TWI327603B - Sputtering equipment and sputtering method - Google Patents

Description

1327603 ^ · »1327603 ^ · »

- 三達編號：TW3326PA 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種用以濺鍍一薄膜於至少一基材 上之賤鍍裝置及減锻方法，且特別是有關於一種基材移 動式濺鍍裝置及濺鍍方法。 【先前技術】 近年以來，濺錄（sputtering)裝置多方應用於不同 _ 的產業中，包括IC(integrated circuit)產業或電子產 業等。濺鍍裝置係用以形成一薄膜於一加工物件之表 面，諸如絕緣層或傳導層。因此，在因應賤鑛裝置之大 - 量應用下，其裝置亦不斷地改良提升。 - 濺鍍裝置係利用至少一電源供應器供給電壓至基材 (待鍍物）及靶材（材質與欲濺鍍於待鍍物之材質相同）， 使得游離之氣體離子轟擊（bombard)乾材，而讓乾材之原 子或分子受衝擊而脫離，並且形成一薄膜於基材表面上。 請參照第1圖，其繪示傳統濺鍍裝置之示意圖。傳 統之錢鍍裝置1係利用前述之賤链製程，以固定機構120 將乾材121設置於基材111之上。並且透過乾材κι形 成一薄膜161於基材in上。其中，基材ηι藉由一移 動機構110帶動，以往輸送方向Dl移動。 粗材121之長邊與基材111之輸送方向D1係垂直設 置，以致讀統之乾材121賤鍍於基材111之薄膜161 的厚度較薄。因此，為了增加乾材121藏鍍於基材in j4/6〇3- 达三号: TW3326PA IX. Description of the Invention: [Technical Field] The present invention relates to a ruthenium plating apparatus and a wrought-prevention method for sputtering a film on at least one substrate, and in particular A substrate mobile sputtering device and a sputtering method. [Prior Art] In recent years, sputtering devices have been used in various industries, including IC (integrated circuit) industry or electronic industry. The sputtering apparatus is used to form a film on the surface of a workpiece, such as an insulating layer or a conductive layer. Therefore, in response to the large-scale application of the mining equipment, the equipment has been continuously improved and improved. - The sputtering device uses at least one power supply to supply voltage to the substrate (to be plated) and the target (the material is the same as the material to be sputtered on the object to be plated), so that the free gas ions are bombarded with dry materials. The atoms or molecules of the dry material are detached by impact and a film is formed on the surface of the substrate. Please refer to FIG. 1 , which illustrates a schematic diagram of a conventional sputtering apparatus. The conventional money plating apparatus 1 is provided with a dry material 121 on a substrate 111 by a fixing mechanism 120 by the above-described twist chain process. And a film 161 is formed on the substrate in through the dry material κι. Here, the substrate ηι is driven by a moving mechanism 110, and the conventional transport direction D1 is moved. The long side of the thick material 121 is disposed perpendicularly to the conveying direction D1 of the substrate 111, so that the thickness of the film 161 plated on the substrate 111 by the dry material 121 of the reading material is thin. Therefore, in order to increase the dry material 121, it is plated on the substrate in j4/6〇3

: TW3326PA ^薄膜161的厚度，職材121之數 松以供給電壓至㈣121之電源供應器然而， 材121數目而增加設置的數量，造 ，也會隨著靶 間配置複雜、初設及維修成本高之缺點。控制***與空 【發明内容】 有鑑於此’本發明係提供一種機 去，其利用改變靶材之長邊與基材之移動=置及磯鍍方 增加靶材濺鍍於基材之薄膜的厚度、減少向平行’ μ器之設置數目，以及降低系統控制鱼維修材及電源供 根據本發明之第一方面，提出—種c 移動機構及一固定機構。移動機構係:置，包括 ::送方向移動。固定機構係與移動機構耦:動 機構係用以固定至少一靶材於基材上方。其 ：： 長邊與輸送方向係實質上平行。 根據本發明之第二方面，提出—種職錢方法。此方 ^包括固定至少-乾材於基材之上方，且㈣之長邊與 土材之-輸送方向係實質上平行。及帶動基材往輸送方 向移動。 為讓本發明之上述之内容能更明顯易懂，下文特舉 較佳實施例，並配合所附圖式，作詳細說明如下： 【實施方式】 复一 f施例 I3?7603· . 三_號:期纖 / 請同時參照第2圖及第3圖，第2圖繪示本發明第 〆實施例之濺鍍裝置的示意圖，第3圖繪示本發明之濺 鑛方法的流裎圖。第一實施例之濺鍍裝置2，係用以濺鍍 /薄嫉261於至少一基材211上，且濺鍍裝置2包括一 移動機構210及一固定機構220。 在第3圖之步驟（a)中（如第2圖所示），固定機構 220係與移動機構210耦接，且固定機構220係固定至少 ，輕材221於基材211上方。在本實施例中，歡村221 φ 係為一圓柱靶，且其長邊與基材211之輸送方向D2係實 質上平行。靶材221於設置時，其長邊與輸送方向D2具 有一夹角。在本實施例中’較佳之夹角係在_1〇。~1〇°之 - 間。 . 在第3圖之步驟（b)中（如第2圖所示）。移動機構 210係用以帶動基材211往一輸送方向D2移動。本實施 例之移動機構210係為一傳送帶，且基材211係為板狀 結構。因此，移動機構210帶動置於其上之板狀的基材 籲 211，以往輸送方向D2移動。 由於靶材221之長邊與輸送方向])2係實質上平行， 因此可增加靶材221濺鍍於基材211之薄膜261的厚度， 並且減少對應於耙材221之電源供應器25〇之數量。 此外，本實施例之濺鍍裝置2更包括一擋板23〇， 擋板230设置於靶材221及基材2Π之間《擋板230係 用以減少薄臈261集中濺鍍於靶材221之正下方，以使 薄膜261分佈於基材2Π之厚度均勻。 < s 7 1327603: TW3326PA ^ The thickness of the film 161, the number of the job 121 is loose to supply the voltage to the power supply of the (four) 121. However, the number of the material 121 increases the number of the set, and the design will also be complicated with the configuration of the target, the initial installation and the maintenance cost. High disadvantages. Control System and Space [Invention] In view of the above, the present invention provides a machine that utilizes the change of the long side of the target and the movement of the substrate, and the addition of the target to increase the sputtering of the target on the substrate. The thickness, the number of sets to the parallel 'μ', and the system for controlling the fish repair material and the power supply are provided. According to the first aspect of the invention, a c moving mechanism and a fixing mechanism are proposed. The mobile mechanism is: set, including :: send direction to move. The securing mechanism is coupled to the moving mechanism: the actuating mechanism is configured to secure at least one target above the substrate. Its :: long side is substantially parallel to the conveying direction. According to a second aspect of the invention, a method of wages is proposed. This side includes fixing at least the dry material above the substrate, and the long side of (4) is substantially parallel to the transport direction of the soil material. And driving the substrate to move in the conveying direction. In order to make the above-mentioned contents of the present invention more comprehensible, the following detailed description of the preferred embodiments and the accompanying drawings will be described in detail as follows: [Embodiment] Example 1 I3?7603·. No.: Period fiber / Please refer to FIG. 2 and FIG. 3 simultaneously, FIG. 2 is a schematic view showing a sputtering apparatus according to a third embodiment of the present invention, and FIG. 3 is a flow chart showing a sputtering method of the present invention. The sputtering apparatus 2 of the first embodiment is used for sputtering/thinning 261 on at least one substrate 211, and the sputtering apparatus 2 includes a moving mechanism 210 and a fixing mechanism 220. In the step (a) of Fig. 3 (as shown in Fig. 2), the fixing mechanism 220 is coupled to the moving mechanism 210, and the fixing mechanism 220 is fixed at least, and the light member 221 is above the substrate 211. In the present embodiment, Huancun 221 φ is a cylindrical target, and its long side is substantially parallel to the conveying direction D2 of the substrate 211. When the target 221 is disposed, its long side has an angle with the conveying direction D2. In the present embodiment, the preferred angle is 〇. ~1〇° - between. In step (b) of Figure 3 (as shown in Figure 2). The moving mechanism 210 is configured to drive the substrate 211 to move in a transport direction D2. The moving mechanism 210 of this embodiment is a conveyor belt, and the base material 211 is a plate-like structure. Therefore, the moving mechanism 210 drives the plate-shaped base material 211 placed thereon to move in the conventional conveying direction D2. Since the long side of the target 221 is substantially parallel to the transport direction]) 2, the thickness of the film 261 on which the target 221 is sputtered on the substrate 211 can be increased, and the power supply 25 corresponding to the coffin 221 can be reduced. Quantity. In addition, the sputtering device 2 of the present embodiment further includes a baffle 230 disposed between the target 221 and the substrate 2 《 "The baffle 230 is used to reduce the thin 臈 261 concentrated sputtering on the target 221 Directly below, the thickness of the film 261 distributed on the substrate 2 is uniform. < s 7 1327603

' 三麵號：TW3326PA §青參照第4圖，其缯'示第2圖之擋板的中間區域及 側邊區域的示意圖。擔板230具有一中間區域a及二側 邊區域b。擋板230之中間區域a係對應於乾材22丨之正 下方，而兩個侧邊區域b則係位於中間區域a之兩侧。 中間區域a沿輸送方向D2的長度，大於兩個側邊區域匕 沿輸送方向D2的長度。 也就疋s兑，擋板230之中間區域8遮樓較多的乾材 221，侧邊區域b遮檔較少的靶材221。在濺鍍過程中， 如第2圖所示’由於靶材221與基材211之中央處的距 離較近，乾材221與基材211之邊緣處的距離較遠。距 離越近往往濺鐘的厚度越厚。因此，透過擋板230之中 間區域a適當遮檔多餘的滅鍍。而改善了薄膜261集中 • 於靶材221之正下方之情況，進而達到薄臈261分佈於 基材211之厚度均勻。 其中，擋板230之形狀可為三角形、半圓形或半橢 鲁 圓形。在本實施例中’擋板230之形狀係以三角形為例 作說明。本實施例中，三角形之擋板230係設置於靶材 221與基材211之間，且擋板230之設置方式如第4圖所 示。三角形之擋板230其位於乾材221之正下方之中間 區域a沿輸送方向D2的長度大於兩個側邊區域b。因此， 如前述所提及，擋板230之中間區域a可遮檔集中於乾 材221正下方之薄膜261。且由於三角形之擋板230具有 漸進式之斜邊，因此可於濺鍍時，均勻分佈靶材221於 基材211上。 1327603 瓠· ·'Three-face number: TW3326PA § 青 Refer to Figure 4, and 缯' shows a schematic view of the middle and side areas of the baffle of Figure 2. The plate 230 has an intermediate portion a and two side regions b. The intermediate portion a of the baffle 230 corresponds to directly below the dry material 22, and the two side regions b are located on both sides of the intermediate portion a. The length of the intermediate portion a in the conveying direction D2 is greater than the length of the two side regions 沿 in the conveying direction D2. In other words, the middle portion 8 of the baffle 230 covers a large amount of dry material 221, and the side region b blocks a target 221 with less. In the sputtering process, as shown in Fig. 2, since the distance between the target 221 and the center of the substrate 211 is relatively short, the distance between the dry material 221 and the edge of the substrate 211 is far. The closer the distance is, the thicker the splash clock is. Therefore, the excess de-plating is appropriately blocked by the intermediate portion a of the baffle 230. Further, the film 261 is concentrated on the direct side of the target 221, so that the thickness of the thin film 261 distributed on the substrate 211 is uniform. Wherein, the shape of the baffle 230 may be a triangle, a semicircle or a semi-elliptical circle. In the present embodiment, the shape of the baffle 230 is exemplified by a triangle. In this embodiment, the triangular baffle 230 is disposed between the target 221 and the substrate 211, and the baffle 230 is disposed as shown in FIG. The triangular baffle 230 has a length in the intermediate direction a directly below the dry material 221 in the conveying direction D2 which is larger than the two side regions b. Therefore, as mentioned above, the intermediate portion a of the baffle 230 can occlude the film 261 concentrated directly below the dry material 221. Moreover, since the triangular baffle 230 has a progressive bevel, the target 221 can be evenly distributed on the substrate 211 during sputtering. 1327603 瓠· ·

三達編號：TW3326PA 综上所述，靶材221之長邊實質上平行於基材211 之輸送方向D2的設置方式，可增加乾材22丨藏鐘於基材 211之薄膜261的厚度’並減少對應靶材221之電源供應 器250的設置數量。 此外，濺鍍裝置2之擋板230更可減少薄膜261集 中分佈於靶材221之正下方的情況，使得薄膜261可均 勻分佈於基材211上。因此，整體而言，本實施例在維 持薄膜261分佈均勻情況下，可增加靶材221之濺鍍濺 _ 鍍於基材211之薄膜261的厚度，並減少生產成本及空 間配置複雜度等缺點。 以下將藉由一實驗以驗證本實施例之效用。請參照 • 第5圖，其繪示傳統之錢鍵裝置之實驗側視圖。傳統之 • 濺鍍裝置1之靶材121之長邊與基材111之輸送方向D1 垂直。此實驗中，直徑為7公分之一圓柱靶設置於基材 111之正上方6公分處’且基材111上放置8片載玻片 si〜s8 。 鲁 請參照第6圖，其繪示8個載玻片上之薄膜的反射 率與波長之關係圖。載玻片si及s8於波長150〇 nm所 對應之反射率約為51%。載玻片S2及s7之反射率約為 54%。載玻片s3〜s6之反射率約為56. 5%。 假設反射率最低之載玻片S1及S8之鍍率為丨κ/15 sec，其中Κ表示1單位厚度。利用薄膜161之反射率與 鍍率成正比關係可推算出載玻片s2及幻之鍍率為丨〇6 K/15 sec，且載玻片 s3~s6 之鑛率為 1. 11 κ/15 sec。 1327603Sanda number: TW3326PA In summary, the long side of the target 221 is substantially parallel to the arrangement direction of the substrate 211 in the transport direction D2, and the thickness of the film 261 of the dry material 22 in the substrate 211 can be increased. The number of settings of the power supply 250 corresponding to the target 221 is reduced. In addition, the baffle 230 of the sputtering apparatus 2 can reduce the distribution of the film 261 directly under the target 221, so that the film 261 can be uniformly distributed on the substrate 211. Therefore, in the overall embodiment, in the case of maintaining uniform distribution of the film 261, the thickness of the sputtering film 221 of the target 221, the thickness of the film 261 plated on the substrate 211, and the disadvantages of production cost and space configuration complexity are reduced. . The experiment of this embodiment will be verified by an experiment below. Please refer to • Figure 5, which shows an experimental side view of a conventional money key device. Conventionally, the long side of the target 121 of the sputtering apparatus 1 is perpendicular to the conveying direction D1 of the substrate 111. In this experiment, a cylindrical target having a diameter of 7 cm was placed 6 cm directly above the substrate 111' and 8 slides si~s8 were placed on the substrate 111. Lu Refer to Figure 6 for a plot of reflectance versus wavelength for a film on eight slides. The reflectance of the slides si and s8 at a wavelength of 150 〇 nm is about 51%. The reflectance of slides S2 and s7 is approximately 54%. 5%。 The reflectance of the slide s3 ~ s6 is about 56. 5%. It is assumed that the plating rates of the slides S1 and S8 having the lowest reflectance are 丨κ/15 sec, where Κ represents 1 unit thickness. Using a ratio of the reflectance of the film 161 to the plating rate, it can be inferred that the slide s2 and the plaque plated ratio are 丨〇6 K/15 sec, and the ore ratio of the slide s3~s6 is 1.11 κ/15 Sec. 1327603

三織號：TW3326PA 假若傳統之濺鍍裝置丨濺鍍載玻片sl〜s8的時間八 別為15秒’則藉由載玻片sps8之鍍率可推算出基材if 上之薄膜161之總厚度約為8. 58 κ。 11 同理，透過實驗可得出本實施例之濺鍍裝置2於 鍍後，所得之薄膜261之厚度約為53. 2 K。 、 綜合比較兩組數據，本實施例改變靶材221的擺置 方式，可增加薄膜261濺鍍於基材211之厚度。且= 統之濺鍍裝置1所得之薄膜161之厚度相較，本實施 所得之薄膜261之厚度為其6倍。換言之，假若欲得到 相同厚度之薄膜，則於傳統之濺鍍裝置丨中，需設置6 支靶材121。然而，應用本實施例之濺鍍裝置2則只需1 支靶材221。此外，電源供應器25〇的設置於本實施例中 也只需較少的數量。 因此，本實施例之施行不但可減少初設成本，如靶 材221及電源供應器250的設置，亦可進一步簡化濺鍍 裝置2之系統及空間配置。 又 第二實施例 請參照第7圖，其繪示本發明第二實施例之濺鍍裝 置的示意圖。第二實施例與第一實施例的不同之處在於 第一實施例設置一個擋板230,而第二實施例之濺鍍裝置 3設置多個檔板230。其中’多個擋板23〇設置於靶材321 與基材311之間。且擋板23〇係沿著基材311之輸送方 向D3排列。 1327603 • · «Three woven number: TW3326PA If the traditional sputtering device 丨 sputtered slides sl~s8 time eight is 15 seconds', then by the glass plate sps8 plating rate can be calculated on the substrate if the film 161 The thickness is about 8.58 κ. I. The thickness of the resulting film 261 is about 53.2 K after the plating. Comparing the two sets of data, the embodiment changes the manner in which the target 221 is placed, and the thickness of the film 261 sputtered on the substrate 211 can be increased. And the thickness of the film 161 obtained by the sputtering apparatus 1 is 6 times larger than the thickness of the film 261 obtained by the present embodiment. In other words, if a film of the same thickness is to be obtained, in the conventional sputtering apparatus, six targets 121 are required. However, with the sputtering apparatus 2 of the present embodiment, only one target 221 is required. Further, the arrangement of the power supply unit 25A also requires a small number in the present embodiment. Therefore, the implementation of the embodiment can not only reduce the initial cost, such as the setting of the target 221 and the power supply 250, but also further simplify the system and space configuration of the sputtering apparatus 2. SECOND EMBODIMENT Referring to Figure 7, there is shown a schematic view of a sputtering apparatus according to a second embodiment of the present invention. The second embodiment is different from the first embodiment in that the first embodiment is provided with a shutter 230, and the sputtering apparatus 3 of the second embodiment is provided with a plurality of shutters 230. The plurality of baffles 23 are disposed between the target 321 and the substrate 311. The baffles 23 are arranged along the transport direction D3 of the substrate 311. 1327603 • · «

' 三達編號：TW3326PA ' 本實施例中，基材311係為滾筒形式，如圖7中所 示意。移動機構310捲動滾筒形式之基材311，以移動基 材311往輸送方向D3移動。此外，本實施例中所使用之 靶材321係為長方形靶，其藉由固定機構320固定於基 材311之上方。 本實施例除了具有第一實施例之優點之外，當靶材 321之長邊的長度增加時，僅需適當地添加擋板230，仍 兼具維持薄膜361均勻分佈之特性。且電源供應器350 • 可維持相同數量。 綜上所述，雖然本發明已以較佳實施例揭露如上， • 然其並非用以限定本發明。本發明所屬技術領域中具有 . 通常知識者，在不脫離本發明之精神和範圍内，當可作 各種之更動與潤飾。因此，本發明之保護範圍當視後附 之申請專利範圍所界定者為準。 (S )'Sanda number: TW3326PA' In this embodiment, the substrate 311 is in the form of a drum, as illustrated in Fig. 7. The moving mechanism 310 rolls the substrate 311 in the form of a roller to move the substrate 311 in the conveying direction D3. Further, the target 321 used in the present embodiment is a rectangular target which is fixed above the substrate 311 by a fixing mechanism 320. In addition to the advantages of the first embodiment, in the present embodiment, when the length of the long side of the target member 321 is increased, it is only necessary to appropriately add the baffle 230, and the characteristics of maintaining the uniform distribution of the film 361 are maintained. And the power supply 350 • can maintain the same amount. In conclusion, the present invention has been disclosed above in the preferred embodiments, and is not intended to limit the invention. It is to be understood by those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. (S)

11 1327603 * * ·11 1327603 * * ·

' 三達編號：TW3326PA 【圖式簡單說明】 第1圖繪示傳統之濺鍍裝置之示意圖； 第2圖繪示本發明第一實施例之濺鍍裝置的示意 圖， 第3圖繪示本發明之濺鍍方法的流程圖； 第4圖繪示第2圖之擋板的中間區域及側邊區域的 不意圖， 第5圖繪示傳統之濺鍍裝置之實驗側視圖； • 第6圖繪示8個載玻片上之薄膜的反射率與波長之 關係圖；及 第7圖繪示本發明第二實施例之濺鍍裝置的示意 圖。 < S ) 12 1327603 • · .'Sanda number: TW3326PA' [Simple description of the drawings] Fig. 1 is a schematic view showing a conventional sputtering apparatus; Fig. 2 is a schematic view showing a sputtering apparatus according to a first embodiment of the present invention, and Fig. 3 is a view showing the present invention Flowchart of the sputtering method; FIG. 4 is a schematic view showing the intermediate portion and the side region of the baffle of FIG. 2, and FIG. 5 is a side view showing the experiment of the conventional sputtering device; A graph showing the reflectance versus wavelength of a film on eight slides; and FIG. 7 is a schematic view of a sputtering apparatus according to a second embodiment of the present invention. < S ) 12 1327603 • · .

' 三達編號：TW332ffA 【主要元件符號說明】 1、2、3 :濺鍍裝置 110、 210、310 :移動機構 111、 211、311 :基材 120、 220、320 :固定機構 121、 221、321 :靶材 150、250、350 :電源供應器 161、261、361 :薄膜 • 230 :擋板'Sanda number: TW332ffA [Description of main component symbols] 1, 2, 3: sputtering device 110, 210, 310: moving mechanism 111, 211, 311: substrate 120, 220, 320: fixing mechanism 121, 221, 321 : Target 150, 250, 350: Power supply 161, 261, 361: film • 230: baffle

Dl、D2、D3 :輸送方向 a :中間區域 b:側邊區域 . si、s2、s3、s4、s5、s6、s7、s8 :載玻片 13Dl, D2, D3: conveying direction a: intermediate area b: side area. si, s2, s3, s4, s5, s6, s7, s8: slide 13

Claims (1)

1327603 _ * I ' 三達編號：TW3326PA 十、申請專利範圍： 1. 一種濺鍍裝置，用以濺鍍一薄膜於至少一基材 上，該濺鍍裝置至少包括： 一移動機構，用以帶動該基材往一輸送方向移動； 及 一固定機構，係與該移動機構耦接，且該固定機構 用以固定至少一靶材於該基材上方； 其中，該靶材之長邊與該輸送方向實質上平行。 • 2.如申請專利範圍第1項所述之濺鍍裝置，其中該 靶材之長邊與該輸送方向之間具有一夾角，該夾角係為 -10。〜10。。 - 3.如申請專利範圍第1項所述之濺鍍裝置，其中該 . 乾材係一圓柱乾。 4. 如申請專利範圍第1項所述之濺鍍裝置，其中該 把材係一長方形乾。 5. 如申請專利範圍第1項所述之濺鍍裝置，更包括： ® 至少一擋板，係用以減少該薄膜集中濺鍍於該靶材 之正下方，以使該薄膜分佈於該基材之厚度均勻，其中 該擋板裝設於該靶材及該基材之間。 6. 如申請專利範圍第5項所述之濺鍍裝置，其中該 擋板具有一中間區域及二側邊區域，該中間區域係對應 於該靶材之正下方，該些側邊區域係位於該中間區域之 兩側*該中間區域沿該輸送方向之長度大於該些側邊區 域沿該輸送方向之長度。 1327603 .· I ' 三達編號：TW3326PA 7.如申請專利範圍第5項所述之濺鍍裝置，其中該 濺鍍裝置包括複數個擋板，該些擋板係沿著該輸送方向 排列。 8. 如申請專利範圍第5項所述之濺鍍裝置，其中該 擋板之形狀為三角形、半圓形或半橢圓形。 9. 一種藏鑛方法，用以藏鑛一薄膜於至少一基材 上，該濺鍍方法包括以下之步驟： (a) 固定至少一靶材於該基材之上方，且該靶材之 • 長邊與該基材之一輸送方向實質上平行；及 (b) 帶動該基材往該輸送方向移動。 10. 如申請專利範圍第9項所述之濺鍍方法，其中 - 在該步驟（a)中，該靶材之長邊與該輸送方向之間具有一 . 夾角，該炎角係為-10°〜10°。 11. 如申請專利範圍第9項所述之濺鍍方法，其中 該步驟（a)更包括： 裝設至少一擋板於該靶材及該基材之間； ® 其中，該擋板具有一中間區域及二側邊區域，該中 間區域係對應於該靶材之正下方，該些侧邊區域係位於 該中間區域之兩側，該中間區域沿該輸送方向之長度大 於該些側邊區域沿該輸送方向之長度，以使該薄膜之厚 度均勻。 12. 如申請專利範圍第11項所述之濺鍍方法，其中 該步驟（a)更包括： 裝設複數個擋板於該靶材及該基材之間，該些擋板 15 1327603 -* · 三達編號：TW3326PA 係沿著該輸送方向排列。1327603 _ * I ' Sanda number: TW3326PA X. Patent application scope: 1. A sputtering device for sputtering a film on at least one substrate, the sputtering device comprising at least: a moving mechanism for driving The substrate is moved in a conveying direction; and a fixing mechanism is coupled to the moving mechanism, and the fixing mechanism is configured to fix at least one target above the substrate; wherein the long side of the target and the conveying The directions are substantially parallel. 2. The sputtering apparatus of claim 1, wherein the long side of the target has an angle with the conveying direction, and the angle is -10. ~10. . 3. The sputtering apparatus of claim 1, wherein the dry material is a cylindrical dry. 4. The sputtering apparatus of claim 1, wherein the material is a rectangular shape. 5. The sputtering device of claim 1, further comprising: ® at least one baffle for reducing concentrated sputtering of the film directly under the target to distribute the film to the substrate The thickness of the material is uniform, wherein the baffle is disposed between the target and the substrate. 6. The sputtering apparatus of claim 5, wherein the baffle has an intermediate region and two side regions corresponding to the target directly below the target, the lateral regions being located The two sides of the intermediate portion * the length of the intermediate portion in the conveying direction is greater than the length of the side regions in the conveying direction. The sputtering device of claim 5, wherein the sputtering device comprises a plurality of baffles arranged along the conveying direction. 8. The sputtering apparatus of claim 5, wherein the baffle is triangular, semi-circular or semi-elliptical in shape. 9. A method of depositing a method for depositing a film on at least one substrate, the sputtering method comprising the steps of: (a) fixing at least one target above the substrate, and wherein the target is The long side is substantially parallel to the transport direction of one of the substrates; and (b) the substrate is moved in the transport direction. 10. The sputtering method according to claim 9, wherein - in the step (a), the long side of the target has an angle with the conveying direction, and the angle is -10 °~10°. 11. The sputtering method of claim 9, wherein the step (a) further comprises: installing at least one baffle between the target and the substrate; wherein the baffle has a An intermediate region and a two-sided region corresponding to a directly below the target, the lateral regions being located on opposite sides of the intermediate region, the intermediate region having a length in the conveying direction greater than the lateral regions The length along the conveying direction is such that the thickness of the film is uniform. 12. The sputtering method of claim 11, wherein the step (a) further comprises: installing a plurality of baffles between the target and the substrate, the baffles 15 1327603 -* · Sanda number: TW3326PA is arranged along this conveying direction.