或檢測器單元沿χ =測定離子束的空間分佈。結果，因為不需Lt 外，&機械式驅動裝置，可達成構造的簡單化。此的時間需要該等移動的時間’因而可縮短測定所需要申專利範圍S 3項所記載的發明，除達成相同於述=範Γ1項的上述效果之效果外，更可達成如下的空間分佈β， x軸方向的複數地方，敎離子束 ^據巾4專㈣gl第4項所記載的發明申請專利範圍筮1馆认，咬取相冋於述的效果。即，可效果之效果外，更可達成如下在、/σ χ軸方向的複數地方，測定離子束 77 且’因為具有使複數檢測器及使該等整八 ^的檢測器驅動裝置’因而相較於使單-個檢測器：動的情況，可縮短測定所需要的時間。移動 =申:專利範圍第5項所記載的發明’除達成相同於 η月專利fe圍第1項的上述效果之效果外，、述的效果。S卩，-T+、尺'成如下 β在沿X軸方向的複數地方，測定離子束刀佈且因為即便未使檢測器或檢測器單、儿轴方向移動’仍可料離子束的空間分佈，因㈣需= 種移動用的機械式驅動裝置，可達成構造簡單化。， ^為不需要該等移動的時間，因而可縮短測定所需要的時 312ΧΡ/發明說明書(補件)/96·〇7/9611η82 11 1329892 申第6項所記載的發明，除達成相同於上述效果之效果外，更可達成如下述的效果。即，可在沿χ軸方向的複數地方，測的空間=。1’因為具備檢測料元、及使其依序早元驅動裝置，因而相較於使單一個檢的情況，可縮短測定所需要的時間。勖Said (four). In addition to the effect of P-Nu, it is possible to achieve, for example, Tp, even if the detector or detector unit is not measured along χ = spatial distribution of the ion beam. As a result, since the & mechanical drive unit is not required, the simplification of the construction can be achieved. This time requires the time of the movements', so that the invention described in the scope of claim S3 of the measurement can be shortened, and in addition to the effect of the above-described effect of the same item, the spatial distribution can be achieved as follows. In the complex area of the β and x-axis directions, the 申请 ion beam 据据 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 In other words, in addition to the effect of the effect, the ion beam 77 can be measured in a plurality of places in the /σ χ axis direction, and the "detector driving device for the complex detector and the device can be made" The time required for the measurement can be shortened compared to the case where the single detector is activated. Movement = Shen: The invention described in the fifth item of the patent range is the same as the effect of the above-described effect of the first item of the n-month patent. S卩, -T+, 尺' is as follows: β is measured at a plurality of places along the X-axis direction, and the ion beam is measured and the spatial distribution of the ion beam can be obtained because the detector or detector is not moved in the direction of the axis. The structure can be simplified because (4) requires a mechanical drive for moving. , ^ is the time required for such movement, so that the invention described in the sixth paragraph can be shortened when the measurement is required, except that the same as described above is achieved. In addition to the effect of the effect, the following effects can be achieved. That is, the space can be measured in a plurality of places along the x-axis direction. Since 1' has the detecting unit and the device is driven in the same order, the time required for the measurement can be shortened compared to the case of single detection.勖

根據申請專利範圍第7項所記載的發明，因為可在從具有多孔電極的離子源之複數離子導出孔巾射出的離^ 束，不會同時入射於-個檢測器的狀態了，敎離子束沿 X軸方向的空时佈’並根據該敎結果，敎離子束^ X軸方向的發散角度，因而不需要摺積積分等複雜的運；處理，可簡單地測定從多孔電極的離子導出孔中射離子束發散角度。 ^ 根據申請專利範圍f 8項所記載的發明，因為可在從具有多孔電極的離子源之複數離子導出孔中射出的離; #束，不會同時入射於一個檢測器的狀態下，測定離子束沿 X軸方向的空間分佈，並根據該測定結果，測定離子束沿 X軸方向的偏差角度，因而不需要摺積積分等複雜的運^ 處理，可簡單地測定從多孔電極的離子導出孔中射出時的離子束偏差角度。根據申請專利範圍第9項所記載的發明，因為具備有申請專利範圍帛1至6項中任-項所記載的離子束測定裝置’因而可達成相同於相對應之申請專利範圍的上述效果之效果。 312XP/發明說明書(補件)/96~07/96111782 12 1329892 【實施方式】一在本說明書及圖式中，為能面朝各機器表示出離子打進方向等，因而使用在一點處相互呈正交的三個轴，即 X軸、y軸及2軸。該x軸、y軸及Z軸只要是在一點處相互呈正交的轴便可，並未必僅褐限於圖示例的方向 =亦可將Z㈣垂直方向、水平方向、或傾斜於該等的方圖1所不係具備本發明之離子束測定裝置的離子束照 >射裝置之-實施形態的概略正視圖。該離子束照射裝置= 備有：離子源2、基板驅動裝置3G、及離子束測定裝置 4〇a。該離子源2將離子束1〇沿2軸方向導出。該基板驅動裝置3G具有在從該離子源2所導出的離子束照射區域内，使基板26與將其保持的支撐架28，一起朝箭頭b 所示沿y軸方向直線性移動的機能。該離子束測定裝置術測定從離子源2中導出的離子束1〇之空間分佈。離子束10的路徑保持於未圖示之真空容器内的真空環境中。二 < 兄在本說明書t，所謂「沿…的方向」係指例如平行或實質平行的方向，但也未必僅侷限於此。從離子源2中導出的離子束1〇，在本例中，如圖2所不，其沿X軸方向的尺寸大於沿y軸方向的尺寸並形成長方形形狀之截面，惟並不僅侷限於此。形成如本例形狀的離子束10,有稱之為絲帶狀、片狀或帶狀離子束。但，並非意指沿y軸方向的尺寸如紙般薄。 312χρ/發明說明書(補件)/96-07/96111782 13 離子源2具備有：產生電襞3的電漿3中利用電場的柞用而道 7 ^ 及從多孔電極出離子束1〇的多孔電極6。夕孔電極6在圖示例中有3#，惟並不僅侷限於此片以上的任意值。各多孔電極6沿xy平面配置。."、 =多孔電極6至少在沿X軸方向上，依實質等間隔p，離=實質相同尺寸a的複數(更具體而言係指多數) 離子導出孔8。各離子導出孔8係例如圓孔，惟並不僅侷限於此。例如 '、可在^ y軸方向上形成長狹縫狀。當各離子導出孔8係形成如圓孔的小孔時’各多孔電極6亦可在沿y軸方向上’亦依實料間隔具有相互實質相同尺寸的複數離子導 +離子束敎裝置術可在離子源2與基板26之間，測定從具有如上述多孔電極6的離子源2中沿z軸方向所導出之離子束1 〇的空間分佈（更具體係沿χ軸方向的空間分佈）另外，以下，在未言及沿y轴方向之下，即為於沿 X車由方向。離子束測定裝置40a在本實施形態中，具備有：屏蔽板 12、檢測器18、及檢測器驅動裝置24。該屏蔽板12位於離子源2之下游侧（從離子束行進方向觀看時的下游侧°以下亦同）’且具有使從離子源2導出的離子束1 〇其中一部分通過的一個開口 14。該檢測器18位於該屏蔽板 12的下游側’並檢測通過屏蔽板a之開口 14的離子束 10之離子束電流（換言之係施行測定。以下，亦同）。該 312XP/發明說明書(補件)/96-07/96111782 14 1329892According to the invention of claim 7, the ion beam emitted from the plurality of ions from the ion source having the porous electrode can be prevented from being incident on the detector at the same time. According to the result of the 敎, the 敎敎 ion beam is divergent angle in the X-axis direction, so that complicated integration such as folding integration is not required; The ion beam divergence angle. ^ According to the invention described in claim 8 of the patent application, since the ion beam can be ejected from the plurality of ion-extracting holes of the ion source having the porous electrode; the beam is not simultaneously incident on a detector, and the ion is measured. The spatial distribution of the beam along the X-axis direction, and the deviation angle of the ion beam along the X-axis direction is measured based on the measurement result, so that complicated processing such as folding integration is not required, and the ion-extracting hole from the porous electrode can be easily measured. The angle of the ion beam deviation when it is emitted. According to the invention described in the ninth aspect of the patent application, the ion beam measuring device described in any one of the above-mentioned claims is not limited to the above-mentioned effects of the corresponding patent application. effect. 312XP/Invention Manual (Supplement)/96~07/96111782 12 1329892 [Embodiment] In the present specification and the drawings, in order to face the respective machines, the direction of ion implantation is indicated, and thus the use is at one point. The three axes orthogonal, namely the X axis, the y axis, and the 2 axes. The x-axis, the y-axis, and the Z-axis may be axes orthogonal to each other at one point, and it is not necessarily limited to the direction of the illustrated example. The Z (four) may be perpendicular, horizontal, or inclined. Fig. 1 is a schematic front view showing an embodiment of an ion beam irradiation device of the ion beam measuring device of the present invention. The ion beam irradiation apparatus = an ion source 2, a substrate driving device 3G, and an ion beam measuring device 4A. The ion source 2 leads the ion beam 1 〇 in the two-axis direction. The substrate driving device 3G has a function of linearly moving the substrate 26 and the support frame 28 holding the substrate 26 in the y-axis direction as indicated by an arrow b in the ion beam irradiation region derived from the ion source 2. The ion beam measuring apparatus measures the spatial distribution of the ion beam 1 导出 derived from the ion source 2. The path of the ion beam 10 is maintained in a vacuum environment in a vacuum vessel (not shown). Second < Brother In the present specification t, the term "direction along" means, for example, a direction parallel or substantially parallel, but is not necessarily limited thereto. The ion beam 1 导出 derived from the ion source 2, in this example, as shown in FIG. 2, has a dimension in the X-axis direction that is larger than the dimension in the y-axis direction and forms a rectangular-shaped cross section, but is not limited thereto. . The ion beam 10 having the shape of this example is formed as a ribbon-shaped, sheet-like or ribbon-shaped ion beam. However, it does not mean that the size along the y-axis direction is as thin as paper. 312χρ/Invention Manual (Supplement)/96-07/96111782 13 The ion source 2 is provided with: an electric field in the plasma 3 generating the electric enthalpy 3, and a channel 7 ^ and a porous ion beam 1 从 from the porous electrode Electrode 6. The illuminating electrode 6 has 3# in the illustrated example, but is not limited to any value above the sheet. Each of the porous electrodes 6 is arranged along the xy plane. The porous electrode 6 is at least substantially in the X-axis direction at substantially equal intervals p, and is substantially the same as the plural (specifically, the majority) ion-extracting hole 8. Each of the ion-extracting holes 8 is, for example, a circular hole, but is not limited thereto. For example, ', a long slit shape can be formed in the y-axis direction. When each ion-extracting hole 8 is formed into a small hole such as a circular hole, each of the porous electrodes 6 may also have a plurality of ion-conducting and ion-beam devices having substantially the same size as each other in the y-axis direction. Between the ion source 2 and the substrate 26, the spatial distribution of the ion beam 1 导出 derived from the ion source 2 having the porous electrode 6 as described above along the z-axis direction (more spatial distribution along the z-axis direction) is measured. , hereinafter, not to say that it is below the y-axis direction, that is, in the direction of the X-vehicle. In the present embodiment, the ion beam measuring device 40a includes a shield plate 12, a detector 18, and a detector driving device 24. The shield plate 12 is located on the downstream side of the ion source 2 (the same as the downstream side when viewed from the traveling direction of the ion beam), and has an opening 14 through which a part of the ion beam 1 derived from the ion source 2 passes. The detector 18 is located on the downstream side of the shield plate 12 and detects the ion beam current of the ion beam 10 passing through the opening 14 of the shield plate a (in other words, the measurement is performed. Hereinafter, the same). The 312XP/Invention Manual (supplement)/96-07/96111782 14 1329892

St，有使該檢測器18在本實施形態中經牙體22如前頭c所示，橫跨屏蔽板12開口 14之下 2且沿X軸方向直線性移動的機能。元件符號20係指檢測器18(更具體而言係指其入口）的移動平面。上述開口 14係在測定離子束1()的空間分佈時所使用的 :口’在該測定中是否設置有未使用的開口於屏蔽板Μ 上，不在所問。St has a function of causing the detector 18 to linearly move in the X-axis direction across the opening 14 of the shield plate 12 as shown by the front head c in the present embodiment. Element symbol 20 refers to the plane of movement of detector 18 (more specifically, its inlet). The opening 14 is used when measuring the spatial distribution of the ion beam 1 (): whether the port ' is provided with an unused opening on the shield plate 该 in the measurement, and is not asked.

科:測°° 18對於支撐體22為電氣絕緣，不致因其存在而，子束10的離子束電流檢測造成阻礙。在後述的其他實施形態中亦同。檢測益18係法拉第杯、板狀電極、細線電極等檢測電極。此外’在該等法拉第杯等的上游側附近，亦可設置抑制釋放二次電子逃離的抑制電極。利用檢測器驅動裝置24進行的檢測器18之上述移動，在後述距離L、d實質保持—定的狀態下實施。該移動方向可為單-方向，但是最好為往復方向。關於後述其他實施开ν態中，利用檢測器驅動裝置24、檢測器單元驅動装置25進行的檢測器18與檢測器單元犯之移動亦同。在本實施形態申’藉由屏蔽板驅動裝置16，於測定離子束10的空間分佈時，使屏蔽板12位於離子源2下游側’而於對練26照射離子束時，將其移動（退縮）至不會造成妨礙的位置。檢測器驅動裝置24在本實施形態中’具有使檢測器18在測定離子束1〇的空間分佈時，位於屏蔽板了游側的敎位置，而在對基& 26照射離子 312ΧΡ/發明說明書(補件)/96-07/96111782 15 1329892 f時’將其移動（退縮）至不會造成後述的其他實施形態中亦同。位置的機此。在 ^後門：該離/束測定裝置恤，若將多孔電極6與檢測裔18間沿2軸方向的距離設，、揿巧 a間沿z財向的距離設為d，將m12與檢測器 ^ 析辱蔽板12開口 14 π X m尺寸設為b，將檢測器1δ沿χ 為w’便滿足下式之關係、或該數式4如同上述數式卜如^在數予夕上等效之關係。離+遙4^丨。如則述，a係多孔電極6的各 X軸方㈣严沿X轴方向的尺寸，㈠系該離子導出孔8沿 ::方向的間隔。當離子導出孔8、開口 14、檢測器Μ [數式面J狀呈圓形的情況’尺寸“I便分別為其直徑。 {w(L-d)+bL}/d<Cp-a) 最ΐ:二！ί有複數多孔電極6的情況，上述距離L便從 ^貝'、夕孔電極6之下面測定。當檢測器18在沿ζ 軸方向上具有深度的情況，上述距離…便如不，從檢測器18的入口測定。上述距離4更詳言之檢與屏蔽板12開口14部分間沿ζ軸方向的距離。蔽板12可為整體相同厚度的板，亦可如圖3所示的降子為開σ 14周邊部較薄於其他部位的板。無論何種情況’屏蔽板12開口 14部分的厚度’通常遠小於上述距 ’例如相對於距離L為38—左右、距離dA32〇mm 右之下，開口 14部分的厚度為1mm左右，少了 2位數之程度’在決定上述數式4的關係時，實用上亦可忽視屏 312XP/發明說明劃補件)/96-07/96111782 16 1329892 蔽板12的厚度，因而設定為此種狀況。鉦 ^ 意到厚度，上述距離d便如圖3所干，亦:何，右注分的板厚中心測定。03心亦可從開口U部就上述數式4(即，數式卜以下亦同照圖4進行說明。若> χ站古a u. 參运仃說Θ心口 X軸方向，將從檢測器18穿献板12開口 η而能看到多孔電極6的尺寸設定為t，將該^寸t在X座標上的始點設為原點Q，將屏蔽板^開口乂4其中一端(靠近原點_χ座標設定為s，則檢測器 18八中一端6的又座標心，便由數式5表示，而另一端{ 的X座標以便由數式6表示。 [數式5]Section: Measurement ° ° 18 is electrically insulated from the support 22, so that the ion beam current detection of the beam 10 is hindered due to its presence. The same applies to other embodiments to be described later. Detecting the detection electrode of the F18 first Faraday cup, plate electrode, and thin wire electrode. Further, in the vicinity of the upstream side of the Faraday cup or the like, a suppressing electrode for suppressing the escape of secondary electrons from being escaped may be provided. The above-described movement of the detector 18 by the detector driving device 24 is carried out in a state in which the distances L and d described later are substantially maintained. The direction of movement can be single-direction, but preferably in the direction of reciprocation. In the other implementation state described later, the detector 18 and the detector unit driving device 25 perform the same movement as the detector unit. In the present embodiment, when the spatial distribution of the ion beam 10 is measured by the shield driving device 16, the shield plate 12 is placed on the downstream side of the ion source 2, and when the ion beam 26 is irradiated with the ion beam, it is moved (retracted) ) to a position that will not cause obstruction. In the present embodiment, the detector driving device 24 has a state in which the detector 18 is distributed in the space of the measurement ion beam 1 ,, and is located at the 敎 position of the shielding plate on the side of the shielding plate, and irradiates ions 312 ΧΡ to the substrate & 26 (Supplement) /96-07/96111782 15 1329892 f When 'moving (retracting) to not cause the same in other embodiments to be described later. The location of this machine. In the back door: the distance/beam measuring device shirt, if the distance between the porous electrode 6 and the detecting body 18 in the direction of the two axes is set, the distance between the abundance a along the z-axis is set to d, and the m12 and the detector are ^ The smear panel 12 opening 14 π X m size is set to b, the detector 1 δ is w w w 便便满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足满足The relationship between effects. From + remote 4 ^ 丨. As described above, the respective X-axis directions (4) of the a-type porous electrode 6 are strictly along the X-axis direction, and (1) the interval between the ion-extracting holes 8 in the :: direction. When the ion-extracting hole 8, the opening 14, and the detector Μ [the case where the surface is J-shaped, the size "I" is its diameter. {w(Ld)+bL}/d<Cp-a) In the case where there are a plurality of porous electrodes 6, the above-mentioned distance L is measured from the lower surface of the cathode electrode 6. The detector 18 has a depth in the direction of the , axis, and the above distance is as follows. Measured from the entrance of the detector 18. The distance 4 is more specifically detected as the distance between the portions of the opening 14 of the shield plate 12 along the x-axis direction. The shield 12 may be a plate of the same thickness as a whole, as shown in FIG. The descending member is a plate whose peripheral portion of the opening σ 14 is thinner than other portions. In any case, the thickness of the portion of the opening 14 of the shielding plate 12 is generally much smaller than the above-mentioned distance 'for example, about 38 to the distance L, and the distance dA32 〇 The lower right side of mm, the thickness of the opening 14 is about 1mm, and the degree of two digits is reduced. 'When the relationship of the above formula 4 is determined, the screen 312XP/invention description can be ignored. 96-06 /96111782 16 1329892 The thickness of the shield 12 is thus set to such a condition. 意^ Intended thickness, the above distance d is as Figure 3 is dry, also: What is the center of the plate thickness of the right injection. The 03 heart can also be described above from the U of the opening (i.e., the number is also described below with reference to Figure 4. If > Station ancient a u. 仃仃仃仃仃仃仃仃 Θ , , , , , , , , , , , , , , , , , 检测检测检测检测检测检测检测检测检测检测检测检测检测检测检测检测检测检测检测检测检测检测The point is set to the origin Q, and one end of the shielding plate ^ opening 乂 4 (close to the origin _ χ coordinate is set to s, then the coordinate center of the end 6 of the detector 18 is represented by the numeral 5, and the other end The X coordinate of { is expressed by Equation 6. [Expression 5]

Xe=Ls/(L-d) [數式6]Xe=Ls/(L-d) [Expression 6]

Xf=L(s-t+b)/(L-d)+t 所以，因為檢測器18的尺寸w為Xe_Xf (即w=Xe_Xf)，因而將數式5與數式6代入並整理，上述尺寸t便依下式表示0 [數式7] t={w(L-d)+bL}/d 其中，藉由將該尺寸t，依如下式，設定為小於多孔電極6中未没置離子導出孔8之部分9的尺寸（即p_a),利用檢測器18所測定的離子束1 〇便經常從一個離子導出孔 8射出。換言之，可在不會同時入射於一個檢測器μ的狀態下測定從複數離子導出孔8射出的離子束1〇。此現 312XP/發明說明書(補件)/96·07/96111782 17 叫9892 象’無論檢測器18在沿x軸方向上的任何位置處（即使移動）均可成立。 [數式8] t< (p-a) 右將數式7代入此數式8中，便可獲得上述數式4。藉由滿足該數式4的關係、或滿足與該式在數學上等效 ^關係，若如上述，將檢測器18利用檢測器驅動裝置24 沿X軸方向移動，便可在從複數離子導出孔8所射出的離 =束10不會同時入射於檢測器18中的情況下，在一個測定位置處，僅由從一個離子導出孔8所射出的離子束入射。若就此參照圖5進行更詳細之說明，分別從多孔電極6之例如離子導出孔8a~8g中射出的離子束i〇a〜Mg，通過屏蔽板12的開口 14,並在沿x軸方向的位置χι〜χ 處，分別入射於檢測器18中。此情況下，因為滿足丄= 數j 4的關係’因而複數離子束10a等不會同時入射於檢測器18中。、所以，使用檢測器18所測得的離子束1〇之空間分成為依序測定從單一離子導出孔8中射出刀 s ^ , 丁耵出的離子束10的、·，。果之連續。依此所測得之離子束電流在沿X軸方向分佈概略例，如圖6所示。目6中的黑點係指上述各：： X⑼處的離子束電流。虛線34係連接”離散的離電流值而得’通常形成接近高斯分佈的形狀。依如上述，根據該離子束測定裝置，因苟從具有多孔雷極6的離子源2之複數離子導出孔8 Φ 电 r,射出的離子束 312XP/發明說明書(補件)/96·07/96111782 18 丄⑽892 10 ’可在不會同時入射於一個檢測器18的狀態下，測定離子束10沿X軸方向的空間分佈，因而不需要摺積積分等複雜的運算處理，可簡單地測定從多孔出孔8中射料，離子束1〇所具有的特性。結=離= 紐特性的運算處理所需要之時間，而可縮短測定所需要的例如依照如下述的單純測定方法，便可求得沿X軸方向的發散角度0、偏差角度α。參照圖7(A)，當不存在屏蔽板12的情況，從中心X座標位於Xi位置處的離子導出孔8中所射出的離子束1〇, 在距多孔電極6的距離之平面(即檢測$ 18 動平面）20上，所形成的離子束之強度分佈（即離子 |^佈9。]以下亦同）’可利用依下式所示高斯分佈L趨近。 exp- 2σ；其中’【係常數’ σ 上述高斯分佈標準差-與從離子導出孔8中射出時的離子散角度Θ，亦請參照圖8,依下式關係定義 ^ 出孔8的上述尺寸。你離子導 [數式10] 〇 i=a/2+L · tan θ 就上述事項，當存在罝右 ^ + '、有 X=Xs為中心之開d 14的s 蔽板12時，若就能使離子束μ Μ的屏束1〇入射於檢測器18中的離 312ΧΡ/發明說明書(補件)/96-07/96111782 19 1329892 子導出孔8 —一討論，便如圖7(B)所示，可謂與從中心χ 座‘為xs的位置射出離子束1〇的情況等效。圖7(Α)中的離子束10a〜10e分別與圖7(B)中的離子束1〇a〜1〇e相對應圖7(A)中的離子束i〇a〜i〇e從一個離子導出孔8中射出，而圖7(B)中的離子束10a〜1〇e則從複數離子導出孔8中射出，但是該等複數離子導出孔8的大小為互相相同的尺寸a，且相互極靠近地的存在，因而圖7(A)中的離子束10a〜10e可謂分別同等於圖7(B)中的離子束春 10a〜l〇e 。圖7(B)的情況’若將檢測器18中心的χ座標設為Xd，利用使檢測器18如上述般移動而所測得的離子束強戶八佈，可利用由下式所示高斯分佈IQ趨近。 [數式11] h=K2 exp ~(^0 ^Xd) 其中，κζ係常數，χ。係上述高斯分佈1(|尖峰值的χ座桿， σ係上述高斯分佈的標準差。因為該高斯分佈Iq係將圖 7(A)所示高斯分佈Ii縮小為實質相似形狀，因而標準差α 便成為上述標準差σ i的d/L倍。d係上述距離。所以，可根據數式10依下式表示： [數式12] σ =(a/2+L · tan0 )(d/L) 將該數式12變形，可從下式或與其在數學上等效的气子中，求得從多孔電極6的離子導出孔8中射出時， 312XP/發明說明書(補件)/96-07/96111782 20 1329892 該數式13與上述數式束1 〇沿X袖方向的發散角度0 相同。 [數式13] ^ =tan_1( o /d-a/2L) 再者，從上述x座標Xd、χ。及距離d，參照圖9 據下式或與其在數學上等效的式子，可求得 ' 根的離子導出孔8中射屮賠_純夕孔電極6 角产束10沿x轴方向的偏差月度α。該數式14與上述數式3相同。 [數式14] a -tan 1{(x〇~Xs)/d} 6::二上述離子束測定方法’可在從具有多孔電極 6的離子源2之複數離子導出孔8中射出的離子束工會同時人射於-個檢測器18的狀態下’敎離 X軸方向的空間分佈’根據該測定結果，可測定離子束:：沿X軸方向的發散角度Θ與偏差角度α，因而不需積分等複雜的運算處理，可簡單地測定從多孔電極6的離子導出孔8中射出時，離子束1〇的發散角度θ與偏差角結果’可縮短運算處理所需要的時間，而可縮疋所需要的時間。义另外、’上述離子束測定裝置4〇a與離子束測定方法，如前述’並未著眼於沿y軸方向的離子束1〇分佈，因而上述開口 14在沿y軸方向上可形成長狹縫狀。此情況下，檢測器18亦可設定為沿y軸方向較長之狀態。依此，可增加由檢測器18檢測的離子束電流，而可提高檢測靈敏 312XP/發明說明書(補件)/96-07/96111782 21 1329892 度。在後述的其他實施形態中亦同。圖1所示離子束照射裝置具有如上述的離子束測定装置40a，可在利用離子束測定裝置_測定離子束1〇、^ 及對基板26照射離子束1G而處理基板26之間進行切換。再度參照®卜基板驅動裝置3G在圖示例中，使支禮架28及其所保持的基板26，朝實質水平方向移動，惟並不僅侷限於此。例如亦可使支標架28及其所保持的基板 ’依朝實質垂直方向站立的狀態而移動。如前所述，z ^未f 一定為垂直方向，亦可例如配合該基板26的方〇 X疋為垂直方向、水平方向、或傾斜於該等的方向。 =相對於基板26表面，使z轴非呈垂直而是斜向傾斜。 4 if况下’通常將x轴保持為與基板26表面成實質平行為使Z轴㈣度能輕易地作如上述的變化，亦可使離子 =2’甚至視需要’亦將離子束測定裝置他以X轴的實中心而旋轉’使離子束1〇的入射角度能對基 =表…變狀態。依此，可使該入射角度在例如小於9 0度的範圍内變化。利用基板驅動裝置30進行的基板26移動，可為單一方 =，亦可為往復方向（往返掃描），但是最好依等速度移 =另^因為亦可使2軸如上述對基板26表面呈傾斜 =#使基板26沿y軸方向的移動，若從正面觀看基板表面，便呈沿y轴方向移動（參照圖2)。基板26例如為半導體基板、玻璃基板、具配向膜之基 312XP/發明說明書(補件)/96.〇7/96丨11782 22 1329892 ^面f其他的基板4配向膜之基板，在玻璃基板等基板，形成使液晶分子朝一定方向配向的配向膜。 ::2所示例子’將離子束1〇沿X軸方向的長度設定 :於基板26在該方向上的長度，藉由合併利用該離 . 〇、與基板26的上述移動，即便基板26屬大型，乃可對基板26整面照射離子束1Q，可施行離子植入、離 :摻雜(曰本註冊商標：「…卜、一…」）、離子研磨、離子束蝕刻、離子束配向處理等處理。鲁其-人，針對離子束測定裝置的其他實施形態進行說明。 =上述實施形態的離子束測定裝置4〇a相同、或相當的部分，便賦予相同的元件㈣，以下就與上述實施形態的不同處為主體而說明。亦可取代上述1個檢測器18及檢測器驅動裝置24，改為如圖10所示之離子束測定裝置4〇b，設置位於屏蔽板 12之下游側的檢測器單元32，其具有沿χ軸方向直線排 φ列的複數上述檢測器18。各檢測器18在沿χ軸方向上具有相互實質相同的大小（即尺寸w)。各檢測器丨8間由圖中觀看呈相互靠近之狀態，但是實際上係相互電氣絕緣，可相互獨立地檢測（測定）離子束1〇的離子束電流。在後述的其他實施形態中亦同。構成該檢測器單元3 2的各個檢測器18，均滿足上述數式4所示關係、或滿足與該式在數學上等效之關係。根據該離子束測定裝置40b，除可達成相同於針對上述離子束測定裝置40a所說明的上述效果之效果外，更可達 M2XP/發明說明書(補件y96-07/961丨1782 23 成如下述效果。即，即便未 =轴方向移動，仍可測定離子束測器單元32 的簡單化。且，因為不需要料移因而可達成構造挪定所需要㈣間。的相，㈣可縮短在：=亦可如圖11所示離子束測定裝置*，至少開口 14*t4具:：互實質相同大小(即尺")的複數相鄰二二並不僅偈限於圖11所示的3個。 i爛口14間的間隔"· ··可為互同亦可為互具有使檢測器口 14下游部，該實施形態的情況，檢測器驅動裝置24 U如箭頭C所示，橫跨屏蔽板12的複數開並沿X軸方向直線性移動的機能。，檢測ϋ 18滿足上述數式4所示關係、或滿足與該式予上專效之關係。且，該離子束測定裝置4〇c中上述距離d小於通過屏蔽板12的複數開口 14之離子束1〇同時入射於檢測器18中的距離。以下詳述此種關係。參照圖12，離子源2的多孔電極6構造上，若將離子束10理淪上能形成的最大發散角度設定為沒，則通過相鄰二個開口 14的離子束10不會同時入射於檢測器18中的條件，如下式所示。其中，q係複數開口 14的間隔φ、 q2…中之最小者。其他的符號則如同前述。 [數式15] q > 2d · tan β +w+b 312XP/發明說明書(補件)/96-07/96111782 24 將此數式15變形，並著眼於上述距離d，便可獲得下式。 [數式16] • d< (q-w-b)/2tan β •該離子束測定裝置4〇c之屏蔽板12具有複數開口 14, 但是因為如上述將距離d言史定為較小於通過複數開口 14 的離子束H)同時入射於檢測器18中的距離，因而就屏蔽板2#各開σ 14觀之，可達成相同於上述離子束測定褒置4〇a的作用。結果，根據該離子束測定裝置4〇c，除可達成相同於針對上述離子束測定裝置_所說明的效果之效果外，更可達成如下述效果。即，可在沿χ抽方向上的複數地方測定離子束1〇的空間分佈。且，根據該測定結果，視需要在沿χ軸方向上的複數地方，可測定離子束10的上述發散角度Θ與偏差角度α。該離子束測定褒置40c的各距離、尺寸等之具體例，如鲁下所π此例子中’離子導出孔8係圓孔。屏蔽板^的複數開口 14間之間隔係互等的q。離子導出孔8的尺寸a: 2mm(直徑2mm) 離子導出孔8的間隔p ·· 3mm 檢測器18的尺寸w : 2mm 距離 L ·· 380mm 距離 d : 320mm 開口 14的尺寸b ·· 〇. 5mm 開口 14的間隔q : 80mm 312XP/發明說明書(補件)/96·07/96111782 25 丄329892 離子束10的最大發散角度β : 5度此例子的情況，上述數式7所示尺寸t為〇 96mm，上述數式8的條件滿足數式4的條件。且，上述數式5的右邊2d · tan/3+w+b=58mm，因而上述數式15進而滿足數式 16的條件。當屏蔽板12具有複數開口的情況，亦可如圖13所示離子束測定裝置40d，具備有複數檢測器18及檢測器驅動裝置24。該等複數檢測器μ位於屏蔽板12之下游侧，且依與屏蔽板12的開口 14實質相同的間隔qi、q2· · ·，沿x軸方向直線式配置。該檢測器驅動裝置24具有使該等如箭頭C所示，橫跨屏蔽板i 2所對應的開口丨4之下游部’並沿X軸方向整合而直線性移動的機能。各檢測器18在其與支撐體22之間及其等相互之間電氣絕緣地由上述支撐體22所支撐。所以，各檢測器18可相互獨立地檢測離子束1 〇之離子束電流。鲁該等各檢測器丨8滿足上述數式4及數式16所示關係、或滿足與該等在數學上等效之關係。根據該離子束測定裝置40d，除可達成相同於針對上述離子束測定裝置40c所說明的上述效果之效果外，更可達成如下述效果。即，因為具備有使複數檢測器18及該等整合而移動的檢測器驅動裝置24，因而相較於使單一個檢測器18移動的情況，可縮短測定所需要的時間。當屏蔽板12具有複數開口 14的情況，亦可取代上述複數檢測器18及檢測器驅動裝置24 ,改為如圖1 &所示離 312XP/發明說明書(補件)/96-07/96111782 26 1329892 1329892 14之下游部子束測定裝置40e，具備有分別位於各開口的上述複數檢測器單元32。構成該等各檢測器單元32的各檢測器18，均滿足 m及數式16所示關係、或滿足與該等在數學效之關係。 ’ 根據該離子束測定裝置4〇e，除可達成相同於針對上述離子束測定裝置40c所說明的上述效果之效果外，更可達成如下述效果。，即便未使檢測器18或檢測器單元犯攀沿X軸方向移動，仍可測定離子束1〇的空間分佈，因而不需要此種移動用機械性驅動裝置，可達成構造的簡單化。且，因為不需要該等移動的時間，因而可縮短測定所需要的時間。當屏蔽板12具有複數開口 14的情況，亦可如圖15所示離子束測疋裝置40f，具備有一個如上述之檢測器單元 32、與檢測器單元驅動裝置25。該檢測器單元犯位於屏 ❹12下游侧。該檢測器單元驅動裝置25具有使該檢測态單兀32如箭頭Ci、C2…所示，在沿χ軸方向上，依與上述間隔Φ、…實質相同的間隔直線性移動，而使檢測器單元32依序位於各開口 14下游部的機能。構成該檢測器單元3 2的各檢測器18與支撐體2 2，以及各檢測器18之間，均相互電氣絕緣，而各檢測器18可獨立於離子束1 〇而檢測。構成該檢測器單元3 2的各檢測器18均滿足上述數式4 與數式16所示關係、或滿足與該式在數學上等效之關係。 312XP/發明說明書(補件)/96-07/96111782 27 1329892 根據該離子束測定裝置4〇f，Xf=L(s-t+b)/(Ld)+t Therefore, since the size w of the detector 18 is Xe_Xf (i.e., w=Xe_Xf), the equations 5 and 6 are substituted and sorted, and the above-mentioned size t Then, 0 is expressed by the following formula: [Expression 7] t={w(Ld)+bL}/d wherein, by setting the size t, it is set to be smaller than the non-discharged hole 8 in the porous electrode 6 The size of the portion 9 (i.e., p_a) is often ejected from an ion-extracting aperture 8 by the ion beam 1 measured by the detector 18. In other words, the ion beam 1 射 emitted from the complex ion deriving holes 8 can be measured in a state where it is not incident on one detector μ at the same time. The present 312XP/invention specification (supplement)/96·07/96111782 17 is called 9892 'image' regardless of the detector 18 at any position along the x-axis direction (even if moving). [Expression 8] t< (p-a) The following formula 7 is obtained by substituting the expression 7 into the equation 8. By satisfying the relationship of Equation 4 or satisfying a mathematically equivalent relationship with the equation, if the detector 18 is moved in the X-axis direction by the detector driving device 24 as described above, it can be derived from the complex ions. When the beam 10 emitted from the hole 8 is not simultaneously incident on the detector 18, only one ion beam emitted from one ion deriving hole 8 is incident at one measurement position. As will be described in more detail with reference to Fig. 5, the ion beams i〇a to Mg respectively ejected from the ion-extracting holes 8a to 8g of the porous electrode 6, respectively, pass through the opening 14 of the shield plate 12 and in the x-axis direction. Positions χι~χ are incident on the detector 18, respectively. In this case, since the relationship 丄 = the number j 4 is satisfied 'the plurality of ion beams 10a and the like are not simultaneously incident on the detector 18. Therefore, the spatial division of the ion beam 1 测 measured by the detector 18 is used to sequentially measure the ion beam 10 from the single ion deriving hole 8 and the ion beam 10 which is ejected from the single ion deriving hole 8. The continuity of the fruit. The ion beam current measured according to this is schematically distributed along the X-axis direction as shown in Fig. 6. The black dots in item 6 refer to the ion beam currents at the above:: X (9). The dashed line 34 is connected to the "discrete current value" and generally forms a shape close to the Gaussian distribution. As described above, according to the ion beam measuring apparatus, the plurality of ions are extracted from the ion source 2 having the porous thunder electrode 6 Φ Electric r, emitted ion beam 312XP/Invention manual (supplement)/96·07/96111782 18 丄(10)892 10 'The ion beam 10 can be measured along the X-axis direction without being incident on one detector 18 at the same time. Since the spatial distribution is such that complex arithmetic processing such as folding integral is not required, it is possible to easily measure the characteristics of the ion beam 1 射 from the porous exit hole 8. The calculation of the junction = off = neon characteristic is required. With time, it is possible to shorten the divergence angle 0 and the deviation angle α in the X-axis direction, for example, according to the simple measurement method described below. Referring to FIG. 7(A), when the shield plate 12 is not present, The intensity of the ion beam formed from the ion beam 1 射 emitted from the ion-extracting hole 8 at the position of the X at the center X coordinate, in the plane of the distance from the porous electrode 6 (ie, detecting a horizontal plane of 20) 20 Distribution (ie ion |^ 9.] The following is also the same as 'the Gaussian distribution L can be approximated by the following equation. exp- 2σ; where '[system constant] σ the above-mentioned Gaussian distribution standard deviation - and the ion dispersion when ejected from the ion-exriving hole 8 For the angle Θ, please refer to Fig. 8. Define the above size of the hole 8 according to the following relationship. Your ion guide [Expression 10] 〇i=a/2+L · tan θ For the above matters, when there is 罝 right ^ + ', when there is X=Xs as the center of the d 14 s shield 12, if the beam bundle 1 离子 of the ion beam μ 〇 can be incident on the detector 18 from the 312 ΧΡ / invention specification (supplement) / 96-07/96111782 19 1329892 The sub-extraction hole 8 is discussed as shown in Fig. 7(B), which is equivalent to the case where the ion beam 1〇 is emitted from the position of the center squatter xs. Figure 7 (Α The ion beams 10a to 10e in the respective ones correspond to the ion beams 1〇a to 1〇e in Fig. 7(B), and the ion beams i〇a to i〇e in Fig. 7(A) are extracted from an ion-derived hole 8 The medium beams 10a to 1〇e in FIG. 7(B) are emitted from the plurality of ion-extracting holes 8, but the sizes of the plurality of ion-extracting holes 8 are the same size a and close to each other. The presence, Further, the ion beams 10a to 10e in Fig. 7(A) can be said to be equivalent to the ion beam springs 10a to l〇e in Fig. 7(B). The case of Fig. 7(B) 'If the center of the detector 18 is χ When Xd is used, the ion beam intensity measured by moving the detector 18 as described above can be approximated by the Gaussian distribution IQ shown by the following equation. [Expression 11] h=K2 exp ~(^ 0 ^Xd) where κζ is a constant, χ is the above Gaussian distribution 1 (|the cusp of the peak of the peak, σ is the standard deviation of the above Gaussian distribution. Since the Gaussian distribution Iq reduces the Gaussian distribution Ii shown in Fig. 7(A) to a substantially similar shape, the standard deviation α becomes d/L times the standard deviation σ i described above. d is the above distance. Therefore, it can be expressed according to the following formula: [Expression 12] σ = (a / 2 + L · tan0 ) (d / L) The expression 12 can be modified from the following formula or mathematically In the case of an effective gas, when it is emitted from the ion-extracting hole 8 of the porous electrode 6, 312XP/Invention Manual (Supplement)/96-07/96111782 20 1329892 The formula 13 and the above-mentioned digital beam 1 〇 along the X The divergence angle 0 in the sleeve direction is the same. [Expression 13] ^ =tan_1( o /d-a/2L) Further, from the above x coordinates Xd, χ. And the distance d, referring to FIG. 9 according to the following formula or its mathematically equivalent formula, can be obtained as 'the root ion-extracting hole 8 in the shot-loss _ pure-night hole electrode 6 angle beam 10 along the x-axis direction Deviation monthly α. This formula 14 is the same as the above formula 3. [Expression 14] a -tan 1{(x〇~Xs)/d} 6:: The above-mentioned ion beam measuring method 'is an ion which can be emitted from the complex ion deriving hole 8 of the ion source 2 having the porous electrode 6 According to the measurement result, the ion beam can be measured according to the measurement result: the divergence angle Θ along the X-axis direction and the deviation angle α, and thus the bundle union is simultaneously shot in the detector 18 When complicated calculation processing such as integration is required, it is possible to easily measure the divergence angle θ of the ion beam 1 与 and the deviation angle result when ejecting from the ion-extracting hole 8 of the porous electrode 6 can shorten the time required for the arithmetic processing, and can be reduced. The time it takes. Further, 'the above-described ion beam measuring device 4a and the ion beam measuring method, as described above, do not pay attention to the ion beam 1〇 distribution along the y-axis direction, and thus the above-mentioned opening 14 can form a long narrow in the y-axis direction. Sewed. In this case, the detector 18 can also be set to be in a state of being long in the y-axis direction. Accordingly, the ion beam current detected by the detector 18 can be increased, and the detection sensitivity 312XP/invention specification (supplement)/96-07/96111782 21 1329892 degrees can be improved. The same applies to other embodiments to be described later. The ion beam irradiation apparatus shown in Fig. 1 has the ion beam measuring apparatus 40a as described above, and is switchable between the ion beam measuring apparatus _ measuring the ion beam 1 〇 and the substrate 26 irradiating the ion beam 1G to process the substrate 26. Referring again to the substrate driving device 3G, in the illustrated example, the cradle 28 and the substrate 26 held thereon are moved in the substantially horizontal direction, but are not limited thereto. For example, the holder 28 and the substrate s held therein can be moved in a state of standing in a substantially vertical direction. As described above, z ^ not f must be in the vertical direction, and for example, the direction of the substrate 26 may be perpendicular, horizontal, or oblique. = With respect to the surface of the substrate 26, the z-axis is not vertically but obliquely inclined. 4 If the condition is 'normally, the x-axis is kept substantially parallel to the surface of the substrate 26 so that the Z-axis (four) degree can be easily changed as described above, and the ion can be made 2 or even as needed. He rotates with the real center of the X-axis to make the incident angle of the ion beam 1 能 change state to the base = table. Accordingly, the incident angle can be varied within a range of, for example, less than 90 degrees. The movement of the substrate 26 by the substrate driving device 30 may be a single square= or a reciprocating direction (reciprocal scanning), but it is preferable to shift according to the equal speed=otherwise, because the two axes may be the surface of the substrate 26 as described above. Tilt=# The movement of the substrate 26 in the y-axis direction is moved in the y-axis direction when the substrate surface is viewed from the front (see Fig. 2). The substrate 26 is, for example, a semiconductor substrate, a glass substrate, a substrate having an alignment film 312XP/invention specification (supplement)/96.〇7/96丨11782 22 1329892, a substrate of another substrate 4 alignment film, a glass substrate, or the like. The substrate forms an alignment film that aligns the liquid crystal molecules in a certain direction. The example shown by ::2 sets the length of the ion beam 1 〇 along the X-axis direction: the length of the substrate 26 in the direction, by combining the above-mentioned movements of the 〇 and the substrate 26, even if the substrate 26 is Large-scale, the ion beam 1Q can be irradiated to the entire surface of the substrate 26, and ion implantation, ionization doping ("registered trademark: "...bu, one..."), ion milling, ion beam etching, ion beam alignment processing can be performed. Wait for processing. Lu Qi-human describes another embodiment of the ion beam measuring device. In the same or equivalent portions of the ion beam measuring apparatus 4a of the above-described embodiment, the same elements (4) are given, and the differences from the above-described embodiments will be mainly described below. Instead of the above-described one detector 18 and detector driving device 24, instead of the ion beam measuring device 4〇b shown in FIG. 10, a detector unit 32 located on the downstream side of the shield plate 12 may be provided, which has an edge along the crucible. The detector 18 is a plurality of detectors 18 arranged in a straight line φ column in the axial direction. Each of the detectors 18 has substantially the same size (i.e., dimension w) in the z-axis direction. The detectors 8 are in a state of being close to each other as viewed in the drawing, but are actually electrically insulated from each other, and the ion beam current of the ion beam 1 可 can be detected (measured) independently of each other. The same applies to other embodiments to be described later. Each of the detectors 18 constituting the detector unit 32 satisfies the relationship shown in the above formula 4 or satisfies the mathematically equivalent relationship with the equation. According to the ion beam measuring device 40b, in addition to the effect similar to that described above for the ion beam measuring device 40a, the M2XP/invention specification (supplement y96-07/961丨1782 23 is as follows) The effect is that the simplification of the ion beam detector unit 32 can be measured even if the direction of the axis is not shifted. Moreover, since the material shift is not required, the phase required for the configuration (4) can be achieved, and (4) can be shortened in: = The ion beam measuring device * as shown in Fig. 11 may have at least 14*t4 openings: the plural of the same size (i.e., the ruler ") is not limited to the three shown in FIG. The interval between the two rotten ports 14 may be mutually identical or may have a downstream portion of the detector port 14. In the case of this embodiment, the detector driving device 24 U is shielded across the shield as indicated by the arrow C. The function of the plurality of plates 12 being linearly moved in the X-axis direction. The detection ϋ 18 satisfies the relationship shown in the above formula 4, or satisfies the relationship with the above-mentioned formula. Further, the ion beam measuring device 4〇 The above distance d in c is smaller than the plurality of openings 14 passing through the shielding plate 12. The distance at which the beamlets 1 入射 are simultaneously incident on the detector 18. This relationship will be described in detail below. Referring to Fig. 12, the porous electrode 6 of the ion source 2 is constructed such that the maximum divergence angle can be set by the ion beam 10 If not, the conditions in which the ion beam 10 passing through the adjacent two openings 14 are not simultaneously incident on the detector 18 are as follows, where q is the smallest of the intervals φ, q2, ... of the plurality of openings 14. The other symbols are as described above. [Expression 15] q > 2d · tan β + w+b 312XP / invention specification (supplement) / 96-07/96111782 24 This equation 15 is deformed and looks at the above distance d, the following formula can be obtained. [Expression 16] • d < (qwb)/2tan β • The shield plate 12 of the ion beam measuring device 4〇c has a plurality of openings 14, but since the distance d is as stated above It is smaller than the distance of the ion beam H) passing through the plurality of openings 14 simultaneously incident on the detector 18, so that the shielding plate 2# is opened, so that the same ion beam measuring device 4〇a can be achieved. effect. As a result, according to the ion beam measuring apparatus 4〇c, in addition to the effect similar to that described above for the ion beam measuring apparatus, the following effects can be achieved. That is, the spatial distribution of the ion beam 1 可 can be measured at a plurality of places along the pumping direction. Further, based on the measurement result, the divergence angle Θ and the deviation angle α of the ion beam 10 can be measured at a plurality of places along the z-axis direction as needed. A specific example of the respective distances, dimensions, and the like of the ion beam measuring device 40c is as follows. In the example of this example, the ion-extracting hole 8 is a circular hole. The interval between the plurality of openings 14 of the shield plate ^ is equal to q. Dimension a of ion-extraction hole 8: 2 mm (diameter 2 mm) Interval of ion-extraction hole 8 p ··3 mm Size of detector 18: 2 mm Distance L ·· 380 mm Distance d: 320 mm Size of opening 14 b ·· 〇. 5 mm Interval q of the opening 14: 80 mm 312XP / invention specification (supplement) / 96·07/96111782 25 丄 329892 Maximum divergence angle β of the ion beam 10: 5 degrees In the case of this example, the dimension t shown in the above formula 7 is 〇 96 mm, the condition of the above formula 8 satisfies the condition of the formula 4. Further, since the right side 2d · tan / 3 + w + b = 58 mm of the above formula 5, the above formula 15 further satisfies the condition of the formula 16. When the shield plate 12 has a plurality of openings, the ion beam measuring device 40d as shown in Fig. 13 may be provided with a plurality of detectors 18 and a detector driving device 24. The complex detectors μ are located on the downstream side of the shield plate 12, and are arranged linearly in the x-axis direction at substantially the same intervals qi, q2, · · · with the opening 14 of the shield plate 12. The detector driving device 24 has a function of linearly moving in the X-axis direction so as to straddle the downstream portion ′ of the opening 丨 4 corresponding to the shield plate i 2 as indicated by an arrow C. Each of the detectors 18 is supported by the support body 22 electrically insulated from the support body 22 and the like. Therefore, each detector 18 can detect the ion beam current of the ion beam 1 相 independently of each other. Each of the detectors 等8 satisfies the relationship shown by the above formulas 4 and 16, or satisfies the mathematically equivalent relationship. According to the ion beam measuring device 40d, in addition to the effects similar to those described above for the ion beam measuring device 40c, the following effects can be obtained. That is, since the detector driving device 24 that moves the complex detector 18 and the like is provided, the time required for the measurement can be shortened compared to the case where the single detector 18 is moved. When the shielding plate 12 has a plurality of openings 14, it may be replaced by the above-mentioned complex detector 18 and the detector driving device 24, as shown in FIG. 1 & shown in FIG. 1 & 312XP/invention specification (supplement)/96-07/96111782 26 1329892 1329892 The downstream sub-beam measuring device 40e of the 14 includes the complex detector unit 32 located at each opening. Each of the detectors 18 constituting each of the detector units 32 satisfies the relationship shown by m and the formula 16, or satisfies the mathematical effect. According to the ion beam measuring apparatus 4〇e, in addition to the effects similar to those described above for the ion beam measuring apparatus 40c, the following effects can be obtained. Even if the detector 18 or the detector unit is not moved in the X-axis direction, the spatial distribution of the ion beam 1 仍 can be measured, so that such a mechanical driving device for movement is not required, and the structure can be simplified. Moreover, since the time of such movement is not required, the time required for the measurement can be shortened. When the shield plate 12 has a plurality of openings 14, the ion beam measuring device 40f as shown in Fig. 15 may be provided with a detector unit 32 as described above and a detector unit driving device 25. The detector unit is located on the downstream side of the screen 12. The detector unit driving device 25 has a linear movement of the detection state unit 32 as shown by the arrows Ci, C2, ... in the zigzag direction at substantially the same interval as the above-mentioned intervals Φ, ..., so that the detector The unit 32 is sequentially located at the downstream of each opening 14. Each detector 18 and the support 2 2 constituting the detector unit 32 are electrically insulated from each other between the detectors 18, and each detector 18 can be detected independently of the ion beam 1 。. Each of the detectors 18 constituting the detector unit 32 satisfies the relationship shown by the above formula 4 and the formula 16, or satisfies the mathematically equivalent relationship with the equation. 312XP/Invention Manual (Supplement)/96-07/96111782 27 1329892 According to the ion beam measuring device 4〇f,

’、’’ ’叫口町间。述各實施形態的發展形態，亦可使檢測器18‘,’’’ is called the mouth of the town. The development mode of each embodiment can also make the detector 18

•空間分佈。且，根據該測定結果， ’亦可求得二維的離子束 10發散角度Θ及偏差角度α。【圖式簡單說明】圖1為具備本發明之離子束測定裝置的離子束照射裝置之一實施形態的概略正視圖。圖2為圖1中的離子束截面及基板一例的概略俯視圖。圖3為屏蔽板開口附近一例的放大剖視圖。圖4為多孔電極、屏蔽板及檢測器的位置關係圖。圖5為入射於檢測器中的離子束概略圖。圖6為離子束的空間分佈一例概略圖。圖7為離子束的空間分佈說明概略圖；（Α)係原本的空間分佈’（Β)係通過屏蔽板開口後的空間分佈。圖8為離子束的發散角度說明圖。圖9為離子束的偏差角度說明圖。圖1 〇為本發明之離子束測定裝置的另一實施形態概略圖。 (補件)/%·〇7/96 丨丨丨 782 28 1329892 圓Π為具備本發明之雜置之另-實施形態概略正梘圖東測定裝置的離子束照射襄圖12為屏蔽板的二個開口鱼 Ρϊ η兹曰址丄a 檢測益間之位置關係圖。圖！ 3為具備本發明之離子.— 置之# s杳& &台^ 束邓疋裝置的離子束照射裝置之再另一實施形態概略正視圖。圖14為本發明之離子束測定奘 .^ 丁不列疋裒置的再另一實施形態概略圖。圖15為本發明之離子束測定裝置的再另一實施形態概【主要元件符號說明】 2 離子源 3 電漿 4 電漿產生部 6 多孔電極 8 、 8a〜8g 離子導出孔 10 、 1Oa〜1Og 離子束 12 屏蔽板 14 開口 16 屏蔽板驅動裝置 18 檢測器 20 移動平面 22 支撐體 24 Λ 檢測器驅動裝置 25 檢測器單元驅動裝置 312XP/發明說明書(補件)/96-07/96111782 29 1329892 26 基板 28 支撐架 30 基板驅動裝置 32 檢測器單元 34 虛線 40a~40f 離子束測定裝置• Spatial distribution. Further, based on the measurement results, the two-dimensional ion beam 10 divergence angle Θ and the deviation angle α can be obtained. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic front view showing an embodiment of an ion beam irradiation apparatus including an ion beam measuring apparatus according to the present invention. Fig. 2 is a schematic plan view showing an example of an ion beam cross section and a substrate in Fig. 1; Fig. 3 is an enlarged cross-sectional view showing an example of the vicinity of the opening of the shield plate. 4 is a view showing the positional relationship of a porous electrode, a shield plate, and a detector. Figure 5 is a schematic diagram of an ion beam incident on a detector. Fig. 6 is a schematic view showing an example of the spatial distribution of an ion beam. Fig. 7 is a schematic diagram showing the spatial distribution of the ion beam; (Α) is the original spatial distribution '(Β) is a spatial distribution after the opening of the shield plate. Fig. 8 is an explanatory diagram of a divergence angle of an ion beam. Fig. 9 is an explanatory diagram of the deviation angle of the ion beam. Fig. 1 is a schematic view showing another embodiment of the ion beam measuring apparatus of the present invention. (Supplement) /%·〇7/96 丨丨丨782 28 1329892 The round Π is the other side of the present invention. The ion beam irradiation of the east measuring device is shown in FIG. An open fish Ρϊ 曰曰丄检测 a detection of the positional relationship between the benefits. Figure! 3 is a schematic front view showing still another embodiment of the ion beam irradiation apparatus including the # s 杳 && Fig. 14 is a schematic view showing still another embodiment of the ion beam measurement of the present invention. Fig. 15 is a still further embodiment of the ion beam measuring apparatus of the present invention. [Main element symbol description] 2 Ion source 3 Plasma 4 Plasma generating portion 6 Porous electrode 8, 8a to 8g Ion-derived hole 10, 1Oa to 1Og Ion beam 12 Shield 14 Opening 16 Shield drive 18 Detector 20 Moving plane 22 Support 24 Λ Detector drive 25 Detector unit drive 312XP / invention manual (supplement) / 96-07/96111782 29 1329892 26 Substrate 28 Support frame 30 Substrate drive device 32 Detector unit 34 Dotted line 40a~40f Ion beam measuring device

312XP/發明說明書(補件)/96-07/96111782 30312XP/Invention Manual (supplement)/96-07/96111782 30

Claims

1329892 十、申請專利範圍： 1. -種離子束測定裝置，將在—點處相互呈正交的三二二”^轴及〜之^該離子束敎襄置係測疋仗具有夕孔電極的離子源沿z軸方向導出的離子束 .空間分佈的裝置，而該多孔電極係沿xy平面的電極，且至少在沿X軸方向上，依實質等間隔具有相互實質相小的複數離子導出孔；其特徵在於具備有：屏蔽板’其沿π平面而位於上述離子源之下游侧，並具有使上述離子束其中一部分通過的開口；檢測器，其位於上述屏蔽板之下游侧，檢測通過上述屏蔽板開口的離子束之離子束電流；以及檢測器驅動裝置，其具有使上述檢測器橫跨上述屏蔽板開口的下游部，並沿x軸方向移動的機能；且，若將上述多孔電極與檢測器間沿z軸方向的距離設為L，將上述屏蔽板與檢測器間沿z軸方向的距離設為^ 鲁將上述多孔電極的各離子導出孔沿χ軸方向的尺寸設為 a，將該離子導出孔沿X軸方向的間隔設為p,將上述屏蔽板開口沿X軸方向的尺寸設為b，將上述檢測器沿X軸方向的尺寸設為w，便滿足下式之關係、或滿足與該式在數學上等效之關係： {w(L-d)+bL}/d< (p-a)。 2·—種離子束測定裝置’將在一點處相互呈正交的三個軸設定為X軸、y軸及Z軸之下，該離子束測定裝置係測疋從具有多孔電極的離子源沿Z軸方向導出的離子束之 312XP/發明說明書(補件)/96-07/961Π 782 31 1329892 工間刀佈的裝置，而該多孔電極係沿χγ平面的電極，且至少在沿X軸方向上，依實質等間隔具有相互實質相同大小的複數離子導出孔；其特徵在於具備有：屏蔽板，其沿xy平面而位於上述離子源之下游侧，具有使上述離子束其中一部分通過的開口；以及檢測器單元，其位於上述屏蔽板之下游側，具有複數檢測器，該複數檢測器檢測通過上述屏蔽板開口的離子束之離子束電流，並沿X軸方向排列，且相互實質相同大小；且，若將上述多孔電極與檢測器間沿z軸方向的距離設為L，將上述屏蔽板與各檢測器間沿2轴方向的距離設2 d，將上述多孔電極的各離子導出孔沿χ軸方向的尺寸嗖為a，將該離子導出孔沿χ轴方向的間隔設為ρ，將上^ 屏蔽板開口沿X軸方向的尺寸設為b，將上述各檢測器沿寸設為W，便滿足下式之關係、或滿足與該式在數學上等效之關係： {w(L-d)+bL}/d< (p-a)。 3·—種離子束測定裝置，將在一點處相互呈正軸設定為X軸、y軸及z軸之下個 —~日士 β Γ忑離子束測定裝置係測疋從具有多孔電極的離子源沿鲇班軸向導出的離子束之的裝置，而該多孔電極係沿xy平面的電極，且小的㈣雜；道：隔具有相互實質相同大的複數離子導出孔；其特徵在於具備有·· ::板，其沿xy平面而位於上述作為使上述離子束苴中一邱八、s& 砑側八有 U ^刀通過的開口，而至少沿又轴 3i2xp/mm^9mm/96-〇7/96i 11 m 32 方白相互貫貝相同大小的複數開口；檢測為，其位於上述屏蔽板下游側，檢測通過上述屏蔽板開口的離子束之離子束電、流；以及門驅動裝置’其具有使域檢測11橫跨上述屏蔽板汗、下游部，並沿X軸方向移動的機能； /將上述夕孔電極與檢測器間沿z軸方向的距離設二豸屏蔽板與檢測器間沿Z軸方向的距離設為d，字上述夕孔電極的各離子導出孔沿X軸方向的尺寸 a’將該離子導纽沿x|i方向❹m 屏 =口沿X轴方向的尺寸設為b,將上述各檢= ^向的尺寸設為W，便収T式之_、或滿足與該式在數學上等效之關係； {w(L-d)+bL}/d< (p-a) 步’上述距離d小於通過上述屏蔽板複數開口的離子束而同時入射於上述檢測器中的距離。二：Γ:束測定裝置，將在一點處相互呈正交的三個定：且ny軸及z軸之下’該離子束測定裝置係測疋攸具有多孔電極的離子源沿z軸方向導出的離子空間分佈的裝置’而該多孔電極係沿xy平面的電極，且軸方向上，依實質等間隔具有相互實質相同大小的稷數離子導出孔；其特徵在於具備有：八屏蔽板，其力Xy平面而位於上述離子源下游側，具作為使上述離子束其中一部分通過的開口，而至少沿: 方向相互實質相同大小的複數開口； 312XP/發明說明書(補泮)/96-07/961】1782 33 1329892 複數檢測器’其位於上述屏蔽板下游側，分別檢測通過上述屏蔽板的各開口之離子束的離子束電流，且至^x 軸方向相互實質相同大小，並依與上述屏蔽板開口實質相同的間隔而沿乂轴方向排列；以及貫質相板==裝置，其使上述複數檢測器，橫跨上述屏蔽 !應的開口之下游部’並沿X轴方向整合而移動的機月b ，二若：上述多孔電極與各檢測器間沿Z軸方向的距離 :，字上述屏蔽板與各檢測器間沿z軸方向的距離机為d，將上述多孔電極的各離子導出孔沿^方向的= 設為a，將該離子導出孔沿χ軸方向的間隔設為p，將上 ==二:軸方向的尺寸設Μ，將上述各檢測器二的尺寸設為w，便滿足下式之關係、或滿足愈該式在數學上等效之關係；一 {w(L-d)+bL}/d<(p-a) 離步’上述距離d小於通過上述屏蔽板複數開口的離子束而同時入射於一個檢測器中的距離。上種離子束測定裝置，將在-點處相互呈正交的三個，疋為X軸、y軸及z軸之下，該離子束測定裝孔電極的離子源沿z軸方向導出的離子束：佈的裝置’而該多孔電極係沿xy平面的電極，且小的複數離子導出孔；其特徵在於^有有相互實質相同大屏蔽板’其沿xy平面而位於上述離子源下游側，具有 312XP/發明說明書(補件)/96〇7/961 U782 ^ 1329892 作為使上述離子束其♦一部分通過的開口，而至少沿x軸方向相互實質相同大小的複數開口；以及稷數檢測器單元’其分別位於上述屏蔽板的各開口下游部’分別檢測通過上述屏蔽板的各開口中之離子束的離束電流；而士上述各檢測器單元分別具有檢測通過上述屏蔽板開口的離子束之離子束電流，並沿X軸方向排列且相互實質相同大小的複數檢測器；且’若將上述多孔電極與各制㈣沿z財向的 ^卜將上述屏蔽板與各檢測器間沿2軸方向的距離設為d,將上述多孔電極的各離子導出孔沿以方向的設為a，將該離子導出孔沿X轴方向的間隔設為P，將上述屏蔽板開口沿X轴方向的尺寸設為b，將寸設為w，便滿足下式之關係、二 {w(L-d)+bL}/d< (p-a) 離上述距離"小於通過上述屏蔽板複數開口的離子束而同時入射於構成上述各檢測器單元的檢測J 之任一者的距離。 °中 6· —種離子束測定裝置，將在一軸設定為X軸、y轴及2轴之下，呈正交的三個定從具有多孔電極的離子二：=彳定裝置係測空間分佈的裝置，而該多孔電極L 〇導出的離子束之至少在沿X軸方向上，依實質等門隔°且X:平面的電極，且頁買專間隔具有相互實質相同大 312ΧΡ/發明說明書(補件)/96·07/96111782 35 小：複數離子導出孔；其特徵在於具備有: 作為：U沿xy平面而位於上述離子源下游側，具有方㈣=束其中一部分通過的開口，而至少沿X轴向相互貫質相同大小的複數開口; 測、甬:i l·單广’其位於上述屏蔽板下游側’係具有屬於檢器W屏蔽板開口的離子束之離子束電流之檢測 1 /σ x軸方向排列的複數相互實質相同大小之計測器，以及 =測Θ單、％驅動裝置’其具有使上述檢測器單元沿X抽口移動’並使上述檢測器單元依序位於上述屏蔽板之複數開口下游部的機能； % 若將上述夕孔電極與各檢測器間沿Ζ軸方向的距離 :又為L ’將上述屏蔽板與各檢測器間沿ζ轴方向的距離設 =d，將上述多孔電極的各離子導出孔沿χ軸方向的尺寸設為：，將該離子導出孔沿χ軸方向的間隔設為ρ，將上鲁=屏蔽板開口沿χ軸方向的尺寸設為b，將上述各檢測器〜X軸方向的尺寸設為w，便滿足下式之關係、或滿足與該式在數學上等效之關係； {w(L-d)+bL}/d< (p-a) 更進一步，上述距離d小於通過上述屏蔽板複數開口的離子束而同時入射於構成上述各檢測器單元的檢測器中之任一者的距離。 7· —種離子束測定方法，其特徵在於使用申請專利範圍第1至6項中任一項之離子束測定裝置，測定從上述離子 312XP/® 明說明書(補件)/96-07/96111782 36 1329892 ，導出的離子束在沿x轴方向上的空間分佈，將依照該測疋所獲传的空間分佈利用尚斯分佈趨近，而求得該高斯分佈的標準差σ，使用該標準差σ、上述尺寸a、上述距離 • L及距離d，根據下式或與其在數學上等效的式子，求取，上述離子束在沿X軸方向上的發散角度0: 〇 =tan'1(a/d-a/2L) ° 8· —種離子束測定方法，其特徵在於使用申請專利範圍第1至6項中任一項之離子束測定裝置，測定從上述離子 •源導出的離子束在沿乂軸方向上的空間分佈，將依照該定所獲得的空間分佈利用高斯分佈趨近，而求得該高斯分佈的尖峰值X座標xo,使用該x座標χ。、在測定上述空間分佈時所使用的屏蔽板開口中心χ座# xs、及上述距離 d，根據下式或與其在數學上等效的式子，求取上述離子束在沿X軸方向上的偏差角度α : a Man ^Kxo-XsVd}。 9. 一種離子束照射裝置，其特徵在於具備有：離子源，若將在-點處相互呈正交的三個轴設定為χ 軸、y軸及…則該離子源具備有作為沿xy平面的電 =而至少在沿x軸方向上依實質等間隔具有相互實質相複數離子導出孔之多孔電極，並將形成沿χ轴方向=尺寸大於沿y轴方向尺寸之_㈣的 z軸方向導出；丁不朝/口子束照射基板驅動裝置，其具有在從該離子源導出的離區域内，使基板沿y轴方向移動的機能；以及 312XP/發明說明書(補件)/96-〇7/96!丨丨加 37 1329892 離子束測定裝置，其乃申請專利範圍第1至6項中任一項所述者。1329892 X. The scope of application for patents: 1. An ion beam measuring device, which has an orthogonal three-two-two axis at the point-to-point, and the ion beam is measured by the ion beam system. The ion source is derived from the z-axis direction of the ion beam. The spatially distributed device, and the porous electrode is an electrode along the xy plane, and at least in the direction along the X-axis, has substantially opposite phase ions at substantially equal intervals. The hole is characterized in that: a shielding plate is disposed on a downstream side of the ion source along a π plane, and has an opening for passing a part of the ion beam; and a detector located on a downstream side of the shielding plate, and the detection is passed a beam current of an ion beam of the opening of the shielding plate; and a detector driving device having a function of moving the detector across a downstream portion of the opening of the shielding plate and moving in the x-axis direction; and, if the porous electrode is The distance between the detector and the detector in the z-axis direction is set to L, and the distance between the shield plate and the detector in the z-axis direction is set to φ. The dimension in the axial direction is a, the interval of the ion-extracting hole in the X-axis direction is p, the dimension of the opening of the shield plate in the X-axis direction is b, and the dimension of the detector in the X-axis direction is set to w, it satisfies the relationship of the following formula, or satisfies the mathematically equivalent relationship with the formula: {w(Ld)+bL}/d<(pa). 2·—the ion beam measuring device' will be at one point The three axes orthogonal to each other are set to be below the X-axis, the y-axis, and the Z-axis, and the ion beam measuring device is a 312XP/invention specification for measuring an ion beam derived from an ion source having a porous electrode along the Z-axis direction ( Supplement) / 96-07/961 Π 782 31 1329892 The device of the inter-machine knives, and the porous electrode is an electrode along the χ γ plane, and at least in the X-axis direction, has substantially the same size of each other at substantially equal intervals An ion-extracting hole; characterized by comprising: a shielding plate on an downstream side of the ion source along an xy plane, having an opening through which a part of the ion beam passes; and a detector unit located on a downstream side of the shielding plate With a complex detector, the complex The detector detects the ion beam current of the ion beam passing through the opening of the shielding plate, and is arranged in the X-axis direction and substantially the same size as each other; and, if the distance between the porous electrode and the detector in the z-axis direction is L, The distance between the shield plate and each detector in the two-axis direction is set to 2 d, and the size 嗖 of each ion-extracting hole of the porous electrode in the x-axis direction is a, and the ion-extracting hole is arranged along the z-axis direction. For ρ, the size of the upper shield opening in the X-axis direction is set to b, and each of the above detectors is set to W along the inch, thereby satisfying the relationship of the following formula or satisfying a mathematically equivalent relationship with the formula: {w(Ld)+bL}/d<(pa). 3·—Ion beam measuring device, which sets the positive axis at one point to the X axis, the y axis and the z axis below —~ 日士β Γ The helium ion beam measuring device is a device for measuring an ion beam derived from an ion source having a porous electrode along an axial direction, and the porous electrode is an electrode along an xy plane, and is small (four) heterogeneous; a substantially large number of ion-extracting holes; characterized by having ·· :: plate, which is located along the xy plane as the above-mentioned ion beam 一邱、 s s s s 八有有有有 , , , , , , , , , , , , , , , , , , , , , 至少至少至少至少至少至少至少至少至少至少至少至少至少至少〇7/96i 11 m 32 square white and the same size of multiple openings; detected as being located on the downstream side of the shielding plate, detecting the ion beam current and flow of the ion beam passing through the opening of the shielding plate; and the door driving device The utility model has the function of causing the domain detection 11 to traverse the sweat and the downstream portion of the shielding plate and moving in the X-axis direction; / setting the distance between the illuminating electrode and the detector in the z-axis direction to be between the shielding plate and the detector The distance along the Z-axis direction is set to d, and the size a' of each ion-extracting hole of the above-mentioned sigmoid electrode along the X-axis direction is set to the size of the ion guide in the x|i direction ❹m screen = the edge along the X-axis direction. b, if the size of each of the above-mentioned inspections = ^ is set to W, the T-form is obtained, or a mathematically equivalent relationship with the formula is satisfied; {w(Ld)+bL}/d< (pa) 'The above distance d is smaller than the distance that is simultaneously incident on the detector by the ion beam of the plurality of openings of the shield plateTwo: Γ: beam measuring device, which will be orthogonal to each other at one point: and under the ny axis and the z-axis. The ion beam measuring device is used to measure the ion source with porous electrodes and is derived along the z-axis direction. a device for spatially distributing ions, and the porous electrode is an electrode along the xy plane, and has a plurality of ion-extracting holes of substantially the same size in substantially the same interval in the axial direction; and is characterized by: an eight-shield plate; a force Xy plane located on the downstream side of the ion source, having an opening that passes a part of the ion beam, and at least substantially the same size of the opening in the direction: 312XP/Invention Manual (Supplement)/96-07/961 1782 33 1329892 The complex detector 'is located on the downstream side of the shielding plate, respectively detecting the ion beam current of the ion beam passing through each opening of the shielding plate, and is substantially the same size to each other in the ^x axis direction, and is compliant with the shielding plate The openings are arranged at substantially the same spacing along the x-axis direction; and the permeate phase plate == device, which causes the complex detector to traverse the above-mentioned shield The section 'and the movement of the machine month b in the direction of the X-axis, the second: the distance between the porous electrode and each detector in the Z-axis direction: the distance between the shield plate and the detectors in the z-axis direction For d, the = in the direction of the ion-extracting holes of the porous electrode is set to a, the interval between the ion-extracting holes in the z-axis direction is p, and the size in the upper==two:-axis direction is set to Μ, The size of each of the detectors 2 described above is set to w, and the relationship of the following formula is satisfied, or the mathematically equivalent relationship of the formula is satisfied; a {w(Ld)+bL}/d<(pa) is off-step The distance d is smaller than the distance that is simultaneously incident on one detector by the ion beam of the plurality of openings of the above-mentioned shield plate. In the above-mentioned ion beam measuring device, three electrodes are orthogonal to each other at the - point, and the x-axis is below the X-axis, the y-axis, and the z-axis. The ion beam is used to measure the ion source of the ion-implanted electrode along the z-axis direction. a bundle: a device of the cloth' and the porous electrode is an electrode along the xy plane, and a small plurality of ion-extracting holes; characterized in that there is a substantially large shield plate that is substantially identical to each other on the downstream side of the ion source along the xy plane, 312XP / invention specification (supplement) / 96 〇 7 / 961 U782 ^ 1329892 as an opening through which a part of the above-mentioned ion beam passes, and at least substantially the same size of the opening in the x-axis direction; and a number of detector units 'the respective downstream portions of the openings of the shielding plates respectively detect the off-beam currents of the ion beams passing through the openings of the shielding plates; and each of the detector units has an ion beam for detecting the opening through the shielding plate a beam detector current, and a plurality of detectors arranged in the X-axis direction and substantially the same size as each other; and 'if the above-mentioned porous electrode and each system (4) are along the z-axis, the above screen The distance between the plate and each of the detectors in the two-axis direction is d, the ion-extracting holes of the porous electrode are set to a in the direction, and the interval between the ion-extracting holes in the X-axis direction is P. The size of the opening of the shielding plate along the X-axis direction is set to b, and the inch is set to w, so that the relationship of the following formula is satisfied, and two {w(Ld)+bL}/d<(pa) are separated from the above distance" The plate is connected to the ion beam of the plurality of openings while being incident on the distance of any of the detections J constituting each of the detector units. In the middle of the 6-type ion beam measuring device, the first axis is set to the X-axis, the y-axis and the 2-axis, and the three orthogonally defined ions are separated from the ion 2:=彳 determining device. And the ion beam derived from the porous electrode L 〇 is at least in the X-axis direction, according to the substantially equal gate and the X: plane electrode, and the page-purchasing interval is substantially the same as each other 312 ΧΡ / invention specification ( Supplement)/96·07/96111782 35 small: a plurality of ion-extracting holes; characterized in that: U is located on the downstream side of the ion source along the xy plane, and has a square (four) = an opening through which a part of the beam passes, and at least a plurality of openings of the same size along the X-axis; measuring, 甬: il·单广's located on the downstream side of the shielding plate' is a detection of the ion beam current of the ion beam belonging to the opening of the shielding plate of the detector W. a plurality of detectors of substantially the same size arranged in the σ-axis direction, and a test unit, a % drive device having a movement of the detector unit along the X port, and sequentially positioning the detector unit on the shield plate It The function of the downstream part of the opening; % If the distance between the above-mentioned illuminating electrode and each detector in the x-axis direction is: L ', the distance between the shielding plate and each detector along the x-axis direction is set to d, The size of each of the ion-extracting holes of the porous electrode in the z-axis direction is such that the distance between the ion-extracting holes in the z-axis direction is ρ, and the size of the upper plate = the opening of the shield plate in the x-axis direction is b, Setting the size of each of the detectors to the X-axis direction to w satisfies the relationship of the following formula or satisfies the mathematically equivalent relationship with the formula; {w(Ld)+bL}/d<(pa) Further, the distance d is smaller than a distance of any one of the detectors constituting each of the detector units simultaneously passing through the ion beam of the plurality of openings of the shield plate. A method for measuring an ion beam, which is characterized in that the ion beam measuring device according to any one of claims 1 to 6 is used for measuring the ion 312XP/® specification (supplement)/96-07/96111782 36 1329892, the spatial distribution of the derived ion beam in the direction along the x-axis, and the standard deviation σ of the Gaussian distribution is obtained by using the Shansian distribution approaching according to the spatial distribution obtained by the measurement, and the standard deviation is used. σ, the above-mentioned dimension a, the above-mentioned distance L, and the distance d are obtained according to the following formula or a mathematically equivalent expression thereof, and the divergence angle of the above-mentioned ion beam in the X-axis direction is 0: 〇=tan'1 (a/da/2L) ° 8 - an ion beam measuring method, characterized in that the ion beam derived from the ion source is measured using an ion beam measuring device according to any one of claims 1 to 6. The spatial distribution along the x-axis direction is approximated by the Gaussian distribution obtained according to the fixed spatial distribution, and the peak value X coordinate xo of the Gaussian distribution is obtained, and the x coordinate χ is used. In the measurement of the spatial distribution, the shielding plate opening center # seat # xs and the distance d are obtained according to the following formula or a mathematically equivalent expression thereof, and the ion beam is obtained in the X-axis direction. Deviation angle α : a Man ^Kxo-XsVd}. An ion beam irradiation apparatus comprising: an ion source, wherein if the three axes orthogonal to each other at a point are set as a χ axis, a y axis, and ..., the ion source is provided as an XY plane The electric current = at least in the x-axis direction at substantially equal intervals, the porous electrodes having substantially opposite phase ion-extracting holes, and are formed in the z-axis direction along the z-axis direction = size larger than the y (four) dimension along the y-axis direction ; Ding non-orientation / illuminating substrate driving device having the function of moving the substrate in the y-axis direction in the off-going area derived from the ion source; and 312XP/invention specification (supplement)/96-〇7/ 96: </ RTI> </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;

312XP/發明說明書(補件)/96-07/96111782 38312XP/Invention Manual (supplement)/96-07/96111782 38